A dual-wavelength semiconductor laser module and a preparation method thereof

Abstract

An embodiment of the present invention provides a dual-wavelength semiconductor laser module, which includes a first semiconductor wavelength laser, an electrically series-connected heat sink, and a second semiconductor wavelength laser. Among them, the first wavelength is greater than the second wavelength. The P surfaces of the first semiconductor wavelength laser and the second semiconductor wavelength laser are respectively installed on the upper surface and the lower surface of the electrically series-connected heat sink to achieve the output power control of the dual-wavelength laser. By means of the electrically series-connected heat sink, the distance between the light-emitting windows of the two lasers is reduced to within 100 micrometers, the light field superposition ratio of the two lasers is increased, and at the same time, the waste heat of the two lasers can be quickly dissipated, improving the working stability of the laser device. An embodiment of the present invention also provides a preparation method for the dual-wavelength semiconductor laser module.

Description

Technical Field

[0001] The present invention relates to the field of semiconductors, and particularly to a dual-wavelength semiconductor laser module and a preparation method thereof. Background Art

[0002] A semiconductor laser is a device that generates laser using a semiconductor material as a gain medium, and has advantages such as high laser power, high electro-optical conversion efficiency, low power consumption, small size, light weight, and direct electrical pumping. It has broad application prospects in fields such as laser display and laser lighting. Among them, laser lighting is a lighting method that uses semiconductor laser modules with multiple wavelengths as light sources, and visible lasers with different wavelengths such as red, green, and blue need to be beam-superimposed in a certain proportion to form a superimposed beam that meets the lighting requirements of specific scenarios. To ensure the superimposition effect of multiple-wavelength beams, high requirements are put forward for the beam quality of laser devices and the design of external optical paths.

[0003] Existing multi-wavelength semiconductor laser modules mainly include multi-wavelength laser modules such as single-chip dual-wavelength laser modules, dual-wavelength laser modules based on reflection units, and dual-wavelength modules based on frequency doubling crystals. Although multi-wavelength semiconductor laser modules have made great progress in improving output power and multi-beam coupling, various problems still exist in each type of multi-wavelength module. For a single-chip dual-wavelength laser module (Chinese Patent Application No. 200510072977.5), a mode selection waveguide structure with slight differences is usually set on a semiconductor laser chip, such as Bragg gratings with different periods, Bragg gratings with different etching depths, etc. Although dual-wavelength laser output can be achieved, the interval between the output dual wavelengths is limited, usually less than 20 nm, and it is generally used in communication fields such as wavelength division multiplexing, and its application in the lighting field is limited. For a dual-wavelength laser module based on a reflection unit (Chinese Patent Application Nos. 201921471919.3, 202111118088.3, 202110508175.3), usually two or more semiconductor lasers are used, and multiple laser beams are coupled through a focusing lens and a reflection unit, such as a diffraction grating, a mirror, etc., to obtain a high-power multi-wavelength laser beam. However, its structure is very complex, the volume is large, and the cost is high, which cannot meet the requirements of the lighting field for miniaturized light sources. For a dual-wavelength module based on a frequency doubling crystal (Chinese Patent Application No. 202022495299.6), an optical path is constructed by using a fundamental frequency light source, a frequency doubling crystal, and optical elements. The frequency doubling crystal is pumped by the fundamental frequency light source to obtain frequency doubling light with a wavelength that is only 1 / 2 of the fundamental frequency wavelength. By adjusting the optical elements, the fundamental frequency light and the frequency doubling light can be output separately or simultaneously to achieve multi-wavelength lasing. The output wavelength of this laser module is strongly related to the fundamental frequency wavelength, the adjustable coverage range of the dual-wavelength spectrum is small, and at the same time, the frequency doubling process will reduce the overall electro-optical conversion efficiency of the module, which is not conducive to its application in the lighting field.

[0004] Conventional multi-wavelength laser modules generally use dual-wavelength semiconductor laser chips or complex coupling optical paths to achieve multi-wavelength laser output. This leads to problems such as a small output wavelength interval of the module, or a complex structure and high cost. These problems seriously affect the application prospects of multi-wavelength modules in the field of laser lighting. Summary of the Invention

[0005] In view of this, embodiments of the present invention provide a dual-wavelength semiconductor laser module and a preparation method thereof.

