A heat dissipation test method and system for self-heating effect of semiconductor device

Abstract

The present invention provides a heat dissipation test method and system for the self-heating effect of a semiconductor device. A double-pulse measurement method controls the heat dissipation by changing the double-pulse interval duration (cooling duration). By monitoring the correlation between the output current of the semiconductor device and the double-pulse interval duration, the current change caused by the residual heat of the self-heating effect is observed in the time domain, and the actual heat dissipation situation of the device can be accurately characterized. Furthermore, when collecting the voltage value, the voltage detection value corresponding to the time period of 0 to 100ns of the pulse signal is collected, which is equivalent to the voltage detection value collected when the self-heating effect just begins. The heat generated by the self-heating effect at the beginning has a very weak influence on the heat dissipation test and can be ignored. Therefore, the influence of the self-heating effect on the heat dissipation test process can be overcome, and the accuracy and precision of the heat dissipation test can be further improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor device measurement, and in particular relates to a heat dissipation testing method and system for the self-heating effect of a semiconductor device. Background Art

[0002] Heat dissipation is one of the key factors limiting the performance of semiconductor devices and circuits. Under the working conditions of high-speed applications, when specific dynamic signals are applied, the device may experience self-heating and incomplete cooling during operation, causing heat accumulation. Therefore, it is necessary to test the complete heat dissipation process of the device to provide workload guidance.

[0003] The heat generated by the self-heating effect causes the operating temperature in the channel to increase and the drive current to decrease. The inherent self-heating characteristics of the device seriously affect the performance and stability, so the self-heating effect will affect the measurement and evaluation of the device cooling stage. Since the self-heating effect occurs in a short period of time, and the measurement capability of conventional semiconductor parameter analyzers is limited, the drain current will increase significantly with the device temperature during the measurement process. Therefore, the traditional DC test method cannot accurately characterize the heat dissipation process of the device and cannot ensure the heat dissipation test accuracy of the device. Summary of the invention

[0004] In view of the problems existing in the prior art, an embodiment of the present invention provides a heat dissipation testing method for the self-heating effect of a semiconductor device, which is used to solve the technical problem that the heat dissipation effect of the self-heating effect of a semiconductor device cannot be tested with guaranteed test accuracy in the prior art.

[0005] The present invention provides a heat dissipation test method for a semiconductor device self-heating effect, the method comprising:

[0006] Using a driving device to send multiple groups of double pulse signals to the semiconductor device to be tested;

[0007] Each time a pulse signal is sent, a detection device is used to sequentially collect voltage detection values ​​corresponding to a preset time period of each pulse signal; the preset time period is 0 to 100 ns, and the voltage detection value is a drain-source voltage of the semiconductor device to be tested;

[0008] Determining a reference leakage current of the semiconductor device to be tested based on the voltage detection value and the internal resistance of the detection device;

[0009] If it is determined that the reference leakage current is the required current, then determining the leakage current difference corresponding to each group of double pulse signals based on the reference leakage current of the semiconductor device to be tested;

[0010] A heat dissipation curve is determined based on the leakage current difference and the double-pulse interval duration, and the heat dissipation curve represents the heat dissipation performance of the self-heating effect of the semiconductor device to be tested.

[0011] In the above scheme, the interval duration of each group of double pulse signals increases successively.

[0012] In the above scheme, the method further comprises:

[0013] The pulse width of the double pulse signal is determined based on the time required for the semiconductor device to heat itself to a steady state.

[0014] In the above solution, the step of using a driving device to send multiple sets of double pulse signals to the semiconductor device under test includes:

[0015] When the driving device outputs a continuous pulse periodic signal, the current group of double pulse signals is the first two pulse signals in the current continuous pulse periodic signal;

[0016] Control the current continuous pulse cycle signal to shut down, and when the semiconductor device cools to room temperature, control the driving device to continue to output the next continuous pulse cycle signal of the current continuous pulse cycle signal; the next group of double pulse signals of the current group of double pulse signals are the first two pulse signals in the next continuous pulse cycle signal of the current continuous pulse cycle signal.

[0017] In the above solution, the step of using a driving device to send multiple sets of double pulse signals to the semiconductor device under test includes:

[0018] When the driving device outputs a double pulse periodic signal, the current group of double pulse signals is the current double pulse periodic signal;

[0019] Control the current double pulse cycle signal to shut down, and when the semiconductor device cools down to normal temperature, control the driving device to continue to output the next double pulse cycle signal of the current double pulse cycle signal; the next group of double pulse signals of the current group of double pulse signals is the next double pulse cycle signal.

