Apparatus for processing a substrate and method for processing a substrate

Abstract

The present invention relates to an apparatus for processing a substrate and a method for processing a substrate. The apparatus for processing a substrate includes: a first process chamber having a first processing space therein; a second process chamber having a second processing space therein; and an exhaust unit configured to exhaust the atmospheres of the first processing space and the second processing space, wherein the exhaust unit includes: an integrated exhaust pipeline in which a pressure reducing unit is installed; a first exhaust pipeline configured to connect a first point of the first process chamber and the integrated exhaust pipeline; a second exhaust pipeline configured to connect a second point of the first process chamber and the integrated exhaust pipeline; and an interference mitigation unit configured to mitigate exhaust interference between the first process chamber and the second process chamber.

Description

[0001] Cross - reference to related applications

[0002] This application claims the priority and benefit of Korean Patent Application No. 10 - 2021 - 0089963, filed with the Korean Intellectual Property Office on July 8, 2021, the entire content of which is incorporated herein by reference. Technical field

[0003] The present invention relates to an apparatus and a method for processing a substrate, and more particularly, to an apparatus and a method for processing a substrate that perform a developing process. Background art

[0004] To manufacture semiconductor devices, various processes such as cleaning, deposition, photolithography, etching, and ion implantation are performed. Among these processes, the photolithography process includes a coating process of forming a film by coating a photosensitive liquid (such as a photoresist) on the surface of a substrate, an exposure process of transferring a circuit pattern to the film formed on the substrate, and a developing process of selectively removing the film formed on the substrate in the exposed area or in the area opposite to the exposed area.

[0005] The developing process includes a substrate loading step of transporting the substrate into a process chamber, a developing solution supply step of supplying a developing solution onto the substrate, a puddle step of stopping the supply of the developing solution and maintaining the puddle of the developing solution supplied onto the substrate, and a substrate unloading step of taking the substrate out of the process chamber.

[0006] Figure 1 For schematically showing a graph of a general substrate processing apparatus, and Figure 2 For schematically showing a graph of the internal pressure of a process chamber in an apparatus for processing a substrate. Refer to Figure 1 and Figure 2 , the substrate processing apparatus 8000 includes a first process chamber 8100 and a second process chamber 8200. The first process chamber 8100 includes a first processing container 8110 having a processing space, a first support unit 8120 that supports and rotates the substrate W in the processing space, and a first discharge line 8130 that discharges the atmosphere of the processing space. The second process chamber 8200 includes a second processing container 8210 having a processing space, a second support unit 8220 that supports and rotates the substrate W in the processing space, and a second discharge line 8230 that discharges the atmosphere of the processing space.

[0007] The first process chamber 8100 and the second process chamber 8200 are positioned adjacent to each other, and a developing process is performed in the first process chamber 8100 and the second process chamber 8200. In the first process chamber 8100, a spin coating immersion step of stopping the supply of the developing solution, stopping the rotation of the first support unit 8120, or rotating the first support unit 8120 at a low speed and maintaining the developing solution on the substrate W is performed. In the second process chamber 8200, a substrate loading step of placing the substrate W on the second support unit 8200 is performed.

[0008] When performing the spin coating immersion step in the first process chamber 8100, it is important to maintain the internal pressure of the first process chamber 8100 in order to maintain the developing solution on the substrate W. As the substrate moves downward when being loaded into the second process chamber 8200, a reduced pressure of the air layer in the internal space of the second process chamber 8200 is generated. As a result, the emission amount discharged through the second discharge pipeline 8230 and the main discharge pipeline 8300 instantaneously increases together with the internal atmosphere of the second process chamber 8200. In the case where the emission amount from the second process chamber instantaneously increases, as at point A in Figure 2 the airflow discharged through the main discharge pipeline 8300 affects the internal pressure of the first process chamber 8100 positioned adjacent to the second process chamber 8200. When performing the spin coating immersion step in the first process chamber 8100, shaking is caused in the developing solution maintained on the substrate W, which leads to process defects. SUMMARY OF THE INVENTION

[0009] The present invention is dedicated to providing an apparatus for processing a substrate and a method for processing a substrate, which stably maintain the internal pressure of a process chamber in which a spin coating immersion step is performed.

[0010] The present invention is dedicated to providing an apparatus for processing a substrate and a method for processing a substrate, which reduce emission interference from a process chamber in which a substrate loading step is performed to another adjacent process chamber.

[0011] The present invention is dedicated to providing an apparatus for processing a substrate and a method for processing a substrate, which reduce emission interference from any one process chamber in which a substrate loading step is performed to another adjacent process chamber in which a spin coating immersion step is performed.

[0012] The problems to be solved by the present invention are not limited to the above problems, and those skilled in the art will clearly understand the problems not mentioned from this specification and the drawings.

[0013] Exemplary embodiments of the present invention provide an apparatus for processing a substrate. The apparatus for processing a substrate includes: a first process chamber having a first processing space therein; a second process chamber having a second processing space therein; and an exhaust unit configured to exhaust the atmospheres of the first processing space and the second processing space, wherein the exhaust unit includes: an integrated exhaust pipeline in which a pressure reducing unit is installed; a first exhaust pipeline configured to connect a first point of the first process chamber and the integrated exhaust pipeline; a second exhaust pipeline configured to connect a second point of the first process chamber and the integrated exhaust pipeline; and an interference mitigation unit configured to mitigate exhaust interference between the first process chamber and the second process chamber.

[0014] According to an exemplary embodiment, the interference mitigation unit may include a discharge unit positioned between the first point to which the first exhaust pipeline is connected and the second point to which the second exhaust pipeline is connected, in the integrated exhaust pipeline, to discharge some of the air flow in the integrated exhaust pipeline to the outside of the integrated exhaust pipeline.

[0015] According to an exemplary embodiment, the discharge unit may be arranged to discharge some of the air flow in the integrated exhaust pipeline to the atmosphere.

[0016] According to an exemplary embodiment, the discharge unit may further include a door for opening / closing a path through which the air flow is discharged from the integrated exhaust pipeline to the atmosphere.

[0017] According to an exemplary embodiment, each of the first process chamber and the second process chamber may be arranged to perform a developing process for the substrate, and the developing process may include: a substrate loading step of feeding the substrate into the first process chamber or the second process chamber, a developing solution supply step of supplying a developing solution onto the substrate while rotating the substrate at a first speed, a spin-rinse immersion step of stopping the supply of the developing solution onto the substrate and stopping the substrate for a predetermined time or rotating the substrate at a second speed lower than the first speed, and a substrate unloading step of taking out the substrate from the first process chamber or the second process chamber, and the apparatus may further include a controller configured to control the door to open the path when performing the spin-rinse immersion step on the substrate in the first process chamber.

[0018] According to an exemplary embodiment, the substrate loading step includes a process of moving the substrate in a downward direction, and the controller may control the gate to open the path when performing the substrate loading step in the second process chamber.

[0019] According to an exemplary embodiment, each of the first process chamber and the second process chamber may be configured to perform a developing process for the substrate, and the developing process may include: a substrate loading step of feeding the substrate into the first process chamber or the second process chamber, a developing solution supply step of supplying a developing solution onto the substrate while rotating the substrate at a first speed, a spin-rinse immersion step of stopping the supply of the developing solution onto the substrate and stopping the substrate for a predetermined time or rotating the substrate at a second speed lower than the first speed, and a substrate unloading step of taking out the substrate from the first process chamber or the second process chamber, and the apparatus may further include a controller configured to control the gate to open the path when performing the spin-rinse immersion step on the substrate in the first process chamber and performing the substrate loading step in the second process chamber.

[0020] According to an exemplary embodiment, the discharge unit may further include a first valve that opens / closes the first discharge pipeline or adjusts the discharge flow rate; and a second valve that opens / closes the second discharge pipeline or adjusts the discharge flow rate; and the controller may control the first valve such that an opening rate of the first valve when performing the spin-rinse immersion step on the substrate in the first process chamber is less than an opening rate of the first valve when performing the developing solution supply step.

[0021] According to an exemplary embodiment, the discharge unit includes a first discharge unit positioned adjacent to the first point of the first discharge pipeline; and a second discharge unit positioned adjacent to the second point of the second discharge pipeline.

[0022] According to an exemplary embodiment, the discharge unit may include a disturbance mitigation pipeline, one end of which is connected to the integrated discharge pipeline; and a buffer member connected to the disturbance mitigation pipeline and providing a buffer space in which an air flow discharged from the integrated discharge pipeline through the disturbance mitigation pipeline stays.

[0023] In addition, another exemplary embodiment of the present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate may include: a first process chamber having a first processing space; a second process chamber having a second processing space; a transfer robot configured to transfer the substrate to the first process chamber or the second process chamber; and an exhaust unit configured to exhaust the atmospheres in the first processing space and the second processing space. Wherein, the first process chamber may include: a first processing container configured to provide the first processing space; a first support unit configured to support and rotate the substrate in the first processing space; and a first developer supply unit configured to supply developer to the substrate. The second process chamber may include: a second processing container configured to provide the second processing space; a second support unit configured to support and rotate the substrate in the second processing space; and a second developer supply unit configured to supply the developer to the substrate. The exhaust unit may include: an integrated exhaust pipeline in which a decompression unit is installed; a first exhaust pipeline connecting a first point of the first process chamber and the integrated exhaust pipeline; a second exhaust pipeline connecting a second point of the first process chamber and the integrated exhaust pipeline; and an interference mitigation unit configured to mitigate exhaust interference between the first process chamber and the second process chamber by allowing some of the airflow in the integrated exhaust pipeline to flow outside the integrated exhaust pipeline, and the interference mitigation unit may be positioned between the first point to which the first exhaust pipeline is connected and the second point to which the second exhaust pipeline is connected, in the integrated exhaust pipeline.

[0024] According to the exemplary embodiment, the interference mitigation unit may further include a door for opening / closing a path through which the airflow is discharged from the integrated exhaust pipeline to the atmosphere.

