Actively addressed micro LED cell structure, preparation method thereof and micro LED device

Abstract

The present invention discloses an actively addressed micro LED cell structure, which includes: a CMOS wafer substrate, an anode via hole provided in the CMOS wafer substrate, a two-color light-emitting unit or a three-color light-emitting unit formed on the anode via hole, and the height of the light-emitting unit increases or decreases in sequence; the light-emitting unit is composed of a CMOS driving circuit layer and a light-emitting layer provided on the CMOS driving circuit layer, and a common cathode is provided on each light-emitting layer. Anodes of different heights are used for monolithic integration in batches to form R, G, and B sub-pixels of different heights to complete color display.

Description

Technical Field

[0001] This invention belongs to the field of Micro OLED technology, and more specifically, this invention relates to an active addressable microLED cell structure, its fabrication method, and a microLED device. Background Technology

[0002] Micro LED is a next-generation display technology with self-emissive display characteristics. Compared to existing organic light-emitting diode (OLED) technology, MicroLED display devices offer a series of advantages, including higher brightness and stability, better luminous efficiency, lower power consumption, and faster response time. The display principle of Micro LED devices involves thinning, miniaturizing, and arraying the LED structure to a size of only about 1 to 10 μm; then, the display is formed through monolithic integration or mass transfer methods.

[0003] Currently, most monochrome devices are formed through mass transfer schemes. However, the transfer efficiency and yield of existing mass transfer schemes do not meet mass production standards. To achieve full-color display, three mass transfers or two transfers (R, G; R, B; G, B) are required to form a color display, which further increases the technical difficulty. In addition, there are also technical issues related to high manufacturing costs. Summary of the Invention

[0004] This invention provides an actively addressed micro LED cell structure, aiming to improve the above-mentioned problems.

[0005] This invention is implemented as follows: an actively addressed micro LED cell structure, wherein the cell structure comprises:

[0006] A CMOS wafer substrate, an anode via is provided in the CMOS wafer substrate, and two-color light-emitting units or three-color light-emitting units are formed on the anode via, with the height of the light-emitting units increasing or decreasing sequentially;

[0007] The light-emitting unit consists of a CMOS driving circuit layer and a light-emitting layer disposed on the CMOS driving circuit layer, with a common cathode disposed on each light-emitting layer.

[0008] Furthermore, the feature is that the three light-emitting units are sequentially a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit, wherein,

[0009] The first light-emitting unit consists of a first CMOS driving circuit layer, a first anode, and a first light-emitting layer from bottom to top;

[0010] The second light-emitting unit consists of, from bottom to top, a first CMOS driving circuit layer, a first anode, a second CMOS driving circuit layer, a second anode, and a second light-emitting layer;

[0011] The third light-emitting unit consists of, from bottom to top, a first CMOS driving circuit layer, a first anode, a second CMOS driving circuit layer, a second anode, a third CMOS driving circuit layer, a third anode, and a third light-emitting layer.

[0012] Furthermore, the two light-emitting units are, in sequence, a first light-emitting unit and a second light-emitting unit, wherein,

[0013] The first light-emitting unit consists of a first CMOS driving circuit layer, a first anode, and a first light-emitting layer from bottom to top; the second light-emitting unit consists of a first CMOS driving circuit layer, a first anode, a second CMOS driving circuit layer, a second anode, and a second light-emitting layer from bottom to top.

[0014] Furthermore, the cellular structure also includes:

[0015] A high-temperature filling layer is set between adjacent light-emitting units.

[0016] Furthermore, the cellular structure also includes:

[0017] The passivation repair layer is located on the sidewall of the two light-emitting units connected by the high-temperature filling layer and the high-temperature filling layer, below the common cathode.

[0018] Furthermore, the light-emitting layer consists of a P-type layer, an MQW layer, and an N-type layer from bottom to top.