[0006] In a first aspect, the present invention provides a dual-wavelength semiconductor laser module, including: a first semiconductor wavelength laser, an electrically series-connected heat sink, and a second semiconductor wavelength laser. Among them, the first wavelength is greater than the second wavelength. The P surface of the first semiconductor wavelength laser and the P surface of the second semiconductor wavelength laser are respectively installed on the upper surface and the lower surface of the electrically series-connected heat sink. The first semiconductor wavelength laser and the second semiconductor wavelength laser are symmetrically distributed about the center axis. The first semiconductor wavelength laser has a first wavelength positive metal layer and a first negative lead. The second semiconductor wavelength laser has a second wavelength positive metal layer, a second wavelength negative metal layer, and a second negative lead. The second wavelength negative metal layer is electrically connected to the second negative lead, and the first negative lead is electrically connected to the second wavelength positive metal layer.

[0007] As an optional solution, the material of the electrically series-connected heat sink is any one of silicon carbide, diamond, and aluminum nitride with a thickness of 50-100 microns.

[0008] As an optional solution, it further includes a module overall positive electrode and a module overall negative electrode. The module overall positive electrode is electrically connected to the first wavelength positive metal layer, and the module overall negative electrode is electrically connected to the second wavelength negative metal layer.

[0009] As an optional solution, the first wavelength positive metal layer extends from the lower surface to the upper surface on one side of the electrically series-connected heat sink, and the second wavelength negative metal layer extends from the lower surface to the upper surface on the other side of the electrically series-connected heat sink.

[0010] As an optional solution, the material system of the dual-wavelength semiconductor laser module is gallium nitride GaN, gallium arsenide GaAs, indium phosphide InP, or gallium antimonide GaSb, and the range of the laser wavelength is 400nm to 2500nm.

[0011] As an optional solution, both the first negative lead and the second negative lead are made of gold wire.

[0012] Second aspect, the present invention provides a method for manufacturing a dual-wavelength semiconductor laser module. The dual-wavelength semiconductor laser module includes a first semiconductor wavelength laser, an electrically series-connected heat sink, and a second semiconductor wavelength laser, where the first wavelength is greater than the second wavelength. The method includes:

[0013] Weld the first semiconductor wavelength laser and the second semiconductor wavelength laser to the upper surface and the lower surface of the electrically series-connected heat sink respectively.

[0014] The dual-wavelength semiconductor laser module provided by the present invention adopts a dual-wavelength beam superposition technology based on an electrically series-connected heat sink packaging structure, which solves the problems of small wavelength interval, complex structure, and high cost of existing multi-wavelength laser modules. According to the beam divergence angle and heat dissipation requirements during the operation of each laser chip, the thickness of the heat sink is optimized to make more than 90% of the light energy emitted by each laser chip superpose, while ensuring the efficient export of the waste heat of the laser chip, realizing the uniform superposition of the energy of multi-wavelength laser beams. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a schematic structural diagram of a dual-wavelength semiconductor laser module provided in an embodiment of the present invention;

[0016] Figure 2 It is a schematic side view structural diagram of a dual-wavelength semiconductor laser module provided in an embodiment of the present invention;

[0017] Figure 3 It is a schematic top view structural diagram of a dual-wavelength semiconductor laser module provided in an embodiment of the present invention;

[0018] Figure 4 It is a schematic bottom view structural diagram of a dual-wavelength semiconductor laser module provided in an embodiment of the present invention;

[0019] Figure 5 It is a schematic front view structural diagram of a dual-wavelength semiconductor laser module provided in an embodiment of the present invention;

[0020] Figure 6 It is a schematic diagram of the optical field superposition of a dual-wavelength semiconductor laser module provided in an embodiment of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0021] In order to enable those skilled in the art to better understand the solution of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0022] In the description, claims and the above-mentioned drawings of the present invention, the terms "first", "second", "third", "fourth", etc. are used to distinguish similar objects and do not necessarily describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances so that the embodiments described herein can be implemented in an order other than that illustrated or described herein. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device comprising a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0023] Combined with Figures 1 to 6 As shown, the present invention provides a dual-wavelength semiconductor laser module, comprising: a first semiconductor wavelength laser 101, an electrically series-connected heat sink 102, and a second semiconductor wavelength laser 103, wherein the first wavelength is greater than the second wavelength, the P surface of the first semiconductor wavelength laser 101 and the P surface of the second semiconductor wavelength laser 103 are respectively mounted on the upper surface and the lower surface of the electrically series-connected heat sink 102, the first semiconductor wavelength laser 101 and the second semiconductor wavelength laser 103 are symmetrically distributed about the middle axis, the first semiconductor wavelength laser 101 has a first wavelength positive metal layer 202 and a first negative lead 203, the second semiconductor wavelength laser 103 has a second wavelength positive metal layer 204, a second wavelength negative metal layer 201 and a second negative lead 205, the second wavelength negative metal layer 201 is electrically connected to the second negative lead 205, and the first negative lead 203 is electrically connected to the second wavelength positive metal layer 204.

