Circuit board material, prepreg base material and circuit board

Abstract

The present invention discloses a circuit substrate material, a prepreg substrate and a circuit substrate. The circuit substrate material comprises a resin composition, which comprises: 10 to 75 parts by weight (phr) of a polyphenylene ether thermosetting resin, 5 to 40 parts by weight of a polybutadiene thermosetting resin and 5 to 35 parts by weight of a compatibilizer. The polyphenylene ether thermosetting resin has at least one modifying group, and the at least one modifying group is selected from the group consisting of a hydroxyl group, an amine group, a vinyl group, a styrene group, a methacrylate group and an epoxy group. The compatibilizer is a linear olefin polymer.

Description

Technical Field

[0001] The present invention relates to a circuit substrate material, a prepreg base material and a circuit substrate, and in particular to a circuit substrate material, a prepreg base material and a circuit substrate based on a resin composition. Background Art

[0002] In recent years, the technologies related to wireless networks and satellite communications have been gradually improved. In order to transmit signals in larger quantities and faster, electronic devices are gradually developing towards high speed and high frequency. Network infrastructure devices, handheld devices, routers, network base stations, servers and large computers that realize signal transmission are also committed to high speed and high frequency signal transmission, large capacity and high integrity. Therefore, under the development trend of high speed and high frequency, the performance of printed circuit boards (PCBs) installed in electronic devices needs to be improved accordingly to reduce the loss in signal transmission and meet the application requirements of high-frequency signals.

[0003] The circuit board resin composition mentioned in US Patent No. 7838576 is mainly made of polyphenylene ether with a number average molecular weight between 1000 g / mol and 7000 g / mol, and is added with a crosslinking agent, a flame retardant and a filler. This resin composition has good melt fluidity, but poor electrical properties and heat resistance.

[0004] U.S. Patent No. 5,223,568 discloses a resin composition, in which polybutadiene or polyisoprene resin with a molecular weight of less than 5,000 g / mol is used as the main material to prepare a circuit substrate with good physical properties. However, the curing temperature of this resin composition is higher than 250°C, and traditional circuit board manufacturing equipment cannot meet this temperature limit. In addition, the film made of polybutadiene or polyisoprene resin has high viscosity, which is difficult to store or transport, and is not conducive to the process of automatically pressing circuit substrates.

[0005] U.S. Patent No. 4,784,917 discloses a resin composition that can be used as a circuit substrate material. The resin composition is based on polybutadiene as the main resin, and a prepolymer of bromine-containing poly-p-hydroxystyrene (molecular weight 150,000 g / mol) is added to reduce the viscosity of the film. However, whether adding other resins to modify polybutadiene, or using polybutadiene resin to modify other resins, the overall properties of the resin composition will be affected, and it is impossible to take into account viscosity and other properties such as melt flow ability, chemical resistance, heat resistance, mechanical properties and electrical properties. Summary of the invention

[0006] The technical problem to be solved by the present invention is to provide a circuit substrate material, a prepreg base material and a circuit substrate in view of the deficiencies in the prior art.

[0007] In order to solve the above technical problems, one of the technical solutions adopted by the present invention is to provide a circuit substrate material, which includes a resin composition, and the resin composition includes: 10 to 75 parts by weight (phr) of polyphenylene ether thermosetting resin, 5 to 40 parts by weight of polybutadiene thermosetting resin, and 5 to 35 parts by weight of a compatibilizer. The polyphenylene ether thermosetting resin has at least one modifying group, and the at least one modifying group is selected from the group consisting of: hydroxyl, amine, vinyl, styrene, methacrylate, and epoxy. The compatibilizer is a linear olefin polymer.

[0008] Preferably, the opposite two ends of the polyphenylene ether thermosetting resin have the same modified group.

[0009] Preferably, the resin composition further comprises: 10 to 40 parts by weight of a cross-linking agent, wherein the cross-linking agent comprises phenyl groups.

