Method, apparatus and circuit for determining parameters of gate drive resistor of switching transistor

Abstract

The present invention discloses a method, device and circuit for determining parameters of a gate driving resistor of a switching tube. The method includes: inputting the obtained total turn-on time and turn-on driving voltage into a first turn-on gate resistor model to obtain the upper limit of the turn-on resistance value of the gate driving resistor; inputting the obtained maximum bus voltage and phase voltage change rate into a second turn-on gate resistor model to obtain the lower limit of the turn-on resistance value of the gate driving resistor; inputting the maximum bus voltage and phase voltage change rate into a turn-off gate resistor model to obtain the lower limit of the turn-off resistance value of the gate driving resistor; determining the turn-on resistance value range of the gate driving resistor through the upper limit of the turn-on resistance value and the lower limit of the turn-on resistance value, and determining the turn-off resistance value range of the gate driving resistor through the upper limit of the turn-on resistance value and the lower limit of the turn-off resistance value; and then accurately determining the resistance value of the gate driving resistor through the turn-on resistance value range and the turn-off resistance value range, which can reduce switching losses and improve the safety and stability of the motor.

Description

Technical Field

[0001] The present invention relates to the technical field of inverters, and in particular to a method, device and circuit for determining parameters of a gate drive resistor of a switching tube. Background Art

[0002] With the gradual improvement of people's living standards, more and more vehicles have entered thousands of households, providing convenience for people's travel. In the related art, in a vehicle compressor inverter system with a high input voltage, silicon carbide MOS tubes are used to reduce losses and improve the efficiency of the inverter. However, there is a problem that the parameters of the gate drive resistor of the silicon carbide MOS tube cannot be determined. Summary of the Invention

[0003] The present invention aims to solve at least one of the technical problems in the related art to some extent. To this end, the first object of the present invention is to propose a method for determining parameters of a gate drive resistor of a switching tube. By determining the gate resistance model and obtaining the total turn-on time, maximum bus voltage, phase voltage change rate of the switching tube, and the turn-on drive voltage of the switching tube, the resistance value of the gate drive resistor can be determined more accurately. Thus, when using the resistor with this resistance value as the gate drive resistor of the switching tube in the switching tube drive control circuit, the switching loss can be reduced, and the safety and stability of the motor can be improved.

[0004] The second object of the present invention is to propose a device for determining parameters of a gate drive resistor of a switching tube.

[0005] The third object of the present invention is to propose a computer-readable storage medium.

[0006] The fourth object of the present invention is to propose a switching tube drive control circuit.

[0007] The fifth object of the present invention is to propose a motor control system.

[0008] The sixth object of the present invention is to propose a compressor.

[0009] The seventh object of the present invention is to propose a vehicle.

[0010] To achieve the above object, an embodiment of the first aspect of the present invention provides a method for determining parameters of a gate drive resistor of a switching transistor, the method comprising: determining a first turn-on gate resistor model and a second turn-on gate resistor model, and determining a turn-off gate resistor model; obtaining the total turn-on time of the switching transistor, obtaining the maximum bus voltage and the phase voltage change rate, and obtaining the turn-on drive voltage of the switching transistor; inputting the total turn-on time and the turn-on drive voltage into the first turn-on gate resistor model to obtain the upper limit of the turn-on resistance value of the gate drive resistor, inputting the maximum bus voltage and the phase voltage change rate into the second turn-on gate resistor model to obtain the lower limit of the turn-on resistance value of the gate drive resistor, and inputting the maximum bus voltage and the phase voltage change rate into the turn-off gate resistor model to obtain the lower limit of the turn-off resistance value of the gate drive resistor; determining the turn-on resistance value range of the gate drive resistor according to the upper limit and the lower limit of the turn-on resistance value, determining the turn-off resistance value range of the gate drive resistor according to the upper limit of the turn-on resistance value and the lower limit of the turn-off resistance value, and determining the resistance value of the gate drive resistor according to the turn-on resistance value range and the turn-off resistance value range.

[0011] According to the method for determining parameters of a gate drive resistor of a switching transistor according to an embodiment of the present invention, by inputting the obtained total turn-on time and the turn-on drive voltage into the first turn-on gate resistor model, the upper limit of the turn-on resistance value of the gate drive resistor is obtained, inputting the obtained maximum bus voltage and the phase voltage change rate into the second turn-on gate resistor model, the lower limit of the turn-on resistance value of the gate drive resistor is obtained, inputting the maximum bus voltage and the phase voltage change rate into the turn-off gate resistor model, the lower limit of the turn-off resistance value of the gate drive resistor is obtained, and by determining the turn-on resistance value range of the gate drive resistor according to the upper limit and the lower limit of the turn-on resistance value, and determining the turn-off resistance value range of the gate drive resistor according to the upper limit of the turn-on resistance value and the lower limit of the turn-off resistance value, the resistance value of the gate drive resistor can be more accurately determined, so that when using a resistor with this resistance value as the gate drive resistor of the switching transistor in the switching transistor drive control circuit, the switching loss can be reduced, and the safety and stability of the motor can be improved.

[0012] In addition, the method for determining parameters of a gate drive resistor of a switching transistor according to the above embodiment of the present invention may further have the following additional features:

[0013] According to an embodiment of the present invention, the first turn-on gate resistor model is expressed according to the following relational expression:

[0014] ton = λ1 * f1(VDD, RG_on1)

[0015] where ton is the total turn-on time, λ1 is the first derating parameter, VDD is the turn-on drive voltage, RG_on1 is the upper limit of the turn-on resistance value, and f1(VDD, RG_on1) is the function expression corresponding to the first turn-on gate resistor model.

[0016] According to an embodiment of the present invention, the second turn-on gate resistance model is expressed according to the following relationship:

[0017] ΔV = λ2 * f2(VDC, RG_on2)

[0018] Wherein, ΔV is the phase voltage change rate, λ2 is the second derating parameter, VDC is the maximum bus voltage, RG_on2 is the lower limit of the turn-on resistance value, and f2(VDC, RG_on2) is the function expression corresponding to the second turn-on gate resistance model.

[0019] According to an embodiment of the present invention, the turn-off gate resistance model is expressed according to the following relationship:

[0020] ΔV = λ3 * f3(VDC, RG_off2)

[0021] Wherein, ΔV is the phase voltage change rate, λ3 is the third derating parameter, VDC is the maximum bus voltage, and RG_off2 is the lower limit of the turn-off resistance value.

[0022] According to an embodiment of the present invention, the switching device is a silicon carbide MOS transistor.

[0023] To achieve the above object, an embodiment of the second aspect of the present invention provides a parameter determination device for the gate drive resistance of a switching device, including: a first determination module for determining a first turn-on gate resistance model and a second turn-on gate resistance model, and determining a turn-off gate resistance model; an acquisition module for acquiring the total turn-on time of the switching device, acquiring the maximum bus voltage and the phase voltage change rate, and acquiring the turn-on drive voltage of the switching device; a second determination module for inputting the total turn-on time and the turn-on drive voltage into the first turn-on gate resistance model to obtain the upper limit of the turn-on resistance value of the gate drive resistance, inputting the maximum bus voltage and the phase voltage change rate into the second turn-on gate resistance model to obtain the lower limit of the turn-on resistance value of the gate drive resistance, and inputting the maximum bus voltage and the phase voltage change rate into the turn-off gate resistance model to obtain the lower limit of the turn-off resistance value of the gate drive resistance; the second determination module is further configured to determine the turn-on resistance value range of the gate drive resistance according to the upper limit and the lower limit of the turn-on resistance value, determine the turn-off resistance value range of the gate drive resistance according to the upper limit of the turn-on resistance value and the lower limit of the turn-off resistance value, and determine the resistance value of the gate drive resistance according to the turn-on resistance value range and the turn-off resistance value range.

