Solar cell and method of manufacturing the same

Abstract

The application provides a solar cell and a manufacturing method thereof. The solar cell comprises a first electrode layer, a hole transport layer, a perovskite active layer, an electron transport layer and a second electrode layer which are arranged in layers; an interface modification layer is further arranged between the hole transport layer and the peroviskite active layer; the material of the interface modification layer is a two-dimensional metal organic framework material; wherein the metal organic framework material contains phosphate, and the interface modification layer is suitable for forming a C / N doped passivation layer after pyrolysis. The solar cell provided by the application has good stability and carrier transport capacity.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of solar cells, in particular to a solar cell and a manufacturing method thereof. BACKGROUND

[0002] In the research of emerging photovoltaic technology, it is necessary to develop alternative renewable energy sources that can provide high power at low manufacturing cost, and these technologies need to have the potential to replace the existing silicon photovoltaic market. Solar cells based on organic-inorganic halide perovskite absorbers (referred to as perovskite solar cells) are one of the most promising emerging photovoltaic technologies. In the past 10 years, the photoelectric conversion efficiency has rapidly increased from 3.8% in 2009 to 25.5% for single-junction cells and 29.5% for silicon / perovskite tandem cells.

[0003] However, there are still many problems to be solved in order to put perovskite solar cells into large-scale application. High performance and long-term stability are still the primary problems that hinder their practical application, however, the interface is considered to be the key part that determines the overall performance and service life of the photovoltaic device. In the prior art, interface defects are prone to occur between the perovskite layer and the hole transport layer, resulting in low photoelectric conversion efficiency of the perovskite solar cell, and the interface is also the main way for oxygen and moisture to penetrate and then cause decomposition of the entire thin film, resulting in poor stability. SUMMARY

[0004] The present application provides a solar cell and a manufacturing method thereof to improve the photoelectric conversion efficiency and stability of perovskite solar cells.

[0005] The present application provides a solar cell, comprising: a first electrode layer, a hole transport layer, a perovskite active layer, an electron transport layer and a second electrode layer which are stacked; an interface modification layer is further provided between the hole transport layer and the perovskite active layer; the material of the interface modification layer is a two-dimensional metal-organic framework material; wherein the metal-organic framework material contains phosphate, and the interface modification layer is adapted to form a C / N doped passivation layer after pyrolysis.

[0006] Optionally, the transition metal in the metal-organic framework material includes one of chromium, manganese, iron, cobalt, nickel, copper or zinc.

[0007] Optionally, the transition metal is manganese.

[0008] Optionally, the metal-organic framework material includes a nitrogen-containing bipyridine ligand structure.

[0009] The application further provides a method for manufacturing a solar cell, comprising the following steps: preparing an interface modification layer precursor; providing a first electrode layer; forming a hole transport layer on the first electrode layer; after coating the interface modification layer precursor on the surface of the hole transport layer away from the first electrode layer, forming an interface modification layer through processing and annealing; forming a perovskite active layer on the surface of the interface modification layer away from the hole transport layer; forming an electron transport layer on the surface of the perovskite active layer away from the interface modification layer; forming a second electrode layer on the surface of the electron transport layer away from the perovskite active layer; wherein the interface modification layer precursor is a precursor of a two-dimensional metal organic framework material; the metal organic framework material contains phosphate, and the interface modification layer is suitable for forming a C / N doped passivation layer after pyrolysis.

[0010] Optionally, the step of preparing the interface modification layer precursor comprises: uniformly mixing an organic ligand compound and a transition metal salt or a transition metal hydroxide or a transition metal oxide in a first solvent to obtain a first mixture solution; moving the mixture solution to an autoclave, and performing constant temperature treatment at a first treatment temperature for a first treatment time, and then cooling to room temperature at a first cooling rate to obtain a second mixture solution; naturally crystallizing the clear filtrate after filtering the second mixture solution at room temperature to form a first crystal; washing the first crystal with a first cleaning agent to obtain a first compound; dissolving the first compound in a second solvent, adding a dispersing agent, and then performing ultrasonic oscillation treatment for a second treatment time to obtain the interface modification layer precursor.

