Single-stage boost inverter circuit, control method and power conversion device

Abstract

The present application relates to a single-stage boost inverter circuit, a control method and a power conversion device. The circuit comprises: an input inverter bridge module, an output inverter bridge module, a capacitive energy storage unit and an inductive energy storage backflow prevention unit. The capacitive energy storage unit is respectively connected to the input inverter bridge module, the input inverter bridge module, the positive output end of a DC power supply, the negative output end of the DC power supply and the ground; the inductive energy storage backflow prevention unit is connected in series between the input inverter bridge module and the output inverter bridge module; wherein, by respectively controlling the input inverter bridge module and the output inverter bridge module to work in coordination, the inductive energy storage backflow prevention unit outputs a preset boosted AC power to the next-stage load.

Description

Technical Field

[0001] The present invention relates to the technical field of power electronics, and in particular to a single-stage boost inverter circuit, a control method and a power conversion device. Background Art

[0002] In renewable energy power generation technology, DC power is generally generated first, and then the inverter is used to convert DC power into AC power for grid connection. In order to adapt to the wide output voltage range of power supply in renewable energy power generation, the inverter device usually needs to have the function of voltage boosting, while the traditional voltage type inverter only has the ability of voltage step-down inversion, and a two-stage or multi-stage power conversion device is required.

[0003] In addition, as the switching frequency of power semiconductor devices continues to increase, in non-isolated power supply applications, the device switching process will generate very large high-frequency common-mode voltage and leakage current. In order to reduce the induced electromotive force generated by the high-frequency switching of power devices, reduce the electromagnetic interference of power supply devices, and improve the efficiency of power conversion of power supply devices, while reducing the high-frequency leakage current formed by power supply devices during the power conversion process and reducing the safety risks of equipment and personnel, new energy power generation occasions generally use multi-level inverters to complete power conversion tasks.

[0004] However, if a three-level or multi-level inverter is used in a traditional two-level or multi-level power conversion device, the already complex system will become more difficult to implement, increase the number of power devices and passive devices, increase the cost of device design and the complexity of control, and reduce the reliability and stability of the system. Summary of the invention

[0005] Based on this, it is necessary to provide a single-stage boost inverter circuit, a control method and a power conversion device to address the problems in the above-mentioned background technology, so as to reduce the volume, cost and complexity of the circuit while performing boost inversion, and effectively reduce the harmonic components in the output electric energy.

[0006] A first aspect of the present application provides a single-stage boost inverter circuit, comprising:

[0007] Input inverter bridge module;

[0008] Output inverter bridge module;

[0009] A capacitive energy storage unit, wherein a first port of the capacitive energy storage unit is connected to a first port of the input inverter bridge module, a second port of the capacitive energy storage unit is connected to a second port of the input inverter bridge module, a third port of the capacitive energy storage unit is connected to a first port of the output inverter bridge module, a fourth port of the capacitive energy storage unit is connected to a second port of the output inverter bridge module, the first port of the capacitive energy storage unit is used to be connected to a positive output terminal of a DC power supply, and the fourth port of the capacitive energy storage unit is used to be connected to a negative output terminal of the DC power supply and to ground;

[0010] An inductive energy storage anti-backflow unit, wherein the first port of the inductive energy storage anti-backflow unit is connected to the third port of the input inverter bridge module, the second port of the inductive energy storage anti-backflow unit is connected to the fourth port of the input inverter bridge module, the third port of the inductive energy storage anti-backflow unit is connected to the third port of the output inverter bridge module, and the fourth port of the inductive energy storage anti-backflow unit is connected to the fourth port of the output inverter bridge module;

[0011] Among them, by controlling the input inverter bridge module and the output inverter bridge module to act in coordination respectively, the inductive energy storage backflow prevention unit outputs a preset boosted AC power to the next level load.

[0012] In the single-stage boost inverter circuit in the above embodiment, an inductive energy storage anti-backflow unit is connected in series between the input inverter bridge module and the output inverter bridge module, and a capacitive energy storage unit is provided to cooperate with the input inverter bridge module, the output inverter bridge module and the inductive energy storage anti-backflow unit to realize the inverter boosting of the input DC power to the preset boosted AC power and then output to the next level load. Due to the coordinated action of the input inverter bridge module and the output inverter bridge module, the harmonic content in the output voltage to the next level load is effectively reduced, and the waveform quality can be improved while reducing the volume of the input filter element and the output filter element. Since the single-stage boost inverter circuit provided in the present application can realize the power conversion in the new energy power generation occasion from the original two-stage power conversion in the first-stage conversion, it can effectively reduce the design cost of the power conversion device and improve the cost performance and integration of the power conversion device.

[0013] In one embodiment, the inductive energy storage backflow prevention unit includes:

[0014] A first backflow prevention module, wherein a first input port of the first backflow prevention module is connected to a third port of the input inverter bridge module, and a second input port of the first backflow prevention module is connected to a fourth port of the input inverter bridge module;

[0015] An inductive energy storage unit, wherein a first port of the inductive energy storage unit is connected to an output port of the first anti-backflow module;

[0016] A second anti-backflow module, wherein the input port of the second anti-backflow module is connected to the second port of the inductive energy storage unit, the first output port of the second anti-backflow module is connected to the third port of the output inverter bridge module, and the second output port of the second anti-backflow module is connected to the fourth port of the output inverter bridge module.

[0017] In the single-stage boost inverter circuit in the above embodiment, the inductive energy storage anti-backflow unit is provided to include a first anti-backflow module, an inductive energy storage unit and a second anti-backflow module, wherein the inductive energy storage unit is connected in series between the first anti-backflow module and the second anti-backflow module, so that the first anti-backflow module, the inductive energy storage unit and the second anti-backflow module cooperate with the input inverter bridge module and the output inverter bridge module to achieve the inversion and boosting of the input DC power to a preset boosted AC power and then output to the next load.

[0018] In one embodiment, the first anti-backflow module comprises:

[0019] a first diode, wherein an anode of the first diode is connected to the third port of the input inverter bridge module, and a cathode of the first diode is connected to the first port of the inductive energy storage unit;

[0020] A second diode, wherein an anode of the second diode is connected to the fourth port of the input inverter bridge module, and a cathode of the second diode is connected to the first port of the inductive energy storage unit.

[0021] In one embodiment, the second anti-backflow module includes:

[0022] a third diode, wherein an anode of the third diode is connected to the second port of the inductive energy storage unit, and a cathode of the third diode is connected to the third port of the output inverter bridge module;

[0023] A fourth diode, wherein an anode of the fourth diode is connected to the second port of the inductive energy storage unit, and a cathode of the fourth diode is connected to the fourth port of the output inverter bridge module.

[0024] In one embodiment, the capacitive energy storage unit comprises:

[0025] An input energy storage unit, wherein a first port of the input energy storage unit is connected to a first port of the input inverter bridge module, and a second port of the input energy storage unit is connected to a second port of the output inverter bridge module;

[0026] An output energy storage unit, wherein a first port of the output energy storage unit is connected to a first port of the output inverter bridge module, a second port of the output energy storage unit is connected to a second port of the input inverter bridge module, and a third port of the output energy storage unit is connected to a third port of the input energy storage unit.

[0027] In one embodiment, the input energy storage unit includes a first capacitor and a second capacitor connected in series, wherein the input port of the first capacitor is connected to the first port of the input inverter bridge module, the output port of the second capacitor is connected to the second port of the output inverter bridge module, and the output port of the first capacitor is connected to the third port of the output energy storage unit; and / or

[0028] The output energy storage unit includes a third capacitor and a fourth capacitor connected in series, wherein the input port of the third capacitor is connected to the first port of the output inverter bridge module, the output port of the third capacitor is connected to the output port of the first capacitor and the input port of the second capacitor, and the output port of the fourth capacitor is connected to the second port of the input inverter bridge module.

[0029] In one embodiment, the input inverter bridge module includes:

[0030] A first upper bridge arm switch unit, wherein a first port of the first upper bridge arm switch unit is connected to a first port of the capacitive energy storage unit;

[0031] A first lower bridge arm switch unit, wherein a first port of the first lower bridge arm switch unit is connected to a second port of the first upper bridge arm switch unit;

[0032] A second upper bridge arm switch unit, wherein a first port of the second upper bridge arm switch unit is connected to a first port of the capacitive energy storage unit;

[0033] a second lower bridge arm switch unit, wherein a first port of the second lower bridge arm switch unit is connected to a second port of the second upper bridge arm switch unit;

[0034] The second port of the first upper bridge arm switch unit is connected to the first port of the inductive energy storage backflow prevention unit, and the second port of the second upper bridge arm switch unit is connected to the second port of the inductive energy storage backflow prevention unit.

[0035] In one embodiment, the first upper bridge arm switch unit includes a first high-frequency switch tube, and the drain of the first high-frequency switch tube is connected to the first port of the capacitive energy storage unit;

[0036] The first lower bridge arm switch unit includes a second high-frequency switch tube, the drain of the second high-frequency switch tube is connected to the source of the first high-frequency switch tube, and the source of the second high-frequency switch tube is connected to the second port of the capacitive energy storage unit;

[0037] The second upper bridge arm switch unit includes a third high-frequency switch tube, and the drain of the third high-frequency switch tube is connected to the first port of the capacitive energy storage unit;

[0038] The second lower bridge arm switch unit includes a fourth high-frequency switch tube, the drain of the fourth high-frequency switch tube is connected to the source of the third high-frequency switch tube, and the source of the fourth high-frequency switch tube is connected to the second port of the capacitive energy storage unit;

[0039] The source of the first high-frequency switch tube is connected to the first port of the inductive energy storage anti-backflow unit, and the source of the third high-frequency switch tube is connected to the second port of the inductive energy storage anti-backflow unit.

[0040] In one embodiment, the output inverter bridge module includes:

[0041] a third upper bridge arm switch unit, wherein a first port of the third upper bridge arm switch unit is connected to a third port of the capacitive energy storage unit;

[0042] A third lower bridge arm switch unit, wherein a first port of the third lower bridge arm switch unit is connected to a second port of the third upper bridge arm switch unit, and a second port of the third lower bridge arm switch unit is connected to a fourth port of the capacitive energy storage unit;

[0043] a fourth upper bridge arm switch unit, wherein a first port of the fourth upper bridge arm switch unit is connected to a third port of the capacitive energy storage unit;

[0044] A fourth lower bridge arm switch unit, wherein a first port of the fourth lower bridge arm switch unit is connected to a second port of the fourth upper bridge arm switch unit, and a second port of the fourth lower bridge arm switch unit is connected to a fourth port of the capacitive energy storage unit;

[0045] The second port of the third upper bridge arm switch unit is connected to the third port of the inductive energy storage backflow prevention unit, and the second port of the fourth upper bridge arm switch unit is connected to the fourth port of the inductive energy storage backflow prevention unit.

