A tandem photovoltaic device

Abstract

This application provides a tandem photovoltaic device, relating to the field of solar photovoltaic technology. The tandem photovoltaic device includes a perovskite absorber layer, a crystalline silicon absorber layer, and a single-layer electrical functional layer connecting the two absorber layers in series. The contact interface between the perovskite absorber layer and the single-layer electrical functional layer is a first series interface, and the contact interface between the crystalline silicon absorber layer and the single-layer electrical functional layer is a second series interface. The conductivity type at the second series interface is different from that at the first series interface, and the difference in work function is ≥-0.3eV and ≤0.3eV. Because the difference in work function between the perovskite absorber layer and the crystalline silicon absorber layer at the contact interface is ≥-0.3eV and ≤0.3eV, the work functions of the two absorber layers are matched, avoiding voltage loss caused by work function mismatch. Furthermore, the intermediate series structure does not require a single-layer bandgap, which can reduce parasitic absorption of charge carriers introduced by the multi-layer electrical functional layer and reduce transmission losses introduced by interface resistance and defects.

Description

Technical Field

[0001] This application relates to the field of solar photovoltaic technology, and in particular to a tandem photovoltaic device. Background Technology

[0002] Tandem photovoltaic devices are constructed by stacking wide-bandgap perovskite devices on crystalline silicon devices to form a two-junction stacked structure at both ends. The aim is to break through the theoretical limit of approximately 29.4% for the power conversion efficiency (PCE) of crystalline silicon devices and obtain photovoltaic devices with a PCE exceeding 30%.

[0003] Currently, tandem solar cells often use multiple electrical functional layers to connect the upper and lower cells in series. Although this series connection method achieves functions such as band buffering, carrier transport, and composite series connection, it also causes high parasitic absorption. Furthermore, the multiple interfaces of the superimposed multiple electrical functional layers introduce more interface resistance and defect losses, resulting in current loss. In addition, tandem photovoltaic devices are a series superposition structure of crystalline silicon and perovskite devices. The theoretical voltage value should be the sum of the output voltages of the two devices, but in reality, there is voltage loss, which makes the actual output voltage lower than the theoretical voltage.

[0004] Therefore, reducing the current and voltage losses of tandem photovoltaic devices is the key to further improving their photoelectric conversion efficiency. Summary of the Invention

[0005] This application provides a tandem photovoltaic device, which aims to reduce the current and voltage losses of the tandem photovoltaic device and further improve the photoelectric conversion efficiency of the tandem photovoltaic device.

[0006] In a first aspect, embodiments of this application provide a tandem photovoltaic device, the tandem photovoltaic device comprising a perovskite absorber layer, a crystalline silicon absorber layer, and a single-layer electrical functional layer connecting the perovskite absorber layer and the crystalline silicon absorber layer in series; wherein...

[0007] The conductivity type of the crystalline silicon absorber layer at the second series interface is different from the conductivity type of the perovskite absorber layer at the first series interface;

[0008] The difference between the work function of the crystalline silicon absorber layer at the second series interface and the work function of the perovskite absorber layer at the first series interface is ≥-0.3eV and ≤0.3eV.

[0009] Optionally, the work function of the single-layer electrical functional layer is located between the first work function and the second work function, and includes the range of the first work function and the second work function;

[0010] The first work function is the work function of the perovskite absorption layer at the first serial interface on the perovskite absorption layer;

[0011] The second work function is the work function of the crystalline silicon absorber layer at the second series interface on the crystalline silicon absorber layer.

[0012] Optionally, the conductivity of the single-layer electrical functional layer is greater than or equal to the maximum value of the first conductivity and the second conductivity;

[0013] The first conductivity is the conductivity of the perovskite absorber layer at the first series interface on the perovskite absorber layer.

[0014] The second conductivity is the conductivity of the crystalline silicon absorber layer at the second series interface on the crystalline silicon absorber layer.

[0015] Optionally, the perovskite material used in the perovskite absorber layer has a band gap width of 1.5 eV to 2.3 eV.

[0016] Optionally, the stacked photovoltaic device further includes at least one of a first interface passivation layer and a second interface passivation layer;

[0017] The thickness of the first interface passivation layer is less than or equal to 5 nm, and it is located between the perovskite absorption layer and the single-layer electrical functional layer;

[0018] The thickness of the second interface passivation layer is less than or equal to 5 nm, and it is located between the crystalline silicon absorber layer and the monolayer electrical functional layer.

[0019] Optionally, the stacked photovoltaic device further includes a first functional layer, a second functional layer, a first electrode, and a second electrode;

[0020] The first functional layer is located in the direction away from the monolayer electrical functional layer of the perovskite absorber layer, and the first electrode is at least partially disposed in the first functional layer;

[0021] The second functional layer is located in the direction away from the monolayer electrical functional layer of the crystalline silicon absorber layer, and the second electrode is at least partially disposed in the second functional layer.

[0022] Optionally, the conductivity type at the second series interface on the crystalline silicon absorber layer is P-type, and the first series interface on the perovskite absorber layer uses N-type perovskite material, wherein the N-type perovskite material includes MAPbBr3 and MAPb. 0.91 I 2.82 At least one of MAPbI3, FAPbI3, MASnI3, MANH3PbI3, MASnBr3, FASnI3, and CsSnBr3.

[0023] Optionally, an N-type dopant is further used at the first tandem interface on the perovskite absorber layer, wherein the N-type dopant includes at least one of indium, antimony, vanadium, and bismuth.

[0024] Optionally, the material used in the single-layer electrical functional layer includes any one or any one of fluorine-doped tin oxide, nickel oxide, copper oxide, molybdenum oxide, and 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene;

[0025] The doped material is obtained by doping with any one of the following elements: alkali metal, alkaline earth metal, transition metal, or halogen metal.

[0026] Optionally, the conductivity type at the second series interface on the crystalline silicon absorber layer is N-type, and the first series interface on the perovskite absorber layer uses P-type perovskite material, wherein the P-type perovskite material includes MAPbBr3 and MAPb. 0.91 I 2.82 At least one of MAPbI3, FAPbI3, MASnI3, MANH3PbI3, MASnBr3, FASnI3, and CsSnBr3.