[0011] Optionally, the organic ligand compound comprises a bipyridine compound and a nitrogen-containing organic ligand compound; the transition metal salt comprises a transition metal carbonate salt, a transition metal chloride salt and a transition metal acetate salt; the transition metal comprises one of chromium, manganese, iron, cobalt, nickel, copper or zinc; the transition metal is manganese, the transition metal salt is manganese acetate, the bipyridine compound is 4,4'-bipyridine, and the nitrogen-containing organic ligand compound is N,N-bis(phosphonomethyl)glycine.

[0012] Optionally, the number of moles of manganese acetate is 0.5 mmol-2.0 mmol; the number of moles of 4,4'-bipyridine is 0.2 mmol-1.0 mmol; and the number of moles of N,N-bis(phosphonomethyl)glycine is 0.1 mmol-0.5 mmol; and the volume of the first solvent is 10 ml-15 ml.

[0013] Optionally, the first treatment time is 40 h-80 h; the first treatment temperature is 140℃-200℃; the first cooling rate is 5℃ / h-20℃ / h; the volume of the dispersing agent is 0.5 μL-2.0 μL; and the second treatment time is 10 min-30 min.

[0014] Optionally, the first solvent comprises distilled water, an aqueous HF solution, or an aqueous HCl solution; the pH value of the first solvent is 5-7; the second solvent comprises water, ethanol, toluene, chlorobenzene, chloroform, dichloromethane, gamma-butyrolactone (GBL), N,N-dimethylformamide (DMF), dimethyl sulfoxide (DMSO); the first cleaning agent comprises one or more of deionized water, anhydrous ethanol, methanol, or acetone; and the dispersant comprises a Nafion solution.

[0015] The present application has the following beneficial effects:

[0016] The solar cell provided by the present application introduces an interface modification layer between the perovskite active layer and the hole transport layer. The interface modification layer is suitable for passivating the surface defects of the perovskite grain boundary; the material of the interface modification layer is a two-dimensional metal organic framework material; wherein the metal in the metal organic framework material is a transition metal, and the metal organic framework material contains phosphate. In this way, by setting such an interface modification layer, the phosphate group can interact with Pb 2+ , I - and halogen in the perovskite layer, effectively passivating the surface defect states of the perovskite; the two-dimensional material itself can expose more active sites, the transition metal ions in the metal organic framework material can increase the binding energy with halogen in the perovskite, rearrange the electron density, and thus adjust the energy band structure of the perovskite crystal, reduce the interface energy difference between the perovskite active layer and the carrier transport layer, and improve the stability of the perovskite solar cell. In addition, the interface modification layer generally needs to go through an annealing step during the manufacturing process. After the annealing step, the two-dimensional metal organic framework material containing phosphate in the interface modification layer is pyrolyzed, and a C / N doped passivation layer is obtained, which has the characteristics of high specific surface area and high electrical conductivity. Thus, the transmission efficiency of electrons and holes at the interface between the perovskite active layer and the carrier transport layer can be improved, and the carrier transport capacity can be improved.

[0017] The application provides a solar cell manufacturing method. After forming a hole transport layer, before forming a perovskite active layer, a precursor of an interface modification layer is coated on a surface of the hole transport layer opposite to the first electrode layer, and then the interface modification layer is formed through a processing and annealing step. The interface modification layer is suitable for passivating surface defects of a perovskite grain boundary. The precursor of the interface modification layer is a precursor of a two-dimensional metal organic framework material. The metal in the metal organic framework material is a transition metal, and the metal organic framework material contains phosphate. In this way, the interface modification layer is formed between the perovskite active layer and the hole transport layer through the above steps, so that the stability of the perovskite solar cell can be improved. In addition, the interface modification layer generally needs to go through an annealing step in the manufacturing process, so that a C / N doped passivation layer can be obtained, thereby improving the transport efficiency of electrons and holes at the interface between the perovskite active layer and the carrier transport layer, and improving the carrier transport capacity of the perovskite solar cell. BRIEF DESCRIPTION OF DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the specific embodiments of the present application or the prior art, the drawings needed in the specific embodiments or prior art description will be briefly introduced. Obviously, the drawings in the following description are some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without creative labor.

