A baffle device for ion etching fine-tuning machine

Abstract

The invention discloses a baffle device for an ion etching fine-tuning machine, and relates to the field of ion etching fine-tuning machines. The baffle device for an ion etching fine-tuning machine comprises: a baffle control power supply for controlling high-frequency voltage output; a baffle control data line for outputting the baffle control power supply output voltage to a baffle installation control circuit board; a baffle installation control circuit board for generating an electric field for each baffle when powered on, stopping the 23Ar ion flow at the baffle and exhausting it from a vacuum chamber as the vacuum is drawn away; a multi-channel baffle mechanism for separating the baffle from the outside; a baffle for parking 23Ar ions; a baffle control power supply connected to a baffle control data line. Compared with the prior art, the invention has the following beneficial effects: compared with the original baffle mechanism, the invention improves the switching speed from the original 10ms to 30ms to within 1ms. The original baffle is a mechanical structure, which will produce certain mechanical wear and has a relatively high failure rate; the existing electronic baffle will not produce mechanical wear.

Description

Technical Field

[0001] The invention relates to the field of ion etching fine-tuning machines, in particular to a baffle device for ion etching fine-tuning machines. Background Art

[0002] See also Figure 1 The principle of the original mechanism is to close the baffles on all the multi-way baffle mechanisms through the baffle control electromagnet (usually made of graphite or metal), generate a high-speed 3Ar ion flow through the ion gun and the etching power supply, and at the same time, the network analyzer tests the quartz crystal oscillator through the Π loop. If the test frequency is lower than the required frequency, the baffle control electromagnet opens the corresponding electromagnet. When the network analyzer tests the quartz crystal oscillator through the Π loop and the frequency value is equal to or greater than the required value, the baffle control electromagnet closes the corresponding electromagnet.

[0003] The existing baffle mechanism uses an electromagnet to drive a graphite baffle to block the high-speed ion flow and prevent the ion flow from etching the electrode. The disadvantage of this mechanism is that the electromagnet swings to drive the baffle to open and close to control the ion flow to etch the crystal. When the baffle is closed, the baffle blocks the ion flow from etching the crystal, but the ion flow will etch the baffle, so the baffle is a consumable with a lifespan of about one week. Some dust will also appear during the continuous swinging of the electromagnet and the graphite baffle, which can easily pollute the product and block the baffle operation mechanism, resulting in defective products. Improvement is needed. Summary of the invention

[0004] The object of the present invention is to provide a baffle device for an ion etching fine-tuning machine to solve the problems raised in the above-mentioned background technology.

[0005] To achieve the above object, the present invention provides the following technical solutions:

[0006] A baffle device for an ion etching fine-tuning machine, comprising:

[0007] The baffle controls the power supply, which is used to control the high-frequency voltage output;

[0008] A baffle control data line, used to output the baffle control power supply output voltage to the baffle mounting control circuit board;

[0009] The baffle is installed with a control circuit board, which is used to generate an electric field for each baffle when powered, so as to stop the 23Ar ion flow at the baffle and discharge it from the vacuum chamber as the vacuum is drawn away;

[0010] A multi-way baffle mechanism is used to separate the baffle from the outside world;

[0011] Baffle, used to park 23Ar ions;

[0012] The baffle control power supply is connected to the baffle control data line, the baffle control data line is connected to the baffle installation control circuit board, and the baffle is arranged in the inner cavity of the multi-way baffle mechanism;

[0013] The baffle control power supply includes:

[0014] Power supply module, used for supplying 220V AC power;

[0015] The first transformer and rectifier module is used to convert 220V AC power into DC power to supply power to the second integrated control module;

[0016] The second transformer and rectifier module is used to convert 220V AC power into DC power to supply power to the signal output module;

[0017] The first integrated control module is used to output a PWM signal to the second integrated control module after obtaining the central control signal;

[0018] The second integrated control module is used to output a stable sine wave after receiving the PWM signal, and obtain a stable control voltage after rectification; control the on and off of the etching channel, and the channel is blocked by the electric field to block the passage of ions, and the etching stops;

[0019] The signal output module is used to receive the microcomputer control and selectively output the voltage signal to the baffle control data line;

[0020] The power supply module is connected to the first transformer and rectifier module, the second transformer and rectifier module, and the first integrated electrical control module. The first transformer and rectifier module is connected to the second integrated control module. The first integrated control module is connected to the second integrated control module. The second integrated circuit control module is connected to the microcomputer. The second transformer and rectifier module is connected to the signal output module. The microcomputer is connected to the signal output module.

