Substrate processing method and substrate processing apparatus

Abstract

Provided is a substrate processing method and a substrate processing apparatus capable of inhibiting contamination of a main surface of a substrate having a coating film formed on the main surface. The substrate processing method includes: a substrate holding step of holding a substrate having a first main surface and a second main surface opposite to the first main surface in a horizontal state; a coating film forming step of forming a sublimative coating film covering the first main surface by supplying a coating agent to the first main surface; and a coating film cleaning step of cleaning a surface of the coating film.

Description

[0001] This application is a divisional application of the application filed on June 29, 2018, with application number 201810722348.X and title "Substrate Processing Method and Substrate Processing Apparatus". Technical Field

[0002] This invention relates to a substrate processing method and a substrate processing apparatus for processing substrates. Substrates that are the objects of processing include, for example, semiconductor wafers, substrates for liquid crystal display devices, substrates for FPD (Flat Panel Display) devices such as organic EL (Electroluminescence) display devices, substrates for optical discs, substrates for magnetic disks, substrates for optical discs, substrates for photomasks, ceramic substrates, substrates for solar cells, etc. Background Technology

[0003] In substrate processing using a single-sheet substrate processing apparatus, substrates are processed one by one. Specifically, the substrate is held almost horizontally by a rotating chuck. Then, the main surface of the substrate is cleaned with a chemical solution and rinsed with a rinsing solution. Then, a rotary drying process is performed to remove the rinsing solution from the substrate (for example, see Japanese Patent Application Laid-Open No. 2000-156362).

[0004] By treating the main surface of a substrate with a chemical solution, a metal pattern is exposed on the main surface of the substrate. If the substrate is left exposed for an extended period, there is a concern that the metal pattern may oxidize. Therefore, Japanese Patent Application Publication Nos. 2016-197762 and 2015-149410 disclose a substrate processing method for forming an outer coating film covering the main surface of the substrate. This method can suppress oxidation of the metal pattern. The outer coating film is removed during further processing of the main surface of the substrate.

[0005] Japanese Patent Application Publication No. 2016-197762 discloses a method for cleaning the main surface of a substrate with a rinsing solution after removing the outer coating film with a removal solution. On the other hand, Japanese Patent Application Publication No. 2015-149410 (fourth embodiment) discloses a method for removing the outer coating film by sublimation.

[0006] In the substrate processing described in Japanese Patent Application Publication No. 2016-197762, there is a concern that when the rinsing liquid is shaken off, it cannot remove the rinsing liquid that has entered between the metal patterns formed on the main surface of the substrate. Therefore, there is a concern that poor drying may occur. Since the liquid surface (the interface between air and liquid) of the rinsing liquid that has entered the interior of the metal pattern is formed within the metal pattern, the surface tension of the liquid acts at the contact point between the liquid surface and the metal pattern. There is a concern that the metal pattern may collapse due to this surface tension.

[0007] In the substrate processing described in Japanese Patent Application Publication No. 2015-149410 (fourth embodiment), unlike the substrate processing described in Japanese Patent Application Publication No. 2016-197762, no liquid is used in the removal of the outer coating film. Therefore, it is possible to suppress the collapse of the metal pattern. However, if the outer coating film is sublimated when its surface is contaminated, there is a concern that dirt (particles) adhering to the surface of the outer coating film may remain on the main surface of the substrate. Summary of the Invention

[0008] Therefore, one object of the present invention is to provide a substrate processing method and substrate processing apparatus that can suppress contamination of the main surface of a substrate in a structure in which a coating is formed on the main surface of the substrate.

[0009] An embodiment of the present invention provides a substrate processing method, comprising: a substrate holding step, wherein a substrate having a first main surface and a second main surface opposite to the first main surface is held horizontally; a coating film forming step, wherein a sublimable coating film covering the first main surface is formed by supplying a coating agent to the first main surface; and a coating film cleaning step, wherein the surface of the coating film is cleaned.

[0010] According to this method, a sublimable coating film is formed during the coating film formation process. Therefore, the coating film can be removed from the first main surface without using a liquid for removing the coating film from the first main surface. Furthermore, the surface of the sublimable coating film is cleaned during the coating film cleaning process. Therefore, even if the coating film sublimates after the coating film cleaning process, it is possible to suppress the residue of contaminants adhering to the surface of the coating film on the first main surface. Thus, it is possible to prevent contamination of the first main surface of the substrate.

[0011] According to one embodiment of the present invention, the substrate processing method further includes a second main surface cleaning step, wherein the second main surface is cleaned after the coating film formation step is completed. Furthermore, the coating film cleaning step begins after the second main surface cleaning step is completed or is performed in parallel with the second main surface cleaning step.

[0012] According to this method, the second main surface is cleaned in the second main surface cleaning process. However, there are concerns that the cleaning fluid falling onto the second main surface may float around the periphery of the substrate and adhere to the surface of the coated film. There are also concerns that the cleaning fluid falling onto the second main surface may scatter towards components disposed around the periphery of the substrate, bounce back from these components, and adhere to the surface of the coated film. Furthermore, the cleaning fluid falling onto the second main surface may circumvent the first main surface and adhere to the surface of the coated film. Sometimes, the cleaning fluid falling onto the second main surface contains contaminants such as particles. The cleaning fluid bouncing back from components disposed around the periphery of the substrate is more likely to contain contaminants such as particles.

[0013] According to this substrate processing method, the coating cleaning process begins after the second main surface cleaning process or is performed in parallel with the second main surface cleaning process. Therefore, even if the cleaning solution adheres to the surface of the coating during the second main surface cleaning process, the surface of the coating can be cleaned during the coating cleaning process. Thus, in the substrate processing method that cleans the second main surface through the second main surface cleaning process, contamination of the first main surface can be suppressed.

[0014] According to one embodiment of the present invention, the coating cleaning process includes a first cleaning process, which begins after the second main surface cleaning process and cleans the surface of the coating. Here, since it takes a predetermined time for the cleaning fluid that has landed on the second main surface to reach the surface of the coating, the cleaning fluid may adhere to the surface of the coating during the period from the end of the second main surface cleaning process until the predetermined time has elapsed. If the cleaning of the coating surface, as in this substrate processing method, begins after the second main surface cleaning process, the cleaning fluid adhering to the surface of the coating caused by the second main surface cleaning process can be reliably removed. Furthermore, even if dirt adheres to the surface of the coating before the start of the second main surface cleaning process, this dirt can be removed together with the cleaning fluid adhering to the surface of the coating caused by the second main surface cleaning process.

[0015] According to one embodiment of the present invention, the coating cleaning process includes a second cleaning process, which cleans the surface of the coating in parallel with the second main surface cleaning process.

[0016] Therefore, cleaning fluid adhering to the surface of the coated film caused by the second main surface cleaning process can be removed immediately. Even if dirt is already adhering to the surface of the coated film before the second main surface cleaning process begins, the dirt removal can begin before the cleaning fluid falling onto the second main surface reaches the surface of the coated film. Furthermore, the time until the end of the coated film cleaning process can be shortened. Therefore, the number of substrates that can be processed per unit time can be increased. That is, processing capacity is improved. In this way, processing capacity is improved while suppressing contamination of the first main surface.

[0017] Since it takes a predetermined time for the cleaning fluid to reach the surface of the coated film after the second main surface cleaning process, the cleaning fluid may adhere to the surface of the coated film during the period from the end of the second main surface cleaning process to the elapsed time. Therefore, in one embodiment of the present invention, the second cleaning process is terminated after the second main surface cleaning process is completed. This further suppresses the adhesion of contaminated cleaning fluid to the surface of the coated film after the coated film cleaning process is completed.

[0018] According to one embodiment of the present invention, the substrate processing method further includes a protective liquid supply step, wherein the protective liquid supply step supplies a protective liquid to the surface of the coated film to protect the surface of the coated film. Furthermore, the protective liquid supply step is performed in parallel with the second main surface cleaning step at the start of the coated film cleaning step. Therefore, the protective liquid can be used to prevent contaminated cleaning liquid from adhering to the surface of the coated film. Therefore, contamination of the first main surface can be prevented.

[0019] According to one embodiment of the present invention, the coating cleaning process includes the step of cleaning the surface of the coating by supplying a cleaning liquid to the surface of the coating. In the coating cleaning process, the cleaning liquid supplied to the surface of the coating diffuses on the surface of the coating. Therefore, the cleaning time for the surface of the coating can be reduced.

[0020] According to one embodiment of the present invention, the coating cleaning process includes a process of removing the surface layer of the coating. Here, since the particles are firmly attached to the surface of the coating, it may be difficult to remove the particles from the surface of the coating. Even in this case, the particles can be removed together with the surface layer of the coating during the coating cleaning process. Therefore, the surface of the coating can be reliably cleaned.

[0021] The coating film formation process includes a curing process, in which the coating agent is supplied to the first main surface, and the coating agent is cured by heating the substrate to form the coating film. Therefore, the coating film can be reliably formed.

[0022] Here, sometimes the coating agent supplied to the first main surface wraps around the periphery of the first main surface to the second main surface and adheres to the periphery of the second main surface. According to one embodiment of the invention, the substrate processing method further includes a periphery cleaning step, which cleans the periphery of the second main surface before the curing step begins. Therefore, it is possible to suppress coating agent contamination of the second main surface.

[0023] According to one embodiment of the present invention, the substrate processing method further includes a sublimation step, wherein the sublimation step sublimates the coated film after the coated film cleaning step. Therefore, the coated film sublimates, exposing the first main surface. Since the surface of the coated film is cleaned in the coated film cleaning step, it is possible to prevent dirt adhering to the surface of the coated film from remaining on the first main surface after the coated film sublimates. That is, it is possible to prevent contamination of the first main surface.

[0024] According to one embodiment of the present invention, a metal pattern is formed on the first main surface. Therefore, according to the substrate processing method of forming a sublimation coating on the first main surface and cleaning the surface of the coating, it is possible to suppress the collapse of the metal pattern and suppress contamination of the first main surface.

[0025] In one embodiment of the present invention, a substrate processing apparatus is provided, comprising: a substrate holding unit for holding a substrate having a first main surface and a second main surface opposite to the first main surface in a horizontal position; a coating agent supply unit for supplying a coating agent capable of forming a sublimable coating film covering the first main surface to the first main surface; a coating film cleaning unit for cleaning the surface of the coating film; and a controller for controlling the substrate holding unit, the coating agent supply unit, and the coating film cleaning unit; the controller is programmed to perform a substrate holding process, a coating film forming process, and a coating film cleaning process, wherein the substrate holding process holds the substrate in a horizontal position by means of the substrate holding unit, the coating film forming process forms the coating film by supplying the coating agent from the coating agent supply unit to the first main surface, and the coating film cleaning process cleans the surface of the coating film by means of the coating film cleaning unit.

[0026] According to this apparatus, a sublimable coating film is formed during the coating film formation process. Therefore, the coating film can be removed from the first main surface without using a liquid for removing the coating film from the first main surface. Furthermore, the surface of the sublimable coating film is cleaned during the coating film cleaning process. Therefore, even if the coating film sublimates after the coating film cleaning process, it is possible to suppress the residue of contaminants adhering to the surface of the coating film on the first main surface. Thus, it is possible to prevent contamination of the first main surface of the substrate.

[0027] According to one embodiment of the present invention, the substrate processing apparatus further includes a second main surface cleaning unit, which cleans the second main surface. Furthermore, the controller is programmed to also perform a second main surface cleaning process, which involves cleaning the second main surface by the second main surface cleaning unit after the coating film formation process. Moreover, the controller is programmed to either start the coating film cleaning process after the second main surface cleaning process is completed or to perform the coating film cleaning process in parallel with the second main surface cleaning process.

[0028] According to this apparatus, the second main surface is cleaned in the second main surface cleaning process. However, in the second main surface cleaning process, there is a concern that the cleaning fluid falling onto the second main surface may float around the periphery of the substrate and adhere to the surface of the coated film. There is also a concern that the cleaning fluid falling onto the second main surface may scatter towards the components disposed around the periphery of the substrate, bounce back from the components, and adhere to the surface of the coated film. Furthermore, there is a concern that the cleaning fluid falling onto the second main surface may circumvent the first main surface and adhere to the surface of the coated film. Sometimes, the cleaning fluid falling onto the second main surface may contain contaminants such as particles. The cleaning fluid bouncing back from the components of the substrate processing apparatus is more likely to contain contaminants such as particles.