[0019] Figure 1 Structure schematic diagram of a solar cell according to an embodiment of the present application;

[0020] Figure 2 Flowchart of a manufacturing method of a solar cell according to an embodiment of the present application;

[0021] Figure 3 Maximum output power light stability test diagram of a solar cell manufactured by a manufacturing method of a solar cell according to an embodiment of the present application and solar cells manufactured by manufacturing methods of a plurality of comparative examples under simulated sunlight;

[0022] Figure 4 Maximum output power light stability test diagram of a solar cell according to an embodiment of the present application and solar cells of a plurality of comparative examples at a specific temperature and humidity. DETAILED DESCRIPTION

[0023] The present application provides a solar cell and a manufacturing method thereof to improve the photoelectric conversion efficiency and stability of a perovskite solar cell.

[0024] The solar cell provided by the application comprises: a first electrode layer, a hole transport layer, a perovskite active layer, an electron transport layer and a second electrode layer which are arranged in layers; an interface modification layer is further arranged between the hole transport layer and the perovskite active layer; the material of the interface modification layer is a two-dimensional metal organic framework material; wherein the metal organic framework material contains phosphate, and the interface modification layer is adapted to form a C / N doped passivation layer after pyrolysis.

[0025] The application further provides a manufacturing method of a solar cell, comprising the following steps: preparing an interface modification layer precursor; providing a first electrode layer; forming a hole transport layer on the first electrode layer; after coating the interface modification layer precursor on the surface of the hole transport layer away from the first electrode layer, processing and annealing are performed to form an interface modification layer; forming a perovskite active layer on the surface of the interface modification layer away from the hole transport layer; forming an electron transport layer on the surface of the perovskite active layer away from the interface modification layer; and forming a second electrode layer on the surface of the electron transport layer away from the perovskite active layer; wherein the interface modification layer precursor is a precursor of a two-dimensional metal organic framework material; the metal organic framework material contains phosphate, and the interface modification layer is adapted to form a C / N doped passivation layer after pyrolysis.

[0026] The technical solutions of the application will be described clearly and completely below with reference to the drawings. Obviously, the described embodiments are only part of the embodiments of the application, rather than all the embodiments. Based on the embodiments in the application, all other embodiments obtained by those skilled in the art without creative work fall within the protection scope of the application.

[0027] In the description of the application, it should be noted that the terms 'center', 'upper', 'lower', 'left', 'right','vertical', 'horizontal', 'inner', 'outer' and the like indicate the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the application. In addition, the terms 'first','second', 'third' are only for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0028] In the description of the application, it should be noted that, unless otherwise explicitly specified and limited, the terms'mounting', 'connection' and 'connection' should be understood broadly, for example, can be fixedly connected, can be detachably connected, or integrally connected; can be mechanically connected, or electrically connected; can be directly connected, or indirectly connected through an intermediate medium, or can be connected inside two elements. For those skilled in the art, the specific meaning of the above terms in the application can be understood according to the specific circumstances.

[0029] In addition, the technical features involved in the different embodiments of the application described below can be combined with each other as long as they do not conflict with each other.

[0030] Embodiment 1

[0031] Reference Figure 1 The embodiment provides a solar cell 100, which comprises:

[0032] The first electrode layer 110, the hole transport layer 120, the perovskite active layer 140, the electron transport layer 150 and the second electrode layer 160 are arranged in a stack; and the interface modification layer 130 is further arranged between the hole transport layer 120 and the perovskite active layer 140. The material of the interface modification layer 130 is a two-dimensional metal organic framework (MOF) material. The metal organic framework material contains phosphate, and the interface modification layer 130 is suitable for forming a C / N doped passivation layer after pyrolysis.

