A secondary integrated structure of a four-way valve drive power circuit

Abstract

The present application provides a secondary integrated structure of a four-way valve drive power circuit, which belongs to the technical field of valve drive circuits and is used to solve the problem that the valve drive circuit in the related technology is large in size and not conducive to integration. It includes: a housing and an integrated circuit arranged in the housing; the integrated circuit includes a substrate and discrete devices, and the discrete devices specifically include four operational comparator bare chips, eight triode bare chips, eight diode bare chips, four diode bare chips, four field effect transistor bare chips, four fixed resistors, eight fixed resistors, and eight capacitors; there are two substrates, and the two substrates are placed side by side, and the discrete devices are evenly distributed on the two substrates for assembly. By adopting the above technical solution, the obtained secondary integrated structure of the four-way valve drive power circuit has a smaller size, which is conducive to the application of the integrated structure.

Description

Technical Field

[0001] The present application relates to the technical field of valve drive circuits, and in particular to a secondary integrated structure of a four-way valve drive power circuit. Background Art

[0002] The valve drive circuit is the drive circuit of the electromagnetic valve. When the drive circuit is used to drive multiple electromagnetic valves, the conventional choice is to integrate the multiple drive circuits to form an overall drive circuit that can control multiple electromagnetic valves. However, this direct secondary integration method results in a larger size of the final overall drive circuit. Summary of the invention

[0003] The present application provides a secondary integrated structure of a four-way valve driving power circuit, which has a smaller size.

[0004] The secondary integrated structure of a four-way valve driving power circuit provided in this application specifically adopts the following technical solutions:

[0005] A secondary integrated structure of a four-way valve driving power circuit comprises: a housing and an integrated circuit arranged in the housing;

[0006] The integrated circuit includes a substrate and discrete devices, wherein the discrete devices specifically include four operational comparator bare chips, eight triode bare chips, eight diode bare chips, four diode bare chips, four field effect transistor bare chips, four fixed resistors, eight fixed resistors, and eight capacitors;

[0007] There are two substrates, which are placed side by side, and the discrete devices are evenly distributed on the two substrates for assembly.

[0008] By adopting the above technical solution, the obtained secondary integrated structure of the four-way valve driving power circuit has a smaller size, which is conducive to the application of the integrated structure.

[0009] Furthermore, the integrated circuit adopts Figure 1 The assembly is performed at the assembly position described.

[0010] Furthermore, the dimensions of the substrate are 29 mm×(24±0.2) mm×(1.0±0.1) mm.

[0011] Furthermore, the substrate is a beryllium oxide thick film ceramic substrate.

[0012] Furthermore, the operational comparator model is LM139, the transistor model is 3DG182E, the diode model of the eight pieces is JHRC4148, the diode model of the four pieces is BZX55C12V, the field effect tube model is IXTD24P20, the fixed resistors of the four pieces are gold-terminated chip thick-film fixed resistors, the fixed resistors of the eight pieces are tin-lead-terminated chip thick-film fixed resistors, and the capacitors are palladium-silver-terminated multilayer ceramic capacitors.

[0013] Furthermore, the conductors printed on the surface of the substrate are gold and silver, the gold paste used is model 5771, the silver paste used on the back is model 9512, and the silver paste used on the front is model 6160.

[0014] Furthermore, the integrated circuit also includes a printed encapsulation glaze, a printed medium and a printed film resistor, wherein the printed encapsulation glaze is arranged in a non-welding area on the surface of the substrate and the printed conductor, and the printed medium is arranged between the upper and lower layers of conductors that need to be isolated.

[0015] Furthermore, the slurry model used for the printed encapsulation glaze is 7137, the slurry model used for the printed medium is QM44, and the slurry model used for the printed film resistor is 17 series.

[0016] Furthermore, the model of the housing is MDFM6333-P35, and the integrated circuit is electrically connected to the outside of the housing through the leads of the housing.

[0017] Furthermore, the water vapor content in the shell is less than 5000 ppm.

[0018] In summary, this application at least has the following beneficial effects:

[0019] The obtained secondary integrated structure of the four-way valve driving power circuit has a smaller size, which is conducive to the application of the integrated structure.

