A testing system and testing method for deep ultraviolet LED chips

Abstract

The present invention discloses a test system and a test method for a deep ultraviolet LED chip. The test system includes an integrating sphere and a light-transmissive carrier plate for carrying the LED chip. A test opening is provided on the integrating sphere, and the carrier plate is arranged inside the cavity of the integrating sphere, and the carrying surface of the carrier plate faces the test opening. The test system provided by the present invention can capture and obtain the TM light output and TE light output of the deep ultraviolet LED chip to the greatest extent, greatly improving the test yield and test accuracy of the deep ultraviolet LED chip. When the LED chip process is stable, the present invention only needs to perform a full test of the chip-level optical parameters once, saving the development requirements of the wafer-level deep ultraviolet LED optical parameter test system.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor chip testing, and particularly to a testing system and method for deep ultraviolet LED chips. Background Art

[0002] The light emission of deep ultraviolet (also known as UVC, short-wave ultraviolet, wavelength range 220 - 280 nm) aluminum gallium nitride material system LEDs is mainly in the TM mode (light emission parallel to the light-emitting surface). Compared with near-ultraviolet LEDs and blue-green LEDs of indium gallium nitride material systems, the light emission ratio of its TE mode (light emission perpendicular to the light-emitting surface) is less. Currently, the commonly used LED chip testing systems mainly collect the light emission in the TE mode. Therefore, for deep ultraviolet LED chips, the existing LED chip testing systems cannot accurately obtain the radiation power of deep ultraviolet LED chips, seriously affecting the accuracy of deep ultraviolet LED chip testing.

[0003] Therefore, how to improve the accuracy of deep ultraviolet LED chip testing is a technical problem that those skilled in the art need to solve currently. Summary of the Invention

[0004] In view of this, an object of the present invention is to provide a testing system for deep ultraviolet LED chips, which can maximize the acquisition of TM light emission and TE light emission of LED chips, and greatly improve the testing yield and accuracy of deep ultraviolet LED chips. Another object of the present invention is to provide a testing method for deep ultraviolet LED chips.

[0005] To achieve the above object, the present invention provides the following technical solutions:

[0006] A testing system for deep ultraviolet LED chips includes an integrating sphere and a light-transmissive carrier plate for carrying an LED chip. A testing opening is provided on the integrating sphere, and the carrier plate is arranged inside the cavity of the integrating sphere with the carrying surface of the carrier plate facing the testing opening.

[0007] Preferably, the above testing system further includes a vacuum system located outside the integrating sphere. At least one vacuum adsorption hole is provided on the carrying surface of the carrier plate, and a vacuum cavity communicating with the vacuum adsorption hole is provided inside the carrier plate. The vacuum cavity is connected to the vacuum system through a vacuum pipeline.

[0008] Preferably, one end of the vacuum pipeline is connected to the carrier plate and supports the carrier plate, and the other end of the vacuum pipeline extends outside the testing opening and is connected to the vacuum system.

[0009] Preferably, the outer periphery of the carrier plate is connected and fixed to the inner wall of the integrating sphere through at least two support rods.

[0010] Preferably, a through hole for the vacuum pipeline to pass through is provided on the side wall of the integrating sphere.

[0011] Preferably, the aperture of the vacuum adsorption hole is 5 - 20 μm.

[0012] Preferably, the vacuum pipeline is a high-purity quartz pipeline or a sapphire pipeline.

[0013] Preferably, the distance that the carrier plate extends into the integrating sphere from the test opening is greater than or equal to 1 cm.

[0014] Preferably, the shape of the carrier plate is circular or square.

[0015] Preferably, the diameter or side length of the carrier plate is 1.5 - 5 cm.

[0016] Preferably, the aperture of the test opening is larger than the diameter or side length of the carrier plate.

[0017] Preferably, the bearing surface of the carrier plate is a plane or is provided with a chip fixing groove for accommodating the LED chip.

