A device and method for forming a reference chamber of a thin film vacuum gauge

Abstract

The present invention relates to the field of thin film capacitance vacuum gauges, and provides a thin film vacuum gauge reference chamber forming device and method, including: a degassing module, including a baking chamber, and a first vacuum pump group for evacuating the baking chamber; a clamping module, including a main chamber, a clamping mechanism arranged in the main chamber, and a second vacuum pump group for evacuating the main chamber; the main chamber is arranged downstream of the baking chamber, and is connected to the baking chamber through a first valve that can be controlled to open and close; a transmission module, used to make the sample to be processed be sealed and transmitted between the degassing module and the clamping module; a gas backfilling module, which has a plurality of backfilling branches that can be controlled to open and close, and is connected to the degassing module and the clamping module, and is used to backfill gas into the degassing module and the clamping module. The problem of high temperature and large void rate of vacuum welding is avoided, and the sealing of the sealing area is ensured; baking degassing is used before sealing to accelerate the degassing of the sample material to be processed, and the vacuum degree inside the reference chamber is improved.

Description

Technical Field

[0001] The present invention relates to the field of thin film capacitance vacuum gauges, and in particular to a device and method for forming a reference chamber of a thin film vacuum gauge. Background Art

[0002] At present, thin film capacitance vacuum gauges use the deformation of elastic diaphragms under the action of pressure difference, which causes the capacitance of the capacitor composed of the diaphragm and fixed electrodes to change. By measuring the change in capacitance, the pressure difference can be characterized and the vacuum degree can be measured. Compared with other types of vacuum gauges, it has many advantages such as high measurement accuracy, good linearity, good output repeatability and long-term stability, and the measurement results are independent of gas composition and type. It is widely used in vacuum measurement, surface treatment, coating equipment, aerospace and other fields.

[0003] The gauge is an important component of the thin film capacitance vacuum gauge. The elastic diaphragm is installed in the gauge and divides the gauge into two small chambers. One of the small chambers is connected to the measured system and is the process chamber. The other small chamber is used as a reference chamber. The reference chamber is a high vacuum chamber and is called an absolute pressure capacitance vacuum gauge.

[0004] In the related art, there are two main methods for forming a high vacuum in the reference chamber of a thin film vacuum gauge:

[0005] One is to place the sample in a high temperature and high vacuum environment and seal it using high temperature eutectic welding, brazing or glass sintering. However, vacuum welding has a large void rate, which affects the sealing of the sealing area and may affect the maintenance of the vacuum degree in the reference chamber.

[0006] The second method is to use oxygen-free copper as the sealing material and use a clamp sealing device to perform clamp sealing under the condition of continuous vacuuming. However, the degassing process before sealing is not sufficient, and it is difficult to improve the vacuum degree in the reference chamber.

[0007] Therefore, how to ensure the vacuum degree in the reference chamber is an important issue that needs to be urgently solved in the industry. Summary of the invention

[0008] The present invention provides a thin film vacuum gauge reference chamber forming device and method, which are used to solve the defect that the vacuum degree in the reference chamber is difficult to ensure in the prior art, so as to improve the ultimate vacuum value in the reference chamber.

[0009] The present invention provides a thin film vacuum gauge reference chamber forming device, comprising:

[0010] The degassing module comprises a baking chamber which can be heated and controlled to be opened and closed, and a first vacuum pump group for evacuating the baking chamber;

[0011] The clamping module comprises a main chamber that can be controlled to open and close, a clamping mechanism arranged in the main chamber, and a second vacuum pump group for evacuating the main chamber; the main chamber is arranged downstream of the baking chamber and is connected to the baking chamber through a first valve that can be controlled to open and close;

[0012] A conveying module, used for conveying the sample to be processed between the degassing module and the clamping module in a sealed manner;

[0013] The gas backfilling module has a plurality of backfilling branches with controllable on / off, and is connected to the degassing module and the clamping module, and is used for backfilling gas into the degassing module and the clamping module.

[0014] According to a thin film vacuum gauge reference chamber forming device provided by the present invention, the degassing module also includes a degassing pre-chamber arranged upstream of the baking chamber, the degassing pre-chamber is connected to the baking chamber via a second openable and closable valve, one of the backfill branches of the gas backfill module is connected to the degassing pre-chamber, and the first vacuum pump group is connected to the degassing pre-chamber.

