A packaging structure manufacturing method based on vertical wafer and packaging structure

Abstract

The present invention discloses a method for manufacturing a packaging structure based on a vertical chip and a packaging structure, the packaging structure manufacturing method comprising the following steps: S1, prefabricating a plurality of independent metal areas on the upper surface of an LED substrate; S2, fixing vertical chips with opposite electrode polarities on the upper surface of the metal area; S3, connecting the vertical chips on adjacent metal areas with gold wires; S4, laying a first packaging layer around the vertical chip; S5, laying a second packaging layer above the vertical chip, the gold wire and the first packaging layer. The present invention can realize the series connection of vertical chips, achieve the purpose of "high voltage", avoid the gold wire connection between the chip and the substrate, avoid contaminating the chip, and achieve the effect of high density and high brightness.

Description

Technical Field

[0001] The invention belongs to the technical field of LEDs, and in particular relates to a manufacturing method based on a vertical chip packaging structure and a packaging structure. Background Art

[0002] With the development of semiconductor technology for lighting, there are currently three main structures of LED chips: face-up, flip-chip and vertical structure. Vertical structure chips have natural advantages in terms of uniform light output and heat dissipation at small pitches. In addition, most common red light chips are vertical structures. In order to meet the market's increasing requirements for LED colors and specifications, a reasonably designed packaging structure based on special chips is particularly important.

[0003] In the prior art, vertical chip-based packaging is mainly a single vertical chip packaging, and the series connection between chips is achieved by the series connection between single finished lamp beads, which easily leads to insufficient light density per unit area; low-voltage LED light sources have inherent disadvantages, including short life of the driving power supply, inability to work under large currents, etc. Generally, small LED chips operate in an environment of 20-30mA, 3V, and the operating environment of a single power chip is 350mA, 3V; lamp bead integration, due to the large spacing between the light-emitting points, easily leads to uneven light distribution of the finished product, and different areas cannot achieve good light intensity consistency; in LED packaging, when using high-reflectivity white resin to brighten the product, it is easy for the white resin to spread from the LED bracket along the gold wire to the chip surface, contaminating the chip. Summary of the invention

[0004] In order to overcome the above technical defects, the first aspect of the present invention provides a method for manufacturing a packaging structure based on a vertical chip, which can realize the series connection of vertical chips to achieve the effect of high density and high brightness.

[0005] In order to solve the above problems, the present invention is implemented according to the following technical solutions:

[0006] A method for manufacturing a packaging structure based on a vertical wafer comprises the following steps:

[0007] S1. Prefabricate several independent metal areas on the upper surface of the LED substrate;

[0008] S2, fixing a vertical wafer with electrodes of opposite polarities on the upper surface of the metal region;

[0009] S3, connecting the vertical chips on the adjacent metal areas with gold wires;

[0010] S4, laying a first packaging layer around the vertical wafer;

[0011] S5. Laying a second packaging layer on the vertical chip, the gold wire and the first packaging layer.

[0012] Furthermore, in step S2, the vertical chip includes a first vertical chip and a second vertical chip with opposite electrode polarities, and the first vertical chip and the second vertical chip are fixed on the same metal area in a ratio of 1:1.

[0013] Furthermore, in the step S2, a conductive adhesive layer is applied on the surface of the metal area by using a fully automatic die bonding machine, and the vertical wafer is fixed to the upper surface of the metal area through the conductive adhesive layer.

[0014] The second aspect of the present invention further discloses a packaging structure based on a vertical chip, which is manufactured by any of the above-mentioned packaging structure manufacturing methods, and includes: an LED substrate, a plurality of vertical chips;

[0015] The LED substrate includes several independent metal areas, and the upper surface of the metal area is provided with a vertical chip with upper and lower electrodes with opposite polarities. The vertical chips on the same metal area are connected through the metal area below, and the vertical chips on adjacent metal areas are connected through gold wires. The gold wires are located above the vertical chips and are not in direct contact with the LED substrate.

[0016] Furthermore, the vertical chip includes a first vertical chip and a second vertical chip, and the polarities of upper and lower electrodes of the first vertical chip and the second vertical chip are opposite.

[0017] Furthermore, the metal area includes a pair of positive metal area and negative metal area connected to the external power supply and a plurality of independent metal areas not connected to the external power supply;

[0018] The first vertical chip and the second vertical chip are provided on the upper surface of the independent metal area, the first vertical chip and the second vertical chip on the same independent metal area are connected through the upper surface of the independent metal area in contact with the lower electrode, and the first vertical chip and the second vertical chip of two adjacent independent metal areas are connected through the gold wire;

[0019] The first vertical chip is provided on the upper surface of the positive metal area and is connected to the second vertical chip of the adjacent independent metal area through the gold wire;

[0020] The second vertical chip is disposed on the upper surface of the negative electrode metal area and is connected to the first vertical chip of the adjacent independent metal area through the gold wire.

[0021] Furthermore, it also includes a conductive adhesive layer, and the vertical chip is fixed to the upper surface of the metal area through the conductive adhesive layer.

