Semiconductor light-emitting device and film lamination method thereof

Abstract

The present invention discloses a semiconductor light-emitting device and a method for laminating the same. The method comprises the following steps: S1, positioning the semiconductor light-emitting device and an elastic cofferdam on a lower jig, with the elastic cofferdam being disposed on the periphery of the semiconductor light-emitting device; S2, disposing a glue liquid on the semiconductor light-emitting device and located within the inner ring of the elastic cofferdam; S3, moving the upper jig downward until it presses against the glue liquid and the top of the elastic cofferdam, so that the glue liquid fills the space defined between the upper jig and the elastic cofferdam and evenly covers the semiconductor light-emitting device; S4, performing a heating and curing process to form a uniform glue film layer; S5, moving the upper jig upward to separate from the glue film layer; S6, removing the semiconductor light-emitting device and the elastic cofferdam with the glue film layer from the lower jig, and cutting off the elastic cofferdam. The method for laminating the semiconductor light-emitting device of the present invention obtains a glue film layer with good uniformity and uniform thickness, thereby improving product quality and facilitating simultaneous lamination of multiple parts, thereby improving efficiency.

Description

Technical Field

[0001] The present invention relates to the technical field of light-emitting devices, and in particular to a semiconductor light-emitting device and a film lamination method thereof. Background Art

[0002] With the improvement of luminous efficiency and the reduction of manufacturing costs, semiconductor light sources have been widely used in backlighting, display, and lighting. Semiconductor light sources include various types such as LEDs, COBs, modules, light panels, and light strips. Common semiconductor light sources (semiconductor light-emitting devices) generally consist of a substrate and a semiconductor light-emitting chip mounted on the substrate. The semiconductor light-emitting chip is also covered with an adhesive layer, which not only provides protection but also can diffuse light as needed.

[0003] The current method for setting the adhesive layer primarily involves placing the adhesive on a lower fixture, placing the semiconductor light-emitting device on an upper fixture, and then moving the upper fixture downward to press the semiconductor light-emitting device onto the adhesive, thereby ensuring adhesion. This setup is complex to remove and place the semiconductor light-emitting device, making alignment difficult and inefficient. The adhesive also has poor fluidity, resulting in uneven thickness of the adhesive layer adhered to the semiconductor light-emitting device. Furthermore, bubbles in the adhesive can cause voids in the subsequent adhesive layer, impacting product quality. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to provide a method for laminating a semiconductor light-emitting device and a semiconductor light-emitting device formed by the method, which can improve the lamination uniformity and efficiency.

[0005] The technical solution adopted by the present invention to solve the technical problem is: to provide a film lamination method for a semiconductor light-emitting device, comprising the following steps:

[0006] S1, positioning a semiconductor light emitting device and an elastic cofferdam on a lower fixture, and arranging the elastic cofferdam around the periphery of the semiconductor light emitting device;

[0007] S2, placing glue on the semiconductor light emitting device and located on the inner circle of the elastic cofferdam;

[0008] S3, the upper jig moves downward until it presses against the glue and the top of the elastic cofferdam, so that the glue fills the space defined between the upper jig and the elastic cofferdam and evenly covers the semiconductor light-emitting device;

[0009] S4, heating and curing the adhesive to form a uniform adhesive film layer;

[0010] S5, the upper jig moves upward and separates from the film layer;

[0011] S6. Remove the semiconductor light-emitting device with the adhesive film layer and the elastic cofferdam from the lower fixture, and cut off the elastic cofferdam.

[0012] Preferably, in step S1, on the lower jig, the height of the elastic dam is greater than the height of the semiconductor light emitting device.

[0013] Preferably, the semiconductor light emitting device comprises a substrate and a semiconductor light emitting chip arranged on a first surface of the substrate;

[0014] In step S1, the second surface of the substrate faces and is positioned on the lower jig;

[0015] In step S3, the glue covers the first surface of the substrate and the semiconductor light-emitting chip thereon;

[0016] In step S4, after heating and curing, the thickness of the adhesive film layer on the first surface of the substrate = the height of the elastic dam after being compressed - the thickness of the substrate.

[0017] Preferably, the semiconductor light emitting device further comprises electronic components arranged on the second surface of the substrate;

[0018] In step S1 , a hollow area is provided on the lower jig, and when the second surface of the substrate faces and is positioned on the lower jig, the electronic component is accommodated in the hollow area.

[0019] Preferably, step S1 further comprises: providing an auxiliary cofferdam on the periphery of the elastic cofferdam;

[0020] In step S3, when the glue overflows the elastic cofferdam, the overflowed glue is confined between the elastic cofferdam and the auxiliary cofferdam.

[0021] Preferably, the lower fixture is further provided with at least one limiting pillar; the limiting pillar is located outside the elastic cofferdam, and the height of the semiconductor light emitting device is less than the height of the limiting pillar and less than the height of the elastic cofferdam;

[0022] In step S3, the upper fixture moves downward until it abuts against the limiting pillar.

