Organic electroluminescent composition, organic electroluminescent device and display device containing the same

Abstract

The present invention discloses an organic electroluminescent composition, an organic electroluminescent device and a display device comprising the same. The organic electroluminescent composition comprises: a first host material selected from an N-type organic semiconductor material as shown in the following formula I: a second host material selected from a P-type organic semiconductor material. The technical solution can at least solve the problem of more Dexter energy transfer, TTA and TPQ in phosphorescent devices, which leads to serious efficiency roll-off at high current density.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and more specifically, to an organic electroluminescent composition, an organic electroluminescent device and a display device comprising the same. Background Art

[0002] In current phosphorescent devices, the light-emitting layer is a combination of a host and a phosphorescent guest, wherein the host material is a combination of a hole-type host (P-type) and an electron-type host, and the P-type host and the N-type host can form an exciton complex. Under electrical excitation, electrons and holes recombine on the host to form excitons, which are transferred from the host to the phosphorescent guest (Dopant) through energy transfer, and then emit light through the Dopant radiation transition. Therefore, the selection of the host material is crucial to improving device performance, especially for reducing efficiency roll-off.

[0003] First, the choice of host material affects the efficiency of energy transfer from the host to the Dopant. Due to the smaller ΔEst of the exciplex host, the triplet (T1) exciton can cross to the singlet (S1) state through reverse intersystem crossing, thereby transferring the Forster energy to the phosphorescent guest, inhibiting the Dexter energy transfer between the host and the guest. At present, most host materials have a relatively planar structure, which will lead to insufficient reverse intersystem crossing (RISC) process and more Dexter energy transfer.

[0004] Secondly, the choice of host material affects the transport balance and recombination area of ​​holes and electrons. The exciton recombination area of ​​the phosphorescent device system is concentrated on the Prime side, which easily leads to the occurrence of TTA and TPQ, resulting in serious efficiency roll-off at high current density.

[0005] Optimize the carrier transport balance so that the exciton recombination area is widened and moves to the light-emitting layer Summary of the invention

[0006] Based on the above facts, the present invention provides an organic electroluminescent composition, an organic electroluminescent device and a display device comprising the same, which can at least solve the problem of more Dexter energy transfer, TTA and TPQ in phosphorescent devices, resulting in serious efficiency roll-off at high current density.

[0007] In a first aspect, the present invention provides an organic electroluminescent composition comprising:

[0008] The first host material is selected from the N-type organic semiconductor material shown in the following formula I:

[0009]

[0010] in:

[0011] X1, X2 and X3 are independently selected from CR9 or N, and at least one of them is N;

[0012] Y1 and Y2 are independently selected from any one of a single bond, H, O, S, Se, C=O, S(=O)2, CR10R11, SiR10R11, NR10, PR10, P(=O)R10, and BR10;

[0013] A1, A2, A3, A4 are independently selected from substituted or unsubstituted aromatic rings, substituted or unsubstituted aromatic heterocycles, substituted or unsubstituted aromatic fused heterocycles;

[0014] R1, R2, R3, R4, R9, R10, and R11 are each independently selected from hydrogen, tritium, a halogen atom, a nitrile group, a nitro group, a hydroxyl group, a carbonyl group, an ester group, an imide group, an amide group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted alkylthio group, a substituted or unsubstituted arylthio group, a substituted or unsubstituted alkylsulfonyl group, a substituted or unsubstituted arylsulfonyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted silyl group, a substituted or unsubstituted boron group, a substituted or unsubstituted amine group, a substituted or unsubstituted arylphosphino group, a substituted or unsubstituted phosphine oxide group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heteroaryl group, and a substituted or unsubstituted heterocyclic group, and they may be optionally bonded to adjacent groups to form a ring;

[0015] n1 is an integer selected from 0-3, n2-n4 are independently selected from integers selected from 0-4;

[0016] L1, L2, and L3 are each independently selected from a single bond, a substituted or unsubstituted alkyl chain having 1 to 30 carbon atoms, a substituted or unsubstituted arylene group having 6 to 30 carbon atoms, and a substituted or unsubstituted heteroarylene group having 6 to 30 carbon atoms;

[0017] Ar is selected from substituted or unsubstituted aryl, substituted or unsubstituted heteroaryl;

[0018] The second host material is selected from P-type organic semiconductor materials.