[0010] Preferably, the cross-linking agent comprises triallyl cyanurate, triallyl isocyanurate, diallyl phthalate, divinylbenzene, triallyl trimellitate or any combination thereof.

[0011] Preferably, the polybutadiene thermosetting resin has at least one side chain containing alkenyl groups, and the content of alkenyl groups in the polybutadiene thermosetting resin is greater than or equal to 20 wt %.

[0012] Preferably, the carbon number of the alkenyl-containing side chain in the polybutadiene thermosetting resin is 2 to 10.

[0013] Preferably, the alkenyl-containing side chain in the polybutadiene thermosetting resin is selected from the group consisting of vinyl, acrylic, styrene and any combination thereof.

[0014] Preferably, the compatibilizer is selected from the group consisting of polyethylene copolymers, polypropylene copolymers, methyl styrene copolymers, cyclic olefin copolymers and any combination thereof.

[0015] Preferably, the compatibilizer has at least one alkenyl-containing side chain, and the alkenyl-containing side chain of the compatibilizer has 2 to 10 carbon atoms.

[0016] Preferably, the alkenyl-containing side chain in the compatibilizer is selected from the group consisting of vinyl, acrylic, styrene and any combination thereof.

[0017] Preferably, the compatibilizer does not contain hydroxyl groups.

[0018] Preferably, the circuit substrate material further comprises a filler, and the total weight of the filler is 0.4 to 2.5 times the total weight of the resin composition.

[0019] Preferably, the inorganic filler is selected from the group consisting of aluminum hydroxide, aluminum oxide, magnesium hydroxide, silicon dioxide and any combination thereof.

[0020] Preferably, the circuit substrate material further comprises a flame retardant, and the total weight of the flame retardant is 0.2 to 1.5 times the total weight of the resin composition.

[0021] In order to solve the above technical problems, another technical solution adopted by the present invention is to provide a prepreg substrate, which includes a reinforcing material and a circuit substrate material. The circuit substrate material is arranged on the reinforcing material, and the circuit substrate material includes a resin composition, and the resin composition includes: 10 to 75 parts by weight of polyphenylene ether thermosetting resin, 5 to 40 parts by weight of polybutadiene thermosetting resin and 5 to 35 parts by weight of compatibilizer. The polyphenylene ether thermosetting resin has at least one modifying group, and at least one modifying group is selected from the group consisting of: hydroxyl, amine, vinyl, styrene, methacrylate and epoxy. The compatibilizer is a linear olefin polymer.

[0022] Preferably, the reinforcing material has pores, and the reinforcing material is selected from: glass fiber, carbon fiber, Kevlar fiber, polyester fiber, quartz fiber or any combination thereof. The circuit substrate material fills the pores of the reinforcing material or covers the surface of the reinforcing material.

[0023] In order to solve the above-mentioned technical problems, another technical solution adopted by the present invention is to provide a circuit substrate, which includes a prepreg substrate and at least one circuit layer. At least one circuit layer is arranged on the surface of the prepreg substrate. The prepreg substrate includes a reinforcement material and a circuit substrate material, and the circuit substrate material is arranged on the reinforcement material. The circuit substrate material includes a resin composition, and the resin composition material includes: 10 to 75 parts by weight of polyphenylene ether thermosetting resin, 5 to 40 parts by weight of polybutadiene thermosetting resin and 5 to 35 parts by weight of compatibilizer. The compatibilizer is a linear olefin polymer. The end of the polyphenylene ether thermosetting resin has at least one modifying group, and at least one modifying group is selected from the group consisting of: hydroxyl, amine, vinyl, styrene, methacrylate and epoxy. The compatibilizer is a linear olefin polymer.

[0024] One of the beneficial effects of the present invention is that the wound solid electrolytic capacitor packaging structure and its manufacturing method provided by the present invention can reduce the dielectric constant and dielectric loss factor of the circuit substrate through the technical solution of "the resin composition includes polyphenylene ether thermosetting resin, polybutadiene thermosetting resin and compatibilizer".

