A thermoelectric conversion device and its preparation method, and a thermoelectric conversion system

Abstract

The present invention provides a thermoelectric conversion device and a preparation method thereof, and a thermoelectric conversion system, wherein the thermoelectric conversion device comprises: a first electrode; a P-type element and an N-type element located on a side surface of the first electrode and electrically connected to the first electrode; a second electrode located on a side of the P-type element and the N-type element away from the first electrode; a first heat conducting plate located on the first electrode away from the P-type element and the N-type element; a second heat conducting plate located on the second electrode away from the P-type element and the N-type element; a microstructure located on the surface of the first heat conducting plate and / or the second heat conducting plate, wherein the direction from the first surface of the microstructure to the second surface of the microstructure is the same as the direction from the first heat conducting plate to the second heat conducting plate, and the area of ​​the first surface is smaller than the area of ​​the second surface. The microstructure realizes directional control of heat flow in the thermoelectric conversion device, thereby increasing the temperature difference between the two ends of the thermoelectric conversion device, and further increasing the thermoelectric conversion efficiency or cooling power of the thermoelectric conversion device.

Description

Technical Field

[0001] The present invention relates to the technical field of thermoelectric conversion, and in particular to a thermoelectric conversion device and a preparation method thereof, and a thermoelectric conversion system. Background Art

[0002] Thermoelectric materials are pollution-free green energy materials that use the thermoelectric effect to directly convert heat and electricity. Thermoelectric materials can generate electricity using temperature differences without mechanical parts or chemical reactions; they can also use voltage differences to cool without compressors or refrigerants such as Freon. This makes thermoelectric conversion devices ideal vibration-free, noise-free, leak-free, small-sized, environmentally friendly power sources and refrigerators. In recent years, they have been widely used in industrial waste heat, geothermal power generation, clean energy wind and solar heat and power cogeneration, smart buildings and communities, deep space exploration, deep sea exploration, and heat dissipation of microelectronics and optoelectronic devices.

[0003] Thermoelectric conversion efficiency is a key intrinsic parameter for measuring the thermoelectric conversion capacity of materials. How to regulate and improve the thermoelectric conversion efficiency is the basis for the optimal design and application of thermoelectric materials, devices and systems. It is also a bottleneck problem that restricts the research and development of thermoelectric materials, device and system optimization and application. It seriously restricts the development of new thermoelectric materials and devices, efficient and intelligent utilization of energy, aerospace thermoelectric management, energy-saving smart cities, distributed energy supply and storage technologies at this stage.

[0004] At present, the thermoelectric conversion efficiency of thermoelectric conversion devices is generally low (ZT≈1), and the application of thermoelectric conversion devices and systems is greatly limited. Summary of the invention

[0005] Therefore, the present invention provides a thermoelectric conversion device and a preparation method thereof, and a thermoelectric conversion system to improve the thermoelectric conversion efficiency of the thermoelectric conversion device.

[0006] The present invention provides a thermoelectric conversion device, comprising: a first electrode; a P-type element and an N-type element located on a side surface of the first electrode and electrically connected to the first electrode; a second electrode located on a side of the P-type element and the N-type element away from the first electrode; a first heat conducting plate located on the first electrode away from the P-type element and the N-type element; a second heat conducting plate located on the second electrode away from the P-type element and the N-type element; a microstructure, wherein the microstructure is located on a side surface of the first heat conducting plate away from the first electrode, and / or, located on a side surface of the first heat conducting plate facing the first electrode and in contact with the first electrode, and / or, located on a side surface of the second heat conducting plate facing the second electrode and in contact with the second electrode; the microstructure has a first surface and a second surface arranged opposite to each other, the direction from the first surface to the second surface is the same as the direction from the first heat conducting plate to the second heat conducting plate, and the area of ​​the first surface is smaller than the area of ​​the second surface.

[0007] Optionally, the thickness of the microstructure is of micro-nano scale.

[0008] Optionally, the thickness of the microstructure is 10 nm to 10 μm.

[0009] Optionally, the number of the microstructures located on one side surface of the first heat conducting plate or the second heat conducting plate is one or more; and the plurality of microstructures are arranged in an array or in parallel.

