Apparatus for processing substrate and method for processing substrate

Abstract

The present invention relates to an apparatus for processing a substrate and a method for processing a substrate. The substrate processing apparatus includes: a chamber providing a processing space; a support unit supporting a substrate at the processing space; a gas supply unit configured to introduce gas into the processing space; a plasma source configured to provide energy for exciting the gas introduced into the processing space into plasma; an exhaust unit configured to exhaust the atmosphere in the processing space to the outside of the processing space; and a heating source positioned above the support unit, wherein the heating source applies heating energy to the substrate in a pulsed form.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2021-0081501, filed on June 23, 2021, in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0003] Embodiments of the inventive concepts described herein relate to a substrate processing apparatus and a substrate processing method. Background Art

[0004] Isotropic atomic layer etching is a method that removes controlled amounts of material in all directions and uses heat to perform an adsorption reaction for modifying the surface film and a desorption reaction for removing the modified film. The reaction temperatures required for the adsorption and desorption reactions vary depending on the substrate type and the type of precursor used in the adsorption or desorption reaction. Typically, adsorption reactions are highly reactive at low temperatures (e.g., room temperature to 200°C), while desorption reactions are highly reactive at very high temperatures (e.g., 400°C or higher).

[0005] However, when a conventional heater in an electrostatic chuck is used to heat a substrate, it is difficult to separate the substrate and expose it to the optimal temperature for adsorption and desorption reactions, so the substrate is processed at a fixed temperature where both adsorption and desorption reactions are possible. As a result, both adsorption and desorption reactions are possible, but as the process is carried out for a long time at a fixed temperature with low reactivity, the unit output per hour (UPH) decreases. In addition, if the temperature of the electrostatic chuck is excessively heated to 500°C or higher in order to increase reactivity, the substrate is exposed to high temperatures for a long time, resulting in damage such as loss of device function, pattern collapse, and substrate cracking due to molecular diffusion within the carefully manufactured semiconductor structure.

[0006] On the other hand, there is also a method to overcome hardware limitations by installing a heat source on top of the substrate to enable rapid transition to the optimal temperature required for the adsorption or desorption reaction. However, due to the characteristics of conventional heat source equipment, it is difficult to control the amount of energy applied to the substrate and the exposure time, so the heat is deeply transferred into the substrate. Accordingly, after exposure to the high temperature required for the desorption reaction, there is a delay in cooling to the temperature required for the adsorption reaction. Due to the cost required for rapid cooling, the UPH is not effectively reduced compared to the above-mentioned prior art. Moreover, due to the high temperature transferred deeply, this can damage micro-semiconductor devices composed of various materials.

[0007] Therefore, due to the limitation that the temperature of the substrate cannot be freely changed, it is inevitable to perform the isotropic atomic layer etching process within a limited process window. Summary of the Invention

[0008] Embodiments of the present inventive concept provide a substrate processing apparatus and a substrate processing method for solving the above-mentioned problems.

[0009] Embodiments of the inventive concept provide a substrate processing apparatus and a substrate processing method for efficiently processing a substrate.

[0010] Embodiments of the present inventive concept provide a substrate processing apparatus and a substrate processing method for reducing a process time while satisfying both a temperature for an adsorption reaction and a temperature for a desorption reaction.

[0011] Embodiments of the inventive concept provide a substrate processing apparatus and a substrate processing method for increasing a process window.

[0012] Embodiments of the inventive concept provide a substrate processing apparatus and a substrate processing method for heating to a high temperature while preventing damage to a wafer and equipment.

[0013] The technical objectives of the present inventive concept are not limited to the above-mentioned technical objectives, and other unmentioned technical objectives will become apparent to those skilled in the art from the following description.

[0014] The present inventive concept provides a substrate processing apparatus. The substrate processing apparatus includes: a chamber providing a processing space; a support unit supporting a substrate at the processing space; a gas supply unit configured to introduce gas into the processing space; a plasma source configured to provide energy for exciting the gas introduced into the processing space into plasma; an exhaust unit configured to exhaust the atmosphere in the processing space to the outside of the processing space; and a heating source positioned above the support unit, wherein the heating source applies heating energy to the substrate in a pulsed form.

[0015] In an embodiment, the pulses have a pulse width of picoseconds (ps) to milliseconds (ms).

[0016] In an embodiment, the heating source is pulsed a few to millions of times within a 10 millisecond period.

[0017] In embodiments, the heating energy heats the substrate to 400° C. or above.

[0018] In an embodiment, the heating energy is 10 mJ / cm 2or higher energy is applied to the substrate.

[0019] In an embodiment, the heating energy is 10 mJ / cm 2 Up to 100mJ / cm 2 The energy is applied to the substrate.

[0020] In embodiments, the heating source is a flash lamp, laser optics, or a microwave generator.