[0024] The parameter determination device for the gate driving resistor of the switching tube according to the embodiment of the present invention determines the first turn-on gate resistor model, the second turn-on gate resistor model, and the turn-off gate resistor model through the first determination module. The second determination module inputs the total turn-on time and the turn-on driving voltage into the first turn-on gate resistor model to obtain the upper limit of the turn-on resistance value of the gate driving resistor, inputs the maximum bus voltage and the phase voltage change rate into the second turn-on gate resistor model to obtain the lower limit of the turn-on resistance value of the gate driving resistor, and inputs the maximum bus voltage and the phase voltage change rate into the turn-off gate resistor model to obtain the lower limit of the turn-off resistance value of the gate driving resistor. Then, the second determination module determines the turn-on resistance value range of the gate driving resistor according to the upper limit and the lower limit of the turn-on resistance value, and determines the turn-off resistance value range of the gate driving resistor according to the upper limit of the turn-on resistance value and the lower limit of the turn-off resistance value. Furthermore, the resistance value of the gate driving resistor can be determined more accurately through the turn-on resistance value range and the turn-off resistance value range. Therefore, when using the resistor with this resistance value as the gate driving resistor of the switching tube in the switching tube drive control circuit, the switching loss can be reduced, and the safety and stability of the motor can be improved.

[0025] To achieve the above object, the third aspect embodiment of the present invention proposes a computer-readable storage medium, on which a parameter determination program for the gate driving resistor of the switching tube is stored. When the parameter determination program for the gate driving resistor of the switching tube is executed by a processor, it implements the parameter determination method for the gate driving resistor of the switching tube described in any of the above embodiments.

[0026] When the parameter determination program for the gate driving resistor of the switching tube stored in the computer-readable storage medium according to the embodiment of the present invention is executed by a processor, by executing the above parameter determination method for the gate driving resistor of the switching tube, the resistance value of the gate driving resistor can be determined more accurately through the turn-on resistance value range and the turn-off resistance value range. Therefore, when using the resistor with this resistance value as the gate driving resistor of the switching tube in the switching tube drive control circuit, the switching loss can be reduced, and the safety and stability of the motor can be improved.

[0027] To achieve the above object, the fourth aspect embodiment of the present invention proposes a switching tube drive control circuit. The switching tube drive control circuit includes a drive power supply and a drive unit. Among them, the drive power supply is used to provide a positive drive voltage and a negative turn-off voltage to the drive unit; the drive unit includes a gate driving resistor. When the drive unit receives a turn-on control signal, it applies the positive drive voltage to the switching tube through the gate driving resistor to drive the switching tube to turn on, and when it receives a turn-off control signal, it applies the negative turn-off voltage to the switching tube through the gate driving resistor to drive the switching tube to turn off; the resistance value of the gate driving resistor is obtained by executing the parameter determination method for the gate driving resistor of the switching tube described in the above embodiment.

[0028] According to the switching tube drive control circuit described in the embodiments of the present invention, when a turn-on control signal is received, a positive drive voltage is applied to the switching tube through the gate drive resistor in the drive unit to drive the switching tube to turn on, and when a turn-off control signal is received, a negative turn-off voltage is applied to the switching tube through the gate drive resistor in the drive unit to drive the switching tube to turn off. Among them, the resistance value of the gate drive resistor is obtained by implementing the parameter determination method of the gate drive resistor of the switching tube described in the above embodiments. Thus, the resistance value of the gate drive resistor can be more accurately determined through the turn-on resistance range and the turn-off resistance range. Therefore, when using a resistor with this resistance value as the gate drive resistor of the switching tube in the switching tube drive control circuit, the switching loss can be reduced, and the safety and stability of the motor can be improved.

[0029] According to an embodiment of the present invention, the drive unit further includes: a drive chip, the positive power supply pin of the drive chip is connected to the positive turn-on voltage providing end of the drive power supply, the negative power supply pin of the drive chip is connected to the negative turn-off voltage providing end of the drive power supply, and the output pin of the drive chip is connected to the gate of the switching tube through the gate drive resistor; among them, when the drive chip receives a turn-on control signal, it connects the positive power supply pin and the output pin; when the drive chip receives a turn-off control signal, it connects the negative power supply pin and the output pin.

[0030] According to an embodiment of the present invention, the gate drive resistor includes: a first gate resistor, one end of the first gate resistor is connected to the output pin of the drive chip, and the other end of the first gate resistor is connected to the gate of the switching tube; a second gate resistor, one end of the second gate resistor is connected to one end of the first gate resistor through a first diode, and the other end of the second gate resistor is connected to the other end of the first gate resistor.

[0031] According to an embodiment of the present invention, the gate drive resistor includes: a first gate resistor, one end of the first gate resistor is connected to the output pin of the drive chip through a first diode, and the other end of the first gate resistor is connected to the gate of the switching tube; a second gate resistor, one end of the second gate resistor is connected to one end of the first gate resistor through a second diode, and the other end of the second gate resistor is connected to the other end of the first gate resistor, where the anode of the first diode is connected to the cathode of the second diode.

[0032] According to an embodiment of the present invention, the gate drive resistor includes: a first gate resistor, one end of the first gate resistor is connected to the output pin of the drive chip, and the other end of the first gate resistor is connected to the output pin of the drive chip through a first diode; a second gate resistor, one end of the second gate resistor is connected to the other end of the first gate resistor, and the other end of the second gate resistor is connected to the gate of the switching tube.

[0033] To achieve the above object, an embodiment of the fifth aspect of the present invention provides a motor control system, including the switch tube drive control circuit described in any of the above embodiments.

[0034] According to the motor control system described in the embodiments of the present invention, by means of the switch tube drive control circuit described in the above embodiments, the switching loss can be reduced, and the safety and stability of the motor can be improved.

[0035] To achieve the above object, an embodiment of the sixth aspect of the present invention provides a compressor, including the motor control system described in the above embodiments.

[0036] According to the compressor described in the embodiments of the present invention, by means of the motor control system described in the above embodiments, the switching loss can be reduced, and the safety and stability of the motor can be improved.

[0037] To achieve the above object, an embodiment of the seventh aspect of the present invention provides a vehicle, including the parameter determination device for the gate drive resistance of the switch tube described in the above embodiments, or the switch tube drive control circuit described in any of the above embodiments, or the motor control system described in the above embodiments, or the compressor described in the above embodiments.

[0038] According to the vehicle described in the embodiments of the present invention, by means of the parameter determination device for the gate drive resistance of the switch tube described in the above embodiments, or the switch tube drive control circuit described in any of the above embodiments, or the motor control system described in the above embodiments, or the compressor described in the above embodiments, the switching loss can be reduced, and the safety and stability of the motor can be improved.

[0039] Additional aspects and advantages of the present invention will be given in part in the following description, become apparent in part from the following description, or be learned through the practice of the present invention. Description of the Drawings

[0040] Figure 1 Schematic circuit diagram of a switch tube drive control circuit according to an embodiment of the present invention;

[0041] Figure 2 Schematic flow chart of a method for determining parameters of the gate drive resistance of a switch tube according to an embodiment of the present invention;

[0042] Figure 3 Relationship diagram of a first turn-on gate resistance model according to an embodiment of the present invention;

[0043] Figure 4 Relationship diagram of a second turn-on gate resistance model according to an embodiment of the present invention;

[0044] Figure 5 Relationship diagram of a turn-off gate resistance model according to an embodiment of the present invention;

[0045] Figure 6 It is a structural block diagram of an apparatus for determining parameters of a gate drive resistor of a switching transistor according to an embodiment of the present invention;

[0046] Figure 7 It is a schematic circuit diagram of a switching transistor drive control circuit according to another embodiment of the present invention;

[0047] Figure 8 It is a schematic circuit diagram of a switching transistor drive control circuit according to still another embodiment of the present invention;

[0048] Figure 9 It is a schematic circuit diagram of a switching transistor drive control circuit according to still another embodiment of the present invention;

[0049] Figure 10 It is a schematic circuit diagram of a switching transistor drive control circuit according to still another embodiment of the present invention;

[0050] Figure 11 It is a schematic circuit diagram of a switching transistor drive control circuit according to still another embodiment of the present invention;

[0051] Figure 12 It is a structural block diagram of a motor control system according to an embodiment of the present invention;

[0052] Figure 13 It is a structural block diagram of a compressor according to an embodiment of the present invention;

[0053] Figure 14 It is a structural block diagram of a vehicle according to an embodiment of the present invention. Detailed Description of the Invention

[0054] The embodiments of the present invention will be described in detail below. Examples of the embodiments are shown in the accompanying drawings, where the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to explain the present invention, but should not be construed as limiting the present invention.

