Integrated circuit and method of operation of a temperature sensor for an integrated circuit

Abstract

The present disclosure provides an integrated circuit including a memory and a peripheral circuit having a temperature sensor for automatically adjusting an operating voltage. The temperature sensor includes a first circuit for generating a temperature-dependent voltage (TDV) that depends on an operating temperature of the integrated circuit, and a second circuit for generating a plurality of temperature reference voltages based on or greater than a program code. One or more comparator circuits compare individual ones of the plurality of reference voltages with the TDV to generate one or more comparison signals indicative of the operating temperature of the integrated circuit.

Description

Technical Field

[0001] This disclosure relates to a temperature sensor that can be used within an integrated circuit. Background Technology

[0002] In many integrated circuits, including memory devices, various circuit components (such as memory array cells in the circuit) behave in a way that is affected by chip temperature. It is desirable to provide circuitry suitable for implementation on integrated circuits to provide temperature information and to use this information to adjust the operating parameters of the circuitry on the integrated circuit (such as the operating voltage of the memory array). Summary of the Invention

[0003] To mitigate the drawbacks of temperature effects during memory operation, temperature sensing components are integrated into the integrated circuit memory system. Temperature sensing components are also suitable for other applications.

[0004] An integrated circuit is described, comprising first circuitry for generating a temperature-dependent voltage (TDV) that changes in response to variations in the operating temperature of the integrated circuit. The integrated circuit's memory stores one or more program codes. The integrated circuit also includes second circuitry for generating a plurality of temperature reference voltages based on the one or more program codes. In one example, the temperature reference voltages change in response to variations in the operating temperature of the integrated circuit. The change in TDV in response to variations in operating temperature differs from the changes in the plurality of temperature reference voltages in response to variations in operating temperature. In one example, the TDV has a positive temperature coefficient over the operating temperature range of the IC, and the plurality of temperature reference voltages are temperatures independent of the operating temperature range of the IC. The integrated circuit also includes one or more comparator circuits for comparing individual temperature reference voltages of the plurality of temperature reference voltages with the TDV and generating one or more output signals indicating the operating temperature of the integrated circuit.

[0005] A method for operating a temperature sensor for an integrated circuit is described, wherein the method includes generating a temperature-time reference voltage (TDV) that changes in response to a change in the operating temperature of the integrated circuit. The memory of the integrated circuit stores one or more program codes. Multiple temperature reference voltages are generated based on the one or more program codes. In one example, the change in TDV in response to a change in operating temperature differs from the changes in the multiple temperature reference voltages in response to a change in operating temperature. Individual temperature reference voltages of the multiple temperature reference voltages are compared with the TDV to generate one or more output signals indicating the operating temperature of the integrated circuit.

[0006] An integrated circuit is also described, comprising a first voltage generator for generating a first voltage that changes with temperature. A reference voltage generator circuit of the integrated circuit generates a plurality of temperature reference voltages based on one or more program codes, the plurality of temperature reference voltages being temperatures independent of the operating temperature range of the integrated circuit. A comparator circuit of the integrated circuit compares the plurality of temperature reference voltages with the first voltage. The integrated circuit also includes logic for generating a digital signal indicating temperature in response to the comparator circuit.

[0007] Other aspects and advantages of this disclosure will become apparent upon review of the following figures, detailed description, and scope of the claims. Attached Figure Description

[0008] Figure 1 Here is a simplified block diagram of an integrated circuit that includes a temperature sensor as described herein.

[0009] Figure 2 For suitability for Figure 1 A simplified diagram of a NAND flash memory array in a circuit.

[0010] Figure 3 Showing a variable memory array (such as Figure 2 The operating voltage of the temperature in the memory.

[0011] Figure 4 This is a simplified diagram of a temperature sensor according to an embodiment of the present disclosure.

[0012] Figure 5 Show Figure 4 A graph showing the correlation between the temperature-dependent voltage (TDV) generated within the temperature sensor and the temperature.

[0013] Figure 6 The graphs show the TDV of two different ICs as a function of temperature.

[0014] Figure 7 Circuit diagram of a temperature reference voltage generator for generating multiple temperature reference voltages.

[0015] Figure 8A Show Figure 4 The graph shows the nonlinear variation of TDV with temperature.

[0016] Figure 8B Show Figure 8A The curve graph, wherein the segments of the curve graph are further subdivided into more refined segments.

[0017] Figure 9A circuit diagram for a temperature reference voltage generator that generates multiple temperature reference voltages, wherein the temperature reference voltage generator is for... Figure 9 The circuit assumes that TDV is linear.

[0018] Figure 10A Another circuit diagram for a temperature reference voltage generator that generates multiple temperature reference voltages, and Figure 10B To explain TDV and Figure 10A A graph showing the linear relationship between the temperature of the temperature reference voltage generator and the temperature.

[0019] Figure 11A Show Figure 4 An example implementation of a comparator circuit for a temperature sensor, wherein various comparison operations are performed in parallel.

[0020] Figure 11B Show Figure 4 An example implementation of a comparator circuit for a temperature sensor, wherein various comparison operations are performed in series.

[0021] Figure 12 An example implementation of an adjustment voltage generator that generates multiple adjustment voltages for a temperature sensor is shown.

[0022] Figure 13A An example method is shown for manufacturing an IC and calibrating a temperature sensor within the IC.

[0023] Figure 13B An example method for operating a temperature sensor within an IC is shown.

[0024] Figure 14 The circuit diagram for generating TDV and bandgap voltage VBG.

[0025] Explanation of reference numerals in the attached figures

[0026] 1. 401, 401a, 401b, 470a, 470b: Integrated Circuits

[0027] 10: Memory Array

[0028] 11: Non-process change dependent temperature sensor

[0029] 20: Memory unit

[0030] 21: Bit line BL N-1

[0031] 22: SSL cable

[0032] 23: GSL line

[0033] 24: Word line WL N-1

[0034] 25: CSL line

[0035] 30: Word line voltage read level

[0036] 400: Temperature sensor

[0037] 404: Temperature-dependent voltage generator

[0038] 408, 408a: Temperature reference voltage generator

[0039] 412, 412a, 412b: TDV

[0040] 416, 416a, 416b, 416c, 416f, 416g, 416ha, 416hb, 416M, 416p, 416(a,1), 416(a,2), 416(a,3), 416(a,5), 416(a,7), 416(a,Pa), 416(b,1), 416(b,2), 416(b,3), 416(b,Pb), 416(c,1), 416(c,2), 416(c,3), 416(d,1), 416(N-1,1), 416(N-1,2), 416(N-1,3), 416(N-1,P(N-1)), 416(N,1): Temperature reference voltage Vref