[0020] It should be understood that the contents described in the Summary of the Invention are not intended to limit the key or important features of the embodiments of the present application, nor are they intended to limit the scope of the present application. Other features of the present application will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The above and other features, advantages and aspects of the embodiments of the present application will become more apparent with reference to the following detailed description in conjunction with the accompanying drawings. In the accompanying drawings, the same or similar reference numerals represent the same or similar elements, wherein:

[0022] Figure 1 An assembly diagram of an integrated circuit of a secondary integrated structure of a four-way valve drive power circuit is shown;

[0023] Figure 2A structural diagram showing a housing of a secondary integrated structure of a four-way valve drive power circuit;

[0024] Figure 3 A partial assembly diagram of an integrated circuit of a secondary integrated structure of a four-way valve drive power circuit is shown;

[0025] Explanation of the reference numerals: 1. Bottom layer gold conductor; 2. Dielectric; 3. Upper layer gold conductor; 4. Silver conductor; 5. Printed resistor; 6. Encapsulation glaze; 7. Assembly and bonding of bare chip; 8. Assembly of multilayer ceramic capacitor with palladium silver terminal; 9. Assembly and bonding of chip-type thick film fixed resistor with gold terminal; 10. Bonding of leads; 11. Spot welding of tinned copper strip. DETAILED DESCRIPTION

[0026] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0027] In addition, the term "and / or" in this article is only a description of the association relationship between the associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0028] The related technology provides a driving circuit for an electromagnetic valve, which includes discrete devices such as an operational comparator LM139, a transistor 3DG182E, a diode 1N4148 or BZX55C12V, a field effect transistor IXTD24P20, a chip-type thick-film fixed resistor with a tin-lead terminal, a multilayer ceramic capacitor with a tin-lead terminal, and a connector. The aforementioned discrete devices are soldered to a PCB substrate using a reflow soldering process to realize a driving circuit for an electromagnetic valve with a single-channel constant voltage mode / constant current mode, which can control an electromagnetic valve.

[0029] After the driving circuit of the single-channel constant pressure mode / constant current mode electromagnetic valve is packaged in the housing, the overall size exceeds 64mm×34mm×10mm. The operating environment temperature range of the driving circuit of the single-channel constant pressure mode / constant current mode electromagnetic valve is -40℃~105℃.

[0030] The above-mentioned related technologies have at least the following defects:

[0031] The size of the driving circuit of a single-channel constant pressure mode / constant current mode electromagnetic valve is relatively large, which is not conducive to reducing the size of the secondary integrated structure when applied to a multi-channel secondary integrated structure;

[0032] In order to overcome the above-mentioned defects, an embodiment of the present application discloses a secondary integrated structure of a four-way valve driving power circuit, which has a smaller size.

[0033] A secondary integrated structure of a four-way valve driving power circuit comprises a shell and an integrated circuit arranged in the shell.

[0034] The integrated circuit includes a substrate and discrete devices. The discrete devices specifically include four LM139 operational comparator bare chips, eight 3DG182E transistor bare chips, eight JHRC4148 diode bare chips, four BZX55C12V diode bare chips, four IXTD24P20 field effect transistor bare chips, four gold-terminated chip thick-film fixed resistors, eight tin-lead terminal chip thick-film fixed resistors, and eight palladium-silver terminal multilayer ceramic capacitors.

[0035] Among them, there are two substrates, which are placed side by side. Both substrates are beryllium oxide thick film ceramic substrates. The specifications of each substrate are 29 mm×(24±0.2) mm×(1.0±0.1) mm. The conductors printed on the surface of the substrate are gold and silver. The gold paste model used is 5771, the silver paste model used on the back is 9512, and the silver paste model used on the front is 6160.

[0036] Integrated circuits also have printed encapsulation glaze, printed media and printed film resistors. The printed encapsulation glaze is used in the non-welding area on the substrate and printed conductor surface, and the paste model is 7137. When there are two layers of conductors on the substrate and they need to be isolated, a printed medium can be configured between the two layers of conductors. The specific paste model that can be used for the printed medium is QM44. The paste model used for printed film resistors is 17 series.

[0037] Figure 1 The assembly diagram of the integrated circuit of the secondary integrated structure of the four-way valve driving power circuit is shown, and the discrete devices are assembled in the assembly method shown in the figure.

[0038] The shell is an assembled shell, the specific model is MDFM6333-P35, the specific size is (62.9±0.2) mm×(33±0.2) mm×(6.8±0.2) mm, the shell material is 4J29 Kovar alloy, the coating is nickel-plated. The cover material is 4J42, the coating is nickel-plated. The lead material is 4J29 Kovar alloy, the coating is gold, and it can resist salt spray for 48 hours.

[0039] Figure 2A structural diagram of a housing of a secondary integrated structure of a four-way valve drive power circuit is shown.

[0040] The integrated circuit is arranged in the shell and can be electrically connected to the outside of the shell through the leads of the shell. After the shell is assembled, a closed protection for the integrated circuit can be formed.