[0022] Furthermore, it also includes a first packaging layer and a second packaging layer, the first packaging layer fills the vertical chip gap, the thickness of the first packaging layer is equal to the height of the vertical chip, or is lower than the height of the vertical chip, and the first packaging layer does not directly contact the gold wire; the second packaging layer covers the first packaging layer, the vertical chip and the gold wire.

[0023] Furthermore, a light conversion layer is provided, and the light conversion layer is laid on the first packaging layer, the vertical chip and the gold wire, and the second packaging layer is laid on the light conversion layer.

[0024] Compared with the prior art, the present invention has the following beneficial effects:

[0025] The vertical chips are connected in series to achieve the purpose of "high voltage". The gold wire only connects the chips to each other, avoiding the gold wire connection between the chip and the substrate, reducing the wire bonding distance, shortening the chip spacing, and avoiding the white resin from contaminating the chip along the gold wire, achieving the effect of high density and high brightness. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The specific embodiments of the present invention are further described in detail below in conjunction with the accompanying drawings, wherein:

[0027] Figure 1 This is a schematic structural diagram of a vertical wafer-based packaging structure described in Example 2;

[0028] Figure 2 This is a connection diagram of the vertical chip-based packaging structure described in Example 2;

[0029] Marking description: 1. LED substrate; 2. First vertical chip; 3. Second vertical chip; 4. Positive metal area; 5. Negative metal area; 6. Independent metal area; 7. Gold wire; 8. First packaging layer; 9. Light conversion layer; 10. Second packaging layer. DETAILED DESCRIPTION

[0030] The preferred embodiments of the present invention are described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described herein are only used to illustrate and explain the present invention, and are not used to limit the present invention.

[0031] Example 1

[0032] This embodiment discloses a method for manufacturing a packaging structure based on a vertical wafer, comprising the following steps:

[0033] S1. Prefabricate several independent metal areas on the upper surface of the LED substrate;

[0034] S2. Use a fully automatic crystal bonding machine to place a conductive bonding layer on the upper surface of the metal area, and fix the vertical wafer with opposite electrode polarities on the metal area through the conductive bonding layer;

[0035] S3, connecting the vertical chips on the adjacent metal regions with gold wires;

[0036] S4, using a dispensing machine to lay the first packaging layer around the vertical wafer;

[0037] S5. Use a dispensing machine to lay the second packaging layer on the vertical chip, gold wire and the first packaging layer.

[0038] Specifically, in step S2, the vertical wafer includes a first vertical wafer and a second vertical wafer having opposite electrode polarities, and the first vertical wafer and the second vertical wafer are fixed on the same metal area in a ratio of 1:1.

[0039] Specifically, in step S3, a fully automatic wire bonding machine is used to connect vertical chips on adjacent metal areas with gold wires. Due to the special arrangement, the gold wires do not need to be directly bonded to the substrate, and there is no need to reserve more bonding positions for the porcelain nozzle of the fully automatic wire bonding machine, which effectively shortens the distance between chips and realizes high-density arrangement of chips to achieve a high-brightness effect. Since the gold wires are located above the chips, they avoid contact with the first packaging layer, effectively preventing white resin from spreading along the gold wires from the substrate to the top of the chip and contaminating the chip.

[0040] Example 2

[0041] like Figure 1 , Figure 2 This embodiment discloses a packaging structure of a vertical chip, which is manufactured by the packaging structure manufacturing method described in Example 1, and includes an LED substrate 1 and a plurality of vertical chips. The vertical chips include a first vertical chip 2 and a second vertical chip 3. The polarities of upper and lower electrodes of the first vertical chip 2 and the second vertical chip 3 are opposite.

[0042] The LED substrate 1 is provided with a pair of positive metal areas 4, a negative metal area 5 and a plurality of independent metal areas 6 which are not connected to the external power supply, and the metal areas are not connected to each other; a first vertical chip 2 and a second vertical chip 3 are provided on the upper surface of the independent metal area 6 at the same time, the first vertical chip 2 and the second vertical chip 3 on the same independent metal area 6 are connected through the upper surface of the independent metal area 6 which is in contact with the lower electrode, and the first vertical chip 2 and the second vertical chip 3 of two adjacent independent metal areas 6 are connected through a gold wire 7, and the gold wire 7 is always located above the first vertical chip 2 and the second vertical chip 3, and is not in direct contact with the LED substrate 1; a first vertical chip 2 is provided on the upper surface of the positive metal area 4, and is connected to the second vertical chip 3 of the adjacent independent metal area 6 through a gold wire; a second vertical chip 3 is provided on the upper surface of the negative metal area 5, and is connected to the first vertical chip 2 of the adjacent independent metal area 6 through a gold wire.

[0043] The first vertical chips 2 and the second vertical chips 3 on the upper surfaces of several independent metal areas 6 are connected in sequence, and the first and last vertical chips are respectively connected to the first vertical chip 2 of the positive metal area 4 and the second vertical chip 3 of the negative metal area 5 to form a complete series circuit.

