Universal metrology documentation, protocols and processes for maskless lithography systems

Abstract

Embodiments of the present disclosure relate to a system, software application, and method of a lithography process that updates one or more of a mask pattern, a maskless lithography device parameter, a lithography process parameter using a document readable by each component of a lithography environment. The document readable by each component of the lithography environment stores and shares textual information and facilitates communication between components of the lithography environment to update a mask pattern corresponding to a pattern to be written, calibrate a maskless lithography device of the lithography environment, and correct a process parameter of the lithography process to accurately write the mask pattern on successive substrates.

Description

Technical Field

[0001] Embodiments of this disclosure generally relate to lithography systems. More specifically, embodiments of this disclosure relate to a system, software application, and method for a lithography process to update one or more of mask patterns, maskless lithography apparatus parameters, and lithography process parameters using documentation readable by each component of the lithography environment. Background Technology

[0002] Maskless lithography is used in the manufacture of semiconductor devices, such as for back-end processing of semiconductor devices, and for display devices, such as liquid crystal displays (LCDs). To write the feature pattern of a mask pattern into the photoresist disposed above the substrate, in a conventional lithography environment, measurements of the feature pattern are compiled, the mask pattern is updated based on the compiled measurements, and the updated feature pattern of the mask pattern is written onto the photoresist of a separate substrate. This requires separate document formats and protocols between each component of the lithography environment. Furthermore, updating the parameters of the maskless lithography apparatus and the lithography process requires separate document formats and protocols between each component of the lithography environment. Using separate document formats and protocols between each component of the lithography environment introduces errors during format and protocol conversions, which can lead to inaccuracies in the developed pattern, processing delays, and reduced yield.

[0003] Therefore, there is a need in the art for a lithography environment, software application, and method for a lithography process to update one or more of the mask pattern, maskless lithography apparatus parameters, and lithography program parameters using documents readable by each component of the lithography environment. Summary of the Invention

[0004] In one embodiment, a method is provided. The method includes creating a design document and a universal metrology file (UMF) document using a virtual mask apparatus of a lithography environment. The lithography environment includes a controller operable to connect to the virtual mask apparatus, a metrology apparatus, and a maskless lithography apparatus. Each of the controller, the virtual mask apparatus, the metrology apparatus, and the maskless lithography apparatus is capable of reading the UMF document. The design document is transmitted to the maskless lithography apparatus, and the UMF document is transmitted to the metrology apparatus. A lithography process is performed, the lithography process including: patterning a first substrate using the maskless lithography apparatus according to the design document, and transmitting the first substrate patterned by the maskless lithography apparatus to the metrology apparatus. The metrology apparatus performs one or more metrology processes according to instructions in the UMF document and populates the UMF document with metrological measurements. A first portion of one or more application programs is executed by the metrology apparatus according to instructions in the UMF document and is compiled with at least one of a calibration model and calibration offset data in the UMF document. The UMF document is sent to at least one of a virtual mask apparatus and a maskless lithography apparatus. The design document is updated using at least one of the virtual mask apparatus and the maskless lithography apparatus.

[0005] In another embodiment, a non-transitory computer-readable medium is provided. The non-transitory computer-readable medium stores instructions that, when executed by a processor, cause a computer system to perform the following steps: creating a design document and a Universal Metrology Document (UMF) document using a virtual mask apparatus of a lithography environment. The lithography environment includes a controller operable to connect to the virtual mask apparatus, a metrology apparatus, and a maskless lithography apparatus. The UMF document is readable by each of the controller, the virtual mask apparatus, the metrology apparatus, and the maskless lithography apparatus. The design document is transferred to the maskless lithography apparatus, and the UMF document is transferred to the metrology apparatus. A lithography process is performed, comprising: patterning a first substrate using the maskless lithography apparatus, and transferring the first substrate patterned by the maskless lithography apparatus to the metrology apparatus. The metrology apparatus performs one or more metrology processes according to the instructions in the UMF document and populates the UMF document with metrological measurements. A first portion of one or more application programs is executed by the metrology apparatus according to the instructions in the UMF document and compiles at least one of a calibration model and calibration offset data in the UMF document. The UMF document is sent to at least one of a virtual mask device and a maskless lithography device. Using at least one of the virtual mask device and the maskless lithography device, at least one of the design document, lithography process parameters, and maskless lithography device parameters is updated based on at least one of the correction model and the calibration offset data.

