A temperature-sensitive and pressure-sensitive integrated sensor, probe and preparation method thereof

Abstract

The present invention discloses a temperature-sensitive and pressure-sensitive integrated sensor, a probe and a preparation method thereof. The temperature-sensitive and pressure-sensitive integrated sensor of the present invention includes a substrate with an elastic film. A pressure-sensitive component is provided on the area of the elastic film. A temperature-sensitive resistor is provided on the substrate outside the elastic film. Two temperature-sensitive pads are provided on the substrate. The temperature-sensitive resistor and at least one temperature-sensitive pad are connected by a temperature-conducting and electrically-conducting connection film. The temperature-conducting and electrically-conducting connection film includes a double-layer structure formed by compounding a bonding layer and a heat-conducting and electrically-conducting layer. The heat-conducting and electrically-conducting layer is laminated on the surface of the bonding layer. The present invention aims to solve the problem that the temperature value sensed by the temperature-sensitive resistor is different from the actual temperature on the pressure-sensitive component, and can effectively improve the accuracy of the temperature on the pressure-sensitive component detected by the temperature-sensitive resistor, so as to perform temperature compensation on the pressure and improve the accuracy of pressure detection, and has the advantages of high integration, simple structure, easy processing and installation.

Description

Technical Field

[0001] The present invention relates to a multi-functional sensing integration technology, and more particularly to a temperature-sensitive and pressure-sensitive integrated sensor, a probe and a preparation method thereof. Background Art

[0002] In many systems, it is necessary to measure two signals of pressure and temperature simultaneously, such as automotive air-conditioning systems, diesel engine high-pressure common rail systems, etc. Most traditional measurement methods use two independent sensors for measurement, resulting in a complex and unreliable system. In recent years, some temperature-pressure integrated sensors have been invented, realizing the intensification and miniaturization of sensors. However, these temperature-pressure integrated sensors still have two problems: (1) Although two sensitive elements are encapsulated in a single housing, usually two measurement channels or cavities are required, one for placing the temperature-sensitive element and the other for connecting the pressure-sensitive element to the measured medium. This structure is complex to process and cumbersome to install. (2) The temperature-sensitive element and the pressure-sensitive element are separated by a relatively large distance or are not tightly combined, resulting in heat loss and time difference during heat conduction, so that the temperature value sensed by the temperature-sensitive element is different from the true temperature on the pressure-sensitive element. Therefore, if the temperature value output by the temperature-sensitive element is used to compensate the temperature of the pressure-sensitive element, it is not very accurate. Summary of the Invention

[0003] The technical problem to be solved by the present invention: In view of the above problems of the prior art, a temperature-sensitive and pressure-sensitive integrated sensor, a probe and a preparation method thereof are provided. The present invention aims to solve the problem that the temperature value sensed by the temperature-sensitive resistor is different from the true temperature on the pressure-sensitive component, and can effectively improve the accuracy of the temperature detected by the temperature-sensitive resistor on the pressure-sensitive component, have better temperature dynamic response ability and temperature change response speed, so as to facilitate temperature compensation for pressure, improve the accuracy of pressure detection, and have the advantages of high integration, simple structure, easy processing and installation.

[0004] To solve the above technical problems, the technical solution adopted by the present invention is:

[0005] A temperature-sensitive and pressure-sensitive integrated sensor includes a substrate with an elastic membrane, a pressure-sensitive component is provided on the area of the elastic membrane, a temperature-sensitive resistor is provided on the substrate outside the elastic membrane, two temperature-sensitive pads are provided on the substrate, and a temperature-conducting and electrically conductive connection film is connected between the temperature-sensitive resistor and at least one temperature-sensitive pad. One of the two temperature-sensitive pads is shared with the pressure-sensitive component, so that the temperature-sensitive resistor forms a temperature conduction channel in direct contact with the pressure-sensitive component through the temperature-conducting and electrically conductive connection film and the shared temperature-sensitive pad, and the substrate constitutes another temperature conduction channel formed by indirect contact between the temperature-sensitive resistor and the pressure-sensitive component.