[0019] This invention is implemented as follows: an actively addressed micro LED device, the device comprising:

[0020] Several active-addressable micro LED cell structures have an encapsulation filling layer and a protective layer sequentially disposed on the common cathode of all micro LED cell structures.

[0021] This invention is achieved by providing a method for fabricating an actively addressed micro LED cell structure, the method specifically comprising the following steps:

[0022] S11. Deposit a first CMOS driving circuit layer on the surface of the CMOS driving backplane, and deposit an anode on the epitaxial wafers of three light-emitting LEDs. The epitaxial wafers of the light-emitting LEDs are composed of a substrate and a light-emitting layer in sequence.

[0023] S12. Bond the first CMOS driving circuit layer on the surface of the CMOS driving backplane to the first anode of the first light-emitting LED epitaxial wafer. Figure 5This is a schematic diagram of the structure after the CMOS driver backplane and the epitaxial wafer of the first light-emitting LED are bonded together.

[0024] S13. Remove the functional substrate layer on the epitaxial wafer of the first light-emitting LED, and remove the first light-emitting layer on the second growth region and the third growth region;

[0025] S14. Grow a second CMOS driving circuit layer on the second growth region and the third growth region, and then bond the second anode on the epitaxial wafer of the second light-emitting LED to the second CMOS driving circuit layer.

[0026] S15. Remove the functional substrate on the epitaxial wafer of the second light-emitting LED, remove the second light-emitting layer in the first growth region and the third growth region, and remove the second anode in the first growth region;

[0027] S16. Grow a third CMOS driving circuit layer in the third growth region, and then bond the third anode on the third light-emitting LED epitaxial wafer to the third CMOS driving circuit layer.

[0028] S17. Remove the functional substrate on the epitaxial wafer of the third light-emitting LED, and remove the third light-emitting layer and the third anode in the first growth region and the second growth region;

[0029] S18. A common cathode is prepared on the first light-emitting layer, the second light-emitting layer and the third light-emitting layer.

[0030] Furthermore, the process after step S17 and before step S18 also includes:

[0031] S1. Etch the connection between the two growth regions until a gap is formed in the CMOS driving backplane. Fill the gap with a high-temperature filler to form a high-temperature filling layer between the light-emitting units.

[0032] S2. A passivation repair layer is formed on the sidewalls of the two light-emitting units connected by the high-temperature filling layer and the high-temperature filling layer. After the passivation repair layer is formed, a common cathode is formed on the light-emitting layer.

[0033] This invention is achieved by providing a method for fabricating an actively addressed micro LED cell structure, the specific fabrication method of which is as follows:

[0034] S21. Deposit a first CMOS driving circuit layer on the surface of the CMOS driving backplane, and deposit an anode on the epitaxial wafers of two light-emitting LEDs. The epitaxial wafers of the light-emitting LEDs are composed of a substrate and a light-emitting layer in sequence.

[0035] S22. Bond the first CMOS driving circuit layer on the surface of the CMOS driving backplane to the first anode of the first light-emitting LED epitaxial wafer;

[0036] S23. Remove the functional substrate layer (first functional substrate) on the epitaxial wafer of the first light-emitting LED, and remove the first light-emitting layer in the second growth region;

[0037] S24. Grow a second CMOS driving circuit layer in the second growth region, and then bond the second anode on the epitaxial wafer of the second light-emitting LED to the second CMOS driving circuit layer.

[0038] S25. Remove the functional substrate on the epitaxial wafer of the second light-emitting LED, and remove the second light-emitting layer and the second anode in the first growth region;

[0039] S26. A common cathode is prepared on the first light-emitting layer and the second light-emitting layer.