[0006] In another embodiment, a non-transitory computer-readable medium is provided. The non-transitory computer-readable medium includes a text-based markup language format that is readable and operable for transmission between a virtual mask apparatus, a metrology device, a maskless lithography apparatus, and a controller of a lithography environment. Multiple portions of the non-transitory computer-readable medium have elements operable to be retained and stored in the non-transitory computer-readable medium by each of the virtual mask apparatus, the metrology device, the maskless lithography apparatus, and the controller. The multiple portions include an identification portion, a metrology instruction portion, an application program instruction portion, an alignment mark portion, an image storage portion, and a metrology measurement portion. Attached Figure Description

[0007] Therefore, the above-described features of this disclosure can be understood in detail by referring to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate exemplary embodiments only and should not be considered as limiting of their scope, and other equivalent embodiments may be permitted.

[0008] Figure 1 This is a schematic diagram of the photolithography environment according to the embodiments described herein.

[0009] Figure 2 This is a perspective view of an exemplary maskless lithography apparatus according to the embodiments described herein.

[0010] Figure 3 This is a schematic diagram of a mask pattern according to the embodiments described herein.

[0011] Figure 4 This is a schematic diagram of the interface according to the implementation method described herein.

[0012] Figure 5 This is a flowchart of a maskless lithography method according to the embodiments described herein.

[0013] For ease of understanding, the same reference numerals are used where possible to denote common elements in the figures. It is contemplated that elements and features of one embodiment can be advantageously incorporated into other embodiments without further explanation. Detailed Implementation

[0014] Embodiments of this disclosure generally relate to lithography systems. More specifically, embodiments of this disclosure relate to a system, software application, and method for a lithography process to update one or more of mask patterns, maskless lithography apparatus parameters, and lithography process parameters using documents readable by each component of the lithography environment. The documents readable by each component of the lithography environment store and share text data and facilitate communication between the various components of the lithography environment, thereby updating the mask pattern corresponding to the pattern to be written, calibrating the maskless lithography apparatus of the lithography environment, and correcting the process parameters of the lithography process to accurately write the mask pattern onto a continuous substrate.

[0015] Figure 1 This is a schematic diagram of a lithography environment 100. As shown, the lithography environment 100 includes, but is not limited to, a virtual mask device 102, a metrology device 104, an evaluation device 106, a maskless lithography device 108, a controller 110, multiple communication links 101, and a transmission system 103. As further described herein, the evaluation device 106 is operable to perform one or more computational, simulation, or modeling processes to compile at least one of a correction model or calibration offset data as further described herein. Additional lithography environment devices (i.e., the virtual mask device 102, the metrology device 104, the evaluation device 106, and the maskless lithography device 108) may be included in the lithography environment 100. Each lithography environment device is operable to be connected to each other via communication links 101. Each lithography environment device is operable to be connected to the controller 110 via communication links 101. Alternatively or additionally, each lithography environment device may communicate indirectly by first communicating with the controller 110, and then the controller communicating with the relevant lithography environment device. The lithography environment 100 can be located in the same area or production facility, or each lithography environment facility can be located in a different area.

[0016] Each of the plurality of lithography environment apparatuses is additionally indexed by the method 500 described herein. Each of the virtual mask apparatus 102, metrology apparatus 104, evaluation apparatus 106, maskless lithography apparatus 108, and controller 110 includes an onboard processor and memory configured to store instructions corresponding to any part of the method 500 described below. Communication link 101 may include at least one of the following: wired connection, wireless connection, satellite connection, etc. According to embodiments further described herein, communication link 101 includes sending and receiving Universal Metrology Documents (UMFs) or any other documents for storing data. Communication link 101 may include temporarily or permanently storing documents or data in the cloud before transmitting or copying the documents or data to the lithography system tools.

[0017] The maskless lithography apparatus 108 and the metrology device 104 are connected via a transport system 103. The transport system is operable to transport a substrate between the maskless lithography apparatus 108 and the metrology device 104. In one embodiment, which may be combined with other embodiments described herein, the transport system 103 may include a robot or other device operable to a controller 110 to transport a patterned wafer. In one embodiment, which may be combined with other embodiments described herein, the transport system 103 may be physically operated by a user.