[0024] Combined with Figures 1 to 6 As shown, in some embodiments, the first semiconductor wavelength laser 101 uses a long-wavelength semiconductor laser, and the second semiconductor wavelength laser 103 uses a short-wavelength semiconductor laser. Specifically, the dual-wavelength semiconductor laser module comprises, from top to bottom along the Z direction: a long-wavelength semiconductor laser, an electrically series-connected heat sink 102, and a short-wavelength semiconductor laser. The two semiconductor lasers form an electrically series-connected dual-wavelength semiconductor laser module through gold wires and the patterned metal layer on the surface of the heat sink.

[0025] Optionally, the material of the electrically series-connected heat sink is any one of silicon carbide, diamond, and aluminum nitride with a thickness of 50-100 microns.

[0026] Optionally, it further includes an overall module positive electrode 301 and an overall module negative electrode 302. The overall module positive electrode 301 is electrically connected to the first wavelength positive metal layer 202, and the overall module negative electrode 302 is electrically connected to the second wavelength negative metal layer 201.

[0027] Optionally, the first wavelength positive metal layer 202 extends from the lower surface to the upper surface on one side of the electrically series-connected heat sink 102, and the second wavelength negative metal layer 201 extends from the lower surface to the upper surface on the other side of the electrically series-connected heat sink 102.

[0028] Optionally, the material system of the dual-wavelength semiconductor laser module is gallium nitride (GaN), gallium arsenide (GaAs), indium phosphide (InP), or gallium antimonide (GaSb), and the range of the laser wavelength is 400 nm to 2500 nm.

[0029] Optionally, both the first negative lead 203 and the second negative lead 205 are made of gold wire.

[0030] The dual-wavelength semiconductor laser module includes a first wavelength semiconductor laser 101, an electrically series-connected heat sink 102, and a second short-wavelength semiconductor laser 103. The structures of the laser module are arranged in sequence along the Z direction, and the functions of each part are as follows: The first wavelength semiconductor laser 101 and the second short-wavelength semiconductor laser 103 are used as laser emitting devices, and the selectable range of the emitted wavelength is 400 nm - 2500 nm. The P surfaces of the two semiconductor lasers are respectively welded to the upper surface and the lower surface of the electrically series-connected heat sink 102, showing a central axisymmetric distribution. Through the surface electrode metal layer and the gold wire leads of the electrically series-connected heat sink 102, a semiconductor laser series array is constructed. Using the overall module positive electrode 301 and the overall module negative electrode 302 as current input and output interfaces, the injection current is regulated to ensure the voltage requirements of lasers with different wavelengths. The energy bandgaps of the semiconductor materials of semiconductor lasers with different wavelengths are different, and the turn-on voltages for starting work vary greatly. The output power of the dual-semiconductor wavelength lasers is controlled. By the electrically series-connected heat sink 102, the distance between the light-emitting windows of the two lasers is reduced to within 100 microns, the light field superposition ratio of the two lasers is increased, and at the same time, the waste heat of the two lasers can be quickly exported to improve the working stability of the laser device.

[0031] Combined Figures 1 to 6 As shown, the present invention provides a preparation method for a dual-wavelength semiconductor laser module. The dual-wavelength semiconductor laser module includes a first semiconductor wavelength laser, an electrically series-connected heat sink, and a second semiconductor wavelength laser, and the first wavelength is greater than the second wavelength. The method includes:

[0032] Welding the first semiconductor wavelength laser and the second semiconductor wavelength laser to the upper surface and the lower surface of the electrically series-connected heat sink respectively.

