laser

By alternately arranging the first and second-class light emitting chips and using the target adapter table for electrical connection, the problem of large volume of multi-color lasers is solved, miniaturization of the laser and uniformity of laser distribution are achieved, and the display effect of the projection equipment is improved.

CN115000798BActive Publication Date: 2025-08-15QINGDAO HISENSE LASER DISPLAY CO LTD
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Patent Information

Application Number
CN202210557927.X
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-05-19
Publication Date
2025-08-15
Estimated Expiration
2042-05-19

AI Technical Summary

Technical Problem

Multicolor lasers are large in size, making it more difficult to achieve miniaturization.

Method used

The first and second type of light emitting chips are arranged alternately in one row, and the target adapter stage is used to realize the electrical connection of each light emitting chip, and different types of light emitting chips are connected through an insulated conductive part to avoid series current damage.

Benefits of technology

The laser is miniaturized, and the distribution uniformity of lasers of different colors is improved, and the display effect of projection equipment is improved.

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Abstract

The present application discloses a laser, which belongs to the field of optoelectronic technology. In the laser, the first type of light-emitting chip and the second type of light-emitting chip are used to emit lasers of different colors respectively, and multiple first type of light-emitting chips and multiple second type of light-emitting chips are alternately arranged to form a row of light-emitting chips; multiple target adapters are located on one side of the row of light-emitting chips in the column direction; in the row direction of the row of light-emitting chips, each target adapter is located between adjacent first type of light-emitting chips and second type of light-emitting chips; each target adapter includes two mutually insulated conductive parts; two first type of light-emitting chips located on both sides of the target adapter and closest to each other are electrically connected through any one of the two conductive parts; two second type of light-emitting chips located on both sides of the target adapter and closest to each other are electrically connected through the other of the two conductive parts. The present application solves the problem of large volume of multi-color lasers. The present application is used for emitting light.
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Description

Technical Field

[0001] The present application relates to the field of optoelectronic technology, and in particular to a laser. Background Art

[0002] With the development of optoelectronic technology, lasers are widely used, and multi-color lasers (such as three-color lasers) are favored due to their strong color expression.

[0003] Figure 1 This is a schematic diagram of the structure of a laser provided by the relevant technology. Figure 1 As shown, the laser 00 includes: a base plate 001, a tubular side wall 002, a plurality of conductive pins 003 and a plurality of light-emitting chips 004. The side wall 002 and the light-emitting chips 004 are fixed on the base plate 001, and the side wall 002 surrounds the plurality of light-emitting chips 004. The plurality of light-emitting chips 004 are arranged in multiple rows, and the light-emitting chips 004 in the same row are used to emit lasers of the same color. The plurality of conductive pins 003 are fixed on opposite sides of the side wall 002, and the conductive pins 003 on one side are positive pins, and the conductive pins 003 on the other side are negative pins. As shown Figure 1 As shown, the multiple light-emitting chips 004 can be arranged in four rows. The first row of light-emitting chips 004 is configured to emit green laser light, the second row of light-emitting chips 004 is configured to emit blue laser light, and the third and fourth rows of light-emitting chips 004 are configured to emit red laser light. Four conductive pins 003 are fixed to opposite sides of the sidewalls. Each row of light-emitting chips 004 is connected in series via wires, with a positive pin and a negative pin connected at each end.

[0004] However, the multi-color lasers in related technologies are relatively large in size and are difficult to miniaturize. Summary of the Invention

[0005] The present application provides a laser that can solve the problem of large volume of multi-color lasers.

[0006] In one aspect, a laser is provided, comprising: a base plate, a tubular sidewall located on the base plate, and a plurality of first-type light-emitting chips, a plurality of second-type light-emitting chips, and a plurality of target adapters located on the base plate and surrounded by the sidewall;

[0007] The first type of light emitting chip and the second type of light emitting chip are used to respectively emit lasers of different colors, and the plurality of first type of light emitting chips and the plurality of second type of light emitting chips are alternately arranged to form a row of light emitting chips;

[0008] The plurality of target transfer stations are located on one side of the row of light-emitting chips in the column direction; in the row direction of the row of light-emitting chips, each of the target transfer stations is located between adjacent light-emitting chips of the first type and the light-emitting chips of the second type;

[0009] Each of the target adapters includes two conductive parts insulated from each other; two of the first-type light-emitting chips, which are respectively located on both sides of the target adapter and are closest to each other, are electrically connected through any one of the two conductive parts; two of the second-type light-emitting chips, which are respectively located on both sides of the target adapter and are closest to each other, are electrically connected through the other of the two conductive parts.

[0010] In another aspect, a laser is provided, comprising a base plate, a tubular side wall located on the base plate, two rows of light-emitting chips and a plurality of target adapters located on the base plate and surrounded by the side wall, and three groups of conductive pins fixed to the side wall; each of the three groups of conductive pins includes two conductive pins fixed to opposite sides of the side wall;

[0011] The first row of the two rows of light-emitting chips includes two types of light-emitting chips arranged alternately, and the wavelengths of lasers emitted by the two types of light-emitting chips are different. The second row of light-emitting chips includes one type of light-emitting chips. The first group of conductive pins of the three groups of conductive pins are located in the same row as the first row of light-emitting chips, the second group of conductive pins are located in the same row as the second row of light-emitting chips, and the third group of conductive pins are located between the first group of conductive pins and the second group of conductive pins.

[0012] The multiple target adapters are located between the two rows of light-emitting chips; in the row direction, each of the target adapters is located between adjacent light-emitting chips of different types in the first row of light-emitting chips; each of the target adapters includes two conductive parts that are insulated from each other; in the first row of light-emitting chips, any two light-emitting chips of the same type that are located on both sides of any target adapter and are closest to each other are electrically connected through any one of the two conductive parts of any target adapter, and the conductive parts in any target adapter that are electrically connected to light-emitting chips of different types are different.

[0013] The beneficial effects of the technical solution provided by this application include at least:

[0014] In the laser provided herein, the first and second light-emitting chips can be alternately arranged in a row of light-emitting chips. This eliminates the need for the first and second light-emitting chips to occupy two rows of light-emitting chips, facilitating miniaturization of the laser. The alternating arrangement of the first and second light-emitting chips can also improve the uniformity of the distribution of the different colors of laser light emitted by the laser.