[0041] 416(a,x): Output reference voltage Vref

[0042] 420, 420a, 420b: Comparator circuits

[0043] 424, 424a, 424b, 424c, 424M: Comparison results COMP

[0044] 428: Temperature Measurement Circuit

[0045] 432: Temperature signal T

[0046] 440: Memory

[0047] 444, 444a, 444b, 444c, 444d, 444i, 444N: Adjust program code

[0048] 500, 600, 800, 1080: Curve graph

[0049] 704: Bandgap voltage generator

[0050] 706: Bandgap voltage VBG

[0051] 708, 708a, 708b, 708c, 708d, 708i, 708N: Adjustable voltage generator

[0052] 710, 710a, 710b, 710i, 710N: Adjust voltage Vtrim

[0053] 712a, 712b, 712N, 1204: Buffers

[0054] 712y, 712(y+1), 720, 720a, 720b, 720c, 720(N-1), 720N: Nodes

[0055] 714, 1050, 1216: Voltage dividers

[0056] 715a, 715b, 715y, 715(N-1): Smaller voltage dividers

[0057] 802a, 802b, 802c: Sections

[0058] 1052, 1053, 1054: Nodes

[0059] 1060, 1064: Operational amplifiers

[0060] 1102, 1102a, 1102b, 1102c, 1102M, 1152: Comparators

[0061] 1108: Switch Controller

[0062] 1150a, 1150M, 1214, 1214a, 1214b, 1214k: Switches

[0063] 1210, 1210a, 1210b, 1210k: Voltage output terminals

[0064] 1212a, 1212b, 1212k: Resistors

[0065] 1220: Output node

[0066] 1208: Decoder

[0067] 1300, 1360: Methods

[0068] 1304, 1308, 1312, 1316, 1320, 1324, 1328, 1332, 1364, 1368, 1372, 1376, 1380: Steps

[0069] 1404: Operational amplifier

[0070] 1406, 1408, Q1, Q2: Transistors

[0071] 1410: First output node

[0072] 1412: Second output node

[0073] BL 0 to BL N: Bit lines

[0074] CSL: Common Source Line

[0075] GSL: Lower String Select Line

[0076] i: Counting

[0077] R1, R4, R716, R716a, R716b, R716(N-1): Resistors

[0078] R2, R3: Grounding resistors

[0079] SSL: Top String Select Line

[0080] T, Ta, Tf, Tg, Th, Ti, Tp, T(a,1), T(a,2), T(a,5), T(a,7), T(b,1), T(c,1), T(c,2), T(c,3), T(d,1): Temperature

[0081] Ta, Tb: Temperature values

[0082] T[1:B]: Digital signal

[0083] V416b, V416c, V416h, V416i: Intermediate reference voltage

[0084] V1(T) to VN(T): Voltage

[0085] VA, VB: Voltage

[0086] VBL(T), VCSL(T), VGSL(T), VSSL(T), VWL(T): Voltage

[0087] VDD: Supply voltage

[0088] WL 0 to WL N: Word lines Detailed Implementation

[0089] refer to Figures 1 to 14 A detailed description of embodiments of this disclosure is provided.

[0090] Figure 1This is a block diagram of an integrated circuit (IC) 1, including an integrated circuit memory device such as a process-independent temperature sensor 11. IC 1 includes the temperature sensor 11, a memory array 10, and peripheral circuitry including circuits #1, ..., #N. The temperature sensor 11 is a process-independent temperature sensor. For example, the temperature sensor 11 is calibrated so that variations in the manufacturing process of IC 1 do not affect the operation of the temperature sensor 11. In one embodiment, the temperature sensor 11 includes or is coupled to a memory storing one or more adjustment codes 444. The adjustment codes 444 are used to calibrate the temperature sensor 11 so that variations in the manufacturing process of IC 1 do not affect the operation of the temperature sensor 11, as will be discussed in further detail herein.

[0091] Peripheral circuitry generates voltages V1(T) to VN(T) that are controlled to change with temperature in response to the output of temperature sensor 11. The output of temperature sensor 11 is a digital signal T[1:B] indicating the operating temperature of IC 1, the magnitude of which can be controlled by peripheral circuitry. Furthermore, in some embodiments, temperature sensor 11 can directly apply the signal indicating temperature T to memory array 10. In some embodiments, memory array 10 may be a non-volatile memory. In some embodiments, memory array 10 may be a flash memory.

[0092] Although Figure 1 This description illustrates one example application of temperature sensor 11 in IC 1, which includes memory array 10; however, temperature sensor 11 can be used in any other type of IC for any other application. As an example only, temperature sensor 11 can be used in ICs that include a processor, and the temperature T indicated in the output of temperature sensor 11 can be used to control one or more operating parameters of the processor, such as the processor's operating frequency and / or operating voltage. Therefore, Figure 1 It is not intended to limit the use of temperature sensor 11 to a specific application within an integrated circuit memory device, and is used only as an example.

[0093] Figure 2 For use as Figure 1 A schematic diagram of the NAND flash memory array 10 in IC 1. The NAND flash memory array includes multiple bit lines BL0 to BLN, multiple word lines WL0 to WLN, an upper string select line SSL, and a lower string select line GSL. Memory cells (e.g., 20) are connected in series along the bit lines to a common source line CSL and have gates along the corresponding word lines.

[0094] Arrays (such as) Figure 2The peripheral circuitry of the memory array 10 generates voltages that vary with a temperature signal provided by temperature sensor 11. For example, voltage VSSL(T) can be applied to SSL line 22, which is varied by the peripheral circuitry according to temperature. Voltage VBL(T) can be applied to bit line BL N-1 21, which is varied by the peripheral circuitry according to temperature. Voltage VWL(T) can be applied to word line WL N-1 24, which is varied by the peripheral circuitry according to temperature. Voltage VGSL(T) can be applied to GSL line 23, which is varied by the peripheral circuitry according to temperature. Voltage VCSL(T) can be applied to CSL line 25, which is varied by the peripheral circuitry according to temperature. The various operating voltages of the memory array 10 can be individually or in combination adjusted to establish an optimized read window or other performance measurements, such as programming and erasing speed or efficiency.

[0095] During operation, flash memory arrays (such as...) Figure 2 The NAND flash memory array may have operating characteristics that are a function of temperature. Figure 3 An example is shown. Figure 3 This is a graph showing the distribution of threshold voltages for memory cells in the erase state (left) and the programming state (right). As shown, the threshold voltage distribution is higher in the erase state at high temperatures. At room temperature, the threshold voltage distribution in the erase state is at an intermediate level. At low temperatures, the threshold voltage distribution is lower. Similarly, the threshold voltage distribution is higher in the programming state at high temperatures. At room temperature, the threshold voltage distribution in the programming state is at an intermediate level. At low temperatures, the threshold voltage distribution is lower.

[0096] The peripheral circuitry described herein is designed to automatically adjust the word line voltage read level 30 based on temperature to maintain read margin within a specified temperature range in which the device operates. Similarly, the peripheral circuitry can be configured to adjust other voltages in the array to maintain effective operation within specified temperature ranges for various memory operations, including programming, erasing, and reading operations.

[0097] Figure 4 This is a simplified diagram of a temperature sensor 400 implemented on IC 401. In some instances, the temperature sensor 400 can be used as... Figure 1 Temperature sensor 11, and IC 401 can correspond to Figure 1 IC 1.

[0098] In one embodiment, the temperature sensor 400 includes a temperature dependent voltage (TDV) generator 404 for generating a TDV 412. The TDV 412 has a non-zero (e.g., positive) temperature coefficient, and the TDV 412 changes with temperature. Figure 5 Show Figure 4The graph 500 shows the correlation between TDV412 and temperature. Figure 5 As explained, TDV 412 increases with temperature. The TDV412 is used to measure the operating temperature of IC 401 embedded within the temperature sensor 400.

