Mask set, method for manufacturing organic device, and organic device

Abstract

The present application relates to a mask set, a manufacturing method of an organic device, and an organic device. The mask set can have two or more masks. When observed in a cross section along a normal direction, a region demarcation straight line can be defined as a straight line passing through a connection portion of a through-hole and forming an angle θ with a first surface. The region demarcation straight line can intersect the first surface at a first intersection point. An effective region can be demarcated on an inner side closer to the through-hole than the first intersection point, and a surrounding region can be demarcated on an outer side closer to the through-hole than the first intersection point. The angle θ can be 35° or more and 70° or less. A through region in a mask second region can include a hole overlap region in which through-holes of the two masks overlap. The hole overlap region can include a first hole overlap region in which surrounding regions of the through-holes of the two masks included in the mask stack overlap.

Description

Technical Field

[0001] Embodiments of the present invention relate to mask assemblies, methods for manufacturing organic devices, and organic devices. Background Technology

[0002] In recent years, the market has demanded high-resolution display devices in electronic devices such as smartphones and tablets. These display devices typically have pixel densities of 400ppi or higher, or even 800ppi or higher.

[0003] Organic EL display devices have attracted attention due to their good responsiveness and / or low power consumption. As a method for forming pixels in an organic EL display device, a method is known to attach the pixel material to a substrate by vapor deposition. For example, first, a substrate with an anode formed in a pattern corresponding to the element is prepared. Next, an organic material is attached to the anode through through-holes in a mask, thereby forming an organic layer on the anode. Then, a conductive material is attached to the organic layer through through-holes in the mask, thereby forming a cathode on the organic layer.

[0004] Cathodes are sometimes formed using a vapor deposition method with multiple masks. In this case, the layers constituting the cathode are formed using each mask, creating overlapping electrode regions where adjacent layers overlap. Thus, the layers are electrically connected.

[0005] Existing technical documents

[0006] Patent documents

[0007] Patent Document 1: Japanese Patent Application Publication No. 2019-060028

[0008] Patent Document 2: Japanese Patent Application Publication No. 2005-183153 Summary of the Invention

[0009] The problem that the invention aims to solve

[0010] If the thickness of the overlapping region of the cathode electrodes increases, the light transmittance decreases.

[0011] Methods for solving problems

[0012] One embodiment of the present invention provides a mask assembly comprising two or more masks. Each mask may have a shielding region and a through-hole. A mask stack formed by overlapping two or more masks may have a through-hole that overlaps with the through-hole when viewed along the normal direction of the mask. When viewed along the normal direction of the mask, the mask stack may include: a first mask region comprising the through-hole having a first aperture ratio; and a second mask region comprising the through-hole having a second aperture ratio less than the first aperture ratio. Each mask may include a first surface and a second surface located on the side opposite to the first surface. The through-hole may include a first recess located on the side of the first surface, a second recess located on the side of the second surface, and a connecting portion connecting the first recess and the second recess. When viewed using a cross-section along the normal direction, the region delineation line may be defined as a straight line passing through the connecting portion and forming an angle θ with the first surface. The straight line delineating the aforementioned region may intersect the first surface at the first intersection point. An effective region may be delineated closer to the inner side of the through-hole than the first intersection point, and a surrounding region may be delineated closer to the outer side of the through-hole than the first intersection point. The angle θ may be 35° or higher and 70° or lower. The through-hole region in the second region of the mask may include the overlapping hole region of the through-holes of the two masks. The overlapping hole region may include the first overlapping hole region of the surrounding regions of the through-holes of the two masks included in the mask laminate.

[0013] The effects of the invention

[0014] According to one embodiment of the present invention, the light transmittance can be improved. Attached Figure Description

[0015] Figure 1 This is a top view illustrating an example of an organic device according to one embodiment of the present invention.

[0016] Figure 2 This is a top view showing the second display area of ​​the organic device.

[0017] Figure 3 This is a top view showing the second electrode of the organic device.

[0018] Figure 4 It shows from Figure 3 The diagram shows a top view of the organic device after the second electrode has been removed.

[0019] Figure 5 It is schematically along Figure 3 The cross-sectional view of the AA line of the organic device shown.

[0020] Figure 6 It is schematically along Figure 3 The cross-sectional view of the BB line of the organic device shown.

[0021] Figure 7 It is shown Figure 3 A top view of the electrode overlap region of the second electrode shown.

[0022] Figure 8 It is shown Figure 7 The cross-sectional view of the electrode overlap region is shown.

[0023] Figure 9 This is a cross-sectional view showing a comparative example of the electrode overlap region.

[0024] Figure 10 This is a diagram showing an example of a vapor deposition apparatus equipped with a mask device.

[0025] Figure 11 This is a top view showing an example of a mask assembly.

[0026] Figure 12 This is a top view showing the mask assembly.

[0027] Figure 13A This is a top view showing the first mask assembly.

[0028] Figure 13B This is a top view showing the second mask assembly.

[0029] Figure 13C This is a diagram showing the third mask assembly.

[0030] Figure 14 This is a cross-sectional view showing an example of the cross-sectional structure of a mask.

[0031] Figure 15 It is a cross-sectional view showing the effective area and surrounding area of ​​the through hole.

[0032] Figure 16 It shows the method used to form Figure 3 A top view of an example of the first mask for the second electrode shown.

[0033] Figure 17 It shows the method used to form Figure 3 A top view of an example of the second mask for the second electrode shown.

[0034] Figure 18 It shows the method used to form Figure 3 A top view of an example of the third mask for the second electrode shown.

[0035] Figure 19 It shows the method used to form Figure 3 A top view of an example of the mask layer of the second electrode shown.

[0036] Figure 20 It is shown Figure 19 A top view of the overlapping area of ​​the holes in the mask layer shown.

[0037] Figure 21 It is shown Figure 20 The cross-sectional view of the overlapping area of ​​the holes is shown.

[0038] Figure 22 It is shown Figure 3 A top view of a modified example of the second electrode shown.

[0039] Figure 23 It is shown Figure 22 A top view of the electrode overlap region of the second electrode shown.

[0040] Figure 24 It is shown Figure 23 The cross-sectional view of the electrode overlap region is shown.

[0041] Figure 25 It shows the method used to form Figure 22 A top view of the hole overlap region of the mask laminate for the second electrode.

[0042] Figure 26 It is shown Figure 25 The cross-sectional view of the overlapping area of ​​the holes is shown.

[0043] Figure 27 It is shown Figure 15 Cross-sectional view of the effective area and the surrounding area of ​​the through hole as shown.

[0044] Figure 28 It is shown Figure 3 A top view of a modified example of the second electrode shown.

[0045] Figure 29 It is shown Figure 28 A top view of the electrode overlap region of the second electrode shown.

[0046] Figure 30 It shows the method used to form Figure 28 A top view of an example of the first mask for the second electrode shown.

[0047] Figure 31 It shows the method used to form Figure 28 A top view of an example of the second mask for the second electrode shown.

[0048] Figure 32 It shows the method used to form Figure 28 A top view of the hole overlap region of the mask laminate for the second electrode.

[0049] Figure 33 It is shown Figure 32 A top view of the overlapping area of ​​the holes in the mask layer shown. Detailed Implementation

[0050] In this specification and accompanying drawings, unless otherwise specified, the terms “substrate,” “material,” “plate,” “sheet,” or “film,” etc., which refer to the material that forms the basis of a structure, are not distinguished from each other merely based on different names.

[0051] In this specification and accompanying drawings, unless otherwise specified, terms such as “parallel”, “orthogonal”, or values ​​of length and angle that define shape, geometric conditions, and their degree are not limited to their strict meaning, but are interpreted to include the range of degrees to which the same function can be expected.

[0052] In this specification and accompanying drawings, unless otherwise specified, the terms "above" or "below," "on the upper side" or "on the lower side," or "above" or "below" refer to situations where a component or region is in direct contact with other structures. This also includes situations where one structure is indirectly in contact with another structure, where another structure is involved between them. Furthermore, unless otherwise specified, the vertical direction in terms such as "above," "on the upper side," "above," "below," "below," or "below" can be reversed.

[0053] In this specification and accompanying drawings, unless otherwise specified, the same or similar reference numerals are used to denote the same part or parts with the same function, and sometimes repeated descriptions are omitted. Additionally, for ease of explanation, the dimensions in the drawings may differ from the actual scale, and sometimes a part of the structure may be omitted from the drawings.

[0054] In this specification and accompanying drawings, unless otherwise specified, embodiments of the present invention may be combined with other embodiments or modifications without contradiction. Furthermore, other embodiments may be combined with each other, or with other embodiments and modifications, without contradiction. Additionally, modifications may also be combined with each other without contradiction.

[0055] In this specification and accompanying drawings, unless otherwise specified, when multiple steps are disclosed in a manufacturing method or other similar process, other undisclosed steps may be performed between the disclosed steps. Furthermore, the order of the disclosed steps is arbitrary as long as it does not create contradictions.

[0056] In this specification and accompanying drawings, unless otherwise specified, the range indicated by the symbol "~" includes the numerical values ​​or elements placed before and after the symbol "~". For example, the numerical range defined by the expression "34 to 38% by mass" is the same as the numerical range defined by the expression "more than 34% by mass and less than 38% by mass". For example, the range defined by the expression "mask 50A to 50C" includes masks 50A, 50B, and 50C.

[0057] In one embodiment of this specification, an example is described where a mask set comprising multiple masks is used to form electrodes on a substrate during the manufacture of an organic EL display device. However, the application of the mask set is not particularly limited, and this embodiment can be applied to mask sets used for various purposes. For example, the mask set of this embodiment can be used to form electrodes for devices used to display or project images or videos representing virtual reality (so-called VR) or augmented reality (so-called AR). Furthermore, the mask set of this embodiment can also be used to form electrodes for display devices other than organic EL display devices, such as electrodes for liquid crystal display devices. Additionally, the mask set of this embodiment can also be used to form electrodes for organic devices other than display devices, such as electrodes for pressure sensors.

[0058] The first aspect of the present invention relates to a mask assembly having two or more masks.

[0059] The aforementioned mask has a shielding area and a through hole.

[0060] A mask laminate formed by overlapping two or more of the above-mentioned masks has a through region that overlaps with the through hole when viewed along the normal direction of the above-mentioned mask.

[0061] When viewed along the normal direction of the mask, the mask stack comprises: a first mask region including the through region having a first aperture ratio; and a second mask region including the through region having a second aperture ratio less than the first aperture ratio.

[0062] The aforementioned mask includes a first surface and a second surface located on the opposite side of the first surface.

[0063] The aforementioned through hole includes a first recess located on the first surface side, a second recess located on the second surface side, and a connecting portion connecting the first recess and the second recess.

[0064] When observing a section along the aforementioned normal direction, the region delineation line is defined as a straight line passing through the aforementioned connecting portion and forming an angle θ with the aforementioned first surface. The region delineation line intersects the aforementioned first surface at a first intersection point. An effective region is delineated at a location closer to the inside of the aforementioned through hole than at the aforementioned first intersection point, and a surrounding region is delineated at a location closer to the outside of the aforementioned through hole than at the aforementioned first intersection point.

[0065] The angle θ mentioned above is between 35° and 70°.

[0066] The through-area in the second region of the aforementioned mask includes the overlapping area of ​​the through holes of the two aforementioned masks.

[0067] The aforementioned hole overlap region includes the first hole overlap region, which is the area surrounding the aforementioned through holes of the two aforementioned masks contained in the aforementioned mask laminate.

[0068] In the second aspect of the present invention, in the mask group of the first aspect, the overlapping area of ​​the first hole can be spaced apart from the effective area of ​​the through hole of the mask.

[0069] In the third aspect of the present invention, in the mask group of the first aspect, the hole overlap region may include a second hole overlap region in which the effective region of the through hole of one of the masks included in the mask laminate overlaps with the surrounding region of the through hole of another mask.

[0070] In the fourth aspect of the present invention, in each of the mask groups of the first to third aspects, the straight line delineating the region can connect with any point on the wall surface of the second recess.

[0071] In the fifth aspect of the present invention, in each of the mask groups of the first to fourth aspects, in each region of the first region and the second region of the mask, two or more of the through holes may be located in the mask.

[0072] In a sixth aspect of the present invention, a method for manufacturing an organic device is provided, which may include a second electrode formation step: forming a second electrode on an organic layer on a first electrode on a substrate using each of the mask sets described in the first to fifth aspects. The second electrode formation step may include: a step of forming a first layer of the second electrode using a vapor deposition method with the aforementioned masks; and a step of forming a second layer of the second electrode using a vapor deposition method with other of the aforementioned masks.

[0073] In the seventh aspect of the present invention, in the manufacturing method of the organic device of the sixth aspect described above, the angle formed by the incoming direction of the vapor-deposited material forming the second electrode and the first surface of the mask can be set as θ1. The angle formed by the straight line passing through the connecting portion and connecting with the second recess and the first surface can be set as θ2. When the angle θ1 is greater than the angle θ2, the angle θ of the straight line delineating the region can be the angle θ1.