[0018] Controller 110 includes a central processing unit (CPU) 112, support circuitry 114, and memory 116. CPU 112 can be any type of computer processor suitable for controlling lithography environment apparatus in an industrial setting. Memory 116 is coupled to CPU 112. Memory 116 can be one or more readily available memories, such as random access memory (RAM), read-only memory (ROM), floppy disk, hard disk, or any other form of local or remote digital storage. Support circuitry 114 is coupled to CPU 112 for conventionally supporting the processor. This circuitry includes cache, power supply, clock circuitry, input / output circuitry, subsystems, etc. Controller 110 may include CPU 112 coupled to input / output (I / O) devices included in auxiliary circuitry 114 and memory 116.

[0019] Memory 116 may include one or more software applications, such as control software programs. Memory 116 may also include stored media data used by CPU 112 to execute the methods 500 described herein. CPU 112 may be a hardware unit or a combination of hardware units capable of executing software applications and processing data. In some configurations, CPU 112 includes a central processing unit (CPU), a digital signal processor (DSP), an application-specific integrated circuit (ASIC), and / or a combination of these units. CPU 112 is typically configured to execute one or more software applications and process stored media data, which may each be included in memory 116. Controller 110 controls the transfer of data and documents with various lithography environment devices. Memory 116 is configured to store instructions corresponding to any operation of method 500 according to the embodiments described herein.

[0020] Figure 2This is a perspective view of an exemplary maskless lithography apparatus 108 (e.g., a digital lithography system) that can benefit from the embodiments described herein. The maskless lithography apparatus 108 includes a platform 214 and a processing unit 204. The platform 214 is supported by a pair of tracks 216. A substrate 220 is supported by the platform 214. The platform 214 is operable to move along the pair of tracks 216. An encoder 218 is coupled to the platform 214 to provide position information of the platform 214 to a controller 222.

[0021] Controller 222 is typically designed to facilitate the control and automation of the processing techniques described herein. Controller 222 may be coupled to or communicate with processing unit 204, platform 214, and encoder 218. Processing unit 204 and encoder 218 may provide information about substrate processing and substrate alignment to controller 222. For example, processing unit 204 may provide information to controller 222 to alert it that substrate processing is complete. Controller 222 facilitates the control and automation of maskless lithography processes based on design documents provided by interface 230. A design document (or computer instructions), which may be referred to as an imaging design document, may be read by controller 222 to determine the tasks to be performed on the substrate. The design document (e.g., Figure 4 The design document 420 includes mask pattern data. The mask pattern data includes mask pattern 302 ( Figure 3 (as shown), and codes for monitoring and controlling processing time and substrate position. Mask pattern 302 corresponds to the pattern to be written into photoresist using electromagnetic radiation.

[0022] Substrate 220 comprises any suitable material used as part of a flat panel display, such as glass. In other embodiments that may be combined with other embodiments described herein, substrate 220 is made of other materials capable of being used as part of a flat panel display. Substrate 220 has a film layer formed thereon, for example patterned by pattern etching, and a photoresist layer formed on the film layer to be patterned, the photoresist layer being sensitive to electromagnetic radiation (e.g., UV or deep UV "light"). Positive photoresist includes a portion of the photoresist that, when exposed to radiation, is soluble in a photoresist developer applied to the photoresist after the pattern has been written into the photoresist using electromagnetic radiation. Negative photoresist includes a portion of the photoresist that, when exposed to radiation, is insoluble in a photoresist developer applied to the photoresist after the pattern has been written into the photoresist using electromagnetic radiation. The chemical composition of the photoresist determines whether it is a positive or negative photoresist. Examples of photoresists include, but are not limited to, diazonaphthoquinone, phenolic resin, poly(methyl methacrylate), poly(methyl glutarate), and at least one of SU-8. After the photoresist is exposed to electromagnetic radiation, it is developed to leave a patterned photoresist layer on the underlying film. Then, using the patterned photoresist, the underlying film is patterned and etched through openings in the photoresist to form part of the electronic circuitry of the display panel.