[0025] To further understand the features and technical contents of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are only for reference and description and are not intended to limit the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is a three-dimensional schematic diagram of the prepreg substrate of the present invention.

[0027] Figure 2 The figure is a side cross-sectional schematic diagram of a circuit substrate according to one embodiment of the present invention.

[0028] Figure 3 FIG. 4 is a side cross-sectional schematic diagram of a circuit substrate according to another embodiment of the present invention. DETAILED DESCRIPTION

[0029] The following is an explanation of the implementation methods of the "circuit substrate material, prepreg substrate and circuit substrate" disclosed in the present invention through specific examples. Those skilled in the art can understand the advantages and effects of the present invention from the contents disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed in various ways based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are only simple schematic illustrations and are not depicted according to actual dimensions. It is stated in advance. The following implementation methods will further explain the relevant technical contents of the present invention in detail, but the disclosed contents are not intended to limit the scope of protection of the present invention. In addition, the term "or" used in this article may include any one or more combinations of the associated listed items depending on the actual situation.

[0030] The invention discloses a circuit substrate material, which mainly comprises a resin composition.

[0031] The resin composition includes 10 to 75 parts by weight of a polyphenylene ether thermosetting resin, 5 to 40 parts by weight of a polybutadiene thermosetting resin, 5 to 35 parts by weight of a compatibilizer, and 10 to 40 parts by weight of a cross-linking agent.

[0032] The polyphenylene ether thermosetting resin has at least one modified group, which can be selected from the group consisting of: hydroxyl, amine, vinyl, styrene, methacrylate, epoxy, and combinations thereof. The modified group of the polyphenylene ether thermosetting resin can provide unsaturated bonds for cross-linking reactions to form an insulating layer material with a high glass transition temperature (Tg) and good heat resistance.

[0033] In this embodiment, the molecular structure of the polyphenylene ether thermosetting resin has a modification group at each of the two opposite ends, and the two modification groups are the same. For example, the polyphenylene ether thermosetting resin can be MX90 (modification groups at both ends are hydroxyl groups) or MX9000 (modification groups at both ends are methacrylate groups) produced by Saudi Basic Industries Corporation (SABIC), or OPE-2St (modification groups at both ends are styrene groups), OPE-2EA (modification groups at both ends are methacrylate groups) or OPE-2Gly (modification groups at both ends are epoxy groups) produced by Mitsubishi Gas Chemical Co., Ltd. (MGC). However, the present invention is not limited thereto.

[0034] In this embodiment, the weight average molecular weight of the polyphenylene ether thermosetting resin is 1000 g / mol to 5000 g / mol. The preferred amount of the polyphenylene ether thermosetting resin can be further defined as 20 parts by weight to 60 parts by weight.

[0035] The polybutadiene thermosetting resin has at least one alkenyl-containing side chain. The alkenyl-containing side chain in the polybutadiene thermosetting resin can provide unsaturated bonds for cross-linking reactions, thereby increasing the crosslinking density of the cross-linked resin composition and having good heat resistance. In addition, the alkenyl-containing side chain in the polybutadiene thermosetting resin can increase the fluidity of the resin composition and further optimize the filling property of the resin composition.

[0036] In this embodiment, the content of alkenyl in the polybutadiene thermosetting resin is greater than or equal to 20 weight percent (wt%). In a preferred embodiment, the content of alkenyl in the polybutadiene thermosetting resin is 20 weight percent to 40 weight percent. Specifically, the carbon number of the side chain containing alkenyl in the polybutadiene thermosetting resin is 2 to 10, and the side chain containing alkenyl is selected from the group consisting of: vinyl, acrylic, styrene and any combination thereof. For example, the polybutadiene thermosetting resin can be Ricon150, Ricon153, Ricon154 or Ricon184 produced by SARTOMER, or PB-1000, PB-2000 or PB-3000 produced by Nippon Soda Co., Ltd. However, the present invention is not limited thereto.

