A single-chip wafer cleaning device and a method for controlling overall cleanliness thereof

Abstract

The present invention relates to a method for controlling the overall cleanliness in a single-chip wafer cleaning process, and the process of a gas jet pipeline providing a rotating jet of pure gas to the wafer platform includes: providing the rotating jet of pure gas to the wafer platform in a manner of pressurization, decompression, and pressurization cycle; or / and providing the rotating jet of pure gas to the wafer platform in a manner of approaching, moving away, and approaching cycle; or / and providing the rotating jet of pure gas to the wafer platform in a manner of hot air, cold air, and hot air cycle. The method for controlling the overall cleanliness in the single-chip wafer cleaning process of the present invention can select to perform an overall cleaning of the surface of the wafer and the wafer platform in at least one of pressurization, decompression, and pressurization cycle, approaching, moving away, and approaching cycle, or hot air, cold air, and hot air cycle, thereby controlling the overall cleanliness in the single-chip wafer cleaning process; the supercritical liquid carbon dioxide fluid can further dissolve the residual organic matter.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a single-chip wafer cleaning device and a method for controlling the overall cleanliness thereof. Background Art

[0002] At present, single-wafer cleaning is a common wafer cleaning method, which uses chemical solution and deionized water as cleaning materials. However, it is difficult to control the cleanliness of the wafer during the single-wafer cleaning process, and the residual chemical solution will etch the wafer, thereby reducing the yield rate. Summary of the invention

[0003] The object of the present invention is to provide a single-chip wafer cleaning device and a method for controlling the overall cleanliness thereof in view of the deficiencies in the prior art.

[0004] To achieve the above object, the technical solution adopted by the present invention is:

[0005] A first aspect of the present invention is to provide a method for controlling the overall cleanliness in a single-wafer cleaning process, comprising: in the cleaning process of the wafer, providing a rotating jet of pure gas to the wafer platform through a gas jet pipeline, and providing a negative pressure to the wafer platform through a gas exhaust pipeline to extract the gas;

[0006] The process of the gas jet pipeline providing the rotating jet pure gas to the wafer platform includes:

[0007] Providing a rotating jet of pure gas to the wafer platform in a pressurized, depressurized, and pressurized cycle; or / and

[0008] Providing a rotating jet of pure gas to the wafer platform in a cycle of approaching, moving away, and approaching; or / and

[0009] The wafer platform is provided with pure gas in a rotating jet in the form of hot air, cold air and hot air circulation.

[0010] Preferably, it also includes: after the gas jet pipeline provides the rotating jet pure gas to the wafer platform, a pure fluid is provided to the wafer platform through a fluid jet pipeline, and after the pure fluid is converted into a gaseous state through a fluid vaporization component, it is extracted through the gas exhaust pipeline.

[0011] Preferably, the pure gas is carbon dioxide gas.

[0012] Preferably, the pure fluid is supercritical liquid carbon dioxide fluid.

[0013] A second aspect of the present invention is to provide a single-wafer cleaning device based on the control method as described above, comprising:

[0014] Wafer platform;

[0015] A gas jet pipeline, used for providing a rotating jet of pure gas to the wafer platform;

[0016] A pressure regulating assembly for controlling the pressure of the pure gas during the rotating jet flow;

[0017] A platform lifting assembly, used to control the distance between the pure gas rotating jet and the wafer platform;

[0018] A temperature regulating component, used to control the temperature of the pure gas during the rotating jet flow;

[0019] The gas exhaust pipeline is used to provide negative pressure of exhaust gas to the wafer platform.

[0020] Preferably, it also includes:

[0021] A fluid jetting pipeline, used for providing pure fluid to the wafer platform;

[0022] The fluid vaporization component is used to convert the pure fluid into gaseous state.

[0023] Preferably, it also includes:

[0024] The filter assembly is used to filter solid impurities in the gas extracted from the gas exhaust pipeline.

[0025] Preferably, it also includes:

[0026] The recovery component is used to recover the gas extracted by the gas exhaust pipeline.

[0027] Preferably, it also includes:

[0028] The recovery temperature control component is used to control the temperature of the gas in the recovery component.

[0029] The present invention adopts the above technical solution, and has the following technical effects compared with the prior art:

[0030] The method for controlling the overall cleanliness in the single-wafer cleaning process of the present invention can select at least one of pressurization, decompression, pressurization cycle, approach, distance, approach cycle or hot air, cold air, hot air cycle to clean the surface of the wafer and the wafer platform as a whole, thereby controlling the overall cleanliness in the single-wafer cleaning process; the supercritical liquid carbon dioxide fluid can further dissolve the residual organic matter, and while vaporizing, it can also dry the surface of the wafer and the wafer platform; the used carbon dioxide can be recycled and reused. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1It is a schematic flow chart of a method for controlling overall cleanliness in a single-wafer cleaning process in the present invention;

[0032] Figure 2 It is a structural schematic diagram of a single-wafer cleaning device in the present invention;

[0033] The reference numerals include:

[0034] Wafer platform 1; gas jet pipeline 2; pressure regulating component 3; platform lifting component 4; temperature regulating component 5; gas exhaust pipeline 6; fluid jet pipeline 7; fluid vaporization component 8; filtering component 9; recovery component 10; recovery temperature control component 11. DETAILED DESCRIPTION

[0035] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0036] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments may be combined with each other.

[0037] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but they are not intended to limit the present invention.

