Method for making microgrid detector

Abstract

The present application discloses a method for manufacturing a microgrid detector, including: preparing a readout anode plate and a metal microgrid; applying liquid photoresist to a preset thickness on the readout anode plate to form a photoresist layer; covering the metal microgrid on the photoresist layer and etching to form an insulating pillar; making a drift electrode on the readout anode plate to complete the manufacture of the microgrid detector. In the above-mentioned method for manufacturing a microgrid detector, liquid photoresist is applied to a preset thickness, which avoids the situation where the yield is insufficient due to multiple superposition of solid photoresist, thereby improving the quality and yield of the microgrid detector. By etching the photoresist layer to form an insulating pillar, batch production can be carried out through photolithography equipment, thereby improving production efficiency and realizing batch production.

Description

Technical Field

[0001] The present application relates to the field of microstructure gas detectors, and in particular, to a method for manufacturing a microgrid detector. Background Art

[0002] With the continuous increase in particle energy and brightness in large collider experiments, higher requirements are placed on the counting ability, radiation resistance, spatial and temporal resolution of each detector in the detection spectrometer. Traditional multi-wire chambers and proportional tubes have been difficult to meet these requirements. The emergence of microstructured gas detectors provides a good solution. It has many excellent characteristics such as high counting rate, radiation resistance, high-precision position sensitivity, etc., so it quickly became one of the important research directions of gas detectors. Three electrodes divide the detector into a drift region and an avalanche amplification region. Charged particles or photons directly ionize in the drift region or produce atomic ionization molecules by photoelectric effect to produce electron-ion pairs. These ionized electrons drift under the action of the drift electric field and enter the avalanche amplification region through the metal wire mesh. The ionized electrons in the avalanche amplification region produce cascade multiplication, thereby generating enough observable charge signals.

[0003] Microstructure gas detectors have become a hot topic in international gas detector research. They have found new uses in high-energy physics experiments and are widely used in many fields such as high-energy physics, nuclear detection and national economy. For example, diffraction experiments on synchrotron radiation devices, thermal neutron imaging, X-ray imaging, muon imaging, etc. The key point of microstructure gas detectors lies in the avalanche zone support structure.

[0004] However, the supporting structure of the microstructure gas detector usually has two manufacturing processes. One is to use solid photoresist through ultraviolet light irradiation and chemical etching. Since the thickness of the solid photoresist in this manufacturing process is relatively small, multiple layers need to be stacked to achieve the thickness required by the microstructure gas detector, which makes the manufacturing process complicated, affects the manufacturing quality, and has a low yield. The second is to use hot melt adhesive film hot pressing method for manufacturing, which has low production efficiency and is difficult to quickly mass produce. Summary of the invention

[0005] The purpose of the embodiments of the present application is to provide a method for manufacturing a microgrid detector to solve the problems of low manufacturing efficiency and insufficient yield in the existing microgrid detector manufacturing process.

[0006] In order to solve the above problems, the present application adopts the following technical solutions:

[0007] The present invention provides a method for manufacturing a microgrid detector, including:

[0008] Prepare the readout anode plate and metal micromesh;

[0009] Applying liquid photoresist to a preset thickness on the readout anode plate to form a photoresist layer;

[0010] Covering the metal micro-mesh on the photoresist layer, and etching to form an insulating pillar;

[0011] A drift electrode is fabricated on the readout anode plate to complete the fabrication of the microgrid detector.

[0012] Furthermore, the step of covering the metal micro-mesh on the photoresist layer and etching to form an insulating pillar specifically includes:

[0013] Covering the metal micro-mesh on the photoresist layer;

[0014] Covering the photoresist layer with a mask plate, exposing and etching to form a hollow pillar;

[0015] Insulating glue is poured into the hollow pillar to form the insulating pillar.

[0016] Further, the liquid photoresist is a negative photoresist, and the mask plate is provided with an annular through hole, and the annular through hole is used to form the cylindrical hollow pillar after exposure and etching; or, the liquid photoresist is a positive photoresist, and the mask plate is provided with an annular cover portion, and the annular cover portion is used to form the cylindrical hollow pillar after exposure and etching.

[0017] Furthermore, there are multiple annular through holes, and the multiple annular through holes are arranged in rows.

[0018] Furthermore, there are multiple circular ring covering parts, and the multiple circular ring covering parts are arranged in a row.