[0006] Optionally, the heat-conducting and electrically conductive connection film comprises a bilayer structure formed by compounding a bonding layer and a heat-conducting and electrically conductive layer, and the heat-conducting and electrically conductive layer is laminated on the surface of the bonding layer.

[0007] Optionally, the thermistor and the substrate are connected and fixed through an adhesive material layer doped with heat-conducting material particles.

[0008] Optionally, the bonding layer is made of a polymer silver conductive paste through drying and sintering.

[0009] Optionally, the heat-conducting and electrically conductive layer is made of a nano-silver paste through drying and sintering.

[0010] In addition, the present invention also provides a thermo-sensitive and pressure-sensitive integrated sensing probe, comprising a housing and a thermo-sensitive and pressure-sensitive integrated sensor disposed in the housing, and the thermo-sensitive and pressure-sensitive integrated sensor is the thermo-sensitive and pressure-sensitive integrated sensor described above.

[0011] In addition, the present invention also provides a preparation method of the thermo-sensitive and pressure-sensitive integrated sensor described above, comprising:

[0012] 1) Preparing a varistor of a pressure-sensitive component on a substrate by a sputtering process;

[0013] 2) Adhering a thermistor to the substrate;

[0014] 3) Preparing a bonding layer between the thermistor and the thermo-sensitive pad on the substrate;

[0015] 4) Preparing a heat-conducting and electrically conductive layer on the bonding layer;

[0016] 5) Preparing a sealing layer on the surface of the heat-conducting and electrically conductive layer to prevent oxidation of the bonding layer and the heat-conducting and electrically conductive layer.

[0017] Optionally, step 3) includes:

[0018] 3.1) Roughing the area B where the bonding layer needs to be prepared between the thermistor and the thermo-sensitive pad on the substrate;

[0019] 3.2) Coating a polymer silver conductive paste on the area B;

[0020] 3.3) Drying the polymer silver conductive paste;

[0021] 3.4) Sintering the dried polymer silver conductive paste.

[0022] Optionally, step 4) includes:

[0023] 4.1) Ultrasonically oscillating the nano-silver paste to disperse the nano-particles therein;

[0024] 4.2) Coat the nano silver paste after ultrasonic oscillation on the bonding layer;

[0025] 4.3) Dry the nano silver paste;

[0026] 4.4) Sinter the dried nano silver paste.

[0027] Optionally, drying means performing low-temperature drying in an environment below one hundred degrees Celsius to avoid the formation of voids due to water vapor during the subsequent sintering process.

[0028] Compared with the prior art, the present invention has the following advantages:

[0029] 1. The present invention realizes the integration of temperature and pressure detection at the sensor level, avoiding two discrete sensitive elements, with a simple structure, which is easy for the mechanical processing and installation of the sensor housing.

[0030] 2. Between the thermistor and at least one thermosensitive pad of the present invention, they are connected by a temperature-conducting and electrically-conducting connection film. One of the two thermosensitive pads is shared with the pressure-sensitive component, so that the thermistor forms a temperature conduction channel in direct contact with the pressure-sensitive component through the temperature-conducting and electrically-conducting connection film and the shared thermosensitive pad. The substrate constitutes another temperature conduction channel formed by the indirect contact between the thermistor and the pressure-sensitive component. Thus, two temperature conduction channels are formed between the thermistor and the pressure-sensitive component, which can effectively solve the problem that the temperature value sensed by the thermistor is different from the actual temperature on the pressure-sensitive component, can effectively improve the accuracy of the temperature detected by the thermistor on the pressure-sensitive component, has better temperature dynamic response ability and temperature change response speed, is convenient for temperature compensation of pressure, improves the accuracy of pressure detection, and has the advantages of high integration, simple structure, easy processing and installation. Description of the Drawings

[0031] Figure 1 It is a schematic structural diagram of the temperature-sensitive and pressure-sensitive integrated sensor in the embodiment of the present invention.

[0032] Figure 2 It is a schematic structural diagram of the substrate in the embodiment of the present invention.

[0033] Figure 3 It is a schematic diagram of the layered structure of the temperature-conducting and electrically-conducting connection film in the embodiment of the present invention.