[0037] In this embodiment, the weight average molecular weight of the polybutadiene thermosetting resin is 3000 g / mol to 50000 g / mol, and it can be solid or liquid at room temperature. The preferred amount of the polybutadiene thermosetting resin can be further defined as 10 parts by weight to 30 parts by weight.

[0038] Compatibilizer is a non-polar polymer that helps improve the miscibility of polyphenylene ether thermosetting resin and polybutadiene thermosetting resin. The form of compatibilizer varies depending on the molecular weight. When the carbon number is 5 to 16, the compatibilizer is usually liquid. When the carbon number increases, the compatibilizer can also be solid.

[0039] In this embodiment, the compatibilizer is a linear olefin polymer, and a plurality of polymer units will form a linear polymer after polymerization, but the structure of the polymer unit is not limited. In other words, the compatibilizer is a linear polymer (LinearPolymer), and will not be a branched polymer (BranchedPolymer), a network polymer (NetworkPolymer) or a cyclic polymer (MacrocyclicPolymer). In addition, the compatibilizer will not be a polybutadiene thermosetting resin.

[0040] Specifically, the compatibilizer may be a polyethylene copolymer, a polypropylene copolymer, a methyl styrene copolymer, a cyclic olefin copolymer or any combination thereof, but is not limited thereto.

[0041] In this embodiment, the compatibilizer has at least one alkenyl-containing side chain with a carbon number of 2 to 10. The alkenyl-containing side chain in the compatibilizer can help the polyphenylene ether thermosetting resin and the polybutadiene thermosetting resin to be miscible, and reduce the hygroscopicity, dielectric constant and dielectric loss factor of the resin composition. In a preferred embodiment, the alkenyl-containing side chain can be selected from the group consisting of: vinyl, propylene, styrene and any combination thereof. In another preferred embodiment, the compatibilizer does not have a hydroxyl group. If the compatibilizer has a hydroxyl group, the heat resistance and electrical properties of the resin composition will decrease and the hygroscopicity will increase.

[0042] For example, the compatibilizer can be G1643, G1645, G1762, MD1648 or MD6951 produced by Kraton, or RB810, RB820, RB830, RB840 produced by JSR of Japan, or TPX resin, TAFMER resin, APEL resin, FTR resin, HIWAX resin or EXCEREX resin produced by Mitsui Chemicals, or DERCOLYTE resin or Pentalyn resin produced by DRT of France, or TOPAS resin produced by Polyplastics of Japan.

[0043] In this embodiment, the weight average molecular weight of the compatibilizer is 1000 g / mol to 10000 g / mol, and it can be solid or liquid at room temperature. The preferred amount of the compatibilizer can be further defined as 5 parts by weight to 20 parts by weight.

[0044] The addition of a crosslinking agent can improve the crosslinking degree of the polyphenylene ether thermosetting resin. In the present embodiment, the crosslinking agent includes an allyl group. For example, the crosslinking agent can be triallyl cyanurate (TAC), triallyl isocyanurate (TAIC), diallyl phthalate (Diallyl Phthalate), divinylbenzene (Divinylbenzene), triallyl trimellitate (Triallyl Trimellitate) or any combination thereof. However, the present invention is not limited thereto.

[0045] The materials of the circuit substrate material may include, in addition to the resin composition, a filler, a flame retardant and a curing initiator as needed.

[0046] In this embodiment, the filler is an inorganic filler, such as but not limited to: aluminum hydroxide, aluminum oxide, magnesium hydroxide, silicon dioxide or any combination thereof. The total weight of the filler is 0.4 to 2.5 times the total weight of the resin composition. In a preferred embodiment, the total weight of the filler is 0.6 to 2.25 times the total weight of the resin composition.