[0027] Optionally, a P-type dopant is further used at the first tandem interface on the perovskite absorber layer, wherein the P-type dopant includes at least one of sodium, potassium, copper, and oxygen.

[0028] Optionally, the material used in the single-layer electrical functional layer includes any one or any one of zinc oxide, tin oxide, titanium oxide, fullerene carbon as a doped material;

[0029] The doped material is obtained by doping with any one of the following elements: alkali metal, alkaline earth metal, transition metal, or halogen metal.

[0030] The tandem photovoltaic device provided in this embodiment includes a perovskite absorber layer, a crystalline silicon absorber layer, and a single-layer electrical functional layer connecting the perovskite absorber layer and the crystalline silicon absorber layer in series. The contact interface between the perovskite absorber layer and the single-layer electrical functional layer is a first series interface, and the contact interface between the crystalline silicon absorber layer and the single-layer electrical functional layer is a second series interface. The conductivity type of the crystalline silicon absorber layer at the second series interface is different from the conductivity type of the perovskite absorber layer at the first series interface. The difference between the work function of the crystalline silicon absorber layer at the second series interface and the work function of the perovskite absorber layer at the first series interface is ≥-0.3eV and ≤0.3eV. The tandem photovoltaic device provided in this application has a work function difference of ≥-0.3eV and ≤0.3eV between the perovskite absorber layer and the crystalline silicon absorber layer at the contact interface. Therefore, the work function of the perovskite absorber layer and the crystalline silicon absorber layer can be matched, avoiding voltage loss caused by work function mismatch. Moreover, based on the matched work function, the band structure of the perovskite absorber layer and the crystalline silicon absorber layer is matched, eliminating the need for energy level buffering. A single-layer electrical functional layer can be used to connect the two absorber layers in series, reducing parasitic absorption in multi-layer series connection, reducing resistance and interface loss introduced by the interface between multi-layers, and reducing current and voltage losses. This improves the output voltage of the tandem photovoltaic device and further enhances the photoelectric conversion efficiency of the tandem photovoltaic device. Attached Figure Description

[0031] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments of this application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0032] Figure 1 This paper shows a schematic diagram of the structure of a multilayer photovoltaic device provided in an embodiment of this application;

[0033] Figure 2 This paper illustrates the work function values ​​and band gap ranges of crystalline silicon and some perovskite materials provided in an embodiment of this application.

[0034] Figure 3a This invention provides a schematic diagram of the band structure matching of a P-type crystalline silicon absorber layer connected in series with an N-type perovskite absorber layer.

[0035] Figure 3b This illustration shows a schematic diagram of the band structure matching of another P-type crystalline silicon absorber layer connected in series with an N-type perovskite absorber layer provided in an embodiment of this application.

[0036] Figure 3cThis illustration shows a schematic diagram of the band structure matching of an N-type crystalline silicon absorber layer connected in series with a P-type perovskite absorber layer according to an embodiment of this application.

[0037] Figure 3d This invention provides a schematic diagram of the band structure matching of another N-type crystalline silicon absorber layer connected in series with a P-type perovskite absorber layer.

[0038] Figure 4 This paper shows a schematic diagram of another tandem photovoltaic device provided in an embodiment of this application;

[0039] Figure 5 A schematic diagram of another tandem photovoltaic device provided in this application embodiment is shown. Detailed Implementation

[0040] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0041] Figure 1 This paper shows a schematic diagram of the structure of a tandem photovoltaic device according to an embodiment of this application. (Refer to...) Figure 1 The tandem photovoltaic device includes a perovskite absorber layer 12, a crystalline silicon absorber layer 13, and a single-layer electrical functional layer 11 connecting the perovskite absorber layer 12 and the crystalline silicon absorber layer 13 in series. The first series interface 121 on the perovskite absorber layer 12 is a first series interface 121, and the second series interface 131 on the crystalline silicon absorber layer 13 is a second series interface 131.

[0042] The conductivity type of the crystalline silicon absorber layer 13 at the second series interface 131 is different from the conductivity type of the perovskite absorber layer 12 at the first series interface 121.

[0043] The difference between the work function of the crystalline silicon absorber layer 13 at the second series interface 131 and the work function of the perovskite absorber layer 12 at the first series interface 121 is ≥-0.3eV and ≤0.3eV.

[0044] In this embodiment, the crystalline silicon absorber layer 13 and the perovskite absorber layer 12 are connected in series via a single-layer electrical functional layer 11. The interface between the perovskite absorber layer 12 and the single-layer electrical functional layer 11 is the first series interface 121, and the interface between the crystalline silicon absorber layer 13 and the single-layer electrical functional layer 11 is the second series interface 131. Research on tandem photovoltaic devices has revealed that the energy level pE at the perovskite absorber layer 12 at the first series interface 121... c p-qusi-E is produced by splitting under light conditions. e Perovskite absorber layer quasi-Fermi level, p-qusi-E h The perovskite absorber layer hole quasi-Fermi level, the energy level sE at the second tandem interface at 131 in the crystalline silicon absorber layer at 13. v Under illumination, s-qusi-E is produced through splitting. e The quasi-Fermi level of the crystalline silicon absorber layer, s-qusi-E h The quasi-Fermi level of holes in the crystalline silicon absorber layer, under the same material and illumination conditions, is p-qusi-E. e and p-qusi-E h The difference between p-FS (Fermi Level Split) and s-qusi-E e and s-qusi-E h The difference s-FS is a constant. At this point, the energy level difference ΔE of the tandem photovoltaic device is (pE... c )-(sE v If ), then the open-circuit voltage Voc = (s - qusi - E) e )-(p-qusi-E h The equation is: Voc = (p-FS) + (s-FS) - ΔQsi-E ≈ (p-FS) + (s-FS) - ΔE. Since p-FS and s-FS are fixed values, the magnitude of Voc is closely related to ΔE; the smaller ΔE is, the larger Voc is. Furthermore, when the work function of the perovskite absorber layer 12 at the first series interface 121 is mismatched with the work function of the crystalline silicon absorber layer 13 at the second series interface 131, ΔE is larger, resulting in a smaller Voc. This means that work function mismatch in the tandem photovoltaic device leads to voltage loss. Simultaneously, a larger ΔE due to work function mismatch creates an interface barrier, requiring the introduction of multiple electrical functional layers to buffer carrier energy levels and reduce the interface barrier. This increases the thickness of the series structure, affecting the resistivity and transmittance of the intermediate series structure, causing parasitic absorption, and further leading to current and voltage losses.