[0034] Figure 4 It is a schematic structural diagram of the connection between the thermistor and the substrate in the embodiment of the present invention.

[0035] Legend: 1. Substrate; 10. Surface; 101. Main body; 102. Brim structure; 11. Elastic film; 12. Temperature-sensitive pad; 13. Pressure-sensitive pad; 2. Pressure-sensitive component; 3. Temperature-sensitive resistor; 31. Adhesive material layer; 4. Temperature-conducting and electrically-conductive connection film; 41. Bonding layer; 42. Heat-conducting and electrically-conductive layer. Detailed implementation

[0036] As Figure 1 shown, the temperature-sensitive and pressure-sensitive integrated sensor of this embodiment includes a substrate 1 with an elastic film 11. A pressure-sensitive component 2 is provided in the area of the elastic film 11. A temperature-sensitive resistor 3 is provided outside the elastic film 11 on the substrate 1. Two temperature-sensitive pads 12 are provided on the substrate 1. The temperature-sensitive resistor 3 and at least one temperature-sensitive pad 12 are connected by a temperature-conducting and electrically-conductive connection film 4. One of the two temperature-sensitive pads 12 is shared with the pressure-sensitive component 2, so that the temperature-sensitive resistor 3 forms a temperature conduction channel in direct contact with the pressure-sensitive component 2 through the temperature-conducting and electrically-conductive connection film 4 and the shared temperature-sensitive pad 12. The substrate 1 constitutes another temperature conduction channel formed by indirect contact between the temperature-sensitive resistor 3 and the pressure-sensitive component 2. Thus, two temperature conduction channels are formed between the temperature-sensitive resistor 3 and the pressure-sensitive component 2, making the substrate 1, the temperature-sensitive resistor 3, the pressure-sensitive component 2, and the temperature-conducting and electrically-conductive connection film 4 form an isothermal body, which can effectively solve the problem that the temperature value sensed by the temperature-sensitive resistor 3 is different from the actual temperature on the pressure-sensitive component 2, can effectively improve the accuracy of the temperature of the pressure-sensitive component 2 detected by the temperature-sensitive resistor 3, has better temperature dynamic response ability and temperature change response speed, so as to perform temperature compensation on the pressure (for providing temperature parameters), improve the accuracy of pressure detection, and has the advantages of high integration, simple structure, easy processing and installation.

[0037] In this embodiment, the substrate 1 is a metal substrate and is provided with an insulating silicon dioxide thin film by the sputtering thin film process. The elastic film 11 is a metal elastic film. However, the temperature-sensitive and pressure-sensitive integrated sensor of this embodiment does not depend on the specific material of the substrate 1, nor on the specific material of the elastic film 11. See Figure 2 , as a specific implementation, in this embodiment, the surface 10 of the substrate 1 is the bearing part of the temperature-sensitive resistor 3, the pressure-sensitive component 2, and the temperature-conducting and electrically-conductive connection film 4. The main body 101 of the substrate 1 is in the shape of a hollow cylinder, and its interior is used to communicate with the medium to be detected. A brim structure 102 is provided on the side wall of the main body 101. The substrate 1, its elastic film 11, the main body 101, and the brim structure 102 are all integrally formed by stainless steel material.

[0038] In this embodiment, the pressure-sensitive component 2 uses a metal sputtering thin film pressure-sensitive chip. See Figure 1, the metal sputtering thin film varistor chip is a Wheatstone bridge composed of resistors R1 to R4. The Wheatstone bridge is connected to the varistor pad 13 on the annular surface of the support column and the shared temperature-sensitive pad 12 through varistor leads. It should be noted that the temperature-sensitive and varistor integrated sensor in this embodiment does not depend on the specific structure of the varistor component 2. Refer to Figure 3 As can be seen, among the four connection terminals of the Wheatstone bridge, three connection terminals are each connected to a varistor pad 13, and the remaining one connection terminal is connected to the temperature-sensitive pad 12 shared with the temperature-sensitive resistor 3.

