Process Chamber Heat Treatment Process Self-Cleaning System and Method

Abstract

The present application provides a self-cleaning system and method for the heat treatment process of a process chamber. The self-cleaning system for the heat treatment process of a process chamber includes: a batch information acquisition unit, which acquires the doping substance and doping concentration of the wafers in the batch to be processed from the production execution system; a temperature monitoring unit, which acquires the temperature change data during the heat treatment process from the temperature measuring probe of the process chamber; a self-cleaning program execution unit, which is connected to the batch information acquisition unit, the temperature monitoring unit and the process chamber, judges whether a by-product adheres to the temperature measuring probe according to the temperature change data during the heat treatment process of the process chamber, and judges whether to execute the self-cleaning program according to the doping substance and doping concentration. The present application judges whether to control the process chamber to execute the self-cleaning program by acquiring the doping substance and concentration of the wafers in the batch to be processed, and evaluates the cleaning effect of the self-cleaning program by monitoring the temperature change data during the heat treatment process and the dummy wafer process.

Description

Technical Field

[0001] The present application relates to the field of semiconductor integrated circuit manufacturing, and particularly to a self-cleaning system and method for the heat treatment process of a process chamber. Background Art

[0002] In the process of fabricating semiconductor wafers, doping the semiconductor substrate is an essential and important step to achieve device functions. According to the device design requirements, different doping elements such as P (phosphorus), B (boron), or As (arsenic) need to be selected for doping at different concentrations for different doping types such as p-type or n-type doping.

[0003] Currently, after doping processes such as ion implantation, a high-temperature thermal annealing process is generally required for ion activation. The high-temperature process is used to distribute and diffuse the doping substances in the semiconductor substrate, so as to repair chemical bonds and activate physical properties. During the high-temperature thermal annealing (>900 °C), doping substances such as P, B, or As have different diffusion intensities in semiconductor substrates such as silicon due to their different physical properties. Specifically, the diffusion intensity ranking is P > B > As. In the high-temperature thermal annealing process of high-concentration P doping (dose > 1×10 15 ions / cm 3 ), the P molecules with the strongest diffusion ability will sublime, so that they overflow the wafer surface. Then, during the cooling process of the chamber, they will attach to the surface of the reaction chamber wall in the form of by-products of P2O5, forming visible yellowish-white solid substances. When these reaction by-products attach to the surface of the temperature measurement probe located on the reaction chamber wall, the temperature measurement accuracy will deviate, thereby affecting the accuracy of subsequent process steps and even the product yield.

[0004] Therefore, it is necessary to propose a new self-cleaning system and method for the heat treatment process of a process chamber to solve the above problems. Summary of the Invention

[0005] In view of the above-mentioned disadvantages of the prior art, the purpose of the present application is to provide a self-cleaning system and method for the heat treatment process of a process chamber, which is used to solve problems such as the influence of by-products attachment in the thermal process of high-concentration doped wafers on the temperature measurement accuracy of the temperature measurement probe in the prior art.

[0006] To achieve the above purpose and other related purposes, the present application provides a self-cleaning system for the heat treatment process of a process chamber, including:

[0007] A batch information acquisition unit, which acquires the doping substance and doping concentration of the wafers in the batch to be processed from the production execution system;

[0008] A temperature monitoring unit, which is connected to the temperature measurement probe of the process chamber and acquires the temperature change data of the process chamber during the heat treatment process from the temperature measurement probe;

[0009] A self-cleaning program execution unit, which is connected to the batch information acquisition unit, the temperature monitoring unit and the process chamber. It judges whether the temperature measurement probe is attached with by-products according to the temperature change data of the process chamber during the heat treatment process, and judges whether to control the process chamber to execute the self-cleaning program according to the doping substance and doping concentration of the wafers in the batch to be processed.

