Substrate Processing Apparatus and Substrate Processing Method

Abstract

A substrate processing apparatus (1) according to one aspect of the present disclosure includes a control unit (61). The control unit (61) executes a first process and a second process in parallel. The first process and the second process are two processes including a first transfer process of transferring a substrate from a transfer unit (14) to a liquid processing unit (17), a liquid processing performed by the liquid processing unit (17), a second transfer process of transferring the substrate from the liquid processing unit (17) to a drying processing unit (18), and a drying processing performed by the drying processing unit (18). Among them, the processing times of at least the liquid processing and the drying processing are different between the first process and the second process. When the execution of the second process for a second substrate among a plurality of substrates is started during the execution of the first process for a first substrate among the plurality of substrates, the control unit (61) determines the start timing of the first transfer process for the second substrate in such a manner that the period of the second transfer process for the first substrate does not overlap with the period of the second transfer process for the second substrate.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. Background Art

[0002] Conventionally, there has been known a substrate processing apparatus that forms a liquid film for preventing drying on the surface of a semiconductor wafer (hereinafter referred to as a wafer) or the like as a substrate, and brings the wafer having the liquid film formed thereon into contact with a processing fluid in a supercritical state to perform a drying process.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2013-12538 Summary of the Invention

[0006] Problems to be Solved by the Invention

[0007] The present disclosure provides a technique capable of suppressing a deviation in the transfer time of a wafer having a liquid film formed on its surface even when a plurality of processes having different processing times are executed in parallel.

[0008] Solutions to the Problems

[0009] A substrate processing apparatus according to one aspect of the present disclosure includes a transfer section, a plurality of liquid processing sections, a plurality of drying processing sections, a transfer section, and a control section. The transfer section can accommodate a plurality of substrates. The plurality of liquid processing sections are configured to form a liquid film on the surface of a substrate. The plurality of drying processing sections bring a substrate having a liquid film formed on its surface into contact with a supercritical fluid to dry the substrate. The transfer section transfers the substrate. The control section controls the transfer section, the plurality of liquid processing sections, the plurality of drying processing sections, and the transfer section to execute a first process and a second process in parallel. The first process and the second process are two processes including a first transfer process of transferring a substrate from the transfer section to the liquid processing section, a liquid process performed by the liquid processing section, a second transfer process of transferring the substrate from the liquid processing section to the drying processing section, and a drying process performed by the drying processing section. At least the processing times of the liquid process and the drying process are different between the first process and the second process. Further, when the execution of the second process for a second substrate among the plurality of substrates is started during the execution of the first process for a first substrate among the plurality of substrates, the control section determines the start timing of the first transfer process for the second substrate such that the period of the second transfer process for the first substrate does not overlap with the period of the second transfer process for the second substrate.

[0010] Effects of the Invention

[0011] According to the present disclosure, even when a plurality of processes with different processing times are executed in parallel, it is possible to suppress a deviation in the transfer time of a wafer having a liquid film formed on its surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 is a schematic cross-sectional view obtained by observing the substrate processing system according to the embodiment from above.

[0013] Figure 2 is a schematic cross-sectional view obtained by observing the substrate processing system according to the embodiment from the side.

[0014] Figure 3 is a side view showing the structure of the transfer device according to the embodiment.

[0015] Figure 4 is a diagram showing a structural example of the liquid processing unit.

[0016] Figure 5 is a diagram showing a structural example of the drying unit.

[0017] Figure 6 is a flowchart showing a series of substrate processing procedures executed in the substrate processing system according to the embodiment.

[0018] Figure 7 is a timing chart for explaining the adjustment process of the start timing of the subsequent process according to the embodiment.

[0019] Figure 8 is a timing chart for explaining an example of the adjustment process of the start timing of the subsequent process considering the prohibited transfer period.

[0020] Figure 9 is a timing chart for explaining an example of a method for determining the start timing of the first transfer process between the same processes.

[0021] Figure 10 is a timing chart for explaining an example of a method for determining the priority when two processes can be started and executed.

[0022] Figure 11 is a diagram showing an example of transfer time information.

[0023] Figure 12 is a flowchart showing an example of the process of the third transfer process. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0024] Next, with reference to the drawings, a mode (hereinafter referred to as "embodiment") for implementing the substrate processing apparatus and the substrate processing method of the present disclosure will be described in detail. In addition, the substrate processing apparatus and the substrate processing method of the present disclosure are not limited by this embodiment. In addition, the respective embodiments can be appropriately combined within a range where the processing contents do not conflict. In addition, in the following respective embodiments, the same reference numerals are assigned to the same parts, and repeated descriptions are omitted.

[0025] In addition, in each of the drawings referred to below, in order to make the description easier to understand, an orthogonal coordinate system is sometimes shown in which the X-axis direction, the Y-axis direction, and the Z-axis direction that are orthogonal to each other are defined, and the positive direction of the Z-axis is the vertically upward direction. In addition, the rotation direction around the vertical axis is sometimes referred to as the θ direction.

[0026] In addition, in the embodiments shown below, expressions such as "fixed", "orthogonal", "perpendicular", or "parallel" are sometimes used, but these expressions do not necessarily have to be "fixed", "orthogonal", "perpendicular", or "parallel". That is, the above-mentioned respective expressions allow for deviations in manufacturing accuracy, setting accuracy, etc.

[0027] Conventionally, a substrate processing apparatus is known in which a liquid film for preventing drying is formed on the surface of a semiconductor wafer (hereinafter referred to as a wafer) or the like as a substrate, and the wafer on which the liquid film is formed is brought into contact with a processing fluid in a supercritical state to perform a drying process.

[0028] However, when transporting other wafers at the timing of transporting a wafer having a liquid film formed on its surface to the next drying unit, the wafer having the liquid film formed thereon must wait until the transport process of the other wafers is completed.

[0029] Moreover, when the state of the liquid film on the wafer surface changes, such as drying of the liquid film, during the standby period, defects such as pattern collapse formed on the wafer may occur in the subsequent drying process, and thus the yield of the wafer may decrease.

[0030] In particular, when multiple processes with different processing times are to be executed in parallel, the above-mentioned overlapping of wafer transfer timings is likely to occur.

[0031] Therefore, it is desired to suppress deviations in the transfer time of a wafer having a liquid film formed on its surface even when multiple processes with different processing times are executed in parallel.

[0032] <Structure of the substrate processing system>

[0033] First, refer to Figure 1 and Figure 2 to describe the structure of the substrate processing system 1 (an example of a substrate processing apparatus) according to the embodiment.Figure 1 FIG. Figure 1 is a schematic cross-sectional view of the substrate processing system 1 according to the embodiment, as viewed from above. Additionally, Figure 2 FIG. Figure 2 is a schematic cross-sectional view of the substrate processing system 1 according to the embodiment, as viewed from the side.

[0034] As Figure 1 shown, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 is disposed adjacent to the processing station 3.

[0035] The loading / unloading station 2 includes a carrier placement unit 11 and a transfer unit 12. A plurality of carriers C are placed on the carrier placement unit 11, and the plurality of carriers C accommodate a plurality of semiconductor wafers W (hereinafter referred to as "wafer W") in a horizontal state.

[0036] The substrate processing system 1 according to the embodiment performs substrate processing of different processes on two types of wafers W (hereinafter referred to as "wafer WA" and "wafer WB"). Therefore, a plurality of (here, two) carriers CA for accommodating a plurality of wafer WA and a plurality of (here, two) carriers CB for accommodating a plurality of wafer WB are placed on the carrier placement unit 11.