[0055] The method for determining parameters of a gate drive resistor of a switching transistor, the apparatus for determining parameters of a gate drive resistor of a switching transistor, the switching transistor drive control circuit, the motor control system having the switching transistor drive control circuit, the compressor having the motor control system, and the vehicle having the compressor proposed in the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0056] Figure 1 It is a schematic diagram of a switching transistor drive control circuit according to an embodiment of the present invention. In an embodiment of the present invention, as Figure 1As shown in the figure, the circuit includes a driving power supply 12 and a driving unit 14. Among them, the driving power supply 12 is used to provide a positive driving voltage and a negative turn-off voltage to the driving unit 14; the driving unit 14 includes a gate driving resistor 142. When the driving unit 14 receives an on-control signal, it applies the positive driving voltage to the switching transistor Q through the gate driving resistor 142 to drive the switching transistor Q to turn on, and when it receives an off-control signal, it applies the negative turn-off voltage to the switching transistor Q through the gate driving resistor 142 to drive the switching transistor Q to turn off.

[0057] Specifically, when the driving unit 14 receives an on-control signal (for example, a high level), the driving power supply 12 provides a positive driving voltage to the gate driving resistor 142. After passing through the gate driving resistor 142, the gate voltage of the switching transistor Q is greater than or equal to the threshold voltage, and the switching transistor Q turns on; when the driving unit 14 receives an off-control signal (for example, a low level), the driving power supply 12 provides a negative driving voltage to the gate driving resistor 142. After passing through the gate driving resistor 142, the gate voltage of the switching transistor Q is less than the threshold voltage, and the switching transistor Q turns off.

[0058] It should be noted that in Figure 1 the example shown, since only the first gate resistor Ron conducts when receiving the on-control signal, and both the first gate resistor Ron and the second gate resistor Roff conduct when receiving the off-control signal, the on-resistance value of the driving resistor is the total resistance value on the on-loop (the resistance value of Ron), and the off-resistance value of the driving resistor is the total resistance value on the off-loop (the resistance value of Ron / / Roff). It should be noted that under necessary conditions, the off-resistance value of the driving resistor needs to consider the voltage drop of the diode, while in the embodiments of the present invention, the voltage drop of the diode is not considered temporarily.

[0059] Figure 2 It is a flowchart of a method for determining the parameters of the gate driving resistor of a switching transistor according to an embodiment of the present invention. Taking the application of this parameter determination method to Figure 1 the circuit shown as an example for explanation. Referring to Figure 2 as shown, the method for determining the parameters of the gate driving resistor of the switching transistor includes the following steps:

[0060] Step S1, determine the first on-gate resistor model and the second on-gate resistor model, and determine the off-gate resistor model.

[0061] Step S2, obtain the total on-time of the switching transistor, obtain the maximum bus voltage and the phase voltage change rate, and obtain the on-driving voltage of the switching transistor.

[0062] Step S3: Input the total turn-on time and turn-on drive voltage into the first turn-on gate resistance model to obtain the upper limit of the turn-on resistance value of the gate drive resistance, input the maximum bus voltage and the phase voltage change rate into the second turn-on gate resistance model to obtain the lower limit of the turn-on resistance value of the gate drive resistance, and input the maximum bus voltage and the phase voltage change rate into the turn-off gate resistance model to obtain the lower limit of the turn-off resistance value of the gate drive resistance.

[0063] Step S4: Determine the turn-on resistance value range of the gate drive resistance according to the upper limit and the lower limit of the turn-on resistance value, determine the turn-off resistance value range of the gate drive resistance according to the upper limit of the turn-on resistance value and the lower limit of the turn-off resistance value, and determine the resistance value of the gate drive resistance according to the turn-on resistance value range and the turn-off resistance value range.

[0064] According to the method for determining the parameters of the gate drive resistance of the switching tube provided by the embodiment of the present invention, by inputting the obtained total turn-on time and turn-on drive voltage into the first turn-on gate resistance model, the upper limit of the turn-on resistance value of the gate drive resistance is obtained, inputting the obtained maximum bus voltage and the phase voltage change rate into the second turn-on gate resistance model, the lower limit of the turn-on resistance value of the gate drive resistance is obtained, inputting the maximum bus voltage and the phase voltage change rate into the turn-off gate resistance model, the lower limit of the turn-off resistance value of the gate drive resistance is obtained, and by determining the turn-on resistance value range of the gate drive resistance according to the upper limit and the lower limit of the turn-on resistance value, and determining the turn-off resistance value range of the gate drive resistance according to the upper limit of the turn-on resistance value and the lower limit of the turn-off resistance value, and then accurately determining the resistance value of the gate drive resistance through the turn-on resistance value range and the turn-off resistance value range. Therefore, when using the resistor with this resistance value as the gate drive resistance of the switching tube in the switching tube drive control circuit, the switching loss can be reduced, and the safety and stability of the motor can be improved.

[0065] It can be understood that if the gate resistance is selected too large, the switching speed will be too slow, which will not only increase the switching loss, but also require restricting the dead time of the drive pulse (PWM) to prevent the bridge arm from being short-circuited; if the resistance value of the gate drive resistance is selected too small, the switching speed will be too fast, and the phase voltage change rate (dV / dt) will be too high, which will cause damage to the motor. At the same time, if the resistance value of the gate drive resistance is selected too small, the anti-EMI (Electromagnetic Interference) ability of the motor will also become poor, affecting the stability of the motor. Therefore, it is crucial to reasonably select the resistance value of the gate drive resistance.

[0066] Specifically, the first turn-on gate resistance model can be used to determine the upper limit of the turn-on resistance value of the gate drive resistance. The expression form of the first turn-on gate resistance model includes but is not limited to neural network models, data mapping diagrams / tables, mathematical relationships, etc. When the first turn-on gate resistance model is a neural network model, the inputs of the neural network model can include the total turn-on time and turn-on drive voltage of the switching device, and the output of the neural network model can include the upper limit of the turn-on resistance value of the gate drive resistance. Therefore, after obtaining the total turn-on time and turn-on drive voltage of the switching device, by inputting the total turn-on time and turn-on drive voltage of the switching device into the neural network model, the corresponding relatively accurate upper limit of the turn-on resistance value of the gate drive resistance can be quickly obtained; when the first turn-on gate resistance model is a data mapping diagram / table, the data mapping diagram / table can include the pre-determined upper limits of the turn-on resistance values of the gate drive resistance corresponding to different turn-on times and turn-on drive voltages of the switching device. Therefore, after obtaining the turn-on time and turn-on drive voltage of the switching device, by looking up the data mapping diagram / table, the corresponding relatively accurate upper limit of the turn-on resistance value of the gate drive resistance can be quickly obtained; when the first turn-on gate resistance model is a mathematical relationship, the mathematical relationship can reflect the relationship between the total turn-on time and turn-on drive voltage of the switching device and the upper limit of the turn-on resistance value of the gate drive resistance. Therefore, after obtaining the total turn-on time and turn-on drive voltage of the switching device, the corresponding upper limit of the turn-on resistance value of the gate drive resistance can be calculated according to the mathematical relationship.

