Circuit substrate assembly and semiconductor circuit module

Abstract

The present invention relates to a circuit substrate assembly and a semiconductor circuit module. The semiconductor circuit modules are a semiconductor circuit module with a rectification function and a semiconductor circuit module with a PFC function. The circuit substrate assembly includes a circuit substrate and a pin group. The pin groups of the two semiconductor circuit modules have the same number of pins. The pin groups are divided into a continuously arranged high-current pin group and a continuously arranged low-current pin group. The high-current pin group includes a continuously arranged three-phase output pin group, and the other pins in the high-current pin group are arranged on one side or both sides of the three-phase output pin group. In this way, when the sealing layer is formed during the manufacturing process of the two semiconductor circuit modules, the same molds, such as the plastic encapsulation mold, the pin stamping mold, the pin root cutting mold, and the pin cutting forming mold, can be used. There is no need to design different molds, thereby significantly reducing the manufacturing cost of the two semiconductor circuit modules.

Description

Technical Field

[0001] The invention relates to a circuit substrate assembly and a semiconductor circuit module, belonging to the technical field of semiconductor circuit applications. Background Art

[0002] Semiconductor circuits are power-driven products that combine power electronics and integrated circuit technology. They typically integrate power switching devices and high-voltage drive circuits. Currently, other circuits, such as PFC switching circuits or rectifier circuits, are also integrated to meet application needs. The integration of these circuits is called a semiconductor circuit module. The manufacturing process of semiconductor circuit modules requires plastic encapsulation molds, pin stamping dies, pin root cutting dies, and pin cutting forming dies. Each semiconductor circuit module with different functions requires different molds due to its different external structure and pin arrangement, which leads to high manufacturing costs for semiconductor circuit molding. Summary of the Invention

[0003] The technical problem to be solved by the present invention is to solve the problem that the existing semiconductor circuit modules with different functions have high manufacturing costs due to the different corresponding manufacturing molds.

[0004] Specifically, the present invention discloses a circuit substrate assembly suitable for two semiconductor circuit modules, wherein the two semiconductor circuit modules are a semiconductor circuit module with a rectification function and a semiconductor circuit module with a PFC function. The circuit substrate assembly includes:

[0005] Circuit substrate, the circuit substrate is provided with an inverter circuit and a drive circuit. For semiconductor circuit modules with a rectification function, the circuit substrate is also provided with a rectification circuit. For semiconductor circuit modules with a PFC function, the circuit substrate is also provided with a PFC switching circuit;

[0006] The pin group has the same number of pins in the pin group of the semiconductor circuit module with PFC function and the semiconductor circuit module with rectification function. The pin group is divided into a continuously arranged high-voltage pin group and a continuously arranged low-voltage pin group. The three-phase output pins in the high-voltage pin group connected to the three-phase output end of the inverter circuit and the three-phase floating power supply pins are arranged continuously to form a three-phase output pin group. The other pins in the high-voltage pin group are arranged on one side or both sides of the three-phase output pin group.

[0007] Optionally, for a semiconductor circuit module with PFC function, other pins in the high-voltage pin group include a PFC switch tube input pin connected to the PFC switch circuit, a PFC rectifier diode output pin, and a bus voltage input pin connected to the inverter circuit, wherein the PFC rectifier diode output pin and the bus voltage input pin are arranged consecutively, and the PFC rectifier diode output pin and the bus voltage input pin are arranged between the three-phase output pin group and the low-voltage pin group, and the PFC switch tube input pin is arranged on one side of the three-phase output pin group away from the low-voltage pin group.

[0008] Optionally, for a semiconductor circuit module with a rectification function, the other pins in the high-voltage pin group include two AC input pins and a rectifier output positive pin connected to the rectifier circuit, wherein the two AC input pins and the rectifier output positive pin are arranged consecutively, and the rectifier output positive pin and the two AC input pins are arranged on the side of the three-phase output pin group away from the low-voltage pin group.

[0009] Optionally, the four rectifier diodes of the rectifier circuit are arranged close to the two AC input pins, and the wiring connecting the negative output end of the rectifier circuit and the rectifier output negative pin forms a second thermal ground wiring, and the second thermal ground wiring is arranged between the rectifier circuit, the inverter circuit and the drive circuit.

[0010] Optionally, some pins in the weak-current pin group of the semiconductor circuit module with rectification function are left blank.

