Switch based on substrate integrated fin-wire structure

Abstract

The present invention discloses a switch based on a substrate integrated fin line structure, which belongs to the field of radio frequency technology. The switch based on the substrate integrated fin line structure described in the present invention has the advantages of low manufacturing cost, simple manufacturing method, the ability to form a self-packaged whole, and self-contained low-frequency filtering effect; it is realized by laminating and pressing a multi-layer dielectric substrate, and has the advantages of low loss, weak dispersion, simple structure, small size, low cost, self-packaged, and easy integration with other radio frequency circuits. Compared with the existing fin line structure composed of a multi-layer dielectric substrate, the present invention solves the problem of loading various devices and functional modules on the fin line, expands the functions realized by the substrate integrated fin line, and increases the application scenarios; the three-dimensional functional structure is changed into a two-dimensional functional structure, which is conducive to directly designing the fin line functional area in the integrated circuit, and can effectively combine the circuit with the substrate integrated fin line.

Description

Technical Field

[0001] The present invention belongs to the field of radio frequency technology, and in particular relates to a switch based on a substrate integrated fin line structure. Background Art

[0002] With the development of microwave technology and millimeter wave circuits, in order to achieve the miniaturization of circuit structure and high integration of RF circuits, multilayer circuit technology has developed rapidly and has been widely studied and applied in various communication equipment. Multilayer circuits can realize the integration of active and passive circuits, as well as the miniaturization of communication system equipment. In general microstrip fin transition structures, metal waveguides are required, and the microstrip fin transition structure needs to be fixed to the vertical H plane of the waveguide center. This traditional transition structure is costly, difficult to install, and not conducive to integration with active devices. In the transmission line structure, the fin line is a quasi-planar structure embedded in the E plane of the rectangular waveguide. The propagation mode of the fin line is a hybrid mode, with low loss, weak dispersion, and large single-mode bandwidth. On the other hand, the transmission cutoff frequency of the fin line structure is lower than the cutoff frequency of the packaged waveguide, so the required size is smaller than that of the traditional waveguide and has some advantages of the waveguide. However, the fin line needs to process the mechanical cavity for closure, and a groove needs to be left to install the fin line to meet mechanical support and electromagnetic shielding. Therefore, additional assembly work is required to assemble it with the waveguide mechanically before it can work. Nowadays, microwave components have high requirements for integration. The fin-wire structure in the waveguide is difficult to integrate with other active components, and it is also difficult to control the electromagnetic waves it transmits. The traditional fin-wire structure metal cavity is large in volume, and the volume is relatively large after integration with the circuit board, which makes it difficult to miniaturize the RF component. The existing fin-wire structure needs to be installed in a rectangular waveguide, which is difficult to process, has a high manufacturing cost, and is not easy to integrate with other circuits and other electronic components.

[0003] The prior art discloses a method of constructing a fin line structure in a structure in which a multilayer dielectric substrate is superimposed by means of discontinuous vias, indicating that it is feasible to use a multilayer dielectric substrate to form a fin line. However, in this structure, there is only one transmission structure of the fin line, and the possibility of realizing the conversion structure of other transmission forms to the fin line in the multilayer dielectric substrate has not been verified, resulting in the problem of whether it can be applied to the circuit system not being solved. In addition, since it uses discontinuous vias as signal transmission constraints, the processing accuracy of the multilayer board needs to be high enough to meet the requirement that all corresponding vias must be connected to it to avoid affecting the transmission performance. Compared with traditional metal devices, this cannot effectively reduce the assembly difficulty and finishing cost of the structure. Not only that, the signal port in this structure still uses a standard metal waveguide and is perpendicular to the circuit plane. This defect causes the fin line structure composed of a multilayer dielectric substrate to be unable to be integrated into the circuit, and a vertical signal port must be left, which causes huge problems in the space utilization of the circuit. Finally, since the structure uses a dielectric substrate that is not hollowed out, various devices and functional modules, such as diodes, cannot be loaded in the fin line structure, which greatly reduces the functional content that the fin line structure can achieve. In summary, the existing structure cannot simultaneously meet the requirements of low assembly cost, lower precision requirements, a wide range of application scenarios and high efficiency combined with circuits. Summary of the invention

