Nonlinear response metasurface device for MRI image enhancement based on parallel resonance

Abstract

The present application relates to a magnetic field enhancement component and a magnetic field enhancement device. The magnetic field enhancement component includes a first dielectric layer, a first electrode layer, a second electrode layer, a third electrode layer, a fourth electrode layer and a seventh control circuit. The first electrode layer and the second electrode layer are arranged on the first surface of the first dielectric layer. The third electrode layer and the fourth electrode layer are arranged on the second surface of the first dielectric layer. The first electrode layer and the third electrode layer constitute a second structural capacitor. The second electrode layer and the fourth electrode layer constitute a third structural capacitor. The seventh control circuit is connected between the first electrode layer and the second electrode layer, and includes a third capacitor, a first inductor and a first switching circuit. The circuit after the first inductor and the first switching circuit are connected in series is connected in parallel with the third capacitor. The first switching circuit is disconnected in the radio frequency transmission stage, so that the loop where the magnetic field enhancement component is located resonates with the detection part to increase the magnetic field. The first switching circuit is turned on in the radio frequency transmission stage and cannot enhance the magnetic field.

Description

Technical Field

[0001] The present application relates to the field of detection technology, and in particular to a magnetic field enhancement component and a magnetic field enhancement device. Background Art

[0002] The radio frequency coil of a traditional MRI (magnetic resonance system) collects feedback signals from the human body through coil resonance. The strength of the feedback signal from the human body affects the quality of the signal collected by the radio frequency coil, and thus affects the signal-to-noise ratio and resolution of the image.

[0003] Traditional technology increases the magnetic field strength of not only the RF signal receiving stage, but also the RF signal transmitting stage by adding metasurface devices. In traditional technology, metasurface devices are all linear metasurfaces, which cannot eliminate the impact of metasurfaces on the RF transmitting stage. The increase in magnetic field strength during the RF signal transmitting stage will reduce the quality of the detection image. Summary of the invention

[0004] Based on this, it is necessary to provide a magnetic field enhancement component and a magnetic field enhancement device to address the problem of how to improve the quality of the detected image.

[0005] A magnetic field enhancement component comprises a first dielectric layer, a first electrode layer, a second electrode layer, a third electrode layer, a fourth electrode layer and a seventh control circuit. The first dielectric layer comprises a first surface and a second surface opposite to each other. The first electrode layer and the second electrode layer are arranged at intervals on the first surface. The third electrode layer and the fourth electrode layer are arranged at intervals on the second surface. The orthographic projection of the first electrode layer on the first dielectric layer partially overlaps with the orthographic projection of the third electrode layer on the first dielectric layer. The first electrode layer, the first dielectric layer and the third electrode layer constitute a second structural capacitor. The orthographic projection of the second electrode layer on the first dielectric layer partially overlaps with the orthographic projection of the fourth electrode layer on the first dielectric layer. The second electrode layer, the first dielectric layer and the fourth electrode layer constitute a third structural capacitor.

[0006] The seventh control circuit includes a third capacitor, a first inductor and a first switch circuit. One end of the third capacitor is connected to the first electrode layer. The other end of the third capacitor is connected to the second electrode layer. One end of the first inductor is connected to the second electrode layer. The first switch circuit is connected between the other end of the first inductor and the first electrode layer. The first switch circuit is used to disconnect in the radio frequency receiving stage. The first switch circuit is also used to turn on in the radio frequency transmitting stage to put the seventh control circuit in a high impedance state.

[0007] The magnetic field enhancement component provided in the embodiment of the present application includes the first switch circuit in the magnetic field enhancement component, which is used to be disconnected during the RF receiving stage. The second structure capacitor and the third structure capacitor are connected through the third capacitor. The first switch circuit and the first inductor do not participate in the circuit conduction, so that the loop where the magnetic field enhancement component is located resonates with the detection part to increase the field strength of the detection signal. The first switch circuit is also used to be turned on during the RF transmission stage, and the third capacitor is connected in parallel with the first inductor, so that the seventh control circuit is in a high-resistance state. There is an open circuit between the second structure capacitor and the third structure capacitor. In the RF signal transmission stage, there is almost no current flowing between the second structure capacitor and the third structure capacitor, and the magnetic field generated by the loop where the magnetic field enhancement component is located is weakened, thereby reducing the influence of the loop where the magnetic field enhancement component is located on the magnetic field in the RF signal transmission stage, thereby reducing the artifacts of the detection image and improving the clarity of the detection image. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0009] Figure 1 A cross-sectional view of the magnetic field enhancement assembly provided in one embodiment of the present application;

[0010] Figure 2 This is a schematic structural diagram of the magnetic field enhancement assembly provided in one embodiment of the present application;

[0011] Figure 3 This is a schematic structural diagram of the magnetic field enhancement assembly provided in one embodiment of the present application;

[0012] Figure 4 for Figure 3 A top view of the magnetic field enhancement assembly provided in an embodiment;

[0013] Figure 5 This is a schematic structural diagram of the magnetic field enhancement assembly provided in one embodiment of the present application;

[0014] Figure 6 This is a schematic structural diagram of the magnetic field enhancement assembly provided in one embodiment of the present application;

[0015] Figure 7 This is a schematic structural diagram of the magnetic field enhancement assembly provided in one embodiment of the present application;

[0016] Figure 8 A schematic diagram of the structure of the magnetic field enhancement device provided in one embodiment of the present application;

[0017] Fig. 9 for Figure 8 Structural explosion diagram of the magnetic field enhancement device;

[0018] Fig.10 for Figure 8 and Fig. 9 Magnetic field intensity diagram of magnetic field enhancement device;

[0019] Fig.11 A schematic diagram of the structure of the magnetic field enhancement device provided in one embodiment of the present application;

[0020] Fig.12 for Fig.11 Structural explosion diagram of the magnetic field enhancement device;

[0021] Fig.13 A side view of the magnetic field enhancement assembly provided in one embodiment of the present application; a structural schematic diagram;

[0022] Fig.14 for Fig.13 A top view of the magnetic field enhancement assembly provided in;

[0023] Fig.15 A schematic diagram of the structure of the magnetic field enhancement device provided in one embodiment of the present application;

[0024] Fig.16 A schematic diagram of the structure of the magnetic field enhancement device provided in one embodiment of the present application;

[0025] Fig.17 An electrical connection diagram of the magnetic field enhancement assembly provided in one embodiment of the present application;

[0026] Fig.18 for Fig.17 A top view of the magnetic field enhancement assembly;

[0027] Fig.19 A schematic diagram of an orthographic projection of a first electrode layer and a second electrode layer on the first dielectric layer provided in one embodiment of the present application;

[0028] Fig. 20 A schematic diagram of the orthographic projection shapes of the first electrode layer and the second electrode layer on the first dielectric layer provided in another embodiment of the present application.