[0019] Furthermore, the insulating adhesive is made of epoxy adhesive.

[0020] Furthermore, the exposure time is 10s to 20s.

[0021] Furthermore, the readout anode plate and the mask plate both have positioning holes, and the positioning holes are used for positioning when the mask plate is placed on the readout anode plate.

[0022] Furthermore, the preset thickness of the photoresist layer is 100 μm to 200 μm.

[0023] Furthermore, the metal micro-mesh is covered on the photoresist layer, and the tension of the metal micro-mesh is 10N / cm to 20N / cm.

[0024] The manufacturing method of the microgrid detector provided in the embodiment of the present application is to apply liquid photoresist to a preset thickness on the readout anode plate to form a photoresist layer, thereby avoiding the situation where the yield is insufficient due to multiple coatings of solid photoresist, thereby improving the quality and yield of the microgrid detector. The metal microgrid is covered on the photoresist layer and etched to form an insulating pillar, which can then be processed by photolithography equipment to achieve batch production, improve production efficiency, and realize batch production. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 A schematic diagram of a process for manufacturing a microgrid detector provided in an embodiment of the present application;

[0026] Figure 2 A schematic diagram of the structure of a microgrid detector provided in an embodiment of the present application;

[0027] Figure 3 A schematic diagram of the third step of the microgrid detector manufacturing process provided in an embodiment of the present application;

[0028] Figure 4 A schematic diagram of the operation of a microgrid detector provided in an embodiment of the present application;

[0029] Figure 5 A schematic diagram of a process for forming an insulating pillar in a method for manufacturing a microgrid detector provided in an embodiment of the present application;

[0030] Figure 6 A schematic diagram of the structure of an insulating support provided in an embodiment of the present application;

[0031] Figure 7 A schematic structural diagram of a first mask plate provided in an embodiment of the present application;

[0032] Figure 8 A schematic diagram of the structure of a second mask plate provided in an embodiment of the present application;

[0033] Fig. 9 A schematic structural diagram of a third mask plate provided in an embodiment of the present application; and

[0034] Fig.10 A schematic structural diagram of a fourth mask plate provided in an embodiment of the present application.

[0035] Description of reference numerals:

[0036] 1. Readout anode plate; 2. Photoresist layer; 21. Insulating pillar; 21A. Pillar outer layer; 21B. Insulating glue layer; 3. Metal micromesh; 4. Drift electrode; 5. Mask plate; 5A. Annular through hole; 5B. Circular cover portion; 5C. First through hole; 5D. First cover block; 51. First mask layer; 52. Second mask layer; A. Drift electric field region; B. Avalanche electric field region; C. Amplifier. DETAILED DESCRIPTION

[0037] The specific implementation methods of the present application are described in detail below with reference to the accompanying drawings.

[0038] It should be noted that, in the absence of conflict, the embodiments and technical features in the embodiments of the present application can be combined with each other, and the detailed description in the specific implementation method should be understood as an explanation of the purpose of the present application and should not be regarded as an improper limitation on the present application.

[0039] In the description of the present application, the terms "first / second" involved are merely used to distinguish similar objects and do not represent a specific order for the objects. It can be understood that "first / second" can be interchanged with a specific order or sequence where permitted, so that the embodiments of the present application described herein can be implemented in an order other than that illustrated or described herein.

[0040] It should be understood that the orientation or position relationship is based on the orientation or position relationship shown in the drawings. These orientation terms are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present application.

[0041] At present, dry film lithography is usually used to etch solid photoresist to form the avalanche zone structure of the microgrid detector. On the one hand, the cost of solid photoresist is relatively high, the procurement cycle is long, and it often needs to be imported from abroad. On the other hand, the thickness of solid photoresist is difficult to directly adapt to the size of the avalanche zone structure. Generally, the solid photoresist needs to be coated multiple times and stacked into multiple layers to meet the thickness requirements. The stacking process often affects the quality of the microgrid detector and greatly reduces the yield of the microgrid detector.

[0042] When the hot melt adhesive film heat pressing method is used to produce the microgrid detector, it is processed by hot roller pressing, which has low production efficiency, cannot achieve mass production, and is difficult to meet market demand.