[0099] Note that the temperature being measured by temperature sensor 400 is the temperature at or near TDV generator 408. Therefore, in one embodiment, TDV generator 404 is placed on an area of ​​IC 401 where temperature measurement is required. For example, different sections of IC 401 may have different operating temperatures. If it is necessary to measure the temperature of the memory array within IC 401, in one instance, TDV generator 404 is placed close to the memory array.

[0100] In one embodiment, the temperature sensor 400 further includes a temperature reference voltage generator 408 for generating a plurality of temperature reference voltages Vref 416a, Vref 416b, ..., Vref 416M. Thus, M temperature reference voltages Vref 416 are generated, where M is a suitable positive integer. The temperature reference voltage is also simply referred to herein as a reference voltage. In one embodiment, individual reference voltages Vref 416 are temperature-independent; for example, the voltage value of Vref does not change with temperature within the operating range of IC 401. The term "temperature reference voltage is temperature-independent" is used herein to describe the degree to which a bandgap voltage VBG (discussed herein) with a temperature coefficient of zero or near zero is temperature-independent within the operating range of IC 401. Figure 5 Graph 500 also shows instances of Vref 416, for example, illustrating Vref 416a, Vref 416b, ..., Vref 416M. As explained, Vref 416 does not change with temperature.

[0101] Generally, the temperature-dependent voltage TDV varies with a first function of temperature, and the individual reference voltage Vref416 may have values ​​that vary with one or more different functions of temperature, examples of which are non-temperature-dependent functions. The differences among these functions of temperature provide voltages, where the differences between them provide an indication of the temperature of IC 401.

[0102] In one embodiment, the temperature sensor 400 further includes a comparator circuit 420 with one or more comparators. The comparator circuit 420 compares TDV 412 with individual reference voltages of a plurality of Vrefs 416 and generates a corresponding comparison result COMP 424. For example, the comparator circuit 420 compares TDV 412 with Vref 416a to generate a corresponding comparison result COMP 424a, compares TDV 412 with Vref 416b to generate a corresponding comparison result COMP 424b, compares TDV 412 with Vref 416M to generate a corresponding comparison result COMP 424M, and so on. Therefore, M comparison results COMP 424a, ..., COMP 424M are generated. The temperature measuring circuit 428 receives COMP 424 and generates a temperature signal T 432 having a bit ratio of B.

[0103] like Figure 5 As explained, TDV 412 changes more significantly with temperature within its operating range than Vref among the multiple Vrefs 416. As discussed above, TDV 412 is compared with individual reference voltages of the multiple Vrefs 416 to select the Vref 416 closest to TDV 412. It should be noted that in graph 500, the intersection point of TDV 412 with a specific Vref 416 is associated with the corresponding temperature value. For example, the intersection point of TDV 412 with Vref 416a is associated with the temperature value Ta, and the intersection point of TDV 412 with Vref 416b is associated with the temperature value Tb. Therefore, if the temperature of TDV generator 404 is Ta, then TDV 412 with a value equal to Vref 416a is generated. Similarly, if the temperature of TDV generator 404 is Tb, then TDV 412 with a value equal to Vref 416b is generated, and so on. During a comparison operation performed by comparator circuit 420, if TDV 412 is determined to be equal to or sufficiently close to (for example) Vref 416a, then the temperature sensed by temperature sensor 400 is determined to be Ta. Similarly, if TDV 412 is determined to be equal to or sufficiently close to Vref 416b, then the temperature sensed by temperature sensor 400 is determined to be Tb, and so on.

[0104] Figure 6 Graph 600 shows an example of how the TDV of two different ICs, 401a and 401b, changes with temperature. For example, assume that both ICs 401a and 401b contain a similar example of a temperature sensor 400, and that ICs 401a and 401b output corresponding TDVs 412a and 412b, respectively. Figure 6Explain the variations of TDV 412a and TDV 412b with temperature. Assume that IC 401a and IC 401b have similar designs and similar components (e.g., these ICs are...). Figure 4 Two examples of IC 401), both manufactured by the same manufacturer. Because IC 401a and IC 401b have similar designs and components, the temperature changes of TDV 412a and TDV 412b should ideally be the same; that is, the curves of TDV 412a and TDV 412b should show similar temperature variations. Figure 6 The temperatures should overlap. However, in reality, the temperature dependence of TDV 412a and TDV 412b may differ slightly. Such differences could be due to process variations during the manufacturing of IC 401a and IC 401b. Therefore, to detect the instance temperature "Th" (see... Figure 6 The temperature reference voltage Vref 416ha will be used in IC 470a, while the temperature reference voltage Vref 416hb will be used in IC 470b. Vref 416ha and Vref 416hb have different voltage levels, such as... Figure 6 As explained in the documentation, each of the ICs in IC 470a and IC 470b must be uniquely or individually calibrated for its corresponding temperature sensor to operate accurately.

[0105] In one embodiment, see again Figure 4 Temperature sensor 400 compensates for process variations that may occur during the manufacturing process. For example, temperature sensor 400 receives one or more adjustment program codes 444 calibrated during the manufacturing and / or calibration process of IC 401. Adjustment program codes 444 are stored in memory 440.

[0106] exist Figure 4In the example described herein, memory 440 is "on-chip" memory, i.e., contained within IC 401. However, in another example, memory 440 is "off-chip" memory, i.e., located outside of IC 401. In one example, memory 440 includes one or more parameter registers, such as non-volatile parameter registers. In one example, memory 440 includes one or more Write-Once Read-Many (WORM) memories, for example, one or more WORM registers (e.g., where information cannot be modified once written, but can be read multiple times). In one example, memory 440 includes one or more programmable fuses, wherein adjustment program code 444 is programmed. In one example, memory 440 includes one or more flash memory cells, and / or another type of non-volatile memory into which adjustment program code 444 can be written, and accessible by reference voltage generator 408. For example, during the calibration phase of the temperature sensor 400, the test platform writes or programs adjustment program code 444 into memory 440 (e.g., via a write command to a register), and the reference voltage generator 408 accesses the adjustment program code 444 from memory 440 during the operation phase of the temperature sensor 400. The previously calibrated adjustment program code 444 is used by the reference voltage generator 408 to generate Vref 416 at an appropriate level for proper temperature detection by the temperature sensor 400, as will be discussed in further detail herein.

[0107] Figure 7 For temperature reference voltage generators (such as Figure 4 The circuit diagram of the temperature sensor 400 and the temperature reference voltage generator 408 can be formed in an integrated circuit (such as...). Figure 4 On IC 401, multiple temperature reference voltages Vref416(a,1), ..., temperature reference voltage 416(N,1) are generated. Figure 4 and Figure 7 The reference voltage generator 408 includes a bandgap voltage generator 704 that generates a bandgap voltage VBG 706. While the bandgap voltage generator 704 is shown as being included within the reference voltage generator 408, in another embodiment, the bandgap voltage generator 704 is external to the reference voltage generator 408, may be external to the temperature sensor 400, and / or may even be external to the IC 401. The bandgap voltage VBG 706 is a fixed or constant voltage that changes with power supply variations, temperature variations, and / or a constant or unchanging circuit load.