[0037] For example, one of wafer WA and wafer WB is a wafer W whose surface (pattern formation surface) contains metal, and the other is a wafer W whose surface does not contain metal. In addition, wafer WA and wafer WB only need to be wafers W with different processing times for the liquid processing and drying processing described later included in at least the process. That is, the "different types" mentioned here not only refer to different surface structures, but also belong to "different types" if the processing times of the liquid processing and drying processing are different although the surface structures are the same (that is, although they are the same type of wafer).

[0038] The transfer unit 12 is disposed adjacent to the carrier placement unit 11. A transfer device 13 and a transfer section 14 are disposed inside the transfer unit 12. As Figure 2 shown, the transfer section 14 includes a transfer section 14A capable of accommodating a plurality of wafer WA in multiple layers and a transfer section 14B capable of accommodating a plurality of wafer WB in multiple layers. The transfer section 14A and the transfer section 14B are arranged in the vertical direction (Z-axis direction).

[0039] The transfer device 13 includes a wafer holding mechanism for holding the wafer W. The transfer device 13 can move in the horizontal direction and the vertical direction, and can rotate about the vertical axis. The transfer device 13 uses the wafer holding mechanism to transfer the wafer W between the carrier C and the transfer section 14.

[0040] Specifically, as Figure 2As shown, the transfer device 13 includes a first holding portion 131A for holding the wafer WA and a second holding portion 131B for holding the wafer WB. The transfer device 13 can horizontally move the first holding portion 131A and the second holding portion 131B independently.

[0041] The processing station 3 is disposed adjacent to the transfer device 12. The processing station 3 includes a transfer block 4 and a plurality of processing blocks 5.

[0042] The transfer block 4 includes a transfer area 15 and a transfer device 16. The transfer area 15 is, for example, a rectangular parallelepiped-shaped area extending in the arrangement direction (X-axis direction) of the loading / unloading station 2 and the processing station 3. The transfer device 16 is disposed in the transfer area 15.

[0043] The transfer device 16 includes a wafer holding mechanism for holding the wafer W. The transfer device 16 can move in the horizontal direction and the vertical direction, and can rotate about the vertical axis. The transfer device 16 uses the wafer holding mechanism to transfer the wafer W between the transfer portion 14 and the plurality of processing blocks 5. Here, refer to Figure 3 to describe the structure of the transfer device 16. Figure 3 FIG. is a side view showing the structure of the transfer device 16 according to the embodiment.

[0044] As Figure 3 shown, the transfer device 16 according to the embodiment includes a first holding portion 161A, a second holding portion 161B, a first advancing / retreating mechanism 162A, a second advancing / retreating mechanism 162B, a lifting mechanism 163, and a horizontal movement mechanism 164.

[0045] The first holding portion 161A is for holding the wafer WA. The second holding portion 161B is disposed, for example, below the first holding portion 161A and is for holding the wafer WB. The first holding portion 161A and the second holding portion 161B each include, for example, a flat base portion having a bifurcated shape with a lateral width smaller than the diameter of the wafer W, and a plurality of support members provided on the surface of the base portion. The first holding portion 161A and the second holding portion 161B horizontally hold the wafer W by supporting the wafer W from below using the plurality of support members.

[0046] The first advancing / retreating mechanism 162A moves the first holding portion 161A forward and backward in the horizontal direction. Specifically, the first advancing / retreating mechanism 162A moves the first holding portion 161A forward and backward in the Y-axis direction orthogonal to the extending direction of the transfer area 15. The second advancing / retreating mechanism 162B moves the second holding portion 161B forward and backward in the Y-axis direction.

[0047] The lifting mechanism 163 moves the first advancing / retreating mechanism 162A and the second advancing / retreating mechanism 162B in the vertical direction to lift the first holding portion 161A and the second holding portion 161B. The horizontal movement mechanism 164 moves the lifting mechanism 163 in the X-axis direction to horizontally move the first holding portion 161A and the second holding portion 161B in the extending direction of the transfer area 15.

[0048] A plurality of processing blocks 5 are arranged adjacent to the transfer area 15 on one side of the transfer area 15. As Figure 1 and Figure 2 shown, specifically, the plurality of processing blocks 5 include a plurality of processing blocks 5A for processing the wafer WA and a plurality of processing blocks 5B for processing the wafer WB. The processing blocks 5A are arranged on one side (the positive Y-axis direction side) of the transfer area 15 in the direction (Y-axis direction) orthogonal to the arrangement direction (X-axis direction) of the loading / unloading station 2 and the processing station 3, and the processing blocks 5B are arranged on the other side (the negative Y-axis direction side). In addition, as Figure 2 shown, the plurality of processing blocks 5A are arranged in multiple layers (three layers in this case) in the vertical direction. Similarly, the plurality of processing blocks 5B are also arranged in multiple layers (three layers in this case) in the vertical direction.

[0049] The transfer of the wafer W between the processing blocks 5 arranged on each layer and the transfer portion 14 is performed by one transfer device 16 arranged on the transfer block 4.

[0050] Each processing block 5A includes a liquid processing unit 17 and a drying unit 18. Similarly, each processing block 5B also includes a liquid processing unit 17 and a drying unit 18.

[0051] After the liquid processing unit 17 performs a cleaning process of cleaning the upper surface of the wafer W as the pattern formation surface, it performs a liquid film formation process of forming a liquid film on the upper surface of the wafer W after the cleaning process. The cleaning process and the liquid film formation process are examples of liquid processing. The structure of the liquid processing unit 17 will be described later.

[0052] The drying unit 18 performs a drying process on the wafer W after the liquid film formation process. Specifically, the drying unit 18 dries the wafer W by bringing the wafer W after the liquid film formation process into contact with a processing fluid in a supercritical state (hereinafter, also referred to as "supercritical fluid"). The structure of the drying unit 18 will be described later.

[0053] In addition, although in Figure 1 and Figure 2Illustrations are omitted, but the substrate processing system 1 may further include a supply unit that supplies a processing fluid to the drying unit 18. The supply unit includes a set of supply devices including a flow meter, a flow regulator, a back pressure valve, a heater, etc., and a housing for housing the set of supply devices. In an embodiment, the supply unit supplies CO2 to the drying unit 18 as the processing fluid.

[0054] The liquid processing unit 17 and the drying unit 18 are arranged along the transfer area 15 (i.e., along the X-axis direction). Among the liquid processing unit 17 and the drying unit 18, the liquid processing unit 17 is arranged closer to the loading / unloading station 2, and the drying unit 18 is arranged farther from the loading / unloading station 2.

[0055] In this way, each processing block 5 includes one liquid processing unit 17 and one drying unit 18 respectively. That is, the same number of liquid processing units 17 and drying units 18 are provided in the substrate processing system 1.

[0056] As Figure 1 shown, the substrate processing system 1 includes a control device 6. The control device 6 is, for example, a computer, and includes a control unit 61 and a storage unit 62.

[0057] The control unit 61 includes a microcomputer having a CPU (Central Processing Unit), a ROM (ReadOnly Memory), a RAM (Random Access Memory), input / output ports, etc., and various circuits. The CPU of the microcomputer controls the transfer devices 13 and 16, the liquid processing unit 17, the drying unit 18, etc. by reading and executing a program stored in the ROM.