[0067] The second turn-on gate resistance model can be used to determine the lower limit of the turn-on resistance value of the gate drive resistance. The expression form of the second turn-on gate resistance model includes but is not limited to neural network models, data mapping diagrams / tables, mathematical relationships, etc. When the second turn-on gate resistance model is a neural network model, the inputs of the neural network model can include the maximum bus voltage and the phase voltage change rate, and the output of the neural network model can include the lower limit of the turn-on resistance value of the gate drive resistance. Therefore, after obtaining the maximum bus voltage and the phase voltage change rate, by inputting the maximum bus voltage and the phase voltage change rate into the neural network model, the corresponding relatively accurate lower limit of the turn-on resistance value of the gate drive resistance can be quickly obtained; when the second turn-on gate resistance model is a data mapping diagram / table, the data mapping diagram / table can include the pre-determined lower limits of the turn-on resistance values of the gate drive resistance corresponding to different maximum bus voltages and phase voltage change rates. Therefore, after obtaining the maximum bus voltage and the phase voltage change rate, by looking up the data mapping diagram / table, the corresponding relatively accurate lower limit of the turn-on resistance value of the gate drive resistance can be quickly obtained; when the second turn-on gate resistance model is a mathematical relationship, the mathematical relationship can reflect the relationship between the maximum bus voltage and the phase voltage change rate and the lower limit of the turn-on resistance value of the gate drive resistance. Therefore, after obtaining the maximum bus voltage and the phase voltage change rate, the corresponding lower limit of the turn-on resistance value of the gate drive resistance can be calculated according to the mathematical relationship.

[0068] The turn-off gate resistance model can be used to determine the lower limit of the turn-off resistance value of the gate drive resistance. The expression forms of the turn-off gate resistance model include, but are not limited to, neural network models, data mapping graphs / tables, mathematical relationships, etc. When the turn-off gate resistance model is a neural network model, the inputs of the neural network model can include the maximum bus voltage and the phase voltage change rate, and the output of the neural network model can include the lower limit of the turn-off resistance value of the gate drive resistance. Thus, after obtaining the maximum bus voltage and the phase voltage change rate, inputting the maximum bus voltage and the phase voltage change rate into the neural network model can quickly obtain the corresponding and relatively accurate lower limit of the turn-off resistance value of the gate drive resistance; when the turn-off gate resistance model is a data mapping graph / table, the data mapping graph / table can include the pre-determined lower limits of the turn-off resistance values of the gate drive resistance corresponding to different maximum bus voltages and phase voltage change rates. Thus, after obtaining the maximum bus voltage and the phase voltage change rate, the corresponding and relatively accurate lower limit of the turn-off resistance value of the gate drive resistance can be quickly obtained by looking up the data mapping graph / table; when the turn-off gate resistance model is a mathematical relationship, the mathematical relationship can reflect the relationship between the maximum bus voltage and the phase voltage change rate and the lower limit of the turn-off resistance value of the gate drive resistance. Thus, after obtaining the maximum bus voltage and the phase voltage change rate, the corresponding lower limit of the turn-off resistance value of the gate drive resistance can be calculated according to the mathematical relationship.

[0069] In some embodiments, the corresponding first turn-on gate resistance model, second turn-on gate resistance model, and turn-off gate resistance model can be determined according to the type of the switching device. The expression forms of the first turn-on gate resistance models corresponding to different types of switching devices can be the same or different, the expression forms of the second turn-on gate resistance models corresponding to different types of switching devices can be the same or different, and the expression forms of the turn-off gate resistance models corresponding to different types of switching devices can be the same or different, which are not limited herein.

[0070] In step S4, the turn-on resistance value range of the gate drive resistance is greater than or equal to the turn-on resistance value lower limit and less than or equal to the turn-on resistance value upper limit, and the turn-off resistance value range of the gate drive resistance is greater than or equal to the turn-on resistance value lower limit and less than or equal to the turn-off resistance value upper limit. The resistance value of the gate drive resistance is determined according to the turn-on resistance value range, the turn-off resistance value range, and the connection condition of the gate drive resistance.

[0071] In some implementations of the present invention, the switching device is a silicon carbide MOS transistor. It can be understood that the silicon carbide MOS transistor has lower switching losses and higher working efficiency compared with ordinary MOS transistors.

[0072] In one example, multiple first coordinate points (RG_on1, VDD, ton) can be obtained based on a large number of simulation experiments, where RG_on1 represents the upper limit of the on-resistance, VDD represents the on-drive voltage, and ton represents the total turn-on time. Then, in combination with the first derating parameter, the first turn-on gate resistance model is determined through polynomial fitting.

[0073] In one example, multiple second coordinate points (RG_on2, VDC, ΔV) can be obtained according to a large number of simulation experiments, where RG_on2 represents the lower limit of the on-resistance, VDC represents the maximum bus voltage, and ΔV represents the phase voltage change rate. Then, in combination with the second derating parameter, the second turn-on gate resistance model is determined through polynomial fitting.

[0074] In one example, multiple third coordinate points (RG_off2, VDC, ΔV) are obtained based on a large number of simulation experiments, where RG_off2 represents the lower limit of the off-resistance, VDC represents the maximum bus voltage, and ΔV represents the phase voltage change rate. Then, in combination with the third derating parameter, the third turn-on gate resistance model is determined through polynomial fitting.

[0075] It should be noted that the total turn-on time of the switching device is the sum of the turn-on delay time and the rise time of the switching device.

[0076] Furthermore, in some embodiments of the present invention, the first turn-on gate resistance model is expressed according to the following relationship: ton = λ1 * f1(VDD, RG_on1) Formula (1), where ton is the total turn-on time (ns), λ1 is the first derating parameter, VDD is the on-drive voltage (V), RG_on1 is the upper limit of the on-resistance (Ω), and f1(VDD, RG_on1) is the function expression corresponding to the first turn-on gate resistance model.

[0077] Specifically, based on multiple first coordinate points and polynomial fitting, a function graph as shown in Figure 3 (taking the critical value of 667 ns as an example) can be drawn. In this graph, the total turn-on time ton of the switching device has a negative correlation with the on-drive voltage VDD. As the drive voltage VDD gradually increases, the total turn-on time ton becomes smaller; the upper limit of the on-resistance RG_on1 has a positive correlation with the on-drive voltage VDD. As the drive voltage VDD gradually increases, the upper limit of the on-resistance RG_on1 increases; the upper limit of the on-resistance RG_on1 has a negative correlation with the total turn-on time ton of the switching device. As the total turn-on time ton gradually increases, the upper limit of the on-resistance RG_on1 becomes smaller.

[0078] Thus, the specific expression of Formula (1) can be determined as: ton = b1 + b2 * VDD + b3 * RG_on1 + b4 * VDD 2+b5*VDD*RG_on1+b6*RG_on1 2 Formula (2), where the parameters are b1 = 2168.4, b2 = -247.4, b3 = 17.891, b4 = 7.222, b5 = -0.668, and b6 = -0.00373.

[0079] In some embodiments of the present invention, the second turn-on gate resistance model can be expressed according to the following relational expression: ΔV = λ2 * f2(VDC, RG_on2) Formula (3), where ΔV is the phase voltage change rate (V / ns), λ2 is the second derating parameter, VDC is the maximum bus voltage (hundred volts), RG_on2 is the lower limit of the turn-on resistance value (Ω), and f2(VDC, RG_on2) is the function expression corresponding to the second turn-on gate resistance model.

[0080] Specifically, based on multiple second coordinate points and polynomial fitting, a function graph as shown in Figure 4 is plotted (taking the critical value of 30 V / ns as an example). In this graph, the phase voltage change rate ΔV has a positive correlation with the maximum bus voltage VDC. As the phase voltage change rate ΔV gradually increases, the maximum bus voltage VDC increases; the phase voltage change rate ΔV has a negative correlation with the lower limit of the turn-on resistance value RG_on2. As the phase voltage change rate ΔV gradually increases, the lower limit of the turn-on resistance value RG_on2 decreases; the maximum bus voltage VDC and the lower limit of the turn-on resistance value RG_on2 have a positive correlation. As the maximum bus voltage VDC gradually increases, the lower limit of the turn-on resistance value RG_on2 increases.

