Phased Array Antenna System and Electronic Device

Abstract

A phased array antenna system, comprising: a feeding structure and at least one phased array antenna element, wherein the at least one phased array antenna element includes: a first impedance transformation unit, a MEMS phase shifting multi-unit, and an antenna. The first impedance transformation unit is connected to the feeding structure, and the MEMS phase shifting multi-unit is connected between the first impedance transformation unit and the antenna.

Description

Technical Field

[0001] This document relates to, but is not limited to, the field of communication technologies, and particularly refers to a phased array antenna system and an electronic device. Background Art

[0002] The phased array antenna is currently one of the most important antenna forms in satellite mobile communication systems. Compared with traditional mechanically scanned antennas, phased array antennas do not require mechanical rotation of the antenna plane. They mainly rely on phase changes to achieve the movement and scanning of the antenna beam pointing in space, and have many advantages such as small volume, low profile, fast response speed, wide scanning range, and high scanning accuracy. The application scope of phased array antennas is extremely wide. For example, they can be applied to communication between vehicles and satellites, array radars for unmanned driving, or safety protection array radars, etc. Summary of the Invention

[0003] The following is an overview of the subject matter described in detail in this document. This overview is not intended to limit the scope of protection of the claims.

[0004] Embodiments of the present disclosure provide a phased array antenna system and an electronic device.

[0005] On the one hand, embodiments of the present disclosure provide a phased array antenna system, including: a feeding structure and at least one phased array antenna element. The at least one phased array antenna element includes: a first impedance transformation unit, a MEMS phase shift multi-unit, and an antenna. The first impedance transformation unit is connected between the feeding structure and the MEMS phase shift multi-unit, and the MEMS phase shift multi-unit is connected between the first impedance transformation unit and the antenna.

[0006] On the other hand, embodiments of the present disclosure provide an electronic device, including the phased array antenna system as described above.

[0007] Other aspects can be understood after reading the drawings and the detailed description. Brief Description of the Drawings

[0008] The drawings are used to provide a further understanding of the technical solutions of the present disclosure, and constitute a part of the specification. Together with the embodiments of the present disclosure, they are used to explain the technical solutions of the present disclosure, and do not constitute a limitation to the technical solutions of the present disclosure. The shapes and sizes of one or more components in the drawings do not reflect the true scale, and the purpose is only to schematically illustrate the content of the present disclosure.

[0009] Figure 1 It is a schematic structural diagram of a phased array antenna system according to at least one embodiment of the present disclosure;

[0010] Figure 2A It is a schematic diagram of a feeding structure according to at least one embodiment of the present disclosure;

[0011] Figure 2B is another schematic diagram of a feeding structure according to at least one embodiment of the present disclosure;

[0012] Figure 3 A schematic diagram of the structure of a phased array antenna element according to at least one embodiment of the present disclosure;

[0013] Figure 4 A schematic diagram of a MEMS phase shift multi-unit according to at least one embodiment of the present disclosure;

[0014] Figure 5A A schematic structural diagram of a first impedance transformation unit according to at least one embodiment of the present disclosure;

[0015] Figure 5B is another structural schematic diagram of the first impedance transformation unit of at least one embodiment of the present disclosure;

[0016] Figure 6A A schematic diagram of the structure of a first switching unit according to at least one embodiment of the present disclosure;

[0017] Figure 6B Another structural schematic diagram of the first adapter unit of at least one embodiment of the present disclosure;

[0018] Figure 6C is another structural schematic diagram of the first switching unit of at least one embodiment of the present disclosure;

[0019] Figure 6D It is another structural schematic diagram of the first switching unit of at least one embodiment of the present disclosure;

[0020] Figure 7 It is another structural schematic diagram of a phased array antenna element according to at least one embodiment of the present disclosure;

[0021] Figure 8 for Figure 7 A top view of the phased array antenna element shown;

[0022] Figure 9 It is another structural schematic diagram of a phased array antenna element according to at least one embodiment of the present disclosure;

[0023] Figure 10 for Figure 9 A top view of the phased array antenna element shown;

[0024] Figures 11A to 11D for Figure 9 Schematic diagram of simulation results of phased array antenna elements shown;

[0025] Figure 12 It is another structural schematic diagram of a phased array antenna element according to at least one embodiment of the present disclosure;

[0026] Figure 13Another structural schematic diagram of a phased array antenna element according to at least one embodiment of the present disclosure;

[0027] Figure 14 Another structural schematic diagram of a phased array antenna element according to at least one embodiment of the present disclosure;

[0028] Figure 15 Another structural schematic diagram of a phased array antenna element according to at least one embodiment of the present disclosure;

[0029] Figure 16 Schematic diagram of an electronic device according to at least one embodiment of the present disclosure. Detailed implementation manners

[0030] To make the objectives, technical solutions and advantages of the present disclosure clearer and more understandable, the embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. The implementation manners can be implemented in multiple different forms. It is easy for those of ordinary skill in the technical field to understand the fact that the manners and contents can be transformed into one or more forms without departing from the gist and scope of the present disclosure. Therefore, the present disclosure should not be construed as being limited only to the contents described in the following implementation manners. The embodiments and features in the embodiments of the present disclosure can be combined arbitrarily with each other without conflict.

[0031] In the accompanying drawings, sometimes for clarity, the sizes, thicknesses of layers or areas of one or more constituent elements are exaggerated. Therefore, one manner of the present disclosure is not necessarily limited to such sizes, and the shapes and sizes of multiple components in the drawings do not reflect the true proportions. In addition, the drawings schematically show ideal examples, and one manner of the present disclosure is not limited to the shapes or values shown in the drawings, etc.

[0032] The ordinal numbers such as "first", "second", "third", etc. in the present disclosure are set to avoid confusion of constituent elements, rather than to limit in terms of quantity. The "multiple" in the present disclosure means two or more quantities.

[0033] In the present disclosure, for convenience, terms indicating orientation or positional relationship such as "middle part", "upper", "lower", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. are used to describe the positional relationship of constituent elements with reference to the accompanying drawings, which are only for facilitating the description of this specification and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus cannot be construed as a limitation to the present disclosure. The positional relationship of the constituent elements changes appropriately according to the direction of describing the constituent elements. Therefore, it is not limited to the terms described in the specification and can be replaced appropriately according to the situation.

[0034] In the present disclosure, unless otherwise clearly specified or limited, the terms "install", "connect", and "couple" shall be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection; it may be a mechanical connection or an electrical connection; it may be a direct connection, or an indirect connection through an intermediate member, or a communication inside two elements. For those of ordinary skill in the art, the meanings of the above terms in the present disclosure can be understood according to the circumstances.