[0011] Optionally, the three lower-arm switching tubes in the inverter circuit are grouped near the three-phase output pins, the three upper-arm switching tubes in the inverter circuit are arranged between the three lower-arm switching tubes and the drive circuit, and the drive circuit is arranged away from the three upper-arm switching tubes and the three lower-arm switching tubes, and the drive chip in the drive circuit is respectively connected to the three upper-arm switching tubes and the three lower-arm switching tubes through bonding wires.

[0012] Optionally, the driving circuit includes a driving chip, which is provided with a weak-current bonding area group connected to the weak-current pin group and a strong-current bonding area group connected to the inverter circuit. The weak-current bonding area group and the strong-current bonding area group are independently set and are far away from each other.

[0013] Optionally, the weak electric bonding area group and the strong electric bonding area group are respectively arranged close to different sides of the driver chip.

[0014] The present invention further provides a semiconductor circuit module, which is provided with the circuit substrate assembly as described above. The semiconductor circuit module is a semiconductor circuit module with a rectification function or a semiconductor circuit module with a PFC function.

[0015] The present invention is a circuit substrate assembly suitable for two semiconductor circuit modules, the two semiconductor circuit modules are a semiconductor circuit module with a rectifier function and a semiconductor circuit module with a PFC function, the circuit substrate assembly includes a circuit substrate and a pin group, wherein the number of pins in the pin group of the semiconductor circuit module with the PFC function and the semiconductor circuit module with the rectifier function is the same, the pin group is divided into a continuously arranged high-voltage pin group and a continuously arranged low-voltage pin group, wherein the three-phase output pins connected to the three-phase output end of the inverter circuit and the three-phase floating power supply pins in the high-voltage pin group are continuously arranged to form a three-phase output pin group, and the other pins in the high-voltage pin group are arranged on one side or both sides of the three-phase output pin group. In this way, when the circuit substrate assembly is encapsulated to form a sealing layer during the manufacturing process of the two semiconductor circuit modules, the molds such as the plastic encapsulation mold, the pin stamping mold, the pin root cutting mold, and the pin cutting forming mold can all use the same mold without having to design different molds, thereby significantly reducing the manufacturing cost of the two semiconductor circuit modules and facilitating the wiring of the circuits on the circuit substrates corresponding to the two semiconductor circuit modules, thereby improving the efficiency of the design. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 A simplified schematic diagram of the internal circuit of a circuit substrate assembly of a semiconductor circuit module with a PFC function according to an embodiment of the present invention;

[0017] Figure 2 A simplified schematic diagram of the internal circuit of a circuit substrate assembly of a semiconductor circuit module with a rectification function according to an embodiment of the present invention;

[0018] Figure 3 for Figure 1 A block diagram of a driver chip of a circuit substrate assembly;

[0019] Figure 4 for Figure 2 A block diagram of a driver chip of a circuit substrate assembly;

[0020] Figure 5 for Figure 1 A schematic structural diagram of a circuit substrate of a circuit substrate assembly;

[0021] Figure 6 for Figure 2 A schematic structural diagram of a circuit substrate of a circuit substrate assembly;

[0022] Figure 7 A front view of a semiconductor circuit module according to an embodiment of the present invention;

[0023] Figure 8 is a cross-sectional view of a semiconductor circuit module according to an embodiment of the present invention;

[0024] Figure 9 The wiring and silk screen diagram of a PCB of a circuit board using a semiconductor circuit module with a PFC function according to an embodiment of the present invention;

[0025] Figure 10 The wiring and silk screen diagram of the PCB of the circuit board of the semiconductor circuit module with rectification function according to the embodiment of the present invention;

[0026] Figure 11 for Figure 1 A schematic structural diagram of the circuit substrate assembly in FIG.

[0027] Figure 12 for Figure 2 Schematic diagram of the structure of the circuit substrate assembly.

[0028] Reference numerals:

[0029] A circuit substrate assembly 10 of a semiconductor circuit module with a PFC function, a first circuit substrate 100, a first inverter circuit 110, a first driver chip 120, a first weak-current bonding area group 121, a first strong-current bonding area group 122, a PFC switch circuit 130, a first thermal ground trace 141, a first bonding wire 142, a first busbar trace 143, a first driver circuit 150, a circuit substrate assembly 20 of a semiconductor circuit module with a rectifier function, a second circuit substrate 200, a second inverter circuit 210, and a second driver chip 220, second weak-current bonding area group 221, second strong-current bonding area group 222, rectifier circuit 230, second thermal ground trace 241, second bonding wire 242, second bus trace 243, second drive circuit 250, pin group 310, strong-current pin group 311, weak-current pin group 312, first connecting rib 313, second connecting rib 314, sealing layer 410, electronic component 420, circuit substrate 430, heat dissipation substrate 431, insulating layer 432, circuit wiring layer 433, bonding wire 440, pin 450. DETAILED DESCRIPTION

[0030] It should be noted that, in the absence of structural or functional conflicts, the embodiments and features of the embodiments of the present invention can be combined with each other. The present invention will be described in detail below based on examples.

