Detection device and driving method thereof

Abstract

The present invention provides a detection device and a driving method thereof, which improve the accuracy of hover detection. The detection device includes: a plurality of detection electrodes arranged in a row direction and a column direction to detect an approaching object; a plurality of wirings respectively connected to the plurality of detection electrodes; a detection circuit connected to the plurality of wirings to detect voltages of the plurality of detection electrodes during a plurality of detection periods; and an arithmetic circuit connected to the detection circuit to calculate a position of the approaching object using the voltages of the plurality of detection electrodes detected by the detection circuit. The detection circuit uses a set of detection electrodes adjacent to each other in the row direction and the column direction among the plurality of detection electrodes as a detection unit, the plurality of detection periods appear continuously, and during the continuity of the plurality of detection periods, in each of the detection periods, the detection electrodes included in the detection unit have one row different in the row direction or one column different in the column direction.

Description

Technical Field

[0001] The present invention relates to a detection device and a driving method thereof. Background Art

[0002] As an interface for a user to input information to a display device, a touch panel or a proximity sensor is known. By providing a touch panel or a proximity sensor in the display device, an operator can operate input buttons, icons, etc. displayed on the screen using the operator's own finger or a stylus. A display device equipped with a proximity sensor has a so-called hover detection (proximity detection) function, and detects, for example, the proximity state of the operator's own finger without the operator's own finger touching the screen.

[0003] For example, a display device having a hover detection function includes a plurality of electrodes capable of performing hover detection. In the following description, a display device having a hover detection function or a device having a hover detection function is collectively referred to as a detection device, and an electrode capable of performing hover detection is referred to as a detection electrode. In recent years, a detection device (Patent Document 1) has been developed that improves the sensitivity of hover detection by bundling a plurality of detection electrodes.

[0004] Prior Art Documents

[0005] Patent Documents

[0006] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2015-166921 Summary of the Invention

[0007] Technical Problem to be Solved by the Invention

[0008] It is known that in a detection device, the accuracy of hover detection varies depending on the position of the detection electrodes in the detection device. In recent years, with the variation in the accuracy of hover detection, a decrease in the detection accuracy of hover detection has become a problem.

[0009] In one embodiment of the present invention, in view of the above problems, one of the objects is to provide a detection device that improves the accuracy of hover detection.

[0010] Solution to Solve the Technical Problem

[0011] A detection device includes: a plurality of detection electrodes arranged in a row direction and a column direction to detect an approaching object; a plurality of wirings respectively connected to the plurality of detection electrodes; a detection circuit connected to the plurality of wirings to detect voltages of the plurality of detection electrodes during a plurality of detection periods; and an arithmetic circuit connected to the detection circuit to calculate a position of the approaching object using the voltages of the plurality of detection electrodes detected by the detection circuit. The detection circuit uses, as a detection unit, a set of detection electrodes adjacent to each other in the row direction and the column direction among the plurality of detection electrodes. The plurality of detection periods occur continuously, and during the continuity of the plurality of detection periods, in each of the detection periods, the detection electrodes included in the detection unit have one different row in the row direction or one different column in the column direction.

[0012] A driving method of a detection device, the detection device including: a plurality of detection electrodes arranged in a row direction and a column direction to detect an approaching object; a plurality of wirings respectively connected to the plurality of detection electrodes; a detection circuit connected to the plurality of wirings; and an arithmetic circuit connected to the detection circuit. In the driving method of the detection device, a set of detection electrodes adjacent to each other in the row direction and the column direction among the plurality of detection electrodes is used as a detection unit, voltages of the plurality of detection electrodes are detected during a plurality of detection periods, and a position of the approaching object is calculated using the detected voltages of the plurality of detection electrodes. The plurality of detection periods occur continuously, and during the continuity of the plurality of detection periods, in each of the detection periods, the detection electrodes included in the detection unit have one different row in the row direction or one different column in the column direction. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 is a schematic top view showing a configuration of a detection device according to an embodiment of the present invention.

[0014] Figure 2 is a schematic top view showing a configuration of a detection device according to an embodiment of the present invention.

[0015] Figure 3 is a top view showing a functional configuration of a detection device according to an embodiment of the present invention.

[0016] Figure 4 is a top view showing a functional configuration of a detection device according to an embodiment of the present invention.

[0017] Figure 5 is a diagram for explaining an example of voltage change detection in the capacitance method.

[0018] Figure 6It is a schematic end cross-sectional view of a display panel according to an embodiment of the present invention.

[0019] Figure 7 It is an equivalent circuit diagram of the pixel configuration of a display panel according to an embodiment of the present invention.

[0020] Figure 8 It is a diagram showing an example of the pixel layout according to an embodiment of the present invention.

[0021] Figure 9 It is a schematic end cross-sectional view of a pixel according to an embodiment of the present invention.

[0022] Figure 10 It is a schematic top view showing the configuration of a detection electrode, an electrode connection circuit, and a detection circuit according to an embodiment of the present invention.

[0023] Figure 11 It is a flowchart for explaining the driving method of a detection device according to an embodiment of the present invention.

[0024] Figure 12 It is a diagram for explaining the configuration (unit 0 (unit0)) of a detection device according to an embodiment of the present invention.

[0025] Figure 13 It is a diagram for explaining the configuration (unit 1 (unit1)) of a detection device according to an embodiment of the present invention.

[0026] Figure 14 It is a diagram for explaining the configuration (unit 2 (unit2)) of a detection device according to an embodiment of the present invention.

[0027] Figure 15 It is a diagram for explaining the configuration (unit 3 (unit3)) of a detection device according to an embodiment of the present invention.

[0028] Figure 16 It is a diagram showing an example of the positional relationship between a detection object and a detection device in beam scan 0 according to an embodiment of the present invention.

[0029] Figure 17 It is a diagram showing an example of the positional relationship between a detection object and a detection device in beam scan 1 according to an embodiment of the present invention.

[0030] Figure 18 It is a diagram showing an example of the positional relationship between a detection object and a detection device in beam scan 2 according to an embodiment of the present invention.

[0031] Figure 19This is a diagram showing an example of the positional relationship between the object to be detected and the detection device in the beam scan 3 according to an embodiment of the present invention.

[0032] Figure 20 This is a timing diagram for explaining the driving method of the detection device according to the second embodiment of the present invention.

[0033] Figure 21 This is a flowchart for explaining the driving method of the detection device according to the second embodiment of the present invention.

[0034] Figure 22 This is a diagram for explaining step 413 (S413) of the driving method of the detection device according to the second embodiment of the present invention.

[0035] Figure 23 This is a diagram for explaining step 415 (S415) of the driving method of the detection device according to the second embodiment of the present invention.

[0036] Figure 24 This is a diagram for explaining step 415 (S415) of the driving method of the detection device according to the second embodiment of the present invention.

[0037] Figure 25 This is a flowchart for explaining the driving method of the detection device according to the second embodiment of the present invention.

[0038] Figure 26 This is a flowchart for explaining the driving method of the detection device according to the second embodiment of the present invention.

[0039] Figure 27 This is a flowchart for explaining the driving method of the detection device according to the second embodiment of the present invention.

[0040] Figure 28 This is a flowchart for explaining the driving method of the detection device according to the third embodiment of the present invention.

[0041] Figure 29 This is a diagram for explaining the beam scan 4 in the driving method of the detection device according to the third embodiment of the present invention.

[0042] Figure 30 This is a diagram for explaining the beam scan 5 in the driving method of the detection device according to the third embodiment of the present invention.

[0043] Figure 31 This is a diagram for explaining the beam scan 6 in the driving method of the detection device according to the third embodiment of the present invention.

[0044] Figure 32 It is a diagram for explaining the bundle scan 7 in the driving method of the detection device according to the third embodiment of the present invention.

[0045] Figure 33 It is a diagram for explaining the bundle scan 8 in the driving method of the detection device according to the third embodiment of the present invention.

[0046] Figure 34 It is a diagram showing an example of the size ratio of the detection electrodes in each bundle scan of the driving method of the detection device according to the third embodiment of the present invention.

[0047] Figure 35 It is a schematic top view showing the configuration of the detection electrode, the electrode connection circuit, and the detection circuit according to the fourth embodiment of the present invention.

[0048] Figure 36 It is a schematic top view showing the configuration of the detection electrode, the electrode connection circuit, and the detection circuit according to the fifth embodiment of the present invention.

[0049] Figure 37 It is a schematic top view showing the configuration of the detection device according to the sixth embodiment of the present invention.

[0050] Figure 38 It is a top view showing the functional configuration of the detection device according to the sixth embodiment of the present invention.

[0051] Figure 39 It is a schematic end cross-sectional view of the detection device according to an embodiment of the present invention.

[0052] Explanation of reference numerals

[0053] 10: Detection device; 12: Gate driver; 13: Source driver; 14: Driving electrode driver; 20: Substrate; 30: TFT array layer; 31: Planarization film; 32: Semiconductor film; 33: Gate insulating film; 35: Interlayer film; 39a: First opening; 39b: First opening; 40: Detection electrode layer; 42: Organic film; 47: Organic insulating film; 50: Connection wiring layer; 55: First connection wiring; 56: Third opening; 57: Organic film; 60: First alignment film; 62: Pixel electrode; 70: Liquid crystal layer; 80: Second alignment film; 90: Color filter layer; 100: Counter substrate; 102: Detection surface; 106: Base film; 122: Display unit; 124: Proximity sensor unit; 126: Peripheral part; 138a: Slit; 140: Electrode layer; 150: Flexible printed circuit board; 170: Transistor; 180: Detection electrode; 194: Second opening; 200: Control circuit; 210: Wiring; 212: Wiring; 213: Wiring; 214: Wiring; 216: Wiring; 220: Pixel; 222: Source wiring; 222a: Source wiring; 222b: Source wiring; 224: Gate wiring; 230: Transistor; 232: Gate electrode; 234: Source electrode; 234a: Source electrode; 234b: Source electrode; 236: Drain electrode; 238: Holding capacitor; 240: Liquid crystal element; 300: Electrode selection circuit; 310: Multiplexer; 400: Detection circuit; 410: Detection signal amplification circuit; 414: Analog amplifier; 415: Amplification circuit; 420: AD conversion circuit; 430: Signal processing circuit; 440: Detection timing control circuit; 490: Detection object; 500: Arithmetic circuit; 510: Signal processing circuit; 520: Coordinate calculation circuit; 530: Difference calculation circuit; 540: Comparison determination circuit; 600: Display panel; 700: Detection device; 710: Detection panel. Detailed implementation mode

[0054] The implementation modes of the present invention will be described below with reference to the drawings and the like. It should be noted that the present invention can be implemented in a variety of different ways, and is not limited to the content described in the following shown implementation modes for interpretation. In addition, in order to make the description clearer, in the drawings, the configurations of each part may be schematically shown compared with the actual mode, but this is only an example and does not limit the interpretation of the present invention. Moreover, in this specification and each figure, for elements that are the same as those described in the figures that have already appeared, the same reference numerals (or reference numerals with A, B, a, b, etc. marked after the numbers) are given, and the detailed description may be appropriately omitted sometimes. It should be noted that the words "first" and "second" marked for each element are convenient identifiers used to distinguish each element, and unless there is a special description, they do not have any other more meanings.

[0055] <1. First Embodiment>

[0056] <1-1. Hardware Configuration of Detection Device 10>

[0057] Figure 1 is a schematic top view showing an example of the detection device 10 according to an embodiment of the present invention. Figure 2 is a schematic top view showing an example of the display panel 600 according to an embodiment of the present invention. Figure 1 and Figure 4 The hardware configuration of the detection device 10 shown is an example, and the hardware configuration of the detection device 10 is not limited to Figure 1 and Figure 2 the configuration shown.

[0058] As Figure 1 or Figure 2 shown, the detection device 10 includes a flexible printed circuit board 150, an electrode selection circuit 300, a detection circuit 400, an arithmetic circuit 500, and a display panel 600.

[0059] The display panel 600 and the arithmetic circuit 500 are electrically connected using the flexible printed circuit board 150. The detection circuit 400 is provided on the flexible printed circuit board 150.

[0060] The display panel 600 includes a substrate 20, a counter substrate 100, a display unit 122, a proximity sensor unit 124, a peripheral unit 126, a control circuit 200, wirings 210, 212, 213, 214, 216, and an electrode selection circuit 300.

[0061] The substrate 20 and the counter substrate 100 are bonded by a sealing portion (not shown) provided between the substrate 20 and the counter substrate 100. The sealing portion is provided in the peripheral unit 126. The display unit 122, the proximity sensor unit 124, and the peripheral unit 126 are provided on the substrate 20. The wirings 210, 212, 213, 214, and 216 are arranged on the substrate 20.

[0062] The display unit 122 and the proximity sensor unit 124 are surrounded by the counter substrate 100 and the peripheral unit 126. In the display unit 122, a plurality of pixels 220 are arranged in a matrix in the left-right direction (row direction, X direction) and the up-down direction (column direction, Y direction). The plurality of pixels 220 are respectively electrically connected to the control circuit 200 and the electrode selection circuit 300 using the wirings 210 and 212. In the proximity sensor unit 124, a plurality of detection electrodes 180 are arranged in a matrix in the left-right direction (row direction, X direction) and the up-down direction (column direction, Y direction). The plurality of detection electrodes 180 are respectively electrically connected to the electrode selection circuit 300 using the wiring 214.

[0063] As will be described later, in the detection device 10, a proximity sensor HS ([ Figure 10 ) for detecting a detection object is constituted by k (k is a positive integer) electrodes among a plurality of detection electrodes 180. The detection device 10 uses a plurality of proximity sensors HS constituted by k electrodes to detect the detection object. In the detection device 10, for example, the coefficient k is 4. In the detection device 10, the detection object is referred to as a "proximate object". The proximity sensor HS uses a set of detection electrodes (four detection electrodes when k = 4) adjacent to each other in the row direction and the column direction among the plurality of detection electrodes 180 as a detection unit, and detects the voltage (change in voltage) of the detection object.

[0064] The control circuit 200 is electrically connected to the wirings 213 and 216 in a COG (Chip on Glass) method or a COF (Chip on Film) method, for example. In addition, the control circuit 200 is electrically connected to the electrode selection circuit 300 using the wiring 213. The control circuit 200 and the electrode selection circuit 300 are electrically connected to a plurality of terminals (not shown) using the wiring 216. A plurality of terminals are arranged in the terminal portion (not shown). The plurality of terminals are electrically connected to the flexible printed circuit board 150. The control circuit 200, the electrode selection circuit 300, and the terminal portion are arranged on the substrate 20 exposed from the opposed substrate 100 in the Y direction.

[0065] The arrangement of the plurality of pixels 220 is, for example, a stripe arrangement. The plurality of pixels 220 can correspond to a sub-pixel R, a sub-pixel G, and a sub-pixel B, respectively. One pixel can also be formed by three sub-pixels. The pixel 220 is the smallest unit constituting a part of the image reproduced by the display unit 122. Each sub-pixel includes one display element. The display element is, for example, a liquid crystal element, an organic electroluminescence (EL) element, or the like. In the example of the present embodiment, the display element is a liquid crystal element 240 ( Figure 7 ). The color corresponding to the sub-pixel is determined by the characteristics of the liquid crystal element 240 or a color filter (not shown) provided on the sub-pixel.

[0066] In the stripe arrangement, the sub-pixel R, the sub-pixel G, and the sub-pixel B can be configured to provide mutually different colors. For example, the sub-pixel R, the sub-pixel G, and the sub-pixel B can each include a color filter layer 90 ( Figure 5 ) that emits the three primary colors of red, green, and blue. By supplying arbitrary voltages or currents to the three sub-pixels, the display panel 600 can display an image.

[0067] For example, the source wiring 222 is connected to the wiring 212 and extends in the Y direction, and is connected to a plurality of pixels 220 arranged in the Y direction. For example, the gate wiring 224 is connected to the wiring 210 and extends in the X direction, and is connected to a plurality of pixels 220 arranged in the X direction.

[0068] <1-2. Functional configuration of the detection device 10>

[0069] Figure 3 and Figure 4 is a top view showing the functional configuration of the detection device 10. Figure 3 and Figure 4 The functional configuration of the detection device 10 shown is an example, and the functional configuration of the detection device 10 is not limited to Figure 3 and Figure 4 the configuration shown. For configurations identical or similar to Figure 1 and Figure 2 they are omitted here.

[0070] The detection device 10 can perform a display operation and a proximity detection operation. In this case, the control circuit 200 can execute a display operation of displaying an image using the display unit 122 and a proximity detection operation of detecting the position of the detection object 490 using the proximity sensor unit 124. For example, in the detection device 10, the display operation and the proximity detection operation can be executed time-divisionally, or either the display operation or the proximity detection operation can be executed.