[0019] Optionally, when under the action of electricity or light, the N-type organic semiconductor material forms an exciplex with the P-type organic semiconductor material.

[0020] Optionally, the P-type organic semiconductor material contains an indole-condensed electron-donating group in its structure.

[0021] Optionally, the P-type organic semiconductor material has a structure as shown in the following formula II:

[0022]

[0023] in:

[0024] A3 and A4 are independently selected from substituted or unsubstituted aromatic rings, substituted or unsubstituted aromatic heterocycles, substituted or unsubstituted aromatic fused heterocycles;

[0025] R5, R6, R7, and R8 are each independently selected from hydrogen, tritium, a halogen atom, a nitrile group, a nitro group, a hydroxyl group, a carbonyl group, an ester group, an imide group, an amide group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted alkylthio group, a substituted or unsubstituted arylthio group, a substituted or unsubstituted alkylsulfonyl group, a substituted or unsubstituted arylsulfonyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted silyl group, a substituted or unsubstituted boron group, a substituted or unsubstituted amine group, a substituted or unsubstituted arylphosphino group, a substituted or unsubstituted phosphine oxide group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heteroaryl group, and they may be optionally bonded to an adjacent group to form a ring;

[0026] n5-n8 are independently selected from integers of 0-4.

[0027] Optionally, the structure of the P-type organic semiconductor material further contains a three-dimensional alkyl substituent.

[0028] Optionally, the mass ratio of the N-type organic semiconductor material to the P-type organic semiconductor material is 2:8-8:2.

[0029] Optionally, the reorganization energy of the N-type organic semiconductor material is between 0.16 and 0.40; and the reorganization energy of the P-type organic semiconductor material is between 0.10 and 0.30.

[0030] Optionally, an absolute value of a difference between a HOMO energy level of the N-type organic semiconductor material and a LUMO energy level of the P-type organic semiconductor material is between 2.3 eV and 3.3 eV.

[0031] Optionally, the T1 energy level of the P-type organic semiconductor material is between 1.8 eV and 2.7 eV.

[0032] Optionally, the T1 energy level of the N-type organic semiconductor material is between 1.9 eV and 2.8 eV.

[0033] Optionally, the ΔEst of the exciplex is between 0-0.25 eV.

[0034] In a second aspect, the present invention provides an organic electroluminescent device, wherein at least one functional layer of the organic electroluminescent device contains the organic electroluminescent composition provided in the second aspect above.

[0035] Optionally, the functional layer is a host layer, and the host layer contains a host material and a guest material; wherein the host material is composed of the organic electroluminescent composition.

[0036] In a third aspect, the present invention provides a display device, comprising the organic electroluminescent device provided in the third aspect above.

[0037] The beneficial effects of the present invention are as follows:

[0038] In the organic electroluminescent composition provided by the present invention, in the structure of the N-type organic semiconductor material, at least two large stereoscopic structures of adamantane and spiro ring are connected on the electron-withdrawing group; the P-type organic semiconductor material has an indole-fused electron-donating group. This special structural combination can increase the distance between frontier orbits, so that the formed exciplex has a small ΔEst and a higher RISC. At the same time, the introduction of the stereoscopic structure can inhibit Dexter energy transfer and enhance Forster energy transfer, thereby reducing the triplet exciton concentration, reducing triplet-triplet exciton annihilation (TTA), and triplet-polaron quenching (TPQ), so as to improve the efficiency Roll off of the organic electroluminescent device using the same. In addition, in the composition of the present invention, two unique large stereo structures introduced on the N-type main electron-withdrawing group can effectively reduce the conjugation of the molecule, thereby reducing the electron mobility of the main body of the phosphorescent organic electroluminescent device. The reduction of electron mobility can adjust the exciton recombination area to move toward the inside of the light-emitting layer, broaden the exciton recombination area, thereby reducing the charge and exciton accumulation at the interface between the light-emitting layer and the Prime, reducing TTA and TPQ, to further improve the efficiency Roll off and enhance the device efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] The specific implementation modes of the present invention are further described in detail below in conjunction with the accompanying drawings.

[0040] Figure 1 A technical solution of the inventor and a schematic diagram of energy transfer in the light-emitting layer of an organic electroluminescent device in an embodiment of the present application are shown.

[0041] Figure 2 The figure shows the relationship between the exciton density and the distance from the Prime side in a certain organic electroluminescent device scheme of the inventor.