[0018] Preferably, the light transmittance of the carrier plate in the ultraviolet to infrared wavelength range is greater than or equal to 90%.

[0019] Preferably, the material of the carrier plate is high-purity quartz or sapphire.

[0020] Preferably, the reflectivity of the inner wall of the integrating sphere to deep ultraviolet light is greater than or equal to 90%.

[0021] Preferably, the inner wall of the integrating sphere is provided with a polytetrafluoroethylene coating or a barium sulfate coating.

[0022] Preferably, the test system of the present invention further includes a chip picking manipulator and / or a chip placing manipulator. The chip picking manipulator is used to move one or more of the LED chips at the chip picking station to the carrier plate, and the chip placing manipulator is used to move one or more of the LED chips on the carrier plate to the chip placing station.

[0023] Preferably, a chip bearing platform with adjustable position is arranged at the chip picking station and / or the chip placing station.

[0024] Preferably, the chip picking manipulator is provided with a push rod for picking and placing the film sticking clamp ring.

[0025] Preferably, the test system of the present invention further includes an optoelectronic test mechanism for performing optoelectronic tests on single or multiple LED chips. The optoelectronic test mechanism includes test probes, and the test probes include probes or probe cards.

[0026] Preferably, the test system of the present invention further includes one or more image recognition systems for performing graphic recognition processing on the LED chips.

[0027] Preferably, the image recognition system includes a CCD and an illumination light source used in cooperation with the CCD.

[0028] Preferably, the illumination light source includes a coaxial light source, a paraxial light source, and a transmission light source.

[0029] Preferably, the illumination light source uses a red LED light source, and / or a green LED light source, and / or a blue LED light source.

[0030] Preferably, the test system of the present invention further includes a current source meter, a deep ultraviolet band optical tester, and a control computer.

[0031] The test system for deep ultraviolet LED chips provided by the present invention includes an integrating sphere and a light-transmissive carrier plate for carrying the LED chips. The integrating sphere is provided with a test opening, and the carrier plate is arranged inside the cavity of the integrating sphere, and the carrying surface of the carrier plate faces the test opening.

[0032] When testing the deep ultraviolet LED chips, place the deep ultraviolet LED chips on the carrier plate and make the light-emitting surface of the deep ultraviolet LED chips adhere to the carrying surface of the carrier plate. Since the carrier plate is located inside the cavity of the integrating sphere and the carrying surface of the carrier plate faces the direction of the test opening of the integrating sphere, the integrating sphere can capture and obtain the TM light emission and TE light emission of the deep ultraviolet LED chips to the greatest extent, greatly improving the test yield and test accuracy of the deep ultraviolet LED chips. When the LED chip process is stable, the present invention only needs to perform a full test of the chip-level optical parameters once. The wafer-level test equipment uses an existing conventional test system to obtain electrical parameters as the basis for wafer probing, saving the development requirement of the wafer-level deep ultraviolet LED optical parameter test system. The test system of the present invention can provide test results closest to the actual light emission value, significantly improving the test accuracy of the deep ultraviolet LED chips.

[0033] The present invention also provides a test method for deep ultraviolet LED chips, which is tested using the test system for deep ultraviolet LED chips as described above. The test method includes the following steps:

[0034] Arrange a light-transmissive carrier plate inside the cavity of the integrating sphere and make the carrying surface of the carrier plate face the test opening of the integrating sphere;

[0035] Place and fix one or more LED chips on the carrying surface of the carrier plate;

[0036] Perform optoelectronic testing on the LED chips using an optoelectronic testing mechanism.

[0037] Preferably, in the step of placing and fixing one or more LED chips on the bearing surface of the carrier tray, a chip picking manipulator is used to place and fix one or more LED chips on the bearing surface of the carrier tray.

[0038] Preferably, before the step of performing optoelectronic testing on the LED chip by using an optoelectronic testing mechanism, the following steps are further included:

[0039] Connect the test probe to the metal electrode of the LED chip, and use a current source meter to provide set test current and voltage parameters.