[0015] According to a thin film vacuum gauge reference chamber forming device provided by the present invention, the first vacuum pump group includes a first dry pump and a cryogenic pump, the cryogenic pump is connected to the baking chamber, and the first dry pump is connected to the degassing pre-chamber.

[0016] According to a thin film vacuum gauge reference chamber forming device provided by the present invention, the first dry pump is connected to the baking chamber via a first branch whose opening and closing can be controlled.

[0017] According to a thin film vacuum gauge reference chamber forming device provided by the present invention, the clamping module also includes an openable and closable discharge chamber, the discharge chamber is arranged downstream of the main chamber, and is connected to the main chamber through a third valve, one of the backfill branches of the gas backfill module is connected to the discharge chamber, and the second vacuum pump group is connected to the discharge chamber.

[0018] According to a thin film vacuum gauge reference chamber forming device provided by the present invention, the second vacuum pump group includes a second dry pump and a molecular pump, the molecular pump is connected to the exhaust chamber, the second dry pump is connected to the molecular pump, and the second dry pump is connected to the discharge chamber.

[0019] According to a thin film vacuum gauge reference chamber forming device provided by the present invention, the second dry pump is connected to the main chamber via a second branch whose opening and closing can be controlled.

[0020] The present invention also provides a method for forming a reference chamber of a thin film vacuum gauge, comprising: baking and degassing, placing a sample to be processed in a closed environment, baking and vacuuming and degassing;

[0021] Exhaust clamp sealing: transport the sample to be processed after baking and degassing to a vacuum environment for vacuum exhaust, and then use the clamp sealing device located in the vacuum environment to seal the sample to be processed to form a sealed reference chamber with high vacuum inside.

[0022] According to a method for forming a thin film vacuum gauge reference chamber provided by the present invention, in the baking degassing, the baking temperature is 120-300 degrees Celsius, the time is 10-72 hours, and the vacuum degree is 10 -4 -10 -6 Pa.

[0023] According to a method for forming a reference chamber of a thin film vacuum gauge provided by the present invention, before the baking degassing, pre-degassing is also included, in which the sample to be processed is placed in a closed environment and evacuated to exhaust the air. After the vacuum degree reaches a set value, inert gas is backfilled, and then evacuated to exhaust the air. The above operation is repeated.

[0024] The present invention provides a thin film vacuum gauge reference chamber forming device and method. By setting a degassing module, a clamping module, a transmission module and a gas backfilling module, when forming the reference chamber, the sample to be processed is first placed in the degassing module for baking to accelerate the degassing of the sample material to be processed. The first vacuum pump group can maintain a high vacuum degree in the baking chamber to fully degas the interior of the reference chamber. The sample to be tested after baking and degassing is sealed and transmitted to the clamping module through the transmission module. The second vacuum pump group can keep the main chamber in a high vacuum state, and then the clamping mechanism is used to clamp the sample to be processed to form a reference chamber. The problems of high temperature and large void rate caused by vacuum welding are avoided, and the sealing of the sealing area is guaranteed; at the same time, baking and degassing are used before sealing to accelerate the degassing of the sample material to be processed, thereby improving the vacuum degree inside the reference chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0026] Figure 1 It is a schematic diagram of a thin film vacuum gauge reference chamber forming device provided by the present invention;

[0027] Figure 2 It is a schematic flow chart of a method for forming a reference chamber of a thin film vacuum gauge provided by the present invention.

[0028] Reference numerals:

[0029] 1. Degassing module; 10. Baking chamber; 101. Second vacuum gauge; 11. First vacuum pump group; 110. First dry pump; 111. Cryogenic pump; 112. Second stop valve; 113. First control valve; 114. First branch; 115. Third stop valve; 116. Fourth stop valve; 12. Heating mechanism; 13. Degassing pre-chamber; 130. First vacuum gauge; 14. Second valve; 2. Clamping module; 20. Main chamber; 200. Third vacuum gauge; 21. Clamping mechanism; 22. Second vacuum pump group; 220. Second dry pump; 221, molecular pump; 222, seventh stop valve; 223, second control valve; 224, second branch; 225, eighth stop valve; 23, discharge chamber; 230, ninth stop valve; 231, fourth vacuum gauge; 24, third valve; 3, transmission module; 4, gas backfill module; 40, first backfill branch; 400, first stop valve; 41, second backfill branch; 410, fifth stop valve; 42, third backfill branch; 420, sixth stop valve; 43, fourth backfill branch; 430, tenth stop valve; 5, first valve. DETAILED DESCRIPTION