[0021] In an embodiment, the support unit includes a plate in which a flow path through which the cooling fluid flows is formed.

[0022] In an embodiment, the plasma source includes: a top electrode including a first plate that transmits light or microwaves, and a transparent conductive film stacked at the first plate; a bottom electrode disposed below a substrate; and a high-frequency power supply that applies high-frequency power to at least one of the top electrode or the bottom electrode, and wherein a heating source is disposed above the top electrode.

[0023] In the embodiment, the substrate processing device also includes a controller, and wherein the controller performs: a first step, which is to control the gas supply unit to introduce a first process gas into the processing space, and control the plasma source to excite the first process gas that has been introduced into plasma to process the substrate; a second step, which is to control the gas supply unit to introduce a purge gas into the processing space, and control the exhaust unit to exhaust the processing space; a third step, which is to control the gas supply unit to introduce a second process gas into the processing space, control the plasma source to excite the second process gas that has been introduced into plasma, and control the heating source to apply heating energy in pulses to process the substrate; and a fourth step, which is to control the gas supply unit to introduce a purge gas into the processing space, and control the exhaust unit to exhaust the processing space, and wherein the first step to the fourth step are controlled to be repeated multiple times in sequence.

[0024] In an embodiment, the support unit includes a plate in which a flow path through which the cooling fluid flows is formed, and wherein the controller controls the cooling fluid to flow at the flow path of the plate in the third step.

[0025] The present invention provides a substrate processing method. The method includes: introducing a first process gas into a processing space and exciting the introduced first process gas into plasma to process a substrate as a first step; introducing a purge gas into the processing space and exhausting the processing space as a second step; introducing a second process gas into the processing space, exciting the introduced second process gas into plasma, and applying pulsed heating energy as a third step; and applying a purge gas into the processing space and exhausting the processing space as a fourth step, wherein the first to fourth steps are repeated multiple times in sequence.

[0026] In an embodiment, the pulses have a pulse width of picoseconds (ps) to milliseconds (ms).

[0027] In an embodiment, the heating energy is pulsed a few to millions of times over a period of 10 milliseconds.

[0028] In embodiments, the heating energy heats the substrate to 400° C. or greater.

[0029] In an embodiment, the heating energy is 10 mJ / cm 2 or higher energy is applied to the substrate.

[0030] In an embodiment, the heating energy is 10 mJ / cm 2 Up to 100mJ / cm 2 The energy is applied to the substrate.

[0031] In embodiments, the heating energy is flash, laser, or microwave.

[0032] In an embodiment, the bottom surface of the substrate is cooled in the third step.

[0033] In an embodiment, the support unit includes a chuck supporting the substrate and a cooling plate configured to cool the substrate, and wherein the heating source heats the substrate from a surface to a depth of 100 μm.

[0034] In an embodiment, the support unit includes: a chuck supporting the substrate and a cooling plate configured to cool the substrate, and wherein the heating source heats the substrate from the surface to a depth of 200 μm and the cooling plate cools the bottom surface of the substrate.

[0035] The present invention provides a substrate processing apparatus. The substrate processing apparatus includes: a chamber providing a processing space; a support unit supporting a substrate at the processing space, the support unit including a plate in which a flow path through which a cooling fluid flows is formed; a gas supply unit configured to introduce gas into the processing space; a plasma source configured to provide energy for exciting the gas introduced into the processing space into plasma; an exhaust unit configured to exhaust the atmosphere in the processing space to the outside of the processing space; and a heating source positioned above the support unit and configured as any one of a flash lamp, a laser optical system, or a microwave generator, wherein the plasma source includes: a top electrode including a first plate transmitting light or microwaves and a transparent conductive film stacked at the first plate; a bottom electrode disposed below the substrate; and a high-frequency power supply applying high-frequency power to at least one of the top electrode or the bottom electrode, wherein the heating source is disposed above the top electrode and applies 10 mJ / cm 2 Up to 100mJ / cm 2 Heating energy in the form of pulses is applied to the substrate, and the pulses are applied several times to hundreds of times within a period of 1 millisecond.

[0036] According to an embodiment of the present inventive concept, a temperature required for a desorption reaction may be reached and a desorption reaction may be obtained within a few milliseconds (ms).

[0037] According to an embodiment of the inventive concept, a substrate surface can be exposed to a high temperature in a very short time while being heated to a high temperature for a desorption reaction, thereby preventing loss of device function and substrate cracking due to exposure to a high temperature.

[0038] According to an embodiment of the inventive concept, the adsorption process may be performed at 400° C. or higher.

[0039] According to embodiments of the inventive concept, various types of precursors may be introduced as the process window is expanded.

[0040] According to embodiments of the inventive concept, a substrate may be efficiently processed.

