Process chambers and semiconductor processing equipment

Abstract

The present invention discloses a process chamber and semiconductor process equipment, and relates to the field of semiconductor manufacturing technology. The process chamber includes a grounded cavity and a liner, a lower electrode device, an adjustable inductance device and a capacitance adjustment member arranged in the cavity; the liner is arranged around the outer side of the lower electrode device, and there is a gap between the liner and the inner wall of the cavity, and the capacitance adjustment member can be raised and lowered in the gap to adjust the capacitance value of the liner to the ground; one end of the adjustable inductance device is connected to the liner, and the other end is grounded to adjust the inductance value of the liner to the ground. This solution can solve the problem that the wafer etching rate and selectivity cannot be adjusted independently during the semiconductor manufacturing process.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a process chamber and semiconductor process equipment. Background Art

[0002] With the upgrading of integrated circuit technology, the requirements for semiconductor process equipment are getting higher and higher. In the semiconductor etching process, the etching rate of the conductor process equipment is affected by many factors such as gas flow field, temperature field, geomagnetic field, coil magnetic field, electric field, etc. In addition, in the related art, it is difficult for semiconductor process equipment used in semiconductor manufacturing process to take into account both wafer etching rate and selectivity when adjusting the wafer etching rate. Summary of the invention

[0003] The invention discloses a process chamber and semiconductor process equipment, which are used to solve the problem that the wafer etching rate and the selection ratio cannot be adjusted independently in the semiconductor manufacturing process.

[0004] In order to solve the above problems, the present invention adopts the following technical solutions:

[0005] The process chamber described in the present invention includes a grounded cavity and a liner, a lower electrode device, an adjustable inductance device and a capacitance adjustment member arranged in the cavity; the liner is arranged around the outer side of the lower electrode device, and there is a gap between the liner and the inner wall of the cavity, and the capacitance adjustment member can be raised and lowered in the gap to adjust the capacitance value of the liner to the ground; one end of the adjustable inductance device is connected to the liner, and the other end is grounded to adjust the inductance value of the liner to the ground.

[0006] Based on the process chamber described in the present invention, the present invention also provides a semiconductor process equipment. The semiconductor process equipment includes a first RF power supply, a second RF power supply, a first matcher, a second matcher, and a RF coil, as well as the process chamber described in the present invention. The RF coil is arranged opposite to the lower electrode device, the first RF power supply is connected to the RF coil through the first matcher; the second RF power supply is connected to the lower electrode device through the second matcher.

[0007] The technical solution adopted by the present invention can achieve the following beneficial effects:

[0008] In the process chamber disclosed in the embodiment of the present invention, the cavity is grounded, and the liner and the cavity are connected by an adjustable inductance device, so that the inductance of the liner to the ground can be formed, and the size of the inductance value of the liner to the ground can be adjusted by the adjustable inductance device. Further, there is a gap between the liner and the cavity so that the inner layer and the cavity form a capacitor structure. A capacitor adjustment member is arranged in the gap between the liner and the cavity, and the capacitance value of the liner to the ground can be adjusted by the capacitor adjustment member. Therefore, the process chamber described in the present application can adjust the inductance value of the liner to the ground by an adjustable inductance, and adjust the capacitance value of the liner to the ground by adjusting the capacitance adjustment member to adjust the corresponding impedance of the liner to the ground, so as to achieve the purpose of adjusting the wafer etching rate. In addition, this embodiment can achieve independent adjustment of the ion density and ion energy in the process chamber by adjusting the adjustable inductance and the capacitance adjustment member, that is, in the process of adjusting the ion density in the process chamber, the ion energy in the process chamber can be guaranteed to remain unchanged, or, in the process of adjusting the ion energy in the process chamber, the ion density can be kept unchanged. The greater the energy of the plasma, the greater the etching rate of the wafer; the smaller the density of the plasma, the lower the etching selectivity of the wafer. Therefore, the process chamber described in the present application can achieve independent adjustment of the etching rate and etching selectivity of the wafer through adjustable inductance and capacitance adjustment components to compensate for the influence of factors such as the airflow field, temperature field, geomagnetic field, coil magnetic field, electric field, etc. in the process chamber on the wafer etching rate, taking into account both the wafer etching rate and etching selectivity, which is beneficial to optimize the process parameters in the semiconductor manufacturing process. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0010] Figure 1 A schematic diagram of a process chamber in a first state according to an embodiment of the present invention;

[0011] Figure 2 A schematic diagram of a process chamber in a second state disclosed in an embodiment of the present invention;

[0012] Figure 3 A top view of a process chamber disclosed in an embodiment of the present invention;

[0013] Figure 4 An assembly diagram of a liner and a capacitance adjustment member disclosed in an embodiment of the present invention;

[0014] Figure 5 An equivalent circuit diagram of a process chamber disclosed in one embodiment of the present invention.

[0015] Figure 6A schematic diagram of the distribution of the electric field strength in the radial direction of the wafer when the focusing ring is at different heights according to an embodiment of the present invention;

[0016] Figure 7 A schematic diagram of the distribution of electric field strength in various regions of a wafer when the height of the focusing ring is 4 mm according to an embodiment of the present invention;

[0017] Figure 8 A schematic diagram of the distribution of electric field strength in various regions of a wafer when the focus ring height is -4 mm according to an embodiment of the present invention;

[0018] Fig. 9 A schematic diagram of the distribution of electric field strength in various regions of a wafer when the height of a focusing ring subassembly disclosed in an embodiment of the present invention gradually changes from one side of the wafer to the other side.

[0019] Description of reference numerals: 100-cavity; 110-side wall; 120-bottom wall; 200-lining; 210-lining sub-component; 211-first ring body; 212-second ring body; 213-connecting portion; 220-first isolating member; 221-inner isolating sub-component; 222-bottom wall isolating sub-component; 223-outer isolating sub-component; 300-lower electrode device; 310-lower electrode assembly; 311-chuck base; 312-chuck; 313-RF feed-in member; 314-third isolating member; 3 20-isolating ring; 330-focusing ring; 331-focusing ring sub-component; 340-third driving member; 400-adjustable inductance device; 410-inductance coil; 420-inductance adjustment core; 430-first driving member; 500-shielding cover; 600-capacitance adjustment member; 610-capacitance adjustment core; 620-second driving member; 700-second isolating member; 800-first matching device; 900-second matching device; 1000-RF coil; 1100-dielectric window; 1200-reaction chamber. DETAILED DESCRIPTION

[0020] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the specific embodiments of the present invention and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0021] The following combination Figures 1 to 9 , and describe in detail the technical solutions disclosed in each embodiment of the present invention.

