Organic device, mask set, mask, and method for manufacturing an organic device

Abstract

The present application provides an organic device, a mask set, a mask, and a method for manufacturing an organic device. The organic device can include a substrate, a first electrode on the substrate, an organic layer on the first electrode, and a second electrode on the organic layer. In a case where the substrate is observed in a direction of a normal line of the substrate, the organic device can include a first display region including the second electrode having a first occupancy ratio, and a second display region including the second electrode having a second occupancy ratio smaller than the first occupancy ratio. In the second display region, the organic layer can be arranged in a first direction and arranged in a second direction intersecting the first direction. In the second display region, the second electrode can include electrode lines arranged in the first direction. The electrode lines can include electrode segments arranged in the second direction and overlapping the organic layer. Two electrode segments adjacent in the second direction can be connected to each other. The electrode segments can include a first electrode segment having a first shape, and a second electrode segment having a second shape different from the first shape.

Description

TECHNICAL FIELD

[0001] Embodiments of the present disclosure relate to an organic device, a mask set, a mask, and a method for manufacturing an organic device. BACKGROUND

[0002] In recent years, in electronic devices such as smartphones or tablet computers, the market is demanding high-fineness display devices. The display device has, for example, a pixel density of 400 ppi or more or 800 ppi or more.

[0003] An organic EL display device is attracting attention because of good responsiveness and / or low power consumption. As a method of forming a pixel of an organic EL display device, a method of attaching a material constituting a pixel to a substrate by evaporation is known. For example, first, a substrate on which an anode is formed in a pattern corresponding to an element is prepared. Next, an organic material is attached to the anode via a through-hole of a mask, whereby an organic layer is formed on the anode. Next, a conductive material is attached to the organic layer via a through-hole of the mask, whereby a cathode is formed on the organic layer.

[0004] Patent Document 1: Japanese Patent No. 3539597

[0005] The larger the area of the cathode, the lower the resistance of the cathode. On the other hand, the larger the area of the cathode, the lower the transmittance of light in the organic device. SUMMARY

[0006] An organic device of one embodiment of the present disclosure can include a substrate, a first electrode over the substrate, an organic layer over the first electrode, and a second electrode over the organic layer. The organic device can include a first display region including the second electrode having a first area ratio and a second display region including the second electrode having a second area ratio smaller than the first area ratio, when viewed in a direction perpendicular to the substrate. The organic layer can be arranged in a first direction and arranged in a second direction intersecting the first direction in the second display region. The second electrode can include electrode lines arranged in the first direction in the second display region. The electrode lines can include electrode segments arranged in the second direction and overlapping with the organic layer. Two electrode segments adjacent to each other in the second direction can be connected to each other. The electrode segments can include a first electrode segment having a first shape and a second electrode segment having a second shape different from the first shape.

[0007] According to one embodiment of the present disclosure, the transmittance of light in an organic device can be improved. BRIEF DESCRIPTION OF DRAWINGS

[0008] Figure 1is a plan view showing an example of an organic device of one embodiment of the present disclosure.

[0009] Figure 2 is a plan view showing a second display region of the organic device.

[0010] Figure 3 is a plan view showing a second electrode of the second display region.

[0011] Figure 4 is a plan view showing an example of a first electrode segment of the second electrode.

[0012] Figure 5 is a plan view showing an example of a second electrode segment of the second electrode.

[0013] Figure 6 is a plan view showing a region surrounded by a double-dotted line indicated by reference numeral VI in the organic device of Figure 3

[0014] Figure 7 is a plan view showing a state where the second electrode is removed from the organic device of Figure 6

[0015] Figure 8 is a cross-sectional view taken along line A-A of the organic device of Figure 6

[0016] Figure 9 is a cross-sectional view taken along line B-B of the organic device of Figure 6

[0017] Figure 10 is a diagram showing an example of an evaporation apparatus provided with a mask apparatus.

[0018] Figure 11 is a plan view showing an example of a mask apparatus.

[0019] Figure 12 is a plan view showing a mask of the mask apparatus.

[0020] Figure 13 is a diagram showing a first mask apparatus, a second mask apparatus, and a third mask apparatus.

[0021] Figure 14 is a diagram showing an example of a cross-sectional structure of a mask.

[0022] Figure 15 is a plan view showing an example of a first mask.

[0023] Figure 16 is a plan view showing an example of a first mask.

[0024] Figure 17 ​​​​is a plan view showing an example of the 2nd mask.

[0025] Figure 18 is a plan view showing an example of the 3rd mask.

[0026] Figure 19 is a plan view showing an example of the mask stack.

[0027] Figure 20 is a plan view showing an example of the 1st through section of the mask stack.

[0028] Figure 21 is a plan view showing an example of the 2nd through section of the mask stack.

[0029] Figure 22 is a plan view showing an example of the 2nd display region of the reference method.

[0030] Figure 23 is a plan view showing an example of the 1st electrode section.

[0031] Figure 24 is a plan view showing an example of the 2nd electrode section.

[0032] Figure 25 is a plan view showing an example of the 1st through section.

[0033] Figure 26 is a plan view showing an example of the 2nd through section.

[0034] Figure 27 is a plan view showing an example of the 2nd electrode of the 2nd display region.

[0035] Figure 28 is a plan view showing an example of the 1st mask.

[0036] Figure 29 is a plan view showing an example of the 2nd mask.

[0037] Figure 30 is a plan view showing an example of the 1st mask.

[0038] Figure 31 is a plan view showing an example of the 2nd mask.

[0039] Figure 32 is a plan view showing an example of the 1st mask.

[0040] Figure 33 is a plan view showing an example of the 2nd mask.

[0041] Figure 34 is a plan view showing an example of the 1st mask.

[0042] Figure 35 is a plan view showing an example of the second mask.

[0043] Figure 36 is a plan view showing an example of the third mask.

[0044] Figure 37 is a plan view showing an example of the second electrode of the second display region.

[0045] Figure 38 is a plan view showing the second electrode of Example 1.

[0046] Figure 39 is a graph showing an evaluation method of diffraction characteristics of the second electrode.

[0047] Figure 40 is a graph showing evaluation results of the second electrode of Example 1.

[0048] Figure 41 is a graph showing evaluation results of the second electrode of Example 1.

[0049] Figure 42 is a plan view showing the second electrode of the second display region of Example 2.

[0050] Figure 43 is a graph showing evaluation results of the second electrode of Example 2.

[0051] Figure 44 is a graph showing evaluation results of the second electrode of Example 2.

[0052] Figure 45 is a plan view showing an example of the second electrode of the second display region.

[0053] Figure 46 is a plan view showing an example of the first electrode segment, the second electrode segment, and the third electrode segment of the second electrode.

[0054] Figure 47 is a plan view showing an example of the organic device.

[0055] Figure 48 is a plan view showing an example of the second display region.

[0056] Figure 49 is a plan view showing an example of a mask for forming the suppression layer.

[0057] Figure 50 is a sectional view showing an example of a process of forming the suppression layer.

[0058] Figure 51 is a plan view showing an example of a mask for forming the second electrode.

[0059] Figure 52 is a cross-sectional view showing an example of a process of forming the second electrode.

[0060] Figure 53 is a cross-sectional view showing an example of a process of forming the second electrode.

[0061] Figure 54 is a cross-sectional view showing an example of a process of removing the second electrode. DETAILED DESCRIPTION

[0062] In the present specification and the accompanying drawings, unless specifically stated otherwise, the terms "substrate", "base material", "board", "sheet", and "film" and the like, which indicate a substance that becomes the basis of a certain structure, are not distinguished from each other only according to the difference in the name.

[0063] In the present specification and the accompanying drawings, unless specifically stated otherwise, regarding terms such as "parallel", "perpendicular", and the like, which specify the shape and the geometric condition and the degree thereof, or the value of the length, the angle, and the like, they are not limited to the strict meaning, but are interpreted within the range that can expect the same function to the extent.

[0064] In the present specification and the accompanying drawings, unless specifically stated otherwise, in the case where a certain structure of a certain component or a certain region and the like is "on" or "under", "upper side" or "lower side", or "above" or "below" a certain structure of another component or another region and the like, the case where the certain structure and the certain structure are in direct contact is included. Also, the case where another structure is included between the certain structure and the certain structure, that is, the case where they are in indirect contact is also included. In addition, unless specifically stated otherwise, the statement of "on", "upper side", or "above", or "under", "lower side", or "below" can also be reversed.

[0065] In the present specification and the accompanying drawings, unless specifically stated otherwise, there are cases where the same reference numerals or similar reference numerals are assigned to the same parts or parts having the same function, and the repeated explanation thereof is omitted. In addition, there are cases where the size ratio of the drawing is different from the actual ratio for the convenience of explanation, or a part of the structure is omitted from the drawing.

[0066] In the present specification and the accompanying drawings, unless specifically stated otherwise, the embodiments of the present disclosure can also be combined with other embodiments or modified examples within a range where there is no contradiction. In addition, the other embodiments can be combined with each other, or the other embodiments and the modified examples can be combined within a range where there is no contradiction. In addition, the modified examples can also be combined with each other within a range where there is no contradiction.

[0067] In the present specification and the accompanying drawings, in the case where a plurality of steps are disclosed with respect to a manufacturing method or the like, other steps not disclosed can be implemented between the disclosed steps, unless specifically described. In addition, the order of the disclosed steps is arbitrary within a range where no contradiction occurs.

[0068] In the present specification and the accompanying drawings, a range expressed by a sign such as "~" includes values or elements placed before and after the sign such as "~", unless specifically described. For example, a value range defined by the expression "34 mass% to 38 mass%" is the same as a value range defined by the expression "34 mass% or more and 38 mass% or less". For example, a range defined by the expression "masks 50A to 50C" includes masks 50A, 50B, and 50C.

[0069] In one embodiment of the present specification, an example in which a mask set including a plurality of masks is used to form an electrode on a substrate at the time of manufacturing an organic EL display device is described. However, the use of the mask set is not particularly limited, and the present embodiment can be applied to mask sets for various uses. For example, the mask set of the present embodiment can also be used in order to form an electrode of a device for displaying or projecting an image or a video for expressing virtual reality (so-called VR) or augmented reality (so-called AR). In addition, the mask set of the present embodiment can also be used in order to form an electrode of a liquid crystal display device or an electrode of a display device other than an organic EL display device. In addition, the mask set of the present embodiment can also be used in order to form an electrode of a pressure sensor or an electrode of an organic device other than a display device.

[0070] A first mode of the present disclosure is an organic device including: a substrate; a first electrode on the substrate; an organic layer on the first electrode; and a second electrode on the organic layer, the organic device including: a first display region including the second electrode having a first occupancy ratio; and a second display region including the second electrode having a second occupancy ratio smaller than the first occupancy ratio, the organic layer being aligned in a first direction and a second direction intersecting the first direction in the second display region, the second electrode including electrode lines aligned in the first direction, the electrode lines including electrode segments aligned in the second direction and overlapping the organic layer, two electrode segments adjacent in the second direction being connected to each other, the electrode segments including: a first electrode segment having a first shape; and a second electrode segment having a second shape different from the first shape.

[0071] The second aspect of the present disclosure can be the organic device of the first aspect described above, wherein the first electrode segment includes a first pixel segment overlapping the organic layer, and a first connection segment connected to the first pixel segment. The second electrode segment can include a second pixel segment overlapping the organic layer, and a second connection segment connected to the second pixel segment. The first connection segment can have a shape different from a shape of the second connection segment.

[0072] The third aspect of the present disclosure can be the organic device of the second aspect described above, wherein an area of the first connection segment is different from an area of the second connection segment.

[0073] The fourth aspect of the present disclosure can be the organic device of either the second aspect described above or the third aspect described above, wherein the first connection segment includes a first connection end connected to the first pixel segment, and a second connection end located on an opposite side of the first connection end in the second direction. A position of the first connection end in the first direction can be the same as a position of the second connection end in the first direction. The second connection segment can include a third connection end connected to the second pixel segment, and a fourth connection end located on an opposite side of the third connection end in the second direction. A position of the third connection end in the first direction can be different from a position of the fourth connection end in the first direction.

[0074] The fifth aspect of the present disclosure can be the organic device of each of the first aspect described above to the fourth aspect described above, wherein the first electrode segment includes a first pixel segment overlapping the organic layer, and a first connection segment connected to the first pixel segment. The second electrode segment can include a second pixel segment overlapping the organic layer, and a second connection segment connected to the second pixel segment. A shape of the first pixel segment can be different from a shape of the second pixel segment.

[0075] The sixth aspect of the present disclosure can be the organic device of the fifth aspect described above, wherein an area of the first pixel segment can be different from an area of the second pixel segment.

[0076] The seventh aspect of the present disclosure can be the organic device of either the fifth aspect described above or the sixth aspect described above, wherein a size of the first pixel segment in the first direction is different from a size of the second pixel segment in the first direction.

[0077] The eighth aspect of the present disclosure can be the organic device of each of the first aspect described above to the seventh aspect described above, wherein the electrode segment includes an electrode first connection connecting the first electrode segment and the second electrode segment in the second direction, and an electrode second connection connecting the first electrode segment and the first electrode segment in the second direction.

[0078] The 9th aspect of the present disclosure can be the organic device of any of the above 1st to 8th aspects, wherein the electrode segments include: an electrode 1st array in which the 1st electrode segments and the 2nd electrode segments are arranged in the 1st direction; and an electrode 2nd array in which the 1st electrode segments and the 1st electrode segments are arranged in the 1st direction.

[0079] The 10th aspect of the present disclosure can be the organic device of any of the above 1st to 9th aspects, wherein the electrode segments include a 3rd electrode segment having a 3rd shape different from the 1st shape and the 2nd shape.

[0080] The 11th aspect of the present disclosure is a mask set having a mask 1st direction and a mask 2nd direction intersecting the mask 1st direction, wherein the mask set includes two or more masks including a shield region and a through-hole, and a mask stack in which two or more of the masks overlap includes a through region overlapping the through-hole when viewed in a normal direction of the mask, and the mask stack includes, when viewed in the normal direction of the mask: a mask 1st region including the through region having a 1st aperture ratio; and a mask 2nd region including the through region having a 2nd aperture ratio smaller than the 1st aperture ratio, and in the mask 2nd region, the through region includes through lines arranged in the mask 1st direction, the through lines include through segments arranged in the mask 2nd direction, two adjacent through segments in the mask 2nd direction are connected to each other, and the through segments include: a 1st through segment having a 1st through shape; and a 2nd through segment having a 2nd through shape different from the 1st through shape.

[0081] The 12th aspect of the present disclosure can be the mask set of the above 11th aspect, wherein the 1st through segment includes: a 1st main segment; and a 1st sub-segment connected to the 1st main segment. The 2nd through segment can include: a 2nd main segment; and a 2nd sub-segment connected to the 2nd main segment. The shape of the 1st sub-segment can be different from the shape of the 2nd sub-segment.

[0082] The 13th aspect of the present disclosure can be the mask set of the above 12th aspect, wherein the area of the 1st sub-segment can be different from the area of the 2nd sub-segment.

[0083] The 14th aspect of the present disclosure can be that, in the mask set of any one of the above-mentioned 12th aspect or the above-mentioned 13th aspect, the first sub-section includes a fifth connection end connected with the first main section, and a sixth connection end located on the opposite side of the fifth connection end in the mask second direction. The position of the fifth connection end in the mask first direction can be the same as the position of the sixth connection end in the mask first direction. The second sub-section can include a seventh connection end connected with the second main section, and an eighth connection end located on the opposite side of the seventh connection end in the mask second direction. The position of the seventh connection end in the mask first direction can be different from the position of the eighth connection end in the mask first direction.

[0084] The 15th aspect of the present disclosure can be that, in the mask set of each of the above-mentioned 11th aspect to the above-mentioned 14th aspect, the first through section includes a first main section, and a first sub-section connected with the first main section. The second through section can include a second main section, and a second sub-section connected with the second main section. The shape of the first main section can be different from the shape of the second main section.

[0085] The 16th aspect of the present disclosure can be that, in the mask set of the above-mentioned 15th aspect, the area of the first main section can be different from the area of the second main section.

[0086] The 17th aspect of the present disclosure can be that, in the mask set of any one of the above-mentioned 15th aspect and the above-mentioned 16th aspect, the size of the first main section in the mask first direction is different from the size of the second main section in the mask first direction.

[0087] The 18th aspect of the present disclosure can be that, in the mask set of each of the above-mentioned 11th aspect to the above-mentioned 17th aspect, the through section includes a mask first connection of the first through section and the second through section connected in the mask second direction, and a mask second connection of the first through section and the first through section connected in the mask second direction.

[0088] The 19th aspect of the present disclosure can be that, in the mask set of each of the above-mentioned 11th aspect to the above-mentioned 18th aspect, the through section includes a mask first arrangement of the first through section and the second through section arranged in the mask first direction, and a mask second arrangement of the first through section and the first through section arranged in the mask first direction.

[0089] The 20th aspect of the present disclosure can be that, in the mask set of each of the above-mentioned 11th aspect to the above-mentioned 19th aspect, the through-hole section includes a 3rd through-hole section having a 3rd through-hole shape different from the 1st through-hole shape and the 2nd through-hole shape.

[0090] The 21st aspect of the present disclosure is a mask having a mask 1st direction and a mask 2nd direction intersecting the mask 1st direction, wherein the mask includes a mask 3rd region including the through-holes having a 3rd opening ratio and a mask 4th region including the through-holes having a 4th opening ratio smaller than the 3rd opening ratio, the through-holes are arranged in a 15th period in the mask 1st direction in the mask 3rd region, a space between two of the through-holes arranged in the mask 1st direction is larger than the 15th period in the mask 4th region, and the mask 4th region includes the through-holes having a shape different from the through-holes of the mask 3rd region.

[0091] The 22nd aspect of the present disclosure can be that, in the mask of the above-mentioned 21st aspect, the through-holes in the mask 3rd region can include main holes and sub-holes. A space between the main holes and the sub-holes can be 5 μm or more and 40 μm or less. In the mask 4th region, the through-holes can include 1st type through-holes and 2nd type through-holes. The number of the main holes of the 1st type through-holes can be different from the number of the main holes of the 2nd type through-holes. Alternatively, the number of the sub-holes of the 1st type through-holes can be different from the number of the sub-holes of the 2nd type through-holes.

[0092] The 23rd aspect of the present disclosure can be that, in the mask of the above-mentioned 22nd aspect, in the mask 4th region, the through-holes include a hole 1st arrangement in which the 1st type through-holes and the 2nd type through-holes are arranged in the mask 1st direction, and a hole 2nd arrangement in which the 1st type through-holes and the 1st type through-holes are arranged in the mask 1st direction.

[0093] The 24th aspect of the present disclosure can be that, in the mask of any one of the above-mentioned 22nd aspect and the above-mentioned 23rd aspect, in the mask 4th region, the through-holes include a hole 4th arrangement in which the 1st type through-holes and the 2nd type through-holes are arranged in the mask 2nd direction, and a hole 5th arrangement in which the 2nd type through-holes and the 2nd type through-holes are arranged in the mask 2nd direction.

[0094] The 25th aspect of the present disclosure is a method for manufacturing an organic device, wherein the method for manufacturing an organic device includes a second electrode forming step of forming a second electrode on an organic layer on a first electrode on a substrate using the mask set according to any one of the 11th to 20th aspects, the second electrode forming step including a step of forming a first layer of the second electrode by an evaporation method using a first one of the masks, and a step of forming a second layer of the second electrode by an evaporation method using a second one of the masks.

[0095] One embodiment of the present disclosure will be described in detail with reference to the drawings. Furthermore, the embodiments shown below are examples of the embodiments of the present disclosure, and the present disclosure is not interpreted as being limited to only these embodiments.

[0096] First, the organic device 100 will be described. The organic device 100 includes electrodes formed by using the mask set of the present embodiment. Figure 1 is a plan view showing an example of the organic device 100 when viewed in the normal direction of the substrate of the organic device 100. In the following description, the case of viewing in the normal direction of the plane of a substance serving as a base such as a substrate is also referred to as plan view.

[0097] The organic device 100 includes a substrate and a plurality of elements 115 arranged in the in-plane direction of the substrate. The element 115 is, for example, a pixel. As shown in Figure 1 , the organic device 100 can include a first display region 101 and a second display region 102 when viewed in plan. The second display region 102 can have a smaller area than the first display region 101. As shown in Figure 1 , the second display region 102 can be surrounded by the first display region 101. Although not shown, a part of the outer edge of the second display region 102 can also be on the same line as a part of the outer edge of the first display region 101.

[0098] Figure 2 is a plan view showing the second display region 102 of Figure 1 and its surroundings in an enlarged manner. In the first display region 101, the elements 115 can also be arranged in two different directions. In the example shown in Figure 1 and Figure 2 , two or more elements 115 of the first display region 101 can be arranged in an element first direction G1. Two or more elements 115 of the first display region 101 can also be arranged in an element second direction G2 intersecting the element first direction G1. The element second direction G2 can also be perpendicular to the element first direction G1.