[0023] Preferably, a groove is provided on the surface of the upper jig facing the lower jig to form a glue buffer space;

[0024] In step S3, after the upper fixture moves downward to press the glue and the top of the elastic cofferdam, the excess glue is squeezed into the glue buffer space.

[0025] Preferably, after step S2, the method further includes: vacuuming to remove bubbles in the glue.

[0026] Preferably, after step S6, the adhesive film layer is heated and cured again.

[0027] Preferably, the lower jig is further provided with a positioning post extending toward the upper jig, and the upper jig is provided with a positioning hole adapted to the positioning post;

[0028] In step S3, when the upper jig moves downward, it cooperates with the positioning post through the positioning hole and moves downward along the positioning post to approach the lower jig.

[0029] Preferably, a spring is sleeved on the positioning column; in a natural state, the height of the spring is greater than the height of the elastic cofferdam.

[0030] The present invention provides another method for laminating a semiconductor light-emitting device, comprising the following steps:

[0031] S1. Positioning a semiconductor light-emitting device on a lower fixture, and disposing an elastic cofferdam on an edge of a substrate of the semiconductor light-emitting device and located around a semiconductor light-emitting chip of the semiconductor light-emitting device;

[0032] S2, placing glue on the semiconductor light emitting device and located on the inner circle of the elastic cofferdam;

[0033] S3, the upper jig moves downward until it presses against the glue and the top of the elastic cofferdam, so that the glue fills the space defined between the upper jig and the elastic cofferdam and evenly covers the semiconductor light-emitting device;

[0034] S4, heating and curing the adhesive to form a uniform adhesive film layer;

[0035] S5, the upper jig moves upward and separates from the film layer;

[0036] S6, removing the semiconductor light emitting device with the adhesive film layer and the elastic cofferdam from the lower fixture as a whole, and cutting off the elastic cofferdam and the edge of the substrate thereunder.

[0037] Preferably, in step S1, on the substrate, the height of the elastic dam is greater than the height of the semiconductor light-emitting chip.

[0038] Preferably, in step S4, after heating and curing, the thickness of the adhesive film layer on the substrate is equal to the height of the elastic cofferdam after being compressed.

[0039] Preferably, step S1 further comprises: providing an auxiliary cofferdam on the periphery of the elastic cofferdam;

[0040] In step S3, when the glue overflows the elastic cofferdam, the overflowed glue is confined between the elastic cofferdam and the auxiliary cofferdam.

[0041] Preferably, the lower fixture is further provided with at least one limiting pillar; the height of the semiconductor light emitting device is less than the height of the limiting pillar and less than the sum of the height of the elastic cofferdam and the height of the substrate;

[0042] In step S3, the upper fixture moves downward until it abuts against the limiting pillar.

[0043] Preferably, a groove is provided on the surface of the upper jig facing the lower jig to form a glue buffer space;

[0044] In step S3, after the upper fixture moves downward to press the glue and the top of the elastic cofferdam, the excess glue is squeezed into the glue buffer space.

[0045] Preferably, after step S2, the method further includes: vacuuming to remove bubbles in the glue.

[0046] Preferably, after step S6, the adhesive film layer is heated and cured again.

[0047] Preferably, the lower jig is further provided with a positioning post extending toward the upper jig, and the upper jig is provided with a positioning hole adapted to the positioning post;

[0048] In step S3, when the upper jig moves downward, it cooperates with the positioning post through the positioning hole and moves downward along the positioning post to approach the lower jig.

[0049] Preferably, a spring is sleeved on the positioning column; in a natural state, the height of the spring is greater than the sum of the height of the elastic cofferdam and the height of the base plate.

[0050] The present invention also provides a semiconductor light-emitting device, comprising a semiconductor light-emitting device body and an adhesive film layer arranged on the semiconductor light-emitting device body; the adhesive film layer is formed by any of the above-mentioned semiconductor light-emitting device lamination methods.

[0051] The semiconductor light-emitting device lamination method of the present invention places the semiconductor light-emitting device and the glue on a lower jig, and with the arrangement of an elastic cofferdam around the glue, the glue is evenly distributed on the semiconductor light-emitting device through the downward pressure of the upper jig, thereby obtaining a glue film layer with good uniformity and uniform thickness, improving product quality; and facilitating the simultaneous lamination of multiple parts, thereby improving efficiency.