[0029] According to this substrate processing apparatus, the coating cleaning process begins after the second main surface cleaning process or is performed in parallel with the second main surface cleaning process. Therefore, even if cleaning fluid adheres to the surface of the coating caused by the second main surface cleaning process, the surface of the coating can be cleaned during the coating cleaning process. Therefore, in a substrate processing apparatus that cleans the second main surface through the second main surface cleaning process, contamination of the first main surface can be suppressed.

[0030] According to one embodiment of the present invention, the controller is programmed to perform a first cleaning step in the coating cleaning process, which begins after the second main surface cleaning step is completed, by the coating cleaning unit cleaning the coating. Here, since it takes a predetermined time for the cleaning fluid that has landed on the second main surface to reach the surface of the coating, the cleaning fluid may adhere to the surface of the coating during the period from the end of the second main surface cleaning step until the predetermined time has elapsed. If the coating surface cleaning is performed after the second main surface cleaning step, as in this substrate processing apparatus, the cleaning fluid adhering to the coating surface caused by the second main surface cleaning step can be reliably removed. Furthermore, even if dirt adheres to the surface of the coating before the start of the second main surface cleaning step, this dirt can be removed together with the cleaning fluid adhering to the coating surface caused by the second main surface cleaning step.

[0031] According to one embodiment of the present invention, the controller is programmed to perform a second cleaning process in the coating cleaning process, the second cleaning process being parallel to the second main surface cleaning process, and the surface of the coating is cleaned by the coating cleaning unit.

[0032] Therefore, cleaning fluid adhering to the surface of the coated film caused by the second main surface cleaning process can be removed immediately. Even if dirt is already adhering to the surface of the coated film before the second main surface cleaning process begins, removal of that dirt can begin until the cleaning fluid that has fallen onto the second main surface reaches the surface of the coated film. Furthermore, the time until the end of the coated film cleaning process can be shortened. Therefore, the number of substrates that can be processed per unit time can be increased. That is, processing capacity is improved. In this way, processing capacity is improved while suppressing contamination of the first main surface.

[0033] As described above, since a predetermined time is required for the cleaning fluid to reach the surface of the coated membrane after the second main surface cleaning process, the cleaning fluid may adhere to the surface of the coated membrane during the period from the end of the second main surface cleaning process to the elapsed time. Therefore, according to one embodiment of the present invention, the controller is programmed to end the second cleaning process after the second main surface cleaning process is completed. Thus, it is possible to further suppress the adhesion of contaminated cleaning fluid to the surface of the coated membrane after the coated membrane cleaning process is completed.

[0034] According to one embodiment of the present invention, the substrate processing apparatus further includes a protective liquid supply unit, which supplies a protective liquid to the first main surface to protect the surface of the coated film. Furthermore, the controller is programmed to execute a protective liquid supply process, which runs parallel to the second main surface cleaning process before the start of the coated film cleaning process, supplying the protective liquid from the protective liquid supply unit to the surface of the coated film. Therefore, the protective liquid can be used to prevent contaminated cleaning liquid from adhering to the surface of the coated film. Thus, contamination of the first main surface can be prevented.

[0035] According to one embodiment of the present invention, the coating cleaning unit includes a cleaning fluid supply unit that supplies cleaning fluid to the first main surface. Furthermore, the controller is programmed to perform, in the coating cleaning process, a step of cleaning the surface of the coating by supplying cleaning fluid from the cleaning fluid supply unit to the first main surface.

[0036] Therefore, the cleaning solution supplied to the surface of the coated film during the coating cleaning process diffuses on the surface of the coated film. As a result, the cleaning time for the surface of the coated film can be reduced.

[0037] According to one embodiment of the invention, the controller is programmed to perform a process of removing the surface layer of the coated film during the coated film cleaning process. Here, since particles are firmly attached to the surface of the coated film, it may be difficult to remove particles from the surface of the coated film. Even in this case, particles can be removed together with the surface layer of the coated film during the coated film cleaning process. Therefore, the surface of the coated film can be reliably cleaned.

[0038] According to one embodiment of the present invention, the substrate processing apparatus further includes a substrate heating unit for heating the substrate. Furthermore, the controller is programmed to perform a curing step during the coating film formation process, wherein the curing step, after supplying the coating agent to the first main surface, heats the substrate via the substrate heating unit to cure the coating film. Therefore, a coating film can be reliably formed.

[0039] Here, the coating agent supplied to the first main surface sometimes wraps around the periphery of the first main surface to the second main surface and adheres to the periphery of the second main surface. According to one embodiment of the invention, the substrate processing apparatus further includes a periphery cleaning unit that cleans the periphery of the second main surface. Furthermore, the controller is programmed to perform a periphery cleaning process, which cleans the periphery of the second main surface by the periphery cleaning unit before the curing process begins. Therefore, coating agent contamination of the second main surface can be suppressed.

[0040] According to one embodiment of the present invention, the substrate processing apparatus further includes a sublimation unit that sublimates the coated film. Furthermore, the controller is programmed to perform a sublimation process, which, after the coated film cleaning process, sublimates the coated film through the sublimation unit. Therefore, the coated film sublimates and exposes the first main surface. Since the surface of the coated film is cleaned in the coated film cleaning process, it is possible to prevent dirt adhering to the surface of the coated film from remaining on the first main surface after the coated film sublimates. That is, it is possible to prevent contamination of the first main surface.

[0041] According to one embodiment of the present invention, a metallic pattern is formed on the first main surface. Therefore, if a sublimation coating is formed on the first main surface, a substrate processing apparatus that cleans the surface of the coating can suppress the collapse of the metallic pattern and prevent contamination of the first main surface.

[0042] The described or other objects, features, and effects of the present invention will become clear by referring to the accompanying drawings and the embodiments described below. Attached Figure Description

[0043] Figure 1A This is a top view illustrating the structure of the substrate processing apparatus according to the first embodiment of the present invention.

[0044] Figure 1B It is a illustrative perspective view used to explain the structure of the substrate processing apparatus.

[0045] Figure 2 This is an illustrative cross-sectional view used to explain an example of the structure of the first liquid processing unit included in the substrate processing apparatus.

[0046] Figure 3 This is an illustrative cross-sectional view used to explain an example of the structure of the second liquid processing unit included in the substrate processing apparatus.

[0047] Figure 4 This is an illustrative cross-sectional view used to explain an example of the structure of the first heating unit included in the substrate processing apparatus.

[0048] Figure 5This is an illustrative cross-sectional view used to explain an example of the structure of the second heating unit included in the substrate processing apparatus.

[0049] Figure 6 This is a block diagram illustrating the electrical structure of the main parts of the substrate processing apparatus.

[0050] Figure 7 This is a flowchart illustrating a first example of substrate processing using the substrate processing apparatus.

[0051] Figures 8A-8H It is a illustrative cross-sectional view used to explain the substrate processing.

[0052] Figure 9A This is a schematic cross-sectional view of the periphery of the first main surface of the substrate just before the coating and cleaning process begins in the substrate processing.

[0053] Figure 9B This is a schematic cross-sectional view of the periphery of the first main surface of the substrate immediately after the coating and cleaning process is completed.

[0054] Figure 10 This is an illustrative cross-sectional view used to illustrate a second example of substrate processing using the substrate processing apparatus.

[0055] Figure 11A and Figure 11B This is an illustrative cross-sectional view used to illustrate a third example of substrate processing using the substrate processing apparatus.

[0056] Figure 12A and Figure 12B This is an illustrative cross-sectional view used to explain a fourth example of substrate processing using the substrate processing apparatus.

[0057] Figure 13 This is an illustrative cross-sectional view used to explain an example of the structure of the second liquid processing unit included in the substrate processing apparatus of the second embodiment.

[0058] Figure 14 This is an illustrative cross-sectional view used to explain an example of the structure of the second liquid processing unit included in the substrate processing apparatus of the third embodiment.

[0059] Figure 15 This is a illustrative perspective view used to explain the structure of the substrate processing apparatus according to the fourth embodiment. Detailed Implementation

[0060] <First Implementation>

[0061] Figure 1A This is a top view illustrating the structure of the substrate processing apparatus 1 according to the first embodiment of the present invention. Figure 1BIt is a illustrative perspective view used to explain the structure of the substrate processing apparatus 1.

[0062] Reference Figure 1A The substrate processing apparatus 1 is a single-sheet apparatus that performs various processes such as cleaning and etching on substrates W, such as semiconductor wafers, one by one. The substrate W processed in the substrate processing apparatus 1 is, for example, a substrate with a metal pattern formed on its main surface. Specifically, the substrate W has a first main surface W1 and a second main surface W2, which is the opposite side of the first main surface W1 (see reference 1). Figure 1B A metallic pattern is formed on the first main surface W1, but no metallic pattern is formed on the second main surface W2.

[0063] The substrate processing apparatus 1 includes multiple (four in this embodiment) processing towers 2A to 2D for treating the substrate W with processing liquids such as chemical solutions and rinsing solutions. The multiple processing towers 2A to 2D are collectively referred to as processing towers 2.

[0064] The substrate processing apparatus 1 further includes: a loading port LP for holding a container C that holds multiple substrates W processed in the processing tower 2; transport robots IR and CR for transporting the substrates W between the loading port LP and the processing tower 2; and a controller 3 for controlling the substrate processing apparatus 1.

[0065] The substrate processing apparatus 1 also includes a transport path 5 extending horizontally. The transport path 5 extends linearly from the transport robot IR toward the transport robot CR. The transport robot IR transports the substrate W between the container C and the transport robot CR. The transport robot CR transports the substrate W between the transport robot IR and the processing tower 2.

[0066] Multiple processing towers 2 are symmetrically positioned across the transport path 5. The multiple processing towers 2 are arranged on both sides of the transport path 5 along the direction of extension (extension direction X) of the transport path 5. In this embodiment, two processing towers 2 are respectively arranged on each side of the transport path 5.

[0067] Two processing towers 2A to 2D closest to the transport robot IR are designated as the first processing tower 2A and the second processing tower 2B, respectively. The first processing tower 2A and the second processing tower 2B are positioned opposite each other across the transport path 5. Two processing towers 2A to 2D furthest from the transport robot IR are designated as the third processing tower 2C and the fourth processing tower 2D, respectively. The third processing tower 2C and the fourth processing tower 2D are positioned opposite each other across the transport path 5. The first processing tower 2A and the third processing tower 2C are arranged along the extension direction X. The second processing tower 2B and the fourth processing tower 2D are also arranged along the extension direction X.

[0068] Each processing tower 2 is equipped with a unit for treating the substrate W with a processing liquid and a unit for heating the substrate W. These will be described in detail later. Examples of processing liquids include chemical solutions, rinsing solutions, cleaning solutions, coating agents, and removal solutions.

[0069] Specifically, the first processing tower 2A includes first liquid processing units M11 and M12 and a first heating unit D11. The second processing tower 2B includes first liquid processing units M13 and M14 and a first heating unit D12. The third processing tower 2C includes second liquid processing units M21 and M22 and a second heating unit D21. The fourth processing tower 2D includes second liquid processing units M23 and M24 and a second heating unit D22.

[0070] Multiple first liquid processing units M11 to M14 have, for example, the same structure. When referring collectively to the multiple first liquid processing units M11 to M14, they are called first liquid processing unit M1. Multiple first heating units D11 and D12 have, for example, the same structure. When referring collectively to the multiple first heating units D11 and D12, they are called first heating unit D1. Multiple second liquid processing units M21 to M24 have, for example, the same structure. When referring collectively to the multiple second liquid processing units M21 to M24, they are called second liquid processing unit M2. Multiple second heating units D21 and D22 have, for example, the same structure. When referring collectively to the multiple second heating units D21 and D22, they are called second heating unit D2.

[0071] Reference Figure 1B In the first processing tower 2A, the first liquid processing unit M11, the first heating unit D11, and the first liquid processing unit M12 are stacked vertically. In the first processing tower 2A, the first liquid processing unit M11 is located at the bottom, and the first liquid processing unit M12 is located at the top. In the second processing tower 2B, the first liquid processing unit M13, the first heating unit D12, and the first liquid processing unit M14 are stacked vertically. In the second processing tower 2B, the first liquid processing unit M13 is located at the bottom, and the first liquid processing unit M14 is located at the top.