[0074] The eighth aspect of the present invention relates to an organic device comprising:

[0075] substrate;

[0076] The first electrode is located on the aforementioned substrate;

[0077] The organic layer located on the first electrode mentioned above; and

[0078] The second electrode is located on the aforementioned organic layer.

[0079] When viewed along the normal direction of the substrate, the organic device includes: a first display area comprising the second electrode having a first occupancy; and a second display area comprising the second electrode having a second occupancy less than the first occupancy.

[0080] The second electrode described above comprises two or more layers that are distinct from each other and located on the organic layer.

[0081] The aforementioned layer includes a main layer region and a surrounding layer region having a thickness thinner than the main layer region.

[0082] The second electrode in the second display area includes two overlapping electrode areas of the aforementioned layers.

[0083] The aforementioned electrode overlap region includes: a first electrode overlap region where the aforementioned layer's surrounding area overlaps; and a second electrode overlap region where the aforementioned layer's main body region of one of the aforementioned layers overlaps with the aforementioned layer's surrounding area of ​​another of the aforementioned layers.

[0084] Referring to the accompanying drawings, one embodiment of the present invention will be described in detail. It should be noted that the embodiments shown below are examples of embodiments of the present invention, and the present invention is not limited to these embodiments.

[0085] The organic device 100 will be described. The organic device 100 includes electrodes formed by using the mask assembly of this embodiment. Figure 1 This is a top view showing an example of the organic device 100 when viewed along the normal direction of the substrate 110 of the organic device 100. In the following description, the view viewed along the normal direction of the surface of the substrate or other base material is also referred to as a top view.

[0086] Organic device 100 includes substrate 110 (see reference) Figure 5 And a plurality of elements 115 arranged along a first surface 111 or a second surface 112 of the substrate 110. Elements 115 are, for example, pixels. Figure 1 As shown, in a top view, the organic device 100 may include a first display area 101 and a second display area 102. The second display area 102 may have a smaller area than the first display area 101. Figure 1 As shown, the second display area 102 can be surrounded by the first display area 101. Although not shown, a portion of the outer edge of the second display area 102 may also be on the same straight line as a portion of the outer edge of the first display area 101.

[0087] Figure 2 It is Figure 1 The second display area 102 and its surrounding area are shown in an enlarged top view. In the first display area 101, the elements 115 can also be arranged along two different directions. Figure 1 and Figure 2 In the example shown, two or more elements 115 in the first display area 101 can also be arranged along the first element direction G1. The two or more elements 115 in the first display area 101 can also be arranged along the second element direction G2, which intersects the first element direction G1. The second element direction G2 can also be perpendicular to the first element direction G1.

[0088] The organic device 100 includes a second electrode 140. The second electrode 140 is located on the organic layer 130, which will be described later. The second electrode 140 can be electrically connected to two or more organic layers 130. For example, the second electrode 140 can overlap with two or more organic layers 130 when viewed from above. The second electrode 140 located in the first display area 101 is also referred to as the second electrode 140X. The second electrode 140 located in the second display area 102 is also referred to as the second electrode 140Y.

[0089] The second electrode 140X has a first occupancy rate. The first occupancy rate is calculated by dividing the total area of ​​the second electrodes 140 located in the first display area 101 by the area of ​​the first display area 101. The second electrode 140Y has a second occupancy rate. The second occupancy rate is calculated by dividing the total area of ​​the second electrodes 140 located in the second display area 102 by the area of ​​the second display area 102. The second occupancy rate can be less than the first occupancy rate. For example, as... Figure 2 As shown, the second display area 102 may include a non-transmissive area 103 and a transmissive area 104. The transmissive area 104 does not overlap with the second electrode 140Y when viewed from above. The non-transmissive area 103 overlaps with the second electrode 140Y when viewed from above.

[0090] The first occupancy rate can be greater than 0% and less than 100%. In this case, the first display area 101 includes: an area occupied by any one of the first layer 140A to the third layer 140C of the second electrode 140 (described later); and an area not occupied by any one of the first layer 140A to the third layer 140C. However, it is not limited to this, and the first occupancy rate can be 100%. In this case, the entire first display area 101 is occupied by any one of the first layer 140A to the third layer 140C of the second electrode 140. The second occupancy rate can be greater than 0% and less than 100%. In this case, the second display area 102 includes: an area occupied by any one of the first layer 140A to the third layer 140C of the second electrode 140; and an area not occupied by any one of the first layer 140A to the third layer 140C.

[0091] The ratio of the second market share to the first market share can be, for example, 0.2 or higher, 0.3 or higher, or 0.4 or higher. The ratio of the second market share to the first market share can be, for example, 0.6 or lower, 0.7 or lower, or 0.8 or lower. The range of the ratio of the second market share to the first market share can be defined by a first group consisting of 0.2, 0.3, and 0.4 and / or a second group consisting of 0.6, 0.7, and 0.8. The range of the ratio of the second market share to the first market share can be defined by a combination of any one value from the first group and any one value from the second group. The range of the ratio of the second market share to the first market share can be defined by a combination of any two values ​​from the first group. The range of the ratio of the second market share to the first market share can be defined by a combination of any two values ​​from the second group. For example, it can be 0.2 or higher than 0.8, 0.2 or higher than 0.7, 0.2 or higher than 0.6, 0.2 or higher than 0.4, 0.2 or higher than 0.3, 0.3 or higher than 0.8, 0.3 or higher than 0.7, 0.3 or higher than 0.6, 0.3 or higher than 0.4, 0.4 or higher than 0.8, 0.4 or higher than 0.7, 0.4 or higher than 0.6, 0.6 or higher than 0.8, 0.6 or higher than 0.7, or 0.7 or higher than 0.8.

[0092] The transmittance of the non-transmissive region 103 is referred to as the first transmittance. The transmittance of the transmissive region 104 is referred to as the second transmittance. Since the transmissive region 104 does not contain the second electrode 140Y, the second transmittance is higher than the first transmittance. Therefore, in the second display region 102 including the transmissive region 104, light reaching the organic device 100 can pass through the transmissive region 104 and reach optical components on the back side of the substrate 110. Optical components are, for example, cameras, which perform certain functions by detecting light. Since the second display region 102 includes the non-transmissive region 103, when the element 115 is a pixel, an image can be displayed in the second display region 102. Thus, the second display region 102 can detect light and display images. The function of the second display region 102, which is realized by detecting light, is, for example, a camera, a fingerprint sensor, a face recognition sensor, etc. The higher the second transmittance of the transmissive region 104, the more light the sensor can receive. The lower the occupancy of the second display area 102, the more light the sensor can receive.

[0093] When either the dimension of the non-transmittent region 103 in the first direction G1 and the second direction G2 of the element, or the dimension of the transmissive region 104 in the first direction G1 and the second direction G2 of the element, is 1 mm or less, the first transmittance and the second transmittance can be measured using a microspectrophotometer. As a microspectrophotometer, either the OSP-SP200 manufactured by Olympus Corporation or the LCF series manufactured by Otsuka Electronics Co., Ltd. can be used. Any microspectrophotometer can measure transmittance in the visible light region from 380 nm to 780 nm. Quartz, borosilicate glass for TFT liquid crystals, or alkali-free glass for TFT liquid crystals can be used as a reference. The measurement results at 550 nm can be used as the first transmittance and the second transmittance.

[0094] When the dimensions of the non-transmissive region 103 in both the first direction G1 and the second direction G2 of the element, and the dimensions of the transmissive region 104 in both the first direction G1 and the second direction G2 of the element, are both greater than 1 mm, the first transmittance and the second transmittance can be measured using a spectrophotometer. As the spectrophotometer, either the UV-2600i or UV-3600i Plus UV-Vis spectrophotometer manufactured by Shimadzu Corporation can be used. By installing a small beam aperture unit on the spectrophotometer, the transmittance of a region with a maximum size of 1 mm can be measured. Atmosphere can be used as a reference. The measurement results at 550 nm can be used as the first transmittance and the second transmittance.

[0095] The ratio of the second transmittance TR2 to the first transmittance TR1, TR2 / TR1, can be, for example, 1.2 or more, 1.5 or more, or 1.8 or more. TR2 / TR1 can, for example, be 2 or less, 3 or less, or 4 or less. The range of TR2 / TR1 can be defined by a first group consisting of 1.2, 1.5, and 1.8 and / or a second group consisting of 2, 3, and 4. The range of TR2 / TR1 can be defined by a combination of any one value from the first group and any one value from the second group. The range of TR2 / TR1 can be defined by a combination of any two values ​​from the first group. The range of TR2 / TR1 can be defined by a combination of any two values ​​from the second group. For example, it can be 1.2 or higher than 4, 1.2 or higher than 3, 1.2 or higher than 2, 1.2 or higher than 1.8, 1.2 or higher than 1.5, 1.5 or higher than 4, 1.5 or higher than 3, 1.5 or higher than 2, 1.5 or higher than 1.8, 1.8 or higher than 4, 1.8 or higher than 3, 1.8 or higher than 2, 2 or higher than 4, 2 or higher than 3, or 3 or higher than 4.

[0096] like Figure 2 As shown, the second electrode 140Y may include two or more electrode lines 140L arranged in the first direction G1 of the element. The electrode lines 140L may extend in the second direction G2 of the element. For example, the electrode line 140L may include a first end 140L1 and a second end 140L2 connected to the second electrode 140X of the first display area 101. The second end 140L2 is located on the side opposite to the first end 140L1 in the second direction G2 of the element. Although not shown, if a portion of the outer edge of the second display area 102 is on the same straight line as a portion of the outer edge of the first display area 101, the electrode line 140L connected to the second electrode 140X may have only one end.

[0097] Figure 3 This is a top view showing the second electrode 140X of the first display area 101 and the second electrode 140Y of the second display area 102 enlarged. Both the second electrode 140X and the second electrode 140Y can overlap with the organic layer 130 when viewed from above. The organic layer 130 is a component of the element 115.

[0098] In the first display area 101, the organic layer 130 can be positioned along the first direction G1 of the element at a first spacing P1 (refer to...). Figure 4The organic layer 130 is arranged along the first direction G1 of the element at a second spacing P2. The second spacing P2 can be larger than the first spacing P1. As a result, the second occupancy of the second electrode 140Y becomes smaller. As a result, the area of ​​the transmission region 104 becomes larger, which increases the amount of light received by the sensor.

[0099] The ratio of the second spacing P2 to the first spacing P1 can be, for example, 1.1 or more, 1.3 or more, or 1.5 or more. The ratio of the second spacing P2 to the first spacing P1 can be, for example, 2.0 or less, 3.0 or less, or 4.0 or less. The range of the ratio of the second spacing P2 to the first spacing P1 can be defined by a first group consisting of 1.1, 1.3, and 1.5 and / or a second group consisting of 2.0, 3.0, and 4.0. The range of the ratio of the second spacing P2 to the first spacing P1 can be defined by a combination of any one value from the first group and any one value from the second group. The range of the ratio of the second spacing P2 to the first spacing P1 can be defined by a combination of any two values ​​from the first group. The range of the ratio of the second spacing P2 to the first spacing P1 can be defined by a combination of any two values ​​from the second group. For example, the pixel density can be 1.1 or higher than 4.0 or lower, 1.1 or higher than 3.0 or lower, 1.1 or higher than 2.0 or lower, 1.1 or higher than 1.5 or lower, 1.1 or higher than 1.3 or lower, 1.3 or higher than 4.0 or lower, 1.3 or higher than 3.0 or lower, 1.3 or higher than 2.0 or lower, 1.3 or higher than 1.5 or lower, 1.5 or higher than 4.0 or lower, 1.5 or higher than 3.0 or lower, 1.5 or higher than 2.0 or lower, 2.0 or higher than 4.0 or lower, 2.0 or higher than 3.0 or lower, or 3.0 or higher than 4.0 or lower. When the ratio of the second pitch P2 to the first pitch P1 is small, the difference between the pixel density of the second display area 102 and the pixel density of the first display area 101 becomes smaller. Therefore, it is possible to suppress visual differences between the first display area 101 and the second display area 102.

[0100] The electrode line 140L can overlap with two or more organic layers 130 arranged along the second direction G2 of the element when viewed from above.

[0101] The layer structure of the second electrode 140 is described.

[0102] The second electrode 140 may comprise multiple layers. For example, the second electrode 140 may comprise a first layer 140A, a second layer 140B, and a third layer 140C. The first layer 140A, the second layer 140B, and the third layer 140C are each formed by vapor deposition. More specifically, the first layer 140A is formed by vapor deposition using a first mask 50A. The second layer 140B is formed by vapor deposition using a second mask 50B. The third layer 140C is formed by vapor deposition using a third mask 50C.

[0103] like Figure 7 and Figure 8 As shown, each layer 140A to 140C of the second electrode 140 includes a main layer region 141 and a surrounding layer region 142.

[0104] The main layer region 141, when viewed from above, is located in the center of the layer and is an area that is difficult to be affected by shadows as described later. The main layer region 141 has a greater thickness than the surrounding region 142. The main layer region 141 can be formed relatively flat. The main layer region 141 can be defined by the effective region 57 of the through-hole 53, as described later.