[0081] Therefore, the specific expression of Formula (3) can be determined as: ΔV = m1 + m2 * VDC + m3 * RG_on2 + m4 * VDC 2 + m5 * VDC * RG_on2 + m6 * RG_on2 2 Formula (4), where the parameters are m1 = 16.498, m2 = 5.208, m3 = -1.428, m4 = -0.202, m5 = -0.0300, and m6 = 0.0215.

[0082] In some embodiments of the present invention, the turn-off gate resistance model can be expressed according to the following relational expression: ΔV = λ3 * f3(VDC, RG_off2) Formula (5), where ΔV is the phase voltage change rate (V / ns), λ3 is the third derating parameter, VDC is the maximum bus voltage (hundred volts), and RG_off2 is the lower limit of the turn-off resistance value (Ω).

[0083] Specifically, based on multiple third coordinate points and polynomial fitting, a graph as shown in Figure 5The shown function graph (taking the critical value of 30 V / ns as an example). In this graph, the phase voltage change rate ΔV has a positive correlation with the maximum bus voltage VDC. As the phase voltage change rate ΔV gradually increases, the maximum bus voltage VDC becomes larger; the phase voltage change rate ΔV has a negative correlation with the lower limit of the turn-off resistance RG_off2. As the phase voltage change rate ΔV gradually increases, the lower limit of the turn-off resistance RG_off2 becomes smaller; the maximum bus voltage VDC and the lower limit of the turn-off resistance RG_off2 have a positive correlation. As the maximum bus voltage VDC gradually increases, the lower limit of the turn-off resistance RG_off2 becomes larger.

[0084] Therefore, the specific expression of formula (5) can be determined as: ΔV = n1 + n2 * VDC + n3 * RG_off2 + n4 * VDC 2 + n5 * VDC * RG_off2 + n6 * RG_off 2 Formula (6), where the parameters are n1 = 8.179, n2 = 6.223, n3 = -1.649, n4 = -0.292, n5 = -0.0165, n6 = 0.0425.

[0085] In some embodiments, the total turn-on time ton of the switching device satisfies ton < tDB, where tDB is the dead time. In some embodiments, the phase voltage change rate ΔV satisfies ΔV < ΔVmax, where ΔVmax is the maximum phase voltage change rate allowed by the inverter system. For example, when the turn-on drive voltage VDD = 16 V and the dead time tDB of the switching device = 1 us, according to the above formula (2), the upper limit of the turn-on resistance RG_on1 can be determined to be 88.4 Ω, that is, the turn-on resistance of the selected gate drive resistor should not exceed 88.4 Ω; when the maximum bus voltage VDC = 900 V and the maximum allowed phase voltage change rate ΔVmax = 30 V / ns, according to the above formula (4), the lower limit of the turn-on resistance RG_on2 = 11.75 Ω can be determined, that is, the turn-on resistance of the selected gate drive resistor should not be lower than 11.75 Ω; when the maximum bus voltage VDC = 900 V and the maximum allowed phase voltage change rate ΔVmax = 30 V / ns, by inputting the values of the maximum bus voltage VDC and the phase voltage change rate ΔV (30 V / ns) into the above formula (6), the lower limit of the turn-off resistance RG_off2 = 7.05 Ω can be determined, that is, the turn-off resistance of the selected gate drive resistor should not be lower than 7.05 Ω.

[0086] From the above calculation results, it can be seen that according to the upper limit of the turn-on resistance RG_on1 = 88.4 and the lower limit of the turn-on resistance RG_on2 = 11.75, the turn-on resistance range of the gate drive resistor is [11.75, 88.4]. That is to say, Figure 1In the example shown, the resistance value range of Ron is [11.75, 88.4]; according to the turn-on resistance upper limit RG_on1 = 88.4 Ω and the turn-off resistance lower limit RG_off2 = 7.05 Ω, the turn-off and turn-on resistance value range of the gate drive resistor is [7.05, 88.4], that is, in Figure 1 In the example shown, the resistance value range of Ron / / Roff is [11.75, 88.4]; finally, according to the turn-on resistance value range and the turn-off resistance value range, the resistance values of the first gate resistor Ron and the second gate resistor Roff are determined.

[0087] It should be noted that the specific values mentioned above are only for detailed illustration of the implementation of the present invention as examples, and should not be construed as limitations on the present invention. In other examples or embodiments, other values can be selected according to the present invention, and no specific limitations are made here.

[0088] Please refer to Figure 6 , an embodiment of the present invention provides a parameter determination device 60 for the gate drive resistor of a switching tube. The parameter determination device 60 can implement the parameter determination method of any of the above embodiments. The parameter determination device 60 includes a first determination module 601, an acquisition module 602, and a second determination module 603. The first determination module 601 is used to determine a first turn-on gate resistor model and a second turn-on gate resistor model, and determine a turn-off gate resistor model. The acquisition module 602 is used to acquire the total turn-on time of the switching tube, acquire the maximum bus voltage and the phase voltage change rate, and acquire the turn-on drive voltage of the switching tube. The second determination module 603 is used to input the total turn-on time and the turn-on drive voltage into the first turn-on gate resistor model to obtain the turn-on resistance upper limit of the gate drive resistor, input the maximum bus voltage and the phase voltage change rate into the second turn-on gate resistor model to obtain the turn-on resistance lower limit of the gate drive resistor, and input the maximum bus voltage and the phase voltage change rate into the turn-off gate resistor model to obtain the turn-off resistance lower limit of the gate drive resistor. The second determination module 603 is further used to determine the turn-on resistance value range of the gate drive resistor according to the turn-on resistance upper limit and the turn-on resistance lower limit, determine the turn-off resistance value range of the gate drive resistor according to the turn-on resistance upper limit and the turn-off resistance lower limit, and determine the resistance value of the gate drive resistor according to the turn-on resistance value range and the turn-off resistance value range.

[0089] The parameter determination device 60 of the gate drive resistor of the switching tube according to the embodiment of the present invention determines the first turn-on gate resistor model, the second turn-on gate resistor model and the turn-off gate resistor model through the first determination module 601. The second determination module 603 inputs the total turn-on time and the turn-on drive voltage into the first turn-on gate resistor model to obtain the upper limit of the turn-on resistance value of the gate drive resistor, inputs the maximum bus voltage and the phase voltage change rate into the second turn-on gate resistor model to obtain the lower limit of the turn-on resistance value of the gate drive resistor, and inputs the maximum bus voltage and the phase voltage change rate into the turn-off gate resistor model to obtain the lower limit of the turn-off resistance value of the gate drive resistor. The second determination module 603 determines the turn-on resistance value range of the gate drive resistor according to the upper limit and the lower limit of the turn-on resistance value, determines the turn-off resistance value range of the gate drive resistor according to the upper limit of the turn-on resistance value and the lower limit of the turn-off resistance value, and determines the resistance value of the gate drive resistor according to the turn-on resistance value range and the turn-off resistance value range. Furthermore, the resistance value of the gate drive resistor is more accurately determined through the turn-on resistance value range and the turn-off resistance value range. Therefore, when using the resistor with this resistance value as the gate drive resistor of the switching tube in the switching tube drive control circuit, the switching loss can be reduced, and the safety and stability of the motor can be improved.

[0090] Optionally, in some embodiments of the present invention, the first turn-on gate resistor model is expressed according to the following relational expression: ton = λ1 * f1(VDD, RG_on1), where ton is the total turn-on time, λ1 is the first derating parameter, VDD is the turn-on drive voltage, RG_on1 is the upper limit of the turn-on resistance value, and f1(VDD, RG_on1) is the function expression corresponding to the first turn-on gate resistor model.