[0041] Effects of the present inventive concept are not limited to the above-mentioned effects, and other unmentioned effects will become apparent to those skilled in the art from the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] The above and other objects and features will become apparent from the following description with reference to the following drawings, in which like reference numerals refer to like parts throughout the various drawings unless otherwise specified, and in which:

[0043] Figure 1 A substrate processing apparatus according to a first embodiment of the present inventive concept is illustrated.

[0044] Figure 2 FIG. 3 is an enlarged view showing a portion of a cross section of the top electrode 310 .

[0045] Figure 3 It shows the state of the device when performing the adsorption process.

[0046] Figure 4 It shows a state when the apparatus performs a purge process after the adsorption process.

[0047] Figure 5 It shows the state of the device when performing the desorption process.

[0048] Figure 6 It shows the state of the apparatus when performing a purge process after the desorption process.

[0049] Figure 7 A substrate treating apparatus according to a second embodiment of the present inventive concept is illustrated.

[0050] Figure 8 Reactions of the substrate when performing an adsorption process, a purge process after the adsorption process, a desorption process, and a purge process after the desorption process are shown.

[0051] Figure 9 is a flowchart of a substrate processing method according to an embodiment of the present inventive concept, and illustrates the power of heating energy applied and temperature change of a substrate surface in a desorption process.

[0052] Figure 10 FIG. 4 is a temperature curve diagram showing the degree of heating at each depth of the substrate W when pulse energy is applied.

[0053] Figure 11 FIG. 5 is a graph showing temperature distribution at each depth of a substrate when unit pulses having different pulse widths are irradiated to the substrate.

[0054] Figure 12 A comparison chart of the heating rate per second and the cooling rate per second based on the heating source. DETAILED DESCRIPTION

[0055] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement the present invention. However, the present invention can be implemented in various forms and is not limited to the embodiments described herein. In addition, when describing the correct embodiments of the present invention in detail, when it is determined that the detailed description of the relevant known functions or configurations may unnecessarily obscure the key points of the present invention, the detailed description thereof will be omitted. In addition, throughout the drawings, components with similar functions and effects use the same reference numerals.

[0056] "Include" components means that it may include more other components, and does not exclude other components unless otherwise specified. Specifically, the terms "include" or "have" should be understood to specify the features, quantities, steps, operations, components or combinations thereof described in the specification, and do not exclude the existence or addition of one or more other features or quantities, steps, operations, components or combinations thereof.

[0057] Unless the context clearly implies otherwise, a singular expression includes a plural expression.In addition, the shapes and sizes of elements in the drawings may be exaggerated for clearer description.

[0058] The term "and / or" includes any one of the listed items and all combinations of one or more. In addition, in this specification, the term "connected" refers not only to the case where component A and component B are directly connected, but also to the case where component C is inserted between component A and component B to indirectly connect component A and component B.

[0059] The embodiments of the present invention can be modified in various ways, and the scope of the present invention should not be interpreted as being limited to the following embodiments. The embodiments of the present invention are provided to more fully explain the present invention to those of ordinary skill in the art. Therefore, the shapes of the elements in the drawings have been exaggerated to emphasize a clearer explanation.

[0060] Figure 1 A substrate processing apparatus according to a first embodiment of the present invention is shown. Figure 1 Give a description.

[0061] The substrate processing apparatus may include a process chamber 110, a support unit 200, a gas supply unit 400, a plasma source 300, and a heating source 500. The substrate processing apparatus processes a substrate W using plasma.

[0062] The process chamber 110 has an interior space 101 for performing a process therein. A drain hole 103 is formed on the bottom surface of the process chamber 110. The drain hole 103 is connected to a drain line 721, to which a pump 720 is mounted. Reaction byproducts generated during the process and gases remaining in the interior space 101 are discharged through the drain hole 103 by the discharge pressure applied by the pump 720. Furthermore, the interior space 101 of the process chamber 110 is depressurized to a desired pressure through the drain process. The pump 720 may be a vacuum pump.

[0063] An opening (not shown) is formed on a sidewall of the process chamber 110. The opening (not shown) may serve as a passage through which the substrate W enters and exits the process chamber 110. The opening (not shown) is opened and closed by a door assembly (not shown).

[0064] The support unit 200 is positioned at a lower area of the inner space 101. The support unit 200 may include an electrostatic chuck (ESC). The electrostatic chuck (ESC) clamps the substrate W using electrostatic force. Alternatively, the support unit 200 may support the substrate W in various ways, such as mechanical clamping.

[0065] The support unit 200 includes a dielectric plate 220 and a base plate 230. The dielectric plate 220 and the base plate 230 form the electrostatic chuck 210.

[0066] The dielectric plate 220 is positioned at the top portion of the electrostatic chuck 210. The dielectric plate 220 is provided as a disk-shaped dielectric substance. The substrate W is placed on the top surface of the dielectric plate 220. In an embodiment, the top surface of the dielectric plate 220 may have a radius smaller than that of the substrate W. Therefore, the dielectric plate 220 has a first electrode 223 embedded therein.