[0025] According to an exemplary embodiment, each of the first process chamber and the second process chamber is configured to perform a developing process for the substrate. The developing process may include: a substrate loading step of feeding the substrate into the first process chamber or the second process chamber, a developing solution supply step of supplying the developing solution onto the substrate while rotating the substrate at a first speed, a spin rinse immersion step of stopping the supply of the developing solution onto the substrate and stopping the substrate for a predetermined time or rotating the substrate at a second speed lower than the first speed, and a substrate unloading step of taking out the substrate from the first process chamber or the second process chamber. The substrate loading step may include a process of moving the substrate in a downward direction. The apparatus may further include a controller configured to control the gate to open the path when performing the spin rinse immersion step on the substrate in the first process chamber and the substrate loading step in the second process chamber.

[0026] According to an exemplary embodiment, the interference mitigation unit may include an interference mitigation pipeline, one end of which is connected to the integrated discharge pipeline; and a buffer member connected to the interference mitigation pipeline and providing a buffer space in which the airflow discharged from the integrated discharge pipeline through the interference mitigation pipeline stays.

[0027] In addition, another exemplary embodiment of the present invention provides a method for processing a substrate. The method for processing a substrate may include: performing a developing process on the substrate in each processing space while discharging the atmosphere in the processing space of each of a plurality of process chambers through the same integrated discharge pipeline. The developing process may include: a substrate loading step of moving the substrate in a downward direction and placing the substrate on a support unit, a developing solution supply step of supplying the developing solution onto the substrate, a spin rinse immersion step of stopping the supply of the developing solution onto the substrate and maintaining the substrate on the support unit for a predetermined time, and a substrate unloading step of moving the substrate in an upward direction and lifting the substrate from the support unit. When performing the developing process, the airflow flowing from the first process chamber, which is one of the process chambers, to the second process chamber, which is another one of the process chambers, is made to flow outside the integrated discharge pipeline between the adjacent first process chamber and the second process chamber to mitigate the airflow change in the processing space of the first process chamber that interferes with the pressure in the processing space of the second process chamber.

[0028] According to an exemplary embodiment, some of the airflow in the integrated discharge pipeline may be discharged into the atmosphere between the first process chamber and the second process chamber.

[0029] According to an exemplary embodiment, some of the gas flow in the integrated discharge pipeline can be discharged into a buffer member, and the buffer member is connected to the integrated discharge pipeline between the first process chamber and the second process chamber.

[0030] According to an exemplary embodiment, a door can be provided between a first point connecting the integrated discharge pipeline and the second process chamber and a second point connecting the integrated discharge pipeline and the second process chamber. The door is used to open / close an opening for discharging the gas flow in the integrated discharge pipeline into the atmosphere, and the opening can be opened when the spin coating immersion step is performed in the first process chamber.

[0031] According to an exemplary embodiment, a door can be provided between a first point connecting the integrated discharge pipeline and the second process chamber and a second point connecting the integrated discharge pipeline and the second process chamber. The door is used to open / close an opening for discharging the gas flow in the integrated discharge pipeline into the atmosphere, and the opening can be opened when the substrate loading step is performed in the second process chamber.

[0032] According to an exemplary embodiment, a door can be provided between a first point connecting the integrated discharge pipeline and the second process chamber and a second point connecting the integrated discharge pipeline and the second process chamber. The door is used to open / close an opening for discharging the gas flow in the integrated discharge pipeline into the atmosphere, and the opening can be opened when the spin coating immersion step is performed in the first process chamber and the substrate loading step is performed in the second process chamber.

[0033] According to an exemplary embodiment of the present invention, when a developing process is performed, the internal pressure of the process chamber in which the spin coating immersion step is performed can be maintained.

[0034] In addition, according to an exemplary embodiment of the present invention, when a developing process is performed, the discharge interference from the process chamber in which the substrate loading step is performed to another adjacent process chamber can be reduced.

[0035] In addition, according to an exemplary embodiment of the present invention, when a developing process is performed, the discharge interference from any process chamber in which the substrate loading step is performed to another adjacent process chamber in which the spin coating immersion step is performed can be reduced.

[0036] According to the present invention, when the spin coating immersion step is performed in any process chamber, the discharge gas flow discharged from the process chamber in which the spin coating immersion step is performed and other adjacent process chambers is discharged to the outside to maintain the internal pressure of the process chamber in which the spin coating immersion step is performed.

[0037] The effects of the present invention are not limited to the above effects, and those skilled in the art will clearly understand the effects not mentioned from this specification and the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 A cross-sectional view of a process chamber of a general substrate processing apparatus is schematically shown.

[0039] Figure 2 Schematically shown is Figure 1 a graph of the internal pressure of the process chamber in

[0040] Figure 3 A perspective view of an apparatus for processing a substrate according to an exemplary embodiment of the present invention is schematically shown.

[0041] Figure 4 Shown is Figure 2 a front view of the apparatus for processing a substrate in

[0042] Figure 5 Shown is Figure 2 a plan view of the apparatus for processing a substrate in

[0043] Figure 6 Shown is an example of a hand set to the Figure 5 transfer chamber in

[0044] Figure 7 Schematically shown is Figure 5 a plan view of an example of a heat treatment chamber in

[0045] Figure 8 Shown is Figure 7 a front view of the heat treatment chamber in

[0046] Figure 9 Schematically shown is Figure 5 a graph of an exemplary embodiment of a developing process performed in a liquid processing chamber in

[0047] Figure 10 Schematically shown is Figure 5 a graph of an exemplary embodiment of a liquid processing chamber in

[0048] Figure 11 A graph of an exemplary embodiment of an interference mitigation unit is schematically shown.

[0049] Figure 12 and Figure 13 Shown is Figure 11 an enlarged perspective view of the interference mitigation unit in

[0050] Figures 14 to 16 A graph schematically showing the flow of air in an integrated exhaust line according to the Figure 11 development process in

[0051] Figure 17 A graph schematically showing Figure 11 the internal pressure of the first process chamber in

[0052] Figures 18 to 20 A graph schematically showing Figure 11 another exemplary embodiment of the interference mitigation unit in

[0053] Figure 21 A graph schematically showing Figure 11 another exemplary embodiment of the interference mitigation unit in

[0054] Figure 22 Is Figure 21 an enlarged perspective view of the interference mitigation unit in

[0055] Figures 23 to 25 A graph schematically showing the flow of air in an integrated exhaust line according to the Figure 21 development process in

[0056] Figure 26 A flowchart showing a method for processing a substrate according to an exemplary embodiment of the present invention. Detailed Description

[0057] Hereinafter, exemplary embodiments of the present invention will be described in more detail with reference to the drawings. The exemplary embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following exemplary embodiments. Exemplary embodiments will be provided to those skilled in the art for a more complete description of the present invention. Accordingly, to emphasize a clearer description, the shapes of the components in the figures are exaggerated.

[0058] Hereinafter, reference will be made to Figures 3 to 20 to describe examples of the present invention in detail.

[0059] Figure 3 A perspective view schematically showing a device for processing a substrate according to an exemplary embodiment of the present invention, and Figure 4 is a front view of the device for processing a substrate in Figure 3 Figure 5 Is Figure 3 a plan view of the device for processing a substrate in

[0060] Refer to Figures 3 to 5 ​, the substrate processing apparatus 1 includes an indexing module 10, a processing module 20, and an interface module 50. According to an exemplary embodiment, the indexing module 10, the processing module 20, and the interface module 50 are sequentially arranged in a line. Hereinafter, the direction in which the indexing module 10, the processing module 20, and the interface module 50 are arranged is defined as the first direction 2, the direction perpendicular to the first direction when viewed from the top is defined as the second direction 4, and the direction perpendicular to the plane including both the first direction 2 and the second direction 4 is defined as the third direction 6.

[0061] The indexing module 10 transfers the substrate W from the container F storing the substrate W to the processing module 20. The indexing module 10 stores the substrate W that has been processed in the processing module 20 in the container F. The longitudinal direction of the indexing module 10 is set to the second direction 4. The indexing module 10 has a loading port 120 and an indexing frame 140.

[0062] The container F storing the substrate W is placed on the loading port 120. The loading port 120 is positioned on the opposite side of the processing module 20 based on the indexing frame 140. A plurality of loading ports 120 may be provided, and the plurality of loading ports 120 may be arranged in a line in the second direction 4. The number of loading ports 120 may be increased or decreased according to the process efficiency of the processing module 20 and the floor area condition.

[0063] A plurality of slots (not shown) are formed in the container F for storing the substrate W horizontally arranged on the ground. A sealed container such as a front opening unified pod (FOUP) can be used as the container F. The container F can be placed on the loading port 120 by a worker or a transportation tool (not shown) such as an overhead transporter, an overhead conveyor, or an automated guided vehicle.

[0064] The index rail 142 and the index manipulator 144 are disposed inside the index frame 140. The index rail 142 is disposed in the second direction 4 which is the longitudinal direction of the index frame 140. The index manipulator 144 can transfer the substrate W. The index manipulator 144 can transfer the substrate W between the index module 10 and the buffer chamber 240 to be described below. The index manipulator 144 can include an index hand 1440. The substrate W can be placed on the index hand 1440. The index hand 1440 can include an index base 1442 having a circular ring shape (a part of the circumference is bent to be symmetric) and an index support unit 1444 that moves the index base 1442. The configuration of the index hand 1440 is the same as or similar to the configuration of the transfer hand 2240 to be described below. The index hand 1440 can be set to be movable in the second direction 4 on the index rail 142. Therefore, the index hand 1440 can move back and forth along the index rail 142. In addition, the index hand 1440 can be set to be rotatable about the third direction 6 as an axis and movable in the third direction 6.

[0065] The processing module 20 performs a coating process and a developing process on the substrate W by receiving the substrate W stored in the container F. The processing module 20 has a coating block (COT) 20a and a developing block (DEV) 20b. The coating block 20a performs a coating process on the substrate W. The developing block 20b performs a developing process on the substrate W. A plurality of coating blocks 20a are provided and these coating blocks 20a are provided to be stacked on top of each other. A plurality of developing blocks 20b are provided and these developing blocks 20b are provided to be stacked on top of each other. According to Figure 3 an exemplary embodiment, two coating blocks 20a are provided, and two developing blocks 20b are provided. The coating blocks 20a can be disposed below the developing blocks 20b. According to the example, the two coating blocks 20a can perform the same process and can be provided with the same structure. In addition, the two developing blocks 20b can perform the same process and can be provided with the same structure.