[0022] Reference Figures 1 to 4The process chamber disclosed in one embodiment of the present invention includes a chamber body 100 and a liner 200, a lower electrode device 300, an adjustable inductance device 400 and a capacitance adjustment member 600. The chamber body 100 is a basic structural member and can provide an installation foundation for the liner 200, the lower electrode device 300, the adjustable inductance device 400 and / or the capacitance adjustment member 600.

[0023] In an optional embodiment, the cavity 100 is connected to a preset reference voltage terminal. Exemplarily, the preset reference voltage terminal may be a zero potential terminal. Optionally, the preset reference voltage terminal may be a ground terminal. This embodiment can make the potential difference between the cavity 100 and the ground constant. The liner 200 and the lower electrode device 300 are arranged in the cavity 100. Among them, the lower electrode device 300 is used to place the wafer. The liner 200 is arranged around the outer side of the lower electrode device 300, and there is a gap between the liner 200 and the inner wall of the cavity 100, so that the liner 200 and the cavity 100 form a capacitor structure. Furthermore, the capacitance adjustment member 600 can be raised and lowered in the gap, and then the capacitance value of the liner 200 to the ground can be adjusted by the capacitance adjustment member 600, so that the impedance of the liner 200 to the ground can be adjusted.

[0024] In one or more optional embodiments, one end of the adjustable inductor 400 is connected to the liner 200, and the other end is grounded, so as to adjust the ground inductance value of the liner 200. Exemplarily, one end of the adjustable inductor 400 is connected to the liner 200, and the other end is connected to the cavity 100. In this embodiment, the size of the ground inductance value of the liner 200 can be adjusted by using the adjustable inductor 400.

[0025] There are many factors that affect the inductance of the adjustable inductor device 400, such as the shape of the coil in the adjustable inductor device 400, the number of turns of the coil, and the material of the inner core inserted in the coil. Exemplarily, the inductance of the adjustable inductor device 400 can be adjusted by adjusting the shape of the coil in the adjustable inductor device 400, the number of turns of the coil, and the material of the inner core inserted in the coil. For different adjustment methods, the corresponding structure and type of the adjustable inductor device 400 are different. For this reason, this embodiment does not limit the specific structure of the adjustable inductor device 400.

[0026] It should be noted that the impedance between the liner 200 and the cavity 100 can affect the RF energy, and further affect the density of the plasma and the energy of the plasma. Furthermore, the greater the density of the plasma, the greater the etching selectivity; the greater the energy of the plasma, the greater the etching rate of the corresponding wafer. Therefore, the above embodiment can adjust the etching rate and etching selectivity of the wafer during the semiconductor process by adjusting the inductance and capacitance of the liner 200 to the ground.

[0027] In one or more optional embodiments, the adjustable inductance device 400 includes an inductance coil 410, an inductance adjustment core 420 and a first driving member 430, one end of the inductance coil 410 is connected to the lining 200, and the other end is connected to the cavity 100, and the first driving member 430 is connected to the inductance adjustment core 420 for driving the inductance adjustment core 420 to move in the direction of inserting or removing the inductance coil 410.

[0028] There are many types of the first driving member 430. For example, the first driving member 430 may be a connecting rod mechanism, a screw mechanism, a crank slider mechanism, etc. Therefore, the specific type of the first driving member 430 is not limited in this embodiment.

[0029] In an optional embodiment, the first driving member 430 includes a pull rod, so as to drive the inductance adjustment core 420 to move in the direction of inserting or removing the inductance coil 410 through the pull rod. In a further optional embodiment, the pull rod is rotatably connected to the inductance adjustment core 420, and a threaded section is provided on the pull rod so that the pull rod is threadedly matched with the cavity 100 through the threaded section. In the process of adjusting the inductance of the adjustable inductance device 400, the inductance adjustment core 420 can be driven to move in the direction of inserting or removing the inductance coil 410 by rotating the pull rod. Exemplarily, the inductance adjustment core 420 can be driven to move in the direction of inserting or removing the inductance coil 410 by manually operating the first driving member 430. Of course, the inductance adjustment core 420 can also be driven to move in the direction of inserting or removing the inductance coil 410 by a cylinder, a hydraulic cylinder, or a motor.

[0030] Exemplarily, the inductance adjustment core 420 can be made of a magnetic material, such as a magnet. Optionally, the inductance adjustment core 420 is a soft magnet. Specifically, the more the inductance adjustment core 420 is inserted into the inductance coil 410, the greater the inductance of the adjustable inductance device 400; the less the inductance adjustment core 420 is inserted into the inductance coil 410, the smaller the inductance of the adjustable inductance device 400. Therefore, the first drive member 430 drives the inductance adjustment core 420 to move in the direction of inserting the inductance coil 410, and the corresponding inductance of the adjustable inductance device 400 increases. The first drive member 430 drives the inductance adjustment core 420 to move in the direction of moving out of the inductance coil 410, and the corresponding inductance of the adjustable inductance device 400 decreases.

[0031] In one or more optional embodiments, the cavity 100 is provided with a first opening, and the first opening is opposite to the adjustable inductance device 400, so that maintenance personnel can perform maintenance on the adjustable inductance device 400 from the first opening. The process chamber further includes a shielding cover 500, which is detachably connected to the cavity 100 and covers the first opening to seal the first opening through the shielding cover 500. The shielding cover 500 is detachably connected to the cavity 100, so that maintenance personnel can perform maintenance on the adjustable inductance device 400.

[0032] In an optional embodiment, the number of the first opening and the shielding cover 500 can be multiple, and the first opening and the shielding cover 500 correspond to the adjustable inductor device 400 one by one. In another optional embodiment, the first opening and the shielding cover 500 can also be set to be ring-shaped. During the maintenance operation, the shielding cover 500 can be directly removed to observe the status of each adjustable inductor device 400.

[0033] Exemplarily, the shielding cover 500 and the cavity 100 may be connected by threaded fit, snap-fit ​​connection, rotation fit, etc. Therefore, the specific connection method between the shielding cover 500 and the cavity 100 is not limited in this embodiment.