[0029] Figure Number:

[0030] Magnetic field enhancement component 10; first dielectric layer 100; first surface 101; second surface 102; first end 103; second end 104; first electrode layer 110; first sub-electrode layer 111; first connection layer 190; second electrode layer 120; third electrode layer 130; fourth electrode layer 140; seventh control circuit 630; third capacitor 223; first inductor 241; first switch circuit 631; third diode 213; fourth diode 214; fifth enhancement mode MOS transistor 235; sixth enhancement mode MOS transistor 236; fifth electrode layer 141; third inductor 243; second structure capacitor 302; third structure capacitor 303; fourth structure capacitor 304; fourth capacitor 224;

[0031] Via hole 103; first structure capacitor 150; first notch 411; second notch 412; third notch 413; fourth notch 414;

[0032] Magnetic field enhancement device 20; cylindrical support structure 50; first annular conductive sheet 510; second annular conductive sheet 520; third end 51; fourth end 53; fixing structure 930; first fixing member 931; second fixing member 932; control connection port 513; first connection end 511; second connection end 512. DETAILED DESCRIPTION

[0033] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. Many specific details are set forth in the following description to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific implementation disclosed below.

[0034] The serial numbers for the components herein, such as "first", "second", etc., are only used to classify the objects described and do not have any order or technical meaning. The "connection" and "coupling" mentioned in this application, unless otherwise specified, include direct and indirect connections (couplings). In the description of this application, it should be understood that the orientation or position relationship indicated by the terms "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", etc. are based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing this application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to this application.

[0035] In the present application, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being “above”, “above”, and “above” a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0036] See also Figure 1 An embodiment of the present application provides a magnetic field enhancement component 10, including a first dielectric layer 100, a first electrode layer 110, a second electrode layer 120, a third electrode layer 130, a fourth electrode layer 140 and the seventh control circuit 630.

[0037] The first dielectric layer 100 has a first end 103 and a second end 104 opposite to each other. The first dielectric layer 100 includes a first surface 101 and a second surface 102 opposite to each other. The first electrode layer 110 and the third electrode layer 130 are arranged near the first end 103. The second electrode layer 120 and the fourth electrode layer 140 are arranged near the second end 104. The orthographic projection of the first electrode layer 110 on the first dielectric layer 100 partially overlaps with the orthographic projection of the third electrode layer 130 on the first dielectric layer 100. The first electrode layer 110, the first dielectric layer 100 and the third electrode layer 130 constitute a second structural capacitor 302. The orthographic projection of the second electrode layer 120 on the first dielectric layer 100 partially overlaps with the orthographic projection of the fourth electrode layer 140 on the first dielectric layer 100. The second electrode layer 120, the first dielectric layer 100 and the fourth electrode layer 140 constitute a third structural capacitor 303.

[0038] The seventh control circuit 630 includes a third capacitor 223, a first inductor 241 and a first switch circuit 631. One end of the third capacitor 223 is connected to the first electrode layer 110. The other end of the third capacitor 223 is connected to the second electrode layer 120. One end of the first inductor 241 is connected to the second electrode layer 120. The first switch circuit 631 is connected between the other end of the first inductor 241 and the first electrode layer 110. The first switch circuit 631 is used to be disconnected in the RF receiving stage. The first switch circuit 631 is also used to be turned on in the RF transmitting stage to put the seventh control circuit 630 in a high impedance state.

[0039] The first dielectric layer 100 can play a role in supporting the first electrode layer 110, the second electrode layer 120, the third electrode layer 130 and the fourth electrode layer 140. The first dielectric layer 100 can be a rectangular plate-like structure. The first dielectric layer 100 can be an insulating material. In one embodiment, the material of the first dielectric layer 100 can be a glass fiber epoxy resin board. The first electrode layer 110, the second electrode layer 120, the third electrode layer 130 and the fourth electrode layer 140 can also be a rectangular plate-like structure. The materials of the first electrode layer 110, the second electrode layer 120, the third electrode layer 130 and the fourth electrode layer 140 can be made of conductive non-magnetic materials. In one embodiment, the materials of the first electrode layer 110, the second electrode layer 120, the third electrode layer 130 and the fourth electrode layer 140 can be metal materials such as gold, silver, and copper.

[0040] The first switch circuit 631 in the magnetic field enhancement component 10 provided in the embodiment of the present application is used to be disconnected during the RF receiving stage. The second structure capacitor 302 and the third structure capacitor 303 are connected through the third capacitor 223. The first switch circuit 631 and the first inductor 241 do not participate in the circuit conduction, so that the loop where the magnetic field enhancement component 10 is located resonates with the detection part to increase the field strength of the detection signal. The first switch circuit 631 is also used to be turned on during the RF transmission stage, and the third capacitor 223 is connected in parallel with the first inductor 241, so that the seventh control circuit 630 is in a high-resistance state. The second structure capacitor 302 and the third structure capacitor 303 are disconnected. In the RF signal transmission stage, there is almost no current flowing between the second structure capacitor 302 and the third structure capacitor 303, and the magnetic field generated by the loop where the magnetic field enhancement component 10 is located is weakened, thereby reducing the influence of the loop where the magnetic field enhancement component 10 is located on the magnetic field in the RF signal transmission stage, thereby reducing the artifacts of the detection image and improving the clarity of the detection image.

[0041] The magnetic field enhancement component 10 is a nonlinear response MRI image enhancement metasurface device based on parallel resonance. The first switch circuit 631 may include a capacitor, an inductor and a switch device in parallel. By controlling the on and off of the switch device, the capacitor and the inductor can be parallel resonated in the RF transmission stage and present a high impedance state. The loop where the nonlinear response MRI image enhancement metasurface device based on parallel resonance is located reduces the influence of the magnetic field in the RF signal transmission stage, reduces the artifacts of the detection image, and improves the clarity of the detection image. By controlling the on and off of the switch device, the capacitor and the inductor do not resonate in parallel in the RF reception stage. The loop where the nonlinear response MRI image enhancement metasurface device based on parallel resonance is located is used to resonate with the detection part in the RF reception stage to enhance the magnetic field strength of the detection signal.

[0042] The first switch circuit 631 may be controlled by a control circuit. In one embodiment, the first switch circuit 631 includes a switch element and a control end. One end of the switch element is connected to an end of the first inductor 241 away from the second electrode layer 120. The other end of the switch element is connected to the first electrode layer 110. The control end is connected to an external control device. The control end is used to receive closing and opening commands. In the RF transmission stage, the control device outputs a closing command to the control end. When the control end receives the closing command, the first inductor 241 is turned on with the first electrode layer 110. The first inductor 241 is connected in parallel with the third capacitor 223, parallel resonance occurs, and is in a high-impedance state; there is almost no current flowing between the first electrode layer 110 and the second electrode layer 120.