[0071] In the detection device 10, using a plurality of proximity sensors HS ( Figure 10 ) included in the proximity sensor unit 124, the proximity detection operation can be performed in a self-capacitance manner. In the detection device 10, the proximity detection operation can be a hovering detection operation (non-contact detection) in which the detection object 490 is detected as separated from the detection surface 102, or a touch detection (contact detection) in which the detection object is detected as in contact with the detection surface 102. Specifically, in the detection device 10, touch detection means detecting the position of the detection object 490 in a state where the detection object 490 is in contact with the detection surface 102 or in a state equivalently close to the contact state (contact state). In addition, hovering detection means detecting the position or movement of the detection object 490 in a state where the detection object 490 is not in contact with the detection surface 102 or in a state equivalently not close to the contact state (non-contact state). It should be noted that in the detection device 10 according to an embodiment of the present invention, the detection surface 102 is the same as the display surface.

[0072] In the proximity detection operation, the detection device 10 performs detection including a plurality of detection electrodes 180 ( Figure 2)Baseline scanning of the initial signal Vini1 of the voltage in their respective initial states, and beam scanning of the detection signal Vdet1 of the voltages of the plurality of detection electrodes 180 by bundling the plurality of detection electrodes 180 when the object to be detected 490 approaches. Details of the baseline scanning and beam scanning in the proximity detection operation will be described later. For example, the detection device 10 performs four baseline scans and beam scans respectively. The detection device 10, for example, performs baseline scans 0 to 3 and beam scans 0 to 3 in a time-division manner. Figure 2 )Beam scanning of the detection signal Vdet1 of the voltages of each of them. Details of the baseline scanning and beam scanning in the proximity detection operation will be described later. For example, the detection device 10 performs four baseline scans and beam scans respectively. The detection device 10, for example, performs baseline scans 0 to 3 and beam scans 0 to 3 in a time-division manner.

[0073] In the baseline scanning and beam scanning of the detection device 10, overlapping scanning in the Y direction and X direction is performed on the detection device 10. In the detection device 10, the proximity sensor HS including a plurality of detection electrodes 180 is used for control so that when comparing scans before and after multiple beam scans, overlapping scanning of a part of the plurality of detection electrodes 180 is performed. As a result, it is possible to suppress the object to be detected 490 from being detected by a plurality of proximity sensors HS and improve the detection accuracy of the detection position coordinates of the object to be detected 490.

[0074] <1-2-1. Functional configuration of the control circuit 200>

[0075] As Figure 3 shown, the control circuit 200 includes a gate driver 12, a source driver 13, and a driving electrode driver 14. The control circuit 200 is supplied with a video control signal Vdisp from the arithmetic circuit 500, for example. The control circuit 200 is a circuit that supplies control signals to the gate driver 12, the source driver 13, the driving electrode driver 14, the electrode selection circuit 300, and the detection circuit 400 using the video control signal Vdisp to control the display operation and the proximity detection operation.

[0076] The gate driver 12 is a circuit that supplies a scan signal Vscan to the gate wirings connected to the plurality of pixels 220 included in the display unit 122 Figure 2 ). For example, the gate driver 12 sequentially or simultaneously selects the gate wirings that are the objects of the display operation.

[0077] The source driver 13 is a circuit that supplies image signals Vpix corresponding to the plurality of pixels 220 to the source wirings connected to the plurality of pixels 220 included in the display unit 122 Figure 2 ). It should be noted that a part of the function of the source driver 13 may also be mounted on the display panel 600. In this case, the control circuit 200 may also generate the image signal Vpix and supply the generated image signal Vpix to the source driver 13.

[0078] The driving electrode driver 14 is, for example, a circuit that supplies a control signal Vcom to the detection electrode 180, which is a common electrode of the display panel 600, via the electrode selection circuit 300 during a display operation. Additionally, the driving electrode driver 14 is, for example, a circuit that supplies a control signal Vhs to the detection electrode 180 of the display panel 600 via the electrode selection circuit 300 during a proximity detection operation.

[0079] <1-2-2. Functional Configuration of the Electrode Selection Circuit 300>

[0080] As Figures 1 to 3 shown, the electrode selection circuit 300 is disposed between the proximity sensor unit 124 and the detection circuit 400. The electrode selection circuit 300 uses the control signal Vhs supplied from the control circuit 200 (driving electrode driver 14) via the detection circuit 400 to switch the connection and disconnection between the detection electrode 180 ( Figure 2 ) that is the object of the proximity detection operation and the detection circuit 400. For example, when one proximity sensor HS is configured using four (coefficient k is 4) detection electrodes 180, the electrode selection circuit 300 switches the connection and disconnection of four detection electrodes 180 that are adjacent to each other in the X and Y directions among the multiple detection electrodes 180 included in the proximity sensor unit 124. The electrode selection circuit 300 switches the connection and disconnection of the corresponding four detection electrodes 180 for each of the multiple proximity sensors HS. For example, the detection device 10 can separately perform beam scans 0 to 3 time-divisionally, and in each beam scan, switch the connection and disconnection between the four detection electrodes 180 and the detection signal amplification circuit 410 included in the detection circuit 400 so that the first detection electrode, the second detection electrode, the third detection electrode, and the fourth detection electrode corresponding to one proximity sensor HS are separately scanned time-divisionally and individually. Additionally, for example, the detection device 10 can separately perform beam scans 0 to 3 time-divisionally, and in each beam scan, switch the connection and disconnection between the four detection electrodes 180 and the detection signal amplification circuit 410 included in the detection circuit 400 so that all four detection electrodes 180 corresponding to one proximity sensor HS are driven simultaneously.

[0081] The detection electrodes 180 respectively detect the contact or proximity of the detection object 490 ( Figure 6 ) and supply a detection signal Vdet to the electrode selection circuit 300. The electrode selection circuit 300 generates a detection signal Vdet2 for each of the multiple proximity sensors HS using the respective detection signals Vdet1 of the corresponding detection electrodes 180. The electrode selection circuit 300 supplies the multiple detection signals Vdet2 generated for each of the multiple proximity sensors HS to the detection circuit 400.

[0082] In the detection device 10, the detection signals respectively detected by the detection electrodes 180 during the baseline scan are referred to as the initial signal Vini1, and the detection signals respectively generated by the plurality of proximity sensors HS are referred to as the initial signal Vini2.

[0083] <1-2-3. Functional configuration of the detection circuit 400>

[0084] During the proximity detection operation, as Figure 3 shown, the detection circuit 400 is supplied with the control signal Vhs from the drive electrode driver 14, and is supplied with the detection signal Vdet2 and the initial signal Vini2 from the display panel 600 (electrode selection circuit 300). The detection circuit 400 is a circuit that uses the control signal Vhs and the detection signal Vdet2 or the initial signal Vini2 to detect the detection object 490 on the proximity detection surface 102.

[0085] As Figure 4 shown, the detection circuit 400 includes a detection signal amplification circuit 410, an AD conversion circuit 420, a signal processing circuit 430, and a detection timing control circuit 440. The detection timing control circuit 440 uses the control signal Vhs supplied from the control circuit 200 (drive electrode driver 14) to control so that the detection signal amplification circuit 410, the AD conversion circuit 420, and the signal processing circuit 430 operate synchronously.

[0086] The detection circuit 400 (detection signal amplification circuit 410) is serially supplied with the plurality of detection signals Vdet2 and the initial signal Vini2 respectively generated by the plurality of proximity sensors HS via the electrode selection circuit 300. The detection signal amplification circuit 410 is supplied with the control signal Vhs via the control circuit 200 and the detection timing control circuit 440. The detection signal amplification circuit 410 uses the plurality of detection signals Vdet2, the initial signal Vini2, and the control signal Vhs to amplify the plurality of detection signals Vdet2 and the plurality of initial signals Vini2 synchronously with the control signal Vhs. The detection signal amplification circuit 410 may also be configured to suppress the noise of the plurality of detection signals Vdet2 and the plurality of initial signals Vini2 while amplifying them.

[0087] The AD conversion circuit 420 samples the plurality of analog signals serially supplied from the detection signal amplification circuit 410 at a timing synchronized with the control signal Vhs, and converts them into digital signals. The AD conversion circuit 420 serially supplies the generated plurality of digital signals to the signal processing circuit 430. In the detection device 10, a readout circuit for reading out the plurality of detection signals Vdet2 and the plurality of initial signals Vini2 may be provided, and the readout circuit may also include the AD conversion circuit 420.

[0088] The signal processing circuit 430 includes, for example, a digital signal processor (DSP), a volatile memory, and a non-volatile memory. The signal processing circuit 430 synchronously performs arithmetic processing on the data included in the plurality of digital signals supplied from the AD conversion circuit 420 with the control signal Vhs, and serially supplies the plurality of output signals Vout and the plurality of initial output signals Voutb to the arithmetic circuit 500. The signal processing circuit 430 can speed up the arithmetic processing of the data included in the plurality of digital signals by using the multiplier and adder included in the digital signal processor. For example, the signal processing circuit 430 can remove the noise included in the plurality of digital signals and form the waveforms of the plurality of digital signals. In the detection device 10, the output signal Vout is referred to as RawData.

[0089] It should be noted that the detection circuit 400 may also be provided in the same integrated circuit (IC) as the control circuit 200, and this integrated circuit is electrically connected to the flexible printed circuit board 150. In this case, the control circuit 200 is arranged on the flexible printed circuit board 150 instead of on the substrate 20.

[0090] <1-2-4. Functional configuration of the arithmetic circuit 500>

[0091] As Figure 4 shown, the arithmetic circuit 500 includes a signal processing circuit 510, a coordinate calculation circuit 520, a difference calculation circuit 530, and a comparison determination circuit 540. As will be described in detail later, the arithmetic circuit 500 synchronously uses the plurality of output signals Vout and the plurality of initial output signals Voutb supplied from the signal processing circuit 430 with the control signal Hint, and performs operations such as calculating the position of the detection object, determining whether there is a detection object, and determining whether to stop beam scanning.

[0092] The signal processing circuit 510 has the same configuration and function as the signal processing circuit 430. The signal processing circuit 510 synchronously performs arithmetic processing on the data included in the plurality of output signals Vout and the plurality of initial output signals Voutb with the control signal Hint. Similar to the signal processing circuit 430, the signal processing circuit 510 can speed up the arithmetic processing of the data included in the plurality of output signals Vout and the plurality of initial output signals Voutb by using the multiplier and adder. For example, the signal processing circuit 510 can remove the noise included in the plurality of output signals Vout and the plurality of initial output signals Voutb and form the waveforms of the plurality of output signals Vout and the plurality of initial output signals Voutb.

[0093] The coordinate calculation circuit 520 is a circuit that calculates the coordinates of the object to be detected 490 using a plurality of output signals Vout and a plurality of initial output signals Voutb in synchronization with the control signal Hint. The calculated coordinates are supplied to, for example, the difference calculation circuit 530 and the comparison determination circuit 540.

[0094] The difference calculation circuit 530 generates difference signals (absolute value |ΔV|) of the corresponding output signals Vout and the initial output signals Voutb respectively using a plurality of output signals Vout and a plurality of initial output signals Voutb in synchronization with the control signal Hint. The difference calculation circuit 530 supplies the generated plurality of absolute values |ΔV| to the comparison determination circuit 540.

[0095] The comparison determination circuit 540 determines whether there is an object to be detected 490 (presence state or non - presence state) using a plurality of absolute values |ΔV| in synchronization with the control signal Hint. For example, the comparison determination circuit 540 compares the absolute value |ΔV| with a predetermined threshold voltage (Vth). If the absolute value |ΔV| is less than the threshold voltage (Vth), it is determined that there is no object to be detected (non - presence state). The comparison determination circuit 540 compares the absolute value |ΔV| with a predetermined threshold voltage (Vth). If the absolute value |ΔV| is equal to or greater than the threshold voltage (Vth), it is determined that there is an object to be detected (presence state). When the comparison determination circuit 540 determines that there is an object to be detected (presence state), it determines whether to stop the beam scan.

[0096] It should be noted that the comparison determination circuit 540 can calculate the sum (Sum(plurality of absolute values |ΔV|)) of a plurality of absolute values |ΔV| in synchronization with the control signal Hint, and compare Sum(plurality of absolute values |ΔV|) with a predetermined threshold voltage (Vth). If Sum(plurality of absolute values |ΔV|) is less than the threshold voltage (Vth), it can be determined that there is no object to be detected (non - presence state); compare Sum(plurality of absolute values |ΔV|) with a predetermined threshold voltage (Vth). If Sum(plurality of absolute values |ΔV|) is equal to or greater than the threshold voltage (Vth), it is determined that there is an object to be detected (presence state). When the comparison determination circuit 540 determines that there is an object to be detected (presence state), it determines whether to stop the beam scan.

[0097] As described above, the detection device 10 can detect the contact state and non - contact state between the object to be detected 490 and the detection surface 102, calculate the coordinates of the object to be detected 490, and calculate the position of the object to be detected 490 with high accuracy.

[0098] <1 - 3. An Example of Voltage Change Detection in the Self - Capacitance Method>

[0099] Figure 5This is a diagram for explaining an example of voltage change detection in the self-capacitance method according to an embodiment of the present invention. Figure 5 The configuration of the detection device 10 shown is an example, and the configuration of the detection device 10 is not limited to Figure 5 the configuration shown. For configurations that are the same as or similar to Figures 1 to 4 those, the description thereof is omitted here.

[0100] As Figure 5 shown, for example, the electrode selection circuit 300 includes switches 411 and 412. The display panel 600 includes a counter substrate 100 having a detection surface 102 and a detection electrode 180 having a capacitance C1. The amplifier circuit 415 included in the detection signal amplifier circuit 410 includes an analog amplifier 414, a capacitance C3, and a switch 413. The switch 411 is electrically connected to the detection electrode 180, and the switch 412 is electrically connected between the detection electrode 180 and the analog amplifier 414. The switch 413 and the capacitance C3 are electrically connected between one input terminal and the output terminal of the analog amplifier 414. A reference voltage Vref is supplied to the other input terminal of the analog amplifier 414.

[0101] For example, in a non-existence state where there is no detection object 490, the switches 411, 412, and 413 are turned on, and the reference voltage Vref is supplied to the AC rectangular wave Vsig and the amplifier circuit 415 included in the detection signal amplifier circuit 410, and the amplifier circuit 415 is reset.

[0102] Next, for example, in a non-existence state where there is no detection object 490, when the switches 411 and 412 are turned on and an AC rectangular wave Vsig of a predetermined frequency is supplied to the detection electrode 180 having the capacitance C1, a current corresponding to the capacitance C1 flows in the detection electrode 180. The variation in the voltage corresponding to the AC rectangular wave Vsig is the detection signal Vdet, and the detection signal Vdet is input to the amplifier circuit 415. The detection signal Vdet output in the non-existence state where there is no detection object 490 corresponds to the initial signal Vini1 or the initial signal Vini2 detected in the baseline scan. After being amplified in the amplifier circuit 415, the initial signal Vini1 or the initial signal Vini2 is converted into a digital signal in the AD conversion circuit 420, and signal processing is performed in the signal processing circuit 430, and then it is output as the initial output signal Voutb. The predetermined frequency is, for example, a frequency of several kHz or more and several hundred kHz or less.

[0103] Next, in the presence state of the detection object 490, the electrostatic capacitance C2 between the detection object 490 and the detection electrode 180 is applied to the electrostatic capacitance C1 of the detection electrode 180. The electrostatic capacitance C2 changes according to the distance D between the detection object 490 and the detection electrode 180. In the presence state of the detection object 490, when the switches 411 and 412 are turned on and the AC rectangular wave Vsig is supplied to the detection electrode 180, a current corresponding to the electrostatic capacitance C1 and the electrostatic capacitance C2 flows in the detection electrode 180. The variation in the voltage corresponding to the AC rectangular wave Vsig is the detection signal Vdet, and the detection signal Vdet is input to the amplifier circuit 415. The detection signal Vdet output in the presence state of the detection object 490 corresponds to the detection signal Vdet1 or the detection signal Vdet2 detected in the beam scan. After the detection signal Vdet1 or the detection signal Vdet2 is amplified in the amplifier circuit 415, it is converted into a digital signal in the AD conversion circuit 420, and signal processing is performed in the signal processing circuit 430, and then it is output as the output signal Vout.

[0104] The detection device 10 can calculate the coordinates (position) of the detection object 490 using the absolute value |ΔV| of the difference between the output signal Vout in the presence state and the initial output signal Voutb in the non-presence state.

[0105] <1-4. Structure of the display panel 600>

[0106] Figure 6 is a schematic end cross-sectional view of the display panel 600 and is Figure 1 the end cross-sectional view of the regions indicated by A1 and A2 shown. Figure 7 is an equivalent circuit diagram showing the structure of the pixel 220 included in the display panel 600. Figure 8 is a diagram showing an example of the layout of the pixel 220. Figure 9 is a schematic end cross-sectional view of the pixel 220 and is Figure 8 the end cross-sectional view of the regions indicated by B1 and B2 of the layout of the pixel 220 shown. Figures 6 to 9 The structure of the display panel 600 shown is an example, and the structure of the display panel 600 is not limited to Figures 6 to 9 the structure shown. For structures that are the same as or similar to Figures 1 to 5 the same, the description is omitted here.

[0107] The display panel 600 includes a substrate 20, a TFT array layer 30, a detection electrode layer 40, a connection wiring layer 50, a first alignment film 60, a liquid crystal layer 70, a second alignment film 80, a color filter layer 90, and a counter substrate 100.