[0105] The surrounding region 142 is located outside and around the main body region 141. The surrounding region 142 is an area susceptible to shading. The surrounding region 142 has a thinner thickness than the main body region 141. The surrounding region 142 can be an area with varying thickness. The surrounding region 142 can be defined by the surrounding region 58 of the through-hole 53 (described later).

[0106] The surrounding region 142 can be a region with a thickness of less than 95% of the thickness ta of the main body region 141. That is, the thickness of the surrounding region 142 can vary within a range of less than 95% of the thickness ta of the main body region 141. For example, the percentage of thickness relative to thickness ta can be less than 80% or less than 50%.

[0107] The layers 140A-140C of the second electrode 140, when viewed from above, may have a generally polygonal or generally circular outline. For example, each layer may have a generally quadrilateral, generally hexagonal, or generally octagonal outline. Figure 3 In the example shown, each layer 140A to 140C has a roughly octagonal outline. Each layer 140A to 140C can have the same planar outline. Two opposing edges run along the first direction G1 of the element, and the other two opposing edges run along the second direction G2 of the element. When the outline of each layer 140A to 140C is a roughly polygonal shape, the four corners of the outline can be curved.

[0108] The first layer 140A may be connected to the second layer 140B and the third layer 140C in the first direction G1 and the second direction G2 of the element. The first layer 140A may overlap with the organic layer 130 when viewed from above. For example, the first layer 140A may overlap with the first organic layer 130A described later. The first layer 140A may be located on an organic layer 130 that is different from the second layer 140B and the third layer 140C.

[0109] The second layer 140B can be connected to the first layer 140A and the third layer 140C in the first direction G1 and the second direction G2 of the element. The second layer 140B can overlap with the organic layer 130 when viewed from above. For example, the second layer 140B can overlap with the second organic layer 130B described later. The second layer 140B can be located on an organic layer 130 that is different from the first layer 140A and the third layer 140C.

[0110] The third layer 140C may be connected to the first layer 140A and the second layer 140B in the first direction G1 and the second direction G2 of the element. The third layer 140C may overlap with the organic layer 130 when viewed from above. For example, the third layer 140C may overlap with the third organic layer 130C described later. The third layer 140C may be located on an organic layer 130 that is different from the first layer 140A and the second layer 140B.

[0111] In the first display area 101, the first layer 140A, the second layer 140B, and the third layer 140C can be repeatedly arranged along the first component direction G1 and the second component direction G2. Figure 3 In the example shown, the first layer 140A, the second layer 140B, and the third layer 140C are positioned at the vertices of an equilateral triangle. These three layers 140A, 140B, and 140C, configured in this way, together with the first electrode 120 and the organic layer 130 described above, constitute a pixel.

[0112] In the second display area 102, the first layer 140A, the second layer 140B, and the third layer 140C can be repeatedly arranged along the first component direction G1 and the second component direction G2. Figure 3In the example shown, a pixel is formed by three layers 140A, 140B, and 140C, which are arranged at the vertices of an equilateral triangle in the same manner as the first display area 101. The pixels are spaced apart in the first element direction G1. In the first element direction G1, a transmissive area 104 is located between adjacent pixels. Pixels are spaced apart in the second element direction G2. A second layer 140B is located between two adjacent pixels in the second element direction G2. No first electrode 120 or organic layer 130 corresponding to this second layer 140B is formed; an insulating layer 160 is inserted between the second layer 140B (which does not constitute this pixel) and the substrate 110. The electrode line 140L is formed by the second layer 140B (which does not constitute this pixel), ensuring the conductivity of the second electrode 140.

[0113] Figure 4 It shows from Figure 3 The organic device 100 shown is a top view omitting the state of the second electrode 140. The organic layer 130 may comprise a first organic layer 130A, a second organic layer 130B, and a third organic layer 130C. The first organic layer 130A, the second organic layer 130B, and the third organic layer 130C may, for example, be a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer. In the following description, the term "organic layer 130" will be used when describing the structure of the common organic layer of the first organic layer 130A, the second organic layer 130B, and the third organic layer 130C. The first organic layer 130A, the second organic layer 130B, and the third organic layer 130C are arranged at the vertices of an equilateral triangle, similar to the three layers 140A to 140C of the second electrode 140.

[0114] The configuration of the second electrode 140 and the organic layer 130 when viewed from above is inspected by observing the organic device 100 using a high-magnification digital microscope. Based on the inspection results, the aforementioned occupancy, area, size, spacing, etc., can be calculated. If the organic device 100 is equipped with a cover such as a glass cover, the cover can be removed to observe the second electrode 140 and the organic layer 130. The cover can be removed by peeling or breaking it. Alternatively, a scanning electron microscope can be used instead of a digital microscope.

[0115] Next, an example of the layer structure of the organic device 100 will be described. Figure 5 It is schematically along Figure 3 The cross-sectional view of the AA line of the organic device shown. Figure 6 It is schematically along Figure 3 The cross-sectional view of the BB line of the organic device shown.

[0116] As described above, the organic device 100 includes a substrate 110 and an element 115 located on the substrate 110. As described above, the element 115 may have a first electrode 120, an organic layer 130 located on the first electrode 120, and a second electrode 140 located on the organic layer 130.

[0117] The organic device 100 may include an insulating layer 160 located between two adjacent first electrodes 120 when viewed from above. The insulating layer 160 may, for example, comprise polyimide. The insulating layer 160 may overlap with the ends of the first electrodes 120.

[0118] The insulating layer 160 may overlap with the electrode overlap region 148 described later when viewed from above. For example, when viewed from above, the electrode overlap region 148 may be surrounded by the outline of the insulating layer 160.

[0119] The electrode overlap region 148 comprises multiple layers of the second electrode 140. Therefore, the electrode overlap region 148 has a lower transmittance than a single layer of the second electrode 140. When light passing through the electrode overlap region 148 exits the organic device 100, uneven light intensity can sometimes occur. By overlapping the insulating layer 160 with the electrode overlap region 148, this uneven light intensity can be suppressed.

[0120] Electrode overlap region 148 is the area where the two layers partially overlap when viewed from above. Figure 3 In the example shown, the electrode overlap region 148, when viewed from above, includes the region where the first layer 140A overlaps with the second layer 140B, the region where the first layer 140A overlaps with the third layer 140C, and the region where the second layer 140B overlaps with the third layer 140C. The three overlapping regions of layers 140A, 140B, and 140C may not exist.

[0121] like Figure 7 and Figure 8 As shown, the electrode overlap region 148 may include the first electrode overlap region 149 that overlaps with the surrounding regions 142 of each layer. Figure 7 This is a top view showing the electrode overlap region 148. Figure 8 This is a cross-sectional view showing the electrode overlap region 148.

[0122] For example, the first electrode overlap region 149 includes the region where the periphery region 142 of the first layer 140A overlaps with the periphery region 142 of the second layer 140B, the region where the periphery region 142 of the first layer 140A overlaps with the periphery region 142 of the third layer 140C, and the region where the periphery region 142 of the second layer 140B overlaps with the periphery region 142 of the third layer 140C. In this embodiment, the electrode overlap region 148 is formed by the first electrode overlap region 149 formed by the overlap of the periphery regions 142 of each layer. The main body region 141 of each layer may not overlap with the electrode overlap region. The main body regions 141 of each layer may not overlap with each other.

[0123] like Figure 8 As shown, by overlapping the surrounding regions 142, the thickness of the second electrode 140 in the electrode overlap region 148 can be reduced. For example, as Figure 9 As shown, when the main body regions 141 overlap, the maximum thickness tb of the second electrode 140 in the electrode overlap region 148 is twice the thickness ta of the main body regions 141. Conversely, when the surrounding regions 142 overlap, the thickness tb of the second electrode 140 in the electrode overlap region 148 is less than twice the thickness ta of the main body regions 141. Therefore, by ensuring that the main body regions 141 do not overlap, the thickness tb of the second electrode 140 in the electrode overlap region 148 can be reduced.

[0124] like Figure 8 As shown, the first electrode overlapping region 149 can be spaced apart from the layer body region 141. The non-overlapping region 150 can be located between the first electrode overlapping region 149 and the layer body region 141.

[0125] For example, the first electrode overlap region 149, which overlaps with the peri-layer region 142 of the first layer 140A and the peri-layer region 142 of the second layer 140B, can be spaced apart from the main layer region 141 of the first layer 140A. A non-overlapping region 150 can be located between the first electrode overlap region 149 and the main layer region 141 of the first layer 140A. The first electrode overlap region 149, which overlaps with the peri-layer region 142 of the first layer 140A and the peri-layer region 142 of the second layer 140B, can be spaced apart from the main layer region 141 of the second layer 140B. A non-overlapping region 150 can be located between the first electrode overlap region 149 and the main layer region 141 of the second layer 140B.

[0126] Similarly, the first electrode overlap region 149, which overlaps with the layer periphery region 142 of the first layer 140A and the layer periphery region 142 of the third layer 140C, can be spaced apart from the layer body region 141 of each layer 140A and 140C.

[0127] Similarly, the first electrode overlap region 149, which overlaps with the layer periphery region 142 of the second layer 140B and the layer periphery region 142 of the third layer 140C, can be spaced apart from the layer body region 141 of each layer 140B and 140C.

[0128] Organic device 100 can be an active matrix type. For example, although not shown, organic device 100 can include a switch. The switch is electrically connected to multiple elements 115 respectively. The switch is, for example, a transistor. The switch can control the on / off switching of voltage or current for the corresponding element 115.

[0129] The substrate 110 includes a first surface 111 and a second surface 112. The substrate 110 may be a plate-shaped component with insulating properties. The substrate 110 preferably has translucency that allows light to pass through.

[0130] When the substrate 110 has a specified transmittance, the transmittance of the substrate 110 is preferably such that light emitted from the organic layer 130 can pass through for display. For example, the transmittance of the substrate 110 in the visible light region can be 70% or more, or 80% or more. The transmittance of the substrate 110 can be determined by the test method for the total transmittance of plastic-transparent materials according to JIS K7361-1.

[0131] The substrate 110 may or may not be flexible. The material of the substrate 110 may be selected appropriately according to the application of the organic device 100.

[0132] The material of the substrate 110 can be, for example, rigid materials that are not flexible, such as quartz glass, Pyrex glass, synthetic quartz plates, or alkali-free glass, or flexible materials that are flexible, such as resin films, optical resin plates, or thin glass. The substrate can be a laminate with barrier layers on one or both sides of the resin film.

[0133] The thickness of the substrate 110 can be appropriately selected based on the material used in the substrate 110 and the application of the organic device 100. For example, the thickness of the substrate 110 can be 0.005 mm or more. The thickness of the substrate 110 can be 5 mm or less.

[0134] By applying a voltage between the first electrode 120 and the second electrode 140, or by allowing current to flow between the first electrode 120 and the second electrode 140, element 115 can perform certain functions. For example, if element 115 is a pixel of an organic EL display device, element 115 can emit light that constitutes an image.

[0135] The first electrode 120 comprises a conductive material. For example, the first electrode 120 comprises a metal, a conductive metal oxide, or other conductive inorganic material. The first electrode 120 may comprise a permeable and conductive metal oxide such as indium tin oxide.

[0136] The materials constituting the first electrode 120 can be: metals such as Au, Cr, Mo, Ag, or Mg; inorganic oxides such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide, or indium oxide; or conductive polymers such as metal-doped polythiophene. These conductive materials can be used alone or in combination of two or more. When using two or more, a layer composed of each material can be laminated. Alternatively, alloys containing two or more materials can be used. For example, magnesium alloys such as MgAg can be used.

[0137] Organic layer 130 contains organic materials. When an electric current is applied to organic layer 130, organic layer 130 can perform certain functions. Applying an electric current means applying a voltage to organic layer 130 or allowing current to flow through organic layer 130. As organic layer 130, a light-emitting layer that emits light when an electric current is applied, or a layer that changes the transmittance or refractive index of light when an electric current is applied, etc., can be used. Organic layer 130 may contain organic semiconductor materials.

[0138] The laminated structure comprising the first electrode 120, the first organic layer 130A, and the second electrode 140 is also referred to as the first element 115A. The laminated structure comprising the first electrode 120, the second organic layer 130B, and the second electrode 140 is also referred to as the second element 115B. The laminated structure comprising the first electrode 120, the third organic layer 130C, and the second electrode 140 is also referred to as the third element. In the case where the organic device 100 is an organic EL display device, the first element 115A, the second element 115B, and the third element are each a sub-pixel. A pixel can be formed by combining the first element 115A, the second element 115B, and the third element 115C.

[0139] In the following description, the term "element 115" will be used when describing the structure of the element shared by the first element 115A, the second element 115B, and the third element.

[0140] When a voltage is applied between the first electrode 120 and the second electrode 140, the organic layer 130 located between them is activated. If the organic layer 130 is a light-emitting layer, light is emitted from the organic layer 130 and extracted to the outside from either the side of the second electrode 140 or the side of the first electrode 120.