[0099] The organic device 100 has the second electrode 140. The second electrode 140 is positioned on the organic layer 130 described later. The second electrode 140 can be electrically connected to two or more organic layers 130. For example, the second electrode 140 can overlap two or more organic layers 130 in plan view. The second electrode 140 positioned in the first display region 101 is also denoted as the second electrode 140X. The second electrode 140 positioned in the second display region 102 is also denoted as the second electrode 140Y.

[0100] The second electrode 140X has a first area occupancy. The first area occupancy is calculated by dividing the sum of the areas of the second electrode 140 positioned in the first display region 101 by the area of the first display region 101. The second electrode 140Y has a second area occupancy. The second area occupancy is calculated by dividing the sum of the areas of the second electrode 140 positioned in the second display region 102 by the area of the second display region 102. The second area occupancy can be smaller than the first area occupancy. For example, as shown in FIG. 1, the second display region 102 can include a non-transmissive region 103 and a transmissive region 104. The transmissive region 104 does not overlap the second electrode 140Y in plan view. The non-transmissive region 103 overlaps the second electrode 140Y in plan view. Figure 2

[0101] ​The ratio of the second area occupancy to the first area occupancy may be, for example, 0.2 or more, 0.3 or more, or 0.4 or more. The ratio of the second area occupancy to the first area occupancy may be, for example, 0.6 or less, 0.7 or less, or 0.8 or less. The range of the ratio of the second area occupancy to the first area occupancy can be defined by a first group consisting of 0.2, 0.3, and 0.4 and / or a second group consisting of 0.6, 0.7, and 0.8. The range of the ratio of the second area occupancy to the first area occupancy can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the ratio of the second area occupancy to the first area occupancy can be defined by a combination of any two of the values included in the first group described above. The range of the ratio of the second area occupancy to the first area occupancy can be defined by a combination of any two of the values included in the second group described above. For example, the ratio of the second area occupancy to the first area occupancy can be 0.2 or more and 0.8 or less, 0.2 or more and 0.7 or less, 0.2 or more and 0.6 or less, 0.2 or more and 0.4 or less, 0.2 or more and 0.3 or less, 0.3 or more and 0.8 or less, 0.3 or more and 0.7 or less, 0.3 or more and 0.6 or less, 0.3 or more and 0.4 or less, 0.4 or more and 0.8 or less, 0.4 or more and 0.7 or less, 0.4 or more and 0.6 or less, 0.6 or more and 0.8 or less, 0.6 or more and 0.7 or less, or 0.7 or more and 0.8 or less.

[0102] The transmittance of the non-transmissive region 103 is also referred to as a first transmittance. The transmittance of the transmissive region 104 is also referred to as a second transmittance. Since the transmissive region 104 does not include the second electrode 140Y, the second transmittance is higher than the first transmittance. Therefore, in the second display region 102 including the transmissive region 104, light reaching the organic device 100 can reach an optical member or the like on the back surface side of the substrate through the transmissive region 104. The optical member is, for example, a member that enables a certain function by detecting light, such as a camera. Since the second display region 102 includes the non-transmissive region 103, an image can be displayed in the second display region 102 in the case where the element 115 is a pixel. In this way, the second display region 102 can detect light and display an image. The function of the second display region 102 enabled by detecting light is, for example, a sensor such as a camera, a fingerprint sensor, a face authentication sensor, or the like. The higher the second transmittance of the transmissive region 104 of the second display region 102 and the lower the second area occupancy, the more the amount of light received by the sensor can be increased.

[0103] In a case where any of the size of the non-transmission region 103 in the element first direction G1 and the element second direction G2 and the size of the transmission region 104 in the element first direction G1 and the element second direction G2 is 1 mm or less, the first transmittance and the second transmittance are measured using a microspectrophotometer. As the microspectrophotometer, any of OSP-SP200 manufactured by Olympus Corporation or LCF series manufactured by DKK TOA Corporation can be used. Any of the microspectrophotometers can measure the transmittance in a visible light region of 380 nm or more and 780 nm or less. Any of quartz or borosilicate glass for TFT liquid crystal, alkali-free glass for TFT liquid crystal is used as a reference. The measurement result at 550 nm is used as the first transmittance and the second transmittance.

[0104] In a case where both the size of the non-transmission region 103 in the element first direction G1 and the element second direction G2 and the size of the transmission region 104 in the element first direction G1 and the element second direction G2 are more than 1 mm, the first transmittance and the second transmittance are measured using a spectrophotometer. As the spectrophotometer, any of ultraviolet-visible spectrophotometer UV-2600i or UV-3600i Plus manufactured by Shimadzu Corporation can be used. By mounting a micro-beam diaphragm unit on the spectrophotometer, it is possible to measure the transmittance of a region having a size of at most 1 mm. Air is used as a reference. The measurement result at 550 nm is used as the first transmittance and the second transmittance.

[0105] The ratio TR2 / TR1 of the second transmittance TR2 to the first transmittance TR1 can be, for example, 1.2 or more, 1.5 or more, or 1.8 or more. The ratio TR2 / TR1 can be, for example, 2 or less, 3 or less, or 4 or less. The range of the ratio TR2 / TR1 can be defined by a first group consisting of 1.2, 1.5, and 1.8 and / or a second group consisting of 2, 3, and 4. The range of the ratio TR2 / TR1 can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the ratio TR2 / TR1 can be defined by a combination of any two of the values included in the first group described above. The range of the ratio TR2 / TR1 can be defined by a combination of any two of the values included in the second group described above. For example, the ratio TR2 / TR1 can be 1.2 or more and 4 or less, 1.2 or more and 3 or less, 1.2 or more and 2 or less, 1.2 or more and 1.8 or less, 1.2 or more and 1.5 or less, 1.5 or more and 4 or less, 1.5 or more and 3 or less, 1.5 or more and 2 or less, 1.5 or more and 1.8 or less, 1.8 or more and 4 or less, 1.8 or more and 3 or less, 1.8 or more and 2 or less, 2 or more and 4 or less, 2 or more and 3 or less, or 3 or more and 4 or less.

[0106] As shown in FIG. 1, the second electrode 140Y can include two or more electrode lines 140L arranged in the element first direction G1. The electrode lines 140L can extend in the element second direction G2. For example, the electrode lines 140L can include a first end 140L1 connected to the second electrode 140X of the first display region 101 and a second end 140L2. The second end 140L2 is located on the side opposite to the first end 140L1 in the element second direction G2. Although not shown, in a case where a part of the outer edge of the second display region 102 and a part of the outer edge of the first display region 101 are located on the same straight line, the end of the electrode line 140L connected to the second electrode 140X can be only one. Figure 2

[0107] As shown in FIG. 1, the two electrode lines 140L adjacent to each other in the element first direction G1 can not be connected to each other. Thereby, the transmissive region 104 can be able to extend in the element second direction G2 without being blocked by the electrode lines 140L. Thus, it can be possible to suppress the transmissive region 104 from having periodicity in the element second direction G2. Thereby, it can be possible to suppress the light transmitted through the transmissive region 104 at each position in the element second direction G2 from being enhanced by each other. Figure 2

[0108] Figure 2 ​​​As shown, the transmission region 104 can cross the second display region 102 in the element second direction G2. For example, the electrode line 140L can include a first end 104L1 and a second end 104L2 that are connected to the second electrode 140X of the first display region 101. Thus, the size G40 of the transmission region 104 in the element second direction G2 can be further increased. Therefore, the light that passes through the transmission region 104 at each position in the element second direction G2 can be suppressed from being mutually enhanced. The second end 104L2 is located on the side opposite the first end 104L1 in the element second direction G2. The first end 104L1 and the second end 104L2 are adjacent to the first end 140L1 and the second end 140L2 of the electrode line 140L in the element first direction G1. Although not shown, in the case where a portion of the outer edge of the second display region 102 is located on the same line as a portion of the outer edge of the first display region 101, the end of the transmission region 104 that is connected to the second electrode 140X in the element second direction G2 can be only one.

[0109] By making the size G40 of the transmission region 104 in the element second direction G2 large, thus, the light that reaches the organic device 100 easily passes through the second display region 102. For example, the transmittance of the second display region 102 can be further improved. Thus, the function of the second display region 102 to detect light can be improved.

[0110] It is also possible that not all of the transmission regions 104 cross the second display region 102. For example, the organic device 100 can include at least two transmission regions 104 that cross the second display region 102 in the element second direction G2. For example, the organic device 100 can include at least one group of two electrode lines 140L that are adjacent in the element first direction G1 and are not connected to each other.

[0111] Figure 3 is a plan view that enlarges the second electrode 140X of the first display region 101 and the second electrode 140Y of the second display region 102. Both the second electrode 140X and the second electrode 140Y can overlap the organic layer 130 when viewed from above. The organic layer 130 is one constituent element of the element 115.

[0112] In the first display region 101, the organic layer 130 can be arranged in an eleventh period P11 along the element first direction G1. In the second display region 102, the organic layer 130 can be arranged in a twelfth period P12 along the element first direction G1. The twelfth period P12 can be larger than the eleventh period P11. By making the twelfth period P12 larger than the eleventh period P11, thus, the second occupancy of the second electrode 140Y becomes small. Thus, the area of the transmission region 104 becomes large, and the amount of light received by the sensor can be increased. As described later, the twelfth period P12 can also be the same as the eleventh period P11.

[0113] The ratio of period 12 P12 to period 11 P11 can be, for example, greater than 1.0, greater than 1.1, greater than 1.3, or greater than 1.5. The ratio of period 12 P12 to period 11 P11 can be, for example, less than 2.0, less than 3.0, or less than 4.0. The range of the ratio of period 12 P12 to period 11 P11 can be defined by a first group consisting of 1.0, 1.1, 1.3, and 1.5 and / or a second group consisting of 2.0, 3.0, and 4.0. The range of the ratio of period 12 P12 to period 11 P11 can be defined by a combination of any one value from the first group and any one value from the second group. The range of the ratio of period 12 P12 to period 11 P11 can be defined by a combination of any two values ​​from the first group. The range of the ratio of period 12 P12 to period 11 P11 can be defined by any combination of two values ​​from the second group mentioned above. For example, the ratio of period 12 P12 to period 11 P11 can be greater than or equal to 1.0 and less than 4.0, greater than or equal to 1.0 and less than 3.0, greater than or equal to 1.0 and less than 2.0, greater than or equal to 1.0 and less than 1.5, greater than or equal to 1.0 and less than 1.3, greater than or equal to 1.0 and less than 1.1, greater than or equal to 1.1 and less than 4.0, greater than or equal to 1.1 and less than 3.0, greater than or equal to 1.1 and less than 2.0, or greater than or equal to 1.1 and less than 1.5. The values ​​can be 1.1 or higher and 1.3 or lower, 1.3 or higher and 4.0 or lower, 1.3 or higher and 3.0 or lower, 1.3 or higher and 2.0 or lower, 1.3 or higher and 1.5 or lower, 1.5 or higher and 4.0 or lower, 1.5 or higher and 3.0 or lower, 1.5 or higher and 2.0 or lower, 2.0 or higher and 4.0 or lower, 2.0 or higher and 3.0 or lower, or 3.0 or higher and 4.0 or lower. When the ratio of the 12th period P12 to the 11th period P11 is small, the difference between the pixel density of the second display area 102 and the pixel density of the first display area 101 becomes smaller. Therefore, visual differences between the first display area 101 and the second display area 102 can be suppressed.

[0114] The dimension G40 of the transmission region 104 in the second direction G2 of the element can be determined based on the 12th period P12. The ratio of dimension G40 to the 12th period P12 can be, for example, 2 or more, 5 or more, or 10 or more. The ratio of dimension G40 to the 12th period P12 can be, for example, 100 or less, 300 or less, 1000 or less, or 2000 or less. The range of the ratio of dimension G40 to the 12th period P12 can be defined by a first group consisting of 2, 5, and 10 and / or a second group consisting of 100, 300, 1000, and 2000. The range of the ratio of dimension G40 to the 12th period P12 can be defined by a combination of any one value from the first group and any one value from the second group. The range of the ratio of dimension G40 to the 12th period P12 can be defined by a combination of any two values ​​from the first group. The range of the ratio of size G40 to the 12th period P12 can be defined by any combination of two values ​​included in the second group above. For example, the ratio of size G40 to the 12th period P12 can be greater than 2 and less than 3000, greater than 2 and less than 100, greater than 2 and less than 10, greater than 2 and less than 5, greater than 5 and less than 2000, greater than 5 and less than 1000, greater than 5 and less than 300, greater than 5 and less than 100, or greater than 5 and less than 100. The values ​​can be 0 or less, or 10 or more and 2000 or less, or 10 or more and 1000 or less, or 10 or more and 300 or less, or 10 or more and 100 or less, or 100 or more and 2000 or less, or 100 or more and 1000 or less, or 100 or more and 300 or less, or 300 or more and 2000 or less, or 300 or more and 1000 or less, or 1000 or more and 2000 or less. By increasing the ratio of size G40 to the 12th period P12, it is possible to suppress the situation where light transmitted through the transmission region 104 at various positions in the second direction G2 of the element mutually enhances each other.

[0115] For dimension G40, it is calculated by measuring the dimensions of all the transmissive regions 104 located in the second display region 102 in the second direction G2 of the element and averaging them.

[0116] In the first display region 101, the organic layer 130 can be arranged in the 21st period P21 along the element second direction G2. In the second display region 102, the organic layer 130 can be arranged in the 22nd period P22 along the element second direction G2. The 22nd period P22 can be larger than the 21st period P21. As described later, the 22nd period P22 can also be the same as the 21st period P21.

[0117] The ratio of the 22nd period P22 to the 21st period P21 can be, for example, 1.0 or more, 1.1 or more, 1.3 or more, or 1.5 or more. The ratio of the 22nd period P22 to the 21st period P21 can be, for example, 2.0 or less, 3.0 or less, or 4.0 or less. The range of the ratio of the 22nd period P22 to the 21st period P21 can be defined by a first group consisting of 1.0, 1.1, 1.3, and 1.5 and / or a second group consisting of 2.0, 3.0, and 4.0. The range of the ratio of the 22nd period P22 to the 21st period P21 can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the ratio of the 22nd period P22 to the 21st period P21 can be defined by a combination of any two of the values included in the first group described above. The range of the ratio of the 22nd period P22 to the 21st period P21 can be defined by a combination of any two of the values included in the second group described above. For example, the ratio of the 22nd period P22 to the 21st period P21 can be 1.0 or more and 4.0 or less, 1.0 or more and 3.0 or less, 1.0 or more and 2.0 or less, 1.0 or more and 1.5 or less, 1.0 or more and 1.3 or less, 1.0 or more and 1.1 or less, 1.1 or more and 4.0 or less, 1.1 or more and 3.0 or less, 1.1 or more and 2.0 or less, 1.1 or more and 1.5 or less, 1.1 or more and 1.3 or less, 1.3 or more and 4.0 or less, 1.3 or more and 3.0 or less, 1.3 or more and 2.0 or less, 1.3 or more and 1.5 or less, 1.5 or more and 4.0 or less, 1.5 or more and 3.0 or less, 1.5 or more and 2.0 or less, 2.0 or more and 4.0 or less, 2.0 or more and 3.0 or less, 3.0 or more and 4.0 or less. In a case where the ratio of the 22nd period P22 to the 21st period P21 is small, the difference between the pixel density of the second display region 102 and the pixel density of the first display region 101 becomes small. Thus, it is possible to suppress the generation of a visual difference between the first display region 101 and the second display region 102.

[0118] The electrode line 140L can overlap, in plan view, two or more organic layers 130 arranged in the element second direction G2.

[0119] The reference sign G11 denotes a gap between two electrode lines 140L adjacent in the element first direction G1. The gap G11 is determined in accordance with the second transmittance TR2 of the transmissive region 104. The gap G11 can also be determined with reference to the eleventh period P11 of the organic layer 130.

[0120] The ratio of the gap G11 to the eleventh period P11 can be 0.3 or more, 0.5 or more, or 1.0 or more, for example. The ratio of the gap G11 to the eleventh period P11 can be 1.5 or less, 2.0 or less, or 3.0 or less, for example. The range of the ratio of the gap G11 to the eleventh period P11 can be defined by a first group consisting of 0.3, 0.5, and 1.0 and / or a second group consisting of 1.5, 2.0, and 3.0. The range of the ratio of the gap G11 to the eleventh period P11 can be defined by a combination of any one of the values included in the above first group and any one of the values included in the above second group. The range of the ratio of the gap G11 to the eleventh period P11 can be defined by a combination of any two of the values included in the above first group. The range of the ratio of the gap G11 to the eleventh period P11 can be defined by a combination of any two of the values included in the above second group. For example, the ratio of the gap G11 to the eleventh period P11 can be 0.3 or more and 3.0 or less, 0.3 or more and 2.0 or less, 0.3 or more and 1.5 or less, 0.3 or more and 1.0 or less, 0.3 or more and 0.5 or less, 0.5 or more and 3.0 or less, 0.5 or more and 2.0 or less, 0.5 or more and 1.5 or less, 0.5 or more and 1.0 or less, 1.0 or more and 3.0 or less, 1.0 or more and 2.0 or less, 1.0 or more and 1.5 or less, 1.5 or more and 3.0 or less, 1.5 or more and 2.0 or less, or 2.0 or more and 3.0 or less.

[0121] The interval G11may be, for example, 10 μm or more, 50 μm or more, 100 μm or more, or 150 μm or more. The interval G11may be, for example, 200 μm or less, 250 μm or less, or 300 μm or less. The interval G11may be in a range defined by a first group consisting of 10 μm, 50 μm, 100 μm, and 150 μm and / or a second group consisting of 200 μm, 250 μm, and 300 μm. The interval G11may be in a range defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The interval G11may be in a range defined by a combination of any two of the values included in the first group described above. The interval G11may be in a range defined by a combination of any two of the values included in the second group described above. For example, the interval G11may be 10 μm or more and 300 μm or less, 10 μm or more and 250 μm or less, 10 μm or more and 200 μm or less, 10 μm or more and 150 μm or less, 10 μm or more and 100 μm or less, 10 μm or more and 50 μm or less, 50 μm or more and 300 μm or less, 50 μm or more and 250 μm or less, 50 μm or more and 200 μm or less, 50 μm or more and 150 μm or less, 50 μm or more and 100 μm or less, 100 μm or more and 300 μm or less, 100 μm or more and 250 μm or less, 100 μm or more and 200 μm or less, 100 μm or more and 150 μm or less, 150 μm or more and 300 μm or less, 150 μm or more and 250 μm or less, 150 μm or more and 200 μm or less, 200 μm or more and 300 μm or less, 200 μm or more and 250 μm or less, or 250 μm or more and 300 μm or less.

[0122] It is preferable that the interval G11not be fixed. For example, the interval G11may vary depending on the position in the element first direction G1or the element second direction G2. Thereby, it is possible to suppress mutual enhancement of light diffracted when passing through the transmission region 104. Thus, it is possible to suppress the incidence of diffracted light having high intensity to the sensor. Thereby, for example, it is possible to suppress blurring of an image generated by the sensor.

[0123] An example of a specific structure for varying the interval G11will be described. As shown in FIG. 6, the interval G11may be varied by providing a plurality of transmission regions 104 in the element first direction G1or the element second direction G2. Figure 3As shown, the electrode line 140L can include two or more electrode segments 141 arranged in the element second direction G2. The electrode segment 141 can overlap the organic layer 130 when viewed in plan. For example, one electrode segment 141 can overlap one organic layer 130. In other words, in the element second direction G2, the electrode segments 141 can be arranged in the above-described 22nd period P22. Two electrode segments 141 adjacent to each other in the element second direction G2 can be connected to each other.

[0124] The electrode segment 141 can include a first electrode segment 141A and a second electrode segment 141B. For example, the electrode segment 141 can be either of the first electrode segment 141A and the second electrode segment 141B. The first electrode segment 141A can have a first shape. The second electrode segment 141B can have a second shape different from the first shape. That is, the shape of the second electrode segment 141B can be different from the shape of the first electrode segment 141A. Since the electrode segment 141 includes the first electrode segment 141A and the second electrode segment 141B having mutually different shapes, it is possible to suppress the interval G11 from becoming constant regardless of position.

[0125] The electrode segment 141 can include an electrode first connection 144A and an electrode second connection 144B. The electrode first connection 144A refers to a combination of the first electrode segment 141A and the second electrode segment 141B connected in the element second direction G2. The electrode second connection 144B refers to a combination of two first electrode segments 141A connected in the element second direction G2.

[0126] The electrode segment 141 can include an electrode first arrangement 145A and an electrode second arrangement 145B. The electrode first arrangement 145A refers to a combination of the first electrode segment 141A and the second electrode segment 141B arranged in the element first direction G1. The electrode second arrangement 145B refers to a combination of two first electrode segments 141A arranged in the element first direction G1.

[0127] The electrode segment 141 can include the electrode first arrangement 145A, the electrode second arrangement 145B, and an electrode third arrangement 145C. The electrode third arrangement 145C refers to a combination of two second electrode segments 141B arranged in the element first direction G1.