[0010] As an alternative solution of the present application, it further includes a dummy wafer process unit and / or an alarm unit. The dummy wafer process unit is respectively connected to the self-cleaning program execution unit and the process chamber; the self-cleaning program execution unit controls the dummy wafer process unit to execute the dummy wafer process after the heat treatment process, and the self-cleaning program execution unit judges whether the self-cleaning program reaches the cleaning effect according to the temperature change data of the process chamber during the dummy wafer process; the alarm unit is respectively connected to the production execution system and the self-cleaning program execution unit, and sends alarm information to relevant engineering personnel when the wafers in the batch to be processed that need to execute the self-cleaning program arrive at the station and when the self-cleaning program does not reach the cleaning effect.

[0011] As an alternative solution of the present application, the self-cleaning program includes purging the process chamber with an inert gas at the sublimation temperature of the by-products generated during the heat treatment process.

[0012] As an alternative solution of the present application, the doping substance of the wafers in the batch to be processed is P; the by-product of the heat treatment process is P2O5; the doping concentration of the wafers in the batch to be processed is greater than 1×10 15 ions / cm 3 。

[0013] As an alternative solution of the present application, the flow rate of the nitrogen or inert gas purge is 30 L / min to 35 L / min; the process time of the self-cleaning program is 20 min to 25 min; the process temperature of the self-cleaning program is 850 °C to 950 °C.

[0014] As an alternative solution of the present application, the batch information acquisition unit also obtains the heat treatment target temperature of the wafers in the batch to be processed from the production execution system. When the heat treatment target temperature is greater than a certain value, the self-cleaning program execution unit triggers the self-cleaning program.

[0015] The present application also provides a self-cleaning method for the heat treatment process of a process chamber, including the following steps:

[0016] Before the process chamber processes the wafers in the batch to be processed, obtain the doping substance and doping concentration of the wafers in the batch to be processed;

[0017] When processing the wafers of the batch to be processed in the process chamber, obtain the temperature change data of the process chamber during the heat treatment process;

[0018] Judge whether the temperature measurement probe is attached with by-products according to the temperature change data, and judge whether the process chamber needs to execute a self-cleaning program according to the doping substance and doping concentration of the wafers of the batch to be processed; if the self-cleaning program needs to be executed, control the process chamber to execute the self-cleaning program.

[0019] As an optional solution of the present application, after the heat treatment process, it further includes the step of performing a dummy wafer process in the process chamber, and judge whether the self-cleaning program achieves a cleaning effect according to the temperature change data of the process chamber during the dummy wafer process.

[0020] As an optional solution of the present application, the self-cleaning program includes purging the process chamber with an inert gas at the sublimation temperature of the by-products generated during the heat treatment process.

[0021] As an optional solution of the present application, the doping substance of the wafers of the batch to be processed is P; the by-product of the heat treatment process is P2O5; the doping concentration of the wafers of the batch to be processed is greater than 1×10 15 ions / cm 3 。

[0022] As an optional solution of the present application, the flow rate of the nitrogen or inert gas purge is 30L / min to 35L / min; the process time of the self-cleaning program is 20min to 25min; the process temperature of the self-cleaning program is 850°C to 950°C.

[0023] As an optional solution of the present application, when the heat treatment target temperature of the wafers of the batch to be processed is greater than a certain value, the process chamber executes the self-cleaning program.

[0024] As described above, the self-cleaning system and method for the heat treatment process of the process chamber provided by the present application judge whether to control the process chamber to execute the self-cleaning program by obtaining the doping substance and concentration of the wafers of the batch to be processed, and evaluate the cleaning effect of the self-cleaning program by monitoring the temperature change data during the heat process and the dummy wafer process, that is, formulate different cleaning programs for different products, and minimize the loss of product scrapping caused by temperature anomalies brought by pollutants as much as possible while reducing the process time as much as possible. Description of the Drawings

[0025] Figure 1 It is shown as the flowchart of the self-cleaning method for the heat treatment process of the process chamber provided in Embodiment 1 of the present application.

[0026] Figure 2It shows a schematic diagram of the self-cleaning system during the heat treatment process of the process chamber provided in Embodiment 1 of the present application.