[0043] In view of this, if Figure 1 As shown, the embodiment of the present application proposes a method for manufacturing a microgrid detector, including:

[0044] S10, prepare the readout anode plate and metal micro-mesh;

[0045] S20, applying liquid photoresist to a preset thickness on the readout anode plate to form a photoresist layer;

[0046] S30, covering the metal micro-mesh on the photoresist layer, and etching to form an insulating pillar;

[0047] S40, making a drift electrode on the readout anode plate to complete the production of the microgrid detector.

[0048] In the examples of this application, see Figure 2 to Figure 4 The microgrid detector includes a readout anode plate 1, a metal microgrid 3, an insulating support 21 and a drift electrode 4, wherein the insulating support 21 separates the metal microgrid 3 and the drift electrode to form an avalanche electric field region B, and a drift electric field region A is formed between the readout anode plate 1 and the metal microgrid 3. When particles are incident on the drift electric field region A, the electric field in the drift electric field region A is relatively low (about 1 kV / cm), and the original ionized electrons generated drift to the avalanche electric field region B (strong electric field region) below to generate an avalanche, which mainly develops to the maximum within a few microns near the readout anode plate 1. The movement of positive ions also makes an important contribution to the induced signal. In a narrow high electric field region close to the collected signal, the positive ions move in the opposite direction, and the speed and time required for them to cross to the metal microgrid 3 are very short, and they induce a negative signal on the readout anode plate 1 (anode), which is important for the contribution to the anode signal, so that the detection signal has excellent time performance. Therefore, the manufacturing process and production quality of the insulating pillar 21 in the avalanche electric field region B have a great impact on the detection signal, and directly affect the quality and accuracy of the microgrid detector. In the microgrid detector of the embodiment of the present application, liquid photoresist is applied to the readout anode plate 1 to a preset thickness to form a photoresist layer 2, and the metal microgrid 3 is covered on the photoresist layer 2 and etched to form the insulating pillar 21, thereby avoiding multiple coatings of solid photoresist. At the same time, the microgrid detector of the embodiment of the present application can be processed by photolithography equipment to achieve mass production, improve production efficiency, and realize mass production.

[0049] Specifically, the readout anode plate 1 and the metal micromesh 3 are cleaned, and the cleaned readout anode plate 1 and the metal micromesh 3 are dried, thereby completing the preparation of the readout anode plate 1 and the metal micromesh 3, so as to facilitate the subsequent processing of the readout anode plate 1 and the metal micromesh 3. For example, for measuring X-rays, xenon (Xe) is selected as the gas. In the process of manufacturing the gas detector, a suitable readout anode plate 1 and the metal micromesh 3 are first selected, and the readout anode plate 1 and the metal micromesh 3 are cleaned and dried to facilitate the subsequent manufacturing process.

[0050] It should be understood that for different gas detectors, the readout anode plate 1, the metal micromesh 3, and the drift electrode 4 should all be adapted to the use environment and usage requirements of the gas detector, and the readout anode plate 1, the metal micromesh 3, and the drift electrode 4 should be reasonably selected. The above is only explained by taking the gas detector for measuring X-rays and using xenon (Xe) as the gas as an example, and should not be understood as a limitation of the present application.

[0051] After the readout anode plate 1 is cleaned and dried, liquid photoresist is applied to the readout anode plate 1 to a preset thickness to form a photoresist layer 2, wherein the preset thickness of the photoresist layer 2 can be changed according to the measurement requirements of different detectors. For example, the liquid photoresist is applied to the readout anode plate 1, and the readout anode plate 1 coated with the liquid photoresist is placed on a coating machine, and the liquid photoresist is evenly applied and scraped by the coating machine, so that the thickness of the liquid photoresist on the readout anode plate 1 reaches a preset thickness, thereby forming a photoresist layer 2.

[0052] It should be noted that since in the above steps, liquid photoresist is used to form a photoresist layer 2 of a preset thickness at one time, it is possible to avoid multiple coatings with solid photoresist (solid photoresist film) to a preset thickness, thereby increasing the requirements for the avalanche electric field region B, and further improving the yield and quality of the microgrid detector implemented in this application.