[0004] The purpose of the present invention is to overcome the defects of the above-mentioned prior art and provide a switch based on a substrate integrated fin line structure, which can realize the riveting process of a multi-layer circuit board to form a microstrip to fin line switch structure, solve the technical problems of the existing fin line structure requiring mechanical cavity processing and additional manual assembly, and the integration of the fin line structure with other planar circuits.

[0005] The technical problem proposed by the present invention is solved in this way:

[0006] A switch based on a substrate integrated fin line structure is axially symmetrically distributed, comprising a first circuit board, a second circuit board, a third circuit board, a fourth circuit board and a fifth circuit board which are closely attached to each other from top to bottom, wherein the circuit board comprises a rectangular dielectric substrate and metal layers printed on the upper and lower surfaces of the dielectric substrate;

[0007] Two rows of metal strip-shaped vias are arranged in parallel along the long sides of the rectangular dielectric substrate, penetrate the five-layer circuit board, and are located to the left of the center point of the dielectric substrate. The space within the straight line range of the two rows of metal strip-shaped vias is used as a transmission functional area; on the dielectric substrates of the first circuit board, the second circuit board, and the fifth circuit board, signal ports are respectively opened at the short sides of the dielectric substrates at both ends of the metal strip-shaped vias, and a DC power supply port is opened at the center of the long side of the dielectric substrate on the right side of the metal strip-shaped vias. The DC power supply port and the area between the DC power supply port and the adjacent metal strip-shaped vias are used as a DC power supply area; on the dielectric substrates of the second circuit board and the fourth circuit board, the space within the range of the two rows of metal strip-shaped vias is completely hollowed out to form a hollow area;

[0008] The upper surface of the dielectric substrate of the first circuit board is entirely covered with copper, and the lower surface is entirely covered with copper except for the transmission functional area; the upper surface of the dielectric substrate of the second circuit board is entirely covered with copper except for the transmission functional area, and the lower surface is entirely covered with copper except for the transmission functional area and the DC power supply area; the upper surface of the dielectric substrate of the third circuit board is entirely covered with copper except for the transmission functional area and the DC power supply area, and the lower surface is entirely covered with copper; the upper surface and the lower surface of the dielectric substrate of the fourth circuit board are entirely covered with copper except for the transmission functional area; the upper surface of the dielectric substrate of the fifth circuit board is entirely covered with copper except for the transmission functional area, and the lower surface is entirely covered with copper;

[0009] On the upper surface of the dielectric substrate of the third circuit board, a step filter structure is provided in the DC power supply area, and a microstrip-fin-microstrip structure is provided in the transmission function area, the step filter structure is used to supply DC power to the microstrip-fin-microstrip structure; the microstrip-fin-microstrip structure is axisymmetric, including a first microstrip segment, a first impedance transformation segment, a microstrip-fin transition segment, a fin function segment, a fin-microstrip transition segment, a second impedance transformation segment, and a second microstrip segment; a plurality of PIN tubes are symmetrically arranged in the microstrip-fin transition segment and the fin function segment, and all the PIN tubes have the same direction;

[0010] On the lower surface of the dielectric substrate of the third circuit board, a defective ground structure is etched in the inner space of two rows of long metal vias; the defective ground structure is axially symmetrical, spanning the microstrip-fin line transition section, the fin line functional section, and the fin line-microstrip transition section, and is a trapezoidal structure, and the hypotenuse of the trapezoid is a curve or a straight line.