[0108] The TFT array layer 30 includes a plurality of transistors 170, capacitive elements, resistive elements, and wirings. The TFT array layer 30 is disposed on the substrate 20. The detection electrode layer 40 includes an organic film 42, detection electrodes 180, and wirings 214. The detection electrode layer 40 is disposed on the TFT array layer 30. The detection electrodes 180 and the wirings 214 are disposed on the same layer, and the detection electrodes 180 are connected to the wirings 214. The organic film 42 has a third opening 56 and covers the detection electrodes 180 and the wirings 214.

[0109] The connection wiring layer 50 has an organic film 57 and first connection wirings 55. The first connection wirings 55 are electrically connected to the detection electrodes 180 via the third opening 56. The organic film 57 covers the first connection wirings 55. The pixel electrodes 62 of the pixels 220 are disposed between the detection electrode layer 40 and the connection wiring layer 50 and are disposed on the organic film 57. The first alignment film 60 covers the pixel electrodes 62 and is disposed on the organic film 57.

[0110] The color filter layer 90 is disposed on the counter substrate 100 opposite to the substrate 20. The second alignment film 80 is disposed on the side opposite to the side where the counter substrate 100 is provided with respect to the color filter layer 90. The liquid crystal layer 70 is sandwiched between the first alignment film 60 and the second alignment film 80.

[0111] As Figure 7 shown, the pixel 220 includes elements such as a transistor 230, a holding capacitor 238, and a liquid crystal element 240, for example. The transistor 230 includes a gate electrode 232, a source electrode 234, and a drain electrode 236. The gate electrode 232 is connected to the gate wiring 224. The source electrode 234 is connected to the source wiring 222. The drain electrode 236 is connected to the holding capacitor 238 and the liquid crystal element 240. The drain electrode 236 and the source electrode 234 may be switched with each other, and the functions of the respective electrodes as the source and as the drain may also be interchanged.

[0112] Figure 8 The pixel 220 shown is configured to be applicable to a FFS (Fringe Field Switching) mode or an IPS (In Plane Switching) mode. In the display panel 600 having the pixels 220, a lateral electric field (for example, an electric field parallel or substantially parallel to the main surface (upper surface) of the substrate 20 in the fringe field) is formed between the detection electrodes 180 and the pixel electrodes 62. In the display panel 600, the orientation of the liquid crystal molecules included in the liquid crystal layer 70 is mainly controlled by the lateral electric field.

[0113] The pixel 220 includes a transistor 170, a source wiring 222 (source electrode 234), a gate wiring 224 (gate electrode 232), a drain electrode 236, and a pixel electrode 62. The transistor 170 includes a semiconductor film 32, a gate electrode 232, a source electrode 234, and a drain electrode 236, a first opening 39a, and a first opening 39b. The source electrode 234 is electrically connected to the semiconductor film 32 via the first opening 39a. The drain electrode 236 is electrically connected to the semiconductor film 32 via the first opening 39b. The pixel electrode 62 is electrically connected to the drain electrode 236 via a second opening 194. A capacitive element is formed using the drain electrode 236, a detection electrode 180, and a planarization film 31 ( Figure 9 ). A capacitive element is formed using the detection electrode 180, a first connection wiring 55 ( Figure 9 ), the pixel electrode 62, an organic film 57 ( Figure 9 ), and an organic film 42 ( Figure 9 ). The source electrode 234 is electrically connected to a source wiring 222a (source electrode 234a). The source wiring 222b (source electrode 234b) is the source wiring of an adjacent pixel. The gate electrode 232 is electrically connected to the gate wiring 224.

[0114] A plurality of slits 138a are provided in the pixel electrode 62. When voltages are respectively supplied to the pixel electrode 62 and the detection electrode 180, a lateral electric field (for example, an electric field parallel or substantially parallel to the main surface (upper surface) of the substrate 20 in the fringe field) is formed between the pixel electrode 62 and the detection electrode 180 via the plurality of slits 138a. The orientation of the liquid crystal elements included in the liquid crystal layer 70 is controlled by the lateral electric field. As a result, the display panel 600 can display an image.

[0115] In Figure 8 In the layout of the pixels shown, as an example, a semiconductor film 32 having a U-shaped configuration intersects the gate electrode 232. It should be noted that the shape of the semiconductor film 32 is not limited to the Figure 8 shape shown. The shape of the semiconductor film 32 forming the transistor 170 may be an L-shaped configuration or an I-shaped configuration. In addition, the structure of the transistor 170 is not limited to a double-gate structure. The structure of the transistor 170 may be a single-gate structure or a multi-gate structure having a gate electrode in such a manner that two or more channels are arranged in series or in parallel between the source electrode and the drain electrode. Further, in the transistor 170, examples of the material forming the semiconductor film 32 include polysilicon, amorphous silicon, or an oxide semiconductor.

[0116] In the detection device 10, when performing a proximity detection operation, the detection electrode 180 is one of the electrodes constituting the proximity sensor HS ( Figure 10 ).

[0117] UsingFigure 9 A method for manufacturing the display panel 600 will be described. In the method for manufacturing the display panel 600, photolithography technology used in the manufacturing of display panels can be applied. It should be noted that in the method for manufacturing the display panel 600, it is not limited to photolithography technology, and manufacturing methods commonly used in the technical field of the present invention can be applied.

[0118] The TFT array layer 30 is formed on the substrate 20. The TFT array layer 30 includes a base film 106, a semiconductor film 32, a gate insulating film 33, gate wirings 224 (gate electrodes 232), an interlayer film 35, source wirings 222 (source electrodes 234), drain electrodes 236, first openings 39a and 39b, and a planarization film 31. Transistors 170 and capacitor elements are formed in the TFT array layer 30.

[0119] For the formation method of the TFT array layer 30, the structures of the transistors 170 and capacitor elements, and each film, layer, and component, methods and components commonly used in the technical field of the present invention can be adopted. For example, a polyimide-based or acrylic-based resin can be used as the material for forming the planarization film 31. By using a polyimide-based or acrylic-based resin, light can pass through sufficiently.

[0120] A detection electrode layer 40 is formed on the planarization film 31. The detection electrode layer 40 is composed of a wiring 214 ( Figure 1 ), a detection electrode 180, and an organic film 42. After forming the wiring 214 and the detection electrode 180, the organic film 42 is coated so as to cover the wiring 214 and the detection electrode 180. The wiring 214 and the detection electrode 180 are formed on the same layer. By coating the organic film 42 so as to cover each electrode, it is possible to prevent the electrodes from coming into contact with each other and conducting. The organic film 42 alleviates the unevenness when forming the film, wiring, or transistor of the layer below the organic film 42. Therefore, the film or pattern formed on the organic film 42 is formed on a flat surface.

[0121] Next, a third opening 56 ( Figure 5 ) that opens the organic film 42 is formed. The wiring 214, the detection electrode 180, and the first connection wiring 55 are electrically connected via the third opening 56. A connection wiring layer 50 is formed on the organic film 42. The connection wiring layer 50 is composed of the first connection wiring 55 and the organic film 42. After forming the first connection wiring 55 on the organic film 42, an opening is formed that penetrates the first connection wiring 55, the organic film 57, the wiring 214, and the detection electrode 180. The organic insulating film 47 is coated so as to cover the first connection wiring 55 and the opening.

[0122] The materials for forming the wiring 214, the detection electrode 180, and the first connection wiring 55 preferably have light transmissibility and conductivity. For example, materials such as ITO (Indium Tin Oxide) and IZO (Indium Zinc Oxide) can be used for forming the wiring 214, the detection electrode 180, and the first connection wiring 55. Thin films of conductive metal materials represented by Al, Ti, or W can also be used as the materials for forming the wiring 214, the detection electrode 180, and the first connection wiring 55. In addition, the same materials as those for forming the planarization film 31 can be used for forming the organic film 42 and the organic film 57.

[0123] Next, a second opening 194 is formed. The second opening 194 opens the organic film 57. Next, the pixel electrode 62 is formed. The pixel electrode 62 is electrically connected to the drain electrode 236 via the second opening 194. After the pixel electrode 62 is formed, the first alignment film 60 is coated so as to cover the pixel electrode 62. For example, the same material as that for forming the detection electrode 180 can be used as the material for forming the pixel electrode 62. In addition, a polyimide-based resin can be used as the material for forming the first alignment film 60, for example.

[0124] According to the manufacturing method described above, a so-called substrate on the TFT array side can be fabricated. The electrode selection circuit 300, the wiring 213, and the wiring 216 are formed using transistors, capacitors, resistors, wirings, etc. provided in the TFT array layer 30, the connection wiring layer 50, and the detection electrode layer 40 of the substrate on the TFT array side.

[0125] Next, a manufacturing method for the so-called opposite substrate will be described. The opposite substrate has a counter substrate 100, a color filter layer 90, and a second alignment film 80. After the color filter layer 90 is formed on the counter substrate 100, the second alignment film 80 is coated. For example, after the color filter layer 90 is coated over the entire surface by coating, it is formed by photolithography. The color filter layer 90 has, for example, a red color filter layer, a green color filter layer, and a blue color filter layer. The same material as that for forming the first alignment film 60 can be used as the material for forming the second alignment film 80, for example.

[0126] An insulating film can also be formed between the counter substrate 100 and the color filter layer 90. By forming the insulating film, the surface of the counter substrate 100 can be made flat. Therefore, since the color filter layer 90 formed on the insulating film can be made flat, color mixing between adjacent pixels can be suppressed. In addition, a light-shielding film can also be formed on the counter substrate 100 or between the color filter layer 90 and the second alignment film 80. The layer on which the light-shielding film is formed has the function of blocking visible light, and in addition, color mixing between adjacent pixels can be suppressed.

[0127] According to the above manufacturing method, substrates on the opposite sides can be fabricated.

[0128] Finally, the liquid crystal layer 70 is sandwiched between the substrate on the TFT array side and the substrate on the opposite side. For example, using a sealing material, the liquid crystal layer 70 is sandwiched between the substrate on the TFT array side and the substrate on the opposite side, and the substrate on the TFT array side is bonded to the substrate on the opposite side. Moreover, a polarizing plate may be bonded to one or both of the substrate 20 and the counter substrate 100. In this way, the display panel 600 can be manufactured.

[0129] <1-5. Driving method of the detection device 10>

[0130] Figure 10 It is a schematic top view showing the configurations of the proximity sensor unit 124, the electrode selection circuit 300, and the detection circuit 400 of the detection device 10. Figure 11 It is a flowchart for explaining the driving method of the detection device 10. Figures 12 to 15 It is a diagram for explaining the constituent units 0 (unit0) to 3 (unit3) of the detection device 10 in the driving method of the detection device 10. Figure 16 It is a flowchart for explaining the driving method of the detection device 10. Figures 17 to 20 It is a diagram showing an example of the positional relationship between the object to be detected and the detection device in each of the scans of BundleScan0 to BundleScan3 according to an embodiment of the present invention. Figures 10 to 20 The driving method of the detection device 10 shown is an example, and the driving method of the detection device 10 is not limited to Figures 10 to 20 the configuration shown. For configurations that are the same as or similar to Figures 1 to 9 those, the description thereof is omitted herein.

[0131] In this specification and the drawings, when the coordinates of the detection electrode 180 or the proximity sensor HS are described, for the sake of convenience in explanation and considering the visibility of the drawings, etc., the description of the coordinates of the detection electrode 180 or the proximity sensor HS is limited to the minimum.

[0132] The detection device 10 can perform a proximity detection operation using Figures 10 to 20 the driving method of the detection device 10 shown.

[0133] Figure 10 It is in Figure 1 a top view of the detection device 10 shown, mainly selecting the proximity sensor unit 124, the electrode selection circuit 300, and the detection circuit 400. Relative to Figure 1 the detection device 10 shown, the proximity sensor unit 124, the electrode selection circuit 300, and the detection circuit 400 are mainly shown in detail.

[0134] A plurality of detection electrodes 180 are arranged near the proximity sensor unit 124. The electrode selection circuit 300 includes a multiplexer 310. The detection circuit 400 includes a detection signal amplification circuit 410. The detection signal amplification circuit 410 includes a plurality of amplification circuits 415. The plurality of detection electrodes 180 are electrically connected to the multiplexer 310 using wiring 214. The multiplexer 310 is electrically connected to the plurality of amplification circuits 415 using wiring 216. The detection electrodes 180 and the wiring 214 are arranged on the same layer, but for ease of explanation, it is described that the wiring 214 passes over the detection electrodes 180.

[0135] In Figure 10 the example shown, there are m×n detection electrodes 180 arranged in m columns and n rows. The coefficient m and the coefficient n are positive integers. Also, in Figure 10 the example shown, the coordinates of each of the plurality of detection electrodes 180 are represented by (m, n), but for ease of explanation, the description of the coordinates is limited to the minimum. For example, the coordinates of the detection electrode 180 at the upper left of Figure 10 which is in the 1st column and 1st row are represented by the coordinates (1, 1), the coordinates of the detection electrode 180 in the 1st column and 2nd row are represented by the coordinates (1, 2), the coordinates of the detection electrode 180 in the 1st column and 3rd row are represented by the coordinates (1, 3), the coordinates of the detection electrode 180 in the 1st column and (n - 2)th row are represented by the coordinates (1, n - 2), the coordinates of the detection electrode 180 in the 1st column and (n - 1)th row are represented by the coordinates (1, n - 1), and the coordinates of the detection electrode 180 in the 1st column and nth row are represented by the coordinates (1, n). Similarly, the coordinates of the detection electrode 180 at the upper right of Figure 10 which is in the mth column and 1st row are represented by the coordinates (m, 1), and the coordinates of the detection electrode 180 at the lower right of Figure 10 which is in the mth column and nth row are represented by the coordinates (m, n).

[0136] In Figure 10 the example shown, the proximity sensor HS is composed of four (coefficient k = 4) detection electrodes 180. For example, there are M×N proximity sensors HS arranged in M columns and N rows. The coefficient M and the coefficient N are positive integers. For example, the product of the coefficient M and the coefficient N is 1 / 4 of the product of the coefficient m and the coefficient n. Also, in Figure 10 the example shown, the coordinates of each of the plurality of proximity sensors HS are represented by HS(M, N), but for ease of explanation, the description of the coordinates is limited to the minimum. For example, the coordinates of the proximity sensor HS at the upper left of Figure 10 which is in the 1st column and 1st row are represented by the coordinates HS(1, 1), the coordinates of the proximity sensor HS in the 1st column and 2nd row are represented by the coordinates HS(1, 2), the coordinates of the proximity sensor HS in the 1st column and Nth row are represented by the coordinates HS(1, N), and at Figure 10The coordinates of the proximity sensor HS at row 1 and column M in the upper right are represented by the coordinates HS(M, 1) and are located Figure 10 The coordinates of the proximity sensor HS at row N and column M in the lower right are represented by the coordinates HS(M, N).

[0137] The multiplexer 310 switches the connection and disconnection of the corresponding four detection electrodes 180 for multiple proximity sensors HS respectively. The multiplexer 310 uses the detection signals Vdet1 ( Figure 3 ) of the corresponding detection electrodes 180 for multiple proximity sensors HS respectively to generate a detection signal Vdet2 ( Figure 3 ). The multiplexer 310 supplies the multiple detection signals Vdet2 respectively generated for multiple proximity sensors HS to the amplifier circuits 415 corresponding to the multiple proximity sensors HS respectively.

[0138] <1-5-1. Proximity Detection Operation>

[0139] As Figure 11 shown, in the driving method of the detection device 10, when a control signal Vhs is supplied from the control circuit 200 ( Figure 2 ) to the detection circuit 400 (detection timing control circuit 440) ( Figure 2 ), the proximity detection operation starts. When the detection device 10 performs each scan, between scans, a control signal Vhs can be supplied from the control circuit 200 ( Figure 2 ) to the detection circuit 400 (detection timing control circuit 440) ( Figure 2 ). For example, after the detection device 10 performs a baseline scan 3, when a control signal Vhs is supplied from the control circuit 200 to the detection circuit 400, the detection device 10 can perform a beam scan 0. After the detection device 10 performs a beam scan 0, when a control signal Vhs is supplied from the control circuit 200 to the detection circuit 400, the detection device 10 can also perform a beam scan 1. It should be noted that in the driving method of the detection device 10, Figure 11 the order of performing each scan shown is an example. For example, the order of performing baseline scans 0 to 3 can be swapped, and the order of performing beam scans 0 to 3 can also be swapped.

[0140] In the driving method of the detection device 10, an example is shown where the coefficient m is 20, the coefficient n is 8, the coefficient M is 10, and the coefficient N is 4. That is, the detection device 10 has 40 proximity sensors HS composed of 160 detection electrodes 180.

[0141] <1-5-1-1. First Initial Voltage Detection Period>

[0142] When the approach detection operation starts, in step 401 (S401), the detection device 10 performs baseline scan 0. In baseline scan 0, in the non - existence state where there is no detection target object 490, using Figure 12 the configuration of unit 0 (unit0) shown, initial signals Vini1 and Vini2 are generated for each proximity sensor HS. The signal processing of the initial signals Vini1 and Vini2 is the same as that described in <1 - 3. An example of voltage change detection in the self - capacitance method>. In the driving method of the detection device 10, the period during which baseline scan 0 is executed is called the first initial voltage detection period, and the initial output signal Voutb generated during the first initial voltage detection period is called the first initial voltage.