[0067] The first electrode 223 is electrically connected to a first power source (not shown). The first power source (not shown) includes a direct current (DC) power source. A switch (not shown) is installed between the first electrode 223 and the first power source (not shown). The first electrode 223 can be electrically connected to or disconnected from the first power source (not shown) by turning the switch (not shown) on or off. When the switch (not shown) is turned on, a DC current is applied to the first electrode 223. The DC current applied to the first electrode 223 exerts an electrostatic force between the first electrode 223 and the substrate W, and the substrate W is attracted to the dielectric plate 220 by the electrostatic force.

[0068] The base plate 230 is positioned at the bottom portion of the dielectric plate 220. The base plate 230 may include a material having high heat transfer and electrical transfer properties. In an embodiment, the base plate 230 may include a metal plate. In an embodiment, the entire base plate 230 may be made of a metal material. In an embodiment, the base plate 230 may be made of an aluminum material. The top surface of the base plate 230 may be stepped so that the central area is positioned higher than the edge area. The central area of the top surface of the base plate 230 has an area corresponding to the bottom surface of the dielectric plate 220, and the bottom surface of the dielectric plate 220 may be positioned on this area. The focus ring 250 may be positioned at the edge area of the base plate 230.

[0069] The base plate 230 includes a first circulation flow path 231 , a second circulation flow path 232 , and a second supply flow path 233 .

[0070] The first circulation flow path 231 is provided as a channel through which the heat transfer medium circulates. The first circulation flow path 231 may be formed in a spiral shape within the base plate 230. Alternatively, the first circulation flow path 231 may be arranged so that annular flow paths with different radii have the same center. Each of the first circulation flow paths 231 may be connected to each other. The first circulation flow paths 231 are formed at the same height.

[0071] The second supply flow path 233 extends upward from the first circulation flow path 231 and is provided to the top surface of the base plate 230. The second supply flow path 233 is provided in a number corresponding to the number of the first supply flow path 221 and connects the first circulation flow path 231 and the first supply flow path 221. The first circulation flow path 231 is connected to the heat transfer medium storage unit 231a through a heat transfer medium supply pipeline 231b. The heat transfer medium is stored at the heat transfer medium storage unit 231a. The heat transfer medium includes an inert gas. According to the embodiment, the heat transfer medium includes helium (He) gas. Helium is applied to the first circulation flow path 231 through the supply pipeline 231b and is supplied to the bottom of the substrate W through the second supply flow path 233 and the first supply flow path 221 in sequence. The helium serves as a medium through which the heat transferred from the plasma to the substrate W is transferred to the electrostatic chuck 210.

[0072] The second circulation flow path 232 is provided as a channel through which the cooling fluid circulates. The second circulation flow path 232 may be formed in a spiral shape within the base plate 230. Alternatively, the second circulation flow path 232 may be arranged so that annular flow paths having different radii have the same center. Each of the second circulation flow paths 232 may be connected to each other. The second circulation flow paths 232 may have a larger cross-sectional area than the first circulation flow path 231. The second circulation flow paths 232 are formed at the same height. The second circulation flow paths 232 may be located below the first circulation flow path 231.

[0073] The second circulation flow path 232 is connected to the cooling fluid storage unit 232a via a cooling fluid supply line 232c. The cooling fluid is stored in the cooling fluid storage unit 232a. A cooler 232b may be disposed within the cooling fluid storage unit 232a. The cooler 232b cools the cooling fluid to a predetermined temperature. Alternatively, the cooler 232b may be mounted on the cooling fluid supply line 232c. The cooling fluid supplied to the second circulation flow path 232 via the cooling fluid supply line 232c circulates along the second circulation flow path 232 and cools the base plate 230. As the base plate 230 is cooled, the dielectric plate 220 and the substrate W are cooled together, thereby maintaining the substrate W at a desired temperature.

[0074] The base plate 230 may be electrically connected to a first power source 271 and a second power source 272. The first power source 271 may be configured as a power source for applying relatively low-frequency power compared to the second power source 272. The second power source 272 may be configured as a power source for applying relatively high-frequency power compared to the first power source 271. The base plate 230 may function as a bottom electrode.

[0075] The insulator 240 may be disposed under the base plate 230 .

[0076] The gas supply unit 400 applies the gases required for the process to the internal space 101. The gas supply unit 400 includes a first gas supply line 411 connected to a first gas supply source 410, a second gas supply line 421 connected to a second gas supply source 420, and a third gas supply line 431 connected to a third gas supply source 430. The first gas and the second gas can be reaction gases for processing the substrate, and the third gas can be a purge gas for purging. A first valve 412 can be installed at the first gas supply line 411 to open and close the channel or adjust the flow rate of the fluid flowing through the channel. A second valve 422 can be installed at the second gas supply line 421 to open and close the channel or adjust the flow rate of the fluid flowing through the channel. A third valve 432 can be installed at the third gas supply line 431 to open and close the channel or adjust the flow rate of the fluid flowing through the channel.