[0020] In the above solution, the step of determining the reference leakage current of the semiconductor device to be tested based on the voltage detection value and the internal resistance of the detection device includes:

[0021] According to the formula Determine the reference leakage current I of the semiconductor device to be tested d ;in,

[0022] The V scope is the voltage detection value, and R1 is the internal resistance of the detection device.

[0023] In the above solution, determining the reference leakage current as the required current includes:

[0024] Based on the formula V d =2V source -(R1+R2)·I dDetermine the drain-source voltage V of the semiconductor device under test d ;

[0025] If the drain-source voltage is consistent with the preset operating voltage, the reference drain current is determined to be the required current; wherein,

[0026] The V source is the output voltage of the driving device, R1 is the internal resistance of the detection device, R2 is the internal resistance of the driving device, and I d is the reference leakage current.

[0027] In the above solution, if it is determined that the reference leakage current is not the required current, the method further includes:

[0028] Determining a fitting curve between the reference drain current and the drain-source voltage;

[0029] Determining the slope value of the fitting curve;

[0030] The reference leakage current is determined based on a preset operating voltage and the slope value.

[0031] In the above scheme, the method further includes:

[0032] When the voltage detection values ​​corresponding to the preset time periods of each pulse signal are collected in sequence by using the detection equipment, if it is determined that the voltage detection values ​​corresponding to the same group of double pulse signals are equal, the collection is stopped.

[0033] A second aspect of the present invention provides a heat dissipation test system for the self-heating effect of a semiconductor device, the system comprising: a driving device, a semiconductor device to be tested, and a detection device;

[0034] The driving device is used to send at least one set of double pulse signals to the semiconductor device to be tested;

[0035] The detection device is used to collect the voltage detection value corresponding to the preset time period of each pulse signal in sequence each time a pulse signal is sent; the preset time period is 0 to 100ns, and the voltage detection value is the drain-source voltage of the semiconductor device to be tested; the reference leakage current of the semiconductor device to be tested is determined based on the voltage detection value and the internal resistance of the detection device; if the reference leakage current is determined to be the required current, the leakage current difference corresponding to each group of double pulse signals is determined based on the reference leakage current of the semiconductor device to be tested; the heat dissipation curve is determined based on the leakage current difference and the double pulse interval duration, and the heat dissipation curve characterizes the heat dissipation performance of the self-heating effect of the semiconductor device to be tested.

[0036] In the above solution, the output terminal of the driving device is connected to the input electrode and the ground terminal of the semiconductor device to be tested respectively through a first coaxial cable;

[0037] The input end of the detection device is connected to the output electrode of the semiconductor device to be tested and the ground end respectively through a second coaxial cable;

[0038] The trigger end of the detection device is connected to the input end of the drive device through a third coaxial cable.

[0039] In the above scheme, the semiconductor device to be tested includes: a three-electrode MOS device or a four-electrode MOS device;

[0040] When the semiconductor device to be tested is a three-electrode MOS device, the input electrode is an electrode formed by short-circuiting a gate electrode and a drain electrode of the semiconductor device to be tested; and the output electrode is a source electrode of the semiconductor device to be tested;

[0041] When the semiconductor device to be tested is a four-electrode MOS device, the input electrode is an electrode where the gate electrode and the drain electrode of the semiconductor device to be tested are short-circuited together; the output electrode is an electrode where the source electrode and the body electrode of the semiconductor device to be tested are short-circuited together.

[0042] In the above scheme, the short circuit is any of the following:

[0043] Design metal connections and probe connections during package bonding and integrated circuit manufacturing.

[0044] In the above solution, one end of the first coaxial cable, one end of the second coaxial cable and one end of the third coaxial cable are respectively provided with connectors;

[0045] The other end of the first coaxial cable, the other end of the second coaxial cable and the other end of the third coaxial cable are respectively provided with a connector; the connector includes any one of the following:

[0046] N connector, SMA connector, SMB connector, SMP connector, SSMC connector, MMCX connector, BNC connector, TNC connector, 2.92 RF connector and 2.4 RF connector.