[0046] In one embodiment, the third upper bridge arm switch unit includes a fifth high-frequency switch tube, and the drain of the fifth high-frequency switch tube is connected to the third port of the capacitive energy storage unit;

[0047] The third lower bridge arm switch unit includes a sixth high-frequency switch tube, the drain of the sixth high-frequency switch tube is connected to the source of the fifth high-frequency switch tube, and the source of the sixth high-frequency switch tube is connected to the fourth port of the capacitive energy storage unit;

[0048] The fourth upper bridge arm switch unit includes a seventh high-frequency switch tube, and the drain of the seventh high-frequency switch tube is connected to the third port of the capacitive energy storage unit;

[0049] The fourth lower bridge arm switch unit includes an eighth high-frequency switch tube, the drain of the eighth high-frequency switch tube is connected to the source of the seventh high-frequency switch tube, and the source of the eighth high-frequency switch tube is connected to the fourth port of the capacitive energy storage unit.

[0050] In one embodiment, it also includes:

[0051] a first electromagnetic isolation module, wherein a first port of the first electromagnetic isolation module is connected to a third port of the input inverter bridge module, and a second port of the first electromagnetic isolation module is connected to a third port of the output inverter bridge module; and / or

[0052] A second electromagnetic isolation module, wherein a first port of the second electromagnetic isolation module is connected to a fourth port of the input inverter bridge module, and a second port of the second electromagnetic isolation module is connected to a fourth port of the output inverter bridge module.

[0053] In one embodiment, the first electromagnetic isolation module includes a first high-frequency transformer, a first port of the first high-frequency transformer is connected to the third port of the input inverter bridge module, and a second port of the first high-frequency transformer is connected to the third port of the output inverter bridge module; and / or

[0054] The second electromagnetic isolation module includes a second high-frequency transformer, a first port of the second high-frequency transformer is connected to the fourth port of the input inverter bridge module, and a second port of the second high-frequency transformer is connected to the fourth port of the output inverter bridge module.

[0055] In one embodiment, the single-stage boost inverter circuit further includes a filter unit, a first port of the filter unit is connected to an output port of the first high-frequency transformer, and a second port of the filter unit is connected to an output port of the second high-frequency transformer.

[0056] A second aspect of the present application provides a power conversion device, comprising a single-stage boost inverter circuit as described in any one of the embodiments of the present application, for converting input direct current into a preset boosted alternating current.

[0057] A third aspect of the present application provides a single-stage boost inverter control method, comprising:

[0058] Generate an input inverter bridge control signal and an output inverter bridge control signal according to the first carrier input signal, the second carrier input signal and the first modulation wave input signal;

[0059] Based on the input inverter bridge control signal, the on / off of each switch unit in the input inverter bridge module is controlled, and based on the output inverter bridge control signal, the on / off of each switch unit in the output inverter bridge module is controlled, so that the inductive energy storage backflow prevention unit outputs a preset boosted AC power to the next level load; the first port of the inductive energy storage backflow prevention unit is connected to the third port of the input inverter bridge module, the second port of the inductive energy storage backflow prevention unit is connected to the fourth port of the input inverter bridge module, the third port of the inductive energy storage backflow prevention unit is connected to the third port of the output inverter bridge module, and the fourth port of the inductive energy storage backflow prevention unit is connected to the fourth port of the output inverter bridge module;

[0060] Among them, the first port of the input inverter bridge module is connected to the first port of the capacitive energy storage unit, the second port of the capacitive energy storage unit is connected to the second port of the input inverter bridge module, the third port of the capacitive energy storage unit is connected to the first port of the output inverter bridge module, the fourth port of the capacitive energy storage unit is connected to the second port of the output inverter bridge module, the first port of the input inverter bridge module is used to be connected to the positive output end of the DC power supply, and the fourth port of the capacitive energy storage unit is used to be connected to the negative output end of the DC power supply and the ground.

[0061] In the single-stage boost inversion method in the above embodiment, an input inverter bridge control signal and an output inverter bridge control signal are generated according to the first carrier input signal, the second carrier input signal and the first modulation wave input signal; the conduction and disconnection of each switch unit in the input inverter bridge module are controlled based on the input inverter bridge control signal, and the conduction and disconnection of each switch unit in the output inverter bridge module are controlled based on the output inverter bridge control signal, so that the inductive energy storage anti-backflow unit outputs a preset boosted AC to the next load. This embodiment effectively reduces the harmonic content in the output voltage to the next load, and can improve the waveform quality while reducing the volume of the input filter element and the output filter element. BRIEF DESCRIPTION OF THE DRAWINGS

[0062] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, drawings of other embodiments can be obtained based on these drawings without paying any creative work.

[0063] Figure 1This is a schematic diagram of the circuit principle of a single-stage boost inverter circuit provided in the first embodiment of the present application.

[0064] Figure 2 This is a circuit principle diagram of a single-stage boost inverter circuit provided in the second embodiment of the present application.

[0065] Figure 3 This is a circuit principle diagram of a single-stage boost inverter circuit provided in the third embodiment of the present application.

[0066] Figure 4 This is a circuit principle diagram of a single-stage boost inverter circuit provided in the fourth embodiment of the present application.

[0067] Figure 5 This is a circuit principle diagram of a single-stage boost inverter circuit provided in the fifth embodiment of the present application.

[0068] Figure 6 This is a circuit principle diagram of a single-stage boost inverter circuit provided in the sixth embodiment of the present application.

[0069] Figure 7 A circuit diagram of a single-stage boost inverter circuit provided in an embodiment of the present application.

[0070] Figure 8 A circuit diagram of a single-stage boost inverter circuit provided in another embodiment of the present application.

[0071] Fig. 9 A circuit diagram of a single-stage boost inverter circuit provided in yet another embodiment of the present application.

[0072] Fig.10a This is a modulation key waveform diagram of a single-stage boost inverter circuit provided in one embodiment of the present application.

[0073] Fig.10b This is a modulation key waveform diagram of a single-stage boost inverter circuit provided in another embodiment of the present application.

[0074] Fig.11a 1 is an equivalent circuit diagram of a single-stage boost inverter circuit provided in an embodiment of the present application in a first positive working mode.

[0075] Fig.11b 1 is an equivalent circuit diagram of a single-stage boost inverter circuit provided in an embodiment of the present application in a second positive working mode.

[0076] Fig.11c 1 is an equivalent circuit diagram of a single-stage boost inverter circuit provided in an embodiment of the present application in a third positive working mode.

[0077] Fig.11d 1 is an equivalent circuit diagram of a single-stage boost inverter circuit provided in an embodiment of the present application in a fourth positive working mode.

[0078] Fig.11e 1 is an equivalent circuit diagram of a single-stage boost inverter circuit provided in an embodiment of the present application in a fifth positive working mode.

[0079] Fig.11f 1 is an equivalent circuit diagram of a single-stage boost inverter circuit provided in an embodiment of the present application in a sixth positive working mode.

[0080] Figure 11g 1 is an equivalent circuit diagram of a single-stage boost inverter circuit provided in an embodiment of the present application in the seventh positive working mode.

[0081] Fig.12a 1 is an equivalent circuit diagram of a single-stage boost inverter circuit provided in an embodiment of the present application in a first negative working mode.

[0082] Figure 12b 1 is an equivalent circuit diagram of a single-stage boost inverter circuit provided in an embodiment of the present application in a second negative working mode.

[0083] Fig.12c 1 is an equivalent circuit diagram of a single-stage boost inverter circuit provided in an embodiment of the present application in a third negative working mode.

[0084] Fig.12d 1 is an equivalent circuit diagram of a single-stage boost inverter circuit provided in an embodiment of the present application in a fourth negative working mode.

[0085] Fig.12e 1 is an equivalent circuit diagram of a single-stage boost inverter circuit provided in an embodiment of the present application in a fifth negative working mode.

[0086] Fig.12f 1 is an equivalent circuit diagram of a single-stage boost inverter circuit provided in an embodiment of the present application in a sixth negative working mode.

[0087] Figure 12g 1 is an equivalent circuit diagram of a single-stage boost inverter circuit provided in an embodiment of the present application in the seventh negative working mode.

[0088] Fig.13 A schematic diagram of the structure of a single-stage boost inverter packaging module provided in one embodiment of the present application.

[0089] Fig.14a Schematic diagram of the structure of a III-N transistor provided in one embodiment of the present application.

[0090] Fig.14bFIG. 1 is a schematic diagram of the structure of a III-N transistor provided in another embodiment of the present application.

[0091] Fig.14c FIG. 1 is a schematic diagram of the structure of a III-N transistor provided in yet another embodiment of the present application.

[0092] Fig.15 A schematic diagram of a semiconductor structure of a III-N diode provided in one embodiment of the present application.

[0093] Fig.16a Schematic diagram of the structure of a III-N diode provided in one embodiment of the present application.

[0094] Fig.16b This is a schematic diagram of the structure of a III-N diode provided in another embodiment of the present application.

[0095] Fig.17a A schematic diagram of a packaging structure of a III-N diode provided in one embodiment of the present application.

[0096] Fig.17b A schematic diagram of a packaging structure of a III-N diode provided in another embodiment of the present application.

[0097] Fig.18a Schematic diagram of waveform curves of the current of a first boost inductor and a first carrier input signal of a single-stage boost inverter circuit provided in an embodiment of the present application.

[0098] Fig.18b Schematic diagram of waveform curves of the terminal voltage of the third capacitor, the terminal voltage of the fourth capacitor, and the voltage difference between the drain and the source of each switch tube of a single-stage boost inverter circuit provided in an embodiment of the present application.

[0099] Fig.18c Schematic diagram of waveform curves of the output voltage of an input DC power supply, the terminal voltage of a load, and the output side potential difference VNL of a single-stage boost inverter circuit provided in an embodiment of the present application. DETAILED DESCRIPTION

[0100] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are provided in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present application more thorough and comprehensive.

[0101] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0102] In the case of using “including”, “having”, and “comprising” described herein, another component may be added unless a clear limiting term such as “only”, “consisting of”, etc. is used. Unless mentioned otherwise, a term in the singular form may include a plural form and should not be understood as being one in number.

[0103] It should be understood that although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element without departing from the scope of the present application.