[0077] The plasma source 300 generates plasma from the process gas remaining in the exhaust space. The exhaust space may correspond to the area above the support unit 200 in the process chamber 110. The plasma source 300 may include a capacitively coupled plasma source. The plasma source 300 may include a top electrode 310, a base plate 230 serving as a bottom electrode, and a high-frequency power supply 320. The top electrode 310 and the base plate 230 may be arranged to face each other in the up / down direction.

[0078] Figure 2 FIG is an enlarged view showing a portion of the cross section of the top electrode 310. Figure 2 The top electrode 310 will be further described. The top electrode 310 is configured so that light or microwaves applied from a heating source 500 to be described below can be transmitted to the substrate W without loss (or in a state where loss is minimized).

[0079] A transparent conductive film (transparent conductive oxide (TCO)) 312 is stacked and arranged at the first plate 311. The transparent conductive film 312 is arranged to have a thickness to which light or microwaves for heating the substrate W can be transmitted. In an embodiment, the transparent conductive film 312 can be indium tin oxide (ITO). In addition, the transparent conductive film 312 can be formed by any one or more of aluminum-doped zinc oxide (AZO), fluorine-doped tin dioxide (FTO), antimony-doped tin dioxide (ATO), SnO2, ZnO, IrO2, RuO2, graphene, metal nanowires, carbon nanotubes (CNT), or a mixture thereof, or multiple layers are stacked. The transparent conductive film 312 is arranged to have a first thickness or less. The first thickness is the thickness through which light or microwaves can be transmitted relative to a determined material. The first thickness varies according to the material determined as the transparent conductive film 312. In this specification, transmissibility does not significantly affect permeability. In an embodiment, when the transparent conductive film 312 is set to ITO, the first thickness can be 1 μm. The transparent conductive film 312 and the base plate 230 are combined to generate an electric field due to an RF (Radio Frequency) voltage applied to one or more of them. According to the embodiment, the transparent conductive film 312 can be grounded, and high-frequency power can be applied to the base plate 230 via the first power supply 271 and / or the second power supply 272. Alternatively, power can be applied to the transparent conductive film 312 via the high-frequency power supply 320, and the base plate 230 can be grounded. In addition, high-frequency power can be selectively applied to both the transparent conductive film 312 and the base plate 230.

[0080] The first plate 311 is formed of a material capable of transmitting light or microwaves for heating the substrate W. The first plate 311 is formed of a material having corrosion resistance. As an embodiment of the first plate 311 , quartz may be provided.

[0081] A second plate 313 may be further stacked over the transparent conductive film 312. The second plate 313 is provided as a material capable of transmitting light or microwaves for heating the substrate W. As an embodiment of the second plate 313, quartz may be provided.

[0082] The heating source 500 heats the substrate W on the support unit 200. The heating source 500 can be a flash lamp, a laser optical system, or a microwave source. The flash lamp provides a flash of light with heating energy. The laser optical system provides a laser with heating energy. The microwave source provides microwaves with heating energy. In an embodiment of the heating source 500, when a microwave source is provided, the heating source 500 can include a waveguide for applying microwaves into the chamber 100. The heating source 500 can apply microwaves with a frequency of 1 GHz to 5 GHz. According to an embodiment of the present inventive concept, since the surface of the substrate is selectively heated by microwaves, the temperature increase rate and the cooling rate are fast, and the surface of the substrate can be heated to the target temperature in a short time, thereby reducing the process time.

[0083] Each component of the substrate processing apparatus can be controlled by a controller 600. The controller 600 can control the entire operation of the substrate processing apparatus. The controller (not shown) may include a central processing unit (CPU), a read-only memory (ROM), and a random access memory (RAM). The CPU performs a desired process such as an etching process according to various schemes stored in its storage area.

[0084] In this scheme, control information for the device of the process conditions is input. At the same time, the scheme indicating these programs and processing conditions can be stored in a non-transitory computer-readable medium. A non-transitory computer-readable medium refers to a medium that stores data semi-permanently and can be read by a computer, rather than a medium that stores data for a short period of time (such as a register, buffer or memory). Specifically, the various applications or programs mentioned above can be stored and provided in a non-transitory computer-readable medium (such as a CD, DVD, hard disk, Blu-ray disc, USB, memory card or ROM, etc.).

