A processing method of an electronic device and an electronic device

Abstract

The present application discloses a processing method and an electronic device for an electronic device, including: forming a patterned metal wiring layer on at least one surface of a substrate; forming an insulating dielectric layer on the surface of the metal wiring layer, and the insulating dielectric layer located on the first surface of the substrate is flush with at least a part of the metal wiring layer; reducing the height of the metal wiring layer flush with the insulating dielectric layer so that the insulating dielectric layer and the metal wiring layer located on the first surface form a plurality of first grooves; using a transfer device to simultaneously transfer a plurality of solder joints into the plurality of first grooves and perform soldering treatment; wherein, a preformed solder is provided on the soldering surface of the solder joint facing the first groove, and one first groove accommodates one solder joint. Through this design method, the accuracy of solder coverage in the mass transfer process can be ensured.

Description

Technical Field

[0001] This application relates to the technical field of printed circuit boards, and particularly to a processing method for electronic devices and an electronic device. Background Art

[0002] At present, solder mask inks are printed on the upper and lower surfaces of printed circuit boards as insulating dielectric layers. The positions that need to be soldered are exposed to the conductor layer by openings in the solder mask ink. Solder is printed at the exposed conductor layer positions, and then components or chips / wafers are placed for soldering. Moreover, the height of the solder mask ink above the surface of the conductor layer at the soldering positions needs to be separately controlled according to the components or chips / wafers to be soldered. In addition, the size of the printed circuit board and the density of the soldering positions directly affect the accuracy of solder coverage during the soldering process. In the mass transfer process, problems such as solder missing printing or printing deviation are likely to occur, which easily lead to poor soldering problems during subsequent component or chip / wafer transfer soldering. Summary of the Invention

[0003] The main technical problem to be solved by this application is to provide a processing method for electronic devices and an electronic device, which can ensure the accuracy of solder coverage in the mass transfer process.

[0004] To solve the above technical problem, a technical solution adopted by this application is: to provide a processing method for electronic devices, including: forming a patterned metal circuit layer on at least one surface of a substrate; forming an insulating dielectric layer on the surface of the metal circuit layer, and the insulating dielectric layer located on the first surface of the substrate is flush with at least part of the metal circuit layer; reducing the height of the metal circuit layer flush with the insulating dielectric layer so that the insulating dielectric layer and the metal circuit layer on the first surface form a plurality of first grooves; using a transfer device to simultaneously transfer a plurality of welding parts into the plurality of first grooves and perform welding processing; wherein, a preformed solder is provided on the welding surface of the welding part facing the first groove, and one first groove accommodates one welding part.

[0005] Among them, the transfer device includes a carrier, a vacuum component, and a transfer component; wherein, the carrier includes a plurality of second grooves arranged in an array, one second groove is used to accommodate one welding part, and a through suction hole is provided at the bottom of the second groove, and the vacuum component is communicated with the suction hole; the transfer component is used to transfer the welding part and / or the carrier.

[0006] Among them, the step of using the transfer device to transfer a plurality of welded parts into the plurality of first grooves simultaneously includes: using the transfer component to place a plurality of the welded parts in a plurality of the second grooves respectively, and the welding surface of the welded part is arranged opposite to the bottom of the second groove and exposed from the second groove; the vacuum component adsorbs the welded part through the suction holes; using the transfer component to form the pre-solder on the welding surface of the welded part; using the transfer component to transfer the carrier to above the first surface and make the welding surface arranged opposite to the first groove; the vacuum component stops adsorbing the welded part, and the welded part is transferred into the corresponding first groove.

[0007] Among them, the step of using the transfer component to form the pre-solder on the welding surface of the welded part includes: using the transfer component to place the pre-solder on the corresponding welding surfaces respectively, wherein the size of the pre-solder is related to the size of the first groove; using the transfer component to melt the pre-solder so that the pre-solder is fixed on the welding surface.

[0008] Among them, the transfer device includes a cover plate, the cover plate includes a plurality of through holes arranged in an array, the through holes correspond to the second grooves of the carrier one by one, and the size of the through holes is related to the size of the first groove; the step of using the transfer component to form the pre-solder on the welding surface of the welded part includes: buckling the cover plate on the carrier, wherein the cover plate is arranged opposite to the welding surface; using the transfer component to turn over the carrier so that the welding surface faces the solder bath, wherein the solder in the solder bath is in a molten state; immersing the cover plate and at least part of the carrier into the solder bath so that the pre-solder contacts and is fixed to the corresponding welding surface through the through holes.