[0047] In the above solution, the characteristic impedances of the first coaxial cable, the second coaxial cable and the third coaxial cable match the internal resistance of the driving device and the internal resistance of the detection device.

[0048] In the above scheme, the detection device is specifically used for:

[0049] According to the formula Determine the reference leakage current I of the semiconductor device to be tested d ;

[0050] Based on the formula V d =2Vsource -(R1+R2)·I d Determine the drain-source voltage V of the semiconductor device under test d ;

[0051] If the drain-source voltage is consistent with the preset operating voltage, the reference drain current is determined to be the required current; wherein,

[0052] The V scope is the voltage detection value, R1 is the internal resistance of the detection device, and V source is the output voltage of the driving device, R2 is the internal resistance of the driving device, and I d is the reference leakage current.

[0053] The present invention provides a method and system for testing the heat dissipation of the self-heating effect of a semiconductor device. The method comprises: using a driving device to send multiple groups of double pulse signals to the semiconductor device to be tested; each time a pulse signal is sent, using a detection device to sequentially collect voltage detection values ​​corresponding to a preset time period of each pulse signal; the preset time period is 0 to 100 ns, and the voltage detection value is the drain-source voltage of the semiconductor device to be tested; based on the voltage detection value and the internal resistance of the detection device, a reference leakage current of the semiconductor device to be tested is determined; if the reference leakage current is determined to be the required current, a leakage current difference corresponding to each group of double pulses is determined based on the reference leakage current of the semiconductor device to be tested; a heat dissipation curve is determined based on the leakage current difference and the double pulse interval time length, and the heat dissipation curve Characterize the heat dissipation performance of the self-heating effect of the semiconductor device to be tested; in this way, the double-pulse measurement method controls the heat dissipation by changing the double-pulse interval duration (cooling duration), and by monitoring the correlation between the output current of the semiconductor device and the double-pulse interval duration, the current change caused by the residual heat of the self-heating effect is observed in the time domain, thereby accurately characterizing the actual situation of the device heat dissipation; and because when collecting the voltage value, the voltage detection value corresponding to the 18-22ns time period of the pulse signal is collected, which is equivalent to the voltage detection value collected when the self-heating effect just begins, the heat generated by the self-heating effect at the beginning has a very weak effect on the heat dissipation test and can be ignored, thereby overcoming the influence of the self-heating effect on the heat dissipation test process, and further improving the accuracy and precision of the heat dissipation test. BRIEF DESCRIPTION OF THE DRAWINGS

[0054] Various other advantages and benefits will become apparent to those of ordinary skill in the art by reading the detailed description of the preferred embodiments below. The accompanying drawings are only for the purpose of illustrating the preferred embodiments and are not to be considered as limiting the present invention. Moreover, the same reference symbols are used throughout the accompanying drawings to represent the same components. In the accompanying drawings:

[0055] Figure 1A schematic diagram of the overall structure of an ultrafast pulse test system provided by an embodiment of the present invention;

[0056] Figure 2 A schematic flow chart of a heat dissipation testing method for a semiconductor device self-heating effect provided by an embodiment of the present invention;

[0057] Figure 3 A schematic diagram of a double pulse heat dissipation test for a semiconductor device provided by an embodiment of the present invention;

[0058] Figure 4 A schematic diagram of a double pulse heat dissipation test for a semiconductor device provided by an embodiment of the present invention;

[0059] Figure 5 The leakage current difference and the double pulse interval duration provided in the embodiment of the present invention fit the heat dissipation curve. DETAILED DESCRIPTION

[0060] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0061] This embodiment provides a heat dissipation test method for the self-heating effect of a semiconductor device, which is applied in an ultra-pulse test system. In order to better understand the technical solution of this application, the specific structure of the ultra-pulse test system is first introduced here. Figure 1 As shown, the system includes:

[0062] A driving device 1, a semiconductor device to be tested 2, a detection device 3, a first coaxial cable 4, a second coaxial cable 5 and a third coaxial cable 6; wherein the semiconductor device to be tested 2 can be any device with a self-heating effect, such as a four-electrode MOS (metal oxide semiconductor) device and a three-electrode MOS (metal oxide semiconductor) device. The driving device 1 can be an arbitrary waveform generator, and the detection device 3 can be an oscilloscope.