[0039] In this embodiment, the temperature-sensitive resistor 3 is in the shape of a thin sheet, with a highly thermally conductive ceramic material as the substrate. A serpentine resistance wire is formed on the substrate, and the thickness of the resistor sheet is less than 1 mm. By the thin-sheet shape of the substrate, the contact area between the temperature-sensitive resistor 3 and the base body 1 can be increased, which is more conducive to heat conduction between them. End electrodes are respectively made at both ends of the temperature-sensitive resistor 3. The end electrodes include an electrode front, an electrode side, and an electrode back, and the electrode front, the electrode side, and the electrode back are connected to form an equipotential body. The temperature-sensitive resistor 3 is located outside the elastic film 11 on the base body 1 and cannot be in direct contact with the elastic film 11 to avoid affecting the stress of the elastic film 11 and causing inaccurate pressure detection by the varistor component 2.

[0040] The purpose of the temperature-conducting and electrically conductive connection film 4 is to achieve temperature conduction and electrical conductivity. Therefore, a metal or similar material that can achieve the above functions can be used according to needs through a single-layer or multi-layer structure. As an alternative embodiment, as Figure 3 shown, in this embodiment, the temperature-conducting and electrically conductive connection film 4 includes a double-layer structure formed by the composite of a bonding layer 41 and a thermally and electrically conductive layer 42. The thermally and electrically conductive layer 42 is laminated on the surface of the bonding layer 41. Through the double-layer structure, the bonding layer 41 can focus on achieving high bonding force, and the thermally and electrically conductive layer 42 can focus on achieving high thermally and electrically conductive ability, so that the advantages of both high bonding force and high thermally and electrically conductive ability can be achieved.

[0041] In this embodiment, the bonding layer 41 is made of a polymer silver conductive paste through drying and sintering. By adding a polymer, the silver conductive paste (silver paste) can have better bonding force, so cracks are not likely to appear. However, the addition of the polymer reduces the thermal and electrical conductivity of the silver paste. Therefore, in this embodiment, an additional thermally and electrically conductive layer 42 is used to improve the thermal and electrical conductivity. The polymer can select the required materials and components according to needs.

[0042] In this embodiment, the thermally and electrically conductive layer 42 is made by drying and sintering a nano silver paste. The nano silver paste has a high silver content, so its thermal conductivity and electrical conductivity are very high. However, due to the lack of a high molecular polymer, its bonding strength with the substrate 1 is poor, and cracks are likely to appear during sintering. Therefore, in this embodiment, it is used as a supplement to the bonding layer 41, so as to achieve a balance between high thermal and electrical conductivity and high bonding strength. Among them, the nano silver paste refers to a paste liquid doped with silver nanoparticles, and the paste liquid can be water-based or oil-based. For example, in this embodiment, a water-based paste is specifically used.

[0043] The bonding layer 41 can be regarded as a transition layer of the thermally and electrically conductive layer 42. First, the bonding layer 41 contains a high molecular polymer, so it has a good bonding strength with the substrate 1. And because the substances and properties of the nano silver paste and the high molecular polymer silver conductive paste are similar, there is also a good bonding strength between the bonding layer 41 and the thermally and electrically conductive layer 42. Second, since cracks are not likely to appear in the bonding layer 41, and the thermally and electrically conductive layer 42 adheres tightly to the bonding layer 41, the probability of cracking of the originally easily cracked thermally and electrically conductive layer 42 is reduced. Third, even if a small number of cracks appear in the thermally and electrically conductive layer 42, the bonding layer 41 provides a backup channel for heat conduction and electricity conduction, and although the performance decreases, it will not fail.

[0044] In order to prevent the temperature and electricity conducting connection film 4 from being oxidized, in this embodiment, a sealing layer is also coated on the outside of the temperature and electricity conducting connection film 4. For example, in this embodiment, epoxy resin for sealing is specifically coated.