[0043] In the RF receiving stage, the control device outputs a closing command to the control terminal. When the control terminal receives a disconnection command, the first inductor 241 is disconnected from the first electrode layer 110. The first electrode layer 110, the third capacitor 223 and the second electrode layer 120 are connected in series to form a part of a resonant circuit.

[0044] In one embodiment, the first switch circuit 631 includes a third diode 213 and a fourth diode 214. The anode of the third diode 213 is connected to the first electrode layer 110. The cathode of the third diode 213 is connected to the other end of the first inductor 241. The anode of the fourth diode 214 is connected to the other end of the first inductor 241, and the cathode of the fourth diode 214 is connected to the first electrode layer 110.

[0045] The loop where the magnetic field enhancement component 10 is located is applied to the MRI system to enhance the magnetic field strength of the human body feedback signal in the radio frequency receiving stage. In the radio frequency transmission stage of the MRI system, the magnetic field energy in the transmission stage is more than 1000 times the magnetic field energy in the receiving stage. The induced voltage of the loop where the magnetic field enhancement component 10 is located in the transmission stage is between tens of volts and hundreds of volts. The induced voltage of the loop where the magnetic field enhancement component 10 is located in the receiving stage is less than 1V.

[0046] The third diode 213 and the fourth diode 214 are connected in reverse parallel. In the RF transmission stage, the RF coil transmits the RF transmission signal, and the field strength of the magnetic field is relatively large. The induced voltage generated by the loop where the magnetic field enhancement component 10 is located is relatively large. The voltage loaded on both ends of the third diode 213 and the fourth diode 214 alternates positive and negative. The loaded voltage exceeds the turn-on voltage of the third diode 213 and the fourth diode 214, and the third diode 213 and the fourth diode 214 are turned on. The third capacitor 223 is connected in parallel with the first inductor 241, so that the seventh control circuit 630 is in a high-resistance state. In the RF signal transmission stage, there is almost no current flowing between the second structure capacitor 302 and the third structure capacitor 303, and the magnetic field generated by the loop where the magnetic field enhancement component 10 is located is weakened, thereby reducing the influence of the loop where the magnetic field enhancement component 10 is located on the magnetic field in the RF signal transmission stage, thereby reducing the artifacts of the detection image and improving the clarity of the detection image.

[0047] In the RF receiving stage, the detection part transmits a feedback signal, and the field strength of the magnetic field is small. The induced voltage generated by the magnetic field enhancement component 10 is small. The loaded voltage cannot reach the turn-on voltage of the third diode 213 and the fourth diode 214, and the third diode 213 and the fourth diode 214 are not conducting. The second structure capacitor 302 and the third structure capacitor 303 are connected through the third capacitor 223, and the magnetic field enhancement device 20 composed of multiple magnetic field enhancement components 10 is in a resonant state, which plays a role in enhancing the magnetic field.

[0048] In one embodiment, the turn-on voltages of the third diode 213 and the fourth diode 214 are both between 0 and 1 V. In one embodiment, the turn-on voltages of the third diode 213 and the fourth diode 214 are the same, so that the magnetic field strength of the magnetic field enhancement device 20 is continuously increased during the RF receiving stage, thereby improving the stability of the feedback signal. In one embodiment, the turn-on voltages of the third diode 213 and the fourth diode 214 are 0.8 V.

[0049] In one embodiment, the third diode 213 and the fourth diode 214 are of the same model, and the voltage drops of the third diode 213 and the fourth diode 214 after being turned on are the same, so that the increase amplitude of the magnetic field strength of the magnetic field enhancement device 20 in the RF receiving stage is the same, further improving the stability of the feedback signal.

[0050] Please also see Figure 2 In one embodiment, the first switch circuit 631 includes a fifth enhancement mode MOS transistor 235 and a sixth enhancement mode MOS transistor 236. The drain and gate of the fifth enhancement mode MOS transistor 235 are respectively connected to one end of the first inductor 241 away from the second electrode layer 120. The source of the fifth enhancement mode MOS transistor 235 is connected to the first electrode layer 110. The drain and gate of the sixth enhancement mode MOS transistor 236 are respectively connected to the first electrode layer 110. The source of the sixth enhancement mode MOS transistor 236 is connected to one end of the first inductor 241 away from the second electrode layer 120.

[0051] The fifth enhancement mode MOS transistor 235 and the sixth enhancement mode MOS transistor 236 are connected in reverse parallel. In the RF transmission stage, the RF coil transmits the RF transmission signal, and the field strength of the magnetic field is relatively large. The induced voltage generated by the loop where the magnetic field enhancement component 10 is located is relatively large. The voltage loaded on both ends of the fifth enhancement mode MOS transistor 235 and the sixth enhancement mode MOS transistor 236 is alternately positive and negative. When the loaded voltage exceeds the pinch-off voltage of the fifth enhancement mode MOS transistor 235 and the sixth enhancement mode MOS transistor 236, the source and drain of the fifth enhancement mode MOS transistor 235 are turned on and the source and drain of the sixth enhancement mode MOS transistor 236 are alternately turned on. The third capacitor 223 is connected in parallel with the first inductor 241, so that the seventh control circuit 630 is in a high-impedance state. In the RF signal transmission stage, almost no current flows between the second structure capacitor 302 and the third structure capacitor 303, and the magnetic field generated by the loop where the magnetic field enhancement component 10 is located is weakened, thereby reducing the influence of the loop where the magnetic field enhancement component 10 is located on the magnetic field in the RF signal transmission stage, thereby reducing the artifacts of the detection image and improving the clarity of the detection image.

[0052] In the RF receiving stage, the detection part transmits a feedback signal, and the field strength of the magnetic field is small. The induced voltage generated by the loop where the magnetic field enhancement component 10 is located is small. The loaded voltage cannot reach the pinch-off voltage of the fifth enhancement MOS tube 235 and the sixth enhancement MOS tube 236, and the source and drain of the fifth enhancement MOS tube 235 are turned on and the source and drain of the sixth enhancement MOS tube 236 are not turned on. The second structure capacitor 302 and the third structure capacitor 303 are connected through the third capacitor 223, and the magnetic field enhancement device 20 composed of multiple magnetic field enhancement components 10 is in a resonant state, which plays a role in enhancing the magnetic field.

[0053] In one embodiment, the pinch-off voltages of the fifth enhancement mode MOS transistor 235 and the sixth enhancement mode MOS transistor 236 are both between 0 and 1V, and the pinch-off voltages of the fifth enhancement mode MOS transistor 235 and the sixth enhancement mode MOS transistor 236 are the same, so that the magnetic field enhancement device 20 can stably enhance the magnetic field in the RF receiving stage, and the feedback signal can be stably output. In one embodiment, the pinch-off voltages of the fifth enhancement mode MOS transistor 235 and the sixth enhancement mode MOS transistor 236 are 0.8V.