[0066] Referring to Figure 5 , the coating block 20a includes a transfer chamber 220, a buffer chamber 230, a heat treatment chamber 260, and a process chamber 280 that performs liquid processing.

[0067] The developing block 20b includes a transfer chamber 220, a buffer chamber 230, a heat treatment chamber 260, and a process chamber 280 that performs liquid processing. The transfer chamber 220 provides a space for transferring the substrate W between the buffer chamber 240 and the heat treatment chamber 260, between the buffer chamber 240 and the process chamber 280, and between the heat treatment chamber 260 and the process chamber 280. The buffer chamber 240 provides a space for the substrate W to temporarily stay when being fed into the developing block 20b and when being taken out from the developing block 20b. The heat treatment chamber 260 performs a heat treatment process on the substrate W. The heat treatment process may include a cooling process and a heating process. The process chamber 280 performs a developing process of developing the substrate W by supplying a developing solution to the substrate W.

[0068] The transfer chamber 220, the buffer chamber 230, the heat treatment chamber 260, and the process chamber 280 of the coating block 20a are provided with a structure and layout that are substantially similar to those of the transfer chamber 220, the buffer chamber 230, the heat treatment chamber 260, and the process chamber 280 of the developing block 20b. However, the process chamber 280 that performs the liquid processing of the coating block 20a forms a liquid film by supplying a liquid to the substrate W. The liquid film may be a photoresist film or an anti-reflective film. Since the coating block 20a is provided with a structure and layout that are substantially similar to those of the developing block 20b, the description of the coating block is omitted. Hereinafter, the developing block 20b will be described.

[0069] The longitudinal direction of the transfer chamber 220 may be set as the first direction 2. A guide rail 222 and a transfer robot 224 are provided to the transfer chamber 220. The longitudinal direction of the guide rail 222 may be set in the transfer chamber 220 in the first direction 2 which is the longitudinal direction. The transfer robot 224 may be set to be linearly movable along the first direction 2 on the guide rail 222. The transfer robot 224 transfers the substrate W between the buffer chamber 240 and the heat treatment chamber 260, between the buffer chamber 240 and the process chamber 280, and between the heat treatment chamber 260 and the process chamber 280.

[0070] According to an example, the transfer robot 224 has a transfer hand 2240 on which the substrate W is placed. The transfer hand 2240 may be set to be movable back and forth, rotatable about the third direction 6 as an axis, and movable in the third direction 6.

[0071] Figure 6 To show an example of the hand provided to the Figure 5 transfer chamber in Figure 6, the transfer hand 2240 includes a base 2242 and a support projection 2244. The base 2242 may have an annular shape (a part of the circumference is curved). The base 2242 may have a ring shape (a part of the circumference is curved symmetrically). The inner diameter of the base 2242 is larger than the diameter of the substrate W. The support projection 2244 extends inward from the base 2242. A plurality of support projections 2244 are provided, and these support projections support the edge region of the substrate W. According to an example, four support projections 2244 may be provided at equal intervals.

[0072] Return reference Figure 4 and Figure 5 , a plurality of buffer chambers 240 are provided. Some of the buffer chambers 240 are arranged between the indexing module 10 and the transfer chamber 220. Hereinafter, this buffer chamber is defined as the front buffer zone 242. A plurality of front buffer zones 242 are provided, and the plurality of front buffer zones are arranged to be stacked on top of each other in the vertical direction. Some of the buffer chambers 240 are arranged between the transfer chamber 220 and the interface module 50. Hereinafter, this buffer chamber is defined as the rear buffer zone 244. A plurality of rear buffer zones 244 are provided, and the plurality of rear buffer zones are arranged to be stacked on top of each other in the vertical direction. Each of the front buffer zone 242 and the rear buffer zone 244 temporarily holds a plurality of substrates W. The substrates W stored in the front buffer zone 242 are loaded and unloaded by the indexing robot 144 and the transfer robot 224. The substrates W stored in the rear buffer zone 244 are loaded or unloaded by the transfer robot 224 and the first robot 5820 to be described below.

[0073] Buffer robots 2420 and 2440 may be provided at one side of the buffer chamber 240. The buffer robots 2420 and 2440 may include a front buffer robot 2420 and a rear buffer robot 2440. The front buffer robot 2420 may be provided at one side of the front buffer zone 242. The rear buffer robot 2440 may be provided at one side of the rear buffer zone 244. The buffer robots 2420 and 2440 are not limited thereto, and may be provided at both sides of the buffer chamber 240.

[0074] The front buffer manipulator 2420 can transfer the substrate W between the front buffer areas 242. The front buffer manipulator 2420 can include a front buffer hand 2422. The front buffer hand 2422 can move in the up-and-down direction along the third direction 6. The front buffer hand 2422 can be rotated. The front buffer hand 2422 can transfer the substrate W. The front buffer hand 2422 can load the substrate W onto or unload the substrate W from a pin 2486 provided on a support plate 2482 to be described below. The rear buffer manipulator 2440 can transfer the substrate W between the rear buffer areas 244. The rear buffer manipulator 2440 can include a rear buffer hand 2442. The configuration of the rear buffer hand 2442 is the same as or similar to the configuration of the front buffer hand 2422. Therefore, the description of the rear buffer hand 2422 is omitted.

[0075] Figure 7 Schematically shown is Figure 5 a plan view of an example of the heat treatment chamber in Figure 8 and Figure 7 a front view of the heat treatment chamber in Figure 7 and Figure 8 , a plurality of heat treatment chambers 260 are provided. These heat treatment chambers 260 are arranged in the first direction 2. The heat treatment chambers 260 are positioned at one side of the transfer chamber 220. The heat treatment chamber 260 includes a housing 2620, a cooling unit 2640, a heating unit 2660, and a transfer plate 2680.

[0076] The housing 2620 is set in a substantially rectangular parallelepiped shape. A space is provided in the housing 2620. An inlet (not shown) is formed in a side wall of the housing 2620 through which the substrate W enters and exits. The inlet can be maintained in an open state. A door (not shown) can be provided to selectively open and close the inlet. The cooling unit 2640, the heating unit 2660, and the transfer plate 2680 are provided in the inner space of the housing 2620. The cooling unit 2640 and the heating unit 2660 are arranged in a line in the second direction 4. According to an example, the cooling unit 2640 can be positioned relatively closer to the transfer chamber 220 than the heating unit 2660. The cooling unit 2640 includes a cooling plate 2642. When viewed from the top, the cooling plate 2642 can have a substantially circular shape. A cooling member 2644 is provided in the cooling plate 2642. According to an example, the cooling member 2644 can be formed in the cooling plate 2642 and provided as a path through which a cooling fluid flows.

[0077] The heating unit 2660 includes a heating plate 2661, a heater 2663, a cover 2665, and a driver 2667. When viewed from the top, the heating plate 2661 may have a substantially circular shape. The heating plate 2661 has a diameter larger than that of the substrate W. The heater 2663 is installed in the heating plate 2661. The heater 2663 may be set as a heating resistor to which an electric current is applied. The lift pins 2669 are provided on the heating plate 2661 and are drivable in the vertical direction along the third direction 6. The lift pins 2669 carry in the substrate W from a conveyance tool outside the heating unit 2660 and lay down the substrate W on the heating plate 2661, or lift the substrate W from the heating plate 2661 and take over the substrate W to a conveyance tool outside the heating unit 2660. According to an example, three lift pins 2669 may be provided. The cover 2665 has a space, the lower part of which is open in the space. The cover 2665 is positioned at the upper part of the heating plate 2661 and is moved in the vertical direction by the driver 2667. The space formed by the cover 2665 and the heating plate 2665 by moving the cover 2666 is set as a heating space for heating the substrate W.

[0078] The transfer plate 2680 is provided in a substantially disk shape and has a diameter corresponding to that of the substrate W. A notch 2682 is formed at the edge of the transfer plate 3240. The notch 2682 is set such that the number thereof corresponds to the number of the support protrusions 2244 formed on the transfer hand 2240 of the transfer robot 224 and is formed at a position corresponding to the support protrusions 2244. When the vertical positions of the transfer hand 2240 and the transfer plate 2680 are changed at a position where the transfer hand 2240 and the transfer plate 2680 are aligned in the vertical direction, the substrate W is transferred between the transfer hand 2240 and the transfer plate 2680. The transfer plate 2680 may be mounted on the guide rail 2692 and moved between the first region 2696 and the second region 2698 along the guide rail 2692 by the driver 2694.

[0079] A plurality of slit-shaped guide grooves 2684 are provided in the transfer plate 2680. The guide grooves 2684 extend from one end of the transfer plate 2680 to the inside of the transfer plate 2680. The longitudinal direction of the guide grooves 2684 is set along the second direction 4, and the guide grooves 2684 are positioned to be spaced apart from each other in the first direction 2. When the substrate W is carried in and left between the transfer plate 2680 and the heating unit 2660, the guide grooves 2684 prevent the transfer plate 2680 and the lift pins 269 from interfering with each other.

[0080] When the transfer plate 2680 on which the substrate W is placed is in contact with the cooling plate 2642, the substrate W is cooled. The transfer plate 2680 is made of a material with high thermal conductivity so that heat can be well transferred between the cooling plate 2642 and the substrate W. According to an example, the transfer plate 2680 can be made of a metal material.

[0081] Return reference Figure 4 and Figure 5 A plurality of process chambers 280 for performing liquid processing are provided. Some of the process chambers 280 can be arranged to overlap each other. The process chambers 280 are arranged at one side of the transfer chamber 220. The process chambers 280 are arranged in a line in the second direction 2.