[0085] Figures 3 to 6 The steps of sequentially etching the substrate W are described. Figure 3 It shows the state of the device when performing the adsorption process. Figure 4 It shows a state when the apparatus performs a purge process after the adsorption process. Figure 5 It shows the state of the device when performing the desorption process. Figure 6 It shows the state of the apparatus when performing a purge process after the desorption process. Figure 8 The reaction of the substrate during the adsorption process, the purge process after the adsorption process, the desorption process, and the purge process after the desorption process is shown. Figures 3 to 6 as well as Figure 8Atomic layer etching (ALE) using a substrate processing apparatus according to an embodiment of the inventive concept is described.

[0086] See also Figure 3 and Figure 8 . Figure 3 : shows the state of the device when performing the adsorption process. For the adsorption process, when the first gas is supplied to the reaction space, the first gas is excited into plasma. The plasma excited by the first gas is adsorbed on the surface of the substrate W to modulate the surface of the substrate W. The adsorption process is performed in a state where the substrate W is at a first temperature. The first temperature is the temperature at which the plasma excited by the first gas is adsorbed on the surface of the substrate W. In an embodiment, the first temperature may be approximately 20°C. Since the substrate W is processed at a certain temperature (at which the adsorption of the surface of the substrate W is maximized), the time required for the adsorption reaction can be reduced. In an embodiment, the adsorption reaction can be performed within 1 second.

[0087] See also Figure 4 and Figure 8 When the adsorption process is completed, a third gas is supplied to the inner space 101. The third gas may be nitrogen. Furthermore, the atmosphere of the inner space 101 is exhausted. The process gas and process byproducts remaining when the inner space 101 is purged are exhausted through the exhaust hole 103. The purging process may be performed within approximately 5 seconds, but is not limited thereto, and it is sufficient to perform the purging process until the remaining process gas and process byproducts are properly exhausted.

[0088] See also Figure 5 and Figure 8 . Figure 5 The apparatus is shown in the state of performing a desorption process. During the desorption process, when the second gas is supplied to the reaction space, the second gas is excited into plasma. The plasma excited by the second gas removes the surface of the modified substrate W. The surface of the substrate W is heated by the heating energy emitted from the heating source 500. The heating energy is 10 mJ / cm 2 Up to 100mJ / cm 2energy is applied to the substrate W. The heat on the bottom surface of the substrate W can be cooled by a cooling fluid (the cooling fluid flows through the second circulation flow path 232 of the support unit 200). The heating energy is applied as pulse energy. In the desorption process, the surface of the substrate W is at a second temperature. The second temperature is a temperature at which the desorption performed by the plasma excited by the second gas is maximized. In an embodiment, the second temperature may be an ideal temperature. Since the substrate W is treated at a certain temperature at which the adsorption of the surface of the substrate W is maximized, the time required for the adsorption reaction can be reduced. In an embodiment, the desorption reaction can be performed within 10 ms. The heating source 500 applies pulse energy several times to millions of times within a time of 10 milliseconds. Reference Figures 9 to 12 , heating the surface of the substrate W to 400° C. or higher by the pulse energy emitted from the heating source 500 and instantaneously cooling the surface of the substrate W will be described in more detail.

[0089] See also Figure 6 and Figure 8 When the desorption process is completed, a third gas is supplied to the inner space 101. The third gas may be nitrogen. Furthermore, the atmosphere of the inner space 101 is exhausted. The process gas and process byproducts remaining when the inner space 101 is purged are exhausted through the exhaust hole 103. The purging process may be performed within approximately 5 seconds, but is not limited thereto, and it is sufficient to perform the purging process until the remaining process gas and process byproducts are properly exhausted.

[0090] The adsorption-purge-desorption-purge process is repeated multiple times until the desired etching conditions are achieved.

[0091] Figure 7 A substrate processing apparatus according to a second embodiment of the present invention is shown. Figure 7 When describing the second embodiment, the same configuration as that of the substrate processing apparatus of the first embodiment is replaced by the description of the first embodiment.

[0092] In an embodiment, the plasma source may include a cylindrical antenna 810 and a high-frequency power supply 820. The cylindrical antenna 810 is electrically connected to the high-frequency power supply 820. When current from the high-frequency power supply 820 flows through the cylindrical antenna 810, an electromagnetic field is formed at the exhaust space. The electromagnetic field applied by the cylindrical antenna 810 excites the process gas applied to the exhaust space into plasma. A window 700 is provided at the top plate of the chamber 110. The window 700 is provided with a material capable of transmitting light or microwaves. In addition, the window 700 is provided with a corrosion-resistant material. In an embodiment, the window 700 may be provided with a quartz material. The heating source 500 is provided above the window 700.

[0093] Figure 9This is a flow chart of a substrate processing method according to an embodiment of the present inventive concept, illustrating the power of heating energy applied during the desorption process and the temperature change of the substrate surface. According to an embodiment of the present inventive concept, the time t1 required for the adsorption process is less than 1 second. The time t3 required for the desorption process is less than 10 milliseconds.