[0054] Please also see Figure 3 In one embodiment, the first electrode layer 110 further includes a first sub-electrode layer 111 and a first connecting layer 190. The first sub-electrode layer 111 is connected to the first connecting layer 190. The first connecting layer 190 is arranged close to the second electrode layer 120. The orthographic projection of the first sub-electrode layer 111 on the first dielectric layer 100 partially overlaps with the orthographic projection of the third electrode layer 130 on the first dielectric layer 100. One end of the third capacitor 223 is connected to one end of the first connecting layer 190 close to the first sub-electrode layer 111. The other end of the third capacitor 223 is connected to the second electrode layer 120. The first switch circuit 631 is connected between one end of the first connecting layer 190 far from the first sub-electrode layer 111 and the second electrode layer 120. The first connecting layer 190 constitutes the first inductor 241.

[0055] The circuit after the first switch circuit 631 and the first connection layer 190 are connected in series is then connected in parallel with the third capacitor 223. The seventh control circuit 630 is connected in series between the first electrode layer 110 and the second electrode layer 120. The first sub-electrode layer 111 and the first connection layer 190 can be formed by spraying. The first sub-electrode layer 111 and the first connection layer 190 are laid on the same layer to save process. The first sub-electrode layer 111 is used to form a part of the structural capacitor. The first connection layer 190 is used to form a structural inductor, without the need for an external inductor, saving costs.

[0056] Please also see Figure 4 In one embodiment, the width of the first connection layer 190 is smaller than the first sub-electrode layer 111. The device in which the magnetic field enhancement component 10 is located covers the detection part, and enhances the magnetic field of the feedback signal of the detection part by resonance. Since the width of the first connection layer 190 in the magnetic field enhancement component 10 is smaller than the width of the first sub-electrode layer 111, the area of ​​the detection part covered by the first electrode layer 110 is reduced, the shielding effect of the first electrode layer 110 is weakened, and the transmission capacity of the feedback signal is enhanced. The radio frequency coil is more likely to receive the feedback signal, thereby improving the quality of the received signal and improving the quality of the image formed after the signal is processed. In addition, when multiple magnetic field enhancement components 10 are used in combination, the relative overlapping area between the first connection layers 190 in different magnetic field enhancement components 10 is reduced, the stray capacitance formed by the first connection layers 190 in different magnetic field enhancement components 10 and the air is reduced, the coupling effect is reduced, and the signal quality is improved.

[0057] In one embodiment, the electric loss of the first connection layer 190 accounts for less than 1 / 2 of the overall electric loss of the magnetic field enhancement assembly 10. The smaller the electric loss of the first connection layer 190, the smaller the heat generated by the magnetic field enhancement assembly 10, and the better the magnetic field enhancement effect.

[0058] In one embodiment, the width of the first connection layer 190 is 1 / 5 to 1 / 2 of the width of the first sub-electrode layer 111. When the width of the first connection layer 190 is 1 / 5 to 1 / 2 of the width of the first sub-electrode layer 111, it can be ensured that the proportion of the electric loss of the first connection layer 190 in the magnetic field enhancement component 10 is less than 1 / 2 of the overall electric loss. The electric loss of the first connection layer 190 is small, and the heat generated by the magnetic field enhancement component 10 is small. The energy of the magnetic field enhancement component 10 is mainly used to generate a magnetic field, and the magnetic field enhancement effect in the receiving stage is better.

[0059] Please also see Figure 5In one embodiment, the magnetic field enhancement assembly 10 further includes a fifth electrode layer 141. The fifth electrode layer 141 is disposed on the second surface 102 and is spaced between the third electrode layer 130 and the fourth electrode layer 140. The orthographic projection of the fifth electrode layer 141 on the first dielectric layer 100 partially overlaps with the orthographic projection of the first electrode layer 110 on the first dielectric layer 100. The fifth electrode layer 141, the first dielectric layer 100 and the first electrode layer 110 constitute the fourth structural capacitor 304. The orthographic projection of the fifth electrode layer 141 on the first dielectric layer 100 partially overlaps with the orthographic projection of the second electrode layer 120 on the first dielectric layer 100. The fifth electrode layer 141, the first dielectric layer 100 and the second electrode layer 120 constitute the third capacitor 223.

[0060] The third structure capacitor 303, the third capacitor 223, the fourth structure capacitor 304 and the second structure capacitor 302 are connected in series. The other non-capacitive structural parts of the first electrode layer 110 and the second electrode layer 120 are used for conduction. The first switch circuit 631 and the first inductor 241 are connected in series to form a first circuit. The part of the fifth electrode layer 141 opposite to the second electrode layer 120 is connected in series with the fourth structure capacitor 304 to form a second circuit. The first circuit and the second circuit are connected in parallel to form the seventh control circuit 630. The seventh control circuit 630 uses laid electrodes to form a capacitor, without the need for external capacitors, saving costs.

[0061] Please also see Figure 6 In one embodiment, the seventh control circuit 630 further includes a third inductor 243. The first inductor 241, the first switch circuit 631 and the third inductor 243 are connected in series in sequence. One end of the third inductor 243 is connected to the first electrode layer 110. The other end of the third inductor 243 is connected to the first switch circuit 631. The first inductor 241 and the third inductor 243 are respectively connected to the two ends of the first switch circuit 631, increasing the symmetry of the structure of the magnetic field enhancement component 10, thereby increasing the symmetry of the magnetic field of the magnetic field enhancement component 10, and reducing the distortion caused by inconsistent magnetic field enhancement.

[0062] Please also see Figure 7In one embodiment, the seventh control circuit 630 further includes a fourth capacitor 224. The fourth capacitor 224 is connected between the third capacitor 223 and the first electrode layer 110. The fourth capacitor 224 is connected in series with the third capacitor 223. The fourth capacitor 224 is used to reduce the voltage division of the third capacitor 223, improve the ability of the magnetic field enhancement component 10 to resist a strong magnetic field, and reduce the probability of the third capacitor 223 being broken down.

[0063] In one embodiment, the capacitance values ​​of the second structure capacitor 302, the third structure capacitor 303, the third capacitor 223 and the fourth capacitor 224 are all equal. In the RF receiving stage, the divided voltages on the second structure capacitor 302, the third structure capacitor 303, the third capacitor 223 and the fourth capacitor 224 are the same, which improves the uniformity of the magnetic field, reduces the distortion caused by the inconsistent magnetic field enhancement, and improves the image quality.