[0031] The semiconductor circuit mentioned in this invention is a circuit module that integrates power switching devices and high-voltage drive circuitry in a sealed package. It has widespread application in power electronics, such as motor drive inverters, various voltage inverters, variable-frequency speed regulation, metallurgical machinery, electric traction, and variable-frequency home appliances. The semiconductor circuit comprises an inverter circuit consisting of at least six upper and lower bridge-arm switching transistors and a drive circuit that drives the inverter circuit, thereby driving loads such as motors.

[0032] The present invention provides a circuit substrate assembly for two semiconductor circuit modules, the two semiconductor circuit modules being a semiconductor circuit module with a rectification function and a semiconductor circuit module with a PFC function. Figures 1 to 8 As shown, the circuit substrate assembly 10 of the semiconductor circuit module with PFC function and the circuit substrate assembly 20 of the semiconductor circuit module with rectification function are provided. The circuit substrate assembly includes a circuit substrate (specifically, a first circuit substrate 100 and a circuit substrate 200) and a pin group 310. The circuit substrate is provided with an inverter circuit (specifically, a first inverter circuit 110 and a second inverter circuit 210) and a drive circuit (specifically, a first drive circuit 150 and a second drive circuit 250). For the semiconductor circuit module with rectification function, the circuit substrate is further provided with a rectifier circuit 230. For the semiconductor circuit module with PFC function, the circuit substrate is further provided with a rectifier circuit 230. The semiconductor circuit module with PFC function and the semiconductor circuit module with rectification function have the same number of pins in the pin group 310, and the pin group 310 is divided into a continuously arranged high-voltage pin group 311 and a continuously arranged low-voltage pin group 312, wherein the three-phase output pins in the high-voltage pin group 311 connected to the three-phase output end of the inverter circuit and the three-phase floating power supply pins are continuously arranged to form a three-phase output pin group, and the other pins in the high-voltage pin group 311 are arranged on one side or both sides of the three-phase output pin group.

[0033] like Figure 10In the cross-sectional view of a semiconductor circuit module using the above-mentioned circuit substrate assembly, the circuit substrate 430 may include a heat dissipation substrate 431, an insulating layer 432, and a circuit wiring layer 433 connected to each other. The heat dissipation substrate 431 may be made of a metal material or other material, and the insulating layer 432 may be made of a resin material such as epoxy resin. The resin material may be filled with fillers such as aluminum oxide and aluminum carbide to improve thermal conductivity. The circuit wiring layer 433 may be formed by etching copper foil respectively arranged on the surface of the insulating layer 432, or it may be formed by printing a paste-like conductive medium. The conductive medium may be a conductive material such as graphene, solder paste, silver glue, etc. The surface of the circuit wiring layer 433 is provided with multiple component mounting positions for mounting electronic components 420, such as multiple discrete devices and driver chips. These discrete components include power devices that generate significant heat, such as switches. These switches include IGBTs (Insulated Gate Bipolar Transistors) or MOS transistors (metal oxide semiconductors), in this embodiment, IGBTs. They also include FRDs (Fast Recovery Diodes), as well as other passive components such as resistors and capacitors. Because power devices are significantly more powerful than passive components, they are also relatively large. The circuit wiring layer 433 and the electronic components 420 mounted thereon form a circuit, specifically including the aforementioned inverter circuit and drive circuit, as well as the PFC switch circuit 130 or the rectifier circuit 230. The pins 450 of the pin group can be located on one or both sides of the circuit substrate 430. In this embodiment, the pins 450 are located on one side of the circuit substrate 430.