[0010] Optionally, the material of the microstructure is an insulating layer, and the thermal conductivity of the microstructure is 10 W / (mK)-300 W / (mK).

[0011] Optionally, the material of the microstructure includes boron nitride, aluminum nitride, silicon nitride or silicon carbide.

[0012] Optionally, the area of ​​the first surface is greater than zero.

[0013] Optionally, the shape of the microstructure includes a frustum or a prism.

[0014] Optionally, a plurality of microstructures arranged in parallel are provided on a surface of the first heat conducting plate facing away from the first electrode and on a surface of the second heat conducting plate facing the second electrode.

[0015] The present invention also provides a method for preparing a thermoelectric conversion device, comprising: providing a first heat conducting plate and a second heat conducting plate, the first heat conducting plate having a first side and a second side opposite to each other, the second heat conducting plate having a third side and a fourth side opposite to each other, at least one of the first side, the second side, the third side and the fourth side being formed with a microstructure, the microstructure having a first surface and a second surface opposite to each other, the area of ​​the first surface being smaller than the area of ​​the second surface; providing a first electrode and a second electrode; arranging a P-type element between the first electrode and a part of the second electrode, and arranging an N-type element between the first electrode and another part of the second electrode; arranging the first heat conducting plate on a side of the first electrode away from the P-type element, and arranging the second heat conducting plate on a side of the second electrode away from the P-type element, the direction of the microstructure from the first surface to the second surface is the same as the direction from the first heat conducting plate to the second heat conducting plate.

[0016] Optionally, the microstructure is formed by 3D printing, laser ablation, photolithography plus etching or precision casting.

[0017] The present invention also provides a thermoelectric conversion system, comprising the thermoelectric conversion device.

[0018] The technical solution of the present invention has the following advantages:

[0019] 1. The thermoelectric conversion device provided by the present invention is provided with a microstructure, the area of ​​the first surface of the microstructure is smaller than the area of ​​the second surface, and the direction from the first surface to the second surface is the same as the direction from the first heat conducting plate to the second heat conducting plate, that is, the microstructure is asymmetric in the direction from the first heat conducting plate to the second heat conducting plate, which causes a thermal rectification effect in the thermoelectric conversion device during the thermoelectric conversion process, that is, the heat flow from the second heat conducting plate to the first heat conducting plate (forward heat flow) is greater than the heat flow from the first heat conducting plate to the second heat conducting plate (reverse heat flow), and the directional regulation of the heat flow increases the temperature difference between the two ends of the thermoelectric conversion device, thereby increasing the thermoelectric conversion efficiency or cooling power of the thermoelectric conversion device.

[0020] 2. The thermoelectric conversion device provided by the present invention has a microstructure with a thickness of micro-nano scale. On the one hand, the microstructure of micro-nano scale has a lower effective thermal conductivity, which can increase the thermoelectric figure of merit, thereby increasing the thermoelectric conversion efficiency or cooling power of the thermoelectric conversion device; on the other hand, the micro-nano scale will increase the thermal rectification effect, which increases the temperature difference at both ends of the device, thereby increasing the thermoelectric conversion efficiency or cooling power of the thermoelectric conversion device.

[0021] 3. The preparation method of the thermoelectric conversion device provided by the present invention realizes the directional regulation of the heat flow in the thermoelectric conversion device by forming a microstructure, thereby increasing the temperature difference at both ends of the thermoelectric conversion device, and further increasing the thermoelectric conversion efficiency or cooling power of the thermoelectric conversion device.