[0141] When the organic layer 130 includes a light-emitting layer that emits light when energized, the organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer, etc.

[0142] For example, when the first electrode 120 is the anode, the organic layer 130 may have a hole injection and transport layer between the light-emitting layer and the first electrode 120. The hole injection and transport layer may be a hole injection layer with hole injection function, a hole transport layer with hole transport function, or both. Both a hole injection layer and a hole transport layer may be laminated within the hole injection and transport layer.

[0143] When the second electrode 140 is a cathode, the organic layer 130 may have an electron injection transport layer between the light-emitting layer and the second electrode 140. The electron injection transport layer may be an electron injection layer with electron injection function, an electron transport layer with electron transport function, or both. An electron injection layer and an electron transport layer may be laminated together.

[0144] The luminescent layer contains luminescent materials. The luminescent layer may contain additives that improve leveling properties.

[0145] As a luminescent material, known materials can be used, such as pigment-based materials, metal complex-based materials, or polymer-based materials.

[0146] As pigment materials, derivatives such as cyclopentadiene derivatives, tetraphenylbutadiene derivatives, triphenylamine derivatives, oxadiazole derivatives, pyrazoloquinoline derivatives, stilbene benzene derivatives, stilbene arylene derivatives, thiophene derivatives, thiophene ring compounds, pyridine ring compounds, violet ring ketone derivatives, perylene derivatives, oligothiophene derivatives, oxadiazole dimers, or pyrazoline dimers can be used.

[0147] As a metal complex system, metal complexes can be used, such as aluminum hydroxyquinoline complex, benzyl hydroxyquinoline beryllium complex, benzoxazole zinc complex, benzothiazole zinc complex, azomethyl zinc complex, porphyrin zinc complex, europium complex, etc., in which the central metal has rare earth metals such as Al, Zn, Be, or Tb, Eu, Dy, and the ligands have structures such as oxadiazole, thiadiazole, phenylpyridine, phenylbenzimidazole, quinoline, etc.

[0148] As polymeric materials, derivatives such as poly(p-phenylenevinylene), polythiophene, poly(p-phenylene), polysilane, polyacetylene, polyvinylcarbazole, polyfluorene, or polyquinoxaline, and their copolymers, can be used.

[0149] To improve luminescence efficiency or alter the wavelength of emitted light, the emissive layer may contain dopants. Examples of dopants include perylene derivatives, coumarin derivatives, rubrene derivatives, quinacridone derivatives, squaric acid lacton salt derivatives, porphyrin derivatives, styrene-based pigments, tetraphenylbenzene derivatives, pyrazoline derivatives, decacycloene, phenoxazinone, quinoxaline derivatives, carbazole derivatives, or fluorene derivatives. Dopants may contain heavy metal ions such as platinum or iridium, or may use organometallic complexes that exhibit phosphorescence. One or more dopants may be used.

[0150] As luminescent materials and dopants, materials described in, for example, those in Japanese Patent Application Publication No. 2010-272891

[0094] to

[0099] or International Publication No. 2012 / 132126

[0053] to

[0057] may also be used.

[0151] There is no particular limitation on the thickness of the emissive layer, as long as it allows electrons and holes to recombine and exhibit light emission. The thickness of the emissive layer can be, for example, greater than 1 nm or less than 500 nm.

[0152] Known materials can be used as hole injection transport materials for the hole injection transport layer. Examples of hole injection transport materials include triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolineone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, mesitylene derivatives, silazane derivatives, polythiophene derivatives, polyaniline derivatives, polypyrrole derivatives, phenylamine derivatives, anthracene derivatives, carbazole derivatives, fluorene derivatives, stilbene benzene derivatives, polyphenylacetylene derivatives, porphyrin derivatives, or styrylamine derivatives. Other examples include spirocyclic compounds, phthalocyanine compounds, or metal oxides. As a hole injection transport material, compounds described in, for example, those in Japanese Patent Application Publication No. 2011-119681, International Publication No. 2012 / 018082, Japanese Patent Application Publication No. 2012-069963, or International Publication No. 2012 / 132126

[0106] may also be appropriately selected.

[0153] When a hole injection and hole transport layer is constructed by laminating a hole injection layer and a hole transport layer, the hole injection layer may contain additive A, the hole transport layer may contain additive A, or both the hole injection layer and the hole transport layer may contain additive A. Additive A may be a low-molecular-weight compound or a high-molecular-weight compound. For example, fluorine compounds, ester compounds, or hydrocarbon compounds may be used as additive A.

[0154] Known materials can be used as electron injection transport materials for the electron injection transport layer. Examples of suitable electron injection transport materials include alkali metals, alkali metal alloys, alkali metal halides, alkaline earth metals, alkaline earth metal halides, alkaline earth metal oxides, organic complexes of alkali metals, magnesium halides or oxides, or alumina. Other suitable electron injection transport materials include copper hydroxide, phenanthroline, phenanthroline derivatives, triazole derivatives, oxadiazole derivatives, pyridine derivatives, nitro-substituted fluorene derivatives, anthraquinone dimethane derivatives, diphenylquinone derivatives, thiamethane dioxide derivatives, aromatic ring tetracarboxylic anhydrides such as naphthalene or perylene, carbodiimide, fluorenemethane derivatives, anthraquinone dimethane derivatives, anthrone derivatives, quinoxaline derivatives, hydroxyquinoline complexes, phthalocyanine compounds, or stilbene pyrazine derivatives.

[0155] Alternatively, an alkali metal or alkaline earth metal doped layer can be formed in an electron-transporting organic material, serving as the electron injection transport layer. As the electron-transporting organic material, metal complexes or their polymeric derivatives can be used, such as copper hydroxide, phenanthrene-3-methylphenanthrene, phenanthrene-3-methylphenanthrene derivatives, triazole derivatives, oxadiazole derivatives, pyridine derivatives, tris(8-hydroxyquinoline)aluminum (Alq3), etc. The doping metal can be Li, Cs, Ba, or Sr, etc.

[0156] The second electrode 140 comprises a conductive material such as a metal. The second electrode 140 is formed on the organic layer 130 by a mask vapor deposition method described later. Materials constituting the second electrode 140 may include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, chromium, or carbon. These materials may be used individually or in combination. When using two or more materials, the second electrode 140 may have a structure formed by laminating layers of each material. An alloy containing two or more materials may also be used as the second electrode 140. For example, magnesium alloys such as MgAg, aluminum alloys such as AlLi, AlCa, and AlMg, or alloys of alkali metals or alkaline earth metals may be used as the second electrode 140.

[0157] The thickness ta of the main body region 141 of the second electrode 140 can be, for example, 5 nm or more, 10 nm or more, 50 nm or more, or 100 nm or more. The thickness ta of the main body region 141 can be, for example, less than 200 nm, less than 500 nm, less than 1 μm, or less than 100 μm. The range of the thickness ta of the main body region 141 can be defined by a first group consisting of 5 nm, 10 nm, 50 nm, and 100 nm and / or a second group consisting of 200 nm, 500 nm, 1 μm, and 100 μm. The range of the thickness ta of the main body region 141 can be defined by a combination of any one value from the first group and any one value from the second group. The range of the thickness ta of the main body region 141 can be defined by a combination of any two values ​​from the first group. The range of the thickness ta of the main body region 141 can be defined by a combination of any two values ​​from the second group. For example, it can be 5nm or higher but less than 100μm, 5nm or higher but less than 1μm, 5nm or higher but less than 500nm, 5nm or higher but less than 200nm, 5nm or higher but less than 100nm, 5nm or higher but less than 50nm, 5nm or higher but less than 10nm, 10nm or higher but less than 100μm, 10nm or higher but less than 1μm, 10nm or higher but less than 50nm, 50nm or higher but less than 100μm, and 50nm or higher but less than 100μm. The range can be from 1μm to 50nm to 500nm, from 50nm to 200nm, from 50nm to 100nm, from 100nm to 100μm, from 100nm to 1μm, from 100nm to 500nm, from 100nm to 200nm, from 200nm to 100μm, from 200nm to 1μm, from 200nm to 500nm, from 500nm to 100μm, from 500nm to 1μm, or from 1μm to 100μm.

[0158] The smaller the thickness ta of the main body region 141, the higher the transmittance of the second electrode 140 and the higher the transmittance of the non-transmittance region 103. Light incident on the non-transmittance region 103 can also reach the sensor according to the transmittance of the non-transmittance region 103. By increasing the transmittance of the non-transmittance region 103, the amount of light received by the sensor can be increased.

[0159] The thickness of each component of the organic device 100 can be determined by observing a cross-sectional image of the organic device 100 using a scanning electron microscope or a white interferometer. For example, the thickness of the substrate 110 and the thickness of the second electrode 140 can be determined using a scanning electron microscope or a white interferometer. For example, the thickness of the layer body region 141 of the second electrode 140 can be determined using a white interferometer "VertScan (registered trademark), R6500H-A300" manufactured by Ryoka Systems Inc.

[0160] The method for forming the second electrode 140 of the organic device 100 described above by vapor deposition will be explained. Figure 10 This is a diagram showing the vapor deposition apparatus 10. The vapor deposition apparatus 10 performs a vapor deposition process that deposits a vapor deposition material onto an object.

[0161] The vapor deposition apparatus 10 may include a vapor deposition source 6, a heater 8, and a mask assembly 40. The vapor deposition apparatus 10 may also include an exhaust unit for creating a vacuum atmosphere inside the apparatus. The vapor deposition source 6 is, for example, a crucible. The vapor deposition source 6 contains a vapor deposition material 7, such as a conductive material. The heater 8 heats the vapor deposition source 6, causing the vapor deposition material 7 to evaporate under a vacuum atmosphere. The mask assembly 40 is positioned opposite the crucible 6.

[0162] like Figure 10 As shown, the mask assembly 40 may include: at least one mask 50; and a frame 41 supporting the mask 50. The frame 41 may include a first frame surface 41a and a second frame surface 41b. The mask 50 may be fixed to the first frame surface 41a. The second frame surface 41b is located on the opposite side of the first frame surface 41a. The frame 41 may include an opening 42. The opening 42 extends from the first frame surface 41a to the second frame surface 41b. The mask 50 may be fixed to the frame 41 such that it passes through the opening 42 when viewed from above. The frame 41 can support the mask 50 in a stretched state along its surface. Thus, deflection of the mask 50 can be suppressed.

[0163] As mask 50, the first mask 50A, the second mask 50B, or the third mask 50C, which will be described later, can be used. In the following description, when describing the mask structure common to the first mask 50A, the second mask 50B, and the third mask 50C, the term "mask 50" will be used. In this case, the mask components such as the through-hole and the shielding area, which will be described later, are also the same, and numbers without letters, such as "53" or "54", will be used. On the other hand, when describing the features unique to each of the first mask 50A, the second mask 50B, and the third mask 50C, numbers with corresponding letters such as "A", "B", or "C" appended after the numbers may also be used.

[0164] The mask 50 of the mask assembly 40 faces the first surface 111 of the substrate 110. The substrate 110 is the object to which the vapor deposition material 7 is attached using the mask 50. The mask 50 includes a plurality of through holes 53. The through holes 53 allow the vapor deposition material 7, which flies from the vapor deposition source 6, to pass through. The vapor deposition material 7, having passed through the through holes 53, is attached to the first surface 111 of the substrate 110. The mask 50 includes a first surface 51a and a second surface 51b. The first surface 51a faces the first surface 111. The second surface 51b is located on the opposite side of the first surface 51a. The through holes 53 extend from the first surface 51a to the second surface 51b.

[0165] The vapor deposition apparatus 10 may include a substrate holder 2 for holding a substrate 110. The substrate holder 2 may be movable in the thickness direction of the substrate 110. The substrate holder 2 may be movable in a direction along the first surface 111 of the substrate 110. The substrate holder 2 may control the tilting of the substrate 110. For example, the substrate holder 2 may include a plurality of chucks mounted on the outer edge of the substrate 110. Each chuck may be movable independently in both the thickness direction of the substrate 110 and in the direction along the first surface 111.

[0166] The vapor deposition apparatus 10 may include a mask holder 3 for holding the mask assembly 40. The mask holder 3 may be movable in the thickness direction of the mask 50. The mask holder 3 may be movable in the direction along the first surface 51a of the mask 50. For example, the mask holder 3 may include a plurality of chucks mounted on the outer edge of the frame 41. Each chuck may be movable independently in the thickness direction of the mask 50 and in the direction along the first surface 51a.

[0167] By moving at least one of the substrate holder 2 and the mask holder 3, the position of the mask 50 of the mask assembly 40 relative to the substrate 110 can be adjusted.

[0168] The vapor deposition apparatus 10 may include a cooling plate 4. The cooling plate 4 may be disposed on the second surface 112 side of the substrate 110. The cooling plate 4 may have a flow path for circulating refrigerant within the cooling plate 4. The cooling plate 4 can suppress the temperature rise of the substrate 110 during the vapor deposition process.