[0064] Please also see Figure 8 and Fig. 9 The embodiment of the present application provides a magnetic field enhancement device 20, which includes a cylindrical support structure 50, a plurality of magnetic field enhancement components 10, a first annular conductive sheet 510, and a second annular conductive sheet 520. The cylindrical support structure 50 has two spaced-apart third ends 51 and a fourth end 53. The cylindrical support structure 50 surrounds a detection space. The plurality of magnetic field enhancement components 10 are spaced apart on the cylindrical support structure 50. The plurality of magnetic field enhancement components 10 extend along the third end 51 to the fourth end 53. The magnetic field enhancement component 10 is the magnetic field enhancement component 10 described in any of the above embodiments. The first electrode layer 110 and the third electrode layer 130 are arranged near the third end 51. The second electrode layer 120 and the fourth electrode layer 140 are arranged near the fourth end 53. The first annular conductive sheet 510 is arranged on the cylindrical support structure 50 and near the third end 51. The first annular conductive sheet 510 is electrically connected to the third electrode layer 130 of the plurality of magnetic field enhancement components 10. The second annular conductive sheet 520 is disposed on the cylindrical support structure 50 and is close to the fourth end 53. The second annular conductive sheet 520 is electrically connected to the fourth electrode layer 140 of the plurality of magnetic field enhancement assemblies 10.

[0065] Please also see Fig.10, the first connection layer 190 of the plurality of magnetic field enhancement components 10 in the magnetic field enhancement device 20 provided in the embodiment of the present application is connected in parallel through the second annular conductive sheet 520 to form an LC oscillation circuit. The resonant frequency of the magnetic field enhancement device 20 is equal to the target resonant frequency, which can enhance the feedback signal of the detection part. The first switch circuit 631 is used to disconnect during the RF receiving stage. The second structure capacitor 302 and the third structure capacitor 303 are connected through the third capacitor 223, and the first switch circuit 631 and the first inductor 241 do not participate in the circuit conduction. The first switch circuit 631 is also used to conduct during the RF transmission stage, and the third capacitor 223 is connected in parallel with the first inductor 241 to cause parallel resonance, so that the seventh control circuit 630 is in a high-impedance state. The second structure capacitor 302 and the third structure capacitor 303 are disconnected. The frequency of the feedback signal transmitted by the magnetic field enhancement device 20 is the same as that of the detection part, and the magnetic field enhancement device 20 resonates to enhance the magnetic field strength of the feedback signal. During the RF signal transmission stage, almost no current flows between the second structure capacitor 302 and the third structure capacitor 303, and the magnetic field generated by the magnetic field enhancement device 20 is weakened, thereby reducing the influence of the magnetic field enhancement device 20 on the magnetic field during the RF signal transmission stage, thereby reducing artifacts of the detection image and improving the clarity of the detection image.

[0066] In addition, a plurality of the magnetic field enhancement components 10 are distributed in a circular array on the cylindrical support structure 50. The cylindrical support structure 50 has a symmetrical structure, a uniform magnetic field distribution, and a consistent enhancement effect on the feedback signal. In addition, the magnetic field enhancement device 20 can be mounted on the arms, legs, hands, etc. of the human body, which is close to the detection part, thereby improving the detection sensitivity.

[0067] The cylindrical support structure 50 may also be replaced by a flat support structure or a curved support structure. The first annular conductive sheet 510 and the second annular conductive sheet 520 may be replaced by a straight conductive sheet or a curved conductive sheet to adapt to a flat support structure or a curved support structure.

[0068] In one embodiment, the magnetic field enhancement device 20 further includes a plurality of fixing structures 930. The plurality of fixing structures 930 are disposed on the outer surface of the cylindrical support structure 50 and arranged in a circular array. The plurality of fixing structures 930 are used to fix the magnetic field enhancement components 10 one by one. The magnetic field enhancement components 10 can be fixed to the cylindrical support structure 50 by the fixing structures 930.

[0069] The fixing structure 930 may be a strap or a buckle, etc. The magnetic field enhancement assembly 10 is detachably fixed to the cylindrical support structure 50 via the fixing structure 930 .

[0070] In one embodiment, the fixing structure 930 includes a first fixing member 931 and a second fixing member 932 arranged at intervals. The first fixing member 931 is arranged near the third end 51. The first fixing member 931 is used to fix one end of the magnetic field enhancement component 10. The second fixing member 932 is arranged near the fourth end 53. The second fixing member 932 is used to fix the other end of the magnetic field enhancement component 10. The first fixing member 931 and the second fixing member 932 are respectively used to fix the two ends of the magnetic field enhancement component 10.

[0071] In one embodiment, the first fixing member 931 and the second fixing member 932 include U-shaped buckles. The first fixing member 931 and the second fixing member 932 are buckled on the outer surface of the cylindrical support structure 50. The opening of the U-shaped space of the first fixing member 931 and the second fixing member 932 faces the third end 51 or the fourth end 53. The U-shaped space of the first fixing member 931 and the second fixing member 932 is used to penetrate the magnetic field enhancement component 10. If the magnetic field enhancement component 10 needs to be replaced, the magnetic field enhancement component 10 only needs to be pulled out or inserted into the U-shaped space of the first fixing member 931 and the second fixing member 932.

[0072] Please also see Fig.11 and Fig.12 In one embodiment, the first annular conductive sheet 510 includes a control connection port 513. The control connection port 513 includes a first connection end 511 and a second connection end 512. The first connection end 511 and the second connection end 512 are respectively connected to the third electrode layer 130 of two adjacent magnetic field enhancement components 10. The seventh control circuit 630 is connected between the first connection end 511 and the second connection end 512. It can be understood that one end of the third capacitor 223 is connected to the first connection end 511. The other end of the third capacitor 223 is connected to the second connection end 512. One end of the first inductor 241 is connected to the first connection end 511. The first switch circuit 631 is connected between the other end of the first inductor 241 and the second connection end 512. The first switch circuit 631 is used to disconnect in the RF receiving stage. The first switch circuit 631 is also used to turn on in the RF transmitting stage to put the seventh control circuit 630 in a high impedance state.

[0073] The first switch circuit 631 is disconnected during the RF receiving phase. The first connection terminal 511 and the second connection terminal 512 are connected via the third capacitor 223. The first switch circuit 631 and the first inductor 241 do not participate in the circuit conduction. The magnetic field enhancement device 20 has the same frequency as the feedback signal emitted by the detection part, and the magnetic field enhancement device 20 resonates to enhance the magnetic field strength of the feedback signal.

[0074] In the RF signal transmission stage, the first switch circuit 631 is turned on, and the third capacitor 223 is connected in parallel with the first inductor 241, so that the seventh control circuit 630 is in a high impedance state. The first connection terminal 511 and the second connection terminal 512 are disconnected. The connection relationship of the components in the magnetic field enhancement device 20 is changed, and the resonant frequency is changed. The resonant frequency of the magnetic field enhancement device 20 is not equal to the target frequency, and the magnetic field enhancement device 20 does not have the function of enhancing the magnetic field, thereby reducing the artifacts of the detection image and improving the clarity of the detection image.