[0108] The reference voltage generator 408 also includes multiple adjustable voltage generators 708a, 708b, ..., 708N, where N is a positive integer. Each adjustable voltage generator 708 receives a bandgap voltage VBG 706 and a corresponding adjustment program code 444, and generates a corresponding adjustable voltage Vtrim 710. For example, adjustable voltage generator 708a receives a bandgap voltage VBG 706 and a corresponding adjustment program code 444a, and generates a corresponding adjustable voltage Vtrim 710a; adjustable voltage generator 708b receives a bandgap voltage VBG 706 and a corresponding adjustment program code 444b, and generates a corresponding adjustable voltage Vtrim 710b, and so on. Therefore, multiple adjustable voltages Vtrim 710a, Vtrim 710b, ..., Vtrim 710N are generated by corresponding adjustable voltage generators 708a, 708, ..., 708N. The generation of the adjustment voltage Vtrim will be discussed in further detail in this paper.

[0109] The reference voltage generator 408 also includes a voltage divider 714, which is a trapezoidal resistor. The voltage divider 714 receives an adjusted voltage 710a at node 720a via a corresponding buffer 712a; the voltage divider 714 receives an adjusted voltage 710b at node 720b via a corresponding buffer 712b; the voltage divider 714 receives an adjusted voltage 710N at node 720N via a corresponding buffer 712N, and so on. As will be discussed herein, in one embodiment, the individual buffers 712a, ..., 712N are uniform gain buffers.

[0110] Each node in node 720 outputs a temperature-invariant reference voltage Vref 416. For example, node 720a outputs a temperature-invariant reference voltage Vref 416(a,1), node 720b outputs a temperature-invariant reference voltage Vref 416(b,1), node 720N outputs a temperature-invariant reference voltage Vref 416(N,1), and so on. Figure 7 As shown in the diagram. Therefore, node 720a receives Vtrim 710a and outputs Vref 416(a,1), and thus Vref 416(a,1) is equal to Vtrim 710a. Similarly, Vtrim 710b is equal to Vref 416(b,1), Vtrim 710N is equal to Vref 416(N,1), and so on.

[0111] Voltage divider 714 is a combination of (N-1) smaller voltage dividers 715a, 715b, ..., 715(N-1) connected in series. Two consecutive nodes 712y and node 712(y+1) of voltage divider 714 (where y is an integer within the range of a, ..., N-1) form the nodes corresponding to the smaller voltage dividers 715y. For example, smaller voltage divider 715a is formed between nodes 720a and 720b, smaller voltage divider 715b is formed between nodes 720b and 720c, smaller voltage divider 715(N-1) is formed between nodes 720(N-1) and 720N, and so on.

[0112] Each voltage divider 715 includes a plurality of corresponding resistors R716 coupled between two corresponding terminal nodes. Thus, the plurality of resistors R716a of voltage divider 715a are coupled between node 720a and node 720b, the plurality of resistors R716b of voltage divider 715b are coupled between node 720b and node 720c, the plurality of resistors R716(N-1) of voltage divider 715(N-1) are coupled between node 720(N-1) and node 720N, and so on.

[0113] In voltage divider 715a, a corresponding output reference voltage Vref 416(a,x) is generated between any two consecutive resistors of the plurality of resistors R716a, where x varies between 2 and Pa. For example, the smaller voltage divider 715a between nodes 720a and 720b outputs reference voltages Vref 416(a,2), Vref 416(a,3), ..., Vref 416(a,Pa), where Pa is a suitable positive integer. Furthermore, for example, Vref 416(a,2), ..., Vref 416(a,Pa) are within the voltage range defined by Vref 416(a,1) and Vref 416(b,1) of the two nodes 720a and 720b of the smaller voltage divider 715a. Similarly, the smaller voltage divider 715(N-1) between node 720(N-1) and node 720N outputs reference voltages Vref 416(N-1,2), Vref 416(N-1,3), ..., Vref 416(N-1,P(N-1)), where P(N-1) is a suitable positive integer. Therefore, voltage divider 714 outputs multiple reference voltages Vref 416(a,1), ..., Vref 416(a,Pa), Vref 416(b,1), ..., Vref 416(b,Pb), ..., Vref 416(N-1,1), ..., Vref 416(N-1,P(N-1)), and Vref 416(N,1).

[0114] Figure 8A Show Figure 4 The graph 800 shows the nonlinear variation of TDV 412 with temperature. (Note: The original text contains some formatting errors and inconsistencies. A more accurate translation would require the full context.) Figure 8A The graph is used to explain Figure 7 Operation of the temperature reference voltage generator 408. Reference Figure 7 and Figure 8A Graph 800 illustrates the nonlinear relationship between TDV 412 and temperature. The piecewise linearity of TDV 412 is approximated by dividing the TDV 412 graph into different segments. For example, TDV graph 800 is divided into three segments: 802a, 802b, and 802c, where TDV 412 is approximately or assumed to be linear within each segment (but TDV 412 may not be strictly linear within each segment).

[0115] Therefore, TDV 412 is approximately linear between temperatures T(a,1) and T(b,1), approximately linear between temperatures T(b,1) and T(c,1), and approximately linear between temperatures T(c,1) and T(d,1). Increasing the number of segments dividing the TDV curve improves the accuracy of the piecewise linear approximation, resulting in relatively better temperature sensing, but it increases cost (e.g., an increase in the number of regulating voltage generators). On the other hand, decreasing the number of segments dividing the TDV curve reduces the accuracy of the piecewise linear approximation, resulting in relatively poor temperature sensing, but also saves cost (e.g., a reduction in the number of regulating voltage generators). Therefore, the number of segments dividing the TDV curve can be based on the desired accuracy for temperature readings and / or cost considerations, and can be implementation-specific.

[0116] Therefore, graph 800 represents Figure 7 A special case of the reference voltage generator 408, where N (e.g., the number of adjustable voltage generators) equals four. Therefore, when TDV 412 is divided into three distinct segments (e.g., 802a, 802b, 802c) for approximate piecewise linearity, the number of stages N in the reference voltage generator 408 is 4. Assuming, as Figure 8AAs shown, TDV412 is equal to Vref 416(a,1), Vref 416(b,1), Vref 416(c,1), and Vref 416(d,1) for temperatures T(a,1), T(b,1), T(c,1), and T(d,1), respectively. Therefore, in this scenario, adjustment code 444 is calibrated so that adjustment voltage generator 708a outputs a temperature-invariant reference voltage Vref 416(a,1), adjustment voltage generator 708b outputs a temperature-invariant reference voltage Vref 416(b,1), adjustment voltage generator 708c outputs a temperature-invariant reference voltage Vref 416(c,1), and adjustment voltage generator 708d outputs a temperature-invariant reference voltage Vref 416(d,1).

[0117] As will be discussed in further detail herein, comparator circuit 420 receives a reference voltage Vref and compares it with TDV 412. When TDV 412 is within the threshold range of a specific reference voltage Vref 416(a,1), temperature sensor 400 measures the sensed temperature as T(a,1), because... Figure 8A As shown, TDV 412 is at Vref 416(a,1) at this temperature. Similarly, when TDV 412 is within the critical range of a specific reference voltage Vref 416(b,1), the temperature sensor 400 measures the sensed temperature as T(b,1), because... Figure 8A As shown, TDV 412 is at Vref 416(b,1) at this temperature, etc.