[0040] The active addressable micro LED cell structure provided by this invention has the following beneficial technical effects:

[0041] (1) Anodes of different heights are used to integrate single chips in batches to form R, G, and B sub-pixels of different heights to complete color display;

[0042] (2) The proposed micro LED device structure is entirely made using semiconductor processes; at the same time, due to the use of vertical structure chips, the anode part is located at the bottom of the device, avoiding the shading of the electrode part, thereby improving the pixel density of the display device. Attached Figure Description

[0043] Figure 1 This is a schematic diagram of a CMOS driving backplane after the deposition of the CMOS driving circuit layer, provided in an embodiment of the present invention.

[0044] Figure 2 This is a schematic diagram of the LED epitaxial wafer after anode deposition, provided in an embodiment of the present invention.

[0045] Figure 3 Provided for embodiments of the present invention Figure 1 The CMOS driver backplane shown is Figure 2 The diagram shows the structure of the LED epitaxial wafer after bonding.

[0046] Figure 4 This is a schematic diagram of the structure of the LED epitaxial wafer with the functional substrate removed, provided in an embodiment of the present invention.

[0047] Figure 5 This is a schematic diagram of the structure after integrating three light-emitting units according to an embodiment of the present invention;

[0048] Figure 6 This is a schematic diagram of the structure after surface passivation repair provided in an embodiment of the present invention;

[0049] Figure 7This is a schematic diagram of the structure after the common cathode is completed, provided in an embodiment of the present invention;

[0050] Figure 8 This is a schematic diagram of the structure after encapsulation and filling provided in an embodiment of the present invention;

[0051] Figure 9 Provided for embodiments of the present invention Figure 8 Enlarged view of a portion of area A in the middle;

[0052] Figure 10 Provided for embodiments of the present invention Figure 9 Enlarged view of a section in area B;

[0053] 1. CMOS wafer substrate; 2. Anode via; 3. CMOS driver circuit layer; 31. First CMOS driver circuit layer; 32. Second CMOS driver circuit layer; 33. Third CMOS driver circuit layer; 4. High-temperature filling layer; 5. Passivation repair layer; 6. Common cathode; 7. Encapsulation filling layer; 8. Protective layer; a. Functional substrate; b. Light-emitting layer; b1. P-type layer; b2. MQW layer; b3. N-type layer; c. Anode; c1. First anode; c2. Second anode; c3. Third anode. Detailed Implementation

[0054] The specific embodiments of the present invention will be further described in detail below with reference to the accompanying drawings, so as to help those skilled in the art to have a more complete, accurate and in-depth understanding of the inventive concept and technical solution of the present invention.

[0055] Figure 7 This is a schematic diagram of an actively addressed micro LED cell structure provided in an embodiment of the present invention. For ease of explanation, only the parts related to the embodiment of the present invention are shown.

[0056] The cellular structure includes:

[0057] A CMOS wafer substrate with an anode via formed therein, and two-color or three-color light-emitting units formed on the anode via, with the height of the light-emitting units increasing or decreasing. The light-emitting unit consists of a CMOS driving circuit layer and a light-emitting layer on the CMOS driving circuit layer, with a common cathode on each light-emitting layer.

[0058] The three-color light-emitting unit mentioned in this invention refers to a red light-emitting unit, a green light-emitting unit, and a blue light-emitting unit, while the two-color light-emitting unit refers to two of the three-color light-emitting units.

[0059] Anode vias provide current drive signals to the CMOS driver circuit layer. The CMOS driver circuit layer then provides drive current to the light-emitting layer based on these signals. Each light-emitting unit corresponds to one anode via, enabling independent control of each unit. For example, to achieve full-color display, red, green, and blue light-emitting units are driven simultaneously. The common cathode uses conductive transparent materials, such as metal oxides like ITO and IZO, or metals like Al and Ag. Alternatively, a multilayer structure composed of these materials can be used. A drive current is provided between the common cathode and the anode to make the light-emitting units emit light.