[0094] The surface of the substrate W is heated by the heating source 500. The heating source 500 applies heating energy in pulses. In the embodiment, three pulses of energy are shown. However, this is shown for the purpose of description and can be set differently depending on the size and type of energy applied. The pulse width can be set to the level of picoseconds (ps) to milliseconds (ms).

[0095] The bottom surface of the substrate W is cooled by the support unit 200. Since only a surface separated from the substrate W is heated when the bottom surface of the substrate W is cooled, the substrate W may be prevented from being cracked due to a high temperature process.

[0096] Figure 10 The figure shows the temperature curve of the heating degree at each depth of the substrate W when pulse energy is applied. This is the result of using a laser with a wavelength of 308nm and a pulse duration of 200ns. When pulse energy is applied, the surface of the substrate can be heated rapidly in a short time.

[0097] Figure 11 FIG is a diagram showing the temperature distribution at each depth of a substrate when unit pulses with different pulse widths are irradiated to the substrate. Figure 11 , it can be seen that if picosecond (psec) is applied and if nanosecond (nsec) is applied, the area within a depth of 100 μm will be heated, while the area deeper than 100 μm will not be heated. According to an embodiment of the present inventive concept, the substrate W is heated by applying heating energy in a pulse form (the pulse form has a pulse width of picoseconds (psec) or nanoseconds (nsec)) from the top of the substrate W to a depth within 100 μm. In the embodiment, when heating energy with a pulse width of microseconds (micro-sec) or milliseconds (msec) is applied, the heating energy is heated from 200 μm to approximately 100°C, but the temperature for each depth of the substrate is controlled by using a cooling system of the substrate support unit.

[0098] Figure 12: is a comparison diagram of the heating rate per second and the cooling rate per second according to the heating source. Flash, μs laser, ns laser and ps laser have excellent heating capacity per second, and the time required for cooling is short. Although not shown in the figure, since the wavelength of microwaves is much longer than the thickness and spacing of the metal wiring layer of the semiconductor chip, the depth of microwave penetration into the metal material is less than a few microns (μm). According to the embodiment, the surface or mold of the substrate is heated by microwave heat treatment, so that the surface temperature can be quickly increased to the target temperature and cooling can be performed. According to the embodiment of the present invention, flash, laser or microwave can be applied as heating energy.

[0099] According to embodiments of the present invention, the temperature of the desorption process can be controlled at the level of picoseconds (ps) to milliseconds (ms). In addition, a high-speed t-ALE (isotropic atomic layer etching) process is possible that shortens the desorption process time to the level of picoseconds (ps) to several milliseconds (ms).

[0100] According to embodiments of the present inventive concept, rapid temperature increase can be achieved. In addition, since the wafer W is supported by the support unit 200 and its bottom surface can be cooled by the cooling fluid, the wafer W can be prevented from cracking despite the process using high temperature.

[0101] According to the embodiments of the present invention, the temperature can be controlled at a high temperature in a short time, thereby broadening the selection range of precursors. That is, precursors requiring higher reaction temperatures can be used. In addition, by-products with higher boiling points can be easily removed.

[0102] Embodiments of the inventive concept may be applied to both anisotropic ALE and isotropic ALE.

[0103] Effects of the present inventive concept are not limited to the above-mentioned effects, and those skilled in the art in the technical field to which the present inventive concept pertains can clearly understand unmentioned effects from the specification and the accompanying drawings.

[0104] Although preferred embodiments of the present invention have been illustrated and described so far, the present invention is not limited to the specific embodiments described above, and it should be noted that a person skilled in the art can implement the present invention in various ways without departing from the essence of the present invention as claimed in the claims, and modifications should not be interpreted separately from the technical spirit or prospects of the present invention.

Claims

1. A substrate processing device, comprising: a chamber providing a processing space; a supporting unit configured to support the substrate at the processing space; a gas supply unit configured to introduce a gas into the processing space; a plasma source configured to provide energy for exciting a gas introduced into the processing space into plasma; an exhaust unit configured to exhaust the atmosphere in the processing space to an outside of the processing space; as well as a heating source positioned above the support unit, and wherein the heating source applies heating energy to the substrate in a pulsed form; Wherein, the plasma source comprises: a top electrode including a first plate transmitting light or microwaves and a transparent conductive film stacked at the first plate; a bottom electrode disposed below the substrate; and a high-frequency power supply that applies high-frequency power to at least one of the top electrode or the bottom electrode, and Wherein, the heating source is arranged above the top electrode; The substrate processing apparatus further includes a controller, and The controller is configured to execute: The first step is to control the gas supply unit to introduce a first process gas into the processing space, and control the plasma source to excite the introduced first process gas into plasma to process the substrate; The second step is to control the gas supply unit to introduce the purge gas into the processing space, and control the exhaust unit to exhaust the processing space; a third step of controlling the gas supply unit to introduce a second process gas into the processing space, controlling the plasma source to excite the introduced second process gas into the plasma, and controlling the heating source to apply the heating energy in pulses to process the substrate; and The fourth step is to control the gas supply unit to introduce the purge gas into the processing space, and control the exhaust unit to exhaust the processing space, and The first step to the fourth step are controlled to be repeated multiple times in sequence.