[0027] Figure 3 It shows a schematic diagram of the self-cleaning system during the heat treatment process of the process chamber provided in Embodiment 2 of the present application.

[0028] Element number description

[0029] 101 Batch information acquisition unit

[0030] 102 Temperature monitoring unit

[0031] 103 Self-cleaning program execution unit

[0032] 104 dummy wafer process unit

[0033] 201 Production execution system

[0034] 202 Process chamber

[0035] 202a Temperature measurement probe

[0036] 202b Heating device

[0037] 202c Wafer stage

[0038] 202d Wafer

[0039] 301 Batch information acquisition unit

[0040] 302 Temperature monitoring unit

[0041] 303 Self-cleaning program execution unit

[0042] 304 dummy wafer process unit

[0043] 305 Alarm unit

[0044] 401 Production execution system

[0045] 402 Process chamber

[0046] 402a Temperature measurement probe

[0047] 402b Heating device

[0048] 402c Wafer stage

[0049] 402d Wafer

[0050] Steps S1 - S3 Step 1) to Step 3) Detailed implementation

[0051] The following describes the implementation modes of the present application through specific specific examples. Those skilled in the art can easily understand other advantages and effects of the present application from the content disclosed in this specification. The present application can also be implemented or applied through other different specific implementation modes. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present application. When detailing the embodiments of the present application, for the convenience of description, the cross-sectional views showing the device structure will be enlarged locally in a non-general proportion, and the schematic diagrams are only examples and should not limit the protection scope of the present application here. In addition, in actual production, three-dimensional spatial dimensions including length, width, and depth should be included.

[0052] For the convenience of description, spatial relationship terms such as "below", "beneath", "lower than", "under", "above", "on" may be used herein to describe the relationship between one element or feature shown in the drawings and other elements or features. It will be understood that these spatial relationship terms are intended to encompass other directions of the device in use or operation in addition to the directions depicted in the drawings. In addition, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or there can be one or more intervening layers.

[0053] In the context of the present application, the structure in which the first feature is "above" the second feature may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0054] Please refer to Figures 1 to 3 . It should be noted that the diagrams provided in this embodiment only illustrate the basic concept of the present application in a schematic manner. Although only the components related to the present application are shown in the diagrams and are not drawn according to the number, shape, and size of the components in actual implementation, the form, number, and ratio of each component in actual implementation can be arbitrarily changed, and the layout form of its components may also be more complex.

[0055] Embodiment 1

[0056] Please refer to Figure 1 , this embodiment provides a self-cleaning method for the heat treatment process of a process chamber, including the following steps:

[0057] 1) Before processing the wafers of the batch to be processed in the process chamber, obtain the doping substances and doping concentrations of the wafers of the batch to be processed;

[0058] 2) When processing the wafers of the batch to be processed in the process chamber, obtain the temperature change data of the process chamber during the heat treatment process;

[0059] 3) Determine whether a by-product adheres to the temperature measurement probe according to the temperature change data, and determine whether the process chamber needs to execute a self-cleaning program according to the doping substance and doping concentration of the wafer to be processed in the batch; if the self-cleaning program needs to be executed, control the process chamber to execute the self-cleaning program.

[0060] This application determines whether to control the process chamber to execute a self-cleaning program by obtaining the doping substance and concentration of the wafer to be processed in the batch, and evaluates the cleaning effect of the self-cleaning program by monitoring the temperature change data during the thermal process and the dummy wafer process, that is, different cleaning programs are formulated for different products, and the process time is reduced as much as possible under the condition of minimizing the loss of product scrapping caused by temperature anomalies brought by pollutants.

[0061] In step 1), please refer to Figure 1 S1 of. Before the process chamber processes the wafer to be processed in the batch, obtain the doping substance and doping concentration of the wafer to be processed in the batch.