[0040] Preferably, after the step of performing optoelectronic testing on the LED chip by using an optoelectronic testing mechanism, the following steps are further included:

[0041] Use a chip placing manipulator to pick up one or more LED chips on the carrier tray and place and fix them on a bearing film.

[0042] By using the testing method provided by the present invention, the TM light output and TE light output of deep ultraviolet LED chips can be captured and obtained to the maximum extent, and the testing yield and testing accuracy of deep ultraviolet LED chips can be greatly improved. Description of the Drawings

[0043] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0044] Figure 1 Schematic diagram of the first way to fix the carrier tray in a suspended manner in a specific embodiment of the present invention;

[0045] Figure 2 Schematic diagram of the second way to fix the carrier tray in a suspended manner in a specific embodiment of the present invention;

[0046] Figure 3 Schematic diagram of the testing process of the testing system in a specific embodiment of the present invention.

[0047] Figures 1 to 3 The meanings of the various reference numerals in the following are as follows:

[0048] 1 - integrating sphere, 2 - negative probe, 3 - image recognition system, 4 - positive probe, 5 - support rod, 6 - carrier tray, 7 - LED chip, 8 - spectrometer, 9 - vacuum pipeline, 10 - testing opening, 11 - chip picking manipulator, 12 - chip placing manipulator, 13 - chip picking station bearing platform, 14 - chip placing station bearing platform. Specific Embodiment

[0049] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0050] Please refer to Figures 1 to 3 , Figure 1 which is a schematic diagram of the first way to fix the carrier plate in the air in the specific embodiment of the present invention; Figure 2 which is a schematic diagram of the second way to fix the carrier plate in the air in the specific embodiment of the present invention; Figure 3 which is a schematic diagram of the test process of the test system in the specific embodiment of the present invention.

[0051] The present invention provides a test system for deep ultraviolet LED chips, including an integrating sphere 1 and a light-transmissive carrier plate 6 for carrying the LED chip 7. A test opening 10 is provided on the integrating sphere 1. The carrier plate 6 is arranged inside the cavity of the integrating sphere 1, and the carrying surface of the carrier plate 6 faces the test opening 10.

[0052] When testing the deep ultraviolet LED chip, the deep ultraviolet LED chip is placed on the carrier plate 6 and the light-emitting surface of the deep ultraviolet LED chip is attached to the carrying surface of the carrier plate 6. Since the carrier plate 6 is located inside the cavity of the integrating sphere 1 and the carrying surface of the carrier plate 6 faces the test opening 10 of the integrating sphere, the integrating sphere 1 can capture the TM light emission and TE light emission of the deep ultraviolet LED chip to the greatest extent, greatly improving the test yield and test accuracy of the deep ultraviolet LED chip. Under the condition that the LED chip process is stable, the present invention only needs to perform a full test of the chip-level optical parameters once. The wafer-level test equipment uses the existing conventional test system to obtain electrical parameters as the basis for wafer placement, saving the development requirement of the wafer-level deep ultraviolet LED optical parameter test system. The test system of the present invention can provide test results closest to the actual light emission value, significantly improving the test accuracy of the deep ultraviolet LED chip.

[0053] Preferably, the test system provided by the present invention further includes a vacuum system located outside the integrating sphere 1. At least one vacuum adsorption hole is provided on the carrying surface of the carrier plate 6. A vacuum cavity communicating with the vacuum adsorption hole is provided inside the carrier plate 6. The vacuum cavity is connected to the outside vacuum system through a vacuum pipeline 9. In this solution, the carrier plate 6 uses the vacuum adsorption method to fix the position of the LED chip 7, ensuring the stability of the position of the LED chip 7 during the test and improving the test accuracy.