[0104] In this application, unless otherwise clearly specified and limited, the terms "connected", "connection" and the like should be understood in a broad sense, for example, it can be directly connected or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0105] Please refer to Figure 1In one embodiment of the present application, a single-stage boost inverter circuit 100 is provided, including an input inverter bridge module 10, an output inverter bridge module 20, a capacitive energy storage unit 30 and an inductive energy storage reverse flow prevention unit 40, wherein the first port of the capacitive energy storage unit 30 is connected to the first port of the input inverter bridge module 10, the second port of the capacitive energy storage unit 30 is connected to the second port of the input inverter bridge module 10, the third port of the capacitive energy storage unit 30 is connected to the first port of the output inverter bridge module 20, the fourth port of the capacitive energy storage unit 30 is connected to the second port of the output inverter bridge module 20, the first port of the capacitive energy storage unit 30 is used to be connected to the positive output terminal of the DC power supply 100, and the capacitive energy storage The fourth port of the energy unit 30 is used to be connected to the negative output terminal of the DC power supply 100 and the ground; the first port of the inductive energy storage anti-backflow unit 40 is connected to the third port of the input inverter bridge module 10, the second port of the inductive energy storage anti-backflow unit 40 is connected to the fourth port of the input inverter bridge module 10, the third port of the inductive energy storage anti-backflow unit 40 is connected to the third port of the output inverter bridge module 20, and the fourth port of the inductive energy storage anti-backflow unit 40 is connected to the fourth port of the output inverter bridge module 20; wherein, by respectively controlling the input inverter bridge module 10 and the output inverter bridge module 20 to act in coordination, the inductive energy storage anti-backflow unit 40 outputs a preset boosted AC power to the next-level load.

[0106] For details, please continue to refer to Figure 1 , by connecting the inductive energy storage anti-backflow unit 40 in series between the input inverter bridge module 10 and the output inverter bridge module 20, and setting the capacitive energy storage unit 30 to cooperate with the input inverter bridge module 10, the output inverter bridge module 20 and the inductive energy storage anti-backflow unit 40, the input DC power is inverted and boosted to the preset boosted AC power and then output to the next level load. Due to the coordinated action of the input inverter bridge module 10 and the output inverter bridge module 20, the harmonic content in the output voltage to the next level load is effectively reduced, and the waveform quality can be improved while reducing the volume of the input filter element and the output filter element. Since the single-stage boost inverter circuit provided in the present application can realize the power conversion in the new energy power generation occasion from the original two-stage power conversion in the first-stage conversion, it can effectively reduce the design cost of the power conversion device and improve the cost performance and integration of the power conversion device.

[0107] For further information, please refer to Figure 2In one embodiment of the present application, the inductive energy storage anti-backflow unit 40 includes a first anti-backflow module 41, an inductive energy storage unit 42 and a second anti-backflow module 43. The first input port of the first anti-backflow module 41 is connected to the third port of the input inverter bridge module 10, and the second input port of the first anti-backflow module 41 is connected to the fourth port of the input inverter bridge module 10; the first port of the inductive energy storage unit 42 is connected to the output port of the first anti-backflow module 41; the input port of the second anti-backflow module 43 is connected to the second port of the inductive energy storage unit 42, the first output port of the second anti-backflow module 43 is connected to the third port of the output inverter bridge module 20, and the second output port of the second anti-backflow module 43 is connected to the fourth port of the output inverter bridge module 20.

[0108] For details, please continue to refer to Figure 2 , by setting the inductive energy storage anti-backflow unit 40 to include a first anti-backflow module 41, an inductive energy storage unit 42 and a second anti-backflow module 43, wherein the inductive energy storage unit 42 is connected in series between the first anti-backflow module 41 and the second anti-backflow module 43, so that the first anti-backflow module 41, the inductive energy storage unit 42 and the second anti-backflow module 43 cooperate with the input inverter bridge module 10 and the output inverter bridge module 20 to achieve the inversion and boosting of the input DC power to the preset boosted AC power and then output to the next level load. In one embodiment of the present application, the inductive energy storage unit 42 can be the first boost inductor L1.

[0109] For further information, please refer to Figure 3 In one embodiment of the present application, the first backflow prevention module 41 includes a first diode D1 and a second diode D2, the anode of the first diode D1 is connected to the third port of the input inverter bridge module 10, and the cathode of the first diode D1 is connected to the first port of the inductive energy storage unit 42; the anode of the second diode D2 is connected to the fourth port of the input inverter bridge module 10, and the cathode of the second diode D2 is connected to the first port of the inductive energy storage unit 42.

[0110] For further information, please refer to Figure 3 In one embodiment of the present application, the second backflow prevention module 43 includes a third diode D3 and a fourth diode D4, the anode of the third diode D3 is connected to the second port of the inductive energy storage unit 42, and the cathode of the third diode D3 is connected to the third port of the output inverter bridge module 20; the anode of the fourth diode D4 is connected to the second port of the inductive energy storage unit 42, and the cathode of the fourth diode D4 is connected to the fourth port of the output inverter bridge module 20.

[0111] For further information, please refer to Figure 4In one embodiment of the present application, the capacitive energy storage unit includes an input energy storage unit 31 and an output energy storage unit 32, the first port of the input energy storage unit 31 is connected to the first port of the input inverter bridge module 10, and the second port of the input energy storage unit 31 is connected to the second port of the output inverter bridge module 20; the first port of the output energy storage unit 32 is connected to the first port of the output inverter bridge module 20, the second port of the output energy storage unit 32 is connected to the second port of the input inverter bridge module 10, and the third port of the output energy storage unit 32 is connected to the third port of the input energy storage unit 31.

[0112] For further information, please refer to Figure 5 In one embodiment of the present application, the input energy storage unit 31 includes a first capacitor Cin1 and a second capacitor Cin2 connected in series, wherein the input port of the first capacitor Cin1 is connected to the first port of the input inverter bridge module, the output port of the second capacitor Cin2 is connected to the second port of the output inverter bridge module, and the output port of the first capacitor Cin1 is connected to the third port of the output energy storage unit 31.

[0113] For further information, please refer to Figure 5 In one embodiment of the present application, the output energy storage unit includes a third capacitor Co1 and a fourth capacitor Co2 connected in series, wherein the input port of the third capacitor Co1 is connected to the first port of the output inverter bridge module, the output port of the third capacitor Co1 is connected to the output port of the first capacitor Cin1 and the input port of the second capacitor Cin2, and the output port of the fourth capacitor Co2 is connected to the second port of the input inverter bridge module 10.

[0114] For further information, please refer to Figure 6 In one embodiment of the present application, the input inverter bridge module 10 includes a first upper bridge arm switch unit 11, a first lower bridge arm switch unit 12, a second upper bridge arm switch unit 13 and a second lower bridge arm switch unit 14, the first port of the first upper bridge arm switch unit 11 is connected to the first port of the capacitive energy storage unit; the first port of the first lower bridge arm switch unit 12 is connected to the second port of the first upper bridge arm switch unit 11; the first port of the second upper bridge arm switch unit 13 is connected to the first port of the capacitive energy storage unit 30; the first port of the second lower bridge arm switch unit 14 is connected to the second port of the second upper bridge arm switch unit 13; wherein, the second port of the first upper bridge arm switch unit 11 is connected to the first port of the inductive energy storage backflow prevention unit 40, and the second port of the second upper bridge arm switch unit 13 is connected to the second port of the inductive energy storage backflow prevention unit 40.

[0115] For further information, please refer to Figure 6In one embodiment of the present application, the output inverter bridge module 20 includes a third upper bridge arm switch unit 21, a third lower bridge arm switch unit 22, a fourth upper bridge arm switch unit 23 and a fourth lower bridge arm switch unit 24, wherein the first port of the third upper bridge arm switch unit 21 is connected to the third port of the capacitive energy storage unit 30; the first port of the third lower bridge arm switch unit 22 is connected to the second port of the third upper bridge arm switch unit 21, and the second port of the third lower bridge arm switch unit 22 is connected to the fourth port of the capacitive energy storage unit 30; the first port of the fourth upper bridge arm switch unit 23 is connected to the third port of the capacitive energy storage unit 30; the first port of the fourth lower bridge arm switch unit 24 is connected to the second port of the fourth upper bridge arm switch unit 23, and the second port of the fourth lower bridge arm switch unit 24 is connected to the fourth port of the capacitive energy storage unit 30; wherein the second port of the third upper bridge arm switch unit 21 is connected to the third port of the inductive energy storage backflow prevention unit 40, and the second port of the fourth upper bridge arm switch unit 23 is connected to the fourth port of the inductive energy storage backflow prevention unit 40.

[0116] For further information, please refer to Figure 7 In one embodiment of the present application, the first upper bridge arm switch unit 11 includes a first high-frequency switch tube S1H, the drain of the first high-frequency switch tube S1H is connected to the first port of the capacitive energy storage unit 30; the first lower bridge arm switch unit 12 includes a second high-frequency switch tube S1L, the drain of the second high-frequency switch tube S1L is connected to the source of the first high-frequency switch tube S1H, and the source of the second high-frequency switch tube S1L is connected to the second port of the capacitive energy storage unit 30; the second upper bridge arm switch unit 13 includes a third high-frequency switch tube S2H, the third high-frequency The drain of the switch tube S2H is connected to the first port of the capacitive energy storage unit 30; the second lower bridge arm switch unit 14 includes a fourth high-frequency switch tube S2L, the drain of the fourth high-frequency switch tube S2L is connected to the source of the third high-frequency switch tube S2H, and the source of the fourth high-frequency switch tube S2L is connected to the second port of the capacitive energy storage unit 30; wherein, the source of the first high-frequency switch tube S1H is connected to the first port of the inductive energy storage backflow prevention unit 40, and the source of the third high-frequency switch tube S2H is connected to the second port of the inductive energy storage backflow prevention unit 40.

[0117] For further information, please refer to Figure 7In one embodiment of the present application, the third upper bridge arm switch unit 21 includes a fifth high-frequency switch tube S3H, the drain of the fifth high-frequency switch tube S3H is connected to the third port of the capacitive energy storage unit 30; the third lower bridge arm switch unit 22 includes a sixth high-frequency switch tube S3L, the drain of the sixth high-frequency switch tube S3L is connected to the source of the fifth high-frequency switch tube S3H, and the source of the sixth high-frequency switch tube S3L is connected to the fourth port of the capacitive energy storage unit 30; the fourth upper bridge arm switch unit 23 includes a seventh high-frequency switch tube S4H, the drain of the seventh high-frequency switch tube S4H is connected to the third port of the capacitive energy storage unit 30; the fourth lower bridge arm switch unit 24 includes an eighth high-frequency switch tube S4L, the drain of the eighth high-frequency switch tube S4L is connected to the source of the seventh high-frequency switch tube S4H, and the source of the eighth high-frequency switch tube S4L is connected to the fourth port of the capacitive energy storage unit 30.

[0118] For further information, please refer to Figure 8 In one embodiment of the present application, the single-stage boost inverter circuit also includes a first electromagnetic isolation module 51, a first port of the first electromagnetic isolation module 51 is connected to the third port of the input inverter bridge module 10, and a second port of the first electromagnetic isolation module 51 is connected to the third port of the output inverter bridge module 20.