[0011] Furthermore, the first microstrip segment includes a first microstrip line, one end of the first microstrip line is located at the edge of the transmission functional area, and the other end extends into the transmission functional area; the first impedance transformation segment includes a second microstrip line and a third microstrip line connected in sequence, the two ends of the second microstrip line are respectively connected to the first microstrip line and the third microstrip line, and the other end of the third microstrip line extends into the transmission functional area; the microstrip-fin line transition segment includes a gradient microstrip line, a semicircular de-resonance structure and a fin line gradient line; the left edge of the gradient microstrip line is from the left end of the microstrip-fin line transition segment to the third microstrip line; The left end curve of the microstrip line extends, and the right edge is flush with the right side of the third microstrip line; the center of the semicircular de-resonance structure is located at the left long metal via hole, which bulges to the right; the fin line gradient line is a right-angled trapezoidal structure, with a gap between the right side of the gradient microstrip line, and the right edge is connected to the right long metal via hole, and the hypotenuse of the right-angled trapezoid is a sine function curve; the fin line functional section is a fin line etched with a comb-like structure; a number of PIN tubes are symmetrically arranged at the gap between the microstrip-fin line transition section and the fin line functional section, and all PIN tubes have the same direction.

[0012] Furthermore, at the two signal ports, the first microstrip segment and the second microstrip segment are respectively connected to an external circuit or an SMA adapter, and the DC power supply area controls the on or off state of the switch based on the substrate integrated fin line structure.

[0013] Furthermore, the first microstrip line, the second microstrip line and the third microstrip line have different widths.

[0014] Furthermore, the ladder filter structure is composed of several microstrip lines of different widths connected in sequence, and direct current is supplied to the fin line through the metal strip.

[0015] Furthermore, several circular metal through holes are opened outside the DC power supply area, signal port and transmission function area of ​​the five-layer circuit board for fixing the five-layer circuit board; the signal port and DC power supply area of ​​the third circuit board and the fourth circuit board respectively have two metal through holes for fixing the signal adapter, which serves as the input port, output port and DC power supply port of the switch.

[0016] Furthermore, the dielectric material selected for the dielectric substrate of the third circuit board is Rogers RT / duroid 5880, with a relative dielectric constant of 2.2 and a dielectric substrate thickness of 0.254 mm; the dielectric material selected for the dielectric substrates of other circuit boards is F4B, with a relative dielectric constant of 2.65 and a dielectric substrate thickness of 2 mm.

[0017] Furthermore, the on and off states of the switch are jointly determined by the positive and negative supply voltage of the DC power supply end and the positive and negative connection of the PIN tube; if the positive pole of the PIN tube is connected to one side of the DC power supply end, then when a forward voltage is input, the PIN tube is turned on and the switch is turned off, and when a reverse voltage is input, the PIN tube is turned off and the switch is turned on; if the negative pole of the PIN tube is connected to one side of the DC power supply end, then when a forward voltage is input, the PIN tube is turned off and the switch is turned on, and when a reverse voltage is input, the PIN tube is turned on and the switch is turned off.

[0018] The beneficial effects of the present invention are:

[0019] The switch based on substrate integrated fin line structure described in the present invention has the advantages of low manufacturing cost, simple manufacturing method, ability to form a self-packaged whole, and inherent low-frequency filtering effect; it can be realized by laminating and pressing a multi-layer dielectric substrate, effectively overcoming the shortcomings of mechanical cavity processing, bulky structure, and high cost required by existing metal device circuits, and has the advantages of low loss, weak dispersion, simple structure, small size, low cost, self-packaged, and easy integration with other radio frequency circuits.