[0060] In another embodiment of the present invention, if the cell structure includes three light-emitting units, namely a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit, then the first light-emitting unit is composed of a first CMOS driving circuit layer, a first anode, and a first light-emitting layer from bottom to top; the second light-emitting unit is composed of a first CMOS driving circuit layer, a first anode, a second CMOS driving circuit layer, a second anode, and a second light-emitting layer from bottom to top; and the third light-emitting unit is composed of a first CMOS driving circuit layer, a first anode, a second CMOS driving circuit layer, a second anode, a third CMOS driving circuit layer, a third anode, and a third light-emitting layer from bottom to top. Figure 9 As shown.

[0061] If the cell structure includes two light-emitting units, namely the first light-emitting unit and the second light-emitting unit, the first light-emitting unit is composed of a first CMOS driving current layer, a first anode and a first light-emitting layer from bottom to top; the second light-emitting unit is composed of a first CMOS driving circuit layer, a first anode, a second CMOS driving circuit layer, a second anode and a second light-emitting layer from bottom to top.

[0062] In this embodiment of the invention, the cell structure further includes:

[0063] A high-temperature filling layer is set between adjacent light-emitting units. The material of the high-temperature filling layer can be organic materials such as polyimide (PI), polydimethylsiloxane (PDMS), photoresist, etc., or inorganic materials such as SiO, SiN, AlO, etc. It is used to connect the light-emitting layers of two adjacent light-emitting units, so that the surfaces of the two light-emitting layers can be smoothly transitioned, which is convenient for subsequent processes. In addition, the presence of the high-temperature filling layer also makes the cell structure more stable and increases the mechanical strength of the cell structure.

[0064] In another embodiment of the present invention, the cell structure further includes:

[0065] The passivation repair layer is located on the sidewalls of the two light-emitting units connected by the high-temperature filling layer. The passivation repair layer can prevent leakage caused by foreign objects on the sidewalls of the light-emitting layer. At the same time, it can also repair the damage to the light-emitting layer caused by the dry etching process. It should be noted that the passivation repair layer can cover the edge of the upper surface of the light-emitting layer to prevent the sidewalls of the light-emitting layer from not being completely covered during the production process, which would affect the function of the passivation repair layer. The material of the passivation repair layer is SiO2 or Ti2O3.

[0066] In this embodiment of the invention, the light-emitting layer is composed of a P-type layer, an MQW layer, and an N-type layer from bottom to top, as follows: Figure 10 As shown.

[0067] The present invention also provides an active-addressable micro LED device, the device comprising:

[0068] Several actively addressed micro LED cell structures have an encapsulation filling layer and a protective layer sequentially disposed on the common cathode of all micro LED cell structures. This is primarily to prevent optical crosstalk. An encapsulation filling material is poured into the surface of the common cathode and planarized. The encapsulation filling material can be organic materials such as high-temperature resin or high-temperature photoresist. Then, a protective layer (such as a cover glass) is placed, and the entire device is protected by the cover glass. Figure 8 As shown.

[0069] The method for fabricating an actively addressed micro LED cell structure provided in this embodiment of the invention specifically includes the following steps:

[0070] S11. Deposit a first CMOS driving circuit layer on the surface of the CMOS driving backplane, and deposit an anode on the epitaxial wafers of three light-emitting LEDs. The epitaxial wafers of the light-emitting LEDs are composed of a substrate and a light-emitting layer in sequence.

[0071] Figure 1 This is a schematic diagram of a CMOS driving backplane after the deposition of a CMOS driving circuit layer. The CMOS driving backplane includes a CMOS wafer substrate and an anode via disposed in the CMOS wafer substrate. Here, 1 represents the CMOS wafer substrate, 2 represents the anode via, and 3 represents the first CMOS driving circuit layer. The anode via 2 is usually a tungsten via. A stack of Cr / Pt / Au (20nm / 50nm / 1000nm) is deposited on the CMOS wafer substrate to form the first CMOS driving circuit layer. The stacked structure of the second and third CMOS driving circuit layers in this invention is the same as that of the first CMOS driving circuit layer.