[0022] 4. The thermoelectric conversion system provided by the present invention has a thermoelectric conversion device provided with a microstructure, which has a higher thermoelectric conversion efficiency or cooling power. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0024] Figure 1 A schematic diagram of the structure of a thermoelectric conversion device provided in Example 1 of the present invention;

[0025] Figure 2 for Figure 1 Front view of the microstructure shown;

[0026] Figure 3 for Figure 1 A top view of a matrix-arranged microstructure is shown;

[0027] Figure 4 for Figure 1 A top view of another matrix-arranged microstructure is shown;

[0028] Description of reference numerals:

[0029] 1-first heat conducting plate; 11-first side; 12-second side; 2-first electrode; 3-second electrode; 4-second heat conducting plate; 41-third side; 42-fourth side; 5-microstructure; 51-microstructure setting area; 6-P-type element; 7-N-type element. DETAILED DESCRIPTION

[0030] The main idea to improve the thermoelectric conversion efficiency or cooling power of a device is to adjust the inherent parameters of the material, such as the thermoelectric figure of merit (ZT), electrical conductivity (σ), thermal conductivity (κ), and Seebeck coefficient (S), or to increase the temperature difference between the two ends of the device.

[0031] At present, the main method to improve the thermoelectric figure of merit of materials is to change the internal micro-nanostructure or doping concentration of the material, reduce the thermal conductivity of the material, increase the electrical conductivity and Seebeck coefficient of the material. This method involves material type matching, doping concentration, defect control, etc., and it is still difficult to improve the thermoelectric conversion efficiency.

[0032] The other is to improve the thermoelectric conversion efficiency of the device by reducing the contact thermal resistance and contact resistance, reducing the heat leakage on the side of the thermoelectric arm, and optimizing the design of the device size and the coupling relationship between the various parts using finite element numerical simulation. However, these can only play a patching role, through various design matching to make the device reach the thermoelectric conversion efficiency that the material should have, and cannot further improve the device conversion efficiency when the materials of each part are fixed.

[0033] On this basis, the present invention provides a thermoelectric conversion device, comprising: a first electrode; a P-type element and an N-type element located on one side surface of the first electrode and electrically connected to the first electrode; a second electrode located on the side of the P-type element and the N-type element away from the first electrode; a first heat conducting plate located on the first electrode away from the P-type element and the N-type element; a second heat conducting plate located on the second electrode away from the P-type element and the N-type element; a microstructure, the microstructure is located on the side surface of the first heat conducting plate away from the first electrode, and / or, located on the side surface of the first heat conducting plate facing the first electrode and in contact with the first electrode, and / or, located on the side surface of the second heat conducting plate away from the second electrode, and / or, located on the side surface of the second heat conducting plate facing the second electrode and in contact with the second electrode; the microstructure has a first surface and a second surface arranged oppositely, the direction from the first surface to the second surface is the same as the direction from the first heat conducting plate to the second heat conducting plate, and the area of ​​the first surface is smaller than the area of ​​the second surface. The thermoelectric conversion device has a high thermoelectric conversion efficiency or cooling power.

[0034] The technical solution of the present invention will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0035] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", "third", and "fourth" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0036] Example 1

[0037] See also Figure 1, this embodiment provides a thermoelectric conversion device, including:

[0038] A first electrode 2;

[0039] A P-type element 6 and an N-type element 7 located on one side surface of the first electrode 2 and electrically connected to the first electrode 2;

[0040] A second electrode 3 located at a side of the P-type element 6 and the N-type element 7 away from the first electrode 2;

[0041] A first heat conducting plate 1 located at the first electrode 2 away from the P-type element 6 and the N-type element 7;

[0042] A second heat conducting plate 4 located at the second electrode 3 away from the P-type element 6 and the N-type element 7;

[0043] A microstructure 5, wherein the microstructure 5 is located on a side surface of the first heat conducting plate 1 facing away from the first electrode 2, and / or, located on a side surface of the first heat conducting plate 1 facing the first electrode 2 and in contact with the first electrode 2, and / or, located on a side surface of the second heat conducting plate 4 facing away from the second electrode 3, and / or, located on a side surface of the second heat conducting plate 4 facing the second electrode 3 and in contact with the second electrode 3; the microstructure 5 has a first surface and a second surface that are oppositely arranged, the direction from the first surface to the second surface is the same as the direction from the first heat conducting plate 1 to the second heat conducting plate 4, and the area of ​​the first surface is smaller than the area of ​​the second surface.