[0052] In addition, the elastic cofferdam is used to confine the glue liquid to its inner circle, which is beneficial to improving the uniformity of film pressing and facilitating the vacuum treatment of the glue liquid to remove bubbles and avoid the problem of voids in the film layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0053] The present invention will be further described below with reference to the accompanying drawings and embodiments, in which:

[0054] Figure 1 1 is a schematic structural diagram of a semiconductor light-emitting device after setting a glue solution in a film lamination method according to a first embodiment of the present invention;

[0055] Figure 2 1 is a schematic structural diagram of the semiconductor light emitting device after the glue is pressed in the lamination method of the first embodiment of the present invention;

[0056] Figure 3 1 is a schematic structural diagram of a semiconductor light emitting device after setting a glue solution in a lamination method according to a second embodiment of the present invention;

[0057] Figure 4 1 is a schematic structural diagram of a semiconductor light-emitting device after the glue solution is pressed in a lamination method of the second embodiment of the present invention;

[0058] Figure 5 1 is a schematic structural diagram of a jig in a lamination method for a semiconductor light-emitting device according to a third embodiment of the present invention;

[0059] Figure 6 Schematic diagram of the structure of a jig in a lamination method for a semiconductor light-emitting device according to a fourth embodiment of the present invention. DETAILED DESCRIPTION

[0060] In order to have a clearer understanding of the technical features, purposes and effects of the present invention, specific embodiments of the present invention are now described in detail with reference to the accompanying drawings.

[0061] like Figure 1 、 2 As shown, the film lamination method of the semiconductor light emitting device according to the first embodiment of the present invention includes the following steps:

[0062] S1 , positioning the semiconductor light emitting device 10 and the elastic dam 20 on the lower jig 1 , and disposing the elastic dam 20 around the periphery of the semiconductor light emitting device 10 .

[0063] It is understood that there is no specific order in which the elastic cofferdam 20 and the semiconductor light-emitting device 10 are positioned on the lower jig 1. Specifically, the semiconductor light-emitting device 10 can be positioned on the lower jig 1 first, followed by the elastic cofferdam 20 being positioned on the lower jig 1 and surrounding the semiconductor light-emitting device 10. Alternatively, the elastic cofferdam 20 can be positioned on the lower jig 1 first, followed by the semiconductor light-emitting device 10 being placed within the inner circle of the elastic cofferdam 20 and positioned on the lower jig 1.

[0064] On the lower jig 1, the height of the elastic cofferdam 20 is greater than the height of the semiconductor light-emitting device 10, so that when the upper jig 2 moves downward and approaches the lower jig 1, it can be pressed against the top of the elastic cofferdam 20, and there is a certain distance between it and the semiconductor light-emitting device 10. This distance can also determine the thickness of the film layer to be formed on the semiconductor light-emitting device 10.

[0065] The elastic cofferdam 20 can be an annular structure or can be formed by connecting at least two cofferdam bodies. In addition, the elastic cofferdam 20 is made of elastic material, such as silica gel, rubber, etc., which has a certain deformation ability under external pressure.

[0066] The semiconductor light emitting device 10 further comprises a substrate and a semiconductor light emitting chip. The substrate has a first surface and a second surface opposite to each other, and the semiconductor light emitting chip is disposed on the first surface of the substrate. The substrate is positioned on the lower fixture 1 with its second surface facing the substrate.

[0067] When the semiconductor light-emitting device 10 also includes electronic components (such as a driver chip) for driving the semiconductor light-emitting device 10, the electronic components are disposed on the second surface of the substrate. A hollow area corresponding to the electronic components is provided on the lower jig 1. When the second surface of the substrate faces and is positioned on the lower jig 1, the electronic components are accommodated in the hollow area, thereby ensuring a stable fit of the substrate on the lower jig 1.

[0068] S2 , placing the glue 30 on the semiconductor light emitting device 10 and located on the inner circle of the elastic cofferdam 20 .

[0069] In conjunction with the structure of semiconductor light-emitting device 10, the adhesive primarily covers the first surface of the substrate and the semiconductor light-emitting chip thereon. The adhesive 30 has a certain viscosity, forming a bulge on semiconductor light-emitting device 10, so that the highest portion is higher than the height of elastic cofferdam 20.

[0070] In order to avoid the problem of voids in the adhesive film layer formed subsequently, the process further includes: vacuuming to remove bubbles in the adhesive solution 30 .

[0071] To facilitate the vacuum process, the space where the upper fixture 2 and the lower fixture 1 are located is a closed space. After placing the semiconductor light-emitting device 10, the elastic cofferdam 20 and the glue 30, the vacuum device is connected to vacuum the closed space to remove the bubbles in the glue 30.

[0072] The adhesive 30 can be made of, but is not limited to, at least one of modified epoxy resin, modified silicone, epoxy resin, and silicone. Furthermore, the adhesive 30 can be colorless and transparent, or translucent as needed, or be doped with at least one of light-diffusing powder, coloring powder, and photoluminescent powder.

[0073] Light-diffusing powders can be, but are not limited to, glass powders, ceramic powders, oxide powders, and nitride powders in micron, submicron, or nanometer particle sizes. Coloring powders can be, but are not limited to, melanin, carbon black, and oxide powders in micron, submicron, or nanometer particle sizes. Photoluminescent powders can be phosphors and / or quantum dots; phosphors include, but are not limited to, YAG phosphors, oxide phosphors, nitride phosphors, fluoride phosphors, aluminate phosphors, silicate phosphors, and oxynitride phosphors; quantum dots include, but are not limited to, silicon quantum dots, germanium quantum dots, cadmium sulfide quantum dots, cadmium selenide quantum dots, cadmium telluride quantum dots, zinc selenide quantum dots, lead sulfide quantum dots, lead selenide quantum dots, indium phosphide quantum dots, and indium arsenide quantum dots.