[0044] Specifically, it also includes a conductive adhesive layer (not shown in the figure), and the first vertical chip 2 and the second vertical chip 3 are fixed on the upper surface of the metal area through the conductive adhesive layer.

[0045] In the above embodiment, it also includes a first packaging layer 8 and a second packaging layer 10. The first packaging layer 8 is a white resin with high reflectivity, and the second packaging layer 10 is a transparent silicone material. The first packaging layer 8 fills the gaps between the vertical chips and the gaps between the vertical chips and the LED substrate 1, and does not directly contact the gold wire 7. The thickness of the first packaging layer 8 is equal to the height of the vertical chip, or lower than the height of the vertical chip. The second packaging layer 10 covers the first packaging layer 8, the vertical chip and the gold wire 7.

[0046] In the above embodiment, a light conversion layer 9 is also included. The light conversion layer 9 is laid on the vertical chip, the gold wire 7 and the first packaging layer 8, and the second packaging layer 10 is laid on the light conversion layer 9. By adding fluorescent powder to the light conversion layer 9, different light effects can be obtained.

[0047] In the above embodiment, by designing the installation method of the substrate and the chip, the vertical chip is connected in series to achieve the purpose of "high voltage"; the type of gold wire bonding only includes the connection between chips, avoiding the gold wire bonding between the chip and the substrate, reducing the wire bonding distance, avoiding the white resin from spreading along the gold wire to the chip surface and contaminating the chip, and achieving a high-density and high-brightness light output effect.

[0048] The above description is only a preferred embodiment of the present invention and does not limit the present invention in any form. Therefore, any modification, equivalent change and modification made to the above embodiment based on the technical essence of the present invention without departing from the technical solution of the present invention shall still fall within the scope of the technical solution of the present invention.

Claims

1. A method for manufacturing a packaging structure based on a vertical wafer, characterized in that: The steps include: S1. Prefabricate several independent metal areas on the upper surface of the LED substrate; S2, fixing a vertical wafer with electrodes of opposite polarities on the upper surface of the metal region; S3, connecting the vertical chips on the adjacent metal areas with gold wires, wherein the gold wires are located above the vertical chips and are not in direct contact with the LED substrate; S4, laying a first packaging layer around the vertical wafer, wherein the first packaging layer does not directly contact the gold wire; S5. Laying a second packaging layer on the vertical chip, the gold wire and the first packaging layer.

2. The packaging structure manufacturing method according to claim 1, in the step S2, the vertical chip includes a first vertical chip and a second vertical chip with opposite electrode polarities, and the number of the first vertical chip and the second vertical chip is fixed on the same metal area in a ratio of 1:

1.

3. The method for manufacturing a packaging structure according to claim 1, in the step S2, a conductive adhesive layer is applied on the surface of the metal area by using a fully automatic die bonding machine, and the vertical chip is fixed to the upper surface of the metal area through the conductive adhesive layer.

4. A packaging structure based on a vertical chip, characterized in that: The packaging structure is manufactured by the method for manufacturing the packaging structure according to any one of claims 1 to 3, comprising: an LED substrate, a plurality of vertical chips; The LED substrate includes several independent metal areas, and the upper surface of the metal area is provided with a vertical chip with upper and lower electrodes with opposite polarities. The vertical chips on the same metal area are connected through the metal area below, and the vertical chips on adjacent metal areas are connected through gold wires. The gold wires are located above the vertical chips and are not in direct contact with the LED substrate.

5. The packaging structure according to claim 4, characterized in that: The vertical chip includes a first vertical chip and a second vertical chip, and the polarities of upper and lower electrodes of the first vertical chip and the second vertical chip are opposite.

6. The packaging structure according to claim 5, characterized in that: The metal area includes a pair of positive metal area and negative metal area connected to the external power supply and a plurality of independent metal areas not connected to the external power supply; The first vertical chip and the second vertical chip are provided on the upper surface of the independent metal area, the first vertical chip and the second vertical chip on the same independent metal area are connected through the upper surface of the independent metal area in contact with the lower electrode, and the first vertical chip and the second vertical chip of two adjacent independent metal areas are connected through the gold wire; The first vertical chip is provided on the upper surface of the positive metal area and is connected to the second vertical chip of the adjacent independent metal area through the gold wire; The second vertical chip is disposed on the upper surface of the negative electrode metal area and is connected to the first vertical chip of the adjacent independent metal area through the gold wire.

7. The packaging structure according to claim 4, characterized in that: It also includes a conductive adhesive layer, and the vertical chip is fixed to the upper surface of the metal area through the conductive adhesive layer.

8. The packaging structure according to claim 4, characterized in that: It also includes a first packaging layer and a second packaging layer, the first packaging layer fills the vertical chip gap, the thickness of the first packaging layer is equal to the height of the vertical chip, or is lower than the height of the vertical chip, and the first packaging layer does not directly contact the gold wire; the second packaging layer covers the first packaging layer, the vertical chip and the gold wire.

9. The packaging structure according to claim 8, characterized in that: It also includes a light conversion layer, which is laid on the vertical chip, the gold wire and the first packaging layer, and the second packaging layer is laid on the light conversion layer.

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