[0009] Among them, the length of the pre-solder is greater than or equal to 15% of the length of the first groove and less than or equal to 95% of the length of the first groove; and / or, the width of the pre-solder is greater than or equal to 15% of the width of the first groove and less than or equal to 95% of the width of the first groove; and / or, the height of the pre-solder is greater than or equal to 15% of the height of the first groove and less than or equal to the height of the first groove.

[0010] Among them, the step of forming a patterned metal wiring layer on at least one surface of the substrate includes: providing a substrate, the substrate includes a first surface and a second surface arranged opposite to each other, and metal layers are respectively pre-coated on the first surface and the second surface; performing drilling treatment from one side of the first surface to form a plurality of holes, the holes at least penetrate the metal layer on the first surface and the substrate; forming a photosensitive anti-reflection coating on one side of the first surface and the second surface, and a first opening is provided at a position of the photosensitive anti-reflection coating on one side of the first surface corresponding to the holes, and the holes and a part of the metal layer adjacent to the holes are exposed from the first opening; electroplating metal columns in the first opening and the holes; removing all the photosensitive anti-reflection coatings; forming a photosensitive anti-etching film on one side of the first surface and the second surface, and positions corresponding to the metal columns on each side are covered by the photosensitive anti-etching film, and at least some of the remaining positions are not covered by the photosensitive anti-etching film; removing the metal layer not covered by the photosensitive anti-etching film to form a patterned metal wiring layer; removing the photosensitive anti-etching film.

[0011] Among them, the step of forming an insulating dielectric layer on the surface of the metal wiring layer, and the insulating dielectric layer on the first surface of the substrate is flush with at least part of the metal wiring layer includes: forming an insulating dielectric layer on the surface of the metal wiring layer, and the insulating dielectric layer covers the metal wiring layer; grinding the insulating dielectric layer until the metal columns are exposed from the insulating dielectric layer, and the metal columns are flush with the insulating dielectric layer.

[0012] Among them, the step of reducing the height of the metal wiring layer flush with the insulating dielectric layer includes: reducing the height of the metal columns on the first surface by chemical copper reduction; or reducing the height of the metal columns on the first surface by UV laser drilling ablation and / or laser milling; or reducing the height of the metal columns on the first surface by CO2 laser drilling ablation.

[0013] To solve the above technical problems, another technical solution adopted by this application is: providing an electronic device formed by the processing method mentioned in any of the above embodiments.

[0014] Differing from the prior art, the beneficial effects of the present application are as follows: An insulating dielectric layer is formed on the surface of the metal wiring layer, and the insulating dielectric layer located on the first surface of the substrate is flush with at least a part of the metal wiring layer, reducing the height of the metal wiring layer flush with the insulating dielectric layer, so that the insulating dielectric layer and the metal wiring layer on the first surface form a plurality of first grooves. Then, a transfer device is used to simultaneously transfer a plurality of welding parts into the plurality of first grooves and perform welding treatment. Among them, a preformed solder is provided on the welding surface of the welding part facing the first groove, and one first groove accommodates one welding part. Through this design method, the accuracy of solder coverage in the mass transfer process can be ensured, and the problem of mass transfer failure caused by abnormal solder coverage can be avoided. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts. Among them:

[0016] Figure 1 is a schematic flowchart of an implementation manner of the processing method of the electronic device of the present application;

[0017] Figure 2 is a schematic structural diagram of a welding part with preformed solder in an implementation manner;

[0018] Figure 3 is Figure 1 a schematic structural diagram of an implementation manner corresponding to steps S1-S4 in

[0019] Figure 4 is Figure 1 a schematic flowchart of an implementation manner of step S1 in

[0020] Figure 5 is Figure 4 a schematic structural diagram of an implementation manner corresponding to steps S11-S18 in

[0021] Figure 6 is Figure 1 a schematic flowchart of an implementation manner of step S2 in

[0022] Figure 7 is Figure 6 a schematic structural diagram of an implementation manner corresponding to steps S21-S22 in

[0023] Figure 8 is a schematic structural diagram of a transfer device in step S4 in an implementation manner;

[0024] Figure 9 It is a schematic structural diagram of an embodiment of the cover plate in the transfer device;

[0025] Figure 10 It is Figure 1 a schematic flow diagram of an embodiment of step S4 in;

[0026] Figure 11 It is Figure 10 a schematic flow diagram of an embodiment of step S33 in;

[0027] Figure 12 It is Figure 10 a schematic flow diagram of another embodiment of step S33 in;

[0028] Figure 13 It is a schematic structural diagram of an embodiment of the electronic device of the present application. Specific Embodiments

[0029] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative efforts shall fall within the scope of protection of the present application.