[0118] Figure 8B Show Figure 8A The graph 800, wherein the segments of the graph are further subdivided into finer segments. For example, the segment 802c corresponding to the voltage range between Vref 416(c,2) and Vref 416(d,1) is further subdivided using smaller voltage increments (such as Vref 416(c,2) and Vref 416(c,3)). Thus, segment 802c is defined by... Figure 8B The four voltage levels shown define three corresponding sub-segments.

[0119] Furthermore, the reference voltage Vref 416(c,2) corresponds to temperature T(c,2), and the reference voltage Vref 416(c,3) corresponds to temperature T(c,3), as follows. Figure 8BAs shown in the diagram. However, because the temperature dependence of TDV 412 is approximately linear within the voltage range defined by reference voltages Vref 416(c,1) and Vref 416(d,1), the temperature sensor 400 does not require calibration for the individual reference voltages Vref 416(c,2) and Vref 416(c,3) using any adjustment program code. In practice, reference voltages Vref 416(c,1) and Vref 416(d,1) are calibrated using corresponding adjustment program codes 444c and 444d, respectively. After calibrating these reference voltages, reference voltages Vref 416(c,2) and Vref 416(c,3) are automatically or inherently calibrated due to the assumed linearity of TDV 412 between these reference voltages.

[0120] Therefore, see again Figure 7 The reference voltages Vref 416(a,1), Vref 416(b,1), ..., Vref 416(N,1) are calibrated using the corresponding adjustment program codes 444a, 444b, ..., 444N, respectively. Furthermore, regarding... Figure 8A and Figure 8B As discussed, TDV 412 is approximately linear within the voltage range defined by reference voltages Vref 416(a,1) and Vref 416(b,1); TDV 412 is approximately linear within the voltage range defined by reference voltages Vref 416(b,1) and Vref 416(c,1); TDV 412 is approximately linear within the voltage range defined by reference voltages Vref 416(N-1,1) and Vref 416(N,1); and so on. Therefore, other intermediate reference voltages (such as reference voltages Vref 416(a,2), Vref 416(a,3), Vref 416(b,2), Vref 416(b,3), etc.) do not need to be individually calibrated using corresponding adjustment program codes.

[0121] In one embodiment, comparator circuit 420 compares an individual reference voltage Vref generated by temperature reference voltage generator 408 with TDV 412. Based on the determination that a particular reference voltage is sufficiently close to TDV 412, temperature sensor 400 determines the operating temperature as the temperature corresponding to the particular reference voltage. For example, if comparator circuit 420 determines that Vref 416(c,2) is sufficiently close to TDV 412, then temperature sensor 400 determines the operating temperature as the corresponding temperature T(c,2).

[0122] Figure 9For temperature reference voltage generators (such as Figure 4 The circuit diagram of the temperature sensor 400 and the temperature reference voltage generator 408 can be formed in an integrated circuit (such as...). Figure 4 On IC 401, multiple temperature reference voltages are generated, among which for Figure 9 The circuit assumes linearity of TDV 412. For example, Figure 9 A graph depicting the thermal behavior of TDV 412 is also shown, and as can be seen, TDV 412 changes substantially linearly (or approximately or presumably linearly) with temperature over the range of the temperatures T(a,1) and T(b,1). Therefore, the reference voltage generator 408 has two adjustable voltage generators 708a and 708b for generating reference voltages Vref 416(a,1) and Vref 416(b,1), respectively. Other intermediate reference voltages Vref 416(a,2), ..., Vref 416(a,7) are generated using a voltage divider 715a without any specific calibration of these intermediate reference voltages. Each of the intermediate reference voltages Vref 416(a,2), ..., Vref 416(a,7) is assigned a corresponding temperature. For example, the voltage range between reference voltage Vref 416(a,1) and reference voltage Vref 416(b,1) is equally subdivided among seven equal segments, and intermediate reference voltages Vref 416(a,2), ..., Vref 416(a,7) are then measured. Similarly, the temperature range between T(a,1) and T(b,1) is equally subdivided among seven equal segments, and intermediate temperatures T(a,2), ..., T(a,7) are then measured. Subsequently, the reference voltages Vref 416(a,2), ..., Vref 416(a,7) are assigned corresponding temperatures T(a,2), ..., T(a,7), respectively, as follows: Figure 9 The curve is shown in the figure. As an example, if the comparator circuit 420 measures TDV 412 as equal to the reference voltage Vref 416(a,5), then the temperature sensor 400 measures the operating temperature as T(a,5).

[0123] Although Figure 9The voltage range between reference voltage Vref 416(a,1) and reference voltage Vref 416(b,1) is shown to be divided into seven segments (e.g., thus generating six intermediate reference voltages Vref 416(a,2), ..., intermediate reference voltage Vref416(a,7)), but the number of such subdivisions is merely an example, and any appropriate number of intermediate reference voltages can be generated within the voltage range between reference voltage Vref 416(a,1) and reference voltage Vref 416(b,1).

[0124] Figure 10A For temperature reference voltage generator 408a (which can be used as) Figure 4 A circuit diagram of a temperature reference voltage generator (temperature sensor 400), wherein the temperature reference voltage generator 408a can be formed in an integrated circuit (such as...). Figure 4 On IC 401, multiple temperature reference voltages are generated, and Figure 10B To illustrate TDV 412 and Figure 10A The linear relationship between the temperature and the temperature of the temperature reference voltage generator 408a is shown in Figure 1080.

[0125] The reference voltage generator 408a includes an operational amplifier 1060 that receives an adjusted voltage Vtrim 710a at its non-inverting input, and an operational amplifier 1064 that receives an adjusted voltage Vtrim 710b at its non-inverting input. Operational amplifier 1064 is configured as a uniform gain buffer, with its output coupled to its inverting terminal. The outputs of operational amplifiers 1060 and 1064 are coupled to two nodes 1052 and 1054 of a voltage divider 1050, which functions as a trapezoidal resistor. The voltage divider 1050 has an intermediate node 1053 coupled to the inverting terminal of operational amplifier 1060.

[0126] Node 1052 generates reference voltage Vref 416a, node 1053 generates reference voltage Vref 416g, and node 1054 generates reference voltage Vref 416p. Intermediate nodes between nodes 1052 and 1053 generate intermediate reference voltages V416b, V416c, etc., such as... Figure 10A As shown in the diagram, the intermediate node between node 1053 and node 1054 generates intermediate reference voltages V416h, V416i, etc., as shown in the diagram. Figure 10A As shown in the diagram, Vref 416g is maintained at the regulated voltage Vtrim 710a due to feedback from node 1053. Vref 416a, ..., Vref 416f are higher than Vref 416g.

[0127] Figure 10BThe graphs in the diagram illustrate the interpolation and interpolation regions. For example, suppose temperature sensor 400 is calibrated for a temperature range defined by temperature Ta to temperature Tp. However, the temperature sensor is calibrated for voltages Vref 416g and Vref 416p corresponding to temperatures Tg and Tp, respectively. Furthermore, the TDV 412 curve is approximately linear between the temperature range Ta and Tp. Therefore, in voltage divider 1050, Vref 416g is calibrated to be equal to the adjustment voltage 710a. Voltages Vref 416a, ..., Vref 416f are interpolated based on voltages Vref 416g and Vref 416p to detect temperatures Ta, ..., Tf, respectively. Additionally, an intermediate reference voltage between voltages Vref 416g and Vref 416p is obtained by interpolation based on voltages Vref 416g and Vref 416p.