[0075] In one embodiment, the first annular conductive sheet 510 includes a plurality of control connection ports 513 and a plurality of seventh control circuits 630 arranged at intervals. Both ends of each control connection port 513 are respectively connected to the third electrode layers 130 of two adjacent magnetic field enhancement components 10. Each control connection port 513 is connected to one seventh control circuit 630 to cut off the current between the two adjacent magnetic field enhancement components 10 during the emission phase, thereby reducing the influence of the loop current between the two adjacent magnetic field enhancement components 10 on the emission phase.

[0076] See also Fig.13 and Fig.14 In one embodiment, the magnetic field enhancement component 10 includes a first dielectric layer 100 , a first electrode layer 110 , a second electrode layer 120 and a third electrode layer 130 .

[0077] The first dielectric layer 100 has a first end 103 and a second end 104 opposite to each other, and includes a first surface 101 and a second surface 102 opposite to each other. The first electrode layer 110 is disposed on the first surface 101 and extends from the first end 103 to the second end 104. The first electrode layer 110 includes a first sub-electrode layer 111, a second sub-electrode layer 112 and a first connection layer 190. The first sub-electrode layer 111 and the second sub-electrode layer 112 have equal widths and are arranged relatively spaced apart. One end of the first connection layer 190 is connected to the first sub-electrode layer 111, and the other end of the first connection layer 190 is connected to the second sub-electrode layer 112. The width of the first connection layer 190 is smaller than the width of the first sub-electrode layer 111 or the second sub-electrode layer 112.

[0078] The second electrode layer 120 and the third electrode layer 130 are arranged on the second surface 102 with a relative spacing. The orthographic projection of the second electrode layer 120 on the first dielectric layer 100 partially overlaps with the orthographic projection of the first sub-electrode layer 111 on the first dielectric layer 100. The second electrode layer 120, the first dielectric layer 100 and the first sub-electrode layer 111 constitute a second structural capacitor 302. The orthographic projection of the third electrode layer 130 on the first dielectric layer 100 partially overlaps with the orthographic projection of the second sub-electrode layer 112 on the first dielectric layer 100. The third electrode layer 130, the first dielectric layer 100 and the second sub-electrode layer 112 constitute a third structural capacitor 303.

[0079] The first dielectric layer 100 can play a role in supporting the first electrode layer 110, the second electrode layer 120 and the third electrode layer 130. The first dielectric layer 100 can be an insulating material. The first dielectric layer 100 can be a rectangular plate-like structure. The first dielectric layer 100 can be an insulating material. In one embodiment, the material of the first dielectric layer 100 can be a glass fiber epoxy resin board. The materials of the first electrode layer 110, the second electrode layer 120 and the third electrode layer 130 can be made of conductive non-magnetic materials. In one embodiment, the materials of the first electrode layer 110, the second electrode layer 120 and the third electrode layer 130 can be metal materials such as gold, silver, and copper.

[0080] The first conductive sheets 510 are respectively connected to the second electrode layers 120 of the plurality of magnetic field enhancement components 10. The second conductive sheets 520 are respectively connected to the third electrode layers 130 of the plurality of magnetic field enhancement components 10.

[0081] The second structure capacitor 302 and the third structure capacitor 303 in the magnetic field enhancement component 10 are connected through the first connection layer 190 to form a resonant circuit. The magnetic field enhancement component 10 covers the detection part and enhances the magnetic field of the feedback signal of the detection part by resonance. The width of the first connection layer 190 in the magnetic field enhancement component 10 is less than the width of the first sub-electrode layer 111. The area of ​​the detection part covered by the first electrode layer 110 is reduced, the shielding effect of the first electrode layer 110 is weakened, and the transmission capacity of the feedback signal is enhanced. The RF coil is more likely to receive the feedback signal, thereby improving the quality of the received signal and the quality of the image formed after the signal is processed.

[0082] In addition, the plurality of magnetic field enhancement components 10 are arranged in an array, and the stray capacitance formed between the first connection layer 190 in the magnetic field enhancement component 10, the air and the detection cylinder is reduced, the coupling effect is reduced, and the signal quality is improved.

[0083] In one embodiment, the electric loss of the first connection layer 190 accounts for less than 1 / 2 of the overall electric loss of the magnetic field enhancement component 10. The electric loss of the first connection layer 190 is small, and the heat generated by the magnetic field enhancement component 10 is small. The energy of the magnetic field enhancement component 10 is mainly used to generate a magnetic field, and the magnetic field enhancement effect is better in the receiving stage.

[0084] In one embodiment, the width of the first connection layer 190 is 1 / 5 to 1 / 2 of the width of the first sub-electrode layer 111. When the width of the first connection layer 190 is 1 / 5 to 1 / 2 of the width of the first sub-electrode layer 111, it can be ensured that the proportion of the electric loss of the first connection layer 190 in the magnetic field enhancement component 10 is less than 1 / 2 of the overall electric loss. The electric loss of the first connection layer 190 is small, and the heat generated by the magnetic field enhancement component 10 is small. The energy of the magnetic field enhancement component 10 is mainly used to generate a magnetic field, and the magnetic field enhancement effect in the receiving stage is better.

[0085] In one embodiment, the width of the first sub-electrode layer 111 and the second sub-electrode layer 112 is 1 mm to 30 mm. The first connection layer 190 is 1 mm to 15 mm. In one embodiment, the width of the first sub-electrode layer 111 and the second sub-electrode layer 112 is 15 mm, and the width of the first connection layer 190 is 4 mm.

[0086] Please also see Fig.15 In one embodiment, the angle between the extension direction of the first connection layer 190 and the first direction b is an acute angle or an obtuse angle. The first direction b points from the first end 103 to the second end 104. When the curved magnetic field enhancement device 20 includes a cylindrical support structure 50, a first conductive sheet 510, a second conductive sheet 520 and a plurality of the magnetic field enhancement components 10. When the cylindrical support structure 50 is a cylindrical structure, the plurality of magnetic field enhancement components 10 are arranged in parallel at intervals in the cylindrical support structure 50. The plurality of magnetic field enhancement components 10 are connected in parallel. In the curved magnetic field enhancement device 20, the first connection layers 190 in the two opposite magnetic field enhancement components 10 are staggered, and the parallel overlapping portion is reduced. The stray capacitance formed between the first connection layer 190 in the two opposite magnetic field enhancement components 10 and the air is reduced, the coupling effect is reduced, and the signal quality is improved.