[0030] Please refer to Figures 1 - 3 , Figure 1 It is a schematic flow diagram of an embodiment of the processing method of the electronic device of the present application, Figure 2 It is a schematic structural diagram of an embodiment of the welded part of the prefabricated solder, Figure 3 It is Figure 1 a schematic structural diagram of an embodiment corresponding to steps S1 - S4 in. The processing method includes:

[0031] S1: Form a patterned metal wiring layer 18 on at least one side (not shown in the figure) surface of the substrate 10.

[0032] Specifically, in this embodiment, as Figure 3 shown in a, form a patterned metal wiring layer 18 on at least one side surface of the substrate 10. The specific implementation will be described in detail below.

[0033] Specifically, please refer to Figures 4 - 5 , Figure 4 It is Figure 1 a schematic flow diagram of an embodiment of step S1 in, Figure 5 It is Figure 4 a schematic structural diagram of an embodiment corresponding to steps S11 - S18 in. Step S1 specifically includes:

[0034] S11: Provide a substrate 10, the substrate 10 includes a first surface 100 and a second surface 102 arranged back to back, and metal layers 12 are pre - covered on the first surface 100 and the second surface 102 respectively.

[0035] Specifically, in this embodiment, as Figure 5 shown in a, when the substrate 10 is a dielectric layer, metal layers 12 are covered on the first surface 100 and the second surface 102 of the substrate 10 respectively. Among them, the material of the metal layer 12 can be copper or other metal materials, and this application does not limit this. Of course, the substrate 10 can also be a double - sided copper - clad board. When the substrate 10 is a double - sided copper - clad board, the substrate 10 includes a dielectric layer and copper layers or other metal materials on both side surfaces of the substrate 10. At this time, step S11 can be skipped and directly enter step S12, and this application does not limit this here.

[0036] S12: Perform drilling treatment from the side of the first surface 100 to form a plurality of holes 104, and the holes 104 at least penetrate the metal layer 12 located on the first surface 100 and the substrate 10.

[0037] Specifically, as Figure 5 shown in b, drilling treatment can be performed from the side of the first surface 100 by means such as laser drilling and mechanical drilling to form a plurality of holes 104, and this is not limited here. In addition, in this embodiment, the holes 104 can be micro - blind holes that penetrate the metal layer 12 located on the first surface 100 and the substrate 10. Of course, in other embodiments, the holes 104 can also be through - holes that penetrate the metal layers 12 on the first surface 100 and the second surface 102 and the substrate 10, and this application does not limit this.

[0038] S13: Form a photosensitive anti - plating film 14 on one side of the first surface 100 and the second surface 102, and a first opening 106 is provided at the position of the photosensitive anti - plating film 14 corresponding to the holes 104 on the side of the first surface 100, and the holes 104 and a part of the metal layer 12 adjacent to the holes 104 are exposed from the first opening 106.

[0039] Specifically, the photosensitive anti - plating film 14 formed on one side of the first surface 100 and the second surface 102 can produce a polymerization reaction after being irradiated by a specific light source, that is, a reaction process of synthesizing polymers from monomers, to form a stable substance attached to the plate surface, so as to achieve the function of blocking electroplating. Specifically, a plurality of first openings 106 arranged at intervals can be formed on the photosensitive anti - plating film 14 by chemical dissolution or other means, and this is not limited here.

[0040] S14: Electroplate metal posts 108 in the first openings 106 and the holes 104.

[0041] Specifically, in this embodiment, before electroplating filling, the first opening 106 and the holes 104 can be subjected to desmearing treatment and hole metallization treatment. Among them, the hole metallization treatment can include at least one of electroless copper plating treatment, black hole treatment, and black shadow treatment, which is not limited herein. The methods of desmearing treatment and hole metallization treatment can be any method in the prior art and will not be elaborated herein.

