A semiconductor component

Abstract

The present invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a semiconductor element, which comprises, from bottom to top, a substrate, a first conductive semiconductor, a multi-quantum well, an electron blocking layer, and a second conductive semiconductor. The present invention regulates the C and O concentrations of the second conductive semiconductor and the electron blocking layer by controlling the pressure, temperature, MO source, flow rate, and ratio of N2 / H2 / NH3 during the stacking process, so that the C and O concentrations of the second conductive semiconductor and the electron blocking layer gradually decrease, and the C and O concentrations of the electron blocking layer are lower than those of the second conductive semiconductor, and the two form a C and O concentration gradient decreasing trend toward the multi-quantum well direction; a hole acceleration potential field is formed toward the multi-quantum well direction, the hole transport capacity and the hole injection efficiency into the multi-quantum well are improved, thereby improving the radiation recombination efficiency of the semiconductor light-emitting element.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a semiconductor element. Background Art

[0002] Semiconductor components, especially semiconductor light-emitting components, have a wide range of adjustable wavelengths, high luminous efficiency, energy saving and environmental protection, long life of more than 100,000 hours, small size, strong designability, etc., and have gradually replaced incandescent lamps and fluorescent lamps, and have become the light source for ordinary household lighting, and are widely used in new scenarios, such as indoor high-resolution display screens, outdoor display screens, mobile TV backlighting, street lights, car lights, flashlights and other application fields. However, traditional nitride semiconductors are grown on sapphire substrates, with large lattice mismatch and thermal mismatch, resulting in high defect density and polarization effect, reducing the luminous efficiency of semiconductor light-emitting components; at the same time, the hole ionization efficiency of traditional nitride semiconductors is much lower than the electron ionization efficiency, resulting in a hole concentration that is more than one order of magnitude lower than the electron concentration. Excess electrons will overflow from the multi-quantum well to the second conductive semiconductor to produce non-radiative recombination. The low hole ionization efficiency will make it difficult for the holes of the second conductive semiconductor to be effectively injected into the multi-quantum well, and the hole injection efficiency into the multi-quantum well is low, resulting in low luminous efficiency of the multi-quantum well. Summary of the invention

[0003] In order to solve the above technical problems, the present invention provides a semiconductor element, wherein the C and O concentrations of the second conductive semiconductor and the electron blocking layer decrease gradually, and the C and O concentrations of the electron blocking layer are lower than the C and O concentrations of the second conductive semiconductor, and the two form a C and O concentration gradient decreasing trend toward the multi-quantum well direction; a hole acceleration potential field is formed toward the multi-quantum well direction, thereby improving the hole transport capacity and the efficiency of hole injection into the multi-quantum well.

[0004] To achieve the above object, the present invention is implemented by adopting the following technical solutions:

[0005] The present invention provides a semiconductor element, which comprises, from bottom to top, a substrate, a first conductive semiconductor, a multi-quantum well, an electron blocking layer and a second conductive semiconductor, wherein the C and O concentrations of the second conductive semiconductor and the electron blocking layer decrease gradually, and the C and O concentrations of the electron blocking layer are lower than those of the second conductive semiconductor, and the two form a C and O concentration gradient decreasing trend toward the multi-quantum well.

[0006] In the above technical solution, the C concentration of the second conductive semiconductor is 5E19cm -3 To 1E17cm -3 The O concentration gradually decreases between 5E19cm -3 To 5E16cm -3The C concentration of the electron blocking layer is 5E18cm -3 To 1E16cm -3 The O concentration gradually decreases between 1E18cm -3 To 1E16cm -3 Gradually decreasing.

[0007] In the above technical solution, the second conductive semiconductor and the electron blocking layer form a C and O concentration gradient decreasing trend toward the multi-quantum well direction, and the average C and O concentrations of the electron blocking layer are at least 1 times lower than the average C and O concentrations of the second conductive semiconductor, thereby forming a hole acceleration potential field toward the multi-quantum well direction, thereby improving the hole transport capacity and the efficiency of hole injection into the multi-quantum well.