[0058] In addition, the program is stored in a computer-readable storage medium and installed from the storage medium into the storage unit 62 of the control device 6. Examples of the computer-readable storage medium include a hard disk (HD), a floppy disk (FD), a compact disc (CD), a magneto-optical disc (MO), a memory card, etc.

[0059] The storage unit 62 is implemented, for example, by semiconductor storage elements such as a RAM and a flash memory, or storage devices such as a hard disk and an optical disc.

[0060] <Structure of the Liquid Processing Unit>

[0061] Next, with reference to Figure 4 the structure of the liquid processing unit 17 will be described. Figure 4 is a diagram showing a structural example of the liquid processing unit 17. The liquid processing unit 17 is configured, for example, as a single-sheet cleaning device that cleans the wafers W one by one by rotational cleaning.

[0062] As Figure 4 shown, the liquid processing unit 17 holds the wafer W substantially horizontally by the wafer holding mechanism 25, and rotates the wafer W by rotating the wafer holding mechanism 25 about the vertical axis. The wafer holding mechanism 25 is disposed in the outer chamber 23 that forms the processing space.

[0063] Moreover, the liquid processing unit 17 moves the nozzle arm 26 above the rotating wafer W, and performs a cleaning process on the upper surface of the wafer W by supplying a chemical solution and a rinse liquid in a predetermined order from the chemical solution nozzle 26a provided at the tip of the nozzle arm 26.

[0064] In addition, a chemical solution supply path 25a is also formed inside the liquid processing unit 17 and the wafer holding mechanism 25. Moreover, the lower surface of the wafer W is also cleaned by the chemical solution and the rinse liquid supplied from the chemical solution supply path 25a.

[0065] The cleaning process can include, for example, removing fine particles and organic contaminants using a chemical solution, removing pre-oxides, and performing a rinse cleaning using a rinse liquid (deionized water (hereinafter referred to as "DIW")). In the liquid processing unit 17 for processing the wafer WA and the liquid processing unit 17 for processing the wafer WB, for example, the types of chemical solutions used, the supply time of the chemical solutions, etc. are different.

[0066] The above various chemical solutions are received by the outer chamber 23 and the inner cup 24 disposed in the outer chamber 23, and are discharged from the drain port 23a provided at the bottom of the outer chamber 23 and the drain port 24a provided at the bottom of the inner cup 24. And the atmosphere gas in the outer chamber 23 is exhausted from the exhaust port 23b provided at the bottom of the outer chamber 23.

[0067] After the rinse process in the cleaning process, a liquid film forming process is performed. Specifically, the liquid processing unit 17 supplies liquid IPA (hereinafter, also referred to as "IPA liquid") to the upper surface and the lower surface of the wafer W while rotating the wafer holding mechanism 25. Thereby, the DIW remaining on the two surfaces of the wafer W is replaced with IPA. After that, the liquid processing unit 17 slowly stops the rotation of the wafer holding mechanism 25.

[0068] The wafer W that has completed the liquid film forming process is transferred to the transfer device 16 in a state where a liquid film of IPA liquid is formed on its upper surface through a transfer mechanism (not shown) provided in the wafer holding mechanism 25, and is carried out from the liquid processing unit 17.

[0069] The liquid film formed on the wafer W prevents pattern collapse due to evaporation (vaporization) of the liquid on the upper surface of the wafer W during the transfer of the wafer W from the liquid processing unit 17 to the drying unit 18 and during the loading operation into the drying unit 18. In addition, the processing time of the liquid film forming process may be different in the liquid processing unit 17 that processes the wafer WA and the liquid processing unit 17 that processes the wafer WB.

[0070] <Structure of the drying unit>

[0071] Next, refer to Figure 5 to describe the structure of the drying unit 18. Figure 5 It is a diagram showing an example of the structure of the drying unit 18.

[0072] As Figure 5 shown, the drying unit 18 includes a main body 31, a holding plate 32, and a lid member 33. An opening 34 for loading and unloading the wafer W is formed in the housing-shaped main body 31. The holding plate 32 holds the wafer W to be processed in the horizontal direction. The lid member 33 supports the holding plate 32 and seals the opening 34 when the wafer W is loaded into the main body 31.

[0073] The main body 31 is a container having a processing space inside that can accommodate a wafer W with a diameter of, for example, 300 mm. A supply port 35, 36 and a discharge port 37 are provided in the wall portion of the main body 31. The supply ports 35, 36 and the discharge port 37 are respectively connected to a supply flow path and a discharge flow path for allowing a supercritical fluid to flow into the drying unit 18.

[0074] The supply port 35 is connected to the side of the housing-shaped main body 31 opposite to the opening 34. In addition, the supply port 36 is connected to the bottom surface of the main body 31. And the discharge port 37 is connected to the lower side of the opening 34. In addition, Figure 5 two supply ports 35, 36 and one discharge port 37 are shown in the figure, but the number of the supply ports 35, 36 and the discharge port 37 is not particularly limited.

[0075] In addition, a fluid supply head 38, 39 and a fluid discharge head 40 are provided inside the main body 31. Moreover, a plurality of supply ports are formed along the length direction of the fluid supply head 38, 39, and a plurality of discharge ports are formed along the length direction of the fluid discharge head 40.

[0076] The fluid supply head 38 is connected to the supply port 35 and is disposed adjacent to the side surface opposite to the opening 34 inside the housing-shaped main body 31. In addition, the plurality of supply ports formed in the fluid supply head 38 face the opening 34 side.

[0077] The fluid supply head 39 is connected to the supply port 36 and is disposed at the central portion of the bottom surface inside the housing-shaped main body 31. In addition, a plurality of supply ports formed in the fluid supply head 39 face upward.

[0078] The fluid discharge head 40 is connected to the discharge port 37 and is disposed inside the housing-shaped main body 31 at a position adjacent to the side surface closer to the opening portion 34 and below the opening portion 34. In addition, a plurality of discharge ports formed in the fluid discharge head 40 face upward.

[0079] The fluid supply heads 38 and 39 supply supercritical fluid into the main body 31. In addition, the fluid discharge head 40 guides and discharges the supercritical fluid inside the main body 31 to the outside of the main body 31. Furthermore, the supercritical fluid discharged to the outside of the main body 31 via the fluid discharge head 40 contains IPA liquid after dissolving into the supercritical fluid from the surface of the wafer W.

[0080] In this drying unit 18, the IPA liquid between the patterns formed on the wafer W gradually dissolves into the supercritical fluid by contacting with the supercritical fluid in a high-pressure state (e.g., 16 MPa), thereby gradually replacing the space between the patterns with the supercritical fluid. Eventually, only the supercritical fluid fills the space between the patterns.

[0081] Moreover, after removing the IPA liquid from between the patterns, the pressure inside the main body 31 is reduced from the high-pressure state to the atmospheric pressure, whereby CO2 changes from the supercritical state to the gaseous state, and only the gas occupies the space between the patterns. By doing so, the IPA liquid between the patterns is removed, and the drying process of the wafer W is completed.

[0082] Here, in addition to having a viscosity smaller than that of a liquid (e.g., IPA liquid) and a high ability to dissolve liquids, there is no interface between the supercritical fluid and the liquid and gas in an equilibrium state. Therefore, in the drying process using the supercritical fluid, the liquid can be dried without being affected by the surface tension. Thus, according to the embodiment, pattern collapse can be suppressed during the drying process.