[0072] Figure 2This is a schematic diagram of an LED epitaxial wafer after anode deposition. The LED epitaxial wafer consists of a functional substrate, a light-emitting layer, and an anode. The three LED epitaxial wafers are the first, second, and third LED epitaxial wafers, corresponding to three colors: red, blue, and green. The functional layers in the different colored LED epitaxial wafers emit different colors of light. Here, a is the functional substrate, b is the light-emitting layer, and c is the anode. The first LED epitaxial wafer consists of a first functional substrate, a first light-emitting layer, and a first anode. The second LED epitaxial wafer consists of a second functional substrate, a second light-emitting layer, and a second anode. The third LED epitaxial wafer consists of a third functional substrate, a third light-emitting layer, and a third anode. ITO / Cr / Al / Pt / Au (50nm / 20nm / 200nm / 50nm / 1000nm) are stacked and deposited on the light-emitting layers of the three LED epitaxial wafers to form the first anode c1, the second anode c2 and the third anode c3.

[0073] S12. Bond the first CMOS driving circuit layer on the surface of the CMOS driving backplane to the first anode of the first light-emitting LED epitaxial wafer. Figure 3 This is a schematic diagram of the structure after the CMOS driver backplane and the epitaxial wafer of the first light-emitting LED are bonded together.

[0074] S13. Remove the functional substrate layer (first functional substrate, such as...) from the epitaxial wafer of the first light-emitting LED. Figure 4 (As shown), remove the first luminescent layer on the second and third growth regions;

[0075] The first growth region, the second growth region, and the third growth region are used to grow three light-emitting units. Photolithography is performed on the first light-emitting layer in the first growth region, and the first light-emitting layer outside the first growth region is etched away to form a pixel pattern.

[0076] S14. Grow a second CMOS driving circuit layer on the second growth region and the third growth region, and then bond the second anode on the epitaxial wafer of the second light-emitting LED to the second CMOS driving circuit layer.

[0077] In order to bond the second anode on the second LED epitaxial wafer to the second CMOS driving circuit layer, the thickness of the fabricated second CMOS driving circuit layer is greater than that of the first light-emitting layer.

[0078] S15. Remove the functional substrate on the epitaxial wafer of the second light-emitting LED, remove the second light-emitting layer in the first growth region and the third growth region, and remove the second anode in the first growth region;

[0079] Photolithography is performed on the second light-emitting layer within the second growth region, and the second light-emitting layer outside the second growth region is etched away to form a pixel pattern;

[0080] S16. Grow a third CMOS driving circuit layer in the third growth region, and then bond the third anode on the third light-emitting LED epitaxial wafer to the third CMOS driving circuit layer.

[0081] In order to bond the third anode on the third LED epitaxial wafer to the third CMOS driving circuit layer, the thickness of the fabricated third CMOS driving circuit layer is higher than that of the second light-emitting layer.

[0082] S17. Remove the functional substrate on the epitaxial wafer of the third LED, and remove the third light-emitting layer and the third anode in the first and second growth regions, as follows: Figure 5 As shown;

[0083] Photolithography is performed on the third light-emitting layer within the third growth region, and the third light-emitting layer outside the third growth region is etched away to form a pixel pattern.

[0084] S18. A common cathode is fabricated on the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer, such as... Figure 7 As shown, the fabrication of the micro LED cell structure with three light-emitting units has been completed.

[0085] In this embodiment of the invention, if the light emitted by two light-emitting units (red light and blue light, red light and green light, green light and blue light) is combined, then the specific preparation method is as follows:

[0086] S21. Deposit a first CMOS driving circuit layer on the surface of the CMOS driving backplane, and deposit an anode on the epitaxial wafers of two light-emitting LEDs. The epitaxial wafers of the light-emitting LEDs are composed of a substrate and a light-emitting layer in sequence.