[0063] Specifically, the driving device 1 is used to send at least one set of double pulse signals to the semiconductor device 2 under test;

[0064] The detection device 3 is used to collect the voltage detection value corresponding to the preset time period of each pulse signal in sequence each time a pulse signal is sent; the preset time period is 0 to 100ns, preferably 18 to 22ns, and the voltage detection value is the drain-source voltage of the semiconductor device to be tested; based on the voltage detection value and the internal resistance of the detection device, the reference leakage current of the semiconductor device to be tested is determined; if the reference leakage current is determined to be the required current, the leakage current difference corresponding to each group of double pulse signals is determined based on the reference leakage current of the semiconductor device to be tested; based on the leakage current difference and the double pulse interval length, a heat dissipation curve is determined, and the heat dissipation curve characterizes the heat dissipation performance of the self-heating effect of the semiconductor device.

[0065] The detection device 3 is specifically used for:

[0066] According to the formula Determine the reference leakage current I of the semiconductor device to be tested d ;

[0067] Based on the formula V d =2V source -(R1+R2)·I d Determine the drain-source voltage V of the semiconductor device under test d ;

[0068] If the drain-source voltage is consistent with the preset operating voltage, the reference drain current is determined to be the required current; wherein,

[0069] The V scope is the voltage detection value, R1 is the internal resistance of the detection device, and V source is the output voltage of the driving device, R2 is the internal resistance of the driving device, and I d is the reference leakage current.

[0070] The signal output end of the driving device 1 is connected to the signal input electrode 102 and the ground terminal 104 of the semiconductor device 2 under test through the first coaxial cable 4; the signal input end of the detection device 3 is connected to the signal output electrode 103 and the ground terminal 104 of the semiconductor device 2 under test through the second coaxial cable 5.

[0071] Wherein, when the semiconductor device to be tested is a three-electrode MOS device, the signal input electrode 102 is an electrode where the gate electrode and the drain electrode of the semiconductor device to be tested 2 are short-circuited together; the signal output electrode 103 is a source electrode of the semiconductor device to be tested 2;

[0072] When the semiconductor device 2 to be tested is a four-electrode MOS device, the signal input electrode 102 refers to the electrode where the gate electrode and the drain electrode of the semiconductor device to be tested are short-circuited together; the signal output electrode 103 refers to the electrode where the source electrode and the body electrode of the semiconductor device to be tested are short-circuited together; the short-circuiting method can be any one of the following: packaging wire connection, metal connection designed during integrated circuit manufacturing, and probe connection.

[0073] Furthermore, the trigger end of the driving device 1 is connected to the signal input end of the detection device 3 via a third coaxial cable 6 .

[0074] In this embodiment, one end of the first coaxial cable, one end of the second coaxial cable, and one end of the third coaxial cable are respectively provided with connectors;

[0075] The other end of the first coaxial cable, the other end of the second coaxial cable and the other end of the third coaxial cable are respectively provided with a connector; the connector includes any one of the following:

[0076] N connector, SMA connector, SMB connector, SMP connector, SSMC connector, MMCX connector, BNC connector, TNC connector, 2.92 RF connector and 2.4 RF connector.

[0077] Generally speaking, a BNC connector is used to directly connect to a test device (detection device 3 or driving device 1 ), and an SMA connector is used to connect to the semiconductor device 2 to be tested.

[0078] Then, based on the above-mentioned ultra-pulse test system, the heat dissipation of the self-heating effect of the semiconductor device is tested, such as Figure 2 As shown, the test method includes the following steps:

[0079] S210, using a driving device to send at least one set of double pulse signals to the semiconductor device to be tested;

[0080] In this embodiment, before the test, the rising edge of the driving device is set to be in the nanosecond level, the pulse width is set to be above microseconds, and the amplitude is set to match the operating voltage of the semiconductor device to be tested.

[0081] Set the storage depth of the detection equipment to more than 1M, the sampling time interval to less than nanoseconds, the trigger mode to edge trigger, and the trigger level to 1 / 2 of the amplitude.

[0082] At the beginning of the test, the driver sends at least one set of double pulse signals to the semiconductor device under test; the double pulse interval length in each set of pulse signals is increasing. In practical applications, the growth rate of the double pulse interval length in each transmission cycle can be determined based on actual conditions; generally speaking, the smaller the growth rate of the interval length, the better.