[0020] Compared with the existing fin line structure composed of a multi-layer dielectric substrate, the substrate integrated fin line structure of the present invention solves the problem of loading various devices and functional modules on the fin line, expands the functions realized by the substrate integrated fin line, and increases the application scenarios; converting the three-dimensional functional structure into a two-dimensional functional structure is conducive to directly designing the fin line functional area in the integrated circuit, and can effectively combine the circuit with the substrate integrated fin line; the long strip via design used in the present invention also greatly reduces the processing accuracy requirements and assembly complexity of the dielectric substrate, effectively reducing the manufacturing cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 A side view of the overall structure of the switch based on the substrate integrated fin line structure of the present invention;

[0022] Figure 2 A schematic diagram of the upper and lower surfaces of the first-layer circuit board of the switch with substrate-integrated fin-line structure according to the present invention;

[0023] Figure 3 A schematic diagram of the upper and lower surfaces of the second-layer circuit board of the switch based on the substrate integrated fin line structure of the present invention;

[0024] Figure 4 It is a schematic diagram of the upper and lower surfaces of the third-layer circuit board structure of the switch based on the substrate integrated fin line structure of the present invention;

[0025] Figure 5 It is a schematic diagram of the upper and lower surfaces of the fourth-layer circuit board of the switch based on the substrate integrated fin line structure of the present invention;

[0026] Figure 6A schematic diagram of the upper and lower surfaces of the fifth-layer circuit board of the switch based on the substrate integrated fin line structure of the present invention;

[0027] Figure 7 A schematic diagram of the division of the upper and lower surface sections of the third layer circuit board in the switch of the present invention;

[0028] Figure 8 It is a schematic diagram of the on-state simulation result of the substrate-integrated fin-line structure switch according to the embodiment;

[0029] Fig. 9 It is a schematic diagram of the simulation results of the closed state of the substrate-integrated fin-line structure switch described in the embodiment. DETAILED DESCRIPTION

[0030] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0031] This embodiment provides a switch based on a substrate integrated fin line structure, and its overall structure side view is as follows Figure 1 As shown, it is axially symmetrically distributed and includes a first circuit board, a second circuit board, a third circuit board, a fourth circuit board and a fifth circuit board that are tightly fitted from top to bottom. The circuit board includes a rectangular dielectric substrate and metal layers printed on the upper and lower surfaces of the dielectric substrate.

[0032] Two rows of long metal strip vias are arranged in parallel along the long sides of the rectangular dielectric substrate, penetrate the five-layer circuit board, and are located to the left of the center point of the dielectric substrate. The space within the straight line range of the two rows of long metal strip vias is used as a transmission functional area; on the dielectric substrates of the first circuit board, the second circuit board and the fifth circuit board, signal ports are respectively opened at the short sides of the dielectric substrates at the beginning and end of the long metal strip vias, and a DC power supply port is opened at the center of the long side of the dielectric substrate on the right side of the long metal strip vias. The DC power supply port and the area between the DC power supply port and the adjacent long metal strip vias are used as a DC power supply area; on the dielectric substrates of the second circuit board and the fourth circuit board, the space within the range of the two rows of long metal strip vias is completely hollowed out to form a hollow area.

[0033] The upper and lower surfaces of the dielectric substrate of the first circuit board are as follows Figure 2 As shown, the upper surface is entirely covered with copper, and the lower surface is entirely covered with copper except for the transmission functional area; the upper and lower surfaces of the dielectric substrate of the second circuit board are as shown Figure 3 As shown, the upper surface is all copper-clad except the transmission functional area, and the lower surface is all copper-clad except the transmission functional area and the DC power supply area; the upper and lower surfaces of the dielectric substrate of the third circuit board are as shown Figure 4 As shown, the upper surface is entirely covered with copper except for the transmission function area and the DC power supply area, and the lower surface is entirely covered with copper; the upper and lower surfaces of the dielectric substrate of the fourth circuit board are as shown Figure 5 As shown, the upper and lower surfaces are all covered with copper except for the transmission functional area; the upper and lower surfaces of the dielectric substrate of the fifth circuit board are as shown Figure 6 As shown, the upper surface is entirely covered with copper except for the transmission functional area, and the lower surface is entirely covered with copper.