[0015] Furthermore, a target adapter is provided on one side of the row of light-emitting chips in the column direction, with the target adapter positioned between adjacent first-type light-emitting chips and second-type light-emitting chips. The first-type light-emitting chips and second-type light-emitting chips on either side of the target adapter can be electrically connected via the target adapter. This allows for electrical connection between each first-type light-emitting chip and each second-type light-emitting chip, ensuring proper light emission from both the first-type light-emitting chips and the second-type light-emitting chips. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0017] Figure 1 It is a structural diagram of a laser provided by related technology;

[0018] Figure 2 This is a schematic structural diagram of a laser provided in an embodiment of the present application;

[0019] Figure 3 This is a schematic structural diagram of a target switching station provided in an embodiment of the present application;

[0020] Figure 4 is a structural diagram of another target switching station provided in an embodiment of the present application;

[0021] Figure 5 This is a structural diagram of another target switching station provided in an embodiment of the present application;

[0022] Figure 6 This is a structural diagram of another target switching station provided in an embodiment of the present application;

[0023] Figure 7 is a structural diagram of a target switching station provided by another embodiment of the present application;

[0024] Figure 8 is a structural diagram of another target switching station provided by another embodiment of the present application;

[0025] Figure 9 This is a structural diagram of another target switching station provided by another embodiment of the present application;

[0026] Figure 10 This is a structural diagram of an auxiliary transfer station provided in an embodiment of the present application;

[0027] Figure 11This is a schematic diagram of the structure of another laser provided in an embodiment of the present application. DETAILED DESCRIPTION

[0028] In order to make the objectives, technical solutions and advantages of this application clearer, the implementation methods of this application will be further described in detail below with reference to the accompanying drawings.

[0029] With the development of optoelectronic technology, the application of lasers is becoming more and more extensive. For example, lasers can be used as light sources for laser projection equipment or laser TVs. Due to the good color expression and high color gamut of multi-color lasers, multi-color lasers have gradually become popular in the display field. Currently, the requirements for the miniaturization and luminous effect of multi-color lasers are also becoming increasingly higher. The embodiments of the present application provide a laser that can be relatively small in size and has good distribution uniformity of the various colors of laser light emitted.

[0030] Figure 2 This is a schematic diagram of the structure of a laser provided in an embodiment of the present application. Figure 2 As shown, the laser 10 may include a base plate 101, a tubular side wall 102, a plurality of light-emitting chips, and a plurality of target transfer platforms 104. The side wall 102, the plurality of light-emitting chips, and the plurality of target transfer platforms 104 are all located on the base plate 101, and the side wall 102 surrounds the plurality of light-emitting chips and the plurality of target transfer platforms 104.

[0031] The multiple light-emitting chips may include multiple types of light-emitting chips, and the wavelengths of lasers emitted by different types of light-emitting chips are different. For example, each type of light-emitting chip can emit a laser of one color, and the colors of lasers emitted by different types of light-emitting chips are different. The number of each type of light-emitting chip may be at least one. For example, the multiple light-emitting chips include multiple first-type light-emitting chips 103a and multiple second-type light-emitting chips 103b. The first-type light-emitting chip 103a and the second-type light-emitting chip 103b are two types of light-emitting chips in the multiple types of light-emitting chips. The first-type light-emitting chip 103a and the second-type light-emitting chip 103b are used to emit lasers of different colors, respectively. For example, the first-type light-emitting chip 103a is used to emit green laser light, and the second-type light-emitting chip 103b is used to emit blue laser light. Alternatively, the first-type light-emitting chip 103a is used to emit blue laser light, and the second-type light-emitting chip 103b is used to emit green laser light. Alternatively, the colors of the lasers emitted by the first and second light-emitting chips 103a and 103b may be different from green and blue. For example, the first and second light-emitting chips 103a and 103b may emit red, yellow or orange lasers.

[0032] The multiple first-type light-emitting chips 103a and the multiple second-type light-emitting chips 103b are alternately arranged to form a row of light-emitting chips, that is, the multiple first-type light-emitting chips 103a and the multiple second-type light-emitting chips 103b are located in the same row, and the first-type light-emitting chips 103a and the second-type light-emitting chips 103b in the row are alternately arranged. Figure 2 The row direction of the light emitting chip is the x direction, and the column direction is the y direction. Figure 2 The first row of light-emitting chips, counted in the opposite direction along the y-direction, includes four first-type light-emitting chips 103a and three second-type light-emitting chips 103b. Two first-type light-emitting chips 103a are disposed between every two adjacent second-type light-emitting chips 103b. In this row of light-emitting chips, the first, fourth, and seventh light-emitting chips are all second-type light-emitting chips 103b, and the second, third, fifth, and sixth light-emitting chips are all first-type light-emitting chips 103a.

[0033] Optionally, the first type of light-emitting chips 103a and the second type of light-emitting chips 103b can also be arranged alternately one by one, or alternately in pairs. The alternating arrangement of two objects one by one means that there is an object of another type between every two objects of the same type. For example, when objects a and b are alternately arranged one by one, the arrangement pattern can be "ababab..." or "bababa...". The alternating arrangement of two objects two by two means that the number of different types of objects between two objects of the same type is 2. For example, when objects a and b are alternately arranged in pairs, the arrangement pattern can be "aabbaabb..." or "bbaabbaa...". Optionally, the number of alternating first type of light-emitting chips 103a and second type of light-emitting chips 103b can be set arbitrarily. For example, the two types of light-emitting chips can be arranged in "abaabab", "aabbaba" or other ways. In the embodiment of the present application, the specific alternating method of the first type of light-emitting chips 103a and the second type of light-emitting chips 103b is not limited.

[0034] The plurality of target transfer platforms 104 may be located on one side of the row of light emitting chips in the column direction (eg, y direction). Figure 2 In the embodiment of the present application, the multiple target transfer platforms 104 are located below the multiple first-type light-emitting chips 103a and the multiple second-type light-emitting chips 103b. In the row direction of the row of light-emitting chips (such as the x-direction), each target transfer platform 104 is located between the adjacent first-type light-emitting chips 103a and the second-type light-emitting chips 103b. In this way, each target transfer platform 104 is staggered with any light-emitting chip in both the x-direction and the y-direction. In the embodiment of the present application, an object is located between two other objects in a certain direction, which means that the center point of the object is located between the center points of the two other objects in that direction.

[0035] Each type of light-emitting chip in the embodiment of the present application can be connected in series, such as the plurality of first-type light-emitting chips 103a connected in series, and the plurality of second-type light-emitting chips 103b connected in series, so that each type of light-emitting chip receives a uniform current, causing each light-emitting chip to emit a corresponding color of laser light under the action of the received current. If two adjacent light-emitting chips of the same type are not separated by other light-emitting chips, the two light-emitting chips of the same type can be directly connected via wires. If two adjacent light-emitting chips of the same type are separated by other light-emitting chips, the wires between the two light-emitting chips of the same type can be connected via the target adapter 104.