[0030] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0031] In order to facilitate understanding of the thin film vacuum gauge reference chamber formation device and method provided by the present invention, its application scenario is first explained. In the prior art, there are generally two means of forming a reference chamber. One is to place the sample in a high temperature and high vacuum environment and seal it by eutectic welding, brazing, glass sintering, etc., but the vacuum welding void rate is relatively large, which affects the sealing of the sealing area and the vacuum degree in the reference chamber is difficult to maintain; the other is to use a clamping device to clamp in a continuous vacuum environment, relying on the ductility and deformation of copper to achieve the sealing of the port, but the degassing link is not sufficient, and it is difficult to ensure the vacuum degree in the reference chamber. Therefore, the present invention provides a thin film vacuum gauge reference chamber formation device and method to achieve a relatively high vacuum value at a relatively low operating temperature to ensure the sealing performance of the sealing area.

[0032] Combine the following Figure 1-Figure 2 The thin film vacuum gauge reference chamber forming apparatus and method of the present invention are described.

[0033] Reference Figure 1A thin film vacuum gauge reference chamber forming device comprises a degassing module 1, a clamping module 2, a conveying module 3 and a gas backfilling module 4. The degassing module 1 comprises a baking chamber 10 and a first vacuum pump group 11; the baking chamber 10 can be heated and can be controlled to be opened and closed, and is mainly used to bake the sample to be processed to accelerate the degassing of the sample material to be processed; the first vacuum pump group 11 is connected to the baking chamber 10, and is used to evacuate the baking chamber 10, so that the baking chamber 10 maintains a high vacuum degree, and fully degasses the interior of the reference chamber.

[0034] The clamping module 2 is located downstream of the degassing module 1, and is mainly used to clamp the sample to be processed after baking and degassing under high vacuum conditions to form a reference chamber. Specifically, it includes a main chamber 20, a clamping mechanism 21, and a second vacuum pump group 22; wherein the main chamber 20 can be opened and closed, and is connected to the baking chamber 10 through a first valve 5 that can be controlled to open and close; the second vacuum pump group 22 is connected to the main chamber 20, and is used to evacuate the main chamber 20 to keep the main chamber 20 at a high vacuum degree; the clamping mechanism 21 is arranged inside the main chamber 20, and is mainly used to clamp the sample to be processed under vacuum conditions to ensure that the reference chamber has a high vacuum degree. The clamping mechanism 21 is a prior art, and its principle can refer to the copper tube shearing and sealing machine. Because its own structure is not the main improvement point of the present invention, it will not be repeated here.

[0035] The conveying module 3 is arranged between the degassing module 1 and the clamping module 2, and mainly plays the role of closed transmission. The sample to be processed after baking and degassing is conveyed to the clamping module 2 through the conveying module 3 for clamping. During the transmission of the sample to be processed, it will not come into contact with the external environment, thereby reducing the problem of secondary adsorption of water vapor by the sample to be processed when exposed to the air, so as to shorten the vacuuming time of the second vacuum pump group 22 and increase the ultimate vacuum value in the reference chamber.

[0036] The gas backfill module 4 has a plurality of backfill branches that can be controlled to open and close, and the backfill branches are respectively connected to the degassing module 1 and the clamping module 2, and are mainly used to backfill inert gas into the degassing module 1 and the clamping module 2 to adjust the gas pressure and facilitate the opening and closing of each valve or chamber. It should be noted that the inert gas described in this embodiment refers to a gas with stable chemical properties that does not react or adsorb with the sample to be processed, including but not limited to high-purity nitrogen, helium, etc. In this embodiment, high-purity nitrogen is used as the backfill gas.

