A process method for removing residual contaminants in a process chamber

Abstract

The present invention provides a process method for removing residual contaminants in a process chamber, comprising: an EAP establishing a manufacturing task for a batch of control wafers on a machine; the EAP establishing a current process task for each control wafer on the machine, the machine running a virtual process recipe on the control wafers in the process chamber of the machine according to all current process tasks to remove some residual contaminants in the process chamber, and after the machine completes all current process tasks, the EAP deletes all current process tasks; step S3: the EAP establishing a subsequent process task for each control wafer on the machine, the machine running a virtual process recipe according to all subsequent process tasks to remove some residual contaminants in the process chamber, and after the machine completes all subsequent process tasks, the EAP deletes all subsequent process tasks; step S3 is repeated at least once to remove all residual contaminants in the process chamber of the machine by establishing process tasks four times for a batch of control wafers.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor production, and in particular to a process method for removing residual contaminants in a process chamber. Background Art

[0002] With the continuous advancement of semiconductor process technology, especially at 28nm and above, the control of residual contamination within the tool, such as particulate matter, has become increasingly stringent. However, mechanical movement or wafer transfer inevitably introduces some particles, contaminating the process chamber environment. The cumulative effect can ultimately contaminate subsequent wafers, affecting product yield.

[0003] To overcome the particle contamination problem, we previously developed an auto-season flow, or EAP (Equipment Automation Project). This automatically identifies idle time on a machine and periodically assigns tasks to designated machines. By effectively utilizing this idle time, we can run a specific process recipe for a batch (1-25 wafers) without affecting machine uptime. This recipe is typically a dummy recipe, designed to remove particles or contaminants that have accumulated within the machine.

[0004] However, in actual use, we found that because a batch can only contain a maximum of 25 wafers, a specific process recipe can only be run on a maximum of 25 dummy wafers at a time. Furthermore, the existing EAP settings do not support the reuse of wafers from the same batch in a single manufacturing task (CJ, create job). Therefore, this batch of wafers is not sufficient to remove all particles. Furthermore, based on equipment experience, approximately 100 dummy wafers are required to remove all particles to achieve the desired effect. Furthermore, if the EAP sends multiple auto season flows to the tool within the same time period, the same FOUP (wafer storage box) will be removed from the tool and then returned to the tool multiple times, seriously affecting tool efficiency. Summary of the Invention

[0005] One of the objectives of the present invention is to provide a process method for removing residual contaminants in a process chamber, which can solve the problem that the residual contaminants in the process chamber cannot be completely removed.

[0006] Another object of the present invention is to solve the problem of low machine efficiency caused by EAP sending multiple auto seasonflows to a machine in the same time period.

[0007] In order to solve the above problems, the present invention provides an EAP setting method for removing residual contaminants in a process chamber, comprising the following steps:

[0008] Step S1: The EAP creates a manufacturing task for a batch of control wafers on a machine, wherein a batch of control wafers includes multiple control wafers; and

[0009] Step S2: The EAP creates a current process task for each control wafer on the tool. The tool runs a virtual process recipe on the control wafer in the process chamber of the tool according to all the current process tasks to remove some residual contaminants in the process chamber. After the tool completes all the current process tasks, the EAP deletes all the current process tasks.

[0010] Step S3: The EAP creates a subsequent process task for each control wafer on the tool. The tool runs a virtual process recipe based on all the subsequent process tasks to remove some residual contaminants in the process chamber. After the tool completes all the subsequent process tasks, the EAP deletes all the subsequent process tasks.

[0011] Step S4: cyclically executing step S3 at least once to remove the remaining contaminants in the process chamber.

[0012] Optionally, a batch of control slices includes 25 control slices.

[0013] Optionally, step S2 includes:

[0014] Step S21: The EAP establishes a current process task for each control wafer on the machine;

[0015] Step S22: transferring the 25 control wafers to the process chamber of the machine;

[0016] Step S23: According to all the current process tasks, the machine runs a virtual process recipe to remove some of the residual contaminants in the process chamber;

[0017] Step S24: After the tool completes all the current process tasks, the tool sends information of completing all the current process tasks to the EAP; and

[0018] Step S25: the EAP deletes all the current process tasks.