[0128] The first electrode segment 141A and the second electrode segment 141B can be configured in a manner in which the interval G11 irregularly varies. For example, the first electrode segment 141A and the second electrode segment 141B can be configured based on a Fibonacci sequence.

[0129] The Fibonacci sequence includes S0S1S2S3S4S5S6S7S8S9…. n is obtained by joining the first one string and the first two strings. That is, n = Sn-1 S n-2 n is an integer of 2 or more. In the case of S0=L and S1=LS, the Fibonacci sequence includes the following arrangement.

[0130] LLSLLSLSLLSLLSLSLLSLSLLSLLSLSLLSLLSLSLLSLS…

[0131] For example, the first electrode segment 141A is applied to L, and the second electrode segment 141B is applied to S. Thus, the electrode segment 141 can include the first electrode segment 141A and the second electrode segment 141B arranged irregularly in the element second direction G2.

[0132] The specific difference between the first shape and the second shape is arbitrary. For example, the area of the second shape can be different from the area of the first shape. For example, the size of the second shape in the element first direction G1 or the element second direction G2 can be different from the size of the first shape in the element first direction G1 or the element second direction G2. For example, the position of the end portion of the second shape in the element first direction G1 or the element second direction G2 can be different from the position of the end portion of the first shape in the element first direction G1 or the element second direction G2.

[0133] Reference Figure 4 and Figure 5 Examples of the shape of the first electrode segment 141A and the shape of the second electrode segment 141B will be described. Figure 4 is a plan view illustrating an example of the first electrode segment 141A. Figure 5 is a plan view illustrating an example of the second electrode segment 141B.

[0134] As illustrated in Figure 4 , the first electrode segment 141A can include a first pixel segment 142A and a first connection segment 143A. The first pixel segment 142A can overlap the organic layer 130 when viewed from above. The first connection segment 143A can be connected to the first pixel segment 142A. The first connection segment 143A can include a first connection end 143A1 and a second connection end 143A2. The first connection end 143A1 can be connected to the first pixel segment 142A. The second connection end 143A2 is located on the side opposite to the first connection end 143A1 in the element second direction G2.

[0135] As illustrated in Figure 5As shown, the second electrode segment 141B may include a second pixel segment 142B and a second connecting segment 143B. The second pixel segment 142B may overlap with the organic layer 130 when viewed from above. The second connecting segment 143B may be connected to the second pixel segment 142B. The second connecting segment 143B may include a third connecting terminal 143B1 and a fourth connecting terminal 143B2. The third connecting terminal 143B1 may be connected to the second pixel segment 142B. The fourth connecting terminal 143B2 is located on the side opposite to the third connecting terminal 143B1 in the second direction G2 of the element.

[0136] The shape of the first connecting segment 143A may be different from the shape of the second connecting segment 143B.

[0137] For example, the area of ​​the first connecting segment 143A may be different from the area of ​​the second connecting segment 143B. Figure 4 and Figure 5 In the example shown, the area of ​​the first connecting segment 143A is smaller than that of the second connecting segment 143B.

[0138] For example, the average value of the dimension W2A of the first connecting segment 143A in the first direction G1 of the element may be different from the average value of the dimension W2B of the second connecting segment 143B in the first direction G1 of the element. Figure 4 and Figure 5 In the example shown, the average value of dimension W2A is less than the average value of dimension W2B.

[0139] For example, the position of the second connection terminal 143A2 in the first direction G1 of the element may differ from the position of the fourth connection terminal 143B2 in the first direction G1 of the element. "Position" can refer to its relative position to the organic layer 130 overlapping with the electrode segment 141 when viewed from above. Figure 4 In the example shown, the position of the first connection terminal 143A1 in the first direction G1 of the component is the same as the position of the second connection terminal 143A2 in the first direction G1 of the component. Figure 5 In the example shown, the position of the third connection terminal 143B1 in the first direction G1 of the component is different from the position of the fourth connection terminal 143B2 in the first direction G1 of the component. Figure 4 and Figure 5 As shown, the position of the first connection terminal 143A1 in the first direction G1 of the component is the same as the position of the third connection terminal 143B1 in the first direction G1 of the component. On the other hand, the position of the second connection terminal 143A2 in the first direction G1 of the component is different from the position of the fourth connection terminal 143B2 in the first direction G1 of the component. "Same position" means that the difference between the positions of the midpoints of the two connection terminals in the first direction G1 of the component is less than or equal to the 11th period P11 / 4. "Different position" means that the difference between the positions of the midpoints of the two connection terminals in the first direction G1 of the component is greater than or equal to the 11th period P11 / 4.

[0140] An average of the dimension W2A of the first connection section 143A in the first direction G1 of the element can be smaller than an average of the dimension W1A of the first pixel section 142A in the first direction G1 of the element. The ratio of the average of the dimension W2A to the average of the dimension W1A can be, for example, 0.1 or more, 0.2 or more, or 0.3 or more. The ratio of the average of the dimension W2A to the average of the dimension W1A can be, for example, 0.7 or less, 0.8 or less, or 0.9 or less. The ratio of the average of the dimension W2A to the average of the dimension W1A can be limited by a first group consisting of 0.1, 0.2, and 0.3 and / or a second group consisting of 0.7, 0.8, and 0.9. The ratio of the average of the dimension W2A to the average of the dimension W1A can be limited by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The ratio of the average of the dimension W2A to the average of the dimension W1A can be limited by a combination of any two of the values included in the first group described above. The ratio of the average of the dimension W2A to the average of the dimension W1A can be limited by a combination of any two of the values included in the second group described above. For example, the ratio of the average of the dimension W2A to the average of the dimension W1A can be 0.1 or more and 0.9 or less, 0.1 or more and 0.8 or less, 0.1 or more and 0.7 or less, 0.1 or more and 0.3 or less, 0.1 or more and 0.2 or less, 0.2 or more and 0.9 or less, 0.2 or more and 0.8 or less, 0.2 or more and 0.7 or less, 0.3 or more and 0.9 or less, 0.3 or more and 0.8 or less, 0.3 or more and 0.7 or less, 0.7 or more and 0.9 or less, 0.7 or more and 0.8 or less, or 0.8 or more and 0.9 or less.

[0141] The size L2A of the first connection section 143A in the element second direction G2 can be determined in accordance with the size L1A of the first pixel section 142A in the element second direction G2. The ratio of the size L2A to the size L1A can be, for example, 0.2 or more, 0.6 or more, or 0.9 or more. The ratio of the size L2A to the size L1A can be, for example, 2.0 or less, 2.5 or less, or 3.0 or less. The range of the ratio of the size L2A to the size L1A can be defined by the first group consisting of 0.2, 0.6, and 0.9 and / or the second group consisting of 2.0, 2.5, and 3.0. The range of the ratio of the size L2A to the size L1A can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the ratio of the size L2A to the size L1A can be defined by a combination of any two of the values included in the first group described above. The range of the ratio of the size L2A to the size L1A can be defined by a combination of any two of the values included in the second group described above. For example, the ratio of the size L2A to the size L1A can be 0.2 or more and 3.0 or less, 0.2 or more and 2.5 or less, 0.2 or more and 2.0 or less, 0.2 or more and 0.9 or less, 0.2 or more and 0.6 or less, 0.6 or more and 3.0 or less, 0.6 or more and 2.5 or less, 0.6 or more and 2.0 or less, 0.6 or more and 0.9 or less, 0.9 or more and 3.0 or less, 0.9 or more and 2.5 or less, 0.9 or more and 2.0 or less, 2.0 or more and 3.0 or less, 2.0 or more and 2.5 or less, or 2.5 or more and 3.0 or less. The ratio is, for example, the ratio of the maximum value of the size L2A to the maximum value of the size L1A.

[0142] The average value of the size W2B of the second connection section 143B in the element first direction G1 can be smaller than the average value of the size W1B of the second pixel section 142B in the element first direction G1. As the range of the ratio of the average value of the size W2B to the average value of the size W1B, the range of the ratio of the average value of the size W2A to the average value of the size W1A described above can be employed.

[0143] The size L2B of the second connection section 143B in the element second direction G2 can be determined in accordance with the size L1B of the second pixel section 142B in the element second direction G2. As the range of the ratio of the size L2B to the size L1B, the range of the ratio of the size L2A to the size L1A described above can be employed.

[0144] The layer structure of the second electrode 140 will be described. Figure 6 is to be described in Figure 3A plan view of the area surrounded by the double-dot chain line labeled with the reference sign VI in the organic device 100 is enlarged and shown.

[0145] The second electrode 140 can include a plurality of layers. For example, the second electrode 140 can include a first layer 140A, a second layer 140B, and a third layer 140C. The first layer 140A, the second layer 140B, and the third layer 140C are layers formed by an evaporation method using a first mask 50A, a second mask 50B, and a third mask 50C, which will be described later, respectively.

[0146] The first layer 140A can include a first main electrode 140A1 and a first sub-electrode 140A2. The area of the first main electrode 140A1 can be larger than the area of the first sub-electrode 140A2.

[0147] The second layer 140B can include a second main electrode 140B1 and a second sub-electrode 140B2. The area of the second main electrode 140B1 can be larger than the area of the second sub-electrode 140B2.

[0148] The third layer 140C can include a third main electrode 140C1 and a third sub-electrode 140C2. The area of the third main electrode 140C1 can be larger than the area of the third sub-electrode 140C2.

[0149] The first main electrode 140A1 can be connected to the second main electrode 140B1 and the third main electrode 140C1 in the element second direction G2. The first main electrode 140A1 can overlap the organic layer 130 when viewed in plan. For example, the first main electrode 140A1 can overlap the second organic layer 130B, which will be described later.

[0150] The first sub-electrode 140A2 can be connected to the second main electrode 140B1 or the third main electrode 140C1 in the element first direction G1. The first sub-electrode 140A2 can be connected to the second sub-electrode 140B2 and the third sub-electrode 140C2 in the element second direction G2. The first sub-electrode 140A2 can overlap the organic layer 130 when viewed in plan.

[0151] The first sub-electrode 140A2 can be arranged in the element third direction G3 or the element fourth direction G4 from the first main electrode 140A1.

[0152] The element third direction G3 is a direction intersecting both the element first direction Gl and the element second direction G2. The angle of the element third direction G3 with respect to the element first direction Gl and the element second direction G2 is, for example, 30° or more and 60° or less. The element fourth direction G4 is a direction intersecting both the element first direction Gl and the element second direction G2. The angle of the element fourth direction G4 with respect to the element first direction Gl and the element second direction G2 is, for example, 30° or more and 60° or less. The element third direction G3 intersects the element fourth direction G4. For example, the element third direction G3 can also be orthogonal to the element fourth direction G4.

[0153] The reference sign G41 denotes a gap between the first main electrode 140A1 and the first sub-electrode 140A2 in the element third direction G3 or the element fourth direction G4. The gap G41 can be, for example, 5 μm or more, 10 μm or more, or 15 μm or more. The gap G41 can be, for example, 30 μm or less, 35 μm or less, or 40 μm or less. The range of the gap G41 can be defined by a first group consisting of 5 μm, 10 μm, and 15 μm and / or a second group consisting of 30 μm, 35 μm, and 40 μm. The range of the gap G41 can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the gap G41 can be defined by a combination of any two of the values included in the first group described above. The range of the gap G41 can be defined by a combination of any two of the values included in the second group described above. For example, the gap G41 can be 5 μm or more and 40 μm or less, 5 μm or more and 35 μm or less, 5 μm or more and 30 μm or less, 5 μm or more and 15 μm or less, 5 μm or more and 10 μm or less, 10 μm or more and 40 μm or less, 10 μm or more and 35 μm or less, 10 μm or more and 30 μm or less, 10 μm or more and 15 μm or less, 15 μm or more and 40 μm or less, 15 μm or more and 35 μm or less, 15 μm or more and 30 μm or less, 30 μm or more and 40 μm or less, 30 μm or more and 35 μm or less, or 35 μm or more and 40 μm or less.

[0154] The second main electrode 140B1 can be connected to the first main electrode 140A1 and the third main electrode 140C1 in the element second direction G2. The second main electrode 140B1 can not overlap the organic layer 130 when viewed in plan.

[0155] The second sub-electrode 140B2 can be connected to the first main electrode 140A1 or the third main electrode C1 in the element first direction G1. The second sub-electrode 140B2 can be connected to the first sub-electrode 140A2 and the third sub-electrode 140C2 in the element second direction G2. The second sub-electrode 140B2 can overlap the organic layer 130 when viewed in plan. For example, the second sub-electrode 140B2 can overlap the first organic layer 130A described later.

[0156] The second sub-electrode 140B2 can be arranged with the second main electrode 140B1 in the element third direction G3 or the element fourth direction G4. As a range of the interval between the second main electrode 140B1 and the second sub-electrode 140B2, the range of the interval G41 described above can be adopted.

[0157] The third main electrode 140C1 can be connected to the first main electrode 140A1 and the second main electrode 140B1 in the element second direction G2. The third main electrode 140C1 can not overlap the organic layer 130 when viewed in plan.

[0158] The third sub-electrode 140C2 can be connected to the first main electrode 140A1 or the second main electrode B1 in the element first direction G1. The third sub-electrode 140C2 can be connected to the first sub-electrode 140A2 and the second sub-electrode 140B2 in the element second direction G2. The third sub-electrode 140C2 can overlap the organic layer 130 when viewed in plan. For example, the third sub-electrode 140C2 can overlap the third organic layer 130C described later.

[0159] The third sub-electrode 140C2 can be arranged with the third main electrode 140C1 in the element third direction G3 or the element fourth direction G4. As a range of the interval between the third main electrode 140C1 and the third sub-electrode 140C2, the range of the interval G41 described above can be adopted.

[0160] The first electrode segment 141A can include the first main electrode 140A1, the second main electrode 140B1, the third main electrode 140C1, the second sub-electrode 140B2, and the third sub-electrode 140C2. The second main electrode 140B1 can be located between the first main electrode 140A1 and the third main electrode 140C1 in the element second direction G2. The second main electrode 140B1 can be connected to the first main electrode 140A1 and the third main electrode 140C1 in the element second direction G2. The second sub-electrode 140B2 and the third sub-electrode 140C2 can be connected to the first main electrode 140A1 in the element first direction G1. The second sub-electrode 140B2 can be connected to the third sub-electrode 140C2 in the element second direction G2.

[0161] The second electrode segment 141B can include the first main electrode 140A1, the second main electrode 140B1, the first sub electrode 140A2, two second sub electrodes 140B2, and two third sub electrodes 140C2. The second main electrode 140B1 can be connected to the first main electrode 140A1 in the element second direction G2. The first second sub electrode 140B2 and the first third sub electrode 140C2 can be connected to the first main electrode 140A1 in the element first direction G1. The first second sub electrode 140B2 can be connected to the first third sub electrode 140C2 in the element second direction G2. The second third sub electrode 140C2 can be connected to the second main electrode 140B1 in the element second direction G2. The second second sub electrode 140B2 can be connected to the second third sub electrode 140C2 in the element second direction G2. The first sub electrode 140A2 can be connected to the second second sub electrode 140B2 in the element second direction G2.

[0162] In the first display region 101, the first main electrode 140A1, the second main electrode 140B1, and the third main electrode 140C1 can be repeatedly arranged along the element second direction G2. In the first display region 101, the third sub electrode 140C2, the second sub electrode 140B2, and the first sub electrode 140A2 can be repeatedly arranged along the element second direction G2. The columns of the first main electrode 140A1, the second main electrode 140B1, and the third main electrode 140C1, and the columns of the third sub electrode 140C2, the second sub electrode 140B2, and the first sub electrode 140A2 can be connected in the element first direction G1.

[0163] The two layers of the second electrode 140 can partially overlap. An area in which the multiple layers of the second electrode 140 overlap when viewed in plan view is also referred to as an electrode overlap region 148. In this embodiment, the electrode overlap region 148 includes an area in which the first layer 140A overlaps the second layer 140B, an area in which the first layer 140A overlaps the third layer 140C, or an area in which the second layer 140B overlaps the third layer 140C.

[0164] The area of the electrode overlapping region 148 can be smaller than the area of the first layer 140A. For example, the area of the electrode overlapping region 145 can be smaller than the area of the first main electrode 140A1. The ratio of the area of the electrode overlapping region 148 to the area of the first main electrode 140A1 may, for example, be 0.02 or more, 0.05 or more, or 0.10 or more. The ratio of the area of the electrode overlapping region 148 to the area of the first main electrode 140A1 may, for example, be 0.20 or less, 0.30 or less, or 0.40 or less. The range of the ratio of the area of the electrode overlapping region 148 to the area of the first main electrode 140A1 can be defined by the first group consisting of 0.02, 0.05, and 0.10 and / or the second group consisting of 0.20, 0.30, and 0.40. The range of the ratio of the area of the electrode overlapping region 148 to the area of the first main electrode 140A1 can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the ratio of the area of the electrode overlapping region 148 to the area of the first main electrode 140A1 can be defined by a combination of any two of the values included in the first group described above. The range of the ratio of the area of the electrode overlapping region 148 to the area of the first main electrode 140A1 can be defined by a combination of any two of the values included in the second group described above. For example, the ratio of the area of the electrode overlapping region 148 to the area of the first main electrode 140A1 may, for example, be 0.02 or more and 0.40 or less, 0.02 or more and 0.30 or less, 0.02 or more and 0.20 or less, 0.02 or more and 0.10 or less, 0.02 or more and 0.05 or less, 0.05 or more and 0.40 or less, 0.05 or more and 0.30 or less, 0.05 or more and 0.20 or less, 0.10 or more and 0.40 or less, 0.10 or more and 0.30 or less, 0.10 or more and 0.20 or less, 0.20 or more and 0.40 or less, 0.20 or more and 0.30 or less, or 0.30 or more and 0.40 or less.

[0165] The area of the electrode overlapping region 145 can be smaller than the area of the first sub electrode 140A2. As the range of the ratio of the area of the electrode overlapping region 145 to the area of the first sub electrode 140A2, the range of the "ratio of the area of the electrode overlapping region 148 to the area of the first main electrode 140A1" described above can be adopted.

[0166] The area of ​​the electrode overlap region 145 can be smaller than the area of ​​the second main electrode 140B1. The range of the ratio of the area of ​​the electrode overlap region 145 to the area of ​​the second main electrode 140B1 can be the range of the "ratio of the area of ​​the electrode overlap region 148 to the area of ​​the first main electrode 140A1" mentioned above.

[0167] The area of ​​the electrode overlap region 145 can be smaller than the area of ​​the second sub-electrode 140B2. The range of the ratio of the area of ​​the electrode overlap region 145 to the area of ​​the second sub-electrode 140B2 can be the range of the "ratio of the area of ​​the electrode overlap region 148 to the area of ​​the first main electrode 140A1" mentioned above.

[0168] The area of ​​the electrode overlap region 145 can be smaller than the area of ​​the third main electrode 140C1. The range of the ratio of the area of ​​the electrode overlap region 145 to the area of ​​the third main electrode 140C1 can be the range of the "ratio of the area of ​​the electrode overlap region 148 to the area of ​​the first main electrode 140A1" mentioned above.

[0169] The area of ​​the electrode overlap region 145 can be smaller than the area of ​​the third sub-electrode 140C2. The range of the ratio of the area of ​​the electrode overlap region 145 to the area of ​​the third sub-electrode 140C2 can be the range of the "ratio of the area of ​​the electrode overlap region 148 to the area of ​​the first main electrode 140A1" mentioned above.

[0170] Figure 7 It shows from Figure 6 The organic device 100 is shown in a top view excluding the state of the second electrode 140. The organic layer 130 may comprise a first organic layer 130A, a second organic layer 130B, and a third organic layer 130C. The first organic layer 130A, the second organic layer 130B, and the third organic layer 130C may, for example, be a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer. In the following description, the term "organic layer 130" will be used when describing the structure of the common organic layer of the first organic layer 130A, the second organic layer 130B, and the third organic layer 130C.

[0171] The configuration of the second electrode 140 and the organic layer 130 when viewed from above is inspected by observing the organic device 100 using a high-magnification digital microscope. Based on the inspection results, the aforementioned occupancy, area, size, spacing, etc., can be calculated. If the organic device 100 is equipped with a cover such as a glass cover, the cover can be removed by peeling or breaking it, and then the second electrode 140 and the organic layer 130 can be observed. Alternatively, a scanning electron microscope can be used instead of a digital microscope.

[0172] Next, an example of the layer structure of the organic device 100 will be described. Figure 8 yesFigure 6 A cross-sectional view of the organic device along line AA. Figure 9 yes Figure 6 A cross-sectional view of the organic device along line BB.

[0173] The organic device 100 includes a substrate 110 and an element 115 located on the substrate 110. The element 115 may have a first electrode 120, an organic layer 130 located on the first electrode 120, and a second electrode 140 located on the organic layer 130.

[0174] The organic device 100 may include an insulating layer 160 located between two adjacent first electrodes 120 when viewed from above. The insulating layer 160 may, for example, comprise polyimide. The insulating layer 160 may overlap with the ends of the first electrodes 120.

[0175] The insulating layer 160 can overlap with the electrode overlap region 148 when viewed from above. For example, when viewed from above, the electrode overlap region 148 can be surrounded by the outline of the insulating layer 160.