[0083] In the liquid processing unit 17 for processing the wafer WA and the liquid processing unit 17 for processing the wafer WB, at least the processing time of the above drying process is different.

[0084] In addition, in the embodiment, an example is shown in which IPA liquid is used as the liquid for preventing drying and supercritical CO2 is used as the processing fluid, but a liquid other than IPA can be used as the liquid for preventing drying, and a fluid other than supercritical CO2 can be used as the processing fluid.

[0085] <Substrate Processing Flow>

[0086] Next, referring toFigure 6 The processing flow of the wafer W in the substrate processing system 1 described above will be described. Figure 6 It is a flowchart showing a series of substrate processing processes executed in the substrate processing system 1 according to the embodiment. It is executed under the control of the control unit 61 Figure 6 the series of substrate processing shown.

[0087] In addition, here, as an example, the process of a series of substrate processing performed on one wafer W is shown. In the substrate processing system 1, a series of substrate processing shown is performed on a plurality of wafers WA and a plurality of wafers WB in parallel. Figure 6 the series of substrate processing shown.

[0088] In the substrate processing system 1, first, the transfer device 13 takes out the wafer W from the carrier C and places it on the transfer part 14 (step S101). Specifically, the transfer device 13 takes out the wafer WA from the carrier CA using the first holding part 131A, and places the taken-out wafer WA on the transfer part 14A. In addition, the transfer device 13 takes out the wafer WB from the carrier CB using the second holding part 131B, and places the taken-out wafer WB on the transfer part 14B.

[0089] Next, a first transfer process is performed in the substrate processing system 1 (step S102). The first transfer process is a process in which the transfer device 16 takes out the wafer W from the transfer part 14 and transfers it to the liquid processing unit 17. Specifically, the transfer device 16 takes out the wafer WA from the transfer part 14A using the first holding part 161A, and transfers the taken-out wafer WA to the liquid processing unit 17 of the processing block 5A. In addition, the transfer device 16 takes out the wafer WB from the transfer part 14B using the second holding part 161B, and transfers the taken-out wafer WB to the liquid processing unit 17 of the processing block 5B.

[0090] Next, in the substrate processing system 1, liquid processing is performed in the liquid processing unit 17 (step S103). Specifically, the liquid processing unit 17 removes fine particles, natural oxide films, etc. from the upper surface of the wafer W, for example, by supplying various processing liquids to the upper surface of the wafer W as the pattern formation surface. Next, the liquid processing unit 17 supplies IPA liquid to the upper surface of the wafer W after the cleaning process, thereby forming a liquid film on the upper surface of the wafer W using the IPA liquid.

[0091] Next, a second transfer process is performed in the substrate processing system 1 (step S104). The second transfer process is a process in which the transfer device 16 takes out the wafer W having a liquid film formed on its surface from the liquid processing unit 17 and transfers it to the drying unit 18. Specifically, the transfer device 16 takes out the wafer WA from the liquid processing unit 17 using the first holding unit 161A, and transfers the taken-out wafer WA to the drying unit 18 of the processing block 5A. In addition, the transfer device 16 takes out the wafer WB from the liquid processing unit 17 using the second holding unit 161B, and transfers the taken-out wafer WB to the drying unit 18 of the processing block 5B.

[0092] Next, in the substrate processing system 1, a drying process is performed in the drying unit 18 (step S105). In the drying process, the drying unit 18 dries the wafer W by bringing the wafer W having a liquid film formed on its surface into contact with a supercritical fluid.

[0093] Next, a third transfer process is performed in the substrate processing system 1 (step S106). The third transfer process is a process in which the transfer device 16 takes out the wafer W after the drying process from the drying unit 18 and transfers it to the transfer section 14. Specifically, the transfer device 16 takes out the wafer WA from the drying unit 18 using the first holding unit 161A, and places the taken-out wafer WA on the transfer section 14A. In addition, the transfer device 16 takes out the wafer WB from the drying unit 18 using the second holding unit 161B, and places the taken-out wafer WB on the transfer section 14B.

[0094] Next, in the substrate processing system 1, the transfer device 13 takes out the wafer W from the transfer section 14 and transfers it out to the carrier C (step S108). Specifically, the transfer device 13 takes out the wafer WA from the transfer section 14A using the first holding unit 131A, and places the taken-out wafer WA on the carrier CA. In addition, the transfer device 13 takes out the wafer WB from the transfer section 14B using the second holding unit 131B, and places the taken-out wafer WB on the carrier CB. When this transfer-out process is completed, a series of substrate processes for one wafer W are completed.

[0095] As described above, in the substrate processing system 1, the above-described series of substrate processes are performed in parallel for a plurality of wafers WA and a plurality of wafers WB. In the series of substrate processes for the wafer WA (steps S101 to S107) and the series of substrate processes for the wafer WB (steps S101 to S107), at least the processing times of the liquid processing (step S103) and the drying processing (step S105) are different.

[0096] Here, when the transfer device 16 is performing a transfer process on another wafer W at the timing of performing the second transfer process on the wafer W after the liquid processing, the wafer W having a liquid film formed thereon must wait until the transfer process on the other wafer W is completed.

[0097] Moreover, when the state of the liquid film on the surface of the wafer W changes during the standby period, such as the drying of the liquid film, defects such as pattern collapse formed on the wafer W may occur during the subsequent drying process, so the yield of the wafer W may decrease. In particular, in the case where multiple processes with different processing times are to be executed in parallel as in the substrate processing system 1 according to the embodiment, such an overlap of transfer timings is likely to occur.

[0098] Therefore, in the embodiment, the start timing of the first transfer process for the second substrate is determined in such a way that the period of the second transfer process for the preceding wafer W (e.g., wafer WA) does not overlap with the period of the second transfer process for the subsequent wafer W (e.g., wafer WB).

[0099] Thereby, it is possible to suppress the transfer process of the wafer WB by the transfer device 16 at the timing of the second transfer process for the wafer WA after the liquid processing. In other words, it is possible to suppress the standby time for the wafer WA after the liquid processing. Thus, according to the substrate processing system 1 according to the embodiment, it is possible to suppress the deviation in the transfer time of the wafer having a liquid film formed on its surface, that is, the time from the completion of the liquid processing to the time of being transferred into the drying unit 18.

[0100] <Details of the start timing adjustment process for the subsequent process>

[0101] Reference Figure 7 to specifically illustrate this point. Figure 7 is a timing chart for explaining the start timing adjustment process for the subsequent process according to the embodiment. The process shown is executed under the control of the control unit 61. Figure 7 shown process.

[0102] Hereinafter, a series of substrate processes performed on the wafer WA will be referred to as "process A", and a series of substrate processes performed on the wafer WB will be referred to as "process B". In Figure 7 shows an example of a timing chart for executing process A and process B in parallel.

[0103] Figure 7 The timing chart example of "process A" shown shows the case where the wafers WA1 and WA2 are processed in the order of the wafers WA1 and WA2 in a set of liquid processing units 17A1 and drying units 18A1 arranged in the processing block 5A. In addition, Figure 7 The timing chart example of "process B" shown shows the case where a plurality of wafers WB1 and WB2 are processed in the order of the wafers WB1 and WB2 in a set of liquid processing units 17B1 and drying units 18B1 arranged in the processing block 5B.