[0035] In the present disclosure, "electrically connected" includes a situation where constituent elements are connected together through an element having a certain electrical effect. There is no particular limitation on the "element having a certain electrical effect" as long as it can transmit and receive electrical signals between the constituent elements that can be connected. Examples of the "element having a certain electrical effect" include not only electrodes and wirings, but also switching elements such as transistors, resistors, inductors, capacitors, and other elements having one or more functions.

[0036] In the present disclosure, "parallel" means a state where the angle formed by two straight lines is -10° or more and 10° or less, and thus, it may include a state where the angle is -5° or more and 5° or less. In addition, "perpendicular" means a state where the angle formed by two straight lines is 80° or more and 100° or less, and thus, it may include a state where the angle is 85° or more and 95° or less.

[0037] "About" in the present disclosure means not strictly limiting the boundary and allowing a value within the range of process and measurement errors.

[0038] In the present disclosure, a microelectromechanical system (MEMS, Micro Electromechanical System) refers to a high-tech device with dimensions in several millimeters or smaller, and its internal structure is generally on the order of micrometers or even nanometers, and it is an independent intelligent system.

[0039] In the present disclosure, a coplanar waveguide (CPW, Coplanar Waveguide) refers to a structure formed by fabricating a center conductor strip on one surface of a dielectric substrate and fabricating conductor planes on both sides adjacent to the center conductor strip, also called a coplanar microstrip transmission line.

[0040] In the present disclosure, a microstrip (MS, Micro-strip) refers to a microwave transmission line composed of a single conductor strip supported on a dielectric substrate.

[0041] At least one embodiment of the present disclosure provides a phased array antenna system, including: a feeding structure and at least one phased array antenna element. The at least one phased array antenna element includes: a first impedance transformation unit, a MEMS phase shift multi-unit, and an antenna. The first impedance transformation unit is connected to the feeding structure, and the MEMS phase shift multi-unit is connected between the first impedance transformation unit and the antenna.

[0042] This embodiment combines the MEMS phase-shifting multi-unit and the antenna to form a phased array antenna system, thereby realizing a phased array antenna system with advantages such as short response time (for example, reaching the microsecond level), low loss, and no temperature restriction. The impedance matching between the feeding structure and the MEMS phase-shifting multi-unit can be achieved through the first impedance transformation unit.

[0043] In some exemplary embodiments, the MEMS phase-shifting multi-unit includes a CPW structure having a characteristic impedance greater than 50 ohms. For example, the characteristic impedance of the CPW structure included in the MEMS phase-shifting multi-unit may be 100 ohms. However, this embodiment is not limited to this. This exemplary embodiment supports increasing the phase shift degree of a single phase-shifting unit in the MEMS phase-shifting multi-unit by increasing the characteristic impedance of the CPW structure included in the MEMS phase-shifting multi-unit, thereby reducing the number of single phase-shifting units in the MEMS phase-shifting unit, thereby reducing the loss of the phased array antenna system.

[0044] In some exemplary embodiments, at least one phased array antenna element further includes: at least one switching unit. At least one switching unit is connected to the first impedance transformation unit or the MEMS phase shift multi-unit and is configured to achieve conversion between the microstrip structure and the coplanar waveguide structure. By using the switching unit, the phased array antenna system of this exemplary embodiment supports multiple types of feeding forms and antenna forms.

[0045] In some exemplary embodiments, at least one switching unit includes: a first switching unit. The first switching unit is connected between the feeding structure and the first impedance transformation unit, and is configured to achieve conversion from a microstrip structure to a coplanar waveguide structure. In this exemplary embodiment, by providing the first switching unit between the feeding structure and the first impedance transformation unit, multiple types of feeding forms can be supported, such as a direct feeding method or a slot coupling feeding method.

[0046] In some exemplary embodiments, at least one switching unit includes: a second switching unit. The second switching unit is connected between the MEMS phase-shifting multi-unit and the antenna, and is configured to achieve the conversion from the coplanar waveguide structure to the microstrip structure. In this exemplary embodiment, by providing the second switching unit between the MEMS phase-shifting multi-unit and the antenna, multiple types of antenna forms can be supported.

[0047] In some exemplary embodiments, at least one phased array antenna element further includes: a second impedance transformation unit. The second impedance transformation unit is connected between the MEMS phase-shifting multi-unit and the antenna. By providing the second impedance transformation unit, impedance matching between the MEMS phase-shifting multi-unit and the antenna can be achieved.

[0048] In some exemplary embodiments, the first impedance transformation unit includes at least: a first impedance transformation structure connected between two CPW structures with different characteristic impedances. The characteristic impedance Z1 of the first impedance transformation structure and the characteristic impedances Z2 and Z3 of the two CPW structures connected by the first impedance transformation structure satisfy the following relationship: Alternatively, the first impedance transformation structure is a gradual transition structure connected between two CPW structures with different characteristic impedances. In this exemplary embodiment, a 1 / 4 wavelength impedance transformation or a gradual transition structure may be used to achieve impedance transformation.

[0049] In some exemplary embodiments, at least one adapter unit includes: an adapter structure connected between the MS structure and the CPW structure. The adapter structure includes a signal adapter line disposed on a first surface of a dielectric substrate, and a first adapter ground line disposed on a second surface of the dielectric substrate opposite to the first surface. The signal adapter line is connected between the MS signal line of the MS structure and the CPW signal line of the CPW structure, the first adapter ground line is formed by extending the MS ground line of the MS structure, and the projection of the signal adapter line on the dielectric substrate is located within the projection of the first adapter ground line on the dielectric substrate.

[0050] In some exemplary embodiments, the adapter structure includes: a signal adapter wire and a second adapter ground wire disposed on a first surface of a dielectric substrate, and a first adapter ground wire disposed on a second surface of the dielectric substrate opposite to the first surface. The signal adapter wire is connected between the MS signal line of the MS structure and the CPW signal line of the CPW structure, the first adapter ground wire is formed by extending the MS ground line of the MS structure, and the second adapter ground wire is formed by extending the CPW ground line of the CPW structure. The projection of the signal adapter wire on the dielectric substrate is located within the projection of the first adapter ground wire on the dielectric substrate. The signal adapter wire of the adapter structure has a step-shaped changing edge along the extension direction, the first adapter ground wire has a step-shaped changing edge on the side close to the CPW structure, and the second adapter ground wire has a step-shaped changing edge on the side close to the MS structure; or, the signal adapter wire of the adapter structure has a gradual changing edge along the extension direction, the first adapter ground wire has a gradual changing edge on the side close to the CPW structure, and the second adapter ground wire has a gradual changing edge on the side close to the MS structure.