[0042] Figure 3 A schematic diagram showing hole transport energy transition.

[0043] Figure 4Schematic diagram showing the distance between the HOMO distribution fragment plane and the LUMO distribution fragment plane of the exciplex. DETAILED DESCRIPTION

[0044] In order to more clearly illustrate the present invention, the present invention is further described below in conjunction with preferred embodiments and accompanying drawings. Similar components in the accompanying drawings are represented by the same reference numerals. It should be understood by those skilled in the art that the content specifically described below is illustrative rather than restrictive, and should not be used to limit the scope of protection of the present invention.

[0045] The solution of the phosphorescent device in which the light-emitting layer is a combination of a dual host and a phosphorescent guest has the problem of efficiency roll-off. This embodiment provides an organic electroluminescent composition, an organic electroluminescent device and a display device including the same.

[0046] One embodiment of the present invention provides an organic electroluminescent composition, comprising:

[0047] The first host material is selected from an N-type organic semiconductor material having a structure shown in Formula I below:

[0048]

[0049] in:

[0050] X1, X2 and X3 are independently selected from CR9 or N, and at least one of them is N;

[0051] Y1 and Y2 are independently selected from any one of a single bond, H, O, S, Se, C=O, S(=O)2, CR10R11, SiR10R11, NR10, PR10, P(=O)R10, and BR10;

[0052] A1, A2, A3, A4 are independently selected from substituted or unsubstituted aromatic rings, substituted or unsubstituted aromatic heterocycles, substituted or unsubstituted aromatic fused heterocycles;

[0053] R1, R2, R3, R4, R9, R10, and R11 are each independently selected from hydrogen, tritium, a halogen atom, a nitrile group, a nitro group, a hydroxyl group, a carbonyl group, an ester group, an imide group, an amide group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted alkylthio group, a substituted or unsubstituted arylthio group, a substituted or unsubstituted alkylsulfonyl group, a substituted or unsubstituted arylsulfonyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted silyl group, a substituted or unsubstituted boron group, a substituted or unsubstituted amine group, a substituted or unsubstituted arylphosphino group, a substituted or unsubstituted phosphine oxide group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heteroaryl group, and a substituted or unsubstituted heterocyclic group, and they may be optionally bonded to adjacent groups to form a ring;

[0054] n1 is an integer selected from 0-3, n2-n4 are independently selected from integers selected from 0-4;

[0055] L1, L2, and L3 are each independently selected from a single bond, a substituted or unsubstituted alkyl chain having 1 to 30 carbon atoms, a substituted or unsubstituted arylene group having 6 to 30 carbon atoms, and a substituted or unsubstituted heteroarylene group having 6 to 30 carbon atoms;

[0056] Ar is selected from substituted or unsubstituted aryl, substituted or unsubstituted heteroaryl;

[0057] The second host material is selected from P-type organic semiconductor materials.

[0058] In the organic electroluminescent composition of this embodiment, by designing the main material molecule, controlling the distance between the HOMO and LUMO of the exciplex, increasing the frontier orbital distance of the main body of the exciplex, and reducing the electron mobility of the N-type component, the energy transfer efficiency in the organic electroluminescent device is improved, the carrier transport balance is optimized, and the exciton recombination area is adjusted so that the exciton recombination area is widened and moved toward the light-emitting layer, thereby reducing TTA and TPQ and improving the efficiency roll-off phenomenon in the phosphorescent organic electroluminescent device using it.

[0059] like Figure 1As shown, in a certain technical solution of the inventor, the P-type organic semiconductor material body and the N-type organic semiconductor material body do not contain large stereo fragments, such as adamantane, spirofluorene, spiroxanthene, etc., and the molecular planarity is good. After the formation of the exciplex, the distance between HOMO and LUMO is close, and ΔEst is large, which is not conducive to the reverse intersystem crossing of the exciplex body, and the Dexter energy transfer from the host to the guest is more. In this embodiment, by introducing a large stereo structure on the body, especially introducing adamantane and spirocyclic structure on the N-type organic semiconductor material body at the same time, the distance r between the HOMO and LUMO of the exciplex body can be increased, thereby reducing ΔEst, inhibiting the Dexter energy transfer between the host and the guest, and strengthening the Forster energy transfer, thereby reducing the triplet exciton density, reducing the TTA and TPQ effects, and improving the efficiency roll-off.