[0033] The solar cell 100 provided by the embodiment introduces the interface modification layer 130 between the perovskite active layer 140 and the hole transport layer 120, and the material of the interface modification layer 130 is a two-dimensional metal organic framework (MOF) material. The metal organic framework material (MOF) contains phosphate. In this way, by arranging such an interface modification layer, the phosphate can effectively passivate the surface defects of the perovskite; at the same time, the two-dimensional material can expose more active sites; the transition metal ions in the metal organic framework material can combine with the halogen in the perovskite to increase the binding energy and rearrange the electron density, thereby adjusting the energy band structure of the perovskite, reducing the interface energy difference between the perovskite active layer and the carrier transport layer, and improving the stability of the perovskite solar cell.

[0034] Further, the transition metal includes one of chromium, manganese, iron, cobalt, nickel, copper or zinc. The metal organic framework material includes a nitrogen-containing bipyridine ligand structure.

[0035] In the manufacturing process of the interface modification layer, an annealing step is generally required. In the interface modification layer after the annealing step, the two-dimensional metal organic framework material containing phosphate and transition metal includes a nitrogen-containing bipyridine ligand structure, which can be pyrolyzed in the annealing process to obtain a C / N doped passivation layer. The passivation layer has the characteristics of high specific surface area and high electrical conductivity. Therefore, the transmission efficiency of electrons and holes at the interface between the perovskite active layer and the carrier transport layer can be improved, and the carrier transport capacity can be improved.

[0036] In the embodiment, the transition metal is manganese, and the nitrogen-containing bipyridine ligand structure is formed by co-preparation of 4,4'-bipyridine and N,N-bis(phosphine hydroxymethyl) glycine. The metal manganese has a more suitable ionic radius size than other transition metals, causing lattice shrinkage in the perovskite lattice, inhibiting crystal nucleus formation, and thus increasing the grain size. Moreover, compared with other transition metals, manganese has a lone pair of electrons outside the atomic layer but does not have magnetism, which reduces the interface energy difference between manganese and the carrier transport layer and improves the carrier transport capacity.

[0037] Reference Figure 2 The manufacturing method of the solar cell 100 of the embodiment includes the following steps:

[0038] S0: preparing an interface modification layer precursor;

[0039] S1: providing a first electrode layer 110;

[0040] S2: forming a hole transport layer 120 on the first electrode layer;

[0041] S3: after coating the interface modification layer precursor on the surface of the side of the hole transport layer 120 away from the first electrode layer 110, processing and annealing steps are performed to form an interface modification layer 130;

[0042] S4: forming a perovskite active layer 140 on the surface of the side of the interface modification layer 130 away from the hole transport layer 120;

[0043] S5: forming an electron transport layer 150 on the surface of the side of the perovskite active layer 140 away from the interface modification layer 130;

[0044] S6: forming a second electrode layer 160 on the surface of the side of the electron transport layer 150 away from the perovskite active layer 140.

[0045] Among them, in addition to step S3, steps S2 and S4 also undergo annealing steps in the process of forming the functional layer of the present step.

[0046] Further, the step of preparing the interface modification layer precursor includes:

[0047] The organic ligand compound and the transition metal salt or the transition metal hydroxide or the transition metal oxide are uniformly mixed in the first solvent to obtain a first mixture solution; the mixture solution is moved to an autoclave, and constant temperature treatment is performed at a first treatment temperature for a first treatment time, and then cooled to room temperature at a first cooling rate to obtain a second mixture solution; the clear filtrate after filtering the second mixture solution is naturally crystallized at room temperature to form a first crystal; the first crystal is washed with a first cleaning agent to obtain a first compound; the first compound is dissolved in a second solvent, a dispersing agent is added, and ultrasonic oscillation treatment is performed for a second treatment time to obtain the interface modification layer precursor.