[0036] Optionally, the wire can be a gold wire, which can be placed between two objects through a gold wire bonding process to connect the two objects. The wire has a maximum fuse current. When the current passing through the wire exceeds the maximum fuse current, the wire will fuse, causing consequences such as a short circuit or open circuit. The fuse current I corresponding to the wire satisfies Wherein, ρ represents resistivity, D represents the wire diameter of the wire, l represents the wire length, and k represents the thermal conductivity of the wire. For example, in the embodiment of the present application, the thermal conductivity k of the wire can be equal to 310 watts / meter·degree (that is, W / (m·K), where K refers to degrees Kelvin, and can also be replaced by degrees Celsius). From this relationship, it can be seen that the maximum melting current of the wire is related to the wire diameter and length of the gold wire. When the material and wire diameter of the wire are certain, the longer the wire, the easier it is for the wire to melt when current flows through it. In the embodiment of the present application, when bonding the wires between light-emitting chips, a target adapter is used to transfer the gold wires between two similar light-emitting chips that are far apart, ensuring that the length of each section of the wire is short, avoiding the melting of the wire, and improving the reliability of the laser.

[0037] like Figure 2As shown, each target adapter 104 includes two conductive parts that are insulated from each other, such as a first conductive part 1041 and a second conductive part 1042. For any target adapter 104, two first-type light-emitting chips 103a that are located on both sides of the target adapter 104 in the x-direction and are closest to each other are electrically connected through any conductive part of the two conductive parts of the target adapter 104. The two first-type light-emitting chips 103a can also be referred to as two adjacent first-type light-emitting chips 103a. Two second-type light-emitting chips 103b that are located on both sides of the target adapter 104 and are closest to each other are electrically connected through the other conductive part of the two conductive parts of the target adapter 104. The two second-type light-emitting chips 103b can also be referred to as two adjacent second-type light-emitting chips 103b. In other words, any two light-emitting chips of the same type that are located on both sides of any target adapter 104 in the x-direction and are closest to each other are electrically connected through any conductive part of the target adapter 104. Furthermore, the conductive portions in the target adapter 104 that are electrically connected to different types of light-emitting chips are different, that is, each conductive portion is electrically connected to a type of light-emitting chip.

[0038] It should be noted that in the embodiments of the present application, it is only necessary to ensure that different types of light-emitting chips are connected to different conductive portions of the target adapter 104. The embodiments of the present application do not limit which conductive portion each type of light-emitting chip is connected to. For example, the first conductive portion 1041 of each target adapter 104 can be connected to the first type of light-emitting chip 103a, and the second conductive portion 1042 can be connected to the second type of light-emitting chip 103b; or the first conductive portion 1041 of some target adapters 104 can be connected to the first type of light-emitting chip 103a, and the second conductive portion 1042 of some target adapters 104 can be connected to the first type of light-emitting chip 103a.

[0039] For example, Figure 2The third and fifth light-emitting chips are two first-type light-emitting chips 103a located on both sides of the second target adapter 104, and are also two first-type light-emitting chips 103a located on both sides of the third target adapter 104. The third and fifth light-emitting chips are electrically connected through a conductive portion (such as conductive portion 1041) in the second target adapter 104 and a conductive portion (such as conductive portion 1041) in the third target adapter 104. The first and fourth light-emitting chips are two second-type light-emitting chips 103b located on both sides of the first target adapter 104, and are also two second-type light-emitting chips 103b located on both sides of the second target adapter 104. The first and fourth light-emitting chips are electrically connected through a conductive portion (such as conductive portion 1041) in the first target adapter 104 and a conductive portion (such as conductive portion 1042) in the second target adapter 104. The fourth and seventh light-emitting chips are two second-type light-emitting chips 103b located on both sides of the third target transfer stage 104, and are also two second-type light-emitting chips 103b located on both sides of the fourth target transfer stage 104. The fourth and seventh light-emitting chips are electrically connected via a conductive portion (e.g., conductive portion 1042) in the third target transfer stage 104 and a conductive portion (e.g., conductive portion 1042) in the fourth target transfer stage 104.

[0040] Because different types of light-emitting chips have different operating conditions, they need to be connected separately to ensure that they are in two separate circuits. In this embodiment, two similar light-emitting chips that are far apart are connected via the target adapter 104. The target adapter can also achieve current shunting between the different types of light-emitting chips through its two mutually insulated conductive parts, preventing damage to the light-emitting chips due to cross-current, and ensuring the feasibility of alternating different types of light-emitting chips in the same row.

[0041] In the embodiment of the present application, the first type of light-emitting chip 103a and the second type of light-emitting chip 103b are arranged in the same row, without occupying two rows of positions, which can be conducive to the miniaturization of the laser. In addition, the first type of light-emitting chip 103a and the second type of light-emitting chip 103b are arranged alternately, which can make the distribution uniformity of the laser light emitted by the first type of light-emitting chip 103a and the second type of light-emitting chip 103b higher, and the distribution uniformity of the laser light of various colors emitted by the laser is higher. When a multi-color laser is used as the light source of a projection device, the higher the uniformity of the various colors of laser light emitted by the multi-color laser, the better the display effect of the projection image formed based on the laser light. Therefore, the laser in the embodiment of the present application, when used as the light source of a projection device, can improve the display effect of the projection image projected by the projection device.

[0042] In summary, in the laser provided by the embodiments of the present application, the first and second light-emitting chips can be alternately arranged in a row of light-emitting chips. This eliminates the need for the first and second light-emitting chips to occupy two rows of light-emitting chips, facilitating miniaturization of the laser. The alternating arrangement of the first and second light-emitting chips can also improve the uniformity of the distribution of the different colors of laser light emitted by the laser.

[0043] Furthermore, a target adapter is provided on one side of the row of light-emitting chips in the column direction, with the target adapter positioned between adjacent first-type light-emitting chips and second-type light-emitting chips. The first-type light-emitting chips and second-type light-emitting chips on either side of the target adapter can be electrically connected via the target adapter. This allows for electrical connection between each first-type light-emitting chip and each second-type light-emitting chip, ensuring proper light emission from both the first-type light-emitting chips and the second-type light-emitting chips.

[0044] Optionally, the base plate 101 may be made of metal (such as copper) or ceramic. The side wall 102 may also be made of metal or ceramic.

[0045] Optionally, please continue to refer to Figure 2 The plurality of light-emitting chips in the laser 10 may further include a plurality of third-type light-emitting chips 103c. The colors of the laser light emitted by the first-type light-emitting chip 103a, the second-type light-emitting chip 103b, and the third-type light-emitting chip 103c are all different. For example, the third-type light-emitting chip 103c is configured to emit red laser light. Figure 2 The number of the third type of light-emitting chips 103c is 7 for illustration. It should be noted that the number of each type of light-emitting chips in the embodiment of the present application can be designed based on the required color ratio and laser intensity, and is not limited in the embodiment of the present application. Optionally, the multiple third type of light-emitting chips 103c can also be arranged in a row, so that the laser 10 can include two rows of light-emitting chips. The multiple target adapters 104 in the embodiment of the present application can be located between a row of light-emitting chips formed by the first type of light-emitting chips 103a and the second type of light-emitting chips 103b and a row of light-emitting chips formed by the third type of light-emitting chips 103c. In the embodiment of the present application, the row of light-emitting chips formed by the first type of light-emitting chips 103a and the second type of light-emitting chips 103b is referred to as the first row of light-emitting chips, and the row of light-emitting chips formed by the third type of light-emitting chips 103c is referred to as the second row of light-emitting chips.