[0176] The electrode overlap region 148 comprises multiple layers of the second electrode 140. Therefore, the electrode overlap region 148 has a lower transmittance than a single layer of the second electrode 140. When light passing through the electrode overlap region 148 exits the organic device 100, uneven light intensity can sometimes occur. By overlapping the insulating layer 160 with the electrode overlap region 148, this uneven light intensity can be suppressed.

[0177] Organic device 100 can be an active matrix type. For example, although not shown, organic device 100 can include a switch. The switch is electrically connected to multiple elements 115 respectively. The switch is, for example, a transistor. The switch can control the on / off switching of voltage or current to the corresponding element 115.

[0178] The substrate 110 may be a plate-shaped component with insulating properties. The substrate 110 preferably has transparency that allows light to pass through.

[0179] When the substrate 110 has a specified transparency, the transparency of the substrate 110 is preferably such that light emitted from the organic layer 130 can be transmitted for display. For example, the transmittance of the substrate 110 in the visible light region is preferably 70% or more, more preferably 80% or more. The transmittance of the substrate 110 can be measured by the test method for the total transmittance of plastic-transparent materials according to JIS K7361-1.

[0180] The substrate 110 may or may not be flexible. The substrate 110 may be selected appropriately according to the application of the organic device 100.

[0181] The substrate 110 can be made of rigid materials that are not flexible, such as quartz glass, Pyrex glass, synthetic quartz sheets, or alkali-free glass, or flexible materials that are flexible, such as resin films, optical resin sheets, or thin glass. Furthermore, the substrate can be a laminate with barrier layers on one or both sides of the resin film.

[0182] The thickness of the substrate 110 can be appropriately selected based on the material used in the substrate 110 and the application of the organic device 100, for example, it can be 0.005 mm or more. Alternatively, the thickness of the substrate 110 can be 5 mm or less.

[0183] By applying a voltage between the first electrode 120 and the second electrode 140, or by flowing a current between the first electrode 120 and the second electrode 140, element 115 can perform certain functions. For example, if element 115 is a pixel of an organic EL display device, element 115 can emit light that constitutes an image.

[0184] The first electrode 120 comprises a conductive material. For example, the first electrode 120 comprises a metal, a conductive metal oxide, or other conductive inorganic materials. The first electrode 120 may comprise a transparent and conductive metal oxide such as indium tin oxide.

[0185] Materials constituting the first electrode 120 can include metals such as Au, Cr, Mo, Ag, and Mg; inorganic oxides such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide, and indium oxide; and conductive polymers such as metal-doped polythiophene. These conductive materials can be used individually or in combination. When using two or more materials, layers composed of each material can be stacked. Alternatively, alloys containing two or more materials can be used. For example, magnesium alloys such as MgAg can be used.

[0186] Organic layer 130 contains organic materials. When an electric current is applied to organic layer 130, organic layer 130 can perform certain functions. Applying an electric current means applying a voltage to organic layer 130 or allowing current to flow through organic layer 130. As organic layer 130, a light-emitting layer that emits light when an electric current is applied, or a layer that changes the transmittance or refractive index of light when an electric current is applied, etc., can be used. Organic layer 130 may contain organic semiconductor materials.

[0187] The layered structure including the first electrode 120, the first organic layer 130A, and the second electrode 140 is also referred to as a first element 115A. The layered structure including the first electrode 120, the second organic layer 130B, and the second electrode 140 is also referred to as a second element 115B. The layered structure including the first electrode 120, the third organic layer 130C, and the second electrode 140 is also referred to as a third element. In the case where the organic device 100 is an organic EL display device, the first element 115A, the second element 115B, and the third element are sub-pixels, respectively.

[0188] In the following description, in the case where the structure of an element common to the first element 115A, the second element 115B, and the third element is described, the term "element 115" and the reference numeral are used.

[0189] When a voltage is applied between the first electrode 120 and the second electrode 140, the organic layer 130 positioned therebetween is driven. In the case where the organic layer 130 is a light-emitting layer, light is emitted from the organic layer 130, and the light is taken out to the outside from the second electrode 140 side or the first electrode 120 side.

[0190] In the case where the organic layer 130 includes a light-emitting layer that emits light by passage of current, the organic layer 130 can further include a hole-injection layer, a hole-transport layer, an electron-transport layer, an electron-injection layer, and the like.

[0191] For example, in the case where the first electrode 120 is an anode, the organic layer 130 can have a hole-injection transport layer between the light-emitting layer and the first electrode 120. The hole-injection transport layer can be a hole-injection layer having a hole-injection function, or a hole-transport layer having a hole-transport function, or can have both the hole-injection function and the hole-transport function. In addition, the hole-injection transport layer can be a layer in which a hole-injection layer and a hole-transport layer are layered.

[0192] In the case where the second electrode 140 is a cathode, the organic layer 130 can have an electron-injection transport layer between the light-emitting layer and the second electrode 140. The electron-injection transport layer can be an electron-injection layer having an electron-injection function, or an electron-transport layer having an electron-transport function, or can have both the electron-injection function and the electron-transport function. In addition, the electron-injection transport layer can be a layer in which an electron-injection layer and an electron-transport layer are layered.

[0193] The light-emitting layer includes a light-emitting material. The light-emitting layer can contain an additive that gives good planarity.

[0194] As the light-emitting material, a known material can be used, and for example, a light-emitting material such as a pigment-based material, a metal complex-based material, a high molecular-based material, or the like can be used.

[0195] As the pigment-based material, for example, a cyclopentadiene derivative, a tetraphenylbutadiene derivative, a triphenylamine derivative, an oxadiazole derivative, a pyrazoloquinoline derivative, a diphenylstyrylbenzene derivative, a diphenylstyrylarylene derivative, a thiole derivative, a thiole ring compound, a pyridine ring compound, a perinone derivative, a perylene derivative, an oligothiophene derivative, an oxadiazole dimer, a pyrazoline dimer, or the like can be used.

[0196] As the metal complex-based material, for example, an aluminum quinolyl complex, a beryllium benzoquinolyl complex, a zinc benzoxazole complex, a zinc benzothiazole complex, a zinc azomethine complex, a zinc porphyrin complex, a eucalyptus complex, or the like, a metal complex having Al, Zn, Be, or the like or a rare earth metal such as Tb, Eu, Dy as a central metal and having an oxadiazole, a thiadiazole, a phenylpyridine, a phenylbenzimidazole, a quinoline structure, or the like as a ligand can be used.

[0197] As the polymer-based material, for example, a poly-p-phenylenevinylene derivative, a polythiophene derivative, a poly-p-phenylene derivative, a polysilane derivative, a polyacetylene derivative, a polyvinylcarbazole derivative, a polyfluorene derivative, a polyquinoxaline derivative, and a copolymer thereof, or the like can be used.

[0198] The light-emitting layer can contain a dopant for the purpose of improving the light-emitting efficiency, changing the light-emitting wavelength, or the like. As the dopant, for example, a perylene derivative, a coumarin derivative, a rubrene derivative, a quinacridone derivative, a squarylium derivative, a porphyrin derivative, a styryl colorant, a naphthacene derivative, a pyrazoline derivative, decacyclene, phenoxazone, a quinoxaline derivative, a carbazole derivative, a fluorene derivative, or the like can be used. In addition, as the dopant, an organic metal complex having a heavy metal ion such as platinum or iridium at the center and exhibiting phosphorescence can be used. As the dopant, one kind can be used alone, or two or more kinds can be used.

[0199] In addition, as the light-emitting material and the dopant, for example, the materials described in

[0094] to

[0099] of Japanese Patent Application Publication No. 2010-272891 or

[0053] to

[0057] of International Publication No. 2012 / 132126 can be used.

[0200] The film thickness of the light-emitting layer is not particularly limited as long as it is a film thickness that can provide a site at which recombination of an electron and a hole is performed and exhibits a light-emitting function, and for example, can be set to 1 nm or more, and can be set to 500 nm or less.

[0201] As the hole-injection-transporting material used for the hole-injection-transporting layer, a known material can be used. For example, a triazole derivative, an oxadiazole derivative, an imidazole derivative, a polyarylalkane derivative, a pyrazoline derivative, a pyrazoline ketone derivative, a phenylenediamine derivative, an arylamine derivative, an amino-substituted chalcone derivative, an oxazole derivative, a styrylanthracene derivative, a fluorenone derivative, a hydrazone derivative, a stilbene derivative, a silazane derivative, a polythiophene derivative, a polyaniline derivative, a polypyrrole derivative, an aniline derivative, an anthracene derivative, a carbazole derivative, a fluorene derivative, a diphenylstyrylbenzene derivative, a polyphenylacetylene derivative, a porphyrin derivative, a styrylamine derivative, or the like can be used. In addition, a spiro compound, a phthalocyanine compound, a metal oxide, or the like can be exemplified. In addition, for example, a compound described in Japanese Patent Application Publication No. 2011-119681, International Publication No. 2012 / 018082, Japanese Patent Application Publication No. 2012-069963, International Publication No. 2012 / 132126,

[0106] can be appropriately selected and used.

[0202] Also, in the case where the hole-injection-transporting layer is a hole-injection-transporting layer in which a hole-injection layer and a hole-transporting layer are stacked, the hole-injection layer can contain the additive A, the hole-transporting layer can contain the additive A, and the hole-injection layer and the hole-transporting layer can contain the additive A. The additive A can be a low-molecular compound or a high-molecular compound. Specifically, a fluorine-based compound, an ester-based compound, a hydrocarbon-based compound, or the like can be used.

[0203] As the electron-injection-transporting material used for the electron-injection-transporting layer, a known material can be used. For example, an alkali metal, an alloy of an alkali metal, a halide of an alkali metal, an alkali earth metal, a halide of an alkali earth metal, an oxide of an alkali earth metal, an organic complex of an alkali metal, a halide or an oxide of magnesium, an aluminum oxide, or the like can be used. In addition, as the electron-injection-transporting material, for example, a bathocuproin, a bathophenanthroline, a phenanthroline derivative, a triazole derivative, an oxadiazole derivative, a pyridine derivative, a nitro-substituted fluorene derivative, an anthraquinone dimethane derivative, a diphenylquinone derivative, a thiopyran dioxide derivative, an aromatic ring tetracarboxylic anhydride such as naphthalene or perylene, a carbodiimide, a fluorenylidene methane derivative, an anthraquinone dimethane derivative, an anthrone derivative, a quinoxaline derivative, a metal complex such as a hydroxyquinoline complex, a phthalocyanine compound, a diphenylstyrylpyrazine derivative, or the like can be used.

[0204] Alternatively, a metal-doped layer formed by doping alkali metal or alkaline earth metal in an organic material having electron-transporting property can be formed as the electron-injection / transport layer. As the organic material having electron-transporting property, metal complexes such as bathocuproin, red phenanthroline, phenanthroline derivatives, triazole derivatives, oxadiazole derivatives, pyridine derivatives, tris(8-hydroxyquinoline)aluminum (Alq3), and high molecular derivatives thereof can be used. As the metal to be doped, Li, Cs, Ba, Sr, and the like can be used.

[0205] The second electrode 140 includes a material having conductivity such as a metal. The second electrode 140 is formed on the organic layer 130 by an evaporation method using a mask to be described later. As the material constituting the second electrode 140, platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, chromium, carbon, and the like can be used. These materials can be used alone or two or more kinds of materials can be used in combination. In the case of using two or more kinds, layers composed of each material can be stacked. Alternatively, an alloy including two or more kinds of materials can be used. For example, a magnesium alloy such as MgAg, an aluminum alloy such as AlLi, AlCa, AlMg, an alloy of alkali metal and alkaline earth metal, and the like can be used.

[0206] The thickness of the second electrode 140 can be, for example, 5 nm or more, 10 nm or more, 50 nm or more, or 100 nm or more. The thickness of the second electrode 140 can be, for example, 200 nm or less, 500 nm or less, 1 μm or less, or 100 μm or less. The range of the thickness of the second electrode 140 can be defined by a first group consisting of 5 nm, 10 nm, 50 nm, and 100 nm and / or a second group consisting of 200 nm, 500 nm, 1 μm, and 100 μm. The range of the thickness of the second electrode 140 can be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the thickness of the second electrode 140 can be defined by a combination of any two of the values included in the first group. The range of the thickness of the second electrode 140 can be defined by a combination of any two of the values included in the second group. For example, the thickness of the second electrode 140 can be 5 nm or more and 100 μm or less, 5 nm or more and 1 μm or less, 5 nm or more and 500 nm or less, 5 nm or more and 200 nm or less, 5 nm or more and 100 nm or less, 5 nm or more and 50 nm or less, 5 nm or more and 10 nm or less, 10 nm or more and 100 μm or less, 10 nm or more and 1 μm or less, 10 nm or more and 500 nm or less, 10 nm or more and 200 nm or less, 10 nm or more and 100 nm or less, 50 nm or more and 100 μm or less, 50 nm or more and 1 μm or less, 50 nm or more and 500 nm or less, 50 nm or more and 200 nm or less, 50 nm or more and 100 nm or less, 100 nm or more and 100 μm or less, 100 nm or more and 1 μm or less, 100 nm or more and 500 nm or less, 100 nm or more and 200 nm or less, 200 nm or more and 100 μm or less, 200 nm or more and 1 μm or less, 200 nm or more and 500 nm or less, 500 nm or more and 100 μm or less, 500 nm or more and 1 μm or less, or 1 μm or more and 100 μm or less.

[0207] The smaller the thickness of the electrode 140, the higher the transmittance of the electrode 140 and the non-transmissive region 103. Light incident on the non-transmissive region 103 can also reach the sensor in accordance with the transmittance of the non-transmissive region 103. By increasing the transmittance of the non-transmissive region 103, the amount of light received by the sensor can be increased.

[0208] The thickness of the substrate 110, the thickness of the second electrode 140, and the thickness of each component of the organic device 100 can be measured by observing an image of a cross section of the organic device 100 using a scanning electron microscope.

[0209] Next, a method of forming the second electrode 140 of the above-described organic device 100 by an evaporation method will be described. Figure 10 is a view showing an evaporation apparatus 10. The evaporation apparatus 10 performs an evaporation process of evaporating an evaporation material onto an object.

[0210] The evaporation apparatus 10 can have an evaporation source 6, a heater 8, and a mask apparatus 40 inside thereof. The evaporation apparatus 10 can have an exhaust unit for making the inside of the evaporation apparatus 10 a vacuum atmosphere. The evaporation source 6 is, for example, a crucible. The evaporation source 6 houses an evaporation material 7 such as a conductive material. The heater 8 heats the evaporation source 6 to evaporate the evaporation material 7 in a vacuum atmosphere. The mask apparatus 40 is disposed in opposition to the crucible 6.

[0211] As shown in Figure 10 , the mask apparatus 40 can have at least one mask 50 and a frame 41 that supports the mask 50. The frame 41 can include a first frame surface 41a and a second frame surface 41b. The mask 50 can be fixed to the first frame surface 41a. The second frame surface 41b is located on the opposite side of the first frame surface 41a. In addition, the frame 41 can include an opening 42. The opening 42 penetrates from the first frame surface 41a to the second frame surface 41b. The mask 50 can be fixed to the frame 41 in a manner that it crosses the opening 42 when viewed from above. In addition, the frame 41 can support the mask 50 in a state that it is stretched in the surface direction thereof. Thus, the mask 50 can be inhibited from being deflected.

[0212] As the mask 50, the first mask 50A, the second mask 50B, or the third mask 50C described later can be used. In the following description, in the case of describing a mask structure common to the first mask 50A, the second mask 50B, and the third mask 50C, the term "mask 50" and the reference numeral are used. The same applies to the components of the mask such as the through hole, the shield region, and the like described later, and in the case of describing the content common to the first mask 50A, the second mask 50B, and the third mask 50C, the reference numeral without the letter such as "53", "54", and the like is used. On the other hand, in the case of describing the content peculiar to each of the first mask 50A, the second mask 50B, and the third mask 50C, the reference numeral with the corresponding letter such as "A", "B", "C", and the like attached after the number is sometimes used.

[0213] The mask 50 of the mask device 40 opposes the substrate 110. The substrate 110 is an object to which the evaporation material 7 is attached. The substrate 110 includes a first surface 111 and a second surface 112. The first surface 111 opposes the mask 50. The mask 50 includes a plurality of through holes 53. The through holes 53 allow the evaporation material 7 flying from the evaporation source 6 to pass therethrough. The evaporation material 7 that has passed through the through holes 53 is attached to the first surface 111 of the substrate 110. The mask 50 includes a first surface 51a and a second surface 51b. The first surface 51a opposes the first surface 111. The second surface 51b is located on the opposite side of the first surface 51a. The through holes 53 pass through from the first surface 51a to the second surface 51b.

[0214] The evaporation device 10 can include a substrate holder 2 that holds the substrate 110. The substrate holder 2 can be movable in the thickness direction of the substrate 110. The substrate holder 2 can be movable in the surface direction of the substrate 110. The substrate holder 2 can control the inclination of the substrate 110. For example, the substrate holder 2 can include a plurality of chucks mounted to the outer edge of the substrate 110. Each of the chucks can be independently movable in the thickness direction and the surface direction of the substrate 110.

[0215] The evaporation device 10 can include a mask holder 3 that holds the mask device 40. The mask holder 3 can be movable in the thickness direction of the mask 50. The mask holder 3 can be movable in the surface direction of the mask 50. For example, the mask holder 3 can include a plurality of chucks mounted to the outer edge of the frame 41. Each of the chucks can be independently movable in the thickness direction and the surface direction of the mask 50.

[0216] By moving at least either one of the substrate holder 2 and the mask holder 3, the position of the mask 50 of the mask device 40 with respect to the substrate 110 can be adjusted.

[0217] The evaporation device 10 can include a cooling plate 4. The cooling plate 4 can be disposed on the second surface 112 side of the substrate 110. The cooling plate 4 can have a flow path for circulating a refrigerant inside the cooling plate 4. The cooling plate 4 can suppress the temperature of the substrate 110 from rising during the evaporation process.

[0218] The evaporation device 10 can include a magnet 5 disposed on the side of the second surface 112. The magnet 5 can overlap the cooling plate 4. The magnet 5 can attract the mask 50 toward the substrate 110 by magnetic force. Thus, the gap between the mask 50 and the substrate 110 can be reduced or eliminated. Thus, the generation of a shadow in the evaporation process can be suppressed. Therefore, the dimensional accuracy and the positional accuracy of the second electrode 140 can be improved. In the present application, the shadow refers to a phenomenon in which the evaporation material 7 enters the gap between the mask 50 and the substrate 110, thereby making the thickness of the second electrode 140 uneven. In addition, the mask 50 can be attracted toward the substrate 110 by an electrostatic chuck using electrostatic force.

[0219] Next, the mask device 40 will be described. Figure 11 is a plan view illustrating the mask device 40. The mask device 40 can include two or more masks 50. The mask 50 can be fixed to the frame 41, for example, by welding.

[0220] The frame 41 includes a pair of first edges 411 and a pair of second edges 412. The frame 41 can have a rectangular profile. The mask 50 in a state in which tension is applied can be fixed to the first edge 411. The first edge 411 can be longer than the second edge 412. The frame 41 can include an opening 42 surrounded by the pair of first edges 411 and the pair of second edges 412.

[0221] The mask 50 includes at least one unit 52. The unit 52 includes a through-hole 53 and a shield region 54. The mask 50 can include two or more units 52. In the case where the mask 50 is used to manufacture a display device such as an organic EL display device, one unit 52 can correspond to one display region of one organic EL display device, that is, one screen. One unit 52 can also correspond to a plurality of display regions. The mask 50 can include the shield region 54 between the units 52. Although not illustrated, the mask 50 can include the through-hole 53 between the units 52.

[0222] Each unit 52 can have a profile that is substantially quadrangular in plan view, more precisely, a profile that is substantially rectangular in plan view. Each unit 52 can have various profiles according to the shape of the display region of the organic EL display device. For example, each unit 52 can have a circular profile.

[0223] Figure 12 is a plan view that is an enlarged representation of an example of the mask 50. The mask 50 has a mask first direction D1 and a mask second direction D2 that intersects the mask first direction D1. The mask first direction D1 can be orthogonal to the mask second direction D2. It can be that the mask first direction D1 corresponds to the element first direction G1 and the mask second direction D2 corresponds to the element second direction G2.

[0224] The mask 50 has through-holes 53 and a shield region 54. The through-holes 53 are arranged in the mask first direction Dl and the mask second direction D2.

[0225] When the mask 50 is viewed in the normal direction of the first surface 51a, the mask 50 has a mask third region M3 and a mask fourth region M4. The mask third region M3 corresponds to the first display region 101 of the organic device 100. The mask fourth region M4 corresponds to the second display region 102 of the organic device 100.

[0226] In the mask third region M3, the through-holes 53 have a third opening ratio. The third opening ratio is calculated by dividing the sum of the areas of the through-holes 53 located in the mask third region M3 by the area of the mask third region M3. In the mask fourth region M4, the through-holes 53 have a fourth opening ratio. The fourth opening ratio is calculated by dividing the sum of the areas of the through-holes 53 located in the mask fourth region M4 by the area of the mask fourth region M4. The fourth opening ratio can be smaller than the third opening ratio.