[0042] In addition, in this embodiment, as Figure 5 shown in FIGS. 5c and 5d, a metal pillar 108 is formed by electroplating the first opening 106 and the holes 104. The filling material is the same as that of the metal layer 12, which can be copper or other metal materials, which is not limited herein.

[0043] S15: Remove all photosensitive anti-plating films 14.

[0044] Specifically, in this embodiment, as Figure 5 shown in FIG. 5d, the photosensitive anti-plating film 14 can be removed by chemical dissolution to form the structure shown in Figure 5 FIG. 5e, or other methods can be used to remove the photosensitive anti-plating film 14, which is not limited in this application.

[0045] S16: Form a photosensitive anti-etching film 16 on one side of the first surface 100 and the second surface 102, and the positions corresponding to the metal pillars 108 on each side are covered by the photosensitive anti-etching film 16, and at least some of the remaining positions are not covered by the photosensitive anti-etching film 16.

[0046] Specifically, as Figure 5 shown in FIG. 5f, the photosensitive anti-etching film 16 formed on one side of the first surface 100 and the second surface 102 can produce a polymerization reaction after being irradiated by a specific light source, that is, a reaction process of synthesizing polymers from monomers, and form a stable substance attached to the board surface, so as to achieve the function of blocking etching.

[0047] S17: Remove the metal layer 12 not covered by the photosensitive anti-etching film 16 to form a patterned metal wiring layer 18.

[0048] Specifically, as Figure 5 shown in FIG. 5g, the metal layer 12 not covered by the photosensitive anti-etching film 16 can be etched or other treatment methods. The etching method can be any method in the prior art and will not be elaborated herein.

[0049] S18: Remove the photosensitive anti-etching film 16.

[0050] Specifically, in this embodiment, the photosensitive anti-etching film 16 can be removed by chemical dissolution to form the structure shown in Figure 5For the metal wiring layer 18 shown in h, other methods can also be used to remove the photosensitive resist film 16 to form the metal wiring layer 18, which is not limited in this application.

[0051] S2: Form an insulating dielectric layer 11 on the surface of the metal wiring layer 18, and the insulating dielectric layer 11 located on the first surface 100 of the substrate 10 is flush with at least part of the metal wiring layer 18.

[0052] Specifically, as Figure 3 shown in b, the insulating dielectric layer 11 can be ink, or insulating dielectric layer materials such as epoxy resin, phenolic resin, polyimide, BT, ABF, ceramic base, etc. When the insulating dielectric layer 11 is ink, the insulating dielectric layer 11 located on the first surface 100 of the substrate 10 can be made flush with at least part of the metal wiring layer 18 without pressing the ink. When the insulating dielectric layer 11 is other insulating dielectric layer materials, the insulating dielectric layer 11 needs to be pressed to make the insulating dielectric layer 11 located on the first surface 100 of the substrate 10 flush with at least part of the metal wiring layer 18.

[0053] Please refer to Figures 6 - 7 , Figure 6 which is Figure 1 a schematic flow chart of an implementation manner of step S2 in Figure 7 and Figure 6 is a schematic structural diagram of an implementation manner corresponding to steps S21 - S22 in

[0054] S21: Form an insulating dielectric layer 11 on the surface of the metal wiring layer 18, and the insulating dielectric layer 11 covers the metal wiring layer 18.

[0055] Specifically, in this embodiment, as Figure 7 shown in a, the insulating dielectric layer 11 can be insulating dielectric layer materials such as ink, epoxy resin, phenolic resin, polyimide, BT, ABF, ceramic base, etc. In addition, before the step of pressing the insulating dielectric layer 11, a surface release film (not shown in the figure) is covered on the surface of the insulating dielectric layer 11 to protect the insulating dielectric layer 11.

[0056] S22: Grind the insulating dielectric layer 11 until the metal posts 108 are exposed from the insulating dielectric layer 11 and the metal posts 108 are flush with the insulating dielectric layer 11.

[0057] ​Specifically, before grinding the insulating dielectric layer 11, the surface release film or the copper foil on the surface of the metal wiring layer 18 can be removed by any method in the prior art, and the method is not limited herein. Additionally, in this embodiment, surface grinding can be performed by methods such as leveling, brushing, laser ablation, ion cutting, ion polishing, water jet, etc., until some of the metal posts 108 are exposed from the insulating dielectric layer 11 and some of the metal posts 108 are flush with the insulating dielectric layer 11, as shown in Figure 7 as shown in Fig. b.