[0062] Optionally, the process chamber may be a process chamber of a rapid thermal annealing device, a diffusion furnace tube, or a process chamber of a chemical vapor deposition device. The rapid thermal annealing device can be used for the monolithic wafer thermal annealing process to perform ion activation at a temperature greater than or equal to 900°C; the diffusion furnace tube can be used for the high-temperature annealing process after ion implantation or for the impurity doping diffusion process; the chemical vapor deposition device can be an atmospheric pressure, reduced pressure, low pressure, or plasma-enhanced chemical vapor deposition device. The process chamber can be used for batch processing or single-wafer processing. The process chamber can also be other possible process chambers that perform thermal processes, and the process temperature is higher than the temperature at which the doping substance sublimes from the semiconductor substrate. For example, for a silicon substrate doped with P (phosphorus), during the thermal annealing process at 900°C, P will sublime from the silicon substrate and overflow onto the surface of the silicon substrate, diffuse into the process chamber. When the thermal annealing process ends, as the chamber temperature decreases, the P in the chamber will adhere to the chamber wall, wafer chuck, or boat in the form of by-products such as P2O5. For rapid annealing devices such as monolithic lamp annealing, its temperature control system generally monitors the wafer annealing temperature by setting a temperature measurement probe on the wafer chuck. For devices such as diffusion furnace tubes, its temperature control system generally monitors the temperature at various positions inside the process chamber in real time by setting temperature measurement probes such as thermocouples on the chamber wall. When by-products such as P2O5 adhere to the surface of the temperature measurement probe, it will affect its temperature measurement accuracy, resulting in a difference between the read temperature data and the actual temperature, and further affecting the accuracy of subsequent processes, which will have an adverse impact on the stability of the wafer manufacturing process and even affect the product yield. The present application proposes a countermeasure to solve such problems. In addition to obtaining the doping substance and doping concentration of the batch of wafers to be processed, the target temperature of the heat treatment for the batch of wafers to be processed can also be obtained. During the high-temperature thermal annealing (>900°C) process, a high-concentration P doping substance will overflow from the wafer surface and adhere to the chamber structure. Therefore, for processes that meet specific doping types, concentrations, and processing temperatures, the present application will introduce a self-cleaning program to remove the by-products deposited on the surface of the temperature measurement probe.

[0063] In step 2), please refer to Figure 1 S2 of

[0064] In step 3), please refer to Figure 1 S3 of

[0065] In an embodiment provided by the present application, it is first determined in combination with the wafer to be processed in a batch and the target temperature of the heat treatment. When the doping substance, doping concentration of the wafer to be processed in a batch, and the target temperature of the heat treatment meet specific conditions, it is determined that by-products that may affect the temperature measurement probe may be generated during the heat process, and then a self-cleaning program is executed in order to remove the attached by-products through the self-cleaning program. In another embodiment, on the basis of combining the wafer to be processed in a batch and the target temperature of the heat treatment, the temperature change data during the heat treatment process, such as the temperature change curve, can be further analyzed to determine whether the by-products have affected the temperature measurement accuracy of the temperature measurement probe, and then determine whether it is necessary to execute the self-cleaning program. This can greatly reduce the unnecessary self-cleaning program process, save process time, and improve the equipment output rate. When by-products of the heat treatment process, such as P2O5, etc., adhere to the surface of the temperature measurement point of the temperature measurement probe, the temperature indication detected by the temperature measurement probe will deviate or lag, resulting in a deviation between the measured temperature change data and the temperature change data in the ideal state. For example, when by-products such as P2O5 adhere to the surface of the temperature measurement point of the temperature measurement probe, in its temperature change curve, both the heating or cooling trend will lag relative to the ideal state. Comparing this abnormal curve with the normal curve will easily find the deviation difference between the curves. In some other examples, considering that the higher the temperature, the greater the possibility of generating by-products, it is also possible to determine whether to start the self-cleaning program only by the target temperature of the heat treatment, that is, when the target temperature of the heat treatment of the wafer to be processed in a batch is greater than a certain value, for example, greater than or equal to 900 °C, the process chamber executes the self-cleaning program, or it is also possible to determine whether to execute the self-cleaning program only by these two factors of the doping substance and doping concentration of the wafer to be processed in a batch, or it is also possible to determine only by these two factors of the doping concentration and the target temperature of the heat treatment of the wafer to be processed in a batch, or to determine only by these two factors of the doping concentration and the target temperature of the heat treatment.