[0143] As Figure 12 shown, in unit 0 (unit0), the proximity sensor HS(1, 1) is composed of four detection electrodes 180 at coordinates (1, 2), (1, 3), (2, 2), and (2, 3), and the proximity sensor HS(1, 2) is composed of four detection electrodes 180 at coordinates (1, 3), (1, 4), (2, 3), and (2, 4). Similarly to the proximity sensor HS(1, 1) and the proximity sensor HS(1, 2), the proximity sensors HS(1, 3) to (10, 4) are each composed of four corresponding detection electrodes 180.

[0144] The proximity sensor HS(1, 1) is electrically connected to the 00 channel (00ch) in the multiplexer 310, and the proximity sensor HS(1, 2) is electrically connected to the 01 channel (01ch) in the multiplexer 310. Similarly to the proximity sensor HS(1, 1) and the proximity sensor HS(1, 2), the proximity sensors HS(1, 3) to (10, 4) are each electrically connected to the corresponding channel in the multiplexer 310.

[0145] <1 - 5 - 1 - 2. Second initial voltage detection period>

[0146] In step 403 (S403) following step 401 (S401), the detection device 10 performs baseline scan 1. In baseline scan 1, in the non - existence state where there is no detection target object 490, using Figure 13The configuration of unit 1 (unit1) generates an initial signal Vini1 and an initial signal Vini2 for each proximity sensor HS. Unit 1 has the coordinates of each proximity sensor HS shifted by one row of the detection electrode 180 relative to unit 0. For example, proximity sensor HS(1, 1) is composed of four detection electrodes 180 with coordinates (1, 2), (1, 3), (2, 2), and (2, 3), and proximity sensor HS(1, 4) is composed of two detection electrodes 180 with coordinates (1, 8) and (2, 8). The signal processing of the initial signal Vini1 and the initial signal Vini2 is the same as that described in <1-3. An Example of Voltage Change Detection in the Self-Capacitance Method>. In the driving method of the detection device 10, the period during which the baseline scan 1 is executed is called the second initial voltage detection period, and the initial output signal Voutb generated during the second initial voltage detection period is called the second initial voltage.

[0147] As Figure 13 As shown, in unit 1 (unit1), proximity sensor HSA is composed of detection electrodes 180 with coordinates (1, 1) to (20, 1). During the second initial voltage detection period, proximity sensor HSA is supplied with an AC rectangular wave Vsig, but is not connected to the channels in multiplexer 310. The variation in current corresponding to the AC rectangular wave Vsig for proximity sensor HSA is not converted into a voltage variation, and no initial signal Vini1 or initial signal Vini2 corresponding to proximity sensor HSA is generated.

[0148] As Figure 13 As shown, in unit 1 (unit1), proximity sensors HS(M, 1) to (M, 3) are composed of four detection electrodes 180, and proximity sensor HS(M, 4) is composed of two detection electrodes 180. The value M is an integer from 1 to 10. For example, proximity sensor HS(1, 1) is composed of detection electrodes 180 with coordinates (1, 2), (1, 3), (2, 2), and (2, 3), and proximity sensor HS(1, 4) is composed of detection electrodes 180 with coordinates (1, 8) and (2, 8). Similarly to proximity sensors HS(1, 1) to (1, 4), proximity sensors HS(2, 1) to (10, 4) are each composed of four corresponding detection electrodes 180 or two detection electrodes 180.

[0149] Similar to unit 0, in unit 1, proximity sensors HS(1, 1) to (10, 4) are electrically connected to channels 00ch to 39ch in multiplexer 310 respectively.

[0150] <1-5-1-3. Third Initial Voltage Detection Period>

[0151] In step 405 (S405) following step 403 (S403), the detection device 10 performs a baseline scan 2. In the baseline scan 2, in a non - existence state where there is no detection object 490, using the configuration of the unit 2 (unit2) shown in Figure 14 initial signals Vini1 and Vini2 are generated for each proximity sensor HS. The unit 2 is shifted in the coordinates of each proximity sensor HS by one column of the detection electrodes 180 relative to the unit 0. For example, the proximity sensor HS(1, 1) is composed of four detection electrodes 180 with coordinates (2, 1), (2, 2), (3, 1), and (3, 2) of the detection electrodes 180, and the proximity sensor HS(10, 1) is composed of two detection electrodes 180 with coordinates (20, 1) and (20, 2) of the detection electrodes 180. The signal processing of the initial signals Vini1 and Vini2 is the same as that described in <1 - 3. An example of voltage change detection in the self - capacitance method>. In the driving method of the detection device 10, the period during which the baseline scan 2 is performed is called the third initial voltage detection period, and the initial output signal Voutb generated during the third initial voltage detection period is called the third initial voltage.

[0152] As Figure 14 shown, in the unit 2 (unit2), the proximity sensor HSB is composed of the detection electrodes 180 with coordinates (1, 1) to (1, 8). During the third initial voltage detection period, the proximity sensor HSB is supplied with an AC rectangular wave Vsig, but is not connected to the channels in the multiplexer 310. The variation in current corresponding to the AC rectangular wave Vsig for the proximity sensor HSB is not converted into a voltage variation, and no initial signal Vini1 or initial signal Vini2 corresponding to the proximity sensor HSB is generated.

[0153] As Figure 14 shown, in the unit 2 (unit2), the proximity sensors HS(1, N) to (9, N) are composed of four detection electrodes 180, and the proximity sensor HS(10, N) is composed of two detection electrodes 180. The value N is an integer from 1 to 4. For example, the proximity sensor HS(1, 1) is composed of the detection electrodes 180 with coordinates (2, 1), (2, 2), (3, 1), and (3, 2), the proximity sensor HS(1, 2) is composed of the detection electrodes 180 with coordinates (2, 3), (2, 4), (3, 3), and (3, 4), and the proximity sensor HS(10, 4) is composed of the detection electrodes 180 with coordinates (20, 7) and (20, 8). Similarly to the proximity sensors HS(1, 1), (1, 2), (10, 4), the proximity sensors HS(1, 3) to (10, 3) are each composed of the corresponding four detection electrodes 180 or two detection electrodes 180.

[0154] Similarly to Unit 0, in Unit 2, proximity sensors HS(1, 1) to HS(10, 4) are electrically connected to Channel 00 (00ch) to Channel 39 (39ch) in multiplexer 310, respectively.

[0155] <1-5-1-4. Fourth Initial Voltage Detection Period>

[0156] In step 407 (S407) following step 405 (S405), detection device 10 performs baseline scan 3. In baseline scan 3, in a non-existence state where there is no detection target object 490, using Figure 15 the configuration of Unit 3 (unit3) shown, initial signal Vini1 and initial signal Vini2 are generated for each proximity sensor HS. Relative to Unit 0, the coordinates of each proximity sensor HS are shifted by one column and one row of detection electrodes 180. For example, proximity sensor HS(1, 1) is composed of four detection electrodes 180 at coordinates (2, 2), (2, 3), (3, 2), and (3, 3) of detection electrode 180, and proximity sensor HS(10, 1) is composed of one detection electrode 180 at coordinate (20, 8) of detection electrode 180.

[0157] The signal processing of initial signal Vini1 and initial signal Vini2 is the same as that described in <1-3. An Example of Voltage Change Detection in the Self-Capacitance Method>. In the driving method of detection device 10, the period during which baseline scan 3 is performed is referred to as the fourth initial voltage detection period, and the initial output signal Voutb generated during the fourth initial voltage detection period is referred to as the fourth initial voltage.

[0158] As Figure 15 shown, in Unit 3 (unit3), proximity sensor HSC is composed of detection electrodes 180 at coordinates (1, 1) to (1, 8) and (2, 1) to (20, 1). During the fourth initial voltage detection period, proximity sensor HSC is supplied with an AC rectangular wave Vsig, but is not connected to the channels in multiplexer 310. The variation in current corresponding to the AC rectangular wave Vsig for proximity sensor HSC is not converted into a voltage variation, and no initial signal Vini1 or initial signal Vini2 corresponding to proximity sensor HSC is generated.

[0159] As Figure 15As shown, in unit 3 (unit3), proximity sensors HS(M, 1) to HS(M, 3) are composed of four detection electrodes 180, where the value M is an integer from 1 to 9. Proximity sensor HS(M, 4) is composed of two detection electrodes 180, where the value M is an integer from 1 to 9. Proximity sensor HS(1, N) is composed of two detection electrodes 180, where the value N is an integer from 1 to 3. Proximity sensor HS(10, 4) is composed of one detection electrode 180. For example, proximity sensor HS(1, 1) is composed of detection electrodes 180 at coordinates (2, 2), (2, 3), (3, 2), and (3, 3), proximity sensor HS(1, 4) is composed of detection electrodes 180 at coordinates (2, 8) and (3, 8), proximity sensor HS(10, 1) is composed of detection electrodes 180 at coordinates (20, 2) and (20, 3), and proximity sensor HS(10, 4) is composed of a detection electrode 180 at coordinate (20, 8). Similarly to proximity sensors HS(1, 1), (1, 4), (10, 1), proximity sensors HS other than HS(1, 1), (1, 4), (10, 1), (10, 4) are respectively composed of four corresponding detection electrodes 180 or two detection electrodes 180.

[0160] Similarly to unit 0, proximity sensors HS(1, 1) to HS(10, 4) are respectively electrically connected to channels 00ch to 39ch in multiplexer 310.

[0161] <1-5-1-5. First Detection Voltage Detection Period>

[0162] As Figure 11 shown, in step 409 (S409) following step 407 (S407), detection device 10 performs beam scan 0. In beam scan 0, in the presence of detection object 490, using the configuration of unit 0 (unit0) shown Figure 12 below, detection signals Vdet1 and Vdet2 are generated for each proximity sensor HS.

[0163] The signal processing of detection signal Vdet1 or detection signal Vdet2 is the same as that described in <1-3. An Example of Voltage Change Detection in the Self-Capacitance Method>. In the driving method of detection device 10, the period during which beam scan 0 is performed is called the first detection voltage detection period, the output signal Vout generated during the first detection voltage detection period is called the first detection voltage, and the multiple first detection voltages generated for each proximity sensor HS are collectively called the first detection data RD0.

[0164] The arithmetic circuit 500 uses the output signals Vout generated by each proximity sensor HS to calculate the coordinates (y0, x0) of the detection target object 490 in beam scan 0. For example, as Figure 16 shown, the detection target object 490 exists across the proximity sensors HS(5, 2), HS(5, 3), HS(6, 2), and HS(6, 3) in unit 0. At this time, the arithmetic circuit 500 uses the output signal Vout generated by the proximity sensor HS(5, 2), the output signal Vout generated by the proximity sensor HS(5, 3), the output signal Vout generated by the proximity sensor HS(6, 2), and the output signal Vout generated by the proximity sensor HS(6, 3) to calculate the coordinates (y0, x0) of the detection target object 490 in beam scan 0.

[0165] <1-5-1-6. Second detection voltage detection period>

[0166] In step 417 (S417) following step 409 (S409), the detection device 10 performs beam scan 1. In beam scan 1, in the presence of the detection target object 490, using the Figure 13 configuration of unit 1 (unit1) shown, detection signals Vdet1 and Vdet2 are generated for each proximity sensor HS.

[0167] The signal processing of the detection signal Vdet1 or the detection signal Vdet2 is the same as that described in <1-3. An example of voltage change detection in the self-capacitance method>. In the driving method of the detection device 10, the period during which beam scan 1 is performed is referred to as the second detection voltage detection period, the output signal Vout generated during the second detection voltage detection period is referred to as the second detection voltage, and the multiple second detection voltages generated for each proximity sensor HS are collectively referred to as the second detection data RD1.

[0168] The arithmetic circuit 500 uses the output signals Vout generated by each proximity sensor HS to calculate the coordinates (y1, x1) of the detection target object 490 in beam scan 1. For example, as Figure 17 shown, the detection target object 490 exists across the proximity sensors HS(5, 2) and HS(6, 2) in unit 1. At this time, the arithmetic circuit 500 uses the output signal Vout generated by the proximity sensor HS(5, 2) and the output signal Vout generated by the proximity sensor HS(6, 2) to calculate the coordinates (y1, x1) of the detection target object 490 in beam scan 1.

[0169] <1-5-1-7. Third detection voltage detection period>

[0170] In step 425 (S425) following step 417 (S417), the detection device 10 performs beam scan 2. In beam scan 2, in the presence state of the detection object 490, using the configuration of the unit 2 (unit2) shown in Figure 14 detection signals Vdet1 and Vdet2 are generated for each proximity sensor HS.

[0171] The signal processing of the detection signal Vdet1 or the detection signal Vdet2 is the same as that described in <1-3. An example of voltage change detection in the self-capacitance method>. In the driving method of the detection device 10, the period during which beam scan 2 is performed is called the third detection voltage detection period, the output signal Vout generated during the third detection voltage detection period is called the third detection voltage, and the multiple third detection voltages generated for each proximity sensor HS are collectively referred to as the third detection data RD2.

[0172] The arithmetic circuit 500 uses the output signal Vout generated for each proximity sensor HS to calculate the coordinates (y2, x2) of the detection object 490 in beam scan 2. For example, as shown in Figure 18 the detection object 490 exists across the proximity sensor HS(5, 2) and the proximity sensor HS(5, 3) in the unit 2. At this time, the arithmetic circuit 500 uses the output signal Vout generated for the proximity sensor HS(5, 2) and the output signal Vout generated for the proximity sensor HS(5, 3) to calculate the coordinates (y2, x2) of the detection object 490 in beam scan 2.

[0173] <1-5-1-8. Fourth detection voltage detection period>

[0174] In step 433 (S433) following step 425 (S425), the detection device 10 performs beam scan 3. In beam scan 3, in the presence state of the detection object 490, using the configuration of the unit 3 (unit3) shown in Figure 15 detection signals Vdet1 and Vdet2 are generated for each proximity sensor HS.

[0175] The signal processing of the detection signal Vdet1 or the detection signal Vdet2 is the same as that described in <1-3. An example of voltage change detection in the self-capacitance method>. In the driving method of the detection device 10, the period during which beam scan 3 is performed is called the fourth detection voltage detection period, the output signal Vout generated during the fourth detection voltage detection period is called the fourth detection voltage, and the multiple fourth detection voltages generated for each proximity sensor HS are collectively referred to as the fourth detection data RD3.

[0176] The arithmetic circuit 500 uses the output signal Vout generated by each proximity sensor HS to calculate the coordinates (y3, x3) of the detection object 490 in the beam scan 3. For example, as Figure 19 shown, the detection object 490 exists in the proximity sensor HS(5, 2) in the unit 2. At this time, the arithmetic circuit 500 uses the output signal Vout generated by the proximity sensor HS(5, 2) to calculate the coordinates (y3, x3) of the detection object 490 in the beam scan 3.

[0177] The arithmetic circuit 500 uses the coordinates (y0, x0) of the detection object 490 in the beam scan 0, the coordinates (y1, x1) of the detection object 490 in the beam scan 1, the coordinates (y2, x2) of the detection object 490 in the beam scan 2, and the coordinates (y3, x3) of the detection object 490 in the beam scan 3 to calculate the position coordinates (Y, X) of the detection object 490. For example, the position coordinates (Y, X) of the detection object 490 can be calculated using the average value of the output signal Vout in each beam scan, or can be calculated using a known calculation method using the average value or the centroid.

[0178] When the step 433 (S433) ends, the arithmetic circuit 500 repeatedly executes the steps 409 (S409) to 433 (S433). The arithmetic circuit 500 transmits the output signal Vout respectively detected in the repeatedly executed steps 409 (S409) to 433 (S433).

[0179] It should be noted that, similarly to the second initial voltage detection period, during the second detection voltage detection period, the change in the current corresponding to the AC rectangular wave Vsig for the proximity sensor HSA is not converted into a change in voltage, and the detection signal Vdet corresponding to the proximity sensor HSA is not generated. Similarly to the third initial voltage detection period, during the third detection voltage detection period, the change in the current corresponding to the AC rectangular wave Vsig for the proximity sensor HSB is not converted into a change in voltage, and the detection signal Vdet corresponding to the proximity sensor HSB is not generated. Similarly to the fourth initial voltage detection period, during the fourth detection voltage detection period, the change in the current corresponding to the AC rectangular wave Vsig for the proximity sensor HSC is not converted into a change in voltage, and the detection signal Vdet corresponding to the proximity sensor HSC is not generated.

[0180] As described above, in the detection device 10, the first initial voltage detection period, the second initial voltage detection period, the third initial voltage detection period, the fourth initial voltage detection period, the first detection voltage detection period, the second detection voltage detection period, the third detection voltage detection period, and the fourth detection voltage detection period occur continuously. That is, in the detection device 10, multiple detection periods occur continuously, and the detection device 10 controls each proximity sensor, the control circuit 200, the electrode selection circuit 300, the detection circuit 400, the arithmetic circuit 500, etc., such that in the continuity of the multiple detection periods, in each detection period, one row of the detection electrodes included in the detection unit is different in the row direction or one column is different in the column direction.