[0119] For further information, please refer to Figure 8 In one embodiment of the present application, the single-stage boost inverter circuit also includes a second electromagnetic isolation module 52, the first port of the second electromagnetic isolation module 52 is connected to the fourth port of the input inverter bridge module 10, and the second port of the second electromagnetic isolation module 52 is connected to the fourth port of the output inverter bridge module 20.

[0120] For further information, please refer to Fig. 9 In one embodiment of the present application, the first electromagnetic isolation module includes a first high-frequency transformer T1, a first port of the first high-frequency transformer T1 is connected to a third port of the input inverter bridge module 10, and a second port of the first high-frequency transformer T1 is connected to a third port of the output inverter bridge module 20.

[0121] For further information, please refer to Fig. 9 In one embodiment of the present application, the second electromagnetic isolation module includes a second high-frequency transformer T2, a first port of the second high-frequency transformer T2 is connected to the fourth port of the input inverter bridge module 10, and a second port of the second high-frequency transformer T2 is connected to the fourth port of the output inverter bridge module 20.

[0122] For further information, please refer to Fig. 9In one embodiment of the present application, the inductive energy storage unit 42 can be a first boost inductor L1, a first port of the first boost inductor L1 is connected to the cathode of the first diode D1 and the cathode of the second diode D2, and a second port of the first boost inductor L1 is connected to the anode of the third diode D3 and the anode of the fourth diode D4.

[0123] For further information, please refer to Fig. 9 In one embodiment of the present application, the transmission ratio between the input side and the output side of the first high-frequency transformer T1 and the second high-frequency transformer T2 is 1, and only the functions of electrical isolation and voltage clamping are realized. At this time, the input-output voltage transmission ratio of the single-stage boost inverter circuit is (M / (1-D)), where D is the duty cycle of the first fixed pulse width signal Vpwm1 (or the second fixed pulse width signal Vpwm2), and M is the duty cycle of the first sinusoidal pulse width signal Vspwm1 (or the second sinusoidal pulse width signal Vspwm2). In other embodiments of the present application, the transmission ratio between the input side and the output side of the electromagnetic isolation module is N (N≥2), and the input-output voltage transmission ratio of the single-stage boost inverter circuit can be increased to (N*M / (1-D)).

[0124] For further information, please refer to Fig. 9 In one embodiment of the present application, the single-stage boost inverter circuit also includes a filter unit 60, the first port of the filter unit 60 is connected to the third port of the first high-frequency transformer T1, the second port of the filter unit 60 is connected to the third port of the second high-frequency transformer T2, and the filter unit 60 is used to filter the output voltage of the inductive energy storage backflow prevention unit.

[0125] Further, in one embodiment of the present application, the filter unit in the single-stage boost inverter circuit may be one of an L-type filter unit, an LC-type filter unit or an LCL-type filter unit.

[0126] For further information, please refer to Fig. 9 , Fig.10a and Fig.10bIn one embodiment of the present application, based on the first carrier input signal Vtri1, the second carrier input signal Vtri2 and the first modulation wave input signal Vsine, the first comparison module Comp1 (not shown), the second comparison module Comp2 (not shown), the third comparison module Comp3 (not shown) and the fourth comparison module Comp3 (not shown) can be used to generate an input inverter bridge control signal and an output inverter bridge control signal in sequence, wherein the input inverter bridge control signal includes a first switch tube drive signal VgsH1 for controlling the on and off of the first high-frequency switch tube S1H, a first switch tube drive signal VgsH2 for controlling the on and off of the second high-frequency switch tube S The first high-frequency switch tube S1L is turned on and off by a second switch tube driving signal VgsL1, a third switch tube driving signal VgsH2 for controlling the third high-frequency switch tube S2H to be turned on and off, a fourth switch tube driving signal VgsL2 for controlling the fourth high-frequency switch tube S2L to be turned on and off, a fifth switch tube driving signal VgsH3 for controlling the fifth high-frequency switch tube S3H to be turned on and off, a sixth switch tube driving signal VgsL3 for controlling the sixth high-frequency switch tube S3L to be turned on and off, a seventh switch tube driving signal VgsH4 for controlling the seventh high-frequency switch tube S4H to be turned on and off, and an eighth switch tube driving signal VgsL4 for controlling the eighth high-frequency switch tube S4L to be turned on and off. The first modulation wave input signal Vsine and the first carrier input signal Vtri1 are passed through the first comparison module Comp1 to generate the first switch tube drive signal VgsH1 and the second switch tube drive signal VgsL1; the inverted signal of the first modulation wave input signal Vsine and the first carrier input signal Vtri1 are passed through the second comparison module Comp2 to generate the third switch tube drive signal VgsH2 and the fourth switch tube drive signal VgsL2; the first modulation wave input signal Vsine and the second carrier input signal Vtri2 are passed through the third comparison module Comp3 to generate the fifth switch tube drive signal VgsH3 and the sixth switch tube drive signal VgsL3; the inverted signal of the first modulation wave input signal Vsine and the second carrier input signal Vtri2 are passed through the fourth comparison module Comp4 to generate the seventh switch tube drive signal VgsH4 and the eighth switch tube drive signal VgsL4.

[0127] For further information, please refer to Fig.10a and Fig.10b In one embodiment of the present application, the phase difference between the first carrier input signal Vtri1 and the second carrier input signal Vtri2 is 180°, the first carrier input signal Vtri1 and the second carrier input signal Vtri2 can both be sawtooth wave signals, and the first modulation wave input signal Vsine can be a sine wave signal.

[0128] Based on the above modulation key waveform (sine positive half cycle), within a complete carrier cycle (Tvtri1 or Tvtri1), the single-stage boost inverter circuit mainly includes seven different stages of working states, such as Figure 11a-11g As shown below. Fig. 9 And such as Figure 11a-11g Briefly introduce the working principle and characteristics of the single-stage boost inverter circuit. In order to simplify the analysis process, the following basic assumptions can be made first: 1. All power components and filter components are ideal devices. 2. The capacitive reactance values ​​of the first capacitor Cin1, the second capacitor Cin2, the third capacitor Co1 and the fourth capacitor Co2 are large enough, and the voltage ripple can be ignored. Therefore, the voltage value Vcin1 across the first capacitor Cin1 is basically equal to the voltage value Vcin2 across the second capacitor Cin2, and is equal to half of the voltage value Vcin across the input energy storage unit; the voltage value Vco1 across the third capacitor Co1 is basically equal to the voltage value Vco2 across the fourth capacitor Co2, and is equal to half of the voltage value Vco across the output energy storage unit. 3. The potential of the first power supply reference ground GND1 is 0. 4. The voltage transfer ratios of the first high-frequency transformer T1 and the second high-frequency transformer T2 are both 1.

[0129] Specifically, Fig. 9 The equivalent circuit diagram of the circuit shown in FIG. 1 when working in the first positive working mode is as follows: Fig.11a As shown, the first high-frequency switch tube S1H, the third high-frequency switch tube S2H, the sixth high-frequency switch tube S3L and the seventh high-frequency switch tube S4H are all turned on. On the one hand, the output current of the DC power supply Uin charges the first boost inductor L1 through the first high-frequency switch tube S1H and the sixth high-frequency switch tube S3L, and charges the first boost inductor L1 through the third high-frequency switch tube S2H and the sixth high-frequency switch tube S3L through the second path. The first boost inductor L1 stores energy, and the current flowing through it gradually increases; on the other hand, the third capacitor Co1 and the first capacitor Cin1 provide energy to the filter unit through the third high-frequency switch tube S2H, the seventh high-frequency switch tube S4H and the second high-frequency transformer T2. The potential difference VNL between the positive voltage node N and the negative voltage node L on the input side of the filter unit is equal to (Vin+Vco1-Vcin1)=1 / 2(Vco+Vcin), the voltage difference between the drain and the source of the second high-frequency switch tube S1L is equal to Vcin1+Vco2, the voltage difference between the drain and the source of the fourth high-frequency switch tube S2L is equal to Vcin1+Vco2, the voltage difference between the drain and the source of the fifth high-frequency switch tube S3H is equal to Vcin2+Vco1, and the voltage difference between the drain and the source of the eighth high-frequency switch tube S4L is equal to Vcin2+Vco1.

[0130] Specifically, Fig. 9The equivalent circuit diagram of the circuit shown in FIG. 1 when working in the second positive working mode is as follows: Fig.11b As shown, the first high-frequency switch tube S1H, the fourth high-frequency switch tube S2L, the sixth high-frequency switch tube S3L and the seventh high-frequency switch tube S4H are all turned on. On the one hand, the current output by the DC power supply Uin charges the first boost inductor L1 through the first high-frequency switch tube S1H and the sixth high-frequency switch tube S3L, and the first boost inductor L1 stores energy, and the current flowing through it gradually increases; on the other hand, the third capacitor Co1 and the fourth capacitor Co2 provide energy to the filter unit through the fourth high-frequency switch tube S2L, the seventh high-frequency switch tube S4H and the second high-frequency transformer T2. The potential difference VNL between the positive voltage node N and the negative voltage node L on the input side of the filter unit is equal to (Vin+Vco1+Vco2)=(Vco+Vcin), the voltage difference between the drain and the source of the second high-frequency switch tube S1L is equal to Vcin1+Vco2, the voltage difference between the drain and the source of the third high-frequency switch tube S2H is equal to Vcin1+Vco2, the voltage difference between the drain and the source of the fifth high-frequency switch tube S3H is equal to Vcin2+Vco1, and the voltage difference between the drain and the source of the eighth high-frequency switch tube S4L is equal to Vcin2+Vco1.

[0131] Specifically, Fig. 9 The equivalent circuit diagram of the circuit shown in FIG. 1 when working in the third positive working mode is as follows: Fig.11c As shown, the first high-frequency switch tube S1H, the fourth high-frequency switch tube S2L, the fifth high-frequency switch tube S3H and the seventh high-frequency switch tube S4H are all turned on. On the one hand, the reverse voltage drop borne by the first boost inductor L1 is (Vco1-Vcin1), and it begins to release energy, and the current flowing through it gradually decreases; on the other hand, the third capacitor Co1 and the fourth capacitor Co2 provide energy to the filter unit through the fourth high-frequency switch tube S2L, the seventh high-frequency switch tube S4H and the second high-frequency transformer T2. The potential difference VNL between the positive voltage node N and the negative voltage node L on the input side of the filter unit is equal to (Vco2+Vcin1)=1 / 2(Vco+Vcin), the voltage of the second high-frequency switch tube S1L is equal to Vcin1+Vco2, the voltage difference between the drain and the source of the third high-frequency switch tube S2H is equal to Vcin1+Vco2, the voltage difference between the drain and the source of the sixth high-frequency switch tube S3L is equal to Vcin2+Vco1, and the voltage difference between the drain and the source of the seventh high-frequency switch tube S4L is equal to Vcin2+Vco1.