[0087] S22. Bond the first CMOS driving circuit layer on the surface of the CMOS driving backplane to the first anode of the first light-emitting LED epitaxial wafer;

[0088] S23. Remove the functional substrate layer (first functional substrate) on the epitaxial wafer of the first light-emitting LED, and remove the first light-emitting layer in the second growth region;

[0089] Two light-emitting units are grown in the first growth region and the second growth region. The first light-emitting layer outside the first growth region is etched away to form a pixel pattern.

[0090] S24. Grow a second CMOS driving circuit layer in the second growth region, and then bond the second anode on the epitaxial wafer of the second light-emitting LED to the second CMOS driving circuit layer.

[0091] In order to bond the second anode on the second LED epitaxial wafer to the second CMOS driving circuit layer, the thickness of the fabricated second CMOS driving circuit layer is greater than that of the first LED.

[0092] S25. Remove the functional substrate on the epitaxial wafer of the second light-emitting LED, and remove the second light-emitting layer and the second anode in the first growth region;

[0093] Photolithography is performed on the second light-emitting layer within the second growth region, and the second light-emitting layer outside the second growth region is etched away to form a pixel pattern;

[0094] S26. A common cathode is fabricated on the first and second light-emitting layers, thus completing the fabrication of the microLED cell structure of the two light-emitting units.

[0095] In this embodiment of the invention, the two light-emitting unit micro LED cell structures and the two light-emitting unit micro LED cell structures are identical in subsequent fabrication processes; the process further includes the following steps after step S25 and before step S26 or after step S17 and before step S18:

[0096] S1. Etch the connection between the two growth regions until a gap is formed in the CMOS driver backplane. Fill the gap with a high-temperature filler to form a high-temperature filling layer between the light-emitting units. The gap can be filled with the high-temperature filler by inkjet printing.

[0097] In this embodiment of the invention, the step S1 is followed by:

[0098] S2. A passivation repair layer is formed on the sidewalls of the two light-emitting units connected by the high-temperature filling layer, such as... Figure 6 As shown, a common cathode is formed on the light-emitting layer after the passivation repair layer is formed.

[0099] The present invention has been described by way of example. Obviously, the specific implementation of the present invention is not limited to the above-described manner. Any non-substantial improvements made using the inventive concept and technical solution of the present invention, or the direct application of the inventive concept and technical solution of the present invention to other occasions without modification, are all within the protection scope of the present invention.

Claims

1. A method for preparing an actively addressed micro LED cell structure, characterized in that: The actively addressed microLED cell structure includes: A CMOS wafer substrate, an anode via hole provided in the CMOS wafer substrate, forming a two-color light-emitting unit or a three-color light-emitting unit on the anode via hole, and the light-emitting units of different colors have different heights; The light-emitting unit is composed of a CMOS driving circuit layer and a light-emitting layer arranged on the CMOS driving circuit layer, and a common cathode is arranged on each light-emitting layer; The method for preparing the actively addressed micro LED cell structure comprises the following steps: S11, depositing a first CMOS driving circuit layer on the surface of the CMOS driving backplane, and depositing anodes on three light-emitting LED epitaxial wafers, wherein the light-emitting LED epitaxial wafers are sequentially composed of a substrate and a light-emitting layer; S12, bonding the first CMOS driving circuit layer on the surface of the CMOS driving backplane to the first anode of the first light-emitting LED epitaxial wafer; S13, removing the functional substrate layer on the first light-emitting LED epitaxial wafer, and removing the first light-emitting layer on the second growth region and the third growth region; S14, growing a second CMOS driving circuit layer on the second growth region and the third growth region, and then bonding the second anode on the second light-emitting LED epitaxial wafer to the second CMOS driving circuit layer; S15, removing the functional substrate on the second light-emitting LED epitaxial wafer, removing the second light-emitting layer in the first growth region and the third growth region, and removing the second anode in the first growth region; S16, growing a third CMOS driving circuit layer in the third growth region, and then bonding the third anode on the third light-emitting LED epitaxial wafer to the third CMOS driving circuit layer; S17, removing the functional substrate on the third light-emitting LED epitaxial wafer, and removing the third light-emitting layer and the third anode in the first growth region and the second growth region; S18, preparing a common cathode on the first light-emitting layer, the second light-emitting layer and the third light-emitting layer; Or it could be; The method for preparing the actively addressed micro LED cell structure comprises the following steps: S21, depositing a first CMOS driving circuit layer on the surface of the CMOS driving backplane, and depositing anodes on two light-emitting LED epitaxial wafers, wherein the light-emitting LED epitaxial wafers are sequentially composed of a substrate and a light-emitting layer; S22, bonding the first CMOS driving circuit layer on the surface of the CMOS driving backplane to the first anode of the first light-emitting LED epitaxial wafer; S23, removing the functional substrate layer on the first light-emitting LED epitaxial wafer, and removing the first light-emitting layer in the second growth region; S24, growing a second CMOS driving circuit layer in the second growth region, and then bonding the second anode on the second light-emitting LED epitaxial wafer to the second CMOS driving circuit layer; S25, removing the functional substrate on the second light-emitting LED epitaxial wafer, and removing the second light-emitting layer and the second anode in the first growth region; S26, preparing a common cathode on the first light-emitting layer and the second light-emitting layer.