[0227] The ratio of the fourth opening ratio to the third opening ratio can be, for example, 0.2 or more, 0.3 or more, or 0.4 or more. The ratio of the fourth opening ratio to the third opening ratio can be, for example, 0.6 or less, 0.7 or less, or 0.8 or less. The range of the ratio of the fourth opening ratio to the third opening ratio can be defined by a first group consisting of 0.2, 0.3, and 0.4 and / or a second group consisting of 0.6, 0.7, and 0.8. The range of the ratio of the fourth opening ratio to the third opening ratio can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the ratio of the fourth opening ratio to the third opening ratio can be defined by a combination of any two of the values included in the first group described above. The range of the ratio of the fourth opening ratio to the third opening ratio can be defined by a combination of any two of the values included in the second group described above. For example, the ratio of the fourth opening ratio to the third opening ratio can be 0.2 or more and 0.8 or less, 0.2 or more and 0.7 or less, 0.2 or more and 0.6 or less, 0.2 or more and 0.4 or less, 0.2 or more and 0.3 or less, 0.3 or more and 0.8 or less, 0.3 or more and 0.7 or less, 0.3 or more and 0.6 or less, 0.3 or more and 0.4 or less, 0.4 or more and 0.8 or less, 0.4 or more and 0.7 or less, 0.4 or more and 0.6 or less, 0.6 or more and 0.8 or less, 0.6 or more and 0.7 or less, or 0.7 or more and 0.8 or less.

[0228] The mask 50 can have a calibration mark 50M. The calibration mark 50M is formed, for example, at a corner of the unit 52 of the mask 50. The calibration mark 50M can be used for alignment of the mask 50 with respect to the substrate 110 in a process of forming the second electrode 140 on the substrate 110 by the evaporation method using the mask 50. The calibration mark 50M can be formed, for example, at a position overlapping the frame 41. The calibration mark 50M can be used for alignment of the mask 50 with the frame 41 when the mask apparatus 40 is manufactured.

[0229] In the process of forming the second electrode 140, a plurality of masks 50 can be used. For example, as shown in FIG. 6, the mask 50 can include a first mask 50A, a second mask 50B, and a third mask 50C. The first mask 50A, the second mask 50B, and the third mask 50C can constitute different mask apparatuses 40. The mask apparatus 40 including the first mask 50A will be referred to as a first mask apparatus 40A. The mask apparatus 40 including the second mask 50B will be referred to as a second mask apparatus 40B. The mask apparatus 40 including the third mask 50C will be referred to as a third mask apparatus 40C. Figure 13

[0230] In the process of forming the second electrode 140, for example, the first layer 140A of the second electrode 140 is formed on the substrate 110 using the first mask apparatus 40A in the evaporation apparatus 10. Next, the second layer 140B of the second electrode 140 is formed on the substrate 110 using the second mask apparatus 40B in the evaporation apparatus 10. Next, the third layer 140C of the second electrode 140 is formed on the substrate 110 using the third mask apparatus 40C in the evaporation apparatus 10. In this way, in the process of forming the second electrode 140 of the organic device 100, a plurality of masks 50, such as the first mask 50A, the second mask 50B, and the third mask 50C, are used in order. The set of the plurality of masks 50 used for forming the second electrode 140 of the organic device 100 will be referred to as a mask set.

[0231] Figure 14 FIG. 7 is a diagram showing an example of a cross-sectional structure of the mask 50. The mask 50 has a plurality of through holes 53 formed in a metal plate 51. The through holes 53 pass through the metal plate 51 from a first face 51a to a second face 51b.

[0232] The through hole 53 can include a first recess 531 and a second recess 532. The first recess 531 is located on the first face 51a side. The second recess 532 is located on the second face 51b side. The first recess 531 is connected to the second recess 532 in the thickness direction of the metal plate 51.

[0233] ​The size r2 of the second recess 532 can be larger than the size r1 of the first recess 531 in plan view. The first recess 531 can be formed by processing the metal plate 51 from the first face 51a side using etching or the like. The second recess 532 can be formed by processing the metal plate 51 from the second face 51b side using etching or the like. The first recess 531 and the second recess 532 are connected at the connection portion 533.

[0234] Reference numeral 534 denotes a through portion. The opening area of the through hole 53 in plan view is smallest in the through portion 534. The through portion 534 can be demarcated by the connection portion 533.

[0235] In the evaporation method using the mask 50, the evaporation material 7 that has passed through the through portion 534 of the through hole 53 from the second face 51b side to the first face 51a side is attached to the substrate 110, whereby the above-described first layer 140A, the second layer 140B, the third layer 140C, and the like are formed on the substrate 110. The profile of the layers formed on the substrate 110 in the in-plane direction of the substrate 110 is determined by the profile of the through portion 534 in plan view. In the cross-sectional view of the through hole 53 described later, the profile of the through hole 53 is the profile of the through portion 534. Figure 15-21 The profile of the through hole 53 shown in the plan view is the profile of the through portion 534. The area of the through hole 53 can be the area of the through portion 534. The size of the through hole 53 in plan view can be the size r of the through portion 534.

[0236] The region of the metal plate 51 other than the through portion 534 is capable of shielding the evaporation material 7 toward the substrate 110. The region of the metal plate 51 other than the through portion 534 is also referred to as a shielding region 54. In the plan view of the mask 50, Figure 12 、 Figure 13 、 Figure 15 、 Figure 17 、 Figure 18 In the plan view of the mask 50, the shielding region 54 is shaded with diagonal lines.

[0237] The shielding region 54 of the mask fourth region M4 can include a recess that does not pass through the metal plate 51. By providing the recess in the mask fourth region M4, it is possible to reduce the rigidity of the mask fourth region M4. Thereby, it is possible to reduce the difference between the rigidity of the mask fourth region M4 and the rigidity of the mask third region M3. Therefore, it is possible to suppress the occurrence of wrinkles on the mask 50 due to the difference in rigidity. Wrinkles are likely to occur, for example, when tension is applied to the mask 50.

[0238] The thickness T of the mask 50 can be, for example, 5 μm or more, 10 μm or more, 15 μm or more, or 20 μm or more. The thickness T of the mask 50 can be, for example, 25 μm or less, 30 μm or less, 50 μm or less, or 100 μm or less. The thickness T of the mask 50 can be limited by a first group consisting of 5 μm, 10 μm, 15 μm, and 20 μm and / or a second group consisting of 25 μm, 30 μm, 50 μm, and 100 μm. The thickness T of the mask 50 can be limited by a combination of any one of the values included in the first group and any one of the values included in the second group. The thickness T of the mask 50 can be limited by a combination of any two of the values included in the first group. The thickness T of the mask 50 can be limited by a combination of any two of the values included in the second group. For example, the thickness T of the mask 50 can be 5 μm or more and 100 μm or less, 5 μm or more and 50 μm or less, 5 μm or more and 30 μm or less, 5 μm or more and 25 μm or less, 5 μm or more and 20 μm or less, 5 μm or more and 15 μm or less, 5 μm or more and 10 μm or less, 10 μm or more and 100 μm or less, 10 μm or more and 50 μm or less, 10 μm or more and 30 μm or less, 10 μm or more and 25 μm or less, 10 μm or more and 20 μm or less, 10 μm or more and 15 μm or less, 15 μm or more and 100 μm or less, 15 μm or more and 50 μm or less, 15 μm or more and 30 μm or less, 15 μm or more and 25 μm or less, 15 μm or more and 20 μm or less, 20 μm or more and 100 μm or less, 20 μm or more and 50 μm or less, 20 μm or more and 30 μm or less, 20 μm or more and 25 μm or less, 25 μm or more and 100 μm or less, 25 μm or more and 50 μm or less, 25 μm or more and 30 μm or less, 30 μm or more and 100 μm or less, 30 μm or more and 50 μm or less, or 50 μm or more and 100 μm or less.

[0239] As a method of measuring the thickness T of the mask 50, a contact type measurement method can be employed. As the contact type measurement method, "MT1271" of a length gauge HEIDENHAIM-METRO manufactured by HEIDENHAIM Co., Ltd. provided with a ball bushing guide type plunger can be used.

[0240] The cross-sectional shape of the through-hole 53 is not limited toFigure 14 The through-hole 53 can be formed by various methods other than etching. For example, the mask 50 can be formed by plating in a manner to produce the through-hole 53.

[0241] As a material constituting the mask 50, for example, a nickel-containing iron alloy can be used. The iron alloy can contain cobalt in addition to nickel. For example, as a material of the mask 50, an iron alloy in which the total content of nickel and cobalt is 30% by mass or more and 54% by mass or less and the content of cobalt is 0% by mass or more and 6% by mass or less can be used. As the iron alloy containing nickel or nickel and cobalt, an Invar alloy material containing 34% by mass or more and 38% by mass or less of nickel, a super Invar alloy material containing cobalt in addition to 30% by mass or more and 34% by mass or less of nickel, a low thermal expansion Fe-Ni-based plating alloy containing 38% by mass or more and 54% by mass or less of nickel, and the like can be listed. By using such an iron alloy, the thermal expansion coefficient of the mask 50 can be reduced. For example, in a case where a glass substrate is used as the substrate 110, the thermal expansion coefficient of the mask 50 can be set to a value as low as that of the glass substrate. Thereby, at the time of the vapor deposition process, it is possible to suppress a case where the dimensional accuracy or the positional accuracy of the vapor deposition layer formed on the substrate 110 is reduced due to the difference in the thermal expansion coefficient between the mask 50 and the substrate 110.

[0242] Next, the first mask 50A will be described in detail. Figure 15 is a plan view in which the mask third region M3 and the mask fourth region M4 of the first mask 50A are enlarged. The first mask 50A includes the first through-hole 53A and the first shield region 54A. The first through-holes 53A are arranged in the mask first direction D1 and the mask second direction D2.

[0243] In the mask third region M3, the first through-holes 53A can be arranged in the mask first direction D1 at a fifteenth pitch P15. In the mask fourth region M4, the first through-holes 53A can be arranged in the mask first direction D1 at a sixteenth pitch P16. The sixteenth pitch P16 can be greater than the fifteenth pitch P15.

[0244] The ratio of the 16th period P16 to the 15th period P15 may, for example, be 1.1 or more, 1.3 or more, or 1.5 or more. The ratio of the 16th period P16 to the 15th period P15 may, for example, be 2.0 or less, 3.0 or less, or 4.0 or less. The range of the ratio of the 16th period P16 to the 15th period P15 can be defined by a first group consisting of 1.1, 1.3, and 1.5 and / or a second group consisting of 2.0, 3.0, and 4.0. The range of the ratio of the 16th period P16 to the 15th period P15 can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the ratio of the 16th period P16 to the 15th period P15 can be defined by a combination of any two of the values included in the first group described above. The range of the ratio of the 16th period P16 to the 15th period P15 can be defined by a combination of any two of the values included in the second group described above. For example, the ratio of the 16th period P16 to the 15th period P15 can be 1.1 or more and 4.0 or less, 1.1 or more and 3.0 or less, 1.1 or more and 2.0 or less, 1.1 or more and 1.5 or less, 1.1 or more and 1.3 or less, 1.3 or more and 4.0 or less, 1.3 or more and 3.0 or less, 1.3 or more and 2.0 or less, 1.3 or more and 1.5 or less, 1.5 or more and 4.0 or less, 1.5 or more and 3.0 or less, 1.5 or more and 2.0 or less, 2.0 or more and 4.0 or less, 2.0 or more and 3.0 or less, or 3.0 or more and 4.0 or less.

[0245] The reference symbol G15 denotes a gap between two first through holes 53A located in the fourth mask region M4 and adjacent in the first mask direction D1. The gap G15 can be determined with reference to the 15th period P15 of the first through holes 53A located in the third mask region M3.

[0246] The ratio of the interval G15 to the 15th period P15 may be, for example, 0.3 or more, 0.5 or more, or 1.0 or more. The ratio of the interval G15 to the 15th period P15 may be, for example, 1.5 or less, 2.0 or less, or 3.0 or less. The range of the ratio of the interval G15 to the 15th period P15 can be defined by a first group consisting of 0.3, 0.5, and 1.0 and / or a second group consisting of 1.5, 2.0, and 3.0. The range of the ratio of the interval G15 to the 15th period P15 can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the ratio of the interval G15 to the 15th period P15 can be defined by a combination of any two of the values included in the first group described above. The range of the ratio of the interval G15 to the 15th period P15 can be defined by a combination of any two of the values included in the second group described above. For example, the ratio of the interval G15 to the 15th period P15 can be 0.3 or more and 3.0 or less, 0.3 or more and 2.0 or less, 0.3 or more and 1.5 or less, 0.3 or more and 1.0 or less, 0.3 or more and 0.5 or less, 0.5 or more and 3.0 or less, 0.5 or more and 2.0 or less, 0.5 or more and 1.5 or less, 0.5 or more and 1.0 or less, 1.0 or more and 3.0 or less, 1.0 or more and 2.0 or less, 1.0 or more and 1.5 or less, 1.5 or more and 3.0 or less, 1.5 or more and 2.0 or less, or 2.0 or more and 3.0 or less.

[0247] The interval G15 can be, for example, 10 μm or more, 50 μm or more, 100 μm or more, or 150 μm or more. The interval G15 can be, for example, less than 200 μm, less than 250 μm, or less than 300 μm. The range of the interval G15 can be defined by a first group consisting of 10 μm, 50 μm, 100 μm, and 150 μm and / or a second group consisting of 200 μm, 250 μm, and 300 μm. The range of the interval G15 can be defined by a combination of any one value from the first group and any one value from the second group. The range of the interval G15 can be defined by a combination of any two values ​​from the first group. The range of the interval G15 can be defined by a combination of any two values ​​from the second group. For example, the spacing G15 can be greater than 10 μm and less than 300 μm, greater than 10 μm and less than 250 μm, greater than 10 μm and less than 200 μm, greater than 10 μm and less than 150 μm, greater than 10 μm and less than 100 μm, greater than 10 μm and less than 50 μm, greater than 50 μm and less than 300 μm, greater than 50 μm and less than 250 μm, greater than 50 μm and less than 200 μm, greater than 50 μm and less than 150 μm, or greater than 50 μm and less than 150 μm. It can be below 100μm, or above 100μm and below 300μm, or above 100μm and below 250μm, or above 100μm and below 200μm, or above 100μm and below 150μm, or above 150μm and below 300μm, or above 150μm and below 250μm, or above 150μm and below 200μm, or above 200μm and below 300μm, or above 200μm and below 250μm, or above 250μm and below 300μm.

[0248] In the third region M3 of the mask, the first through hole 53A can be arranged along the second direction D2 of the mask with a period of 25 P25. In the fourth region M4 of the mask, the first through hole 53A can be arranged along the second direction D2 of the mask with a period of 26 P26. The 26th period P26 can be the same as or different from the 25th period P25.

[0249] The first through hole 53A located in the third region M3 of the mask may include a first main hole 53A1 and a first secondary hole 53A2. The area of ​​the first main hole 53A1 may be larger than or the same as the area of ​​the first secondary hole 53A2.

[0250] Figure 16is a plan view that enlarges the first through-hole 53A. The first sub-hole 53A2 can be arranged with the first main hole 53A1 in the mask third direction D3 or the mask fourth direction D4. For example, the first through-hole 53A can include the first main hole 53A1, the first sub-hole 53A2 arranged with the first main hole 53A1 in the mask third direction D3, and the first sub-hole 53A2 arranged with the first main hole 53A1 in the mask fourth direction D4.

[0251] The mask third direction D3 is a direction that intersects both the mask first direction D1 and the mask second direction D2. The angle that the mask third direction D3 makes with respect to the mask first direction D1 and the mask second direction D2 is, for example, 20° or more and 70° or less. The mask fourth direction D4 is a direction that intersects both the mask first direction D1 and the mask second direction D2. The angle that the mask fourth direction D4 makes with respect to the mask first direction D1 and the mask second direction D2 is, for example, 20° or more and 70° or less. The mask third direction D3 intersects the mask fourth direction D4. For example, the mask third direction D3 can be orthogonal to the mask fourth direction D4. It can be that the mask third direction D3 corresponds to the element third direction G3, and the mask fourth direction D4 corresponds to the element fourth direction G4.

[0252] The distance G45 between the first main hole 53A1 and the first sub-hole 53A2 in the mask third direction D3 or the mask fourth direction D4 is indicated by a reference symbol G45. The distance G45 can be, for example, 5 μm or more, 10 μm or more, or 15 μm or more. The distance G45 can be, for example, 30 μm or less, 35 μm or less, or 40 μm or less. The distance G45 can be defined by a first group consisting of 5 μm, 10 μm, and 15 μm and / or a second group consisting of 30 μm, 35 μm, and 40 μm. The distance G45 can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The distance G45 can be defined by a combination of any two of the values included in the first group described above. The distance G45 can be defined by a combination of any two of the values included in the second group described above. For example, the distance G45 can be 5 μm or more and 40 μm or less, 5 μm or more and 35 μm or less, 5 μm or more and 30 μm or less, 5 μm or more and 15 μm or less, 5 μm or more and 10 μm or less, 10 μm or more and 40 μm or less, 10 μm or more and 35 μm or less, 10 μm or more and 30 μm or less, 10 μm or more and 15 μm or less, 15 μm or more and 40 μm or less, 15 μm or more and 35 μm or less, 15 μm or more and 30 μm or less, 30 μm or more and 40 μm or less, 30 μm or more and 35 μm or less, or 35 μm or more and 40 μm or less.

[0253] The first through-hole 53A located in the mask fourth region M4 can have a different shape from the first through-hole 53A located in the mask third region M3. For example, the first through-hole 53A located in the mask fourth region M4 can include a first type through-hole 53AA or a second type through-hole 53AB. The first type through-hole 53AA includes at least either one of the first main hole 53A1 and the first sub-hole 53A2. The second type through-hole 53AB also includes at least either one of the first main hole 53A1 and the first sub-hole 53A2.

[0254] The number of the first main holes 53A1 of the first type through holes 53AA is different from the number of the first main holes 53A1 of the second type through holes 53AB. Alternatively, the number of the first sub holes 53A2 of the first type through holes 53AA is different from the number of the first sub holes 53A2 of the second type through holes 53AB. For example, the first type through holes 53AA include one first main hole 53A1. The first type through holes 53AA can not include the first sub holes 53A2. The second type through holes 53AB include one first main hole 53A1 and one first sub hole 53A2. One first sub hole 53A2 can be arranged with the first main hole 53A1 in the mask third direction D3 or the mask fourth direction D4.

[0255] The mask fourth region M4 can include at least two of the first hole arrangement 53A_1, the second hole arrangement 53A_2, and the third hole arrangement 53A_3. The first hole arrangement 53A_1 refers to a combination of the first type through holes 53AA and the second type through holes 53AB arranged in the mask first direction D1. The second hole arrangement 53A_2 refers to a combination of two first type through holes 53AA arranged in the mask first direction D1. The third hole arrangement 53A_3 refers to a combination of two second type through holes 53AB arranged in the mask first direction D1.

[0256] The mask fourth region M4 can include a fourth hole arrangement 53A_4 and a fifth hole arrangement 53A_5. The fourth hole arrangement 53A_4 refers to a combination of the first type through holes 53AA and the second type through holes 53AB arranged in the mask second direction D2. The fifth hole arrangement 53A_5 refers to a combination of two first type through holes 53AA arranged in the mask second direction D2. Although not shown, the mask fourth region M4 can include a sixth hole arrangement 53A_6. The sixth hole arrangement 53A_6 refers to a combination of two second type through holes 53AB arranged in the mask second direction D2.

[0257] Reference will now be made to Figure 17 The second mask 50B will be described. For portions of the second mask 50B that are similarly configured as the first mask 50A, repeated descriptions will sometimes be omitted.

[0258] The second mask 50B includes second through holes 53B and a second mask region 54B. The second through holes 53B are arranged in the mask first direction D1 and the mask second direction D2, similarly to the first through holes 53A.

[0259] The second through holes 53B located in the mask third region M3 can include second main holes 53B1 and second sub holes 53B2. The second main holes 53B1 can have an area that is larger than, or the same as, the area of the second sub holes 53B2.

[0260] The 2nd sub-hole 53B2 can be arranged with the 2nd main hole 53B1 in the mask third direction D3 or the mask fourth direction D4. For example, the 2nd through-hole 53B can include the 2nd main hole 53B1, the 2nd sub-hole 53B2 arranged with the 2nd main hole 53B1 in the mask third direction D3, and the 2nd sub-hole 53B2 arranged with the 2nd main hole 53B1 in the mask fourth direction D4.

[0261] As a range of the interval between the 2nd main hole 53B1 and the 2nd sub-hole 53B2 in the mask third direction D3 or the mask fourth direction D4, the above-described range of the interval G45 can be adopted.