[0045] In this embodiment of the invention, in order to avoid mismatch in the work functions of the two absorption layers, the work functions of the first series interface 121 and the second series interface 131 can be adjusted. Optionally, since the band structure of the crystalline silicon absorber layer 13 is relatively fixed, the work function of P-type crystalline silicon is 5.03eV to 5.10eV, and the work function of N-type crystalline silicon is 4.42eV to 4.63eV. Therefore, the work function of the crystalline silicon material can be used as a reference. By adjusting the work function at the first series interface 121 on the perovskite absorber layer 12, the difference between the work function of the crystalline silicon absorber layer 13 at the second series interface 131 and the work function of the perovskite absorber layer 12 at the first series interface 121 is ≥-0.3eV and ≤0.3eV. This achieves work function matching and band structure matching. In this way, a single-layer electrical functional layer 11 can be used to connect the crystalline silicon absorber layer 13 and the perovskite absorber layer 12 in series, and the work function mismatch can be avoided, which would lead to an excessively large ΔE, a small open-circuit voltage, and voltage loss.

[0046] Figure 2 This paper illustrates a schematic diagram showing the work function values ​​and band gap ranges of crystalline silicon and some perovskite materials according to embodiments of this application. Figure 2 As shown, the vertical axis represents energy values ​​in eV, and the horizontal axis represents material type. The bars corresponding to each material type represent the bandgap range. The values ​​for P-type and N-type crystalline silicon represent the work function. The work function of P-type crystalline silicon is approximately 5.03 eV, and that of N-type crystalline silicon is approximately 4.45 eV. The values ​​for other perovskite materials represent the conduction band and valence band edges, respectively. The work function of perovskite materials is typically within the bandgap and can be relatively easily adjusted. Figure 2 As shown, the maximum adjustable range of the work function of some perovskite materials is 4.74 eV to 6.24 eV for FAPbI3, 4.36 eV to 5.93 eV for MAPbCl3, 4.47 eV to 6.25 eV for CsPbI3, and 4.07 eV to 5.82 eV for CsSnBr3. It can be seen that the work function of crystalline silicon is relatively fixed, while the work function of perovskite materials can be adjusted within a certain range. Using the work function of crystalline silicon as a reference, the work function of perovskite materials can be adjusted to achieve work function matching between the crystalline silicon absorber layer and the perovskite absorber layer. Figure 2 The work functions shown are data when each material exists independently. Since the work functions of each material may change due to contact in a multilayer structure, and the work functions of multilayer materials are not easily measured accurately, only the work function values ​​when each material exists independently are considered here. Figure 2 The types of perovskite materials used are merely examples and do not limit the choice of materials for the perovskite absorber layer in the embodiments of this application.

[0047] Since the perovskite absorber layer 12 may exhibit different conductivity types and work functions due to variations in dopant concentration and type, and the crystalline silicon absorber layer 13 may exhibit different conductivity types due to variations in silicon wafer type, dopant type, and dopant location, the conductivity type and work function at the first series interface 121 between the perovskite absorber layer 12 and the monolayer electrical functional layer 11, as well as the conductivity type at the second series interface 131 between the crystalline silicon absorber layer 13 and the monolayer electrical functional layer 11, can be controlled. When adjusting the work function at the first series interface 121 of the perovskite absorber layer 12, within the range of work functions achievable by different perovskite materials, such as when the conductivity type at the second series interface 131 on the crystalline silicon absorber layer 13 is P-type and the work function is 5.03 eV, the work function at the first series interface 121 of the perovskite absorber layer 12 can be adjusted to 5.03 ± 0.3 eV so that the difference in work function is ≥ -0.3 eV and ≤ 0.3 eV; when the conductivity type at the second series interface 131 on the crystalline silicon absorber layer 13 is P-type... The work function of the N-type perovskite absorber layer is 4.45 eV. At this time, the work function of the perovskite absorber layer 12 at the first series interface 121 can be adjusted to 4.45 ± 0.3 eV so that the difference in work function is ≥ -0.3 eV and ≤ 0.3 eV. The above work function values ​​are only for example. Within the allowable range, those skilled in the art can select the specific work function of the crystalline silicon absorber layer 13 and the perovskite absorber layer 12 at the contact interface according to their needs. The perovskite absorber layer does not include the bipolar perovskite absorber layer with the Fermi level located in the middle of the band gap.

[0048] Figure 3a This diagram illustrates the band structure matching of a P-type crystalline silicon absorber layer connected in series with an N-type perovskite absorber layer, as provided in this application. Figure 3b This illustration shows a schematic diagram of the band structure matching of another P-type crystalline silicon absorber layer connected in series with an N-type perovskite absorber layer, provided in an embodiment of this application. Figure 3c This diagram illustrates the band structure matching of an N-type crystalline silicon absorber layer connected in series with a P-type perovskite absorber layer, as provided in this application. Figure 3d This illustration shows a schematic diagram of the band structure matching of another N-type crystalline silicon absorber layer connected in series with a P-type perovskite absorber layer provided in this application. The vacuum energy level is 0, and the positions of each energy level are shown below. The band structure includes a single-layer electrical functional layer 11, a perovskite absorber layer 12, and a crystalline silicon absorber layer 13, as follows. Figure 3a , 3c The band structure shown in the diagram, wherein the monolayer electrical functional layer 11 acts as a series layer through a tunneling recombination mechanism at the interface with the crystalline silicon absorber layer 13; in the band structures shown in 3b and 3d, tunneling recombination occurs at the interface between the monolayer electrical functional layer 11 and the perovskite absorber layer 12. Since the conductivity of the crystalline silicon absorber layer 13 is typically higher than that of the perovskite absorber layer 12, therefore, as... Figure 3b ,3d In the band structure shown, the output performance may be limited by the carrier mobility within the perovskite material. Figure 3a , 3b In 3c and 3d, since the band structure is matched between the crystalline silicon absorber layer 13 and the perovskite absorber layer 12, the series connection can be achieved through a single-layer electrical functional layer 1.