[0066] As an example, the self-cleaning program includes purging the process chamber with an inert gas at the sublimation temperature of the by-products generated during the heat treatment process. The inert gas includes rare gases such as Ar or He, and nitrogen can also be used for purging. In a specific example, the doping substance of the wafer to be processed in a batch is P, and the by-product of the heat treatment process is P2O5; the doping concentration of the wafer to be processed in a batch is greater than 1×10 15 ions / cm 3 . The flow rate of the nitrogen or inert gas purge is 30 L / min to 35 L / min; the process time of the self-cleaning program is 20 min to 25 min; the process temperature of the self-cleaning program is 850 °C to 950 °C. The boiling point temperature of the P2O5 by-product is 360 °C. Therefore, the process temperature of 850 °C to 950 °C can ensure that the by-products quickly sublimate into a gaseous state and are purged away by nitrogen or inert gas.

[0067] As an example, for the batch of wafers to be processed with the doping substance being P and the doping concentration being greater than 1×10 15 ions / cm 3 , the Manufacturing Executive System (MES) can mark it as a batch requiring attention and assign a corresponding specific code. When this batch of wafers arrives at a station involving a heat treatment process, it notifies the process personnel that this batch of wafers requires special handling. After the heat treatment process is performed on this batch of wafers, the process personnel can retrieve data such as the temperature change curve for inspection. By comparing it with the temperature change curve of a general heat process, it is determined whether this heat process has affected the temperature measurement accuracy of the temperature measurement probe. When the process personnel determine through checking the temperature change data that by-products such as P2O5 that may affect the temperature measurement accuracy may be attached to the surface of the temperature measurement probe, the process chamber can be controlled to execute a self-cleaning program. Optionally, after the self-cleaning program is executed, a dummy wafer can also be loaded into the process chamber and a dummy run of the heat treatment can be performed. By checking the temperature change data in the dummy wafer heat treatment process, the process personnel can determine whether the by-products such as P2O5 on the surface of the temperature measurement probe have been cleaned by the self-cleaning program without opening the process chamber for maintenance. If it is determined that the by-products have been cleaned, the equipment can be released to continue processing subsequent batches of wafers. If the temperature change curve of the dummy run still shows abnormalities, the equipment maintenance personnel need to be notified to further inspect the equipment by means such as opening the chamber, perform equipment maintenance to eliminate the fault, and then execute the dummy run again after the equipment maintenance to check the temperature change curve.

[0068] As Figure 2 shown, the present application also provides a self-cleaning system for the heat treatment process of a process chamber, which can be used to execute the self-cleaning method for the heat treatment process of the process chamber described in any of the above-mentioned solutions. Therefore, the foregoing description of the self-cleaning method for the heat treatment process of the process chamber can be cited herein by reference. Of course, the self-cleaning system for the heat treatment process of the process chamber provided by the present application can also be used to execute other semiconductor process manufacturing processes. The self-cleaning system for the heat treatment process of the process chamber includes:

[0069] A batch information acquisition unit 101, which acquires the doping substance and doping concentration of the batch of wafers to be processed from the manufacturing execution system 201;

[0070] A temperature monitoring unit 102, which is connected to the temperature measurement probe 202a of the process chamber 202 and acquires the temperature change data of the process chamber 202 during the heat treatment process from the temperature measurement probe 202a;

[0071] The self-cleaning program execution unit 103 is connected to the batch information acquisition unit 101, the temperature monitoring unit 102, and the process chamber 202. It determines whether the temperature measurement probe 202a is attached with by-products according to the temperature change data during the heat treatment process of the process chamber 202, and determines whether to control the process chamber 202 to execute the self-cleaning program according to the doping substance and doping concentration of the wafers in the batch to be processed.