[0169] The vapor deposition apparatus 10 may include a magnet 5 disposed on the second surface 112 side. The magnet 5 may overlap with the cooling plate 4. The magnet 5 attracts the mask 50 toward the substrate 110 side by magnetic force. This reduces or eliminates the gap between the mask 50 and the substrate 110. This suppresses the generation of shadows during the vapor deposition process. Therefore, the dimensional and positional accuracy of the second electrode 140 can be improved. Alternatively, instead of the magnet 5, an electrostatic chuck utilizing electrostatic force can be used to attract the mask 50 toward the substrate 110 side.

[0170] The mask device 40 will be described. Figure 11 This is a top view showing the mask assembly 40. The mask assembly 40 may have two or more masks 50. The masks 50 may be fixed to the frame 41, for example, by welding.

[0171] Frame 41 includes a pair of first sides 411 and a pair of second sides 412. Frame 41 may have a rectangular outline. A mask 50 in a tensioned state may be fixed at the first side 411. The first side 411 may be longer than the second side 412. The pair of first sides 411 and the pair of second sides 412 may surround the opening 42.

[0172] The material constituting the frame 41 can be the same as the material of the mask 50 described later. For example, the material constituting the frame 41 can be an iron alloy containing nickel.

[0173] The mask 50 includes at least one unit 52. The unit 52 includes a through-hole 53 and a shielding area 54 surrounding the through-hole 53. The unit 52 is composed of a plurality of through-holes 53. The mask 50 may include two or more units 52. When using the mask 50 to fabricate a display device such as an OLED display, one unit 52 may correspond to the display area of ​​one OLED display device, i.e., one screen. One unit 52 may also correspond to multiple display areas. The shielding area 54 may be located between two units 52. Although not shown, the mask 50 may also include a through-hole located between two units 52.

[0174] Unit 52 may have a generally quadrilateral outline when viewed from above, or more precisely, a generally rectangular outline when viewed from above. Each unit 52 may have an outline of various shapes depending on the shape of the display area of ​​the organic EL display device. For example, each unit 52 may have a circular outline.

[0175] Figure 12 This is a top view showing an enlarged example of mask 50. Mask 50 has a first mask direction D1 and a second mask direction D2 intersecting the first mask direction D1. The first mask direction D1 may be orthogonal to the second mask direction D2. The first mask direction D1 may be along the first element direction G1, and the second mask direction D2 may be along the second element direction G2.

[0176] The mask 50 has the aforementioned through-hole 53 and shielding area 54. The through-hole 53 is arranged in the first direction D1 and the second direction D2 of the mask.

[0177] When the mask 50 is viewed along the normal direction of the first surface 51a, the mask 50 has a third mask region M3 and a fourth mask region M4. The third mask region M3 corresponds to the first display region 101 of the organic device 100 and overlaps with the first mask region M1 of the mask layer 55 described later. The fourth mask region M4 corresponds to the second display region 102 of the organic device 100 and overlaps with the second mask region M2 of the mask layer 55 described later.

[0178] Multiple through-holes 53 may be located in the third region M3 of the mask. In other words, in the first region M1 of the mask that overlaps with the third region M3, multiple through-holes 53 may be located in each mask 50. The multiple through-holes 53 in the third region M3 of the mask are present in a patterned manner. For example, the multiple through-holes 53 may be present in a manner corresponding to any one of the first layer 140A to the third layer 140C of the second electrode 140 in the first display region 101.

[0179] The third region M3 of the mask has a third aperture ratio, which represents the proportion of the area of ​​the through holes 53. The third aperture ratio is calculated by dividing the total area of ​​the through holes 53 located in the third region M3 of the mask by the area of ​​the third region M3 of the mask. The area of ​​the through holes 53 used to calculate the third aperture ratio can be the area of ​​the through holes 53 on the first surface 51a, or it can be the planar area of ​​the through portion 534 described later. The third aperture ratio can be greater than 0% or less than 100%. In this case, the third region M3 of the mask includes the area occupied by the through holes 53 and the area not occupied by the through holes 53.

[0180] Multiple through-holes 53 may be located in the fourth region M4 of the mask. In other words, multiple through-holes 53 may be located in each of the second regions M2 of the mask that overlap with the fourth region M4. The multiple through-holes 53 in the fourth region M4 of the mask are present in a patterned manner. For example, the multiple through-holes 53 may be present in a manner corresponding to any one of the first layer 140A to the third layer 140C of the second electrode 140 in the second display region 102.

[0181] The fourth region M4 of the mask has a fourth aperture ratio, which represents the proportion of the area of ​​the through holes 53. The fourth aperture ratio is calculated by dividing the total area of ​​the through holes 53 located in the fourth region M4 of the mask by the area of ​​the fourth region M4 of the mask. The fourth aperture ratio can be less than the third aperture ratio. The area of ​​the through holes 53 used to calculate the fourth aperture ratio can be the area of ​​the through holes 53 on the first surface 51a, or it can be the planar area of ​​the through portion 534 described later. The fourth aperture ratio can be greater than 0% or less than 100%. In this case, the fourth region M4 of the mask includes the area occupied by the through holes 53 and the area not occupied by the through holes 53.

[0182] The ratio of the fourth opening ratio to the third opening ratio can be, for example, 0.2 or more, 0.3 or more, or 0.4 or more. The ratio of the fourth opening ratio to the third opening ratio can be, for example, 0.6 or less, 0.7 or less, or 0.8 or less. The range of the ratio of the fourth opening ratio to the third opening ratio can be defined by a first group consisting of 0.2, 0.3, and 0.4 and / or a second group consisting of 0.6, 0.7, and 0.8. The range of the ratio of the fourth opening ratio to the third opening ratio can be defined by a combination of any one value from the first group and any one value from the second group. The range of the ratio of the fourth opening ratio to the third opening ratio can be defined by a combination of any two values ​​from the first group. The range of the ratio of the fourth opening ratio to the third opening ratio can be defined by a combination of any two values ​​from the second group. For example, it can be 0.2 or higher than 0.8, 0.2 or higher than 0.7, 0.2 or higher than 0.6, 0.2 or higher than 0.4, 0.2 or higher than 0.3, 0.3 or higher than 0.8, 0.3 or higher than 0.7, 0.3 or higher than 0.6, 0.3 or higher than 0.4, 0.4 or higher than 0.8, 0.4 or higher than 0.7, 0.4 or higher than 0.6, 0.6 or higher than 0.8, 0.6 or higher than 0.7, or 0.7 or higher than 0.8.

[0183] The mask 50 may have alignment marks 50M. Alignment marks 50M are formed, for example, at the corners of units 52 of the mask 50. During the process of forming the second electrode 140 on the substrate 110 using the mask 50 via vapor deposition, alignment marks 50M can be used to align the mask 50 with the substrate 110. Alignment marks 50M can be formed, for example, at a location overlapping the opening 42, or at a location overlapping the frame 41. When fabricating the mask assembly 40, alignment marks 50M can be used to align the mask 50 with the frame 41.

[0184] In the process of forming the second electrode 140, multiple masks 50 can be used. For example, such as Figures 13A-13C As shown, multiple masks 50 can include a first mask 50A, a second mask 50B, and a third mask 50C. The first mask 50A, the second mask 50B, and the third mask 50C can constitute different mask assemblies 40. For example... Figure 13A As shown, the mask device 40 equipped with the first mask 50A is also referred to as the first mask device 40A. For example... Figure 13B As shown, the mask device 40 equipped with the second mask 50B is also referred to as the second mask device 40B. Figure 13CAs shown, the mask device 40 with the third mask 50C is also referred to as the third mask device 40C.

[0185] In the process of forming the second electrode 140, for example, by... Figure 13A The first mask assembly 40A shown is mounted to the vapor deposition apparatus 10 to form the first layer 140A of the second electrode 140 on the substrate 110. Next, the... Figure 13B The second mask assembly 40B shown is mounted to the vapor deposition apparatus 10 to form a second layer 140B of the second electrode 140 on the substrate 110. Next, the second layer 140B of the second electrode 140 is formed. Figure 13C The third mask assembly 40C shown is mounted to the vapor deposition apparatus 10 to form the third layer 140C of the second electrode 140 on the substrate 110. Thus, in the process of forming the second electrode 140 of the organic device 100, multiple masks 50, such as the first mask 50A, the second mask 50B, and the third mask 50C, are used sequentially. The group of multiple masks 50 used to form the second electrode 140 of the organic device 100 is also referred to as a "mask group".

[0186] Figure 14 This is a diagram showing an example of the cross-sectional structure of the mask 50. The mask 50 may be composed of a metal plate 51 having a plurality of through holes 53 formed therein. The through holes 53 penetrate the metal plate 51 from the first surface 51a to the second surface 51b.

[0187] The through hole 53 may include a first recess 531 and a second recess 532. The first recess 531 is located on the first surface 51a side. The second recess 532 is located on the second surface 51b side. The first recess 531 is connected to the second recess 532 in the thickness direction of the metal plate 51.

[0188] Viewed from above, the dimension r2 of the second recess 532 can be larger than the dimension r1 of the first recess 531. The first recess 531 can be formed by machining the metal plate 51 from the first surface 51a side using etching or the like. The second recess 532 can be formed by machining the metal plate 51 from the second surface 51b side using etching or the like. The first recess 531 and the second recess 532 are connected at a connecting portion 533. The height h of the connecting portion 533 from the first surface 51a is also called the section height. The section height will be a factor affecting shading, as described later.

[0189] The reference numeral 534 indicates the through section. The opening area of ​​the through hole 53, viewed from above, is smallest at the through section 534. The through section 534 can be defined by the connecting portion 533. Figure 14 In the diagram, the through section 534 is represented by dimension r. Dimension r is smaller than dimension r1 and smaller than dimension r2.

[0190] In the vapor deposition method using mask 50, the vapor deposition material 7 passes through the through-hole 534 of the through-hole 53 from the second surface 51b side to the first surface 51a side. The vapor deposition material 7 adheres to the substrate 110, thereby forming the second electrode 140 described above on the substrate 110. More specifically, the first layer 140A, the second layer 140B, and the third layer 140C described above are formed on the substrate 110. The planar contours of the layers formed on the substrate 110 are mainly defined by the planar contours of the through-hole 534. More specifically, the main layer region 141 of the second electrode 140 is mainly defined by the planar contours of the through-hole 534. The surrounding region 142 of the second electrode 140 is mainly defined by the contours of the through-holes 53A to 53C in the first surface 51a.

[0191] In the vapor deposition process where the vapor deposition material 7 is deposited onto the substrate 110, a portion of the vapor deposition material 7 travels from the vapor deposition source 6 towards the substrate 110 along the normal direction. However, there are also instances where the vapor deposition material 7 travels in a direction inclined to the normal direction. In this case, a portion of the vapor deposition material 7 traveling in the inclined direction does not reach the substrate 110 but reaches and adheres to the second surface 51b of the mask 50 and the wall surface of the through hole 53. In the through hole 53, it easily adheres to the wall surface of the second recess 532. Therefore, the thickness of the vapor deposition layer formed on the substrate 110 can maintain the desired thickness in the center of the through hole 53, but it easily becomes thinner as it approaches the wall surface of the through hole 53. This phenomenon, where the adhesion of the vapor deposition material 7 to the substrate 110 is hindered by the wall surface of the through hole 53 and the second surface 51b, is called shadowing.

[0192] The through-hole 53 includes an effective area 57 and a surrounding area 58. The effective area 57, when viewed from above, is located at the center of the through-hole 53 and is an area less susceptible to the aforementioned shadowing. The surrounding area 58 is located outside and around the effective area 57. The surrounding area 58 is an area easily affected by shadowing. The effective area 57 and the surrounding area 58 are located on the first surface 51a.

[0193] The effective region 57 and the surrounding region 58 can be defined by a region-delineating line L passing through the connecting portion 533. The region-delineating line L can be defined as a straight line passing through the connecting portion 533 and forming an angle θ with the first surface 51a of the mask 50. The effective region 57 is defined as being closer to the inside of the through-hole 53 than the first intersection point CP1 where the region-delineating line L intersects with the first surface 51a. The surrounding region 58 is defined as being closer to the outside of the through-hole 53 than the first intersection point CP1.

[0194] The delineation line L can be defined by either the direction of arrival of the vapor-deposited material 7 or the cross-sectional shape of the through-hole 53. Figure 15 In the example shown, the region delineation line L is defined by the cross-sectional shape of the through hole 53.

[0195] More specifically, such as Figure 15 As shown, the angle formed by the direction of the vapor deposition material 7 flying from the vapor deposition source 6 and the first surface 51a of the mask 50 is taken as the flying angle θ1. The angle formed by the straight line passing through the connecting part 533 and connecting to any point on the wall of the second recess 532 and the first surface 51a of the mask 50 is taken as the mask angle θ2. Figure 15 In the example shown, the mask angle θ2 is greater than the angle of arrival θ1. In this case, the surrounding area 58, which is easily affected by shadows, depends on the mask angle θ2. Therefore, the angle θ of the area-delineating line L can be the mask angle θ2. In this case, the area-delineating line L passes through the connecting portion 533 and connects to any point on the wall of the second recess 532. Figure 15 In the example shown, the region delineation line L passes through the second intersection point CP2 of the second recess 532 and the second surface 52b. Figure 15 In the example shown, the width of the surrounding region 58 is represented by the cross-sectional height h / tanθ2.