[0037] When forming a reference chamber, firstly, the sample to be processed is placed in the degassing module 1 for baking to accelerate the degassing of the sample material to be processed. The first vacuum pump group 11 can maintain a high vacuum degree in the baking chamber 10 to fully degas the interior of the reference chamber. The first valve 5 is opened, and the sample to be tested after baking and degassing is transferred to the clamping module 2 through the conveying module 3. After closing the first valve 5, the second vacuum pump group 22 is opened to keep the main chamber 20 in a vacuum state, and then the clamping mechanism 21 is used to clamp the sample to be processed to form a reference chamber. Such a setting avoids the problems of high temperature and large void rate caused by vacuum welding, and ensures the sealing of the sealing area; at the same time, baking and degassing are used before sealing to accelerate the degassing of the sample material to be processed, thereby improving the vacuum degree inside the reference chamber.

[0038] The baking chamber 10 is provided with a heating mechanism 12 for heating and controlling the temperature of the baking chamber 10, so as to bake the sample to be processed. Specifically, the heating mechanism 12 may be a heating wire, a heating belt, etc. In this embodiment, the heating mechanism 12 is a heating belt wrapped outside the baking chamber 10. In this embodiment, the baking temperature is controlled at 120-300 degrees Celsius to obtain a relatively high vacuum degree at a relatively low operating temperature.

[0039] The degassing module 1 also includes a degassing pre-chamber 13 arranged upstream of the baking chamber 10, the degassing pre-chamber 13 can be controlled to open and close, and is connected to the baking chamber 10 through a second valve 14; the first vacuum pump group 11 is connected to the degassing pre-chamber 13, and is used to evacuate and exhaust the degassing pre-chamber 13; one of the backfill branches of the gas backfill module 4 is connected to the degassing pre-chamber 13, which is the first backfill branch 40, and the first backfill branch 40 is provided with a first stop valve 400. When degassing the sample to be tested, the sample to be tested is placed in the degassing pre-chamber 13, and the first vacuum pump group 11 is started to evacuate. After reaching a certain vacuum value, the first vacuum pump group 11 is closed, and the first stop valve 400 is opened to fill the degassing pre-chamber 13 with inert gas. After the pressure reaches a certain value, for example, when it is close to atmospheric pressure, the first vacuum pump group 11 is opened to evacuate, and the operation is repeated to wash the gas to remove the water vapor on the surface of the sample to be processed and in the degassing pre-chamber 13, thereby reducing the influence of the residual water vapor in the degassing pre-chamber 13 on the baking chamber 10. In addition, by setting the degassing pre-chamber 13, the baking chamber 10 can be isolated from the atmosphere. When the sample to be processed enters the baking chamber 10, the baking chamber 10 does not directly contact the atmosphere, which can effectively reduce the background value of its ultimate vacuum. The first vacuum gauge 130 is provided on the degassing pre-chamber 13 to facilitate monitoring and control of the vacuum degree in the degassing pre-chamber 13.

[0040] Specifically, the first vacuum pump group 11 includes a first dry pump 110 and a cryogenic pump 111; wherein the first dry pump 110 is connected to the degassing pre-chamber 13, and is controlled to be on and off by the second stop valve 112 to adjust the vacuum degree in the degassing pre-chamber 13. The scrubbing operation is completed by opening and closing the first stop valve 400 and the second stop valve 112.

[0041] The cryopump 111 is connected to the baking chamber 10, and is controlled to be on and off by the first control valve 113 to adjust the vacuum degree in the baking chamber 10. Specifically, the first control valve 113 can be a gate valve. The first dry pump 110 is connected to the baking chamber 10 through the first branch 114, and is controlled to be on and off by the third stop valve 115 to assist the cryopump 111 in adjusting the vacuum degree in the baking chamber 10. The first dry pump 110 is connected to the cryopump 111, and is controlled to be on and off by the fourth stop valve 116, so that the first dry pump 110 can also serve as a regeneration pump for the cryopump 111.

[0042] After the gas washing is completed, the first stop valve 400 and the second stop valve 112 are closed, the second valve 14 is opened, the sample to be processed is transferred to the baking chamber 10 under the action of the transfer module 3, the third stop valve 115 is opened, and the pressure in the baking chamber 10 is reduced to a certain value, for example, below 1 Pa, by using the first dry pump 110, the third stop valve 115 is closed, the first control valve 113 is opened, the low temperature pump 111 is used to evacuate the baking chamber 10, and the heating mechanism 12 is turned on for heating and baking. The baking chamber 10 is provided with a second vacuum gauge 101 to facilitate monitoring and control of the vacuum degree in the baking chamber 10.