[0262] The 2nd through-hole 53B located in the mask fourth region M4 can have a different shape from the 2nd through-hole 53B located in the mask third region M3. For example, the 2nd through-hole 53B located in the mask fourth region M4 can include the 1st type through-hole 53BA or the 2nd type through-hole 53BB. As in the case of the 1st mask 50A, the 1st type through-hole 53BA includes at least either one of the 2nd main hole 53B1 and the 2nd sub-hole 53B2. The 2nd type through-hole 53BB also includes at least either one of the 2nd main hole 53B1 and the 2nd sub-hole 53B2.

[0263] The number of the 2nd main holes 53B1 of the 1st type through-hole 53BA is different from the number of the 2nd main holes 53B1 of the 2nd type through-hole 53BB. Alternatively, the number of the 2nd sub-holes 53B2 of the 1st type through-hole 53BA is different from the number of the 2nd sub-holes 53B2 of the 2nd type through-hole 53BB. For example, the 1st type through-hole 53BA includes one 2nd main hole 53B1 and one 2nd sub-hole 53B2. One 2nd sub-hole 53B2 can be arranged with the 2nd main hole 53B1 in the mask third direction D3 or the mask fourth direction D4. The 2nd type through-hole 53BB includes one 2nd main hole 53B1 and two 2nd sub-holes 53B2. Two 2nd sub-holes 53B2 can be arranged with the 2nd main hole 53B1 in the mask third direction D3 and the mask fourth direction D4, respectively.

[0264] The mask fourth region M4 can include at least two of a hole first arrangement 53B_1, a hole second arrangement 53B_2, and a hole third arrangement 53B_3. The hole first arrangement 53B_1 refers to a combination of the 1st type through-hole 53BA and the 2nd type through-hole 53BB arranged in the mask first direction D1. The hole second arrangement 53B_2 refers to a combination of two 1st type through-holes 53BA arranged in the mask first direction D1. The hole third arrangement 53B_3 refers to a combination of two 2nd type through-holes 53BB arranged in the mask first direction D1.

[0265] The mask fourth region M4 can include a fourth arrangement 53B_4 of holes and a fifth arrangement 53B_5 of holes. The fourth arrangement 53B_4 of holes refers to a combination of the first type through holes 53BA and the second type through holes 53BB arranged in the mask second direction D2. The fifth arrangement 53B_5 of holes refers to a combination of two first type through holes 53BA arranged in the mask second direction D2. Although not illustrated, the mask fourth region M4 can include a sixth arrangement 53B_6 of holes. The sixth arrangement 53B_6 of holes refers to a combination of two second type through holes 53BB arranged in the mask second direction D2.

[0266] Referring to Figure 18 The third mask 50C will be described. For portions of the third mask 50C that are similarly configured as the first mask 50A, repeated descriptions will sometimes be omitted.

[0267] The third mask 50C includes third through holes 53C and a third masked region 54C. The third through holes 53C are arranged in the mask first direction D1 and the mask second direction D2, similarly to the first through holes 53A.

[0268] The third through holes 53C located in the mask third region M3 can include third primary holes 53C1 and third secondary holes 53C2. The third secondary holes 53C2 can be arranged in the mask third direction D3 or the mask fourth direction D4 from the third primary holes 53C1. For example, the third through holes 53C can include the third primary holes 53C1, third secondary holes 53C2 arranged in the mask third direction D3 from the third primary holes 53C1, and third secondary holes 53C2 arranged in the mask fourth direction D4 from the third primary holes 53C1.

[0269] As a range of intervals between the third primary holes 53C1 and the third secondary holes 53C2 in the mask third direction D3 or the mask fourth direction D4, the range of the interval G45 described above can be employed.

[0270] The third through holes 53C located in the mask fourth region M4 can have a different shape from the third through holes 53C located in the mask third region M3. For example, the third through holes 53C located in the mask fourth region M4 can include the first type through holes 53CA or the second type through holes 53CB. Similarly to the case of the first mask 50A, the first type through holes 53CA include at least either of the third primary holes 53C1 and the third secondary holes 53C2. The second type through holes 53CB also include at least either of the third primary holes 53C1 and the third secondary holes 53C2.

[0271] The number of the third main holes 53C1 of the first type through-hole 53CA is different from the number of the third main holes 53C1 of the second type through-hole 53CB. Alternatively, the number of the third sub-holes 53C2 of the first type through-hole 53CA is different from the number of the third sub-holes 53C2 of the second type through-hole 53CB. For example, the first type through-hole 53CA includes one third main hole 53C1 and one third sub-hole 53C2. One third sub-hole 53C2 can be arranged with the third main hole 53C1 in the mask third direction D3 or the mask fourth direction D4. The second type through-hole 53CB includes one third main hole 53C1 and two third sub-holes 53C2. The two third sub-holes 53C2 can be arranged with the third main hole 53C1 in the mask third direction D3 and the mask fourth direction D4, respectively.

[0272] The mask fourth region M4 can include at least two of the first hole arrangement 53C_1, the second hole arrangement 53C_2, and the third hole arrangement 53C_3. The first hole arrangement 53C_1 refers to a combination of the first type through-hole 53CA and the second type through-hole 53CB arranged in the mask first direction D1. The second hole arrangement 53C_2 refers to a combination of two first type through-holes 53CA arranged in the mask first direction D1. The third hole arrangement 53C_3 refers to a combination of two second type through-holes 53CB arranged in the mask first direction D1.

[0273] The mask fourth region M4 can include the fourth hole arrangement 53C_4 and the fifth hole arrangement 53C_5. The fourth hole arrangement 53C_4 refers to a combination of the first type through-hole 53CA and the second type through-hole 53CB arranged in the mask second direction D2. The fifth hole arrangement 53C_5 refers to a combination of two first type through-holes 53CA arranged in the mask second direction D2. Although not illustrated, the mask fourth region M4 can include the sixth hole arrangement 53C_6. The sixth hole arrangement 53C_6 refers to a combination of two second type through-holes 53CB arranged in the mask second direction D2.

[0274] In a method of measuring the shape and arrangement of the through-holes 53A to 53C of each mask 50A to 50C, parallel light is made to be incident on one of the first face 51a and the second face 51b in the normal direction of each mask. The parallel light is made to be emitted from the other of the first face 51a and the second face 51b. The shape of the region occupied by the emitted light is measured as the shape of the through-hole 53.

[0275] Next, the positional relationship of the first mask 50A, the second mask 50B, and the third mask 50C will be described. Figure 19 is a plan view illustrating a mask stack 55. The mask stack 55 has two or more masks 50 overlapped. Figure 19The mask stack 55 shown has overlapping first mask 50A, second mask 50B and third mask 50C.

[0276] In the mask stack 55, the calibration marks 50M of each mask 50A to 50C can coincide. Alternatively, the masks 50A to 50C can be overlapped based on the arrangement of the units 52 of each mask 50A to 50C. Alternatively, the masks 50A to 50C can be overlapped based on the arrangement of the through holes 53A to 53C and the shielding regions 54A to 54C of each mask 50A to 50C. When overlapping the masks 50A to 50C, tension may be applied to each mask 50A to 50C, or no tension may be applied.

[0277] Furthermore, for images showing the overlapping of two or more masks 50, this can be obtained by overlaying the image data of each mask 50. For example, firstly, image data relating to the contours of the through-holes 53A-53C of each mask 50A-50C is acquired using an imaging device. Then, the image data of each mask 50A-50C are overlaid using an image processing device. This allows for the production of... Figure 19 Such an image. When acquiring image data, tension can be applied to each mask 50A to 50C, or no tension can be applied. For images showing the state of overlapping two or more masks 50, it is also possible to obtain them by overlapping the design drawings used to manufacture each mask 50A to 50C.

[0278] like Figure 19 As shown, the mask stack 55 includes a through region 55A. When viewed from above, the through region 55A includes at least one of the through holes 53A to 53C of each mask 50A to 50C. That is, when viewed from above, the through region 55A overlaps with at least any one of the through holes 53A to 53C of each mask 50A to 50C. Therefore, in the vapor deposition process, at least one layer of the second electrode 140 is formed in the region of the substrate 110 corresponding to the through region 55A.

[0279] The through region 55A may include a hole overlap region 59. The hole overlap region 59 is the region where the through holes 53 of two or more masks 50 overlap when viewed from above. That is, the hole overlap region 59, when viewed from above, includes at least two of the through holes 53 of two or more masks 50 included in the mask stack 55. Figure 19 In the example shown, the hole overlap region 59, when viewed from above, includes: the region where the first through-hole 53A overlaps with the second through-hole 53B; the region where the first through-hole 53A overlaps with the third through-hole 53C; or the region where the second through-hole 53B overlaps with the third through-hole 53C. Therefore, in the vapor deposition process, at least two layers of the second electrode 140 are formed in the region of the substrate 110 corresponding to the hole overlap region 59.

[0280] When viewed from above, the mask layer stack 55 has a mask first region M1 and a mask second region M2. The mask first region M1 corresponds to the first display region 101 of the organic device 100. The mask second region M2 corresponds to the second display region 102 of the organic device 100.

[0281] In the mask first region M1, the through regions 55A have a first aperture ratio. The first aperture ratio is calculated by dividing the sum of the areas of the through regions 55A located in the mask first region M1 by the area of the mask first region M1. In the mask second region M2, the through regions 55A have a second aperture ratio. The second aperture ratio is calculated by dividing the sum of the areas of the through regions 55A located in the mask second region M2 by the area of the mask second region M2. The second aperture ratio can be smaller than the first aperture ratio.

[0282] The ratio of the second aperture ratio to the first aperture ratio can be, for example, 0.2 or more, 0.3 or more, or 0.4 or more. The ratio of the second aperture ratio to the first aperture ratio can be, for example, 0.6 or less, 0.7 or less, or 0.8 or less. The range of the ratio of the second aperture ratio to the first aperture ratio can be defined by a first group consisting of 0.2, 0.3, and 0.4 and / or a second group consisting of 0.6, 0.7, and 0.8. The range of the ratio of the second aperture ratio to the first aperture ratio can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the ratio of the second aperture ratio to the first aperture ratio can be defined by a combination of any two of the values included in the first group described above. The range of the ratio of the second aperture ratio to the first aperture ratio can be defined by a combination of any two of the values included in the second group described above. For example, the ratio of the second aperture ratio to the first aperture ratio can be 0.2 or more and 0.8 or less, 0.2 or more and 0.7 or less, 0.2 or more and 0.6 or less, 0.2 or more and 0.4 or less, 0.2 or more and 0.3 or less, 0.3 or more and 0.8 or less, 0.3 or more and 0.7 or less, 0.3 or more and 0.6 or less, 0.3 or more and 0.4 or less, 0.4 or more and 0.8 or less, 0.4 or more and 0.7 or less, 0.4 or more and 0.6 or less, 0.6 or more and 0.8 or less, 0.6 or more and 0.7 or less, or 0.7 or more and 0.8 or less.

[0283] The area of the hole overlapping region 59 can be smaller than the area of the first through-hole 53A. For example, the area of the hole overlapping region 59 can be smaller than the area of the first main hole 53A1. The ratio of the area of the hole overlapping region 59 to the area of the first main hole 53A1 may, for example, be 0.02 or more, 0.05 or more, or 0.10 or more. The ratio of the area of the hole overlapping region 59 to the area of the first main hole 53A1 may, for example, be 0.20 or less, 0.30 or less, or 0.40 or less. The range of the ratio of the area of the hole overlapping region 59 to the area of the first main hole 53A1 can be defined by a first group consisting of 0.02, 0.05, and 0.10 and / or a second group consisting of 0.20, 0.30, and 0.40. The range of the ratio of the area of the hole overlapping region 59 to the area of the first main hole 53A1 can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the ratio of the area of the hole overlapping region 59 to the area of the first main hole 53A1 can be defined by a combination of any two of the values included in the first group described above. The range of the ratio of the area of the hole overlapping region 59 to the area of the first main hole 53A1 can be defined by a combination of any two of the values included in the second group described above. For example, the ratio of the area of the hole overlapping region 59 to the area of the first main hole 53A1 may, for example, be 0.02 or more and 0.40 or less, 0.02 or more and 0.30 or less, 0.02 or more and 0.20 or less, 0.02 or more and 0.10 or less, 0.02 or more and 0.05 or less, 0.05 or more and 0.40 or less, 0.05 or more and 0.30 or less, 0.05 or more and 0.20 or less, 0.05 or more and 0.10 or less, 0.10 or more and 0.40 or less, 0.10 or more and 0.30 or less, 0.10 or more and 0.20 or less, 0.20 or more and 0.40 or less, 0.20 or more and 0.30 or less, or 0.30 or more and 0.40 or less.

[0284] The area of the hole overlapping region 59 can be smaller than the area of the first sub-hole 53A2. As the range of the ratio of the area of the hole overlapping region 59 to the area of the first sub-hole 53A2, the range of the "ratio of the area of the hole overlapping region 59 to the area of the first main hole 53A1" described above can be adopted.

[0285] The area of the hole overlapping region 59 can be smaller than the area of the second main hole 53B1. As the range of the ratio of the area of the hole overlapping region 59 to the area of the second main hole 53B1, the range of the "ratio of the area of the hole overlapping region 59 to the area of the first main hole 53A1" described above can be adopted.

[0286] The area of the hole overlap region 59 can be smaller than the area of the second sub-hole 53B2. As a range of the ratio of the area of the hole overlap region 59 to the area of the second sub-hole 53B2, the range of the ratio of the area of the hole overlap region 59 to the area of the first main hole 53A1 described above can be adopted.

[0287] The area of the hole overlap region 59 can be smaller than the area of the third main hole 53C1. As a range of the ratio of the area of the hole overlap region 59 to the area of the third main hole 53C1, the range of the ratio of the area of the hole overlap region 59 to the area of the first main hole 53A1 described above can be adopted.

[0288] The area of the hole overlap region 59 can be smaller than the area of the third sub-hole 53C2. As a range of the ratio of the area of the hole overlap region 59 to the area of the third sub-hole 53C2, the range of the ratio of the area of the hole overlap region 59 to the area of the first main hole 53A1 described above can be adopted.

[0289] As shown in FIG. 17, the through region 55A located in the mask second region M2 can include two or more through lines 55L arranged in the mask first direction D1. The through lines 55L can extend in the mask second direction D2. For example, the through lines 55L can include a third end and a fourth end connected to the through region 55A of the mask first region M1. The fourth end is located on the side opposite to the third end in the mask second direction D2. Figure 19 The reference sign G17 denotes an interval between two adjacent through lines 55L in the mask first direction D1. The reference sign W17 denotes a maximum value of the size of the through line 55L in the mask first direction D1. The interval G17 can be determined with the size W17 as a reference.

[0290]

[0291] ​The ratio of the interval G17 to the size W17 may be, for example, 0.2 or more, 0.4 or more, or 0.6 or more. The ratio of the interval G17 to the size W17 may be, for example, 1.0 or less, 2.0 or less, or 3.0 or less. The range of the ratio of the interval G17 to the size W17 can be defined by a first group consisting of 0.2, 0.4, and 0.6 and / or a second group consisting of 1.0, 2.0, and 3.0. The range of the ratio of the interval G17 to the size W17 can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the ratio of the interval G17 to the size W17 can be defined by a combination of any two of the values included in the first group described above. The range of the ratio of the interval G17 to the size W17 can be defined by a combination of any two of the values included in the second group described above. For example, the ratio of the interval G17 to the size W17 can be 0.2 or more and 3.0 or less, 0.2 or more and 2.0 or less, 0.2 or more and 1.0 or less, 0.2 or more and 0.6 or less, 0.2 or more and 0.4 or less, 0.4 or more and 3.0 or less, 0.4 or more and 2.0 or less, 0.4 or more and 1.0 or less, 0.4 or more and 0.6 or less, 0.6 or more and 3.0 or less, 0.6 or more and 2.0 or less, 0.6 or more and 1.0 or less, 1.0 or more and 3.0 or less, 1.0 or more and 2.0 or less, or 2.0 or more and 3.0 or less.

[0292] The interval G17 can be, for example, 10 μm or more, 50 μm or more, 100 μm or more, or 150 μm or more. The interval G17 can be, for example, less than 200 μm, less than 250 μm, or less than 300 μm. The range of the interval G17 can be defined by a first group consisting of 10 μm, 50 μm, 100 μm, and 150 μm and / or a second group consisting of 200 μm, 250 μm, and 300 μm. The range of the interval G17 can be defined by a combination of any one value from the first group and any one value from the second group. The range of the interval G17 can be defined by a combination of any two values ​​from the first group. The range of the interval G17 can be defined by a combination of any two values ​​from the second group. For example, the spacing G17 can be greater than 10 μm and less than 300 μm, greater than 10 μm and less than 250 μm, greater than 10 μm and less than 200 μm, greater than 10 μm and less than 150 μm, greater than 10 μm and less than 100 μm, greater than 10 μm and less than 50 μm, greater than 50 μm and less than 300 μm, greater than 50 μm and less than 250 μm, greater than 50 μm and less than 200 μm, greater than 50 μm and less than 150 μm, or greater than 50 μm and less than 150 μm. It can be below 100μm, or above 100μm and below 300μm, or above 100μm and below 250μm, or above 100μm and below 200μm, or above 100μm and below 150μm, or above 150μm and below 300μm, or above 150μm and below 250μm, or above 150μm and below 200μm, or above 200μm and below 300μm, or above 200μm and below 250μm, or above 250μm and below 300μm.

[0293] Preferably, the spacing G17 is not constant. For example, the spacing G17 can vary depending on the position in the first direction D1 or the second direction D2 of the mask. Thus, the spacing G11 between the two electrode lines 140L of the organic device 100 can vary depending on the position.

[0294] like Figure 19 As shown, the through line 55L may include two or more through segments 56 arranged in the second direction D2 of the mask. The through segments 56 may overlap with the organic layer 130 during the vapor deposition process. For example, one through segment 56 may overlap with one organic layer 130. Two adjacent through segments 56 in the second direction D2 of the mask may be connected to each other.

[0295] The through section 56 can include a first through section 56A and a second through section 56B. The first through section 56A can have a first shape. The second through section 56B can have a second shape different from the first shape. That is, the shape of the second through section 56B can be different from the shape of the first through section 56A. Since the through section 56 includes the first through section 56A and the second through section 56B having mutually different shapes, it is possible to suppress a case where the interval G17 becomes constant regardless of the position. The shape of the through section 56 is also referred to as a through shape.

[0296] The through section 56 can include a mask first connection 562A and a mask second connection 562B. The mask first connection 562A refers to a combination of the first through section 56A and the second through section 56B connected in the mask second direction D2. The mask second connection 562B refers to a combination of two first through sections 56A connected in the mask second direction D2.

[0297] The through section 56 can include a mask first arrangement 561A and a mask second arrangement 561B. The mask first arrangement 561A refers to a combination of the first through section 56A and the second through section 56B arranged in the mask first direction D1. The mask second 561B refers to a combination of two first through sections 56A arranged in the mask first direction D1.

[0298] The through section 56 can include the mask first arrangement 561A, the mask second arrangement 561B, and a mask third arrangement 561C. The mask third arrangement 561C refers to a combination of two second through sections 56B arranged in the mask first direction D1.

[0299] The first through section 56A and the second through section 56B can be configured in a manner in which the interval G17 irregularly changes. For example, the first through section 56A and the second through section 56B can be configured based on a Fibonacci sequence.

[0300] The specific difference between the first through shape and the second through shape is arbitrary. For example, the area of the second through shape can be different from the area of the first through shape. For example, the size of the second through shape in the mask first direction D1 or the mask second direction D2 can be different from the size of the first through shape in the mask first direction D1 or the mask second direction D2. For example, the position of the end portion of the second through shape in the mask first direction D1 or the mask second direction D2 can be different from the position of the end portion of the first through shape in the mask first direction D1 or the mask second direction D2.

[0301] Reference is made to Figure 20 and Figure 21 Specific examples of the shape of the first through section 56A and the shape of the second through section 56B are described. Figure 20is a plan view showing an example of the first through section 56A. Figure 21 is a plan view showing an example of the second through section 56B. The first electrode portion 141A can be formed using the evaporation material that has passed through the first through section 56A. Figure 4 The second electrode portion 141B can be formed using the evaporation material that has passed through the second through section 56B. Figure 5

[0302] As shown in Figure 20 , the first through section 56A can include a first main section 57A and a first sub-section 58A. The first main section 57A can overlap the organic layer 130 when viewed in plan during the evaporation process. The first sub-section 58A can be connected to the first main section 57A. The first sub-section 58A can include a fifth connection end 58A1 and a sixth connection end 58A2. The fifth connection end 58A1 is connected to the first main section 57A. The sixth connection end 58A2 is located on the side opposite to the fifth connection end 58A1 in the mask second direction D2.

[0303] As shown in Figure 21 , the second through section 56B can include a second main section 57B and a second sub-section 58B. The second main section 57B can overlap the organic layer 130 when viewed in plan during the evaporation process. The second sub-section 58B can be connected to the second main section 57B. The second sub-section 58B can include a seventh connection end 58B1 and an eighth connection end 58B2. The seventh connection end 58B1 is connected to the second main section 57B. The eighth connection end 58B2 is located on the side opposite to the seventh connection end 58B1 in the mask second direction D2.