[0072] In the third processing tower 2C, the second liquid processing unit M21, the second heating unit D21, and the second liquid processing unit M22 are stacked vertically. In the third processing tower 2C, the second liquid processing unit M21 is located at the bottom, and the second liquid processing unit M22 is located at the top. In the fourth processing tower 2D, the second liquid processing unit M23, the second heating unit D22, and the second liquid processing unit M24 are stacked vertically. In the fourth processing tower 2D, the second liquid processing unit M23 is located at the bottom, and the second liquid processing unit M24 is located at the top.

[0073] Figure 2This is a schematic cross-sectional view used to illustrate an example of the structure of the first liquid treatment unit M1.

[0074] The first liquid processing unit M1 includes: a chamber R1; a first rotary chuck 10 for holding the substrate W horizontally and enabling the substrate W to rotate; a plurality of cups 11 and 12 (first cup 11 and second cup 12) surrounding the first rotary chuck 10; and a plurality of baffles 13 and 14 (first baffle 13 and second baffle 14) for receiving the processing liquid discharged from the substrate W to the outside of the substrate W. The first rotary chuck 10, the plurality of cups 11 and 12, and the plurality of baffles 13 and 14 are disposed within the chamber R1.

[0075] The first liquid treatment unit M1 also includes a drug supply unit 15, a first rinsing liquid supply unit 16, a coating agent supply unit 17, a removal liquid supply unit 18, and an organic solvent supply unit 19.

[0076] The chemical supply unit 15 supplies a chemical solution such as hydrofluoric acid to the upper surface of the substrate W. The first rinsing solution supply unit 16 supplies a rinsing solution such as deionized water (DIW) to the upper surface of the substrate W. The coating agent supply unit 17 supplies a coating agent to the upper surface of the substrate W. The removal solution supply unit 18 supplies a removal solution to the periphery of the lower surface of the substrate W to remove the coating agent adhering to the substrate W. The organic solvent supply unit 19 supplies an organic solvent such as isopropyl alcohol (IPA) to the upper surface of the substrate W.

[0077] The first rotary chuck 10 includes a rotary base 21, a rotary shaft 22, and an electric motor 23 that provides rotational force to the rotary shaft 22. The rotary shaft 22 is a hollow shaft. The rotary shaft 22 extends vertically along the rotation axis A1. The rotary base 21 is attached to the upper end of the rotary shaft 22. The rotary base 21 has a disc-shaped circular plate portion 21A extending horizontally and a cylindrical portion 21B externally fitted to the upper end of the rotary shaft 22. The diameter of the upper surface of the circular plate portion 21A is smaller than the diameter of the base plate W.

[0078] The first rotary chuck 10 also includes a suction unit 27 for attracting the substrate W disposed on the upper surface of the rotary base 21 in order to hold the substrate W on the rotary base 21. A suction path 25 is formed through the rotary base 21 and the rotation shaft 22. The suction path 25 has a suction port 24 exposed from the center of the upper surface of the rotary base 21. The suction path 25 is connected to a suction tube 26. The suction tube 26 is connected to a suction unit 27 such as a vacuum pump. A suction valve 28 for opening and closing the path is installed on the suction tube 26. The first rotary chuck 10 is an example of a substrate holding unit for holding the substrate W horizontally.

[0079] Electric motor 23 provides rotational force to rotating shaft 22. By rotating rotating shaft 22 using electric motor 23, rotating base 21 is rotated. This causes substrate W to rotate about rotation axis A1. Hereinafter, the inner radial side of substrate W's rotation will be referred to as "inner radial side," and the outer radial side of substrate W's rotation will be referred to as "outer radial side." Electric motor 23 is an example of a rotating unit that causes substrate W to rotate about rotation axis A1.

[0080] An entrance / exit 31 is formed on the side wall 30 of the chamber R1 for the transport robot CR to move the substrate W in and out. A gate 32 for opening and closing the entrance / exit 31 is provided in the chamber R1. The gate 32 is driven to open and close by a gate opening / closing unit 33.

[0081] Each cup 11, 12 has an upward-opening annular groove. Each cup 11, 12 surrounds the first rotating chuck 10. The second cup 12 is located radially outward compared to the first cup 11. The grooves of each cup 11, 12 are connected to a recovery pipe (not shown) or a discharge pipe (not shown).

[0082] Baffles 13 and 14 surround the first rotary chuck 10 when viewed from above. The second baffle 14 is radially outward compared to the first baffle 13. The first baffle 13 includes: a first cylindrical portion 13A, which is positioned above the first cup 11 and surrounds the first rotary chuck 10; and a first extension portion 13B, which extends radially inward and upward from the first cylindrical portion 13A. The second baffle 14 includes: a second cylindrical portion 14A, which is positioned above the second cup 12 and surrounds the first rotary chuck 10; and a second extension portion 14B, which extends radially inward and upward from the second cylindrical portion 14A.

[0083] The processing liquid discharged from the substrate W is received by baffles 13 and 14. The processing liquid received by the first baffle 13 is guided to the first cup 11 along the first cylindrical portion 13A. The processing liquid received by the second baffle 14 is guided to the second cup 12 along the second cylindrical portion 14A. The processing liquid guided to the bottom of each cup 11 and 12 is recovered or discarded through a recovery pipe or a discharge pipe.

[0084] The first baffle 13 moves up and down between an upper position and a lower position via a first baffle lifting unit 36. The second baffle 14 moves up and down between an upper position and a lower position via a second baffle lifting unit 37. When the first baffle 13 is in the upper position, its upper end is positioned above the substrate W. When the first baffle 13 is in the lower position, its upper end is positioned below the substrate W. When the second baffle 14 is in the upper position, its upper end is positioned above the substrate W. When the second baffle 14 is in the lower position, its upper end is positioned below the substrate W.

[0085] The first extension 13B of the first baffle 13 faces the second extension 14B of the second baffle 14 from below. Therefore, the second baffle 14 cannot move to a position lower than the first baffle 13. Therefore, when the first baffle 13 is in the upper position, the second baffle 14 cannot be in the lower position. When the first baffle 13 and the second baffle 14 are in the upper position, the processing liquid discharged from the substrate W is received by the first baffle 13. When the first baffle 13 is in the lower position and the second baffle 14 is in the upper position, the processing liquid discharged from the substrate W is received by the second baffle 14. When the first baffle 13 and the second baffle 14 are in the lower position, the handling robot CR can access the rotating base 21.

[0086] The liquid medicine supply unit 15 includes: a liquid medicine nozzle 40 for spraying liquid medicine onto the upper surface of the substrate W; a liquid medicine supply pipe 41 connected to the liquid medicine nozzle 40; and a liquid medicine valve 42 mounted on the liquid medicine supply pipe 41. Liquid medicine such as hydrofluoric acid (fluorinated hydrogen-containing water: HF) is supplied from a liquid medicine supply source to the liquid medicine supply pipe 41. The liquid medicine valve 42 opens and closes the flow path within the liquid medicine supply pipe 41. In this embodiment, the liquid medicine nozzle 40 is a fixed nozzle whose position is fixed in both the horizontal and vertical directions.

[0087] The liquid sprayed from the liquid nozzle 40 is a liquid used for etching the substrate W, etc. The liquid sprayed from the liquid nozzle 40 is not limited to hydrofluoric acid. The liquid sprayed from the liquid nozzle 40 can be a liquid containing at least one of sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, buffered hydrofluoric acid (BHF), dilute hydrofluoric acid (DHF), ammonia, hydrogen peroxide, organic acids (e.g., citric acid, oxalic acid, etc.), organic bases (e.g., TMAH: tetramethylammonium hydroxide, etc.), surfactants, and corrosion inhibitors. Examples of mixtures of these liquids include SPM (sulfuric acid and hydrogen peroxide mixture), SC1 (ammonia and hydrogen peroxide mixture), and SC2 (hydrochloric acid and hydrogen peroxide mixture).

[0088] The first rinsing fluid supply unit 16 includes: a first rinsing fluid nozzle 50, which sprays rinsing fluid onto the upper surface of the substrate W; a first rinsing fluid supply pipe 51, connected to the first rinsing fluid nozzle 50; and a first rinsing fluid valve 52, mounted on the first rinsing fluid supply pipe 51. Rinsing fluid such as DIW is supplied from a first rinsing fluid supply source to the first rinsing fluid supply pipe 51. The first rinsing fluid valve 52 opens and closes the flow path within the first rinsing fluid supply pipe 51. In this embodiment, the first rinsing fluid nozzle 50 is a fixed nozzle whose position is fixed in both the horizontal and vertical directions.

[0089] The rinsing fluid is a liquid used to rinse away chemicals or other substances adhering to the substrate W. The rinsing fluid sprayed from the first rinsing fluid nozzle 50 is not limited to DIW. The rinsing fluid sprayed from the first rinsing fluid nozzle 50 can be carbonated water, electrolyzed ionized water, ozone water, ammonia water, hydrochloric acid water with a dilution concentration (e.g., about 10 ppm to 100 ppm), or reduced water (hydrogen-containing water).

[0090] The coating agent supply unit 17 includes: a coating agent nozzle 60 for spraying coating agent onto the upper surface of the substrate W; a coating agent supply pipe 61 connected to the coating agent nozzle 60; and a coating agent valve 62 mounted on the coating agent supply pipe 61. Coating agent is supplied to the coating agent supply pipe 61 from a rinsing liquid supply source. The coating agent valve 62 opens and closes the flow path within the coating agent supply pipe 61.

[0091] The coating agent sprayed from the coating agent nozzle 60 is a liquid capable of forming a sublimable coating film (covering film). The coating agent is, for example, a solution in which a sublimable acrylic polymer is dissolved in an organic solvent. Examples of organic solvents that dissolve sublimable acrylic polymers include PGEE (1-ethoxy-2-propanol). In this embodiment, the coating film is formed by evaporating the organic solvent by heating the coating agent to 250°C. Furthermore, the coating film is sublimated by heating it to 300°C.

[0092] The coating agent nozzle 60 moves in both the vertical and horizontal directions via the coating agent nozzle moving unit 38. The coating agent nozzle 60 moves between a central position and a retracted position via horizontal movement. When the coating agent nozzle 60 is in the central position, the outlet 60a of the coating agent nozzle 60 is vertically opposite to the rotation center position of the upper surface of the substrate W. When the coating agent nozzle 60 is in the retracted position, the outlet 60a is not vertically opposite to the upper surface of the substrate W. The rotation center position of the upper surface of the substrate W refers to the position on the upper surface of the substrate W that intersects the rotation axis A1.

[0093] The removal liquid supply unit 18 includes: a removal liquid nozzle 70 that sprays removal liquid onto the periphery of the lower surface of the substrate W; a removal liquid supply pipe 71 connected to the removal liquid nozzle 70; and a removal liquid valve 72 mounted on the removal liquid supply pipe 71. Removal liquid such as TMAH is supplied from a removal liquid supply source to the removal liquid supply pipe 71. The removal liquid valve 72 opens and closes the flow path within the removal liquid supply pipe 71.

[0094] The remover sprayed from the remover nozzle 70 is, for example, IPA. The remover sprayed from the remover nozzle 70 is not limited to IPA. The remover sprayed from the remover nozzle 70 can be an alkaline liquid such as TMAH. The remover sprayed from the remover nozzle 70 is not limited to TMAH. The remover can be, for example, ammonia or choline solution. The remover can be a mixture of TMAH, ammonia, choline solution, etc.

[0095] The organic solvent supply unit 19 includes: an organic solvent nozzle 80 for spraying organic solvent onto the upper surface of the substrate W; an organic solvent supply pipe 81 connected to the organic solvent nozzle 80; and an organic solvent valve 82 mounted on the organic solvent supply pipe 81. Organic solvents such as IPA are supplied from an organic solvent supply source to the organic solvent supply pipe 81. The organic solvent valve 82 opens and closes the flow path within the organic solvent supply pipe 81.

[0096] The organic solvent sprayed from the organic solvent nozzle 80 is not limited to IPA. Any organic solvent sprayed from the organic solvent nozzle 80 may be mixed with both the solvent contained in the coating agent and the water contained in the rinsing solution.