[0021] As a further solution of the present invention: the power supply module includes an interface CN1, a fuse F1, an inductor L1, a capacitor C1, a capacitor C4, a capacitor C22, and a capacitor C23. The input end of the interface CN1 is connected to 220V AC power. The third end of the interface CN1 is connected to the fuse F1. The first end of the interface CN1 is connected to the capacitor C1, the capacitor C4, and the capacitor C23. The other end of the fuse F1 is connected to the inductor L1. The other end of the inductor L1 is connected to the other end of the capacitor C1, the other end of the capacitor C4, the capacitor C22, and the first integrated control module. The other end of the capacitor C22 is connected to the other end of the capacitor C23, the first transformer and rectifier module, and the second transformer and rectifier module.

[0022] As a further solution of the present invention: the first transformer and rectifier module includes a transformer T1, a diode D8, a diode D9, a diode D10, a diode D11, and a resistor R4. The input end of the transformer T1 is connected to the power supply module, one end of the output end of the transformer T1 is connected to the positive electrode of the diode D8 and the negative electrode of the diode D10, the other end of the output end of the transformer T1 is connected to the positive electrode of the diode D9 and the negative electrode of the diode D11, the positive electrode of the diode D10 is grounded, the positive electrode of the diode D11 is grounded, the negative electrode of the diode D8 is connected to the negative electrode of the diode D9 and the resistor R4, and the other end of the resistor R4 is connected to the second integrated control module.

[0023] As a further solution of the present invention: the second transformer and rectifier module includes a transformer T2, a diode D12, a diode D13, a diode D14, a diode D15, a capacitor C25, and a capacitor C26. The input end of the transformer T2 is connected to the power supply module, one end of the output end of the transformer T2 is connected to the cathode of the diode D12 and the anode of the diode D13, the other end of the water level output end of the transformer T2 is connected to the anode of the diode D15 and the cathode of the diode D14, the anode of the diode D12 is connected to the anode of the diode D14, the capacitor C25, and the capacitor C26, the cathode of the diode D15 is connected to the cathode of the diode D13, the other end of the capacitor C25, the other end of the capacitor C26, and the resistor R24.

[0024] As a further solution of the present invention: the first integrated control module includes an integrated circuit U1, pin No. 1 of the integrated circuit U1 is connected to the G pole of the MOS tube Q2 through a resistor R10, the D pole of the MOS tube Q2 is connected to the power supply module and the resistor R14, the other end of the resistor R14 is connected to the capacitor C21, and the other end of the capacitor C21 is connected to the S pole of the MOS tube Q2, pin No. 7 of the integrated circuit U1 is connected to the G pole of the MOS tube Q1 through a resistor R9, the D pole of the MOS tube Q1 is connected to the power supply module, the S pole of the MOS tube Q1 is connected to the D pole of the MOS tube Q2, pin No. 2 of the integrated circuit U1 is connected to the S pole of the MOS tube Q2, and pin No. 3 of the integrated circuit U1 is connected to the S pole of the MOS tube Q2 through a capacitor C19.

[0025] As a further solution of the present invention: the second integrated control module includes an integrated circuit U2, pin 17 of the integrated circuit U2 is connected to pin 12 of the integrated circuit U1, pin 13 of the integrated circuit U2 is connected to pin 10 of the integrated circuit U1, pin 6 of the integrated circuit U2 is connected to resistor R2 and the second end of the optocoupler PC1, the other end of the resistor R2 is connected to a 15V voltage, the first end of the optocoupler PC1 is grounded, the third end of the optocoupler PC1 is connected to a 15V voltage, and the fourth end of the optocoupler PC1 is connected to the first end of the microcomputer.

[0026] As a further solution of the present invention: the signal output module includes a MOS tube Q3 and an optical coupler PC2, the first end of the optical coupler PC2 is connected to the fourth end of the microcomputer through a resistor R20, the second end of the optical coupler PC2 is grounded, the third end of the optical coupler PC2 is connected to a resistor R57 and the G pole of the MOS tube Q3, the other end of the resistor R57 is connected to a 15V voltage, the fourth end of the optical coupler PC2 is connected to the S pole of the MOS tube Q3, the resistor R29, the other end of the resistor R29 is connected to the inductor L2, the other end of the inductor L2 is connected to the baffle control data line, the second end of the microcomputer is connected to the cathode of the diode D15 through a resistor R56, and the third end of the microcomputer is connected to the D pole of the MOS tube Q3 and the anode of the diode D12 through resistors R60 and R59 in sequence.