[0051] In some exemplary embodiments, at least one switching unit includes: a switching structure connected between the MS structure and the CPW structure, the switching structure including a grounded coplanar waveguide (GCPW) structure.

[0052] In some exemplary embodiments, the phased array antenna system further includes: a slot coupling structure. The slot coupling structure is connected to the feeding structure and is configured to feed the first switching unit via slot coupling. In this exemplary embodiment, slot coupling feeding can be achieved by providing the slot coupling structure.

[0053] In some exemplary embodiments, the feeding structure includes: a feeding unit. The feeding unit includes: a DC power supply, a vector network analyzer, a DC-blocking capacitor, a T-shaped bias tee, and an SMA radio frequency coaxial connector; the DC-blocking capacitor is connected to the vector network analyzer, the T-shaped bias tee is connected between the DC-blocking capacitor and the SMA, the DC power supply is connected to the T-shaped bias tee, and the SMA is connected to the phased array antenna element. Alternatively, the feeding unit includes: a DC power supply, a vector network analyzer, a control circuit, a flexible printed circuit board, and an SMA; the control circuit is connected to the DC power supply, the flexible printed circuit board is connected between the control circuit and the phased array antenna element, and the SMA is connected between the vector network analyzer and the phased array antenna element.

[0054] In some exemplary embodiments, the feeding structure further includes: a power distribution network, and the power distribution network is connected between the feeding unit and a plurality of phased array antenna elements.

[0055] In some exemplary embodiments, the MEMS phase-shifting multi-unit includes at least sixteen phase-shifting units. At least one phase-shifting unit includes a CPW signal line and a CPW ground line on the same surface of the dielectric substrate, an insulating layer covering the CPW signal line, and a metal bridge on the side of the insulating layer away from the dielectric substrate, and the metal bridge spans across the CPW signal line. The CPW signal lines of the sixteen phase-shifting units are connected in sequence.

[0056] The phased array antenna system of this embodiment is illustrated by multiple examples below.

[0057] Figure 1 It is a schematic structural diagram of the phased array antenna system according to at least one embodiment of the present disclosure. As Figure 1 shown, the phased array antenna system of this exemplary embodiment includes: a feeding structure 10 and a plurality of phased array antenna elements. Figure 1 Only four phased array antenna elements 20a, 20b, 20c, and 20d are schematically shown. However, the number of phased array antenna elements in this embodiment is not limited. As Figure 1 shown, the feeding structure 10 includes a feeding unit 101 and a power distribution network 102. The power distribution network 102 is connected between the feeding unit 101 and a plurality of phased array antenna elements. The feeding unit 101 can feed a plurality of phased array antenna elements through the power distribution network 102. In this exemplary embodiment, a plurality of phased array antenna elements are combined to form a linear array and a planar array through the power distribution network, which can improve the gain of the phased array antenna system.

[0058] Figure 2A It is a schematic diagram of a feeding structure according to at least one embodiment of the present disclosure. As Figure 2AAs shown in the figure, the feeding unit of this exemplary embodiment may include: a DC power supply 111, a vector network analyzer 112, a DC blocker 113, a T-type bias tee 114, and an RF coaxial connector SMA 115. The DC blocker 113 is connected to the vector network analyzer 112, the T-type bias tee 114 is connected between the DC blocker 113 and the SMA 115, the DC power supply 111 is connected to the T-type bias tee 114, and the SMA 115 is connected to the power distribution network. The DC blocker 113, the T-type bias tee 114, the SMA 115, the power distribution network, and the phased array antenna elements are in an anechoic chamber to exclude external electromagnetic interference. The DC power supply 111 can provide a DC signal, and the vector network analyzer 112 can provide an RF signal. The DC blocker 113 may include a DC blocking circuit. The T-type bias tee 114 can inject a DC signal into the RF circuit without affecting the RF signal passing through the main transmission path. In some examples, when the feeding structure does not include a power distribution network, the T-type bias tee can be directly connected to the phased array antenna elements through the SMA. In the feeding structure of this exemplary embodiment, the RF signal provided by the vector network analyzer and the DC signal provided by the DC power supply can be combined into one path and then input into the phased array antenna elements.

[0059] Figure 2B Another schematic diagram of the feeding structure according to at least one embodiment of the present disclosure. As Figure 2B As shown in the figure, the feeding unit of this exemplary embodiment may include: a DC power supply 111, a vector network analyzer 112, a control circuit 116, a flexible printed circuit (FPC) 117, and an SMA 118. Among them, the FPC 117, the SMA 118, the power distribution network, and the phased array antenna elements are in an anechoic chamber to exclude external electromagnetic interference. The DC power supply 111 can provide a DC signal, and the vector network analyzer 112 can provide an RF signal. The control circuit 116 is connected to the DC power supply 111 and can control the DC signal provided by the DC power supply 111. The FPC 117 is connected between the control circuit 116 and the power distribution network and can realize the electrical connection between the control circuit 116 and the power distribution network. The vector network analyzer 112 can provide an RF signal. The SMA 118 is connected between the vector network analyzer 112 and the power distribution network. In some examples, when the feeding structure does not include a power distribution network, the control circuit 116 can be directly connected to the phased array antenna elements through the FPC 117, and the vector network analyzer 112 can be directly connected to the phased array antenna elements through the SMA 118. In the feeding structure provided by this exemplary embodiment, the RF signal provided by the vector network analyzer and the DC signal provided by the DC power supply can be separately input into the phased array antenna elements.

[0060] Figure 3 A schematic structural diagram of a phased array antenna element according to at least one embodiment of the present disclosure. AsFigure 3 As shown, the phased array antenna element of this exemplary embodiment includes: a MEMS phase-shifting multi-unit 21, an antenna 22, a first impedance transformation unit 23, a first switching unit 24, a second impedance transformation unit 25, and a second switching unit 26. The first switching unit 24 is connected between the feeding structure 10 and the first impedance transformation unit 23, the MEMS phase-shifting multi-unit 21 is connected between the first impedance transformation unit 23 and the second impedance transformation unit 25, and the second switching unit 26 is connected between the second impedance transformation unit 25 and the antenna 22. The MEMS phase-shifting multi-unit 21 includes a CPW structure with a characteristic impedance greater than 50 ohms. For example, the characteristic impedance of the CPW structure in the MEMS phase-shifting multi-unit can be 100 ohms. However, this embodiment is not limited to this.