[0023] Processing unit 204 is supported by support member 208 such that processing unit 204 spans a pair of tracks 216. Support member 208 provides an opening 212 to allow the pair of tracks 216 and platform 214 to pass beneath processing unit 204. Processing unit 204 is a pattern generator configured to receive mask pattern data from interface 230 and expose photoresist in a maskless lithography process using one or more image projection systems 206 operable to project a write beam of electromagnetic radiation onto substrate 220. The pattern generated by processing unit 204 is projected by image projection system 206 to expose the photoresist of substrate 220 to a mask pattern 302 written into the photoresist. In one embodiment, which can be combined with other embodiments described herein, each image projection system 206 includes a spatial light modulator to modulate incident light to produce a desired image. Each spatial light modulator includes multiple electrically addressable elements that can be individually controlled. Based on the mask pattern data and corrections provided by the position correction model created by the method 500 described herein, each electrically addressable element can be in an "ON" or "OFF" position. When light reaches the spatial light modulator, the electrically addressable elements in the "ON" position project multiple write beams onto a projection lens (not shown). The projection lens then projects the write beams onto substrate 220. Electrically addressable elements include, but are not limited to, digital micromirrors, liquid crystal displays (LCDs), liquid crystal on silicon (LCoS) devices, ferroelectric liquid crystal on silicon (FLCoS) devices, micro shutters, microLEDs, VCSELs, or any solid-state emitter that emits electromagnetic radiation.

[0024] Figure 3This is a schematic diagram of a mask pattern 302 written into photoresist using processing unit 204. The mask pattern data includes the mask pattern 302. The mask pattern 302 includes one or more polygons 304 corresponding to portions of the photoresist to be exposed to electromagnetic radiation projected by processing unit 204. It should be understood that the one or more polygons 304 can be polygons of any shape, such that the exposed portions form one or more different features in the photoresist. Each of the one or more features of the exposed photoresist includes one or more target values, such as critical dimensions. The mask pattern data of design document 420 also includes one or more metrology alignment marks 306 to be exposed. Each metrology alignment mark 306 includes x and y coordinates so that metrology device 104 can be aligned to perform recipe-based measurements at defined locations (such as one or more metrology sites 308). The mask pattern data of design document 420 includes one or more metrology sites 308 that will be measured by metrology device 104 after the substrate 220 is processed via maskless lithography apparatus 108. Each measurement point 308 includes an x-coordinate and a y-coordinate. After the substrate 220 is processed by the maskless photolithography apparatus 108, the patterned substrate 220 can be further processed, such as developing the photoresist.

[0025] Figure 4 This is a schematic diagram of interface 230. Interface 230 includes a computing device 410 and an input / output (I / O) device 430. Interface 230 can be used to optimize, verify, and update at least one of a design document (e.g., design document 420). Interface 230 can be used to optimize, verify, and update design document 420 based on instructions and readable data from a Universal Measurement Document (UMF) provided by at least one of the virtual mask device 102, the measurement device 104, the evaluation device 106, and the controller 110. The optimization, verification, and updating of design document 420 based on the UMF document are further described in the operation of method 500.

[0026] The computing device 410 may include a controller 412, a network interface 414, and a memory 416. The controller 412 retrieves and executes programming data stored in the memory 416 and coordinates the operation of other system components. Similarly, the controller 412 stores and retrieves application data residing in the memory 416. The controller 412 may be one or more central processing units (CPUs).

[0027] Memory 416 may store instructions and logic to be executed by controller 412. Furthermore, memory 416 may be one or more of random access memory (RAM) and non-volatile memory (NVM). NVM may be a hard disk, network attached storage (NAS), and removable storage devices, etc. Additionally, memory 416 may include design application program 418 and design documents 420.

[0028] Design application 418 optimizes, validates, and updates the design data of design document 420 at least once. Design application 418 may be controlled by controller 412 to optimize and / or update the design data of design document 420.

[0029] Design document 420 can be stored in memory 416 and accessed by controller 412 and design application 418. Design document 420 includes mask pattern data, which is interpreted by controller 222 to pattern photoresist disposed on substrate 220. Design document 420 can be provided in different formats. For example, design document 420 can be in either GDS or OASIS format. The mask pattern data in design document 420 includes mask pattern 302, metrology alignment marks 306, and metrology points 308. Other data included in the design document includes exposure dose data, exposure focus data, and calibration data between image projection systems (IPS). Exposure dose data corresponds to the dose of the write beam to be projected onto the photoresist. Exposure focus data corresponds to the focus of each image projection system 206. Calibration data between IPS corresponds to the stitching of the image projection systems 206 such that the entire mask pattern 302 is projected. Design document 420 can be in bitmap or similar document format.