[0181] In the detection device 10, a proximity sensor HS including a plurality of detection electrodes 180 is used, and overlapping scanning is performed by multiple beam scans. As a result, for the presence state of the detection object 490, the detection position coordinates of the detection object 490 can be detected using multiple proximity sensors HS through multiple beam scans. As a result, it is possible to suppress the detection object 490 from being detected by multiple proximity sensors HS and improve the detection accuracy of the detection position coordinates of the detection object 490.

[0182] <2. Second Embodiment>

[0183] In the driving method of the detection device 10 according to the second embodiment, a proximity detection operation capable of stopping the beam scan between beam scan 0 and beam scan 1 will be described. Figure 20 It is a timing chart for explaining the driving method of the detection device 10 according to the second embodiment of the present invention.

[0184] Figure 21 It is a flowchart for explaining the driving method of the detection device 10 according to the second embodiment of the present invention. Figure 22 It is a diagram for explaining step 413 (S413) of the driving method of the detection device 10 according to the second embodiment of the present invention. Figure 23 It is a diagram for explaining step 415 (S415) of the driving method of the detection device 10 according to the second embodiment of the present invention. Figure 24 It is a diagram for explaining step 415 (S415) of the driving method of the detection device 10 according to the second embodiment of the present invention. Figure 25 It is a flowchart for explaining Modification 1 of the driving method of the detection device 10 according to the second embodiment of the present invention. Figure 26 It is a flowchart for explaining Modification 1 of the driving method of the detection device 10 according to the second embodiment of the present invention. Figure 27 It is a flowchart for explaining Modification 2 of the driving method of the detection device 10 according to the second embodiment of the present invention.Figures 20 to 27 The driving method of the detection device 10 according to the second embodiment shown is an example, and the driving method of the detection device 10 is not limited to Figures 20 to 27 the configuration shown. For the same or similar configurations as Figures 1 to 19 those, explanations are omitted here.

[0185] Similar to the driving method of the detection device 10 according to the first embodiment, in the driving method of the detection device 10 according to the second embodiment, when a control signal Vhs is supplied from the control circuit 200( Figure 2 ) to the detection circuit 400 (detection timing control circuit 440)( Figure 2 ), the proximity detection operation also starts.

[0186] Similar to the driving method of the detection device 10 according to the first embodiment, in the driving method of the detection device 10 according to the second embodiment, an example is also shown where the coefficient m is 20, the coefficient n is 8, the coefficient M is 10, and the coefficient N is 4. That is, the detection device 10 includes 40 proximity sensors HS composed of 160 detection electrodes 180.

[0187] In Figure 20 the timing chart shown, beam scans 0, 1, 2, and 3 of the driving method of the detection device 10 according to the second embodiment are shown as modes (MODE). In addition, the control signal Vhs supplied from the control circuit 200( Figure 2 ) to the detection circuit 400 (detection timing control circuit 440)( Figure 2 ) between scans is shown. Moreover, the control signal Hint supplied from the detection circuit 400 to the arithmetic circuit 500 during the period from when the control signal Vhs is supplied from the control circuit 200( Figure 2 ) to the detection circuit 400 (detection timing control circuit 440)( Figure 2 ) until the next control signal Vhs is supplied from the control circuit 200( Figure 2 ) to the detection circuit 400 (detection timing control circuit 440)( Figure 2 ) is shown. In addition, the state of the arithmetic circuit 500 is shown.

[0188] The detection device 10 performs each scan in synchronization with, for example, the control signal Vhs. When the operation circuit 500 is supplied with the control signal Hint from the detection circuit 400, for example, it enters the read state (READ state), and reads out the output signal Vout (e.g., the first detection data RD0) generated for each proximity sensor HS and temporarily stored in the storage device included in the signal processing circuit 430 in synchronization with the control signal Hint supplied from the detection circuit 400. In addition, when the control signal Vht is supplied from the control circuit 200 to the detection circuit 400, the operation circuit 500 enters the judgment state (JUDGEMENT state), and uses the difference |ΔV| and the comparison result of the difference |ΔV| with the threshold value (Th) to determine whether to continue the scan or stop the scan.

[0189] In Figure 21 In the driving method of the detection device 10 according to the second embodiment shown, the driving method, configuration, and functions of the detection device 10 in steps 401 (S401), 403 (S403), 405 (S405), 407 (S407), 409 (S409), 417 (S417), 425 (S425), and 433 (S433) are the same as those of the driving method of the detection device 10 according to the first embodiment, and thus the description thereof is omitted here. In the description of the driving method of the detection device 10 according to the second embodiment, a driving method different from that of the detection device 10 according to the first embodiment will be described.

[0190] <2-1. Calculation of the difference |ΔV|>

[0191] In step 409 (S409), the detection device 10 performs a baseline scan 0. In step 411 (S411) following step 409 (S409), the detection device 10 calculates the difference |ΔV|.

[0192] Specifically, the difference calculation circuit 530 included in the operation circuit 500 reads out the first detection data RD0 (multiple first detection voltages Vout) generated for each proximity sensor HS and temporarily stored in the storage device included in the signal processing circuit 430 in synchronization with the control signal Hint. In addition, the difference calculation circuit 530 reads out the multiple first initial voltages Voutb generated for each proximity sensor HS and temporarily stored in the storage device included in the signal processing circuit 510.

[0193] The difference calculation circuit 530 generates difference signals (absolute value |ΔV| = Vout - Voutb) corresponding to the first detected voltage Vout and the first initial voltages Voutb respectively, using the multiple first detected voltages Vout and the multiple first initial voltages Voutb. The difference calculation circuit 530 supplies the generated multiple absolute values |ΔV| to the comparison determination circuit 540. In the second embodiment, the absolute value |ΔV| is referred to as the difference |ΔV|.

[0194] <2-2. Comparison and determination of the difference |ΔV| and the threshold value (Th)>

[0195] In step 413 (S413) following step 411 (S411), the detection device 10 compares the difference |ΔV| with the threshold value (Th). Specifically, the comparison determination circuit 540 included in the arithmetic circuit 500 compares the absolute value |ΔV| with a predetermined threshold voltage (Th) synchronously with the control signal Hint. When the difference |ΔV| is plotted against the signal strength, for example, the Figure 22 curve shown is obtained.

[0196] When the absolute value |ΔV| is less than the threshold voltage (Vth), the comparison determination circuit 540 determines that there is no detection object (non-existence state, "No" in the Figure 21 flowchart shown). When the comparison determination circuit 540 determines "No", the detection device 10 returns to step 409 (S409) and performs beam scanning 0.

[0197] When the absolute value |ΔV| is greater than or equal to the threshold voltage (Th), it is determined that there is a detection object (existence state, "Yes" in the Figure 21 flowchart shown). When the comparison determination circuit 540 determines "Yes", the comparison determination circuit 540 executes step 415 (S415).

[0198] It should be noted that the comparison determination circuit 540 may also calculate the sum (Sum (multiple absolute values |ΔV|)) of the multiple absolute values |ΔV| synchronously with the control signal Hint. The comparison determination circuit 540 may also compare the Sum (multiple absolute values |ΔV|) with a predetermined threshold voltage (Th). The comparison determination circuit 540 may determine that there is no detection object (non-existence state, in the Figure 21In the flowchart shown (if the result of the comparison and determination circuit 540 is "NO"), when the comparison and determination circuit 540 determines "NO", the detection device 10 returns to step 409 (S409) and performs beam scanning 0. It is also possible to compare the Sum (multiple absolute values |ΔV|) with a predetermined threshold voltage (Vth). If the Sum (multiple absolute values |ΔV|) is equal to or greater than the threshold voltage (Vth), it is determined that there is a detection target object (existence state, in Figure 21 the flowchart shown is "YES"). When the comparison and determination circuit 540 determines "YES", the comparison and determination circuit 540 executes step 415 (S415).

[0199] In step 415 (S415) following step 413 (S413), the detection device 10 determines whether to stop (interrupt) beam scanning.

[0200] For example, as Figure 23 shown, it is assumed that the detection target object 490 exists on the proximity sensor HS(5, 2). The proximity sensor HS(5, 2) is electrically connected to the 17 channels (17ch) in the multiplexer 310. It is assumed that the voltage change of the detection signal Vdet2 output from the 17ch is the largest, that is, the first detection voltage Vout corresponding to the 17ch is the largest. The proximity sensor HS(4, 1) is electrically connected to the 13 channels (13ch) in the multiplexer 310. It is assumed that the voltage change of the detection signal Vdet2 output from the 13ch is the second largest, that is, the first detection voltage Vout corresponding to the 13ch is the second largest.

[0201] When the difference between the data with the largest voltage change and the data with the second largest voltage change is equal to or greater than the threshold voltage (Th) (data with the largest voltage change - data with the second largest voltage change ≥ Th), the comparison and determination circuit 540 determines to stop (interrupt, in Figure 21 the flowchart shown is "YES") beam scanning. In Figure 23 the state shown, the difference between the data with the largest voltage change and the data with the second largest voltage change is equal to or greater than the threshold voltage (Th). Therefore, the comparison and determination circuit 540 determines "YES". When the comparison and determination circuit 540 determines "YES", the detection device 10 returns to step 409 (S409) and performs beam scanning 0.

[0202] For example, as Figure 24 shown, it is assumed that the detection target object 490 exists across the proximity sensor HS(4, 1) and the proximity sensor HS(5, 2). Similar to the proximity sensor shown in Figure 23 it is assumed that the voltage change of the detection signal Vdet2 output from the 17ch connected to the proximity sensor HS(5, 2) is the largest, and the voltage change of the detection signal Vdet2 output from the 13ch connected to the proximity sensor HS(4, 1) is the second largest.

[0203] In Figure 24 the state shown, the difference between the data with the largest voltage change and the data with the second largest voltage change is smaller than the threshold voltage (Th). Therefore, the comparison determination circuit 540 determines not to stop (not to interrupt, "No" in the Figure 21 flowchart shown) the beam scan. When the comparison determination circuit 540 determines "No", the detection device 10 performs beam scan 1 in step 417 (S417).

[0204] In the detection device 10 according to the second embodiment of the present invention, when detecting the detection object 490 using one proximity sensor HS, it is possible to stop the subsequent beam scan and shorten the time of the proximity detection operation.

[0205] <2-3. Modification Example 1>

[0206] Using Figure 25 and Figure 26 , a modification example 1 of the driving method of the detection device 10 according to the second embodiment of the present invention will be described. In modification example 1 of the driving method of the detection device 10, with respect to the Figure 21 flowchart shown, after beam scan 1 in step 417 (S417) of the detection device 10, the difference |ΔV| and the comparison result of the difference |ΔV| with the threshold (Th) are also used to determine whether to continue scanning or stop scanning. The driving method other than this is the same as the Figure 21 flowchart shown, so the description is omitted here.

[0207] As Figure 25 shown, in step 419 (S419) following step 417 (S417), the detection device 10 calculates the difference |ΔV| using the signals detected in baseline scan 1 and beam scan 1. The signals detected in baseline scan 1 are a plurality of second initial detection voltages Vout, and the signals detected in beam scan 1 are second detection data RD1 (a plurality of second detection voltages Vout). The driving method in step 419 (S419) is the same as the driving method in step 411 (S411) except for the above-described aspects, so the description is omitted here.

[0208] In step 421 (S421) following step 419 (S419), the detection device 10 compares the difference |ΔV| with the threshold (Th) using the signals detected in baseline scan 1 and beam scan 1. The driving method in step 421 (S421) is the same as the driving method in step 413 (S413) except for the above-described aspects, so the description is omitted here.

[0209] In step 423 (S423) following step 421 (S421), the detection device 10 determines whether to stop (interrupt) beam scanning 1.

[0210] When the absolute value |ΔV| is less than the threshold voltage (Vth), the comparison determination circuit 540 determines that there is no object to be detected (non-existence state, "No" in the Figure 25 shown flow chart). When the comparison determination circuit 540 determines "No", the detection device 10 returns to step 409 (S409) and performs beam scanning 0. When the absolute value |ΔV| is equal to or greater than the threshold voltage (Th), it is determined that there is an object to be detected (existence state, "Yes" in the Figure 25 shown flow chart). When the comparison determination circuit 540 determines "Yes", the comparison determination circuit 540 performs Figure 26 the step 425 (S425) shown. The driving method in step 423 (S423) is the same as the driving method in step 415 (S415) except for the aspects described above, so the description is omitted here.

[0211] In Modification 1 of the driving method of the detection device 10 according to the second embodiment of the present invention, in either beam scanning 0 or beam scanning 1, subsequent beam scanning can be stopped, shortening the time for the proximity detection operation.

[0212] <2-4. Modification 2>

[0213] Using Figure 25 and Figure 27 , Modification 2 of the driving method of the detection device 10 according to the second embodiment of the present invention will be described. In Modification 2 of the driving method of the detection device 10, with respect to the Figure 25 and Figure 26 shown flow chart, after beam scanning 3 in step 425 (S425), the detection device 10 also uses the difference value |ΔV| and the comparison result between the difference value |ΔV| and the threshold (Th) to determine whether to continue scanning or stop scanning. The driving method other than this is the same as the Figure 25 and Figure 26 shown flow chart, so the description is omitted here.

[0214] As Figure 27As shown, in step 427 (S427) following step 425 (S425), the detection device 10 calculates the difference |ΔV| using the signals detected in the baseline scan 2 and the beam scan 2. The signal detected in the baseline scan 2 is a plurality of third initial detection voltages Vout, and the signal detected in the beam scan 2 is the third detection data RD2 (a plurality of third detection voltages Vout). The driving method in step 427 (S427) is the same as the driving method in step 419 (S419) except for the aspects described above, so the description is omitted here.

[0215] In step 429 (S429) following step 427 (S427), the detection device 10 uses the signals detected in the baseline scan 2 and the beam scan 2 to compare the difference |ΔV| with a threshold value (Th). The driving method in step 429 (S429) is the same as the driving method in step 421 (S421) except for the aspects described above, so the description is omitted here.

[0216] In step S431 (S431) following step S429 (S429), the detection device 10 determines whether to stop (interrupt) the beam scan 2.

[0217] When the absolute value |ΔV| is less than the threshold voltage (Vth), the comparison determination circuit 540 determines that there is no object to be detected (non - existence state, "No" in the Figure 27 shown flowchart). When the comparison determination circuit 540 determines "No", the detection device 10 returns to step 409 (S409) and performs the beam scan 0. When the absolute value |ΔV| is equal to or greater than the threshold voltage (Th), it is determined that there is an object to be detected (existence state, "Yes" in the Figure 27 shown flowchart). When the comparison determination circuit 540 determines "Yes", the comparison determination circuit 540 executes step 433 (S433). The driving method in step 431 (S431) is the same as the driving method in step 423 (S423) except for the aspects described above, so the description is omitted here.

[0218] In the modification 2 of the driving method of the detection device 10 according to the second embodiment of the present invention, in any one of the beam scan 0, the beam scan 1, and the beam scan 2, the subsequent beam scan can be stopped, shortening the time for the proximity detection operation.

[0219] <3. Third Embodiment>

[0220] The driving method of the detection device 10 according to the third embodiment of the present invention is relative to Figure 11The driving method of the detection device 10 according to the first embodiment shown, which improves the detection accuracy at the four corners of the detection device 10. Specifically, in the driving method of the detection device 10 according to the third embodiment, it is different from the driving method of the detection device 10 according to the first embodiment in that baseline scans 4 to 8 and beam scans 4 to 8 are added. In the description of the driving method of the detection device 10 according to the third embodiment, the driving methods of baseline scans 4 to 8 and beam scans 4 to 8 will be mainly described. Other aspects are the same as the driving method of the detection device 10 according to the first embodiment, so the description is omitted here.

[0221] Figure 28 It is a flowchart for explaining the driving method of the detection device 10 according to the third embodiment of the present invention. Figure 29 It is a diagram for explaining the beam scan 4 (bundlescan4) in the driving method of the detection device 10 according to the third embodiment of the present invention. Figure 30 It is a diagram for explaining the beam scan 5 (bundlescan5) in the driving method of the detection device 10 according to the third embodiment of the present invention. Figure 31 It is a diagram for explaining the beam scan 6 (bundlescan6) in the driving method of the detection device 10 according to the third embodiment of the present invention. Figure 32 It is a diagram for explaining the beam scan 7 (bundlescan7) in the driving method of the detection device 10 according to the third embodiment of the present invention. Figure 33 It is a diagram for explaining the beam scan 8 (bundlescan8) in the driving method of the detection device according to the third embodiment of the present invention. Figure 34 It is a diagram showing an example of the size ratio of the detection electrodes in each beam scan of the driving method of the detection device 10 according to the third embodiment of the present invention. Figures 28 to 34 The driving method of the detection device 10 shown is an example, and the driving method of the detection device 10 is not limited to Figures 28 to 34 the configuration shown. For the configurations that are the same as or similar to Figures 1 to 27 the same, the description is omitted here.