[0047] In this embodiment, the flame retardant may be a phosphorus-based flame retardant or a bromine-based flame retardant.

[0048] Brominated flame retardants may be ethylenebistetrabromophthalimide, bis(pentabromophenoxy)tetrabromobenzene, decabromo diphenoxy oxide, or any combination thereof, but are not limited thereto. For example, the brominated flame retardant may be Saytex BT 93W (Ethylene Bistetrabromophthalimide) flame retardant, Saytex 120 (TetradecabromodiphenoxyBenzene) flame retardant, Saytex 8010 (Ethane-1,2-bis(pentabromophenyl)) flame retardant, or Saytex 102 (Decabromo Diphenoxy oxidd) flame retardant produced by Albemarle Corporation.

[0049] Phosphorus flame retardants may be sulphosuccinic acid esters, phosphazenes, ammonium polyphosphates, melamine polyphosphates or melamine cyanurates. Phosphates include triphenyl phosphate (TPP), tetraphenyl resorcinol bis (diphenyl phosphate), RDP, bisphenol A bis (diphenyl phosphate), BPAPP, bisphenol A bis (dimethyl) phosphate (BBC), resorcinol diphosphate (e.g. CR-733S produced by DAIHACHI), and resorcinol bis (di-2,6-dimethylphenyl phosphate) (e.g. PX-200 produced by Daihachi Chemical Co., Ltd.).

[0050] In this embodiment, the total weight of the flame retardant is 0.2 to 1.5 times the total weight of the resin composition. In a preferred embodiment, the total weight of the flame retardant is 0.3 to 1.25 times the total weight of the resin composition.

[0051] Hardening initiators can be used to accelerate the crosslinking reaction. When the hardening initiator is heated, it will decompose to form free radicals, which induce the polymerization reaction. In the present embodiment, the curing initiator is an organic peroxide, such as but not limited to: tert-butyl isopropyl peroxide, dicumyl peroxide (DCP), benzoyl peroxide (BPO), 2,5-dimethyl-2,5-di(tert-butylperoxy)hexane, 2,5-dimethyl-2,5-di(tert-butylperoxy)hexyne, 1,1-di-(tert-butylperoxy)-3,3,5-trimethylcyclohexane, and di-tert-butylperoxyisopropylbenzene.

[0052] In this embodiment, the total weight of the hardening initiator is 0.5 wt % to 1.5 wt % of the total weight of the resin composition.

[0053] The present invention further provides a prepreg substrate (Prepreg) 1, see Figure 1 As shown, the prepreg substrate 1 includes a reinforcing material 10 and a circuit substrate material 20. The circuit substrate material 20 is disposed on the reinforcing material 10. In this embodiment, the reinforcing material 10 has pores. The circuit substrate material 20 fills the pores of the reinforcing material 10 and covers the surface of the reinforcing material 10, that is, the circuit substrate material 20 is coated on the outside of the reinforcing material 10.

[0054] In this embodiment, the prepreg substrate 1 includes 10 wt % to 50 wt % of the reinforcing material 10 , 20 wt % to 50 wt % of the resin composition, 20 wt % to 50 wt % of the filler, and 10 wt % to 30 wt % of the flame retardant.

[0055] The reinforcing material 10 can be glass fiber, carbon fiber, Kevlar fiber ( Fiber), polyester fiber, quartz fiber or any combination thereof, but not limited thereto. In the present embodiment, the reinforcing material may be glass fiber. For example, the glass fiber may be electronic grade general-purpose glass fiber cloth (Electronic Glass Fabric), electronic grade ultra-thin glass fiber cloth (Electronic Glass Fabrics-Ultra Thin Cloth) or electronic grade low dielectric fiber cloth (Electronic Glass Fabrics-Low Dielectric Cloth). The reinforcing material 10 may be made of glass fiber cloth of different thicknesses or types according to different needs, for example: electronic grade general-purpose glass fiber cloth of Nan Ya Plastics Company model 7628, 1080 or 106, or electronic grade low dielectric fiber cloth of Nan Ya Plastics Company model 2116. However, the present invention is not limited thereto.