2. The substrate processing apparatus according to claim 1, wherein: The pulse width of the pulse is from picoseconds to milliseconds.

3. The substrate processing apparatus according to claim 1, wherein: The heating source applies the pulse several times to millions of times within 10 milliseconds.

4. The substrate processing apparatus according to claim 1, wherein: The heating energy heats the substrate to 400° C. or higher.

5. The substrate processing apparatus according to claim 1, wherein: The heating energy is 10 mJ / cm 2 or higher energy is applied to the substrate.

6. The substrate processing apparatus according to claim 2, wherein: The heating energy is 10 mJ / cm 2 Up to 100mJ / cm 2 The energy is applied to the substrate.

7. The substrate processing apparatus according to claim 1, wherein: The heating source is a flash lamp, a laser optical system or a microwave generator.

8. The substrate processing apparatus according to claim 1, wherein: The support unit includes a plate in which a flow path through which a cooling fluid flows is formed.

9. The substrate processing apparatus according to claim 8, wherein: The support unit includes a plate in which a flow path through which a cooling fluid flows is formed, and The controller is configured to control the cooling fluid to flow at the flow path of the plate in the third step.

10. A substrate processing method for a substrate processing apparatus according to any one of claims 1 to 9, the substrate processing method comprising: Introducing a first process gas into a processing space and exciting the introduced first process gas into plasma to process a substrate as a first step; introducing a purge gas into the processing space and exhausting the processing space as a second step; introducing a second process gas into the processing space, exciting the introduced second process gas into plasma, and applying heating energy in pulses as a third step; as well as applying the purge gas to the process space and exhausting the process space as a fourth step, and The first step to the fourth step are repeated multiple times in sequence.

11. The substrate processing method according to claim 10, wherein: The pulse width of the pulse is from picoseconds to milliseconds.

12. The substrate processing method according to claim 10, wherein: The heating energy is applied in pulses ranging from several times to millions of times within 10 milliseconds.

13. The substrate processing method according to claim 10, wherein: The heating energy heats the substrate to 400° C. or higher.

14. The substrate processing method according to claim 10, wherein: The heating energy is 10 mJ / cm 2 or higher energy is applied to the substrate.

15. The substrate processing method according to claim 10, wherein: The heating energy is 10 mJ / cm 2 Up to 100mJ / cm 2 The energy is applied to the substrate.

16. The substrate processing method according to claim 10, wherein: The heating energy is flash, laser or microwave.

17. The substrate processing method according to claim 10, wherein: The bottom surface of the substrate is cooled in the third step.

18. A substrate processing apparatus, comprising: a chamber providing a processing space; a support unit that supports the substrate at the processing space, and includes a plate in which a flow path through which a cooling fluid flows is formed; a gas supply unit configured to introduce a gas into the processing space; a plasma source configured to provide energy for exciting a gas introduced into the processing space into plasma; an exhaust unit configured to exhaust the atmosphere in the processing space to the outside of the processing space; and a heating source positioned above the support unit, wherein the heating source is configured as any one of a flash lamp, a laser optical system, or a microwave generator, and Wherein, the plasma source comprises: a top electrode including a first plate transmitting light or microwaves and a transparent conductive film stacked at the first plate; a bottom electrode disposed below the substrate; and a high-frequency power supply that applies high-frequency power to at least one of the top electrode or the bottom electrode, and Wherein, the heating source is arranged above the top electrode, and 10mJ / cm 2 Up to 100mJ / cm 2 Pulsed heating energy is applied to the substrate, and Applying the pulse several to several hundred times within 1 millisecond; Wherein, the substrate processing device also includes a controller, and wherein the controller is configured to perform: a first step, the first step is to control the gas supply unit to introduce a first process gas into the processing space, and control the plasma source to excite the first process gas that has been introduced into plasma to process the substrate; a second step, the second step is to control the gas supply unit to introduce a purge gas into the processing space, and control the exhaust unit to exhaust the processing space; a third step, the third step is to control the gas supply unit to introduce a second process gas into the processing space, control the plasma source to excite the second process gas that has been introduced into the plasma, and control the heating source to apply the heating energy in pulses to process the substrate; and a fourth step, the fourth step is to control the gas supply unit to introduce the purge gas into the processing space, and control the exhaust unit to exhaust the processing space, and wherein the first step to the fourth step are controlled to be repeated multiple times in sequence.

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