[0053] After the photoresist layer 2 reaches a preset thickness and meets the use requirements of the microgrid detector, the metal microgrid 3 is covered on the photoresist layer 2 and etched to form an insulating pillar 21. For example, the photoresist layer 2 covered with the metal microgrid 3 is placed on a photolithography device for processing, and the remaining parts except the insulating pillar 21 are etched on the photoresist layer 2 to form the insulating pillar 21. The insulating pillar 21 supports the metal microgrid 3, and an avalanche electric field region B is formed between the insulating pillar 21 and the readout anode plate 1. The particles to be detected enter the detection thickness, causing the movement of positive and negative ions. After passing through the avalanche electric field region B, the detector obtains a detection signal, and the detection signal sends an alarm through the amplifier C (see Figure 4 ).

[0054] Since the photoresist layer 2 covered with the metal micro-grid 3 is etched, it can be processed in batches through photolithography equipment to improve the production efficiency of the micro-grid detector. At the same time, it should be noted that liquid photoresist is often used as an auxiliary processing material in semiconductor processing technology, and does not form a key component. It is completely different from the role of liquid photoresist etching to form insulating pillars 21 in this application. For example, in the wafer etching process, before the wafer is processed, the liquid photoresist is applied to the wafer. After exposure and development, the photoresist is formed into a "frame" in the subsequent processing steps. The laser etches the wafer in the "frame". After the wafer etching is completed, the "frame" is removed.

[0055] A drift electrode 4 is made on the readout anode plate 1 to complete the production of the microgrid detector. Specifically, after the insulating pillar 21 is completed, the drift electrode 4 is made, and a drift electric field region A is formed between the drift electrode 4 and the metal microgrid 3. After the particles to be detected enter the drift electric field region A, the movement of positive and negative ions is caused. In particular, after the drift electrode 4 is made, a frame is made and a readout connector is welded, thereby realizing the production of the microgrid detector, and connecting it to an external circuit, and then an observable and obtainable detection signal can be obtained.

[0056] The various detailed implementation steps of the method for manufacturing a microgrid detector provided in an embodiment of the present application are specifically described below.

[0057] S10. Prepare the readout anode plate and metal micromesh.

[0058] Specifically, according to the usage requirements of different microgrid detectors, an adapted readout anode plate 1 and a metal microgrid 3 are selected, and the cleaned readout anode plate 1 and the metal microgrid 3 are dried to complete the preparation of the readout anode plate 1 and the metal microgrid 3, so as to facilitate the processing of the readout anode plate 1 and the metal microgrid 3 in subsequent steps.

[0059] In particular, in the step of preparing the readout anode plate 1 and the metal micromesh 3, the drift electrode 4 can be prepared together. Alternatively, when the drift electrode 4 is involved in the subsequent production process of the micromesh detector, the drift electrode 4 is prepared. Alternatively, only the readout anode plate 1 is prepared first, and the metal micromesh 3 is prepared before performing S30. The above-mentioned production process of the micromesh detector is only demonstrated in S10, which should not be understood as an improper limitation of the embodiments of the present application. It should be pointed out that in the S10 step, preparing the readout anode plate 1 and the metal micromesh 3 together can save subsequent time and improve the production efficiency of the micromesh detector.

[0060] S20, applying liquid photoresist to a preset thickness on the readout anode plate to form a photoresist layer.

[0061] Specifically, after the readout anode plate 1 is cleaned and dried, according to the detection requirements of different detectors, liquid photoresist is applied to the readout anode plate 1 to a preset thickness to form a photoresist layer 2, and the preset thickness of the photoresist layer 2 is consistent with the distance of the avalanche electric field region B. The liquid photoresist is applied to the preset thickness by a coating method. For example, the liquid photoresist is applied to the readout anode plate 1, and the readout anode plate 1 coated with the liquid photoresist is placed on a coating machine, and the liquid photoresist is evenly coated by the coating machine. By adjusting the parameters of the coating machine, the liquid photoresist processed by the coating machine reaches a preset thickness. In the above-mentioned coating method for applying liquid photoresist, the parameters of the coating machine are adjusted according to the preset thickness of different photoresist layers 2, so as to meet the requirements of different preset thicknesses.

[0062] In one embodiment, the preset thickness of the photoresist layer 2 is 100 μm to 200 μm. For example, the preset thickness of the photoresist layer 2 is 100 μm, so that after subsequent S30 and S40, the spacing between the readout anode plate 1 and the metal micromesh 3 of the micromesh detector is 100 μm, thereby forming an avalanche electric field region B with a spacing of 100 μm.