[0046] Please continue to refer to Figure 2In the embodiment of the present application, the laser 10 may further include a plurality of heat sinks 105 and a plurality of reflective prisms 106. Each light-emitting chip in the laser 10 may correspond to a heat sink 105 and a reflective prism 106. Each heat sink 105 may be fixed on the base plate 101, and each light-emitting chip may be fixed on the corresponding heat sink 105 to achieve fixation of the light-emitting chip and the base plate 101. The heat sink 105 may be used to assist in the faster dissipation of heat generated when the light-emitting chip emits light, thereby avoiding damage to the light-emitting chip caused by heat accumulation. Each reflective prism 106 is located on the light-emitting side of the corresponding light-emitting chip. The light-emitting chip emits laser light toward the corresponding reflective prism 106, and the reflective prism 106 emits the incident laser light in a direction away from the base plate 101 (the direction is perpendicular to the x-direction and the y-direction), thereby achieving light emission of the laser 10. Optionally, in the embodiment of the present application, the light-emitting directions of the first type of light-emitting chip 103a and the second type of light-emitting chip 103b may be the same, such as both emitting laser light along the y-direction. In this way, the reflective prisms 106 corresponding to the first type light emitting chip 103 a and the second type light emitting chip 103 b can be arranged in a row on the same side of the first type light emitting chip 103 a and the second type light emitting chip 103 b .

[0047] The upper surface of the heat sink 105 is a conductive layer, which can serve as one electrode of the light-emitting chip, and the upper surface of the light-emitting chip can serve as another electrode. For example, the upper surface of the heat sink where the light-emitting chip is located can serve as the positive electrode of the light-emitting chip, and the upper surface of the light-emitting chip can serve as the negative electrode. The upper surface of a component in the laser 10 described in the embodiment of the present application refers to the surface of the component away from the base plate 101. In the embodiment of the present application, the positive and negative electrodes of each similar light-emitting chip can be connected in series through a wire, thereby realizing the series connection of each similar light-emitting chip. For example, in two adjacent similar light-emitting chips, the upper surface of the heat sink where one light-emitting chip is located is connected to the upper surface of the other light-emitting chip through a wire, thereby realizing the series connection of the two light-emitting chips.

[0048] Optionally, in the embodiment of the present application, a gold wire bonding process can be used to set a wire between the two components to be connected, so that the two ends of the wire are respectively connected to the two components. For example, the wire can be pressed onto the surface metal layer (such as a gold layer) of the object to be connected by a cutter, and pressure is applied, and the pad is heated at the same time, so that the contact area between the wire and the gold layer becomes soft, and the molecules of the wire diffuse to the material it contacts, thereby achieving the purpose of welding. For example, the connection between the adapter and the light-emitting chip, between the adapter and the conductive pin, between the light-emitting chip and the light-emitting chip, and between the light-emitting chip and the conductive pin can be achieved by a gold wire bonding process. Optionally, the diameter of the wire can be 20 microns to 50 microns, such as 23 microns or 50 microns. Multiple wires can be set between the two objects to ensure the connection reliability of the two objects. Optionally, the length of each wire section can be less than or equal to 3 mm. Optionally, the spacing range between adjacent light-emitting chips in the same line can be 1 mm to 3.5 mm.

[0049] Optionally, please continue to refer to Figure 2 , the laser 10 may also include a plurality of conductive pins 108, which may also be referred to as drive pins. The plurality of conductive pins 108 may include a plurality of positive pins and a plurality of negative pins. The positive pin is used to electrically connect to the positive pole of an external power supply, and the negative pin is used to electrically connect to the negative pole of an external power supply. Each type of light-emitting chip in the laser 10 can be connected to a positive pin and a negative pin, so that the external power supply is used to transmit current to the light-emitting chip through the positive pin and the negative pin. Optionally, a portion of the conductive pin 108 passes through the side wall 102 and extends into the enclosed area of the side wall 102, and the other portion is located outside the side wall 102. The portion located outside the side wall 102 can be connected to the positive or negative pole of an external power supply, and the portion located in the enclosed area of the side wall 102 can be connected to the corresponding light-emitting chip through a wire. The connection between the two components described in the embodiments of the present application refers to the electrical connection of the two components.

[0050] Alternatively, the conductive pin 108 may be in the form of a thin cylinder, or in the form of a rectangular parallelepiped, or the side wall 102 may have bosses inside and outside, and the conductive pin 108 may be in the form of a sheet supported on the bosses. Alternatively, the middle area of the sub-wall in the side wall 102 may have an opening, into which the conductive pin 108 may be fixed; or the edge of the sub-wall near the base plate 101 may have a notch, into which the conductive pin 108 may be fixed. The present embodiment does not limit the structure, fixing position, or fixing method of the conductive pin 108; it is only necessary to ensure that the conductive pin 108 can connect the components in the area enclosed by the side wall 102 to the external power supply.

[0051] Optionally, the multiple conductive pins 108 can be respectively located on both sides of the side wall 102, such as the positive pin is located on one side of the side wall 102, and the negative pin is located on the opposite side of the positive pin in the side wall 102. The side wall 102 can be surrounded by multiple sub-walls. For example, if the side wall 102 is in the shape of a square tube and the orthographic projection of the side wall 102 on the base plate 101 is roughly rectangular, then the side wall 102 can be regarded as being surrounded by four sub-walls. The multiple conductive pins 108 are respectively fixed to two opposite sub-walls in the side wall 102. For example, the positive pins are all fixed to the first sub-wall, and the negative pins are all fixed to the second sub-wall opposite to the first sub-wall. Optionally, the two opposite sub-walls can be arranged along the row direction of the light-emitting chips (such as the x direction). A conductive pin can be provided in each of the two areas of the two sub-walls aligned with each row of light-emitting chips, and at least some of the light-emitting chips in the row of light-emitting chips can be connected to the two conductive pins 108 in the two areas. Optionally, each of the two sub-walls may be provided with both a positive electrode pin and a negative electrode pin, which is not limited in the embodiment of the present application.

[0052] Optionally, the number of positive pins in the plurality of conductive pins 108 of the laser 10 can be equal to the number of negative pins. Optionally, the number of conductive pins 108 can be twice the number of types of light-emitting chips in the laser 10. Each type of light-emitting chip can be connected in series and connected to one positive pin and one negative pin. Different types of light-emitting chips are connected to different positive pins, and different types of light-emitting chips are also connected to different negative pins. In other words, different types of light-emitting chips do not need to share conductive pins.

