An optical random access memory based on the external photoelectric effect and two-dimensional electron gas

Abstract

The present invention discloses an optical random access memory based on external photoelectric effect and two-dimensional electron gas, comprising: a substrate substrate, the interior of the substrate substrate has 2DEG, the substrate substrate is provided with a first metal electrode and a second metal electrode, light is irradiated on a transparent film to generate photoelectrons, and the photoelectrons are driven to gather on an oxide, thereby changing the electron concentration of the two-dimensional electron gas on the oxide surface; unlike a photoresistor, the change in electron concentration is not obtained through the electronic energy level transition of the material itself, so it will not disappear through the recombination of electron-hole pairs, thereby achieving a permanent change in the local resistance of the two-dimensional electron gas on the oxide surface, and completing the data storage function; while the reading of data requires measuring the resistance of the data unit to achieve, and our existing experiments show that the loaded external photoelectrons can be driven out of the two-dimensional electron gas on the oxide surface by applying a negative voltage of about 10V, thereby achieving the data erasure function.

Description

Technical Field

[0001] The invention relates to the technical field of random access memory, in particular to an optical random access memory based on external photoelectric effect and two-dimensional electron gas. Background Art

[0002] Today, there are three typical types of storage devices: magnetic storage, semiconductor storage, and optical storage. Magnetic storage with slow storage speed and high loss is gradually being replaced by semiconductor storage with better performance. In principle, optical storage should have faster storage speed and higher storage density. Read-only optical discs use laser ablation of the organic recording layer, and read data based on the change in the laser reflectivity of the ablated and unablated parts of the recording layer; read-write optical storage uses laser to make the magnetic recording layer undergo a ferromagnetic-paramagnetic phase change, thereby achieving data recording, and reading requires a semiconductor read head; therefore, an optical random access memory based on the external photoelectric effect and two-dimensional electron gas is proposed. Summary of the invention

[0003] The object of the present invention is to provide an optical random access memory based on the external photoelectric effect and the two-dimensional electron gas to solve the problems raised in the above-mentioned background technology.

[0004] To achieve the above-mentioned purpose, the present invention provides the following technical solution: an optical random access memory based on external photoelectric effect and two-dimensional electron gas, comprising: a substrate substrate, the interior of the substrate substrate has 2DEG, a first metal electrode and a second metal electrode are arranged on the substrate substrate, the outsides of the first metal electrode and the second metal electrode 13 are respectively provided with a first wire and a second wire, a transparent medium is arranged above the substrate substrate, a transparent conductive film is formed on the lower surface of the transparent medium, a two-dimensional structure film is formed on the upper surface of the transparent medium, and a third wire is arranged outside the transparent conductive film.

[0005] Preferably, the second metal electrode is in contact with the two-dimensional electron gas to form a Schottky contact or a semi-fixed van der Waals contact as one of the electrically controlled switches, and is the positive electrode for reading data.

[0006] Preferably, the contact mode of the first metal electrode is ohmic contact.

[0007] Preferably, the transparent medium is made of optical glass or resin lens.

[0008] Preferably, the material of the transparent conductive film is ITO, GaP or MoTe2.

[0009] Preferably, when ITO is selected, ITO is prepared by a DC magnetron sputtering method, and when GaP or MoTe2 is selected, a chemical vapor deposition method or a liquid phase stripping method is used to form a film.

[0010] Preferably, the material of the substrate is KTaO3 or SrTiO3.

[0011] Preferably, when KTaO3 is selected as the material of the substrate, the two-dimensional electron gas on the surface of KTaO3 is achieved by ion beam bombardment, and the concentration of the two-dimensional electron gas does not exceed 10 14 cm 3 , and can realize two-dimensional electron gas 10 5 times or more of resistance change.

[0012] Preferably, the first metal electrode and the second metal electrode are both made by direct current magnetron sputtering.

[0013] Compared with the prior art, the present invention has the following beneficial effects:

[0014] The present invention utilizes light to generate photoelectrons on a transparent film, and drives the photoelectrons to gather on an oxide, thereby changing the electron concentration of the two-dimensional electron gas on the oxide surface. Unlike photoresistors, this change in electron concentration is not obtained through the material's own electronic energy level transition, so it will not disappear through the recombination of electron-hole pairs, thereby achieving a permanent change in the local resistance of the two-dimensional electron gas on the oxide surface, completing the data storage function. Data reading requires measuring the resistance of the data unit to achieve this. Our existing experiments have shown that this loaded external photoelectron can be driven out of the two-dimensional electron gas on the oxide surface by applying a negative voltage of about 10V, thereby achieving the data erasure function. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 The schematic diagram of the principle of the optical random access memory based on the external photoelectric effect and the two-dimensional electron gas of the present invention.

[0016] In the figure: 10, substrate; 11, first wire; 12, first metal electrode; 13, second metal electrode; 14, second wire; 15, 2DEG; 20, transparent medium; 21, transparent conductive film; 22, third wire; 23, two-dimensional structure film. DETAILED DESCRIPTION

[0017] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0018] See also Figure 1 , the present invention provides a technical solution:

[0019] Example 1

[0020] An optical random access memory based on the external photoelectric effect and two-dimensional electron gas comprises: a substrate 10, wherein the substrate 10 has a 2DEG 15 inside, a first metal electrode 12 and a second metal electrode 13 are arranged on the substrate 10, and a first wire 11 and a second wire 14 are arranged outside the first metal electrode 12 and the second metal electrode 13 respectively, a transparent medium 20 is arranged above the substrate 10, a transparent conductive film 21 is formed on the lower surface of the transparent medium 20, a two-dimensional structure film 23 is formed on the upper surface of the transparent medium 20, and a third wire 22 is arranged outside the transparent conductive film 21.