[0196] Figure 15 The angle θ2 formed by the line L delineating the region shown and the first surface 51a can be, for example, 35° or more, 40° or more, or 45° or more. Angle θ2 can be, for example, less than 50°, less than 60°, or less than 70°. The range of angle θ2 can be defined by a first group consisting of 35°, 40°, and 45° and / or a second group consisting of 50°, 60°, and 70°. The range of angle θ2 can be defined by a combination of any one value from the first group and any one value from the second group. The range of angle θ2 can be defined by a combination of any two values ​​from the first group. The range of angle θ2 can be defined by a combination of any two values ​​from the second group. For example, it can be 35° to 70°, 35° to 60°, 35° to 50°, 35° to 45°, 35° to 40°, 40° to 70°, 40° to 60°, 40° to 50°, 40° to 45°, 45° to 70°, 45° to 60°, 45° to 50°, 50° to 70°, 50° to 60°, or 60° to 70°.

[0197] The through-hole 53, when viewed from above, can have a generally polygonal or generally circular outline. For example, the through-hole 53 can have a generally quadrilateral, generally hexagonal, or generally octagonal outline. The through-hole 53 can be formed in a similar shape in the thickness direction of the mask 50. Figures 16-19 In the example shown, the through-hole 53 has a generally octagonal profile. Two opposing sides are along the first direction D1 of the mask, and the other two opposing sides are along the second direction D2 of the mask. When the profile of the through-hole 53 is a generally polygonal shape, the four corners of the profile can be curved.

[0198] The area of ​​the metal plate 51 other than the through portion 534 is the aforementioned shielding area 54, which can shield the vapor-deposited material 7 facing the substrate 110.

[0199] The shielding area 54 of the fourth region M4 of the mask may include a recess that does not penetrate the metal plate 51. By providing a recess in the fourth region M4 of the mask, the rigidity of the fourth region M4 of the mask can be reduced. This reduces the difference in rigidity between the fourth region M4 of the mask and the third region M3 of the mask. Therefore, wrinkles in the mask 50 due to the difference in rigidity can be suppressed. Wrinkles, for example, are easily generated when tension is applied to the mask 50.

[0200] The thickness T of the mask 50 can be, for example, 5 μm or more, 10 μm or more, 15 μm or more, or 20 μm or more. The thickness T of the mask 50 can be, for example, less than 25 μm, less than 30 μm, less than 50 μm, or less than 100 μm. The range of the thickness T of the mask 50 can be defined by a first group consisting of 5 μm, 10 μm, 15 μm, and 20 μm and / or a second group consisting of 25 μm, 30 μm, 50 μm, and 100 μm. The range of the thickness T of the mask 50 can be defined by a combination of any one value from the first group and any one value from the second group. The range of the thickness T of the mask 50 can be defined by a combination of any two values ​​from the first group. The range of the thickness T of the mask 50 can be defined by a combination of any two values ​​from the second group. For example, it can be 5μm or larger than 100μm, 5μm or larger than 50μm, 5μm or larger than 30μm, 5μm or larger than 25μm, 5μm or larger than 20μm, 5μm or larger than 15μm, 5μm or larger than 10μm, 10μm or larger than 100μm, 10μm or larger than 50μm, 10μm or larger than 30μm, 10μm or larger than 25μm, 10μm or larger than 20μm, 10μm or larger than 15μm, 15μm or larger than 100μm, etc. 15μm and above 50μm, can be 15μm and above 30μm, can be 15μm and above 25μm, can be 15μm and above 20μm, can be 20μm and above 100μm, can be 20μm and above 50μm, can be 20μm and above 30μm, can be 20μm and above 25μm, can be 25μm and above 100μm, can be 25μm and above 50μm, can be 25μm and above 30μm, can be 30μm and above 50μm, can also be 50μm and above 100μm.

[0201] As a method for measuring the thickness T of mask 50, a contact measurement method can be used. As a contact measurement method, the HEIDENHAIM-METRO "MT1271" length gauge, which is equipped with a spherical bushing-guided plunger, can be used.

[0202] The cross-sectional shape of the through hole 53 is not limited to Figure 14 The shape shown. The method for forming the through hole 53 is not limited to etching, and various methods can be used. For example, the mask 50 can be formed by plating in the manner that forms the through hole 53.

[0203] As a material constituting the mask 50, a nickel-containing iron alloy can be used, for example. The iron alloy may also contain cobalt in addition to nickel. For example, as a material for the mask 50, an iron alloy with a combined nickel and cobalt content of 30% to 54% by mass and a cobalt content of 0% to 6% by mass can be used. As a nickel-containing or nickel-and-cobalt-containing iron alloy, an Invar alloy containing 34% to 38% by mass of nickel, a super Invar alloy containing cobalt in addition to 30% to 34% by mass of nickel, or a low-thermal-expansion Fe-Ni plating alloy containing 38% to 54% by mass of nickel can be used. By using such an iron alloy, the coefficient of thermal expansion of the mask 50 can be reduced. For example, when a glass substrate is used as the substrate 110, the coefficient of thermal expansion of the mask 50 can be set to a value as low as that of the glass substrate. Therefore, during the vapor deposition process, the dimensional and positional accuracy of the vapor deposition layer formed on the substrate 110 can be suppressed from decreasing due to the difference in the coefficients of thermal expansion between the mask 50 and the substrate 110.

[0204] The mask assembly 56 will be described. The mask assembly 56 includes two or more masks 50. In this embodiment, the mask assembly 56 includes the first mask 50A, the second mask 50B, and the third mask 50C described above. The laminate obtained by overlapping the first mask 50A, the second mask 50B, and the third mask 50C is also referred to as a mask laminate 55.

[0205] Next, the first mask 50A will be described in detail. Figure 16 This is a top view showing the third region M3 and the fourth region M4 of the mask 50A enlarged on the first surface 51a. The first mask 50A has a first through hole 53A and a first shielding region 54A. The first through hole 53A is arranged in the first direction D1 and the second direction D2 of the mask. In the third region M3 and the fourth region M4, the first through hole 53A is positioned corresponding to the first layer 140A of the second electrode 140. Figures 16-20 The outline of the through hole 53 shown in the top view is the outline of the through holes 53A to 53C in the first surface 51a of the mask 50A to 50C. The outline of the through holes 53A to 53C in the first surface 51a corresponds to the outline of the first recess 531 in the first surface 51a.

[0206] Reference Figure 17 The second mask 50B will be described. Figure 17This is a top view showing the third region M3 and the fourth region M4 of the mask 50B enlarged on the first surface 51a. The second mask 50B has a second through hole 53B and a second shielding region 54B. The second through hole 53B is arranged in the same way as the first through hole 53A in the first direction D1 and the second direction D2 of the mask. In the third region M3 and the fourth region M4, the second through hole 53B is positioned corresponding to the second layer 140B of the second electrode 140.

[0207] Reference Figure 18 The third mask 50C will be described. Figure 18 This is a top view showing the third region M3 and the fourth region M4 of the mask on the first surface 51a of the third mask 50C, magnified. The third mask 50C has a third through-hole 53C and a third shielding region 54C. The third through-hole 53C is arranged in the same way as the first through-hole 53A in the first direction D1 and the second direction D2 of the mask. In the third region M3 and the fourth region M4, the third through-hole 53C is positioned corresponding to the third layer 140C of the second electrode 140.

[0208] In the method for determining the shape and arrangement of the through holes 53A-53C of each mask 50A-50C, parallel light can be incident along the normal direction of each mask 50A-50C onto one of the first surface 51a or the second surface 51b. In this case, the parallel light exits from the other of the first surface 51a or the second surface 51b. The shape of the area occupied by the emitted light can be measured as the shape of the through hole 53. The shape of the area occupied by the emitted light corresponds to the shape of the through portion 534 described above.

[0209] When determining the shape and arrangement of the through holes 53A to 53C in the first surface 51a of each mask 50A to 50C, the determination can be performed by image processing of the first surface 51a. For example, an imaging device can be used to photograph the first surface 51a of each mask 50A to 50C to obtain image data related to the contours of the through holes 53A to 53C in the first surface 51a.

[0210] The positional relationship between the first mask 50A, the second mask 50B, and the third mask 50C is explained. Figure 19 This is a top view showing the mask stack 55. The mask stack 55 has two or more overlapping masks 50. Figure 19 The mask stack 55 shown has overlapping first mask 50A, second mask 50B and third mask 50C.

[0211] In the mask stack 55, the alignment marks 50M of each mask 50A to 50C can coincide. Alternatively, the masks 50A to 50C can be overlapped based on the arrangement of the units 52 of each mask 50A to 50C. Alternatively, the masks 50A to 50C can be overlapped based on the arrangement of the through holes 53A to 53C and the shielding regions 54A to 54C of each mask 50A to 50C. When overlapping the masks 50A to 50C, tension may be applied to each mask 50A to 50C, or no tension may be applied.

[0212] For an image showing the state of overlapping two or more masks 50, it can be obtained by overlaying the image data of each mask 50. For example, using an image processing device, the image data of the first surface 51a of each mask 50A to 50C obtained above can be overlaid. Thus, it is possible to produce... Figure 19 Such a diagram. When acquiring image data, tension can be applied to each mask 50A to 50C, or no tension can be applied. For diagrams showing the state of two or more masks 50 overlapping, they can also be obtained by overlapping the design drawings used to manufacture each mask 50A to 50C.

[0213] like Figure 19 As shown, the mask laminate 55 has a through region 55A. When viewed from above, the through region 55A includes at least one of the through holes 53A to 53C of each mask 50A to 50C. That is, when viewed from above, the through region 55A overlaps with at least any one of the through holes 53A to 53C of each mask 50A to 50C. Therefore, in the vapor deposition process, at least one layer of the second electrode 140 is formed in the region of the substrate 110 corresponding to the through region 55A. The through region 55A is defined by the outlines of the through holes 53A to 53C in the first surface 51a of each mask 50A to 50C.

[0214] Viewed from above, the mask layer 55 includes a first mask region M1 and a second mask region M2. The first mask region M1 corresponds to the first display region 101 of the organic device 100 and overlaps with the third mask region M3 of the mask 50 described above. The second mask region M2 corresponds to the second display region 102 of the organic device 100 and overlaps with the fourth mask region M4 of the mask 50 described above.

[0215] In the first region M1 of the mask, the through region 55A has a first aperture ratio. The first aperture ratio represents the proportion of the area of ​​the through region 55A in the first region M1 of the mask. The first aperture ratio is calculated by dividing the total area of ​​the through regions 55A located in the first region M1 of the mask by the area of ​​the first region M1 of the mask. The first region M1 of the mask can be aligned with the third region M3 of the mask when viewed from above.

[0216] The first aperture ratio can be greater than 0% and less than 100%. In this case, even when masks 50A to 50C overlap, the first region M1 of the mask includes the area occupied by any one of the through holes 53A to 53C and the area not occupied by any one of the through holes 53A to 53C. However, it is not limited to this; the first aperture ratio can also be 100%. In this case, the entire first region M1 of the mask is occupied by any one of the through holes 53A to 53C.

[0217] In the second region M2 of the mask, the through region 55A has a second aperture ratio. The second aperture ratio represents the proportion of the area of ​​the through region 55A in the second region M2 of the mask. The second aperture ratio is calculated by dividing the total area of ​​the through regions 55A located in the second region M2 of the mask by the area of ​​the second region M2 of the mask. The second region M2 of the mask may coincide with the fourth region M4 of the mask when viewed from above. The second aperture ratio may be less than the first aperture ratio.

[0218] The second aperture ratio can be greater than 0% and less than 100%. In this case, even when the masks 50A to 50C overlap, the second region M2 of the mask includes the area occupied by any one of the through holes 53A to 53C and the area not occupied by any one of the through holes 53A to 53C.

[0219] The ratio of the second opening ratio to the first opening ratio can be, for example, 0.2 or more, 0.3 or more, or 0.4 or more. The ratio of the second opening ratio to the first opening ratio can be, for example, 0.6 or less, 0.7 or less, or 0.8 or less. The range of the ratio of the second opening ratio to the first opening ratio can be defined by a first group consisting of 0.2, 0.3, and 0.4 and / or a second group consisting of 0.6, 0.7, and 0.8. The range of the ratio of the second opening ratio to the first opening ratio can be defined by a combination of any one value from the first group and any one value from the second group. The range of the ratio of the second opening ratio to the first opening ratio can be defined by a combination of any two values ​​from the first group. The range of the ratio of the second opening ratio to the first opening ratio can be defined by a combination of any two values ​​from the second group. For example, it can be 0.2 or higher than 0.8, 0.2 or higher than 0.7, 0.2 or higher than 0.6, 0.2 or higher than 0.4, 0.2 or higher than 0.3, 0.3 or higher than 0.8, 0.3 or higher than 0.7, 0.3 or higher than 0.6, 0.3 or higher than 0.4, 0.4 or higher than 0.8, 0.4 or higher than 0.7, 0.4 or higher than 0.6, 0.6 or higher than 0.8, 0.6 or higher than 0.7, or 0.7 or higher than 0.8.