[0053] like Figure 2 As shown, the laser 10 includes three types of light-emitting chips and six conductive pins 108, specifically three positive pins and three negative pins. The six conductive pins 108 can be divided into three groups of conductive pins, and each group of conductive pins is arranged in two conductive pins in the x-direction. For example, the three groups of conductive pins are the first group of conductive pins, the third group of conductive pins, and the second group of conductive pins in the opposite direction of the y-direction. The first group of conductive pins can be arranged corresponding to the first row of light-emitting chips, and the two conductive pins in the first group of conductive pins are respectively located at the two ends of the first row of light-emitting chips in the row direction. The two conductive pins are arranged in a row with the first row of light-emitting chips, that is, in the same row. The second group of conductive pins can be arranged corresponding to the second row of light-emitting chips, and the two conductive pins in the second group of conductive pins are respectively located at the two ends of the second row of light-emitting chips in the row direction. The two conductive pins are arranged in a row with the second row of light-emitting chips. The third group of conductive pins may not be arranged corresponding to the light-emitting chips.

[0054] Optionally, each group of conductive pins includes a positive pin and a negative pin. A type of light-emitting chip in each row of light-emitting chips is electrically connected to a group of conductive pins provided for the light-emitting chip in that row. Optionally, the positive pins of the six conductive pins 108 can be located on the same side, such as being fixed to the left sub-wall of the side wall 102, and the negative pins can also be located on the same side, such as being fixed to the right sub-wall of the side wall 102. For example, Figure 2 The second type of light emitting chip 103b can be connected to the first group of conductive pins, that is, Figure 2 Counting from the top down, the first positive pin and the first negative pin are shown. The first type of light-emitting chip 103a can be connected to the third group of conductive pins, namely, the second positive pin and the second negative pin. The third type of light-emitting chip 103c can be connected to the second group of conductive pins, namely, the third positive pin and the third negative pin. Optionally, a group of conductive pins can also include two positive pins or two negative pins, and the positive pins and negative pins connected to a type of light-emitting chip in a row of light-emitting chips can belong to two groups of conductive pins respectively.

[0055] Optionally, the number of conductive pins 108 may be less than twice the number of light emitting chip types. In this case, at least two types of light emitting chips may share conductive pins 108, that is, connected to the same positive pin or negative pin, which is not limited in this embodiment of the application.

[0056] The structure of the target transfer station 104 in the laser 10 is described below with reference to the accompanying drawings.

[0057] In an optional implementation of the target switching station 104, Figure 3 is a structural diagram of a target switching station provided in an embodiment of the present application. Figure 2 The target switching station 104 shown in FIG. Figure 3 FIG. 1 is a top view of the target transfer station 104 shown in FIG. Figure 3 As shown, the target transfer platform 104 further includes: a first insulator 1043 and a second insulator 1044. The first insulator 1043, the first conductive portion 1041, the second insulator 1044 and the second conductive portion 1042 in the target transfer platform 104 can be arranged in a direction away from the bottom plate 101 (eg Figure 3 The z direction in the figure) are stacked in sequence.

[0058] There is a partial area in the first conductive portion 1041 that is not covered by the second insulator 1044 and the second conductive portion 1042 . The partial area is at least distributed on two opposite sides of the second insulator 1044 and is used for connecting wires. Figure 2 and Figure 3 Take the example where the partial area is located on two opposite sides of the second insulator 1044. Optionally, Figure 4is a structural diagram of another target switching station provided in an embodiment of the present application. Figure 4 The target switching station 104 shown in FIG can also be Figure 3 FIG. 1 is a top view of the target transfer station 104 shown in FIG. Figure 4 As shown, the partial area of the first conductive portion 1041 not covered by the second insulator 1044 can half surround the second insulator 1044. If the second insulator 1044 is in the shape of a quadrangular prism, the partial area is located on three sides of the second insulator 1044. Alternatively, Figure 5 This is a structural diagram of another target switching station provided in an embodiment of the present application. Figure 5 The target switching station 104 shown in FIG can also be Figure 3 FIG. 1 is a top view of the target transfer station 104 shown in FIG. Figure 5 As shown, a partial area of the first conductive portion 1041 that is not covered by the second insulator 1044 can surround the second insulator 1044 , and the partial area is ring-shaped.

[0059] Optionally, the first conductive portion 1041 may cover the entire area of the surface of the first insulator 1043 away from the base plate 101, or may cover a portion of the surface. The second conductive portion 1042 may cover the entire area of the surface of the second insulator 1044 away from the base plate 101, or may cover a portion of the surface.

[0060] Optionally, the first insulator 1043 and the second insulator 1044 can be columnar, and the first conductive part 1041 and the second conductive part 1042 can be sheet-shaped. The first conductive part 1041 and the second conductive part 1042 can be made of a metal alloy. Optionally, the first conductive part 1041 and the second conductive part 1042 can both be a titanium / platinum / gold structure, that is, including a titanium layer, a platinum layer and a gold layer stacked in sequence in the z direction. Optionally, the three metals can also be replaced by other metals, which is not limited in the embodiment of the present application. Optionally, the material of the first insulator 1043 and the second insulator 1044 can be aluminum nitride, aluminum oxide or other insulating materials, which is not limited in the embodiment of the present application.

[0061] Optionally, when forming the target transfer platform 104, the first conductive portion 1041, the second insulator 1044, and the second conductive portion 1042 can be sequentially provided on the first insulator 1043. The first conductive portion 1041 and the second conductive portion 1042 can be formed by electroplating. Alternatively, the first conductive portion 1041 can be plated on the first insulator 1043, and the second conductive portion 1042 can be plated on the second insulator 1044. The second insulator 1044, plated with the second conductive portion 1042, can then be secured to the first insulator 1043, plated with the first conductive portion 1041.

[0062] Optionally, please continue to refer to Figure 3 The target transfer platform 104 may further include a metal layer 1046 located on the side of the first insulator 1043 near the base plate 101. For example, the metal layer may be constructed of a titanium / platinum / gold structure. Because the metal layer and the base plate 101 are securely fixed, the metal layer 1046 securely fixed to the base plate 101 can enhance the stability of the target transfer platform 104. The metal layer may also be formed by electroplating.

[0063] In another optional implementation of the target switching station 104, Figure 6 This is a structural diagram of another target switching station provided in an embodiment of the present application. Figure 6 As shown, the target transfer station 104 may include a first conductive portion 1041, a second conductive portion 1042, and an insulator 1045. The first conductive portion 1041 and the second conductive portion 1042 are both located on a surface of the insulator 1045 away from the base plate 101. The first conductive portion 1041 and the second conductive portion 1042 are spaced apart to ensure insulation between the first conductive portion 1041 and the second conductive portion 1042. The first conductive portion 1041 and the second conductive portion 1042 may be two parts of a single conductive layer.