2. The method for preparing the actively addressed micro LED cell structure according to claim 1, wherein: The three light-emitting units are the first light-emitting unit, the second light-emitting unit and the third light-emitting unit, wherein: The first light-emitting unit is composed of a first CMOS driving circuit layer, a first anode and a first light-emitting layer from bottom to top; The second light-emitting unit is composed of a first CMOS driving circuit layer, a first anode, a second CMOS driving circuit layer, a second anode and a second light-emitting layer in sequence from bottom to top; The third light-emitting unit is composed of a first CMOS driving circuit layer, a first anode, a second CMOS driving circuit layer, a second anode, a third CMOS driving circuit layer, a third anode and a third light-emitting layer in sequence from bottom to top.

3. The method for preparing the actively addressed micro LED cell structure according to claim 1, wherein: The two light-emitting units are the first light-emitting unit and the second light-emitting unit, wherein: The first light-emitting unit is composed of a first CMOS driving circuit layer, a first anode and a first light-emitting layer from bottom to top; the second light-emitting unit is composed of a first CMOS driving circuit layer, a first anode, a second CMOS driving circuit layer, a second anode and a second light-emitting layer from bottom to top.

4. The method for preparing the actively addressed micro LED cell structure according to claim 1, wherein: The cellular structure also includes: A high-temperature filling layer is provided between adjacent light-emitting units.

5. The method for preparing the actively addressed micro LED cell structure according to claim 1, wherein: The cellular structure also includes: The passivation repair layer is arranged on the high-temperature filling layer and the side walls of the two light-emitting units connected to the high-temperature filling layer, and is located below the common cathode.

6. The method for preparing the actively addressed micro LED cell structure according to claim 1, wherein: The light-emitting layer is composed of a P-type layer, an MQW layer and an N-type layer from bottom to top.

7. An actively addressed micro LED device, characterized in that: The device comprises: According to the method for preparing an actively addressed micro LED cell structure according to any one of claims 1 to 6, a packaging filling layer and a protective layer are sequentially arranged on the common cathode of all micro LED cell structures.

8. The method for preparing the actively addressed micro LED cell structure according to claim 1, wherein: After step S17 and before step S18, the following steps are also included: S1, etching the connection between the two growth regions until a gap is formed on the CMOS driving backplane, and filling the gap with a high-temperature filler to form a high-temperature filling layer between the light-emitting units; S2. Form a passivation repair layer on the high-temperature filling layer and the side walls of the two light-emitting units connected to the high-temperature filling layer, and then form a common cathode on the light-emitting layer after forming the passivation repair layer.

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