[0060] Attached Figure 2 The figure shows the relationship between the exciton density and the distance from the Prime side in an organic electroluminescent device in a technical solution of the above inventor. In the figure, the horizontal axis is the distance from the Prime side, and the unit is The vertical axis is the exciton density (the Prime layer is adjacent to the anode side of the light-emitting layer, and the HBL is adjacent to the cathode side of the light-emitting layer). This figure illustrates that in the technical solution of the inventor's organic electroluminescent device, the distance from Prime is greater than After that, the exciton density is extremely low, and most of the excitons are distributed in the light-emitting layer close to the Prime layer. Middle (luminescent layer ), the exciton recombination area is the Prime side of the light-emitting layer, so at this time, introducing a large three-dimensional structure into the N-type organic semiconductor material to reduce conjugation and electron mobility can balance the carriers and move the exciton recombination area to the inside of the light-emitting layer, thereby reducing TTA and TPQ and improving efficiency roll-off.

[0061] In some embodiments, when under the action of electricity or light, the N-type organic semiconductor material forms an exciplex with the P-type organic semiconductor material.

[0062] In some embodiments, the N-type organic semiconductor material has a structure shown in one of the following formulae:

[0063]

[0064]

[0065]

[0066]

[0067] In some embodiments, the P-type organic semiconductor material contains an indole-fused electron-donating group in its structure.

[0068] In some specific embodiments, the P-type organic semiconductor material has a structure shown in the following formula II:

[0069]

[0070] in:

[0071] A3 and A4 are independently selected from substituted or unsubstituted aromatic rings, substituted or unsubstituted aromatic heterocycles, substituted or unsubstituted aromatic fused heterocycles;

[0072] R5, R6, R7, and R8 are each independently selected from hydrogen, tritium, a halogen atom, a nitrile group, a nitro group, a hydroxyl group, a carbonyl group, an ester group, an imide group, an amide group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted alkylthio group, a substituted or unsubstituted arylthio group, a substituted or unsubstituted alkylsulfonyl group, a substituted or unsubstituted arylsulfonyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted silyl group, a substituted or unsubstituted boron group, a substituted or unsubstituted amine group, a substituted or unsubstituted arylphosphino group, a substituted or unsubstituted phosphine oxide group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heteroaryl group, and they may be optionally bonded to an adjacent group to form a ring;

[0073] n5-n8 are independently selected from integers of 0-4.

[0074] The P-type organic semiconductor material has a high hole mobility, and the introduction of a large stereostructure on the main material can increase the distance of the frontier orbitals, reduce the ΔEst of the formed exciplex, inhibit the Dexter energy transfer between the host and the guest, and enhance the Forster energy transfer, thereby reducing the triplet exciton density, reducing the triplet-triplet exciton annihilation (TTA) and triplet-polaron quenching (TPQ) effects, and improving the efficiency roll-off.

[0075] In some other embodiments, the structure of the P-type organic semiconductor material further contains a three-dimensional alkyl substituent.

[0076] In some embodiments, the P-type organic semiconductor material has a structure shown in one of the following formulae:

[0077]

[0078]

[0079]

[0080]

[0081] In some embodiments, the mass ratio of the N-type organic semiconductor material to the P-type organic semiconductor material is 2:8-8:2. Exemplarily, the mass ratio of the two includes but is not limited to 3:7-7:3, 4:6-6:4, 5:5, etc.

[0082] In Marcus theory, the charge transfer rate K is:

[0083]

[0084] Among them, ΔG 0 is the change in reaction free energy. For the leapfrog model, ΔG 0 = 0; V is called the transport integral or charge transfer integral; λ is called the reorganization energy, i.e., ROE (reorganization energy). The reorganization energy includes internal reorganization energy and external reorganization energy. However, in the carrier transport process of crystals and amorphous films, the external reorganization energy is very small and can be ignored. In this paper, λ and ROE are both internal reorganization energies.