[0034] like Figure 5 and Figure 6 As shown, the pin assembly 310 is connected to one or both sides of the circuit substrate. In this embodiment, the pin assembly 310 is connected to one side of the circuit substrate (specifically, the first circuit substrate 100 and the second circuit substrate 200). The pin assembly 310 includes a plurality of pins 315, and a first connecting rib 313 and a second connecting rib 314 that laterally connect the plurality of pins. The first connecting rib 313 is located at the end of the plurality of pins 315 that is away from the circuit substrate. One end of the plurality of pins 315 is connected to a pad on the surface of the circuit substrate by soldering, thereby positioning the pin assembly 310 on one side of the circuit substrate. The first connecting rib 313 and the second connecting rib 314 facilitate the fixing of the circuit substrate assembly to a mold or fixture during the subsequent manufacturing of the semiconductor circuit module.

[0035] The circuit substrate assembly of the embodiment of the present invention is configured such that the pin group 310 is divided into a continuously arranged high-current pin group 311 and a continuously arranged low-current pin group 312, and the three-phase output pin groups in the high-current pin group 311 are arranged continuously, and the other high-current pins are arranged on one side or both sides of the three-phase output pin group. In addition, the number of pins 315 in the pin group 310 for the semiconductor circuit module with PFC function and the semiconductor circuit module with rectification function is the same. In this way, the circuit substrate assemblies corresponding to the semiconductor circuit module with PFC function and the semiconductor circuit module with rectification function are completely identical in external dimensions, including the arrangement of the pins and the size of the circuit substrate. Therefore, when the circuit substrate assemblies of the two semiconductor circuit modules are packaged to form a sealing layer during the manufacturing process, the same molds such as the plastic encapsulation mold, the pin stamping mold, the pin root cutting mold, and the pin cutting forming mold can be used without the need to design different molds. This greatly reduces the manufacturing cost of the two semiconductor circuit modules and also facilitates the wiring of the circuits on the circuit substrates corresponding to the two semiconductor circuit modules, thereby improving the design efficiency.

[0036] In some embodiments of the present invention, Figure 1 、 Figure 3 、 Figure 5 and Figure 7As shown, for the circuit substrate assembly 10 of the semiconductor circuit module with PFC function, the first drive circuit 150 is mainly composed of a first drive chip 120, the first inverter circuit 110 is mainly composed of an upper and lower bridge arm circuit consisting of six switching transistors, namely Q1-Q6, and also includes freewheeling diodes D1-D6 connected in parallel to the collector and emitter of each switching transistor, respectively. The PFC switching circuit 130 is mainly composed of a PFC switching transistor Q7, a freewheeling diode D8 connected in parallel to the collector and emitter of the PFC switching transistor, and an FRD transistor D7. The weak-current pin group 312 is respectively connected to the weak-current ports of the first driver chip 120, including control signal pins (HIN1, HIN2, HIN3, LIN1, LIN2, LIN3, PFCIN) for driving the six-way switch tube and the PFC switch tube, low-voltage power supply pins (VDD, VSS), and some status signal pins (FAULT output and enable input multiplexing terminal FLT, PFC partial overcurrent protection voltage sampling terminal PFCTRIP, partial overcurrent protection voltage sampling terminal ITRIP). The high-voltage pin group 311 includes three-phase output pins (W, V, U) connected to the three-phase output end of the inverter circuit, and a three-phase floating power supply pin (VB3, VB2, VB1), which are arranged in sequence (U, VB1, V, VB2, W, VB3). It also includes a PFC switch tube input pin, namely the collector pin (PFC) of the PFC switch tube Q7, a PFC rectifier diode output pin (VCC1), and a bus voltage input pin (VCC21). The PFC rectifier diode output pin (VCC1) and the bus voltage input pin (VCC21) are arranged in sequence and are arranged between the three-phase output pin group and the low-voltage pin group 312. The collector pin (PFC) of the PFC switch tube Q7 is arranged on one side of the three-phase output pin group away from the low-voltage pin group 312.Specifically, the collector pin (PFC) of the PFC switch tube Q7 is the first pin, and the three-phase output pin group (U, VB1, V, VB2, W, VB3) is arranged in sequence next to the first pin. The PFC rectifier diode output pin (VCC1) and the bus voltage input pin (VCC21) are arranged in sequence next to the V-phase floating power supply pin (VB3). The weak current pin PFC switch tube output pin is the emitter pin (-VCC) of the PFC switch tube Q7, the emitter (U-) of the U-phase lower bridge switch tube Q2, the emitter (V-) of the V-phase lower bridge switch tube Q4, and the emitter (W-) of the W-phase lower bridge switch tube Q6. The bus voltage input pin (VCC21) is arranged consecutively, followed by the PFC rectifier diode output pin (VCC1) and the bus voltage input pin (VCC21). The PFC rectifier diode output pin (VCC1) and the bus voltage input pin (VCC21) are arranged consecutively to facilitate circuit board routing of the corresponding semiconductor circuit module. In practice, these two pins are directly connected on the circuit board. Therefore, their consecutive arrangement shortens the routing and facilitates wiring. The collector pin (PFC) of the PFC switch tube Q7 is arranged on the side of the three-phase output pin group away from the weak current pin group 312. In this embodiment, it is the first pin. This allows the semiconductor circuit module to be conveniently located on the outermost side of the semiconductor circuit module when it is mounted on the circuit board, thereby being closer to the PFC energy storage inductor. This effectively shortens the wiring connected to the PFC energy storage inductor, thereby reducing the switching loop area of the PFC switch circuit. This reduces interference with peripheral circuits, especially low-voltage circuits such as the MCU control circuit, during operation of the PFC switch circuit, thereby improving the operating stability of the control circuit.