[0104] In addition, in Figure 7In this case, the processing section for the liquid processing of wafer WA1 in the liquid processing unit 17A1 is denoted as "WA1", and the processing section for the liquid processing of wafer WA2 is denoted as "WA2". Further, the processing section for the drying process of wafer WA1 in the liquid processing performed in the drying unit 18A1 is denoted as "WA1", and the processing section for the drying process of wafer WA2 is denoted as "WA2". The same applies to the liquid processing unit 17B1 and the drying unit 18B1, where the processing section for wafer WB1 is denoted as "WB1", and the processing section for wafer WB2 is denoted as "WB2".

[0105] In addition, in Figure 7 this case, the processing section for the first transfer process is denoted as "S1", the processing section for the second transfer process is denoted as "S2", and the processing section for the third transfer process is denoted as "S3".

[0106] For example, it is assumed that when the liquid processing of wafer WA1 is performed in the liquid processing unit 17A1, it becomes possible to start the process B for wafer WB1. In this case, if it is desired to immediately start the process B for wafer WB1, the second transfer process for wafer WA1 and the second transfer process for wafer WB1 may overlap according to the timing at which they become executable.

[0107] Therefore, after starting the first transfer process for the earlier wafer WA1 and before starting the first transfer process for the later wafer WB1, the control unit 61 determines the start timing of the first transfer process for wafer WB1 according to the following procedure.

[0108] First, the control unit 61 determines the estimated execution period of the second transfer process for wafer WA1 based on the processing times of the first transfer process, the liquid processing, and the second transfer process for wafer WA1. Specifically, the processing times of the first transfer process, the liquid processing, and the second transfer process for wafer WA1 are all known. Moreover, the control unit 61 can determine the estimated start timing t2 of the second transfer process for wafer WA1 as the time point after the processing times of the first transfer process and the liquid processing have elapsed since the start timing t1 of the first transfer process for wafer WA1. In addition, the control unit 61 can determine the period from the estimated start timing t2 until the processing time of the second transfer process has elapsed as the estimated execution period of the second transfer process for wafer WA1.

[0109] In addition, the control unit 61 determines the implementation period of the second transfer process for the wafer WB1 predicted when assuming that the first transfer process for the wafer WB1 has started, based on the processing times of the first transfer process, the liquid processing, and the second transfer process for the wafer WB1. Specifically, the processing times of the first transfer process, the liquid processing, and the second transfer process for the wafer WB1 are all known. The control unit 61 can, for example, determine the predicted start timing t3 of the second transfer process for the wafer WB1 as the time point after the processing times of the first transfer process and the liquid processing have elapsed since the timing when it becomes possible to start executing Process B for the wafer WB1. In addition, the control unit 61 can determine the period from the predicted start timing t3 until the processing time of the second transfer process has elapsed as the predicted implementation period of the second transfer process for the wafer WB1.

[0110] Next, the control unit 61 determines whether the interval between the predicted start timing t2 of the second transfer process for the wafer WA1 and the predicted start timing t3 of the second transfer process for the wafer WB1 is less than a preset interval time I. The interval time I is set to a time that is at least longer than the processing time of the second transfer process.

[0111] Moreover, when the above interval is less than the interval time I, the control unit 61 determines the timing that makes the above interval equal to or greater than the interval time I as the start timing t4 of the first transfer process for the wafer WB1. Specifically, the control unit 61 determines the start timing t4 of the first transfer process for the wafer WB1 in such a way that the above interval becomes the interval time I.

[0112] In this way, in the substrate processing system 1 according to the embodiment, the start timing of the first transfer process for the wafer WB1 is determined so that the period of the second transfer process for the preceding wafer WA1 does not overlap with the period of the second transfer process for the subsequent wafer WB1.

[0113] Specifically, the first transfer process for the wafer WB1 starts at a timing when the interval between the predicted start timing t2 of the second transfer process for the wafer WA1 and the predicted start timing t3 of the second transfer process for the wafer WB1 is equal to or greater than the interval time I.

[0114] Thereby, it is possible to suppress the transfer process for the wafer WB1 by the transfer device 16 at the timing of the second transfer process for the wafer WA1 after the liquid processing. In other words, it is possible to suppress the standby time for the wafer WA1 after the liquid processing. Therefore, according to the substrate processing system 1 according to the embodiment, it is possible to suppress variations in the transfer time of the wafer having a liquid film formed on its surface.

[0115] When the second transfer process for the wafer WA1 is completed, the state becomes such that the process A for the next wafer WA2 can be executed. At this time, the control unit 61 determines the estimated start timing t5 of the second transfer process for the wafer WA2 assuming that the process A for the wafer WA2 starts immediately. Further, the control unit 61 determines whether the interval between the estimated start timing t3 of the second transfer process for the preceding wafer WB1 and the estimated start timing t5 of the second transfer process for the subsequent wafer WA2 is less than the interval time I. In the illustrated example, the interval between the estimated start timing t3 and the estimated start timing t5 is equal to or greater than the interval time I. Therefore, at the timing when the state becomes such that the process A for the wafer WA2 can be executed, that is, at the timing when the second transfer process for the wafer WA1 is completed, the control unit 61 starts the first transfer process for the wafer WA2.

[0116] The control unit 61 also determines the start timing t7 of the first transfer process for the wafer WB2 through the same process as described above. That is, the control unit 61 determines the start timing t7 of the first transfer process for the wafer WB2 such that the interval between the estimated start timing t5 of the second transfer process for the wafer WA2 and the estimated start timing t6 of the second transfer process for the wafer WB2 becomes the interval time I.

[0117] In the above example, it is determined whether the interval between the estimated start timing of the second transfer process for the preceding wafer W and the estimated start timing of the second transfer process for the subsequent wafer W is less than the interval time I. However, it is not limited thereto. For example, the control unit 61 may also determine whether the interval between the estimated end timing of the second transfer process for the preceding wafer W and the estimated start timing of the second transfer process for the subsequent wafer W is less than the interval time I. That is, the control unit 61 may determine whether the interval between the estimated execution period of the second transfer process for the preceding wafer W and the estimated execution period of the second transfer process for the subsequent wafer W is less than the interval time I. In this case, the interval time I only needs to be at least 0 or more, and may be shorter than the interval time I set for the interval between the above-mentioned estimated start timings.

[0118] In addition, as a method of setting the interval between the estimated start timing of the second transfer process for the first wafer W and the estimated start timing of the second transfer process for the subsequent wafer W to be equal to or longer than the interval time, sometimes two methods can be adopted. The first method is to advance the estimated start timing of the second transfer process for the subsequent wafer W in terms of time, and the second method is to delay the estimated start timing of the second transfer process for the subsequent wafer W in terms of time. In such a case, the control unit 61 may not adopt the advancing method but adopt the delaying method. Thereby, it is possible to prevent the processing for the subsequent wafer W from exceeding the processing for the first wafer W. Thus, for example, the complication of the system can be suppressed.

[0119] <Regarding the prohibited transfer period>

[0120] The control unit 61 may set a prohibited transfer period with the estimated start timing of the second transfer process for the first wafer W as the end point of the period before the estimated start timing of the second transfer process for the first wafer W. Refer to Figure 8 To explain this point. Figure 8 is a timing chart for explaining an example of the subsequent process start timing adjustment process considering the prohibited transfer period. The process shown in Figure 8 is executed according to the control of the control unit 61.

[0121] In addition, in Figure 8 the upper figure, an example is shown in which the start timing t4 of the first transfer process for the subsequent wafer WB1 is included in the prohibited transfer period P. In addition, in Figure 8 the lower figure, a case is shown in which the start timing t4 of the first transfer process for the subsequent wafer WB1 is shifted so that the start timing t4 is not included in the prohibited transfer period P.