[0063] It should be noted that in S20, since the liquid photoresist forms a photoresist layer 2 of a preset thickness at one time, the process of multiple coatings with solid photoresist (solid photoresist film) to a preset thickness is avoided, thereby improving the accuracy and efficiency of the microgrid detector and reducing the defective rate and quality damage of the microgrid detector.

[0064] S30, covering the metal micro-mesh on the photoresist layer, and etching to form an insulating pillar;

[0065] Specifically, after the thickness of the photoresist layer 2 meets the requirements of the microgrid detector, the metal microgrid 3 is covered on the photoresist layer 2 and etched to form the insulating pillar 21. For example, the liquid photoresist is a positive photoresist, the photoresist layer 2 covered with the metal microgrid 3 is placed on the photolithography equipment for processing, and the remaining parts except the insulating pillar 21 are etched on the photoresist layer 2 to form the insulating pillar 21. In particular, the metal microgrid 3 is covered on the photoresist layer, and the tension of the metal microgrid 3 is 10N / cm to 20N / cm. For example, the tension of the metal microgrid 3 is 20N / cm, which is conducive to increasing the spacing between the insulating pillars 21, reducing the support dead zone area, and reducing the risk of warping of the readout anode plate 1, thereby making the structure of the microgrid detector compact, reducing particle scattering when the amount of introduced material is low, and improving the detection effect of the microgrid detector.

[0066] In one embodiment, if Figure 5 and Figure 6 As shown, S30, the step of covering the metal micro-mesh on the photoresist layer and etching to form an insulating pillar specifically includes:

[0067] S310, covering the metal micro-mesh on the photoresist layer;

[0068] S320, placing a mask plate on the photoresist layer, exposing and etching to form a hollow pillar;

[0069] S330, injecting insulating glue into the hollow pillar to form an insulating pillar.

[0070] Specifically, after the thickness of the photoresist layer 2 meets the preset requirements, the metal micro-mesh 3 is covered on the photoresist layer 2. For example, both the readout anode plate 1 and the mask plate 5 have positioning holes, and the positioning holes are used for positioning the mask plate 5 when covering the readout anode plate 1.

[0071] The mask plate 5 is covered on the photoresist layer 2, and a hollow pillar is formed after exposure and etching. For example, the exposure time is 10s to 20s, and the photoresist layer 2 covered with the mask plate 5 is exposed for 10s to 20s, and the remaining part is etched on the photoresist layer 2 to form a hollow pillar. It should be noted that the exposure time directly affects the performance of the microgrid detector. If the exposure time is too short, the photoresist layer 2 will not be fully exposed, and if the exposure time is too long, it will cause a large dispersion in the photoresist layer 2, resulting in different areas of the upper and lower surfaces of the photoresist layer 2, and then the cross-sectional areas of the upper and lower surfaces of the insulating pillar 21 formed after etching are not connected, which affects the detection effect of the microgrid detector and even fails to detect.

[0072] Insulating glue is poured into the hollow pillar to form an insulating pillar 21. Since the insulating glue is poured into the insulating pillar 21, the supporting effect of the insulating pillar 21 on the metal micromesh 3 is strengthened. At the same time, the connection strength and insulation effect between the metal micromesh 3 and the readout anode plate 1 are improved, thereby improving the reliability and detection performance of the micromesh detector. In particular, the insulating glue is made of epoxy glue. The hollow part of the hollow pillar is poured with epoxy glue to form the insulating pillar 21. At this time, the insulating pillar 21 includes a pillar outer layer 21A and an insulating glue layer 21B. The pillar outer layer 21A is formed by liquid photoresist, and the insulating glue layer 21B is formed by insulating glue. Since epoxy glue has good insulation and bonding properties, the supporting effect, insulation effect and connection strength of the insulating pillar 21 are further improved.

[0073] In one embodiment, if Figure 7 and Figure 8 As shown, the liquid photoresist is a reverse photoresist, and the mask plate 5 is provided with an annular through hole 5A, which is used to form a cylindrical hollow pillar after exposure and etching.