[0027] Compared with the prior art, the beneficial effects of the present invention are as follows: compared with the original baffle mechanism, the switching speed of the present invention is improved from the original 10ms~30ms to less than 1ms. The original baffle is a mechanical structure, which will produce certain mechanical wear and a relatively high failure rate; the electronic baffle will not produce mechanical wear; the 0-500V voltage generated by the first integrated module is connected to the multi-way baffle mechanism through TP1 as the baffle control power supply, and when the network analyzer detects the appropriate signal generated by the quartz crystal oscillator and the Π loop, it is fed back to control the voltage of the baffle control power supply on the etching channel through the baffle control data line. The channel is blocked or opened by this electric field to allow Ar ions to pass through, thereby realizing the etching electronic baffle function. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 This is the schematic diagram of the original baffle mechanism.

[0029] Figure 2 The schematic diagram is a baffle device for an ion etching fine-tuning machine.

[0030] Figure 3 Circuit diagram for the baffle control power supply. DETAILED DESCRIPTION

[0031] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0032] See also Figure 2 and Figure 3 , a baffle device for an ion etching fine-tuning machine, comprising:

[0033] The baffle controls the power supply, which is used to control the high-frequency voltage output;

[0034] A baffle control data line, used to output the baffle control power supply output voltage to the baffle mounting control circuit board;

[0035] The baffle is installed with a control circuit board, which is used to generate an electric field for each baffle when powered, so as to stop the 23Ar ion flow at the baffle and discharge it from the vacuum chamber as the vacuum is drawn away;

[0036] A multi-way baffle mechanism is used to separate the baffle from the outside world;

[0037] Baffle, used to park 23Ar ions;

[0038] The baffle control power supply is connected to the baffle control data line, the baffle control data line is connected to the baffle installation control circuit board, and the baffle is arranged in the inner cavity of the multi-way baffle mechanism;

[0039] The baffle control power supply includes:

[0040] Power supply module, used for supplying 220V AC power;

[0041] The first transformer and rectifier module is used to convert 220V AC power into DC power to supply power to the second integrated control module;

[0042] The second transformer and rectifier module is used to convert 220V AC power into DC power to supply power to the signal output module;

[0043] The first integrated control module is used to output a PWM signal to the second integrated control module after obtaining the central control signal;

[0044] The second integrated control module is used to output a stable sine wave after receiving the PWM signal, and obtain a stable control voltage after rectification; control the on and off of the etching channel, and the channel is blocked by the electric field to block the passage of ions, and the etching stops;

[0045] The signal output module is used to receive the microcomputer control and selectively output the voltage signal to the baffle control data line;

[0046] The power supply module is connected to the first transformer and rectifier module, the second transformer and rectifier module, and the first integrated electrical control module. The first transformer and rectifier module is connected to the second integrated control module. The first integrated control module is connected to the second integrated control module. The second integrated circuit control module is connected to the microcomputer. The second transformer and rectifier module is connected to the signal output module. The microcomputer is connected to the signal output module.

[0047] In the specific embodiment: see Figure 2 and Figure 3The 0-500V voltage generated by the first integrated module is connected to the multi-way baffle mechanism through TP1 as the baffle control power supply. When the network analyzer detects the appropriate signal generated by the quartz crystal oscillator and the Π loop, it is fed back to control the voltage of the baffle control power supply on the etching channel through the baffle control data line. The channel is blocked or opened by this electric field to pass Ar ions, thereby realizing the etching electronic baffle function.

[0048] In this example: See Figure 3 The power supply module includes an interface CN1, a fuse F1, an inductor L1, a capacitor C1, a capacitor C4, a capacitor C22, and a capacitor C23. The input end of the interface CN1 is connected to 220V AC power. The third end of the interface CN1 is connected to the fuse F1. The first end of the interface CN1 is connected to the capacitor C1, the capacitor C4, and the capacitor C23. The other end of the fuse F1 is connected to the inductor L1. The other end of the inductor L1 is connected to the other end of the capacitor C1, the other end of the capacitor C4, the capacitor C22, and the first integrated control module. The other end of the capacitor C22 is connected to the other end of the capacitor C23, the first transformer and rectifier module, and the second transformer and rectifier module.

[0049] Interface CN1 is a common three-hole socket, the first and third ends correspond to the live wire and the neutral wire, and the second end corresponds to the ground wire; fuse F1 prevents the circuit from having excessive current.