[0043] In order to facilitate the opening and closing of the second valve 14, one of the backfill branches of the gas backfill module 4 is connected to the baking chamber 10, which is the second backfill branch 41. A fifth stop valve 410 is provided on the second backfill branch 41. By opening and closing the fifth stop valve 410, the pressure difference between the degassing pre-chamber 13 and the baking chamber 10 can be adjusted to allow the second valve 14 to open and close smoothly.

[0044] After the baking and degassing is completed, the first control valve 113 is closed. After the temperature of the baking chamber 10 drops to a certain value, the first valve 5 is opened, and the sample to be processed is transferred to the main chamber 20 under the action of the conveying module 3; similarly, in order to facilitate the opening and closing of the first valve 5, one of the backfill branches of the gas backfill module 4 is connected to the main chamber 20, which is the third backfill branch 42. The third backfill branch 42 is provided with a sixth stop valve 420. By opening and closing the fifth stop valve 410 and the sixth stop valve 420, the pressure difference between the baking chamber 10 and the main chamber 20 can be adjusted to allow the first valve 5 to open and close smoothly.

[0045] After the sample is transported to the predetermined position, the first valve 5 is closed, and the second vacuum pump group 22 is started to perform a vacuum operation to maintain a relatively low vacuum degree in the main chamber 20, and then the sample to be processed is clamped using the clamping mechanism 21. A third vacuum gauge 200 is provided on the main chamber 20 to facilitate monitoring and control of the vacuum degree in the main chamber 20.

[0046] Specifically, the second vacuum pump group 22 includes a second dry pump 220 and a molecular pump 221; the second dry pump 220 is connected to the molecular pump 221, and is controlled to be on and off by the seventh stop valve 222, serving as a front pump of the molecular pump 221; the molecular pump 221 is connected to the main chamber 20, and is controlled to be on and off by the second control valve 223, and is used to draw a high vacuum to the main chamber 20.

[0047] At the same time, the second dry pump 220 is connected to the main chamber 20 through the second branch 224, and is controlled to be on and off by the eighth stop valve 225 to assist the molecular pump 221 in adjusting the vacuum degree in the main chamber 20. When the main chamber 20 is evacuated, the eighth stop valve 225 is first opened, and the pressure in the main chamber 20 is reduced to a certain value, for example, below 1 Pa, by using the second dry pump 220, and then the eighth stop valve 225 is closed, and the second control valve 223 is opened, and the molecular pump 221 evacuates the main chamber 20 to a high vacuum, and after reaching the set pressure, the clamping mechanism 21 is started to clamp the sample to be processed.

[0048] In order to facilitate the discharge, the clamping module 2 also includes a discharge chamber 23 disposed downstream of the main chamber 20, which can be opened and closed, and is connected to the main chamber 20 through a third valve 24; the discharge chamber 23 is connected to the second vacuum pump group 22, so that it can cooperate with the sixth stop valve 420 on the third backfill branch 42 to adjust the pressure difference between the discharge chamber 23 and the main chamber 20, so that the third valve 24 can be opened and closed smoothly. By setting the discharge chamber 23, the main chamber 20 can be isolated from the atmosphere, and the main chamber 20 does not directly contact the atmosphere during the material removal process, which can effectively reduce the background value of its ultimate vacuum.

[0049] Specifically, the discharge chamber 23 is connected to the second dry pump 220, and the on-off is controlled by the ninth stop valve 230. When discharging, the sixth stop valve 420 is opened to backfill the gas into the main chamber 20, so that the pressure in the main chamber 20 increases. At the same time, the ninth stop valve 230 is opened. Under the action of the dry pump, the pressure in the discharge chamber 23 decreases, thereby reducing the pressure difference on both sides of the third valve 24, which facilitates the opening and closing of the third valve 24. A fourth vacuum gauge 231 is provided on the discharge chamber 23 to monitor the pressure in the discharge chamber 23.

[0050] In order to facilitate the removal of finished products from the discharge chamber 23, one of the backfill branches of the gas backfill module 4 is connected to the discharge chamber 23, which is the fourth backfill branch 43, and is controlled by the tenth stop valve 430 to adjust the pressure in the discharge chamber 23. When taking materials, the tenth stop valve 430 is opened to reduce the pressure difference between the discharge chamber 23 and the external pressure, so that the discharge chamber 23 can be opened and closed smoothly. After the material is taken, the discharge chamber 23 is closed, and the ninth stop valve 230 is opened to reduce the pressure in the material taking chamber.