[0034] In an optional embodiment, when the first driving member 430 is a pull rod, an avoidance hole is provided on the shielding cover 500. Exemplarily, the pull rod can be slidably matched or threadedly matched with the avoidance hole, so that the first driving member 430 can pass through the shielding cover 500 and move relative to the shielding cover 500. In this embodiment, the first driving member 430 can be operated outside the cavity 100 to provide sufficient operating space for operating the first driving member 430.

[0035] In one or more optional embodiments, the capacitance adjustment member 600 includes a capacitance adjustment core 610 and a second driving member 620, the second driving member 620 is connected to the capacitance adjustment core 610, and the second driving member 620 can drive the capacitance adjustment core 610 to move in the direction of entering or moving out of the gap between the liner 200 and the cavity 100. During the semiconductor process, the extension direction of the gap between the liner 200 and the cavity 100 can be a vertical direction. Exemplarily, the second driving member 620 can be used to drive the capacitance adjustment core 610 to rise and fall in the gap. Exemplarily, the second driving member 620 passes through the cavity 100 and is connected to the capacitance adjustment core 610.

[0036] In the above embodiment, the second driving member 620 drives the capacitance adjustment core 610 to move in or out of the first gap to adjust the capacitance to ground formed between the lining sub-component 210 and the cavity 100. In addition, in the above embodiment, the capacitance adjustment member 600 can ensure that each lining sub-component 210 is stationary relative to the cavity 100 during the process of adjusting the capacitance to ground formed between the lining sub-component 210 and the cavity 100, thereby helping to improve the stability of the installation of the lining sub-component 210.

[0037] In an optional embodiment, the capacitance adjustment core 610 may be a ceramic sheet. Exemplarily, the second driving member 620 drives the capacitance adjustment core 610 to move in the direction of entering the first gap, so that the capacitance of the corresponding ground capacitor C01 increases. The second driving member 620 drives the capacitance adjustment core 610 to move out of the first gap, so that the capacitance of the corresponding ground capacitor C01 decreases.

[0038] In an optional embodiment, the structure of the second driving member 620 may be the same as that of the first driving member 430 . Therefore, the specific structure of the second driving member 620 will not be further described in this embodiment.

[0039] In one or more optional embodiments, the lining 200 includes a plurality of lining sub-components 210 and a plurality of first isolating components 220, and a first isolating component 220 is disposed between each adjacent lining sub-component 210, so that each lining sub-component 210 is independent of each other, thereby realizing that the corresponding capacitance value and inductance value to ground of each lining sub-component 210 can be independently adjusted. There are multiple adjustable inductance devices 400 and capacitance adjustment components 600, and they are respectively disposed in one-to-one correspondence with the lining sub-components 210. Exemplarily, the adjustable inductance device 400 can be used to adjust the inductance to ground of the corresponding lining sub-component 210; the capacitance adjustment component 600 can be used to adjust the capacitance to ground of the corresponding lining sub-component 210.

[0040] In the above embodiment, the adjustable inductance device 400 and the capacitance adjustment member 600 are respectively arranged in one-to-one correspondence with the lining sub-components 210, so that the impedance of each lining sub-component 210 to the ground can be adjusted. The impedance between each lining sub-component 210 and the cavity 100 can affect the RF energy of the corresponding area of ​​each lining sub-component 210, and then affect the density distribution of the plasma and the energy of the plasma. Specifically, the greater the density of the plasma, the greater the etching selectivity; the greater the energy of the plasma, the greater the etching rate of the corresponding wafer. Furthermore, the lining sub-components 210 are distributed along the circumference of the lower electrode device 300, that is, each lining sub-component 210 is distributed in different directions of the lower electrode device 300, and thus the RF energy distribution in various directions of the lower electrode device 300 can be adjusted by adjusting the impedance between each lining sub-component 210 and the cavity 100, so that the plasma density and plasma energy in various directions of the lower electrode device 300 can be adjusted, that is, the plasma density and / or energy in various directions of the wafer can be adjusted by the adjustable inductance device 400 and the capacitance adjustment component 600.

[0041] Therefore, the process chamber described in the above embodiment can adjust the etching rate and etching selectivity of the wafer in all directions through the adjustable inductance device 400 and the capacitance adjustment component 600. In the semiconductor process, the process chamber can adjust the impedance between the liner sub-component 210 and the cavity 100 in the corresponding direction according to the etching rate and etching selectivity of the wafer in all directions, so that the etching rate and etching selectivity of the wafer in all directions are consistent. Therefore, the above implementation scheme can overcome the technical problem that the etching rate and etching selectivity of the wafer in all directions are easily inconsistent in the semiconductor process equipment in the related art during the etching process.

[0042] Reference Figure 3 and Figure 4 , a plurality of lining sub-components 210 and a plurality of first isolating components 220 can be spliced ​​to form an annular lining 200. Exemplarily, the number of lining sub-components 210 can be two, three, four or more. For this reason, the specific number of lining sub-components 210 is not limited in this embodiment.

[0043] In an optional embodiment, the material of the first isolating member 220 is an insulating material. Exemplarily, the material of the first isolating member 220 may be ceramic. There are many types of insulating materials. Therefore, this embodiment does not limit the specific material of the first isolating member 220.

[0044] It should be noted that the one-to-one correspondence between the adjustable inductance device 400 and the lining sub-component 210 should be understood as that each lining sub-component 210 is provided with at least one adjustable inductance device 400, so that the inductance to ground of each lining sub-component 210 can be adjusted by the corresponding adjustable inductance device 400. Exemplarily, one lining sub-component 210 can be provided with one or more adjustable inductance devices 400. Exemplarily, each lining sub-component 210 can be electrically connected to the cavity 100 through one or more adjustable inductance devices 400. For this reason, this embodiment does not limit the number of adjustable inductance devices 400 provided for each lining sub-component 210.

[0045] Similarly, the one-to-one correspondence between the capacitor adjustment component 600 and the lining sub-component 210 should be understood as that each lining sub-component 210 is provided with at least one capacitor adjustment component 600, so that the inductance to ground of each lining sub-component 210 can be adjusted by the corresponding capacitor adjustment component 600. Exemplarily, one lining sub-component 210 can be provided with one or more capacitor adjustment components 600. In this embodiment, the capacitance value of the capacitor structure formed by each lining sub-component 210 and the cavity 100 can be adjusted by one or more capacitor adjustment components 600. For this reason, this embodiment does not limit the number of capacitor adjustment components 600 provided for each lining sub-component 210.