[0061] Figure 4 FIG. 1 is a schematic diagram of the structure of a MEMS phase shift multi-unit in at least one embodiment of the present disclosure. In some exemplary embodiments, the MEMS phase shift multi-unit may include n phase shift units, where n is a positive integer. Figure 4 As shown, n can be 1, 2, 4 or 8, etc. This embodiment is not limited to this.

[0062] In some examples, such as Figure 4 As shown, a single phase shift unit may include a CPW signal line 211 and a CPW ground line 212 disposed on the same surface of a dielectric substrate 200, an insulating layer covering the CPW signal line 211, and a metal bridge 213 disposed on the insulating layer. The CPW ground line 212 is located on opposite sides of the CPW signal line 211, and the metal bridge 213 spans the CPW signal line 211. The projection of the metal bridge 213 on the dielectric substrate 200 overlaps with both the CPW signal line 211 and the CPW ground line 212. By periodically loading a driving voltage on the metal bridge 213, the suspended part of the metal bridge 213 is deformed toward the side close to the CPW signal line 211 under the action of an electrostatic force. After the metal bridge 213 is deformed, the distance between the metal bridge 213 and the CPW signal line 211 is changed, causing a change in the load capacitance between the CPW signal line 211 and the metal bridge 213, thereby causing a change in the transmission speed of the microwave signal transmitted on the CPW signal line 211. When the transmission rate of the microwave signal changes, its phase also changes with the change of the transmission speed, thereby achieving phase shift of the microwave signal.

[0063] In some examples, when n=1, the phase shift of a single phase shift unit is 27.89 degrees and the insertion loss is -0.29dB. When the period s between the phase shift units is 1.5mm (i.e., the spacing between adjacent metal bridges is 1.5mm), the coupling between multiple phase shift units can be ignored. For example, when n=16, the average phase shift of a single phase shift unit is 27.01 degrees, and only about 16 phase shift units are needed to complete a 360-degree phase shift change. In some examples, the MEMS phase shift multi-unit includes 16 phase shift units connected in sequence, and the characteristic impedance of the CPW structure of the MEMS phase shift multi-unit can be 100 ohms. However, this embodiment does not limit the connection method of multiple phase shift units within the MEMS phase shift multi-unit.

[0064] In some exemplary embodiments, Figure 3 As shown, the first impedance transformation unit 23 is configured to achieve impedance matching between the feeding structure 10 and the MEMS phase-shifting multi-unit 21, and the second impedance transformation unit 25 is configured to achieve impedance matching between the MEMS phase-shifting multi-unit 21 and the antenna 22. For example, if the characteristic impedance of the CPW structure in the MEMS phase-shifting multi-unit is 100 ohms, the first impedance transformation unit can convert the characteristic impedance of 50 ohms into 100 ohms to achieve impedance matching between the feeding structure and the MEMS phase-shifting multi-unit, and the second impedance transformation unit can convert the characteristic impedance of 100 ohms into 50 ohms to achieve impedance matching between the MEMS phase-shifting multi-unit and the antenna. However, this embodiment is not limited to this.

[0065] In some exemplary embodiments, Figure 3 As shown, the first adapter unit 24 is configured to achieve the conversion from the MS structure to the CPW structure, so that the feeding structure 10 is connected to the first adapter unit 24 through the SMA corresponding to the pin of the MS structure. The second adapter unit 26 is configured to achieve the conversion from the CPW structure to the MS structure, so as to feed the antenna 22 through the MS structure.

[0066] Figure 5A A schematic diagram of the structure of a first impedance transformation unit according to at least one embodiment of the present disclosure. Figure 5A FIG. 1 is a top view of the first impedance transformation unit. Figure 5AAs shown, the first impedance transformation unit of this exemplary embodiment at least includes: a first impedance structure 232 and a first impedance transformation structure 231. The first impedance structure 232 and the first impedance transformation structure 231 are both CPW structures. The first end of the first impedance transformation structure 231 is connected to the CPW structure of the MEMS phase-shift multi-unit 21, and the second end of the first impedance change structure 231 is connected to the first impedance structure 232. The first impedance structure 232 can be directly connected to the feeding structure, or connected to the feeding structure through a first switching unit. For example, the first end of the first impedance structure 232 is connected to the first impedance transformation structure 231, and the second end of the first impedance structure 232 is connected to the SMA of the corresponding CPW structure pin of the feeding structure, or the second end of the first impedance structure 232 is connected to the SMA of the corresponding MS structure pin of the feeding structure through the first switching unit.

[0067] In some exemplary embodiments, the first impedance transformation unit can achieve 1 / 4 wavelength impedance transformation. Figure 5A As shown, the characteristic impedance of the first impedance transformation structure 231 is recorded as Z1, the characteristic impedance of the first impedance structure 232 is recorded as Z2, and the characteristic impedance of the CPW structure of the MEMS phase-shifting multi-unit 21 is recorded as Z3. The characteristic impedances Z1, Z2 and Z3 satisfy the following relationship:

[0068] In some exemplary embodiments, Figure 5AAs shown, the first impedance structure 232 includes: a first CPW signal line 232a and two first CPW ground lines 232b located on the dielectric substrate 200. The first CPW signal line 232a and the two first CPW ground lines 232b are located on the same surface of the dielectric substrate 200, and the two first CPW ground lines 232b are located on opposite sides of the first CPW signal line 232a. Both the first CPW signal line 232a and the first CPW ground lines 232b extend along the first direction X. The two first CPW ground lines 232b are symmetric with respect to the center line of the first CPW signal line 232a along the second direction Y. The first direction X and the second direction Y are in the same plane, and the first direction X is perpendicular to the second direction Y. The first impedance transformation structure 231 includes: a second CPW signal line 231a and two second CPW ground lines 231b located on the dielectric substrate 200. The second CPW signal line 231a and the two second CPW ground lines 231b are located on the same surface of the dielectric substrate 200, and the two second CPW ground lines 231b are located on opposite sides of the second CPW signal line 231a. Both the second CPW signal line 231a and the second CPW ground lines 231b extend along the first direction X. The two second CPW ground lines 231b are symmetric with respect to the center line of the second CPW signal line 231a along the second direction Y. The second CPW ground lines 231b are connected to the first CPW ground lines 232b in a one-to-one correspondence, and the second CPW signal line 231a is connected to the first CPW signal line 232a. The average length of the second CPW signal line 231a along the second direction Y is less than the average length of the first CPW signal line 232a along the second direction Y and greater than the average length of the CPW signal line 211 of the CPW structure of the MEMS phase shifter multi-unit 21 along the second direction Y. The average length of the second CPW ground lines 231b along the second direction Y is less than the average length of the first CPW ground lines 232b along the second direction Y and greater than the average length of the CPW ground lines 212 of the CPW structure of the MEMS phase shifter multi-unit 21 along the second direction Y.