[0048] In the embodiment, the organic ligand compound includes a bipyridine compound and a nitrogen-containing organic ligand compound; the transition metal salt includes a transition metal carbonate, a transition metal chloride, and a transition metal acetate; the transition metal includes one of chromium, manganese, iron, cobalt, nickel, copper, or zinc. The first solvent includes distilled water, an HF aqueous solution, or an HCl aqueous solution; the pH value of the first solvent is 5-7 (weakly acidic); the second solvent includes water, ethanol, toluene, chlorobenzene, chloroform, dichloromethane, gamma-butyrolactone (GBL), N,N-dimethylformamide (DMF), dimethyl sulfoxide (DMSO); the first cleaning agent includes one or more of deionized water, anhydrous ethanol, methanol, or acetone; and the dispersant includes a Nafion solution (a perfluorosulfonic acid type polymer solution).

[0049] Specifically, in the embodiment, the transition metal is manganese, the transition metal salt is manganese acetate, the bipyridine compound is 4,4'-bipyridine, the nitrogen-containing organic ligand compound is N,N-bis(phosphonomethyl)glycine, the first solvent is distilled water, the second solvent is water, and the first cleaning agent is deionized water and anhydrous ethanol.

[0050] The number of moles of manganese acetate is 0.5 mmol-2.0 mmol; the number of moles of 4,4'-bipyridine is 0.2 mmol-1.0 mmol; the number of moles of N,N-bis(phosphonomethyl)glycine is 0.1 mmol-0.5 mmol; and the volume of distilled water is 10 ml-15 ml.

[0051] Further, the first treatment time is 40 h-80 h; the first treatment temperature is 140°C-200°C; the first cooling rate is 5°C / h-20°C / h; the volume of perfluorosulfonic acid is 0.5 μL-2.0 μL; and the second treatment time is 10 min-30 min.

[0052] The solar cell provided in the embodiment can be manufactured by the above-mentioned manufacturing method of a solar cell. By introducing the interface modification layer between the perovskite active layer 140 and the hole transport layer 120, the stability and the carrier transport capacity of the perovskite solar cell can be improved.

[0053] Embodiments 2-6

[0054] Embodiments 2-6 respectively provide a solar cell and a manufacturing method thereof, wherein the structure of the solar cell is the same as that in Embodiment 1. In the manufacturing method of the solar cell, the parameters adopted in the annealing process in steps S2, S3, and S4 are different, as shown in Table 1:

[0055] The remaining steps, parameters, and the selection of materials are the same as those in Embodiment 1, and are not described herein.

[0056] Table 1 Comparison of annealing process parameters of step S2, step S3, step S4

[0057]

[0058] Comparative Example 1

[0059] A solar cell and a manufacturing method thereof are provided, which retains steps S0, S1, S2, S4, S5, S6 on the basis of the above-mentioned embodiment 1, removes step S3, and produces a perovskite solar cell without the interface modification layer in the above-mentioned embodiment 1.

[0060] Comparative Example 2

[0061] A solar cell and a manufacturing method thereof are provided, which, on the basis of the above-mentioned embodiment 1, step S0 includes:

[0062] The organic ligand compound and the transition metal salt are mixed uniformly in distilled water to obtain a first mixture solution; the mixture solution is moved to an autoclave, and is subjected to constant temperature treatment at a first treatment temperature for a first treatment time, and then is cooled to room temperature at a first cooling rate to obtain a second mixture solution; the clear filtrate after filtering the second mixture solution is naturally crystallized at room temperature to form a first crystal; the first crystal is washed with deionized water and anhydrous ethanol to obtain a first compound.

[0063] The first compound is calcined at 800℃ at a temperature rising rate of 5-15℃ / min in a tube furnace under a nitrogen medium for 2-5 hours, the obtained sample is dissolved in a second solvent, ultrasonic oscillation is performed for 2-10 minutes, and then ultrasonic oscillation is performed for 3-5 minutes to obtain a pre-pyrolyzed two-dimensional C / N doped transition metal amorphous material precursor containing phosphate.

[0064] The transition metal is manganese, the transition metal salt is manganese acetate, the bipyridine compound is 4,4'-bipyridine, the nitrogen-containing organic ligand compound is N,N-bis(phosphonomethyl)glycine, and the second solvent is water (all the same as in embodiment 1).