[0082] Figure 9 For schematically showing Figure 5 in the liquid processing chamber of Figure 9 The graphic of an exemplary embodiment of the developing process performed in the process chamber 280. Referring to

[0083] In the substrate loading step, the substrate W is fed into the process chamber 280. In the process chamber 280, the substrate W can be placed on the main body 2832 of the support unit 2830 to be described below by the transfer robot 224. The transfer robot 224 moves the substrate W in the downward direction. In the substrate loading step, the internal atmosphere of the process chamber 280 can be discharged.

[0084] In the developing solution supply step, the developing solution is supplied to the substrate W mounted in the support unit 2830. In the developing solution supply step, the substrate W is rotated at a first speed. In the developing solution supply step, the internal atmosphere of the process chamber 280 can be discharged.

[0085] In the spin immersion step, the supply of the developing solution to the substrate W is stopped and the developing solution supplied to the substrate W is maintained. In the spin immersion step, the substrate W is rotated at a second speed slower than the first speed. Optionally, in the spin immersion step, the substrate W can be stopped. In the spin immersion step, the internal atmosphere of the process chamber 280 may not be discharged. Optionally, the internal atmosphere of the process chamber 280 can be discharged so that the amount of discharge can be smaller than that in the developing solution supply step.

[0086] The high-speed rotation step is a process of removing the developer solution maintained on the substrate W according to the swirling immersion step. In the high-speed rotation step, the substrate W is rotated at a third speed faster than the first speed. In the substrate unloading step, the substrate W is taken out from the process chamber 280. The substrate W is moved upward from the support unit 2830 by the transfer robot 224. In the substrate unloading step, the internal atmosphere of the process chamber 280 can be discharged.

[0087] Figure 10 To schematically show Figure 5 an exemplary embodiment of a process chamber that performs Figure 10 liquid processing therein. Referring to

[0088] Figure, the process chamber 280 includes a housing 2810, a processing container 2820, a support unit 2830, an elevation unit 2840, a liquid supply unit 2850, a gas flow supply unit 2660, and a discharge unit 3000.

[0089] The housing 2810 has a space provided therein. The housing 2810 is provided in a substantially rectangular parallelepiped shape. An opening (not shown) may be formed at one side portion of the housing 2810. The opening serves as an inlet through which the substrate W is fed into the internal space or carried out from the internal space. In addition, in order to selectively seal the inlet, a door (not shown) may be installed in a region adjacent to the inlet. When performing a processing process on the substrate W fed into the internal space, the internal space can be sealed by blocking the inlet with the door. The processing container 2820, the support unit 2830, the elevation unit 2840, and the liquid supply unit 2850 are arranged in the housing 2810.

[0090] According to an example, the processing container 2820 may include an internal cup-shaped portion 2822 and an external cup-shaped portion 2824. The external cup-shaped portion 2824 may be provided to surround the circumference of the support unit 2830, and the internal cup-shaped portion 2822 may be positioned inside the external cup-shaped portion 2824. When viewed from the top, each of the internal cup-shaped portion 2822 and the external cup-shaped portion 2824 may have an annular shape. The space between the internal cup-shaped portion 2822 and the external cup-shaped portion 2824 may be provided as a recovery path in which the fluid introduced into the processing space is recovered.

[0091] When viewed from the top, the inner cup portion 2822 can be set to a certain shape to surround the support axis 2834 of the support unit 2830 to be described below. For example, when viewed from the top, the inner cup portion 2822 can be set to a circular plate shape to surround the support axis 2834. When viewed from the top, the inner cup portion 2822 can be positioned to overlap with the discharge unit 3000, which will be described below and is coupled to the housing 2810.

[0092] The inner cup portion 2822 can have an inner portion and an outer portion. The top surfaces of the inner portion and the outer portion can be respectively set to have different angles based on a virtual horizontal line. For example, when viewed from the top, the inner portion can be positioned to overlap with the body 2832 of the support unit 2830 to be described below. The inner portion can be positioned to face the support axis 2834. Since the inner portion deviates from the support axis 2834, the top surface faces an upwardly inclined direction, and the outer portion can extend from the inner portion in an outward direction. Since the top surface deviates from the support axis 2834, the outer portion can face a downwardly inclined direction. The upper end portion of the inner portion can coincide with the side endportion of the substrate W in the vertical direction. According to an example, the point where the outer portion and the inner portion meet can be located at a position lower than the upper end portion of the inner portion. The point where the inner portion and the outer portion meet can be set to be circular. The outer portion is combined with the outer cup portion 2824 to form a recovery path in which the processing medium is recovered.

[0093] The outer cup portion 2824 can be set to a cup shape to cover the support unit 2830 and the inner cup portion 2822. The outer cup portion 2824 can include a bottom portion 2824a, a side portion 2824b, and an inclined portion 2824c.

[0094] The bottom portion 2824a can have a circular plate shape with a hollow. The recovery pipeline 2870 can be connected to the bottom portion 2824a. The recovery pipeline 2870 can recover the processing medium supplied onto the substrate W. The processing medium recovered by the recovery pipeline 2870 can be reused by an external regeneration system (not shown).

[0095] The side portion 2824b can have an annular shape to cover the support unit 2830. The side portion 2824b can extend in the vertical direction from the side end of the bottom portion 2824a. The side portion 2824b can extend upward from the bottom portion 2824a.

[0096] The inclined portion 2824c may extend from the upper end portion of the side portion 2824b in a direction toward the central axis of the outer cup portion 2824. The inner surface of the inclined portion 2824c may be set to incline upward so as to be close to the support unit 2830. The inclined portion 2824c may be set to have an annular shape. In the case of performing a processing process on the substrate W, the upper end portion of the inclined portion 2824c may be positioned higher than the substrate W supported on the support unit 2830.

[0097] The support unit 2830 supports and rotates the substrate W in the processing space. The support unit 2830 may be a chuck that supports and rotates the substrate W. The support unit 2830 may include a body 2832, a support axis 2834, and a drive unit 2836. The body 2832 may have an upper surface on which the substrate W is placed. When viewed from the top, the upper surface of the body 2832 is set to have a substantially circular shape. The upper surface of the body 2832 may be set to have a diameter smaller than that of the substrate W. Suction holes (not shown) are formed in the body 2832 to hold the substrate W in a vacuum suction scheme. Optionally, an electrostatic plate (not shown) is provided in the body 2832 to hold the substrate W in an electrostatic adsorption scheme. Optionally, support pins for supporting the substrate W are provided in the body 2832, and the support pins and the substrate W are in physical contact with each other to hold the substrate W.

[0098] The support axis 2834 is coupled to the body 2832. The support axis 2834 may be coupled to the bottom surface of the body 2832. The support axis 2834 may be set such that the longitudinal direction faces the up and down directions. The support axis 2834 is set to be rotatable by receiving power from the drive unit 2836. The support axis 2834 is rotated by rotating the drive unit 2836 to rotate the body 2832. The drive unit 2836 may change the rotation speed of the support axis 2834. The drive unit 2836 may be a motor that provides a driving force. However, the drive unit 2836 is not limited thereto, and may be variously modified into a known device that provides a driving force.

[0099] The lifting unit 2840 adjusts the relative height between the processing container 2820 and the support unit 2830. The lifting unit 2840 linearly moves the processing container 2820 in the third direction 6. The lifting unit 2840 may include an inner lifting member 2842 and an outer lifting member 2844. The inner lifting member 2842 may lift and move the inner cup portion 2822. The outer lifting member 2844 may lift and move the outer cup portion 2824.

[0100] The liquid supply unit 2850 may include a liquid nozzle 2853, an arm 2855, a track 2857, and a driver 2859.

[0101] The liquid nozzle 2853 can supply liquid to the substrate W supported on the support unit 2830. The liquid supplied by the liquid nozzle 2853 can be a developing solution. In addition, the liquid nozzle 2853 can supply deionized water (DIW) to the substrate W supported on the support unit 2830. In addition, the liquid nozzle 2853 can supply nitrogen gas (N2) to the substrate W supported on the support unit 2830. In Figure 10 which shows that a single liquid nozzle 2853 is provided, the present invention is not limited thereto and a plurality of liquid nozzles 2853 can be provided.

[0102] The arm 2855 can support the liquid nozzle 2853. The liquid nozzle 2853 can be mounted at one end of the arm 2855. The liquid nozzle 2853 can be mounted on the bottom surface of one end of the arm 2855. When viewed from the top, the liquid nozzle 2853 can be arranged in a direction parallel to the longitudinal direction of the track 2857 to be described below. The other end of the arm 2855 can be coupled to the driver 2859.

[0103] The arm 2855 can be moved by the driver 2859. As a result, the position of the liquid nozzle 2853 mounted in the arm 2855 can be changed. The moving direction of the arm 2855 can be guided along the track 2857 (on which the driver 2859 is mounted). The track 2857 can be arranged such that the longitudinal direction faces the horizontal direction. For example, the track 2857 can be arranged such that the longitudinal direction faces the direction parallel to the first direction 2. Alternatively, the arm 2855 can be coupled and rotated to a rotation axis, the longitudinal direction of which faces the third direction 6. The rotation axis can be rotated by a driver. As a result, the position of the liquid nozzle 2853 mounted in the arm 2855 can be changed.

[0104] The air flow supply unit 2860 supplies an air flow to the internal space of the housing 2810. The air flow supply unit 2860 can supply a downward air flow to the internal space. The air flow supply unit 2860 can supply an air flow with controlled temperature and / or humidity to the internal space. The air flow supply unit 2860 can be mounted in the housing 2810. The air flow supply unit 2860 can be mounted above the processing container 2820 and the support unit 2830. The air flow supply unit 2860 can include a fan 2862, an air flow supply line 2864, and a filter 2866. The air flow supply unit 2864 can supply an external air flow with controlled temperature and / or humidity to the internal space. The filter 2864 can be mounted in the air flow supply line 2866. The filter 2866 can remove impurities contained in the external air flow flowing on the air flow supply line 2864. When the fan 2862 is driven, the external air flow supplied by the air flow supply line 2864 can be uniformly delivered to the internal space.

[0105] The exhaust unit 3000 exhausts the atmosphere in the processing space. The exhaust unit 3000 may include an integrated exhaust pipeline 3200, an exhaust pipeline 3400, and an exhaust valve 3600.