[0069] In some examples, as Figure 5A shown, the projection of the end of the first CPW signal line 232a connected to the second CPW signal line 231a on the dielectric substrate 200 has two symmetric chamfered corners, and these two chamfered corners are symmetric with respect to the center line of the first CPW signal line 232a parallel to the first direction X. The projection of the end of the second CPW signal line 231a connected to the CPW signal line of the CPW structure of the MEMS phase shifter multi-unit 21 on the dielectric substrate 200 has two symmetric chamfered corners, and these two chamfered corners are symmetric with respect to the center line of the second CPW signal line 231a parallel to the first direction X. However, this embodiment is not limited thereto. For example, the projections of the second CPW signal line and the first CPW signal line on the dielectric substrate can both be rectangles.

[0070] Figure 5BSchematic diagram of another structure of the first impedance transformation unit of at least one embodiment of the present disclosure. Figure 5B FIG. 1 is a top view of the first impedance transformation unit. Figure 5B As shown, the first impedance transformation unit of this exemplary embodiment at least includes: a first impedance structure 232 and a first impedance transformation structure 231. The first impedance structure 232 and the first impedance transformation structure 231 are both CPW structures. Figure 5B In the first impedance transformation unit shown, the first impedance transformation structure 231 is a transition structure between the first impedance structure 232 and the CPW structure of the MEMS phase-shift multi-unit 21. The length of the second CPW signal line 231a of the first impedance transformation structure 231 along the second direction Y gradually decreases along the direction away from the first impedance structure 232. For example, the length of the second CPW signal line 231a of the first impedance transformation structure 231 along the second direction Y gradually decreases along the direction away from the first impedance structure 232 from the length of the first CPW signal line 232a of the first impedance structure 232 along the second direction Y to the length of the CPW signal line 211 of the CPW structure of the MEMS phase-shift multi-unit 21 along the second direction Y. The length of the second CPW ground line 231b of the first impedance transformation structure 231 along the second direction Y gradually increases along the direction away from the first impedance structure 232, thereby achieving a gradual change in impedance. For example, the length of the second CPW ground line 231b of the first impedance transformation structure 231 along the second direction Y gradually decreases from the length of the first CPW ground line 232b of the first impedance structure 232 along the second direction Y to the length of the CPW ground line 212 of the CPW structure of the MEMS phase shift multi-unit 21 along the second direction Y along the direction away from the first impedance structure 232. In this exemplary embodiment, the impedance transformation is achieved by the gradual change structure of the first impedance transformation structure. For the remaining structural description of the first impedance transformation unit, please refer to Figure 5A The embodiments are shown, so they will not be described in detail here.

[0071] Figure 6A A schematic structural diagram of a first switching unit according to at least one embodiment of the present disclosure. Figure 6A FIG. 1 is a top view of the first switching unit. In some exemplary embodiments, the first switching unit is connected between the MS structure and the CPW structure to achieve the conversion from the MS structure to the CPW structure. Figure 6A As shown, the first switching unit includes: a first switching structure 241, and the first switching structure 241 is connected between the MS structure and the CPW structure. Figure 3 Taking the phased array antenna system shown as an example, the MS structure connected to the first switching structure 241 may be connected to the feeding structure, and the CPW structure connected to the first switching structure 241 may be the CPW structure of the first impedance transformation unit.

[0072] In some exemplary embodiments,Figure 6A As shown, the MS structure connected by the first adapter structure 241 includes: an MS ground line 242b located on the second surface of the dielectric substrate and an MS signal line 242a located on the first surface of the dielectric substrate. The first surface and the second surface are two opposite surfaces of the dielectric substrate. The CPW structure connected by the first adapter structure 241 includes: a CPW signal line 232a and two CPW ground lines 232b located on the first surface of the dielectric substrate. The two CPW ground lines 232b are located on opposite sides of the CPW signal line 232a. The first adapter structure 241 includes: a signal adapter line 241a located on the first surface of the dielectric substrate and a first adapter ground line located on the second surface of the dielectric substrate. The two ends of the signal adapter line 241a are respectively connected to the MS signal line 242a of the MS structure and the CPW signal line 232a of the CPW structure, and the first adapter ground line is formed by extending the MS ground line 242b of the MS structure. The length of the signal adapter line 241a along the second direction Y is less than the length of the MS signal line 242a of the MS structure along the second direction Y, and may be equal to the length of the CPW signal line 232a of the CPW structure along the second direction Y.

[0073] Figure 6B Another structural schematic diagram of the first switching unit of at least one embodiment of the present disclosure. Figure 6B FIG. 1 is a top view of the first switching unit. Figure 6B As shown, the first adapter unit includes: a first adapter structure 241 connected between the MS structure and the CPW structure. The first adapter structure 241 includes: a signal adapter line 241a and a second adapter ground line located on the first surface of the dielectric substrate, and a first ground line located on the second surface of the dielectric substrate. The length of the signal adapter line 241a of the first adapter structure 241 in the second direction Y decreases in a step-like manner along the direction away from the MS structure until it is the same as the length of the CPW signal line 232a of the CPW structure in the second direction Y. The signal adapter line 241a extends along the first direction X and has a step-like changing edge along the extending direction. The first adapter ground line of the first adapter structure 241 is formed by extending the MS ground line 242b of the MS structure, and the side of the first adapter ground line close to the CPW structure has a step-like changing edge. The length of the first adapter ground line in the second direction Y decreases in a step-like manner along the direction away from the MS structure. The second adapter ground line is formed by extending the CPW ground line 232b of the CPW structure, and the side of the second adapter ground line close to the MS structure has a step-like changing edge. The length of the second transfer ground wire in the second direction Y increases in a step-like manner along the direction away from the MS structure. The projection of the signal transfer wire 241a on the dielectric substrate is located within the projection of the first transfer ground wire on the dielectric substrate. The intersection of the projections of the first transfer ground wire and the second transfer ground wire on the dielectric substrate is in a step-like shape. For the rest of the structure of the first transfer unit, please refer to Figure 6A The embodiment shown in FIG. 1 is not described in detail here. Figure 6AThe provided first transition unit Figure 6B The provided first transition unit can avoid the abrupt change of the electric field from the MS structure to the CPW structure, thereby reducing the differential loss.