[0008] In the above technical solution, the C and O concentrations on the upper surface of the second conductive semiconductor are greater than 5E18cm -3 , a higher upper surface C and O concentration can reduce the interface resistance and hole transport capacity between the second conductive semiconductor and the metal electrode, and achieve good ohmic contact characteristics.

[0009] In the above technical solution, the C and O concentrations at the interface between the electron blocking layer and the multi-quantum well are less than 1E18cm -3 , reduce the negative effects of C and O atoms on the production of non-radiative recombination centers and deep energy level impurities in multiple quantum wells, and reduce the reverse leakage current of multiple quantum wells.

[0010] In the above technical solution, the C concentration of the electron blocking layer is less than 5E18cm -3 , O concentration is less than 1E18cm -3 , lower C and O concentrations can reduce the acceptor compensation effect of C and O and enhance the hole ionization effect of the electron blocking layer.

[0011] In the above technical solution, the Mg doping concentration of the second conductive type semiconductor is greater than 1E18cm -3 The Mg doping concentration of the electron blocking layer is greater than 1E18cm -3 .

[0012] In the above technical solution, the Si doping concentration of the first conductive semiconductor is greater than 1E17cm -3 .

[0013] In the above technical scheme, the first conductive semiconductor, multiple quantum well, electron blocking layer, and second conductive semiconductor include any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

[0014] In the above technical scheme, the substrate includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0015] Compared with the prior art, the beneficial effect of the present invention is that the present invention regulates the C and O concentrations of the second conductive semiconductor and the electron blocking layer by controlling the pressure, temperature, MO source, flow rate and ratio of N2 / H2 / NH3 during the stacking process, so that the C and O concentrations of the second conductive semiconductor and the electron blocking layer gradually decrease, and the C and O concentrations of the electron blocking layer are lower than the C and O concentrations of the second conductive semiconductor, and the two form a C and O concentration gradient downward trend toward the multi-quantum well direction, forming a hole acceleration potential field toward the multi-quantum well direction, thereby improving the hole transport capacity and the hole injection efficiency of the multi-quantum well, and due to the improvement of the hole expansion ability, the luminescence uniformity is improved, thereby improving the radiation recombination efficiency of the semiconductor light-emitting element. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 is a schematic structural diagram of a semiconductor element according to an embodiment of the present invention;

[0017] Figure 2 is a SIMS secondary ion mass spectrum of a blue-green semiconductor light emitting element according to an embodiment of the present invention;

[0018] Figure 3 is a SIMS secondary ion mass spectrum of a deep ultraviolet semiconductor light-emitting element according to an embodiment of the present invention;

[0019] Reference numerals: 100: substrate; 101: first conductivity type semiconductor; 102: multiple quantum well; 103: electron blocking layer; 104: second conductivity type semiconductor. DETAILED DESCRIPTION

[0020] The specific implementation of the present invention is further described in detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0021] like Figure 1 As shown, a semiconductor element of an embodiment of the present invention includes, from bottom to top, a substrate 100, a first conductive semiconductor 101, a multi-quantum well 102, an electron blocking layer 103, and a second conductive semiconductor 104. The substrate 100 is a substrate on which nitride semiconductor crystals can be epitaxially grown, and a substrate having a high transmittance (for example, the transmittance of the light is above 50%) for the wavelength range of light emitted by the semiconductor light-emitting element can be selected and used; the first conductive semiconductor 101 and the second conductive semiconductor 104 can be an n-type semiconductor layer, the conductivity type is n-type; or a p-type semiconductor layer, the conductivity type is p-type; the first conductive semiconductor 101, the multi-quantum well 102, the electron blocking layer 103, and the second conductive semiconductor 104 are sequentially stacked on the substrate 100, and the stacked semiconductor layers are deposited by an organic metal chemical vapor deposition method ( The multi-quantum well 102 is composed of a stacked structure formed by alternating well layers and barrier layers; the electron blocking layer 103 can effectively prevent the electrons generated by the N-type semiconductor layer from entering the P-type semiconductor layer, thereby avoiding the non-radiative recombination of electrons and holes in the P-type semiconductor layer, thereby avoiding the reduction of hole concentration due to electron transition, and improving the luminous efficiency of the light-emitting diode; wherein the C and O concentrations of the second conductive semiconductor 104 and the electron blocking layer 103 decrease gradually, and the C and O concentrations of the electron blocking layer 103 are lower than those of the second conductive semiconductor 104, and the two form a C and O concentration gradient decrease trend toward the multi-quantum well 102.