[0122] As Figure 8 shown, a prohibited transfer period P with the estimated start timing t11 of the second transfer process for the first wafer WA2 as the end point of the period is set before the estimated start timing t11 of the second transfer process for the first wafer WA2. The control unit 61 first tentatively determines the start timing t13 of the first transfer process for the wafer WB1. The start timing t13 is tentatively determined such that the interval between the estimated start timing t11 of the second transfer process for the first wafer WA2 and the estimated start timing t12 of the second transfer process for the subsequent wafer WB1 becomes the interval time I. After that, the control unit 61 determines whether the tentatively determined start timing t13 is included in the prohibited transfer period P.

[0123] In the case where, as shown in Figure 8 the upper figure, the tentatively determined start timing t13 is included in the prohibited transfer period P, as Figure 8As shown in the figure below, the control unit 61 delays the temporarily determined start timing t13 in time so that the start timing t13 does not overlap with the prohibited transfer period P. Specifically, at a timing where the interval between the predicted start timings t11 and t12 is the interval time I or more and the start timing t13 does not overlap with the prohibited transfer period P, the control unit 61 starts the first transfer process for the wafer WB1. Here, since the first transfer process for the wafer WB1 cannot be started until the second transfer process for the wafer WA2 ends, the first transfer process for the wafer WB1 is started at the timing when the second transfer process for the wafer WA2 ends.

[0124] In this way, the prohibited transfer period P can be set immediately before the predicted start timing of the second transfer process for the preceding wafer W, and the transfer of other wafers W is prohibited during the prohibited transfer period P. Thereby, it is possible to more reliably start the second transfer process for the preceding wafer W at the predicted start timing. In addition, when there is a preceding wafer WA1 in the drying unit 18A1 which is the transfer destination of the wafer WA2, the subsequent wafer WA2 cannot be transferred into the drying unit 18A1. Therefore, it is allowed to execute the process of transferring the preceding wafer WA1 out of the drying unit 18A1 during the prohibited transfer period P, that is, the third transfer process for the wafer WA1.

[0125] <Method for determining the start timing of the first transfer process between the same processes>

[0126] In the above example, the case of determining the start timing of the first transfer process between different processes A and B based on the interval time I has been described. Not limited to this, the start timing of the first transfer process between the same processes can also be determined based on the interval time I. Refer to Figure 9 to illustrate this. Figure 9 is a timing chart for illustrating an example of a method for determining the start timing of the first transfer process between the same processes. The process shown in Figure 9 is executed according to the control of the control unit 61.

[0127] In Figure 9 an example is shown in which a plurality of wafers WA1 and WA3 are processed in the order of the wafers WA1 and WA3 in a set of liquid processing units 17A1 and drying units 18A1 arranged in the processing block 5A. In addition, in Figure 9 an example is shown in which a plurality of wafers WA2 and WA4 are processed in the order of the wafers WA2 and WA4 in a set of liquid processing units 17A2 and drying units 18A2 arranged in the processing block 5A.

[0128] As Figure 9As shown, the control unit 61 determines the estimated start timing t21 of the second transfer process for the preceding wafer WA1 and the estimated start timing t22 of the second transfer process for the subsequent wafer WA2. Further, the control unit 61 determines the start timing t23 of the first transfer process for the wafer WA2 such that the interval between the estimated start timings t21 and t22 becomes the interval time I.

[0129] In this way, the control unit 61 can also determine the start timing of the first transfer process for the subsequent wafer WA such that the interval between the estimated start timings of the second transfer process is equal to or greater than the interval time for wafers WA processed through the same process (here, process A). The same applies to between wafers WA2 and WA3, and between wafers WA3 and WA3.

[0130] In addition, the control unit 61 can also determine the start timing t24 of the first transfer process for the subsequent wafer WA3 for wafers WA1 and WA3 processed in a set of liquid processing units 17A1 and drying units 18A1 according to the following procedure.

[0131] First, the control unit 61 determines the estimated end timing t25 of the third transfer process for the preceding wafer WA1 based on the processing time of the known third transfer process and the like. Next, the control unit 61 determines the start timing t24 of the first transfer process for the wafer WA3 such that the second transfer process for the subsequent wafer WA3 starts at the above-mentioned estimated end timing t25. In other words, the control unit 61 determines the start timing t24 of the first transfer process for the subsequent wafer WA3 such that the end timing of the third transfer process for the preceding wafer WA1 and the start timing of the second transfer process for the subsequent wafer WA3 are simultaneous.

[0132] Thereby, for example, by waiting for the second transfer process for the subsequent wafer WA3 until the third transfer process for the preceding wafer WA1 ends before starting, it is possible to suppress variations in the processing time of the second transfer process for the wafer WA3. In addition, by making the end timing of the third transfer process for the preceding wafer WA1 and the start timing of the second transfer process for the subsequent wafer WA3 simultaneous, it is possible to efficiently transfer the wafers WA1 and WA3.

[0133] Furthermore, the end timing of the third transfer process for the preceding wafer WA1 and the start timing of the second transfer process for the subsequent wafer WA3 do not necessarily have to be simultaneous. That is, the control unit 61 only needs to determine the start timing t24 of the first transfer process for the wafer WA3 such that the liquid processing for the subsequent wafer WA3 ends within a preset time after the end of the third transfer process for the preceding wafer WA1.

[0134] <Method for Determining Priority in Case Where Two Processes Can Be Started for Execution>

[0135] When both Process A and Process B can be started for execution, the control unit 61 can preferentially execute a process other than the last executed process among Process A and Process B.

[0136] Refer to Figure 10 to illustrate this point. Figure 10 is a timing chart showing an example of a method for determining priority in a case where two processes can be started for execution. The processes shown are executed under the control of the control unit 61. Figure 10 as shown.

[0137] In Figure 10 an example is shown in which a wafer WA1 is processed in a set of liquid processing units 17A1 and a drying unit 18A1 arranged in the processing block 5A. In addition, in Figure 10 an example is shown in which a wafer WA2 is processed in a set of liquid processing units 17A2 and a drying unit 18A2 arranged in the processing block 5A. In addition, in Figure 10 an example is shown in which a wafer WB1 is processed in a set of liquid processing units 17B1 and a drying unit 18B1 arranged in the processing block 5B.

[0138] As Figure 10 shown, as the subsequent wafer W following the preceding wafer WA1, both a wafer WA2 to be processed by Process A and a wafer WB1 to be processed by Process B can be selected. In this case, since the preceding wafer WA1 is a wafer WA processed by Process A, the control unit 61 preferentially starts the processing for the wafer WB1, which is the subsequent wafer W and is processed by Process B. Specifically, the control unit 61 first starts the first transfer process for the wafer WB1 at the start timing t31, and then starts the first transfer process for the wafer WA2 at the start timing t32. In addition, the start timing t32 is the timing when the first transfer process for the wafer WB1 ends.

[0139] In this way, when both Process A and Process B can be started for execution, the control unit 61 can start executing a process other than the last executed process among Process A and Process B. Thereby, it is possible to suppress a difference in the progress degree between Process A and Process B.