[0034] like Figure 7 As shown, on the upper surface of the dielectric substrate of the third circuit board, a ladder filter structure is provided in the DC power supply area, and a microstrip-fin line-microstrip structure is provided in the transmission function area, the ladder filter structure is used to supply DC power to the microstrip-fin line-microstrip structure; the microstrip-fin line-microstrip structure is axisymmetric, including a first microstrip section, a first impedance transformation section, a microstrip-fin line transition section, a fin line functional section, a fin line-microstrip transition section, a second impedance transformation section and a second microstrip section; the first microstrip section includes a first microstrip line, one end of the first microstrip line is located at the edge of the transmission function area, and the other end extends into the transmission function area; the first impedance transformation section includes a second microstrip line and a third microstrip line connected in sequence, the two ends of the second microstrip line are respectively connected to the first microstrip line and the third microstrip line, and the third microstrip line The other end extends to the inside of the transmission functional area; the microstrip-fin line transition section includes a gradient microstrip line, a semicircular de-resonance structure and a fin line gradient line; the left edge of the gradient microstrip line extends from the left end of the microstrip-fin line transition section to the left end of the third microstrip line in a curve, and the right edge is flush with the right side of the third microstrip line; the center of the semicircular de-resonance structure is located at the left metal long strip via hole and bulges to the right; the fin line gradient line is a right-angled trapezoidal structure, with a gap between the right side of the gradient microstrip line, the right edge is connected to the right metal long strip via hole, and the hypotenuse of the right-angled trapezoid is a sine function curve; the fin line functional section is a fin line etched with a comb-like structure; a number of PIN tubes are symmetrically arranged at the gap between the microstrip-fin line transition section and the fin line functional section, and all PIN tubes have the same direction.

[0035] At the two signal ports, the first microstrip segment and the second microstrip segment are respectively connected to the external circuit or the SMA adapter, and the DC power supply area controls the on or off state of the switch based on the substrate integrated fin line structure, thereby achieving the purpose of integrating the substrate integrated fin line switch into the circuit and realizing its normal function.

[0036] The first microstrip line, the second microstrip line, and the third microstrip line have different widths.

[0037] On the lower surface of the dielectric substrate of the third circuit board, a defective ground structure is etched in the inner space of two rows of long metal vias; the defective ground structure is axially symmetrical, spanning the microstrip-fin line transition section, the fin line functional section, and the fin line-microstrip transition section, and is a trapezoidal structure, and the hypotenuse of the trapezoid is a curve or a straight line.

[0038] The ladder filter structure is composed of several microstrip lines of different widths connected in sequence, and direct current is supplied to the fin line through metal strips.

[0039] Several circular metal through holes are opened outside the DC power supply area, signal port and transmission function area of ​​the five-layer circuit board for fixing the five-layer circuit board. The signal port and DC power supply area of ​​the third circuit board and the fourth circuit board respectively have two metal through holes for fixing the signal adapter, which serves as the input port, output port and DC power supply port of the substrate integrated fin line structure switch described in this embodiment.

[0040] In this embodiment, the dielectric material selected for the dielectric substrate of the third circuit board is Rogers RT / duroid 5880, with a relative dielectric constant of 2.2 and a dielectric substrate thickness of 0.254 mm; the dielectric material selected for the dielectric substrates of other circuit boards is F4B, with a relative dielectric constant of 2.65 and a dielectric substrate thickness of 2 mm.

[0041] The substrate integrated fin line switch of the present invention uses a fin line structure in the form of parallel PIN tubes to realize the switch function. An even number of diodes are connected across the slots and are axially symmetrically distributed. The off-axis position is uncertain and is subject to the simulation optimization result. The more diodes there are, the better the isolation when the switch is turned off, but the greater the insertion loss when it is turned on; the fewer diodes there are, the smaller the insertion loss when the switch is turned on, but the isolation is reduced when the switch is turned off.