[0022] Traditional nitride semiconductors are grown on sapphire substrates, which have large lattice mismatch and thermal mismatch, resulting in high defect density and polarization effect, reducing the luminous efficiency of semiconductor light-emitting elements; at the same time, the hole ionization efficiency of traditional nitride semiconductors is much lower than the electron ionization efficiency, resulting in a hole concentration that is more than one order of magnitude lower than the electron concentration. Excess electrons will overflow from the multi-quantum wells to the second conductive semiconductor to produce non-radiative recombination. The low hole ionization efficiency will make it difficult for the holes of the second conductive semiconductor to be effectively injected into the multi-quantum wells, and the efficiency of hole injection into the multi-quantum wells is low, resulting in low luminous efficiency of the multi-quantum wells. The present invention controls the pressure of N2 / H2 / NH3 during the stacking process. , temperature, MO source, flow rate and ratio, etc., to control the C and O concentrations of the second conductive semiconductor 104 and the electron blocking layer 103, so that the C and O concentrations of the second conductive semiconductor 104 and the electron blocking layer 103 decrease gradually, and the C and O concentrations of the electron blocking layer 103 are lower than those of the second conductive semiconductor 104, and the two form a C and O concentration gradient downward trend toward the multi-quantum well 102, forming a hole acceleration potential field toward the multi-quantum well, improving the hole transport capacity and the hole injection efficiency of the multi-quantum well, and improving the uniformity of light emission due to the improvement of the hole expansion capacity, thereby improving the radiation recombination efficiency of the semiconductor light-emitting element. The technical solution of the present invention can be applied to semiconductor light-emitting elements outside various bands including but not limited to blue-green light, deep ultraviolet, etc., such as Figure 2 , Figure 3 Shown are the SIMS secondary ion mass spectra of blue-green light and deep ultraviolet semiconductor light-emitting elements, respectively.

[0023] As an improvement of the above technical solution, the C concentration of the second conductive semiconductor 104 is 5E19cm -3 To 1E17cm -3 The O concentration gradually decreases between 5E19cm -3 To 5E16cm -3 The C concentration of the electron blocking layer 103 is 5E18cm -3 To 1E16cm -3 The O concentration gradually decreases between 1E18cm -3 To 1E16cm -3 The C concentration of the electron blocking layer is less than 5E18cm -3 , O concentration is less than 1E18cm -3 , lower C and O concentrations can reduce the acceptor compensation effect of C and O and enhance the hole ionization effect of the electron blocking layer.

[0024] Preferably, the second conductive semiconductor 104 and the electron blocking layer 103 form a C and O concentration gradient decreasing trend toward the multi-quantum well 102, and the average C and O concentrations of the electron blocking layer 103 are at least 1 times lower than the average C and O concentrations of the second conductive semiconductor 104, thereby forming a hole acceleration potential field toward the multi-quantum well 102, thereby improving the hole transport capacity and the efficiency of hole injection into the multi-quantum well.

[0025] Furthermore, the C and O concentrations on the upper surface of the second conductive semiconductor 104 are greater than 5E18 cm -3 , a higher upper surface C and O concentration can reduce the interface resistance and hole transport capacity between the second conductive semiconductor and the metal electrode, and achieve good ohmic contact characteristics.