[0074] Specifically, the liquid photoresist is a reverse glue, and the reverse glue is applied to the readout anode plate 1. After being applied to a preset thickness, a photoresist layer 2 of the reverse glue is formed, and after being exposed by the mask plate 5, a mesoporous pillar is formed. At this time, the exposure area is an annular through hole 5A, and the reverse glue of other parts outside the exposure area is etched to form a mesoporous pillar. For example, the reverse glue at the center of the annular through hole 5A is exposed and etched to form a hole for the mesoporous pillar for injecting insulating glue. In particular, the number of the annular through holes 5A is multiple, and the multiple annular through holes 5A are arranged in rows. Specifically, the mask plate 5 is provided with multiple annular through holes 5A, and the multiple annular through holes 5A are arranged in rows to form multiple rows of annular through holes 5A. After exposure and etching, multiple rows of insulating pillars 21 are formed, thereby strengthening the connection between the metal micro-mesh 3 and the readout anode plate 1 by the insulating pillars 21, and at the same time improving the supporting effect of the insulating pillars 21 on the metal micro-mesh 3. For example, adjacent rows of annular through holes 5A are staggered, thereby further improving the supporting effect and connection strength of the insulating pillars 21 formed in subsequent steps on the metal micro-mesh 3.

[0075] In one embodiment, if Fig. 9 As shown, the liquid photoresist is a positive photoresist, and the mask plate 5 is provided with a circular cover portion 5B, and the circular cover portion 5B is used to form a cylindrical hollow pillar after exposure and etching. Specifically, the liquid photoresist is a positive photoresist, and the positive photoresist is applied to the readout anode plate 1. After being applied to a preset thickness, a positive photoresist layer 2 is formed. After being exposed through the circular cover portion 5B of the mask plate 5, the exposed area of ​​the positive photoresist is etched away to form a mesoporous pillar. For example, the positive photoresist at the central circular hole of the circular cover portion 5B is exposed and etched to form a hole for the mesoporous pillar for pouring insulating glue. In particular, the number of the circular ring covering parts 5B is multiple, and the multiple circular ring covering parts 5B are arranged in rows. Specifically, the mask plate 5 is provided with multiple circular ring covering parts 5B, and the multiple circular ring covering parts 5B are arranged in rows to form multiple rows of circular ring covering parts 5B. After exposure and etching, multiple rows of insulating pillars 21 are formed, thereby strengthening the connection between the metal micro-mesh 3 and the readout anode plate 1 by the insulating pillars 21, and improving the supporting effect of the insulating pillars 21 on the metal micro-mesh 3. For example, adjacent rows of circular ring covering parts 5B are staggered, thereby further improving the supporting effect and connection strength of the insulating pillars 21 on the metal micro-mesh 3 formed in subsequent steps.

[0076] In one embodiment, if Fig.10 As shown, the mask plate 5 includes a first mask layer 51 and a second mask layer 52, the first mask layer 51 is provided with a first through hole 5C, the second mask layer 52 is provided with a first through hole 5C, the first through hole 5C and the first cover block 5D are used to form a hollow pillar after exposure and etching. Specifically, the first through hole 5C of the first mask layer 51 and the first cover block 5D of the second mask layer 52 can be combined and stacked to form an annular through hole 5A or an annular cover portion 5B, and after exposure through the annular through hole 5A or the annular cover portion 5B, etching is performed to form a hollow pillar. For example, the liquid photoresist is an inverted glue, the first mask layer 51 and the second mask layer 52 are assembled into the mask plate 5, the first through hole 5C and the first through hole 5C are combined to form an annular through hole 5A, the photoresist layer 2 formed by the inverted glue is exposed through the mask plate 5 of the annular through hole 5A, and the remaining part except for the hollow pillar is etched to form a hollow pillar. It should be noted that the above description only takes the liquid photoresist as the reverse photoresist, and the first through hole 5C and the first through hole 5C are combined to form the annular through hole 5A as an example. In order to avoid redundancy, the specific details of the first mask layer 51 and the second mask layer 52 being assembled into the mask plate 5 when the liquid photoresist is the positive photoresist are not described, but it should not be understood as a limitation on the present application.

[0077] S40, making a drift electrode on the readout anode plate to complete the production of the microgrid detector.

[0078] Specifically, a drift electrode 4 is made on the readout anode plate 1. For example, a drift electrode 4 adapted to the requirements of different detectors is made, and a drift electric field region A is formed between the drift electrode 4 and the metal microgrid 3, so that the drift electric field region A meets the requirements of the microgrid detector.