[0220] The through region 55A may include a hole overlap region 59. The hole overlap region 59 is the region where the through holes 53 of two or more masks 50 overlap when viewed from above. That is, the hole overlap region 59 includes at least two of the through holes 53 of the two or more masks 50 contained in the mask stack 55 when viewed from above. More specifically, the hole overlap region 59 is the region where the through holes 53 in the first surface 51a of each mask 50 overlap.

[0221] exist Figure 19 In the example shown, the hole overlap region 59, when viewed from above, includes: the region where the first through-hole 53A overlaps with the second through-hole 53B; the region where the first through-hole 53A overlaps with the third through-hole 53C; and the region where the second through-hole 53B overlaps with the third through-hole 53C. Therefore, in the vapor deposition process, a second electrode 140 with two layers is formed in the region of the substrate 110 corresponding to the hole overlap region 59. The region where the first through-hole 53A, the second through-hole 53B, and the third through-hole 53C overlap may not exist in the through-hole region 55A.

[0222] like Figure 20 and Figure 21As shown, the hole overlap region 59 may include the first hole overlap region 60, which is the area 58 surrounding the through hole 53 of the two masks 50 contained in the mask stack 55. Figure 20 This is a top view showing the overlapping area 59 of the holes. Figure 21 This is a cross-sectional view showing the overlapping area 59 of the holes. Figure 21 As an example, the overlapping area 59 of the holes formed by the first mask 50A and the second mask 50B is shown.

[0223] For example, the first hole overlap region 60 includes: the region where the surrounding region 58 of the first through hole 53A overlaps with the surrounding region 58 of the second through hole 53B; the region where the surrounding region 58 of the first through hole 53A overlaps with the surrounding region 58 of the third through hole 53C; and the region where the surrounding region 58 of the second through hole 53B overlaps with the surrounding region 58 of the third through hole 53C. In this embodiment, the hole overlap region 59 is formed by the first hole overlap region 60, which overlaps with the surrounding region 58 of the through hole 53. In this embodiment, the hole overlap region 59 does not overlap with the effective region 57 of the through hole 53.

[0224] The overlapping area 60 of the first hole can be separated from the effective area 57. The non-overlapping area 61 can be located between the overlapping area 60 of the first hole and the effective area 57.

[0225] For example, the overlapping region 60 of the first through hole 53A, where the surrounding region 58 of the first through hole 53A overlaps with the surrounding region 58 of the second through hole 53B, can be spaced apart from the effective region 57 of the first through hole 53A. A non-overlapping region 61 can be located between the overlapping region 60 and the effective region 57 of the first through hole 53A. Similarly, the overlapping region 60 of the first through hole 53A, where the surrounding region 58 of the first through hole 53A overlaps with the surrounding region 58 of the second through hole 53B, can be spaced apart from the effective region 57 of the second through hole 53B. A non-overlapping region 61 can be located between the overlapping region 60 and the effective region 57 of the second through hole 53B.

[0226] Similarly, the overlapping area 60 of the first through hole 53A, which overlaps with the surrounding area 58 of the third through hole 53C, can be spaced apart from the effective areas 57 of each through hole 53A, 53C. The non-overlapping area 61 can be located between the overlapping area 60 of the first through hole and the effective areas 57 of each through hole 53A, 53C.

[0227] Similarly, the overlapping area 60 of the first hole, which overlaps with the surrounding area 58 of the second through hole 53B and the surrounding area 58 of the third through hole 53C, can be spaced apart from the effective areas 57 of each through hole 53B and 53C. The non-overlapping area 61 can be located between the overlapping area 60 of the first hole and the effective areas 57 of each through hole 53B and 53C.

[0228] By including the first hole overlap region 60 in the through region 55A, a [structure / form] can be formed. Figure 7 and Figure 8 The second electrode 140 is shown. The first hole overlap region 60 corresponds to the first electrode overlap region 149 mentioned above.

[0229] The area of ​​the overlapping region 59 can be smaller than the area of ​​the first through hole 53A. The ratio of the area of ​​the overlapping region 59 to the area of ​​the first through hole 53A can be, for example, 0.02 or more, 0.05 or more, or 0.10 or more. The ratio of the area of ​​the overlapping region 59 to the area of ​​the first through hole 53A can be, for example, 0.20 or less, 0.30 or less, or 0.40 or less. The range of the ratio of the area of ​​the overlapping region 59 to the area of ​​the first through hole 53A can be defined by a first group consisting of 0.02, 0.05, and 0.10 and / or a second group consisting of 0.20, 0.30, and 0.40. The range of the ratio of the area of ​​the overlapping region 59 to the area of ​​the first through hole 53A can be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the ratio of the area of ​​the overlapping region 59 to the area of ​​the first through hole 53A can be defined by a combination of any two values ​​included in the first group mentioned above. The range of the ratio of the area of ​​the overlapping region 59 to the area of ​​the first through hole 53A can be defined by a combination of any two values ​​included in the second group mentioned above. For example, it can be 0.02 or higher than 0.40, 0.02 or higher than 0.30, 0.02 or higher than 0.20, 0.02 or higher than 0.10, 0.02 or higher than 0.05, 0.05 or higher than 0.40, 0.05 or higher than 0.30, 0.05 or higher than 0.20, 0.05 or higher than 0.10, 0.10 or higher than 0.40, 0.10 or higher than 0.30, 0.10 or higher than 0.20, 0.20 or higher than 0.40, 0.20 or higher than 0.30, or 0.30 or higher than 0.40.

[0230] The area of ​​the overlapping region 59 can be smaller than the area of ​​the second through hole 53B. The range of the ratio of the area of ​​the overlapping region 59 to the area of ​​the second through hole 53B can be the range of the "ratio of the area of ​​the overlapping region 59 to the area of ​​the first through hole 53A" mentioned above.

[0231] The area of ​​the overlapping region 59 can be smaller than the area of ​​the third through hole 53C. The range of the ratio of the area of ​​the overlapping region 59 to the area of ​​the third through hole 53C can be the range of the "ratio of the area of ​​the overlapping region 59 to the area of ​​the first through hole 53A" mentioned above.

[0232] like Figure 19 As shown, the through region 55A located in the second region M2 of the mask may include two or more through lines 55L arranged in the first direction D1 of the mask. The through lines 55L may extend in the second direction D2 of the mask. For example, the through line 55L may include a third end and a fourth end connected to the through region 55A of the first region M1 of the mask. The fourth end is located on the side opposite to the third end in the second direction D2 of the mask.

[0233] An example of a method for manufacturing organic device 100 will be described.

[0234] First, a substrate 110 on which the first electrode 120 is formed is prepared. The first electrode 120 is formed, for example, by forming a conductive layer constituting the first electrode 120 on the substrate 110 by sputtering or the like, and then patterning the conductive layer by photolithography or the like. An insulating layer 160 located between two adjacent first electrodes 120 when viewed from above can be formed on the substrate 110.

[0235] Next, as Figure 5 and Figure 6 As shown, an organic layer 130 comprising a first organic layer 130A, a second organic layer 130B, and a third organic layer 130C is formed on the first electrode 120. The first organic layer 130A can be formed, for example, by vapor deposition using a mask having through-holes corresponding to the first organic layer 130A. For example, the first organic layer 130A can be formed by vapor deposition of an organic material or the like onto the first electrode 120 corresponding to the first organic layer 130A via a mask. The second organic layer 130B can also be formed by vapor deposition using a mask having through-holes corresponding to the second organic layer 130B. The third organic layer 130C can also be formed by vapor deposition using a mask having through-holes corresponding to the third organic layer 130C.

[0236] Next, a second electrode formation process can be performed. In the second electrode formation process, a second electrode 140 is formed on the organic layer 130 using the aforementioned mask assembly 56. First, a process can be performed to form the first layer 140A of the second electrode 140 using a vapor deposition method with the first mask 50A. For example, a conductive material such as a metal is vapor-deposited onto the organic layer 130 via the first mask 50A. This forms the first layer 140A. Next, a process can be performed to form the second layer 140B of the second electrode 140 using a vapor deposition method with the second mask 50B. For example, a conductive material such as a metal is vapor-deposited onto the organic layer 130 via the second mask 50B. This forms the second layer 140B. Next, a process can be performed to form the third layer 140C of the second electrode 140 using a vapor deposition method with the third mask 50C. For example, a conductive material such as a metal is deposited onto the organic layer 130 via a third mask 50C. This allows the formation of a third layer 140C. Thus, as... Figure 5 and Figure 6 As shown, a second electrode 140 comprising a first layer 140A, a second layer 140B, and a third layer 140C can be formed.

[0237] It should be noted that there is no particular limitation on the order in which the first layer 140A, the second layer 140B, and the third layer 140C are formed. For example, the vapor deposition process can be performed in the order of the third layer 140C, the second layer 140B, and the first layer 140A.

[0238] The effects of the present invention are summarized.

[0239] The second electrode 140 in the second display area 102 includes an electrode overlap region 148 where the first layer 140A and the second layer 140B overlap, and the electrode overlap region 148 includes a first electrode overlap region 149 where the peri-layer region 142 of the first layer 140A overlaps with the peri-layer region 142 of the second layer 140B. This reduces the thickness of the second electrode 140 in the first electrode overlap region 149 and increases the transmittance in the first electrode overlap region 149. Therefore, the transmittance of the non-transmissive region 103 of the second display area 102 can be increased, and the light transmittance of the second display area 102 can be improved.

[0240] The through region 55A in the second mask region M2 of the mask laminate 55 includes a hole overlap region 59 where the through holes 53 of the two masks 50 overlap, and the hole overlap region 59 includes a first hole overlap region 60 where the surrounding regions 58 of the two masks 50 overlap. Thus, a first electrode overlap region 149 that can reduce the thickness of the second electrode 140 can be formed.

[0241] The first electrode overlap region 149 is spaced apart from the layer body region 141. As a result, the overlap of the layer body region 141 with the first electrode overlap region 149 can be suppressed, and the thickness of the second electrode 140 in the first electrode overlap region 149 can be reduced.

[0242] The first aperture overlap region 60 of the mask layer 55 is spaced apart from the effective region 57. As a result, a first electrode overlap region 149 spaced apart from the main layer region 141 can be formed.

[0243] In each of the first mask region M1 and the second mask region M2, a plurality of through holes 53 are located in the mask 50. Therefore, a plurality of through holes 53 can be formed in the third mask region M3 and the fourth mask region M4 of each mask 50. For example, the second electrode 140 of the organic device 100 can be formed by layers 140A-140C patterned in a manner corresponding to the through holes 53A-53C of each mask 50A-50C. In this case, the number of mask 50 sheets used to form the second electrode 140 can be reduced, and the number of vapor deposition cycles used to form the second electrode 140 can be reduced. Therefore, the amount of vapor deposition material 7 can be reduced, and the environmental impact can be reduced. Furthermore, a shielding region 54 is formed around the through holes 53A-53C in the third mask region M3, allowing material from the mask 50A-50C to remain. Therefore, the mechanical strength of each mask 50A-50C can be ensured.

[0244] It should be noted that various modifications can be made to the above-described embodiment. Hereinafter, variations will be described with reference to the accompanying drawings. In the following description and the accompanying drawings used in the description, parts that can be constructed in the same manner as the corresponding parts in the above-described embodiment will be referred to using the same reference numerals, and repeated descriptions will be omitted. Furthermore, where the effects obtained in the above-described embodiment are obvious and can also be obtained in the variations, their descriptions may also be omitted.

[0245] use Figures 22-26 The first variation will be explained. Figure 22 This is a top view showing a modified example of the second electrode in the second display area. Figure 23 It is shown Figure 22 A top view of the electrode overlap region 148 shown. Figure 24 It is shown Figure 23 The cross-sectional view of the electrode overlap region is shown. Figure 25 This is a top view showing the overlapping area 59 of the holes. Figure 26 It is shown Figure 25 The cross-sectional view of the overlapping area 59 of the holes shown.

[0246] For example, such as Figures 22-24As shown, the electrode overlap region 148 may include the first electrode overlap region 149 and the second electrode overlap region 151 described above. The second electrode overlap region 151 includes the layer body region 141 of one layer and the layer periphery region 142 of the other layer.

[0247] like Figure 22 As shown, the second electrode 140 may include a first layer 140A, a second layer 140B, and a third layer 140C. In Figure 22 In the example shown, one first layer 140A, one second layer 140B, and two third layers 140C are arranged at the vertices of the rhombus. The two third layers 140C are arranged diagonally along the first direction G1 of the element. These four layers 140A, 140B, and 140C, arranged in this way, together with the first electrode 120 and the organic layer 130 described above, constitute one pixel. Figure 22 In the example shown, the pixels in the first display area 101 and the pixels in the second display area 102 are constructed in the same way.