[0087] Please also see Fig.16In one embodiment, an arc chamfer is provided at the intersection of the sidewall of the first connection layer 190 and the sidewall of the first sub-electrode layer 111 or the second sub-electrode 112. Current flows in the first sub-electrode layer 111, the first connection layer 190 and the second sub-electrode layer 112. The width of the first connection layer 190 is smaller than the width of the first sub-electrode layer 111. The current is collected at the connection between the first sub-electrode layer 111 and the first connection layer 190, and the current density increases. An arc chamfer is provided at the intersection of the sidewall of the first connection layer 190 and the sidewall of the first sub-electrode layer 111, so that the first connection layer 190 and the first sub-electrode layer 111 are connected through a trumpet-shaped structure, slowing down the sudden change of current density and reducing the current density at the intersection of the sidewall of the first connection layer 190 and the sidewall of the first sub-electrode layer 111. The current density at the connection between the first connection layer 190 and the first sub-electrode layer 111 is reduced, the heat generation is reduced, and the service life of the magnetic field enhancement component 10 is improved.

[0088] The current is collected at the connection between the second sub-electrode layer 112 and the first connection layer 190, and the current density increases. An arc chamfer is provided at the intersection of the side wall of the first connection layer 190 and the side wall of the second sub-electrode layer 112, so that a trumpet-shaped structure is formed at the connection between the first connection layer 190 and the second sub-electrode layer 112. The trumpet-shaped structure formed at the connection between the first connection layer 190 and the second sub-electrode layer 112 can slow down the sudden change of current density, thereby reducing the current density at the intersection of the side wall of the first connection layer 190 and the side wall of the second sub-electrode layer 112. The current density at the connection between the second sub-electrode layer 112 and the first connection layer 190 is reduced, which can reduce the heat generation, thereby extending the service life of the magnetic field enhancement component 10.

[0089] See also Fig.17 and Fig.18In one embodiment, the magnetic field enhancement component 10 includes a first electrode layer 110, a second electrode layer 120, a third electrode layer 120 and a first dielectric layer 100. The first dielectric layer 100 has a first end 103 and a second end 104 opposite to each other. The first dielectric layer 100 includes a first surface 101 and a second surface 102 opposite to each other. The first electrode layer 110 and the third electrode layer 120 are arranged on the first surface 101 at intervals. The first dielectric layer 100 is provided with a via 103. The via 103 is provided with an electrode material. The third electrode layer 130 is electrically connected to the second electrode layer 120 through the electrode material. The orthographic projection of the first electrode layer 110 on the first dielectric layer 100 partially overlaps with the orthographic projection of the second electrode layer 120 on the first dielectric layer 100, and the first electrode layer 110, the first dielectric layer 100 and the second electrode layer 120 form a first structural capacitor 150.

[0090] The first electrode layer 110 and the third electrode layer 130 that do not overlap with the second electrode layer 120 form a structural inductor. The first electrode layer 110, the third electrode layer 130 and the first structural capacitor 150 in the magnetic field enhancement component 10 form an LC oscillation circuit.

[0091] See also Fig.19 In one embodiment, the first electrode layer 110 has a first notch 411 at one end close to the second electrode layer 120. The second electrode layer 120 has a second notch 412 at one end close to the first electrode layer 110. The orthographic projections of the first notch 411 and the second notch 412 on the first dielectric layer 100 overlap. The sizes of the first notch 411 and the second notch 412 may be the same.

[0092] When the magnetic field enhancement component 10 is placed in the excitation field of the magnetic resonance system, the overlapping part of the orthographic projection of the first electrode layer 110 and the second electrode layer 120 on the first dielectric layer 100 can constitute the first structural capacitor 150. The first notch 411 and the second notch 412 can change the electric field distribution in the first structural capacitor 150. The first notch 411 and the second notch 412 can optimize the local magnetic field distribution and improve the detection effect of a specific position of the detection site.

[0093] See also Fig. 20In one embodiment, the first electrode layer 110 has a third notch 413 at one end close to the second electrode layer 120. The third notch 413 is spaced apart from the first notch 411. The second electrode layer 120 has a fourth notch 414 at one end close to the first electrode layer 110. The fourth notch 414 is spaced apart from the second notch 412. The orthographic projections of the third notch 413 and the fourth notch 414 on the first dielectric layer 100 overlap. It can be understood that the first notch 411 and the third notch 413 may have the same shape and size. The second notch 412 and the fourth notch 414 may have the same size and shape. The distance between the first notch 411 and the third notch 413 may be the same. The distance between the second notch 412 and the fourth notch 414 may be the same. The third notch 413 and the fourth notch 414 may be located at the overlapping portion of the orthographic projections of the first electrode layer 110 and the second electrode layer 120 on the first dielectric layer 100. The third notch 413 and the fourth notch 414 further optimize the local magnetic field distribution and improve the detection effect at a specific position of the detection area.

[0094] The first conductive sheet 510 is connected to one end of the first electrode layer 110 of the plurality of magnetic field enhancement assemblies 10 away from the third electrode layer 130 . The second conductive sheet 520 is connected to one end of the third electrode layer 130 of the plurality of magnetic field enhancement assemblies 10 away from the first electrode layer 110 .

[0095] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0096] The above-described embodiments only express several implementation methods of the present application, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the present application, which all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be based on the attached claims.

Claims

1. A magnetic field enhancement component, characterized in that: include: A first dielectric layer (100), the first dielectric layer (100) comprising a first surface (101) and a second surface (102) opposite to each other; A first electrode layer (110) and a second electrode layer (120) are arranged on the first surface (101) at intervals; A third electrode layer (130) and a fourth electrode layer (140) are arranged at intervals on the second surface (102); an orthographic projection of the first electrode layer (110) on the first dielectric layer (100) partially overlaps with an orthographic projection of the third electrode layer (130) on the first dielectric layer (100); the first electrode layer (110), the first dielectric layer (100) and the third electrode layer (130) form a second structural capacitor (302); an orthographic projection of the second electrode layer (120) on the first dielectric layer (100) partially overlaps with an orthographic projection of the fourth electrode layer (140) on the first dielectric layer (100); the second electrode layer (120), the first dielectric layer (100) and the fourth electrode layer (140) form a third structural capacitor (303); The seventh control circuit (630) comprises: a third capacitor (223), one end of the third capacitor (223) being connected to the first electrode layer (110), and the other end of the third capacitor (223) being connected to the second electrode layer (120); A first inductor (241), one end of the first inductor (241) being connected to the second electrode layer (120); The first switch circuit (631) is connected between the other end of the first inductor (241) and the first electrode layer (110); wherein: The first switch circuit (631) is used to be disconnected in the radio frequency receiving stage, and the second structure capacitor (302) and the third structure capacitor (303) are connected via the third capacitor (223); The first switch circuit (631) is also used to be turned on during the radio frequency transmission phase, and the third capacitor (223) is connected in parallel with the first inductor (241) to put the seventh control circuit (630) in a high impedance state; the second structure capacitor (302) and the third structure capacitor (303) are disconnected.