[0038] Example 1

[0039] like Figure 1 As shown, this embodiment provides a method for controlling the overall cleanliness in a single-wafer cleaning process, comprising: in the cleaning process of the wafer, providing a rotating jet of pure carbon dioxide gas to the wafer platform through a gas jet pipeline, and providing a pure supercritical carbon dioxide fluid to the wafer platform through a fluid jet pipeline, and then converting the pure supercritical carbon dioxide fluid into a gaseous state through a fluid vaporization component, and providing negative pressure extraction to the wafer platform through a gas exhaust pipeline; wherein,

[0040] The process of the gas jet pipeline providing a rotating jet of pure carbon dioxide gas to the wafer platform includes:

[0041] Providing a rotating jet of pure carbon dioxide gas to the wafer platform in a pressurized, depressurized, and pressurized cycle; or / and

[0042] Providing a rotating jet of pure carbon dioxide gas to the wafer platform in a close, away, close cycle; or / and

[0043] The wafer platform is provided with a rotating jet of pure carbon dioxide gas in a hot air, cold air, and hot air circulation mode.

[0044] Example 2

[0045] like Figure 2 As shown, this embodiment provides a single-wafer cleaning device based on the control method described in Embodiment 1, comprising:

[0046] Wafer platform 1;

[0047] A platform lifting assembly 4, disposed at the bottom of the wafer platform 1, for controlling the distance between the rotating jet of pure carbon dioxide gas and the wafer platform 1;

[0048] A gas jet pipeline 2, used for providing a rotating jet of pure carbon dioxide gas to the wafer platform 1;

[0049] A pressure regulating assembly 3, disposed at the outlet of the gas jet pipeline 2, for controlling the pressure of the pure carbon dioxide gas during the rotating jet;

[0050] A temperature regulating component 5, disposed at the outlet of the gas jet pipeline 2, for controlling the temperature of the pure carbon dioxide gas during the rotating jet;

[0051] A fluid jet pipeline 7, used for providing pure supercritical carbon dioxide fluid to the wafer platform 1;

[0052] A fluid vaporization component 8, used to convert the pure supercritical carbon dioxide fluid into a gaseous state;

[0053] A gas exhaust pipe 6, used for providing negative pressure of exhaust gas to the wafer platform 1;

[0054] The filter assembly 9 is disposed at the inlet of the gas exhaust pipe 6 and is used to filter solid impurities in the gas extracted from the gas exhaust pipe 6 .

[0055] The recovery component 10 is disposed at the outlet of the gas exhaust pipeline 6 and is used to recover the gas extracted from the gas exhaust pipeline 6 .

[0056] The recovery temperature control component 11 is used to control the temperature of the gas in the recovery component 10 .

[0057] In summary, the method for controlling the overall cleanliness in the single-wafer cleaning process of the present invention can select at least one of pressurization, decompression, pressurization cycle, approach, distance, approach cycle or hot air, cold air, hot air cycle to clean the surface of the wafer and the wafer platform as a whole, thereby controlling the overall cleanliness in the single-wafer cleaning process; the supercritical liquid carbon dioxide fluid can further dissolve the residual organic matter, and while vaporizing, it can also dry the surface of the wafer and the wafer platform; the carbon dioxide used can be recycled and reused.

[0058] The above description is only a preferred embodiment of the present invention, and does not limit the implementation mode and protection scope of the present invention. For those skilled in the art, it should be aware that all solutions obtained by equivalent substitutions and obvious changes made using the description and illustrations of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for controlling overall cleanliness in a single-wafer cleaning process, comprising: In the wafer cleaning process, a rotating jet of pure gas is provided to the wafer platform through a gas jet pipeline, and a negative pressure is provided to the wafer platform through a gas exhaust pipeline to extract the gas; it is characterized in that: The process of the gas jet pipeline providing the rotating jet pure gas to the wafer platform includes: Providing a rotating jet of pure gas to the wafer platform in a pressurizing, depressurizing, and pressurizing cycle; and Providing a rotating jet of pure gas to the wafer platform in a cycle of approaching, moving away, and approaching; and The wafer platform is provided with pure gas in a rotating jet in the form of hot air, cold air and hot air circulation.

2. The control method according to claim 1, characterized in that: Also includes: After the gas jet pipeline provides rotating jet pure gas to the wafer platform, pure fluid is provided to the wafer platform through the fluid jet pipeline, and after the pure fluid is converted into gaseous state through the fluid vaporization component, it is extracted through the gas exhaust pipeline.

3. The control method according to claim 2, characterized in that: The pure gas is carbon dioxide gas.

4. The control method according to claim 3, characterized in that: The pure fluid is supercritical liquid carbon dioxide fluid.

5. A single-wafer cleaning device based on the control method according to any one of claims 1 to 4, characterized in that: include: Wafer platform; A gas jet pipeline, used for providing a rotating jet of pure gas to the wafer platform; A pressure regulating assembly for controlling the pressure of the pure gas during the rotating jet flow; A platform lifting assembly, used to control the distance between the pure gas rotating jet and the wafer platform; A temperature regulating component, used to control the temperature of the pure gas during the rotating jet flow; The gas exhaust pipeline is used to provide negative pressure of exhaust gas to the wafer platform.

6. The single-wafer cleaning device according to claim 5, characterized in that: Also includes: A fluid jetting pipeline, used for providing pure fluid to the wafer platform; The fluid vaporization component is used to convert the pure fluid into gaseous state.

7. The single-wafer cleaning device according to claim 5, characterized in that: Also includes: The filter assembly is used to filter solid impurities in the gas extracted from the gas exhaust pipeline.

8. The single-wafer cleaning device according to claim 5, characterized in that: Also includes: The recovery component is used to recover the gas extracted by the gas exhaust pipeline.

9. The single-wafer cleaning device according to claim 8, characterized in that: Also includes: The recovery temperature control component is used to control the temperature of the gas in the recovery component.

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