[0106] The integrated exhaust pipeline 3200 may be disposed outside the process chamber 280. A decompression unit (not shown) is installed in the integrated exhaust pipeline 3200. The integrated exhaust pipeline 3200 exhausts the atmosphere in the processing space through the decompression unit.

[0107] The exhaust pipeline 3400 may be connected to the processing container 2820. Optionally, the exhaust pipeline 3400 may be connected to the bottom portion 2824a of the external cup 2824. When viewed from the top, the exhaust pipeline 3400 may be positioned to overlap with the internal cup 2822. The exhaust pipeline 3400 connects the process chamber 280 and the integrated exhaust pipeline 3200. The internal atmosphere of the process chamber is exhausted to the integrated exhaust pipeline 3200 through the exhaust pipeline 3400.

[0108] The exhaust valve 3600 may be installed in the exhaust pipeline 3400. The exhaust valve 3600 may open / close the exhaust pipeline 3400. Optionally, the exhaust valve 3600 may adjust the exhaust flow rate of the exhaust pipeline 3400. The exhaust valve 3600 may be set as an on / off valve or a flow rate regulating valve. The exhaust valve 3600 is not limited thereto, and the exhaust valve 3600 may be set as various known valves capable of adjusting the exhaust amount.

[0109] Figure 11 A graph schematically showing an exemplary embodiment of the interference mitigation unit. Figure 12 and Figure 13 is Figure 11 an enlarged perspective view of the interference mitigation unit in

[0110] Referring to Figures 11 to 13 , a plurality of process chambers 280 may be provided. As an example, the process chamber 280 may include a first process chamber 280a and a second process chamber 280b. The first process chamber 280a includes a first housing 2810a, a first processing container 2820a, a first support unit 2830a, a first lifting unit 2840a, and a first liquid supply unit 2850a. The second process chamber 280b includes a second housing 2810b, a second processing container 2820b, a second support unit 2830b, a second lifting unit 2840b, and a second liquid supply unit 2850b. The housings 2820a and 2820b, the support units 2830a and 2830b, the lifting units 2840a and 2840b, and the liquid supply units 2850a and 2850b are set to be the same as Figure 10The housing 2820, the support unit 2830, the lifting unit 2840, the liquid supply unit 2580, and the air flow supply unit 2860 in the exemplary embodiments are similar.

[0111] The discharge unit 3000 discharges the atmosphere in the processing space. The discharge unit 3000 includes an integrated discharge pipeline 3200, a first discharge pipeline 3420, a second discharge pipeline 3440, a first valve 3620, a second valve 3640, and an interference mitigation unit 3800.

[0112] The integrated discharge pipeline 3200 may be provided outside the process chamber 280. A decompression unit (not shown) is installed in the integrated discharge pipeline 3200. The integrated discharge pipeline 3200 discharges the atmosphere in the processing space through the decompression unit.

[0113] The first discharge pipeline 3420 may be connected to the first processing container 2820a. The first discharge pipeline 3420 connects the first process chamber 280a and the integrated discharge pipeline 3200. The first discharge pipeline 3420 connects the first process chamber 280a and the integrated discharge pipeline 3200 at a first point P1. The internal atmosphere of the first process chamber 280a is discharged to the integrated discharge pipeline 3200 through the first discharge pipeline 3420.

[0114] The second discharge pipeline 3440 may be connected to the second processing container 2820b. The second discharge pipeline 3440 connects the second process chamber 280b and the integrated discharge pipeline 3200. The second discharge pipeline 3440 connects the second process chamber 280b and the integrated discharge pipeline 3200 at a second point P2. The internal atmosphere of the second process chamber 280b is discharged to the integrated discharge pipeline 3200 through the second discharge pipeline 3440.

[0115] The first valve 3620 may be installed in the first discharge pipeline 3420. The first valve 3620 may open / close the first discharge pipeline 3420. Optionally, the first valve 3620 may adjust the discharge flow rate of the first discharge pipeline 3420. The first valve 3620 may be set as an on / off valve or a flow rate regulating valve. The first valve 3620 is not limited thereto, and the first valve 3620 may be set as various known valves capable of adjusting the discharge amount.

[0116] The second valve 3640 may be installed in the second discharge pipeline 3440. The second valve 3640 may open / close the second discharge pipeline 3440. Optionally, the second valve 3640 may adjust the discharge flow rate of the second discharge pipeline 3440. The second valve 3640 may be set as an on / off valve or a flow rate regulating valve. The second valve 3640 is not limited thereto, and the second valve 3640 may be set as various known valves capable of adjusting the discharge amount.

[0117] The interference mitigation unit 3800 mitigates exhaust interference between the first process chamber 280a and the second process chamber 280b. The interference mitigation unit 3800 may be disposed in the integrated exhaust pipeline 3200. The interference mitigation unit 3800 may be disposed in the integrated exhaust pipeline 3200 between a first point P1 connecting the first process chamber 280a and the first exhaust pipeline 3420 and a second point P2 connecting the second process chamber 280b and the second exhaust pipeline 3440.

[0118] The interference mitigation unit 3800 may include an exhaust unit 3820 that can exhaust some of the airflow discharged from the interior of the integrated exhaust pipeline 3200 to the exterior of the integrated exhaust pipeline 3200. Optionally, the exhaust unit 3820 may exhaust some of the airflow discharged from the interior of the integrated exhaust pipeline 3200 from the integrated exhaust pipeline 3200 to the atmosphere.

[0119] The exhaust unit 3820 is arranged to exhaust the atmosphere in the integrated exhaust pipeline 3200. One end of the path is connected to the integrated exhaust pipeline 3200. An opening in communication with the exterior of the integrated exhaust pipeline 3200 is formed at the other end of the path. One end of the path may extend vertically from the integrated exhaust pipeline 3200 to the ground. The other end of the path extends from the one end and extends horizontally to the ground, and an opening may be formed at this end. However, the path is not limited thereto and may be arranged in various shapes.

[0120] The exhaust unit 3820 may have a door 3860 for opening / closing the opening at the end of the path. The door 3860 may be arranged as a movable door panel. The door 3860 is not limited thereto, and the door 3860 may be arranged in various openable / closable structures.

[0121] The controller 4000 may control the first valve 3620, the second valve 3640, and the door 3860. The controller 4000 may control the opening / closing of the first valve 3620 and the second valve 3640. The controller 4000 may open / close the door 3860. As an example, when the controller 4000 controls to open the door 3860, some of the airflow discharged from the interior of the integrated exhaust pipeline 3200 may be exhausted to the exterior of the integrated exhaust pipeline 3200 through the path.

[0122] Figures 14 to 16 For schematically showing Figure 11 the flow of the airflow in the integrated exhaust pipeline in Figure 17 For schematically showing Figure 11 the internal pressure of the first process chamber in

[0123] Refer to Figure 14 , the developing solution supply step is performed in the first process chamber 280a. The first liquid supply unit 2850a discharges the developing solution onto the substrate W that is placed on the first support unit 2830a in the second process chamber 280a and rotates. The controller 4000 opens the first valve 3620. The internal atmosphere of the first process chamber 280a is discharged through the first discharge line 3420 connected to the integrated discharge line 3200. The controller 4000 closes the door 3860 of the interference mitigation unit 3800.

[0124] Refer to Figure 15 , the spin coating immersion step is performed in the first process chamber 280a. The first liquid supply unit 2850a stops supplying the developing solution onto the substrate W. The first support unit 2830a can be set to rotate the substrate W at a low speed or stop the substrate W. The controller 4000 can control the first valve 3620 such that the opening rate of the first discharge line 3420 is less than the opening rate of the first discharge line in the developing solution supply step and / or the high-speed rotation step. Optionally, the controller 4000 can control to close the first valve 3620 to prevent the first discharge line 3420 from being opened. As a result, the inside of the first process chamber 280a may not be discharged, or may be discharged in a small amount.

[0125] In the second process chamber 280b, the substrate loading step is performed. The transfer robot 224 can transfer the substrate W on the second support unit 2830b. The transfer robot 224 can move the substrate W in the downward direction. The controller 4000 opens the second valve 3640 to discharge the internal atmosphere of the second process chamber 280b. As a result, the air flow discharged from the second process chamber 280b is introduced into the integrated discharge line 3200.

[0126] The controller 4000 opens the door 3860 of the interference mitigation unit 3800. Some of the air flow discharged from the inside of the integrated discharge line 3200 is discharged to the interference mitigation unit 3800 located between the first process chamber 280a and the second process chamber 280b. The air flow introduced into the path of the interference mitigation unit 3800 is discharged to the outside of the integrated discharge line 3200 through the open door 3860.

[0127] When the spin coating immersion step is performed in the first process chamber 280a, the developing solution supplied to the substrate W should be maintained in a constant state. When the internal pressure of the first process chamber 280a changes, the developing solution maintained on the substrate W will sway. The developing solution maintained on the substrate W is affected by the internal pressure of the first process chamber 280a. As a result, when the spin coating immersion step is performed, the internal pressure of the first process chamber 280a should be maintained constant. When the substrate W is placed on the second support unit 2830b in the second process chamber 280b, the substrate W is moved downward by the transfer robot 224. In this process, a downward pressure of the air layer is generated inside the second process chamber 280b. As a result, the discharge amount discharged from the second process chamber 280b to the second discharge pipeline 3440 temporarily increases. Although the first discharge pipeline 3420 provided in the first process chamber 280a where the spin coating immersion step is performed is closed or partially opened, the temporarily increased discharge air flow is introduced from the second process chamber 280b into the integrated discharge pipeline 3200, thereby affecting the internal pressure of the first process chamber 280b.

[0128] The interference reduction unit 3800 is arranged between the first process chamber 280a and the second process chamber 280b to discharge some air flow in the integrated discharge pipeline 3200 to the interference reduction unit 3800. As a result, the internal pressure change caused by the discharge interference in the first process chamber 280a (where the spin coating immersion process is performed in the adjacent second process chamber 280b) can be minimized. The internal pressure of the first process chamber 280a is constantly maintained to maintain the developing solution on the substrate W, so as to effectively perform the developing process.