[0056] The total weight of the reinforcing material 10 may be 0.2 to 2.5 times the total weight of the resin composition.

[0057] See also Figure 2 As shown, the present invention discloses a circuit substrate 2, which includes a prepreg substrate 1 and at least one circuit layer 30. The at least one circuit layer 30 is disposed on the surface of the prepreg substrate 1, and the material of the at least one circuit layer 30 may include but is not limited to copper, aluminum, silver, or an alloy containing the above metals. In this embodiment, the circuit substrate 2 is a copper clad laminate (CCL), that is, the material of the circuit layer 30 includes copper.

[0058] In this embodiment, the circuit substrate 2 has one circuit layer 30, and the circuit layer 30 is disposed on the surface of the prepreg substrate 1. In other embodiments, the circuit substrate 2 may have two circuit layers 30, and the two circuit layers 30 are respectively disposed on two opposite surfaces of the prepreg substrate 1, such as Figure 3 shown.

[0059] In order to verify the efficacy of the present invention, the method for preparing the circuit substrate 2 will be described in detail below, and the components and proportions of the varnish in multiple embodiments and comparative examples will be listed. The circuit substrates 2 prepared in multiple embodiments and comparative examples will be tested to obtain data test results of the circuit substrates 2 in multiple embodiments and comparative examples.

[0060] The method for making the circuit substrate 2 of the present invention comprises at least the following steps: In step S1, polyphenylene ether thermosetting resin, polybutadiene thermosetting resin, compatibilizer and crosslinking agent are mixed and stirred to form a resin composition. In step S2, filler, flame retardant and curing initiator are sequentially added to the resin composition to prepare a varnish. In step S3, the reinforcing material 10 is immersed in the varnish for impregnation treatment. In this embodiment, the electronic grade low dielectric constant glass fiber cloth with model number 2116 of Nan Ya Plastics Company is used as the reinforcing material 10. In step S4, the reinforcing material 10 impregnated with varnish is semi-cured at a temperature of 130°C to form a prepreg substrate 1. In step S5, after six prepreg substrates 1 are stacked, a 1 ounce copper foil is covered on the top and bottom as the circuit layer 30, and the prepreg substrate 1 is semi-cured at a temperature of 170°C to 220°C and 20kg / cm 2 Up to 50kg / cm 2 The circuit substrate 2 was obtained by hot pressing for three hours under a pressure of 195°C and 30kg / cm 2 The hot pressing was carried out under a pressure of 426 psi.

[0061] The components of the varnishes in Examples 1 to 5 of the present invention and Comparative Examples 1 to 3 are listed in Table 1 below. The difference between Examples 1 to 5 and Comparative Examples 1 to 3 is whether the resin composition contains polyphenylene ether thermosetting resin, polybutadiene thermosetting resin and compatibilizer at the same time. Specifically, the resin composition of Comparative Example 1 does not include polybutadiene thermosetting resin and compatibilizer, the resin composition of Comparative Example 2 does not include polybutadiene thermosetting resin, and the resin composition of Comparative Example 3 does not include compatibilizer.

[0062] The components of the varnishes in Examples 6 to 13 of the present invention are listed in the following Table 2. The difference between Examples 6 to 13 is that different types of compatibilizers are used, and different amounts of polyphenylene ether thermosetting resin, compatibilizer and crosslinking agent are adjusted.

[0063] In addition, the circuit substrates of Examples 1 to 13 and Comparative Examples 1 to 3 were tested for peel strength (Peel Strength), dielectric constant (Dielectric Constant, Dk), dielectric loss factor (Dissipation Factor, Df), glass transition temperature (Glass Transition Temperature, Tg), water absorption (Water absorption), solder heat resistance (Solder Heat Resistance) and flame retardancy (Flammability). The data test results of Examples 1 to 5 and Comparative Examples 1 to 3 are listed in Table 1, and the data test results of Examples 6 to 13 are listed in Table 2.

