A boost ignition circuit

Abstract

The application discloses a boosting ignition circuit and belongs to the technical field of fuzes. The boosting ignition circuit comprises a main controller, a sinusoidal oscillation circuit, a shaping circuit, a boosting circuit and an ignition control circuit. The boosting ignition circuit solves the technical problem of high reliability of fuze ignition. The boosting ignition circuit is stable and reliable, and double gate control guarantees safety. The boosting ignition circuit can be applied in applications with small ignition current demand.

Description

Technical Field

[0001] This invention belongs to the field of fuze technology, and particularly relates to a boost ignition circuit. Background Technology

[0002] In recent years, the probability of ballistic explosions of fuses used in military operations has increased, especially with large-caliber artillery, which is the mainstay of the army and navy's firepower, such as 155mm howitzer and 122mm howitzer ammunition, as well as naval 76mm naval guns. In addition, there are also muzzle explosions (such as the DQSI fuse for a certain rifle grenade and the gun-shaped fuse for training aircraft guns, the "Pao-Yun 25"), transport explosions (such as the "Grenade 1A" fuse for a certain rifle grenade), detection explosions (such as the fuse for a 30kg pellet ammunition), and misfire fuses causing explosive disposal explosions (such as the fuse for a certain individual rocket). Summary of the Invention

[0003] The purpose of this invention is to provide a boost ignition circuit that solves the technical problem of high reliability of fuze ignition.

[0004] To achieve the above objectives, the present invention adopts the following technical solution:

[0005] A boost ignition circuit includes a main controller, a sinusoidal oscillation circuit, a shaping circuit, a boost circuit, and an ignition control circuit. The sinusoidal oscillation circuit is used to output a sinusoidal oscillation signal, and the output terminal of the sinusoidal oscillation circuit is connected to the shaping circuit.

[0006] The shaping circuit includes AND gate U2A, NAND gate U3A, NAND gate U3C, NAND gate U3B, NAND gate U3D and resistor R13. The second input of NAND gate U3A is connected to one I / O port of the main controller, the first input is connected to the VCC power supply, and the output is connected to the second input of AND gate U2A. The first input of AND gate U2A is connected to the output of the sine oscillation circuit and the output is connected to the second input of NAND gate U3B. The first input of NAND gate U3B is connected to one I / O port of the main controller and the output is connected to the boost circuit. The first input of NAND gate U3C is connected to the second input of NAND gate U3B and the second input of NAND gate U3C is connected to the first input of NAND gate U3B. The second input of NAND gate U3C is also connected to the ground wire through resistor R13. The output of NAND gate U3C is connected to the two inputs of NAND gate U3D, and the output of NAND gate U3D is connected to the boost circuit.

[0007] The boost circuit is used to boost the shaped signal output by the shaping circuit, and the output terminal of the boost circuit outputs the boosted voltage SYDH.

[0008] The ignition control circuit includes a logic circuit and a drive circuit. The logic circuit includes an AND gate U2C and a NAND gate U5D. The second input of the AND gate U2C is connected to the second input of the NAND gate U3A, the first input is connected to an I / O port of the main controller, and the output is connected to the second input of the NAND gate U5D. The first input of the NAND gate U5D is connected to the VCC power supply, and the output is connected to the drive circuit.

[0009] The driving circuit is a transistor driving circuit composed of transistor Q2 and its peripheral circuit. The base of transistor Q2 is connected to the output terminal of NAND gate U5D, the emitter is connected to the output terminal of the boost circuit, and the collector is connected to the ground through resistor R16. The collector of transistor Q2 is also used to provide ignition voltage to the external ignition resistor. One end of capacitor C102 is connected to the emitter of transistor Q2, and the other end is connected to the ground.

[0010] Preferably, the main controller is a single-chip microcomputer, specifically an STM32L152CBT6.

[0011] Preferably, the sinusoidal oscillation circuit includes a crystal oscillator Y2, a capacitor C32, and a capacitor C33. One end of the crystal oscillator Y2 is connected to the ground line through the capacitor C32, and the other end is connected to the ground line through the capacitor C33. The connection node between the crystal oscillator Y2 and the capacitor C33 is the output terminal of the sinusoidal oscillation circuit.

[0012] Preferably, capacitor C32 is 12pF and capacitor C33 is 15pF.

[0013] Preferably, the AND gate U2A is model 74HC08, and the NAND gates U3A, U3C, U3B and U3D are all model 74HC00.