[0074] Figure 6C Another structural schematic diagram of the first transition unit according to at least one embodiment of the present disclosure. Figure 6C Shown is a top view of the first transition unit. In some exemplary embodiments, as Figure 6C shown, the signal transfer line 241a of the first transition structure 241 has a gradually changing edge along the first direction X, the first transfer ground line has a gradually changing edge on the side close to the CPW structure, and the second transfer ground line has a gradually changing edge on the side close to the MS structure. The remaining structure of the first transition unit in this exemplary embodiment can refer to Figure 6B the embodiment shown, so it will not be elaborated here.

[0075] Figure 6D Another structural schematic diagram of the first transition unit according to at least one embodiment of the present disclosure. Figure 6D Shown is a top view of the first transition unit. In some exemplary embodiments, as Figure 6D shown, the first transition structure 241 may include a grounded coplanar waveguide (GCPW) structure. Among them, the first transition structure 241 includes: a signal transfer line 241a and a second transfer ground line located on the first surface of the dielectric substrate, and a first transfer ground line located on the second surface of the dielectric substrate. The first transfer ground line is formed by extending the MS ground line 242b of the MS structure, and the second transfer ground line is formed by extending the CPW ground line 232b of the CPW structure. The second transfer ground line is located on opposite sides of the signal transfer line 241a. The length of the signal transfer line 241a along the second direction Y is greater than the length of the MS signal line 242a of the MS structure along the second direction Y, and greater than the length of the CPW signal line 232a of the CPW structure along the second direction Y. The projection of the signal transfer line 241a on the dielectric substrate is located within the projection of the first transfer ground line on the dielectric substrate. This exemplary embodiment can better achieve the transition between the CPW structure and the MS structure by using a GCPW.

[0076] In some exemplary embodiments, the second transition unit is connected between the CPW structure and the MS structure to achieve the conversion from the CPW structure to the MS structure. The second transition unit and the first transition unit may be mirror structures with respect to the center line of the MEMS phase shift multi-unit along the first direction X. However, this embodiment is not limited thereto.

[0077] In some exemplary embodiments, the second impedance transformation unit and the first impedance transformation unit may be mirror structures with respect to the center line of the MEMS phase shift multi-unit along the first direction X. However, this embodiment is not limited thereto.

[0078] Figure 7 Another structural schematic diagram of the phased array antenna element according to at least one embodiment of the present disclosure. Figure 8 is Figure 7 The top view of the phased array antenna element shown. In some exemplary embodiments, the dielectric substrate of the phased array antenna element is glass, and the feeding method of the feeding structure is the slot coupling feeding method. However, the material of the dielectric substrate is not limited in this embodiment.

[0079] Such as Figure 7 and Figure 8 As shown, the phased array antenna element of this exemplary embodiment includes: a first transition unit 24, a first impedance transformation unit 23, a MEMS phase shift multi-unit 21, a second impedance transformation unit 25, a second transition unit 26, an antenna 22, and a slot coupling structure 27. The first transition unit 24 realizes the conversion from the MS structure to the CPW structure, and may include, for example, a first transition structure 241 and an MS structure 242. The second transition unit 26 realizes the conversion from the CPW structure to the MS structure. The first impedance transformation unit 23 includes a first impedance structure 232 and a first impedance transformation structure 231. The second impedance transformation unit 25 includes a second impedance unit 252 and a second impedance transformation structure 251. The first impedance transformation unit 23 and the second impedance transformation unit 25 are mirror images with respect to the center line of the MEMS phase shift multi-unit 21. The antenna 22 may be a patch antenna. The antenna 22 includes an antenna signal line 221 and an antenna ground line 222. The antenna 22 and the second transition unit 26 may share the MS ground (GND) provided on a first circuit board (for example, a printed circuit board (PCB)). The first transition unit 24 and the slot coupling structure 27 may share the MS ground provided on a second circuit board. Regarding the structures of the first impedance transformation unit, the second impedance transformation unit, the MEMS phase shift multi-unit, the first transition unit, and the second transition unit, reference may be made to the foregoing embodiments, and thus will not be elaborated herein.

[0080] In some exemplary embodiments, such as Figure 7 and Figure 8As shown, the slot coupling structure 27 is connected to the feeding structure. The slot coupling structure 27 is an MS structure, and feeds the first adapter unit 24 by slot coupling. The first adapter unit 24 includes a first adapter structure 241 and an MS structure 242. The MS structure 242 includes an MS signal line 242a located on the first surface of the dielectric substrate 200 and an MS ground line 242b located on the second surface of the dielectric substrate 200. In this example, the MS ground line 242b is arranged on the second circuit substrate, and the MS ground line 242b has a slot 30, and the slot 30 is, for example, rectangular. The slot coupling structure 27 includes an MS signal line 271 located on the side of the second circuit substrate away from the MS ground line 242b. The MS signal line 271 and the MS signal line 242a share the MS ground line 242b. The projection of the MS signal line 271 on the dielectric substrate 200 overlaps with the projection of the MS signal line 242a on the dielectric substrate 200, and the overlapping portion of the two is located within the projection of the slot 30 on the dielectric substrate 300. In this exemplary embodiment, slot coupling feeding is achieved through coupling between MS signal line 271 and MS signal line 242a.

[0081] Figure 9 Another schematic diagram of the structure of a phased array antenna element according to at least one embodiment of the present disclosure. Figure 10 for Figure 9 A top view of a phased array antenna element is shown in FIG. In this exemplary embodiment, the dielectric substrate 200 of the phased array antenna element may be glass, and the feeding method of the feeding structure is a direct feeding method. Figure 9 and Figure 10 As shown, the phased array antenna element of this exemplary embodiment includes: a MEMS phase shift multi-unit 21, an antenna 22, a first impedance transformation unit 23, a second impedance transformation unit 25 and a second switching unit 26. The second switching unit 26 realizes the conversion from the CPW structure to the MS structure. The first impedance transformation unit 23 includes a first impedance structure 232 and a first impedance transformation structure 231. The second impedance transformation unit 25 includes a second impedance unit 252 and a second impedance transformation structure 251. The first impedance transformation unit 23 and the second impedance transformation unit 25 are mirror images relative to the center line of the MEMS phase shift multi-unit 21. The antenna 22 can be a patch antenna. The antenna 22 and the second switching unit 26 can share the MS ground line set on the first circuit substrate. The structures of the first impedance transformation unit, the second impedance transformation unit, the MEMS phase shift multi-unit and the second switching unit can refer to the above embodiments, so they are not repeated here. In this exemplary embodiment, the first impedance structure 232 can be directly connected to the SMA corresponding to the CPW structure pin to achieve direct feeding.