[0049] Optionally, the work function of the single-layer electrical functional layer 11 is located between the first work function and the second work function, and includes the range of the first work function and the second work function;

[0050] The first work function is the work function of the perovskite absorption layer 12 at the first serial interface 121 on the perovskite absorption layer 12;

[0051] The second work function is the work function of the crystalline silicon absorption layer 13 at the second series interface 131 on the crystalline silicon absorption layer 13.

[0052] In this embodiment, the single-layer electrical functional layer 11 acts as a series layer between the perovskite absorber layer 12 and the crystalline silicon absorber layer 13. Therefore, the single-layer electrical functional layer 11 can be made of a material whose work function is between the first work function and the second work function, and includes the range of the first work function and the second work function. The first work function is the work function at the first series interface 121 on the perovskite absorber layer 12, and the second work function is the work function at the second series interface 131 on the crystalline silicon absorber layer 13. Specifically, when the first work function is 5.03 eV and the second work function is 5.03 ± 0.3 eV, if the specific value of the second work function is greater than that of the first work function, the upper limit of the work function of the single-layer electrical functional layer 11 is the specific value of the second work function, and the lower limit is 5.03 eV. If the specific value of the second work function is less than that of the first work function, the upper limit of the work function of the single-layer electrical functional layer 11 is 5.03 eV, and the lower limit is the specific value of the second work function. The case where the first work function is 4.45 eV and the second work function is 4.45 ± 0.3 eV can be referred to the above explanation. The value range of the work function of the single-layer electrical functional layer 11 includes the endpoint values.

[0053] Optionally, the conductivity of the single-layer electrical functional layer 11 is greater than or equal to the maximum value of the first conductivity and the second conductivity;

[0054] The first conductivity is the conductivity of the perovskite absorber layer 12 at the first series interface 121 on the perovskite absorber layer 12;

[0055] The second conductivity is the conductivity of the crystalline silicon absorber layer 13 at the second series interface 131 on the crystalline silicon absorber layer 13.

[0056] In this embodiment, the conductivity of the monolayer electrical functional layer 11 can be greater than or equal to the maximum value of the first conductivity at the contact interface with the crystalline silicon absorber layer 13 and the second conductivity at the contact interface with the perovskite absorber layer 12. Optionally, the conductivity can be determined based on the type and composition of the material at the contact interface and compared with the first and second conductivity to determine that the conductivity of the monolayer electrical functional layer 11 is greater than or equal to the maximum value of the first and second conductivity. In practical applications, since the conductivity of crystalline silicon materials is usually higher than that of perovskite materials, therefore, as mentioned above... Figure 3b , 3d The single-layer electrical functional layer 11 can avoid affecting the contact and transport capacity of the perovskite absorber layer 12 carriers, and achieves series connection through the tunneling recombination mechanism at the contact interface with the crystalline silicon absorber layer 13.

[0057] Optionally, the crystalline silicon absorption layer 13 is made of crystalline silicon material that has light absorption properties and can separate and collect photogenerated carriers.

[0058] In this embodiment, the crystalline silicon absorber layer 13 can serve as the lower cell absorber layer of a tandem photovoltaic device. The crystalline silicon absorber layer 13 may or may not include a PN junction, and its upper and lower surfaces may be planar structures or have light-trapping structures, etc. Optionally, the crystalline silicon absorber layer 13 can be made of crystalline silicon material that has light absorption properties and whose photogenerated carriers can be separated and collected, such as crystalline silicon material that is locally and comprehensively doped on the surface of a silicon wafer. This material can play a role in light absorption and provide separable photogenerated carriers, contributing to the photoelectric conversion efficiency of the tandem photovoltaic device. On the other hand, microcrystalline silicon or nanocrystalline silicon layers on passivation layers such as amorphous silicon and TOPCon (tunnel oxide passivated contact) cells can absorb incident light, but the generated photogenerated carriers cannot be separated and collected. Therefore, they are not used as materials for the single-layer electrical functional layer 11.

[0059] Optionally, the perovskite absorber layer 12 uses a perovskite material with a band gap width of 1.5 eV to 2.3 eV.

[0060] In this embodiment, the perovskite absorber layer 12 can serve as the upper cell absorber layer of a tandem photovoltaic device. The perovskite absorber layer 12 can be made of a wide bandgap perovskite material with a bandgap width of 1.5 eV to 2.3 eV. It can be a single-component perovskite material or a mixed-component perovskite material. The perovskite material in the perovskite absorber layer 12 can be a uniform component or a non-uniform component, as long as the work function at the first series interface 121 on the perovskite absorber layer 12 meets the aforementioned limitation. In this embodiment, the composition of the perovskite absorber layer 12 at the contact interface with the single-layer electrical functional layer 11 is not specifically limited.

[0061] Optionally, the conductivity type at the second series interface 131 on the crystalline silicon absorber layer 13 is P-type, and the first series interface 121 on the perovskite absorber layer 12 uses N-type perovskite material, wherein the N-type perovskite material includes MAPbBr3 and MAPb. 0.91 I 2.82 At least one of MAPbI3, FAPbI3, MASnI3, MANH3PbI3, MASnBr3, FASnI3, and CsSnBr3.

[0062] In this embodiment, the conductivity type at the second series interface 131 on the crystalline silicon absorber layer 13 and the conductivity type and work function at the first series interface 121 on the perovskite absorber layer 12 are controlled. The conductivity type and work function at other locations on the crystalline silicon absorber layer 13 and the perovskite absorber layer 12 are not limited. For example, when the conductivity type at the second series interface 131 is P-type, the conductivity type at other locations on the crystalline silicon absorber layer 13 can be P-type or N-type, such as N-type doping at the second series interface 131 of a P-type silicon wafer. Similarly, when the conductivity type at the first series interface 121 is P-type, the conductivity type at other locations on the perovskite absorber layer 12 can be P-type or N-type. This embodiment does not impose specific limitations on this.

[0063] In this embodiment, when the conductivity type at the second series interface 131 is P-type, FAPbI3 or MAPb can be used at the first series interface 121. 1.1 I 3.2 MAPb 1.5 Br4, MASnI3, MAPbBr 1.5 Cl 1.5 MAPbCl3, MAPbI3, MAPbI 2.1 Cl 0.9The perovskite material is a single component or a mixture of two or more components such as FASnI3 and CsSnI3. By adjusting the types and proportions of various atoms in the perovskite material, the first series interface 121 of the perovskite absorber layer 12 is N-type, and the difference between the work function of the perovskite absorber layer 12 and the work function of the crystalline silicon absorber layer 13 at the second series interface 131 is ≥-0.3eV and ≤0.3eV.