[0058] In this way, the metal posts 108 exposed from the insulating dielectric layer 11 are the welding positions, and other non-welding positions are covered by the insulating dielectric layer 11, which can ensure accurate positioning of the welding positions in the mass transfer process.

[0059] S3: Reduce the height of the metal wiring layer 18 flush with the insulating dielectric layer 11, so that a plurality of first grooves 110 are formed in the insulating dielectric layer 11 and the metal wiring layer 18 located on the first surface 100.

[0060] Specifically, in this embodiment, as shown in Figure 3 Fig. c, the height of the metal posts 108 located on the first surface 100 can be reduced by chemical copper reduction, or the height of the metal posts 108 located on the first surface 100 can be reduced by UV laser drilling ablation and / or laser milling, or the height of the metal posts 108 located on the first surface 100 can be reduced by CO2 laser drilling ablation, and the application is not limited herein. Through this design method, first grooves 110 with a specified depth can be formed at the position of the metal wiring layer 18, and the accuracy of solder coverage can be ensured in the mass transfer process.

[0061] S4: Use a transfer device to transfer a plurality of welding parts 13 into a plurality of first grooves 110 simultaneously and perform welding processing.

[0062] Specifically, in this embodiment, as shown in Figure 3 Fig. d, a preformed solder 15 is provided on the welding surface 130 of the welding part 13 facing the first groove 110, and one first groove 110 accommodates one welding part 13.

[0063] Specifically, please refer to Figure 2 for reference Figure 8 , Figure 8It is a schematic structural diagram of an embodiment of the transfer device in step S4. The transfer device 2 includes a carrier 20, a vacuum assembly 22, and a transfer assembly (not shown in the figure). Specifically, the carrier 20 includes a plurality of second grooves 200 arranged in an array. One second groove 200 is used to accommodate one welding piece 13, and a through suction hole 202 is provided at the bottom of the second groove 200 (not shown in the figure). The vacuum assembly 22 is communicated with the suction hole 202 for adsorbing or releasing the welding piece 13 through the suction hole 202. Among them, the shape of the suction hole 202 is not limited, and it can be circular or square. In addition, in this embodiment, the transfer assembly is used to transfer the welding piece 13 or the carrier 20 or both the welding piece 13 and the carrier 20, and form a pre-solder 15 on the welding surface 130 of the welding piece 13.

[0064] Specifically, as Figure 8 shown, a plurality of positioning holes 204 are provided at the edge of the carrier 20 (not shown in the figure), and the transfer assembly is positioned through the plurality of positioning holes 204.

[0065] Specifically, in this embodiment, the carrier 20 includes four positioning holes 204. As Figure 8 shown, the four positioning holes 204 are respectively located at the four corners 206 of the carrier 20.

[0066] In addition, in this embodiment, the transfer assembly includes a clamping member 240. Of course, the shape of the clamping member 240 and the clamping form can be other as long as it can transfer objects, and the present application does not limit this. Specifically, the clamping member 240 is used to place a plurality of welding pieces 13 in a plurality of first grooves 110 respectively, and the welding surface 130 of the welding piece 13 is arranged opposite to the bottom of the first groove 110 and exposed from the first groove 110. In addition, in this embodiment, the number of the clamping members 240 can be one or more, and one clamping member 240 can transfer one or more welding pieces 13 at a time, and this is not limited. Of course, the clamping member 240 can also be used to transfer the pre-solder 15 onto the welding surface 130. Specifically, the transfer assembly further includes a heating member (not shown in the figure). The present application does not limit the shape of the heating member as long as it can heat. The working form of the heating member can be laser heating or other methods, which is not limited here. In addition, in this embodiment, the heating member is used to heat the pre-solder 15 while the pre-solder 15 is transferred onto the welding surface 130 so that the pre-solder 15 is fixed to the welding surface 130.

[0067] Specifically, the heating member can be fixedly arranged on the clamping member 240, or the heating member can also be fixedly arranged inside the clamping member 240. The present application does not limit the position of the heating member.