[0033] Combined Figure 5 with 6 As shown, for the dual-wavelength semiconductor laser module based on the electrical series heat sink packaging structure, its manufacturing process is as follows: In this embodiment, the material system of the semiconductor laser can be selected from gallium nitride (GaN), gallium arsenide (GaAs), indium phosphide (InP), or gallium antimonide (GaSb), and the laser wavelength can be selected from 400 nm to 2500 nm, but is not limited to the above materials and laser wavelengths. The laser module structure consists of a first-wavelength semiconductor laser 101, an electrical series heat sink 102, and a second-wavelength semiconductor laser 103. The first-wavelength semiconductor laser 101 and the second-wavelength semiconductor laser 103 are respectively welded to the upper surface and the lower surface of the electrical series heat sink 102, and both are P-face welded to the heat sink surface. By selecting the thickness and material of the electrical series heat sink 102, such as materials like silicon carbide, diamond, aluminum nitride, etc. with a thickness of 50 - 100 microns, the waste heat generated by the laser can be effectively conducted out through the electrical series heat sink 102. At the same time, the distance between the light-emitting windows of the two lasers can be reduced to 60 - 110 microns. When the fast-axis divergence angles of the laser beams emitted by the two lasers are 60°, when the two laser beams are transmitted for 2 mm, more than 95% of the energy will be spatially superimposed. This spatially superimposed laser beam will form a dual-wavelength light spot with a uniform energy distribution after subsequent collimation and beam expansion, providing a new technical solution for the laser illumination field with a simple structure for the dual-wavelength laser module.

[0034] The dual-wavelength semiconductor laser module provided by the present invention adopts the dual-wavelength beam superposition technology based on the electrical series heat sink packaging structure, solving the problems of small wavelength intervals, complex structures, and high costs of existing multi-wavelength laser modules. According to the beam divergence angles and heat dissipation requirements during the operation of each laser chip, the thickness of the heat sink is optimized to enable the superposition of more than 90% of the light energy emitted by each laser chip, while ensuring the efficient export of the waste heat of the laser chip, realizing the uniform superposition of multi-wavelength laser beams.

[0035] It should be understood that various forms of processes shown above can be used, reordering, adding, or deleting steps. For example, the steps recorded in the present disclosure can be executed in parallel, sequentially, or in different orders, as long as the desired results of the technical solution disclosed in the present invention can be achieved, and no limitations are imposed herein.

[0036] The above specific embodiments do not constitute a limitation to the protection scope of the present invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.

Claims

1. A dual-wavelength semiconductor laser module, characterized in that, Comprising: A first semiconductor wavelength laser, an electrically series-connected heat sink, and a second semiconductor wavelength laser, wherein the first wavelength is greater than the second wavelength, the P-face of the first semiconductor wavelength laser and the P-face of the second semiconductor wavelength laser are respectively mounted on the upper surface and the lower surface of the electrically series-connected heat sink, the first semiconductor wavelength laser and the second semiconductor wavelength laser are symmetrically distributed about the center axis, the first semiconductor wavelength laser has a first wavelength positive metal layer and a first negative lead, the second semiconductor wavelength laser has a second wavelength positive metal layer, a second wavelength negative metal layer, and a second negative lead, the second wavelength negative metal layer and the second negative lead are electrically connected, and the first negative lead is electrically connected to the second wavelength positive metal layer.

2. The dual-wavelength semiconductor laser module according to claim 1, characterized in that, The material of the electrically series-connected heat sink is any one of silicon carbide, diamond, and aluminum nitride with a thickness of 50 - 100 microns.

3. The dual-wavelength semiconductor laser module according to claim 1, wherein It further includes a module overall positive electrode and a module overall negative electrode, the module overall positive electrode is electrically connected to the first wavelength positive metal layer, and the module overall negative electrode is electrically connected to the second wavelength negative metal layer.

4. The dual-wavelength semiconductor laser module according to claim 1, wherein The first wavelength positive metal layer extends from the lower surface to the upper surface on one side of the electrically series-connected heat sink, and the second wavelength negative metal layer extends from the lower surface to the upper surface on the other side of the electrically series-connected heat sink.

5. The dual-wavelength semiconductor laser module according to claim 1, characterized in that, The material system of the dual-wavelength semiconductor laser module is gallium nitride (GaN), gallium arsenide (GaAs), indium phosphide (InP), or gallium antimonide (GaSb), and the range of the laser wavelength is 400 nm to 2500 nm.

6. The dual-wavelength semiconductor laser module according to claim 1, characterized in that, Both the first negative lead and the second negative lead are made of gold wire.

7. A method for preparing a dual-wavelength semiconductor laser module according to any one of claims 1 to 6, characterized in that, The dual-wavelength semiconductor laser module includes a first semiconductor wavelength laser, an electrically series-connected heat sink, and a second semiconductor wavelength laser, with the first wavelength being greater than the second wavelength. The method includes: Welding the first semiconductor wavelength laser and the second semiconductor wavelength laser to the upper surface and the lower surface of the electrically series-connected heat sink respectively.

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