[0132] Specifically, Fig. 9 The equivalent circuit diagram of the circuit shown in FIG. 1 when working in the fourth positive working mode is as follows: Fig.11dAs shown, the first high-frequency switch tube S1H, the fourth high-frequency switch tube S2L, the sixth high-frequency switch tube S3L and the eighth high-frequency switch tube S4L are all turned on. On the one hand, the current output by the DC power supply charges the first boost inductor L1 through the first high-frequency switch tube S1H and the sixth high-frequency switch tube S3L, and charges the first boost inductor L1 through the first high-frequency switch tube S1H and the eighth high-frequency switch tube S4L through the second path. The first boost inductor L1 stores energy, and the current flowing through it gradually increases; on the other hand, the third capacitor Co2 and the second capacitor Cin2 provide energy to the filter unit through the fourth high-frequency switch tube S2L, the eighth high-frequency switch tube S4L and the second high-frequency transformer T2. The potential difference VNL between the positive voltage node N and the negative voltage node L on the input side of the filter unit is equal to (Vin+Vco2-Vcin2)=1 / 2(Vco+Vcin), the voltage difference between the drain and the source of the second high-frequency switch tube S1L is equal to Vcin1+Vco2, the voltage difference between the drain and the source of the third high-frequency switch tube S2H is equal to Vcin1+Vco2, the voltage difference between the drain and the source of the fifth high-frequency switch tube S3H is equal to Vcin2+Vco1, and the voltage difference between the drain and the source of the sixth high-frequency switch tube S4H is equal to Vcin2+Vco1.

[0133] Specifically, Fig. 9 The equivalent circuit diagram of the circuit shown in FIG. 1 when working in the fifth positive working mode is as follows: Fig.11e As shown, the second high-frequency switch tube S1L, the fourth high-frequency switch tube S2L, the sixth high-frequency switch tube S3L and the seventh high-frequency switch tube S4H are all turned on. On the one hand, the reverse voltage drop borne by the first boost inductor L1 is (Vco2-Vcin2), and it begins to release energy, and the current flowing through it gradually decreases; on the other hand, the third capacitor Co1 and the fourth capacitor Co2 provide energy to the filter unit through the fourth high-frequency switch tube S2L, the seventh high-frequency switch tube S4H and the second high-frequency transformer T2. The potential difference VNL between the positive voltage node N and the negative voltage node L on the input side of the filter unit is equal to (Vco1+Vcin2)=1 / 2(Vco+Vcin), the voltage difference between the drain and the source of the first high-frequency switch tube S1H is equal to Vcin1+Vco2, the voltage difference between the drain and the source of the third high-frequency switch tube S2H is equal to Vcin1+Vco2, the voltage difference between the drain and the source of the fifth high-frequency switch tube S3H is equal to Vcin2+Vco1, and the voltage difference between the drain and the source of the eighth high-frequency switch tube S4L is equal to Vcin2+Vco1.

[0134] Specifically, Fig. 9 The equivalent circuit diagram of the circuit shown in FIG. 1 when working in the sixth positive working mode is as follows: Fig.11fAs shown, the first high-frequency switch tube S1H, the third high-frequency switch tube S2H, the fifth high-frequency switch tube S3H and the seventh high-frequency switch tube S4H are all turned on. On the one hand, the reverse voltage drop borne by the first boost inductor L1 is (Vco1-Vcin1), and it begins to release energy, and the current flowing through it gradually decreases; on the other hand, the third capacitor Co1 and the first capacitor Cin1 provide energy to the filter unit through the third high-frequency switch tube S2H, the seventh high-frequency switch tube S4H and the second high-frequency transformer T2. The potential difference VNL between the positive voltage node N and the negative voltage node L on the input side of the filter unit is equal to 0, the voltage difference between the drain and the source of the second high-frequency switch tube S1L is equal to Vcin1+Vco2, the voltage difference between the drain and the source of the fourth high-frequency switch tube S2L is equal to Vcin1+Vco2, the voltage difference between the drain and the source of the sixth high-frequency switch tube S3L is equal to Vcin2+Vco1, and the voltage difference between the drain and the source of the eighth high-frequency switch tube S4L is equal to Vcin2+Vco1.

[0135] Specifically, Fig. 9 The equivalent circuit diagram of the circuit shown in FIG. 1 when working in the seventh positive working mode is as follows: Figure 11g As shown, the second high-frequency switch tube S1L, the fourth high-frequency switch tube S2L, the sixth high-frequency switch tube S3L and the eighth high-frequency switch tube S4L are all turned on. On the one hand, the reverse voltage drop borne by the first boost inductor L1 is (Vco2-Vcin2), and it begins to release energy, and the current flowing through it gradually decreases; on the other hand, the fourth capacitor Co2 and the second capacitor Cin2 provide energy to the filter unit through the fourth high-frequency switch tube S2L, the eighth high-frequency switch tube S4L and the second high-frequency transformer T2. The potential difference VNL between the positive voltage node N and the negative voltage node L on the input side of the filter unit is equal to 0, the voltage difference between the drain and the source of the first high-frequency switch tube S1H is equal to Vcin1+Vco2, the voltage difference between the drain and the source of the third high-frequency switch tube S2H is equal to Vcin1+Vco2, the voltage difference between the drain and the source of the fifth high-frequency switch tube S3H is equal to Vcin2+Vco1, and the voltage difference between the drain and the source of the seventh high-frequency switch tube S4H is equal to Vcin2+Vco1.

[0136] In summary, the single-stage boost inverter circuit mainly operates in the above seven operating modes when the modulation wave is in the positive half cycle of the sine wave, thereby continuously converting the input DC power into the preset boosted AC power and outputting it to the next load. In the positive half cycle of the sine wave, the potential difference VNL between the positive voltage node N and the negative voltage node L on the input side of the filter unit has three level values ​​of 1 / 2 (Vco + Vcin), (Vco + Vcin) and 0.

[0137] Further, based on the above modulation key waveform (sine negative half cycle), within a complete carrier cycle (Tvtri1 or Tvtri1), the single-stage boost inverter circuit mainly includes seven different stages of working states, such as Figure 12a-12g As shown below. Fig. 9 And such as Figure 12a-12g The working principle and characteristics of the single-stage boost inverter circuit are briefly introduced.

[0138] Specifically, Fig. 9 The equivalent circuit diagram of the circuit shown in FIG. 1 when working in the first negative working mode is as follows: Fig.12a As shown, the first high-frequency switch tube S1H, the third high-frequency switch tube S2H, the fifth high-frequency switch tube S3H and the eighth high-frequency switch tube S4L are all turned on. On the one hand, the output current of the DC power supply Uin charges the first boost inductor L1 through the third high-frequency switch tube S2H and the eighth high-frequency switch tube S4L, and charges the first boost inductor L1 through the first high-frequency switch tube S1H and the eighth high-frequency switch tube S4L through the second path, the first boost inductor L1 stores energy, and the current flowing through it gradually increases; on the other hand, the third capacitor Co1 and the first capacitor Cin1 provide energy to the filter unit through the fifth high-frequency switch tube S3H, the first high-frequency switch tube S1H and the first high-frequency transformer T1. The potential difference VNL between the positive voltage node N and the negative voltage node L on the input side of the filter unit is equal to (Vcin1-Vin-Vco1)=-1 / 2(Vco+Vcin), the voltage difference between the drain and the source of the second high-frequency switch tube S1L is equal to Vcin1+Vco2, the voltage difference between the drain and the source of the fourth high-frequency switch tube S2L is equal to Vcin1+Vco2, the voltage difference between the drain and the source of the sixth high-frequency switch tube S3L is equal to Vcin2+Vco1, and the voltage difference between the drain and the source of the seventh high-frequency switch tube S4H is equal to Vcin2+Vco1.

[0139] Specifically, Fig. 9 The equivalent circuit diagram of the circuit shown in FIG. 1 when working in the second negative working mode is as follows: Figure 12bAs shown, the second high-frequency switch tube S1L, the third high-frequency switch tube S2H, the fifth high-frequency switch tube S3H and the eighth high-frequency switch tube S4L are all turned on. On the one hand, the output current of the DC power supply Uin charges the first boost inductor L1 through the third high-frequency switch tube S2H and the eighth high-frequency switch tube S4L, and the first boost inductor L1 stores energy, and the current flowing through it gradually increases; on the other hand, the third capacitor Co1 and the fourth capacitor Co2 provide energy to the filter unit through the second high-frequency switch tube S1L, the fifth high-frequency switch tube S3H and the first high-frequency transformer T1. The potential difference VNL between the positive voltage node N and the negative voltage node L on the input side of the filter unit is equal to -(Vin+Vco1+Vco2)=-(Vco+Vcin), the voltage difference between the drain and the source of the first high-frequency switch tube S1H is equal to Vcin1+Vco2, the voltage difference between the drain and the source of the fourth high-frequency switch tube S2L is equal to Vcin1+Vco2, the voltage difference between the drain and the source of the sixth high-frequency switch tube S3L is equal to Vcin2+Vco1, and the voltage difference between the drain and the source of the seventh high-frequency switch tube S4H is equal to Vcin2+Vco1.

[0140] Specifically, Fig. 9 The equivalent circuit diagram of the circuit shown in FIG. 1 when working in the third negative working mode is as follows: Fig.12c As shown, the second high-frequency switch tube S1L, the third high-frequency switch tube S2H, the fifth high-frequency switch tube S3H and the seventh high-frequency switch tube S4H are all turned on. On the one hand, the reverse voltage drop borne by the first boost inductor L1 is (Vco1-Vcin1), and it begins to release energy, and the current flowing through it gradually decreases; on the other hand, the third capacitor Co1 and the fourth capacitor Co2 provide energy to the filter unit through the second high-frequency switch tube S1L, the fifth high-frequency switch tube S3H and the first high-frequency transformer T1. The potential difference VNL between the positive voltage node N and the negative voltage node L on the input side of the filter unit is equal to -(Vco2+Vcin1)=-1 / 2(Vco+Vcin), the voltage difference between the drain and the source of the first high-frequency switch tube S1H is equal to Vcin1+Vco2, the voltage difference between the drain and the source of the fourth high-frequency switch tube S2L is equal to Vcin1+Vco2, the voltage difference between the drain and the source of the sixth high-frequency switch tube S3L is equal to Vcin2+Vco1, and the voltage difference between the drain and the source of the eighth high-frequency switch tube S4L is equal to Vcin2+Vco1.

