Processing equipment

Abstract

The processing device comprises: a differential exhaust device, wherein a plurality of annular grooves are formed on a surface of a head portion facing the processed substrate, the plurality of annular grooves surround the center of the head portion, an opening portion is provided in a region inner than the innermost annular groove among the plurality of annular grooves, the opening portion forms a processing space capable of processing the processed surface, a vacuum pump is connected to at least one of the plurality of annular grooves, and in a state where the opposing surface is facing the processed surface, the processing space is set to a high vacuum degree by the suction action of the annular groove; and a focused ion beam columnar body, which comprises a lens barrel connected to the opening portion and capable of communicating with the processing space, a focused ion beam optical system is built in the lens barrel so that the focused ion beam is emitted through the opening portion, a raw material gas supply portion is connected to the innermost annular groove, raw material gas is ejected from the annular groove toward the processed surface so that the raw material gas can move along the processed surface toward the processing space.

Description

Technical Field

[0001] The present invention relates to a processing device provided with a differential exhaust device. Background Art

[0002] As a processing device, the following device is known: by scanning a focused ion beam from a focused ion beam column on the sample surface, detecting secondary particles (secondary electrons, secondary ions, etc.) emitted from the sample collided with by the generated focused ion beam, thereby being able to observe a microscope image and perform film forming processing on the sample surface. Specifically, the focused ion beam device has functions such as sample observation, etching (sputtering), and CVD (chemical vapor deposition).

[0003] In such a processing device, a focused ion beam is irradiated onto necessary parts of the surface of the substrate to be corrected based on information from the above-mentioned microscope image, and CVD gas is supplied from a supply nozzle separately arranged on the outside of the focused ion beam column, thereby enabling local film formation for processing and correction.

[0004] In recent years, a processing device has been disclosed that is equipped with a local exhaust device that forms a vacuum space locally on the surface of a substrate to be corrected, without requiring a large vacuum chamber (see, for example, Patent Document 1). This processing device has a raw material gas flow path formed at the front end opening (lower end) of the column in the focused ion beam column to directly supply the raw material gas (see Patent Document 1). Figure 4 ).

[0005] Prior Art Literature

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent No. 5114960 Summary of the invention

[0008] Problems to be solved by the present invention

[0009] However, in the above-mentioned existing processing device, there is the following problem: even if the raw material gas is directly supplied to the front end of the lens barrel of the focused ion beam column, it is difficult for the raw material gas to reach the processed surface of the repaired substrate surface, making it difficult to stably form a CVD film on the repaired substrate surface.

[0010] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a processing apparatus capable of reliably performing a film forming process on a substrate to be processed.

[0011] Solutions to Solve Problems

[0012] In order to solve the above-mentioned problems and achieve the purpose, the processing device of the scheme of the present invention comprises: a differential exhaust device, which comprises a head, and the head is opposite to any area of ​​the processed surface relative to the processed surface of the processed substrate, and a plurality of annular grooves are formed on the opposing surface of the head that is opposite to the processed surface, and the plurality of annular grooves surround the center of the head, and an opening is provided in the area of ​​the head that is closer to the innermost annular groove among the plurality of annular grooves, and the opening forms a processing space capable of processing the processed surface, and at least one of the plurality of annular grooves is connected to a vacuum pump, and when the opposing surface is aligned with the annular groove, a vacuum pump is provided. When the processed surface is opposite, the processing space is set to a high vacuum degree by the suction effect from the annular groove; and a focused ion beam column is arranged on the side of the head opposite to the opposing surface, and has a barrel connected to the opening and capable of communicating with the processing space, and a focused ion beam optical system is built into the barrel to allow the focused ion beam to pass through the opening to be emitted. The processing device is characterized in that a raw material gas supply part is connected to the innermost annular groove, and raw material gas is ejected from the annular groove toward the processed surface so that the raw material gas can move along the processed surface to the processing space.

[0013] As the above scheme, the head preferably includes a head body and a groove forming plate, the groove forming plate is installed on the surface of the head body on the side opposite to the processed substrate, and the surface of the groove forming plate opposite to the processed substrate is the opposing surface.

[0014] As the above-mentioned scheme, it is preferred to arrange the groove forming plate in an island shape within the contour of the surface of the head body on the side opposite to the processed substrate, and set the step portion formed by the surface of the head body on the side opposite to the processed substrate and the outer peripheral portion of the groove forming plate to a conical shape.