[0042] The performance characteristics of the switch described in the present invention are mainly reflected in the connectivity of the two signal ports when turned on, that is, the insertion loss; and the degree of isolation of the two ports when turned off, that is, the isolation degree. The on and off states of the switch are determined by the positive and negative supply voltage of the DC power supply end and the positive and negative connection of the PIN tube. If the positive pole of the PIN tube is connected to one side of the DC power supply end, when the forward voltage is input, the PIN tube is turned on and the fin line switch is turned off. When the reverse voltage is input, the PIN tube is turned off and the fin line switch is turned on; if the negative pole of the PIN tube is connected to one side of the DC power supply end, when the forward voltage is input, the PIN tube is turned off and the fin line switch is turned on. When the reverse voltage is input, the PIN tube is turned on and the fin line switch is turned off. The installation method of the PIN tube will not affect the on and off performance of the substrate integrated fin line switch.

[0043] The schematic diagram of the simulation result of the on-state and the schematic diagram of the simulation result of the off-state based on the substrate integrated fin line structure switch described in this embodiment are as follows: Figure 8 and Fig. 9 dB(S(1,1)) is its reflection loss, dB(S(1,2)) is its insertion loss, and its frequency band can cover 8.0GHz-12.0GHz. Its operating frequency can be increased by reducing the corresponding size. Figure 7It can be seen that by loading a positive or negative voltage to the DC power supply area, different voltage differences can be generated on the left and right sides of the fin line, thereby controlling the on and off of the PIN tube. In the present invention, the positive electrode of the PIN tube is connected to one side of the DC power supply end, that is, when a positive voltage is input, the PIN tube is turned on and the fin line switch is turned off. When a reverse voltage is input, the PIN tube is turned off and the fin line switch is turned on.

Claims

1. A switch based on a substrate integrated fin line structure, characterized in that: The circuit boards are axially symmetrically distributed and include a first circuit board, a second circuit board, a third circuit board, a fourth circuit board and a fifth circuit board which are closely attached to each other from top to bottom. The circuit boards include a rectangular dielectric substrate and metal layers printed on the upper and lower surfaces of the dielectric substrate. Two rows of metal strip-shaped vias are arranged in parallel along the long sides of the rectangular dielectric substrate, penetrate the five-layer circuit board, and are located to the left of the center point of the dielectric substrate. The space within the straight line range of the two rows of metal strip-shaped vias is used as a transmission functional area; on the dielectric substrates of the first circuit board, the second circuit board, and the fifth circuit board, signal ports are respectively opened at the short sides of the dielectric substrates at both ends of the metal strip-shaped vias, and a DC power supply port is opened at the center of the long side of the dielectric substrate on the right side of the metal strip-shaped vias. The DC power supply port and the area between the DC power supply port and the adjacent metal strip-shaped vias are used as a DC power supply area; on the dielectric substrates of the second circuit board and the fourth circuit board, the space within the range of the two rows of metal strip-shaped vias is completely hollowed out to form a hollow area; The upper surface of the dielectric substrate of the first circuit board is entirely covered with copper, and the lower surface is entirely covered with copper except for the transmission functional area; the upper surface of the dielectric substrate of the second circuit board is entirely covered with copper except for the transmission functional area, and the lower surface is entirely covered with copper except for the transmission functional area and the DC power supply area; the upper surface of the dielectric substrate of the third circuit board is entirely covered with copper except for the transmission functional area and the DC power supply area, and the lower surface is entirely covered with copper; the upper surface and the lower surface of the dielectric substrate of the fourth circuit board are entirely covered with copper except for the transmission functional area; the upper surface of the dielectric substrate of the fifth circuit board is entirely covered with copper except for the transmission functional area, and the lower surface is entirely covered with copper; On the upper surface of the dielectric substrate of the third circuit board, a step filter structure is provided in the DC power supply area, and a microstrip-fin-microstrip structure is provided in the transmission function area, the step filter structure is used to supply DC power to the microstrip-fin-microstrip structure; the microstrip-fin-microstrip structure is axisymmetric, including a first microstrip segment, a first impedance transformation segment, a microstrip-fin transition segment, a fin function segment, a fin-microstrip transition segment, a second impedance transformation segment, and a second microstrip segment; a plurality of PIN tubes are symmetrically arranged in the microstrip-fin transition segment and the fin function segment, and all the PIN tubes have the same direction; On the lower surface of the dielectric substrate of the third circuit board, a defective ground structure is etched in the inner space of two rows of long metal vias; the defective ground structure is axially symmetrical, spanning the microstrip-fin line transition section, the fin line functional section, and the fin line-microstrip transition section, and is a trapezoidal structure, and the hypotenuse of the trapezoid is a curve or a straight line.