[0064] Table 1: Compositions of the varnishes in Examples 1 to 5 and Comparative Examples 1 to 3 (expressed in parts by weight), and data test results of the circuit substrates of Examples 1 to 5 and Comparative Examples 1 to 3.

[0065]

[0066]

[0067] Table 2: Compositions of the varnishes in Examples 6 to 13 (in parts by weight), and data test results of the circuit substrates of Examples 6 to 13.

[0068]

[0069] According to the results of Table 1 and Table 2, compared with Comparative Examples 1 to 3, the circuit substrate 2 of the present invention has a lower dielectric constant and dielectric loss factor, that is, it has better electrical properties and can be used in high-frequency circuit substrates. In addition, the circuit substrate 2 of the present invention has the characteristics of high glass transition temperature, high heat resistance and low moisture absorption rate. The prepreg substrate 1 of the present invention has a low viscosity at room temperature, has the advantages of easy storage and transportation, has good fluidity in a high-temperature molten state, is suitable for automated processes, and has good pore filling properties that are beneficial to processing processes. The varnish of the present invention has the characteristics of stable solution and no precipitation.

[0070] [Beneficial Effects of Embodiments]

[0071] One of the beneficial effects of the present invention is that the circuit substrate material 20, prepreg substrate 1 and circuit substrate 2 provided by the present invention can reduce the dielectric constant and dielectric loss factor of the circuit substrate 2 through the technical solution of "the resin composition includes polyphenylene ether thermosetting resin, polybutadiene thermosetting resin and compatibilizer".

[0072] Furthermore, the present invention can improve the crosslinking density of the resin composition after curing through the technical solutions of "polyphenylene ether thermosetting resin having at least one modified group" and "crosslinking agent containing phenyl group" to provide the circuit substrate 2 with excellent high temperature resistance.

[0073] Furthermore, the present invention can improve the fluidity and filling property of the resin composition at high temperature through the technical solution of "the polybutadiene thermosetting resin has at least one alkenyl-containing side chain".

[0074] Furthermore, the present invention can increase the compatibility of polyphenylene ether thermosetting resin and polybutadiene thermosetting resin through the technical solution of "the compatibilizer has at least one alkenyl-containing side chain" to improve the stability of the varnish.

[0075] The contents disclosed above are only preferred feasible embodiments of the present invention, and are not intended to limit the protection scope of the claims of the present invention. Therefore, all equivalent technical changes made using the contents of the present invention description and drawings are included in the protection scope of the claims of the present invention.

Claims

1. A circuit substrate material, characterized in that: The circuit substrate material includes a resin composition, and the resin composition includes: 40 to 75 parts by weight of a polyphenylene ether thermosetting resin, wherein the polyphenylene ether thermosetting resin has at least one modified group, wherein the at least one modified group is selected from the group consisting of a hydroxyl group, an amine group, a vinyl group, a styrene group, a methacrylate group, and an epoxy group; 25 to 40 parts by weight of a cross-linking agent, the cross-linking agent comprising an allyl group; 5 to 40 parts by weight of a polybutadiene thermosetting resin; and 5 to 35 parts by weight of a compatibilizer, wherein the compatibilizer is any one of HIWAX resin, TOPAS resin and FTR resin.

2. The circuit substrate material according to claim 1, characterized in that: The opposite ends of the polyphenylene ether thermosetting resin have the same modified group.

3. The circuit substrate material according to claim 1, characterized in that: The crosslinking agent includes triallyl cyanurate, triallyl isocyanurate, diallyl phthalate, divinylbenzene, triallyl trimellitate or any combination thereof.