[0046] It should be noted that the impedance between each lining sub-component 210 and the cavity 100 can affect the RF energy in the corresponding area, and further affect the density distribution of the plasma and the energy of the plasma. Specifically, the greater the density of the plasma, the greater the etching selectivity; the greater the energy of the plasma, the greater the etching rate of the corresponding wafer. Furthermore, the lining sub-components 210 are distributed along the circumference of the lower electrode device 300, that is, each lining sub-component 210 is distributed in different directions of the lower electrode device 300, and then the RF energy distribution in each direction of the lower electrode device 300 can be adjusted by adjusting the impedance between each lining sub-component 210 and the cavity 100, so that the density of the plasma and the energy of the plasma in each direction of the lower electrode device 300 can be adjusted, that is, the density and / or energy of the plasma in each direction of the wafer can be adjusted by the adjustable inductance device 400 and the capacitance adjustment component 600.

[0047] Therefore, the process chamber described in the above embodiment can realize the energy size and density distribution of the plasma in the corresponding areas of each direction of the wafer through the adjustable inductance device 400 and the capacitance adjustment device 600, and then adjust the etching rate and etching selectivity in each direction of the wafer, so as to overcome the technical problem of inconsistent etching rates in each direction of the wafer in the semiconductor process equipment in the related technology during the etching process.

[0048] In the related art, when the process chamber is performing an etching process on the wafer, the process gas in the chamber will generate plasma under the action of radio frequency power. The plasma generated in the process chamber is located above the electrostatic chuck. The wafer is placed on the upper surface of the electrostatic chuck. During the etching process, since the mobility of electrons between the wafer and the plasma is much greater than the mobility of ions, a plasma sheath structure will be formed between the electrostatic chuck and the plasma, between the focusing ring and the plasma, and between the liner and the plasma. In addition, a potential difference will be formed between the upper interface and the lower interface of the plasma sheath.

[0049] Each lining sub-component 210 is independent from each other, so that the plasma sheath formed between each lining sub-component 210 and the plasma is independent from each other. Figure 5, the plasma sheath capacitance formed between each lining sub-component 210 and the plasma is C06. The plasma sheaths formed between each lining sub-component 210 and the plasma are independent of each other, that is, the plasma sheath capacitances C06 formed between each lining sub-component 210 and the plasma are connected in parallel with each other. In addition, each lining sub-component 210 can form independent capacitance to ground with the cavity 100. And each lining sub-component 210 is grounded through an independent adjustable inductance device 400. In an optional embodiment, the cavity 100 is grounded. That is, the capacitance to ground formed by each lining sub-component 210 and the cavity 100 is connected in parallel with the adjustable inductance device 400 corresponding to the lining sub-component 210. The capacitance adjustment component 600 corresponds one-to-one to the lining sub-component 210, and the adjustable inductance device 400 corresponds one-to-one to the lining sub-component 210, so the impedance between each lining sub-component 210 and the ground terminal can be adjusted by adjusting the capacitance value and inductance value to the ground of each lining sub-component 210 respectively.

[0050] Therefore, the process chamber described in the above embodiments can adjust the energy and density distribution of the plasma in the corresponding area of ​​each liner sub-component 210 through the capacitance adjustment component 600 and / or the adjustable inductance device 400.

[0051] Reference Figures 1 to 4 , the shape of the lining sub-components 210 is set to be an arc shape. Exemplarily, a plurality of lining sub-components 210 and a plurality of first isolation components 220 are spliced ​​to form an annular lining 200. In an optional embodiment, the sizes of the central angles of the lining sub-components 210 are all equal, so that the sizes of the adjustment areas corresponding to the lining sub-components 210 are consistent, which is beneficial to improve the consistency of the etching rate adjustment range in all directions of the wafer. In actual production activities, users can set the size of the central angle corresponding to the lining sub-component 210 as needed. Exemplarily, when a higher accuracy of adjusting the etching rate in all directions of the wafer is required, the number of lining sub-components 210 can be increased and the central angle corresponding to the lining sub-component 210 can be reduced. It should be noted that the central angle of the lining sub-component 210 described in this embodiment refers to the central angle corresponding to the arc segment where the arc-shaped lining sub-component 210 is located.

[0052] In one or more optional embodiments, the first isolating member 220 is adapted to the shape of the lining sub-member 210, and each lining sub-member 210 includes a first ring body 211, a second ring body 212, and a connecting portion 213. The first ring body 211 and the second ring body 212 are connected to both sides of the connecting portion 213 and extend upward. The first ring body 211 is arranged opposite to the cavity 100, the second ring body 212 is arranged close to the lower electrode device 300, and the connecting portion 213 is connected to the adjustable inductance device 400. Exemplarily, the connecting portion 213 is arc-shaped, the first ring body 211 and the second ring body 212 are overlapped along the radial direction of the connecting portion 213, and the second ring body 212 is connected to the edge of the inner ring side of the connecting portion 213, and the first ring body 211 is connected to the edge of the outer ring side of the connecting portion 213.

[0053] In one or more optional embodiments, the first insulating member 220 includes an inner insulating member 221, a bottom insulating member 222, and an outer insulating member 223. The inner insulating member 221 is disposed between the second ring bodies 212 of two adjacent lining members 210. The bottom insulating member 222 is located between the connecting portions 213 of two adjacent lining members 210. The outer insulating member 223 is located between the first ring bodies 211 of two adjacent lining members 210. Exemplarily, the inner insulating member 221, the bottom insulating member 222, and the outer insulating member 223 can be disposed separately to prevent the first insulating member 220 from being ruptured by heat.

[0054] In one or more optional embodiments, the lining sub-component 210 and the first isolating member 220 may be disposed on the lower electrode device 300 and / or the cavity 100. Exemplarily, when the lining sub-component 210 is disposed on the cavity 100, the lining sub-component 210 may be positioned on the cavity 100 through an insulating connector. This embodiment can avoid the lining sub-component 210 being directly electrically connected to the cavity 100 to avoid short circuiting of both ends of the adjustable inductor device 400.

[0055] In another optional embodiment, the first isolating member 220 is fixedly connected to the adjacent lining sub-member 210, and one end of the first isolating member 220 close to the bottom of the cavity 100 protrudes out of one end of the lining sub-member 210 close to the bottom of the cavity 100, so that the lining 200 can be supported on the cavity 100 by the first isolating member 220. In this embodiment, the first isolating member 220 can not only be used to separate two adjacent lining sub-members 210 so that each lining sub-member 210 is independent of each other, but also can provide an installation base for each lining sub-member 210 to prevent each lining sub-member 210 from contacting and conducting with the cavity 100.