[0304] The shape of the first sub-section 58A can be different from the shape of the second sub-section 58B.

[0305] For example, the area of the first sub-section 58A can be different from the area of the second sub-section 58B. In the example shown in Figure 20 and Figure 21 , the area of the first sub-section 58A is smaller than the area of the second sub-section 58B.

[0306] For example, the average of the dimension W4A of the first sub-section 58A in the mask first direction D1 can be different from the average of the dimension W4B of the second connection section 143B in the mask first direction D1. In the example shown in Figure 20 and Figure 21 , the average of the dimension W4A is smaller than the average of the dimension W4B.

[0307] For example, the position of the sixth connection end 58A2 in the mask first direction D1 can be different from the position of the eighth connection end 58B2 in the mask first direction D1. The “position” can refer to the relative position with respect to the organic layer 130 that overlaps the through section 56 during the evaporation process. In​Figure 20 In the example shown, the position of the fifth connection end 58A1 on the first direction D1 of the mask is the same as the position of the sixth connection end 58A2 on the first direction D1 of the mask. Figure 21 In the example shown, the position of the 7th connection end 58B1 on the first direction D1 of the mask is different from the position of the 8th connection end 58B2 on the first direction D1 of the mask. Figure 20 and Figure 21 As shown, the position of the 5th connecting end 58A1 in the first direction D1 of the mask is the same as the position of the 7th connecting end 58B1 in the first direction D1 of the mask. On the other hand, the position of the 6th connecting end 58A2 in the first direction D1 of the mask is different from the position of the 8th connecting end 58B2 in the first direction D1 of the mask. "Same position" means that the difference between the positions of the midpoints of the two connecting ends in the first direction D1 of the mask is less than or equal to the dimension W17 / 4. "Different position" means that the difference between the positions of the midpoints of the two connecting ends in the first direction D1 of the mask is greater than or equal to the dimension W17 / 4.

[0308] The average of the size W4A of the 1st sub-section 58A in the mask 1st direction D1 can be smaller than the average of the size W3A of the 1st main-section 57A in the mask 1st direction D1. The ratio of the average of the size W4A to the average of the size W3A can be, for example, 0.1 or more, 0.2 or more, or 0.3 or more. The ratio of the average of the size W4A to the average of the size W3A can be, for example, 0.7 or less, 0.8 or less, or 0.9 or less. The ratio of the average of the size W4A to the average of the size W3A can be in a range defined by a 1st group consisting of 0.1, 0.2, and 0.3 and / or a 2nd group consisting of 0.7, 0.8, and 0.9. The ratio of the average of the size W4A to the average of the size W3A can be in a range defined by a combination of any one of the values included in the 1st group described above and any one of the values included in the 2nd group described above. The ratio of the average of the size W4A to the average of the size W3A can be in a range defined by a combination of any two of the values included in the 1st group described above. The ratio of the average of the size W4A to the average of the size W3A can be in a range defined by a combination of any two of the values included in the 2nd group described above. For example, the ratio of the average of the size W4A to the average of the size W3A can be 0.1 or more and 0.9 or less, 0.1 or more and 0.8 or less, 0.1 or more and 0.7 or less, 0.1 or more and 0.3 or less, 0.1 or more and 0.2 or less, 0.2 or more and 0.9 or less, 0.2 or more and 0.8 or less, 0.2 or more and 0.7 or less, 0.3 or more and 0.9 or less, 0.3 or more and 0.8 or less, 0.3 or more and 0.7 or less, 0.7 or more and 0.9 or less, 0.7 or more and 0.8 or less, or 0.8 or more and 0.9 or less.

[0309] The size L4A of the first sub-section 58A in the mask second direction D2 can be determined in accordance with the size L3A of the first main-section 57A in the mask second direction D2. The ratio of the size L4A to the size L3A can be, for example, 0.2 or more, 0.6 or more, or 0.9 or more. The ratio of the size L4A to the size L3A can be, for example, 2.0 or less, 2.5 or less, or 3.0 or less. The range of the ratio of the size L4A to the size L3A can be defined by the first group consisting of 0.2, 0.6, and 0.9 and / or the second group consisting of 2.0, 2.5, and 3.0. The range of the ratio of the size L4A to the size L3A can be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the ratio of the size L4A to the size L3A can be defined by a combination of any two of the values included in the first group described above. The range of the ratio of the size L4A to the size L3A can be defined by a combination of any two of the values included in the second group described above. For example, the ratio of the size L4A to the size L3A can be 0.2 or more and 3.0 or less, 0.2 or more and 2.5 or less, 0.2 or more and 2.0 or less, 0.2 or more and 0.9 or less, 0.2 or more and 0.6 or less, 0.6 or more and 3.0 or less, 0.6 or more and 2.5 or less, 0.6 or more and 2.0 or less, 0.6 or more and 0.9 or less, 0.9 or more and 3.0 or less, 0.9 or more and 2.5 or less, 0.9 or more and 2.0 or less, 2.0 or more and 3.0 or less, 2.0 or more and 2.5 or less, 2.5 or more and 3.0 or less. The ratio is, for example, the ratio of the maximum value of the size L4A to the maximum value of the size L3A.

[0310] The average value of the size W4B of the second sub-section 58B in the mask first direction D1 can be smaller than the average value of the size W3B of the second main-section 57B in the mask first direction D1. As the range of the ratio of the average value of the size W4B to the average value of the size W3B, the range of the ratio of the average value of the size W4A to the average value of the size W3A described above can be adopted.

[0311] The size L4B of the second sub-section 58B in the mask second direction D2 can be determined in accordance with the size L3B of the second main-section 57B in the mask second direction D2. As the range of the ratio of the size L4B to the size L3B, the range of the ratio of the size L4A to the size L3A described above can be adopted.

[0312] As Figure 20As shown, the first through-hole section 56A can include the first main hole 53A1, the second main hole 53B1, the third main hole 53C1, the second sub-hole 53B2, and the third sub-hole 53C2. The second main hole 53B1 is located between the first main hole 53A1 and the third main hole 53C1 in the mask second direction D2. The second main hole 53B1 can be connected to the first main hole 53A1 and the third main hole 53C1 in the mask second direction D2. The second sub-hole 53B2 and the third sub-hole 53C2 can be connected to the first main hole 53A1 in the mask first direction D1. The second sub-hole 53B2 can be connected to the third sub-hole 53C2 in the mask second direction D2.

[0313] The second through-hole section 56B can include the first main hole 53A1, the second main hole 53B1, the first sub-hole 53A2, two second sub-holes 53B2, and two third sub-holes 53C2. The second main hole 53B1 can be connected to the first main hole 53A1 in the mask second direction D2. The first second sub-hole 53B2 and the first third sub-hole 53C2 can be connected to the first main hole 53A1 in the mask first direction D1. The first second sub-hole 53B2 can be connected to the first third sub-hole 53C2 in the mask second direction D2. The second third sub-hole 53C2 can be connected to the second main hole 53B1 in the mask first direction D1. The second second sub-hole 53B2 can be connected to the second third sub-hole 53C2 in the mask second direction D2. The first sub-hole 53A2 can be connected to the second second sub-hole 53B2 in the mask second direction D2.

[0314] In the mask first region M1, the first main hole 53A1, the second main hole 53B1, and the third main hole 53C1 can be arranged repeatedly along the mask second direction D2. In the first display region 101, the third sub-hole 53C2, the second sub-hole 53B2, and the first sub-hole 53A2 can be arranged repeatedly along the mask second direction D2. The columns of the first main hole 53A1, the second main hole 53B1, and the third main hole 53C1 can be connected to the columns of the third sub-hole 53C2, the second sub-hole 53B2, and the first sub-hole 53A2 in the mask first direction D1.

[0315] Next, an example of a method of manufacturing the organic device 100 will be described.

[0316] First, a substrate 110 on which the first electrode 120 is formed is prepared. The first electrode 120 is formed, for example, by forming a conductive layer constituting the first electrode 120 on the substrate 110 by a sputtering method or the like, and then patterning the conductive layer by a photolithography method or the like. The insulating layer 160 located between two adjacent first electrodes 120 in plan view can be formed on the substrate 110.

[0317] Next, as shown in FIG. 6, the first electrode 120 is formed on the substrate 110. Figure 7As shown, the organic layer 130 including the first organic layer 130A, the second organic layer 130B, and the third organic layer 130C is formed on the first electrode 120. The first organic layer 130A can be formed, for example, by an evaporation method using a mask having a through-hole corresponding to the first organic layer 130A. For example, by causing an organic material or the like to be evaporated onto the first electrode 120 corresponding to the first organic layer 130A via the mask, the first organic layer 130A can be formed. The second organic layer 130B can also be formed by an evaporation method using a mask having a through-hole corresponding to the second organic layer 130B. The third organic layer 130C can also be formed by an evaporation method using a mask having a through-hole corresponding to the third organic layer 130C.

[0318] Next, the second electrode forming process can be performed. In the second electrode forming process, the second electrode 140 is formed on the organic layer 130 using the mask set described above. First, a process of forming the first layer 140A of the second electrode 140 by an evaporation method using the first mask 50A can be performed. For example, a conductive material such as metal or the like is evaporated on the organic layer 130 or the like via the first mask 50A. Thereby, the first layer 140A can be formed. Next, a process of forming the second layer 140B of the second electrode 140 by an evaporation method using the second mask 50B can be performed. For example, a conductive material such as metal or the like is evaporated on the organic layer 130 or the like via the second mask 50B. Thereby, the second layer 140B can be formed. Next, a process of forming the third layer 140C of the second electrode 140 by an evaporation method using the third mask 50C can be performed. For example, a conductive material such as metal or the like is evaporated on the organic layer 130 or the like via the third mask 50C. Thereby, the third layer 140C can be formed. In this way, as shown, the second electrode 140 including the first layer 140A, the second layer 140B, and the third layer 140C can be formed. Figure 6

[0319] Further, the order in which the first layer 140A, the second layer 140B, and the third layer 140C are formed is not particularly limited. For example, the evaporation process can be performed in the order of the third layer 140C, the second layer 140B, and the first layer 140A.

[0320] Effects of the mode of the present disclosure are summarized.

[0321] In a case where the second display region 102 of the organic device 100 includes the transmissive region 104, light reaching the organic device 100 can pass through the transmissive region 104 to reach an optical member or the like on the back surface side of the substrate. Therefore, the second display region 102 can detect light and display an image. Therefore, a function of a sensor such as a camera or a fingerprint sensor can be implemented in the second display region 102.

[0322] ​In a case where the interval G11 between the two electrode lines 140L is not fixed, it is possible to suppress the light that has diffracted when passing through the transmission region 104 from mutually enhancing each other. Therefore, it is possible to suppress the diffracted light having a high intensity from being incident to the sensor. Thereby, for example, it is possible to suppress the image generated by the sensor from being blurred.

[0323] Figure 22 is a plan view that enlargedly illustrates an example of the second display region 102 in a reference manner. In Figure 22 In the example illustrated in FIG. 10, the interval G11 between the two electrode lines 140L is constant. In this case, the light that has diffracted when passing through the transmission region 104 sometimes mutually enhances in a specific direction. Therefore, there is a case where the image generated by the sensor provided to the second display region 102 becomes blurred.

[0324] On the contrary, according to the above-described Figure 3 In the example illustrated in FIG. 9, since the interval G11 is not fixed, it is possible to suppress the light that has diffracted when passing through the transmission region 104 from mutually enhancing each other. Therefore, it is possible to suppress the diffracted light having a high intensity from being incident to the sensor. Thereby, for example, it is possible to suppress the image generated by the sensor from being blurred.

[0325] In addition, various modifications can be made to the above-described one embodiment. Hereinafter, other embodiments will be described as needed with reference to the drawings. In the following description and the drawings used in the following description, for portions that can be configured identically to the above-described one embodiment, the same reference numerals are used as those used for the corresponding portions in the above-described one embodiment, and the repeated description is omitted. In addition, in a case where the effect obtained in the above-described one embodiment is obviously obtained also in other embodiments, the description thereof is sometimes omitted.

[0326] Figure 23 is a plan view that illustrates an example of the first electrode segment 141A. Figure 24 is a plan view that illustrates an example of the second electrode segment 141B. As Figure 23 and Figure 24 illustrated in FIGS. 7 and 8, the shape of the first pixel segment 142A can be different from the shape of the second pixel segment 142B.

[0327] For example, the area of the first pixel segment 142A can be different from the area of the second pixel segment 142B.

[0328] For example, the average value of the dimension W1A of the first pixel segment 142A in the element first direction G1 can be different from the average value of the dimension W1B of the second pixel segment 142B in the element first direction G1.

[0329] Figure 25 is a plan view that illustrates an example of the first through segment 56A. Figure 26is a plan view showing an example of the second through section 56B. The first electrode portion 141A can be formed using the deposition material that has passed through the first through section 56A. Figure 23 The second electrode portion 141B can be formed using the deposition material that has passed through the second through section 56B. Figure 24

[0330] Figure 25 Figure 26 As shown in FIG. 17, the shape of the first main section 57A can be different from the shape of the second main section 57B.

[0331] For example, the area of the first main section 57A can be different from the area of the second main section 57B.

[0332] For example, the average value of the dimension W3A of the first main section 57A in the mask first direction Dl can be different from the average value of the dimension W3B of the second main section 57B in the mask first direction Dl.

[0333] In the example shown in FIG. 17, the interval G11 between the two electrode lines 140L can also be made to vary depending on the position. Thus, the light diffracted when passing through the transmission region 104 can be suppressed from mutually reinforcing. Thus, the diffracted light having a high intensity can be suppressed from being incident on the sensor. As a result, for example, blurring of the image generated by the sensor can be suppressed. Figure 23-26

[0334] is a plan view showing an example of the electrode line 140L of the second display region 102. The electrode section 141 of the electrode line 140L can have three or more shapes. For example, the electrode section 141 can include a third electrode section 141C in addition to the first electrode section 141A and the second electrode section 141B. The shape of the third electrode section 141C is different from the shape of the first electrode section 141A and also different from the shape of the second electrode section 141B. In this case, the through section 56 can include a third through section in addition to the first through section 56A and the second through section 56B. The third through section corresponds to the third electrode section 141C. The third through section has a third through shape that is different from the first through shape and the second through shape. Figure 27 The electrode section 141 can have a fourth electrode section 141D. The shape of the fourth electrode section 141D is different from the shape of the first electrode section 141A, different from the shape of the second electrode section 141B, and also different from the shape of the third electrode section 141C. In this case, the through section 56 can include a fourth through section in addition to the first through section 56A, the second through section 56B, and the third through section. The fourth through section corresponds to the fourth electrode section 141D. The fourth through section has a fourth through shape that is different from the first through shape, the second through shape, and the third through shape.

[0335]

[0336] ​​​In Figure 27 In the example shown, the electrode segments 141 include a first electrode segment 141A to a sixteenth electrode segment 141P. The shapes of the first electrode segment 141A to the sixteenth electrode segment 141P can be different from each other.

[0337] Referring to Figure 28-31 An example in which the second electrode 140 is formed using two masks 50 will be described. Figure 28 is a plan view showing an example of the first mask 50A. Figure 29 is a plan view showing an example of the second mask 50B.

[0338] As Figure 28 shown, the mask third region M3 and the mask fourth region M4 of the first mask 50A can include two or more first through holes 53A arranged in the mask first direction D1. The first through holes 53A can extend in the mask second direction D2.

[0339] As Figure 29 shown, the mask third region M3 of the second mask 50B can include two or more second through holes 53B arranged in the mask first direction D1. The second through holes 53B can extend in the mask second direction D2. The mask fourth region M4 of the second mask 50B can not include the second through holes 53B.

[0340] Although not shown, in the mask layer stack 55 provided with the first mask 50A and the second mask 50B, the second through hole 53B can be positioned between two first through holes 53A arranged in the mask first direction D1. In the mask layer stack 55, the second through hole 53B can be connected with the two first through holes 53A.

[0341] Figure 30 is a plan view showing an example of the mask third region M3 and the mask fourth region M4 of the first mask 50A. In a case where the mask fourth region M4 of the second mask 50B does not include the second through hole 53B, the first through holes 53A of the mask fourth region M4 of the first mask 50A constitute through segments 56. The mask fourth region M4 can include two or more through segments 56 arranged in the mask second direction D2. For example, the mask fourth region M4 can include a first through segment 56A, a second through segment 56B, a third through segment 56C, and a fourth through segment 56D. Thereby, it is possible to make the width of the first through hole 53A in the mask first direction D1 vary depending on the position. The two through segments 56 arranged in the mask second direction D2 can be connected in the mask second direction D2. In the mask third region M3, the size of the first through hole 53A in the mask first direction D1 can be constant.

[0342] Figure 31is a plan view showing an example of the mask third region M3 and the mask fourth region M4 of the second mask 50B. The mask fourth region M4 can not include the second through-hole 53B. In the mask third region M3, the size of the first through-hole 53B in the mask second direction D1 can be constant.

[0343] By using the first mask 50A and the second mask 50B shown in Figure 28-31 to form the second electrode 140, it is possible to make the interval G11 between the two electrode lines 140L vary depending on the position. Therefore, it is possible to suppress the light diffracted when passing through the transmission region 104 from mutually enhancing. Therefore, it is possible to suppress the diffracted light having a high intensity from being incident to the sensor. Thereby, for example, it is possible to suppress the image generated by the sensor from blurring.

[0344] Referring to Figure 32-33 , an example in which the second electrode 140 is formed using two masks 50 will be described. Figure 32 is a plan view showing an example of the first mask 50A. Figure 33 is a plan view showing an example of the second mask 50B.

[0345] As shown in Figure 32 , the mask third region M3 of the first mask 50A can include a plurality of first through-holes 53A. The configuration of the first through-holes 53A can be a staggered configuration. For example, a line connecting the center points of the first through-holes 53A can be zigzag. As shown in Figure 33 , the mask third region M3 of the second mask 50B can include a plurality of second through-holes 53B. The configuration of the second through-holes 53B can be a staggered configuration as with the first through-holes 53A. For example, a line connecting the center points of the second through-holes 53B can be zigzag.

[0346] Although not shown, in the mask stack 55 provided with the first mask 50A and the second mask 50B, the second through-hole 53B of the mask third region M3 can be located between two first through-holes 53A arranged in the mask first direction D1. In addition, the second through-hole 53B of the mask third region M3 can be located between two first through-holes 53A arranged in the mask second direction D2. In the mask stack 55, one second through-hole 53B can be connected to four first through-holes 53A.

[0347] As shown in Figure 32 , the mask fourth region M4 of the first mask 50A can include two or more kinds of first through-holes 53A arranged in the mask second direction D2. Thereby, it is possible to make the width of the first through-hole 53A in the mask first direction D1 vary depending on the position. Likewise, as shown in Figure 33As shown, the mask fourth region M4 of the second mask 50B can include two or more second through holes 53B arranged in the mask second direction D2. Thereby, it is possible to make the width of the first through hole 53B in the mask second direction D1 vary depending on the position.

[0348] Although not shown, in the mask layer stack 55 provided with the first mask 50A and the second mask 50B, the second through hole 53B of the mask fourth region M4 can be located between two first through holes 53A arranged in the mask second direction D2. In the mask layer stack 55, the second through hole 53B can be connected with the two first through holes 53A.

[0349] Reference Signs List Figure 34-37 An example in which the second electrode 140 is formed using three masks 50 will be described. Figure 34 is a plan view showing an example of the first mask 50A. Figure 35 is a plan view showing an example of the second mask 50B. Figure 36 is a plan view showing an example of the third mask 50C. Figure 37 is a plan view showing an example of the second electrode 140. The second electrode 140 includes a first layer 140A, a second layer 140B, and a third layer 140C.

[0350] As shown, the mask fourth region M4 of the first mask 50A includes a plurality of first through holes 53A arranged irregularly in the mask second direction D2. As shown, Figure 34 As shown, the mask fourth region M4 of the second mask 50B includes a plurality of second through holes 53B arranged irregularly in the mask second direction D2. As shown, Figure 35 As shown, the mask fourth region M4 of the third mask 50C includes a plurality of third through holes 53C arranged irregularly in the mask second direction D2. Although not shown, in the mask layer stack 55 provided with the first mask 50A, the second mask 50B, and the third mask 50C, the first through hole 53A can be connected with the second through hole 53B in the mask second direction D2. In the mask layer stack 55, the first through hole 53A and the second through hole 53B can be connected with the third through hole 53C in the mask first direction D1. Figure 36

[0351] Figure 37 is a plan view showing an example of the second electrode 140. The second electrode 140 includes a first layer 140A, a second layer 140B, and a third layer 140C. The first layer 140A is formed by using the first mask 50A. Figure 34 The second layer 140B is formed by using the second mask 50B. Figure 35 The third layer 140C is formed by using the third mask 50C. Figure 36 ​​

[0352] As Figure 37 shown, the interval G11 irregularly changes depending on the position in the element first direction G1 or the element second direction G2. Thereby, it is possible to suppress mutual enhancement of light diffracted when passing through the transmission region 104.