[0083] In this embodiment, the double pulse signal output by the driving device can be sent in a continuous pulse mode or a double pulse mode. Then, the driving device is used to send multiple sets of double pulse signals to the semiconductor device under test, including:

[0084] When the driving device outputs a continuous pulse periodic signal, the current group of double pulse signals is the first two pulse signals in the current continuous pulse periodic signal;

[0085] Control the current continuous pulse cycle signal to shut down. When the semiconductor device cools to room temperature (completely cooled), control the driving device to continue to output the next continuous pulse cycle signal of the current continuous pulse cycle signal; the next group of double pulse signals of the current group of double pulse signals are the first two pulse signals in the next continuous pulse cycle signal of the current continuous pulse cycle signal.

[0086] That is, when the driving device outputs a continuous pulse periodic signal, only the first two pulse signals in the continuous pulse signal are selected as double pulse signals in each sending cycle.

[0087] In an optional embodiment, a driving device is used to send a plurality of groups of double pulse signals to the semiconductor device under test, including:

[0088] When the driving device outputs a double pulse periodic signal, the current group of double pulse signals is the current double pulse periodic signal;

[0089] Control the current double pulse cycle signal to shut down. When the semiconductor device cools to room temperature (completely cooled), control the driving device to continue to output the next double pulse cycle signal of the current double pulse cycle signal; the next group of double pulse signals of the current group of double pulse signals is the next double pulse cycle signal.

[0090] That is, when the driving device outputs a double-pulse period signal, each sending cycle directly uses the double-pulse period signal as the double-pulse signal.

[0091] Specifically, the driving device outputs a dual pulse signal to the signal input electrode of the semiconductor device to be tested. At the same time, the driving device outputs a Sync synchronous fixed pulse signal as a system trigger pulse directly connected to the detection device to realize weak signal detection.

[0092] When considering the heat dissipation process, a double pulse signal is applied to the drain electrode and the gate electrode of the semiconductor device to be tested, respectively, and the heat dissipation is controlled by changing the interval cooling time (the interval length of the double pulses), thereby utilizing two consecutive pulses with different interval lengths to monitor the heat dissipation process of the semiconductor device to be tested.

[0093] For each set of double pulse signals, the first pulse signal is used to stimulate the leakage current generated when the self-heating of the semiconductor device under test just starts, and is used to heat the semiconductor device under test. The conduction time is long enough to allow the device to be fully heated and reach a steady-state temperature of self-heating equilibrium.

[0094] The second pulse signal is used to stimulate the leakage current generated when the semiconductor device just starts to re-heat after cooling. The leakage current difference between the two leakage currents reflects the heat dissipation of the device after the interval.

[0095] Since the self-heating in this embodiment has just started to have a very weak impact on the entire heat dissipation process, this impact can be ignored, so the test accuracy of the heat dissipation process can be ensured.

[0096] When the double-pulse interval is long enough, the first pulse signal causes the entire heat generated by the self-heating effect in the on-state of the semiconductor device under test to be dissipated, and the semiconductor device under test is completely cooled to the ambient temperature; when the second pulse signal arrives, the leakage current reaches its peak value without being affected by self-heating.

[0097] It can be understood that if the interval time Δt between the double pulse signals is small, the residual temperature of the self-heating stimulated by the first pulse signal is not fully dissipated, and the leakage current difference ΔI d will be smaller, as shown below Figure 3 If the interval time Δt between the double pulse signals is large, the residual temperature of the self-heating stimulated by the first pulse signal will be fully dissipated, then the leakage current difference ΔI d will be larger, as shown below Figure 4 shown.

[0098] S211, each time a pulse signal is sent, using a detection device to sequentially collect voltage detection values ​​corresponding to a preset time period of each pulse signal; the preset time period is 0 to 100 ns, and the voltage detection value is a drain-source voltage of the semiconductor device to be tested;

[0099] In order to quickly collect the voltage detection value and avoid the influence of the self-heating effect of the semiconductor device on the heat dissipation process, each time a pulse signal is sent, the detection equipment is used to collect the voltage detection value corresponding to the preset time period of each pulse signal in turn; the preset time period is 0 to 100ns, preferably 18 to 22ns, and the voltage detection value is the drain-source voltage of the semiconductor device to be tested.

[0100] Specifically, within a preset time period, multiple voltage detection values ​​may be collected based on a collection frequency, and a final voltage detection value may be an average of the multiple voltage detection values ​​within the preset time period.