[0140] <Regarding Transfer Time>

[0141] The processing times of the first transfer process, the second transfer process, and the third transfer process (hereinafter, referred to as "transfer time") can be fixed times set in advance. Refer to Figure 11 and Figure 12 to illustrate this point.Figure 11 This is a diagram showing an example of transfer time information. Additionally, Figure 12 This is a flowchart showing an example of the process of the third transfer process. It is executed according to the control of the control unit 61 Figure 12 for the process shown.

[0142] In the storage unit 62 of the control device 6, for example, transfer time information as shown in Figure 11 is pre-stored in advance. As shown in Figure 11 , the transfer time information is information that associates each action during transfer with the time from the start to the end of the action (action time).

[0143] Specifically, each of the first transfer process, the second transfer process, and the third transfer process includes "move before unit", "receive wafer", and "send out wafer" as their respective actions. "Move before unit" is an action that moves the transfer device 16 from a certain movement source to a certain movement destination. "Receive wafer" is an action that receives a wafer from the movement destination. "Send out wafer" is an action that transfers a wafer to the movement destination.

[0144] For example, according to Figure 11 the transfer time information shown, "a1" when there is no wafer held and "a3" when there is a wafer held are defined as the action times for moving before the unit from the liquid processing unit 17 to the drying unit 18. The action time "a3" is set to be longer than the action time "a1". This is because, from the viewpoint of preventing the positional deviation of the wafer W, etc., the moving speed in the state of holding the wafer W is made slower than the state of not holding the wafer W. Similarly, according to Figure 11 the transfer time information shown, "a2" when there is no wafer held and "a4" when there is a wafer held are defined as the action times for moving before the unit from the drying unit 18 to the transfer section 14.

[0145] Additionally, according to Figure 11 the transfer time information shown, "a5" is defined as the action time for "receive wafer" of receiving the wafer W from the drying unit 18, and "a6" is defined as the action time for "send out wafer" of placing the wafer W on the transfer section 14.

[0146] Next, an example of the case of performing the third transfer process according to this transfer time information will be described with reference to Figure 12 . As shown in Figure 12As shown, after the control unit 61 performs the pre-unit movement from the liquid processing unit 17 to the drying unit 18 (step S201), it performs the acceptance of the wafer in the drying unit 18 (step S202). After that, after the control unit 61 performs the pre-unit movement from the drying unit 18 to the transfer unit 14 (step S203), it performs the sending out of the wafer in the transfer unit 14 (step S204).

[0147] In step S201, the control unit 61 first starts the timer with the operation time "a1" (step S201a). Next, the control unit 61 moves the transfer device 16 in front of the drying unit 18 (step S201b). Then, the control unit 61 makes the transfer device 16 standby in front of the drying unit 18 until the timer of "a1" started in step S201a times out (step S201c).

[0148] When the timer of "a1" times out in step S201c, the control unit 61 starts the process of step S202. In step S202, the control unit 61 first starts the timer with the operation time "a5" (step S202a). Next, the control unit 61 receives the wafer W from the drying unit 18 (step S202b). Then, the control unit 61 makes the transfer device 16 standby in front of the drying unit 18 until the timer of "a5" started in step S202a times out (step S202c).

[0149] When the timer of "a5" times out in step S202c, the control unit 61 starts the process of step S203. In step S203, the control unit 61 first starts the timer with the operation time "a4" (step S203a). Next, the control unit 61 moves the transfer device 16 to the transfer unit 14 (step S203b). Then, the control unit 61 makes the transfer device 16 standby in front of the transfer unit 14 until the timer of "a4" started in step S203a times out (step S203c).

[0150] When the timer of "a4" times out in step S203c, the control unit 61 starts the process of step S204. In step S204, the control unit 61 first starts the timer with the operation time "a6" (step S204a). Next, the control unit 61 places the wafer W on the transfer unit 14 (step S204b). Then, the control unit 61 makes the transfer device 16 standby in front of the transfer unit 14 until the timer of "a6" started in step S204a times out (step S204c).

[0151] Here, the third transfer process has been described as an example, but the first transfer process and the second transfer process are the same. That is, in the first transfer process, after the control unit 61 moves the transfer device 16 from the transfer unit 14 to the liquid processing unit 17, the transfer device 16 is put on standby until the elapsed time since the start of the first transfer process reaches a preset time. In addition, in the second transfer process, after the control unit 61 moves the transfer device 16 from the liquid processing unit 17 to the drying unit 18, the transfer unit is put on standby until the elapsed time since the start of the second transfer process reaches a preset time.

[0152] By controlling in this way, the transfer times of the first transfer process to the third transfer process can be set to fixed times. In other words, it is possible to suppress the transfer times of the first transfer process to the third transfer process from becoming longer or shorter. As a result, it is possible to suppress the transfer cycle of the wafer W from being disrupted, and the wafer W can be stably transferred in a fixed cycle.

[0153] As described above, the substrate processing apparatus (as an example, the substrate processing system 1) according to the embodiment includes a transfer unit (as an example, the transfer unit 14), a plurality of liquid processing units (as an example, the liquid processing unit 17), a plurality of drying processing units (as an example, the drying unit 18), a transfer unit (as an example, the transfer device 16), and a control unit (as an example, the control unit 61). The transfer unit can accommodate a plurality of substrates (as an example, wafers W). The plurality of liquid processing units are used to form a liquid film on the surface of the substrate. The plurality of drying processing units make the substrate having a liquid film formed on its surface contact with a supercritical fluid to dry the substrate. The transfer unit performs the transfer of the substrate. The control unit controls the transfer unit, the plurality of liquid processing units, the plurality of drying processing units, and the transfer unit to parallelly execute a first process (as an example, one of the processes A and B) and a second process (as an example, the other of the processes A and B), the first process and the second process being two processes including a first transfer process of transferring a substrate from the transfer unit to the liquid processing unit, a liquid processing performed by the liquid processing unit, a second transfer process of transferring the substrate from the liquid processing unit to the drying processing unit, and a drying processing performed by the drying processing unit, wherein at least the processing times of the liquid processing and the drying processing are different between the first process and the second process. In addition, when the execution of the second process for the second substrate among the plurality of substrates starts during the execution of the first process for the first substrate among the plurality of substrates, the control unit determines the start timing of the first transfer process for the second substrate so that the period of the second transfer process for the first substrate does not overlap with the period of the second transfer process for the second substrate.

[0154] Specifically, when the interval between the start timing of the second transfer process for the second substrate, which is predicted assuming that the first transfer process for the second substrate has started, and the start timing of the second transfer process for the first substrate is less than a preset interval time (as an example, the interval time I), the control unit causes the first transfer process for the second substrate to start at a timing that makes the above interval equal to or greater than the interval time.

[0155] Therefore, according to the substrate processing apparatus according to the embodiment, even when a plurality of processes with different processing times are executed in parallel, it is possible to suppress variations in the transfer time of a wafer having a liquid film formed on its surface.

[0156] Alternatively, the control unit causes the first transfer process for the second substrate to start at a timing that makes the above interval equal to or greater than the interval time, so that the second transfer process for the second substrate starts after the second transfer process for the first substrate ends.

[0157] Thereby, it is possible to prevent the processing of the subsequent substrate from exceeding the processing of the preceding substrate. Thus, for example, it is possible to suppress the complication of the system.

[0158] Alternatively, when the start timing of the first transfer process for the second substrate is included in the prohibited transfer period ending at the start timing of the second transfer process for another substrate assuming that the first transfer process for the second substrate starts at a timing that makes the above interval equal to the interval time, the control unit starts the first transfer process for the second substrate after the second transfer process for the other substrate ends.