[0128] Figure 11A Show Figure 4 An example embodiment of the comparator circuit 420a of the temperature sensor 400 is provided, wherein various comparison operations are performed in parallel. The comparator circuit 420a receives reference voltages Vref416a, ..., Vref416M generated by a reference voltage generator 408, an example embodiment of which has been described herein. Figure 7 , Figure 9 as well as Figure 10A Discussion.

[0129] In one embodiment, Figure 11A The comparator circuit 420a includes a plurality of comparators 1102a, 1102b, ..., 1102M connected in parallel. Each comparator 1102 receives TDV 412 and a corresponding reference voltage Vref 416. Individual comparators 1102 compare TDV 412 with the corresponding reference voltage Vref 416 and output a corresponding comparison signal COMP 424. For example, comparator 1102a receives TDV 412 and a corresponding reference voltage Vref 416a and generates COMP 424a. Similarly, comparator 1102b receives TDV 412 and a corresponding reference voltage Vref 416b and generates COMP 424b, and so on. In one embodiment, for comparator 1102a, for example, if Vref 416a > TDV 412, comparator 1102a outputs a bit 1, and otherwise outputs a bit 0. Other comparators operate in a similar manner.

[0130] Such as about Figures 4 to 10BAs discussed, Vref 416a is greater than Vref 416b, Vref 416b is greater than Vref 416c, and so on. In one example use case, it is assumed that TDV 412 is between Vref 416b and Vref 416c. Then each COMP from comparator 1102a and comparator 1102b is bit 1, and each COMP from comparator 1102c, ..., comparator 1102M is bit 0. Therefore, comparator circuit 420a outputs 1100...0.

[0131] Based on the output of comparator circuit 420a, temperature measuring circuit 428 measures TDV 412 between Vref 416b and Vref 416c. For example, temperature measuring circuit 428 measures an operating temperature of Tb, Tc, or the average of Tb and Tc based on the output 1100…0. In one embodiment, temperature measuring circuit 428 includes a decoder or logic circuit that receives the digital output of comparator circuit 420a and outputs a digital signal T[1:B] indicating the temperature. In other embodiments, the signal may be analogous.

[0132] Figure 11B Show Figure 4 An example embodiment of the comparator circuit 420b of the temperature sensor 400 is provided, wherein various comparison operations are performed sequentially. The comparator circuit 420a receives reference voltages Vref416a, ..., Vref416M generated by a reference voltage generator 408, an example embodiment of which has been described herein. Figure 7 , Figure 10A Discussion. In one embodiment, Figure 11BThe comparator circuit 420b includes a single comparator 1152. Comparator 1152 receives TDV 412 and also receives reference voltages Vref 416a, ..., Vref 416M in a series time-multiplexed manner. For example, reference voltages Vref 416a, ..., Vref 416M are provided to comparator 1152 via corresponding switches 1150a, ..., 1150M. Switches 1150a, ..., 1150M are controlled by switch controller 1108. At a given time, one of switches 1150a, ..., 1150M is turned on, and the remaining switches are turned off; therefore, comparator 1152 receives one of the reference voltages Vref 416a, ..., Vref 416M at a specific time. Switches 1150a, ..., 1150M are turned on in a time-multiplexed manner (e.g., one after another), allowing comparator 1152 to compare individual reference voltages with TDV 412 in a series time-multiplexed manner. Comparator 1152 compares TDV 412 with the corresponding reference voltage Vref 416 and outputs a corresponding comparison signal COMP 424. For example, comparator 1152 compares TDV 412 with the corresponding reference voltage Vref 416a and generates COMP 424a. Similarly, comparator 1152 compares TDV 412 with the corresponding reference voltage Vref 416b and generates COMP 424b, and so on. Similar to... Figure 11A , Figure 11B The comparator 1152 outputs bit 1 when Vref416a > TDV 412, and outputs bit 0 in other ways.

[0133] Such as about Figures 4 to 10B As discussed, Vref 416a is greater than Vref 416b, Vref 416b is greater than Vref 416c, and so on. In one example use case, it is assumed that TDV 412 is between Vref 416b and Vref 416c. Then each COMP in COMP 424a and COMP 424b is bit 1, and each COMP in COMP 424c, ..., COMP 424M is bit 0. Therefore, comparator circuit 420b outputs 1100...0. Based on the output of comparator circuit 420b, temperature measuring circuit 428 determines that TDV 412 is between Vref 416b and Vref 416c. Therefore, temperature measuring circuit 428 determines the operating temperature as Tb, Tc, or the average of Tb and Tc.

[0134] Figure 12 Show Figure 7An example embodiment of an adjustable voltage generator (such as adjustable voltage generator 708a) for a temperature sensor 400. Adjustable voltage generator 708a includes a buffer 1204, such as an operational amplifier configured as a uniform gain buffer, that receives a bandgap voltage VBG 706. The output of buffer 1204 is provided to a first terminal node of a voltage divider 1216, the second terminal node of which is coupled to a ground terminal. Resistors 1212a, 1212b, ..., 1212k are coupled between two nodes of voltage divider 1216, with each intermediate node between two consecutive resistors providing a corresponding voltage output 1210. Therefore, voltage divider 1216 provides a plurality of voltage outputs 1210a, 1210b, ..., 1210k, each voltage output being coupled via a corresponding switch 1214 to an output node 1220 providing the adjustable voltage Vtrim 710a. For example, a first voltage output terminal 1210a is coupled to output node 1210 via switch 1214a, a second voltage output terminal 1210b is coupled to output node 1210 via switch 1214b, and so on. Decoder 1208 receives adjustment program code 444a and controls the operation of switches 1214a, ..., 1214k. (The remaining text appears to be unrelated and possibly machine-generated.) Figure 13A Method 1300 further elaborates on the operation of adjusting the voltage generator 708a.

[0135] Figure 13A Showing the manufacturing process Figure 4 An example method 1300 is described, which involves calibrating IC 401 and the temperature sensor 400 within IC 401. Method 1300 includes, at step 1304, placing IC 401 in a temperature-controlled platform and initializing a count i to "a". Therefore, during the first iteration of method 1300, the adjustment voltage generator 708a of the temperature sensor 400 is calibrated. Any suitable temperature-controlled platform can be used, which can maintain a specific temperature for calibrating IC 401.

[0136] In one embodiment, a single IC is loaded into a temperature-controlled platform for calibration. In another embodiment, a batch of ICs (such as ICs belonging to the same wafer) is loaded into a temperature-controlled platform for calibration. Although a batch of ICs can be loaded into a temperature-controlled platform for calibration, each IC is calibrated individually and independently of the other ICs, so that the calibration takes into account the process variations that may occur in various ICs (even ICs manufactured using the same process at the same time).

[0137] At step 1308, the temperature control platform is maintained at the temperature Ti corresponding to count i. In one example, the temperature control platform and IC 401 are maintained at this temperature Ti, such that internal components of IC 401 (such as the TDV generator 404) also reach and maintain this temperature. It should be noted that since count i is initialized to "a", the platform is maintained at... Figure 5 The can also correspond to Figure 8A and Figure 10B The temperature T(a,1) is below the temperature Ta.