[0019] Optionally, step S3 includes:

[0020] Step S31: The EAP establishes a first subsequent process task for each control wafer on the machine;

[0021] Step S32: According to all the first and subsequent process tasks, the machine runs a virtual process recipe to remove some residual contaminants in the process chamber;

[0022] Step S33: After the tool completes all the first subsequent process tasks, the tool sends information of completing all the first subsequent process tasks to the EAP; and Step S34: The EAP deletes all the first subsequent process tasks.

[0023] Optionally, step S4 includes:

[0024] Step S3 is performed twice in a cycle to remove the remaining residues in the process chamber.

[0025] Furthermore, step S4 includes:

[0026] Step S41: The EAP creates a second subsequent process task for each control wafer on the tool. The tool runs a virtual process recipe based on all the second subsequent process tasks to remove some of the residual contaminants in the process chamber. After the tool completes all the second subsequent process tasks, the EAP deletes all the second subsequent process tasks.

[0027] Step S42: The EAP creates a third subsequent process task for each of the control wafers on the tool. Based on all the third subsequent process tasks, the tool runs a virtual process recipe to remove the remaining contaminants in the process chamber.

[0028] Furthermore, after step S42, the method further includes:

[0029] The 25 control sheets are transferred out of the process chamber to complete the process of removing residual contaminants in the process chamber.

[0030] Optionally, the virtual process recipes in steps S2, S3 and S4 are all the same.

[0031] Compared with the prior art, the present invention has the following beneficial effects:

[0032] The present invention provides a process method for removing residual contaminants in a process chamber, comprising the following steps: Step S1: an EAP establishes a manufacturing task for a batch of control wafers on a machine, wherein a batch of control wafers includes multiple control wafers; Step S2: the EAP establishes a current process task for each control wafer on the machine, and the machine runs a virtual process recipe on the control wafer located in the process chamber of the machine according to all the current process tasks to remove some residual contaminants in the process chamber, and after the machine completes all the current process tasks, the EAP deletes all the current process tasks; Step S3: the EAP establishes a subsequent process task for each control wafer on the machine, and the machine runs a virtual process recipe according to all the subsequent process tasks to remove some residual contaminants in the process chamber, and after the machine completes all the subsequent process tasks, the EAP deletes all the subsequent process tasks; and Step S4: step S3 is executed in a cycle at least once to remove the remaining residual contaminants in the process chamber. The present invention establishes process tasks four times for a batch of control wafers, so as to remove all residual contaminants in the process chamber of the machine.

[0033] In addition, the present invention transfers a batch of control wafers to the process chamber of the machine after establishing the current process task, and transfers all control wafers out of the process chamber after completing the establishment of the third and subsequent process tasks and running the virtual process recipe (i.e., calling auto season flow once), thereby replacing the multiple calls of auto season flow in the prior art to solve the problem of low machine efficiency caused by the EAP sending multiple auto season flows to the machine within the same time period. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 FIG. 1 is a schematic diagram comparing a process chamber maintenance plan according to an embodiment of the present invention and a process method for removing residual contaminants in a process chamber in the prior art. DETAILED DESCRIPTION

[0035] If the EAP auto season sends an auto season flow to the machine once in the same time period so that 100 pieces of control slices run a specific process recipe, it will be difficult to run continuously without taking advantage of the opportunity. In addition, due to the large number of control slices required, it is difficult to turn over a large number of control slices. If the EAP auto season sends multiple auto season flows to the machine in the same time period so that a single lot of control slices repeatedly run a specific process recipe in the machine, this can be done by loading and unloading a single lot of control slices multiple times. This method requires a lot of OTH (Overhead Hoist Transport, overhead crane system) transfer time, which is too inefficient. Alternatively, a single lot of control slices can be loaded once and divided into multiple process tasks (PJ, process jobs) to run the goods. However, there is the problem of the same control slice being called multiple times in the same CJ but different PJs. This process is difficult to implement.

[0036] Based on the above analysis, the present invention provides a process method for removing residual contaminants in a process chamber, comprising the following steps: Step S1: The EAP establishes a manufacturing task for a batch of control wafers on a machine, wherein a batch of control wafers includes multiple control wafers; Step S2: The EAP establishes a current process task for each of the control wafers on the machine, and the machine runs a virtual process recipe on the control wafers located in the process chamber of the machine according to all the current process tasks to remove some residual contaminants in the process chamber, and after the machine completes all the current process tasks, the EAP deletes all the current process tasks; Step S3: The EAP establishes a subsequent process task for each of the control wafers on the machine, and the machine runs a virtual process recipe according to all the subsequent process tasks to remove some residual contaminants in the process chamber, and after the machine completes all the subsequent process tasks, the EAP deletes all the subsequent process tasks; and Step S4: Step S3 is executed at least once in a cycle to remove the remaining residual contaminants in the process chamber. The present invention establishes process tasks four times for a batch of control wafers, so as to remove all residual contaminants in the process chamber of the machine.