[0037] And further, Figure 5 and Figure 7As shown, the PFC switch tube input pin, i.e., the collector pin (PFC) of the PFC switch tube Q7, is arranged on the outermost side of the first circuit substrate 100. The three electronic components of the PFC switch tube circuit 130 are also arranged on the outer side of the first circuit substrate 100, thereby connecting the collector of the PFC switch tube Q7, the anode of the freewheeling diode D2, and the weak current pin PFC. The first thermal ground trace 141 between the emitter pins (-VCC) of the switching transistors is relatively long. This trace 141 is arranged between the PFC switching circuit 130, the first inverter circuit 110, and the first driver circuit 150. Specifically, this trace 141 is arranged between the PFC switching transistor Q7, the three switching transistors (Q1, Q3, and Q5) of the three-phase upper bridge arm arranged in sequence, and the first driver chip 120. Because the trace connecting the collector of the PFC switching transistor Q7 and the first busbar trace 143 connecting the collectors of the three switching transistors are high voltage, while the first thermal ground trace 141 is low voltage, the first thermal ground trace 141 acts as an isolation device. This reduces the impact of the high-voltage fast switching signal on the first busbar trace 143 on the low-voltage circuits in the first driver chip 120, thereby improving the operating stability of the corresponding semiconductor circuit module.

[0038] In some embodiments of the present invention, Figure 2 、 Figure 4 、 Figure 6 and Figure 8As shown, for the circuit substrate assembly 20 of the semiconductor circuit module with a rectifier function, the second inverter circuit 210 is substantially identical to the circuit substrate assembly 10 of the semiconductor circuit module with a PFC function in the previous embodiment. However, the second driver chip 220 in the second driver circuit 250 differs from the first driver chip 120 in specific functionality. Specifically, the second driver chip 220 contains only six channels of drive circuitry for the six switches in the upper and lower bridge arms, lacking one channel for driving the PFC switch Q7 compared to the first driver chip 120. The second driver chip 220 lacks the PFC switch circuit-related ports in the previous embodiment. The corresponding PFC overcurrent protection voltage sampling pin (PFCTRIP) and the PFC switch control signal pin (PFCIN) in the PFC pin group 312 are omitted, with the pins (CN) being left blank. The emitter pin (-VCC) of the PFC IGBT is replaced with the rectifier output negative pin (-VCC). In addition to the three-phase output pin grouping, the high-voltage pin group 311 also includes pins related to the rectifier circuit 230, specifically two AC input pins (DB-R, DB-S) and a rectifier output positive pin (P+). The positive output end of the rectifier circuit 230 is simultaneously connected to the collector of the upper-arm switching tube (Q1, Q3, Q5) of the second inverter circuit 210. In other words, the rectifier output positive pin (P+) is simultaneously connected to the positive output end of the rectifier circuit 230 and the collector of the upper-arm switching tube (Q1, Q3, Q5) of the second inverter circuit 210. This pin is the bus voltage (a high voltage of approximately 300V under a 220V AC input environment) output pin. In the specific corresponding semiconductor circuit module application circuit, a large-capacity filter capacitor is required between the rectifier output positive pin (P+) and the rectifier output negative pin (-VCC) to filter the pulsating DC power output by the rectifier circuit 230 into smooth DC power. The two AC input pins and the rectifier output positive pin (P+) are arranged continuously, and the two AC input pins (DB-R, DB-S) and the rectifier output positive pin (P+) are set on the side of the three-phase output pin group away from the weak current pin group 312. Specifically, the rectifier output positive pin (P+) is the first pin, the two AC input pins (DB-R, DB-S) are arranged continuously following the rectifier output positive pin (P+), the three-phase output pin groups are arranged continuously in sequence (U, VB1, V, VB2, W, VB3) and followed by the AC input pin (DB-S), the rectifier output negative pin (-VCC), the W-phase lower bridge IGBT emitter (W-), the driving six-way switch tube (HIN1, HIN2, HIN3, LIN1, LIN2, LIN3), the FAULT output and enable input multiplexing terminal (FLT), the partial overcurrent protection voltage sampling terminal (ITRIP), the low-voltage power supply pin (VDD, VSS) and the V-phase floating power supply pin (VB3) are arranged continuously in sequence.By arranging the rectifier output positive pin (P+) and two AC input pins (DB-R, DB-S) on the side of the three-phase output pin group away from the weak-current pin group 312, these three pins are arranged outside the semiconductor circuit module. This facilitates routing of the AC input and filter capacitor traces on the circuit board when the semiconductor circuit module is applied to a specific circuit, and also shortens the trace length. Because these traces carry high overcurrent, shortening the trace length effectively reduces the PCB area occupied, and also reduces the AC input current loop area, reducing interference with other weak-current circuits. Specifically, the rectifier output positive pin (P+) can be as follows. Figure 8 As shown, the two AC input pins (DB-R, DB-S) are arranged on the outermost side of the second circuit substrate 200, and the two AC input pins (DB-R, DB-S) are arranged next to them; or in another embodiment, the two AC input pins (DB-R, DB-S) can be arranged on the outermost side of the second circuit substrate 200, and the rectifier output positive pin (P+) is arranged next to them.