[0129] Refer to Figure 16 , the high-speed rotation step is performed in the first process chamber 280a. The first support unit 2830a rotates at a higher speed than the speed in the developing solution supply step or / and the spin coating immersion step. The controller 4000 opens the first valve 3620. The internal atmosphere of the first process chamber 280a is discharged through the first discharge pipeline 3420 connected to the integrated discharge pipeline 3200. The controller 4000 closes the door 3860 of the interference reduction unit 3800.

[0130] In the second process chamber 280b, the developing solution supply step is performed. The second liquid supply unit 2850b discharges the developing solution onto the substrate W that is placed on the second support unit 2830b in the second process chamber 280b and rotates. The controller 4000 opens the second valve 3640. The internal atmosphere of the second process chamber 280b is discharged through the second discharge pipeline 3440 connected to the integrated discharge pipeline 3200.

[0131] Refer to Figure 17, the interference mitigation unit 3800 is disposed between the first process chamber 280a and the second process chamber 280b to discharge some of the airflow in the integrated discharge pipeline 3200 to the interference mitigation unit 3800. As a result, the total airflow reaching the first process chamber 280a in the integrated discharge pipeline 3200 can be minimized. The change in the internal pressure of the first process chamber 280a during the spin coating immersion process can be minimized at point B, which is the time point when the substrate is loaded into the second process chamber 280b positioned adjacent to the first process chamber 280a. The internal pressure of the first process chamber 280a is constantly maintained to maintain the developer solution on the substrate W, thereby effectively performing the development process.

[0132] Figures 18 to 20 is schematically shown Figure 11 a graph of another exemplary embodiment of the interference mitigation unit in Figures 17 to 19 , the interference mitigation unit 3800 mitigates the discharge interference between the first process chamber 280a and the second process chamber 280b. The interference mitigation unit 3800 can be disposed in the integrated discharge pipeline 3200. The interference mitigation unit 3800 can be disposed in the integrated discharge pipeline 3200 between a first point P1 connecting the first process chamber 280a and the first discharge pipeline 3420 and a second point P2 connecting the second process chamber 280b and the second discharge pipeline 3440. The interference mitigation unit 3800 can include a discharge unit 3820 that can discharge some of the airflow discharged from the inside of the integrated discharge pipeline 3200 to the outside of the integrated discharge pipeline 3200. Optionally, the discharge unit 3820 can discharge some of the airflow discharged from the inside of the integrated discharge pipeline 3200 from the integrated discharge pipeline 3200 to the atmosphere.

[0133] The interference mitigation unit 3800 may include a first interference mitigation unit 3800a and a second interference mitigation unit 3800b. The first interference mitigation unit 3800a may be disposed at a position adjacent to a first point Pl connected to the first discharge pipeline 3420. The interference mitigation unit 3800 may include a first discharge unit 3822. The discharge unit 3822 is set as a first path 3862, in which the atmosphere is discharged in the integrated discharge pipeline 3200. One end of the first path 3862 may extend vertically from the integrated discharge pipeline 3200 to the ground. The other end of the first path 3862 extends from the one end and extends horizontally to the ground, and an opening may be formed at this end. The shape of the first path is not limited thereto, and the shape of the first path may be set to various shapes. The first discharge unit 3822 may have a first door 3862 for opening / closing the opening at the end of the first path. The first door 3862 may be set as a movable door panel. The first door 3862 is not limited thereto, and the first door 3862 may be set to various known devices.

[0134] The second interference mitigation unit 3800b may be disposed at a position adjacent to a second point P2 connected to the second discharge pipeline 3440. The second interference mitigation unit 3800b may include a second discharge unit 3824. The second discharge unit 3824 is set as a second path, in which the atmosphere is discharged in the integrated discharge pipeline 3200. The second path and the second door 3864 may be respectively set to be similar to the first path and the first door 3862, so the description of the second path and the second door will be omitted hereinafter.

[0135] The controller 4000 can control the first valve 3620, the second valve 3640, the first door 3862, and the second door 3864. The controller 4000 can control the opening / closing of the first valve 3620 and the second valve 3640. The controller 4000 can control the opening / closing of the first door 3862 and the second door 3864. As an example, when the controller 4000 controls to open the first door 3862, some of the airflow discharged from the inside of the integrated discharge pipeline 3200 can be discharged to the outside of the integrated discharge pipeline 3200 through the first path. Optionally, when the controller 4000 controls to open the second door 3864, some of the airflow discharged from the inside of the integrated discharge pipeline 3200 can be discharged to the outside of the integrated discharge pipeline 3200 through the second path. Optionally, when the controller 4000 controls to open both the first door 3862 and the second door 3864, some of the airflow discharged from the inside of the integrated discharge pipeline 3200 can be discharged to the outside of the integrated discharge pipeline 3200 through the second path and some other airflow can be discharged to the outside of the integrated discharge pipeline 3200 through the first path 3862. When the controller 4000 closes both the first door 3862 and the second door 3864, the airflow in the integrated discharge pipeline 3200 is discharged through the integrated discharge pipeline 3200.

[0136] When the spin coating immersion step is performed in the first process chamber 280a and the development process is performed in the second process chamber 280b, the controller 4000 closes the first valve 3620 or controls the discharge flow rate of the first process chamber 280a to be smaller than the discharge flow rate in the second process chamber where the development process is being performed. In addition, the controller 4000 opens the first door 3862 of the first discharge unit 3822. Optionally, the controller 4000 can open both the first door 3862 of the first discharge unit 3822 and the second door 3864 of the second discharge unit 3824.

[0137] When the spin coating immersion step is performed in the first process chamber 280a and the substrate loading step is performed in the second process chamber 280b, the controller 4000 closes the first valve 3620 or controls the discharge flow rate of the first process chamber 280a to be smaller than the discharge flow rate in the second process chamber where the development process is being performed. In addition, the controller 4000 opens the first door 3862 and the second door 3864 of the first discharge unit 3822.

[0138] When a substrate loading step is performed in the second process chamber 280b adjacent to the first process chamber 280a, a downward pressure of the air layer is generated inside the second process chamber 280b due to the downward movement of the substrate. The discharge amount discharged from the second process chamber 280b to the second discharge pipeline 3440 temporarily increases. As a result, when a spin coating immersion step is performed in the first process chamber 280a and a substrate loading step is performed in the second process chamber 280b, the discharge interference in the first process chamber 280a is maximized. When the interference in the first process chamber 280a where the spin coating immersion step is performed is maximized, both the first door 3862 and the second door 3864 provided between the first process chamber 280a and the second process chamber 280b are opened to minimize the discharge interference in the first process chamber 280a. Optionally, when there may be interference in the internal pressure of the first process chamber 280a where the spin coating immersion step is performed, only the first door 3862 provided at a position adjacent to the first process chamber 280a is opened to plan an effective discharge.

[0139] Referring to Figure 20 , the interference reduction unit 3800 may be provided in the integrated discharge pipeline 3200. The interference reduction unit 3800 may include a discharge unit 3820 that can discharge some of the air flow discharged from the inside of the integrated discharge pipeline 3200 to the outside of the integrated discharge pipeline 3200. Optionally, some of the air flow discharged from the inside of the integrated discharge pipeline 3200 may be discharged from the integrated discharge pipeline 3200 to the atmosphere. An opening communicating with the outside of the integrated discharge pipeline 3200 is formed in the discharge unit 3820. Optionally, an opening communicating with the outside of the integrated discharge pipeline 3200 and a door 3680 capable of opening / closing the opening may be provided in the discharge unit 3820. The door 3680 may be provided as a movable door panel. The door 3860 is not limited thereto, and the door 3860 may be provided as various known openable / closable devices.

[0140] Figure 21 To schematically show Figure 11 a graphical view of another exemplary embodiment of the interference reduction unit in Figure 22 For the Figure 21 enlarged perspective view of the interference reduction unit in Figure 21 and Figure 22 The exemplary embodiments described in Figure 10 include the housing 2810, the processing container 2820, the support unit 2830, the lifting unit 2840, the liquid supply unit 2850, and the air flow supply unit 2860 of the process chamber 280 in

[0141] Referring to Figures 21 to 22, the interference mitigation unit 3800 mitigates the exhaust interference between the first process chamber 280a and the second process chamber 280b. The interference mitigation unit 3800 can be disposed in the integrated exhaust line 3200. The interference mitigation unit 3800 can be disposed in the integrated exhaust line 3200 between a first point P1 connecting the first process chamber 280a and the first exhaust line 3420 and a second point P2 connecting the second process chamber 280b and the second exhaust line 3440. Optionally, a plurality of interference mitigation units 3800 can be disposed between the first point P1 and the second point P2.

[0142] The interference mitigation unit 3800 can include an exhaust unit 3820 that can exhaust some of the air flow discharged from the interior of the integrated exhaust line 3200 to the exterior of the integrated exhaust line 3200. The exhaust unit 3820 can include an interference mitigation line 3840 and a buffer member 3880.

[0143] One end of the interference mitigation line 3840 is connected to the integrated exhaust line 3200. The other end of the interference mitigation line 3840 is connected to the buffer member 3880 that provides a buffer space. The buffer member 3880 provides a buffer space in which some of the air flow discharged from the integrated exhaust line 3200 stays. The buffer member 3880 can be set to a substantially regular hexahedron shape. However, the buffer member 3880 is not limited thereto and can be set to various shapes.

[0144] The controller 4000 can control the opening / closing of the first valve 3620 and the second valve 3640. The controller 4000 can control the opening rate of the first valve 3620 and the second valve 3640.

[0145] Figures 23 to 25 To schematically show Figure 21 the flow of the air flow in the integrated exhaust line according to the

[0146] development process in Figure 23 . In the following, the flow of the air flow in the integrated exhaust line 8300 based on the development process will be described in detail.