[0072] As Figure 2 shown, in this embodiment, the process chamber 202 is a single-wafer lamp annealing process chamber. In other embodiments of the present application, the process chamber may also be other possible high-temperature thermal process equipment chambers. In Figure 2 the process chamber 202 shown, the wafer 202d is placed on the wafer stage 202c, and a heating device 202b composed of a plurality of lamp heating unit arrays is arranged above it for high-temperature annealing of the wafer 202d. The temperature measurement points where the temperature measurement probe 202a is exposed in the chamber are multiple (8 in this embodiment), and are evenly distributed on the surface of the wafer stage 202c near the wafer 202d. Optionally, the process chamber 202 may be provided with multiple temperature measurement probes distributed on the surface of the chamber wall. The production execution system 201 processes specific wafers, for example, wafers with a doping substance of P and a doping concentration greater than 1×10 15 ions / cm 3The wafers in the batch to be processed are marked as batches to be concerned about and given corresponding specific codes. When the wafers in the batch to be processed arrive at the current processing station, the batch information acquisition unit 101 obtains their doping substances and doping concentrations according to the specific codes. In addition, the target temperature for heat treatment can also be obtained and fed back to the self-cleaning program execution unit 103. The self-cleaning program execution unit 103 makes a judgment in combination with the wafers in the batch to be processed and the target temperature for heat treatment. When the doping substances, doping concentrations, and target temperature for heat treatment of the wafers in the batch to be processed meet specific conditions, it is judged that by-products that may affect the temperature measurement probe may be generated during the heat process, and then the self-cleaning program is executed. Or, on the basis of combining the wafers in the batch to be processed and the target temperature for heat treatment, the temperature change data during the heat treatment process, such as the temperature change curve, can be further analyzed to judge whether the by-products have affected the temperature measurement accuracy of the temperature measurement probe, and then judge whether the self-cleaning program needs to be executed. In some other examples, considering that the higher the temperature, the greater the possibility of generating by-products, it is also possible to judge whether to start the self-cleaning program only through the target temperature for heat treatment, that is, the batch information acquisition unit obtains the target temperature for heat treatment of the wafers in the batch to be processed from the production execution system. When the target temperature for heat treatment of the wafers in the batch to be processed is greater than a certain value, for example, greater than or equal to 900 °C, the self-cleaning program execution unit triggers the self-cleaning program. Or it is also possible to judge whether to execute the self-cleaning program only through the two factors of the doping substances and doping concentrations of the wafers in the batch to be processed, or to judge only through the two factors of the doping concentration and the target temperature for heat treatment of the wafers in the batch to be processed, or to judge only through the two factors of the doping concentration and the target temperature for heat treatment.

[0073] As an example, it further includes a dummy wafer process unit 104. The dummy wafer process unit 104 is connected to the self-cleaning program execution unit 103 and the process chamber 202; the self-cleaning program execution unit 103 controls the dummy wafer process unit 104 to execute the dummy wafer process after the heat treatment process. The self-cleaning program execution unit 103 judges whether the self-cleaning program has achieved the cleaning effect according to the temperature change data of the process chamber 202 during the dummy wafer process. The dummy wafer process unit 104 includes several dummy wafers that can be used to execute the dummy wafer process and loads the dummy wafers into the process chamber 202 when the dummy wafer process needs to be executed.

[0074] Embodiment 2

[0075] Such as Figure 3As shown in the figure, this embodiment provides another self-cleaning system for the heat treatment process of a process chamber. The difference from the first embodiment is that the self-cleaning system for the heat treatment process of this embodiment further includes an alarm unit 305. The alarm unit 305 is connected to the production execution system 401 and the self-cleaning program execution unit 303, and sends alarm information to relevant engineering personnel when the wafers of the batch to be processed that require the execution of the self-cleaning program arrive at the station and when the self-cleaning program does not achieve the cleaning effect.