[0039] And further, Figure 6 As shown, in the circuit routing of the second circuit substrate assembly 20, the four rectifier diodes (D7-D10) of the rectifier circuit 230 are arranged close to the two AC input pins (DB-R, DB-S), so that the second thermal ground routing 241 connecting the anodes of the two rectifier diodes D7 and D9 and the rectifier output negative pin (-VCC) is longer. It is arranged between the rectifier circuit 230, the second inverter circuit 210 and the second drive circuit 250, that is, the second thermal ground routing 241 is arranged between the two rectifier diodes (D8, D9). 10) Between the three switching tubes (Q1, Q3, Q5) of the three-phase upper bridge arm arranged in sequence and the second driver chip 220, since the second busbar trace 243 connecting the collectors of the three switching tubes is high voltage electricity, and the second thermal ground trace 241 is low voltage electricity, the second thermal ground trace 241 is set between the second busbar trace 243 and the second driver chip 220 to effectively play an isolation role, reduce the interference of the high-voltage second busbar trace 243 on the low-voltage circuit in the second driver chip 220, and make the entire circuit work more stably.

[0040] In some embodiments of the present invention, Figures 5 to 8 As shown, the three lower bridge arm switches in the inverter circuit are arranged in groups close to the three-phase output pins, the three upper bridge arm switches in the inverter circuit are arranged between the three lower bridge arm switches and the drive circuit, and the drive circuit is arranged away from the three upper bridge arm switches and the three lower bridge arm switches. The driver chip in the drive circuit is connected to the three upper bridge arm switches by bonding wires (specifically Figure 7 The first bonding wire 142 and Figure 8The second bonding wires 242 connect the three upper-arm switching transistors and the three lower-arm switching transistors, respectively. In these figures, the upper and lower-arm switching transistors are arranged roughly symmetrically, and the driver chip is relatively far away from the switching transistors, connected by multiple bonding wires. This allows the inverter circuit operating at high voltage to be further away from the driver chip operating at low voltage, thereby reducing the impact of the high-voltage environment on the low-voltage environment. This helps improve the operating stability of the driver chip.

[0041] In some embodiments of the present invention, Figures 5 to 8 As shown, the driving circuit includes a driving chip (specifically, a first driving chip 120 and a second driving chip 220), and the driving chip is provided with a weak current bonding area group connected to the weak current pin group 312 and a strong current bonding area group connected to the inverter circuit. The weak current bonding area group and the strong current bonding area group are independently provided and are far away from each other. Figure 7 and Figure 8 The first weak electric bonding area group 121, the first weak electric bonding area group 221, the first strong electric bonding area group 122, and the second strong electric bonding area group 222. These bonding areas are used to connect bonding wires. By separating the weak electric bonding area group and the strong electric bonding area group, the corresponding connected strong electric bonding wires and weak electric bonding wires are isolated, reducing the interference of the strong electric part on the weak electric part. Specifically, in these figures, the strong electric bonding area group and the weak electric bonding area group are respectively arranged on different sides of the driver chip to achieve effective isolation.