[0222] <3-1. Fifth initial voltage detection period>

[0223] As Figure 28 shown, when approaching the start of the detection operation, in step 601 (S601), the detection device 10 performs baseline scan 4. In baseline scan 4, in the non-existence state where there is no detection object 490, using Figure 29The configuration of the unit 4 (unit4) shown generates an initial signal Vini1 and an initial signal Vini2 for each proximity sensor HS. The unit 4 is shifted one column of the detection electrode 180 to the right and one row upward in the coordinates of each proximity sensor HS with respect to the unit 0. For example, the proximity sensor HS(1, 1) is composed of two detection electrodes 180 with the coordinates (2, 1) and (3, 1) of the detection electrode 180, and the proximity sensor HS(10, 1) is composed of one detection electrode 180 with the coordinate (20, 1) of the detection electrode 180.

[0224] The initial signal Vini1 or the initial signal Vini2 is the same as that described in <1-3. An Example of Voltage Change Detection in the Self-capacitance Method>. In the driving method of the detection device 10, the period during which the baseline scan 4 is executed is called the fifth initial voltage detection period, and the initial output signal Voutb generated during the fifth initial voltage detection period is called the fifth initial voltage.

[0225] As Figure 29 As shown, in the unit 4, the proximity sensor HSD is composed of the coordinates (1, 1) to (1, 8) and (2, 8) to (10, 8) of the detection electrode 180. During the fifth initial voltage detection period, the proximity sensor HSD is supplied with the AC rectangular wave Vsig, but is not connected to the channel in the multiplexer 310. The variation in current corresponding to the AC rectangular wave Vsig for the proximity sensor HSD is not converted into a voltage variation, and the fifth initial voltage corresponding to the initial signal Vini1 or the initial signal Vini2 corresponding to the proximity sensor HSD is not generated.

[0226] As Figure 29As shown, in unit 4, the proximity sensor HS(M, 1) is composed of two detection electrodes 180, where the value M is an integer from 1 to 9. The proximity sensors HS(M, 2) to (M, 4) are composed of four detection electrodes 180, where the value M is an integer from 2 to 9. The proximity sensor HS(10, N) is composed of two detection electrodes 180, where the value N is an integer from 2 to 4. The proximity sensor HS(10, 1) is composed of one detection electrode 180. For example, the proximity sensor HS(1, 1) is composed of the detection electrodes 180 at coordinates (2, 1) and (3, 1), the proximity sensor HS(1, 2) is composed of the detection electrodes 180 at coordinates (2, 2), (2, 3), (3, 2), and (3, 3), the proximity sensor HS(10, 1) is composed of the detection electrode 180 at coordinate (20, 1), and the proximity sensor HS(10, 2) is composed of the detection electrodes 180 at coordinates (20, 2) and (20, 3). Similarly to the proximity sensors HS(1, 1), (1, 2), (10, 2), the proximity sensors HS other than HS(1, 1), (1, 2), (10, 1), (10, 2) are respectively composed of four corresponding detection electrodes 180 or two detection electrodes 180.

[0227] Similarly to unit 0, the proximity sensors HS(1, 1) to HS(10, 4) are respectively electrically connected to channels 00 (00ch) to 39 (39ch) in the multiplexer 310.

[0228] <3 - 2. Sixth Initial Voltage Detection Period>

[0229] In step 603 (S603) following step 601 (S601), the detection device 10 performs a baseline scan 5. In the baseline scan 5, in the non - existence state where there is no detection object 490, using Figure 30 the configuration of unit 5 (unit5) shown, initial signals Vini1 and initial signals Vini2 are generated for each proximity sensor HS. For unit 5 relative to unit 0, the coordinates of each proximity sensor HS are shifted upward by one row of the detection electrodes 180. For example, the proximity sensor HS(1, 1) is composed of two detection electrodes 180 at coordinates (2, 1) and (3, 1) of the detection electrodes 180, and the proximity sensor HS(10, 1) is composed of two detection electrodes 180 at coordinates (19, 1) and (20, 1) of the detection electrodes 180.

[0230] The signal processing of the initial signals Vini1 and initial signals Vini2 is the same as that described in <1 - 3. An Example of Voltage Change Detection in the Self - Capacitance Method>. In the driving method of the detection device 10, the period during which the baseline scan 5 is performed is called the sixth initial voltage detection period, and the initial output signal Voutb generated during the sixth initial voltage detection period is called the sixth initial voltage.

[0231] As Figure 30 shown, in unit 5, the proximity sensor HSE is composed of the coordinates (1, 8) to (20, 8) of the detection electrodes 180. During the sixth initial voltage detection period, the proximity sensor HSE is supplied with the AC rectangular wave Vsig, but is not connected to the channels in the multiplexer 310. The variation in the current corresponding to the AC rectangular wave Vsig for the proximity sensor HSE is not converted into a voltage variation, and the sixth initial voltage corresponding to the initial signal Vini1 or the initial signal Vini2 corresponding to the proximity sensor HSE is not generated.

[0232] As Figure 30 shown, in unit 5, the proximity sensors HS(M, 2) to (M, 4) are composed of four detection electrodes 180, and the proximity sensor HS(M, 1) is composed of two detection electrodes 180. The value M is an integer from 1 to 10. For example, the proximity sensor HS(1, 1) is composed of the coordinates (1, 1) and (2, 1) of the detection electrodes 180, and the proximity sensor HS(1, 2) is composed of the coordinates (1, 2), (1, 3), (2, 2), and (2, 3) of the detection electrodes 180. Similarly to the proximity sensors HS(1, 1) and (1, 2), the proximity sensors HS(1, 3) to (10, 4) are respectively composed of the corresponding four detection electrodes 180 or two detection electrodes 180.

[0233] Similarly to unit 0, the proximity sensors HS(1, 1) to HS(10, 4) are respectively electrically connected to the 00 channel (00ch) to the 39 channel (39ch) in the multiplexer 310.

[0234] <3 - 3. Seventh Initial Voltage Detection Period>

[0235] In step 605 (S605) following step 603 (S603), the detection device 10 performs a baseline scan 6. In the baseline scan 6, in the non - existence state without the detection object 490, using the configuration of the unit 6 (unit6) shown in Figure 31 the initial signal Vini1 and the initial signal Vini2 are generated for each proximity sensor HS. Compared with unit 0, for unit 6, the coordinates of each proximity sensor HS are shifted one column of the detection electrodes 180 to the left and one row of the detection electrodes 180 upward. For example, the proximity sensor HS(1, 1) is composed of one detection electrode 180 with the coordinate (1, 1) of the detection electrode 180, and the proximity sensor HS(10, 1) is composed of two detection electrodes 180 with the coordinates (19, 1) and (20, 1) of the detection electrodes 180.

[0236] The signal processing of the initial signals Vini1 and Vini2 is the same as that described in <1-3. An Example of Voltage Change Detection in the Self-Capacitance Method>. In the driving method of the detection device 10, the period during which the baseline scan 6 is executed is referred to as the seventh initial voltage detection period, and the initial output signal Voutb generated during the seventh initial voltage detection period is referred to as the seventh initial voltage.

[0237] As Figure 31 shown, in unit 6, the proximity sensor HSF is composed of the coordinates (1, 8) to (19, 8) and (20, 1) to (20, 8) of the detection electrode 180. During the seventh initial voltage detection period, the proximity sensor HSB is supplied with the AC rectangular wave Vsig, but is not connected to the channels in the multiplexer 310. The variation in current corresponding to the AC rectangular wave Vsig for the proximity sensor HSF is not converted into a voltage variation, and the initial signal Vini1 or the initial signal Vini2 corresponding to the proximity sensor HSF is not generated.

[0238] As Figure 31 shown, in unit 6, the proximity sensor HS(M, 1) is composed of two detection electrodes 180, and the value M is an integer from 2 to 10. The proximity sensors HS(M, 2) to (M, 4) are composed of four detection electrodes 180, and the value M is an integer from 2 to 10. The proximity sensor HS(1, N) is composed of two detection electrodes 180, and the value N is an integer from 2 to 4. The proximity sensor HS(1, 1) is composed of one detection electrode 180. The proximity sensor HS(1, 1) is composed of the detection electrode 180 at the coordinate (1, 1), the proximity sensor HS(1, 2) is composed of the detection electrodes 180 at the coordinates (1, 2) and (1, 3), the proximity sensor HS(2, 1) is composed of the detection electrodes 180 at the coordinates (2, 1) and (3, 1), and the proximity sensor HS(2, 2) is composed of the detection electrodes 180 at the coordinates (2, 2), (2, 3), (3, 2), and (3, 3). Similarly to the proximity sensors HS(1, 2), (2, 1), and (2, 2), the proximity sensors HS other than HS(1, 1), (1, 2), (2, 1), and (2, 2) are each composed of the corresponding four detection electrodes 180 or two detection electrodes 180.

[0239] Similar to unit 0, the proximity sensors HS(1, 1) to HS(10, 4) are electrically connected to the 00 channel (00ch) to the 39 channel (39ch) in the multiplexer 310, respectively.

[0240] <3-4. Eighth Initial Voltage Detection Period>

[0241] In step 607 (S607) following step 605 (S605), the detection device 10 performs a baseline scan 7. In the baseline scan 7, in a non-existence state where there is no detection object 490, using the configuration of the unit 7 shown in Figure 32 , initial signals Vini1 and Vini2 are generated for each proximity sensor HS. The unit 7 is shifted one column of the detection electrodes 180 to the left in terms of the coordinates of each proximity sensor HS with respect to the unit 0. For example, the proximity sensor HS(1, 1) is composed of two detection electrodes 180 at the coordinates (1, 1) and (1, 2) of the detection electrodes 180, and the proximity sensor HS(10, 1) is composed of four detection electrodes 180 at the coordinates (18, 1), (18, 2), (19, 1), and (19, 2) of the detection electrodes 180.

[0242] The signal processing of the initial signals Vini1 and Vini2 is the same as that described in <1-3. An Example of Voltage Change Detection in the Self-Capacitance Method>. In the driving method of the detection device 10, the period during which the baseline scan 7 is performed is referred to as the eighth initial voltage detection period, and the initial output signal Voutb generated during the eighth initial voltage detection period is referred to as the eighth initial voltage.

[0243] As shown in Figure 32 , in the unit 7, the proximity sensor HSG is composed of the coordinates (20, 1) to (20, 8) of the detection electrodes 180. During the eighth initial voltage detection period, the proximity sensor HSG is supplied with the AC rectangular wave Vsig, but is not connected to the channels in the multiplexer 310. The variation in current corresponding to the AC rectangular wave Vsig for the proximity sensor HSG is not converted into a voltage variation, and no initial signal Vini1 or initial signal Vini2 corresponding to the proximity sensor HSG is generated.

[0244] As shown in Figure 32 , in the unit 7, the proximity sensors HS(2, N) to (10, N) are composed of four detection electrodes 180, and the proximity sensor HS(1, N) is composed of two detection electrodes 180. The value N is an integer from 1 to 4. For example, the proximity sensor HS(1, 1) is composed of the detection electrodes 180 at the coordinates (1, 1) and (2, 1), and the proximity sensor HS(2, 1) is composed of the detection electrodes 180 at the coordinates (2, 1), (2, 2), (3, 1), and (3, 2). Similarly to the proximity sensors HS(1, 1) and (2, 1), the other proximity sensors HS except HS(1, 1) and (2, 1) are respectively composed of the corresponding four detection electrodes 180 or two detection electrodes 180.

[0245] Similarly to Unit 0, proximity sensors HS(1, 1) to HS(10, 4) are electrically connected to channels 00ch to 39ch in multiplexer 310, respectively.

[0246] <3-5. Ninth Initial Voltage Detection Period>

[0247] In step 609 (S609) following step 607 (S607), detection device 10 performs baseline scan 8. In baseline scan 8, in a non-existence state where there is no detection object 490, using the configuration of unit 8 shown in Figure 33 initial signals Vini1 and Vini2 are generated for each proximity sensor HS. Compared to Unit 0, for unit 8, the coordinates of each proximity sensor HS are shifted one column to the left and one row down of detection electrode 180. For example, proximity sensor HS(1, 1) is composed of two detection electrodes 180 at coordinates (1, 2) and (1, 3) of detection electrode 180, and proximity sensor HS(10, 1) is composed of four detection electrodes 180 at coordinates (18, 2), (18, 3), (19, 2), and (19, 3) of detection electrode 180.

[0248] The signal processing of initial signals Vini1 and Vini2 is the same as that described in <1-3. An Example of Voltage Change Detection in the Self-Capacitance Method>. In the driving method of detection device 10, the period during which baseline scan 8 is performed is referred to as the ninth initial voltage detection period, and the initial output signal Voutb generated during the ninth initial voltage detection period is referred to as the ninth initial voltage.

[0249] As Figure 33 shown, in unit 8, proximity sensor HSH is composed of detection electrodes 180 at coordinates (1, 1) to (20, 1) and (20, 2) to (20, 8) of detection electrode 180. During the ninth initial voltage detection period, proximity sensor HSH is supplied with an AC rectangular wave Vsig, but is not connected to the channels in multiplexer 310. The variation in current corresponding to the AC rectangular wave Vsig for proximity sensor HSH is not converted into a voltage variation, and no initial signal Vini1 or initial signal Vini2 corresponding to proximity sensor HSH is generated.

[0250] As Figure 33As shown, in unit 8, the proximity sensor HS(M, 4) is composed of two detection electrodes 180, where the value M is an integer from 2 to 10. The proximity sensors HS(M, 1) to (M, 3) are composed of four detection electrodes 180, and the value M is an integer from 2 to 10. The proximity sensor HS(1, N) is composed of two detection electrodes 180, and the value N is an integer from 1 to 3. The proximity sensor HS(1, 4) is composed of one detection electrode 180. The proximity sensor HS(1, 1) is composed of the detection electrodes 180 at coordinates (1, 2) and (1, 3), the proximity sensor HS(1, 4) is composed of the detection electrode 180 at coordinate (1, 8), the proximity sensor HS(2, 1) is composed of the detection electrodes 180 at coordinates (2, 2), (2, 3), (3, 2), and (3, 3), and the proximity sensor HS(2, 4) is composed of the detection electrodes 180 at coordinates (2, 8) and (3, 8). Similarly to the proximity sensors HS(1, 1), (2, 1), and (2, 4), the proximity sensors HS other than HS(1, 1), (1, 4), (2, 1), and (2, 4) are respectively composed of four corresponding detection electrodes 180 or two detection electrodes 180.

[0251] Similarly to unit 0, the proximity sensors HS(1, 1) to HS(10, 4) are respectively electrically connected to channels 00 (00ch) to 39 (39ch) in the multiplexer 310.

[0252] <3 - 6. First Detection Voltage Detection Period to Fourth Detection Voltage Detection Period>

[0253] As Figure 28 shown, in step 409 (S409) following step 609 (S609), the detection device 10 performs beam scan 0. Beam scan 0 is performed during the first detection voltage detection period. In steps 417 (S417) to 433 (S433) following step 409 (S409), the detection device 10 performs beam scans 1 to 3. Beam scans 1 to 3 are performed during the second detection voltage detection period to the fourth detection voltage detection period. The configurations and functions related to the driving methods of steps 417 (S417) to 433 (S433) are the same as those of the first embodiment, so the description is omitted here.

[0254] <3 - 7. Fifth Detection Voltage Detection Period>

[0255] In step 611 (S611) following step 433 (S433), the detection device 10 performs beam scan 4. In beam scan 4, in the presence state of the detection object 490, using the Figure 29 configuration of unit 4 shown, detection signals Vdet1 and Vdet2 are generated for each proximity sensor HS.

[0256] The detection signal Vdet1 or the detection signal Vdet2 is the same as that described in <1-3. An example of voltage change detection in the self-capacitance method>. In the driving method of the detection device 10, the period during which the beam scan 4 is executed is referred to as the fifth detection voltage detection period, and the output signal Vout generated during the fifth detection voltage detection period is referred to as the fifth detection voltage. The plurality of fifth detection voltages generated for each proximity sensor HS are collectively referred to as the fifth detection data RD4.

[0257] The arithmetic circuit 500 uses the output signal Vout generated for each proximity sensor HS to calculate the coordinates (y4, x4) of the detection object 490 in the beam scan 4. For example, the coordinate calculation method can use the same method as that used Figures 16 - 19 described.

[0258] <3-8. Sixth detection voltage detection period>

[0259] In step 613 (S613) following step 611 (S611), the detection device 10 executes a beam scan 5. In the beam scan 5, in the presence of the detection object 490, using Figure 30 the configuration of the unit 5 shown, the detection signals Vdet1 and Vdet2 are generated for each proximity sensor HS.

[0260] The detection signal Vdet1 or the detection signal Vdet2 is the same as that described in <1-3. An example of voltage change detection in the self-capacitance method>. In the driving method of the detection device 10, the period during which the beam scan 5 is executed is referred to as the sixth detection voltage detection period, and the output signal Vout generated during the sixth detection voltage detection period is referred to as the sixth detection voltage. The plurality of sixth detection voltages generated for each proximity sensor HS are collectively referred to as the sixth detection data RD5.