[0101] It is worth noting that when the detection device is used to sequentially collect the voltage detection values ​​corresponding to the preset time periods of each pulse signal, if it is determined that the voltage detection values ​​corresponding to the same group of double pulse signals are equal, the collection is stopped.

[0102] For example, for any set of double pulse signals, when the voltage detection value collected when the first pulse signal is sent is 1V, and when the voltage detection value collected when the second pulse signal is sent is also 1V, the collection will be stopped at this time.

[0103] Here, for any set of double pulse signals, the pulse width of the double pulse signal needs to be determined based on the time required for the semiconductor device to self-heat to a steady state. Generally speaking, the pulse width is greater than or equal to 1 μs.

[0104] S212, determining a reference leakage current of the semiconductor device to be tested based on the voltage detection value and the internal resistance of the detection device; if the reference leakage current is determined to be the required current, determining a leakage current difference corresponding to each group of double pulses based on the reference leakage current of the semiconductor device to be tested;

[0105] After the voltage detection value is collected, it is necessary to determine the reference leakage current of the semiconductor device to be tested based on the voltage detection value and the internal resistance of the detection equipment.

[0106] In one embodiment, determining a reference leakage current of a semiconductor device to be tested based on a voltage detection value and an internal resistance of a detection device includes:

[0107] According to the formula Determine the reference leakage current I of the semiconductor device under test d ;in,

[0108] V scope is the voltage detection value, and R1 is the internal resistance of the detection device.

[0109] After obtaining the reference leakage current, it is necessary to further verify whether the reference leakage current is the required current. Therefore, in one implementation, determining whether the reference leakage current is the required current includes:

[0110] Based on the formula V d =2V source -(R1+R2)·I d Determine the drain-source voltage V of the semiconductor device under test d ;

[0111] If the drain-source voltage is consistent with the preset operating voltage, the reference drain current is determined to be the required current; wherein,

[0112] V source is the output voltage of the driving device, R1 is the internal resistance of the detection device, R2 is the internal resistance of the driving device, I dis the reference leakage current.

[0113] For example, assuming that the operating voltage is 5V, the drain-source voltage determined by the above formula is also 5V, then the reference drain current is determined to be the required current. If the drain-source voltage determined by the above formula is 4.9V, then the reference drain current is determined to be the invalid current.

[0114] If all reference leakage currents are not the required currents after acquisition, the method further includes:

[0115] determining a fitting curve between a reference drain current and a drain-source voltage;

[0116] Determine the slope value of the fitted curve;

[0117] A reference leakage current is determined based on a preset operating voltage and a slope value.

[0118] For example, assuming the operating voltage is 5V, and according to the formula V d =2V source -(R1+R2)·I d The calculated drain-source voltage is 4.9V, 5.1V, etc.; then the leakage current and the corresponding drain-source voltage can be fitted to obtain a fitting curve between the reference leakage current and the drain-source voltage; then the slope value of the fitting curve is determined, and the operating voltage is divided by the slope value to obtain the final effective reference leakage current.

[0119] After the effective reference leakage current is determined, for each group of double pulse signals, the leakage current difference corresponding to the group of double pulse signals is determined.

[0120] That is, for any set of double pulse signals, assuming that the reference leakage current corresponding to the first pulse signal is I d1 , the reference leakage current corresponding to the second pulse signal is I d2 , then the leakage current difference is ΔI d =I d1 -I d2 .

[0121] In this way, after the acquisition is completed, each group of double pulse signals corresponds to a leakage current difference.

[0122] S213, determining a heat dissipation curve based on the leakage current difference and the double-pulse interval duration, wherein the heat dissipation curve represents the heat dissipation performance of the semiconductor device due to the self-heating effect.

[0123] Then, the heat dissipation curve is fitted based on the leakage current difference and the corresponding double pulse interval time. The heat dissipation curve represents the heat dissipation performance of the self-heating effect of the semiconductor device. The heat dissipation curve is determined as follows Figure 5 shown.

[0124] This embodiment performs heat dissipation tests on semiconductor devices of different sizes. Figure 5 middle, It shows the heat dissipation curve corresponding to the semiconductor device with a gate length of 2μm. It shows the heat dissipation curve corresponding to the semiconductor device with a gate length of 3μm. It shows the heat dissipation curve corresponding to a semiconductor device with a gate length of 4 μm.