[0064] Figure 7 This is a structural diagram of a target switching station provided by another embodiment of the present application. Figure 8 is a structural diagram of another target switching station provided by another embodiment of the present application. Figure 7 and Figure 8 Both can be Figure 6 The top view of the target transfer station is shown in FIG. Figure 7 and Figure 8 As shown, one of the first conductive portion 1041 and the second conductive portion 1042 at least half surrounds the other conductive portion, and the one conductive portion is at least located on two opposite sides of the other conductive portion. Figure 7 As shown, the first conductive portion 1041 half surrounds the second conductive portion 1042. If the second conductive portion 1042 is rectangular, the first conductive portion 1041 surrounds three sides of the second conductive portion 1042. Figure 8 As shown, the first conductive portion 1041 is ring-shaped and surrounds the second conductive portion 1042 .

[0065] like Figure 6 As shown, the insulator 1045 in the target adapter 104 can be a complete column, with only the first conductive portion 1041 and the second conductive portion 1042 spaced apart. Alternatively, the two portions of the insulator 1045 respectively covered by the first conductive portion 1041 and the second conductive portion 1042 can also be spaced apart. Figure 9 This is a structural diagram of another target switching station provided by another embodiment of the present application. Figure 7and Figure 8 Can also be Figure 9 The top view of the target transfer station is shown in FIG. Figure 9 As shown, a groove C is defined between the portion D1 covered by the first conductive portion 1041 and the portion D2 covered by the second conductive portion 1042 in the insulator 1045. The presence of the groove C further ensures mutual insulation between the first conductive portion 1041 and the second conductive portion 1042. Optionally, the depth of the groove C can be less than the height of the insulator 1045. This ensures that each target transfer stage 104 is a single, integral structure, requiring only a single placement, thus simplifying the fabrication of the laser 10.

[0066] Optionally, the first conductive portion 1041 and the second conductive portion 1042 can both be titanium / platinum / gold structures, or other metal structures. Optionally, the insulator 1045 can be made of aluminum nitride, aluminum oxide, or other insulating materials, which are not limited in this embodiment of the application.

[0067] When preparing the target transfer station 104, a metal material layer can be first plated on the insulator 1045, and then a groove can be formed at a set position on the metal material layer to obtain a first conductive portion 1041 and a second conductive portion 1042 spaced apart. For example, the groove can be formed by etching, or the groove can be formed by polishing. Optionally, the etching time can be controlled to continue to form a groove on the insulator 1045 after the groove is formed on the metal material layer. Optionally, a groove can be first formed at a set position on the insulator 1045, and then a metal material can be plated on the surface of the insulator 1045 on both sides of the groove to form the first conductive portion 1041 and the second conductive portion 1042.

[0068] Alternatively, as Figure 6 and 9 As shown, the target transfer platform 104 may further include a metal layer located on the side of the insulator 1045 close to the base plate 101. For example, the metal layer may also be a titanium / platinum / gold structure. This can improve the fixing reliability of the target transfer platform 104 and the base plate 101. The metal layer may also be formed by electroplating.

[0069] It should be noted that, in the embodiment of the present application, for the target adapter 104 in any optional implementation, the two parts of the first conductive portion 1041 located on opposite sides of the second conductive portion 1042 are connected. The two parts of the first conductive portion 1041 can be connected to the two components by wires respectively to achieve the connection of the two components. The second conductive portion 1042 can be connected to wires from other sides other than the two opposite sides. This can reduce the risk of cross-connection between the wires connecting the first conductive portion 1041 and the wires connecting the second conductive portion 1042, reduce the risk of short circuit between devices, and improve the reliability of the laser.

[0070] The arrangement and connection of the adapters in the laser 10 are described below with reference to the accompanying drawings.

[0071] Optionally, please continue to refer to Figure 2 The multiple target transfer platforms 104 in the laser 10 can be arranged in a row along the x-direction. The number of target transfer platforms 104 can be determined based on the number of alternating locations between the first-type light-emitting chips 103a and the second-type light-emitting chips 103b. The alternating locations are where adjacent first-type light-emitting chips 103a and second-type light-emitting chips 103b are located. A target transfer platform 104 is provided between each adjacent first-type light-emitting chip 103a and second-type light-emitting chip 103b.

[0072] In the embodiment of the present application, there are two alternating locations between two adjacent light-emitting chips of the same type separated by another type of light-emitting chip, and the two adjacent light-emitting chips of the same type need to be connected via two target adapters 104 .

[0073] On the one hand, if the number of other types of light-emitting chips between two adjacent light-emitting chips of the same type is small, such as the number of other types of light-emitting chips is less than the number threshold, or the distance between two adjacent target adapters 104 is close, such as the distance is less than the distance threshold, the corresponding conductive parts of the two target adapters 104 can be directly connected by wires. For example, Figure 2 The distance between the second target adapter 104 and the third target adapter 104 is relatively close, and the second conductive portions 1042 of the two target adapters 104 can be directly connected via wires. The number threshold and the distance threshold can be designed accordingly based on the maximum allowable length of the wires, the spacing between the light-emitting chips, and the spacing between the target adapters, and are not specifically limited in this embodiment of the present application.

[0074] On the other hand, if the number of other types of light-emitting chips between two adjacent light-emitting chips of the same type reaches a quantity threshold, or the distance between two adjacent target transfer platforms 104 reaches the distance threshold, at least one auxiliary transfer platform 107 can be further provided between the two target transfer platforms 104. The at least one auxiliary transfer platform 107 is used to connect one of the conductive parts of the two target transfer platforms 104 to achieve the connection of the corresponding conductive parts in the two target transfer platforms 104. The auxiliary transfer platform 107 can be located in the same row as the two target transfer platforms 104, or can be staggered with the two target transfer platforms 104 in the row direction, and it is only necessary to ensure that the auxiliary transfer platform 107 is located between the two target transfer platforms 104 in the row direction. This staggered manner can further avoid cross-connection between different wires and avoid the risk of short circuit. The number of the at least one auxiliary transfer platform 107 is determined based on the distance between the two target transfer platforms 104 and the maximum tolerable length of the wire, and is not specifically limited in the embodiments of the present application.

[0075] For example, Figure 2 As shown, the laser 10 further includes a plurality of auxiliary transfer stages 107. These auxiliary transfer stages 107 are located on a side of the plurality of target transfer stages 104 away from the first light-emitting chip 103a and the second light-emitting chip 103b. For example, these auxiliary transfer stages 107 are located between a row of light-emitting chips consisting of the first light-emitting chip 103a and the second light-emitting chip 103b and the third light-emitting chip 103c. At least two adjacent target transfer stages 104 among the plurality of target transfer stages 104 satisfy the requirement that at least one auxiliary transfer stage 107 is located between the two target transfer stages 104.