[0050] In this example: See Figure 3 The first transformer and rectifier module includes a transformer T1, a diode D8, a diode D9, a diode D10, a diode D11, and a resistor R4. The input end of the transformer T1 is connected to the power supply module, one end of the output end of the transformer T1 is connected to the positive electrode of the diode D8 and the negative electrode of the diode D10, the other end of the output end of the transformer T1 is connected to the positive electrode of the diode D9 and the negative electrode of the diode D11, the positive electrode of the diode D10 is grounded, the positive electrode of the diode D11 is grounded, the negative electrode of the diode D8 is connected to the negative electrode of the diode D9 and the resistor R4, and the other end of the resistor R4 is connected to the second integrated control module.

[0051] Transformer T1 converts 220V AC power into low-voltage AC power, and diode D8, diode D9, diode D10, and diode D11 form a bridge rectifier circuit to convert the low-voltage AC power into DC power.

[0052] In this example: See Figure 3The second transformer and rectifier module includes a transformer T2, a diode D12, a diode D13, a diode D14, a diode D15, a capacitor C25, and a capacitor C26. The input end of the transformer T2 is connected to the power supply module, one end of the output end of the transformer T2 is connected to the cathode of the diode D12 and the anode of the diode D13, the other end of the water level output end of the transformer T2 is connected to the anode of the diode D15 and the cathode of the diode D14, the anode of the diode D12 is connected to the anode of the diode D14, the capacitor C25, and the capacitor C26, the cathode of the diode D15 is connected to the cathode of the diode D13, the other end of the capacitor C25, the other end of the capacitor C26, and the resistor R24.

[0053] Transformer T2 converts 220V AC power into low-voltage AC power. Diode D12, diode D13, diode D14 and diode D15 form a bridge rectifier circuit to convert low-voltage AC power into DC power. Capacitors C25 and C26 filter the DC power, and the filtered voltage is supplied to the signal output module.

[0054] In this example: See Figure 3 The first integrated control module includes an integrated circuit U1, wherein the pin No. 1 of the integrated circuit U1 is connected to the G pole of the MOS tube Q2 through a resistor R10, the D pole of the MOS tube Q2 is connected to the power supply module and the resistor R14, the other end of the resistor R14 is connected to the capacitor C21, and the other end of the capacitor C21 is connected to the S pole of the MOS tube Q2, the pin No. 7 of the integrated circuit U1 is connected to the G pole of the MOS tube Q1 through a resistor R9, the D pole of the MOS tube Q1 is connected to the power supply module, the S pole of the MOS tube Q1 is connected to the D pole of the MOS tube Q2, the pin No. 2 of the integrated circuit U1 is connected to the S pole of the MOS tube Q2, and the pin No. 3 of the integrated circuit U1 is connected to the S pole of the MOS tube Q2 through a capacitor C19. The integrated circuit U1 is a switching power supply pulse width modulation controller. It adopts fixed frequency, pulse width modulation (PWM) technology. The chip circuit includes a voltage regulator, an error amplifier, a programmable oscillator, a pulse guidance trigger, two final output transistors, a high-gain comparator, and a current limiting and shutdown protection circuit.

[0055] In this example: See Figure 3The second integrated control module includes an integrated circuit U2, wherein the pin 17 of the integrated circuit U2 is connected to the pin 12 of the integrated circuit U1, the pin 13 of the integrated circuit U2 is connected to the pin 10 of the integrated circuit U1, the pin 6 of the integrated circuit U2 is connected to the resistor R2 and the second end of the optocoupler PC1, the other end of the resistor R2 is connected to a 15V voltage, the first end of the optocoupler PC1 is grounded, the third end of the optocoupler PC1 is connected to a 15V voltage, and the fourth end of the optocoupler PC1 is connected to the first end of the microcomputer. The integrated circuit U2 is a gate drive integrated circuit dedicated to high-power MOSFET and IGBT, which can drive two paths of the same bridge arm, has independent low-end and high-end input channels, high bias voltage (< 600 V), strong driving ability, built-in undervoltage blockade, and an external protection blockade port. In particular, the upper tube drive adopts an external bootstrap capacitor to power on, which greatly reduces the number of drive power supply paths compared to other IC drivers.