[0037] In addition, the present invention transfers a batch of control wafers to the process chamber of the machine after establishing the current process task, and transfers all control wafers out of the process chamber after completing the establishment of the third and subsequent process tasks and running the virtual process recipe (i.e., calling auto season flow once), thereby replacing the multiple calls of auto season flow in the prior art to solve the problem of low machine efficiency caused by the EAP sending multiple auto season flows to the machine within the same time period.

[0038] The following is a further detailed description of a process method for removing residual contaminants from a process chamber according to the present invention. The present invention will be described in more detail below with reference to the accompanying drawings, which illustrate preferred embodiments of the present invention. It should be understood that those skilled in the art may modify the present invention described herein while still achieving the beneficial effects of the present invention. Therefore, the following description should be understood as a general guideline for those skilled in the art and is not intended to limit the present invention.

[0039] For the sake of clarity, not all features of actual embodiments are described. In the following description, well-known functions and structures are not described in detail because they would obscure the present invention with unnecessary detail. It should be understood that in the development of any actual embodiment, numerous implementation details must be made to achieve the developer's specific goals, such as adapting from one embodiment to another to accommodate system or business constraints. Furthermore, it should be understood that such development work may be complex and time-consuming, but is nevertheless a routine undertaking for those skilled in the art.

[0040] In order to make the purpose and features of the present invention more obvious and easy to understand, the specific embodiments of the present invention are further described below with reference to the accompanying drawings. It should be noted that the drawings are all in a very simplified form and use non-precise ratios, which are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention.

[0041] Since auto season flow is the process of transferring a batch of wafers to the process chamber of the tool and transferring the batch of wafers out of the process chamber of the tool after executing the production process flow, calling auto season flow multiple times is the process of executing the above steps multiple times.

[0042] Figure 1 FIG. 1 is a flow chart of a process method for removing residual contaminants in a process chamber according to this embodiment. Figure 1 As shown, this embodiment provides a process method for removing residual contaminants from a process chamber. This method uses the EAP's auto season feature to send an auto season flow to a tool within a given time period. During this auto season flow, each wafer in a batch of wafers, after entering the process chamber, undergoes multiple cycles of creating a process task and running a virtual process recipe. After all residual contaminants are removed from the process chamber, the wafers are then transferred out of the process chamber. This single auto season flow removes all residual contaminants from the process chamber, saving process time.

[0043] The process method for removing residual contaminants in a process chamber comprises the following steps:

[0044] Step S1: The EAP creates a manufacturing task for a batch of control wafers on a machine, where a batch of control wafers includes multiple control wafers;

[0045] Step S2: The EAP creates a current process task for each control wafer on the tool. The tool runs a virtual process recipe on the control wafer in the process chamber of the tool according to all the current process tasks to remove some residual contaminants in the process chamber. After the tool completes all the current process tasks, the EAP deletes all the current process tasks.

[0046] Step S3: The EAP creates a subsequent process task for each control wafer on the tool. The tool runs a virtual process recipe based on all the subsequent process tasks to remove some residual contaminants in the process chamber. After the tool completes all the subsequent process tasks, the EAP deletes all the subsequent process tasks.

[0047] Step S4: cyclically executing step S3 at least once to remove the remaining contaminants in the process chamber.

[0048] The following is a detailed description of a process method for removing residual contaminants in a process chamber provided by this embodiment.

[0049] First, in step S1, the EAP creates a manufacturing task (CJ) for a batch of control wafers on a machine. A batch of control wafers includes multiple control wafers. Furthermore, a batch of control wafers does not include more than 25 control wafers. In this embodiment, a batch of control wafers includes 25 control wafers.