[0076] For example, Figure 2 The first target transfer station 104 is farther away from the second target transfer station 104, and an auxiliary transfer station 107 is disposed below the area between the two target transfer stations 104. The first conductive portion 1041 of the first target transfer station 104 is connected to the second conductive portion 1042 of the second target transfer station 104 via the auxiliary transfer station 107. The third target transfer station 104 is farther away from the fourth target transfer station 104, and an auxiliary transfer station 107 is disposed below the area between the two target transfer stations 104. The second conductive portion 1042 of the third target transfer station 104 is connected to the second conductive portion 1042 of the second target transfer station 104 via the auxiliary transfer station 107.

[0077] Optionally, in the embodiment of the present application, at least one auxiliary transfer station 107 may be provided between every two adjacent target transfer stations 104 to transfer the wires between the two target transfer stations 104 through the at least one auxiliary transfer station 107 to avoid cross-connection of the wires.

[0078] Optionally, an auxiliary transfer platform 107 can be used to transfer any two components of the laser 10 that are far apart and need to be connected. At least one type of light-emitting chip in the laser 10 is connected to a conductive pin 108 via a conductive portion in the target transfer platform 104, and the target transfer platform 104 corresponds to the conductive pin 108. At least one auxiliary transfer platform 107 can be provided between the target transfer platform 104 and the conductive pin 108, and a conductive portion in the target transfer platform 104 is connected to the conductive pin 108 via the at least one auxiliary transfer platform 107. The conductive portion is also connected to a target light-emitting chip in the type of light-emitting chip. The target transfer platform 104 can be the target transfer platform 104 closest to the sub-wall of the side wall 102 where the conductive pin 108 is provided, among the multiple target transfer platforms 104 in the laser 10. The target light-emitting chip is any one of the first type of light-emitting chip 103a and the second type of light-emitting chip 103b. The target light-emitting chip is a light-emitting chip of any type that is closest to the sub-wall where the conductive pins 108 are set, and there is at least one other type of light-emitting chip between the target light-emitting chip and the sub-wall, that is, a light-emitting chip of another type different from the target light-emitting chip.

[0079] For example, Figure 2 The first light-emitting chip 103a of the first type is the target light-emitting chip. This light-emitting chip is closest to the left sub-wall, and there is a second light-emitting chip 103b between this sub-wall. Figure 2 The fourth first-type light-emitting chip 103a in FIG is also a target light-emitting chip. This light-emitting chip is closest to the right sub-wall, and there is a second-type light-emitting chip 103b between this sub-wall. Figure 2 An auxiliary adapter 107 is provided between the first target adapter 104 and the second positive pin on the left, and an auxiliary adapter 107 is provided between the fourth target adapter 104 and the second negative pin on the right. The second conductive portion 1042 of the first target adapter 104 is connected to the first type light-emitting chip 103a and is connected to the second positive pin through the auxiliary adapter 107. The first conductive portion 1041 of the four target adapters 104 is connected to the first type light-emitting chip 103a and is connected to the second negative pin through the auxiliary adapter 107. In this way, the first type light-emitting chip 103a in the laser 10 is connected to the second positive pin and the second negative pin.

[0080] In the embodiment of the present application, a plurality of first-type light-emitting chips 103a connected in series are used as an example, with both ends of the plurality of first-type light-emitting chips 103a connected to the conductive pins via the target adapter 104. Alternatively, one end of the plurality of first-type light-emitting chips 103a connected in series is connected to the conductive pins via the target adapter 104, and the other end is directly connected to the conductive pins via a wire; and one end of the plurality of second-type light-emitting chips 103b connected in series is connected to the conductive pins via the target adapter 104, and the other end is directly connected to the conductive pins via a wire. For example, in a row of light-emitting chips consisting of the first-type light-emitting chips 103a and the second-type light-emitting chips 103b in the laser 10, one end is the first-type light-emitting chip 103a, and the other end is the second-type light-emitting chip 103b.

[0081] Figure 10 This is a structural diagram of an auxiliary transfer station provided in an embodiment of the present application. Figure 2 The auxiliary transfer station 107 shown in FIG. Figure 10 A top view of the auxiliary transfer station 107 in FIG. Figure 10 As shown, the auxiliary transfer platform 107 may include a first metal layer 1071, an insulator 1072, and a second metal layer 1073 stacked in sequence along a direction away from the base plate 101 (z direction). The second metal layer 1073 is used to connect the wires. The second metal layer 1073 can cover the entire area or a portion of the surface of the insulator 1072 away from the base plate 101. The first metal layer 1071 can refer to the introduction of the metal layer on the side close to the base plate 101 in the above-mentioned target transfer platform 104, and the second metal layer 1073 can refer to the introduction of the first conductive portion 1041 or the second conductive portion 1042 in the above-mentioned target transfer platform 104. The embodiments of the present application will not be repeated here.

[0082] Optionally, the structure of the auxiliary transfer stage 107 can be the same as that of the target transfer stage 104. When the auxiliary transfer stage 107 is used as the auxiliary transfer stage 107, only one of the two conductive parts of the structure needs to be used. In this way, when assembling the laser 10, only one transfer stage of the structure needs to be provided, which facilitates the preparation of the laser.

[0083] Figure 11 is a schematic structural diagram of another laser provided in one embodiment of the present application. Figure 11 Can be Figure 2 The cross-sectional view of the laser 10 is shown in FIG. 1 , wherein the cross-sectional view is parallel to the x-direction and perpendicular to the y-direction. Figure 11 As shown, in Figure 2On the basis of the optical fiber, the laser 10 may further include a light-transmitting sealing layer 109 and a collimating lens group 110. The light-transmitting sealing layer 109 covers the side of the side wall 102 away from the bottom plate 101. The collimating lens group 110 may include a plurality of collimating lenses T, which correspond one-to-one to the plurality of light-emitting chips 103 in the laser 10. Each light-emitting chip 103 can emit a laser to the corresponding reflective prism 106. After being reflected on the reflective prism 106, the laser passes through the light-transmitting sealing layer 109 and is emitted to the corresponding collimating lens T. The collimating lens T collimates the incident laser and then emits it, thereby completing the light emission of the laser.

[0084] In summary, in the laser provided by the embodiments of the present application, the first and second light-emitting chips can be alternately arranged in a row of light-emitting chips. This eliminates the need for the first and second light-emitting chips to occupy two rows of light-emitting chips, facilitating miniaturization of the laser. The alternating arrangement of the first and second light-emitting chips can also improve the uniformity of the distribution of the different colors of laser light emitted by the laser.

[0085] Furthermore, a target adapter is provided on one side of the row of light-emitting chips in the column direction, with the target adapter positioned between adjacent first-type light-emitting chips and second-type light-emitting chips. The first-type light-emitting chips and second-type light-emitting chips on either side of the target adapter can be electrically connected via the target adapter. This allows for electrical connection between each first-type light-emitting chip and each second-type light-emitting chip, ensuring proper light emission from both the first-type light-emitting chips and the second-type light-emitting chips.