[0261] The arithmetic circuit 500 uses the output signal Vout generated for each proximity sensor HS to calculate the coordinates (y5, x5) of the detection object 490 in the beam scan 5. For example, the coordinate calculation method can use the same method as that used Figures 16 - 19 described.

[0262] <3-9. Seventh detection voltage detection period>

[0263] In step 615 (S615) following step 613 (S613), the detection device 10 executes a beam scan 6. In the beam scan 6, in the presence of the detection object 490, using Figure 31 the configuration of the unit 6 shown, the detection signals Vdet1 and Vdet2 are generated for each proximity sensor HS.

[0264] The detection signal Vdet1 or the detection signal Vdet2 is the same as that described in <1-3. An example of voltage change detection in the self-capacitance method>. In the driving method of the detection device 10, the period during which the beam scan 6 is executed is referred to as the seventh detection voltage detection period, the output signal Vout generated during the seventh detection voltage detection period is referred to as the seventh detection voltage, and the plurality of seventh detection voltages generated for each proximity sensor HS are collectively referred to as the seventh detection data RD6.

[0265] The arithmetic circuit 500 uses the output signal Vout generated for each proximity sensor HS to calculate the coordinates (y6, x6) of the detection object 490 in the beam scan 6. For example, the coordinate calculation method can use the same method as the method described using Figures 16 - 19 described.

[0266] <3-10. Eighth detection voltage detection period>

[0267] In step 617 (S617) following step 615 (S615), the detection device 10 executes a beam scan 7. In the beam scan 7, in the presence of the detection object 490, using Figure 32 the configuration of the unit 7 shown, the detection signals Vdet1 and Vdet2 are generated for each proximity sensor HS.

[0268] The detection signal Vdet1 or the detection signal Vdet2 is the same as that described in <1-3. An example of voltage change detection in the self-capacitance method>. In the driving method of the detection device 10, the period during which the beam scan 7 is executed is referred to as the eighth detection voltage detection period, the output signal Vout generated during the eighth detection voltage detection period is referred to as the eighth detection voltage, and the plurality of eighth detection voltages generated for each proximity sensor HS are collectively referred to as the eighth detection data RD7.

[0269] The arithmetic circuit 500 uses the output signal Vout generated for each proximity sensor HS to calculate the coordinates (y7, x7) of the detection object 490 in the beam scan 7. For example, the coordinate calculation method can use the same method as the method described using Figures 16 - 19 described.

[0270] <3-11. Ninth detection voltage detection period>

[0271] In step 619 (S619) following step 617 (S617), the detection device 10 executes a beam scan 8. In the beam scan 8, in the presence of the detection object 490, using Figure 33 the configuration of the unit 8 shown, the detection signals Vdet1 and Vdet2 are generated for each proximity sensor HS.

[0272] The detection signal Vdet1 or the detection signal Vdet2 is the same as that described in <1-3. An Example of Voltage Change Detection in the Self-Capacitance Method>. In the driving method of the detection device 10, the period during which the beam scanning 8 is performed is referred to as the ninth detection voltage detection period, and the output signal Vout generated during the ninth detection voltage detection period is referred to as the ninth detection voltage. The plurality of ninth detection voltages generated for each proximity sensor HS are collectively referred to as the ninth detection data RD8.

[0273] The arithmetic circuit 500 uses the output signal Vout generated for each proximity sensor HS to calculate the coordinates (y8, x8) of the object to be detected 490 in the beam scanning 8. For example, the method for calculating the coordinates can use the same method as the method described Figures 16 - 19 above.

[0274] The arithmetic circuit 500 uses the coordinates (y0, x0) of the object to be detected 490 in the beam scanning 0, the coordinates (y1, x1) of the object to be detected 490 in the beam scanning 1, the coordinates (y2, x2) of the object to be detected 490 in the beam scanning 2, the coordinates (y3, x3) of the object to be detected 490 in the beam scanning 3, the coordinates (y4, x4) of the object to be detected 490 in the beam scanning 4, the coordinates (y5, x5) of the object to be detected 490 in the beam scanning 5, the coordinates (y6, x6) of the object to be detected 490 in the beam scanning 6, the coordinates (y7, x7) of the object to be detected 490 in the beam scanning 7, and the coordinates (y8, x8) of the object to be detected 490 in the beam scanning 8 to calculate the position coordinates (Y, X) of the object to be detected 490.

[0275] When the step 619 (S619) ends, the arithmetic circuit 500 repeatedly executes the steps 409 (S409) to step 619 (S619). The arithmetic circuit 500 transmits the output signal Vout respectively detected in the repeatedly executed steps 409 (S409) to step 619 (S619).

[0276] It should be noted that, similar to the fifth initial voltage detection period, during the fifth detection voltage detection period, the variation in the current corresponding to the AC rectangular wave Vsig for the proximity sensor HSD is not converted into a voltage variation, and the detection signal Vdet corresponding to the proximity sensor HSD is not generated. Similar to the sixth initial voltage detection period, during the sixth detection voltage detection period, the variation in the current corresponding to the AC rectangular wave Vsig for the proximity sensor HSE is not converted into a voltage variation, and the detection signal Vdet corresponding to the proximity sensor HSE is not generated. Similar to the seventh initial voltage detection period, during the seventh detection voltage detection period, the variation in the current corresponding to the AC rectangular wave Vsig for the proximity sensor HSF is not converted into a voltage variation, and the detection signal Vdet corresponding to the proximity sensor HSF is not generated. Similar to the eighth initial voltage detection period, during the eighth detection voltage detection period, the variation in the current corresponding to the AC rectangular wave Vsig for the proximity sensor HSG is not converted into a voltage variation, and the detection signal Vdet corresponding to the proximity sensor HSG is not generated. Similar to the ninth initial voltage detection period, during the ninth detection voltage detection period, the variation in the current corresponding to the AC rectangular wave Vsig for the proximity sensor HSH is not converted into a voltage variation, and the detection signal Vdet corresponding to the proximity sensor HSH is not generated.

[0277] As described above, in the detection device 10, the first initial voltage detection period, the second initial voltage detection period, the third initial voltage detection period, the fourth initial voltage detection period, the fifth initial voltage detection period, the sixth initial voltage detection period, the seventh initial voltage detection period, the eighth initial voltage detection period, the ninth initial voltage detection period, the first detection voltage detection period, the second detection voltage detection period, the third detection voltage detection period, the fourth detection voltage detection period, the fifth detection voltage detection period, the sixth detection voltage detection period, the seventh detection voltage detection period, the eighth detection voltage detection period, and the ninth detection voltage detection period occur continuously. That is, in the detection device 10, multiple detection periods occur continuously, and the detection device 10 controls each proximity sensor, the control circuit 200, the electrode selection circuit 300, the detection circuit 400, the arithmetic circuit 500, etc., such that during the continuity of the multiple detection periods, within each detection period, one row of the detection electrodes included in the detection unit is different in the row direction or one column is different in the column direction.

[0278] <3-12. Size ratio of detection electrode 180>

[0279] Figure 34 It is a diagram showing the electrode ratio of the proximity sensor HS for beam scanning (Bundle Scan No.). As Figure 34As shown, in the detection device 10, the electrode ratios of the proximity sensors HS at the four corners of each unit of the beam scanning are different due to the beam scanning. The proximity sensors at the four corners are the proximity sensor HS(1, 1), the proximity sensor HS(1, 4), the proximity sensor HS(10, 1), and the proximity sensor HS(10, 4).

[0280] In the detection device 10 according to the present embodiment, the electrode ratio of the proximity sensor HS refers to the number of detection electrodes 180 included in each proximity sensor HS at the four corners of the unit of each beam scan with respect to the number of detection electrodes 180 included in each proximity sensor HS at the four corners of the unit 0 of the beam scan 0. Specifically, it is the number of detection electrodes 180 included in each proximity sensor HS at the four corners of the unit of each beam scan when the number of proximity sensors at the four corners of the unit 0 of the beam scan 0 is set to 1.

[0281] For example, in the unit 1 of the beam scan 1 (Bundle Scan No.1), the number of detection electrodes 180 included in the proximity sensor HS(1, 1) is 4. In the unit 0 of the beam scan 0, the number of detection electrodes 180 included in the proximity sensor HS(1, 1) is 4. Therefore, the electrode ratio of the proximity sensor HS(1, 1) of the beam scan 1 is 1. In the unit 1 of the beam scan 1 (Bundle ScanNo.1), the number of detection electrodes 180 included in the proximity sensor HS(1, 4) is 2. Therefore, the electrode ratio of the proximity sensor HS(1, 4) of the beam scan 1 is 1 / 2.

[0282] It should be noted that in the unit 0 of the beam scan 0, the number of detection electrodes 180 included in the proximity sensor HS(m, n) is 4.

[0283] In the unit 1 of the beam scan 1 (Bundle Scan No.1), the number of detection electrodes 180 included in the proximity sensor HS(1, 1) is 4, the number of detection electrodes 180 included in the proximity sensor HS(1, 4) is 2, the number of detection electrodes 180 included in the proximity sensor HS(10, 1) is 4, and the number of detection electrodes 180 included in the proximity sensor HS(10, 4) is 2. Therefore, in the unit 1 of the beam scan 1 (Bundle Scan No.1), the electrode ratio of the proximity sensor HS(1, 1) is 1, the electrode ratio of the proximity sensor HS(1, 4) is 1 / 2, the electrode ratio of the proximity sensor HS(10, 1) is 1, and the electrode ratio of the proximity sensor HS(10, 4) is 1 / 2.

[0284] In unit 2 of Bundle Scan No.2, the number of detection electrodes 180 included in proximity sensor HS(1,1) is 4, the number of detection electrodes 180 included in proximity sensor HS(1,4) is 4, the number of detection electrodes 180 included in proximity sensor HS(10,1) is 2, and the number of detection electrodes 180 included in proximity sensor HS(10,4) is 2. Therefore, in unit 2 of Bundle Scan No.2, the electrode ratio of proximity sensor HS(1,1) is 1, the electrode ratio of proximity sensor HS(1,4) is 1, the electrode ratio of proximity sensor HS(10,1) is 1 / 2, and the electrode ratio of proximity sensor HS(10,4) is 1 / 2.

[0285] In unit 3 of Bundle Scan No.3, the number of detection electrodes 180 included in proximity sensor HS(1,1) is 4, the number of detection electrodes 180 included in proximity sensor HS(1,4) is 2, the number of detection electrodes 180 included in proximity sensor HS(10,1) is 2, and the number of detection electrodes 180 included in proximity sensor HS(10,4) is 1. Therefore, in unit 3 of Bundle Scan No.3, the electrode ratio of proximity sensor HS(1,1) is 1, the electrode ratio of proximity sensor HS(1,4) is 1 / 2, the electrode ratio of proximity sensor HS(10,1) is 1 / 2, and the electrode ratio of proximity sensor HS(10,4) is 1 / 4.

[0286] In unit 4 of Bundle Scan No.4, the number of detection electrodes 180 included in proximity sensor HS(1,1) is 2, the number of detection electrodes 180 included in proximity sensor HS(1,4) is 4, the number of detection electrodes 180 included in proximity sensor HS(10,1) is 1, and the number of detection electrodes 180 included in proximity sensor HS(10,4) is 2. Therefore, in unit 4 of Bundle Scan No.4, the electrode ratio of proximity sensor HS(1,1) is 1 / 2, the electrode ratio of proximity sensor HS(1,4) is 1, the electrode ratio of proximity sensor HS(10,1) is 1 / 4, and the electrode ratio of proximity sensor HS(10,4) is 1.

[0287] In unit 5 of Bundle Scan No. 5, the number of detection electrodes 180 included in proximity sensor HS(1, 1) is 2, the number of detection electrodes 180 included in proximity sensor HS(1, 4) is 4, the number of detection electrodes 180 included in proximity sensor HS(10, 1) is 2, and the number of detection electrodes 180 included in proximity sensor HS(10, 4) is 4. Therefore, in unit 5 of Bundle Scan No. 5, the electrode ratio of proximity sensor HS(1, 1) is 1 / 2, the electrode ratio of proximity sensor HS(1, 4) is 1, the electrode ratio of proximity sensor HS(10, 1) is 1 / 2, and the electrode ratio of proximity sensor HS(10, 4) is 1.

[0288] In unit 6 of Bundle Scan No. 6, the number of detection electrodes 180 included in proximity sensor HS(1, 1) is 1, the number of detection electrodes 180 included in proximity sensor HS(1, 4) is 4, the number of detection electrodes 180 included in proximity sensor HS(10, 1) is 2, and the number of detection electrodes 180 included in proximity sensor HS(10, 4) is 4. Therefore, in unit 6 of Bundle Scan No. 6, the electrode ratio of proximity sensor HS(1, 1) is 1 / 4, the electrode ratio of proximity sensor HS(1, 4) is 1, the electrode ratio of proximity sensor HS(10, 1) is 1 / 2, and the electrode ratio of proximity sensor HS(10, 4) is 1.

[0289] In unit 7 of Bundle Scan No. 7, the number of detection electrodes 180 included in proximity sensor HS(1, 1) is 2, the number of detection electrodes 180 included in proximity sensor HS(1, 4) is 2, the number of detection electrodes 180 included in proximity sensor HS(10, 1) is 4, and the number of detection electrodes 180 included in proximity sensor HS(10, 4) is 4. Therefore, in unit 7 of Bundle Scan No. 7, the electrode ratio of proximity sensor HS(1, 1) is 1 / 2, the electrode ratio of proximity sensor HS(1, 4) is 1 / 2, the electrode ratio of proximity sensor HS(10, 1) is 1, and the electrode ratio of proximity sensor HS(10, 4) is 1.

[0290] In unit 8 of Bundle Scan No. 8, the number of detection electrodes 180 included in proximity sensor HS(1, 1) is 2, the number of detection electrodes 180 included in proximity sensor HS(1, 4) is 1, the number of detection electrodes 180 included in proximity sensor HS(10, 1) is 4, and the number of detection electrodes 180 included in proximity sensor HS(10, 4) is 2. Therefore, in unit 8 of Bundle Scan No. 8, the electrode ratio of proximity sensor HS(1, 1) is 1 / 2, the electrode ratio of proximity sensor HS(1, 4) is 1 / 4, the electrode ratio of proximity sensor HS(10, 1) is 1, and the electrode ratio of proximity sensor HS(10, 4) is 1 / 2.

[0291] In the detection device 10 according to the third embodiment of the present invention, among the proximity sensors HS at the four corners of each unit of each beam scan, when the electrode ratio is 1 / 2, the amplitude of the AC rectangular wave Vsig supplied to the detection electrode 180 with an electrode ratio of 1 / 2 is corrected to 2 times the amplitude of the AC rectangular wave Vsig supplied to the detection electrode 180 with an electrode ratio of 1. When the electrode ratio is 1 / 4, the amplitude of the AC rectangular wave Vsig supplied to the detection electrode 180 with an electrode ratio of 1 / 4 is corrected to 4 times the amplitude of the AC rectangular wave Vsig supplied to the detection electrode 180 with an electrode ratio of 1. In the detection device 10 according to the third embodiment of the present invention, by correcting the amplitudes of the rectangular waves of the electrodes with different electrode ratios supplied to the proximity sensors HS at the four corners, the position coordinates (Y, X) of the detection object 490 can be detected using the corrected detection signals. As a result, for the presence state of the detection object 490, the detection accuracy at the four corners of the detection device 10 can be improved.

[0292] <4. Fourth Embodiment>

[0293] In the detection device 10 according to the fourth embodiment of the present invention, compared with the detection device 10 according to the first embodiment, the proximity sensor HS is composed of 16 (coefficient k = 16) detection electrodes 180. In the detection device 10 according to the fourth embodiment of the present invention, the other configurations and functions are the same as those of the detection device 10 according to the first embodiment, so the description is omitted here. Figure 35 It is a schematic top view showing the configurations of the proximity sensor unit 124, the electrode selection circuit 300, and the detection circuit 400 of the detection device 10 according to the fourth embodiment of the present invention. Figure 35 The driving method of the detection device 10 shown is an example, and the driving method of the detection device 10 is not limited to Figure 35 the configuration shown. For Figures 1 to 34The description of the same or similar configurations is omitted here.

[0294] As Figure 35 shown, the proximity sensor HS is composed of 16 detection electrodes 180. A plurality of proximity sensors HS are arranged in 5×2 (5 columns and 2 rows, M = 5, N = 2). Similarly to the first embodiment, in the fourth embodiment, the coordinates of each of the plurality of detection electrodes 180 are also represented by (m, n). For the sake of convenience in explanation, the description of the coordinates is limited to the minimum.

[0295] As Figure 35 shown, the proximity sensor HS(1, 1) is composed of detection electrodes 180 with coordinates (1, 1), (1, 2), (1, 3), (1, 4), (2, 1), (2, 2), (2, 3), (2, 4), (3, 1), (3, 2), (3, 3), (3, 4), (4, 1), (4, 2), (4, 3) and (4, 4). Similarly to the proximity sensor HS(1, 1), the proximity sensors HS(1, 2) to (5, 2) are each composed of 16 corresponding detection electrodes 180.