[0074] S3 , the upper fixture 2 moves downward until it presses against the glue 30 and the top of the elastic cofferdam 20 , so that the glue 30 fills the space defined between the upper fixture 2 and the elastic cofferdam 20 and evenly covers the semiconductor light emitting device 10 .

[0075] Driven by a drive mechanism, the upper jig 2 moves downward at a predetermined speed toward the lower jig 1 until it presses against the adhesive 30 and the top of the elastic cofferdam 20. Pressed by the upper jig 2, the adhesive 30 flows and fills the surrounding space. Once the upper jig 2 contacts the top of the elastic cofferdam 20, it closes the inner space of the elastic cofferdam 20 (i.e., the space defined between the upper jig 2 and the elastic cofferdam 20), confining the adhesive 30 within this inner space.

[0076] According to the inner volume of the elastic cofferdam 20 and the thickness of the adhesive film layer required on the semiconductor light emitting device 10, the adhesive liquid 30 should be provided in sufficient amount or slightly in excess.

[0077] The surface of the upper jig 2 facing the lower jig 1 can be provided with a groove to form a glue buffer space. When the upper jig 2 moves downward to press against the glue and the top of the elastic cofferdam 20, excess glue is squeezed into the glue buffer space of the upper jig 2. To ensure that the glue 30 covers the entire surface of the semiconductor light-emitting device 10 with a uniform coverage thickness, the upper jig 2 can continue to press downward after contacting the top of the elastic cofferdam 20, deforming the top of the elastic cofferdam 20 and compressing the glue 30 so that it fills the entire inner circle space.

[0078] An auxiliary cofferdam (not shown) can also be provided outside the elastic cofferdam 20 to surround the elastic cofferdam 20. When excess adhesive 30 overflows from the elastic cofferdam 20, the overflowed adhesive 30 can be confined between the elastic cofferdam 20 and the auxiliary cofferdam. The height of the auxiliary cofferdam is generally equal to or greater than that of the elastic cofferdam 20. The configuration and materials of the auxiliary cofferdam can refer to those of the elastic cofferdam 20.

[0079] To prevent the upper fixture 2 from moving too much or too little downward, the lower fixture 1 is further provided with at least one limiting support 40; the limiting support 40 is located outside the elastic cofferdam 20. In terms of height, the height of the semiconductor light-emitting device 10 is less than the height of the limiting support 40, which is less than the height of the elastic cofferdam 20.

[0080] When the upper jig 2 moves downward until it abuts against the limiting pillar 40 , the upper jig 2 stops moving.

[0081] S4 , performing a heating and curing process to form a uniform adhesive film layer on the adhesive solution 30 , and the adhesive film layer covers the semiconductor light emitting device 10 .

[0082] Specifically, a heating device is provided in the upper fixture 2 and / or the lower fixture 1, which has a heating function. During curing, the heating function is activated to heat and cure the adhesive 30. The cured adhesive 30 forms an adhesive film layer.

[0083] Alternatively, the lower jig 1 can be placed on a platform with a heating function, and the heating function of the platform can be activated to transfer heat to the lower jig 1, so that the lower jig 1 is heated to the temperature required to cure the adhesive. Alternatively, a pressure platform provided above the upper jig 2 can be heated to the temperature required to cure the adhesive by activating the heating function of the pressure platform and transferring heat to the upper jig 2, so that the upper jig 2 is heated to the temperature required to cure the adhesive.

[0084] After heating and curing, the thickness of the adhesive film layer on the first surface of the substrate = the height of the elastic dam 20 after being compressed - the thickness of the substrate.

[0085] S5. The upper fixture 2 moves upward and separates from the film layer.

[0086] After the curing process is complete, the upper jig 2 moves upward to separate from the film layer and the elastic cofferdam 20. To facilitate separation of the upper jig 2 from the film layer, a release film layer is pre-applied to the pressing area of the upper jig 2 before the upper jig 2 moves downward. This release film layer can be formed by laminating with a release film or coating with a release agent.

[0087] S6 , removing the semiconductor light emitting device 10 with the adhesive film layer and the elastic cofferdam 20 from the lower fixture 1 as a whole, and cutting off the elastic cofferdam 20 .

[0088] Corresponding to the outer peripheral side surface of the semiconductor light emitting device 10 , the adhesive film layer portion and the elastic dam 20 located outside the outer peripheral side surface are removed.

[0089] Furthermore, after the elastic cofferdam 20 is cut off, the adhesive film layer is heated and cured again.

[0090] Depending on the material of the glue 30 , the formed glue film layer can be a functional film layer such as a protective layer, a fluorescent layer, a light shielding layer or a light diffusion layer.