[0353] Referring Figure 45 to Figure 46 , an example in which the electrode lines 140L are meandering is described.

[0354] Figure 45 is a plan view showing an example of the second electrode 140Y of the second display region 102. The second electrode 140Y includes two or more electrode lines 140L arranged in the element first direction G1. The electrode line 140L can include the first electrode segment 141A, the second electrode segment 141B, and the third electrode segment 141C.

[0355] The third electrode segment 141C can be located between the first electrode segment 141A and the second electrode segment 141B in the element second direction G2. The third electrode segment 141C can be connected to the first electrode segment 141A and the second electrode segment 141B. That is, the first electrode segment 141A and the second electrode segment 141B can be electrically connected via the third electrode segment 141C.

[0356] The third electrode segment 141C can be located between two first electrode segments 141A in the element second direction G2. The third electrode segment 141C can be connected to the two first electrode segments 141A. That is, the two first electrode segments 141A can be electrically connected via the third electrode segment 141C.

[0357] The third electrode segment 141C can be located between two second electrode segments 141B in the element second direction G2. The third electrode segment 141C can be connected to the two second electrode segments 141B. That is, the two second electrode segments 141B can be electrically connected via the third electrode segment 141C.

[0358] The first electrode segment 141A, the second electrode segment 141B, and the third electrode segment 141C can correspond to one element 115, respectively. One element 115 can include a first element 115A, a second element 115B, and a third element. The element 115 corresponding to the first electrode segment 141A and the element 115 corresponding to the second electrode segment 141B can overlap when viewed in the element second direction G2. A plurality of elements 115 corresponding to the third electrode segment 141C can overlap when viewed in the second direction G2. The element 115 corresponding to the third electrode segment 141C can not overlap with the element 115 corresponding to the first electrode segment 141A and the element 115 corresponding to the second electrode segment 141B when viewed in the second direction G2. For example, the electrode line 140L can constitute a plurality of elements 115 arranged in a staggered manner.

[0359] Figure 46 is a plan view illustrating one example of the first electrode segment 141A, the second electrode segment 141B, and the third electrode segment 141C. The first electrode segment 141A can include a first pixel segment 142A and a first connection segment 143A. The second electrode segment 141B can include a second pixel segment 142B and a second connection segment 143B. The third electrode segment 141C can include a third pixel segment 142C and a third connection segment 143C. The third connection segment 143C can be connected to the first connection segment 143A or the second connection segment 143B.

[0360] The first pixel segment 142A, the second pixel segment 142B, and the third pixel segment 142C can include a first layer 140A overlapping with one organic layer 130, a second layer 140B overlapping with one organic layer 130, and a third layer 140C overlapping with one organic layer 130, respectively. The first pixel segment 142A, the second pixel segment 142B, and the third pixel segment 142C can have the same shape.

[0361] The first pixel segment 142A and the second pixel segment 142B can overlap when viewed in the element second direction G2. A plurality of third pixel segments 142C can overlap when viewed in the second direction G2. The third pixel segment 142C can not overlap with the first pixel segment 142A and the second pixel segment 142B when viewed in the second direction G2.

[0362] The shape of the first connection segment 143A can be different from the shape of the second connection segment 143B or the shape of the third connection segment 143C. The shape of the second connection segment 143B can be the same as or different from the shape of the third connection segment 143C.

[0363] Reference Figure 47 and Figure 48 One example of the organic device 100 will be described.

[0364] Figure 47 is a plan view showing an example of the organic device 100. The element 115 located in the first display region 101 is also denoted as an element 115X. The element 115 located in the second display region 102 is also denoted as an element 115Y.

[0365] In the first display region 101, the organic layer of the element 115X can be arranged in the 11th period P11 along the element first direction G1. In the second display region 102, the organic layer of the element 115Y can be arranged in the 12th period P12 along the element first direction G1. The 12th period P12 can be the same as the 11th period P11. By making the 12th period P12 the same as the 11th period P11, it is possible to suppress a visual difference between the first display region 101 and the second display region 102.

[0366] In the first display region 101, the organic layer of the element 115X can be arranged in the 21st period P21 along the element second direction G2. In the second display region 102, the organic layer of the element 115Y can be arranged in the 22nd period P22 along the element second direction G2. The 22nd period P22 can be the same as the 21st period P21. By making the 22nd period P22 the same as the 21st period P21, it is possible to suppress a visual difference between the first display region 101 and the second display region 102.

[0367] Figure 48 is a plan view showing an example of the second display region 102 of the organic device 100. The area of the element 115Y of the second display region 102 can be smaller than the area of the element 115X of the first display region 101. For example, the area of the organic layer of the element 115Y of the second display region 102 can be smaller than the area of the organic layer of the element 115X of the first display region 101. For example, the area of the first electrode of the element 115Y of the second display region 102 can be smaller than the area of the first electrode of the element 115X of the first display region 101. By making the area of the element 115Y smaller than the area of the element 115X, it is possible to form a transmissive region 104 in the second display region 102 as shown in FIG. 1B. Figure 47 Figure 48

[0368] ​​The ratio of the area of ​​the first electrode of element 115Y to the area of ​​the first electrode of element 115X can be, for example, 0.1 or more, 0.2 or more, or 0.3 or more. The ratio of the area of ​​the first electrode of element 115Y to the area of ​​the first electrode of element 115X can be, for example, 0.5 or less, 0.7 or less, or 0.9 or less. The range of the ratio of the area of ​​the first electrode of element 115Y to the area of ​​the first electrode of element 115X can be defined by a first group consisting of 0.1, 0.2, and 0.3 and / or a second group consisting of 0.5, 0.7, and 0.9. The range of the ratio of the area of ​​the first electrode of element 115Y to the area of ​​the first electrode of element 115X can be defined by a combination of any one value included in the first group and any one value included in the second group. The range of the ratio of the area of ​​the first electrode of element 115Y to the area of ​​the first electrode of element 115X can be defined by a combination of any two values ​​included in the first group above. The range of the ratio of the area of ​​the first electrode of element 115Y to the area of ​​the first electrode of element 115X can be defined by a combination of any two values ​​included in the second group above. For example, the ratio of the area of ​​the first electrode of element 115Y to the area of ​​the first electrode of element 115X can be 0.1 or more and 0.9 or less, or 0.1 or more and 0.7 or less, or 0.1 or more and 0.5 or less, or 0.1 or more and 0.3 or less, or 0.1 or more and 0.2 or less, or 0.2 or more and 0.9 or less, or 0.2 or more and 0.7 or less, or 0.2 or more and 0.5 or less, or 0.2 or more and 0.3 or less, or 0.3 or more and 0.9 or less, or 0.3 or more and 0.7 or less, or 0.3 or more and 0.5 or less, or 0.5 or more and 0.9 or less, or 0.5 or more and 0.7 or more and 0.7 or less.

[0369] Reference Figure 49 to 52 An example of a method for forming the transmission region 104 will be described. Specifically, an example of forming a suppression layer on the substrate 110 before the process of forming the second electrode 140 will be described. The suppression layer has the property of making it difficult for the conductive material constituting the second electrode 140 to adhere.

[0370] Figure 49 This is a top view showing an example of a mask 60 used to form a suppression layer. The mask 60 includes at least one unit 62. The unit 62 includes a through-hole 63 and a masking area 64. The mask 60 may include two or more units 62. One unit 62 may correspond to the display area of ​​one organic EL display device, i.e., one screen.

[0371] The mask 60 has a mask third region M3 and a mask fourth region M4, like the mask 50 described above. The mask third region M3 corresponds to the first display region 101 of the organic device 100. The mask fourth region M4 corresponds to the second display region 102 of the organic device 100.

[0372] The mask third region M3 includes the shield region 64. The mask third region M3 can not include the through-hole 63. That is, the entire region of the mask third region M3 can be composed of the shield region 64.

[0373] The mask fourth region M4 includes the through-hole 63 and the shield region 64. The through-hole 63 of the mask fourth region M4 corresponds to the transmissive region 104. For example, the mask fourth region M4 can include a plurality of through-holes 63 arranged in the mask first direction D1. The through-holes 63 can traverse the mask fourth region M4 in the mask first direction D1. The shield region 64 of the mask fourth region M4 corresponds to the second electrode 140Y. For example, the mask fourth region M4 can include a plurality of shield regions 64 arranged in the mask first direction D1. For example, the shield region 64 can extend in the mask second direction D2. For example, the shield region 64 of the mask fourth region M4 can include a first end and a second end connected to the shield region 64 of the mask third region M3. The second end is located on the side opposite to the first end in the mask second direction D2.

[0374] Figure 50 is a cross-sectional view showing an example of a suppression layer formation process of forming the suppression layer 170. The suppression layer formation process is performed after the process of forming the organic layer 130 and before the process of forming the second electrode 140.

[0375] The suppression layer formation process can include a process of evaporating a material of the suppression layer 170 onto the substrate 110 via the mask 60. As Figure 50 indicated, the suppression layer 170 is formed in the region of the substrate 110 overlapping with the through-hole 63.

[0376] Figure 51 is a plan view showing an example of the mask 50 used to form the second electrode 140. The mask 50 includes at least one unit 52. The unit 52 is composed of the through-hole 53. The unit 52 is surrounded by the shield region 54.

[0377] Figure 52 is a cross-sectional view showing an example of a process of forming the second electrode 140. The second electrode 140 is formed by evaporating a material of the second electrode 140 onto the substrate 110 via Figure 51 the mask 50. As described above, the suppression layer 170 has a characteristic that the conductive material constituting the second electrode 140 is difficult to adhere. As Figure 52As shown, the formation of the second electrode 140 on the suppression layer 170 can be inhibited. Thus, the region where the suppression layer 170 is formed can function as the transmission region 104.

[0378] The suppression layer 170 has transparency. For example, the transmittance of the laminate including the substrate 110 and the suppression layer 170 is preferably 70% or more, and more preferably 80% or more. The transmittance of the laminate including the substrate 110 and the suppression layer 170 can be measured by the test method for total light transmittance of plastics - transparent materials according to JIS K7361-1.

[0379] The material of the suppression layer 170 can be a material of a nucleation inhibiting coating described in WO2017072678A1 or WO2019150327A1. For example, the material of the suppression layer 170 can include a low molecular organic material and an organic material such as an organic polymer. The organic material can be, for example, a polycyclic aromatic compound. The polycyclic aromatic compound includes an organic molecule including a core portion and at least one terminal portion bonded to the core portion. The organic molecule can contain one or more heteroatoms of nitrogen, sulfur, oxygen, phosphorus, aluminum, and the like. The number of terminal portions can be one or more, can be two or more, can be three or more, or can be four or more. In the case where the organic molecule includes two or more terminal portions, the two or more terminal portions can be the same or can be different.

[0380] The terminal portion can include a biphenyl portion represented by any of the following chemical structures (l-a), (l-b), and (l-c).

[0381] (l-a)

[0382]

[0383] (l-b)

[0384]

[0385] (l-c)

[0386]

[0387] The substituents Raand Rbmay be independently selected from deuterium, fluorine, an alkyl group including C1 to C4 alkyl groups, a cycloalkyl group, an arylalkyl group, a silyl group, an aryl group, a heteroaryl group, a fluoroalkyl group, and any combination thereof, respectively.

[0388] Reference Figure 53 and Figure 54An example of a method of forming the transmissive region 104 will be described. Specifically, an example in which the transmissive region 104 is formed by partially removing the second electrode 140 will be described.

[0389] Figure 53 is a cross-sectional view showing an example of a process of forming the second electrode 140. Figure 53 The second electrode 140 is formed, for example, by evaporating a material of the second electrode 140 onto the substrate 110 via a mask 50 as shown in Figure 51 In this case, the second electrode 140 is formed over the entire region of the first display region 101 and the second display region 102.

[0390] After the process of forming the second electrode 140, a process of partially removing the second electrode 140 is performed. For example, as shown in Figure 54 laser L is partially irradiated to the second electrode 140 of the second display region 102. The second electrode 140 irradiated with the laser L is scattered, and thus the transmissive region 104 is formed.

[0391] Although not shown, the laser L can be irradiated to the second electrode 140 via a laser mask. The laser mask includes a through-hole corresponding to the transmissive region 104.

[0392]

EMBODIMENT

[0393] Next, the embodiments of the present disclosure will be described more specifically by way of examples, but the embodiments of the present disclosure are not limited by the description of the following examples as long as the gist of the present disclosure is not exceeded.

[0394] Example 1

[0395] Diffracted light generated in light passing between the electrode lines 140L was verified by simulation.

[0396] The substrate 110 and the second electrode 140 shown in Figure 38 were designed. The second electrode 140 includes a plurality of electrode lines 140L arranged in the element first direction G1. The electrode lines 140L are the same as the electrode lines 140L shown in Figure 3 The interval G11 irregularly changes depending on the position in the element first direction G1 and the element second direction G2.

[0397] Based on the results of the simulation, the second electrode 140 was designed as shown in Figure 39The intensity distribution of light passing between the electrode lines 140L and reaching the screen 113 was calculated by simulation. First, light LI was made to enter the substrate 110 in the direction of the normal line of the substrate 110. Next, the diffraction of light by the electrode lines 140L was calculated by simulation. Reference numeral L2 denotes light that proceeds straight without being diffracted and reaches the screen 113. Reference numeral Pc denotes the point of arrival of light L3 on the screen 113. Reference numeral L3 denotes light that is diffracted when passing between the electrode lines 140L. The wavelength of the light LI was 550 nm. The distance between the electrode lines 140L and the screen 113 was 5000 mm. Refraction of light by the substrate 110 was ignored.

[0398] The results of the simulation are shown in Figure 40 and Figure 41 . The horizontal axis represents the distance from the point Pc. The vertical axis represents the intensity of light reaching the screen 113. Figure 40 is the result of simulation when the transmittance of the electrode lines 140L was set to 0%. Figure 41 is the result of simulation when the transmittance of the electrode lines 140L was set to 60%.

[0399] Example 2

[0400] The substrate 110 and the second electrode 140 shown in Figure 42 were designed. The second electrode 140 includes a plurality of electrode lines 140L arranged in the element first direction Gl. The electrode lines 140L are the same as the electrode lines 140L shown in Figure 22 . The interval Gll is constant regardless of the position in the element first direction Gl and the element second direction G2.

[0401] The intensity distribution of light passing between the electrode lines 140L and reaching the screen 113 was calculated by simulation. The results of the simulation are shown in Figure 43 and Figure 44 . Figure 43 is the result of simulation when the transmittance of the electrode lines 140L was set to 0%. Figure 44 is the result of simulation when the transmittance of the electrode lines 140L was set to 60%.

[0402] From the comparison between Figure 40 and Figure 43 , and the comparison between Figure 41 and Figure 44 , it is understood that by making the interval Gll irregular, it is possible to suppress the case where diffracted light L3 having a high intensity reaches the screen 113.

Claims

1. An organic device, wherein, The organic device comprises: substrate; The first electrode is located on the substrate; An organic layer, which is located on the first electrode; and The second electrode is located on the organic layer. Viewed along the normal direction of the substrate, the organic device includes: a first display area comprising the second electrode having a first occupancy; and a second display area comprising the second electrode having a second occupancy smaller than the first occupancy. In the second display area, The organic layers are arranged in a first direction and a second direction intersecting the first direction. The second electrode comprises electrode lines arranged in the first direction. Two adjacent electrode lines in the first direction are not connected to each other. The electrode lines comprise electrode segments arranged in the second direction and overlapping the organic layer. Two adjacent electrode segments in the second direction are connected to each other. The electrode segment comprises: a first electrode segment having a first shape; and a second electrode segment having a second shape different from the first shape.

2. The organic device according to claim 1, wherein, The first electrode segment includes: a first pixel segment overlapping the organic layer; and a first connection segment connected to the first pixel segment. The second electrode segment includes: a second pixel segment overlapping the organic layer; and a second connection segment connected to the second pixel segment. The shape of the first connecting segment is different from the shape of the second connecting segment.

3. The organic device according to claim 2, wherein, The area of ​​the first connecting segment is different from the area of ​​the second connecting segment.

4. The organic device according to claim 2, wherein, The first connection segment includes: a first connection end connected to the first pixel segment; and a second connection end located on the side opposite to the first connection end in the second direction. The position of the first connecting end in the first direction is the same as the position of the second connecting end in the first direction. The second connection segment includes: a third connection end connected to the second pixel segment; and a fourth connection end located on the side opposite to the third connection end in the second direction. The position of the third connecting end in the first direction is different from the position of the fourth connecting end in the first direction.

5. The organic device according to claim 1, wherein, The first electrode segment includes: a first pixel segment overlapping the organic layer; and a first connection segment connected to the first pixel segment. The second electrode segment includes: a second pixel segment overlapping the organic layer; and a second connection segment connected to the second pixel segment. The shape of the first pixel segment is different from the shape of the second pixel segment.

6. The organic device according to claim 5, wherein, The area of ​​the first pixel segment is different from the area of ​​the second pixel segment.

7. The organic device according to claim 5, wherein, The size of the first pixel segment in the first direction is different from the size of the second pixel segment in the first direction.

8. The organic device according to any one of claims 1 to 7, wherein, The electrode segment includes: a first electrode connection where the first electrode segment and the second electrode segment are connected in the second direction; and a second electrode connection where the first electrode segment and the second electrode segment are connected in the second direction.

9. The organic device according to any one of claims 1 to 7, wherein, The electrode segment includes: a first electrode arrangement in which the first electrode segment and the second electrode segment are arranged in the first direction; and a second electrode arrangement in which the first electrode segment and the second electrode segment are arranged in the first direction.

10. The organic device according to any one of claims 1 to 7, wherein, The electrode segment includes a third electrode segment, which has a third shape that is different from the first shape and the second shape.

11. A mask assembly having a first mask direction and a second mask direction intersecting the first mask direction, for fabricating the second electrode of the organic device of claim 1, wherein, The mask group has two or more masks. The mask has a shielding area and a through hole. A mask stack comprising two or more of the aforementioned masks has a through region that overlaps with the through-hole when viewed along the normal direction of the mask. Viewed along the normal direction of the mask, the mask stack comprises: a first mask region including the through region having a first aperture ratio; and a second mask region including the through region having a second aperture ratio smaller than the first aperture ratio. In the second region of the mask, the through region includes through lines arranged in the first direction of the mask. Two adjacent through lines in the first direction of the mask are not connected to each other, and the through lines are contained in through segments arranged in the second direction of the mask. Two adjacent through segments in the second direction of the mask are connected to each other. The through segment comprises: a first through segment having a first through shape; and a second through segment having a second through shape different from the first through shape.

12. The mask assembly according to claim 11, wherein, The first through section includes: a first main section; and a first secondary section connected to the first main section. The second through section includes: a second main section and a second secondary section connected to the second main section. The shape of the first sub-segment is different from the shape of the second sub-segment.

13. The mask assembly according to claim 12, wherein, The area of ​​the first sub-segment is different from the area of ​​the second sub-segment.

14. The mask assembly according to claim 12, wherein, The first sub-segment includes: a fifth connecting end, which is connected to the first main segment; and a sixth connecting end, which is located on the side opposite to the fifth connecting end in the second direction of the mask. The position of the fifth connecting end in the first direction of the mask is the same as the position of the sixth connecting end in the first direction of the mask. The second sub-segment includes: a seventh connecting end, which is connected to the second main segment; and an eighth connecting end, which is located on the side opposite to the seventh connecting end in the second direction of the mask. The position of the 7th connecting end in the first direction of the mask is different from the position of the 8th connecting end in the first direction of the mask.

15. The mask assembly according to claim 11, wherein, The first through section includes: a first main section; and a first secondary section connected to the first main section. The second through section includes: a second main section and a second secondary section connected to the second main section. The shape of the first main segment is different from the shape of the second main segment.

16. The mask assembly according to claim 15, wherein, The area of ​​the first main segment is different from the area of ​​the second main segment.

17. The mask assembly according to claim 15, wherein, The dimensions of the first main segment in the first direction of the mask are different from the dimensions of the second main segment in the first direction of the mask.

18. The mask assembly according to any one of claims 11 to 17, wherein, The through section includes: a first mask connection where the first through section and the second through section are connected in the second direction of the mask; and a second mask connection where the first through section and the first through section are connected in the second direction of the mask.

19. The mask assembly according to any one of claims 11 to 17, wherein, The through segment includes: a first mask arrangement in which the first through segment and the second through segment are arranged in the first direction of the mask; and a second mask arrangement in which the first through segment and the first through segment are arranged in the first direction of the mask.

20. The mask assembly according to any one of claims 11 to 17, wherein, The through segment includes a third through segment, which has a third through shape that is different from the first through shape and the second through shape.

21. A method for manufacturing an organic device, wherein, The method for manufacturing the organic device includes a second electrode forming step of forming a second electrode on an organic layer on a first electrode on a substrate using the mask set described in any one of claims 11 to 17. The second electrode forming process includes: The process of forming the first layer of the second electrode using a vapor deposition method with the first said mask; and The process of forming the second layer of the second electrode by using the vapor deposition method of the second mask.

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