[0041] The water vapor content inside the shell of the secondary integrated structure of the four-way valve drive power circuit is required to be less than 5000ppm. The operating temperature range of the secondary integrated structure of the four-way valve drive power circuit can be achieved from -55℃ to 125℃, with higher availability. The overall volume is small and can be directly welded to the external application circuit. The secondary integrated structure of the four-way valve drive power circuit is based on a hybrid integrated circuit and is controlled according to the H level. After assembly, it is screened according to the GJB2438A-2002 screening test, and has high reliability.

[0042] Figure 3 A partial assembly diagram of an integrated circuit of a secondary integrated structure of a four-way valve drive power circuit is shown, which shows the assembly positions of discrete components.

[0043] Reference Figure 3 The printing order of the substrate is bottom layer gold conductor printing, through hole printing, dielectric printing, upper layer gold conductor printing, back layer silver conductor printing, front layer silver conductor printing, resistor printing, and encapsulation glaze printing.

[0044] The back of the substrate is soldered to the tube shell by soldering; the bare chip is bonded to the conductor of the substrate by conductive glue H20S, and the electrical connection with the conductor is achieved by 1.0mil gold wire ball welding thermosonic bonding; the gold-terminated chip thick film fixed resistor and palladium silver-terminated multilayer ceramic capacitor are bonded to the non-conductor of the substrate by H70S, and the electrical connection with the conductor is achieved by 1.5mil gold wire ball welding thermosonic bonding; the conductor and the pin are electrically connected by 1.5mil gold wire ball welding thermosonic bonding and tinned copper strip spot welding. The main assembly process of the product is: shell base cleaning → printing → reflow soldering → substrate cleaning → substrate welding → non-conductive glue bonding → conductive glue bonding → bonding visual inspection → gold wire bonding → non-destructive tension → internal visual inspection. After the product is assembled and packaged, it is screened according to the screening tests and conditions specified in GJB2438A-2002 "General Specifications for Hybrid Integrated Circuits" to ensure that the product quality level is H-level products of GJB2438A-2002.

[0045] The above description is only a preferred embodiment of the present application and an explanation of the technical principles used. Those skilled in the art should understand that the scope of disclosure involved in the present application is not limited to the technical solution formed by a specific combination of the above technical features, but should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the aforementioned disclosed concept. For example, the above features are replaced with the technical features with similar functions disclosed in this application (but not limited to) by each other to form a technical solution.

Claims

1. A secondary integrated structure of a four-way valve drive power circuit, characterized in that: include: A housing and an integrated circuit disposed in the housing; The integrated circuit includes a substrate and discrete devices, wherein the discrete devices specifically include four operational comparator bare chips, eight triode bare chips, eight first diode bare chips, four second diode bare chips, four field effect transistor bare chips, four first fixed resistors, eight second fixed resistors, and eight capacitors; There are two substrates, which are placed side by side, and the discrete devices are evenly distributed on the two substrates for assembly; Both substrates are beryllium oxide thick film ceramic substrates. The dimensions of each substrate are 29mm×(24±0.2)mm×(1.0±0.1)mm. The conductors printed on the surface of the substrate are gold and silver. The gold paste model used is 5771, the silver paste model used on the back is 9512, and the silver paste model used on the front is 6160.

2. The secondary integrated structure of a four-way valve driving power circuit according to claim 1, characterized in that: The operational comparator model is LM139, the transistor model is 3DG182E, the diode model of the eight pieces is JHRC4148, the diode model of the four pieces is BZX55C12V, the field effect tube model is IXTD24P20, the fixed resistors of the four pieces are gold-terminated chip thick-film fixed resistors, the fixed resistors of the eight pieces are tin-lead-terminated chip thick-film fixed resistors, and the capacitors are palladium-silver-terminated multilayer ceramic capacitors.

3. The secondary integrated structure of a four-way valve driving power circuit according to claim 1, characterized in that: The integrated circuit also includes a printed encapsulation glaze, a printed medium and a printed film resistor. The printed encapsulation glaze is arranged in the non-welding area on the surface of the substrate and the printed conductor, and the printed medium is arranged between the upper and lower conductor layers that need to be isolated.

4. The secondary integrated structure of a four-way valve driving power circuit according to claim 3, characterized in that: The slurry model used for the printed encapsulation glaze is 7137, the slurry model used for the printed medium is QM44, and the slurry model used for the printed film resistor is 17 series.

5. The secondary integrated structure of a four-way valve driving power circuit according to claim 2, characterized in that: The model of the housing is MDFM6333-P35, and the integrated circuit is electrically connected to the outside of the housing through the leads of the housing.

6. The secondary integrated structure of a four-way valve driving power circuit according to claim 5, characterized in that: The water vapor content in the housing is less than 5000 ppm.

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