[0091] like Figure 3 、 4 As shown, the film lamination method of the semiconductor light emitting device according to the second embodiment of the present invention includes the following steps:

[0092] S1 . Position the semiconductor light emitting device 10 and the spring dam 20 on the lower fixture 1 .

[0093] The semiconductor light-emitting device 10 includes a substrate 11 and a semiconductor light-emitting chip 12 disposed on the substrate 11. In this embodiment, the semiconductor light-emitting device 10 is positioned on the lower jig 1 via the substrate 11. The elastic dam 20 is disposed on the edge of the substrate 11 and is positioned around the semiconductor light-emitting chip 12. On the semiconductor light-emitting device 10, both the elastic dam 20 and the semiconductor light-emitting chip 12 face the upper jig 2.

[0094] In addition, corresponding to the arrangement of the elastic dam 20 on the substrate 11 , the substrate 11 is larger in size than the substrate required for the semiconductor light emitting device 10 , thereby having a redundant edge portion for accommodating the elastic dam 20 .

[0095] On the substrate 11 of the semiconductor light-emitting device 10, the height of the elastic cofferdam 20 is greater than the height of the semiconductor light-emitting chip 12, so that when the upper jig 2 moves downward and approaches the lower jig 1, it can be pressed against the top of the elastic cofferdam 20, and there is a certain distance between it and the semiconductor light-emitting chip 12. This distance can also determine the thickness of the film layer to be formed on the semiconductor light-emitting device 10.

[0096] The elastic cofferdam 20 can be an annular structure or formed by connecting at least two cofferdams. Furthermore, the elastic cofferdam 20 is made of an elastic material, such as silicone or rubber, that has a certain degree of deformation under external pressure. S2. Glue 30 is placed on the semiconductor light-emitting device 10 and positioned within the inner ring of the elastic cofferdam 20.

[0097] The adhesive 30 primarily covers the first surface of the substrate 11 facing the upper jig 2 and the semiconductor light-emitting chip 12. The second surface of the substrate 11 faces and is positioned on the lower jig 1. When electronic components are provided on the second surface of the substrate 12, a hollow portion is provided on the lower jig 1 to accommodate the electronic components and ensure that the substrate 11 is firmly attached to the lower jig 1.

[0098] The glue 30 has a certain viscosity and can form a bulge on the semiconductor light emitting device 10 , so that the highest part can be higher than the elastic cofferdam 20 in height.

[0099] In order to avoid the problem of voids in the adhesive film layer formed subsequently, the process further includes: vacuuming to remove bubbles in the adhesive solution 30 .

[0100] To facilitate the vacuum process, the space where the upper fixture 2 and the lower fixture 1 are located is a closed space. After placing the semiconductor light-emitting device 10, the elastic cofferdam 20 and the glue 30, the vacuum device is connected to vacuum the closed space to remove the bubbles in the glue 30.

[0101] The adhesive 30 can be made of, but is not limited to, at least one of modified epoxy resin, modified silicone, epoxy resin, and silicone. Furthermore, the adhesive 30 can be colorless and transparent, or translucent as needed, or be doped with at least one of light-diffusing powder, coloring powder, and photoluminescent powder.

[0102] Light-diffusing powders can be, but are not limited to, glass powders, ceramic powders, oxide powders, and nitride powders in micron, submicron, or nanometer particle sizes. Coloring powders can be, but are not limited to, melanin, carbon black, and oxide powders in micron, submicron, or nanometer particle sizes. Photoluminescent powders can be phosphors and / or quantum dots; phosphors include, but are not limited to, YAG phosphors, oxide phosphors, nitride phosphors, fluoride phosphors, aluminate phosphors, silicate phosphors, and oxynitride phosphors; quantum dots include, but are not limited to, silicon quantum dots, germanium quantum dots, cadmium sulfide quantum dots, cadmium selenide quantum dots, cadmium telluride quantum dots, zinc selenide quantum dots, lead sulfide quantum dots, lead selenide quantum dots, indium phosphide quantum dots, and indium arsenide quantum dots.

[0103] S3 , the upper fixture 2 moves downward until it presses against the glue 30 and the top of the elastic cofferdam 10 , so that the glue 30 fills the space defined between the upper fixture 2 and the elastic cofferdam 20 and evenly covers the semiconductor light emitting device 10 .

[0104] Driven by a drive mechanism, the upper jig 2 moves downward at a predetermined speed toward the lower jig 1 until it presses against the adhesive 30 and the top of the elastic cofferdam 20. Pressed by the upper jig 2, the adhesive 30 flows and fills the surrounding space. Once the upper jig 2 contacts the top of the elastic cofferdam 20, it closes the inner space of the elastic cofferdam 20 (i.e., the space defined between the upper jig 2 and the elastic cofferdam 20), confining the adhesive 30 within this inner space.

[0105] According to the inner volume of the elastic cofferdam 20 and the thickness of the adhesive film layer required on the semiconductor light emitting device 10, the adhesive liquid 30 should be provided in sufficient amount or slightly in excess.