2. The magnetic field enhancement assembly according to claim 1, characterized in that: The first switch circuit (631) comprises: a third diode (213), wherein an anode of the third diode (213) is connected to the first electrode layer (110), and a cathode of the third diode (213) is connected to the other end of the first inductor (241); A fourth diode (214), wherein an anode of the fourth diode (214) is connected to the other end of the first inductor (241), and a cathode of the fourth diode (214) is connected to the first electrode layer (110).

3. The magnetic field enhancement assembly according to claim 1, characterized in that: The first switch circuit (631) comprises: a fifth enhancement-mode MOS transistor (235), wherein the drain and the gate of the fifth enhancement-mode MOS transistor (235) are respectively connected to an end of the first inductor (241) away from the second electrode layer (120), and the source of the fifth enhancement-mode MOS transistor (235) is connected to the first electrode layer (110); A sixth enhancement mode MOS transistor (236), wherein the drain and the gate of the sixth enhancement mode MOS transistor (236) are respectively connected to the first electrode layer (110), and the source of the sixth enhancement mode MOS transistor (236) is connected to an end of the first inductor (241) away from the second electrode layer (120).

4. The magnetic field enhancement assembly according to claim 1, characterized in that: The first electrode layer (110) further comprises a first sub-electrode layer (111) and a first connecting layer (190); the first sub-electrode layer (111) and the first connecting layer (190) are connected; the first connecting layer (190) is arranged close to the second electrode layer (120); an orthographic projection of the first sub-electrode layer (111) on the first dielectric layer (100) partially overlaps with an orthographic projection of the third electrode layer (130) on the first dielectric layer (100); one end of the third capacitor (223) is connected to an end of the first connecting layer (190) close to the first sub-electrode layer (111); the other end of the third capacitor (223) is connected to the second electrode layer (120); the first switch circuit (631) is connected between an end of the first connecting layer (190) far from the first sub-electrode layer (111) and the second electrode layer (120); and the first connecting layer (190) constitutes the first inductor (241).

5. The magnetic field enhancement assembly according to claim 1, characterized in that: Also includes: a fifth electrode layer (141) disposed on the second surface (102) and between the third electrode layer (130) and the fourth electrode layer (140), wherein the fifth electrode layer (141), the third electrode layer (130) and the fourth electrode layer (140) are spaced apart from each other; The orthographic projection of the fifth electrode layer (141) on the first dielectric layer (100) partially overlaps with the orthographic projection of the first electrode layer (110) on the first dielectric layer (100), and the fifth electrode layer (141), the first dielectric layer (100) and the first electrode layer (110) form a fourth structural capacitor (304); The orthographic projection of the fifth electrode layer (141) on the first dielectric layer (100) partially overlaps with the orthographic projection of the second electrode layer (120) on the first dielectric layer (100); the fifth electrode layer (141), the first dielectric layer (100) and the second electrode layer (120) constitute the third capacitor (223).

6. The magnetic field enhancement assembly according to claim 1, characterized in that: The seventh control circuit (630) further comprises a third inductor (243), wherein the first inductor (241), the first switch circuit (631) and the third inductor (243) are connected in series in sequence, one end of the third inductor (243) is connected to the first electrode layer (110), and the other end of the third inductor (243) is connected to the first switch circuit (631).

7. The magnetic field enhancement assembly according to claim 1, characterized in that: The seventh control circuit (630) further includes a fourth capacitor (224) connected between the third capacitor (223) and the first electrode layer (110).

8. The magnetic field enhancement assembly according to claim 7, characterized in that: The capacitance values ​​of the second structure capacitor (302), the third structure capacitor (303), the third capacitor (223) and the fourth capacitor (224) are equal.

9. A magnetic field enhancement device, characterized in that: include: A cylindrical support structure (50) having two spaced-apart opposite third ends (51) and fourth ends (53); A plurality of magnetic field enhancement components (10) are arranged at intervals on the cylindrical support structure (50), and the plurality of magnetic field enhancement components (10) extend along the third end (51) toward the fourth end (53). The magnetic field enhancement components (10) include: A first dielectric layer (100), the first dielectric layer (100) comprising a first surface (101) and a second surface (102) opposite to each other; A first electrode layer (110) and a second electrode layer (120) are arranged on the first surface (101) at intervals; A third electrode layer (130) and a fourth electrode layer (140) are arranged at intervals on the second surface (102); an orthographic projection of the first electrode layer (110) on the first dielectric layer (100) partially overlaps with an orthographic projection of the third electrode layer (130) on the first dielectric layer (100); the first electrode layer (110), the first dielectric layer (100) and the third electrode layer (130) form a second structural capacitor (302); an orthographic projection of the second electrode layer (120) on the first dielectric layer (100) partially overlaps with an orthographic projection of the fourth electrode layer (140) on the first dielectric layer (100); the second electrode layer (120), the first dielectric layer (100) and the fourth electrode layer (140) form a third structural capacitor (303); The seventh control circuit (630) comprises: a third capacitor (223), one end of the third capacitor (223) being connected to the first electrode layer (110), and the other end of the third capacitor (223) being connected to the second electrode layer (120); A first inductor (241), one end of the first inductor (241) being connected to the second electrode layer (120); The first switch circuit (631) is connected between the other end of the first inductor (241) and the first electrode layer (110); wherein: The first switch circuit (631) is used to be disconnected in the radio frequency receiving stage, and the second structure capacitor (302) and the third structure capacitor (303) are connected via the third capacitor (223); The first switch circuit (631) is also used to be turned on in the radio frequency transmission stage, and the third capacitor (223) is connected in parallel with the first inductor (241) to put the seventh control circuit (630) in a high impedance state; the second structure capacitor (302) and the third structure capacitor (303) are disconnected; a first annular conductive sheet (510) disposed on the cylindrical support structure (50) and close to the third end (51); the first annular conductive sheet (510) is electrically connected to the third electrode layer (130) of the plurality of magnetic field enhancement assemblies (10); and A second annular conductive sheet (520) is disposed on the cylindrical support structure (50) and is close to the fourth end (53); the second annular conductive sheet (520) is electrically connected to the fourth electrode layer (140) of the plurality of magnetic field enhancement components (10).

10. The magnetic field enhancement device according to claim 9, characterized in that: The first annular conductive sheet (510) comprises a control connection port (513), the control connection port (513) comprises a first connection end (511) and a second connection end (512), the first connection end (511) and the second connection end (512) are respectively connected to the third electrode layer (130) of two adjacent magnetic field enhancement components (10), and the seventh control circuit (630) is connected between the first connection end (511) and the second connection end (512).

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