[0147] Referring to Figure 24, the spin coating immersion step is performed in the first process chamber 280a. The first liquid supply unit 2850a stops supplying the developer solution onto the substrate W. The first support unit 2830a can rotate the substrate W at a low speed or stop the substrate W. The controller 4000 can control the first valve 3620 such that the opening rate of the first discharge pipeline 3420 is less than the opening rate of the first discharge pipeline during the developer solution supply step and / or the high-speed rotation step. Optionally, the controller 4000 can control to close the first valve 3620 to prevent the first discharge pipeline 3420 from being opened. As a result, the inside of the first process chamber 280a may not be discharged or may be discharged in a small amount.

[0148] In the second process chamber 280b, the substrate loading step is performed. The transfer robot 224 can transfer the substrate W on the second support unit 2830b. The transfer robot 224 can move the substrate W in the downward direction. The controller 4000 opens the second valve 3640 to discharge the internal atmosphere of the second process chamber 280b. As a result, the airflow discharged from the second process chamber 280b is introduced into the integrated discharge pipeline 3200.

[0149] Some of the airflow discharged from the inside of the integrated discharge pipeline 3200 is introduced into the interference reduction unit 3840 positioned between the first process chamber 280a and the second process chamber 280b. The airflow introduced into the interference reduction pipeline 3840 stays in the buffer space provided in the buffer member 3880. The interference reduction unit 3800 is arranged between the first process chamber 280a where the spin coating immersion step is performed and the second process chamber 280b where the substrate loading step is performed, so that some of the airflow in the integrated discharge pipeline 3200 stays in the buffer member 3880.

[0150] As a result, all of the airflow reaching the first process chamber 280a in the integrated discharge pipeline 3200 can be minimized. The internal pressure of the first process chamber 280a can be maintained. As a result, the sloshing of the developer solution maintained on the substrate W in the first process chamber can be minimized. The buffer member 3800 is provided to prevent the airflow including various particles, fumes, etc. generated from the inside of the second process chamber 280b from leaking to the outside of the integrated discharge pipeline 3200.

[0151] Refer to Figure 16 , the high-speed rotation step is performed in the first process chamber 280a. The first support unit 2830a rotates at a speed higher than the speed during the developer solution supply step or / and the spin coating immersion step. The controller 4000 opens the first valve 3620. The internal atmosphere of the first process chamber 280a is discharged through the first discharge pipeline 3420 connected to the integrated discharge pipeline 3200.

[0152] In the second process chamber 280b, a developing solution supply step is performed. The second liquid supply unit 2850b discharges the developing solution onto the substrate W that is placed on the second support unit 2830b in the second process chamber 280b and is rotating. The controller 4000 opens the second valve 3640. The internal atmosphere of the second process chamber 280b is discharged through the second discharge pipeline 3440 connected to the integrated discharge pipeline 3200.

[0153] When the substrate loading step, which is the previous step of the developing solution supply step, is performed in the second process chamber 280b, some of the airflow staying in the buffer member 3880 is discharged again to the integrated discharge pipeline 3200. As a result, various particles and fumes contained in the airflow staying in the buffer space are discharged together with the airflow to the integrated discharge pipeline 3200.

[0154] In Figures 11 to 25 In the exemplary embodiment described, it is described that the process chamber 280 includes the first process chamber 280a and the second process chamber 280b, but it is not limited thereto, and a plurality (3 or a natural number greater than or equal to 3) of process chambers 280 may be provided.

[0155] Hereinafter, a method for processing a substrate according to an exemplary embodiment of the present invention will be described in detail. To perform the following substrate processing method, the substrate processing apparatus may be controlled by the controller 4000. For example, the controller 4000 may control the first valve 3620, the second valve 3640, and the door 3860 to perform the following substrate processing method. In addition, the following substrate processing method will be described by taking Figure 11 the exemplary embodiment of

[0156] Figure 26 FIG. is a flowchart showing a method for processing a substrate according to an exemplary embodiment of the present invention.

[0157] The developing process may sequentially perform a substrate loading step (S100), a developing solution supply step (S200), a spin coating immersion step (S300), a high-speed rotation step (S400), and a substrate unloading step (S700). The developing solution supply step (S200), the spin coating immersion step (S300), and the high-speed rotation step (S400) may be performed multiple times. The developing solution supply step (S200), the spin coating immersion step (S300), and the high-speed rotation step (S400) may be performed multiple times until a predetermined number of times is satisfied. The substrate processing method may further include a step (S500) of supplying deionized water (DIW) to the substrate and a drying step (S600) after the high-speed rotation step (S400).

[0158] In the substrate loading step (S100), the substrate W is fed into the process chamber 280. The substrate W can be placed on the main body 2832 of the support unit 2830 in the process chamber 280 by the transfer robot 224. The substrate W is moved in the upward direction by the transfer robot 224. In the substrate loading step (S100), the internal atmosphere of the process chamber 280 can be discharged.

[0159] In the developer supply step (S200), the developer is supplied onto the substrate W mounted in the support unit 2830. In the developer supply step (S200), the substrate W rotates at a first speed. In the developer supply step (S200), the internal atmosphere of the process chamber 280 can be discharged.

[0160] In the spin-dip step (S300), the supply of the developer onto the substrate W is stopped and the developer supplied onto the substrate W is maintained. In the spin-dip step (S300), the substrate W rotates at a second speed slower than the first speed. Optionally, in the spin-dip step (S300), the substrate W can be stopped. In the spin-dip step (S300), the internal atmosphere of the process chamber 280 can be discharged without closing the discharge valve 3600. Optionally, the internal atmosphere of the process chamber 280 can be discharged such that the amount of discharge can be less than the amount of discharge in the developer supply step (S200).

[0161] The high-speed rotation step is a process for removing the developer maintained on the substrate W by the spin-dip step. In the high-speed rotation step (S400), the substrate W rotates at a third speed faster than the first speed. The developer maintained on the substrate is removed by centrifugal force.

[0162] In the step (S500) of supplying deionized water (DIW), DIW can be supplied onto the rotating substrate. In the drying step (S600), the substrate is rotated to remove the liquid remaining on the substrate. Optionally, in the drying step (S600), isopropyl alcohol (IPA) can be supplied onto the substrate. In the substrate unloading step (S500), the substrate W is taken out of the process chamber 280. The substrate W can be taken out of the process chamber 280 by the transfer robot 224. In the substrate unloading step (S500), the internal atmosphere of the process chamber 280 can be discharged.

[0163] The spin coating immersion step (S300) is performed in the first process chamber 280a and the substrate loading step (S100) is performed in the second process chamber 280b. The first valve 3620 of the first process chamber 280a is closed or the opening rate of the first valve is adjusted to be less than the opening rate of the second valve 3640. The second valve 3640 of the second process chamber 280b is opened or the opening rate of the second valve 3640 is adjusted to be less than the opening rate of the first valve 3620. The door 3860 of the path positioned between the first process chamber 280a and the second process chamber 280b is opened. Some of the air flow discharged from inside the integrated discharge pipeline 3200 is discharged to the outside of the integrated discharge pipeline 3200 through the door 3860.

[0164] Since the developing solution is maintained in the first process chamber 280a, the internal pressure of the first process chamber 280a should be maintained. When the substrate W moves downward in the second process chamber 280b, the air layer descends inside the second process chamber 280b. The internal atmosphere of the second process chamber 280b and the descending pressure of the air layer generated during the substrate loading process are discharged together to the integrated discharge pipeline 3200. A larger amount than the general discharge amount discharged into the integrated discharge pipeline 3200 after the substrate loading step (S100) is discharged during the substrate loading step (S100). The large amount of discharge air flow formed inside the second process chamber 280b is distributed by opening the door 3860 positioned between the first process chamber 280a and the second process chamber 280b to reduce the discharge interference in the first process chamber 280a where the spin coating immersion step (S300) is being performed.

[0165] Return to reference Figures 3 to 5 , the interface module 50 connects the processing module 20 and the external exposure device 60. The interface module 50 includes an interface frame 520, an additional process chamber 540, an interface buffer 560, and a transfer member 580.

[0166] The interface frame 520 provides an internal space. A fan filter unit for forming a downward air flow can be provided at the upper end of the interface frame 520. The additional process chamber 540, the interface buffer 560, and the transfer member 580 are provided in the internal space of the interface frame 520.

[0167] The additional process chamber 540 can perform a predetermined additional process before feeding the substrate W that has completed the process in the coating block 20a into the exposure apparatus 60. Optionally, the additional process chamber 540 can perform a predetermined additional process before feeding the substrate W that has completed the process in the exposure apparatus 60 into the developing block 30b. According to an example, the additional process can be an edge exposure process for exposing the edge region of the substrate W, a top surface cleaning process for cleaning the top surface of the substrate W, or a bottom surface cleaning process for cleaning the bottom surface of the substrate W. A plurality of additional process chambers 540 can be provided, and the plurality of additional process chambers can be arranged to be stacked on top of each other. All the additional process chambers 540 can be arranged to perform the same process. Optionally, some of the additional process chambers 540 can be arranged to perform different processes.

[0168] The interface buffer 560 provides a space in which the substrate W transferred between the coating block 20a, the additional process chamber 540, the exposure apparatus 60, and the developing block 30b can temporarily stay midway through the transfer. A plurality of interface buffers 560 can be provided, and the plurality of interface buffers 560 can be arranged to be stacked on top of each other. According to an example, the additional process chamber 540 can be arranged on one side surface based on the extension line of the longitudinal direction of the transfer chamber 220, and the interface buffer 560 can be arranged on the other side surface.

[0169] The transfer member 580 transfers the substrate W between the coating block 20a, the additional process chamber 540, the exposure device 60, and the developing block 30b. The transfer member 580 can be arranged as one or more manipulators. According to an example, the transfer member 580 includes a first manipulator 5820, a second manipulator 5840, and a third manipulator 5860. The first manipulator 5820 transfers the substrate W between the coating block 20a, the additional process chamber 540, and the interface buffer 560. The second manipulator 5840 transfers the substrate W between the interface buffer 560 and the exposure apparatus 60. The third manipulator 5860 transfers the substrate W between the interface buffer 560 and the developing block 30b.