[0015] As the above-mentioned scheme, it is preferred to arrange the groove forming plate in an island shape within the contour of the surface of the head body on the side opposite to the processed substrate, and set the shoulder of the step portion formed by the surface of the head body on the side opposite to the processed substrate and the outer periphery of the groove forming plate as a chamfered corner portion.

[0016] As the above aspect, it is preferable that the groove forming plate is composed of a plurality of annular plates, and the plurality of annular plates are arranged to surround the center of the head.

[0017] As the above scheme, it is preferred that a microchannel plate is arranged in the front end portion of the lens barrel, an ion beam passage port for the focused ion beam to pass through is formed on the microchannel plate, and the periphery of the ion beam passage port of the microchannel plate is used as a detection portion capable of capturing secondary charged particles generated from the processed substrate.

[0018] As the above aspect, it is preferable that the processing apparatus includes an optical microscope for detecting the alignment mark formed on the substrate to be processed.

[0019] As the above aspect, it is preferable that the processing device includes an observation microscope at an offset distance near the head portion, and the observation microscope is used to observe a processed region of the processed substrate.

[0020] As the above scheme, it is preferred that the processing device has a plurality of the focused ion beam columns, the focused ion beam columns have the differential exhaust device at the front end, and each of the focused ion beam columns is arranged in a manner opposite to the regions that divide the processed surface of the processed substrate into multiple regions.

[0021] As the above aspect, it is preferable that the position of the substrate to be processed is fixed, and the focused ion beam column having the differential exhaust device provided at the front end thereof is movable in the XY direction relative to the substrate to be processed.

[0022] Effects of the Invention

[0023] According to the present invention, it is possible to realize a processing apparatus capable of reliably performing a film forming process on a substrate to be processed. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a cross-sectional explanatory diagram of a processing device according to a first embodiment of the present invention.

[0025] Figure 2 This is a perspective view of the differential exhaust device constituting the processing device according to the first embodiment of the present invention, as seen from obliquely below.

[0026] Figure 3 This is a perspective view of a groove forming plate constituting the processing device according to the first embodiment of the present invention, as seen from obliquely below.

[0027] Figure 4 This is a perspective view of a groove forming plate constituting the processing device according to the first embodiment of the present invention, as seen from obliquely above.

[0028] Figure 5 It is a cross-sectional explanatory diagram of a processing device according to Modification 1 of the first embodiment of the present invention.

[0029] Figure 6 It is a cross-sectional explanatory diagram of a processing device according to Modification 2 of the first embodiment of the present invention.

[0030] Figure 7 This is a partially cutaway perspective view of a processing device according to a third modification of the first embodiment of the present invention as viewed obliquely from below.

[0031] Figure 8 It is a cross-sectional view of the main part of the processing device according to the second embodiment of the present invention.

[0032] Fig. 9 It is an explanatory diagram schematically showing a processing device according to Modification 1 of the second embodiment of the present invention.

[0033] Fig.10 It is a cross-sectional view of the main parts of a processing device showing a third embodiment of the present invention.

[0034] Fig.11 It is a structural explanatory diagram showing a processing device according to a fourth embodiment of the present invention.

[0035] Fig.12 It is a structural explanatory diagram showing a processing device according to a fifth embodiment of the present invention.

[0036] Fig.13 It is a structural explanatory diagram showing a processing device according to a sixth embodiment of the present invention.

[0037] Fig.14 It is a structural explanatory diagram showing a processing device according to a seventh embodiment of the present invention. DETAILED DESCRIPTION

[0038] The following is a detailed description of the processing device according to the embodiment of the present invention with reference to the accompanying drawings. It should be noted that the accompanying drawings are schematic, and the dimensions, ratios, numbers, shapes, etc. of the components are different from the actual ones. In addition, the drawings also include parts with different dimensional relationships, ratios, and shapes.

[0039] [First embodiment]

[0040] (Brief Structure of Processing Equipment)

[0041] Figure 1 The schematic structure of the processing device 1 of the first embodiment is shown. The processing device 1 includes a differential exhaust device 2, a focused ion beam column (hereinafter, also referred to as a FIB column) 3, a substrate support 4 and a support frame 5. The substrate support 4 can support a photomask 6 as a processed substrate in a mounted state. The substrate support 4 is a workbench that can move in the X-Y direction.

[0042] (Structure of differential exhaust device)

[0043] Below, use Figure 2 to Figure 4 The structure of the differential exhaust device 2 is described below. It should be noted that: Figure 2 1 is a perspective view of the differential exhaust device 2 as viewed from below. The differential exhaust device 2 includes a head 7, and a vacuum pump and a discharge pump (not shown).