[0076] Same as the first embodiment, as Figure 3 As shown in the figure, in this embodiment, the wafer 402d is placed on the wafer stage 402c, and a heating device 402b composed of a plurality of lamp heating unit arrays is arranged above it, which is used to perform high-temperature annealing on the wafer 402d. The batch information acquisition unit 301 acquires the doping substance, doping concentration, and heat treatment target temperature of the wafers of the batch to be processed from the production execution system 401; the temperature monitoring unit 302 is connected to the temperature measuring probe 402a of the process chamber 402, and acquires the temperature change data of the process chamber 402 during the heat treatment process from the temperature measuring probe 402a; the self-cleaning program execution unit 303 is connected to the batch information acquisition unit 301, the temperature monitoring unit 302, and the process chamber 402, and judges whether the temperature measuring probe 402a is attached with by-products according to the temperature change data of the process chamber 402 during the heat treatment process, and judges whether to control the process chamber 402 to execute the self-cleaning program according to the doping substance, doping concentration, and heat treatment target temperature of the wafers of the batch to be processed; the dummy wafer process unit 304 is connected to the self-cleaning program execution unit 303 and the process chamber 402; the self-cleaning program execution unit 303 controls the dummy wafer process unit 304 to execute the dummy wafer process after the heat treatment process, and the self-cleaning program execution unit 303 judges whether the self-cleaning program achieves the cleaning effect according to the temperature change data of the process chamber 402 during the dummy wafer process. The dummy wafer process unit 304 includes several dummy wafers that can be used to execute the dummy wafer process, and loads the dummy wafers into the process chamber 402 when the dummy wafer process needs to be executed.

[0077] By setting the alarm unit 305, the self-cleaning system for the heat treatment process of this embodiment can send alarm information to relevant engineering personnel when the wafers of the batch to be processed that require the execution of the self-cleaning program arrive at the station and when the self-cleaning program does not achieve the cleaning effect. Relevant engineering personnel such as process engineers and equipment engineers can monitor the temperature change curve in real time during the heat treatment process that needs attention to judge whether it is necessary to introduce the self-cleaning program and even whether it is necessary to maintain the equipment. And during the dummy wafer process after the execution of the self-cleaning program, if the temperature change curve shows that the by-products on the temperature measuring probe may still not be removed cleanly by the self-cleaning program, the alarm unit 305 will also alarm relevant engineering personnel in time to handle equipment abnormalities in time.

[0078] In summary, the present application provides a self-cleaning system and method for the heat treatment process of a process chamber. The self-cleaning system for the heat treatment process of the process chamber includes: a batch information acquisition unit, which acquires the doping substance and doping concentration of the wafers in the batch to be processed from the production execution system; a temperature monitoring unit, which is connected to the temperature measuring probe of the process chamber and acquires the temperature change data of the process chamber during the heat treatment process from the temperature measuring probe; a self-cleaning program execution unit, which is connected to the batch information acquisition unit, the temperature monitoring unit and the process chamber, determines whether the temperature measuring probe is attached with by-products according to the temperature change data of the process chamber during the heat treatment process, and determines whether to control the process chamber to execute the self-cleaning program according to the doping substance and doping concentration of the wafers in the batch to be processed. The present application determines whether to control the process chamber to execute the self-cleaning program by acquiring the doping substance and concentration of the wafers in the batch to be processed, and evaluates the cleaning effect of the self-cleaning program by monitoring the temperature change data during the heat treatment process and the dummy wafer process, that is, formulates different cleaning programs for different products, and minimizes the loss of product scrapping caused by temperature anomalies brought by pollutants as much as possible while minimizing the process time as much as possible.

[0079] The above embodiments are only illustrative of the principles and effects of the present application, and are not intended to limit the present application. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present application. Therefore, all equivalent modifications or changes completed by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed in the present application should still be covered by the claims of the present application.