[0050] In detail, the method for establishing a manufacturing task for a batch of control pieces is as follows:

[0051]

[0052]

[0053] Then, step S2 is executed, wherein the EAP establishes a current process task for each control wafer on the machine. The machine runs a virtual process recipe on the control wafer in the process chamber of the machine according to all the current process tasks to remove some residual contaminants in the process chamber. After the machine completes all the current process tasks, the EAP deletes all the current process tasks.

[0054] This step specifically includes:

[0055] Step S21: The EAP creates a current process task corresponding to each of the control wafers on the machine.

[0056] Taking the example of establishing a current process task for each of the four control slices, the specific method of establishing four current process tasks is as follows:

[0057]

[0058]

[0059] Among them, PJ1, PJ2, PJ3 and PJ4 are the current processes of the four control chips.

[0060] Step S22: The 25 control wafers are transferred to the process chamber of the tool. Specifically, the EAP autoseason sends an auto season flow to the tool, and the OTH transfers the 25 control wafers to the process chamber of the tool.

[0061] Step S23: According to all the current process tasks, the machine runs a virtual process recipe to remove some of the residual contaminants in the process chamber.

[0062] Step S24: After the tool completes all the current process tasks, the tool sends information indicating that all the current process tasks have been completed to the EAP.

[0063] Step S25: the EAP deletes all the current process tasks, and after this step is completed, all the control wafers remain in the process chamber.

[0064] Then, step S3 is executed, wherein the EAP creates a subsequent process task for each of the control wafers on the machine. The machine runs a virtual process recipe based on all the subsequent process tasks to remove some of the residual contaminants in the process chamber. After the machine completes all the subsequent process tasks, the EAP deletes all the subsequent process tasks.

[0065] This step specifically includes:

[0066] Step S31: The EAP establishes a first subsequent process task for each control wafer on the machine. Specifically, based on the method for establishing the current task in step S21, the EAP establishes a first subsequent process task for each control wafer on the machine. In this embodiment, establishing all first subsequent process tasks takes only seconds, which is essentially negligible compared to the time required to run the virtual process recipe.

[0067] Step S32: According to all the first and subsequent process tasks, the machine runs a virtual process recipe to remove some of the residual contaminants in the process chamber.

[0068] Step S33: After the tool completes all the first and subsequent process tasks, the tool sends information indicating that all the first and subsequent process tasks have been completed to the EAP.

[0069] Step S34: the EAP deletes all the first and subsequent process tasks.

[0070] Then, step S4 is performed, and step S3 is performed at least twice in a cycle to remove the remaining residues in the process chamber.

[0071] Since it is predicted that the virtual process recipe needs to be run on 100 control wafers to remove all particles, and in this embodiment, a batch of only 25 control wafers, the virtual process recipe needs to be run four times on the same batch of control wafers. This means that in this embodiment, step S3 needs to be executed twice to remove the remaining contaminants in the process chamber, and the same virtual process recipe needs to be run four times.

[0072] This step specifically includes:

[0073] Step S41: The EAP creates a corresponding second subsequent process task for each control wafer on the tool. The tool runs a virtual process recipe based on all the second subsequent process tasks to remove some residual contaminants in the process chamber. After the tool completes all the second subsequent process tasks, the EAP deletes all the second subsequent process tasks.

[0074] Step S42: The EAP creates a third subsequent process task for each of the control wafers on the tool. Based on all the third subsequent process tasks, the tool runs a virtual process recipe to remove some residual contaminants in the process chamber.

[0075] After step S42, the method further includes:

[0076] The 25 control sheets are transferred out of the process chamber to complete the process of removing residual contaminants in the process chamber and also complete an auto season flow.

[0077] Taking the maintenance of CDSEM process chambers as an example, in the prior art, before production capacity increased, the maintenance frequency of CDSEM process chambers was once every six months, that is, twice a year. Due to the increase in production capacity, the maintenance time of CDSEM process chambers was changed to once a quarter, that is, four times a year, and each maintenance of the CDSEM process chamber required 30 hours. After the process method for removing residual contaminants in the process chamber was implemented, the maintenance time of the CDSEM process chamber was reduced and restored to once every six months. Therefore, the maintenance time saved for each machine = 30 hours / time * 2 times / year * 12 months ÷ 8640 hours / year = 0.7% / machine / month (i.e., each machine per month). Therefore, the process method for removing residual contaminants in the process chamber provided in this embodiment achieves the effect of multiple dummy runs through one auto season flow, thereby improving the utilization efficiency of the machine.