[0141] Specifically, Fig. 9 The equivalent circuit diagram of the circuit shown in FIG. 1 when working in the fourth negative working mode is as follows: Fig.12dAs shown, the second high-frequency switch tube S1L, the third high-frequency switch tube S2H, the sixth high-frequency switch tube S3L and the eighth high-frequency switch tube S4L are all turned on. On the one hand, the current output by the DC power supply Uin charges the first boost inductor L1 through the third high-frequency switch tube S2H and the sixth high-frequency switch tube S3L, and charges the first boost inductor L1 through the third high-frequency switch tube S2H and the eighth high-frequency switch tube S4L through the second path, the first boost inductor L1 stores energy, and the current flowing through it gradually increases; on the other hand, the fourth capacitor Co2 and the second capacitor Cin2 provide energy to the filter unit through the second high-frequency switch tube S1L, the sixth high-frequency switch tube S3L and the first high-frequency transformer T1. The potential difference VNL between the positive voltage node N and the negative voltage node L on the input side of the filter unit is equal to (Vcin2-Vin-Vco2)=-1 / 2(Vco+Vcin), the voltage difference between the drain and the source of the first high-frequency switch tube S1H is equal to Vcin1+Vco2, the voltage difference between the drain and the source of the fourth high-frequency switch tube S2L is equal to Vcin1+Vco2, the voltage difference between the drain and the source of the fifth high-frequency switch tube S3H is equal to Vcin2+Vco1, and the voltage difference between the drain and the source of the seventh high-frequency switch tube S4H is equal to Vcin2+Vco1.

[0142] Specifically, Fig. 9 The equivalent circuit diagram of the circuit shown in FIG. 1 when working in the fifth negative working mode is as follows: Fig.12e As shown, the second high-frequency switch tube S1L, the fourth high-frequency switch tube S2L, the fifth high-frequency switch tube S3H and the eighth high-frequency switch tube S4L are all turned on. On the one hand, the reverse voltage drop borne by the first boost inductor L1 is (Vco2-Vcin2), and it begins to release energy, and the current flowing through it gradually decreases; on the other hand, the third capacitor Co1 and the fourth capacitor Co2 provide energy to the filter unit through the second high-frequency switch tube S1L, the fifth high-frequency switch tube S3H and the first high-frequency transformer T1. The potential difference VNL between the positive voltage node N and the negative voltage node L on the input side of the filter unit is equal to -(Vco1+Vcin2)=-1 / 2(Vco+Vcin), the voltage difference between the drain and the source of the first high-frequency switch tube S1H is equal to Vcin1+Vco2, the voltage difference between the drain and the source of the third high-frequency switch tube S2H is equal to Vcin1+Vco2, the voltage difference between the drain and the source of the sixth high-frequency switch tube S3L is equal to Vcin2+Vco1, and the voltage of S4H is equal to Vcin2+Vco1.

[0143] Specifically, Fig. 9 The equivalent circuit diagram of the circuit shown in FIG. 1 when working in the sixth negative working mode is as follows: Fig.12fAs shown, the first high-frequency switch tube S1H, the third high-frequency switch tube S2H, the fifth high-frequency switch tube S3H and the seventh high-frequency switch tube S4H are all turned on. On the one hand, the reverse voltage drop of the first boost inductor L1 is (Vco1-Vcin1), and it starts to release energy, and the current flowing through it gradually decreases; on the other hand, the third capacitor Co1 and the first capacitor Cin1 provide energy to the filter unit through the third high-frequency switch tube S2H, the seventh high-frequency switch tube S4H and the second high-frequency transformer T2. The potential difference VNL between the positive voltage node N and the negative voltage node L on the input side of the filter unit is equal to 0, the voltage of the second high-frequency switch tube S1L is equal to Vcin1+Vco2, the voltage difference between the drain and the source of S2L is equal to Vcin1+Vco2, the voltage difference between the drain and the source of the sixth high-frequency switch tube S3L is equal to Vcin2+Vco1, and the voltage difference between the drain and the source of the eighth high-frequency switch tube S4L is equal to Vcin2+Vco1.

[0144] Specifically, Fig. 9 The equivalent circuit diagram of the circuit shown in FIG. 1 when working in the seventh negative working mode is as follows: Figure 12g As shown, the second high-frequency switch tube S1L, the fourth high-frequency switch tube S2L, the sixth high-frequency switch tube S3L and the eighth high-frequency switch tube S4L are all turned on. On the one hand, the reverse voltage drop borne by the first boost inductor L1 is (Vco2-Vcin2), and it begins to release energy, and the current flowing through it gradually decreases; on the other hand, the fourth capacitor Co2 and the second capacitor Cin2 provide energy to the filter unit through the fourth high-frequency switch tube S2L, the eighth high-frequency switch tube S4L and the second high-frequency transformer T2. The potential difference between the positive voltage node N and the negative voltage node L on the input side of the filter unit is equal to Vcin1+Vco2, the voltage difference between the drain and the source of the third high-frequency switch tube S2H is equal to Vcin1+Vco2, the voltage difference between the drain and the source of the fifth high-frequency switch tube S3H is equal to Vcin2+Vco1, and the voltage difference between the drain and the source of the seventh high-frequency switch tube S4H is equal to Vcin2+Vco1.

[0145] In summary, the single-stage boost inverter circuit mainly operates in the above seven operating modes when the modulation wave is in the negative half cycle of the sine wave, thereby continuously converting the input DC power into a preset boosted AC power and outputting it to the next load. In the negative half cycle of the sine wave, the potential difference VNL between the positive voltage node N and the negative voltage node L on the input side of the filter unit has three level values ​​of -1 / 2 (Vco + Vcin), - (Vco + Vcin) and 0.

[0146] Therefore, no matter what state the single-stage boost inverter circuit is operating in, the voltage stress Vstress borne by the upper switch tube and the lower switch tube in each half-bridge module is half of the sum of the input and output voltages, that is, Vstress = 1 / 2 (Vco + Vin), and the absolute value of the potential difference VNL between the positive voltage node N and the negative voltage node L on the input side of the filter unit has three states: 1 / 2 (Vco + Vcin), (Vco + Vcin) and 0, that is, the circuit realizes the output voltage three-level function. In addition, the current pulsation frequency of the first boost inductor L1 and the current pulsation frequency of the filter inductor in the filter unit are both twice the frequency of the first carrier input signal Vtri1 (or the second carrier input signal Vtri2).

[0147] Further, in one embodiment of the present application, the half-bridge module in the single-stage boost inverter circuit includes two high-frequency switch tubes, an upper tube SnH and a lower tube SnL (n is 1, 2, 3, 4). In some embodiments, the upper tube SnH and the lower tube SnL are packaged in a single package. Please refer to Fig.13 , the upper tube SnH is installed in the first package, and the lower tube SnL is installed in the second package. The first package and the second package can be formed on the base 40, and the first package is insulated and isolated from the second package. The drain electrode 43' of the lower tube SnL is electrically connected to the conductive structure part of the first package, such as the base 40, and can also be alternatively electrically connected to the drain pin 103, such as through a conductive bonding wire 31. The gate 41 of the upper tube SnH is electrically connected to the gate pin 102, such as through a conductive bonding wire 32. The gate electrode 41' of the lower tube SnL can be electrically connected to the conductive pin 101, such as through a conductive bonding wire 33. The drain electrode 43 of the upper tube SnH is electrically connected to the source electrode 42' of the lower tube SnL, such as through a conductive bonding wire 34. One or both of the drain electrode 43 of the upper tube SnH and the source electrode 42′ of the lower tube SnL may be bonded to the middle pin, for example, by an electrode wire. For example, the source electrode 42′ of the upper tube SnH is electrically connected to the middle pin 104 by a conductive bonding wire 35. The source electrode 42 of the upper tube SnH is electrically connected to the source pin 105, for example, by a conductive bonding wire 36.

[0148] Furthermore, in one embodiment of the present application, the upper tube SnH and the lower tube SnL (n is 1, 2, 3, 4) in the input inverter bridge module and the output inverter bridge module are both III-N transistors, for example, they can be field effect transistors (FETs), high electron mobility transistors (HEMTs), heterojunction field effect transistors (HFETs), POLFETs, JFETs, MESFETs, CAVETs or any other III-N transistor structures suitable for power switching applications.

[0149] Further, in one embodiment of the present application, the III-N transistor is an enhancement mode (E-type) device, such as Fig.14a As shown, that is, a normally-off device, so that the threshold voltage is greater than 0V, for example, about 1.5V-2V or greater than 2V, and the enhancement type (E type) device does not contain a reverse body diode when using the enhancement type (E type) device, which can reduce the conduction loss of the single-stage boost inverter circuit when the device is reversely freewheeling. In other embodiments of the present application, the III-N transistor is composed of a high voltage III-N depletion type (D type) transistor and a low voltage enhancement type (E type) transistor cascaded, such as Fig.14b The depletion-type (D-type) device, i.e., the normally-on device, has a threshold voltage less than 0V. The low-voltage enhancement-type (E-type) transistor may be a low-voltage SiMOS device. In some embodiments of the present application, the III-N transistor further includes an externally connected reverse-parallel diode for reducing the reverse recovery loss of the device, such as Fig.14c shown.

[0150] Further, in one embodiment of the present application, the III-N transistor is a high voltage switching transistor. As used herein, a high voltage switching transistor is a transistor optimized for high voltage switching applications. That is, when the transistor is turned off, it is capable of blocking high voltages, such as about 300V, or higher about 600V, or higher about 1200V, or higher, and when the transistor is turned on, it has a sufficiently low on-resistance (Rdson) for the above applications, that is, when a large amount of current passes through the device, low conduction losses are achieved.

[0151] Further, in one embodiment of the present application, the first anti-backflow module and the second anti-backflow module in the single-stage boost inverter circuit are both III-N rectifying devices, and the III-N rectifying devices can be at least two lateral III-N diodes, which have insulating or semi-insulating parts on opposite sides of the semiconductor body relative to all electrodes, such as Fig.15 The III-N diode shown in FIG. Fig.15 The III-N diode in FIG. 1 includes an insulating or semi-insulating portion 61, a III-N buffer layer 63 (such as GaN) and a III-N barrier layer 64 (such as AlGaN), a semiconductor body 62 with a two-dimensional electron gas (2DEG) channel 65, an anode contact 28 contacting the semiconductor body 62 on the opposite side of the insulating or semi-insulating portion 61 and forming a Schottky contact with the semiconductor material of the semiconductor body 62, and a cathode contact 29 forming an ohmic contact with the 2DEG channel 65. The III-N diode may optionally include a conductive or semiconductive portion 66, such as a silicon substrate.

[0152] Further, in one embodiment of the present application, the III-N diode in the III-N rectifier device may be connected in a common anode manner, such as Fig.16a As shown, or common cathode connection, such as Fig.16b shown.