[0042] The present invention also provides a semiconductor circuit module, in which the circuit substrate assembly mentioned in the above embodiment is provided. Figure 9 and Figure 10As shown, a semiconductor circuit module 400 includes a circuit substrate assembly and a sealing layer 410 covering at least one side of the circuit substrate assembly where electronic components are mounted. One end of a pin 450 in a pin assembly is exposed from the sealing layer. The circuit substrate assembly includes a circuit substrate 430 and electronic components 420 mounted on the circuit substrate. Bonding wires 440 connect the electronic components or connect the electronic components to the circuit substrate. The circuit substrate 430 further includes a heat sink 431, an insulating layer 432, and a circuit wiring layer 433, all connected to each other. The electronic components 420 are mounted on the component mounting areas of the circuit wiring layer 433. These electronic components 420, circuit wiring layer 433, and bonding wires 440 form the circuit on the circuit substrate assembly mentioned in the above embodiments. Specifically, semiconductor circuit modules using the circuit substrate assembly include semiconductor circuit modules with PFC functions or semiconductor circuit modules with rectification functions. Since both semiconductor circuit modules are manufactured based on a circuit substrate assembly with the same outer dimensions and then packaged with a sealing layer, the specifications of the sealing layer are also the same. Therefore, during the manufacturing process, molds such as a plastic encapsulation mold for forming a sealing layer, a pin stamping mold for the pins, a pin root cutting mold for the pins, and a pin cutting forming mold for the pins can be used. This eliminates the need to design different molds in the existing technology, and can effectively reduce manufacturing costs.

[0043] The specific PCB wiring diagrams of these two semiconductor circuit modules applied to specific circuit control boards are as follows: Figure 11 and Figure 12 shown. Figure 11 This is a PCB wiring diagram of the first semiconductor circuit module IPM1 with PFC function applied to the control circuit board of the motor drive. Figure 11 As can be seen, the collector pin (PFC) of the PFC switch Q1 is located at the outermost edge of the first semiconductor circuit module IPM1, placing it as close as possible to the filter inductor L1. This shortens the trace L15 connecting this pin to the filter inductor L1, thereby reducing the area of the switch's current loop. The three-phase output pins are grouped and arranged sequentially, making the three traces (L11, L12, and L13) connecting the three-phase output terminals shorter. The PFC rectifier diode output pin (VCC1) and the bus voltage input pin (VCC21) are arranged consecutively, allowing the trace L14 connecting them to the positive terminal of the electrolytic capacitor to be as straight as possible, with some of its length being minimized. This arrangement minimizes the high-voltage wiring, effectively reducing the area of the resulting current loop and minimizing interference with surrounding low-voltage circuits.

[0044] Figure 12 This is a PCB wiring diagram of a second semiconductor circuit module IPM2 with a rectifying function applied to a control circuit board of a motor drive. Figure 12As can be seen, the rectifier output positive pin (P+) is located as the first pin on the outermost side of the second semiconductor circuit module. The two AC input pins (DB-R, DB-S) are located next, also near the outermost side of the second semiconductor circuit module IPM2. This minimizes the traces L21 and L23 connecting these two AC input pins to the AC input EMC circuit A. Trace L22 connecting the rectifier output positive pin (P+) to the positive terminal of the electrolytic capacitor for filtering is located on the back of the PCB. If a second semiconductor circuit module with a different pin arrangement is used, with the two AC input pins (DB-R, DB-S) located at the outermost side of the circuit board and the rectifier output positive pin (P+) next, this further shortens traces L21 and L23 connecting the AC input. This also shortens trace L22 connecting the rectifier output positive pin (P+) to the positive terminal of the electrolytic capacitor, further reducing the PCB area occupied by the traces and minimizing interference with surrounding weak-current circuits.

[0045] Throughout this specification, reference to terms such as "one embodiment," "some embodiments," "examples," "specific examples," or "some examples" means that a specific feature, structure, material, or characteristic described in conjunction with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0046] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like to indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0047] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "plurality" means at least two, such as two, three, etc., unless otherwise specifically defined.