[0044] The above-mentioned thermoelectric conversion device is provided with a microstructure 5, the area of ​​the first surface of the microstructure 5 is smaller than the area of ​​the second surface, and the direction from the first surface to the second surface is the same as the direction from the first heat conducting plate 1 to the second heat conducting plate 4, that is, the microstructure 5 is asymmetric in the direction from the first heat conducting plate 1 to the second heat conducting plate 4, which causes a thermal rectification effect in the thermoelectric conversion device during the thermoelectric conversion process, that is, the heat flow (forward heat flow) from the second heat conducting plate 4 to the first heat conducting plate 1 is greater than the heat flow (reverse heat flow) from the first heat conducting plate 1 to the second heat conducting plate 4, and the directional regulation of the heat flow increases the temperature difference between the two ends of the thermoelectric conversion device, thereby increasing the thermoelectric conversion efficiency or cooling power of the thermoelectric conversion device.

[0045] Specifically, the first heat conducting plate 1 has a first side 11 and a second side 12 opposite to each other, the second heat conducting plate 4 has a third side 41 and a fourth side 42 opposite to each other, the direction from the first side 11 to the second side 12 is the same as the direction from the first heat conducting plate 1 to the second heat conducting plate 4, and the direction from the third side 41 to the fourth side 42 is the same as the direction from the first heat conducting plate 1 to the second heat conducting plate 4. In a first embodiment, the microstructure 5 is located on one side surface of the first side 11, the second side 12, the third side 41 and the fourth side 42; in a second embodiment, the microstructure 5 is located on two side surfaces of the first side 11, the second side 12, the third side 41 and the fourth side 42, as shown in FIG. Figure 1 As shown, the microstructure 5 is located on the surface of the first side 11 and the third side 41; in the third embodiment, the microstructure 5 is located on the surface of three of the first side 11, the second side 12, the third side 41 and the fourth side 42; in the fourth embodiment, the microstructure 5 is located on the surface of four of the first side 11, the second side 12, the third side 41 and the fourth side 42. The rectifying effect is superimposed with the increase of the number of sides provided with the microstructure 5. When the first side 11, the second side 12, the third side 41 and the fourth side 42 are all provided with the microstructure 5, the rectifying effect is the largest, that is, the thermoelectric conversion device has the largest thermoelectric conversion efficiency or cooling power.

[0046] In this embodiment, if Figure 1-Figure 2 As shown, the area of ​​the first surface is greater than zero. The rectification effect is positively correlated with the asymmetry of the microstructure 5, that is, the greater the difference between the area of ​​the first surface and the area of ​​the second surface, the more obvious the thermal rectification effect. When the microstructure 5 is located on the second side 12 and the third side 41, the area of ​​the first surface is greater than zero, which can ensure the structural stability of the thermoelectric conversion device while obtaining a significant thermal rectification effect.

[0047] As an optional implementation, Figure 3-Figure 4 As shown, the shape of the microstructure 5 includes but is not limited to a truncated cone or a prism. When the shape of the microstructure is a truncated cone, the cone angle of the truncated cone is 5 degrees to 175 degrees. Exemplarily, the cone angle can be 5 degrees, 30 degrees, 60 degrees, 90 degrees, 120 degrees, 150 degrees or 175 degrees.

[0048] In this embodiment, the thickness of the microstructure 5 is of micro-nano scale, that is, the thickness of the microstructure 5 is 10 - 9 m-10 -6On the one hand, the microstructure 5 of the micro-nano scale has a lower effective thermal conductivity, which can increase the thermoelectric figure of merit, thereby increasing the thermoelectric conversion efficiency or cooling power of the thermoelectric conversion device; on the other hand, the micro-nano scale will increase the thermal rectification effect, which increases the temperature difference at both ends of the device, thereby increasing the thermoelectric conversion efficiency or cooling power of the thermoelectric conversion device.

[0049] As an optional embodiment, the thickness of the microstructure 5 is 10 nm to 10 μm. For example, the thickness of the microstructure 5 may be 10 nm, 20 nm, 50 nm, 100 nm, 250 nm, 500 nm, 750 nm, 1 μm, 2.5 μm, 5 μm, 7.5 μm or 10 μm.