[0030] I / O device 430 may include one or more of a keyboard, display device, mouse, audio device, and touch screen. I / O device 430 can be used to input information to and / or output data from interface 230. For example, a user can use a keyboard and pointing device to generate and / or adjust elements of design document 420. In another embodiment that may be combined with other embodiments described herein, I / O device 430 is coupled to controller 110 via network interface 414 communicating with communication link 101. Interface 230 coupled to the controller provides a computer-integrated manufacturing (CIM) program for controlling the overall operation of method 500 described herein using a computer.

[0031] Figure 5This is a flowchart of a maskless lithography method 500. In operation 501, a design document 420 is created by a virtual mask device 102. The design document 420 includes at least mask pattern data, a mask pattern 302, one or more metrology alignment marks 306, one or more metrology points 308, exposure dose data, exposure focus data, and calibration data between image projection systems (IPS). The UMF document includes one or more element sections. Each element can be read and populated by at least the virtual mask device 102, metrology device 104, evaluation device 106, maskless lithography device 108, and controller 110. The UMF document is formatted in a user- and machine-readable text-based markup language and can be used to retain and store element sections.

[0032] The UMF document includes, but is not limited to, an identification section, a measurement instruction section, an application instruction section, an alignment mark section, an image storage section, and a measurement section. Elements of each section can be identified by the lithography environment apparatus and controller 110. Elements of the identification section include, but are not limited to, a substrate identifier corresponding to the substrate 220 to be processed, a CIM identifier corresponding to the CIM program, and a layer identifier corresponding to the photoresist layer to be developed.

[0033] The metrology instruction section defines which metrology procedure the metrology device 104 will use to determine a specified metrology (e.g., one or more target values ​​for one or more features of the exposed photoresist, such as critical dimensions). Elements of the metrology section include, but are not limited to, box-in-box metrology procedures, critical dimension (CD) metrology procedures, resist sidewall angle metrology procedures, edge-to-edge metrology procedures, sector metrology procedures, via metrology procedures, and image metrology procedures.

[0034] The box-in-box metrology program determines the positional error of the exposed photoresist features. The CD metrology program determines the size of the feature lines or spacing of the exposed photoresist. The resist sidewall angle metrology program determines the sidewall angles of the developed photoresist. The edge-to-edge metrology program determines the distance between two edges of adjacent patterns in the exposed photoresist. The sector metrology program determines the edge variation of the pattern. The via metrology program determines the size of the via pattern, which is defined by the horizontal or vertical critical dimensions of the feature, or by the radius and ellipticity of the feature. The image metrology program determines multiple image metrologies, such as image grayscale, image contrast, etc. Each element has a metrology formula corresponding to the metrology program to be performed by the metrology device 104.

[0035] The application instructions section defines which application will be used by either the metrology device 104 or the evaluation device 106. Elements of the application instructions section include, but are not limited to, a total pitch application, an overlay application, a maskless lithography device matching application, an IPS rotation application, a pixel pitch application, a diversity application, a dose calculation application, a focus calculation application, a top and bottom CD application, a CD uniformity application, a tolerance application, and a mura analysis application.

[0036] The overall pitch application adjusts the overall scaling and orthogonality error of substrate 220. The overlay application adjusts printing differences between two layers of photoresist by evaluating one or more calculations, simulations, or modeling procedures performed by device 106. The maskless lithography apparatus matching application compensates for printing signature differences between multiple maskless lithography apparatuses 108. The IPS rotation application determines the rotation of the IPS relative to the scan direction. The pixel pitch application determines the spacing (i.e., pixel pitch) between electrically addressable elements observed on substrate 220. The diversity application determines the optimal pixel blending diversity based on the printed image attributes. The dose calculation application determines the optimal nominal dose based on the photoresist exposure under multiple dose conditions. The focus calculation application determines the optimal nominal focus based on the photoresist exposure under several focus conditions. The top and bottom CD application optimizes lithography process parameters and mask pattern data based on measurements of the top and bottom CD of the exposed photoresist features. The CD uniformity application optimizes lithography process parameters and mask pattern data to improve the CD uniformity of the exposed photoresist features. The tolerance application determines nominal dose and focus values ​​based on photoresist exposure under several dose and focus conditions to optimize tolerances based on any metrology (e.g., CD). The spot analysis application uses one or more metrologies to identify spots and optimizes lithography process parameters or mask pattern data to minimize spots. Spots (i.e., turbidity) are used to describe uneven exposure of substrate 220.