[0125] The heat dissipation curve can completely characterize the recovery of the degradation current parameters of the device during the heat dissipation stage during the heat dissipation process, and thus can provide guidance for the workload of the semiconductor device based on the heat dissipation curve.

[0126] The heat dissipation test method for the self-heating effect of a semiconductor device provided in this embodiment can bring at least the following beneficial effects:

[0127] The present invention provides a method and system for testing the heat dissipation of the self-heating effect of a semiconductor device. The method comprises: using a driving device to send at least one group of double pulse signals to the semiconductor device to be tested; each time a pulse signal is sent, using a detection device to sequentially collect voltage detection values ​​corresponding to a preset time period of each pulse signal; the preset time period is 0 to 100 ns, and the voltage detection value is the drain-source voltage of the semiconductor device to be tested; based on the voltage detection value and the internal resistance of the detection device, a reference leakage current of the semiconductor device to be tested is determined; if the reference leakage current is determined to be the required current, a leakage current difference corresponding to each group of double pulses is determined based on the reference leakage current of the semiconductor device to be tested; a heat dissipation curve is determined based on the leakage current difference and the double pulse interval time length, and the heat dissipation curve is determined based on the leakage current difference and the double pulse interval time length. The curve characterizes the heat dissipation performance of the self-heating effect of the semiconductor device; in this way, the double-pulse measurement method controls the heat dissipation by changing the double-pulse interval duration (cooling duration), and by monitoring the correlation between the output current of the semiconductor device and the double-pulse interval duration, the current change caused by the residual heat of the self-heating effect is observed in the time domain, thereby accurately characterizing the actual situation of the device heat dissipation; and because when collecting the voltage value, the voltage detection value corresponding to the 18-22ns time period of the pulse signal is collected, which is equivalent to the voltage detection value collected when the self-heating effect just begins, the heat generated by the self-heating effect at the beginning has a very weak effect on the heat dissipation test and can be ignored, thereby overcoming the influence of the self-heating effect on the heat dissipation test process, and further improving the accuracy and precision of the heat dissipation test.

[0128] The above description is only a preferred embodiment of the present invention and is not intended to limit the protection scope of the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A heat dissipation test method for the self-heating effect of a semiconductor device, characterized in that: The method comprises: Using a driving device to send at least one set of double pulse signals to the semiconductor device to be tested; Each time a pulse signal is sent, a detection device is used to sequentially collect voltage detection values ​​corresponding to a preset time period of each pulse signal; the preset time period is 0 to 100 ns, and the voltage detection value is a drain-source voltage of the semiconductor device to be tested; Determining a reference leakage current of the semiconductor device to be tested based on the voltage detection value and the internal resistance of the detection device; If it is determined that the reference leakage current is the required current, then determining the leakage current difference corresponding to each group of double pulse signals based on the reference leakage current of the semiconductor device to be tested; A heat dissipation curve is determined based on the leakage current difference and the double pulse interval duration, wherein the heat dissipation curve represents the heat dissipation performance of the self-heating effect of the semiconductor device under test; wherein the interval duration of each group of double pulse signals increases in sequence.

2. The method according to claim 1, characterized in that The method further comprises: The pulse width of the double pulse signal is determined based on the time required for the semiconductor device to heat itself to a steady state.

3. The method according to claim 1, characterized in that The method of using a driving device to send at least one set of double pulse signals to the semiconductor device to be tested comprises: When the driving device outputs a continuous pulse periodic signal, the current group of double pulse signals is the first two pulse signals in the current continuous pulse periodic signal; Control the current continuous pulse cycle signal to shut down, and when the semiconductor device cools to room temperature, control the driving device to continue to output the next continuous pulse cycle signal of the current continuous pulse cycle signal; the next group of double pulse signals of the current group of double pulse signals are the first two pulse signals in the next continuous pulse cycle signal of the current continuous pulse cycle signal.

4. The method according to claim 1, characterized in that The method of using a driving device to send at least one set of double pulse signals to the semiconductor device to be tested comprises: When the driving device outputs a double pulse periodic signal, the current group of double pulse signals is the current double pulse periodic signal; Control the current double pulse cycle signal to turn off, and when the semiconductor device cools to room temperature, control the driving device to continue to output the next double pulse cycle signal of the current double pulse cycle signal; the next group of double pulse signals of the current group of double pulse signals is the next double pulse cycle signal.