[0068] Please refer to Figure 2 and Figure 8 for referenceFigure 9 , Figure 9 is a schematic structural diagram of an embodiment of the cover plate in the transfer device. Specifically, the transfer device 2 further includes a cover plate 26. The cover plate 26 includes a plurality of through holes 260 arranged in an array. The through holes 260 correspond one-to-one with the second grooves 200 of the carrier 20, and the size of the through holes 260 is related to the size of the first grooves 110. Specifically, please refer to Figure 8 and Figure 9 . The length of the through hole 260 is greater than or equal to 15% of the length of the second groove 200 and less than or equal to 95% of the length of the second groove 200. The width of the through hole 260 is greater than or equal to 15% of the width of the second groove 200 and less than or equal to 95% of the width of the second groove 200. The height of the through hole 260 is greater than or equal to 15% of the height of the second groove 200 and less than or equal to the height of the second groove 200. The height of the second groove 200 is the height that the insulating dielectric layer is higher than the metal circuit layer. The size of the pre-solder 15 obtained in this way is also related to the second groove 200, and further, the accuracy of the size of the pre-solder 15 on the welded part 13 can be guaranteed, so that the probability of welding failure caused by abnormal solder coverage during the welding process can be reduced.

[0069] Specifically, please combine Figure 2 and Figure 8 to refer to Figure 10 , Figure 10 is Figure 1 a schematic flowchart of an embodiment of step S4 in

[0070] S31: Use the transfer component to place a plurality of welded parts 13 in a plurality of second grooves 200 respectively, and the welding surface 130 of the welded part 13 is arranged opposite to the bottom of the second groove 200 and exposed from the second groove 200.

[0071] Specifically, use the clamping part 240 in the transfer component to place the welded parts 13 in the corresponding first grooves 110 of the carrier 20 respectively. Before this step, use a plurality of positioning holes 204 on the edge of the carrier 20 to position the transfer component. Specifically, it can be fixed by screws or other methods, which is not limited here.

[0072] S32: The vacuum component 22 adsorbs the welded part 13 through the suction holes 202.

[0073] S33: Use the transfer component to form pre-solder 15 on the welding surface 130 of the welded part 13.

[0074] Specifically, please combine Figure 2 and Figure 8 to refer to Figure 11 , Figure 11 is Figure 10Flow schematic diagram of an implementation manner of step S33. Step S33 specifically includes:

[0075] S41: Use the transfer component to place the prefabricated solder 15 on the corresponding welding surface 130 respectively.

[0076] Specifically, use the clamping member 240 to place the prefabricated solder 15 on the corresponding welding surface 130 respectively. In addition, in this embodiment, the prefabricated solder 15 is pre-cut into a preset size, and the size of the prefabricated solder 15 is related to the size of the first groove 110. Specifically, the length of the prefabricated solder 15 is greater than or equal to 15% of the length of the first groove 110 and less than or equal to 95% of the length of the first groove 110, the width of the prefabricated solder 15 is greater than or equal to 15% of the width of the first groove 110 and less than or equal to 95% of the width of the first groove 110, the height of the prefabricated solder 15 is greater than or equal to 15% of the height of the first groove 110 and less than or equal to the height of the first groove 110, and the height of the first groove 110 is the height that the insulating dielectric layer 11 protrudes from the metal wiring layer 18. During mass transfer, the specifications of each chip / wafers within the same pass are the same, and the sizes of each welding position, that is, the first grooves 110, are consistent, and they are coordinated and matched with the prefabricated solder 15 after cutting. In this way, the accuracy of the size of the prefabricated solder 15 on the welded part 13 can be guaranteed, thereby reducing the probability of welding failure caused by abnormal solder coverage during the mass transfer process.

[0077] S42: Use the transfer component to melt the prefabricated solder 15 so that the prefabricated solder 15 is fixed on the welding surface 130.

[0078] Specifically, use the heating member to melt the prefabricated solder 15 so that the prefabricated solder 15 is fixed on the welding surface 130. The heating member performs high-temperature heating on the prefabricated solder 15, and the heating time is 0.1 s - 10 s. For example, 0.1 s, 0.2 s, 0.4 s, 0.6 s, 0.8 s, 2 s, 4 s, 6 s, 8 s, 10 s, etc., which are not limited herein.

[0079] In this way, the accuracy of solder coverage in the mass transfer process can be guaranteed, avoiding welding failure caused by abnormal solder coverage and achieving precise welding.