[0097] Figure 3 This is a schematic cross-sectional view used to illustrate an example of the structure of the second liquid treatment unit M2.

[0098] The second liquid processing unit M2 includes: a chamber R2; a second rotary chuck 100 that rotatably holds the substrate W horizontally; a third cup 101 surrounding the second rotary chuck 100; and a third baffle 102 that receives the processing liquid discharged from the substrate W to the outside of the substrate W. The second rotary chuck 100, the third cup 101, and the third baffle 102 are disposed within the chamber R2.

[0099] The second liquid treatment unit M2 further includes a first cleaning liquid supply unit 103, a second cleaning liquid supply unit 104, a second rinsing liquid supply unit 105, and a third rinsing liquid supply unit 106. The first cleaning liquid supply unit 103 supplies cleaning liquid to the upper surface of the substrate W. The second cleaning liquid supply unit 104 supplies cleaning liquid to the lower surface of the substrate W. The second rinsing liquid supply unit 105 supplies rinsing liquid such as DIW to the upper surface of the substrate W. The third rinsing liquid supply unit 106 supplies rinsing liquid such as DIW to the lower surface of the substrate W.

[0100] The second rotary chuck 100 holds a substrate W in a horizontal position while rotating the substrate W about a vertical rotation axis A2 passing through the center of the substrate W. The second rotary chuck 100 includes a rotating base 121, a plurality of chuck pins 120, a rotating shaft 122, and an electric motor 123.

[0101] The rotating base 121 has a circular plate shape along the horizontal direction. A plurality of chuck pins 120 are spaced apart circumferentially on the upper surface of the rotating base 121. When the substrate W is held by the plurality of chuck pins 120, the substrate W moves upward from the upper surface of the rotating base 121. A rotating shaft 122 is connected to the center of the lower surface of the rotating base 121. The rotating shaft 122 is a hollow shaft. The rotating shaft 122 extends vertically along the rotation axis A2. An electric motor 123 provides rotational force to the rotating shaft 122. By rotating the rotating shaft 122 using the electric motor 123, the rotating base 121 is rotated. This causes the substrate W to rotate about the rotation axis A2. The electric motor 123 includes a rotating unit for rotating the substrate W about the rotation axis A2.

[0102] An entrance / exit 131 is formed on the side wall 130 of chamber R2 for a transport robot CR to move substrate W in and out. A gate 132 is provided in chamber R2 to open and close the entrance / exit 131. The gate 132 is driven to open and close by a gate opening / closing unit 133.

[0103] The third cup 101 has an upward-opening annular groove. The third cup 101 surrounds the second rotary chuck 100. The groove of the third cup 101 is connected to a recovery pipe (not shown) or a discharge pipe (not shown). The third baffle 102 surrounds the second rotary chuck 100 in top view.

[0104] The third baffle 102 includes: a third cylindrical portion 102A, which is located above the third cup 101 and surrounds the second rotary chuck 100; and a third extension portion 102B, which extends upward from the third cylindrical portion 102A in a radially inward manner.

[0105] The processing liquid discharged from the substrate W is guided along the third cylindrical portion 102A to the third cup 101. The processing liquid guided to the bottom of the third cup 101 is recovered or disposed of through a recovery pipe or a discharge pipe.

[0106] The third baffle 102 moves up and down between an upper position and a lower position using a third baffle lifting unit 136. When the third baffle 102 is in the upper position, its upper end is positioned above the substrate W. When the third baffle 102 is in the lower position, its upper end is positioned below the substrate W. In the upper position, the third baffle 102 receives the processing liquid discharged from the substrate W. In the lower position, the handling robot CR can access the rotating base 121.

[0107] The first cleaning fluid supply unit 103 includes: a first cleaning fluid nozzle 140 for spraying cleaning fluid onto the upper surface of the substrate W; a first cleaning fluid supply pipe 141 connected to the first cleaning fluid nozzle 140; and a first cleaning fluid valve 142 mounted on the first cleaning fluid supply pipe 141. Cleaning fluid such as SC1 is supplied from a first cleaning fluid supply source to the first cleaning fluid supply pipe 141. In this embodiment, the first cleaning fluid nozzle 140 is a fixed nozzle with positions fixed in both the horizontal and vertical directions.

[0108] The second cleaning fluid supply unit 104 includes: a second cleaning fluid nozzle 150 for spraying cleaning fluid onto the lower surface of the substrate W; a second cleaning fluid supply pipe 151 connected to the second cleaning fluid nozzle 150; and a second cleaning fluid valve 152 mounted on the second cleaning fluid supply pipe 151. Cleaning fluid such as SC1 is supplied from a second cleaning fluid supply source to the second cleaning fluid supply pipe 151. The second cleaning fluid nozzle 150 is inserted into a nozzle receiving portion 125 inserted into a rotating shaft 122. The nozzle receiving portion 125 faces the central region of the lower surface of the substrate W from below. The outlet 150a of the second cleaning fluid nozzle 150 protrudes from the top of the nozzle receiving portion 125.

[0109] The cleaning fluid sprayed from the first cleaning fluid nozzle 140 and the cleaning fluid sprayed from the second cleaning fluid nozzle 150 are not limited to SC1. The cleaning fluid sprayed from the first cleaning fluid nozzle 140 and the second cleaning fluid nozzle 150, other than SC1, can be a liquid containing ammonia. The cleaning fluid sprayed from the first cleaning fluid nozzle 140 and the second cleaning fluid nozzle 150 can be an organic solvent such as IPA.

[0110] The second rinsing fluid supply unit 105 includes: a second rinsing fluid nozzle 160 for spraying rinsing fluid onto the upper surface of the substrate W; a second rinsing fluid supply pipe 161 connected to the second rinsing fluid nozzle 160; and a second rinsing fluid valve 162 mounted on the second rinsing fluid supply pipe 161. Rinsing fluid such as DIW is supplied from a second rinsing fluid supply source to the second rinsing fluid supply pipe 161. In this embodiment, the second rinsing fluid nozzle 160 is a fixed nozzle whose position is fixed in both the horizontal and vertical directions.

[0111] The third rinsing fluid supply unit 106 includes: a third rinsing fluid nozzle 170 that sprays rinsing fluid onto the lower surface of the substrate W; a third rinsing fluid supply pipe 171 connected to the third rinsing fluid nozzle 170; and a third rinsing fluid valve 172 mounted on the third rinsing fluid supply pipe 171. A rinsing fluid such as DIW is supplied from a third rinsing fluid supply source to the third rinsing fluid supply pipe 171. The third rinsing fluid nozzle 170 is inserted into the nozzle receiving portion 125 together with the second cleaning fluid nozzle 150. The outlet 170a of the third rinsing fluid nozzle 170 protrudes from the top of the nozzle receiving portion 125.

[0112] The flushing fluid sprayed from the second flushing fluid nozzle 160 and the flushing fluid sprayed from the third flushing fluid nozzle 170 are not limited to DIW. The flushing fluid sprayed from the second flushing fluid nozzle 160 and the flushing fluid sprayed from the third flushing fluid nozzle 170 can be carbonated water, electrolyzed ionized water, ozone water, ammonia water, hydrochloric acid water with a dilution concentration (e.g., about 10 ppm to 100 ppm), or reduced water (hydrogen-containing water).

[0113] Figure 4 This is an illustrative cross-sectional view illustrating an example of the structure of the first heating unit D1. The first heating unit D1 includes: a chamber R3; a first substrate holder 200 for holding the substrate W; a first heater 201 (substrate heating unit) for heating the substrate W; a first cooling unit 202 for cooling the substrate W; and a plurality of first lifting pins 203 for moving the substrate W up and down.

[0114] The first substrate holder 200 is a plate-shaped member that supports the substrate W from below in a horizontal position. The first substrate holder 200 includes a substrate holding unit that holds the substrate W horizontally. The first substrate holder 200 is housed within the chamber R3.

[0115] A first heater 201 and a first cooling unit 202 are integrated into a first substrate holder 200. The first heater 201, the first cooling unit 202, and the first substrate holder 200 constitute a temperature regulating plate. The first heater 201 heats the substrate W through heat transfer or thermal radiation. The first heater 201 is connected to a first heater energizing unit 210 that supplies power to the first heater 201. The first heater 201 is capable of heating the substrate W to approximately 250°C.

[0116] An electromagnetic wave irradiation unit that heats the substrate W by irradiating electromagnetic waves (ultraviolet, infrared, microwave, X-ray, laser, etc.) can be used instead of the first heater 201. The first cooling unit 202 may have a cooling path passing through the first substrate holder 200. The first cooling unit 202 may have an electronic cooling element.

[0117] Multiple first lifting pins 203 are respectively inserted into multiple through holes in the first substrate holder 200. The multiple first lifting pins 203 move up and down between an upper position and a lower position via a first lifting pin lifting unit 216. When the multiple first lifting pins 203 are in the upper position, the substrate W moves upward from the first substrate holder 200. When the multiple first lifting pins 203 are in the lower position, the upper ends of the multiple first lifting pins 203 retract into the interior of the first substrate holder 200. Therefore, the substrate W is supported from below by the first substrate holder 200.

[0118] The chamber R3 has a first base portion 211 and a first movable cover portion 212 that moves vertically relative to the first base portion 211. The first base portion 211 and the first movable cover portion 212 divide the internal space 213 of the chamber R3. The first movable cover portion 212 moves up and down between an upper position and a lower position via a first cover portion drive unit 214. When the first movable cover portion 212 is in the lower position, the first base portion 211 and the first movable cover portion 212 are in contact, thereby closing the chamber R3. When the first movable cover portion 212 is in the upper position, the handling robot CR can access the internal space 213 of the chamber R3.

[0119] Figure 5 This is a schematic cross-sectional view used to illustrate an example of the structure of the second heating unit D2.

[0120] The second heating unit D2 includes: a sealable chamber R4; a second substrate holder 300 for holding the substrate W; a second heater 301 for heating the substrate W; a second cooling unit 302 for cooling the substrate W; a plurality of second lifting pins 303 for moving the substrate W up and down; and an exhaust unit 304 for exhausting the chamber R4.

[0121] The second substrate holder 300 is a plate-shaped member that supports the substrate W from below in a manner that allows the substrate W to be in a horizontal position. The second substrate holder 300 includes a substrate holding unit that holds the substrate W horizontally. The second substrate holder 300 is housed within the chamber R4.

[0122] The second heater 301 and the second cooling unit 302 are integrated into the second substrate holder 300. The second heater 301, the second cooling unit 302, and the second substrate holder 300 constitute a temperature regulating plate. The second heater 301 heats the substrate W through heat transfer or thermal radiation. The second heater 301 is connected to a second heater energizing unit 310 that supplies power to the second heater 301. The second heater 301 is configured to heat the substrate W at a temperature higher than that of the first heater 201 (see reference). Figure 4 The temperature at which the substrate W is heated needs to be high. For example, the second heater 301 only needs to be able to heat the substrate W to about 300°C.

[0123] An electromagnetic wave irradiation unit that heats the substrate W by irradiating electromagnetic waves (ultraviolet, infrared, microwave, X-ray, laser, etc.) can be used instead of the second heater 301. The second cooling unit 302 may have a cooling path passing through the second substrate holder 300. The second cooling unit 302 may have an electronic cooling element.

[0124] Multiple second lifting pins 303 are respectively inserted into multiple through holes in the second substrate holder 300. The multiple second lifting pins 303 move up and down between an upper position and a lower position via a second lifting pin lifting unit 316. When the multiple second lifting pins 303 are in the upper position, the substrate W moves upward from the second substrate holder 300. When the multiple second lifting pins 303 are in the lower position, the upper ends of the multiple second lifting pins 303 retract into the interior of the second substrate holder 300. Therefore, the substrate W is supported from below by the second substrate holder 300.

[0125] The chamber R4 has a second base portion 311 and a second movable cover portion 312 that moves vertically relative to the second base portion 311. The second base portion 311 and the second movable cover portion 312 divide the internal space 313 of the chamber R4. The second movable cover portion 312 moves up and down between an upper position and a lower position via a second cover drive unit 314. When the second movable cover portion 312 is in the lower position, the second base portion 311 and the second movable cover portion 312 are in contact. When the second movable cover portion 312 is in the lower position, the second base portion 311 and the second movable cover portion 312 are sealed together by an O-ring 315. When the second movable cover portion 312 is in the upper position, the handling robot CR can access the internal space 313 of the chamber R4.