[0078] In summary, this embodiment provides a process method for removing residual contaminants from a process chamber, achieving the effect of multiple dummy runs through one auto season flow, optimizing the EAP settings, and enabling EAP to call a batch of control wafers in the same silicon wafer storage box. The control wafers of the same batch can be reused without the need for a large number of control wafers or multiple calls to auto season flow, thereby significantly improving the utilization efficiency of the machine.

[0079] In addition, it should be noted that, unless otherwise specified or indicated, the terms "first", "second", etc. in the specification are only used to distinguish the various components, elements, steps, etc. in the specification, and are not used to indicate the logical relationship or sequential relationship between the various components, elements, steps, etc.

[0080] It is understood that although the present invention has been disclosed above with reference to preferred embodiments, the above embodiments are not intended to limit the present invention. For any person skilled in the art, without departing from the scope of the technical solution of the present invention, the technical content disclosed above can be used to make many possible changes and modifications to the technical solution of the present invention, or to modify it into an equivalent embodiment with equivalent changes. Therefore, any simple modification, equivalent change, and modification made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention still fall within the scope of protection of the technical solution of the present invention.

Claims

1. A process method for removing residual contaminants in a process chamber, characterized in that: The following steps are involved: Step S1: The EAP creates a manufacturing task for a batch of control wafers on a machine, where a batch of control wafers includes multiple control wafers; Step S2: The EAP creates a current process task for each control wafer on the tool. The tool runs a virtual process recipe on the control wafer in the process chamber of the tool according to all the current process tasks to remove some residual contaminants in the process chamber. After the tool completes all the current process tasks, the EAP deletes all the current process tasks. The control wafer remains in the process chamber after completing the current process tasks. Step S3: The EAP creates a subsequent process task for each control wafer on the tool. The tool runs a virtual process recipe based on all the subsequent process tasks to remove some residual contaminants in the process chamber. After the tool completes all the subsequent process tasks, the EAP deletes all the subsequent process tasks. Step S4: cyclically executing step S3 at least once to remove the remaining contaminants in the process chamber without removing the control wafer from the process chamber.

2. The process method for removing residual contaminants in a process chamber according to claim 1, wherein: A batch of control pieces includes 25 control pieces.

3. The process method for removing residual contaminants in a process chamber according to claim 1, wherein: Step S2 includes: Step S21: The EAP establishes a current process task for each control wafer on the machine; Step S22: transferring the 25 control wafers to the process chamber of the machine; Step S23: According to all the current process tasks, the machine runs a virtual process recipe to remove some of the residual contaminants in the process chamber; Step S24: After the tool completes all the current process tasks, the tool sends information of completing all the current process tasks to the EAP; and Step S25: the EAP deletes all the current process tasks.

4. The process method for removing residual contaminants in a process chamber according to claim 1, wherein: Step S3 includes: Step S31: The EAP establishes a first subsequent process task for each control wafer on the machine; Step S32: According to all the first and subsequent process tasks, the machine runs a virtual process recipe to remove some residual contaminants in the process chamber; Step S33: After the tool completes all the first and subsequent process tasks, the tool sends information of completing all the first and subsequent process tasks to the EAP; and Step S34: the EAP deletes all the first and subsequent process tasks.

5. The process method for removing residual contaminants in a process chamber according to claim 1, wherein: Step S4 includes: Step S3 is performed twice in a cycle to remove the remaining residues in the process chamber.

6. The process method for removing residual contaminants in a process chamber according to claim 5, wherein: Step S4 includes: Step S41: The EAP creates a second subsequent process task for each control wafer on the tool. The tool runs a virtual process recipe based on all the second subsequent process tasks to remove some of the residual contaminants in the process chamber. After the tool completes all the second subsequent process tasks, the EAP deletes all the second subsequent process tasks. Step S42: The EAP creates a third subsequent process task for each of the control wafers on the tool. Based on all the third subsequent process tasks, the tool runs a virtual process recipe to remove the remaining contaminants in the process chamber.

7. The process method for removing residual contaminants in a process chamber according to claim 6, wherein: After step S42, the method further includes: The 25 control sheets are transferred out of the process chamber to complete the process of removing residual contaminants in the process chamber.

8. The process method for removing residual contaminants in a process chamber according to claim 1, wherein: The virtual process recipes in steps S2, S3 and S4 are all the same.

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