[0065] The remaining steps and parameters and the selection of materials are all the same as in the above-mentioned embodiment 1, and are not described here.

[0066] Comparative Example 3

[0067] A solar cell and a manufacturing method thereof are provided, which, on the basis of the above-mentioned embodiment 1, removes the annealing step in step S3, and produces an interface modification layer in which the organic metal framework material does not undergo pyrolysis. The remaining steps and parameters and the selection of materials are all the same as in the above-mentioned embodiment 1, and are not described here.

[0068] The perovskite solar cells prepared in Examples 1-6 and Comparative Examples 1-3 were encapsulated, and the encapsulation procedure was as follows:

[0069] The solar cells, encapsulation adhesive films and back sheets or back sheet glasses provided in the above examples and comparative examples were laminated;

[0070] The solar cell encapsulation structure was prepared by vacuum pressing at the first lamination temperature, the first lamination pressure and for the first lamination time.

[0071] The first lamination temperature was 110-135°C; the first lamination pressure was 50-100 kPa; and the first lamination time was 10-15 min.

[0072] The solar cell encapsulation structure prepared included:

[0073] a solar cell;

[0074] an encapsulation adhesive film on the surface of the second electrode layer facing away from the electron transport layer;

[0075] a back sheet or back sheet glass on the surface of the encapsulation adhesive film facing away from the second electrode layer; the back sheet glass had a butyl adhesive layer on the edge thereof.

[0076] If the first electrode layer was a transparent electrode, the back sheet was used; if the first electrode layer was an opaque electrode, the back sheet glass was used. The encapsulation adhesive film was an EVA or POE or EPE adhesive film; the butyl adhesive layer had a thickness of 1.5 mm and a width of 7-15 mm.

[0077] The current-voltage test was performed on the solar cell encapsulation structures prepared in the above examples and comparative examples under standard sunlight, and the short-circuit current density (Jsc), open-circuit voltage (Voc), fill factor (FF) and photoelectric conversion efficiency (PCE) were obtained, and the results are shown in Table 2.

[0078] Table 2: Comparison of various parameters of the solar cell encapsulation structures prepared in the above examples and comparative examples under standard sunlight

[0079]

[0080] In addition, in combination with Table 2, reference was made to Figure 3 and Figure 4The perovskite solar cell with the interface modification layer of the phosphorus-containing two-dimensional metal organic framework material of Example 1 has both improved efficiency and stability relative to the cell without the interface modification layer (Example 1 vs. Comparative Example 1); the perovskite cell with the C / N-doped structure formed by pyrolysis of the interface modification layer on the hole transport layer has both improved efficiency and stability relative to the perovskite cell without the C / N-doped interface modification layer (Example 1 vs. Comparative Example 3); the perovskite cell with the C / N-doped structure formed by pyrolysis of the interface modification layer on the hole transport layer has both improved efficiency and stability relative to the perovskite cell with the pre-pyrolyzed amorphous modification layer applied on the cell (Example 1 vs. Comparative Example 2).

[0081] The application has been illustrated by the above examples, and it is believed that those skilled in the art can understand the application through the above examples. Obviously, the above examples are only examples for clearly illustrating, and are not limitation to the embodiments. Other different forms of changes or variations can be made by those skilled in the art on the basis of the above description. All the embodiments do not need to be exhausted here, and the obvious changes or variations derived therefrom are still within the protection scope of the application.

Claims

1. A solar cell, characterized by, The solar cell comprises: a first electrode layer, a hole transport layer, a perovskite active layer, an electron transport layer and a second electrode layer which are stacked; a C / N-doped passivation layer is arranged between the hole transport layer and the perovskite active layer, and the C / N-doped passivation layer is formed by pyrolysis of an interface modification layer; wherein the material of the interface modification layer is a two-dimensional metal organic framework material; the metal in the metal organic framework material is a transition metal, and the metal organic framework material contains phosphate; and the interface modification layer is adapted to form a C / N-doped passivation layer after pyrolysis. The interface modification layer is formed by an interface modification layer precursor; and the preparation raw material of the interface modification layer precursor contains an organic ligand compound; and the organic ligand compound includes a bipyridine compound and a nitrogen-containing organic ligand compound.