[0126] The second base portion 311 is connected to an exhaust pipe 317 that guides the gas in the internal space 313 to the outside of the chamber R4. An exhaust valve 318 is installed on the exhaust pipe 317 to open and close the flow path within the exhaust pipe 317. The exhaust pipe 317 is connected to an exhaust unit 304. The exhaust unit 304 is, for example, a vacuum pump.

[0127] Figure 6 This is a block diagram illustrating the electrical structure of the main parts of the substrate processing apparatus 1. The controller 3 includes a microcomputer that controls the controlled objects within the substrate processing apparatus 1 according to a predetermined program. More specifically, the controller 3 includes a processor (CPU: Central Processing Unit) 3A and a memory 3B storing the program. The controller 3 is configured to execute various controls for substrate processing by executing the program through the processor 3A. In particular, the controller 3 controls the movements of the handling robots IR and CR, gate opening and closing units 33 and 133, cover drive units 214 and 314, lifting pin lifting units 216 and 316, heater energizing units 210 and 310, baffle lifting units 36, 37, and 136, nozzle moving unit 38, and valves 28, 42, 52, 62, 72, 82, 142, 152, 162, 172, and 318.

[0128] Figure 7 This is a flowchart illustrating a first example of substrate processing using substrate processing apparatus 1, mainly showing the processing implemented by the controller 3 executing a program. Figures 8A-8HThis is an illustrative cross-sectional view used to illustrate the first example of substrate processing.

[0129] In the substrate processing using the substrate processing apparatus 1, the substrate W is continuously processed. During the continuous processing of the substrate W, the first heater 201 of the first heating unit D1 is maintained in a state where it is energized by the first heater energizing unit 210 (see reference). Figure 4 Similarly, during the continuous processing of the substrate W, the second heater 301 of the second heating unit D2 is maintained in a state where it is energized by the second heater energizing unit 310 (see reference). Figure 5 ).

[0130] First, in the substrate processing of substrate processing apparatus 1, refer to Figure 1A The substrate W is transferred from the container C to the first liquid treatment unit M1 using handling robots IR and CR (step S1: first handling process). See [reference] Figure 2 The transport robot CR can enter the first liquid treatment unit M1 through the inlet / outlet 31. The substrate W, which is transported into the first liquid treatment unit M1, is transferred from the transport robot CR to the first rotary chuck 10. The substrate W is placed on the rotating base 21 with the first main surface W1 as the upper surface.

[0131] Then, the suction valve 28 is opened. As a result, with the second main surface W2 of the substrate W in contact with the upper surface of the rotating base 21, the substrate W is held by the first rotating chuck 10 (first substrate holding process). Thereafter, the substrate W is held horizontally until it is removed from the first liquid treatment unit M1 by the handling robot CR.

[0132] Then, the electric motor 23 causes the substrate W to begin rotating (substrate rotation process). Then, the baffle lifting units 36 and 37 position the baffles 13 and 14 in the upper position. Then, the liquid valve 42 is opened. Thus, liquid is supplied from the liquid nozzle 40 of the liquid supply unit 15 to the first main surface W1 of the substrate W (liquid supply process). The liquid supplied to the first main surface W1 is distributed throughout the entire first main surface W1 by centrifugal force. Thus, the substrate W is treated with the liquid (step S2: liquid treatment process). The liquid discharged from the substrate W by centrifugal force is received by the first baffle 13.

[0133] After supplying the medicine solution to the first main surface W1 for a constant time, the medicine solution valve 42 is closed, and the first flushing solution valve 52 is opened. Thus, as... Figure 8AAs shown, rinsing fluid is supplied from the first rinsing fluid nozzle 50 of the first rinsing fluid supply unit 16 to the first main surface W1 (first rinsing fluid supply process). The rinsing fluid supplied to the first main surface W1 is distributed throughout the entire first main surface W1 by centrifugal force. As a result, the medicine on the substrate W is replaced with rinsing fluid (step S3: rinsing fluid replacement process). The medicine and rinsing fluid discharged out of the substrate W by centrifugal force are received by the first baffle 13.

[0134] Then, close the first flushing fluid valve 52 and open the organic solvent valve 82. Thus, as... Figure 8B As shown, organic solvent is supplied to the first main surface W1 from the organic solvent nozzle 80 of the organic solvent supply unit 19 (organic solvent supply process). The organic solvent supplied to the first main surface W1 is distributed throughout the entire first main surface W1 by centrifugal force. As a result, the rinsing liquid on the substrate W is replaced with organic solvent (step S4: organic solvent replacement process). The rinsing liquid and organic solvent discharged to the outside of the substrate W by centrifugal force are received by the first baffle 13.

[0135] During the supply of organic solvent to the first main surface W1, the coating agent nozzle moving unit 38 moves the coating agent nozzle 60 to the central position. Furthermore, the first baffle lifting unit 36 ​​moves the first baffle 13 to the lower position. After supplying organic solvent to the first main surface W1 for a constant time, the organic solvent valve 82 is closed, and the coating agent valve 62 is opened. Thus, as... Figure 8C As shown, coating agent is supplied from the coating agent nozzle 60 of the coating agent supply unit 17 to the first main surface W1 (step S5: coating agent supply process). The coating agent supplied to the first main surface W1 is distributed throughout the entire first main surface W1 by centrifugal force. As a result, the organic solvent on the substrate W is replaced by the coating agent. As a result, a liquid film 90 of the coating agent covers the first main surface W1 of the substrate W. The organic solvent and coating agent discharged out of the substrate W by centrifugal force are received by the second baffle 14.

[0136] The coating agent supplied from the coating agent nozzle 60 to the first main surface W1 of the substrate W sometimes travels from the periphery of the first main surface W1 to the second main surface W2 of the substrate W. Furthermore, coating agent that sometimes scatters outside the first main surface W1 of the substrate W sometimes bounces back from the baffles 13 and 14 and adheres to the periphery of the second main surface W2. Therefore, after the liquid film 90 of the coating agent covers the first main surface W1, the coating agent valve 62 is closed, and instead, the removal liquid valve 72 is opened. Thus, as... Figure 8DAs shown, the removal liquid is supplied from the removal liquid nozzle 70 of the removal liquid supply unit 18 to the periphery of the second main surface W2 of the substrate W (removal liquid supply process). By supplying the removal liquid sprayed from the removal liquid nozzle 70 to the periphery of the second main surface W2 of the substrate W, the periphery of the second main surface W2 is cleaned (step S6: periphery cleaning process). Therefore, it is possible to suppress coating agent contamination of the second main surface W2. In this way, the removal liquid supply unit 18 functions as a periphery cleaning unit.

[0137] During the dispensing of the cleaning fluid from the cleaning fluid nozzle 70, the coating agent nozzle 60 is moved to the retracted position. Then, the cleaning fluid valve 72 is closed, causing the second baffle 14 to move to the lower position. Then, the electric motor 23 stops the substrate W from rotating. Then, the suction valve 28 is closed.

[0138] Then, refer to Figure 2 The gate 32 is reopened by the gate opening and closing unit 33. Then, the handling robot CR accesses the first liquid treatment unit M1 through the inlet and outlet 31 and removes the substrate W from the first liquid treatment unit M1 (step S7: first removal process).

[0139] Then, refer to Figure 4 The substrate W is moved into the first heating unit D1 by the transport robot CR (step S8: second transport process). At this time, the first movable cover 212 is positioned in the upper position by the first cover drive unit 214, allowing the transport robot CR to enter the first heating unit D1. Then, the substrate W is held horizontally by the first substrate holder 200 (second substrate holding process). Specifically, after the substrate W is delivered to the plurality of first lifting pins 203 positioned in the upper position, the first lifting pin lifting unit 216 moves the first lifting pins 203 to the lower position. As a result, the substrate W is placed on the upper surface of the first substrate holder 200. Then, the transport robot CR retracts from the first heating unit D1. Then, the first cover drive unit 214 positions the first movable cover 212 in the lower position. As a result, the chamber R3 is closed.

[0140] In the first heating unit D1, as Figure 8E As shown, the substrate W is heated by a first heater 201 built into the first substrate holder 200 (step S9: first substrate heating process). This causes the coating agent covering the first main surface W1 of the substrate W to cure (curing process). Specifically, the solvent contained in the coating agent evaporates, leaving only solid components on the first main surface W1. This forms a sublimable coating film 250 covering the first main surface W1 of the substrate W (coating film forming process). By performing the curing process, the coating film 250 can be reliably formed.

[0141] Furthermore, the aforementioned peripheral cleaning process is performed before the curing process begins. Therefore, the peripheral portion of the second main surface W2 is cleaned before the coating agent is cured in the curing process. Therefore, the peripheral portion of the second main surface W2 is easier to clean than when the coating agent is cured.

[0142] Then, refer to Figure 4 The first movable cover 212 is positioned in the upper position by the first cover driving unit 214, and the multiple first lifting pins 203 are positioned in the upper position by the first lifting pin lifting unit 216. Then, the handling robot CR receives the substrate W from the multiple first lifting pins 203 and removes the substrate W from the first heating unit (step S10: second removal process).

[0143] Then, refer to Figure 3 The substrate W is moved into the second liquid treatment unit M2 using a transport robot CR (step S11: third transport step). The substrate W, moved into the second liquid treatment unit M2, is transferred from the transport robot CR to the second rotary chuck 100. The substrate W is held by multiple chuck pins 120 with its first main surface W1 facing upwards. Thus, the second rotary chuck 100 holds the substrate W horizontally (third substrate holding step). Thereafter, the substrate W is held horizontally until it is removed from the second liquid treatment unit M2 using the transport robot CR.

[0144] Then, the electric motor 123 causes the base plate W to start rotating. Then, the third baffle 102 is positioned in the upper position by the third baffle lifting unit 136.

[0145] In the second liquid treatment unit M2, refer to Figure 8F The second main surface W2 is cleaned with a cleaning solution (step S12: second main surface cleaning process). Specifically, the second cleaning solution valve 152 is opened. As a result, cleaning solution is supplied from the second cleaning solution nozzle 150 of the second cleaning solution supply unit 104 to the second main surface W2 of the substrate W (second cleaning solution supply process). The cleaning solution supplied to the second main surface W2 is distributed throughout the entire second main surface W2 by centrifugal force. Thus, the second main surface W2 is cleaned. In this way, the second cleaning solution supply unit 104 functions as a second main surface cleaning unit. Cleaning solution that is dispersed outwards from the substrate W by centrifugal force is received by the third baffle 102. The second main surface cleaning process is performed after the coating film formation process is completed.

[0146] Then, after supplying cleaning fluid to the second main surface W2 for a constant time, the second cleaning fluid valve 152 is closed. Then, as... Figure 8GAs shown, the first cleaning fluid valve 142 is opened. This supplies cleaning fluid from the first cleaning fluid nozzle 140 of the first cleaning fluid supply unit 103 to the surface of the coated film 250 (first cleaning fluid supply step). This cleans the surface of the coated film 250 (step S13: coated film cleaning step). Thus, the coated film cleaning step begins after the second main surface cleaning step. That is, the coated film cleaning step includes the first cleaning step of cleaning the surface of the coated film 250 after the second main surface cleaning step. Thus, the first cleaning fluid supply unit 103 is included in the coated film cleaning unit.

[0147] Then, the first cleaning fluid valve 142 is closed. Instead, the second rinsing fluid valve 162 and the third rinsing fluid valve 172 are opened. This begins to supply rinsing fluid to the first main surface W1 from the second rinsing fluid nozzle 160 of the second rinsing fluid supply unit 105. Specifically, rinsing fluid is supplied to the surface of the coating film 250 formed on the first main surface W1. The rinsing fluid supplied to the surface of the coating film 250 is distributed across the entire surface of the coating film 250 by centrifugal force. This replaces the cleaning fluid on the coating film 250 with rinsing fluid. Next, rinsing fluid is supplied to the second main surface W2 from the third rinsing fluid nozzle 170 of the third rinsing fluid supply unit 106. This replaces the cleaning fluid on the second main surface W2 with rinsing fluid. Thus, the cleaning fluid adhering to both sides of the substrate W (specifically, the surface of the coating film 250 and the second main surface W2) is replaced with rinsing fluid (step S14: second rinsing fluid replacement process).