[0064] Optionally, an N-type dopant is also used at the first tandem interface 121 on the perovskite absorber layer 12, wherein the N-type dopant includes at least one of indium, antimony, vanadium, and bismuth.

[0065] In this embodiment, an N-type dopant may also be used at the first series interface 121 to better control the first series interface 121 to be N-type when it is P-type at the second series interface 131. The N-type dopant may be at least one of indium, antimony, vanadium, and bismuth.

[0066] The materials used in the single-layer electrical functional layer 11 include any one or any one of the following: tin oxide, nickel oxide, copper oxide, molybdenum oxide, 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, cuprous oxide, tungsten oxide, vanadium oxide, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], cuprous thiocyanate, poly(3,4-ethylenedioxythiophene), and poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid.

[0067] The doped material is obtained by doping with any one of the following elements: alkali metal, alkaline earth metal, transition metal, or halogen metal.

[0068] In this embodiment, based on the requirements of parameters such as work function and conductivity, when the second series interface 131 of the crystalline silicon absorber layer 13 is P-type and the first series interface 121 of the perovskite absorber layer 12 is N-type, the materials that can be used for the single-layer electrical functional layer 11 include tin oxide, nickel oxide, copper oxide, molybdenum oxide, 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene (Spiro-OMeTAD), cuprous oxide, tungsten oxide, vanadium oxide, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), cuprous thiocyanate, poly(3,4-ethylenedioxythiophene) (PEDOT), and poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid (PEDOT:PSS). The doped material can be any one of the following: tin oxide, nickel oxide, copper oxide, molybdenum oxide, 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, cuprous oxide, tungsten oxide, vanadium oxide, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], cuprous thiocyanate, poly(3,4-ethylenedioxythiophene), and poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid. Optionally, the doped material can be any one of alkali metal elements, alkaline earth metal elements, transition metal elements, and halogen metal elements, such as sodium, calcium, indium, gallium, and fluorine. The work functions of the above materials are similar, and those skilled in the art can select different types of materials according to process conditions and application requirements. This application does not impose specific limitations on this.

[0069] Optionally, the conductivity type at the second series interface 131 on the crystalline silicon absorber layer 13 is N-type, and the first series interface 121 on the perovskite absorber layer 12 uses a P-type perovskite material, wherein the P-type perovskite material includes MAPbBr3 and MAPb. 0.91 I 2.82 At least one of MAPbI3, FAPbI3, MASnI3, MANH3PbI3, MASnBr3, FASnI3, and CsSnBr3.

[0070] In this embodiment, when the conductivity type at the second series interface 131 is N-type, MAPbBr3 or MAPb can be used at the first series interface 121. 0.91 I 2.82The perovskite materials include MAPbI3, FAPbI3, MASnI3, MANH3PbI3, MASnBr3, FASnI3, CsSnBr3, etc., which are single components or mixed components of two or more. By adjusting the types and proportions of various atoms in the perovskite material, the first series interface 121 of the perovskite absorber layer 12 is P-type, and the difference between the work function of the perovskite absorber layer 12 and the work function of the crystalline silicon absorber layer 13 at the second series interface 131 is ≥-0.3eV and ≤0.3eV.

[0071] Optionally, a P-type dopant is also used at the first tandem interface 121 on the perovskite absorber layer 12, wherein the P-type dopant includes at least one of sodium, potassium, copper, and oxygen.

[0072] In this embodiment, a P-type dopant may also be used at the first series interface 121 to better control the first series interface 121 to be P-type when it is N-type at the second series interface 131. The P-type dopant may be at least one of sodium, potassium, copper, and oxygen.

[0073] Optionally, the material used for the single-layer electrical functional layer 11 includes any one or any one of zinc oxide, indium oxide, tin oxide, titanium oxide, molybdenum sulfide, niobium oxide, tantalum oxide, cadmium sulfide, and fullerene carbon as doped materials.

[0074] The doped material is obtained by doping with any one of the following elements: alkali metal, alkaline earth metal, transition metal, or halogen metal.

[0075] In this embodiment, when the second series interface 131 of the crystalline silicon absorber layer 13 is N-type and the first series interface 121 of the perovskite absorber layer 12 is P-type, the single-layer electrical functional layer 11 can be made of any one or any one of zinc oxide, indium oxide, tin oxide, titanium oxide, molybdenum sulfide, niobium oxide, tantalum oxide, cadmium sulfide, and fullerene carbon. "Any one" refers to a material obtained by doping any one of zinc oxide, indium oxide, tin oxide, titanium oxide, molybdenum sulfide, niobium oxide, tantalum oxide, cadmium sulfide, and fullerene carbon with other elements. Optionally, the doping material can be any one of alkali metal elements, alkaline earth metal elements, transition metal elements, and halogen metal elements, such as sodium, calcium, indium, gallium, and fluorine. The work functions of the above materials are similar, and those skilled in the art can select different types of materials according to process conditions and application requirements. This embodiment does not impose specific limitations on this.

[0076] Optionally, the stacked photovoltaic device further includes a first functional layer 14, a second functional layer 15, a first electrode 16, and a second electrode 17;

[0077] The first functional layer 14 is located in the direction away from the single-layer electrical functional layer 11 of the perovskite absorber layer 12, and the first electrode 16 is at least partially disposed in the first functional layer 14.

[0078] In this embodiment, the first functional layer 14 can serve as the upper functional layer on the surface of the perovskite absorber layer 12, located in the direction away from the single-layer electrical functional layer 11 of the perovskite absorber layer 12. The first functional layer 14 is a multilayer structure and can have at least one function such as interface passivation, selective contact and transmission, and upper surface anti-reflection. The first electrode 16 can serve as the upper electrode on the surface of the perovskite absorber layer 12. The first electrode 16 can be made of metals or alloys such as aluminum, copper, and silver. Optionally, the first electrode 16 can be at least partially inserted into the first functional layer 14. For example, the first electrode 16 can be partially embedded in the first functional layer 14 or can penetrate the first functional layer 14 to extract charge carriers and achieve external output.