[0037] Each application compiles at least one of the calibration model and calibration offset data into an element of the application instruction section based on metrological data stored in the UMF document. In one embodiment, which can be combined with other embodiments described herein, the calibration model or calibration offset data embedded in the UMF document is stored in a calibration model document. In addition to the UMF document, interface 230 can read the calibration model document to optimize, verify, and update at least one of the design document 420, and to update photolithography process parameters for subsequent layers of photoresist on substrate 220 or subsequent substrates.

[0038] The alignment mark section includes two or more metrology alignment marks 306, each having an x-coordinate and a y-coordinate, thereby allowing the metrology device 104 to be aligned to perform recipe-based measurements at defined locations (such as one or more metrology points 308). The image storage instruction section includes image storage instructions to be executed by the metrology device 104. The image storage instruction section includes, but is not limited to, image format elements, image size elements, and pixel size elements. The metrology measurement section includes one or more metrology points 308 having x-coordinates and y-coordinates, allowing the metrology device 104 to perform at least one metrology process at the metrology point 308 according to the metrology instruction section and the application instruction section. The metrology measurement section includes elements that can be filled according to the metrology instruction section and the application instruction section. These fillable elements can be read at least by the virtual mask device 102, the metrology device 104, the evaluation device 106, the maskless lithography device 108, and the controller 110.

[0039] In operation 502, design document 420 is transferred from virtual mask device 102 to maskless lithography device 108, and UMF document is transferred to metrology device 104. In operation 503, a lithography process is performed to expose substrate 220 to a mask pattern of mask pattern data included in design document 420. Optionally, after the lithography process in operation 503, substrate 220 may be further processed, for example, by developing and / or etching photoresist to form a pattern on substrate 220. In operation 504, patterned substrate 220 is transferred to metrology device 104. In operation 505, metrology device 104 reads UMF document and executes one or more procedures according to metrology instruction portion and image storage portion. One or more procedures are executed according to metrology instruction portion and image storage portion corresponding to identification portion of UMF document. In operation 506, image storage portion and metrology measurement portion are filled and stored in UMF document according to metrology measurement values.

[0040] In operation 507, one or more applications are executed to compile at least one of the correction model and calibration offset data in the UMF document. The one or more applications are executed according to the application instruction portion of the UMF document. In one embodiment, which may be combined with other embodiments described herein, each of the one or more applications is executed by metrology device 104. In another embodiment, which may be combined with other embodiments described herein, the UMF document is sent to evaluation device 106, and each of the one or more applications is executed by metrology device 104. In yet another embodiment, according to the application instruction portion of the UMF document, a first portion of the one or more applications is executed by metrology device 104, the UMF document is sent to evaluation device 106, and a second portion of the one or more applications is executed by evaluation device 106 to compile at least one of the correction model and calibration offset data in the UMF document. Evaluation device 106 is operable to store updated lithography process values ​​(e.g., updated exposure dose data, updated exposure focus data, and updated inter-IPS calibration data) into the UMF document, such that interface 230 can be operated to adjust lithography process parameters for subsequent photoresist layers or subsequent substrates of substrate 220.

[0041] In operation 508, the UMF document is transferred from at least one of the metrology device 104 and the evaluation device 106 to at least one of the virtual mask device 102 and the maskless lithography device 108. In operation 509, the design document 420 is updated by at least one of the virtual mask device 102 and the maskless lithography device 108 based on one of the calibration model and calibration offset data stored in the UMF document or the calibration model document.

[0042] The calibration offset data includes parameters of the maskless lithography apparatus 108 to be updated. These parameters include, but are not limited to, dose, focus, variability, numerical aperture (NA), illumination coherence, and illumination shape for each IPS. The calibration model may include parameters corresponding to positional corrections at each (x, y) location on the substrate 220, as well as focus and dose corrections as functions of the (x, y) location on the substrate 220. The parameters of the calibration model may include global or local corrections.