[0021] Specifically, the second metal electrode 13 forms a Schottky contact with the two-dimensional electron gas, and is a positive electrode for reading data.

[0022] Specifically, the contact mode of the first metal electrode 12 is ohmic contact, and it is used as a -10V voltage electrode for data erasing.

[0023] Specifically, the transparent medium 20 is made of optical glass.

[0024] Specifically, the material of the transparent conductive film 21 is ITO.

[0025] Specifically, when ITO is selected, ITO is prepared by a DC magnetron sputtering method.

[0026] Specifically, the material of the base substrate 10 is KTaO 3 .

[0027] Specifically, when KTaO3 is selected as the material of the substrate 10, the two-dimensional electron gas on the surface of KTaO3 is realized by ion beam bombardment, and the concentration of the two-dimensional electron gas does not exceed 10 14 cm 3 .

[0028] Specifically, the first metal electrode 12 and the second metal electrode 13 are both made by direct current magnetron sputtering.

[0029] Example 2

[0030] An optical random access memory based on the external photoelectric effect and two-dimensional electron gas comprises: a substrate 10, wherein the substrate 10 has a 2DEG 15 inside, a first metal electrode 12 and a second metal electrode 13 are arranged on the substrate 10, and a first wire 11 and a second wire 14 are arranged outside the first metal electrode 12 and the second metal electrode 13 respectively, a transparent medium 20 is arranged above the substrate 10, a transparent conductive film 21 is formed on the lower surface of the transparent medium 20, a two-dimensional structure film 23 is formed on the upper surface of the transparent medium 20, and a third wire 22 is arranged outside the transparent conductive film 21.

[0031] Specifically, the contact mode of the second metal electrode 13 is van der Waals contact as an electrically controlled switch, and is the positive electrode for reading data.

[0032] Specifically, the contact mode of the first metal electrode 12 is ohmic contact, and it is used as a -10V voltage electrode for data erasing.

[0033] Specifically, the transparent medium 20 is made of a resin lens.

[0034] Specifically, the material of the transparent conductive film 21 is GaP or MoTe2.

[0035] Specifically, when GaP or MoTe2 is selected, chemical vapor deposition or liquid phase exfoliation is used to form the film.

[0036] Specifically, the material of the base substrate 10 is SrTiO 3 .

[0037] Specifically, the first metal electrode 12 and the second metal electrode 13 are both made by direct current magnetron sputtering.

[0038] In summary: the present invention utilizes light to generate photoelectrons on a transparent film, and drives the photoelectrons to gather on an oxide, thereby changing the electron concentration of the two-dimensional electron gas on the oxide surface; unlike photoresistors, the change in electron concentration is not obtained through the material's own electronic energy level transition, so it will not disappear through the recombination of electron-hole pairs, thereby achieving a permanent change in the local resistance of the two-dimensional electron gas on the oxide surface, completing the data storage function; and data reading requires measuring the resistance of the data unit to achieve it. Our existing experiments have shown that this loaded external photoelectron can be driven out of the two-dimensional electron gas on the oxide surface by applying a negative voltage of about 10V, thereby achieving the data erasing function.

[0039] Parts not involved in the present invention are the same as the prior art or can be implemented by the prior art. Although the embodiments of the present invention have been shown and described, it is understood by those skilled in the art that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of the present invention, and the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. An optical random access memory based on the external photoelectric effect and two-dimensional electron gas, characterized in that: include: A base substrate (10), wherein the base substrate (10) has a 2DEG (15) inside, a first metal electrode (12) and a second metal electrode (13) are arranged on the base substrate (10), and a first wire (11) and a second wire (14) are arranged outside the first metal electrode (12) and the second metal electrode (13), respectively; a transparent medium (20) is arranged above the base substrate (10), a transparent conductive film (21) is formed on the lower surface of the transparent medium (20), a two-dimensional structure film (23) is formed on the upper surface of the transparent medium (20), and a third wire (22) is arranged outside the transparent conductive film (21); the contact mode of the second metal electrode (13) is to form a Schottky contact or a semi-fixed van der Waals contact with a two-dimensional electron gas as one of the electrically controlled switches, and is a positive electrode for reading data; the contact mode of the first metal electrode (12) is an ohmic contact, and is used as a -10V voltage electrode for data erasing.

2. An optical random access memory based on the external photoelectric effect and two-dimensional electron gas according to claim 1, characterized in that: The material of the transparent medium (20) is one of optical glass and resin lens.

3. The optical random access memory based on the external photoelectric effect and the two-dimensional electron gas according to claim 1, characterized in that: The material of the transparent conductive film (21) is ITO, GaP or MoTe2.

4. The optical random access memory based on the external photoelectric effect and the two-dimensional electron gas according to claim 3, characterized in that: When ITO is selected, ITO is prepared by DC magnetron sputtering. When GaP or MoTe2 is selected, chemical vapor deposition and liquid phase stripping are used to form the film.

5. The optical random access memory based on the external photoelectric effect and the two-dimensional electron gas according to claim 1, characterized in that: The material of the base substrate (10) is one of KTaO3 and SrTiO3.

6. The optical random access memory based on the external photoelectric effect and the two-dimensional electron gas according to claim 5, characterized in that: When KTaO3 is selected as the material of the substrate (10), the two-dimensional electron gas on the surface of KTaO3 is realized by ion beam bombardment, and the concentration of the two-dimensional electron gas does not exceed 10 14 cm 3 , and can realize two-dimensional electron gas 10 5 times or more of resistance change.

7. The optical random access memory based on the external photoelectric effect and the two-dimensional electron gas according to claim 1, characterized in that: The first metal electrode (12) and the second metal electrode (13) are both manufactured by direct current magnetron sputtering.

Images