[0086] It should be noted that the terms "including" and "having" and any variations thereof in this application are intended to cover but not exclusively include. In the embodiments of the present application, the terms "first", "second" and "nth" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance. The term "at least one" refers to one or more. The term "plurality" refers to two or more, unless otherwise clearly defined. "Approximately" and "approximately" mean that within an acceptable error range, those skilled in the art can solve the technical problems to be solved within a certain error range and basically achieve the technical effects to be achieved. In the accompanying drawings, the sizes of layers and regions may be exaggerated for clarity of illustration. It will also be understood that when an element or layer is referred to as being "on" another element or layer, it may be directly on the other element, or there may be an intermediate layer. Similar reference numerals throughout the text indicate similar elements.

[0087] The above description is merely an optional embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. A laser, characterized in that: The laser comprises: a bottom plate, a tubular side wall located on the bottom plate, and a plurality of first-type light-emitting chips, a plurality of second-type light-emitting chips and a plurality of target adapters located on the bottom plate and surrounded by the side wall; The first type of light emitting chip and the second type of light emitting chip are used to respectively emit lasers of different colors, and the plurality of first type of light emitting chips and the plurality of second type of light emitting chips are alternately arranged to form a row of light emitting chips; The plurality of target transfer stations are located on one side of the row of light-emitting chips in the column direction; in the row direction of the row of light-emitting chips, each of the target transfer stations is located between adjacent light-emitting chips of the first type and the light-emitting chips of the second type; Each of the target adapters includes two conductive parts that are insulated from each other; two of the first-type light-emitting chips that are located on both sides of the target adapter and are closest to each other are electrically connected through any one of the two conductive parts; two of the second-type light-emitting chips that are located on both sides of the target adapter and are closest to each other are electrically connected through the other of the two conductive parts to achieve current diversion between light-emitting chips of different types.

2. The laser according to claim 1, characterized in that The target transfer station further includes a first insulator and a second insulator, the two conductive parts include a first conductive part and a second conductive part, and the first insulator, the first conductive part, the second insulator and the second conductive part are stacked in sequence in a direction away from the bottom plate; There is a partial area in the first conductive portion that is not covered by the second insulator and the second conductive portion, and the partial area is distributed at least on two opposite sides of the second insulator.

3. The laser according to claim 1, characterized in that The target transfer station further includes an insulator, wherein the first conductive portion and the second conductive portion are both located on a surface of the insulator away from the bottom plate; The two conductive parts are spaced apart from each other, and one of the two conductive parts at least half surrounds the other conductive part.

4. The laser according to claim 3, characterized in that One of the two conductive parts is ring-shaped and surrounds the other of the two conductive parts.

5. The laser according to claim 3 or 4, characterized in that A groove is formed between a portion of the insulator covered by the first conductive portion and a portion of the insulator covered by the second conductive portion, and a depth of the groove is smaller than a height of the insulator.

6. The laser according to any one of claims 1 to 4, characterized in that The laser further comprises a plurality of auxiliary transfer stages, wherein the plurality of auxiliary transfer stages are located on a side of the plurality of target transfer stages away from the row of light-emitting chips; At least two adjacent target switching stations exist among the plurality of target switching stations, satisfying the following requirement: at least one auxiliary switching station exists between the two target switching stations in the row direction; The at least one auxiliary transfer platform is used to electrically connect one conductive portion of the two target transfer platforms.

7. The laser according to any one of claims 1 to 4, characterized in that The laser further includes a plurality of conductive pins and a plurality of auxiliary transfer stages; The side wall is surrounded by a plurality of sub-walls, and the plurality of conductive pins are respectively fixed to two sub-walls of the plurality of sub-walls that are opposite to each other in the row direction; the plurality of auxiliary transfer platforms are located on the bottom plate and surrounded by the side walls, and there is at least one auxiliary transfer platform between the target transfer platform close to any of the two sub-walls and a conductive pin on any of the sub-walls; A conductive portion in the target transfer platform close to any of the sub-walls is electrically connected to the one conductive pin through the at least one auxiliary transfer platform, and the one conductive portion is also electrically connected to a target light-emitting chip in the row of light-emitting chips; The target light-emitting chip is any one of the first and second light-emitting chips; the target light-emitting chip is close to any sub-wall, and there is at least one light-emitting chip of another type different from any one of the light-emitting chips between the target light-emitting chip and any sub-wall.

8. The laser according to claim 7, characterized in that The plurality of conductive pins include a plurality of positive pins and a plurality of negative pins, the plurality of positive pins are fixed to one of the two sub-walls, and the plurality of negative pins are fixed to the other of the two sub-walls; The multiple first-type light-emitting chips are connected in series and electrically connected to one positive electrode pin and one negative electrode pin, and the multiple second-type light-emitting chips are connected in series and electrically connected to one positive electrode pin and one negative electrode pin; and the first-type light-emitting chip and the second-type light-emitting chip are electrically connected to different positive electrode pins and electrically connected to different negative electrode pins.

9. The laser according to any one of claims 1 to 4, characterized in that: The laser further comprises a plurality of third-type light-emitting chips, wherein the first-type light-emitting chips, the second-type light-emitting chips and the third-type light-emitting chips are all configured to emit lasers of different colors respectively; The plurality of target transfer stations are located between the row of light-emitting chips and the plurality of third-type light-emitting chips.

10. A laser, characterized in that: The laser includes a base plate, a tubular side wall located on the base plate, two rows of light-emitting chips and a plurality of target adapters located on the base plate and surrounded by the side wall, and three groups of conductive pins fixed to the side wall; each of the three groups of conductive pins includes two conductive pins fixed to opposite sides of the side wall; The first row of the two rows of light-emitting chips includes two types of light-emitting chips arranged alternately, and the wavelengths of lasers emitted by the two types of light-emitting chips are different. The second row of light-emitting chips includes one type of light-emitting chips. The first group of conductive pins of the three groups of conductive pins are located in the same row as the first row of light-emitting chips, the second group of conductive pins are located in the same row as the second row of light-emitting chips, and the third group of conductive pins are located between the first group of conductive pins and the second group of conductive pins. The plurality of target adapters are located between the two rows of light-emitting chips; In the row direction, each of the target transfer platforms is located between adjacent light-emitting chips of different types in the first row of light-emitting chips; each of the target transfer platforms includes two conductive parts that are insulated from each other; In the first row of light-emitting chips, any two light-emitting chips of the same type, which are located on both sides of any target adapter and are closest to each other, are electrically connected through any one of the two conductive parts of any target adapter, and the conductive parts in any target adapter that are electrically connected to light-emitting chips of different types are different.

Citation Information

Patent Citations

  • Laser

    CN113394654A