2. The solar cell of claim 1, wherein the transition metal comprises one of chromium, manganese, iron, cobalt, nickel, copper or zinc.

3. The solar cell of claim 2, wherein the transition metal is manganese.

4. The solar cell of claim 1, wherein the metal organic framework material comprises a nitrogen-containing bipyridine ligand structure.

5. A method for manufacturing a solar cell, characterized by, The method comprises the following steps: preparing an interface modification layer precursor; providing a first electrode layer; forming a hole transport layer on the first electrode layer; forming an interface modification layer after coating the interface modification layer precursor on the surface of the hole transport layer away from the first electrode layer, and forming a C / N-doped passivation layer after an annealing step; forming a perovskite active layer on the surface of the interface modification layer away from the hole transport layer; forming an electron transport layer on the surface of the perovskite active layer away from the interface modification layer; forming a second electrode layer on the surface of the electron transport layer away from the perovskite active layer; wherein the interface modification layer precursor is a precursor of a two-dimensional metal organic framework material; the metal in the metal organic framework material is a transition metal, and the metal organic framework material contains phosphate; the preparation raw material of the interface modification layer precursor contains an organic ligand compound; and the organic ligand compound includes a bipyridine compound and a nitrogen-containing organic ligand compound.

6. The method for manufacturing the solar cell of claim 5, wherein the step of preparing the interface modification layer precursor comprises: adding an organic ligand compound and a transition metal salt or a transition metal hydroxide or a transition metal oxide into a first solvent to mix uniformly to obtain a first mixture solution; moving the mixture solution to an autoclave, and performing constant temperature treatment at a first treatment temperature for a first treatment time, and then cooling to room temperature at a first cooling rate to obtain a second mixture solution; crystallizing the clear filtrate after filtering the second mixture solution at room temperature to form a first crystal; washing the first crystal with a first cleaning agent to obtain a first compound; dissolving the first compound in a second solvent, adding a dispersing agent, and performing ultrasonic oscillation treatment for a second treatment time to obtain the interface modification layer precursor.

7. The method for manufacturing the solar cell of claim 6, wherein The transition metal salt includes a transition metal carbonate, a transition metal chloride, and a transition metal acetate; The transition metal includes one of chromium, manganese, iron, cobalt, nickel, copper, or zinc; The transition metal is manganese, the transition metal salt is manganese acetate, the bipyridyl compound is 4,4'-bipyridine, and the nitrogen-containing organic ligand compound is N,N-bis(phosphonomethyl)glycine. 8.The method of claim 7, wherein The molar amount of the manganese acetate is 0.5 mmol-2.0 mmol; the molar amount of the 4,4'-bipyridine is 0.2 mmol-1.0 mmol; the molar amount of the N,N-bis(phosphonomethyl)glycine is 0.1 mmol-0.5 mmol; and the volume of the first solvent is 10 ml-15 ml. 9.The method of claim 7, wherein The first treatment time is 40 h-80 h; The first treatment temperature is 140 ℃-200 ℃; The first cooling rate is 5 ℃ / h-20 ℃ / h; The volume of the dispersant is 0.5 μL-2.0 μL; The second treatment time is 10 min-30 min. 10.The method of claim 7, wherein The first solvent includes distilled water, an aqueous HF solution, or an aqueous HCl solution; and the pH of the first solvent is 5-7; The second solvent includes water, ethanol, toluene, chlorobenzene, chloroform, dichloromethane, γ-hydroxybutyric acid lactone, N,N-dimethylformamide, dimethyl sulfoxide; The first cleaning agent includes one or more of deionized water, anhydrous ethanol, methanol, or acetone; The dispersant includes a Nafion solution.

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