[0091] Optionally, in some embodiments of the present invention, the second turn-on gate resistor model is expressed according to the following relational expression: ΔV = λ2 * f2(VDC, RG_on2), where ΔV is the phase voltage change rate, λ2 is the second derating parameter, VDC is the maximum bus voltage, RG_on2 is the lower limit of the turn-on resistance value, and f2(VDC, RG_on2) is the function expression corresponding to the second turn-on gate resistor model.

[0092] Optionally, in some embodiments of the present invention, the turn-off gate resistor model is expressed according to the following relational expression: ΔV = λ3 * f3(VDC, RG_off2), where ΔV is the phase voltage change rate, λ3 is the third derating parameter, VDC is the maximum bus voltage, and RG_off2 is the lower limit of the turn-off resistance value.

[0093] Optionally, in some embodiments of the present invention, the switching tube is a silicon carbide MOS tube.

[0094] It should be noted that for the description of the parameter determination device 60 of the gate drive resistor of the switching transistor, please refer to the foregoing description of the parameter determination method of the gate drive resistor of the switching transistor, which will not be elaborated here.

[0095] Corresponding to the above embodiments, an embodiment of the present invention further provides a computer-readable storage medium, on which a parameter determination program for the gate drive resistor of the switching transistor is stored. When the parameter determination program for the gate drive resistor of the switching transistor is executed by a processor, the parameter determination method for the gate drive resistor of the switching transistor described in any of the above embodiments is implemented.

[0096] According to the computer-readable storage medium of the embodiment of the present invention, when the stored parameter determination program for the gate drive resistor of the switching transistor is executed by a processor, by executing the above parameter determination method for the gate drive resistor of the switching transistor, the resistance value of the gate drive resistor can be accurately determined through the on-resistance value range and the off-resistance value range. Therefore, when using the resistor with this resistance value as the gate drive resistor of the switching transistor in the switching transistor drive control circuit, the switching loss can be reduced, and the safety and stability of the motor can be improved.

[0097] Figure 7 FIG. is a schematic diagram of a switching transistor drive control circuit according to an embodiment of the present invention. As Figure 7 shown, the switching transistor drive control circuit 10 includes a drive power supply 12 and a drive unit 14. Among them, the drive power supply 12 is used to provide a positive drive voltage and a negative turn-off voltage to the drive unit 14; the drive unit 14 includes a gate drive resistor 142. When the drive unit 14 receives an on-control signal, it applies the positive drive voltage to the switching transistor Q through the gate drive resistor 142 to drive the switching transistor Q to turn on, and when it receives an off-control signal, it applies the negative turn-off voltage to the switching transistor Q through the gate drive resistor 142 to drive the switching transistor Q to turn off. Among them, the resistance value of the gate drive resistor 142 is obtained by executing the parameter determination method for the gate drive resistor of the switching transistor described in any of the above embodiments.

[0098] According to the switching transistor drive control circuit 10 described in the embodiments of the present invention, by inputting the obtained total turn-on time and turn-on drive voltage into the first turn-on gate resistance model, the upper limit of the turn-on resistance value of the gate drive resistance is obtained. By inputting the obtained maximum bus voltage and phase voltage change rate into the second turn-on gate resistance model, the lower limit of the turn-on resistance value of the gate drive resistance is obtained. By inputting the maximum bus voltage and phase voltage change rate into the turn-off gate resistance model, the lower limit of the turn-off resistance value of the gate drive resistance is obtained. And by determining the turn-on resistance value range of the gate drive resistance through the upper limit of the turn-on resistance value and the lower limit of the turn-on resistance value, and determining the turn-off resistance value range of the gate drive resistance through the upper limit of the turn-on resistance value and the lower limit of the turn-off resistance value, the resistance value of the gate drive resistance can be more accurately determined. Thus, when using a resistor with this resistance value as the gate drive resistance of the switching transistor in the switching transistor drive control circuit 10, the switching loss can be reduced, and the safety and stability of the motor can be improved.

[0099] Specifically, when the drive unit 14 receives a turn-on control signal (for example, a high level), the drive power supply 12 provides a positive drive voltage to the gate drive resistance 142. After passing through the gate drive resistance 142, the gate voltage of the switching transistor Q is greater than or equal to the threshold voltage, and the switching transistor Q turns on. When the drive unit 14 receives a turn-off control signal (for example, a low level), the drive power supply 12 provides a negative drive voltage to the gate drive resistance 142. After passing through the gate drive resistance 142, the gate voltage of the switching transistor Q is less than the threshold voltage, and the switching transistor Q turns off.

[0100] Further, in some embodiments of the invention, the drive unit 14 further includes a drive chip U1. The positive power supply pin VDD of the drive chip U1 is connected to the positive turn-on voltage providing end A of the drive power supply 12. The negative power supply pin VSS of the drive chip U1 is connected to the negative turn-off voltage providing end B of the drive power supply 12. The output pin OUT of the drive chip U1 is connected to the gate of the switching transistor Q through the gate drive resistance 142. Wherein, when the drive chip U1 receives a turn-on control signal, it connects the positive power supply pin VDD and the output pin OUT. When the drive chip U1 receives a turn-off control signal, it connects the negative power supply pin VSS and the output pin OUT.

[0101] Specifically, as Figure 8As shown, when the driving chip U1 receives a turn-on control signal (e.g., high level), the positive power supply pin VDD of the driving chip U1 receives the positive driving voltage provided by the positive turn-on voltage supply terminal A. The positive power supply pin VDD is connected to the output pin OUT, and through the gate driving resistor 142, the gate voltage of the switching transistor Q is greater than or equal to the threshold voltage, and the switching transistor Q is turned on. When the driving chip U1 receives a turn-off control signal (e.g., low level), the negative power supply pin VSS of the driving chip U1 receives the negative driving voltage provided by the negative turn-off voltage supply terminal B. The negative power supply pin VSS is connected to the output pin OUT, and through the gate driving resistor 142, the gate voltage of the switching transistor Q is less than the threshold voltage, and the switching transistor Q is turned off.

[0102] Reference Figure 9 , in some embodiments of the present invention, the gate driving resistor 142 includes a first gate resistor Ron and a second gate resistor Roff. Wherein, one end of the first gate resistor Ron is connected to the output pin OUT of the driving chip U1, and the other end of the first gate resistor Ron is connected to the gate of the switching transistor Q; one end of the second gate resistor Roff is connected to one end of the first gate resistor Ron through a first diode D1, and the other end of the second gate resistor Roff is connected to the other end of the first gate resistor Ron.

[0103] Specifically, when the driving chip U1 receives a turn-on control signal (e.g., high level), the positive power supply pin VDD of the driving chip U1 receives the positive driving voltage provided by the positive turn-on voltage supply terminal A. The positive power supply pin VDD is connected to the output pin OUT, and through the first gate resistor Ron, the gate voltage of the switching transistor Q is greater than or equal to the threshold voltage, and the switching transistor Q is turned on. When the driving chip U1 receives a turn-off control signal (e.g., low level), the negative power supply pin VSS of the driving chip U1 receives the negative driving voltage provided by the negative turn-off voltage supply terminal B. The negative power supply pin VSS is connected to the output pin OUT, and through the first gate resistor Ron, the second gate resistor Roff, and the first diode D1, the gate voltage of the switching transistor Q is less than the threshold voltage, and the switching transistor Q is turned off.

[0104] Optionally, in some embodiments of the present invention, as Figure 10 shown, the gate driving resistor 142 includes a first gate resistor Ron and a second gate resistor Roff. Wherein, one end of the first gate resistor Ron is connected to the output pin of the driving chip U1 through a first diode D1, and the other end of the first gate resistor Ron is connected to the gate of the switching transistor Q; one end of the second gate resistor Roff is connected to one end of the first gate resistor Ron through a second diode D2, and the other end of the second gate resistor Roff is connected to the other end of the first gate resistor Ron, wherein, the anode of the first diode D1 is connected to the cathode of the second diode D2.