[0085] Calculation of λ:

[0086] ①Hole transport

[0087] like Figure 3 As shown, λ hole =λ(Ⅰ)+λ(II)=(E3-E1)+(E2-E4),

[0088] Among them, the energy of the neutral state is E1 calculated under the neutral state structure, the energy of the cationic state is E2 calculated under the neutral state structure, the energy of the neutral state is E3 calculated under the cationic state structure, and the energy of the cationic state is E4 calculated under the cationic state structure;

[0089] ②Electronic transmission

[0090] Similar to hole transport, λ electron =λ(III)+λ(IV)=(E6-E1)+(E5-E7);

[0091] Among them, the energy of the neutral state is E1 calculated under the neutral state structure, the energy of the anion state is E5 calculated under the neutral state structure, the energy of the neutral state is E6 calculated under the anion state structure, and the energy of the anion state is E7 calculated under the anion state structure;

[0092] From Marcus theory, we know that the smaller the reorganization energy λ, the larger K is. Therefore, when designing OLED material molecules, we hope to obtain a small λ. At the same time, we must consider the balance of charge transfer. Therefore, the ROE of the light-emitting layer material must be considered comprehensively based on the device.

[0093] In some embodiments, the reorganization energy ROE of the N-type organic semiconductor material is between 0.16 and 0.40; and the reorganization energy ROE of the P-type organic semiconductor material is between 0.10 and 0.30.

[0094] In some embodiments, the absolute value of the difference between the HOMO energy level of the N-type organic semiconductor material and the LUMO energy level of the P-type organic semiconductor material is between 2.3 eV and 3.6 eV.

[0095] In some embodiments, the T1 energy level of the P-type organic semiconductor material is between 1.8 eV and 2.7 eV.

[0096] In some embodiments, the T1 energy level of the N-type organic semiconductor material is between 1.9 eV and 2.8 eV.

[0097] In some embodiments, the ΔEst of the exciplex is between 0-0.25 eV.

[0098] Yet another embodiment of the present invention provides an organic electroluminescent device, wherein at least one functional layer of the organic electroluminescent device contains the organic electroluminescent composition as described above.

[0099] In some embodiments, the functional layer is a host layer, and the host layer comprises a host material and a guest material; wherein the host material is composed of the organic electroluminescent composition.

[0100] The organic electroluminescent device in the present disclosure is a phosphorescent device.

[0101] Yet another embodiment of the present invention provides a display device, which includes the organic electroluminescent device as described in the above embodiment.

[0102] The technical solution of the present invention is described below in conjunction with some specific embodiments:

[0103] It should be noted that, unless otherwise specified, the materials used in this embodiment can be commercially available. The properties of some materials used in the following embodiments and comparative examples are shown in Table 1 below.

[0104] Table 1

[0105] Material HOMO / eV LUMO / eV S1 / eV T1 / eV ROE N-1 5.76 2.73 2.83 2.15 0.24 N-9 5.85 2.82 2.87 2.18 0.25 N-23 5.85 2.82 2.80 2.18 0.21 N-31 5.65 2.60 2.88 2.19 0.23 N-com1 5.77 2.75 2.76 2.16 0.19 P-1 5.32 2.38 3.03 2.06 0.23 P-9 5.33 2.37 3.00 2.26 0.24 P-29 5.35 2.38 2.85 2.15 0.24 P-35 5.32 2.36 3.01 2.24 0.19 P-com1 5.28 2.27 2.83 2.18 0.17

[0106] Among them, the structural formulas of N-com1 and P-com1 are as follows:

[0107]

[0108] In common exciplex hosts, the HOMO of the exciplex is on the P-type molecule, and the LUMO of the exciplex is on the N-type molecule. Specifically in the present invention, the HOMO electron cloud of the exciplex is distributed in the fused fragment of the P-type molecule, and the LUMO electron cloud of the exciplex is mainly distributed in the azine and its adjacent fragments. The distance r between HOMO and LUMO refers to: the distance between the plane of the HOMO distribution fragment of the exciplex and the plane of the LUMO distribution fragment. The specific schematic diagram is as follows: Figure 4 When a large stereogenic group is introduced into an N-type or P-type molecule, it is beneficial to increase r, thereby reducing ΔEst of the excited complex.

[0109] In the following embodiments and comparative examples, the distance between HOMO and LUMO in the light-emitting layer is shown in Table 2.

[0110] Table 2

[0111]

[0112] Unless otherwise specified, the raw materials used in the embodiments of the present invention can be obtained through commercial sources or conventional techniques in the art, and are not described in detail here.