[0056] Reference Figure 1 and Figure 2The process chamber further includes a second isolating member 700, which is disposed between the liner sub-member 210 and the cavity 100, and the liner sub-member 210 is supported on the cavity 100 by the second isolating member 700. Exemplarily, the second isolating member 700 is disposed on the bottom wall 120 of the cavity 100 and between the bottom wall 120 and the liner 200, and is used to support the liner 200. In this embodiment, the second isolating member 700 can provide a mounting base for the liner sub-member 210. Further, the material of the second isolating member 700 is an insulating material. Exemplarily, the material of the second isolating member 700 is ceramic.

[0057] In an optional embodiment, the second isolating member 700 may be provided in an annular shape, so that the liner sub-member 210 in the liner 200 and the cavity 100 may be spaced apart by the second isolating member 700. In an optional embodiment, the second isolating member 700 may be connected to the first isolating member 220. Exemplarily, the second isolating member 700 may be provided as an integral structure with the first isolating member 220. Of course, the second isolating member 700 may also be provided separately from the first isolating member 220.

[0058] Reference Figure 1 and Figure 2 The cavity 100 includes a side wall 110 and a bottom wall 120. Optionally, the side wall 110 is cylindrical in shape. The bottom wall 120 is disposed at one end of the side wall 110 to provide a mounting base for the liner 200, the lower electrode device 300, the adjustable inductance device 400 and / or the capacitance adjustment member 600 through the bottom wall 120. Exemplarily, the side wall 110 may be connected to a preset reference voltage terminal. Further, the liner sub-components 210 are electrically connected to the side wall 110 through the adjustable inductance device 400.

[0059] In an optional embodiment, a first opening is formed between the assembly surfaces of the side wall 110 and the bottom wall 120. Further optionally, the shielding cover 500 is detachably connected to the side wall 110 and the bottom wall 120. In this embodiment, the shielding cover 500 is easy to disassemble.

[0060] Reference Figures 1 to 4 In an optional embodiment, a first arc-shaped gap is formed between the side of the second ring body 212 of the lining sub-component 210 close to the inner wall of the cavity 100 and the inner wall of the cavity 100. Exemplarily, the shape of the capacitance adjustment core 610 can be set to a circular arc. Further, the capacitance adjustment core 610 can be slidably matched with the cavity 100 and / or the lining sub-component 210 so that the capacitance adjustment core 610 slides along the first gap. Of course, the thickness of the capacitance adjustment core 610 can be less than the width of the first gap, so that the capacitance adjustment core 610 can form a gap with the inner wall of the lining sub-component 210 and the cavity 100 respectively, so as to avoid the friction between the capacitance adjustment core 610 and the lining sub-component 210 or the cavity 100 to produce particles that contaminate the process chamber.

[0061] Reference Figure 3 and Figure 4 In an optional embodiment, at least a portion of the first isolating member 220 protrudes from a side of the second ring body 212 close to the inner wall of the cavity 100. In this embodiment, the first isolating member 220 can not only separate the capacitance adjustment cores 610 corresponding to two adjacent lining sub-members 210, but also provide a guide for the capacitance adjustment core 610 to slide along the first gap.

[0062] In one or more optional embodiments, the lower electrode device 300 includes a lower electrode assembly 310 for carrying a wafer, an isolation ring 320, a focus ring 330, and a third driving member 340. Exemplarily, the lower electrode assembly 310 has a bearing surface, and the bearing surface is used to support the wafer. The isolation ring 320 is arranged around the outer side of the lower electrode assembly 310 and is located between the lower electrode assembly 310 and the liner 200. The focusing ring 330 is stacked on the isolation ring 320 and the two are coaxially arranged. The isolation ring 320 is connected to the third driving member 340, and the third driving member 340 drives the isolation ring 320 to move along the thickness direction of the lower electrode assembly 310 to adjust the relative height of the focusing ring 330 and the bearing surface of the lower electrode assembly 310. Exemplarily, the thickness direction of the lower electrode assembly 310 can be a vertical direction or an axial direction corresponding to the lower electrode assembly 310.

[0063] It should be noted that the relative height between the focus ring 330 and the bearing surface of the lower electrode assembly 310 described in the present application refers to: the relative height between the upper surface of the focus ring 330 and the bearing surface of the lower electrode assembly 310. Exemplarily, the bearing surface of the lower electrode assembly 310 is the upper surface of the lower electrode assembly 310. The process zone chamber described in the above embodiment can drive the isolation ring 320 to move along the thickness direction of the lower electrode assembly 310 through the third driving member 340, adjust the relative height between the focus ring 330 and the bearing surface of the lower electrode assembly 310, and then adjust the regional etching rate of the wafer edge, so that the regional etching rate of the circular edge is consistent with the etching rate of the central area of ​​the wafer.

[0064] For example, Figure 6 The schematic diagram shows the radial electric field strength of the wafer when the focus ring 330 is at different heights. Where: E is the electric field strength, and h is the relative height of the focusing ring 330 and the bearing surface of the lower electrode assembly 310. Specifically, the smaller the relative height h of the focusing ring 330 and the bearing surface of the lower electrode assembly 310 is, the greater the electric field strength E at the edge of the wafer, and the greater the etching rate at the edge of the corresponding wafer. For further reference Figure 7 , when the upper surface of the focus ring 330 is 4 mm higher than the bearing surface of the lower electrode assembly 310, that is, h = 4 mm, the electric field strength at the edge of the wafer surface is weaker than the electric field strength at the center of the wafer. Figure 8When the upper surface of the focus ring 330 is 4 mm lower than the bearing surface of the lower electrode assembly 310, that is, h=-4 mm, the electric field strength at the edge of the wafer surface is stronger than the electric field strength at the center of the wafer. Therefore, the above embodiment can adjust the electric field strength corresponding to the edge area of ​​the wafer by adjusting the relative height between the focus ring 330 and the bearing surface of the lower electrode assembly 310, thereby achieving the purpose of adjusting the etching rate of the edge area of ​​the wafer.

[0065] Reference Figure 3 , the focus ring 330 includes a plurality of focus ring sub-components 331, and the isolation ring 320 includes a plurality of isolation ring sub-components, and the focus ring sub-components 331 correspond to the isolation ring sub-components one by one. Exemplarily, a plurality of first isolation components 220 are arranged between the lower electrode assembly 310 and the liner 200 along the circumferential direction of the lower electrode assembly 310. The focus ring sub-component 331 is stacked on one end of the first isolation sub-component along the first direction. The first direction is perpendicular to the bearing surface. Exemplarily, the first direction is the thickness direction of the lower electrode assembly 310.