4. The circuit substrate material according to claim 1, characterized in that: The polybutadiene thermosetting resin has at least one side chain containing alkenyl groups, and the content of alkenyl groups in the polybutadiene thermosetting resin is greater than or equal to 20 wt %.

5. The circuit substrate material according to claim 4, characterized in that: The carbon number of the alkenyl-containing side chain in the polybutadiene thermosetting resin is 2 to 10.

6. The circuit substrate material according to claim 4, characterized in that: The alkenyl-containing side chain in the polybutadiene thermosetting resin is selected from the group consisting of vinyl, acrylic, styrene and any combination thereof.

7. The circuit substrate material according to claim 1, characterized in that: The compatibilizer is HIWAX resin.

8. The circuit substrate material according to claim 1, characterized in that: The compatibilizer has at least one alkenyl-containing side chain, and the alkenyl-containing side chain of the compatibilizer has 2 to 10 carbon atoms.

9. The circuit substrate material according to claim 8, characterized in that: The alkenyl-containing side chain in the compatibilizer is selected from the group consisting of vinyl, acrylic, styrene and any combination thereof.

10. The circuit substrate material according to claim 1, characterized in that: The compatibilizer does not contain hydroxyl groups.

11. The circuit substrate material according to claim 1, characterized in that: The circuit substrate material further includes a filler, and the total weight of the filler is 0.4 to 2.5 times the total weight of the resin composition.

12. The circuit substrate material according to claim 11, characterized in that: The inorganic filler is selected from the group consisting of aluminum hydroxide, aluminum oxide, magnesium hydroxide, silicon dioxide and any combination thereof.

13. The circuit substrate material according to claim 1, characterized in that: The circuit substrate material further includes a flame retardant, and the total weight of the flame retardant is 0.2 to 1.5 times the total weight of the resin composition.

14. A prepreg substrate, characterized in that The prepreg substrate comprises: - reinforcement material; and A circuit substrate material, the circuit substrate material is disposed on the reinforcing material, the circuit substrate material comprises a resin composition, and the resin composition comprises: 40 to 75 parts by weight of a polyphenylene ether thermosetting resin, wherein the polyphenylene ether thermosetting resin has at least one modified group at its end, and the at least one modified group is selected from the group consisting of a hydroxyl group, an amine group, a vinyl group, a styrene group, a methacrylate group, and an epoxy group; 25 to 40 parts by weight of a cross-linking agent, the cross-linking agent comprising an allyl group; 5 to 40 parts by weight of a polybutadiene thermosetting resin; and 5 to 35 parts by weight of a compatibilizer, wherein the compatibilizer is any one of HIWAX resin, TOPAS resin and FTR resin.

15. The prepreg base material according to claim 14, characterized in that The reinforcing material has pores, and the reinforcing material is selected from: glass fiber, carbon fiber, Kevlar fiber, polyester fiber, quartz fiber or any combination thereof; wherein the circuit substrate material fills the pores of the reinforcing material or covers the surface of the reinforcing material.

16. A circuit substrate, characterized in that: The circuit substrate comprises: A prepreg substrate, the prepreg substrate includes a reinforcing material and a circuit substrate material, the circuit substrate material is disposed on the reinforcing material, the circuit substrate material includes a resin composition, and the resin composition material includes: 40 to 75 parts by weight of a polyphenylene ether thermosetting resin, wherein the polyphenylene ether thermosetting resin has at least one modified group at its end, and the at least one modified group is selected from the group consisting of a hydroxyl group, an amine group, a vinyl group, a styrene group, a methacrylate group, and an epoxy group; 25 to 40 parts by weight of a cross-linking agent, the cross-linking agent comprising an allyl group; 5 to 40 parts by weight of a polybutadiene thermosetting resin; and 5 to 35 parts by weight of a compatibilizer, wherein the compatibilizer is any one of HIWAX resin, TOPAS resin and FTR resin; and At least one circuit layer is disposed on the surface of the prepreg substrate.

Images