[0014] Preferably, the boost circuit includes diodes D3, D4, D2, and D1, capacitors C5, C7, C6, and C8, and resistor R8. The output of NAND gate U3B is connected to the negative terminal of diode D3 through capacitor C5, and the positive terminal of diode D3 is connected to the output of NAND gate U3D. The negative terminal of diode D2 is connected to the positive terminal of diode D3 through capacitor C7, and the positive terminal of diode D2 is connected to the negative terminal of diode D3. The negative terminal of diode D4 is connected to the positive terminal of diode D2 through capacitor C6, and the positive terminal of diode D4 is connected to the negative terminal of diode D2. The negative terminal of diode D1 is connected to the positive terminal of diode D4 through capacitor C8, and the negative terminal of diode D1 is connected to the negative terminal of diode D4. The positive terminal of diode D1 is connected to one end of resistor R8, and the other end of resistor R8 is the output terminal of the boost circuit.

[0015] Preferably, the driving circuit further includes resistors R11 and R52. Resistor R11 is connected between the base and emitter of transistor Q2, and one end of resistor R52 is connected to the emitter of transistor Q2 and the other end is connected to ground.

[0016] Preferably, the AND gate U2C is model 74HC08, and the NAND gate U3B, AND gate U3D, AND gate U3C, and AND gate U5D are all model 74HC00.

[0017] Preferably, the diodes D3, D4, D2 and D1 are all of type 1N4148.

[0018] The boost ignition circuit described in this invention solves the technical problem of high reliability of fuze ignition. The ignition circuit of this invention is stable and reliable, and the dual-gate control ensures safety. It can be applied to applications with low ignition current requirements. Attached Figure Description

[0019] Figure 1 This is a block diagram of the circuit of the present invention;

[0020] Figure 2 This is a circuit diagram of the sinusoidal oscillation circuit of the present invention;

[0021] Figure 3 This is a circuit diagram of the shaping circuit of the present invention;

[0022] Figure 4 This is a circuit diagram of the boost circuit of the present invention;

[0023] Figure 5 This is a circuit diagram of the ignition control circuit of the present invention;

[0024] Figure 6 This is a circuit diagram of the main controller of the present invention. Detailed Implementation

[0025] Depend on Figures 1-6 The illustrated boost ignition circuit includes a main controller, a sinusoidal oscillation circuit, a shaping circuit, a boost circuit, and an ignition control circuit. The sinusoidal oscillation circuit is used to output a sinusoidal oscillation signal, and the output terminal of the sinusoidal oscillation circuit is connected to the shaping circuit.

[0026] The main controller is a single-chip microcomputer, model STM32L152CBT6.

[0027] The sinusoidal oscillation circuit includes a crystal oscillator Y2, capacitor C32, and capacitor C33. One end of crystal oscillator Y2 is connected to ground through capacitor C32, and the other end is connected to ground through capacitor C33. The connection point between crystal oscillator Y2 and capacitor C33 is the output terminal of the sinusoidal oscillation circuit. Capacitor C32 has a capacitance of 12pF, and capacitor C33 has a capacitance of 15pF.

[0028] In this embodiment, in the sinusoidal oscillation circuit, the crystal oscillator Y2 generates a sinusoidal oscillation signal and outputs it to the shaping circuit for shaping processing.

[0029] The shaping circuit includes AND gate U2A, NAND gate U3A, NAND gate U3C, NAND gate U3B, NAND gate U3D, and resistor R13. The second input of NAND gate U3A is connected to an I / O port of the main controller (circuit network number begin), the first input is connected to the VCC power supply, and the output is connected to the second input of AND gate U2A. The first input of AND gate U2A is connected to the output of the sinusoidal oscillation circuit, and the output is connected to the second input of NAND gate U3B. The first input of NAND gate U3B is connected to an I / O port of the main controller (circuit network number synkz), and the output is connected to the boost circuit. The first input of NAND gate U3C is connected to the second input of NAND gate U3B, and the second input of NAND gate U3C is connected to the first input of NAND gate U3B. The second input of NAND gate U3C is also connected to ground through resistor R13. The output of NAND gate U3C is connected to the two inputs of NAND gate U3D, and the output of NAND gate U3D is connected to the boost circuit.

[0030] The AND gate U2A is model number 74HC08, and the NAND gates U3A, U3C, U3B, and U3D are all model number 74HC00.