[0044] The head 7 is composed of two disk-shaped metal plates having an area extremely smaller than that of the processed surface 6A of the photomask 6. The head 7 can face any region of the processed surface 6A by the substrate support 4 moving in the XY direction.

[0045] like Figure 1 and Figure 2 As shown, the head 7 includes a head body 8 and a groove forming plate 9 mounted on a surface 8A on the side opposite to the photomask 6 in the head body 8. The groove forming plate 9 is arranged in an island shape within the contour of the surface 8A on the side opposite to the photomask 6 in the head body 8. It should be noted that in this embodiment, the groove forming plate 9 is screwed to the head body 8, but the fixing mechanism is not limited to this. The groove forming plate 9 has an opposing surface 9A directly opposite to the photomask 6.

[0046] like Figure 2 As shown, four annular grooves 10A, 10B, 10C, and 10D are formed on the opposing surface (lower surface) 9A in a manner surrounding the center of the head 7. An opening 11 is formed in the inner area of ​​the innermost annular groove 10A among the multiple annular grooves 10A, 10B, 10C, and 10D of the head 7. A processing space Sp is formed in the opening 11. The processed surface 6A of the photomask 6 can be processed in the opening 11 (film forming processing based on focused ion beam irradiation, etc.). An opening 8B connected to the opening 11 is formed in the center of the head body 8. It should be noted that in this description, the groove formed in a manner surrounding the center of the head 7 is referred to as an "annular groove", which is a definition that includes circular annular grooves, square annular grooves, and also includes a C-shaped groove in which a part of the ring is missing, a plurality of grooves arranged intermittently in an annular shape, etc.

[0047] like Figure 1 As shown, the lens barrel 14 of the FIB column 3 described later is connected to the opening 8B in a communicating manner. In addition, communication paths are formed in the head body 8, which are connected to the annular grooves 10A, 10B, 10C, and 10D formed on the groove forming plate 9, and connecting pipes 12A, 12B, 12C, and 12D are connected to these communication paths. Figure 3 and Figure 4 As shown, in this embodiment, a plurality of communication holes 13A, 13B, 13C, and 13D are formed at the bottom of the groove of the groove forming plate 9 so as to penetrate the groove forming plate 9. The annular grooves 10A, 10B, 10C, and 10D are connected to the communication path in the head body 8 through these plurality of communication holes 13A, 13B, 13C, and 13D.

[0048] At least one (three in this embodiment) of the plurality of annular grooves 10A, 10B, 10C, 10D is connected to the connecting pipes 12B, 12C, 12D via a communication path formed in the head body 8. These connecting pipes 12B, 12C, 12D are connected to a vacuum pump (not shown).

[0049] The innermost annular groove 10A is connected to a raw material gas supply unit (not shown) for supplying deposition gas (raw material gas, CVD gas) through a connecting pipe 12A. The head 7 has the following functions: when the opposing surface 9A is opposed to the processed surface 6A, the processing space Sp is made into a high vacuum degree by using the air suction effect from the annular grooves 10B, 10C, and 10D. In addition, the head 7 reliably supplies the raw material gas from the innermost annular groove 10A to the processing space Sp adjusted to a high vacuum degree, thereby enabling CVD film formation to be performed on the area of ​​the processed surface 6A opposed to the opening 11.

[0050] By the way, in the existing processing device, the blowing port of the raw gas flow path in the local exhaust device is formed adjacent to the front end opening of the lens barrel, so there is a problem that CVD products are easily accumulated on the wall near the blowing port. Since the location where the CVD products are accumulated is the front end of the lens barrel, it may affect the focused ion beam. Therefore, in the existing processing device, it is necessary to maintain the local exhaust device. In this case, it is necessary to regularly remove the local exhaust device from the focused ion beam column to clean the accumulated CVD products. The local exhaust device is connected to the pipe of the exhaust system, the pipe of the raw gas supply system, etc., so there is a problem that the removal process, the cleaning process, and the installation process take a long time.

[0051] In existing processing equipment, since the gap between the local exhaust device and the substrate to be repaired is set to a distance as narrow as 40 μm, there is a possibility that the lower surface of the local exhaust device will contact the substrate to be repaired and need to be replaced. Such replacement also has the problem of taking a long time and a large amount of management cost.

[0052] (Focused ion beam column: FIB column)

[0053] The FIB columnar body 3 is disposed on the surface side (upper surface side) opposite to the facing surface 9A of the head 7 , and the front end opening of the FIB columnar body 3 is connected to the openings 8B and 11 of the head 7 in a communicating manner.