[0079] In one embodiment, after the drift electrode 4 is made on the readout anode plate 1, the frame of the microgrid detector is made to protect the drift electric field region A and the avalanche electric field region B. After the frame is made, the readout connector is welded to complete the manufacture of the microgrid detector.

[0080] In order to better understand the method for manufacturing the microgrid detector according to the embodiment of the present application, the method for manufacturing the microgrid detector is further described below.

[0081] (1) Making a readout anode plate 1 and a metal micromesh 3. For example, according to different detection requirements of the micromesh detector, the readout anode plate 1 and the metal micromesh 3 are made, and the made readout anode plate 1 and the metal micromesh 3 are cleaned and dried, thereby completing the preparation of the readout anode plate 1 and the metal micromesh 3.

[0082] (2) Liquid photoresist is evenly applied on the readout anode plate 1 to reach a preset thickness. During the process of applying the liquid photoresist, the liquid photoresist is evenly applied on the readout anode plate 1 by a photoresist spreader to form a photoresist layer 2. It should be noted that the liquid photoresist can be a positive photoresist or a negative photoresist, which is selected according to the detection requirements of the microgrid detector.

[0083] (3) Expose and etch the readout anode plate 1 coated with a uniform liquid photoresist. For example, according to the different liquid photoresists used, select an appropriate mask plate 5 to expose the liquid photoresist, and then etch it after exposure to form a hollow pillar.

[0084] (4) Epoxy glue is poured into the hollow part of the hollow pillar to form an insulating pillar 21, and the insulating pillar 21 is located between the readout anode plate 1 and the metal micro-mesh 3 to form an avalanche electric field region B. After the positive and negative ions enter the avalanche electric field region B, they are amplified and the detection signal is obtained after passing through the amplifier C.

[0085] (5) Make drift electrode 4, make frame and weld readout connector. For example, make drift electrode 4 on readout anode plate 1, and form drift electric field region A between drift electrode 4 and metal microgrid 3. After the measured particles are injected into drift electric field region A, positive and negative ions move. Electrically connect drift electrode 4, metal microgrid 3 and readout anode plate 1 with related devices to complete the production of microgrid detector.

[0086] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit the same. Although the present application has been described in detail with reference to the aforementioned embodiments, it is still possible for those skilled in the art to modify the technical solutions described in the aforementioned embodiments, or to replace some of the technical features therein by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions claimed to be protected by the present application.

Claims

1. A method for manufacturing a microgrid detector, characterized in that: include: Prepare the readout anode plate and metal micromesh; Applying liquid photoresist to a preset thickness on the readout anode plate, so that the liquid photoresist forms a single photoresist layer with a preset thickness at one time; Covering the metal micro-mesh on the photoresist layer; Covering the photoresist layer with a mask plate, exposing and etching to form a hollow pillar; Injecting insulating glue into the hollow pillar to form an insulating pillar; A drift electrode is fabricated on the readout anode plate to complete the fabrication of the microgrid detector.

2. The method according to claim 1, characterized in that: The liquid photoresist is a reverse photoresist, and the mask plate is provided with an annular through hole, and the annular through hole is used to form the cylindrical hollow pillar after exposure and etching; or, The liquid photoresist is a positive photoresist, and the mask plate is provided with a circular ring covering portion, which is used to form the cylindrical hollow pillar after exposure and etching.

3. The method according to claim 2, characterized in that: There are multiple annular through holes, and the multiple annular through holes are arranged in rows.

4. The method according to claim 2, characterized in that: The number of the circular ring covering parts is plural, and the plurality of circular ring covering parts are arranged in a row.

5. The method according to claim 1, characterized in that: The insulating adhesive is made of epoxy adhesive.

6. The method according to claim 1, characterized in that: The exposure time is 10s~20s.

7. The manufacturing method according to claim 1, characterized in that: The readout anode plate and the mask plate both have positioning holes, and the positioning holes are used for positioning when the mask plate is placed on the readout anode plate.

8. The manufacturing method according to claim 1, characterized in that: The preset thickness of the photoresist layer is 100 μm to 200 μm.

9. The production method according to any one of claims 1 to 8, characterized in that: The metal micro-mesh is covered on the photoresist layer, and the tension of the metal micro-mesh is 10N / cm-20N / cm.

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