[0043] Global corrections include, but are not limited to, global scaling, shifting, and rotation corrections as a function of (x, y) position. Global corrections may also include focus and dose adjustments for each IPS. Local corrections may include local offsets, which may be stored as correction vectors for each (x, y) grid point or as a polynomial function. Local corrections may be applied to each spatial light modulator based on parameters provided by the mask pattern data and the correction model, where electrically addressable elements may be in an "ON" or "OFF" position. The "ON" and "OFF" conditions of electrically addressable elements may also be adjusted during exposure for local dose adjustment. Local dose variations can be achieved by dynamically adjusting the energy falling at specific locations on substrate 220. In one embodiment, which may be combined with other embodiments described herein, global corrections are applied to mask pattern 302 before mask pattern data is transmitted to each spatial light modulator. In another embodiment, which may be combined with other embodiments described herein, one or more global or local CD corrections are applied to mask pattern 302 before mask pattern data is transmitted to each spatial light modulator. The calibration value is identified by interface 230 using the metrological measurements stored in the UMF document and the calibration model and calibration offset data stored in the UMF document. These calibration models and calibration offset data are created using the metrological measurements stored in the UMF document according to each application element in the application instruction section.

[0044] In summary, systems, software applications, and methods for lithography processes are provided for updating one or more of the following: mask patterns, maskless lithography apparatus parameters, and lithography process parameters, using readable documentation for each component of the lithography environment. Systems, software applications, and methods utilizing UMF documentation have been described herein. UMF documentation has a format with a text-based markup language that is readable and operable for transmission between the virtual mask apparatus, metrology apparatus, maskless lithography apparatus, evaluation apparatus, and controller of the lithography environment described herein. Multiple sections of the UMF documentation have elements operable to be retained and stored in a non-transitory computer-readable medium by each of the virtual mask apparatus, metrology apparatus, maskless lithography apparatus, evaluation apparatus, and controller. Documents that can be read by each component of the lithography environment can be stored and shared for text data, and communication between the components of the lithography environment can be facilitated to update the mask pattern corresponding to the pattern to be written, calibrate the maskless lithography apparatus of the lithography environment, and correct the process parameters of the lithography process to accurately write the mask pattern on a continuous substrate.

Claims

1. A method of maskless lithography, comprising the steps of: creating a design file and a universal metrology file with a virtual mask device of a lithography environment, wherein: the lithography environment comprises a controller that is operable to connect to the virtual mask device, a metrology device, and a maskless lithography device; and the universal metrology file is readable by each of the controller, the virtual mask device, the metrology device, and the maskless lithography device; transferring the design file to the maskless lithography device and the universal metrology file to the metrology device; performing a lithography process, comprising: patterning a first substrate with the maskless lithography device based on the design file, and transferring the first substrate patterned by the maskless lithography device to the metrology device; performing one or more metrology processes with the metrology device according to instructions of the universal metrology file, and populating the universal metrology file with metrology measurements; performing a first portion of one or more applications with the metrology device according to instructions of the universal metrology file to compile at least one of a correction model and calibration offset data in the universal metrology file; transferring the universal metrology file to at least one of the virtual mask device and the maskless lithography device; and updating the design file with at least one of the virtual mask device and the maskless lithography device.

2. The method of claim 1, wherein a format of the universal metrology file comprises a text-based markup language that is user and machine readable and operable to preserve and store element portions.

3. The method of claim 2, wherein the element portions of the universal metrology file comprise an identification portion, a metrology instruction portion, an application instruction portion, an alignment mark portion, an image storage portion, and a metrology measurement portion.

4. The method of claim 1, wherein the lithography environment comprises an evaluation device connected to the controller, and wherein: the evaluation device performs a second portion of one or more applications according to instructions of the universal metrology file to compile at least one of the correction model and the calibration offset data in the universal metrology file or a correction model file.

5. The method of claim 4, wherein the evaluation device is operable to perform one or more computational, simulation, or modeling processes to compile at least one of the correction model or the calibration offset data.

6. The method of claim 1, further comprising the step of: updating lithography process parameters and maskless lithography device parameters according to at least one of the correction model and the calibration offset data.

7. The method of claim 1, further comprising the step of: transferring an updated design file to the maskless lithography device and patterning a second substrate with the maskless lithography device.