[0082] Figures 11A to 11D for Figure 9Schematic diagram of simulation results of phased array antenna elements shown. Figure 11B and Figure 11D The abscissa of is the elevation angle θ, representing the angle formed with the z-axis, and the ordinate is the actual gain. Figure 11B and Figure 11D The solid line in represents the azimuth angle degrees, and the curve of the actual gain values corresponding to different values of θ for the phased array antenna elements, that is, the radiation pattern in the xoz plane. Similarly, Figure 11B and 11D The dashed line in represents the azimuth angle degrees, and the curve of the actual gain values corresponding to different values of θ for the phased array antenna elements, that is, the radiation pattern in the yoz plane.

[0083] Figure 11A and Figure 11B are Figure 9 The curve graph of the S11 parameter of the direct feed port and the planar radiation pattern when all the metal bridges in the MEMS phase-shifting multi-unit in are in the open (Up) state (that is, no driving voltage is applied to the metal bridge). As Figure 11A and Figure 11B shown, when all the metal bridges in the MEMS phase-shifting multi-unit are in the open (Up) state, when the S11 parameter is less than -6 dB and -10 dB, the impedance bandwidth of the phased array antenna elements is 15.7 GHz to 19.7 GHz, and the actual gain of -0.52 dB can be achieved. The 3 dB beam widths in the xoz plane and the yoz plane are 94 degrees and 86 degrees respectively.

[0084] Figure 11C and Figure 11D are Figure 9 The curve graph of the S11 parameter of the direct feed port and the planar radiation pattern when all the metal bridges in the MEMS phase-shifting multi-unit in are in the closed (Down) state (that is, a driving voltage is applied to the metal bridge). As Figure 11C and Figure 11D shown, when all the metal bridges in the MEMS phase-shifting multi-unit are in the closed (Down) state, when the S11 parameter is less than -6 dB, the impedance bandwidth of the phased array antenna elements is 15.7 GHz to 19.7 GHz; when the S11 parameter is less than -10 dB, the impedance bandwidth of the phased array antenna elements is 15.7 GHz to 18.76 GHz, and the actual gain of -4.39 dB can be achieved. The 3 dB beam widths in the xoz plane and the yoz plane are 80 degrees and 56 degrees respectively.

[0085] Figure 12 This is another structural schematic diagram of the phased array antenna element of at least one embodiment of the present disclosure. As Figure 12As shown, the phased array antenna element of this exemplary embodiment includes: a MEMS phase-shifting multi-unit 21, an antenna 22, a first impedance transformation unit 23, a first switching unit 24, and a second switching unit 26. The first switching unit 24 is connected between the feeding structure 10 and the first impedance transformation unit 23, the MEMS phase-shifting multi-unit 21 is connected between the first impedance transformation unit 23 and the second switching unit 26, and the second switching unit 26 is connected between the MEMS phase-shifting multi-unit 21 and the antenna 22. In some examples, the MEMS phase-shifting multi-unit 21 includes a CPW structure with a characteristic impedance greater than 50 ohms. For example, the characteristic impedance of the CPW structure in the MEMS phase-shifting multi-unit can be 100 ohms. However, this embodiment is not limited to this. The structures of the MEMS phase-shifting multi-unit, the first impedance transformation unit, the first switching unit, and the second switching unit can refer to the aforementioned embodiments, so they are not repeated here.

[0086] Figure 13 FIG. 1 is a schematic diagram of a structure of a phased array antenna element according to at least one embodiment of the present disclosure. Figure 3 As shown, the phased array antenna element of this exemplary embodiment includes: a MEMS phase-shifting multi-unit 21, an antenna 22, a first impedance transformation unit 23, and a second impedance transformation unit 25. The first impedance transformation unit 23 is connected between the feeding structure 10 and the MEMS phase-shifting multi-unit 21, the MEMS phase-shifting multi-unit 21 is connected between the first impedance transformation unit 23 and the second impedance transformation unit 25, and the second impedance transformation unit 25 is connected to the antenna 22. In some examples, the MEMS phase-shifting multi-unit 21 includes a CPW structure with a characteristic impedance greater than 50 ohms. For example, the characteristic impedance of the CPW structure in the MEMS phase-shifting multi-unit can be 100 ohms. However, this embodiment is not limited to this. The structures of the MEMS phase-shifting multi-unit, the first impedance transformation unit, and the second impedance transformation unit can refer to the aforementioned embodiments, so they are not repeated here.

[0087] Figure 14 FIG. 1 is another schematic diagram of the structure of a phased array antenna element according to at least one embodiment of the present disclosure. Figure 14 As shown, the phased array antenna element of this exemplary embodiment includes: a MEMS phase-shifting multi-unit 21, an antenna 22, a first impedance transformation unit 23 and a first switching unit 24. The first switching unit 24 is connected between the feeding structure 10 and the first impedance transformation unit 23, and the MEMS phase-shifting multi-unit 21 is connected between the first impedance transformation unit 23 and the antenna 22. In some examples, the MEMS phase-shifting multi-unit 21 includes a CPW structure with a characteristic impedance greater than 50 ohms. For example, the characteristic impedance of the CPW structure in the MEMS phase-shifting multi-unit can be 100 ohms. However, this embodiment is not limited to this. The structures of the MEMS phase-shifting multi-unit, the first impedance transformation unit and the first switching unit can refer to the aforementioned embodiments, so they are not repeated here.

[0088] Figure 15 Another structural schematic diagram of the phased array antenna element according to at least one embodiment of the present disclosure. As Figure 15 shown, the phased array antenna element of the present exemplary embodiment includes: a MEMS phase shifter multi-unit 21, an antenna 22, and a first impedance transformation unit 23. The first impedance transformation unit 23 is connected between the feeding structure 10 and the MEMS phase shifter multi-unit 21, and the MEMS phase shifter multi-unit 21 is connected to the antenna 22. In some examples, the MEMS phase shifter multi-unit 21 includes a CPW structure with a characteristic impedance greater than 50 ohms. For example, the characteristic impedance of the CPW structure in the MEMS phase shifter multi-unit can be 100 ohms. However, the present embodiment is not limited thereto. The structures of the MEMS phase shifter multi-unit and the first impedance transformation unit can refer to the foregoing embodiments, and thus will not be elaborated herein.