[0113] The structures of the organic electroluminescent devices of various embodiments and comparative examples are shown in Table 3 below:

[0114] Table 3

[0115] serial number HIL HTL EBL EML HBL ETL EIL Example 1 √ √ √ N-1∶P-1(5∶5):RD(2%) √ √ √ Example 2 √ √ √ N-9∶P-9(5∶5):RD(2%) √ √ √ Example 3 √ √ √ N-23∶P-29(5∶5):RD(2%) √ √ √ Example 4 √ √ √ N-31∶P-35(5∶5):RD(2%) √ √ √ Example 5 √ √ √ N-9∶P-9(4∶6):RD(2%) √ √ √ Example 6 √ √ √ N-9∶P-9(6∶4):RD(2%) √ √ √ Comparative Example 1 √ √ √ N-com1:P-1(5:5):RD(2%) √ √ √ Comparative Example 2 √ √ √ N-1:P-com1(5:5):RD(2%) √ √ √ Comparative Example 3 √ √ √ N-com1:P-com1(5:5):RD(2%) √ √ √

[0116] In Table 3 above, the host material in the light-emitting layer (EML) is an N-type organic semiconductor material and a P-type organic semiconductor material, the ratio of the two is a mass ratio, and RD is a guest material, and its addition amount is a percentage relative to the total mass of the host material.

[0117] Among them, the materials of the above-mentioned other functional layers are specifically:

[0118]

[0119] Preparation of the above organic electroluminescent device:

[0120] The prepared ITO substrate is cleaned and dried; HIL material, HTL material, and R-Prime (EBL) material are sequentially evaporated on the anode; then EML layer material is evaporated; HBL material, ETL material, and EIL (LiF) material are evaporated on the light-emitting layer; and then the cathode is evaporated.

[0121] The device structure is: HIL (5nm) / HTL (100nm) / EBL (60nm) / N-1∶P-1∶RD (40nm) / HBL (5nm) / ETL (30nm) / LiF (1nm) / Al (150nm).

[0122] At room temperature, test 20mA / cm 2 The IVL (current-voltage-brightness) and life characteristics under a current density of , LT95 refers to the time taken for the brightness to drop to 95% of the original brightness, and the IVL and life of the organic electroluminescent devices prepared in the above-mentioned organic electroluminescent device embodiments and comparative examples are tested.

[0123] The results are shown in Table 4 below.

[0124] Table 4

[0125] serial number V Cd ClEx CIE LT95 Efficiency roll-off Example 1 101％ 103％ 0.68 0.31 102％ 6.2％ Example 2 102％ 102％ 0.68 0.31 102％ 6.3％ Example 3 101％ 104％ 0.68 0.31 103％ 6.0％ Example 4 100％ 102％ 0.68 0.31 101％ 6.7％ Example 5 101％ 104％ 0.68 0.31 103％ 6.1％ Example 6 102％ 101％ 0.68 0.31 101％ 7.1％ Comparative Example 1 101％ 98％ 0.68 0.31 100％ 10.8％ Comparative Example 2 102％ 101％ 0.68 0.31 101％ 9.8％ Comparative Example 3 100％ 100％ 0.68 0.31 100％ 11.3％

[0126] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not limitations on the implementation methods of the present invention. For ordinary technicians in the relevant field, other different forms of changes or modifications can be made based on the above description. It is impossible to list all the implementation methods here. All obvious changes or modifications derived from the technical solution of the present invention are still within the protection scope of the present invention.

Claims

1. An organic electroluminescent composition, characterized in that: Comprising: a first main body material and a second main body material; The first host material is selected from N-type organic semiconductor materials, and the second host material is selected from P-type organic semiconductor materials; Wherein, the first main material is selected from , the second main material is selected from ;or The first host material is selected from , the second main material is selected from ;or The first host material is selected from , the second main material is selected from ;or The first host material is selected from , the second main material is selected from .

2. The organic electroluminescent composition according to claim 1, characterized in that: The mass ratio of the N-type organic semiconductor material to the P-type organic semiconductor material is 2:8-8:

2.

3. An organic electroluminescent device, characterized in that: At least one functional layer in the organic electroluminescent device contains the organic electroluminescent composition according to any one of claims 1 to 2.

4. The organic electroluminescent device according to claim 3, characterized in that: The functional layer is a main layer, and the main layer contains a main material and a guest material; wherein the main material is composed of the organic electroluminescent composition.

5. A display device, characterized in that: The organic electroluminescent device comprises the organic electroluminescent device as claimed in any one of claims 3 to 4.

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