[0056] In this example: See Figure 3 The signal output module includes a MOS tube Q3 and an optical coupler PC2. The first end of the optical coupler PC2 is connected to the fourth end of the microcomputer through a resistor R20. The second end of the optical coupler PC2 is grounded. The third end of the optical coupler PC2 is connected to a resistor R57 and the G pole of the MOS tube Q3. The other end of the resistor R57 is connected to a 15V voltage. The fourth end of the optical coupler PC2 is connected to the S pole of the MOS tube Q3 and a resistor R29. The other end of the resistor R29 is connected to an inductor L2. The other end of the inductor L2 is connected to a baffle control data line. The second end of the microcomputer is connected to the cathode of the diode D15 through a resistor R56. The third end of the microcomputer is connected to the D pole of the MOS tube Q3 and the anode of the diode D12 through resistors R60 and R59 in sequence.

[0057] The fourth terminal of the microcomputer sends out a high-frequency signal, causing the internal light-emitting diode of the optocoupler PC2 to emit light at a high frequency, and then the internal photosensitive transistor of the optocoupler PC2 is turned on at a high frequency, further changing the conduction state of the MOS tube Q3, and using this high-frequency output signal to control the baffle control data line, and then the high-frequency control baffle installation control circuit board controls the baffle switch and extracts the 23Ar ions, thereby increasing the baffle switch speed from the original 10ms~30ms to less than 1ms.

[0058] The signals sent from the second and third terminals of the microcomputer can also be connected to the baffle control data line through the resistor R24, so as to increase the signal frequency output to the baffle control data line.

[0059] The working principle of the present invention is: the baffle control power supply controls the high-frequency voltage output, the baffle control data line outputs the baffle control power supply output voltage to the baffle installation control circuit board, and the baffle installation control circuit board generates an electric field for each baffle when it is powered on, stops the 23Ar ion flow at the baffle, and discharges it from the vacuum chamber as the vacuum is drawn away, and the multi-way baffle mechanism separates the baffle from the outside world, and the baffle stops the 23Ar ions.

[0060] It will be apparent to those skilled in the art that the invention is not limited to the details of the exemplary embodiments described above and that the invention can be implemented in other specific forms without departing from the spirit or essential features of the invention. Therefore, the embodiments should be considered exemplary and non-limiting in all respects, and the scope of the invention is defined by the appended claims rather than the foregoing description, and it is intended that all variations falling within the meaning and scope of the equivalent elements of the claims be included in the invention. Any reference numeral in a claim should not be considered as limiting the claim to which it relates.

[0061] In addition, it should be understood that although the present specification is described according to implementation modes, not every implementation mode contains only one independent technical solution. This description of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment may also be appropriately combined to form other implementation modes that can be understood by those skilled in the art.

Claims

1. A baffle device for an ion etching fine-tuning machine, characterized in that: The baffle device for the ion etching fine-tuning machine comprises: The baffle controls the power supply, which is used to control the high-frequency voltage output; A baffle control data line, used to output the baffle control power supply output voltage to the baffle mounting control circuit board; The baffle is installed with a control circuit board, which is used to generate an electric field for each baffle when powered, so as to stop the Ar ion flow at the baffle and discharge it from the vacuum chamber as the vacuum is drawn away; A multi-way baffle mechanism is used to separate the baffle from the outside world; A baffle for parking Ar ions; The baffle control power supply is connected to the baffle control data line, the baffle control data line is connected to the baffle installation control circuit board, and the baffle is arranged in the inner cavity of the multi-way baffle mechanism; The baffle control power supply includes: Power supply module, used for supplying 220V AC power; The first transformer and rectifier module is used to convert 220V AC power into DC power to supply power to the second integrated control module; The second transformer and rectifier module is used to convert 220V AC power into DC power to supply power to the signal output module; The first integrated control module is used to output a PWM signal to the second integrated control module after obtaining the central control signal; The second integrated control module is used to output a stable sine wave after receiving the PWM signal, and obtain a stable control voltage after rectification; control the on and off of the etching channel, and the channel is blocked by the electric field to block the passage of ions, and the etching stops; The signal output module is used to receive the microcomputer control and selectively output the voltage signal to the baffle control data line; The power supply module is connected to the first transformer and rectifier module, the second transformer and rectifier module, and the first integrated electrical control module. The first transformer and rectifier module is connected to the second integrated control module. The first integrated control module is connected to the second integrated control module. The second integrated circuit control module is connected to the microcomputer. The second transformer and rectifier module is connected to the signal output module. The microcomputer is connected to the signal output module.