[0031] After the main controller controls NAND gate U3A via the begin signal line, it outputs a pulse signal at pin 3 of U2A, i.e., the output terminal. Pin 1 of AND gate U2A, i.e., the first input terminal of AND gate U2A, is connected to the sine wave output from crystal oscillator Y2. After being shaped by AND gate U2A and NAND gate U3A, the sine wave signal is shaped into a TTL pulse signal. Then, after secondary control by the logic control circuit composed of NAND gates U3B, U3C, and U3D, the shaped signal is output to the boost circuit.

[0032] The first input of the NAND gate U3B is controlled through an I / O port of the main controller.

[0033] In this embodiment, two control signals are required before the boost circuit to enable the shaping circuit to output the shaping signal. Both control signals are output from the I / O port of the main controller. One control controls the second input terminal of the NAND gate U3A and the other control the first input terminal of the NAND gate U3B, thereby ensuring the stability of the boost circuit.

[0034] When both control signals are high, the shaping circuit outputs an ignition pulse signal through NAND gates U3B and U3D.

[0035] The boost circuit is used to boost the shaped signal output by the shaping circuit, and the output terminal of the boost circuit outputs the boosted voltage SYDH.

[0036] The boost circuit includes diodes D3, D4, D2, and D1, capacitors C5, C7, C6, and C8, and resistor R8. The output of NAND gate U3B is connected to the negative terminal of diode D3 through capacitor C5. The positive terminal of diode D3 is connected to the output of NAND gate U3D. The negative terminal of diode D2 is connected to the positive terminal of diode D3 through capacitor C7, and the positive terminal of diode D2 is connected to the negative terminal of diode D3. The negative terminal of diode D4 is connected to the positive terminal of diode D2 through capacitor C6, and the positive terminal of diode D4 is connected to the negative terminal of diode D2. The negative terminal of diode D1 is connected to the positive terminal of diode D4 through capacitor C8, and the negative terminal of diode D1 is connected to the negative terminal of diode D4. The positive terminal of diode D1 is connected to one end of resistor R8, and the other end of resistor R8 is the output terminal of the boost circuit.

[0037] The diodes D3, D4, D2, and D1 are all of type 1N4148.

[0038] In this embodiment, diodes D3, D4, D2, and D1 form a 4x boost circuit to boost the ignition pulse signal by 4x, thereby generating voltage SYDH.

[0039] The ignition control circuit includes a logic circuit and a drive circuit. The logic circuit includes an AND gate U2C and a NAND gate U5D. The second input of the AND gate U2C is connected to the second input of the NAND gate U3A, the first input is connected to an I / O port of the main controller (circuit network number ZIHUI in this embodiment), and the output is connected to the second input of the NAND gate U5D. The first input of the NAND gate U5D is connected to the VCC power supply, and the output is connected to the drive circuit.

[0040] The driving circuit is a transistor driving circuit composed of transistor Q2 and its peripheral circuit. The base of transistor Q2 is connected to the output terminal of NAND gate U5D, the emitter is connected to the output terminal of the boost circuit, and the collector is connected to the ground through resistor R16. The collector of transistor Q2 is also used to provide ignition voltage to the external ignition resistor. One end of capacitor C102 is connected to the emitter of transistor Q2, and the other end is connected to the ground.

[0041] The driving circuit also includes resistors R11 and R52. Resistor R11 is connected between the base and emitter of transistor Q2, and one end of resistor R52 is connected to the emitter of transistor Q2 and the other end is connected to ground.

[0042] The AND gate U2C is model number 74HC08, and the AND gates U3B, U3D, U3C, and U5D are all model number 74HC00.

[0043] The main controller sends control signals begin and ZIHUI to control the conduction of transistor Q2: First, the base voltage is controlled to be low level after passing through AND gate U2C and NAND gate U5D. At this time, transistor Q2 is turned on. The voltage on both sides of C102 after boosting is conducted through the collector and emitter of Q2. The voltage at the collector of transistor Q2 (circuit network number BXS) is connected to the external small resistor circuit to start ignition.

[0044] In this embodiment, the main controller, sine oscillation circuit, shaping circuit, boost circuit, and ignition control circuit are all powered by an external power source, which can be a battery.

[0045] The boost ignition circuit described in this invention solves the technical problem of high reliability of fuze ignition. The ignition circuit of this invention is stable and reliable, and the dual-gate control ensures safety. It can be applied to applications with low ignition current requirements.