[0089] Figure 16 Schematic diagram of an electronic device according to at least one embodiment of the present disclosure. As Figure 16 shown, the present embodiment provides an electronic device 91, including: a phased array antenna system 910. The phased array antenna system 910 is the phased array antenna system provided in the foregoing embodiment. The electronic device 91 can be: a smart phone, a navigation device, a game console, a television (TV), a car audio, a tablet computer, a personal multimedia player (PMP), a personal digital assistant (PDA), or any product or component with a communication function. However, the present embodiment is not limited thereto.

[0090] The drawings in the present disclosure only relate to the structures involved in the present disclosure, and other structures can refer to the general design. Without conflict, the embodiments of the present disclosure and the features in the embodiments can be combined with each other to obtain new embodiments.

[0091] Those of ordinary skill in the art should understand that the technical solutions of the present disclosure can be modified or equivalently replaced without departing from the spirit and scope of the technical solutions of the present disclosure, and all should be covered by the scope of the claims of the present disclosure.

Claims

1. A phased array antenna system, comprising: A feeding structure and at least one phased array antenna element, wherein the at least one phased array antenna element comprises: a first impedance transformation unit, a MEMS phase shift multi-unit and an antenna; The first impedance transformation unit is connected to the feeding structure, and the MEMS phase shift multi-unit is connected between the first impedance transformation unit and the antenna; The MEMS phase shift multi-unit includes at least sixteen phase shift units, at least one phase shift unit includes a coplanar waveguide signal line and a coplanar waveguide ground line located on the same surface of a dielectric substrate, an insulating layer covering the coplanar waveguide signal line, and a metal bridge located on a side of the insulating layer away from the dielectric substrate, the metal bridge spanning the coplanar waveguide signal line; the coplanar waveguide signal lines of the sixteen phase shift units are connected in sequence; the projection of the metal bridge on the dielectric substrate overlaps with both the coplanar waveguide signal line and the coplanar waveguide ground line; The metal bridge is configured to deform toward a side close to the coplanar waveguide signal line after a driving voltage is applied, so as to change the distance between the metal bridge and the coplanar waveguide signal line.

2. The phased array antenna system according to claim 1, wherein, The MEMS phase-shifting multi-unit comprises a coplanar waveguide structure with a characteristic impedance greater than 50 ohms.

3. The phased array antenna system according to claim 1 or 2, wherein, The at least one phased array antenna element further includes: at least one switching unit, which is connected to the first impedance transformation unit or the MEMS phase shift multi-unit and is configured to achieve conversion between a microstrip structure and a coplanar waveguide structure.

4. The phased array antenna system according to claim 3, wherein, The at least one switching unit includes: a first switching unit, which is connected between the feeding structure and the first impedance transformation unit and is configured to achieve conversion from a microstrip structure to a coplanar waveguide structure.

5. The phased array antenna system according to claim 3, wherein, The at least one switching unit includes: a second switching unit, which is connected between the MEMS phase-shifting multi-unit and the antenna and is configured to achieve conversion from a coplanar waveguide structure to a microstrip structure.

6. The phased array antenna system according to claim 1, wherein The at least one phased array antenna element further includes: a second impedance transformation unit, and the second impedance transformation unit is connected between the MEMS phase shift multi-unit and the antenna.

7. The phased array antenna system according to claim 1, wherein The first impedance transformation unit at least includes: a first impedance transformation structure connected between two coplanar waveguide structures with different characteristic impedances; The characteristic impedance Z1 of the first impedance transformation structure and the characteristic impedances Z2 and Z3 of the two coplanar waveguide structures connected to the first impedance transformation structure satisfy the following relationship: ； Alternatively, the first impedance transformation structure is a gradual transition structure connected between two coplanar waveguide structures with different characteristic impedances.

8. The phased array antenna system according to claim 3, wherein, The at least one switching unit comprises: a switching structure connected between the microstrip structure and the coplanar waveguide structure; The transfer structure includes a signal transfer line arranged on a first surface of a dielectric substrate and a first transfer ground line arranged on a second surface of the dielectric substrate opposite to the first surface; the signal transfer line is connected between the microstrip signal line of the microstrip structure and the coplanar waveguide signal line of the coplanar waveguide structure, the first transfer ground line is formed by extending the microstrip ground line of the microstrip structure, and the projection of the signal transfer line on the dielectric substrate is located within the projection of the first transfer ground line on the dielectric substrate.

9. The phased array antenna system according to claim 8, wherein, The transfer structure further includes: a second transfer ground wire arranged on the first surface of the dielectric substrate; the second transfer ground wire is formed by extending the coplanar waveguide ground wire of the coplanar waveguide structure; The signal adapter line of the adapter structure has a step-changing edge along the extension direction, the first adapter ground line has a step-changing edge on the side close to the coplanar waveguide structure, and the second adapter ground line has a step-changing edge on the side close to the microstrip structure; or, the signal adapter line of the adapter structure has a gradually changing edge along the extension direction, the first adapter ground line has a gradually changing edge on the side close to the coplanar waveguide structure, and the second adapter ground line has a gradually changing edge on the side close to the microstrip structure.

10. The phased array antenna system according to claim 3, wherein, The at least one switching unit includes: a switching structure connected between the microstrip structure and the coplanar waveguide structure, and the switching structure includes a grounded coplanar waveguide structure.

11. The phased array antenna system according to claim 4, further comprising: A slot coupling structure, wherein the slot coupling structure is connected to the feeding structure and is configured to feed the first switching unit through slot coupling.

12. The phased array antenna system according to claim 1, wherein, The feeding structure comprises: a feeding unit; The feeding unit comprises: a DC power supply, a vector network analyzer, a DC block, a T-type bias device and a radio frequency coaxial connector SMA; the DC block is connected to the vector network analyzer, the T-type bias device is connected between the DC block and the SMA, the DC power supply is connected to the T-type bias device, and the SMA is connected to the phased array antenna element; Alternatively, the feeding unit includes: a DC power supply, a vector network analyzer, a control circuit, a flexible circuit board and an SMA; the control circuit is connected to the DC power supply, the flexible circuit board is connected between the control circuit and the phased array antenna element, and the SMA is connected between the vector network analyzer and the phased array antenna element.

13. The phased array antenna system according to claim 12, wherein, The feeding structure further includes: a power division network, wherein the power division network is connected between the feeding unit and a plurality of phased array antenna elements.

14. An electronic device comprising the phased array antenna system according to any one of claims 1 to 13.

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