[0054] The FIB column 3 includes a column 14 communicating with the processing space Sp and a focused ion beam optical system 15 built in the column 14. A focused ion beam Ib can be emitted from the front end of the FIB column 3 through the opening 11. Such a FIB column 3 is supported by the support frame 5 in a suspended state.

[0055] The focused ion beam optical system 15 includes an ion source for generating an ion beam Ib, a focusing lens for focusing the generated ion beam Ib, a deflector for scanning the ion beam Ib, and an electrostatic lens for focusing the ion beam Ib. As the ion source, a gallium (Ga) ion source is mainly used, but a rare gas ion source can also be used by inductively coupling plasma (ICP) or gas electric field ionization of a rare gas such as argon (Ar). As the lens of the ion beam Ib, an electric field lens is preferably used.

[0056] As a deposition gas for CVD, W(CO) 6 can be used. When W(CO) 6 near a substrate is irradiated with a focused ion beam, it is decomposed into W and CO, and W is deposited on the substrate.

[0057] (Operation and Effect of Processing Device of First Embodiment)

[0058] When processing is performed using the processing apparatus 1 of the present embodiment, the processing target surface 6A of the photomask 6 is set to be arranged in parallel with the facing surface 9A of the head 7 with a predetermined gap therebetween.

[0059] Next, a vacuum pump (not shown) is operated to suction from the three annular grooves 10B, 10C, and 10D via the connecting pipes 12B, 12C, and 12D. The processing space Sp formed by the inner opening 11 of the innermost annular groove 10A is made into a high vacuum by the suction from the annular grooves 10B, 10C, and 10D.

[0060] In this way, when the processing space Sp is in a high vacuum state, the raw material gas (CVD gas) is supplied to the innermost annular groove 10A from the raw material gas supply portion (not shown) through the connecting pipe 12A. Since the annular groove 10A is located near the processing space Sp, the raw material gas reliably reaches the processing space Sp. At this time, the raw material gas moves to the processing space Sp along the processed surface 6A of the photomask 6. That is, the raw material gas is stably present in the area where film formation is performed.

[0061] In this state, when the ion beam Ib is irradiated from the FIB columnar body 3 toward the processing space Sp, CVD film formation can be performed on the region of the processing surface 6A facing the opening 11 .

[0062] (Effects of the Processing Device of the First Embodiment)

[0063] In the processing apparatus 1 of the present embodiment, since the differential exhaust device 2 can locally provide a high vacuum degree, it is not necessary to place the entire processing surface 6A of the photomask 6 in a vacuum.

[0064] In the present embodiment, a raw material gas supply unit is connected to the innermost annular groove 10A in the differential exhaust device 2. The raw material gas is ejected from the annular groove 10A toward the processed surface 6A of the photomask 6, so that the raw material gas reaches the processing space Sp from the opening 11 via the processed surface 6A. Therefore, the raw material gas can reliably reach the processed surface 6A facing the processing space Sp, and a high-quality CVD film can be stably formed under the action of the focused ion beam Ib.

[0065] In addition, in this embodiment, the groove forming plate 9 can be easily removed from the head body 8 and replaced, so there is no need to remove the FIB column 3, connecting pipes 12A, 12B, 12C, 12D, etc., which has the effect of facilitating maintenance.

[0066] (Variation 1 of the First Embodiment)

[0067] Figure 5 The processing device 1A shown is a modification 1 of the processing device 1 of the first embodiment described above. In this processing device 1A, the outer peripheral surface of the groove forming plate 9 of the head 7, that is, the outer peripheral surface (wall surface) of the step portion formed by the surface 8A of the head body 8 and the outer peripheral portion of the groove forming plate 9 is formed into a tapered surface 9B. The other structures of the processing device 1A of this modification 1 are substantially the same as those of the processing device 1 of the first embodiment described above, and have the same functions and effects.

[0068] When the gap between the facing surface 9A of the differential exhaust device 2 and the processed surface 6A of the photomask 6 is a narrow gap of about 40 μm, if turbulence occurs in the narrow gap area, it will become a major cause of vibration generation, etc. According to this modification example 1, the outer peripheral surface of the groove forming plate 9 is formed into a tapered surface 9B to ease the steep step, thereby making it difficult to generate turbulence, and the generation of vibration, etc. can be suppressed.

[0069] (Variation 2 of the first embodiment)

[0070] Figure 6 A processing device 1B of a second modification of the first embodiment described above is shown. In this processing device 1B, the step at the outer peripheral portion of the groove forming plate 9 of the head 7 is rounded to form a chamfered portion 9C. The other structures of the processing device 1B of this second modification are substantially the same as those of the processing device 1 of the first embodiment described above.