8. A non-transitory computer readable medium storing instructions that, when executed by a processor, cause a computer system to perform the steps of: creating a design file and a universal metrology file with a virtual mask device of a lithography environment, wherein: the lithography environment comprises a controller that is operable to connect to the virtual mask device, a metrology device, and a maskless lithography device; and the universal metrology file is readable by each of the controller, the virtual mask device, the metrology device, and the maskless lithography device; transferring the design file to the maskless lithography device and the universal metrology file to the metrology device; performing a lithography process, comprising: patterning a first substrate with the maskless lithography device based on the design file, and transferring the first substrate patterned by the maskless lithography device to the metrology device; performing one or more metrology processes with the metrology device according to instructions of the universal metrology file, and populating the universal metrology file with metrology measurements; performing a first portion of one or more applications with the metrology device according to instructions of the universal metrology file to compile at least one of a correction model and calibration offset data in the universal metrology file; transferring the universal metrology file to at least one of the virtual mask device and the maskless lithography device; and updating the design file with at least one of the virtual mask device and the maskless lithography device. The lithography environment includes a controller operable to connect to the virtual mask device, metrology device, and maskless lithography device; and The universal metrology document is readable by each of the controller, the virtual mask device, the metrology device, and the maskless lithography device; transferring the design document to the maskless lithography device and transferring the universal metrology document to the metrology device; performing a lithography process including patterning a first substrate with the maskless lithography device and transferring the first substrate patterned by the maskless lithography device to the metrology device; performing one or more metrology processes with the metrology device according to instructions of the universal metrology document and populating the universal metrology document with metrology measurements; performing a first portion of one or more applications with the metrology device according to instructions of the universal metrology document to compile at least one of a correction model and calibration offset data in the universal metrology document; transferring the universal metrology document to at least one of the virtual mask device and the maskless lithography device; and updating at least one of the design document, lithography process parameters, and maskless lithography device parameters with at least one of the correction model and the calibration offset data with at least one of the virtual mask device and the maskless lithography device.

9. The non-transitory computer readable medium of claim 8, wherein the format of the universal metrology document includes a text-based markup language that is user and machine readable and operable to retain and store portions of elements.

10. The non-transitory computer readable medium of claim 8, wherein the lithography environment includes an evaluation device connected to the controller, and wherein: the evaluation device performs a second portion of one or more applications according to instructions of the universal metrology document to compile at least one of the correction model and the calibration offset data in the universal metrology document or a correction model document.

11. A non-transitory computer readable medium having instructions stored thereon that, when executed by a processor, cause a computer system to perform the steps of: creating a design document and a universal metrology document with a virtual mask device of a lithography environment, wherein the universal metrology document includes: a format having a text-based markup language that is readable and operable to transfer between a virtual mask device, a metrology device, a maskless lithography device, and a controller of a lithography environment; and a plurality of portions of elements operable to be retained and stored in the non-transitory computer readable medium by each of the virtual mask device, the metrology device, the maskless lithography device, and the controller, the plurality of portions including: an identification portion; a metrology instruction portion; an application instruction portion; an alignment mark portion; an image storage portion; and a metrology measurement portion; communicating the design file to the maskless lithography apparatus and communicating the generic metrology file to the metrology apparatus; performing a lithography process to expose a substrate to a mask pattern of mask pattern data included in the design file; communicating the patterned substrate to the metrology apparatus; the metrology apparatus reading the generic metrology file and performing one or more metrology processes with the metrology apparatus according to instructions of the generic metrology file; populating and storing the generic metrology file with metrology measurements; causing the metrology apparatus to execute one or more applications to compile at least one of a correction model and calibration offset data in the generic metrology file; communicating the generic metrology file to at least one of the virtual mask apparatus and the maskless lithography apparatus; and updating the design file with at least one of the virtual mask apparatus and the maskless lithography apparatus.

12. The non-transitory computer readable medium of claim 11, wherein the elements of the identification section include at least one of a substrate identifier corresponding to a substrate to be processed, a computer integrated manufacturing identifier corresponding to a computer integrated manufacturing program, and a layer identifier corresponding to a photoresist layer disposed on the substrate to be developed.

13. The non-transitory computer readable medium of claim 11, wherein the elements of the metrology instruction section include at least one of a critical dimension metrology process, a resist sidewall angle metrology process, an edge-to-edge metrology process, a sector metrology process, a via metrology process, and an image metrology process.

14. The non-transitory computer readable medium of claim 11, wherein the elements of the application instruction section include at least one of a total pitch application, a coverage application, a maskless lithography apparatus matching application, an image projection system rotation application, a pixel pitch application, a diversity application, a dose calculation application, a focus calculation application, a top and bottom critical dimension application, a critical dimension uniformity application, a tolerance application, and a blob analysis application.

15. The non-transitory computer readable medium of claim 11, wherein the elements of the image storage section include at least one of an image format element, an image size element, and a pixel size element.

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