[0051] Specifically, the first valve 5, the second valve 14 and the third valve 24 are all gate valves, and when opening and closing, it is necessary to ensure that the pressure difference on both sides of the valve is less than 100 Pa.

[0052] Specifically, the transmission module 3 can be various existing transmission mechanisms such as slide rail type and push type, and it is only necessary to realize the transmission of samples between various chambers. The transmission mechanism can be either split type, for example, it is separately added in each chamber, or it can adopt an integral slide rail type, connecting each chamber at the same time, and adding a pusher that can slide along the slide rail in the degassing pre-chamber 13, and pushing the sample to be tested into each chamber along the slide rail. In this embodiment, the transmission module 3 adopts an integral slide rail type, so there is no need to set up a transmission mechanism separately in each chamber, which reduces the background vacuum value of each chamber. It should be noted that when using an integral slide rail type transmission mechanism, it is necessary to pay attention to the opening and closing sequence of the first valve 5, the second valve 14 and the third valve 24. For example, when the sample to be processed is transferred from the degassing pre-chamber 13 to the baking chamber 10, the second valve 14 needs to be opened; when it is transported from the baking chamber 10 to the main chamber 20, the second valve 14 and the first valve 5 need to be opened at the same time, and when it is transported to the discharge chamber 23, the second valve 14, the first valve 5 and the third valve 24 need to be opened at the same time.

[0053] The thin film vacuum gauge reference chamber forming method provided by the present invention is described below. The thin film vacuum gauge reference chamber forming method described below and the thin film vacuum gauge reference chamber forming device described above can correspond to each other.

[0054] Reference Figure 2 , a method for forming a thin film vacuum gauge reference chamber, comprising the following steps:

[0055] Pre-degassing: place the sample to be processed into the degassing pre-chamber 13, open the second stop valve 112 to evacuate the air, when the pressure is less than 100 Pa, close the second stop valve 112, open the first stop valve 400 to backfill with high-purity nitrogen, when the pressure is close to atmospheric pressure, open the second stop valve 112 until the pressure is less than 100 Pa, and repeat the above operation for at least three times.

[0056] After pre-degassing is completed, the first stop valve 400 and the second stop valve 112 are closed, and the pressure in the degassing pre-chamber 13 and the baking chamber 10 is adjusted to make the pressure difference less than 100 Pa. The second valve 14 is opened, and the sample to be processed is transferred to the baking chamber 10 using the transfer module 3, and the second valve 14 is closed.

[0057] The third stop valve 115 is opened to evacuate the air. When the pressure in the baking chamber 10 is less than 1 Pa, the third stop valve 115 is closed, the first control valve 113 is opened, and a high vacuum is drawn using the cryogenic pump 111 until the pressure in the baking chamber 10 is 10 -4 -10 -6 Pa, turn on the heating mechanism 12 to heat the baking chamber 10 to a temperature of 120-300 degrees Celsius, and bake and exhaust for 10-72 hours.

[0058] The exhaust is clamped and sealed. When the temperature of the baking chamber 10 is less than 50 degrees Celsius, the first control valve 113 is closed, the pressure of the baking chamber 10 and the main chamber 20 is adjusted to make the pressure difference less than 100 Pa, the first valve 5 is opened, and the conveying mechanism is used to convey the sample to be processed to the main chamber 20, and the first valve 5 is closed.

[0059] The eighth valve is opened to evacuate the main chamber 20 until the pressure is lower than 1 Pa, the eighth valve is closed, the second control valve 223 is opened, and the molecular pump 221 is used to evacuate the main chamber 20 to a high vacuum pressure of 10 -3 -10 -5 Pa, start the clamping mechanism 21 to clamp the copper tube of the sample to be processed to form a reference chamber.

[0060] Discharging, adjust the pressure of the main chamber 20 and the discharging chamber 23 so that the pressure difference is less than 100 Pa, open the third valve 24, use the conveying mechanism to convey the finished product to the discharging chamber 23, close the third valve 24, open the tenth stop valve 430 to backfill the inert gas into the discharging chamber 23 until the pressure in the discharging chamber 23 is close to the atmospheric pressure, open the discharging chamber 23 to take out the finished product, close the discharging chamber 23, and start the ninth valve to vacuum exhaust until the pressure in the discharging chamber 23 is less than 100 Pa.