[0050] In this embodiment, the material of the microstructure 5 is an insulating layer, and the thermal conductivity of the microstructure 5 is 10W / (mK)-300W / (mK). As an optional embodiment, the material of the microstructure 5 includes but is not limited to boron nitride, aluminum nitride, silicon nitride or silicon carbide. The material of the first heat conducting plate 1 or the second heat conducting plate 4 can be the same as the material of the microstructure 5 located thereon.

[0051] In one embodiment, see Figure 1-Figure 4 , the number of the microstructures 5 located on one side surface of the first heat conducting plate 1 or the second heat conducting plate 4 is multiple, one side surface of the first heat conducting plate 1 or the second heat conducting plate 4 has a microstructure setting area 51, and the orthographic projection of the first electrode 2 on the surface of the first heat conducting plate 1 is located in the microstructure setting area 51 or overlaps with the microstructure setting area 51.

[0052] For details, see Figure 3-Figure 4 , a plurality of the microstructures 5 are arranged in an array in the microstructure setting area 51; or, a plurality of the microstructures 5 are arranged in parallel in the microstructure setting area 51. The distance between adjacent microstructures 5 is 0-1 mm; for example, the distance between adjacent microstructures 5 can be 0, 1 μm, 5 μm, 10 μm, 20 μm, 50 μm, 100 μm, 200 μm, 500 μm, 750 μm or 1 mm.

[0053] Preferably, when the third side 41 is provided with a plurality of the microstructures 5, the third side 41 has a microstructure sub-setting area arranged opposite to the second electrode 3, some of the microstructures are arranged in an array in the microstructure sub-setting area, or some of the microstructures are arranged in parallel in the microstructure sub-setting area, or the microstructure sub-setting area is provided with a microstructure covering the microstructure sub-setting area and the microstructures of adjacent microstructure sub-setting areas are parallel to each other.

[0054] In another embodiment, the number of the microstructures located on one side surface of the first heat conducting plate 1 or the second heat conducting plate 4 is one, and the orthographic projection of the first electrode 2 on the surface of the first heat conducting plate 1 is located within the orthographic projection of the microstructure 5 on the first heat conducting plate 1 or coincides with the orthographic projection of the microstructure 5 on the first heat conducting plate 1.

[0055] It should be understood that when the microstructure 5 is located on two side surfaces, three side surfaces or four side surfaces of the first side 11, the second side 12, the third side 41 and the fourth side 42, the arrangement of the microstructures 5 located on different sides may be the same or different.

[0056] Example 2

[0057] The present invention also provides a method for preparing a thermoelectric conversion device, comprising:

[0058] S1. Provide a first heat conducting plate 1 and a second heat conducting plate 4, wherein the first heat conducting plate 1 has a first side 11 and a second side 12 opposite to each other, and the second heat conducting plate 4 has a third side 41 and a fourth side 42 opposite to each other, and at least one of the first side 11, the second side 12, the third side 41 and the fourth side 42 is formed with a microstructure 5, and the microstructure 5 has a first surface and a second surface opposite to each other, and the area of ​​the first surface is smaller than the area of ​​the second surface;

[0059] S2, providing a first electrode 2 and a second electrode 3; disposing a P-type element 6 between the first electrode 2 and a portion of the second electrode 3, and disposing an N-type element 7 between the first electrode 2 and another portion of the second electrode 3;

[0060] S3. The first heat conducting plate 1 is arranged on the side of the first electrode 2 away from the P-type element 6, and the second heat conducting plate 4 is arranged on the side of the second electrode 3 away from the P-type element 6, and the direction of the microstructure 5 from the first surface to the second surface is the same as the direction from the first heat conducting plate 1 to the second heat conducting plate 4.

[0061] The preparation method of the thermoelectric conversion device achieves directional regulation of the heat flow in the thermoelectric conversion device by forming a microstructure, thereby increasing the temperature difference between the two ends of the thermoelectric conversion device, and further increasing the thermoelectric conversion efficiency or cooling power of the thermoelectric conversion device.