[0066] Optionally, there are multiple third driving members 340 , which correspond one-to-one to the focus ring sub-members 331 , and the third driving members 340 are used to drive the corresponding focus ring sub-members 331 to move along the thickness direction of the lower electrode assembly 310 .

[0067] Combination Figure 6 and Figure 7 The change in the height of the focusing ring sub-component 331 protruding from the bearing surface affects the electric field strength of the edge area of ​​the wafer corresponding to the focusing ring sub-component 331. Fig. 9 , the height of the focusing ring sub-component 331 gradually changes from one side of the wafer to the other side along the circumferential direction of the wafer. Therefore, it can be directly obtained that the height of the focusing ring sub-component 331 has a greater impact on the electric field of the edge area of ​​the wafer, and has a smaller impact on the electric field of the non-edge area. Figure 3 The farther the edge of the lower electrode device 300 in the focus ring 330 is from the X-axis direction, the higher the height of the corresponding focus ring sub-component 331 is. Fig. 9 , it can be obtained that the greater the height value of the focusing ring sub-component 331, the weaker the electric field strength in the edge area of ​​the wafer corresponding to the focusing ring sub-component 331. The smaller the height value of the focusing ring sub-component 331, the stronger the electric field strength in the edge area of ​​the wafer corresponding to the focusing ring sub-component 331. The smaller the electric field strength at the edge of the wafer, the slower the etching rate of the edge part of the wafer. The stronger the electric field strength at the edge of the wafer, the faster the etching rate of the edge part of the wafer.

[0068] Therefore, the process chamber described in the above embodiment can adjust the electric field strength at the edge of the wafer by changing the height of each focusing ring component 331 protruding from the supporting surface, thereby affecting the ion energy of the plasma in the corresponding area of ​​the edge of the wafer, so as to optimize the etching rate of the edge of the wafer and improve the consistency of the etching rate of each part of the wafer.

[0069] Furthermore, in the above embodiment, the focus ring 330 includes a plurality of independent focus ring sub-components 331, and the height of each focus ring sub-component 331 protruding from the bearing surface can be adjusted separately. Under the influence of factors such as the airflow field, temperature field, and geomagnetic field in the process chamber, if the wafer etching has an eccentricity problem, that is, the etching rates in various directions of the wafer are not equal, the etching rate of the edge portion of the wafer corresponding to the focus ring sub-component 331 can be adjusted by adjusting the height of the focus ring sub-component 331 relative to the bearing surface of the lower electrode assembly 310, so that the etching rate of the edge portion of the wafer can be consistent with the etching rate of the center portion of the wafer, thereby improving the consistency of the etching rates of various portions of the wafer.

[0070] In an optional embodiment, the third driving member 340 may be a jack. Of course, the structure of the third driving member 340 may also be the same as that of the first driving member 430 or the second driving member 620. Therefore, the specific type of the third driving member 340 is not limited in this embodiment.

[0071] The number of the focusing ring components 331 may also be 2, 3, 4 or more than 4. Therefore, the specific number of the focusing ring components 331 is not limited in this embodiment.

[0072] Although the more the number of focusing ring components 331 is, the higher the adjustment accuracy of the etching rate at the edge of the wafer is. However, the more the number of focusing ring components 331 is, the more complexity of the process chamber will increase, and the manufacturing difficulty and manufacturing cost of the process chamber will increase. In an optional embodiment, the number of focusing ring components 331 is 8, which can not only avoid the low adjustment accuracy of the etching rate at the edge of the wafer, but also avoid the structure of the process chamber being too complicated.

[0073] Reference Figure 3 In an optional embodiment, the focus ring sub-component 331 is in an arc shape, and the center angles of the focus ring sub-component 331 are all equal. The above embodiment can ensure that the adjustment accuracy of the etching rate of the corresponding areas in each direction of the wafer is consistent, which is beneficial to improve the consistency of the etching rate of each part of the wafer.

[0074] In an optional embodiment, the first isolation sub-component is in the shape of an arc, and the size of the central angle of the first isolation sub-component is equal to the size of the central angle of the corresponding focusing ring sub-component 331.

[0075] The above embodiment can improve the consistency of the structure of the lower electrode device 300 in various directions of the wafer, and can effectively avoid the uneven distribution of the first isolation sub-component in the circumferential direction of the wafer affecting the wafer and causing inconsistent etching rates in various directions of the wafer.

[0076] In one or more optional embodiments, the lower electrode assembly 310 includes a chuck base 311, a chuck 312, an RF feedthrough 313 and a third isolation member 314. Exemplarily, the chuck base 311 is a basic structural member that can provide a mounting base for the chuck 312, the RF feedthrough 313 and / or the third isolation member 314. Optionally, the chuck base 311 is made of aluminum. Figure 1 and Figure 2 The chuck base 311 includes a horizontal mounting portion and a vertical mounting portion. The horizontal mounting portion is arranged on the bottom wall 120 of the cavity 100, the chuck 312 and the third isolation member 314 are stacked on the horizontal mounting portion from top to bottom, the vertical mounting portion is sleeved on the outer periphery of the RF feed 313, and is coaxially arranged with the RF feed 313, one end of the RF feed 313 is connected to the chuck 312, and the other end is connected to the lower RF source, wherein the chuck 312 has a bearing surface for bearing a wafer.

[0077] Exemplarily, the material of the third isolating member 314 is an insulating material. There are many types of insulating materials, and for this reason, this embodiment does not limit the specific type of insulating material. Optionally, the material of the third isolating member 314 is ceramic, which improves the insulation performance of the third isolating member 314 while increasing the corrosion resistance of the third isolating member 314.

[0078] Exemplarily, the first end of the RF feedthrough 313 is connected to the chuck 312, and the second end of the RF feedthrough 313 is connected to the second matcher 900, so that the RF power of the second RF power source can reach the lower electrode assembly 310 along the RF feedthrough 313. Figure 5 , the stray capacitance between the chuck 312 and the chuck base 311 is C07. Exemplarily, the chuck base 311 is connected to the ground terminal.

[0079] Based on the process chamber described in the present invention, an embodiment of the present invention further discloses a semiconductor process equipment, which includes the process chamber described in any one embodiment of the present invention specification.