[0080] Specifically, please refer to Figure 2 , Figure 8 and Figure 9 refer to Figure 12 , Figure 12 is Figure 10 Flow schematic diagram of another implementation manner of step S33 in. Step S33 specifically includes:

[0081] S51: Snap the cover plate 26 onto the carrier 20.

[0082] Specifically, the cover plate 26 is disposed opposite to the welding surface 130 of the welded part 13. The cover plate 26 and the carrier 20 can be fastened by screws or by snap-fit installation, as long as the cover plate 26 and the carrier 20 can be fixed, and no limitation is made here.

[0083] S52: Use the transfer assembly to flip the carrier 20 so that the welding surface 130 faces the solder bath (not shown in the figure).

[0084] Specifically, in this embodiment, the carrier 20 can be flipped by the clamping member 240 of the transfer assembly. Of course, in other embodiments, other tools can also be used to flip the carrier 20, and no limitation is made here. In addition, in this embodiment, the solder in the solder bath is in a molten state.

[0085] S53: Immerse the cover plate 26 and at least part of the carrier 20 into the solder bath so that the prefabricated solder 15 contacts and fixes the welding surface 130 at the corresponding position through the through hole 260.

[0086] Specifically, immerse the cover plate 26 and at least part of the carrier 20 into the solder bath, and the immersion time is 2 s - 200 s. For example, 2 s, 5 s, 10 s, 20 s, 40 s, 60 s, 80 s, 100 s, 150 s, 200 s, etc. No limitation is made in this application.

[0087] The size of the prefabricated solder 15 obtained in this way is also related to the first groove 110. During mass transfer, the specifications of the chips / wafers in the same pass are the same, and the sizes of the welding positions, that is, the first grooves 110, are consistent, and are coordinated and matched with the prefabricated solder 15. In this way, the accuracy of the size of the prefabricated solder 15 on the welded part 13 can be ensured, thereby reducing the probability of welding failure caused by abnormal solder coverage during the mass transfer process.

[0088] S34: Use the transfer assembly to transfer the carrier 20 above the first surface 100 and make the welding surface 130 disposed opposite to the first groove 110.

[0089] Specifically, before this step, the cover plate 26 is removed, leaving the prefabricated solder 15 fixed to the welding surface 130 of the welded part 13. Use the clamping member 240 to transfer the carrier 20 above the first surface 100.

[0090] S35: The vacuum assembly stops adsorbing the welded part, and the welded part is transferred into the first groove at the corresponding position.

[0091] In this way, the accuracy of the size of the prefabricated solder 15 on the welded part 13 can be ensured, thereby reducing the probability of welding failure caused by abnormal solder coverage during the mass transfer process.

[0092] Please refer to Figure 13 , Figure 13 which is a schematic structural diagram of an embodiment of the electronic device of the present application. The electronic device 3 is formed by the processing method mentioned in any of the above embodiments, which will not be elaborated here, and can reduce the probability of welding failure caused by abnormal solder coverage in the mass transfer process.

[0093] In summary, different from the prior art, the present application controls the depth of the welding position on the metal wiring layer to a specified height to form a first groove with a specified size, and uses a transfer device to transfer multiple welding parts into multiple first grooves simultaneously and perform welding processing. Through this design method, the accuracy of solder coverage in the mass transfer process can be guaranteed, avoiding the problem of mass transfer failure caused by abnormal solder coverage, and realizing precise welding in the mass transfer process.

[0094] The above is only the embodiment of the present application, and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present application, or directly or indirectly applied in other related technical fields, shall be included in the patent protection scope of the present application by the same token.

Claims

1. A processing method for an electronic device, characterized in that, Comprising: Forming a patterned metal circuit layer on at least one surface of a substrate; Forming an insulating dielectric layer on the surface of the metal circuit layer, and the insulating dielectric layer located on the first surface of the substrate is flush with at least part of the metal circuit layer; Reducing the height of the metal circuit layer flush with the insulating dielectric layer, so that the insulating dielectric layer and the metal circuit layer located on the first surface form a plurality of first grooves; Using a transfer device to simultaneously transfer a plurality of welding parts into the plurality of first grooves and performing welding treatment; wherein, a preformed solder is provided on the welding surface of the welding part facing the first groove, and one of the first grooves accommodates one of the welding parts; The transfer device includes a carrier, a vacuum assembly and a transfer assembly; Wherein, the carrier includes a plurality of second grooves arranged in an array, one of the second grooves is used to accommodate one of the welding parts, and a through suction hole is provided at the bottom of the second groove, and the vacuum assembly is communicated with the suction hole; the transfer assembly is used to transfer the welding part and / or the carrier; The step of using the transfer device to simultaneously transfer a plurality of welding parts into the plurality of first grooves includes: Using the transfer assembly to respectively place a plurality of the welding parts in a plurality of the second grooves, and the welding surface of the welding part is arranged opposite to the bottom of the second groove and exposed from the second groove; The vacuum assembly adsorbs the welding part through the suction hole; Using the transfer assembly to form the preformed solder on the welding surface of the welding part; Using the transfer assembly to transfer the carrier above the first surface and making the welding surface arranged opposite to the first groove; The vacuum assembly stops adsorbing the welding part, and the welding part is transferred into the corresponding first groove.