[0026] As an improvement of the above technical solution, the C and O concentrations at the interface between the electron blocking layer 103 and the multi-quantum well 102 are less than 1E18 cm -3 , reducing the negative effects of C and O atoms on the multi-quantum well 102 in generating non-radiative recombination centers and deep energy level impurities, and reducing the reverse leakage current of the multi-quantum well.

[0027] As an improvement of the above technical solution, the Mg doping concentration of the second conductive semiconductor 104 is greater than 1E18 cm -3 The Mg doping concentration of the electron blocking layer 103 is greater than 1E18 cm -3 By controlling the C / O concentration of the second conductive semiconductor and matching it with the Mg doping concentration, the hole ionization efficiency and Mg solubility can be improved, the lateral growth rate can be increased to make the surface of the second conductive semiconductor grow smoothly, and the lateral expansion ability and ESD resistance of holes can be improved.

[0028] As an improvement of the above technical solution, the Si doping concentration of the first conductive semiconductor 101 is greater than 1E17 cm -3 As Si raw material, monosilane (SiH4) or disilane (Si2H6) can be used.

[0029] In the present invention, the first conductive semiconductor 101, the multiple quantum well 102, the electron blocking layer 103, and the second conductive semiconductor 104 include any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

[0030] The substrate includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, IP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0031] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A semiconductor element, characterized in that: The substrate includes a first conductive semiconductor, a multi-quantum well, an electron blocking layer, and a second conductive semiconductor from bottom to top. The C and O concentrations of the second conductive semiconductor and the electron blocking layer decrease gradually, and the C and O concentrations of the electron blocking layer are lower than those of the second conductive semiconductor. The two form a C and O concentration gradient decrease trend toward the multi-quantum well. The C concentration of the second conductive semiconductor is 5E19cm -3 To 1E17cm -3 The O concentration gradually decreases between 5E19cm -3 To 5E16cm -3 The C concentration of the electron blocking layer is 5E18cm -3 To 1E16cm -3 The O concentration gradually decreases between 1E18cm -3 To 1E16cm -3 The second conductive semiconductor and the electron blocking layer form a C and O concentration gradient downward trend toward the multi-quantum well, and the average C and O concentrations of the electron blocking layer are at least 1 times lower than the average C and O concentrations of the second conductive semiconductor, thereby forming a hole acceleration potential field toward the multi-quantum well, thereby improving the hole transport capacity and the efficiency of hole injection into the multi-quantum well.

2. A semiconductor device as claimed in claim 1, characterized in that: The C and O concentrations on the upper surface of the second conductive semiconductor are greater than 5E18 cm -3 , reducing the interface resistance and hole transport capacity between the second conductive semiconductor and the metal electrode, and achieving good ohmic contact characteristics.

3. A semiconductor device as claimed in claim 1, characterized in that: The C and O concentrations at the interface between the electron blocking layer and the multi-quantum well are less than 1E18 cm -3 , reduce the negative effects of C and O atoms on the production of non-radiative recombination centers and deep energy level impurities in multiple quantum wells, and reduce the reverse leakage current of multiple quantum wells.

4. A semiconductor device as claimed in claim 1, characterized in that: The C concentration of the electron blocking layer is less than 5E18cm -3 , O concentration is less than 1E18cm -3 .

5. A semiconductor device as claimed in claim 1, characterized in that: The Mg doping concentration of the second conductive semiconductor is greater than 1E18 cm -3 The Mg doping concentration of the electron blocking layer is greater than 1E18cm -3 .

6. A semiconductor device as claimed in claim 1, characterized in that: The Si doping concentration of the first conductive semiconductor is greater than 1E17 cm -3 .

7. A semiconductor device as claimed in claim 1, characterized in that: The first conductive semiconductor, multiple quantum well, electron blocking layer, and second conductive semiconductor include any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, and InGaP.

8. A semiconductor device as claimed in claim 1, characterized in that: The substrate includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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