[0054] It should be noted that the carrier plate 6 in this solution can be suspended inside the cavity of the integrating sphere 1 in various ways. In a preferred solution, one end of the vacuum pipeline 9 is connected to the carrier plate 6 to support the carrier plate 6, and the other end of the vacuum pipeline 9 extends outside the test opening 10 and is connected to the vacuum system. In this embodiment solution, the vacuum pipeline 9 can provide a supporting force for the carrier plate 6. Specifically, the vacuum pipeline 9 can be made of a material with sufficient stiffness (such as sapphire or high-purity quartz, etc.), so as to be able to provide stable support for the carrier plate 6. Preferably, the vacuum pipeline 9 is a high-purity quartz pipeline.

[0055] Preferably, the aperture of the vacuum adsorption holes on the carrier plate 6 is 5 - 20 μm, and the number thereof can be one or multiple. Multiple vacuum adsorption holes can be arranged in a matrix form or in a circumferential radiation manner, etc., which is convenient for arranging and adsorbing and fixing multiple LED chips 7 in sequence.

[0056] Preferably, the outer periphery of the carrier plate 6 can also be connected and fixed to the inner wall of the integrating sphere 1 through at least two support rods 5 to realize the fixation of the carrier plate 6.

[0057] Preferably, the side wall of the integrating sphere 1 is provided with a through hole for the vacuum pipeline 9 to pass through. Specifically, the vacuum pipeline 9 made of a material with sufficient stiffness can be used as at least one of the support rods 5, that is, the vacuum pipeline 9 not only has the function of pumping vacuum but also has the function of supporting the carrier plate 6.

[0058] Preferably, the distance between the carrier plate 6 and the test opening 10 is greater than or equal to 1 cm, that is, the distance that the carrier sheet 6 extends into the integrating sphere 1 from the test opening 10 is greater than or equal to 1 cm. Ensure that all the TM light emitted by the LED chip 7 can be collected by the integrating sphere 1.

[0059] Preferably, the shape of the carrier plate 6 is square or circular. Preferably, the side length or diameter of the carrier plate 6 is 1.5 - 5 cm, and a single larger LED chip 7 or multiple smaller LED chips 7 can be adsorbed at one time.

[0060] When assembling this test system, in order to facilitate the smooth placement of the carrier plate 6 inside the integrating sphere 1, preferably, the aperture of the test opening 10 in this solution is designed to be larger than the diameter or side length of the carrier plate 6. Preferably, the shape of the test opening 10 is also designed to be square or circular. Preferably, the side length or diameter of the test opening 10 is greater than the side length or diameter of the carrier plate 6. Specifically, the range of the side length or diameter of the test opening 10 in this solution is 3 - 5 cm.

[0061] Preferably, the bearing surface of the carrier plate 6 is a plane or is provided with a chip fixing groove for accommodating the LED chip 7. Preferably, the size of the chip fixing groove is slightly larger than the size of the LED chip 7 to define the position of the LED chip 7.

[0062] Preferably, the light transmittance of the carrier plate 6 in the ultraviolet to infrared wavelength range is greater than or equal to 90%.

[0063] Preferably, the material of the carrier plate 6 is high-purity quartz or sapphire. Specifically, the carrier plate 6 in this solution is a high-purity quartz carrier plate.

[0064] Preferably, the reflectivity of the inner wall of the integrating sphere 1 to deep ultraviolet light is greater than or equal to 90%.

[0065] Preferably, the inner wall of the integrating sphere 1 is provided with a polytetrafluoroethylene coating or a barium sulfate coating to increase the reflectivity of the inner wall of the integrating sphere 1.

[0066] Preferably, the test system provided by the present invention further includes a chip picking manipulator 11 and / or a chip placing manipulator 12. The chip picking manipulator 11 is used to move one or more LED chips 7 on the chip picking station to the carrier plate 6, and the chip placing manipulator 12 is used to move one or more LED chips on the carrier plate to the chip placing station. By providing the chip picking manipulator 11 and / or the chip placing manipulator 12, the automation degree of the test process can be greatly improved, further saving manpower and further improving the test efficiency.