[0079] The second functional layer 15 is located in the direction away from the monolayer electrical functional layer 11 of the crystalline silicon absorber layer 13, and the second electrode 17 is at least partially disposed in the second functional layer 15.

[0080] In this embodiment, the second functional layer 15 can serve as the lower functional layer on the surface of the crystalline silicon absorber layer 13, located in the direction away from the single-layer electrical functional layer 11 of the crystalline silicon absorber layer 13. The second functional layer 15 is a multilayer structure and can have at least one function such as interface passivation, selective contact and transmission, and lower surface anti-reflection. The second electrode 17 can serve as the lower electrode on the surface of the crystalline silicon absorber layer 13. The second electrode 17 can be made of metals or alloys such as aluminum, copper, and silver. Optionally, the second electrode 17 can be at least partially inserted into the second functional layer 15. For example, the second electrode 17 can be partially embedded in the second functional layer 15 or can penetrate the second functional layer 15 to extract charge carriers and achieve external output.

[0081] Optionally, the stacked photovoltaic device further includes at least one of a first interface passivation layer and a second interface passivation layer;

[0082] The thickness of the first interface passivation layer is less than or equal to 5 nm, and it is located between the perovskite absorption layer 12 and the single-layer electrical functional layer 11.

[0083] The thickness of the second interface passivation layer is less than or equal to 5 nm, and it is located between the crystalline silicon absorber layer 13 and the single-layer electrical functional layer 11.

[0084] In this embodiment, a first interface passivation layer may be provided between the perovskite absorber layer 12 and the single-layer electrical functional layer 11, and / or a second interface passivation layer may be provided between the crystalline silicon absorber layer 13 and the single-layer electrical functional layer 11. The first interface passivation layer and the second interface passivation layer may be made of dielectric materials and have a thickness of less than or equal to 5 nm to avoid excessive thickness affecting the electrical function.

[0085] The tandem photovoltaic device provided in this embodiment includes a perovskite absorber layer, a crystalline silicon absorber layer, and a single-layer electrical functional layer connecting the perovskite absorber layer and the crystalline silicon absorber layer in series. The contact interface between the perovskite absorber layer and the single-layer electrical functional layer is a first series interface, and the contact interface between the crystalline silicon absorber layer and the single-layer electrical functional layer is a second series interface. The conductivity type of the crystalline silicon absorber layer at the second series interface is different from the conductivity type of the perovskite absorber layer at the first series interface. The difference between the work function of the crystalline silicon absorber layer at the second series interface and the work function of the perovskite absorber layer at the first series interface is ≥-0.3eV and ≤0.3eV. The tandem photovoltaic device provided in this application has a work function difference of ≥-0.3eV and ≤0.3eV between the perovskite absorber layer and the crystalline silicon absorber layer at the contact interface. Therefore, the work function of the perovskite absorber layer and the crystalline silicon absorber layer can be matched, avoiding voltage loss caused by work function mismatch. Moreover, based on the matched work function, the band structure of the perovskite absorber layer and the crystalline silicon absorber layer is matched, eliminating the need for energy level buffering. A single-layer electrical functional layer can be used to connect the two absorber layers in series, reducing parasitic absorption in multi-layer series connection, reducing resistance and interface loss introduced by the interface between multi-layers, and reducing current and voltage losses. This improves the output voltage of the tandem photovoltaic device and further enhances the photoelectric conversion efficiency of the tandem photovoltaic device.

[0086] Example 1

[0087] like Figure 1 As shown, this application provides a specific example of a tandem photovoltaic device, including:

[0088] The first series interface 121 of the perovskite absorber layer 12 is prepared using FAPbI3 single-component perovskite material, with a thickness of 300 nm to 500 nm. During the deposition process, an excess of PbI2 component is used to make the first series interface 121 on the perovskite absorber layer 12 N-type; at this time, the electrical conductivity of the perovskite absorber layer 12 is 10. -7 S·cm -1 The magnitude is far lower than that of crystalline silicon.

[0089] A first functional layer 14 is disposed on the perovskite absorption layer 12. The first functional layer 14 serves as an interface passivation layer, a hole selective contact and transport layer, and an upper surface anti-reflection layer. The first functional layer 14 is a multilayer structure, using a 2nm thick calcium fluoride or lithium fluoride material as an interface passivation layer, a 50nm thick nickel oxide and a 100nm thick tin oxide material stack as a hole selective contact and transport layer, and magnesium fluoride as an upper surface anti-reflection film.

[0090] The crystalline silicon absorber layer 13 is made of a P-type silicon wafer. A full-layer P-type heavily doped layer is formed at the second series interface 131 on the upper surface of the P-type silicon wafer by diffusion or ion implantation. The doping concentration at the second series interface 131 is 5 × 10⁻⁶. 18 cm -3 The corresponding resistivity is 4×10 -2 Ω·cm, corresponding to a conductivity (the reciprocal of resistivity) of 25 S·cm. -1 Furthermore, the upper and lower surfaces are planar structures.

[0091] A second functional layer 15 is disposed on the lower surface of the crystalline silicon absorber layer 13. The second functional layer 15 adopts a passivated contact structure, which serves the functions of interface passivation, selective electron contact and transport, and anti-reflection of the lower surface. The second functional layer 15 is a multilayer structure, consisting of a 2nm thick silicon oxide layer, a 30nm thick N-type polycrystalline silicon layer, a 100nm thick indium-doped tin oxide layer, and an 80nm thick silicon nitride thin film stack.

[0092] A single-layer electrical functional layer 11 is disposed between the perovskite absorber layer 12 and the crystalline silicon absorber layer 13. The single-layer electrical functional layer 11 is a 30 nm thick indium tin oxide layer; the conductivity of indium tin oxide can be as high as 10. 4 S·cm -1 Lightly doped indium oxide is used here, with a small amount of tin oxide doping, less than 1 wt%.

[0093] A single-layer electrical functional layer 11 and a crystalline silicon absorber layer 13 are provided with an interface silicon oxide with a thickness of no more than 2 nm, which serves to passivate the surface of the crystalline silicon.