[0148] Then, the electric motor 123 rotates the substrate W at high speed to remove the rinsing liquid adhering to the substrate W. This dries the substrate W (S15: substrate drying process). Then, the electric motor 123 stops the substrate W from rotating. Then, the third baffle lifting unit 136 moves the third baffle 102 to the lower position.

[0149] Then, refer to Figure 3 The gate 132 is reopened by the gate opening and closing unit 133. Then, the handling robot CR accesses the second liquid treatment unit M2 through the inlet and outlet 131 and removes the substrate W from the second liquid treatment unit M2 (step S16: third removal process).

[0150] Then, refer to Figure 5The substrate W is moved into the second heating unit D2 using a handling robot CR (step S17: second handling process). At this time, the second movable cover 312 is positioned in the upper position by the second cover drive unit 314, allowing the handling robot CR to enter the second heating unit D2. Then, the substrate W is held horizontally by the second substrate holder 300 (fourth substrate holding process). Specifically, after the substrate W is handed over to the plurality of second lifting pins 303 positioned in the upper position, the second lifting pin lifting unit 316 moves the second lifting pins 303 to the lower position. This places the substrate W on the upper surface of the second substrate holder 300. Then, the handling robot CR retracts from the second heating unit D2. Then, the second cover drive unit 314 positions the second movable cover 312 in the lower position. This closes the chamber R4.

[0151] In the second heating unit D2, as Figure 8H As shown, the substrate W is heated by the second heater 301 built into the second substrate holder 300 (step S18: second substrate heating process). This causes the coating film 250 covering the first main surface W1 of the substrate W to sublimate (sublimation process). The sublimation process is performed after the coating film cleaning process. Thus, the second heater 301 functions as a sublimation unit. When heating the substrate W, the exhaust valve 318 can be opened. This allows the exhaust unit 304 to expel the gas generated by the sublimation of the coating film 250 from the interior space 313 of the chamber R4.

[0152] Then, the second movable cover 312 is positioned in the upper position by the second cover driving unit 314, and the plurality of second lifting pins 303 are moved to the upper position by the second lifting pin lifting unit 316. Then, the handling robot CR receives the substrate W from the plurality of second lifting pins 303 and removes the substrate W from the second heating unit D2 (step S19: fourth removal process).

[0153] Next, the changes in the coated film 250 before and after the coated film cleaning process will be explained. Figure 9A It is the beginning of the coating and cleaning process. Figure 7 A schematic cross-sectional view of the periphery of the first main surface W1 of the substrate W prior to step S13). Figure 9B This is a schematic cross-sectional view of the periphery of the first main surface W1 of the substrate W shortly after the coating and cleaning process has been completed.

[0154] like Figure 9A As shown, the coating 250 is preferably formed such that the thickness T1 of the coating 250 is greater than the height T2 of the metal pattern P formed on the first main surface W1.

[0155] Here, in the second main surface cleaning process, there is a concern that the cleaning fluid falling onto the second main surface W2 may float around the periphery of the substrate W and settle onto the surface 251 of the coated film 250. There is also a concern that the cleaning fluid falling onto the second main surface W2 may scatter towards components (such as the third baffle 102) disposed around the periphery of the substrate W, bounce off these components, and adhere to the surface 251 of the coated film 250 (see [reference]). Figure 8F (The arrow). Furthermore, there is a concern that the cleaning fluid falling onto the second main surface W2 may circulate from the periphery of the second main surface W2 to the first main surface W1 and adhere to the surface 251 of the coated film 250. Once the cleaning fluid falls onto the second main surface W2, it may contain contaminants such as particles 256. Droplets 255 of the cleaning fluid that bounce back from the components included in the substrate processing apparatus 1 are more likely to contain particles 256.

[0156] Before the coating cleaning process, droplets 255 and particles 256 contained in the droplets 255 are attached to the surface 251 of the coating film 250. The particles 256 attached to the surface 251 of the coating film 250 are not limited to the particles contained in the droplets 255 of the cleaning liquid that are dispersed outward from the substrate W during the second main surface cleaning process. It is also possible that particles 257 may attach to the surface 251 of the coating film 250 for some reason other than the second main surface cleaning process from the time the coating agent is supplied to the first main surface W1 of the substrate W until the start of the coating cleaning process.

[0157] In the coating cleaning process, these droplets 255 and particles 256, 257 are removed from the surface 251 of the coating 250. The cleaning solution supplied to the surface 251 of the coating 250 in the coating cleaning process can be a liquid that dissolves the surface layer 252 of the coating 250.

[0158] If the cleaning solution used in the coating cleaning process is a liquid that dissolves the surface layer 252 of the coated membrane 250, then... Figure 9B As shown, in the coating cleaning process, particles 256 and 257 attached to surface 251 are removed together with surface layer 252 (surface layer removal process). Here, there may be situations where particles 256 and 257 are firmly attached to the surface 251 of the coating 250, making it difficult to remove particles 256 and 257 from the surface 251 of the coating 250. Even in this case, by removing particles 256 and 257 together with surface layer 252 of the coating 250 in the coating cleaning process, the surface 251 of the coating 250 can be reliably cleaned.

[0159] The coating 250 becomes thinner due to the surface removal process, thereby forming a new surface 253 on the side closer to the first main surface W1 than the surface 251. Preferably, the coating cleaning process is performed in such a way that the thickness T1 of the coating 250 is greater than the height T2 of the metal pattern P even after the coating cleaning process. This allows the removal of the surface layer 252 of the coating 250 to be performed during the coating cleaning process.

[0160] Unlike the substrate processing, the cleaning solution supplied to the surface 251 of the coated film 250 in the coated film cleaning process can be a liquid that does not dissolve the surface layer 252 of the coated film 250.

[0161] As described above, the substrate processing apparatus 1 according to this embodiment includes: a substrate holding unit (a first rotary chuck 10, a second rotary chuck 100, a first substrate holder 200, and a second substrate holder 300); a coating agent supply unit 17 for supplying coating agent to a first main surface W1; a coating film cleaning unit (a first cleaning liquid supply unit 103) for cleaning the surface of the coating film 250 covering the first main surface W1; and a controller 3. Furthermore, the controller 3 executes: a substrate holding process (first to fourth substrate holding processes), in which the substrate W is held horizontally by the first rotary chuck 10, the second rotary chuck 100, the first substrate holder 200, and the second substrate holder 300; a coating film forming process, in which the coating film 250 is formed by supplying coating agent from the coating agent supply unit 17 to the first main surface W1; and a coating film cleaning process, in which the first cleaning liquid supply unit 103 cleans the surface of the coating film 250.

[0162] In this way, a sublimable coating film 250 is formed during the coating film formation process. Therefore, the coating film 250 can be removed from the first main surface W1 without using a liquid for removing the coating film from the first main surface. Therefore, the collapse of the metal pattern P caused by the supplied liquid can be suppressed. Furthermore, the surface of the coating film 250 is cleaned during the coating film cleaning process. Therefore, even if the coating film 250 sublimates after the coating film cleaning process, it is possible to suppress the residue of dirt (cleaning liquid droplets 255 and particles 256, 257) adhering to the surface 251 of the coating film 250 on the first main surface W1. Therefore, it is possible to suppress contamination of the first main surface W1 of the substrate W.

[0163] Furthermore, the substrate processing apparatus 1 according to the first embodiment also includes a second cleaning fluid supply unit 104 (second main surface cleaning unit) for cleaning the second main surface W2. Then, after the coating film formation process is completed, the controller 3 also executes a second main surface cleaning process in which the second cleaning fluid supply unit 104 cleans the second main surface W2. Moreover, the controller 3 starts a coating film cleaning process (first cleaning process) after the second main surface cleaning process is completed.

[0164] Thus, the coating cleaning process begins after the second main surface cleaning process. Therefore, even if cleaning fluid from the second main surface cleaning process adheres to the surface 251 of the coating 250, the surface 251 of the coating 250 can be cleaned during the coating cleaning process. Therefore, the substrate processing apparatus 1 that cleans the second main surface W2 during the second main surface cleaning process can suppress contamination of the first main surface W1.

[0165] Here, since it takes a predetermined time for the cleaning fluid that lands on the second main surface W2 to reach the surface 251 of the coated film 250, the cleaning fluid may adhere to the surface 251 of the coated film 250 during the period from the end of the second main surface cleaning process to the elapsed time. If the structure of the substrate processing apparatus 1, where the cleaning of the surface 251 of the coated film 250 begins after the second main surface cleaning process, is such that the cleaning fluid adhering to the surface 251 of the coated film 250 caused by the second main surface cleaning process can be reliably removed. Furthermore, even if dirt (particles 257) adheres to the surface 251 of the coated film 250 before the start of the second main surface cleaning process, the dirt (particles 257) can be removed together with the droplets 255 (and particles 256) of the cleaning fluid adhering to the surface 251 of the coated film 250 caused by the second main surface cleaning process.

[0166] Furthermore, the first cleaning fluid supply unit 103 according to the first embodiment is included in the first main surface cleaning unit. Moreover, the controller 3 performs a process (first cleaning fluid supply process) in the coating cleaning process of cleaning the surface 251 of the coating 250 by supplying cleaning fluid from the first cleaning fluid supply unit 103 to the first main surface W1.

[0167] Therefore, the cleaning solution supplied to the surface 251 of the coated film 250 during the coating cleaning process diffuses on the surface 251 of the coated film 250. As a result, the cleaning time for the surface 251 of the coated film 250 can be reduced.

[0168] Furthermore, the substrate processing apparatus 1 according to the first embodiment also includes a second heater 301 (sublimation unit) for sublimating the coated film 250. Moreover, the controller 3 executes the sublimation process by using the second heater 301 to sublimate the coated film 250 after the coated film cleaning process is completed. Therefore, the coated film 250 is sublimated, exposing the first main surface W1. Since the surface 251 of the coated film 250 is cleaned in the coated film cleaning process, it is possible to prevent dirt adhering to the surface of the coated film 250 from remaining on the first main surface W1 after the coated film 250 sublimates. That is, it is possible to prevent the first main surface W1 from becoming contaminated.

[0169] Furthermore, according to the first embodiment, a metal pattern P is formed on the first main surface W1. Therefore, if a sublimation coating 250 is formed on the first main surface W1, the substrate processing apparatus 1, which cleans the surface 251 of the coating 250, can suppress the collapse of the metal pattern P and prevent the first main surface W1 from becoming contaminated.

[0170] The substrate processing using the substrate processing apparatus 1 of the first embodiment is not limited to the examples described above. The substrate processing using the substrate processing apparatus 1 of the first embodiment may be the following examples.

[0171] Figure 10 This is an illustrative cross-sectional view used to explain a second example of substrate processing using substrate processing apparatus 1. (Example) Figure 10 As shown, in the substrate processing of substrate processing apparatus 1, the coating cleaning process can be performed. Figure 7 Step S13) and the second main surface cleaning process ( Figure 7 Step S12) is performed in parallel. That is, the coating cleaning process includes a second cleaning process that cleans the surface of the coating 250 in parallel with the second main surface cleaning process. Therefore, the cleaning liquid adhering to the surface of the coating 250 caused by the second main surface cleaning process can be removed immediately. If the surface of the coating 250 is already contaminated before the second main surface cleaning process begins, the contaminant can be removed before the cleaning liquid falling onto the second main surface W2 reaches the surface of the coating 250. Moreover, the time until the end of the coating cleaning process can be shortened. Therefore, the number of substrates that can be processed per unit time can be increased. That is, the processing capacity is improved. In this way, the processing capacity can be improved while the first main surface W1 is suppressed from being contaminated.

[0172] Preferably, the second cleaning process continues after the second main surface cleaning process is completed. As described above, since it takes a predetermined time for the cleaning fluid that lands on the second main surface W2 to reach the surface of the coated film 250, the cleaning fluid may adhere to the surface of the coated film 250 during the period from the end of the second main surface cleaning process until the predetermined time has elapsed. Therefore, by ending the second cleaning process after the second main surface cleaning process, as in this second example of substrate processing, it is possible to further suppress the adhesion of contaminated cleaning fluid to the surface of the coated film 250 after the coated film cleaning process is completed.