[0153] Further, in one embodiment of the present application, the III-N rectifier device is composed of two independently packaged III-N diodes and is electrically connected externally to form a III-N rectifier device, wherein the independently packaged III-N diodes are as follows: Fig.17a As shown, Fig.17a The diagram illustrates multiple portions of a package and an electronic device encapsulated or sealed in the package. Therein, the electronic component 90 includes a single III-N diode 22 that is encapsulated, encapsulated, or sealed in an independent package. The independent package includes multiple sealed structural portions, such as a package base 94, and non-structural portions, such as a first pin 91, a second pin 92, and a third pin 93. As used herein, a "structural portion" of a package is a portion of the package that forms the basic shape or molding of the package and provides the structural rigidity of the package required to protect the encapsulated device. In most cases, when an electronic component including a package is used in a discrete circuit, the structural portion of the package is mounted directly to the circuit or circuit board. Fig.17a In an independent package, the package base 94 is formed of a conductive material, that is, the package base 94 is a conductive structural part of the package. A single package includes at least two pins, an anode pin 91 and a cathode pin 93, and optionally includes at least one other pin, such as an open pin 92. The anode pin 91, the open pin 92 and the cathode pin 93 are all formed of a conductive material. When the open pin 92 is included, it can be electrically connected to the package base 94 or electrically insulated from the package base 94, and the other pins are all electrically insulated from the package base. As used herein, if two or more contacts or other items are connected by materials that are sufficiently conductive to ensure that the potential at each of the contacts or other items is always the same under any bias condition, that is, approximately the same material, then the two or more contacts or other items are referred to as "electrically connected".

[0154] When the III-N diode 22 is used for the III-N rectifying device, the III-N diode 22 is mounted inside a single package and connected as follows, the first conductive bonding wire 38 and the second conductive bonding wire 39 can be used to electrically connect the multiple parts of the package and the III-N diode 22 to each other. Among them, the corresponding insulating or semi-insulating substrates of the III-N diode 22 are all in contact with the package base 94. The cathode contact 29 of the III-N diode 22 is electrically connected to the conductive structure part of the package, such as the package base 94, or can be electrically connected to the cathode pin 93 of the package, such as through the second conductive bonding wire 39. The anode contact 28 of the III-N diode 22 is electrically connected to the anode pin 91 of the package, such as through the first conductive bonding wire 38.

[0155] Further, in one embodiment of the present application, the III-N rectifier device is composed of a double-tube packaged III-N diode, such as Fig.17b As shown, Fig.17b The diagram illustrates various portions of a package and an electronic device encapsulated or sealed within the package. Electronic component 90 includes a III-N diode 22 and a III-N diode 22' both encapsulated, encapsulated, or sealed within a dual tube package. The dual tube package includes a plurality of sealed structural portions, such as a package base 94, and non-structural portions, such as a first pin 91, a second pin 92, and a third pin 93. As used herein, a "structural portion" of a package is a portion of the package that forms the basic shape or molding of the package and provides the structural rigidity of the package required to protect the encapsulated device. In most cases, when an electronic component including a package is used in a discrete circuit, the structural portion of the package is mounted directly to the circuit or circuit board. In Fig.17b In the double tube package of the present invention, the package base 94 is formed of a conductive material, that is, the package base 94 is a conductive structural part of the package. A single package includes at least three pins, an anode pin 91, a cathode pin 93 and a common cathode pin 92. The anode pin 91, the cathode pin 93 and the common cathode pin 92 are all formed of a conductive material. The common cathode pin 92 can be electrically connected to the package base 94 or electrically insulated from the package base 94, and all other pins are electrically insulated from the package base. As used herein, if two or more contacts or other items are connected by materials that are sufficiently conductive to ensure that the potential at each of the contacts or other items is always the same, that is, approximately the same, under any bias condition, then two or more contacts or other items are referred to as "electrically connected".

[0156] For details, please continue to refer to Fig.17bWhen the III-N diode is used for the III-N rectifier device, the III-N diode 22 and the III-N diode 22' are mounted inside the double tube package and connected as follows, the first conductive bonding wire 38, the second conductive bonding wire 38' and the third conductive bonding wire 39 can be used to electrically connect the multiple parts of the package, the III-N diode 22 and the III-N diode 22' to each other. The insulating or semi-insulating substrates of the III-N diode 22 and the III-N diode 22' are in contact with the package base 94. The cathode contact 29 of the III-N diode 22 and the cathode contact 29' of the III-N diode 22' are electrically connected to the conductive structure part of the package, such as the package base 94, and are also electrically connected to the common cathode pin 92 of the package through the third conductive bonding wire 39. Anode contact 28 of III-N diode 22 is electrically connected to an anode pin 91 of the package, such as by a first conductive bond wire 38 , and anode contact 28 ′ of III-N diode 22 ′ is electrically connected to an anode pin 93 of the package, such as by a second conductive bond wire 38 ′.

[0157] Please refer to Fig.18a , Fig.18b and Fig.18c ,in, Fig.18a The current ILin of the first boost inductor L of the single-stage boost inverter circuit and the first carrier input signal Vtri1 show that the pulsation frequency of the current ILin of the inductor L is twice the switching frequency. Therefore, the single-stage boost inverter circuit can greatly reduce the volume of the filter inductor compared with the traditional two-level inverter device at the same power level. Fig.18b The terminal voltage Vco1 of the third capacitor Co1 and the terminal voltage Vco2 of the fourth capacitor Co2 of the single-stage boost inverter circuit, the voltage stress borne by the upper tube SnH and the lower tube SnL (n is 1, 2, 3, 4) of the input inverter bridge module and the output inverter bridge module respectively, it can be seen that the maximum value of the voltage stress of all switching tubes is half of the sum of (Vco1+Vco2), which meets the three-level voltage stress characteristics. Fig.18c The input voltage Vin of the input DC power supply Uin of the single-stage boost inverter circuit, the terminal voltage of the load Rl is Vo, and the potential difference between the positive voltage node N and the negative voltage node L on the input side of the filter unit is VNL. It can be seen that the single-stage boost inverter circuit meets the application requirements of three-level output voltage while completing single-stage boost and DC-AC power conversion.

[0158] Furthermore, in one embodiment of the present application, a power conversion device is provided, comprising a single-stage boost inverter circuit as described in any of the embodiments of the present application, for converting input direct current into a preset boosted alternating current.

[0159] Specifically, in the power conversion device in the above embodiment, an inductive energy storage anti-backflow unit is connected in series between the input inverter bridge module and the output inverter bridge module, and a capacitive energy storage unit is provided to cooperate with the input inverter bridge module, the output inverter bridge module and the inductive energy storage anti-backflow unit to realize the inversion and boosting of the input DC power to the preset boosted AC power and then output to the next level load. Due to the coordinated action of the input inverter bridge module and the output inverter bridge module, the harmonic content in the output voltage to the next level load is effectively reduced, and the waveform quality can be improved while reducing the volume of the input filter element and the output filter element. Since the single-stage boost inverter circuit in the power conversion device provided in the present application can realize the power conversion in the new energy power generation occasion from the original two-stage power conversion in the first-stage conversion, it can effectively reduce the design cost of the power conversion device and improve the cost performance and integration of the power conversion device.

[0160] Furthermore, in one embodiment of the present application, a single-stage boost inverter control method is provided, comprising:

[0161] Step 202: Generate an input inverter bridge control signal and an output inverter bridge control signal according to the first carrier input signal, the second carrier input signal and the first modulation wave input signal;

[0162] Step 204: Based on the input inverter bridge control signal, the on / off of each switch unit in the input inverter bridge module is controlled, and based on the output inverter bridge control signal, the on / off of each switch unit in the output inverter bridge module is controlled, so that the inductive energy storage backflow prevention unit outputs a preset boosted AC power to the next level load; the first port of the inductive energy storage backflow prevention unit is connected to the third port of the input inverter bridge module, the second port of the inductive energy storage backflow prevention unit is connected to the fourth port of the input inverter bridge module, the third port of the inductive energy storage backflow prevention unit is connected to the third port of the output inverter bridge module, and the inductive energy storage backflow prevention unit is connected to the third port of the output inverter bridge module. The fourth port of the energy storage backflow prevention unit is connected to the fourth port of the output inverter bridge module; wherein, the first port of the input inverter bridge module is connected to the first port of the capacitive energy storage unit, the second port of the capacitive energy storage unit is connected to the second port of the input inverter bridge module, the third port of the capacitive energy storage unit is connected to the first port of the output inverter bridge module, the fourth port of the capacitive energy storage unit is connected to the second port of the output inverter bridge module, the first port of the input inverter bridge module is used to be connected to the positive output end of the DC power supply, and the fourth port of the capacitive energy storage unit is used to be connected to the negative output end of the DC power supply and to the ground.

[0163] Specifically, in the single-stage boost inversion method in the above embodiment, an input inverter bridge control signal and an output inverter bridge control signal are generated according to the first carrier input signal, the second carrier input signal and the first modulation wave input signal; the conduction and shutdown of each switch unit in the input inverter bridge module are controlled based on the input inverter bridge control signal, and the conduction and shutdown of each switch unit in the output inverter bridge module are controlled based on the output inverter bridge control signal, so that the inductive energy storage anti-backflow unit outputs a preset boosted AC to the next load. This embodiment effectively reduces the harmonic content in the output voltage to the next load, and can improve the waveform quality while reducing the volume of the input filter element and the output filter element.

[0164] The specific definition of the single-stage boost inverter method in the above embodiment can be found in the above definition of the single-stage boost inverter circuit, which will not be repeated here.

[0165] It should be understood that, unless otherwise specified herein, the execution of the steps described is not strictly limited in order, and the steps may be executed in other orders. Moreover, at least a portion of the steps described may include multiple sub-steps or multiple stages, and these sub-steps or stages are not necessarily executed at the same time, but may be executed at different times, and the execution order of these sub-steps or stages is not necessarily sequential, but may be executed in turn or alternately with other steps or at least a portion of the sub-steps or stages of other steps.

[0166] A person skilled in the art can understand that all or part of the processes in the above-mentioned embodiments can be implemented by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to memory, storage, database or other media used in the embodiments provided in this application can include non-volatile and / or volatile memory.

[0167] Please note that the above embodiments are for illustrative purposes only and are not meant to limit the present invention.