[0061] Put in new samples to be processed and repeat the above process.

[0062] The innovation of the present invention is that when forming the reference chamber, the sample to be processed is first placed in the degassing module 1 for baking to accelerate the degassing of the sample material to be processed. The first vacuum pump group 11 can maintain a high vacuum degree in the baking chamber 10 to fully degas the interior of the reference chamber; the sample to be tested after baking and degassing is transferred to the clamping module 2 through the conveying module 3, and the main chamber 20 is kept in a high vacuum state through the second vacuum pump group 22, and then the clamping mechanism 21 is used to clamp the sample to be processed to form a reference chamber. This avoids the problems of high temperature and large void rate caused by vacuum welding, and ensures the sealing of the sealing area; at the same time, baking and degassing are used before sealing to accelerate the degassing of the sample material to be processed and improve the vacuum degree inside the reference chamber.

[0063] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A thin film vacuum gauge reference chamber forming device, characterized in that: include: A degassing module (1) comprises a baking chamber (10) which can be heated and controlled to be opened and closed, and a first vacuum pump group (11) for evacuating the baking chamber (10); A clamping module (2) comprises a main chamber (20) which can be controlled to open and close, a clamping mechanism (21) arranged in the main chamber (20), and a second vacuum pump group (22) for evacuating the main chamber (20); the main chamber (20) is arranged downstream of the baking chamber (10) and is connected to the baking chamber (10) via a first valve (5) which can be controlled to open and close; A conveying module (3) is used to convey the sample to be processed between the degassing module (1) and the clamping module (2) in a sealed manner; A gas backfill module (4) having a plurality of backfill branches capable of being controlled to be on and off, and connected to the degassing module (1) and the clamping module (2), and used for backfilling gas into the degassing module (1) and the clamping module (2); The degassing module (1) further comprises a degassing pre-chamber (13) arranged upstream of the baking chamber (10); the degassing pre-chamber (13) is connected to the baking chamber (10) via a second valve (14) that can be opened and closed; one of the backfilling branches of the gas backfilling module (4) is in communication with the degassing pre-chamber (13), which is a first backfilling branch (40); a first stop valve (400) is arranged on the first backfilling branch (40); and a first vacuum pump group (11) is in communication with the degassing pre-chamber (13); The first vacuum pump group (11) comprises a first dry pump (110) and a cryogenic pump (111); the first dry pump (110) is in communication with the cryogenic pump (111), and is controlled to be on and off by a fourth stop valve (116); the cryogenic pump (111) is in communication with the baking chamber (10); the first dry pump (110) is in communication with the degassing pre-chamber (13), and is controlled to be on and off by a second stop valve (112); The first dry pump (110) is connected to the baking chamber (10) via a first branch (114) that can be controlled to open and close, and is controlled to open and close via a third stop valve (115); The clamping module (2) further comprises an openable and closable discharge chamber (23), the discharge chamber (23) being arranged downstream of the main chamber (20) and being connected to the main chamber (20) via a third valve (24); one of the backfilling branches of the gas backfilling module (4) being in communication with the discharge chamber (23), being a fourth backfilling branch (43), and being controlled to be on and off by a tenth stop valve (430); one of the backfilling branches of the gas backfilling module (4) being in communication with the baking chamber (10), being a second backfilling branch (41), and being provided with a fifth stop valve (410); one of the backfilling branches of the gas backfilling module (4) being in communication with the main chamber (20), being a third backfilling branch (42), and being provided with a sixth stop valve (420); the second vacuum pump group (22) being in communication with the discharge chamber (23); The second vacuum pump group (22) includes a second dry pump (220) and a molecular pump (221), the molecular pump (221) is connected to the discharge chamber (23), the second dry pump (220) is connected to the molecular pump (221), and the on-off is controlled by the seventh stop valve (222), and the second dry pump (220) is connected to the discharge chamber (23), and the on-off is controlled by the ninth stop valve (230).

2. The thin film vacuum gauge reference chamber forming device according to claim 1, characterized in that: The second dry pump (220) is connected to the main chamber (20) via a second branch (224) that can be controlled to open and close, and is controlled to open and close via an eighth stop valve (225).

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