[0067] Preferably, the chip picking manipulator 11 and / or the chip placing manipulator 12 has a vacuum chuck for adsorbing the LED chip 7. The end face of the vacuum chuck is provided with at least one vacuum suction hole, and the aperture of the vacuum suction hole is 5-10 μm.

[0068] Preferably, the chip picking manipulator 11 and / or the chip placing manipulator 12 has a rotating arm and a robotic arm. One vacuum chuck is provided at each end of the rotating arm, and the midpoint of the rotating arm is hinged to the end of the robotic arm. The chip picking manipulator 11 and / or the chip placing manipulator 12 can move in the X / Y / Z directions and rotate at an angle within a certain range, and the robotic arm can adopt a double-headed rotating placement method to improve the picking and placing efficiency.

[0069] Preferably, the chip picking station and / or the chip placing station are arranged with a chip carrier table with adjustable position, which can move in the X / Y / Z directions and rotate at an angle to cooperate with the image recognition system 3 and the manipulator to realize the regular placement of the LED chip positions. As Figure 3 shown, the chip picking station is arranged with a chip picking station carrier table 13, and the chip placing station is arranged with a chip placing station carrier table 14.

[0070] Preferably, the chip picking manipulator 11 is provided with a push rod for picking and placing the film sticking ring.

[0071] Preferably, the above-mentioned test system for deep ultraviolet LED chips further includes a photoelectric test mechanism for performing photoelectric tests on single or multiple LED chips 7. The photoelectric test mechanism includes test probes, and the test probes include probes or probe cards. The probe includes a negative probe 2 and a positive probe 4, asFigure 1 and Figure 2 As shown. The probe card is a device integrated with multiple probes, which can be simultaneously connected to the metal electrodes of multiple LED chips 7 to achieve the purpose of simultaneously testing multiple LED chips 7.

[0072] Preferably, the above-mentioned test system for deep ultraviolet LED chips further includes one or more sets of image recognition systems 3 for performing graphic recognition processing on the LED chips 7.

[0073] Preferably, the image recognition system 3 includes a charge-coupled device (CCD) and an illumination light source used in cooperation with the CCD.

[0074] Preferably, the illumination light source includes a coaxial light source, a paraxial light source, and a transmission light source.

[0075] Preferably, the illumination light source adopts a red LED light source, and / or a green LED light source, and / or a blue LED light source, and arbitrary combination modes of illumination can be realized through software for the appearance recognition of LED chips with different surface conditions.

[0076] Preferably, the above-mentioned test system for deep ultraviolet LED chips further includes a current source meter, an optical tester in the deep ultraviolet band (such as Figures 1 to 3 the spectrometer 8 therein) and a control computer.

[0077] The present invention also provides a test method for deep ultraviolet LED chips, which is tested by using the above-mentioned test system for deep ultraviolet LED chips. The test method includes the following steps:

[0078] Arrange a light-transmissive carrier plate inside the cavity of the integrating sphere, and make the bearing surface of the carrier plate face the test opening of the integrating sphere;

[0079] Place and fix one or more LED chips on the bearing surface of the carrier plate;

[0080] Perform optoelectronic testing on the LED chips by using an optoelectronic testing mechanism.

[0081] By using the test method provided by the present invention, the TM light output and TE light output of deep ultraviolet LED chips can be captured and obtained to the maximum extent, and the test yield and test accuracy of deep ultraviolet LED chips can be greatly improved.

[0082] Preferably, in the step of placing and fixing one or more LED chips on the bearing surface of the carrier plate, specifically, a chip picking manipulator is used to place and fix one or more LED chips on the bearing surface of the carrier plate. Such a setting can further improve the automation of the process of picking LED chips and reduce labor.

[0083] Preferably, before the step of performing optoelectronic testing on the LED chip using an optoelectronic testing mechanism, the following steps are further included:

[0084] Connect the test probe to the metal electrode of the LED chip, and use a current source meter to provide set test current and voltage parameters.