[0045] It should be noted that the temperature-sensitive resistor 3 can be selected according to needs for the bonding method with the substrate 1. For example, it can be directly formed on the substrate 1 by sputtering, or it can be pre-prepared and then bonded to the substrate 1. As Figure 4 shown, as an optional implementation manner, in this embodiment, the temperature-sensitive resistor 3 is pre-prepared and then bonded to the substrate 1. The temperature-sensitive resistor 3 and the substrate 1 are connected and fixed through a bonding material layer 31 doped with thermally conductive material particles. Through the bonding material layer 31 doped with thermally conductive material particles, better thermal performance can be achieved between the temperature-sensitive resistor 3 and the substrate 1, making the temperature-sensitive sensor have a fast response and high accuracy, further solving the problem that the temperature value sensed by the temperature-sensitive resistor is different from the actual temperature on the pressure-sensitive component, improving the accuracy of the temperature detected by the temperature-sensitive resistor on the pressure-sensitive component, having better temperature dynamic response ability and temperature change response speed, so as to perform temperature compensation on the pressure and improve the accuracy of pressure detection, and having the advantages of high integration, simple structure, easy processing and installation. Considering the problem of a relatively large porosity of single-sized thermally conductive material particles, in order to reduce the porosity of the thermally conductive material particles, improve the thermal conductivity and pressure resistance of the bonding material layer 31, as Figure 4As shown, the heat-conducting material particles include at least two types of heat-conducting material particles with different particle sizes, and the heat-conducting material particles with different particle sizes are evenly or randomly distributed in the bonding material layer 31. Due to the different particle sizes, the small particles can fill the gaps between the large particles, resulting in better heat-conducting performance and better pressure resistance. See Figure 4 It can be seen that as an alternative embodiment, in this embodiment, the heat-conducting material particles include two types of heat-conducting material particles with different particle sizes, and the two types of heat-conducting material particles with different particle sizes are evenly or randomly distributed in the bonding material layer 31, so that the small heat-conducting material particles fill the gaps between the large heat-conducting material particles, thereby effectively reducing the porosity of the heat-conducting material particles and improving the heat-conducting performance of the bonding material layer 31. In this embodiment, the bonding material in the bonding material layer 31 is a high-temperature-resistant epoxy resin adhesive, which can withstand high temperatures for a long time > 200 °C. In addition, other high-temperature-resistant bonding materials can also be used according to needs. Considering that the bonding material layer 31 needs to maintain the insulating property, the heat-conducting material particles can be various insulating heat-conducting material particles according to needs. For example, considering that ceramic particles have good insulation and high heat conductivity, the heat-conducting material particles in this embodiment are made of heat-conducting ceramic materials. Based on the characteristics of good insulation and high heat conductivity of ceramic particles, in this embodiment, the two types of heat-conducting material particles with different particle sizes are respectively selected as nano-aluminum oxide particles and sub-micron boron nitride particles.

[0046] In addition, this embodiment also provides a temperature-sensitive and pressure-sensitive integrated sensing probe, including a housing and a temperature-sensitive and pressure-sensitive integrated sensor disposed in the housing. The temperature-sensitive and pressure-sensitive integrated sensor is the temperature-sensitive and pressure-sensitive integrated sensor described above in this embodiment.

[0047] This embodiment also provides a preparation method for the temperature-sensitive and pressure-sensitive integrated sensor described above, including:

[0048] 1) Prepare the varistor of the pressure-sensitive component 2 on the substrate 1 by a sputtering process;

[0049] 2) Adhere the temperature-sensitive resistor 3 to the substrate 1;

[0050] 3) Prepare the bonding layer 41 between the temperature-sensitive resistor 3 and the temperature-sensitive pad 12 on the substrate 1;

[0051] 4) Prepare the heat-conducting and conductive layer 42 on the bonding layer 41;

[0052] 5) Prepare a sealing layer on the surface of the heat-conducting and conductive layer 42 to prevent the bonding layer 41 and the heat-conducting and conductive layer 42 from being oxidized.