[0071] According to this modification 2, by forming the step shoulder of the groove forming plate 9 into a chamfered corner 9C, it is possible to prevent turbulence from occurring between the opposing surface 9A and the processed surface 6A, as in the above-mentioned modification 1, and to suppress the vibration of the device, etc. In this modification 2, the same action and effect as the processing device 1 of the above-mentioned first embodiment are also achieved.

[0072] (Variation 3 of the first embodiment)

[0073] Figure 7 1 is a partially cutaway perspective view of a processing device 1C showing a third modification of the first embodiment. In the third modification, the groove forming plate 9 is formed by arranging five annular plates 9D, 9E, 9F, 9G, and 9H in a concentric circle shape. Annular grooves 10A, 10B, 10C, and 10D are formed between mutually adjacent annular plates among the annular plates 9D, 9E, 9F, 9G, and 9H. The other structures of the processing device 1C of the third modification are substantially the same as those of the first embodiment described above.

[0074] According to this modification 3, the differential exhaust function can be adjusted by slightly changing the thickness of each of the annular plates 9D, 9E, 9F, 9G, and 9H constituting the groove forming plate 9. In addition, since only the damaged portion of the annular plates 9D, 9E, 9F, 9G, and 9H needs to be replaced, the maintenance cost can be suppressed. Therefore, the operation of removing and replacing can be easily performed.

[0075] (Second Embodiment)

[0076] Figure 8 1 is a cross-sectional view of the main parts of the processing device 1D according to the second embodiment. In this embodiment, nitrogen (N2) as an inert gas can be sprayed from the outermost annular groove 10D in the head 7 toward the processed surface 6A to generate a gas curtain. In this way, by using an inert gas, the inside of the lens barrel 14 can be purged using the inert gas, thereby improving the environment. In addition, the spraying of the inert gas has the effect of offsetting the vacuum pressure generated by the differential exhaust. It should be noted that in this embodiment, the head 7 is composed of a single metal plate.

[0077] (Variation 1 of the Second Embodiment)

[0078] Fig. 9 1 is a cross-sectional view of a processing device 1E according to a first modification of the second embodiment of the present invention. Fig. 9As shown, the processing device 1E is provided with a floating pad 16 in a circumferential manner along the outer peripheral edge of the facing surface 9A of the head 7 of the differential exhaust device 2. The floating pad 16 is connected to a not-shown ejection pump that supplies nitrogen (N2) as an inert gas via a connecting pipe 12E. The floating pad 16 is formed in a flat annular tube shape, and a plurality of slit-shaped or circular openings 16A are formed on the lower surface, and the inert gas can be ejected from the openings. The other structures of the processing device 1E of this embodiment are substantially the same as those of the processing device 1D of the second embodiment described above.

[0079] The floating pad 16 sprays the inert gas toward the processed surface 6A to form a gas curtain. Therefore, the floating pad 16 applies force to the head 7 in the direction away from the processed surface 6A. In this way, by using the inert gas, the inside of the lens barrel 14 can be purged by the inert gas, thereby improving the environment. In addition, the spraying of the inert gas has the effect of offsetting the vacuum pressure generated by the differential exhaust.

[0080] [Third Embodiment]

[0081] Fig.10 1 is an explanatory diagram schematically showing a processing device 1F according to a third embodiment of the present invention. The processing device 1F includes an object electrostatic lens 15A and a microchannel plate 17 of a focused ion beam optical system 15 in the front end portion of a lens barrel 14. The microchannel plate 17 is arranged at a position closer to the downstream side of the ion beam than the object electrostatic lens 15A (closer to the front end of the lens barrel 14). Fig.10 As shown, the microchannel plate 17 has an ion beam passage opening 17A opened in the center, and the peripheral portion thereof is provided as a detection portion 17B capable of capturing secondary charged particles P generated from the photomask 6 .

[0082] It should be noted that, when the processing device 1F is used to observe the processed surface 6A of the photomask, the focused ion beam Ib is irradiated in a state where the supply of the deposition gas (raw material gas) is stopped. In addition, the focused ion beam Ib is incident on the processed surface 6A through the ion beam port 17A. As a result, the secondary charged particles P generated from the processed surface 6A are incident on the detection unit 17B to generate electrons. In this way, the generated electrons are amplified by the avalanche current to obtain information on the surface of the processed surface 6A. Therefore, according to the processing device 1F of this embodiment, the state of the processed surface 6A can be detected with high sensitivity.