[0173] Figure 11A and Figure 11B This is an illustrative cross-sectional view used to explain a third example of substrate processing using substrate processing apparatus 1. (Example) Figure 11A As shown, in the substrate processing of substrate processing apparatus 1, it can be combined with the second main surface cleaning process ( Figure 7In parallel with step S12), rinsing liquid is supplied to the surface of the coated film 250 from the second rinsing liquid nozzle 160. This prevents droplets that scatter from the substrate W during the second main surface cleaning process from adhering to the surface of the coated film 250. In other words, the rinsing liquid sprayed from the second rinsing liquid nozzle 160 protects the coated film 250. Thus, the rinsing liquid sprayed from the second rinsing liquid nozzle 160 functions as a protective liquid for the surface of the coated film 250. That is, the protective liquid supply process of supplying protective liquid to the surface of the coated film 250 is parallel to the second main surface cleaning process. Preferably, the protective liquid supply process does not end simultaneously with the end of the second main surface cleaning process, but ends after the second main surface cleaning process.

[0174] Then, as Figure 11B As shown, the supply of rinsing fluid from the second rinsing fluid nozzle 160 is stopped before the supply of cleaning fluid from the first cleaning fluid nozzle 140 to the surface of the coated film 250 begins. That is, the protective fluid supply process is initiated during the coated film cleaning process ( Figure 7 Step S13) is executed before starting.

[0175] According to the substrate processing in the third example, a protective solution is used to prevent contaminated cleaning solution from adhering to the surface of the coated film 250. Therefore, it is possible to prevent the first main surface W1 from becoming contaminated.

[0176] Figure 12A and Figure 12B This is an illustrative cross-sectional view used to explain a fourth example of substrate processing using substrate processing apparatus 1. (See attached image.) Figure 12A and Figure 12B As shown, in the substrate processing of the substrate processing apparatus 1, the substrate W can be held in the second rotary chuck 100 of the second liquid processing unit M2 with the second main surface W2 as the upper surface. This substrate processing is performed in the second main surface cleaning step (…). Figure 7 In step S12), cleaning fluid is supplied from the first cleaning fluid nozzle 140 of the first cleaning fluid supply unit 103 to the second main surface W2. Furthermore, in the coating cleaning process (… Figure 7 In step S13), cleaning fluid is supplied from the second cleaning fluid nozzle 150 of the second cleaning fluid supply unit 104 to the surface of the coated film 250. Thus, in this substrate processing, the first cleaning fluid supply unit 103 functions as a second main surface cleaning unit, and the second cleaning fluid supply unit 104 functions as a coated film cleaning unit (cleaning fluid supply unit).

[0177] In addition, substrate processing is performed in the second rinsing solution replacement process ( Figure 7 In step S14), rinsing fluid is supplied from the second rinsing fluid nozzle 160 to the second main surface W2, and rinsing fluid is supplied from the third rinsing fluid nozzle 170 to the first main surface W1.

[0178] <Second Implementation>

[0179] Figure 13 This is an illustrative cross-sectional view illustrating an example of the structure of the second liquid processing unit M2P included in the substrate processing apparatus 1P according to the second embodiment. Figure 13 In this drawing, components that are the same as those described so far are marked with the same reference numerals, and their descriptions are omitted.

[0180] The second liquid treatment unit M2P and the second liquid treatment unit M2 of the first embodiment (see reference) Figure 3 The main difference is that the second liquid treatment unit M2P includes a brush unit 108 instead of the first cleaning liquid supply unit 103. The brush unit 108 is a unit that cleans the upper surface of the substrate W by rubbing the brush 180 against the upper surface of the substrate W. The brush unit 108 includes: a brush 180 for cleaning the upper surface of the substrate W; a brush holder 181 disposed above the brush 180; and a brush arm 182 for supporting the brush holder 181.

[0181] Brush 180 is a sponge brush made of synthetic resin such as PVA (polyvinyl alcohol) that is capable of elastic deformation. Brush 180 protrudes downward from brush holder 181. Brush 180 is not limited to a sponge brush, but can be a brush with bristles formed by multiple fibers made of resin.

[0182] Brush 180 moves horizontally and vertically via brush moving unit 183. Brush moving unit 183 moves brush 180 between a central position and a retracted position via horizontal movement. When brush 180 is in the central position, it is opposite to the rotation center of the upper surface of substrate W in the vertical direction. When brush 180 is in the retracted position, it is not opposite to the upper surface of substrate W in the vertical direction. Controller 3 controls brush moving unit 183 (see reference). Figure 6 )

[0183] In the substrate processing apparatus 1P, apart from the coating cleaning process ( Figure 7 Except for step S13), the substrate processing is performed almost identically to that of the substrate processing apparatus 1. In the coating cleaning process of the substrate processing using the substrate processing apparatus 1P, the surface of the coating 250 is scrubbed using the brush unit 108. Specifically, the brush moving unit 183 moves the brush arm 182 and presses the brush 180 against the surface of the coating 250. As the substrate W rotates, the brush 180 rubs against the surface of the coating 250. Therefore, the coating 250 can be cleaned more reliably. Thus, in the substrate processing using the substrate processing apparatus 1P, the brush unit 108 functions as a coating cleaning unit. In addition, when the brush 180 cleans the coating 250, the surface layer 252 of the coating 250 (see reference 1) can also be removed, similar to the substrate processing using the substrate processing apparatus 1 of the first embodiment. Figure 9A and Figure 9B).

[0184] According to the second embodiment, the same effect as the first embodiment is achieved.

[0185] Furthermore, in substrate processing using the substrate processing apparatus 1P, similar to the fourth example of substrate processing using the substrate processing apparatus 1 of the first embodiment, the substrate W can be held in the second rotary chuck 100 of the second liquid processing unit M2P with the second main surface W2 as the upper surface. In the substrate processing, during the second main surface cleaning process ( Figure 7 In step S12), the second main surface W2 is scrubbed using a brush 180. Additionally, in the coating cleaning process ( Figure 7 In step S13), cleaning fluid is supplied from the second cleaning fluid nozzle 150 to the surface of the coated film 250. Thus, in the substrate processing, the brush unit 108 functions as a second main surface cleaning unit, and the second cleaning fluid supply unit 104 functions as a coated film cleaning unit (cleaning fluid supply unit).

[0186] In addition, in the second flushing fluid replacement process ( Figure 7 In step S14), flushing fluid is supplied from the second flushing fluid nozzle 160 to the second main surface W2, and flushing fluid is supplied from the third flushing fluid nozzle 170 to the first main surface W1.

[0187] <Third Implementation Method>

[0188] Figure 14 This is an illustrative cross-sectional view illustrating an example of the structure of the second liquid processing unit M2Q included in the substrate processing apparatus 1Q of the third embodiment. Figure 14 In this drawing, components that are the same as those described so far are marked with the same reference numerals, and their descriptions are omitted.

[0189] The second liquid treatment unit M2Q and the second liquid treatment unit M2 of the first embodiment (refer to) Figure 3 The main difference is that the second liquid treatment unit M2Q includes a third cleaning liquid supply unit 109 instead of the first cleaning liquid supply unit 103.

[0190] The third cleaning fluid supply unit 109 includes a dual-fluid nozzle 190, a third cleaning fluid supply pipe 191, a third cleaning fluid valve 192, a gas supply pipe 196, and a gas valve 197. The dual-fluid nozzle 190 mixes and sprays a cleaning fluid such as SC1 with a gas such as nitrogen (N2). The third cleaning fluid supply pipe 191 and the gas supply pipe 196 are connected to the dual-fluid nozzle 190. Cleaning fluid is supplied from a third cleaning fluid supply source to the third cleaning fluid supply pipe 191. The third cleaning fluid valve 192 opens and closes the flow path within the third cleaning fluid supply pipe 191. A gas such as nitrogen is supplied from a gas supply source to the gas supply pipe 196. The gas valve 197 opens and closes the flow path within the gas supply pipe 196. The third cleaning fluid valve 192 and the gas valve 197 are controlled by a controller 3 (see reference 3). Figure 6 ).

[0191] The cleaning fluid supplied from the third cleaning fluid supply source to the third cleaning fluid supply pipe 191 is not limited to SC1. The cleaning fluid sprayed from the first cleaning fluid nozzle 140 can be a liquid containing ammonia other than SC1.

[0192] The gas supplied from the gas supply source to the gas supply pipe 196 is preferably a non-reactive gas such as nitrogen. The non-reactive gas is not limited to nitrogen; it is a gas that is inactive to the upper surface and pattern of the substrate W. Examples of non-reactive gases, besides nitrogen, include rare gases such as argon.

[0193] The dual-fluid nozzle 190 moves in both the vertical and horizontal directions via the dual-fluid nozzle moving unit 198. The horizontal movement of the dual-fluid nozzle moving unit 198 moves the dual-fluid nozzle 190 between a central position and a retracted position. When the dual-fluid nozzle 190 is in the central position, the nozzle outlet 190a is vertically aligned with the rotation center of the upper surface of the substrate W. When the dual-fluid nozzle 190 is in the retracted position, the nozzle outlet 190a is not vertically aligned with the upper surface of the substrate W. The dual-fluid nozzle moving unit 198 is controlled by the controller 3 (see reference 3). Figure 6 ).

[0194] The substrate processing apparatus 1Q performs substrate processing that is almost identical to that of the substrate processing apparatus 1. In the substrate processing using the substrate processing apparatus 1Q, a third cleaning liquid supply unit 109 is used in the steps of the substrate processing using the substrate processing apparatus 1Q, where the first cleaning liquid supply unit 103 is used. For example, in the coating cleaning step, droplets of cleaning liquid are sprayed together with gas from the nozzle 190a of the dual-fluid nozzle 190 onto the surface of the coating 250. This cleans the surface of the coating 250. Therefore, the coating 250 can be cleaned more reliably. Thus, the third cleaning liquid supply unit 109 functions as a coating cleaning unit. Furthermore, when cleaning the coating 250 with the dual-fluid nozzle 190, similar to the substrate processing using the substrate processing apparatus 1 of the first embodiment, the surface layer 252 of the coating 250 (see reference 109) can also be removed. Figure 9A and Figure 9B ).

[0195] Furthermore, the third embodiment produces the same effects as the first embodiment.

[0196] Furthermore, in the substrate processing using the substrate processing apparatus 1Q, similar to the fourth example of substrate processing using the substrate processing apparatus 1 of the first embodiment, the substrate W can be held in the second rotary chuck 100 of the second liquid processing unit M2P with the second main surface W2 as the upper surface. In the substrate processing, in the second main surface cleaning process ( Figure 7 In step S12), cleaning fluid is supplied from the dual-fluid nozzle 190 to the second main surface W2. Furthermore, in the coated film cleaning process ( Figure 7 In step S13), cleaning fluid is supplied from the second cleaning fluid nozzle 150 to the surface of the coated film 250. Thus, in the substrate processing, the third cleaning fluid supply unit 109 functions as the second main surface cleaning unit, and the second cleaning fluid supply unit 104 functions as the coated film cleaning unit (cleaning fluid supply unit).

[0197] In addition, in the second flushing fluid replacement process ( Figure 7 In step S14), flushing fluid is supplied from the second flushing fluid nozzle 160 to the second main surface W2, and flushing fluid is supplied from the third flushing fluid nozzle 170 to the first main surface W1.

[0198] Furthermore, using the substrate processing apparatus 1Q of the third embodiment, the same substrate processing as in the second and third examples of substrate processing using the substrate processing apparatus 1 of the first embodiment can be performed. Even in these cases, it is evident that the third cleaning fluid supply unit 109 can be used instead of the first cleaning fluid supply unit 103.

[0199] <Fourth Implementation>

[0200] Figure 15This is a illustrative perspective view used to explain the structure of the substrate processing apparatus 1R according to the fourth embodiment. Figure 15 In this drawing, components that are the same as those described so far are marked with the same reference numerals, and their descriptions are omitted.

[0201] Substrate processing apparatus 1R and substrate processing apparatus 1 of the first embodiment (see reference) Figure 1B The main difference is that the substrate processing apparatus 1R may include first heating units D13 and D14 instead of second heating units D21 and D22. Specifically, the third processing tower 2C includes second liquid processing units M21 and M22 and the first heating unit D13. The fourth processing tower 2D includes second liquid processing units M23 and M24 and the first heating unit D14. In substrate processing using the substrate processing apparatus 1R, no... Figure 7 Steps S17 to S19. After being removed from the substrate processing apparatus 1R, the coating 250 formed on the first main surface W1 of the substrate W can be sublimated by a sublimation unit (e.g., a plasma ashing apparatus) provided independently of the substrate processing apparatus 1R.