[0080] Exemplarily, the semiconductor process equipment further includes a first RF power source, a second RF power source, a first matcher 800, a second matcher 900, and a RF coil 1000. The RF coil 1000 is arranged opposite to the lower electrode device 300. The first RF power source is connected to the RF coil 1000 through the first matcher 800. The second RF power source is connected to the lower electrode device 300 through the second matcher 900.

[0081] During the semiconductor process, the RF power generated by the first RF power source is transmitted to the RF coil 1000 through the first matcher 800 and reaches the process chamber to excite the low-pressure process gas to generate plasma. The RF power generated by the second RF power source is transmitted to the lower electrode device 300 through the second matcher 900.

[0082] In one or more optional embodiments, the frequency of the first RF power source is a first frequency, the frequency of the second RF power source is a second frequency, and the first frequency is greater than or less than the second frequency. Further preferably, the first frequency is greater than the second frequency.

[0083] In the above embodiment, the first frequency and the second frequency are not equal, so that the impedance of the capacitance to ground and the inductance to ground between each liner sub-component 210 to the first RF power supply and the impedance to the second power supply are different. Then, the impedance of each liner sub-component 210 to the first RF power supply and the second RF power supply can be adjusted by adjusting the inductance of the adjustable inductance device 400 and / or the capacitance of the capacitance to ground C01 formed between the liner 200 and the chamber 100. Exemplarily, the smaller the impedance value of the liner sub-component 210 to the first RF power supply, the greater the induced current of the first RF power supply, so that the dissociation of the process gas in the area corresponding to the liner sub-component 210 in the process chamber is more complete, thereby increasing the plasma concentration in the corresponding area. The smaller the impedance value of the liner sub-component 210 to the second RF power supply, the greater the bias voltage on the wafer, so that the electric field strength in the process chamber along the direction of the liner sub-component 210 is greater, thereby increasing the energy of the plasma in this direction.

[0084] Reference Figure 5 The liner 200 includes a plurality of liner sub-components 210 and a plurality of first isolating members 220, and a first isolating member 220 is disposed between two adjacent liner sub-components 210. There are a plurality of adjustable inductance devices 400 and capacitance adjustment members 600, and they are disposed one by one corresponding to the liner sub-components 210. Exemplarily, the resistance value of the plasma in the corresponding area of ​​each liner sub-component 210 is R01. The adjustable inductance device 400 is L400.

[0085] For example: the frequency of the first RF power source is f 1 , the frequency of the second RF power source is f 2 The inductance corresponding to the adjustable inductor device 400 is L, and the admittance of the adjustable inductor device 400 to the first RF power source is Y L :

[0086]

[0087] The capacitance of the ground capacitor C01 is C. The admittance of the ground capacitor C01 to the first RF power source is Y C :

[0088] Y C =j(2πf 1 C)

[0089] The admittance of each lining sub-component 210 to the first RF power source is Y 1Therefore, each lining sub-component 210 and the admittance Y of the first RF power source 1 The calculation formula is as follows:

[0090]

[0091] Similarly, the admittance of each lining sub-component 210 to the second RF power source is Y 2 Specifically, the calculation formula of the admittance of each lining sub-component 210 to the first RF power source is as follows:

[0092]

[0093] It should be noted that in the above formula, j is an imaginary unit, that is, j 2 = -1. Each lining sub-component 210 is connected to the first RF power source f 1 The admittance Y 1 It mainly affects the density of ions in the corresponding direction of the wafer. Specifically, the density of plasma mainly affects the selectivity during wafer etching. Selectivity refers to how much faster one material etches than another material under the same etching conditions. The selectivity of a wafer is defined as the ratio of the etching rate of the etched material to the etching rate of another material. A high selectivity is beneficial for reducing the thickness of the photoresist.

[0094] Each lining sub-component 210 is connected to the second RF power source f 2 The admittance Y 2 It mainly affects the energy of the ions in the corresponding direction of the wafer. For example, the greater the energy of the plasma, the faster the corresponding etching rate.

[0095] Further combined with the calculation formula of the admittance of the lining sub-component 210 to the first RF power source and the second RF power source, the result can be obtained directly and without doubt. If the inductance corresponding to the adjustable inductor device 400 is adjusted alone or the capacitance of the ground capacitor C01 is adjusted alone, Y 1 and Y 2 Change at the same time.

[0096] In the above embodiment, the frequency of the first RF power source is not equal to the frequency of the second RF power source, and thus, 1 Adjust Y without changing 2 The size of Y 2 Adjust Y without changing 1 size.

[0097] For example, when the frequency of the first RF power source is greater than the frequency of the second RF power source, if the etching rate in a certain direction of the wafer needs to be increased, it is necessary to ensure that the impedance of the lining sub-component 210 in this direction to the first RF power source remains unchanged, that is, to ensure that the admittance of the lining sub-component 210 to the first RF power source remains unchanged, that is, Y1 The corresponding value remains unchanged. Therefore, the relationship between the inductance L and the capacitance C to ground corresponding to the adjustable inductor device 400 after adjustment can be obtained as follows:

[0098]

[0099] Therefore, Y 1 The corresponding value is a pure imaginary number, so -Y 1 is a real number.

[0100] Furthermore, the admittance of the lining sub-component 210 to the second RF power source is obtained:

[0101]

[0102] Furthermore, the inductance adjusting core 420 can be moved upward to increase the inductance of the adjustable inductance device 400, and the capacitance adjusting core 610 can be moved downward to make the capacitance value of the ground capacitance C01 of the lining sub-component 210 reach:

[0103]

[0104] The process chamber in the above embodiment can adjust the etching rate in all directions of the wafer without changing the selectivity of the wafer by cooperatively adjusting the capacitance of the ground capacitor C01 and the inductance of the adjustable inductor device 400 .

[0105] Similarly, the process chamber described in the above embodiment can also achieve a constant etching rate in all directions of the wafer and improve the selectivity in all directions of the wafer by cooperatively adjusting the capacitance of the ground capacitor C01 and the inductance of the adjustable inductor device 400.

[0106] Therefore, the process chamber described in the above embodiment can adjust the single parameter of the etching rate and selectivity in all directions of the wafer by cooperatively adjusting the capacitance of the ground capacitor C01 and the inductance of the adjustable inductor device 400 .

[0107] Illustratively, when the frequency of the first RF power source is greater than the frequency of the second RF power source, an adjustment table of etching parameters in various directions of the wafer in the process chamber described in the above embodiment can be obtained, as shown in Table 1.