[0083] According to the processing device 1F of this embodiment, the working distance (WD) of the object electrostatic lens 15A can be shortened, and the capture efficiency of the secondary charged particles P can be improved compared with the existing method of configuring a scintillator at a position away from the focused ion beam optical system in the vacuum chamber for detection.

[0084] If the working distance of the object electrostatic lens 15A is shortened in this way, it will be difficult to separately configure a structure such as a nozzle for deposition gas (raw gas) near the front end of the lens barrel 14. However, in the present embodiment, deposition gas is ejected from the annular groove 10A to the processed surface 6A near the opening 11. Therefore, deposition gas can be introduced into the processing space Sp via the processed surface 6A. Therefore, in the present embodiment, the problem of difficulty in supplying deposition gas due to the shortened working distance will not occur. In the present embodiment, the raw gas can reliably reach the processed surface 6A facing the processing space Sp to perform high-quality and stable CVD film formation.

[0085] According to this embodiment, as a result, the working distance of the object electrostatic lens 15A can be shortened, so the focusing efficiency of the focused ion beam optical system 15 is also improved, and a fine focused ion beam Ib can be irradiated.

[0086] In addition, in this embodiment, the position of the photomask 6 for observing the state of the processed surface 6A by the focused ion beam 1b is the same as the position of the photomask 6 when the CVD film is formed, so there is no need to move the photomask 6. Therefore, the problem of deviation of the processing position due to the movement of the photomask 6 can be avoided.

[0087] [Fourth Embodiment]

[0088] Fig.11 A processing device 1G according to a fourth embodiment of the present invention is shown. The processing device 1G includes an X-Y precision table 25. The X-Y precision table 25 is provided with support legs 26 at the bottom of at least four corners. A substrate support table 4 is provided on the X-Y precision table 25 and is moved in the X-Y direction by the X-Y precision table 25. A photomask 6 is placed on the substrate support table 4.

[0089] like Fig.11 As shown, a support frame 20 is mounted on the X-Y precision worktable 25. A FIB column 3 is suspended in the center of the support frame 20. A differential exhaust device 2 is integrally provided at the lower end of the FIB column 3. It should be noted that the structure of the FIB column 3 and the differential exhaust device 2 is substantially the same as the structure of the processing device 1 of the first embodiment described above.

[0090] A vacuum pump 27 is connected to the FIB column 3 , and a vacuum pump control power supply 28 is connected to the vacuum pump 27 . In addition, a stage control power supply 29 is connected to the XY precision stage 25 .

[0091] In particular, in the present embodiment, optical alignment microscopes 30 are provided at upper positions corresponding to alignment marks 6B formed on four corners of photomask 6 disposed at predetermined positions on XY precision stage 25 .

[0092] In this embodiment, a local vacuum space is realized by using a differential exhaust device 2, whereby the area outside the area to be processed is at atmospheric pressure, so that the optical calibration microscope can be easily set. In this embodiment, calibration marks 6B at the four corners of the photomask are used for calibration, and the coordinates can be determined according to the relative relationship between the position of the optical calibration microscope 30 and the processing position where the FIB column 3 is processed.

[0093] Therefore, according to the processing apparatus 1G of this embodiment, the stroke of the XY precision table 25 for calibration is unnecessary. In addition, according to the processing apparatus 1G, the movement time for calibration can be shortened.

[0094] [Fifth Embodiment]

[0095] Fig.12 A processing device 1H according to a fifth embodiment of the present invention is shown. The processing device 1H according to this embodiment is configured such that an optical microscope 31 is provided in such a manner as to set an offset distance relative to the FIB column 3. It should be noted that in this embodiment, the optical calibration microscope 30 as in the processing device 1G according to the fourth embodiment described above is not provided, but of course, the optical calibration microscope 30 may be added.

[0096] In the existing processing device, a charged particle detector arranged on the outside of the FIB column is used to detect the secondary electrons and secondary ions emitted from the photomask irradiated with the focused ion beam, and the change in its intensity is observed, so that the surface shape of the processed substrate is observed as an ion image. Usually, the ion image is used to confirm the irradiation position, etc. However, since the secondary charged particles depend on the surface shape (tilt angle) of the processed substrate, only the surface shape is detected as an ion image. Therefore, when there are few fluctuations in the surface shape, it will become an ion image with low contrast, making it difficult to confirm the irradiation position, resulting in reduced position accuracy.