2. The baffle device for an ion etching fine-tuning machine according to claim 1, characterized in that: The power supply module includes an interface CN1, a fuse F1, an inductor L1, a capacitor C1, a capacitor C4, a capacitor C22, and a capacitor C23. The input end of the interface CN1 is connected to 220V AC power, the third end of the interface CN1 is connected to the fuse F1, the first end of the interface CN1 is connected to the capacitor C1, the capacitor C4, and the capacitor C23, the other end of the fuse F1 is connected to the inductor L1, the other end of the inductor L1 is connected to the other end of the capacitor C1, the other end of the capacitor C4, the capacitor C22, and the first integrated control module, the other end of the capacitor C22 is connected to the other end of the capacitor C23, the first transformer and rectifier module, and the second transformer and rectifier module.

3. The baffle device for an ion etching fine-tuning machine according to claim 1, characterized in that: The first transformer and rectifier module includes a transformer T1, a diode D8, a diode D9, a diode D10, a diode D11, and a resistor R4. The input end of the transformer T1 is connected to the power supply module, one end of the output end of the transformer T1 is connected to the positive electrode of the diode D8 and the negative electrode of the diode D10, the other end of the output end of the transformer T1 is connected to the positive electrode of the diode D9 and the negative electrode of the diode D11, the positive electrode of the diode D10 is grounded, the positive electrode of the diode D11 is grounded, the negative electrode of the diode D8 is connected to the negative electrode of the diode D9 and the resistor R4, and the other end of the resistor R4 is connected to the second integrated control module.

4. The baffle device for an ion etching fine-tuning machine according to claim 1, characterized in that: The second transformer and rectifier module includes a transformer T2, a diode D12, a diode D13, a diode D14, a diode D15, a capacitor C25, and a capacitor C26. The input end of the transformer T2 is connected to the power supply module, one end of the output end of the transformer T2 is connected to the cathode of the diode D12 and the anode of the diode D13, the other end of the water level output end of the transformer T2 is connected to the anode of the diode D15 and the cathode of the diode D14, the anode of the diode D12 is connected to the anode of the diode D14, the capacitor C25, and the capacitor C26, and the cathode of the diode D15 is connected to the cathode of the diode D13, the other end of the capacitor C25, the other end of the capacitor C26, and the resistor R24.

5. The baffle device for an ion etching fine-tuning machine according to claim 1, characterized in that: The first integrated control module includes an integrated circuit U1, wherein pin No. 1 of the integrated circuit U1 is connected to the G pole of the MOS tube Q2 through a resistor R10, the D pole of the MOS tube Q2 is connected to the power supply module and the resistor R14, the other end of the resistor R14 is connected to the capacitor C21, and the other end of the capacitor C21 is connected to the S pole of the MOS tube Q2, pin No. 7 of the integrated circuit U1 is connected to the G pole of the MOS tube Q1 through a resistor R9, the D pole of the MOS tube Q1 is connected to the power supply module, the S pole of the MOS tube Q1 is connected to the D pole of the MOS tube Q2, pin No. 2 of the integrated circuit U1 is connected to the S pole of the MOS tube Q2, and pin No. 3 of the integrated circuit U1 is connected to the S pole of the MOS tube Q2 through a capacitor C19.

6. The baffle device for an ion etching fine-tuning machine according to claim 1, characterized in that: The second integrated control module includes an integrated circuit U2, pin 17 of the integrated circuit U2 is connected to pin 12 of the integrated circuit U1, pin 13 of the integrated circuit U2 is connected to pin 10 of the integrated circuit U1, pin 6 of the integrated circuit U2 is connected to resistor R2 and the second end of the optocoupler PC1, the other end of the resistor R2 is connected to a 15V voltage, the first end of the optocoupler PC1 is grounded, the third end of the optocoupler PC1 is connected to a 15V voltage, and the fourth end of the optocoupler PC1 is connected to the first end of the microcomputer.

7. The baffle device for an ion etching fine-tuning machine according to claim 4, characterized in that: The signal output module includes a MOS tube Q3 and an optocoupler PC2. The first end of the optocoupler PC2 is connected to the fourth end of the microcomputer through a resistor R20, the second end of the optocoupler PC2 is grounded, the third end of the optocoupler PC2 is connected to a resistor R57 and the G pole of the MOS tube Q3, the other end of the resistor R57 is connected to a 15V voltage, the fourth end of the optocoupler PC2 is connected to the S pole of the MOS tube Q3 and a resistor R29, the other end of the resistor R29 is connected to an inductor L2, the other end of the inductor L2 is connected to a baffle control data line, the second end of the microcomputer is connected to the cathode of the diode D15 through a resistor R56, and the third end of the microcomputer is connected to the D pole of the MOS tube Q3 and the anode of the diode D12 through resistors R60 and R59 in sequence.

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