[0062] Furthermore, forming the microstructure includes but is not limited to 3D printing, laser ablation, photolithography plus etching or precision casting processes.

[0063] Example 3

[0064] This embodiment provides a thermoelectric conversion system, including the thermoelectric conversion device provided in Embodiment 1. The thermoelectric conversion system has all the advantages of the thermoelectric conversion device, which will not be described in detail here.

[0065] Obviously, the above embodiments are merely examples for the purpose of clear explanation, and are not intended to limit the implementation methods. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived therefrom are still within the scope of protection of the invention.

Claims

1. A thermoelectric conversion device, characterized in that: include: a first electrode; A P-type element and an N-type element located on one side surface of the first electrode and electrically connected to the first electrode; A second electrode located respectively at a side of the P-type element and the N-type element away from the first electrode; A first heat conducting plate located at the first electrode away from the P-type element and the N-type element; A second heat conducting plate located at the second electrode away from the P-type element and the N-type element; A microstructure, wherein the microstructure is located on a side surface of the first heat conducting plate facing away from the first electrode, and / or, located on a side surface of the first heat conducting plate facing the first electrode and in contact with the first electrode, and / or, located on a side surface of the second heat conducting plate facing away from the second electrode, and / or, located on a side surface of the second heat conducting plate facing the second electrode and in contact with the second electrode; the microstructure is a boss structure having a first surface and a second surface that are relatively arranged, the area of ​​the first surface is smaller than the area of ​​the second surface, and the direction from the first surface to the second surface is the same as the direction from the first heat conducting plate to the second heat conducting plate.

2. The thermoelectric conversion device according to claim 1, characterized in that: The thickness of the microstructure is of micro-nano scale.

3. The thermoelectric conversion device according to claim 2, characterized in that: The thickness of the microstructure is 10 nm to 10 μm.

4. The thermoelectric conversion device according to any one of claims 1 to 3, characterized in that: The number of the microstructures located on one side surface of the first heat conducting plate or the second heat conducting plate is one or more; and the plurality of microstructures are arranged in an array or in parallel.

5. The thermoelectric conversion device according to any one of claims 1 to 3, characterized in that: The material of the microstructure is an insulating layer, and the thermal conductivity of the microstructure is 10 W / (mK)-300 W / (mK).

6. The thermoelectric conversion device according to claim 5, characterized in that: The material of the microstructure includes boron nitride, aluminum nitride, silicon nitride or silicon carbide.

7. The thermoelectric conversion device according to any one of claims 1 to 3, characterized in that: The area of ​​the first surface is greater than zero.

8. The thermoelectric conversion device according to claim 7, characterized in that: The shape of the boss structure includes a frustum or a prism.

9. The thermoelectric conversion device according to claim 1, characterized in that: A plurality of microstructures arranged in parallel are provided on a side surface of the first heat conducting plate facing away from the first electrode and a side surface of the second heat conducting plate facing the second electrode.

10. A method for preparing a thermoelectric conversion device, characterized in that: include: A first heat conducting plate and a second heat conducting plate are provided, wherein the first heat conducting plate has a first side and a second side opposite to each other, and the second heat conducting plate has a third side and a fourth side opposite to each other, and at least one of the first side, the second side, the third side and the fourth side is formed with a microstructure, wherein the microstructure is a boss structure having a first surface and a second surface opposite to each other, and an area of ​​the first surface is smaller than an area of ​​the second surface; Providing a first electrode and a second electrode; disposing a P-type element between the first electrode and a portion of the second electrode, and disposing an N-type element between the first electrode and another portion of the second electrode; The first heat conducting plate is arranged on a side of the first electrode away from the P-type element, and the second heat conducting plate is arranged on a side of the second electrode away from the P-type element, and the direction of the microstructure from the first surface to the second surface is the same as the direction from the first heat conducting plate to the second heat conducting plate.

11. The method for preparing a thermoelectric conversion device according to claim 10, characterized in that: The microstructure is formed by 3D printing, laser ablation, photolithography plus etching or precision casting.

12. A thermoelectric conversion system, characterized in that: include: The thermoelectric conversion device according to any one of claims 1 to 9.

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