[0094] The upper surface of the first functional layer 14 is provided with a corresponding first electrode 16, and the lower surface of the second functional layer 15 is provided with a corresponding second electrode 17. The first electrode 16 and the second electrode 17 can be made of metals or alloys such as aluminum, copper, and silver, and are at least partially disposed in the functional layers they contact, so as to achieve external output.

[0095] Example 2

[0096] Figure 4 This application provides a schematic diagram of another tandem photovoltaic device, as shown in the embodiment. Figure 4As shown, another specific example of a tandem photovoltaic device includes:

[0097] The single-layer electrical functional layer 21, the perovskite absorption layer 22, the crystalline silicon absorption layer 23, the first functional layer 24, the second functional layer 25, the first electrode 26, the second electrode 27, the first interface passivation layer 28, and the second interface passivation layer 29.

[0098] The first series interface 221 of the perovskite absorber layer 22 is prepared using MAPbI3 single-component perovskite material, with a thickness of 300 nm to 500 nm. During the deposition process, an excess of PbI2 component is used to make the first series interface 221 of the perovskite absorber layer 22 N-type. The resistivity of MAPbI3 is 4 Ω·cm, and the conductivity is 0.25 S·cm. -1 .

[0099] A first functional layer 24 is disposed on the perovskite absorption layer 22. The first functional layer 24 serves the functions of interface passivation, hole selective contact and transport, and upper surface anti-reflection. The first functional layer 24 is a multilayer structure, using 2nm thick calcium fluoride material as the interface passivation layer, using a stack of 50nm thick Spiro-OMeTAD and 100nm thick tin oxide material as the hole selective contact and transport layer, and using magnesium fluoride as the upper surface anti-reflection film.

[0100] The crystalline silicon absorber layer 23 is made of an N-type silicon wafer. A P-type diffusion region is formed at the first series interface 231 on the upper surface of the N-type silicon wafer through thermal diffusion, and both the upper and lower surfaces have a textured structure. The doping concentration at the first series interface 121 is 1×10⁻⁶. 19 cm -3 Electrical conductivity 60 S·cm -1 .

[0101] A second functional layer 25 is disposed on the lower surface of the crystalline silicon absorber layer 23. The second functional layer 25 adopts a heterojunction structure and plays the functions of interface passivation, selective electron contact and transport, and anti-reflection of the lower surface. The second functional layer 25 is a multilayer structure, consisting of an intrinsic amorphous silicon with a thickness of 5 nm, an N-type amorphous silicon with a thickness of 20 nm, an indium tin oxide layer with a thickness of 100 nm, and an 80 nm thick silicon nitride thin film stack.

[0102] A monolayer electrical functional layer 21 is disposed between the perovskite absorber layer 22 and the crystalline silicon absorber layer 23. The monolayer electrical functional layer 21 is made of aluminum-doped zinc oxide material and has a thickness of 20 nm. The conductivity of the aluminum-doped zinc oxide layer is typically 100 S·cm. -1

[0103] A first interface passivation layer 28 is provided between the perovskite absorber layer 22 and the single-layer electrical functional layer 21. It is made of lithium fluoride material and has a thickness of 1 nm.

[0104] A second interface passivation layer 29 is provided between the crystalline silicon absorber layer 23 and the single-layer electrical functional layer 21. A 2nm thick silicon oxide layer is used to achieve surface passivation of the crystalline silicon.

[0105] The upper surface of the first functional layer 24 is provided with a corresponding first electrode 26, and the lower surface of the second functional layer 25 is provided with a corresponding second electrode 27. The first electrode 26 and the second electrode 27 can be made of metals or alloys such as aluminum, copper, and silver, and are at least partially disposed in the functional layers they contact, so as to achieve external output.

[0106] Example 3

[0107] Figure 5 This application provides a schematic diagram of the structure of another type of tandem photovoltaic device, as shown in the embodiment. Figure 5 As shown, another specific example of a tandem photovoltaic device includes:

[0108] Single-layer electrical functional layer 31, perovskite absorber layer 32, crystalline silicon absorber layer 33, first functional layer 34, second functional layer 35, first electrode 36, second electrode 37;

[0109] The first series interface 321 of the perovskite absorber layer 32 is prepared using a blend of MASnBr3 and FASnI3 perovskite material, with a thickness of 300 nm to 500 nm. During the deposition process, excess MAI and FAI components are used to make the first series interface 321 of the perovskite absorber layer 32 P-type. The conductivity of the mixed perovskite is 10. -3 S·cm -1 Magnitude.

[0110] A first functional layer 34 is disposed on the perovskite absorber layer 32. The first functional layer 34 serves to selectively contact and transport electrons and to reduce reflection on the upper surface. The first functional layer 34 is a multilayer structure and uses a 10nm thick C-type material. 60 A stack of 20nm thick tin oxide and 80nm thick aluminum-doped tin oxide is used as a hole selective contact and transport layer, and magnesium fluoride is used as an anti-reflection film on the upper surface.

[0111] The crystalline silicon absorber layer 33 is made of an N-type silicon wafer with a doping concentration of 1×10⁻⁶. 16 cm -3 Conductivity 2S·cm -1 Furthermore, the second series interface 331 on the lower surface of the crystalline silicon absorber layer 33 has a textured structure and a P-type region obtained by diffusion or ion implantation doping, while the upper surface has a planar structure.

[0112] A second functional layer 35 is disposed on the lower surface of the crystalline silicon absorber layer 33. The second functional layer 35 and the crystalline silicon absorber layer 33 form a PERT (Passivated Emitter Rear Totally-diffused cell) back structure, which serves to passivate the interface and reduce the reflection of the lower surface. The second functional layer 35 is a multilayer structure, consisting of a 3nm thick silicon oxide, a 35nm thick aluminum oxide, and an 80nm thick silicon nitride thin film stack.

[0113] A single-layer electrical functional layer 31, made of nickel oxide with a thickness of 50 nm, is disposed between the perovskite absorber layer 32 and the crystalline silicon absorber layer 33. The undoped nickel oxide has a conductivity of 5 S·cm. -1 It meets the requirements.

[0114] The upper surface of the first functional layer 34 is provided with a corresponding first electrode 36, and the lower surface of the second functional layer 35 is provided with a corresponding second electrode 37. The first electrode 36 and the second electrode 37 can be made of metals or alloys such as aluminum, copper, and silver, and are at least partially disposed in the functional layer they contact, so as to achieve external output.