[0138] At step 1312, the TDV generator 404 generates a temperature-dependent voltage TDV 416 while maintaining the temperature at temperature Ti. At step 1316, the adjustment voltage generator 708i generates an adjustment voltage Vtrim 710i based on the corresponding adjustment program code 444i and the bandgap voltage VBG 706. For example, referring to... Figure 12 During the first iteration of method 1300, the adjustment voltage generator 708a generates the adjustment voltage Vtrim 710a based on the corresponding adjustment program code 444a and the bandgap voltage VBG 706. The temperature measuring circuit 428 outputs a temperature signal T[1:B] indicating the temperature.

[0139] At step 1320, calibration adjustment code 444i is used such that when the temperature control platform is maintained at temperature Ti, the temperature signal T[1:B] indicates temperature Ti. This occurs when the adjustment voltage Vtrim 710i is substantially equal to TDV 416. For example, during the first iteration of method 1300 (e.g., when I = a), the temperature signal T[1:B] and / or COMP 424a (e.g., by...) are monitored. Figure 11A (Or generated by the circuit of 11B). The monitoring can be performed by a calibration system, which in one instance is external to IC401, but in another instance is internal to IC401. In one instance, the calibration system monitors the temperature signal T[1:B] based on COMP424a (and other COMP signals). In another instance, the calibration system directly monitors COMP424a. It should be noted that COMP424a is generated based on a comparison of the adjustment voltage Vtrim 710a (which is equal to Vref 416a) with TDV 412, as per the relevant provisions. Figure 11A and Figure 11BThe adjustment program code 444a is then calibrated (e.g., via a calibration system). For example, the adjustment program code 444a is adjusted (e.g., incrementally changed) to correspondingly increase the adjustment voltage Vtrim 710a until COMP 424a changes its state from bit 0 to bit 1. When COMP 424a changes its state, the temperature signal T[1:B] indicates the temperature as the plateau temperature Ti. This occurs when the adjustment voltage Vtrim 710a is substantially equal to TDV 416. Therefore, the calibration system monitors the temperature signal T[1:B], and when the temperature signal T[1:B] indicates the temperature as Ti, the calibration reads the corresponding adjustment program code 444a as the calibrated adjustment program code.

[0140] At step 1324, the calibration adjustment program code 444i is written into memory 440. At step 1328, a check is performed to determine whether count i = N (e.g., to check whether all adjustment voltage generators 708a, ..., adjustment voltage generator 708N have been calibrated). If "No" is found at step 1328 (e.g., count i is less than N), then count i is incremented by one at step 1332. For example, count i increments from a to b after the first iteration, from b to c after the second iteration, and so on, until the count reaches the total number of adjustment voltage generators N. Thus, for example, during the second iteration of method 1300, adjustment voltage generator 708b is calibrated, and so on. After all adjustment voltage generators have been calibrated, count i equals N at step 1328. Therefore, decision box 1328 outputs "Yes" and the calibration phase ends at step 1328 of method 1300. The operation phase of temperature sensor 400 has been discussed. Figures 4 to 12 This will be discussed further and also discussed below. Figure 13B The method 1360 is discussed in detail.

[0141] Figure 13B An example method 1360 for operating a temperature sensor 400 within an IC 401 is shown. Method 1360 includes generating (e.g., via a TDV generator 404) a temperature-dependent voltage TDV 416 at step 1364. The generated value of TDV 416 is based on the current operating temperature of the IC 401.

[0142] At step 1368, one or more program codes (such as calibration-adjusted program code 444i, whose calibration is related to...) Figure 13A The method described in 1300 is stored in a memory (such as memory 440).

[0143] At step 1372, multiple temperature reference voltages are generated based on one or more program codes. Examples of temperature reference voltages include those related to... Figure 4 , Figure 7 , Figure 9as well as Figure 10A The voltages discussed are Vref 416a, Vref 416b, ..., Vref 416M.

[0144] At step 1376, the individual temperature reference voltages of the plurality of temperature reference voltages are compared with TDV. For example, comparator circuit 420 (see Figure 4 , Figure 11A , Figure 11B This compares an individual temperature reference voltage from a plurality of temperature reference voltages with TDV. Examples of comparator circuits have been provided. Figure 11A and Figure 11B This will be discussed further. Multiple comparison signals are generated, such as COMP 424a, COMP 424b, ..., COMP 424M, as discussed regarding... Figure 4 , Figure 11A as well as Figure 11B The discussion.

[0145] At step 1380, one or more output signals are generated based on the comparison, wherein the output signals indicate the operating temperature of the integrated circuit. For example, Figure 4 The temperature measuring circuit 428 is shown to receive COMP 424 and generate a temperature signal T 432 indicating the operating temperature.

[0146] Figure 14 The circuit diagram for generating TDV 412 and bandgap voltage VBG 706. Therefore, Figure 14 The circuit is Figure 4 TDV generator 404 and Figure 7 The combination of the bandgap voltage generator 704. Figure 14The operational amplifier 1404 of the circuit receives voltages VA and VB and outputs signals for controlling transistors 1406 and 1408, which are, for example, metal-oxide-semiconductor field-effect transistors (MOSFETs). Transistor 1406 is coupled between the supply voltage VDD and a first output node 1410, where the first output node 1410 generates a bandgap voltage VBG 706. Output node 1410 is coupled to ground via resistor R1 and transistor Q1. Output node 1410 is also coupled to ground path resistors R2 and R3 and transistor Q2. In one embodiment, transistors Q1 and Q2 are bipolar junction transistors (BJTs). Each of transistors Q1 and Q2 is configured as a diode-connected transistor, where the corresponding base and corresponding collector of the transistor are coupled. Transistor 1408 is coupled between the supply voltage VDD and the second output node 1412, which outputs TDV 412. Output node 1412 is grounded via resistor R4. The resulting bandgap voltage VBG 706 is a fixed or constant voltage regardless of power supply variations, temperature changes, and circuit loads from the device; however, TDV 412 varies based on temperature, as discussed earlier herein. Figure 14 The diagram shows a pure example of a TDV generator 404 and a bandgap voltage generator 704, and any variation and / or different implementation of any part of these circuits is possible.

[0147] Although this disclosure has been made with reference to the preferred embodiments and examples detailed above, it should be understood that these examples are intended to be illustrative rather than restrictive. Various modifications and combinations will readily occur to those skilled in the art, and such modifications and combinations will fall within the spirit of this disclosure and the scope of the following claims.