2. The switch based on substrate integrated fin line structure according to claim 1, characterized in that: The first microstrip segment includes a first microstrip line, one end of which is located at the edge of the transmission functional area, and the other end of which extends into the transmission functional area; the first impedance transformation segment includes a second microstrip line and a third microstrip line connected in sequence, two ends of the second microstrip line are respectively connected to the first microstrip line and the third microstrip line, and the other end of the third microstrip line extends into the transmission functional area; The microstrip-fin line transition section includes a gradient microstrip line, a semicircular de-resonance structure and a fin line gradient line; The left edge of the gradient microstrip line extends from the left end of the microstrip-fin line transition section to the left end of the third microstrip line in a curve, and the right edge is flush with the right side of the third microstrip line; the center of the semicircular de-resonance structure is located at the left long metal via hole and bulges to the right; the fin line gradient line is a right-angled trapezoidal structure, with a gap between the right side of the gradient microstrip line, the right edge is connected to the right long metal via hole, and the hypotenuse of the right-angled trapezoid is a sine function curve; the fin line functional section is a fin line etched with a comb-like structure; a number of PIN tubes are symmetrically arranged at the gap between the microstrip-fin line transition section and the fin line functional section, and all PIN tubes have the same direction.

3. The switch based on substrate integrated fin line structure according to claim 1, characterized in that: At the two signal ports, the first microstrip segment and the second microstrip segment are respectively connected to an external circuit or an SMA adapter, and the DC power supply area controls the on or off state of the switch based on the substrate integrated fin line structure.

4. The switch based on substrate integrated fin line structure according to claim 2, characterized in that: The first microstrip line, the second microstrip line, and the third microstrip line have different widths.

5. The switch based on substrate integrated fin line structure according to claim 1, characterized in that: The ladder filter structure is composed of several microstrip lines of different widths connected in sequence, and direct current is supplied to the fin line through metal strips.

6. The switch based on substrate integrated fin line structure according to claim 1, characterized in that: Several circular metal through holes are opened outside the DC power supply area, signal port and transmission function area of ​​the five-layer circuit board for fixing the five-layer circuit board; the signal port and DC power supply area of ​​the third circuit board and the fourth circuit board respectively have two metal through holes for fixing the signal adapter, which serves as the input port, output port and DC power supply port of the switch.

7. The switch based on substrate integrated fin line structure according to claim 1, characterized in that: The dielectric material selected for the dielectric substrate of the third circuit board is Rogers RT / duroid 5880, with a relative dielectric constant of 2.2 and a dielectric substrate thickness of 0.254 mm; the dielectric material selected for the dielectric substrates of other circuit boards is F4B, with a relative dielectric constant of 2.65 and a dielectric substrate thickness of 2 mm.

8. The switch based on substrate integrated fin line structure according to claim 1, characterized in that: The on and off states of the switch are determined by the positive and negative supply voltage of the DC power supply end and the positive and negative connection of the PIN tube; if the positive pole of the PIN tube is connected to one side of the DC power supply end, when a forward voltage is input, the PIN tube is turned on and the switch is turned off; when a reverse voltage is input, the PIN tube is turned off and the switch is turned on; if the negative pole of the PIN tube is connected to one side of the DC power supply end, when a forward voltage is input, the PIN tube is turned off and the switch is turned on; when a reverse voltage is input, the PIN tube is turned on and the switch is turned off.

Images