[0106] The surface of the upper fixture 2 facing the lower fixture 1 can be provided with a groove to form a glue buffer space. After the upper fixture 2 moves downward to press the glue and the top of the elastic cofferdam 20, the excess glue is squeezed into the glue buffer space of the upper fixture 2.

[0107] In order to ensure that the glue 30 can evenly cover the surface of the semiconductor light-emitting device 10 and the covering thickness is uniform, the upper fixture 2 can continue to press down after abutting the top of the elastic cofferdam 20, so that the top of the elastic cofferdam 20 is deformed and the glue 30 is pressed to fill the entire inner circle space.

[0108] An auxiliary cofferdam (not shown) can also be provided outside the elastic cofferdam 20 to surround the elastic cofferdam 20. When excess adhesive 30 overflows from the elastic cofferdam 20, the overflowed adhesive 30 can be confined between the elastic cofferdam 20 and the auxiliary cofferdam. The height of the auxiliary cofferdam is generally equal to or greater than that of the elastic cofferdam 20. The configuration and materials of the auxiliary cofferdam can refer to those of the elastic cofferdam 20.

[0109] To prevent the upper jig 2 from moving too far or too far downward, the lower jig 1 is further provided with at least one limiting post 40; the limiting post 40 is located outside the elastic cofferdam 20. The limiting post 40 is less than the sum of the heights of the elastic cofferdam 20 and the substrate 11, and is greater than the height of the semiconductor light-emitting device 10 on the lower jig 1.

[0110] When the upper jig 2 moves downward until it abuts against the limiting pillar 40 , the upper jig 2 stops moving.

[0111] S4 , performing a heating and curing process to form a uniform adhesive film layer on the adhesive solution 30 , and the adhesive film layer covers the semiconductor light emitting device 10 .

[0112] Specifically, a heating device is provided in the upper fixture 2 and / or the lower fixture 1, which has a heating function. During curing, the heating function is activated to heat and cure the adhesive 30. The cured adhesive 30 forms an adhesive film layer.

[0113] Alternatively, the lower jig 1 can be placed on a platform with a heating function, and the heating function of the platform can be activated to transfer heat to the lower jig 1, so that the lower jig 1 is heated to the temperature required to cure the adhesive. Alternatively, a pressure platform provided above the upper jig 2 can be heated to the temperature required to cure the adhesive by activating the heating function of the pressure platform and transferring heat to the upper jig 2, so that the upper jig 2 is heated to the temperature required to cure the adhesive.

[0114] After heating and curing, the thickness of the adhesive film layer on the substrate 11 is equal to the height of the elastic cofferdam 20 after being compressed.

[0115] S5. The upper fixture 2 moves upward and separates from the film layer.

[0116] After the curing process is completed, the upper fixture 2 moves upward to separate from the film layer and the elastic cofferdam 20 .

[0117] In order to better separate the upper fixture 2 from the film layer, before the upper fixture 2 moves downward, a release film layer is pre-set on the pressing area of the upper fixture 2. The release film layer can be formed by laminating a release film or coating a release agent.

[0118] S6 , removing the semiconductor light emitting device 10 with the adhesive film layer and the elastic cofferdam 20 from the lower fixture 1 as a whole, and cutting off the elastic cofferdam 20 and the edge of the substrate 11 thereunder.

[0119] During the cutting process, a portion of the film layer adjacent to the elastic cofferdam 20 may also be cut off.

[0120] Furthermore, after the elastic cofferdam 20 is cut off, the adhesive film layer is heated and cured again.

[0121] On the surface of the semiconductor light emitting device 10 , the thickness of the adhesive film layer on the semiconductor light emitting chip 12 = the height of the elastic dam 20 minus the height of the semiconductor light emitting chip 12 .

[0122] Depending on the material of the glue 30 , the formed glue film layer can be a functional film layer such as a protective layer, a fluorescent layer, a light shielding layer or a light diffusion layer.

[0123] In other embodiments of the lamination method for semiconductor light-emitting devices of the present invention, a guiding and positioning structure is further provided between the upper jig and the lower jig to guide the upper jig 2 to move vertically downward toward the lower jig 1 .

[0124] like Figure 5 As shown, in the lamination method for semiconductor light-emitting devices according to the third embodiment of the present invention, based on the first or second embodiments described above, the lower jig 1 is provided with a positioning post 51 extending toward the upper jig 2, and the upper jig 2 is provided with a positioning hole 52 that matches the positioning post 51. In the inactive state, the top of the positioning post 51 fits within the positioning hole 52, maintaining the alignment of the upper jig 2 and the lower jig 1. When the upper jig 2 moves downward, it engages with the positioning post 51 through the positioning hole 52 and moves downward along the axial direction of the positioning post 51, approaching the lower jig 1.