[0105] Specifically, when the driving chip U1 receives an on-control signal (e.g., high level), the positive power supply pin VDD of the driving chip U1 receives the positive driving voltage provided by the positive on-voltage supply terminal A. The positive power supply pin VDD is connected to the output pin OUT, and through the first diode D1 and the first gate resistor Ron, the gate voltage of the switching transistor Q is greater than or equal to the threshold voltage, and the switching transistor Q is turned on. When the driving chip U1 receives an off-control signal (e.g., low level), the negative power supply pin VSS of the driving chip U1 receives the negative driving voltage provided by the negative off-voltage supply terminal B. The negative power supply pin VSS is connected to the output pin OUT, and through the second gate resistor Roff and the second diode D2, the gate voltage of the switching transistor Q is less than the threshold voltage, and the switching transistor Q is turned off.

[0106] Optionally, in some embodiments of the present invention, as Figure 11 shown, the gate driving resistor 142 includes a first gate resistor Ron and a second gate resistor Roff. One end of the first gate resistor Ron is connected to the output pin OUT of the driving chip U1, and the other end of the first gate resistor Ron is connected to the output pin OUT of the driving chip U1 through the first diode D1. One end of the second gate resistor Roff is connected to the other end of the first gate resistor Ron, and the other end of the second gate resistor Roff is connected to the gate of the switching transistor Q.

[0107] Specifically, when the driving chip U1 receives an on-control signal (e.g., high level), the positive power supply pin VDD of the driving chip U1 receives the positive driving voltage provided by the positive on-voltage supply terminal A. The positive power supply pin VDD is connected to the output pin OUT, and through the first gate resistor Ron and the second gate resistor Roff, the gate voltage of the switching transistor Q is greater than or equal to the threshold voltage, and the switching transistor Q is turned on. When the driving chip U1 receives an off-control signal (e.g., low level), the negative power supply pin VSS of the driving chip U1 receives a negative off, the negative power supply pin VSS is connected to the output pin OUT, and through the second gate resistor Roff and the first diode D1, the gate voltage of the switching transistor Q is less than the threshold voltage, and the switching transistor Q is turned off.

[0108] It should be noted that the resistance value of the gate driving resistor 142 on the on-loop (on-resistance value) when the switching transistor Q is turned on may not be equal to the resistance value of the gate driving resistor 142 on the off-loop (off-resistance value) when the switching transistor Q is turned off.

[0109] Corresponding to the above embodiments, an embodiment of the present invention further provides a motor control system. As Figure 12 shown, the motor control system 100 includes a switching transistor drive control circuit 10.

[0110] The motor control system 100 described according to the embodiments of the present invention can reduce switching losses and improve the safety and stability of the motor through the switching tube drive control circuit 10 described in the above embodiments.

[0111] It should be noted that for the description of the motor control system 100, please refer to the foregoing description of the switching tube drive control circuit 10, which will not be elaborated here.

[0112] Corresponding to the above embodiments, the embodiments of the present invention also propose a compressor. As Figure 13 shown, the compressor 200 includes the motor control system 100.

[0113] The compressor 200 described according to the embodiments of the present invention can reduce switching losses and improve the safety and stability of the motor through the motor control system 100 described in the above embodiments.

[0114] It should be noted that for the description of the compressor 200, please refer to the foregoing description of the motor control system 100, which will not be elaborated here.

[0115] The embodiments of the present invention propose a vehicle, which includes the parameter determination device 60 of the gate drive resistance of the switching tube described in the above embodiments, or the vehicle includes the switching tube drive control circuit 10 described in any of the above embodiments, or the vehicle includes the motor control system 100 described in the above embodiments, or the vehicle includes the compressor 200 described in the above embodiments. In Figure 14 the shown embodiment, the vehicle 300 includes the compressor 200 described in the above embodiments.

[0116] The vehicle can be a new energy vehicle. In some embodiments, the new energy vehicle can be a pure electric vehicle with a motor as the main driving force. In other embodiments, the new energy vehicle can also be a hybrid vehicle with an internal combustion engine and a motor as the main driving forces at the same time. Regarding the internal combustion engine and the motor that provide driving power for the new energy vehicle mentioned in the above embodiments, the internal combustion engine can use gasoline, diesel, hydrogen, etc. as fuel, and the way to provide electric energy for the motor can use power batteries, hydrogen fuel cells, etc., which are not specially limited here. It should be noted that this is only an exemplary description of the structure of the new energy vehicle and the like, and does not limit the protection scope of the present invention.

[0117] In addition, in some embodiments, the compressor applicable to the new energy vehicle according to the embodiments of the present invention may be an electric compressor including a driving part and a compression part. The driving part in the electric compressor drives the compression part to perform compression work. For example, the driving part may be a driving motor including a rotor and a stator. Additionally, in some embodiments, the electric compressor may be a low backpressure compressor. The driving part may be arranged in a low-pressure cavity communicated with the suction port of the compressor, and the compression part may be arranged in a high-pressure cavity communicated with the discharge port of the compressor. Furthermore, in some embodiments, the electric compressor may be a horizontal compressor, and the driving part and the compression part may be arranged horizontally, etc.

[0118] For the vehicle described according to the embodiments of the present invention, by means of the parameter determination device 60 of the gate drive resistor of the switching tube described in the above embodiments, or the switching tube drive control circuit 10 described in any of the above embodiments, or the motor control system 100 described in the above embodiments, or the compressor 200 described in the above embodiments, the switching loss can be reduced, and the safety and stability of the motor can be improved.

[0119] It should be noted that for the description of the vehicle, please refer to the description of the parameter determination device 60 of the gate drive resistor of the switching tube, or the switching tube drive control circuit 10, or the motor control system 100, or the compressor 200 described above, which will not be elaborated here.

[0120] It should be noted that the logic and / or steps represented in the flowchart or otherwise described herein, for example, can be considered as a definite sequence list of executable instructions for implementing logical functions, and can be specifically implemented in any computer-readable medium for use by an instruction execution system, apparatus, or device (such as a computer-based system, a system including a processor, or other systems that can fetch and execute instructions from the instruction execution system, apparatus, or device), or in combination with these instruction execution systems, apparatus, or devices. For the purposes of this specification, a "computer-readable medium" can be any device that can contain, store, communicate, propagate, or transport a program for use by or in connection with an instruction execution system, apparatus, or device. More specific examples (non-exhaustive list) of the computer-readable medium include the following: an electrical connection part (electronic device) having one or more wirings, a portable computer diskette (magnetic device), a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disc read-only memory (CDROM). Additionally, the computer-readable medium can even be paper or other suitable media on which the program can be printed, because the program can be obtained electronically, for example, by optically scanning the paper or other media, followed by editing, interpretation, or otherwise processing as appropriate, and then stored in a computer memory.

[0121] It should be understood that each part of the present invention can be implemented by hardware, software, firmware, or a combination thereof. In the above embodiments, multiple steps or methods can be implemented by software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented by hardware, as in another embodiment, any one or a combination of the following techniques well known in the art can be used: discrete logic circuits with logic gate circuits for implementing logical functions on data signals, application specific integrated circuits with appropriate combinational logic gate circuits, programmable gate arrays (PGAs), field programmable gate arrays (FPGAs), etc.

[0122] In the description of this specification, the descriptions with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples", etc. mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0123] In addition, the terms "first", "second", etc. used in the embodiments of the present invention are only for descriptive purposes and should not be construed as indicating or implying relative importance, or implicitly indicating the number of technical features indicated in this embodiment. Thus, the features defined with the terms "first", "second", etc. in the embodiments of the present invention can explicitly or implicitly indicate that at least one such feature is included in this embodiment. In the description of the present invention, the meaning of the word "plurality" is at least two or more than two, such as two, three, four, etc., unless otherwise specifically defined in the embodiments.