[0097] like Fig.12 As shown, in the processing device 1H of the present embodiment, the differential exhaust device 2 can be used to locally set the vacuum degree to high, so there is no need to place the entire photomask 6 in a vacuum. Therefore, an optical microscope 31 can be set near the FIB column 3. Therefore, it is possible to use a high-resolution optical microscope 31 to obtain not only surface undulation information but also color information from the processed surface 6A of the photomask 6 to be processed by the focused ion beam. Therefore, in the present embodiment, the position to be processed by the focused ion beam can be easily confirmed. It should be noted that in the present embodiment, a laser microscope or the like can be used instead of the optical microscope 31.

[0098] As long as the positional deviation of the ion beam irradiation position relative to the position confirmed by the optical microscope 31 is confirmed in advance, the photomask 6 can be immediately placed at the ion beam irradiation position after the position is confirmed based on the optical image of the position to be processed. In this way, in this embodiment, the irradiation position can be specified even for the surface of the photomask 6 with less undulation, and the focused ion beam irradiation can be performed with high precision.

[0099] [Sixth Embodiment]

[0100] Fig.13 The sixth embodiment of the present invention is shown in the processing device 1I. The processing device 1I includes an X-Y precision table 25, support legs 26 respectively provided at the bottom of at least four corners of the X-Y precision table 25, a substrate support table 4, a support frame 20, four FIB columns 3 suspended from the support frame 20, and a differential exhaust device 2 provided at the lower end of the FIB column 3.

[0101] A vacuum pump 27 is connected to each FIB column 3 , and a vacuum pump control power supply 28 is connected to the vacuum pump 27 . In addition, a stage control power supply 29 is connected to the XY precision stage 25 .

[0102] In particular, in the present embodiment, four FIB columns 3 are arranged in a manner corresponding to the regions into which the photomask is divided into four. When one FIB column 3 is used for one photomask, a stroke four times the area of ​​the substrate needs to be generated for the substrate support table 4. In contrast, in the present embodiment, by providing four FIB columns 3, the X-Y precision worktable 25 can be operated to reduce the movable stroke of the substrate support table 4, and the footprint of the device can be suppressed to a small size.

[0103] [Seventh Embodiment]

[0104] Fig.14 A processing device 1J according to a seventh embodiment of the present invention is shown. The processing device 1J includes a substrate stage 32 to which a substrate support 4 is fixed. The substrate stage 32 is provided with support legs 26 at the bottom of at least four corners.

[0105] like Fig.14 As shown, an X-Y gantry table 33 is mounted on the substrate table 32. A movable block 34 that can move in the X-Y direction is provided on the X-Y gantry table 33. The FIB column 3 and the optical calibration microscope 30 are fixed to the movable block 34. A differential exhaust device 2 is integrally provided at the lower end of the FIB column 3. It should be noted that the structure of the FIB column 3 and the differential exhaust device 2 is substantially the same as the structure of the processing device 1 of the first embodiment described above.

[0106] The FIB column 3 is connected to a vacuum pump 27 . In addition, the movable block 34 is connected to a stage control power supply 35 .

[0107] In particular, in the present embodiment, by setting the movable block 34 on the X-Y gantry table 33 so as to be movable in the X-Y direction, the FIB column 3 and the optical calibration microscope 30 set on the movable block 34 can be moved while the position of the photomask 6 is fixed. In this way, since the position of the photomask 6 can be fixed, the occupied area of ​​the device can be reduced.

[0108] The above describes the various embodiments of the present invention. According to the present invention, the high vacuum of the processing space Sp of the head 7 can be reliably maintained, so the quality of the processing work in the processing space can be improved. In addition, on the facing surface 9A of the head 7, the raw material gas is ejected from the innermost annular groove 10A surrounding the central opening 11, so that the photomask 6 can be reliably film-formed.

[0109] Furthermore, in the present invention, since the groove forming plate 9 is mounted on the head 7, only the groove forming plate 9 needs to be replaced or cleaned, so that maintenance becomes easy and equipment cost and management cost can be reduced.

[0110] [Other embodiments]

[0111] Although the embodiments of the present invention have been described above, it should not be understood that the discussion and drawings constituting part of the disclosure of these embodiments will limit the present invention. Various alternative embodiments, examples, and application technologies can be known to those skilled in the art based on this disclosure.

[0112] In the above-mentioned embodiment, the number of annular grooves formed in the differential exhaust device is not limited to four, as long as at least two annular grooves for exhaust and blowing are provided. In addition, circular annular grooves 10A, 10B, 10C, and 10D are formed as grooves for gas supply and exhaust, but the present invention is not limited thereto, and square annular grooves, for example, may also be formed.