Claims

1. A self-cleaning system for the heat treatment process of a process chamber, characterized in that, Including: A batch information acquisition unit, which acquires the doping substance and doping concentration of the wafers in the batch to be processed from the production execution system; A temperature monitoring unit, which is connected to the temperature measuring probe of the process chamber and acquires the temperature change data of the process chamber during the heat treatment process from the temperature measuring probe; A self-cleaning program execution unit, which is respectively connected to the batch information acquisition unit, the temperature monitoring unit and the process chamber, determines whether the temperature measuring probe is attached with by-products according to the temperature change data of the process chamber during the heat treatment process, and determines whether to control the process chamber to execute the self-cleaning program according to the doping substance and doping concentration of the wafers in the batch to be processed.

2. The self-cleaning system for the heat treatment process of the process chamber according to claim 1, wherein, It further includes a dummy wafer process unit and / or an alarm unit. The dummy wafer process unit is respectively connected to the self-cleaning program execution unit and the process chamber; the self-cleaning program execution unit controls the dummy wafer process unit to execute the dummy wafer process after the heat treatment process, and the self-cleaning program execution unit determines whether the self-cleaning program achieves the cleaning effect according to the temperature change data of the process chamber during the dummy wafer process; the alarm unit is respectively connected to the production execution system and the self-cleaning program execution unit, and sends alarm information to relevant engineering personnel when the wafers in the batch to be processed that need to execute the self-cleaning program arrive at the station and when the self-cleaning program does not achieve the cleaning effect.

3. The self-cleaning system for the process chamber heat treatment process according to claim 1, characterized in that, The self-cleaning program includes purging the process chamber with an inert gas at the sublimation temperature of the by-products generated during the heat treatment process, and the flow rate of the inert gas purge is 30 L / min to 35 L / min; the process time of the self-cleaning program is 20 min to 25 min; the process temperature of the self-cleaning program is 850 °C to 950 °C.

4. The self-cleaning system for the heat treatment process of the process chamber according to claim 3, characterized in that, The doping substance of the batch of wafers to be processed is P; the by-product of the heat treatment process is P2O5; the doping concentration of the batch of wafers to be processed is greater than 1×10 15 ions / cm 3 .

5. The self-cleaning system for the process chamber heat treatment process according to any one of claims 1-4, characterized in that, The batch information acquisition unit further acquires the heat treatment target temperature of the wafers in the batch to be processed from the production execution system, and when the heat treatment target temperature is greater than a certain value, the self-cleaning program execution unit triggers the self-cleaning program.

6. A self-cleaning method for the heat treatment process of a process chamber, characterized in that, Including the following steps: Before processing the wafers in the batch to be processed in the process chamber, acquire the doping substance and doping concentration of the wafers in the batch to be processed; When processing the wafers in the batch to be processed in the process chamber, acquire the temperature change data of the process chamber during the heat treatment process; Determine whether the temperature measuring probe is attached with by-products according to the temperature change data, and determine whether the process chamber needs to execute the self-cleaning program according to the doping substance and doping concentration of the wafers in the batch to be processed; If the self-cleaning program needs to be executed, control the process chamber to execute the self-cleaning program.

7. The self-cleaning method for the process chamber heat treatment process according to claim 6, characterized in that, After the heat treatment process, it further includes the step of performing a dummy wafer process in the process chamber, and determines whether the self-cleaning program achieves the cleaning effect according to the temperature change data of the process chamber during the dummy wafer process.

8. The self-cleaning method for the heat treatment process of the process chamber according to claim 6, wherein The self-cleaning process includes purging the process chamber with an inert gas at the sublimation temperature of the by-products generated during the heat treatment process, and the flow rate of the inert gas purge is from 30 L / min to 35 L / min; the process time of the self-cleaning process is from 20 min to 25 min; the process temperature of the self-cleaning process is from 850 °C to 950 °C.

9. The self-cleaning method for the process chamber heat treatment process according to claim 8, wherein The doping substance of the batch of wafers to be processed is P; the by-product of the heat treatment process is P2O5; the doping concentration of the batch of wafers to be processed is greater than 1×10 15 ions / cm 3 .

10. The self-cleaning method for the heat treatment process of the process chamber according to any one of claims 6-9, characterized in that, When the heat treatment target temperature of the wafer batch to be processed is greater than a certain value, the process chamber executes the self-cleaning process.

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