[0248] like Figure 23 and Figure 24 As shown, the second electrode overlap region 151 includes the region where the main body region 141 of the first layer 140A overlaps with the surrounding region 142 of the second layer 140B, and the region where the surrounding region 142 of the first layer 140A overlaps with the main body region 141 of the second layer 140B. For example, the second electrode overlap region 151 includes the region where the main body region 141 of the first layer 140A overlaps with the surrounding region 142 of the third layer 140C, and the region where the surrounding region 142 of the first layer 140A overlaps with the main body region 141 of the third layer 140C. For example, the second electrode overlap region 151 includes the region where the main body region 141 of the second layer 140B overlaps with the surrounding region 142 of the third layer 140C, and the region where the surrounding region 142 of the second layer 140B overlaps with the main body region 141 of the third layer 140C. The main body regions 141 of each layer 140A to 140C do not overlap.

[0249] like Figure 24 As shown, by overlapping the main body region 141 with the surrounding region 142, the thickness tb of the second electrode 140 in the electrode overlap region 148 can be increased. This increases the cross-sectional area of ​​the electrode overlap region 148 and reduces its resistance. However, by ensuring that the main body regions 141 do not overlap, the thickness tb of the second electrode 140 in the electrode overlap region 148 can be less than twice the thickness ta of the main body region 141.

[0250] use Figure 25 and Figure 26 For use in forming Figures 22-24The mask group 56 of the second electrode 140 shown will be described. Figure 26 As an example, the overlapping area 59 of the holes formed by the first mask 50A and the second mask 50B is shown.

[0251] like Figure 25 and Figure 26 As shown, the hole overlap region 59 of the mask stack 55 may include the first hole overlap region 60 and the second hole overlap region 62 described above. The second hole overlap region 62 includes the effective region 57 of the through hole 53 of one mask 50 included in the mask stack 55 and the surrounding region 58 of the through hole 53 of the other mask 50.

[0252] For example, the second hole overlap region 62 includes the region where the effective region 57 of the first through hole 53A overlaps with the surrounding region 58 of the second through hole 53B, and the region where the surrounding region 58 of the first through hole 53A overlaps with the effective region 57 of the second through hole 53B. For example, the second hole overlap region 62 includes the region where the effective region 57 of the first through hole 53A overlaps with the surrounding region 58 of the third through hole 53C, and the region where the surrounding region 58 of the first through hole 53A overlaps with the effective region 57 of the third through hole 53C. For example, the second hole overlap region 62 includes the region where the effective region 57 of the second through hole 53B overlaps with the surrounding region 58 of the third through hole 53C, and the region where the surrounding region 58 of the second through hole 53B overlaps with the effective region 57 of the third through hole 53C. The effective regions 57 of each mask 50 do not overlap with each other.

[0253] By including the first hole overlapping region 60 and the second hole overlapping region 62 in the through region 55A, a [structure / form] can be formed. Figure 23 and Figure 24 The electrode overlap region 148 of the second electrode 140 is shown. The first hole overlap region 60 corresponds to the first electrode overlap region 149 described above, and the second hole overlap region 62 corresponds to the second electrode overlap region 151 described above.

[0254] use Figure 27 The second variation will be explained. Figure 27 This is a cross-sectional view showing a modified example of the effective area 57 and the surrounding area 58 of the mask 50.

[0255] exist Figure 27 In the example shown, the area delineation line L is defined by the direction in which the vapor-deposited material 7 flies in.

[0256] More specifically, such as Figure 27As shown, the angle of arrival θ1 is greater than the mask angle θ2. In this case, the surrounding area 58, which is easily affected by shadows, depends on the angle of arrival θ1. Therefore, the angle θ of the area delineation line L can be the angle of arrival θ1. In this case, the area delineation line L becomes a line that passes through the connecting part 533 and forms an angle θ1 with the first surface 51a. Figure 27 In the example shown, the width of the surrounding region 58 is represented by the cross-sectional height h / tanθ1.

[0257] Figure 27 The angle θ of the line L delineated in the region shown can be applied to... Figure 15 The area shown is defined by the same numerical example of the angle θ of the straight line L.

[0258] use Figures 28-33 The third variation will be explained. Figure 28 This is a top view showing a modified example of the second electrode. Figure 29 This is a top view showing the overlapping area of ​​the electrodes. Figure 30 This is a top view showing the first mask. Figure 31 This is a top view showing the second mask. Figure 32 This is a top view showing the mask layer. Figure 33 This is a top view showing the overlapping area of ​​the holes in the mask layer.

[0259] Figure 28 In the example shown, the second electrode 140 may comprise a first layer 140A, a second layer 140B, and a third layer 140C. The first layer 140A and the third layer 140C are formed by vapor deposition using a first mask 50D. The second layer 140B is formed by vapor deposition using a second mask 50E.

[0260] Layer 1 140A and Layer 3 140C have a generally regular octagonal outline. Layer 1 140A and Layer 3 140C may have the same planar outline. Layer 2 140B may have a different planar outline than Layer 1 140A and Layer 3 140C. Layer 2 140B may have a generally octagonal outline along its length. Figure 28 The length direction of the second layer 140B shown is along the second direction G2 of the element. Alternatively, the second layer 140B may have an outline having a generally quadrilateral shape along the length direction G2 of the element. In this case, the four corners of the outline of the second layer 140B may be chamfered.

[0261] In the first display area 101, a first layer 140A, a second layer 140B, and a third layer 140C can be repeatedly arranged along the first component direction G1 and the second component direction G2. Figure 28In the example shown, one first layer 140A, two second layers 140B, and one third layer 140C are arranged at the vertices of the quadrilateral. Two second layers 140B are arranged on the diagonals. These four layers 140A, 140B, 140C, arranged in this way, together with the first electrode 120 and the organic layer 130 mentioned above, constitute one pixel.

[0262] In the second display area 102, a first layer 140A, a second layer 140B, and a third layer 140C can be repeatedly arranged along the first component direction G1 and the second component direction G2. Figure 28 In the example shown, the pixels in the second display area 102 have a configuration in which one of the two second layers 140B constituting one pixel in the first display area 101 is removed. The pixels in the second display area 102 are arranged at intervals in the first element direction G1, and a transmissive region 104 is inserted between adjacent pixels in the first element direction G1. The pixels in the second display area 102 are repeatedly arranged in the second element direction G2.

[0263] like Figure 29 As shown, the electrode overlap region 148 of the second electrode 140 can be with Figure 7 and Figure 8 The example shown also includes a first electrode overlap region 149 that overlaps with the surrounding regions 142 of each layer. The non-overlapping region 150 may be located between the first electrode overlap region 149 and the main layer region 141.

[0264] use Figures 30-33 For use in forming Figure 28 The mask group 56 of the second electrode 140 shown will be described. Figure 30 This is a top view showing the third region M3 and the fourth region M4 of the mask on the first surface 51a of the first mask 50D. Figure 31 This is a top view showing the third region M3 and the fourth region M4 of the mask on the first surface 51a of the second mask 50E. Figure 32 This is a top view showing the overlapping area 59 of the holes. Figure 33 This is a cross-sectional view showing the overlapping area 59 of the holes.

[0265] The mask group 56 in the third variation includes a first mask 50D and a second mask 50E. The mask stack 55 in the third variation is a stack obtained by overlapping the first mask 50D and the second mask 50E.

[0266] like Figure 30As shown, the first mask 50D includes a first through hole 53A, a third through hole 53C, and a first shielding region 54D. The first through hole 53A and the third through hole 53C are arranged in the first direction D1 and the second direction D2 of the mask. In the third region M3 and the fourth region M4 of the mask, the first through hole 53A is positioned corresponding to the first layer 140A of the second electrode 140, and the third through hole 53C is positioned corresponding to the third layer 140C of the second electrode 140. Figures 30-33 The outlines of the through holes 53A to 53C shown in the top view are the outlines of the through holes 53A to 53C in the first surface 51a of masks 50D and 50E. The outlines of the through holes 53A to 53C in the first surface 51a correspond to the outlines of the first recess 531 in the first surface 51a.

[0267] like Figure 31 As shown, the second mask 50E includes a second through-hole 53B and a second shielding region 54E. The second through-hole 53B is arranged in the first direction D1 and the second direction D2 of the mask. In the third region M3 and the fourth region M4 of the mask, the second through-hole 53B is positioned corresponding to the second layer 140B of the second electrode 140.

[0268] The first through hole 53A and the third through hole 53C have a generally regular octagonal profile. The first through hole 53A and the third through hole 53C may have the same planar profile. The second through hole 53B may have a different planar profile than the first through hole 53A and the third through hole 53C. The second through hole 53B may have a generally octagonal profile in the longitudinal direction. Figure 31 The length direction of the second through hole 53B shown is along the second direction D2 of the mask. Alternatively, the second through hole 53B may have a profile having a generally quadrilateral shape along the length direction D2 of the mask. In this case, the four corners of the profile of the second through hole 53B may be chamfered.

[0269] like Figure 32 As shown, the mask laminate 55 has a through region 55A. When viewed from above, the through region 55A includes at least one of the through holes 53A to 53C of each mask 50D and 50E. That is, when viewed from above, the through region 55A overlaps with at least any one of the through holes 53A to 53C of each mask 50D and 50E.

[0270] like Figure 32 As shown, the through area 55A can be connected with... Figure 19 The example shown also includes the hole overlap region 59. (As shown...) Figure 33 As shown, the overlapping area 59 of the holes can be with Figure 20 and Figure 21The example shown also includes the first hole overlapping region 60. The non-overlapping region 61 can be located between the first hole overlapping region 60 and the effective region 57.

[0271] Several variations of the above embodiments have been described, and of course, multiple variations can also be appropriately combined for application.

Claims

1. A mask assembly comprising two or more masks, The mask has a shielding area and a through hole. A mask stack formed by two or more of the aforementioned masks has a through region that overlaps with the through-hole when viewed along the normal direction of the mask. When viewed along the normal direction of the mask, the mask stack comprises: a first mask region including the through region having a first aperture ratio; and a second mask region including the through region having a second aperture ratio less than the first aperture ratio. The mask includes a first surface and a second surface located on the opposite side of the first surface. The through hole includes: a first recess located on the first surface side, a second recess located on the second surface side, and a connecting portion connecting the first recess and the second recess, wherein the size of the second recess is larger than the size of the first recess. When viewed using a cross-section along the normal direction, the region delineation line is defined as a straight line passing through the connecting portion and forming an angle θ with the first surface. This region delineation line intersects the first surface at a first intersection point. An effective region is delineated at a location closer to the inside of the through-hole than the first intersection point, and a surrounding region is delineated at a location closer to the outside of the through-hole than the first intersection point. The angle θ is between 35° and 70°. The through region in the second region of the mask includes the overlapping area of ​​the through holes of the two masks. The hole overlap region includes the first hole overlap region, which is the area surrounding the through holes of the two masks contained in the mask stack.

2. The mask assembly as claimed in claim 1, wherein, The overlapping area of ​​the first hole is spaced apart from the effective area of ​​the through hole of the mask.

3. The mask assembly as claimed in claim 1, wherein, The hole overlap region includes a second hole overlap region in which the effective region of the through hole of one of the masks contained in the mask stack overlaps with the surrounding region of the through hole of another mask.

4. The mask assembly as described in any one of claims 1 to 3, wherein, The defined area is connected to any point on the wall of the second recess by a straight line.

5. The mask assembly as described in any one of claims 1 to 3, wherein, In each of the first and second regions of the mask, two or more of the through holes are located in the mask.

6. A method for manufacturing an organic device, comprising: In the second electrode formation step, the second electrode is formed on the organic layer of the first electrode on the substrate using the mask set according to any one of claims 1 to 3. The second electrode forming process includes: The process of forming the first layer of the second electrode by using the vapor deposition method of the mask; and The process of forming the second layer of the second electrode by using the vapor deposition method of other masks.

7. The method for manufacturing an organic device as described in claim 6, wherein, Let θ1 be the angle formed between the incoming direction of the vapor-deposited material forming the second electrode and the first surface of the mask, and let θ2 be the angle formed between the straight line passing through the connecting portion and connecting to the second recess and the first surface. When the angle θ1 is greater than the angle θ2, the angle θ of the straight line used to delineate the region is the angle θ1.

8. An organic device obtained by the manufacturing method of the organic device according to claim 6 or 7, said organic device comprising: substrate; The first electrode is located on the substrate; The organic layer located on the first electrode; and The second electrode is located on the organic layer. When viewed along the normal direction of the substrate, the organic device includes: a first display area comprising the second electrode having a first occupancy; and a second display area comprising the second electrode having a second occupancy less than the first occupancy. The second electrode comprises two or more distinct layers located on the organic layer. The layer comprises a main layer region and a surrounding region having a thickness thinner than that of the main layer region. The second electrode in the second display area comprises two overlapping electrode areas of the overlapping layers. The electrode overlap region includes: a first electrode overlap region where the layer's surrounding area overlaps; and a second electrode overlap region where the layer body region of one layer overlaps with the layer surrounding area of ​​another layer.

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