[0085] Preferably, after the step of performing optoelectronic testing on the LED chip using an optoelectronic testing mechanism, the following steps are further included:

[0086] Use a chip placing manipulator to pick up one or more of the LED chips on the carrier tray and place and fix them on a carrier film.

[0087] The following introduces the testing process of deep ultraviolet LED chips through specific examples:

[0088] Adhere the deep ultraviolet LED chip to the carrier film, then place a plurality of snap ring fixtures holding the carrier film at the automatic loading position of the equipment, and the chip picking manipulator moves it to the chip picking station;

[0089] The testing system uses a CCD to perform image recognition on the deep ultraviolet LED chip at the chip picking station, forms a station rotation and movement tool document, and transmits it to the central control computer;

[0090] The chip picking manipulator adsorbs one or more deep ultraviolet LED chips in a rotating manner according to set parameters and places them on the bearing surface of the carrier tray inside the integrating sphere cavity. The carrier tray adsorbs and fixes the deep ultraviolet LED chip through vacuum suction holes;

[0091] Under the real-time monitoring of the CCD at the testing station, the test probe performs optoelectronic parameter testing on the deep ultraviolet LED chip adsorbed on the carrier tray, and transmits the test results to the control computer;

[0092] The deep ultraviolet LED chip after the test is then transferred by the chip placing manipulator to the carrier film at the chip placing station, and finally completes the optoelectronic parameter testing work of the deep ultraviolet LED chip.

[0093] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be obvious to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to these embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A test system for deep ultraviolet LED chips, characterized in that, It includes an integrating sphere and a light-transmissive carrier plate for carrying an LED chip. A test opening is provided on the integrating sphere. The carrier plate is arranged inside the cavity of the integrating sphere, and the carrying surface of the carrier plate faces the test opening, so that the integrating sphere can capture the TM light output and TE light output of the deep ultraviolet LED chip to the greatest extent. It further includes a vacuum system located outside the integrating sphere. At least one vacuum adsorption hole is provided on the carrying surface of the carrier plate. A vacuum cavity communicating with the vacuum adsorption hole is provided inside the carrier plate. The vacuum cavity is connected to the vacuum system through a vacuum pipeline. One end of the vacuum pipeline is connected to the carrier plate and supports the carrier plate, and the other end of the vacuum pipeline extends outside the test opening and is connected to the vacuum system. Wherein, the inner wall of the integrating sphere is provided with a polytetrafluoroethylene coating or a barium sulfate coating, and the reflectivity of deep ultraviolet light is greater than or equal to 90%.

2. The test system for deep ultraviolet LED chips according to claim 1, characterized in that, It further includes a vacuum system located outside the integrating sphere. At least one vacuum adsorption hole is provided on the carrying surface of the carrier plate. A vacuum cavity communicating with the vacuum adsorption hole is provided inside the carrier plate. The vacuum cavity is connected to the vacuum system through a vacuum pipeline.

3. The test system for deep ultraviolet LED chips according to claim 2, characterized in that, One end of the vacuum pipeline is connected to the carrier plate and supports the carrier plate, and the other end of the vacuum pipeline extends outside the test opening and is connected to the vacuum system.

4. The test system for deep ultraviolet LED chips according to claim 2, characterized in that, The outer periphery of the carrier plate is connected and fixed to the inner wall of the integrating sphere through at least two support rods.

5. The test system for deep ultraviolet LED chips according to claim 4, characterized in that, A through hole for the vacuum pipeline to pass through is provided on the side wall of the integrating sphere.

6. The test system for deep ultraviolet LED chips according to claim 2, characterized in that, The aperture of the vacuum adsorption hole is 5 - 20 μm.

7. The test system for deep ultraviolet LED chips according to claim 2, characterized in that, The vacuum pipeline is a high-purity quartz pipeline or a sapphire pipeline.

8. The test system for deep ultraviolet LED chips according to claim 1, characterized in that, The distance that the carrier plate extends into the integrating sphere from the test opening is greater than or equal to 1 cm.