[0202] This invention is not limited to the embodiments described above, and can be implemented in other ways.

[0203] Unlike the above-described embodiments, in the substrate processing apparatus 1, 1P, 1Q, a plasma ashing unit (sublimation unit) capable of removing the coating film 250 can be provided instead of the second heating unit D2.

[0204] Furthermore, it was explained that in the substrate processing of the substrate processing apparatuses 1, 1P, 1Q, and 1R using the above-described embodiments, the coating agent on the substrate W is cured by heating the substrate W in the first heating unit D1. However, unlike the substrate processing described above, substrate processing can be performed by heating the substrate W in the first liquid processing unit M1 or the second liquid processing unit M2 to cure the coating agent on the substrate W. For this purpose, a heater (not shown) for heating the substrate W needs to be provided in the first liquid processing unit M1 or the second liquid processing unit M2. When a heater for heating the substrate W is provided in the first liquid processing unit M1 or the second liquid processing unit M2, the substrate processing apparatuses 1, 1P, 1Q, and 1R may not include the first heating unit D1.

[0205] Furthermore, in the above embodiments, the coating agent is cured by heating. However, the coating agent may be a coating agent that cures at room temperature (e.g., a quick-drying coating agent). In this case, the substrate processing apparatuses 1, 1P, 1Q, and 1R may not include the first heating unit D1. Alternatively, the coating agent may be a coating agent that cures by cooling. In this case, the substrate W can be cooled by the first cooling unit 202 included in the first heating unit D1 of the substrate processing apparatuses 1, 1P, 1Q, and 1R. Furthermore, the processing liquid supplied to the substrate W after the coating film 250 is formed is preferably cooled.

[0206] Furthermore, the above-described implementation method includes a peripheral cleaning process ( Figure 7 In step S6), the periphery of the second main surface W2 is cleaned with a removal solution. However, when using a substrate W in substrate processing where the metal pattern P is not formed on the periphery of the first main surface W1, the periphery cleaning process ( Figure 7 In step S6), in addition to the periphery of the second main surface W2, the periphery of the first main surface W1 can also be cleaned with a cleaning liquid. In this case, a cleaning liquid supply unit (not shown) that supplies cleaning liquid to the periphery of the upper surface of the substrate W needs to be provided in the first liquid treatment unit M1 of the substrate processing apparatus 1, 1P, 1Q, 1R.

[0207] Furthermore, it has been explained that in the above-described embodiment, the surface of the coated film 250 and the second main surface W2 are cleaned with a cleaning solution such as SC1. However, unlike the above-described embodiment, if the surface of the coated film 250 and the second main surface W2 can be sufficiently cleaned by supplying a rinsing solution such as DIW to the surface of the coated film 250 and the second main surface W2, it is not necessary to supply SC1 or the like to the surface of the coated film 250 and the second main surface W2. That is, unlike the above-described embodiment, substrate processing using a rinsing solution such as DIW as the cleaning solution can be performed. In this case, one of the second rinsing solution supply unit 105 and the third rinsing solution supply unit 106 functions as a coated film cleaning unit (cleaning solution supply unit), and the other of the second rinsing solution supply unit 105 and the third rinsing solution supply unit 106 functions as a second main surface cleaning unit.

[0208] The embodiments of the present invention have been described in detail, but these are merely specific examples used to clarify the technical content of the present invention. The present invention should not be limited to these specific examples, and the scope of the present invention is defined only by the appended claims.

[0209] This application corresponds to Japan Patent Application No. 2017-148111, filed with the Japan Patent Office on July 31, 2017, the entire disclosure of which is incorporated herein by reference.

Claims

1. A substrate processing method, wherein, include: In the substrate holding process, a substrate having a first main surface with a metal pattern formed thereon and a second main surface opposite to the first main surface is held horizontally. The coating forming process involves supplying a coating agent to the first main surface to form a sublimation coating covering the first main surface; as well as The coating cleaning process cleans the surface of the coating. The coating film formation process includes a curing process, in which the coating agent is supplied to the first main surface and then cured by heating the substrate to form the coating film. The substrate processing method further includes: The sublimation process involves sublimating the coated film after the coating film cleaning process is completed. The second main surface cleaning process involves cleaning the second main surface after the coating film formation process is completed; and The protective liquid supply process involves supplying a protective liquid to the surface of the coated film to protect its surface. The coating cleaning process begins after the second main surface cleaning process is completed or is performed in parallel with the second main surface cleaning process. The protective liquid supply process is performed in parallel with the second main surface cleaning process before the coating cleaning process begins.

2. The substrate processing method according to claim 1, wherein, Also includes: The peripheral cleaning process involves cleaning the periphery of the second main surface before the curing process begins.

3. A substrate processing method, wherein, include: In the substrate holding process, the substrate having a first main surface and a second main surface opposite to the first main surface is held horizontally; The coating forming process involves supplying a coating agent to the first main surface to form a sublimation coating covering the first main surface; The coating cleaning process cleans the surface of the coating; The second main surface cleaning process involves cleaning the second main surface after the coating film formation process is completed. as well as The protective liquid supply process involves supplying a protective liquid to the surface of the coated film to protect its surface. The coating cleaning process begins after the second main surface cleaning process is completed or is performed in parallel with the second main surface cleaning process. The protective liquid supply process is performed in parallel with the second main surface cleaning process before the coating cleaning process begins. The substrate processing method further includes a sublimation process, wherein the coated film is sublimated after the coated film cleaning process is completed.

4. The substrate processing method according to claim 1 or 3, wherein, The coating cleaning process includes a first cleaning process that begins after the second main surface cleaning process has been completed, in which the surface of the coating is cleaned.

5. The substrate processing method according to claim 1 or 3, wherein, The coating cleaning process includes a second cleaning process that cleans the surface of the coating in parallel with the second main surface cleaning process.

6. The substrate processing method according to claim 5, wherein, The second cleaning process ends after the second main surface cleaning process is completed.

7. The substrate processing method according to claim 3, wherein, The coating film forming process includes a curing process, in which the coating agent is supplied to the first main surface and then the coating agent is cured by heating the substrate to form the coating film.

8. The substrate processing method according to claim 7, wherein, Also includes: The peripheral cleaning process involves cleaning the periphery of the second main surface before the curing process begins.

9. The substrate processing method according to claim 3, wherein, A metallic pattern is formed on the first main surface.

10. The substrate processing method according to claim 1 or 3, wherein, The coating cleaning process includes the step of cleaning the surface of the coating by supplying a cleaning solution to the surface of the coating.

11. The substrate processing method according to claim 1 or 3, wherein, The coating cleaning process includes the process of removing the surface layer of the coating.

12. A substrate processing apparatus, wherein, include: The substrate holding unit holds the substrate, which has a first main surface with a metal pattern formed thereon and a second main surface opposite to the first main surface, horizontally. The coating agent supply unit supplies a coating agent capable of forming a sublimable coating film covering the first main surface to the first main surface. The coating cleaning unit cleans the surface of the coating. The substrate heating unit heats the substrate. The second main surface cleaning unit cleans the second main surface. The protective liquid supply unit supplies a protective liquid to the first main surface to protect the surface of the coated film. The sublimation unit sublimates the coating film, and The controller controls the substrate holding unit, the coating agent supply unit, the coating film cleaning unit, the substrate heating unit, the second main surface cleaning unit, the protective liquid supply unit, and the sublimation unit. The controller is programmed to perform a substrate holding process, a coating film formation process, and a coating film cleaning process. The substrate holding process uses the substrate holding unit to hold the substrate horizontally. The coating film formation process forms the coating film by supplying the coating agent from the coating agent supply unit to the first main surface. The coating film cleaning process uses a coating film cleaning unit to clean the surface of the coating film. The controller is programmed to perform a curing step during the coating formation process, wherein the curing step, after the coating agent is supplied to the first main surface, heats the substrate via the substrate heating unit to cure the coating. The controller is programmed to perform a sublimation process, which, after the coating cleaning process, sublimates the coating through the sublimation unit. The controller is programmed to also perform a second main surface cleaning process, which cleans the second main surface through a second main surface cleaning unit after the coating formation process. The controller is programmed to start the coating cleaning process after the second main surface cleaning process is completed, or to execute the coating cleaning process in parallel with the second main surface cleaning process. The controller is programmed to perform a protective liquid supply process, which runs in parallel with the second main surface cleaning process before the coating cleaning process begins, supplying the protective liquid from the protective liquid supply unit to the surface of the coating.

13. The substrate processing apparatus according to claim 12, wherein, Also includes: The peripheral cleaning unit cleans the periphery of the second main surface. The controller is programmed to perform a perimeter cleaning process, which cleans the perimeter of the second main surface by means of the perimeter cleaning unit before the curing process begins.

14. A substrate processing apparatus, wherein, include: The substrate holding unit holds the substrate, which has a first main surface and a second main surface opposite to the first main surface, horizontally. The coating agent supply unit supplies a coating agent capable of forming a sublimable coating film covering the first main surface to the first main surface. The coating cleaning unit cleans the surface of the coating. The sublimation unit sublimates the coating film, and The controller controls the substrate holding unit, the coating agent supply unit, the coating film cleaning unit, and the sublimation unit. The controller is programmed to perform a substrate holding process, a coating film formation process, and a coating film cleaning process. The substrate holding process uses the substrate holding unit to hold the substrate horizontally. The coating film formation process forms the coating film by supplying the coating agent from the coating agent supply unit to the first main surface. The coating film cleaning process uses a coating film cleaning unit to clean the surface of the coating film. The substrate processing apparatus further includes a second main surface cleaning unit for cleaning the second main surface and a protective liquid supply unit for supplying a protective liquid to the first main surface to protect the surface of the coated film. The controller is programmed to perform a second main surface cleaning process, which cleans the second main surface through a second main surface cleaning unit after the coating formation process. The controller is programmed to start the coating cleaning process after the second main surface cleaning process is completed, or to execute the coating cleaning process in parallel with the second main surface cleaning process. The controller is programmed to perform a protective liquid supply process, which runs in parallel with the second main surface cleaning process before the coating cleaning process begins, supplying the protective liquid from the protective liquid supply unit to the surface of the coating. The controller is programmed to perform a sublimation process, which sublimates the coated film through the sublimation unit after the coated film cleaning process is completed.

15. The substrate processing apparatus according to claim 12 or 14, wherein, The controller is programmed to perform a first cleaning step in the coating cleaning process, which begins after the second main surface cleaning process is completed, by the coating cleaning unit cleaning the coating.

16. The substrate processing apparatus according to claim 12 or 14, wherein, The controller is programmed to perform a second cleaning process in the coating cleaning process, which is parallel to the second main surface cleaning process, and the coating cleaning unit cleans the surface of the coating.

17. The substrate processing apparatus according to claim 16, wherein, The controller is programmed to terminate the second cleaning process after the second main surface cleaning process is completed.

18. The substrate processing apparatus according to claim 14, wherein, Also includes: The substrate heating unit heats the substrate. The controller is programmed to perform a curing process in the coating film formation process, wherein the curing process heats the substrate by the substrate heating unit to cure the coating film after the coating agent is supplied to the first main surface.

19. The substrate processing apparatus according to claim 18, wherein, Also includes: The peripheral cleaning unit cleans the periphery of the second main surface. The controller is programmed to perform a perimeter cleaning process, which cleans the perimeter of the second main surface by means of the perimeter cleaning unit before the curing process begins.

20. The substrate processing apparatus according to claim 14, wherein, A metallic pattern is formed on the first main surface.

21. The substrate processing apparatus according to claim 12 or 14, wherein, The coated film cleaning unit includes a cleaning fluid supply unit, which supplies cleaning fluid to the first main surface. The controller is programmed to perform a process in the coated film cleaning process of cleaning the surface of the coated film by supplying cleaning fluid from the cleaning fluid supply unit to the first main surface.

22. The substrate processing apparatus according to claim 12 or 14, wherein, The controller is programmed to perform a process of removing the surface layer of the coated film during the coated film cleaning process.

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