[0115] The tandem photovoltaic device provided in this application is a crystalline silicon and perovskite two-junction structure. By adjusting the work function of the perovskite absorber layer of the upper cell at the series interface, the work function of the perovskite absorber layer of the upper cell and the crystalline silicon absorber layer of the lower cell are matched, thereby reducing the voltage loss caused by energy level mismatch at the series interface of the upper and lower cells. At the same time, since the absorber layers of the upper and lower cells have matched work functions at the series interface, the intermediate series structure does not require a multi-layer functional layer structure for band buffering. A single-layer electrical functional layer can realize the series connection of the upper and lower cells, reducing the number of series structure layers. This reduces the parasitic absorption of free carriers caused by the introduction of multiple electrical functional layers, and also reduces the number of interfaces, thereby reducing the transmission loss introduced by interface resistance and defects.

[0116] In summary, the tandem photovoltaic device provided in this application can effectively reduce voltage and current losses and improve the overall efficiency of the tandem photovoltaic device by adjusting the work function matching of the absorption layers of the upper and lower cells at the series interface and adopting a single-layer electrical function layer series structure based on this. It can also be applied to upper and lower cells with various structures.

[0117] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0118] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims. All of these forms are within the protection scope of this application.

Claims

1. A stacked photovoltaic device, characterized by, The stacked photovoltaic device comprises a perovskite absorption layer, a crystalline silicon absorption layer, and a single-layer electrical functional layer connecting the perovskite absorption layer and the crystalline silicon absorption layer in series, a contact interface between the perovskite absorption layer and the single-layer electrical functional layer being a first series connection interface, and a contact interface between the crystalline silicon absorption layer and the single-layer electrical functional layer being a second series connection interface; wherein The conductivity type of the crystalline silicon absorption layer at the second series connection interface is different from the conductivity type of the perovskite absorption layer at the first series connection interface; The difference between the work function of the crystalline silicon absorption layer at the second series connection interface and the work function of the perovskite absorption layer at the first series connection interface is greater than or equal to -0.3 eV and less than or equal to 0.3 eV.

2. The tandem photovoltaic device of claim 1, wherein, The work function of the single-layer electrical functional layer is between a first work function and a second work function, and includes the range of the first work function and the second work function; The first work function is the work function of the perovskite absorption layer at the first series connection interface on the perovskite absorption layer; The second work function is the work function of the crystalline silicon absorption layer at the second series connection interface on the crystalline silicon absorption layer.

3. The tandem photovoltaic device of claim 1, wherein, The conductivity of the single-layer electrical functional layer is greater than or equal to the maximum of a first conductivity and a second conductivity; The first conductivity is the conductivity of the perovskite absorption layer at the first series connection interface on the perovskite absorption layer; The second conductivity is the conductivity of the crystalline silicon absorption layer at the second series connection interface on the crystalline silicon absorption layer.

4. The tandem photovoltaic device of claim 1, wherein, The conductivity type at the second series interface on the crystalline silicon absorption layer is P type, the first series interface on the perovskite absorption layer adopts N type perovskite material, the perovskite material comprises at least one of FAPbI3, MAPb 1.1 I 3.2 , MAPb 1.5 Br4, MASnI3, MAPbBr 1.5 Cl 1.5 , MAPbCl3, MAPbI3, MAPbI 2.1 Cl 0.9 , FASnI3, CsSnI3. The first series connection interface on the perovskite absorption layer also adopts an N-type dopant, and the N-type dopant comprises at least one of indium, antimony, vanadium, and bismuth.

5. The tandem photovoltaic device of claim 4, wherein, The material of the single-layer electrical functional layer comprises any one of tin oxide, nickel oxide, copper oxide, molybdenum oxide, 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, cuprous oxide, tungsten oxide, vanadium oxide, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], cuprous thiocyanate, poly(3,4-ethylenedioxythiophene), and polystyrene sulfonic acid, or a doped material of any one of the above; The doped material is doped by any one of alkali metal elements, alkaline earth metal elements, transition metal elements, and halogen metal elements.

6. The layered photovoltaic device of claim 1, wherein, The conductivity type at the second series interface on the crystalline silicon absorption layer is N type, the first series interface on the perovskite absorption layer adopts a P type perovskite material, the P type perovskite material comprises at least one of MAPbBr3, MAPb 0.91 I 2.82 , MAPbI3, FAPbI3, MASnI3, MANH3PbI3, MASnBr3, FASnI3, CsSnBr3. The first series connection interface on the perovskite absorption layer also adopts a P-type dopant, and the P-type dopant comprises at least one of sodium, potassium, copper, and oxygen.

7. The tandem photovoltaic device of claim 6, wherein, The material of the single-layer electrical functional layer comprises any one of zinc oxide, indium oxide, tin oxide, titanium oxide, molybdenum sulfide, niobium oxide, tantalum oxide, cadmium sulfide, and fullerene carbon, or a doped material of any one of the above; The doped material is doped by any one of alkali metal elements, alkaline earth metal elements, transition metal elements, and halogen metal elements.

8. The layered photovoltaic device of claim 1, wherein, The perovskite material of the perovskite absorption layer has a band gap width of 1.5 eV to 2.3 eV.

9. The layered photovoltaic device of claim 1, wherein, The stacked photovoltaic device further comprises at least one of a first interface passivation layer and a second interface passivation layer; The thickness of the first interface passivation layer is less than or equal to 5 nm, and the first interface passivation layer is located between the perovskite absorption layer and the single-layer electrical functional layer; The thickness of the second interface passivation layer is less than or equal to 5 nm, and the second interface passivation layer is located between the crystalline silicon absorption layer and the single-layer electrically functional layer.

10. The layered photovoltaic device of claim 1, wherein, The stacked photovoltaic device further comprises a first functional layer, a second functional layer, a first electrode and a second electrode; The first functional layer is located in a direction away from the single-layer electrically functional layer of the perovskite absorption layer, and the first electrode is at least partially threaded in the first functional layer; The second functional layer is located in a direction away from the single-layer electrically functional layer of the crystalline silicon absorption layer, and the second electrode is at least partially threaded in the second functional layer.

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