[0108] Table 1 Adjustment table of etching parameters in various directions of wafer (f 1 >f 2 ):

[0109]

[0110] Reference Figure 1 and Figure 2In an optional embodiment, the process chamber of the present invention further includes a dielectric window 1100. Exemplarily, the dielectric window 1100 is arranged opposite to the lower electrode device 300. Further, the RF coil 1000 is arranged on the dielectric window 1100. Optionally, the RF coil 1000 is arranged on the side of the dielectric window 1100 away from the lower electrode device 300, so as to make the magnetic field distribution in the process chamber more uniform through the dielectric window 1100, thereby facilitating the uniform distribution of plasma and improving the consistency of the etching rate in each direction of wafer etching.

[0111] Exemplarily, the first RF power source f 1 The upper radio frequency is the second radio frequency power source f2, and the lower radio frequency is the second radio frequency power source f3. Generally, in the semiconductor manufacturing process, the upper radio frequency of the process chamber is greater than the lower radio frequency.

[0112] The above embodiments of the present invention focus on the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here.

[0113] The above description is only an embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent substitution, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.

Claims

1. A process chamber, applied to semiconductor equipment, characterized in that: The invention comprises a grounded cavity (100) and an inner lining (200) arranged in the cavity (100), a lower electrode device (300), an adjustable inductance device (400) and a capacitance adjustment member (600); the inner lining (200) is arranged around the outer side of the lower electrode device (300), a gap is provided between the inner lining (200) and the inner wall of the cavity (100), and the capacitance adjustment member (600) is arranged in the gap in a liftable manner to adjust the capacitance value of the inner lining (200) to the ground; one end of the adjustable inductance device (400) is connected to the inner lining (200), and the other end is grounded to adjust the inductance value of the inner lining (200) to the ground.

2. The process chamber according to claim 1, characterized in that: The adjustable inductance device (400) comprises an inductance coil (410), an inductance adjustment core (420) and a first driving member (430); one end of the inductance coil (410) is connected to the lining (200), and the other end is connected to the cavity (100); the first driving member (430) is connected to the inductance adjustment core (420) and is used to drive the inductance adjustment core (420) to move in the direction of inserting or removing the inductance coil (410).

3. The process chamber according to claim 2, characterized in that: The process chamber further comprises a shielding cover (500), the cavity (100) is provided with a first opening, the first opening is opposite to the inductor device (400), the shielding cover (500) is detachably connected to the cavity (100), and the shielding cover (500) covers the first opening.

4. The process chamber according to claim 1, characterized in that: The capacitance adjustment member (600) comprises a capacitance adjustment core (610) and a second driving member (620), wherein the second driving member (620) passes through the cavity (100) and is connected to the capacitance adjustment core (610), and is used for driving the capacitance adjustment core (610) to rise and fall in the gap.

5. The process chamber according to claim 1, characterized in that: The lining (200) comprises a plurality of lining sub-components (210) and a plurality of first isolating components (220), wherein one first isolating component (220) is disposed between each of two adjacent lining sub-components (210); the adjustable inductance device (400) and the capacitance adjusting component (600) are both in plurality and are disposed in one-to-one correspondence with the lining sub-components (210), respectively.

6. The process chamber according to claim 5, characterized in that: The first isolating member (220) is adapted to the shape of the lining sub-member (210), and each of the lining sub-members (210) comprises a first ring body (211), a second ring body (212) and a connecting portion (213), wherein the first ring body (211) and the second ring body (212) are connected to both sides of the connecting portion (213) and extend upward, the first ring body (211) is arranged opposite to the cavity (100), the second ring body (212) is arranged close to the lower electrode device (300), and the connecting portion (213) is connected to the adjustable inductance device (400).

7. The process chamber according to claim 1, characterized in that: The process chamber further comprises a second isolation member (700), which is disposed on the bottom wall (120) of the cavity (100) and is located between the bottom wall (120) and the liner (200) for supporting the liner (200).

8. The process chamber according to any one of claims 1 to 7, characterized in that: The lower electrode device (300) comprises a lower electrode assembly (310) for carrying a wafer, an isolation ring (320), a focus ring (330) and a third driving member (340), wherein: The isolation ring (320) is arranged around the outside of the lower electrode assembly (310) and is located between the lower electrode assembly (310) and the lining (200); the focusing ring (330) is stacked on the isolation ring (320) and the two are coaxially arranged; the isolation ring (320) is connected to the third driving member (340); the third driving member (340) drives the isolation ring (320) to move along the thickness direction of the lower electrode assembly (310) to adjust the relative height between the focusing ring (330) and the bearing surface of the lower electrode assembly (310).

9. The process chamber according to claim 8, characterized in that: The focusing ring (330) includes a plurality of focusing ring sub-components (331), and the isolation ring (320) includes a plurality of isolation ring sub-components, and the focusing ring sub-components (331) correspond one-to-one with the isolation ring sub-components; the third driving components (340) are multiple and correspond one-to-one with the focusing ring sub-components (331), and the third driving components (340) are used to respectively drive the corresponding focusing ring sub-components (331) to move along the thickness direction of the lower electrode assembly (310).

10. The process chamber according to claim 8, characterized in that: The lower electrode assembly (310) comprises a chuck base (311), a chuck (312), a radio frequency feedthrough (313) and a third isolating member (314); the chuck base (311) comprises a horizontal mounting portion and a vertical mounting portion; the horizontal mounting portion is arranged on the bottom wall (120) of the cavity (100); the chuck (312) and the third isolating member (314) are stacked on the horizontal mounting portion from top to bottom; the vertical mounting portion is sleeved on the outer periphery of the radio frequency feedthrough (313) and is coaxially arranged with the radio frequency feedthrough (313); one end of the radio frequency feedthrough (313) is connected to the chuck (312), and the other end is connected to a lower radio frequency source; wherein the chuck (312) has the bearing surface for bearing the wafer.

11. A semiconductor process equipment, characterized in that: The semiconductor process equipment comprises a first radio frequency power supply, a second radio frequency power supply, a first matcher (800), a second matcher (900) and a radio frequency coil (1000), and a process chamber according to any one of claims 1 to 10, wherein the radio frequency coil (1000) is arranged opposite to the lower electrode device (300), the first radio frequency power supply is connected to the radio frequency coil (1000) through the first matcher (800), and the second radio frequency power supply is connected to the lower electrode device (300) through the second matcher (900).

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