Claims

1. A boost ignition circuit, characterized in that: It includes a main controller, a sinusoidal oscillation circuit, a shaping circuit, a boost circuit, and an ignition control circuit. The sinusoidal oscillation circuit is used to output a sinusoidal oscillation signal, and the output terminal of the sinusoidal oscillation circuit is connected to the shaping circuit. The shaping circuit includes AND gate U2A, NAND gate U3A, NAND gate U3C, NAND gate U3B, NAND gate U3D and resistor R13. The second input of NAND gate U3A is connected to one I / O port of the main controller, the first input is connected to the VCC power supply, and the output is connected to the second input of AND gate U2A. The first input of AND gate U2A is connected to the output of the sine oscillation circuit and the output is connected to the second input of NAND gate U3B. The first input of NAND gate U3B is connected to one I / O port of the main controller and the output is connected to the boost circuit. The first input of NAND gate U3C is connected to the second input of NAND gate U3B and the second input of NAND gate U3C is connected to the first input of NAND gate U3B. The second input of NAND gate U3C is also connected to the ground wire through resistor R13. The output of NAND gate U3C is connected to the two inputs of NAND gate U3D, and the output of NAND gate U3D is connected to the boost circuit. The boost circuit is used to boost the shaped signal output by the shaping circuit, and the output terminal of the boost circuit outputs the boosted voltage SYDH. The ignition control circuit includes a logic circuit and a drive circuit. The logic circuit includes an AND gate U2C and a NAND gate U5D. The second input of the AND gate U2C is connected to the second input of the NAND gate U3A, the first input is connected to an I / O port of the main controller, and the output is connected to the second input of the NAND gate U5D. The first input of the NAND gate U5D is connected to the VCC power supply, and the output is connected to the drive circuit. The driving circuit is a transistor driving circuit composed of transistor Q2 and its peripheral circuit. The base of transistor Q2 is connected to the output terminal of NAND gate U5D, the emitter is connected to the output terminal of the boost circuit, and the collector is connected to the ground through resistor R16. The collector of transistor Q2 is also used to provide ignition voltage to the external ignition resistor. One end of capacitor C102 is connected to the emitter of transistor Q2, and the other end is connected to the ground.

2. The boost ignition circuit as described in claim 1, characterized in that: The main controller is a single-chip microcomputer, model STM32L152CBT6.

3. The boost ignition circuit as described in claim 1, characterized in that: The sinusoidal oscillation circuit includes a crystal oscillator Y2, a capacitor C32, and a capacitor C33. One end of the crystal oscillator Y2 is connected to the ground through the capacitor C32, and the other end is connected to the ground through the capacitor C33. The connection point between the crystal oscillator Y2 and the capacitor C33 is the output terminal of the sinusoidal oscillation circuit.

4. The boost ignition circuit as described in claim 3, characterized in that: The capacitor C32 has a capacitance of 12pF, and the capacitor C33 has a capacitance of 15pF.

5. A boost ignition circuit as described in claim 1, characterized in that: The AND gate U2A is model number 74HC08, and the NAND gates U3A, U3C, U3B, and U3D are all model number 74HC00.

6. The boost ignition circuit as described in claim 1, characterized in that: The boost circuit includes diodes D3, D4, D2, and D1, capacitors C5, C7, C6, and C8, and resistor R8. The output of NAND gate U3B is connected to the negative terminal of diode D3 through capacitor C5. The positive terminal of diode D3 is connected to the output of NAND gate U3D. The negative terminal of diode D2 is connected to the positive terminal of diode D3 through capacitor C7, and the positive terminal of diode D2 is connected to the negative terminal of diode D3. The negative terminal of diode D4 is connected to the positive terminal of diode D2 through capacitor C6, and the positive terminal of diode D4 is connected to the negative terminal of diode D2. The negative terminal of diode D1 is connected to the positive terminal of diode D4 through capacitor C8, and the negative terminal of diode D1 is connected to the negative terminal of diode D4. The positive terminal of diode D1 is connected to one end of resistor R8, and the other end of resistor R8 is the output terminal of the boost circuit.

7. A boost ignition circuit as described in claim 1, characterized in that: The driving circuit also includes resistors R11 and R52 and capacitor C102. Resistor R11 is connected between the base and emitter of transistor Q2. One end of resistor R52 is connected to the emitter of transistor Q2 and the other end is connected to ground. Capacitor C102 is connected in parallel with resistor R52.

8. A boost ignition circuit as described in claim 1, characterized in that: The AND gate U2C is model number 74HC08, and the AND gates U3B, U3D, U3C, and U5D are all model number 74HC00.

9. A boost ignition circuit as described in claim 6, characterized in that: The diodes D3, D4, D2, and D1 are all of type 1N4148.

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