[0159] Thereby, it is possible to more reliably start the second transfer process for the preceding substrate at the predicted start timing.

[0160] The process may include a third transfer process of transferring the substrate from the drying process unit to the transfer unit. In this case, alternatively, when the first process for the third substrate among a plurality of substrates starts during the drying process for the first substrate, the control unit starts the first transfer process for the third substrate in such a way that the liquid process for the third substrate ends within a preset time after the third transfer process for the first substrate ends.

[0161] Thereby, for example, by waiting for the second transfer process for the subsequent substrate to start until the third transfer process for the preceding substrate ends, it is possible to suppress variations in the processing time of the second transfer process for the subsequent substrate.

[0162] Alternatively, when both the first process and the second process can be started, the control unit starts the process other than the process that was last executed among the first process and the second process.

[0163] Accordingly, it is possible to suppress a difference in the progress degrees between the first process and the second process.

[0164] Alternatively, in the first transfer process, after the control unit moves the transfer unit from the transfer and reception unit to the liquid processing unit in the first transfer process, the control unit causes the transfer unit to standby until the elapsed time from the start of the first transfer process reaches a preset time. Further alternatively, in the second transfer process, after the control unit moves the transfer unit from the liquid processing unit to the drying processing unit in the second transfer process, the control unit causes the transfer unit to standby until the elapsed time from the start of the second transfer process reaches a preset time.

[0165] Accordingly, it is possible to suppress the transfer time of the first transfer process and the third transfer process from becoming longer or shorter. Accordingly, it is possible to suppress the transfer cycle of the substrate from being disordered, and thus it is possible to stably transfer the substrate in a fixed cycle.

[0166] The embodiments of the present disclosure have been described above, but the present disclosure is not limited to the above-described embodiments, and various changes can be made without departing from the gist thereof. For example, in the above-described embodiment, the substrate processing system 1 provided with one transfer device 16 is shown, but the number of the transfer devices 16 is not limited to one, and it is sufficient to commonly provide the transfer device 16 for each of a plurality of pairs of liquid processing units 17 and drying units 18, and there may be a plurality of transfer devices 16.

[0167] The embodiments disclosed this time should be considered illustrative in all respects and not restrictive. In fact, the above-described embodiments can be specifically implemented in various ways. In addition, the above-described embodiments can be omitted, replaced, and changed in various ways without departing from the appended claims and their gist.

[0168] Description of Reference Numerals

[0169] 1: Substrate processing system; 2: Loading and unloading station; 3: Processing station; 4: Transfer block; 5: Processing block; 6: Control device; 11: Carrier placement unit; 12: Transfer unit; 13: Transfer device; 14: Transfer and reception unit; 15: Transfer area; 16: Transfer device; 17: Liquid processing unit; 18: Drying unit; 61: Control unit; 62: Storage unit; I: Interval time; P: Prohibited transfer period; W: Wafer.

Claims

1. A substrate processing apparatus, comprising: a transfer section capable of accommodating a plurality of substrates; a plurality of liquid processing sections for forming a liquid film on the surface of the substrate; a plurality of drying processing sections for drying the substrate by bringing the substrate having a liquid film formed on its surface into contact with a supercritical fluid; a transfer unit for transferring the substrate; and a control section that executes a first process and a second process in parallel by controlling the transfer section, the plurality of liquid processing sections, the plurality of drying processing sections, and the transfer unit. The first process and the second process are two processes including a first transfer process of transferring the substrate from the transfer section to the liquid processing section, liquid processing by the liquid processing section, a second transfer process of transferring the substrate from the liquid processing section to the drying processing section, and drying processing by the drying processing section. At least the processing times of the liquid processing and the drying processing are different between the first process and the second process. Wherein, when the second process for the second substrate among the plurality of substrates is started during the execution of the first process for the first substrate among the plurality of substrates, the control section determines the start timing of the first transfer process for the second substrate so that the period of the second transfer process for the first substrate does not overlap with the period of the second transfer process for the second substrate, thereby suppressing the standby time for the first substrate after the liquid processing. When the interval between the start timing of the second transfer process for the second substrate predicted assuming the start of the first transfer process for the second substrate and the start timing of the second transfer process for the first substrate is less than a preset interval time, the control section starts the first transfer process for the second substrate at a timing that makes the interval equal to or greater than the interval time.

2. The substrate processing apparatus according to claim 1, wherein: the control section starts the first transfer process for the second substrate at a timing that makes the interval equal to or greater than the interval time, so that the second transfer process for the second substrate starts after the second transfer process for the first substrate ends.

3. The substrate processing apparatus according to claim 1 or 2, wherein: when the start timing of the first transfer process for the second substrate is included in the prohibited transfer period ending at the start timing of the second transfer process for another substrate assuming that the first transfer process for the second substrate starts at a timing that makes the interval equal to the interval time, the control section starts the first transfer process for the second substrate after the second transfer process for another substrate ends.

4. The substrate processing apparatus according to claim 1 or 2, wherein: the process includes a third transfer process of transferring the substrate from the drying processing section to the transfer section. When the first process for the third substrate among the plurality of substrates is started during the drying process for the first substrate, the control unit starts the first transfer process for the third substrate such that the liquid process for the third substrate ends within a preset time after the end of the third transfer process for the first substrate.

5. The substrate processing apparatus according to claim 1 or 2, characterized in that when both the first process and the second process can be started, the control unit starts a process other than the process that was last executed among the first process and the second process.

6. The substrate processing apparatus according to claim 1 or 2, characterized in that in the first transfer process, after the control unit moves the transfer unit from the transfer junction to the liquid processing unit, the control unit makes the transfer unit standby until the elapsed time from the start of the first transfer process reaches a preset time.

7. The substrate processing apparatus according to claim 1 or 2, characterized in that in the second transfer process, after the control unit moves the transfer unit from the liquid processing unit to the drying process unit, the control unit makes the transfer unit standby until the elapsed time from the start of the second transfer process reaches a preset time.

8. A substrate processing method, comprising the following steps: The first process and the second process are executed in parallel. The first process and the second process are two processes including a first transfer process of using a transfer unit to transfer the substrate from a transfer section capable of accommodating a plurality of substrates to a certain liquid processing section among a plurality of liquid processing sections for forming a liquid film on the surface of the substrate, a liquid processing performed by the liquid processing section, a second transfer process of using the transfer unit to transfer the substrate from the liquid processing section to a certain drying processing section among a plurality of drying processing sections for drying the substrate by bringing the substrate into contact with a supercritical fluid, and a drying processing performed by the drying processing section. Among them, at least the processing times of the liquid process and the drying process are different between the first process and the second process, wherein the steps executed in parallel include the following steps: when the second process for the second substrate among the plurality of substrates is started during the execution of the first process for the first substrate among the plurality of substrates, the start timing of the first transfer process for the second substrate is determined such that the period of the second transfer process for the first substrate does not overlap with the period of the second transfer process for the second substrate, thereby suppressing the standby time for the first substrate after the liquid process; and starting the first transfer process for the second substrate at the start timing determined in the step of making the determination, when the interval between the predicted start timing of the second transfer process for the second substrate and the start timing of the second transfer process for the first substrate, assuming that the first transfer process for the second substrate has started, is less than a preset interval time, starting the first transfer process for the second substrate at a timing that makes the interval equal to or greater than the interval time.

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