[0125] like Figure 6 As shown, in the fourth embodiment of the semiconductor light-emitting device lamination method of the present invention, based on the first or second embodiment described above, the lower jig 1 is provided with a positioning post 51 extending toward the upper jig 2, and a spring 53 is sleeved on the positioning post 51; the upper jig 2 is provided with a positioning hole 52 that matches the positioning post 51. In the unactivated state, the top of the positioning post 51 can fit within the positioning hole 52, keeping the upper jig 2 and the lower jig 1 always aligned. When the upper jig 2 moves downward, it cooperates with the positioning post 51 through the positioning hole 52 and moves downward along the axial direction of the positioning post 51, approaching the lower jig 1.

[0126] Combine Figure 6 、 Figure 1 In the natural state, the height of the spring 53 is greater than the height of the elastic cofferdam 20.

[0127] In the unactivated state, when the upper fixture 2 accidentally moves downward, it can be blocked by the elastic force of the spring 53 when it abuts against the spring 53, thereby preventing it from moving further downward to press down the semiconductor light emitting device 10 and other structural components on the lower fixture 1.

[0128] Since the lower jig 1 is provided with a limiting pillar 40 , the height of the spring 53 on the lower jig 1 should also be higher than the height of the limiting pillar 40 , so that the upper jig 2 that moves downward accidentally can be limited above the limiting pillar 40 .

[0129] The above-described method for laminating a semiconductor light-emitting device provides a semiconductor light-emitting device having an adhesive film layer. The semiconductor light-emitting device comprises a semiconductor light-emitting device body and an adhesive film layer formed thereon. The semiconductor light-emitting device body comprises a substrate and a semiconductor light-emitting chip, with the semiconductor light-emitting chip disposed on a first surface of the substrate. The adhesive film layer primarily covers the first surface of the substrate and the semiconductor light-emitting chip, protecting the entire semiconductor light-emitting device surface having the semiconductor light-emitting chip or providing corresponding functions such as light shielding, light transmission, and light diffusion. The adhesive film layer exhibits good uniformity and a superior aesthetic appearance.

[0130] The above descriptions are merely embodiments of the present invention and are not intended to limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made using the contents of the present invention's description and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A method for laminating a semiconductor light-emitting device, characterized in that: The method is conducive to laminating multiple semiconductor light-emitting devices at the same time, and the lamination method of the semiconductor light-emitting device includes the following steps: S1. Positioning a semiconductor light-emitting device and an elastic cofferdam on a lower fixture, and setting the elastic cofferdam around the semiconductor light-emitting device; setting an auxiliary cofferdam around the elastic cofferdam, wherein the height of the auxiliary cofferdam is equal to or greater than the height of the elastic cofferdam; The semiconductor light emitting device includes a substrate and a semiconductor light emitting chip arranged on a first surface of the substrate; the second surface of the substrate faces and is positioned on the lower fixture; S2, placing glue on the semiconductor light emitting device and located on the inner circle of the elastic cofferdam; The glue forms an arch on the semiconductor light emitting device, and the height of the highest part is higher than the height of the elastic cofferdam; After step S2, the process further includes: vacuuming to remove bubbles in the glue liquid; the vacuuming is to vacuum the enclosed space where the upper fixture and the lower fixture are located, thereby removing bubbles in the glue liquid; S3. The upper jig moves downward until it presses against the top of the glue and the elastic cofferdam, so that the glue fills the space defined between the upper jig and the elastic cofferdam and evenly covers the semiconductor light-emitting device; the lower jig is further provided with at least one limiting pillar; the limiting pillar is located outside the elastic cofferdam, and the height of the semiconductor light-emitting device is less than the height of the limiting pillar and less than the height of the elastic cofferdam; the upper jig moves downward until it abuts against the limiting pillar; The upper jig is provided with a groove on the surface facing the lower jig to form a glue buffer space. When the upper jig moves downward to press the glue and the top of the elastic cofferdam, excess glue is squeezed into the glue buffer space. When the glue overflows the elastic cofferdam, the overflowed glue is confined between the elastic cofferdam and the auxiliary cofferdam. After the upper fixture contacts the top of the elastic cofferdam, it continues to press downward, deforming the top of the elastic cofferdam and pressing the glue to fill the entire inner circle space of the elastic cofferdam, ensuring that the glue can cover the entire surface of the semiconductor light-emitting device with a uniform coverage thickness; the glue covers the first surface of the substrate and the semiconductor light-emitting chip thereon; Before the upper jig moves downward, a release film layer is pre-applied to the pressing area of the upper jig; S4, heating and curing the adhesive to form a uniform adhesive film layer; after heating and curing, the thickness of the adhesive film layer on the first surface of the substrate is equal to the height of the elastic cofferdam after being compressed - the thickness of the substrate; S5, the upper jig moves upward and separates from the film layer; S6. Remove the semiconductor light-emitting device with the adhesive film layer and the elastic cofferdam from the lower fixture, and cut off the elastic cofferdam.

2. The method for laminating a semiconductor light emitting device according to claim 1, wherein: In step S1, on the lower fixture, the height of the elastic cofferdam is greater than the height of the semiconductor light emitting device.