[0168] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0169] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0170] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A single-stage boost inverter circuit, characterized in that: include: Input inverter bridge module; Output inverter bridge module; a capacitive energy storage unit, wherein a first port of the capacitive energy storage unit is connected to the first port of the input inverter bridge module, a second port of the capacitive energy storage unit is connected to the second port of the input inverter bridge module, a third port of the capacitive energy storage unit is connected to the first port of the output inverter bridge module, and a fourth port of the capacitive energy storage unit is connected to the second port of the output inverter bridge module; the first port of the capacitive energy storage unit is used to be connected to the positive output terminal of the DC power supply, and the fourth port of the capacitive energy storage unit is used to be connected to the negative output terminal of the DC power supply and to ground; An inductive energy storage anti-backflow unit, wherein the first port of the inductive energy storage anti-backflow unit is connected to the third port of the input inverter bridge module, the second port of the inductive energy storage anti-backflow unit is connected to the fourth port of the input inverter bridge module, the third port of the inductive energy storage anti-backflow unit is connected to the third port of the output inverter bridge module, and the fourth port of the inductive energy storage anti-backflow unit is connected to the fourth port of the output inverter bridge module; The input inverter bridge module and the output inverter bridge module are controlled to work together so that the inductive energy storage anti-backflow unit outputs a preset boosted AC power to the next level load. The inductive energy storage backflow prevention unit includes: a first anti-backflow module, wherein a first input port of the first anti-backflow module is connected to the third port of the input inverter bridge module, and a second input port of the first anti-backflow module is connected to the fourth port of the input inverter bridge module; an inductive energy storage unit, wherein a first port of the inductive energy storage unit is connected to an output port of the first anti-backflow module; A second anti-backflow module, the input port of the second anti-backflow module is connected to the second port of the inductive energy storage unit, the first output port of the second anti-backflow module is connected to the third port of the output inverter bridge module, and the second output port of the second anti-backflow module is connected to the fourth port of the output inverter bridge module.

2. The single-stage boost inverter circuit according to claim 1, characterized in that: The inductive energy storage unit is a first boost inductor.

3. The single-stage boost inverter circuit according to claim 2, characterized in that: The first anti-backflow module includes: a first diode, wherein an anode of the first diode is connected to the third port of the input inverter bridge module, and a cathode of the first diode is connected to the first port of the inductive energy storage unit; a second diode, wherein an anode of the second diode is connected to the fourth port of the input inverter bridge module, and a cathode of the second diode is connected to the first port of the inductive energy storage unit.

4. The single-stage boost inverter circuit according to claim 2, characterized in that: The second anti-backflow module includes: a third diode, wherein an anode of the third diode is connected to the second port of the inductive energy storage unit, and a cathode of the third diode is connected to the third port of the output inverter bridge module; A fourth diode, wherein an anode of the fourth diode is connected to the second port of the inductive energy storage unit, and a cathode of the fourth diode is connected to the fourth port of the output inverter bridge module.

5. The single-stage boost inverter circuit according to any one of claims 1 to 4, characterized in that: The capacitive energy storage unit comprises: An input energy storage unit, wherein a first port of the input energy storage unit is connected to a first port of the input inverter bridge module, and a second port of the input energy storage unit is connected to a second port of the output inverter bridge module; An output energy storage unit, wherein a first port of the output energy storage unit is connected to the first port of the output inverter bridge module, a second port of the output energy storage unit is connected to the second port of the input inverter bridge module, and a third port of the output energy storage unit is connected to the third port of the input energy storage unit.

6. The single-stage boost inverter circuit according to claim 5, wherein: The input energy storage unit includes a first capacitor and a second capacitor connected in series, wherein the input port of the first capacitor is connected to the first port of the input inverter bridge module, the output port of the second capacitor is connected to the second port of the output inverter bridge module, and the output port of the first capacitor is connected to the third port of the output energy storage unit; and / or The output energy storage unit includes a third capacitor and a fourth capacitor connected in series, wherein the input port of the third capacitor is connected to the first port of the output inverter bridge module, the output port of the third capacitor is connected to the output port of the first capacitor and the input port of the second capacitor, and the output port of the fourth capacitor is connected to the second port of the input inverter bridge module.

7. The single-stage boost inverter circuit according to any one of claims 1 to 4, characterized in that: The input inverter bridge module includes: a first upper arm switch unit, wherein a first port of the first upper arm switch unit is connected to a first port of the capacitive energy storage unit; a first lower bridge arm switch unit, wherein a first port of the first lower bridge arm switch unit is connected to a second port of the first upper bridge arm switch unit; a second upper bridge arm switch unit, wherein a first port of the second upper bridge arm switch unit is connected to the first port of the capacitive energy storage unit; a second lower bridge arm switch unit, wherein a first port of the second lower bridge arm switch unit is connected to a second port of the second upper bridge arm switch unit; The second port of the first upper arm switch unit is connected to the first port of the inductive energy storage anti-backflow unit, and the second port of the second upper arm switch unit is connected to the second port of the inductive energy storage anti-backflow unit.

8. The single-stage boost inverter circuit according to claim 7, wherein: The first upper bridge arm switch unit includes a first high-frequency switch tube, and the drain of the first high-frequency switch tube is connected to the first port of the capacitive energy storage unit; The first lower bridge arm switch unit includes a second high-frequency switch tube, the drain of the second high-frequency switch tube is connected to the source of the first high-frequency switch tube, and the source of the second high-frequency switch tube is connected to the second port of the capacitive energy storage unit; The second upper bridge arm switch unit includes a third high-frequency switch tube, and the drain of the third high-frequency switch tube is connected to the first port of the capacitive energy storage unit; The second lower bridge arm switch unit includes a fourth high-frequency switch tube, the drain of the fourth high-frequency switch tube is connected to the source of the third high-frequency switch tube, and the source of the fourth high-frequency switch tube is connected to the second port of the capacitive energy storage unit; The source of the first high-frequency switch tube is connected to the first port of the inductive energy storage backflow prevention unit, and the source of the third high-frequency switch tube is connected to the second port of the inductive energy storage backflow prevention unit.

9. The single-stage boost inverter circuit according to any one of claims 1 to 4, characterized in that: The output inverter bridge module includes: a third upper bridge arm switch unit, wherein a first port of the third upper bridge arm switch unit is connected to a third port of the capacitive energy storage unit; a third lower bridge arm switch unit, wherein a first port of the third lower bridge arm switch unit is connected to the second port of the third upper bridge arm switch unit, and a second port of the third lower bridge arm switch unit is connected to the fourth port of the capacitive energy storage unit; a fourth upper bridge arm switch unit, wherein the first port of the fourth upper bridge arm switch unit is connected to the third port of the capacitive energy storage unit; a fourth lower bridge arm switch unit, wherein the first port of the fourth lower bridge arm switch unit is connected to the second port of the fourth upper bridge arm switch unit, and the second port of the fourth lower bridge arm switch unit is connected to the fourth port of the capacitive energy storage unit; The second port of the third upper arm switch unit is connected to the third port of the inductive energy storage anti-backflow unit, and the second port of the fourth upper arm switch unit is connected to the fourth port of the inductive energy storage anti-backflow unit.

10. The single-stage boost inverter circuit according to claim 9, wherein: The third upper bridge arm switch unit includes a fifth high-frequency switch tube, and the drain of the fifth high-frequency switch tube is connected to the third port of the capacitive energy storage unit; The third lower bridge arm switch unit includes a sixth high-frequency switch tube, the drain of the sixth high-frequency switch tube is connected to the source of the fifth high-frequency switch tube, and the source of the sixth high-frequency switch tube is connected to the fourth port of the capacitive energy storage unit; The fourth upper bridge arm switch unit includes a seventh high-frequency switch tube, and the drain of the seventh high-frequency switch tube is connected to the third port of the capacitive energy storage unit; The fourth lower bridge arm switch unit includes an eighth high-frequency switch tube, the drain of the eighth high-frequency switch tube is connected to the source of the seventh high-frequency switch tube, and the source of the eighth high-frequency switch tube is connected to the fourth port of the capacitive energy storage unit.

11. The single-stage boost inverter circuit according to any one of claims 1 to 4, characterized in that: Also includes: a first electromagnetic isolation module, wherein a first port of the first electromagnetic isolation module is connected to the third port of the input inverter bridge module, and a second port of the first electromagnetic isolation module is connected to the third port of the output inverter bridge module; and / or A second electromagnetic isolation module, wherein a first port of the second electromagnetic isolation module is connected to the fourth port of the input inverter bridge module, and a second port of the second electromagnetic isolation module is connected to the fourth port of the output inverter bridge module.

12. The single-stage boost inverter circuit according to claim 11, characterized in that: The first electromagnetic isolation module includes a first high-frequency transformer, a first port of the first high-frequency transformer is connected to the third port of the input inverter bridge module, and a second port of the first high-frequency transformer is connected to the third port of the output inverter bridge module; and / or The second electromagnetic isolation module includes a second high-frequency transformer, a first port of the second high-frequency transformer is connected to the fourth port of the input inverter bridge module, and a second port of the second high-frequency transformer is connected to the fourth port of the output inverter bridge module.

13. The single-stage boost inverter circuit according to claim 12, characterized in that: Also includes: A filtering unit, wherein a first port of the filtering unit is connected to the output port of the first high-frequency transformer, and a second port of the filtering unit is connected to the output port of the second high-frequency transformer.

14. A power conversion device, characterized in that: include: The single-stage boost inverter circuit according to any one of claims 1 to 13 is used to convert input direct current into a preset boosted alternating current.

15. A single-stage boost inverter control method, characterized in that: include: generating an input inverter bridge control signal and an output inverter bridge control signal according to the first carrier input signal, the second carrier input signal and the first modulated wave input signal; Based on the input inverter bridge control signal, the conduction and shutdown of each switch unit in the input inverter bridge module are controlled, and based on the output inverter bridge control signal, the conduction and shutdown of each switch unit in the output inverter bridge module are controlled, so that the inductive energy storage backflow prevention unit outputs a preset boosted AC power to the next level load; the first port of the inductive energy storage backflow prevention unit is connected to the third port of the input inverter bridge module, the second port of the inductive energy storage backflow prevention unit is connected to the fourth port of the input inverter bridge module, the third port of the inductive energy storage backflow prevention unit is connected to the third port of the output inverter bridge module, and the fourth port of the inductive energy storage backflow prevention unit is connected to the fourth port of the output inverter bridge module; Wherein, the first port of the input inverter bridge module is connected to the first port of the capacitive energy storage unit, the second port of the capacitive energy storage unit is connected to the second port of the input inverter bridge module, the third port of the capacitive energy storage unit is connected to the first port of the output inverter bridge module, the fourth port of the capacitive energy storage unit is connected to the second port of the output inverter bridge module, the first port of the input inverter bridge module is used to be connected to the positive output terminal of the DC power supply, and the fourth port of the capacitive energy storage unit is used to be connected to the negative output terminal of the DC power supply and the ground; The inductive energy storage backflow prevention unit includes: a first anti-backflow module, wherein a first input port of the first anti-backflow module is connected to the third port of the input inverter bridge module, and a second input port of the first anti-backflow module is connected to the fourth port of the input inverter bridge module; an inductive energy storage unit, wherein a first port of the inductive energy storage unit is connected to an output port of the first anti-backflow module; A second anti-backflow module, the input port of the second anti-backflow module is connected to the second port of the inductive energy storage unit, the first output port of the second anti-backflow module is connected to the third port of the output inverter bridge module, and the second output port of the second anti-backflow module is connected to the fourth port of the output inverter bridge module.

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