Claims

1. An integrated circuit, characterized in that, include: A first circuit is used to generate a temperature-dependent voltage TDV that changes in response to a change in the operating temperature of the integrated circuit. Memory, used to store one or more program codes; A second circuit is configured to generate a plurality of temperature reference voltages based on one or more program codes, wherein the temperature reference voltages change in response to a change in the operating temperature of the integrated circuit, and the change in the TDV in response to the change in the operating temperature is different from the change in the plurality of temperature reference voltages in response to the change in the operating temperature. as well as One or more comparator circuits are used to compare an individual temperature reference voltage of the plurality of temperature reference voltages with the TDV to generate one or more output signals indicating the operating temperature of the integrated circuit; The second circuit includes: a first voltage generator circuit for receiving a bandgap voltage and a first program code of one or more program codes, and generating a first adjustment voltage; a second voltage generator circuit for receiving a bandgap voltage and a second program code of one or more program codes, and generating a second adjustment voltage; and a voltage divider for generating a plurality of temperature reference voltages based on the first adjustment voltage and the second adjustment voltage. The first voltage generator circuit includes a first operational amplifier having a first terminal, a second terminal and an output terminal, wherein the first terminal of the first operational amplifier is used to receive the first adjustment voltage. The second voltage generator circuit includes a second operational amplifier having a first terminal, a second terminal and an output terminal, wherein the first terminal of the second operational amplifier is used to receive the second adjustment voltage; The voltage divider further includes: The first node is coupled to the output terminal of the first operational amplifier. The second node is coupled to the output terminal of the second operational amplifier and the second terminal. The third node is coupled to the second terminal of the first operational amplifier. as well as At least a first resistor and a second resistor are coupled between the first node and the second node, wherein the third node is between the first resistor and the second resistor, wherein the first temperature reference voltage of the plurality of temperature reference voltages is generated at the first node, the second temperature reference voltage of the plurality of temperature reference voltages is generated at the second node, and the third temperature reference voltage of the plurality of temperature reference voltages is generated at the third node.

2. The integrated circuit according to claim 1, characterized in that, The TDV changes approximately linearly with temperature within a temperature range defined by the first temperature and the second temperature.

3. The integrated circuit according to claim 1, characterized in that: The first temperature reference voltage is compared with the TDV to detect the first operating temperature of the integrated circuit; The second temperature reference voltage is compared with the TDV to detect the second operating temperature of the integrated circuit; and The third temperature reference voltage is compared with the TDV to detect a third operating temperature of the integrated circuit, which is between the first temperature and the second temperature.

4. The integrated circuit according to claim 1, characterized in that, The one or more comparator circuits include: A plurality of comparator circuits, wherein each of the plurality of comparator circuits is configured to compare a corresponding temperature reference voltage of the plurality of temperature reference voltages with the TDV.

5. The integrated circuit according to claim 1, characterized in that, The one or more comparator circuits include: A comparator circuit is used to compare a first temperature reference voltage of the plurality of temperature reference voltages with the TDV, and subsequently compare a second temperature reference voltage of the plurality of temperature reference voltages with the TDV.

6. The integrated circuit according to claim 1, characterized in that, Also includes: A third circuit is configured to receive the outputs of the one or more comparator circuits and generate a temperature signal based on the outputs of the one or more comparator circuits.

7. The integrated circuit according to claim 1, characterized in that: The memory is a first memory including one or more temporary registers; and The integrated circuit also includes Second memory, and A third circuit is used to generate an operating voltage for the second memory, based at least in part on an indication of the operating temperature of the integrated circuit.

8. The integrated circuit according to claim 1, characterized in that, Also includes: Bandgap voltage generator, used to generate bandgap voltage. The second circuit is used to generate the plurality of temperature reference voltages based on the bandgap voltage.

9. The integrated circuit according to claim 1, characterized in that, The TDV has a positive temperature coefficient within the operating temperature range of the integrated circuit, and wherein the plurality of temperature reference voltages are temperatures independent of the operating temperature range of the integrated circuit.

10. An integrated circuit, characterized in that, include: A first voltage generator is used to generate a first voltage that changes with temperature; A reference voltage generator circuit is used to generate multiple temperature reference voltages based on one or more program codes, the multiple temperature reference voltages being temperatures independent of the operating temperature range of the integrated circuit; A comparator circuit is used to compare the plurality of temperature reference voltages with the first voltage; as well as A logic circuit that generates a digital signal indicating temperature in response to the comparator circuit; The reference voltage generator includes a bandgap reference generator for generating a bandgap reference voltage, a memory for storing one or more adjustment program codes, and a circuit for generating multiple temperature reference voltages in response to the bandgap voltage and one or more program codes. The circuit for generating multiple temperature reference voltages includes: a first voltage generator circuit for receiving a bandgap voltage and a first program code of one or more adjustment program codes, and generating a first adjustment voltage; a second voltage generator circuit for receiving a bandgap voltage and a second program code of one or more adjustment program codes, and generating a second adjustment voltage; and a voltage divider for generating multiple temperature reference voltages based on the first adjustment voltage and the second adjustment voltage. The first voltage generator circuit includes a first operational amplifier having a first terminal, a second terminal and an output terminal, wherein the first terminal of the first operational amplifier is used to receive the first adjustment voltage. The second voltage generator circuit includes a second operational amplifier having a first terminal, a second terminal and an output terminal, wherein the first terminal of the second operational amplifier is used to receive the second adjustment voltage; The voltage divider further includes: The first node is coupled to the output terminal of the first operational amplifier. The second node is coupled to the output terminal of the second operational amplifier and the second terminal. The third node is coupled to the second terminal of the first operational amplifier. as well as At least a first resistor and a second resistor are coupled between the first node and the second node, wherein the third node is located between the first resistor and the second resistor. The first temperature reference voltage of the plurality of temperature reference voltages is generated at the first node, the second temperature reference voltage of the plurality of temperature reference voltages is generated at the second node, and the third temperature reference voltage of the plurality of temperature reference voltages is generated at the third node.

11. The integrated circuit according to claim 10, characterized in that, Also includes: Memory array; as well as One or more circuits are used to generate one or more operating voltages for the memory array, at least in part based on the digital signal.

12. A method of operating a temperature sensor for an integrated circuit according to any one of claims 1 to 9, characterized in that, include: Generates a temperature-dependent voltage (TDV) that changes in response to variations in the operating temperature of the integrated circuit; Store one or more program codes in memory; Multiple temperature reference voltages are generated based on the one or more program codes, wherein the change of the TDV in response to the change of the operating temperature is different from the change of the multiple temperature reference voltages in response to the change of the operating temperature. as well as Individual temperature reference voltages of the plurality of temperature reference voltages are compared with the TDV to generate one or more output signals indicating the operating temperature of the integrated circuit; The generation of the plurality of temperature reference voltages includes: generating a first adjustment voltage based on the bandgap voltage and a first program code of the one or more program codes; generating a second adjustment voltage based on the bandgap voltage and a second program code of the one or more program codes; and generating a plurality of temperature reference voltages based on the first adjustment voltage and the second adjustment voltage.

13. The method according to claim 12, characterized in that, The adjustment voltage is a first adjustment voltage, and the generation of the plurality of temperature reference voltages includes: A second adjustment voltage is generated based on the bandgap voltage and a second program code of one or more program codes; The first adjusted voltage and the second adjusted voltage are received through a voltage divider; and The plurality of temperature reference voltages are output through the voltage divider based on the first adjustment voltage and the second adjustment voltage.

14. The method according to claim 12, characterized in that, Comparing an individual temperature reference voltage of the plurality of temperature reference voltages with the TDV includes: A first temperature reference voltage of the plurality of temperature reference voltages is compared with the TDV to detect a first operating temperature of the integrated circuit; The second temperature reference voltage of the plurality of temperature reference voltages is compared with the TDV to detect the second operating temperature of the integrated circuit; and The third temperature reference voltage of the plurality of temperature reference voltages is compared with the TDV to detect the third operating temperature of the integrated circuit.

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