2. The processing method according to claim 1, wherein, The step of using the transfer assembly to form the preformed solder on the welding surface of the welding part includes: Using the transfer assembly to respectively place the preformed solder on the corresponding welding surfaces, wherein the size of the preformed solder is related to the size of the first groove; Using the transfer assembly to melt the preformed solder so that the preformed solder is fixed on the welding surface.

3. The processing method according to claim 1, characterized in that, The transfer device includes a cover plate, the cover plate includes a plurality of through holes arranged in an array, the through holes correspond to the second grooves of the carrier one by one, and the size of the through holes is related to the size of the first groove; The step of using the transfer assembly to form the preformed solder on the welding surface of the welding part includes: Clamping the cover plate on the carrier, wherein the cover plate is arranged opposite to the welding surface; Using the transfer assembly to turn over the carrier so that the welding surface faces a solder bath, wherein the solder in the solder bath is in a molten state; Immersing the cover plate and at least part of the carrier into the solder bath so that the preformed solder contacts and is fixed to the corresponding welding surface through the through hole.

4. The processing method according to claim 2 or 3, characterized in that, The length of the pre - formed solder is greater than or equal to 15% of the length of the first groove and less than or equal to 95% of the length of the first groove; and / or, the width of the pre - formed solder is greater than or equal to 15% of the width of the first groove and less than or equal to 95% of the width of the first groove; and / or, the height of the pre - formed solder is greater than or equal to 15% of the height of the first groove and less than or equal to the height of the first groove.

5. The processing method according to claim 1, characterized in that, The step of forming a patterned metal wiring layer on at least one surface of the substrate includes: providing a substrate, the substrate includes a first surface and a second surface arranged opposite to each other, and metal layers are pre - covered on the first surface and the second surface respectively; drilling holes from one side of the first surface to form a plurality of holes, and the holes penetrate at least the metal layer on the first surface and the substrate; forming a photosensitive anti - coating film on one side of the first surface and the second surface, and a first opening is provided in the photosensitive anti - coating film on one side of the first surface corresponding to the position of the holes, and the holes and a part of the metal layer adjacent to the holes are exposed from the first opening; electroplating metal columns in the first opening and the holes; removing all the photosensitive anti - coating films; forming a photosensitive anti - etching film on one side of the first surface and the second surface, and the positions corresponding to the metal columns on each side are covered by the photosensitive anti - etching film, and at least some of the remaining positions are not covered by the photosensitive anti - etching film; removing the metal layer not covered by the photosensitive anti - etching film to form a patterned metal wiring layer; removing the photosensitive anti - etching film.

6. The processing method according to claim 5, characterized in that, The step of forming an insulating dielectric layer on the surface of the metal wiring layer and making the insulating dielectric layer on the first surface of the substrate flush with at least a part of the metal wiring layer includes: forming an insulating dielectric layer on the surface of the metal wiring layer, and the insulating dielectric layer covers the metal wiring layer; grinding the insulating dielectric layer until the metal columns are exposed from the insulating dielectric layer, and the metal columns are flush with the insulating dielectric layer.

7. The processing method according to claim 6, wherein The step of reducing the height of the metal wiring layer flush with the insulating dielectric layer includes: reducing the height of the metal columns on the first surface by chemical copper reduction; or, reducing the height of the metal columns on the first surface by UV laser drilling ablation and / or laser milling; or, reducing the height of the metal columns on the first surface by CO2 laser drilling ablation.

8. An electronic device, characterized in that, The electronic device is formed by the processing method according to any one of claims 1 - 7.

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