[0048] In the present invention, unless otherwise specified or limited, the terms "installed," "connected," "connect," "fixed," etc. should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection, electrical connection; direct connection, or indirect connection through an intermediate medium; internal communication between two components, or interaction between two components, unless otherwise specified. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0049] In the present invention, unless otherwise expressly specified or limited, when a first feature is "above" or "below" a second feature, it may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediary. Furthermore, when a first feature is "above," "above," or "above" a second feature, it may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. When a first feature is "below," "below," or "below" a second feature, it may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.

[0050] Although the embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and are not to be construed as limitations on the present invention. A person skilled in the art may change, modify, replace and modify the above embodiments within the scope of the present invention.

Claims

1. A circuit substrate assembly suitable for two semiconductor circuit modules, wherein the two semiconductor circuit modules are a semiconductor circuit module with a rectification function and a semiconductor circuit module with a PFC function, characterized in that: The circuit substrate assembly comprises: A circuit substrate, wherein the circuit substrate is provided with an inverter circuit and a drive circuit. For the semiconductor circuit module with a rectification function, the circuit substrate is further provided with a rectification circuit. For the semiconductor circuit module with a PFC function, the circuit substrate is further provided with a PFC switching circuit. A pin group, wherein the number of pins in the pin group of the semiconductor circuit module with a PFC function and the pin group of the semiconductor circuit module with a rectification function is the same, and the pin group is divided into a continuously arranged high-current pin group and a continuously arranged low-current pin group, wherein the three-phase output pins in the high-current pin group connected to the three-phase output end of the inverter circuit and the three-phase floating power supply pins are continuously arranged to form a three-phase output pin group, and the other pins in the high-current pin group are arranged on one side or both sides of the three-phase output pin group; For the semiconductor circuit module with PFC function, the other pins in the high-current pin group include a PFC switch tube input pin connected to the PFC switch circuit, a PFC rectifier diode output pin, and a bus voltage input pin connected to the inverter circuit, wherein the PFC rectifier diode output pin and the bus voltage input pin are arranged consecutively, and the PFC rectifier diode output pin and the bus voltage input pin are arranged between the three-phase output pin group and the low-current pin group, and the PFC switch tube input pin is arranged on a side of the three-phase output pin group away from the low-current pin group; The electronic components of the PFC switch circuit are arranged on the input pin side of the PFC switch tube, and the wiring connecting the input pin of the PFC switch tube and the emitter output pin of the switch tube of the PFC switch circuit in the weak current pin group forms a first thermal ground wiring, and the first thermal ground wiring is arranged between the PFC switch circuit, the inverter circuit and the drive circuit; For the semiconductor circuit module with a rectifier function, the other pins in the high-voltage pin group include two AC input pins and a rectifier output positive pin connected to the rectifier circuit, wherein the two AC input pins and the rectifier output positive pin are arranged consecutively, and the rectifier output positive pin and the two AC input pins are arranged on the side of the three-phase output pin group away from the weak-voltage pin group; The four rectifier diodes of the rectifier circuit are arranged close to the two AC input pins, and the wiring connecting the negative output end of the rectifier circuit and the rectifier output negative pin forms a second thermal ground wiring, and the second thermal ground wiring is arranged between the rectifier circuit, the inverter circuit and the drive circuit.

2. The circuit substrate assembly according to claim 1, wherein: Some pins in the weak-current pin group of the semiconductor circuit module with rectification function are left blank.

3. The circuit substrate assembly according to claim 1, wherein: The three lower-arm switching tubes in the inverter circuit are grouped near the three-phase output pins, the three upper-arm switching tubes in the inverter circuit are arranged between the three lower-arm switching tubes and the drive circuit, and the drive circuit is arranged away from the three upper-arm switching tubes and the three lower-arm switching tubes. The drive chip in the drive circuit is respectively connected to the three upper-arm switching tubes and the three lower-arm switching tubes through bonding wires.

4. The circuit substrate assembly according to claim 1, wherein: The driving circuit includes a driving chip, which is provided with a weak-current bonding area group connected to the weak-current pin group and a strong-current bonding area group connected to the inverter circuit. The weak-current bonding area group and the strong-current bonding area group are independently provided and are far away from each other.

5. The circuit substrate assembly according to claim 4, wherein: The weak electric bonding area group and the strong electric bonding area group are respectively arranged close to different sides of the driving chip.

6. A semiconductor circuit module, characterized in that: The semiconductor circuit module is provided with a circuit substrate assembly according to any one of claims 1 to 5, and the semiconductor circuit module is a semiconductor circuit module with a rectification function or a semiconductor circuit module with a PFC function.

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