3. The method for laminating a semiconductor light emitting device according to claim 1, wherein: The semiconductor light emitting device further includes electronic components disposed on the second surface of the substrate; In step S1 , a hollow area is provided on the lower jig, and when the second surface of the substrate faces and is positioned on the lower jig, the electronic component is accommodated in the hollow area.

4. The method for laminating a semiconductor light emitting device according to claim 1, wherein: After step S6, the adhesive film layer is heated again to be cured.

5. The method for laminating a semiconductor light emitting device according to any one of claims 1 to 4, characterized in that: The lower jig is further provided with a positioning post extending toward the upper jig, and the upper jig is provided with a positioning hole adapted to the positioning post; In step S3, when the upper jig moves downward, it cooperates with the positioning post through the positioning hole and moves downward along the positioning post to approach the lower jig.

6. The method for laminating a semiconductor light emitting device according to claim 5, wherein: A spring is sleeved on the positioning column; in a natural state, the height of the spring is greater than the height of the elastic cofferdam.

7. A method for laminating a semiconductor light-emitting device, characterized in that: The method is conducive to laminating multiple semiconductor light-emitting devices at the same time, and the lamination method of the semiconductor light-emitting device includes the following steps: S1. Positioning a semiconductor light-emitting device on a lower jig, disposing an elastic cofferdam on an edge of a substrate of the semiconductor light-emitting device and located around a semiconductor light-emitting chip of the semiconductor light-emitting device; disposing an auxiliary cofferdam around the elastic cofferdam; the semiconductor light-emitting device comprises a substrate and a semiconductor light-emitting chip disposed on a first surface of the substrate; the second surface of the substrate faces and is positioned on the lower jig; S2, placing glue on the semiconductor light emitting device and located on the inner circle of the elastic cofferdam; The glue forms an arch on the semiconductor light emitting device, and the height of the highest part is higher than the height of the elastic cofferdam; After step S2, the process further includes: vacuuming to remove bubbles in the glue liquid; the vacuuming is to vacuum the enclosed space where the upper fixture and the lower fixture are located, thereby removing bubbles in the glue liquid; S3. The upper jig moves downward until it presses against the top of the glue and the elastic cofferdam, so that the glue fills the space defined between the upper jig and the elastic cofferdam and evenly covers the semiconductor light-emitting device; the lower jig is further provided with at least one limiting pillar; the height of the semiconductor light-emitting device is less than the height of the limiting pillar and less than the sum of the height of the elastic cofferdam and the height of the substrate; the upper jig moves downward until it abuts against the limiting pillar; The upper jig is provided with a groove on the surface facing the lower jig to form a glue buffer space. When the upper jig moves downward to press the glue and the top of the elastic cofferdam, excess glue is squeezed into the glue buffer space. When the glue overflows the elastic cofferdam, the overflowed glue is confined between the elastic cofferdam and the auxiliary cofferdam. After the upper jig contacts the top of the elastic cofferdam, it continues to press downward to deform the top of the elastic cofferdam, pressing the glue to fill the entire inner circle space of the elastic cofferdam, ensuring that the glue can cover the entire surface of the semiconductor light-emitting device with a uniform coverage thickness; The glue covers the first surface of the substrate facing the upper jig and the semiconductor light-emitting chip; before the upper jig moves downward, a release film layer is pre-set on the pressing area of the upper jig; S4, heating and curing the adhesive to form a uniform adhesive film layer; After heating and curing, the thickness of the adhesive film layer on the substrate is equal to the height of the elastic cofferdam after being compressed; S5, the upper jig moves upward and separates from the film layer; S6, removing the semiconductor light emitting device with the adhesive film layer and the elastic cofferdam from the lower fixture as a whole, and cutting off the elastic cofferdam and the edge of the substrate thereunder.

8. The method for laminating a semiconductor light emitting device according to claim 7, wherein: In step S1, on the substrate, the height of the elastic dam is greater than the height of the semiconductor light-emitting chip.

9. The method for laminating a semiconductor light emitting device according to claim 7, wherein: After step S6, the adhesive film layer is heated again to be cured.

10. The film lamination method of a semiconductor light emitting device according to any one of claims 7 to 9, characterized in that: The lower jig is further provided with a positioning post extending toward the upper jig, and the upper jig is provided with a positioning hole adapted to the positioning post; In step S3, when the upper jig moves downward, it cooperates with the positioning post through the positioning hole and moves downward along the positioning post to approach the lower jig.

11. The method for laminating a semiconductor light emitting device according to claim 10, wherein: A spring is sleeved on the positioning column; in a natural state, the height of the spring is greater than the sum of the height of the elastic cofferdam and the height of the base plate.

12. A semiconductor light-emitting device, comprising a semiconductor light-emitting device body and an adhesive film layer arranged on the semiconductor light-emitting device body; the adhesive film layer is formed by the semiconductor light-emitting device lamination method according to any one of claims 1 to 6 or the semiconductor light-emitting device lamination method according to any one of claims 7 to 11.

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