[0053] Among them, when adhering the temperature-sensitive resistor 3 to the substrate 1 in step 2), high thermal conductivity epoxy resin is generally used. However, for general high thermal conductivity epoxy resins, the thermal conductive particles are mixed with the epoxy resin in advance. But when the content of the doped thermal conductive particles is very high or the storage time is too long, the thermal conductive particles will precipitate or agglomerate, resulting in performance degradation. In this embodiment, in step 2), the temperature-sensitive resistor 3 is adhered to the substrate 1 by a dual-nozzle method, where one nozzle sprays the epoxy resin and the other nozzle sprays the thermal conductive particles, so that the epoxy resin and the thermal conductive particles are combined only during the spraying process, improving the mixing uniformity. And immediately after doping, the epoxy resin is cured, so the particle doping degree can be very high and the thermal conductivity is better. In addition, in this embodiment, the nozzle for spraying the thermal conductive particles contains two kinds of thermal conductive particles with different particle sizes, and the method of matching large particles and small particles is adopted. The small particles can fill the gaps between the large particles, having better thermal conductivity and pressure resistance.

[0054] In this embodiment, step 3) includes:

[0055] 3.1) Roughen the area B where the bonding layer 41 needs to be prepared between the temperature-sensitive resistor 3 and the temperature-sensitive pad 12 on the substrate 1; for example, in this embodiment, the surface 1 of the substrate 1 is bombarded with plasma for 1 min, and fluorine-based gas CF4 is added during the bombardment process to form a microscopically concave-convex shape on the surface of the substrate 1, enhancing the contact area with the polymer silver conductive paste and better forming the adhesion; then, the surface of the substrate 1 is cleaned with plasma for 10 min.

[0056] 3.2) Coat the polymer silver conductive paste in area B; according to the predetermined shape of the heat-conducting and electric-conducting connection film 4, coat the polymer silver conductive paste in area B.

[0057] 3.3) Dry the polymer silver conductive paste; as an optional implementation method, drying means performing low-temperature drying in an environment below 100 °C to avoid the formation of voids by water vapor during the subsequent sintering process, which can achieve the purpose of improving the bonding force. The temperature of the low-temperature drying can be selected as needed. For example, in this embodiment, low-temperature drying is performed in an environment of 60 °C.

[0058] 3.4) Sinter the dried polymer silver conductive paste. For example, in this embodiment, it is placed in a sintering furnace and sintered at 150 ° for 30 min.

[0059] In this embodiment, step 4) includes:

[0060] 4.1) Ultrasonically oscillate the nano silver paste to disperse the nano particles therein; in this embodiment, a water-based nano silver paste is used for the highly conductive and thermally conductive layer. This nano silver paste is prepared by chemical reduction and centrifugal separation and concentration methods, has a very high silver content, and does not contain organic polymers to improve the conductivity and thermal conductivity and reduce the sintering temperature.

[0061] 4.2) Coat the ultrasonically oscillated nano silver paste on the bonding layer 41; since the content of the dispersant in the nano silver paste is small, the nano silver particles may agglomerate in advance, resulting in a decrease in sintering quality. Therefore, ultrasonically oscillate to disperse the nano particles between drying and sintering. In this embodiment, the water-based nano silver paste is put into an ultrasonic cleaner for ultrasonic oscillation, with a power of 300 W and an oscillation time of 20 min. In this embodiment, in order to improve the thermal and electrical conductivity of the thermally and electrically conductive layer 42, the bonding layer 41 after coating the ultrasonically oscillated nano silver paste is also cleaned by plasma cleaning method for 10 min.

[0062] 4.3) Dry the nano silver paste; as an alternative embodiment, drying means low-temperature drying in an environment below 100 °C to avoid the formation of voids by water vapor during the subsequent sintering process, which can achieve the purpose of improving the thermal and electrical conductivity. The temperature of low-temperature drying can be selected as needed. For example, in this embodiment, low-temperature drying is carried out in an environment of 80 °C.

[0063] 4.4) Sinter the dried nano silver paste. Specifically, in this embodiment, it is put into a sintering furnace and sintered at 200 °C for 20 min.

[0064] Finally, a sealing layer is prepared on the surface of the prepared thermally and electrically conductive layer 42 in step 5) to prevent the bonding layer 41 and the prepared thermally and electrically conductive layer 42 from being oxidized. For example, in this embodiment, epoxy resin for sealing is coated.

[0065] The above is only the preferred embodiment of the present invention. The protection scope of the present invention is not limited to the above embodiments. All technical solutions within the idea of the present invention belong to the protection scope of the present invention. It should be pointed out that for those of ordinary skill in the art, without departing from the principle of the present invention, several improvements and refinements should also be regarded as the protection scope of the present invention.