[0124] In the present invention, unless otherwise clearly specified or limited in the embodiments, the terms "mounted", "connected", "connected", and "fixed", etc. appearing in the embodiments should be understood in a broad sense. For example, the connection can be a fixed connection, a detachable connection, or integrated. It can be understood that it can also be a mechanical connection, an electrical connection, etc.; of course, it can also be directly connected, or indirectly connected through an intermediate medium, or it can be the communication inside two components, or the interaction relationship between two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to the specific implementation situations.

[0125] It should be noted that the technical features of the above embodiments can be combined arbitrarily. For the sake of concise description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered to be within the scope described in this specification.

[0126] Although the embodiments of the present invention have been shown and described above, it can be understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those of ordinary skill in the art can make changes, modifications, substitutions, and variations to the above embodiments within the scope of the present invention.

Claims

1. A method for determining the parameters of the gate driving resistor of a switching transistor, characterized in that, Including: Determine a first turn-on gate resistance model and a second turn-on gate resistance model, and determine a turn-off gate resistance model; Obtain the total turn-on time of the switching device, obtain the maximum bus voltage and the phase voltage change rate, and obtain the turn-on drive voltage of the switching device; Input the total turn-on time and the turn-on drive voltage into the first turn-on gate resistance model to obtain the upper limit of the turn-on resistance value of the gate drive resistance, input the maximum bus voltage and the phase voltage change rate into the second turn-on gate resistance model to obtain the lower limit of the turn-on resistance value of the gate drive resistance, and input the maximum bus voltage and the phase voltage change rate into the turn-off gate resistance model to obtain the lower limit of the turn-off resistance value of the gate drive resistance; Determine the turn-on resistance value range of the gate drive resistance according to the upper limit and the lower limit of the turn-on resistance value, determine the turn-off resistance value range of the gate drive resistance according to the upper limit of the turn-on resistance value and the lower limit of the turn-off resistance value, and determine the resistance value of the gate drive resistance according to the turn-on resistance value range and the turn-off resistance value range.

2. The method according to claim 1, wherein The first turn-on gate resistance model is expressed according to the following relational expression: ton = λ1 * f1(VDD, RG_on1) Where, ton is the total turn-on time, λ1 is the first derating parameter, VDD is the turn-on drive voltage, RG_on1 is the upper limit of the turn-on resistance value, and f1(VDD, RG_on1) is the function expression corresponding to the first turn-on gate resistance model.

3. The method according to claim 1, wherein The second turn-on gate resistance model is expressed according to the following relational expression: ΔV = λ2 * f2(VDC, RG_on2) Where, ΔV is the phase voltage change rate, λ2 is the second derating parameter, VDC is the maximum bus voltage, RG_on2 is the lower limit of the turn-on resistance value, and f2(VDC, RG_on2) is the function expression corresponding to the second turn-on gate resistance model.

4. The method according to claim 1, wherein The turn-off gate resistance model is expressed according to the following relational expression: ΔV = λ3 * f3(VDC, RG_off2) Where, ΔV is the phase voltage change rate, λ3 is the third derating parameter, VDC is the maximum bus voltage, and RG_off2 is the lower limit of the turn-off resistance value.

5. The method according to any one of claims 1-4, characterized in that, The switching device is a silicon carbide MOS transistor.

6. A parameter determination device for the gate drive resistance of a switching transistor, characterized in that, Including: A first determination module, configured to determine a first turn-on gate resistance model and a second turn-on gate resistance model, and determine a turn-off gate resistance model; An acquisition module, configured to obtain the total turn-on time of the switching device, obtain the maximum bus voltage and the phase voltage change rate, and obtain the turn-on drive voltage of the switching device; A second determination module, configured to input the total turn-on time and the turn-on drive voltage into the first turn-on gate resistance model to obtain the upper limit of the turn-on resistance value of the gate drive resistance, input the maximum bus voltage and the phase voltage change rate into the second turn-on gate resistance model to obtain the lower limit of the turn-on resistance value of the gate drive resistance, and input the maximum bus voltage and the phase voltage change rate into the turn-off gate resistance model to obtain the lower limit of the turn-off resistance value of the gate drive resistance; The second determination module is further configured to determine the turn-on resistance range of the gate drive resistor according to the turn-on resistance upper limit and the turn-on resistance lower limit, determine the turn-off resistance range of the gate drive resistor according to the turn-on resistance upper limit and the turn-off resistance lower limit, and determine the resistance value of the gate drive resistor according to the turn-on resistance range and the turn-off resistance range.

7. A computer-readable storage medium, characterized in that, A parameter determination program for the gate drive resistor of the switching tube is stored thereon. When the parameter determination program for the gate drive resistor of the switching tube is executed by a processor, it implements the parameter determination method for the gate drive resistor of the switching tube according to any one of claims 1-5.

8. A switching tube drive control circuit, characterized in that, It includes a drive power supply and a drive unit, wherein, The drive power supply is used to provide a positive drive voltage and a negative turn-off voltage to the drive unit; The drive unit includes a gate drive resistor. When the drive unit receives a turn-on control signal, it applies the positive drive voltage to the switching tube through the gate drive resistor to drive the switching tube to turn on. When the drive unit receives a turn-off control signal, it applies the negative turn-off voltage to the switching tube through the gate drive resistor to drive the switching tube to turn off; The resistance value of the gate drive resistor is obtained by executing the parameter determination method for the gate drive resistor of the switching tube according to any one of claims 1-5.

9. The switching tube driving and controlling circuit according to claim 8, wherein The drive unit further includes: A drive chip. The positive power supply pin of the drive chip is connected to the positive turn-on voltage providing end of the drive power supply. The negative power supply pin of the drive chip is connected to the negative turn-off voltage providing end of the drive power supply. The output pin of the drive chip is connected to the gate of the switching tube through the gate drive resistor; Wherein, when the drive chip receives the turn-on control signal, it connects the positive power supply pin and the output pin; when the drive chip receives the turn-off control signal, it connects the negative power supply pin and the output pin.

10. The switching transistor driving control circuit according to claim 9, characterized in that, The gate drive resistor includes: A first gate resistor. One end of the first gate resistor is connected to the output pin of the drive chip, and the other end of the first gate resistor is connected to the gate of the switching tube; A second gate resistor. One end of the second gate resistor is connected to one end of the first gate resistor through a first diode, and the other end of the second gate resistor is connected to the other end of the first gate resistor.

11. The switching transistor driving and controlling circuit according to claim 9, wherein The gate drive resistor includes: A first gate resistor. One end of the first gate resistor is connected to the output pin of the drive chip through a first diode, and the other end of the first gate resistor is connected to the gate of the switching tube; A second gate resistor. One end of the second gate resistor is connected to one end of the first gate resistor through a second diode, and the other end of the second gate resistor is connected to the other end of the first gate resistor, wherein the anode of the first diode is connected to the cathode of the second diode.

12. The switching tube driving and controlling circuit according to claim 9, wherein The gate drive resistor includes: A first gate resistor. One end of the first gate resistor is connected to the output pin of the drive chip, and the other end of the first gate resistor is connected to the output pin of the drive chip through a first diode; A second gate resistor, one end of the second gate resistor is connected to the other end of the first gate resistor, and the other end of the second gate resistor is connected to the gate of the switching transistor.

13. A motor control system, characterized in that, Comprising the switching transistor drive control circuit according to any one of claims 8-12.

14. A compressor, characterized in that, Comprising the motor control system according to claim 13.

15. A vehicle, characterized in that, Comprising the parameter determination device of the gate drive resistor of the switching transistor according to claim 6, or the switching transistor drive control circuit according to any one of claims 8-12, or the motor control system according to claim 13, or the compressor according to claim 14.

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