[0170] Each of the first robot arm 5820, the second robot arm 5840, and the third robot arm 5860 includes a hand for placing the substrate W. The hand can be configured to be movable back and forth, rotatable about the third direction 6 as an axis, and movable in the third direction 6. All of the hands of the first robot arm 5820, the second robot arm 5840, and the third robot arm 5860 can be configured in the same or similar shape as the transfer hand 2240 of the transfer robot arm 224. Optionally, the hand of the robot arm that directly sends the substrate W to the cooling plate 2642 of the heat treatment chamber or receives the substrate W from the cooling plate of the heat treatment chamber can be configured in the same or similar shape as the transfer hand 2240 of the transfer robot arm 224, and the hands of the remaining robot arms can be configured in a shape different from that of the transfer hand of the transfer robot arm.

[0171] The foregoing detailed description illustrates the present invention. In addition, the above content shows and describes exemplary embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, within the scope of the inventive concept disclosed in this specification, the scope equivalent to the inventive concept of this disclosure, and / or within the scope of the technology or knowledge in the art, the foregoing content can be modified or corrected. The foregoing exemplary embodiments describe the best state of implementing the technical spirit of the present invention, and various changes required in the specific application fields and uses of the present invention are possible. Accordingly, the foregoing detailed description of the present invention is not intended to limit the present invention to the disclosed exemplary embodiments. In addition, the appended claims should be construed to also include other exemplary embodiments.

Claims

1. An apparatus for processing a substrate, the apparatus comprising: A first process chamber having a first processing space therein; A second process chamber having a second processing space therein; And An exhaust unit configured to exhaust the atmospheres of the first processing space and the second processing space, Wherein the exhaust unit includes: An integrated exhaust pipeline in which a decompression unit is installed, A first exhaust pipeline configured to connect a first point of the first process chamber and the integrated exhaust pipeline, A second exhaust pipeline configured to connect a second point of the first process chamber and the integrated exhaust pipeline, and An interference mitigation unit configured to mitigate exhaust interference between the first process chamber and the second process chamber; Wherein the interference mitigation unit includes an exhaust unit positioned in the integrated exhaust pipeline between the first point to which the first exhaust pipeline is connected and the second point to which the second exhaust pipeline is connected to discharge some of the airflow in the integrated exhaust pipeline to the outside of the integrated exhaust pipeline.

2. The apparatus for processing a substrate according to claim 1, wherein, The exhaust unit is arranged to discharge some of the airflow in the integrated exhaust pipeline to the atmosphere.

3. The apparatus for processing a substrate according to claim 2, wherein, The exhaust unit further includes a door for opening / closing a path through which the airflow is discharged from the integrated exhaust pipeline to the atmosphere.

4. The apparatus for processing a substrate according to claim 3, wherein, Each of the first process chamber and the second process chamber is arranged to perform a developing process for the substrate, The developing process includes: a substrate loading step of feeding the substrate into the first process chamber or the second process chamber, a developing solution supply step of supplying a developing solution onto the substrate while rotating the substrate at a first speed, a spin rinse step of stopping supplying the developing solution onto the substrate and stopping the substrate for a predetermined time or rotating the substrate at a second speed lower than the first speed, and a substrate unloading step of taking the substrate out of the first process chamber or the second process chamber, and The apparatus further includes a controller configured to control the door to open the path when performing the spin rinse step on the substrate in the first process chamber.

5. The apparatus for processing a substrate according to claim 4, wherein, The substrate loading step includes a process of moving the substrate in a downward direction, and The controller controls the door to open the path when performing the substrate loading step in the second process chamber.

6. The apparatus for processing a substrate according to claim 3, wherein, Each of the first process chamber and the second process chamber is arranged to perform a developing process for the substrate, The developing process includes: a substrate loading step of feeding the substrate into the first process chamber or the second process chamber, a developing solution supply step of supplying a developing solution onto the substrate while rotating the substrate at a first speed, a spin rinse immersion step of stopping the supply of the developing solution onto the substrate and stopping the substrate for a predetermined time or rotating the substrate at a second speed lower than the first speed, and a substrate unloading step of taking the substrate out of the first process chamber or the second process chamber, and the apparatus further includes a controller configured to control the gate to open the path when performing the spin rinse immersion step on the substrate in the first process chamber and performing the substrate loading step in the second process chamber.

7. The device according to any one of claims 4 to 6, wherein The discharge unit further includes: a first valve that opens / closes the first discharge pipeline or adjusts the discharge flow rate, and a second valve that opens / closes the second discharge pipeline or adjusts the discharge flow rate, and the controller controls the first valve such that the opening rate of the first valve when performing the spin rinse immersion step on the substrate in the first process chamber is less than the opening rate of the first valve when performing the developing solution supply step.

8. The apparatus for processing a substrate according to any one of claims 1 to 6, wherein, The discharge unit includes: a first discharge unit positioned adjacent to the first point of the first discharge pipeline, and a second discharge unit positioned adjacent to the second point of the second discharge pipeline.

9. The apparatus for processing a substrate according to claim 1, wherein, The discharge unit includes: an interference mitigation pipeline, one end of which is connected to the integrated discharge pipeline, and a buffer member connected to the interference mitigation pipeline and providing a buffer space in which the airflow discharged from the integrated discharge pipeline through the interference mitigation pipeline stays.

10. An apparatus for processing a substrate, the apparatus including: a first process chamber having a first processing space; a second process chamber having a second processing space; a transfer robot configured to transfer the substrate to the first process chamber or the second process chamber; and a discharge unit configured to discharge the atmosphere of the first processing space and the second processing space, wherein the first process chamber includes: a first processing container configured to provide the first processing space, a first support unit configured to support and rotate the substrate in the first processing space; and a first developing solution supply unit configured to supply a developing solution onto the substrate, the second process chamber includes: a second processing container configured to provide the second processing space, a second support unit configured to support and rotate the substrate in the second processing space, and A second developer supply unit configured to supply the developer onto the substrate, The discharge unit includes: An integrated discharge pipeline in which a decompression unit is installed, A first discharge pipeline connecting a first point of the first process chamber and the integrated discharge pipeline, A second discharge pipeline connecting a second point of the first process chamber and the integrated discharge pipeline, and An interference mitigation unit configured to mitigate discharge interference between the first process chamber and the second process chamber by allowing some of the airflow in the integrated discharge pipeline to flow outside the integrated discharge pipeline, and The interference mitigation unit includes a discharge unit positioned in the integrated discharge pipeline between the first point to which the first discharge pipeline is connected and the second point to which the second discharge pipeline is connected.

11. The apparatus for processing a substrate according to claim 10, wherein, The interference mitigation unit further includes a door for opening / closing a path through which the airflow is discharged from the integrated discharge pipeline to the atmosphere.

12. The apparatus for processing a substrate according to claim 11, wherein, Each of the first process chamber and the second process chamber is configured to perform a developing process for the substrate, The developing process includes: a substrate loading step of feeding the substrate into the first process chamber or the second process chamber, a developer supply step of supplying the developer onto the substrate while rotating the substrate at a first speed, a spin rinse immersion step of stopping the supply of the developer onto the substrate and allowing the substrate to stop for a predetermined time or rotating the substrate at a second speed lower than the first speed, and a substrate unloading step of removing the substrate from the first process chamber or the second process chamber, and The substrate loading step includes a process of moving the substrate in a downward direction, and The apparatus further includes a controller configured to control the door to open the path when performing the spin rinse immersion step on the substrate in the first process chamber and the substrate loading step in the second process chamber.

13. The apparatus for processing a substrate according to claim 10, wherein, The interference mitigation unit includes: An interference mitigation pipeline having one end connected to the integrated discharge pipeline, and A buffer member connected to the interference mitigation pipeline and providing a buffer space in which the airflow discharged from the integrated discharge pipeline through the interference mitigation pipeline stays.

14. A method for processing a substrate using the apparatus for processing a substrate according to any one of claims 1 to 13, the method comprising: Performing a developing process on the substrate in each processing space while discharging the atmosphere in the processing space of each of a plurality of process chambers through the same integrated discharge pipeline; The developing process includes: a substrate loading step of moving the substrate in a downward direction and placing the substrate in a support unit, a developing solution supply step of supplying a developing solution onto the substrate, a spin immersion step of stopping the supply of the developing solution onto the substrate and maintaining the substrate on the support unit for a predetermined time, and a substrate unloading step of moving the substrate in an upward direction and lifting the substrate from the support unit, and in the case of performing the developing process, causing an air flow flowing from a first process chamber, which is one of the process chambers, to a second process chamber, which is another process chamber among the process chambers, to flow outside an integrated discharge line between the first process chamber and the second process chamber adjacent to each other, so as to reduce an air flow change in a processing space of the first process chamber that interferes with a pressure in a processing space of the second process chamber.

15. The method for processing a substrate according to claim 14, wherein, Emit some of the air flow in the integrated discharge line into the atmosphere between the first process chamber and the second process chamber.

16. The method for processing a substrate according to claim 14, wherein, Emit some of the air flow in the integrated discharge line onto a buffer member connected to the integrated discharge line between the first process chamber and the second process chamber.

17. The method for processing a substrate according to claim 14, wherein, A gate is provided between a first point where the integrated discharge line is connected to the second process chamber and a second point where the integrated discharge line is connected to the second process chamber, the gate being for opening / closing an opening for emitting the air flow in the integrated discharge line into the atmosphere, and when the spin immersion step is performed in the first process chamber, the opening is opened.

18. The method for processing a substrate according to claim 14, wherein, A gate is provided between a first point where the integrated discharge line is connected to the second process chamber and a second point where the integrated discharge line is connected to the second process chamber, the gate being for opening / closing an opening for emitting the air flow in the integrated discharge line into the atmosphere, and when the substrate loading step is performed in the second process chamber, the opening is opened.

19. The method for processing a substrate according to claim 14, wherein, A gate is provided between a first point where the integrated discharge line is connected to the second process chamber and a second point where the integrated discharge line is connected to the second process chamber, the gate being for opening / closing an opening for emitting the air flow in the integrated discharge line into the atmosphere, and when the spin immersion step is performed in the first process chamber and the substrate loading step is performed in the second process chamber, the opening is opened.

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