Claims

1. A temperature-sensitive and pressure-sensitive integrated sensor, comprising a substrate (1) with an elastic membrane (11), wherein a pressure-sensitive component (2) is provided on the area of the elastic membrane (11), characterized in that, A thermistor (3) is provided outside the elastic membrane (11) on the substrate (1). Two thermosensitive pads (12) are provided on the substrate (1). The thermistor (3) is connected to at least one thermosensitive pad (12) through a temperature-conducting and electrically-conducting connection film (4). One of the two thermosensitive pads (12) is shared with the pressure-sensitive component (2), so that the thermistor (3) forms a temperature conduction channel in direct contact with the pressure-sensitive component (2) through the temperature-conducting and electrically-conducting connection film (4) and the shared thermosensitive pad (12). The substrate (1) constitutes another temperature conduction channel formed by indirect contact between the thermistor (3) and the pressure-sensitive component (2). The temperature-conducting and electrically-conducting connection film (4) includes a double-layer structure formed by the composite of a bonding layer (41) and a heat-conducting and electrically-conducting layer (42). The heat-conducting and electrically-conducting layer (42) is laminated on the surface of the bonding layer (41).

2. The temperature-sensitive and pressure-sensitive integrated sensor according to claim 1, wherein The thermistor (3) is fixedly connected to the substrate (1) through an adhesive material layer (31) doped with heat-conducting material particles.

3. The temperature-sensitive and pressure-sensitive integrated sensor according to claim 1, characterized in that, The bonding layer (41) is made of a polymer silver conductive paste through drying and sintering.

4. The temperature-sensitive and pressure-sensitive integrated sensor according to claim 1, wherein The heat-conducting and electrically-conducting layer (42) is made of a nano-silver paste through drying and sintering.

5. A temperature-sensitive and pressure-sensitive integrated sensing probe, comprising a housing and a temperature-sensitive and pressure-sensitive integrated sensor disposed in the housing, characterized in that, The temperature-sensitive and pressure-sensitive integrated sensor is the temperature-sensitive and pressure-sensitive integrated sensor according to any one of claims 1 to 4.

6. A method for preparing the temperature-sensitive and pressure-sensitive integrated sensor according to any one of claims 1 to 4, characterized in that, Including: 1) Preparing a pressure-sensitive resistor of the pressure-sensitive component (2) on the substrate (1) by a sputtering process; 2) Adhering the thermistor (3) to the substrate (1); 3) Preparing a bonding layer (41) between the thermistor (3) and the thermosensitive pad (12) on the substrate (1); 4) Preparing a heat-conducting and electrically-conducting layer (42) on the bonding layer (41); 5) Preparing a sealing layer on the surface of the heat-conducting and electrically-conducting layer (42) to prevent the bonding layer (41) and the heat-conducting and electrically-conducting layer (42) from being oxidized.

7. The preparation method of the temperature-sensitive and pressure-sensitive integrated sensor according to claim 6, characterized in that, Step 3) includes: 3.1) Roughening the area B where the bonding layer (41) needs to be prepared between the thermistor (3) and the thermosensitive pad (12) on the substrate (1); 3.2) Coating a polymer silver conductive paste on the area B; 3.3) Drying the polymer silver conductive paste; 3.4) Sintering the dried polymer silver conductive paste.

8. The preparation method of the temperature-sensitive and pressure-sensitive integrated sensor according to claim 6, wherein, Step 4) includes: 4.1) Ultrasonically oscillating the nano-silver paste to disperse the nano-particles therein; 4.2) Coating the ultrasonically oscillated nano-silver paste on the bonding layer (41); 4.3) Drying the nano-silver paste; 4.4) Sintering the dried nano-silver paste.

9. The preparation method of the temperature-sensitive and pressure-sensitive integrated sensor according to claim 7 or 8, characterized in that The drying refers to low-temperature drying in an environment below one hundred degrees Celsius to avoid the formation of voids by water vapor during the subsequent sintering process.

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