5. The method according to claim 1, characterized in that The step of determining the reference leakage current of the semiconductor device to be tested based on the voltage detection value and the internal resistance of the detection device comprises: According to the formula Determining a reference leakage current of the semiconductor device under test ;in, Said is the voltage detection value, the is the internal resistance of the detection device.

6. The method according to claim 1, characterized in that The determining that the reference leakage current is a required current includes: Based on the formula Determine the drain-source voltage of the semiconductor device under test ; If the drain-source voltage is consistent with the preset operating voltage, the reference drain current is determined to be the required current; wherein, Said is the output voltage of the driving device, is the internal resistance of the detection device, is the internal resistance of the driving device, is the reference leakage current.

7. The method according to claim 1, characterized in that The method further comprises: When the voltage detection values ​​corresponding to the preset time periods of each pulse signal are collected in sequence by using the detection equipment, if it is determined that the voltage detection values ​​corresponding to the same group of double pulse signals are equal, the collection is stopped.

8. A heat dissipation test system for the self-heating effect of a semiconductor device, characterized in that: The system comprises: a driving device, a semiconductor device to be tested and a testing device; The driving device is used to send at least one set of double pulse signals to the semiconductor device to be tested; The detection device is used to collect voltage detection values ​​corresponding to preset time periods of each pulse signal in sequence each time a pulse signal is sent; the preset time period is 0 to 100 ns, and the voltage detection value is the drain-source voltage of the semiconductor device to be tested; a reference leakage current of the semiconductor device to be tested is determined based on the voltage detection value and the internal resistance of the detection device; if the reference leakage current is determined to be the required current, a leakage current difference corresponding to each group of double pulse signals is determined based on the reference leakage current of the semiconductor device to be tested; A heat dissipation curve is determined based on the leakage current difference and the double pulse interval duration, wherein the heat dissipation curve represents the heat dissipation performance of the self-heating effect of the semiconductor device under test; wherein the interval duration of each group of double pulse signals increases in sequence.

9. The system according to claim 8, characterized in that The signal output terminal of the driving device is respectively connected to the signal input electrode and the ground terminal of the semiconductor device to be tested through a first coaxial cable; The signal input terminal of the detection device is connected to the output electrode of the semiconductor device to be tested and the ground terminal respectively through a second coaxial cable; The trigger end of the detection device is connected to the signal input end of the drive device through a third coaxial cable.

10. The system according to claim 9, characterized in that The semiconductor device to be tested includes: a three-electrode MOS device or a four-electrode MOS device; When the semiconductor device to be tested is a three-electrode MOS device, the input electrode is an electrode formed by short-circuiting a gate electrode and a drain electrode of the semiconductor device to be tested; and the output electrode is a source electrode of the semiconductor device to be tested; When the semiconductor device to be tested is a four-electrode MOS device, the input electrode is an electrode where the gate electrode and the drain electrode of the semiconductor device to be tested are short-circuited together; the output electrode is an electrode where the source electrode and the body electrode of the semiconductor device to be tested are short-circuited together.

11. The system according to claim 10, characterized in that The short circuit is any of the following: Design metal connections and probe connections during package bonding and integrated circuit manufacturing.

12. The system of claim 9, wherein: One end of the first coaxial cable, one end of the second coaxial cable and one end of the third coaxial cable are respectively provided with connectors; The other end of the first coaxial cable, the other end of the second coaxial cable and the other end of the third coaxial cable are respectively provided with a connector; the connector includes any one of the following: N connector, SMA connector, SMB connector, SMP connector, SSMC connector, MMCX connector, BNC connector, TNC connector, 2.92 RF connector and 2.4 RF connector.

13. The system of claim 9, wherein: The characteristic impedances of the first coaxial cable, the second coaxial cable, and the third coaxial cable match the internal resistance of the driving device and the internal resistance of the detecting device.

14. The system of claim 9, wherein: The detection device is specifically used for: According to the formula Determining a reference leakage current of the semiconductor device under test ; Based on the formula Determine the drain-source voltage of the semiconductor device under test ; If the drain-source voltage is consistent with the preset operating voltage, the reference drain current is determined to be the required current; wherein, Said is the voltage detection value, the is the internal resistance of the detection device, is the output voltage of the driving device, is the internal resistance of the driving device, is the reference leakage current.

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