[0113] In the above-described embodiment, the photomask 6 is applied as a substrate to be processed, but it can be applied to various display substrates and the like that require film formation processing in order to observe wiring defects.

[0114] Explanation of symbols

[0115] Ib Focused ion beam

[0116] Sp Processing Space

[0117] 1, 1A, 1B, 1C, 1D, 1E, 1F, 1G, 1H, 1I, 1J Processing equipment

[0118] 2 Differential exhaust

[0119] 3 Focused ion beam column (FIB column)

[0120] 4 Substrate support

[0121] 6 Photomask

[0122] 6A Treated surface

[0123] 7 Head

[0124] 8 Head body

[0125] 8B Opening

[0126] 9 slot forming plate

[0127] 9A Opposite side

[0128] 9B Conical surface

[0129] 9C Rounded corners

[0130] 9D, 9E, 9F, 9G, 9H Ring Plate

[0131] 10A, 10B, 10C, 10D Annular groove

[0132] 11 Opening

[0133] 14. Lens tube

[0134] 15 Focused Ion Beam Optics

[0135] 16 Floating pad

[0136] 17 Microchannel Plate

[0137] 17A Ion beam port

[0138] 17B Testing Department

[0139] 30 Optical Calibration Microscope

[0140] 31. Optical microscope

[0141] 33 X-Y gantry worktable

Claims

1. A processing device comprising: A differential exhaust device, comprising a head, the head being opposed to an arbitrary area of ​​a processed surface of a processed substrate, a plurality of annular grooves being formed on an opposing surface of the head opposing the processed surface, the plurality of annular grooves surrounding the center of the head, an opening being provided in an area of ​​the head closer to the innermost annular groove of the plurality of annular grooves, the opening forming a processing space capable of processing the processed surface, a vacuum pump being connected to at least one of the plurality of annular grooves, and the processing space being set to a high vacuum degree by a suction action from the annular groove in a state where the opposing surface is opposed to the processed surface; and A focused ion beam columnar body is arranged on the side of the head opposite to the facing surface, and is provided with a lens barrel connected to the opening and capable of communicating with the processing space, wherein a focused ion beam optical system is built in the lens barrel so that the focused ion beam is emitted through the opening. The innermost annular groove is connected to a raw material gas supply unit, and the raw material gas is ejected from the annular groove toward the processed surface so that the raw material gas can move along the processed surface toward the processing space. The head includes a head body and a groove forming plate, the groove forming plate being mounted on a surface of the head body on a side facing the substrate to be processed. The surface of the groove forming plate facing the substrate to be processed is the facing surface. A microchannel plate is arranged in the front end of the barrel, and an ion beam passage port for the focused ion beam to pass through is formed on the microchannel plate. The periphery of the ion beam passage port of the microchannel plate is used as a detection part capable of capturing secondary charged particles generated from the processed substrate.

2. The processing device according to claim 1, wherein: The groove forming plate is arranged in an island shape within the contour of the surface of the head body on the side facing the substrate to be processed, A stepped portion formed by a surface of the head body on the side facing the substrate to be processed and an outer peripheral portion of the groove forming plate is formed into a tapered shape.

3. The processing device according to claim 1, wherein: The groove forming plate is arranged in an island shape within the contour of the surface of the head body on the side facing the substrate to be processed, A shoulder of a step portion formed by a surface of the head body on the side facing the substrate to be processed and an outer peripheral portion of the groove forming plate is formed as a rounded portion.

4. The processing device according to any one of claims 1 to 3, wherein: The groove forming plate is composed of a plurality of annular plates arranged to surround the center of the head.

5. The processing device according to any one of claims 1 to 3, wherein: The processing device includes an optical microscope that detects the alignment mark formed on the substrate to be processed.

6. The processing device according to any one of claims 1 to 3, wherein: The processing device includes an observation microscope at an offset distance near the head portion, and the observation microscope is used to observe a processed region of the processed substrate.

7. The processing device according to any one of claims 1 to 3, wherein: The processing device includes a plurality of the focused ion beam columns, each of which includes the differential exhaust device at a front end portion, and each of the focused ion beam columns is arranged to face a plurality of regions that divide the processing surface of the processing substrate.

8. The processing device according to any one of claims 1 to 3, wherein: The position of the substrate to be processed is fixed, and the focused ion beam column having the differential exhaust device provided at the front end thereof is movable in the XY direction relative to the substrate to be processed.

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