9. The test system for deep ultraviolet LED chips according to claim 1, characterized in that, The shape of the carrier plate is circular or square.

10. The test system for deep ultraviolet LED chips according to claim 9, characterized in that, The diameter or side length of the carrier plate is 1.5 - 5 cm.

11. The test system for deep ultraviolet LED chips according to claim 9, characterized in that, The aperture of the test opening is larger than the diameter or side length of the carrier plate.

12. The test system for deep ultraviolet LED chips according to claim 1, characterized in that, The carrying surface of the carrier plate is a plane or is provided with a chip fixing groove for accommodating the LED chip.

13. The test system for deep ultraviolet LED chips according to claim 1, characterized in that, The light transmittance of the carrier plate in the ultraviolet to infrared wavelength range is greater than or equal to 90%.

14. The test system for deep ultraviolet LED chips according to claim 1, characterized in that, The material of the carrier plate is high-purity quartz or sapphire.

15. The test system for deep ultraviolet LED chips according to claim 1, characterized in that, It further includes a chip picking manipulator and / or a chip placing manipulator. The chip picking manipulator is used to move one or more of the LED chips at the chip picking station to the carrier plate, and the chip placing manipulator is used to move one or more of the LED chips on the carrier plate to the chip placing station.

16. The test system for deep ultraviolet LED chips according to claim 15, characterized in that, The chip picking station and / or the chip placing station are provided with a chip carrying platform with adjustable position.

17. The test system for deep ultraviolet LED chips according to claim 15, characterized in that The chip picking manipulator is provided with a push rod for picking and placing a film clamping ring.

18. The test system for deep ultraviolet LED chips according to claim 1, characterized in that It further includes an optoelectronic testing mechanism for performing optoelectronic tests on single or multiple LED chips. The optoelectronic testing mechanism includes test probes, and the test probes include probes or probe cards.

19. The test system for deep ultraviolet LED chips according to claim 1, characterized in that It further includes one set or multiple sets of image recognition systems for performing graphic recognition processing on the LED chips.

20. The test system for deep ultraviolet LED chips according to claim 19, characterized in that The image recognition system includes a CCD and an illumination light source used in cooperation with the CCD.

21. The test system for deep ultraviolet LED chips according to claim 20, characterized in that The illumination light source includes a coaxial light source, a paraxial light source, and a transmission light source.

22. The test system for deep ultraviolet LED chips according to claim 21, characterized in that The lighting source adopts a red LED light source, and / or a green LED light source, and / or a blue LED light source.

23. The test system for deep ultraviolet LED chips according to claim 1, characterized in that It further includes a current source meter, a deep ultraviolet band optical tester, and a control computer.

24. A test method for deep ultraviolet LED chips, characterized in that Testing is performed using the testing system for deep ultraviolet LED chips described in any one of claims 1 to 23, including the following steps: Arrange a light-transmissive carrier plate inside the cavity of the integrating sphere, and arrange the bearing surface of the carrier plate facing the test opening of the integrating sphere; Place and fix one or more LED chips on the bearing surface of the carrier plate; Perform optoelectronic testing on the LED chips using an optoelectronic testing mechanism.

25. The test method for deep ultraviolet LED chips according to claim 24, characterized in that In the step of placing and fixing one or more LED chips on the bearing surface of the carrier plate, use a chip picking manipulator to place and fix one or more LED chips on the bearing surface of the carrier plate.

26. The test method for deep ultraviolet LED chips according to claim 24, characterized in that Before the step of performing optoelectronic testing on the LED chips using an optoelectronic testing mechanism, the following steps are further included: Connect the test probe to the metal electrode of the LED chip, and use a current source meter to provide set test current and voltage parameters.

27. The test method for deep ultraviolet LED chips according to claim 24, characterized in that After the step of performing optoelectronic testing on the LED chips using an optoelectronic testing mechanism, the following steps are further included: Use a chip placing manipulator to pick up one or more of the LED chips on the carrier plate and place and fix them on a bearing film.

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