[0296] In the detection device 10 according to the fourth embodiment of the present invention, the multiplexer 310 has 5×2 channels, channel 00 (00ch) to channel 09 (09ch). The proximity sensor HS(1, 1) is electrically connected to the 00 channel (00ch) in the multiplexer 310, and the proximity sensor HS(1, 2) is electrically connected to the 01 channel (01ch) in the multiplexer 310. Similarly to the proximity sensors HS(1, 1) and (1, 2), the proximity sensors HS(2, 1) to (5, 2) are electrically connected to the corresponding channels in the multiplexer 310 respectively.

[0297] The driving method of the detection device 10 according to the fourth embodiment of the present invention can use the same driving method as that in the driving methods of the first to third embodiments, in the case where the proximity sensor HS composed of four detection electrodes 180 is changed to a proximity sensor HS composed of 16 detection electrodes 180.

[0298] In the detection device 10 according to the fourth embodiment of the present invention, by increasing the number of detection electrodes 180 constituting the proximity sensor HS, the number of channels of the multiplexer 310 can be reduced.

[0299] <5. Fifth Embodiment>

[0300] In the detection device 10 according to the fifth embodiment of the present invention, as described in the detection device 10 according to the first embodiment, a configuration capable of performing bundle scanning in which a plurality of detection electrodes 180 are bundled and driven and individual scanning in which each detection electrode 180 is scanned individually will be described. In the detection device 10 according to the fifth embodiment of the present invention, the other configurations and functions are the same as those of the detection device 10 according to the first embodiment, and thus the description thereof is omitted here. Figure 36 It is a schematic top view showing the configurations of the proximity sensor unit 124, the electrode selection circuit 300, and the detection circuit 400 of the detection device 10 according to the fifth embodiment of the present invention. Figure 36 The driving method of the detection device 10 shown is an example, and the driving method of the detection device 10 is not limited to Figure 36 the configuration shown. For configurations that are the same as or similar to Figures 1 to 35 those, the description thereof is omitted here. It should be noted that, similarly to the first embodiment, in the fifth embodiment, the coordinates of each of the plurality of detection electrodes 180 are also represented by (m, n), and for the sake of convenience of description, the description of the coordinates is limited to the minimum.

[0301] In the detection device 10 according to the fifth embodiment, in order to be able to perform individual scanning, as an example, as Figure 36 shown, 20×8 (20 columns and 8 rows, M = 20, N = 8) proximity sensors HS are arranged, and the plurality of proximity sensors HS correspond to the detection electrodes on a one-to-one basis, and the coordinates of the proximity sensors HS correspond to the coordinates of the detection electrodes 180 on a one-to-one basis. In addition, the multiplexer 310 has 20×8 (20 columns and 8 rows, M = 20, N = 8) channels 000 (000ch) to channel 159 (159ch), and channels 000 to 159 are electrically connected to the amplifier circuits 415 included in the detection signal amplifier circuit 410 on a one-to-one basis. For example, the proximity sensor HS(1, 1) in the first column of the proximity sensor unit 124 is constituted by the detection electrode 180 with coordinates (1, 1) and is electrically connected to channel 000 (000ch), and channel 000 (000ch) is electrically connected to the amplifier circuit 415 corresponding to channel 000. Similarly, the proximity sensor HS(20, 8) is constituted by the detection electrode 180 with coordinates (1, 1) and is electrically connected to channel 159 (159ch), and channel 159 (159ch) is electrically connected to the amplifier circuit 415 corresponding to channel 159.

[0302] In addition, in the detection device 10 according to the fifth embodiment, similar to the first embodiment, beam scanning can be performed by bundling and driving a plurality of detection electrodes 180. In the detection device 10 according to the fifth embodiment, for example, when performing beam scanning by bundling and driving four detection electrodes 180, the connection of the switches included in the multiplexer 310 is switched, and the four detection electrodes 180 are controlled to be electrically connected to one amplifier circuit 415 in the same manner as in the first embodiment.

[0303] For example, in the detection device 10 according to the fifth embodiment, from Figure 2 or Figure 3 The detection timing control circuit 440 shown sends switch control signals (not shown) to the electrode selection circuit 300, the detection signal amplification circuit 410, the AD conversion circuit 420, and the signal control circuit 430. Using the switches included in the multiplexer 310, it is possible to switch the channels 000 (000ch), 001 (001ch), 008 (008ch), and 009 (009ch) electrically connected to the coordinates (1, 1), (1, 2), (2, 1), and (2, 2) to be electrically connected to one amplifier circuit 415 (for example, the amplifier circuit 415 corresponding to channel 000 (000ch)).

[0304] The driving method of the detection device 10 according to the fifth embodiment of the present invention can use the same driving method as in the driving methods according to the first to third embodiments, in the case where the proximity sensor HS composed of four detection electrodes 180 is changed to a proximity sensor HS composed of one detection electrode 180.

[0305] In the detection device 10 according to the fifth embodiment of the present invention, the proximity sensor HS and the detection electrode 180 are in a one-to-one correspondence, and the proximity sensor unit 124 is formed with high fineness. Therefore, compared with the case where the configuration of the rough proximity sensor unit is rough, the detection device 10 according to the fifth embodiment of the present invention can detect the coordinates of the detection object 490 with higher accuracy at the center and four corners of the detection device 10.

[0306] <6. Sixth Embodiment>

[0307] The detection device 700 according to the sixth embodiment of the present invention does not include the components and functions related to display with respect to the detection device 700 according to the first embodiment. The other components and functions are the same as those of the detection device 10 according to the first embodiment, so the description is omitted here. Figure 37 It is a schematic top view showing the configuration of the detection device 700 according to the sixth embodiment of the present invention. Figure 38This is a top view showing the functional configuration of the detection device 700 according to the sixth embodiment of the present invention. Figure 39 This is a schematic end cross-sectional view of the detection device 700. Figures 37 to 39 The driving method of the detection device 700 shown is an example, and the driving method of the detection device 700 is not limited to Figures 37 to 39 the configuration shown. For configurations that are the same as or similar to Figures 1 to 36 those, the description is omitted here.

[0308] As Figure 37 shown, the detection device 700 includes a flexible printed circuit board 150, an electrode selection circuit 300, a detection circuit 400, an arithmetic circuit 500, and a detection panel 710. The detection panel 710 and the arithmetic circuit 500 are electrically connected using the flexible printed circuit board 150. The detection circuit 400 is provided on the flexible printed circuit board 150.

[0309] The detection panel 710 includes a substrate 20, a cover layer 100, a proximity sensor unit 124, a control circuit 200, wirings 210, 212, 213, 214, 216, and an electrode selection circuit 300.

[0310] The detection panel 710 has a configuration and functions obtained by removing the components and functions related to display from the display panel 600 according to the first embodiment. In the detection panel 710, the components and functions other than those related to display are the same as those of the display panel 600 according to the first embodiment, and thus the description is omitted here.

[0311] The cover layer 100 protects the detection electrode layer 30 and suppresses damage to the detection electrodes 180 and the inorganic film 42. The cover layer 100 is, for example, a cover glass. For example, the cover layer 100 and the detection electrode layer 40 are joined by a transparent bonding layer (not shown) provided between the cover layer 100 and the detection electrode layer 30. In the detection panel 710 according to the sixth embodiment, an example having the cover layer 100 is shown, but the cover layer 100 is provided as needed based on the use, specifications, etc. of the detection panel 710. The proximity sensor unit 124, the wirings 213, 214, and 216 are arranged on the substrate 20. In the proximity sensor unit 124, a plurality of detection electrodes 180 are arranged in a matrix in the left - right direction (row direction, X direction) and the up - down direction (column direction, Y direction). The plurality of detection electrodes 180 are electrically connected to the electrode selection circuit 300 using the wirings 214 respectively.

[0312] As Figure 38As shown, the control circuit 200 has a driving electrode driver 14. The control circuit 200 has a configuration and function obtained by removing the configurations and functions related to the gate driver 12 and the source driver 13 from the control circuit 200 according to the first embodiment. The driving electrode driver 14 is a circuit that supplies a control signal Vhs to the detection electrode 180 of the detection panel 710 via the electrode selection circuit 300.

[0313] The detection device 700 has the same configuration and function of the detection electrode 180, the configuration and function of the proximity sensor HS, the configuration and function of the electrode selection circuit 300, the configuration and function of the detection circuit 400, and the configuration and function of the arithmetic circuit 500 as those of the first embodiment. In addition, the detection device 700 can perform a proximity detection operation using the same driving method as that of the first embodiment.

[0314] Figure 39 is Figure 37 An end cross-sectional view of the regions represented by C1 and C2 as shown. The detection panel 710 has an electrode layer 140, a substrate 20, a TFT array layer 30, a detection electrode layer 40, and a cover layer 100.

[0315] The electrode layer 140 is disposed on a surface opposite to the surface on which the TFT array layer 30 is disposed with respect to the substrate 20. The electrode layer 140 is electrically connected to the detection circuit 400 and the arithmetic circuit 500, for example, using a through electrode (not shown) formed on the substrate 20 or a flexible substrate (not shown). In the proximity detection operation of the detection device 700, when the detection device 700 performs, for example, the same beam scan 1 ( Figure 13 ) as that of the first embodiment, an AC rectangular wave Vsig is supplied to the proximity sensor HSA ( Figure 13 ). The electrode layer 140 is supplied with the same AC rectangular wave Vsig as that of the proximity sensor HSA. The electrode layer 140 can shield signals or electric fields from the outside of the detection device 700. As a result, the detection device 700 can detect the position of the detection object 490 with high accuracy.

[0316] The TFT array layer 30 includes a plurality of transistors 170, capacitive elements, resistive elements, and wirings. The TFT array layer 30 is disposed on the substrate 20. The detection electrode layer 40 includes an inorganic film 42, a detection electrode 180, and a wiring 214. The detection electrode layer 40 is disposed on the TFT array layer 30. The detection electrode 180 and the wiring 214 are disposed on the same layer, and the detection electrode 180 is connected to the wiring 214. The electrode selection circuit 300, the wiring 213, and the wiring 216 are formed using transistors, capacitors, resistors, wirings, etc. provided on the TFT array layer 30 of the substrate on the TFT array side, the connection wiring layer 50, and the detection electrode layer 40. The counter substrate 100 is disposed on the detection electrode layer 40.

[0317] The detection device 700 according to the sixth embodiment of the present invention can, similarly to the first embodiment, detect the contact state and non-contact state between the detection object 490 and the detection surface 102 of the covering layer 100, calculate the coordinates of the detection object 490, and calculate the position of the detection object 490 with high accuracy.

[0318] As embodiments of the present invention, as long as they do not conflict with each other, the above-described embodiments can be appropriately combined and implemented.

[0319] Even for other effects different from the effects brought about by the aspects of the above-described embodiments of the detection device and the driving method of the detection device, those that are clear from the description of this specification or easily predictable by those skilled in the art can of course also be understood as being brought about by the present invention.

Claims

1. A detection device having: a plurality of detection electrodes arranged in a row direction and a column direction to detect an approaching object; a plurality of wirings respectively connected to the plurality of detection electrodes; a detection circuit connected to the plurality of wirings to detect voltages of the plurality of detection electrodes during a plurality of detection periods; and an arithmetic circuit connected to the detection circuit, calculating a position of the approaching object using voltages of the plurality of detection electrodes detected by the detection circuit, wherein the detection circuit uses, as a detection unit, a set of detection electrodes adjacent to each other in the row direction and the column direction among the plurality of detection electrodes, the plurality of detection periods appear continuously, and during the continuity of the plurality of detection periods, in each of the detection periods, the detection electrodes included in the detection unit have one different row in the row direction or one different column in the column direction.

2. The detection device according to claim 1, wherein among a set of detection electrodes adjacent to each other in the row direction and the column direction among the plurality of detection electrodes, a first set of detection electrodes includes: a first electrode; a second electrode arranged along the column direction with respect to the first electrode; a third electrode arranged along the row direction intersecting the column direction with respect to the first electrode; and a fourth electrode arranged along the row direction with respect to the second electrode and arranged along the column direction with respect to the third electrode, the plurality of detection periods include a first detection voltage detection period, a second detection voltage detection period following the first detection voltage detection period, a third detection voltage detection period following the second detection voltage detection period, and a fourth detection voltage detection period following the third detection voltage detection period, voltages of the plurality of detection electrodes include: a first detection voltage detected using the first electrode, the second electrode, the third electrode, and the fourth electrode during the first detection voltage detection period; a second detection voltage detected using at least the second electrode and the fourth electrode during the second detection voltage detection period; a third detection voltage detected using at least the third electrode and the fourth electrode during the third detection voltage detection period; and a fourth detection voltage detected using at least the fourth electrode during the fourth detection voltage detection period, and the arithmetic circuit calculates the position of the object using at least the first detection voltage.

3. The detection device according to claim 2, wherein the arithmetic circuit calculates the position of the object using the first detection voltage, the second detection voltage, the third detection voltage, and the fourth detection voltage.

4. The detection device according to claim 2, wherein the detection circuit detects a first initial voltage using the first electrode, the second electrode, the third electrode, and the fourth electrode during a first initial voltage detection period before the first detection voltage detection period, the arithmetic circuit calculates a difference using the first initial voltage and the first detection voltage, and the arithmetic circuit compares the difference with a predetermined threshold value to determine whether the object is approaching.

5. The detection device according to claim 4, wherein When the difference is greater than the predetermined threshold value, the arithmetic circuit determines that the object is approaching. Based on the first detection voltage, during the second detection voltage detection period following the first detection voltage detection period, it is determined whether to interrupt the detection of the second detection voltage.

6. The detection device according to claim 2, wherein, Among a set of detection electrodes adjacent to each other in the row direction and the column direction among the plurality of detection electrodes, a second set of detection electrodes adjacent to the first set of detection electrodes has: A fifth electrode arranged on the opposite side of the first electrode along the row direction with the third electrode; A sixth electrode arranged along the column direction with the fifth electrode, and arranged on the opposite side of the second electrode along the column direction with the fourth electrode; A seventh electrode arranged on the opposite side of the third electrode along the row direction with the fifth electrode; and An eighth electrode arranged on the opposite side of the fourth electrode along the row direction with the sixth electrode, and arranged along the column direction with the seventh electrode.

7. The detection device according to claim 6, wherein, The voltages of the plurality of detection electrodes include: A fifth detection voltage detected using the fifth electrode, the sixth electrode, the seventh electrode, and the eighth electrode during the first detection voltage detection period; A sixth detection voltage detected using at least the sixth electrode and the eighth electrode during the second detection voltage detection period; The third detection voltage detected using the third electrode, the fourth electrode, the fifth electrode, and the sixth electrode during the third detection voltage detection period; A seventh detection voltage detected using at least the seventh electrode and the eighth electrode during the third detection voltage detection period; The fourth detection voltage detected using at least the fourth electrode and the sixth electrode during the fourth detection voltage detection period; and An eighth detection voltage detected using at least the eighth electrode during the fourth detection voltage detection period, The arithmetic circuit calculates the position of the object using at least the first detection voltage and the fifth detection voltage.

8. The detection device according to claim 7, wherein, The arithmetic circuit calculates the position of the object using the first detection voltage, the second detection voltage, the third detection voltage, the fourth detection voltage, the fifth detection voltage, the sixth detection voltage, the seventh detection voltage, and the eighth detection voltage.

9. The detection device according to claim 7, wherein, During a first initial voltage detection period before the first detection voltage detection period, the detection circuit Uses the first electrode, the second electrode, the third electrode, and the fourth electrode to detect a first initial voltage, and Uses the fifth electrode, the sixth electrode, the seventh electrode, and the eighth electrode to detect a fifth initial voltage, The arithmetic circuit calculates a first difference using the first initial voltage and the first detection voltage, The arithmetic circuit calculates a fifth difference using the fifth initial voltage and the fifth detection voltage. The arithmetic circuit compares the sum of the first difference and the fifth difference with a predetermined threshold value to determine whether the object is approaching.

10. The detection device according to claim 9, wherein, when the sum value is greater than the predetermined threshold value, the arithmetic circuit determines that the object is approaching, the arithmetic circuit determines whether to interrupt the detection of the second detection voltage during the second detection voltage detection period following the first detection voltage detection period according to the first detection voltage and the fifth detection voltage.

11. A driving method for a detection device, the detection device having: a plurality of detection electrodes arranged in a row direction and a column direction to detect an approaching object ； a plurality of wirings respectively connected to the plurality of detection electrodes; a detection circuit connected to the plurality of wirings; and an arithmetic circuit connected to the detection circuit, in the driving method of the detection device, a set of detection electrodes adjacent to each other in the row direction and the column direction is taken as a detection unit from the plurality of detection electrodes, and the voltages of the plurality of detection electrodes are detected according to a plurality of detection periods, using the detected voltages of the plurality of detection electrodes to calculate the position of the approaching object, the plurality of detection periods appear continuously, during the continuity of the plurality of detection periods, in each detection period, the detection electrodes included in the detection unit have one different row in the row direction or one different column in the column direction.

12. The driving method for the detection device according to claim 11, wherein, from a set of detection electrodes adjacent to each other in the row direction and the column direction among the plurality of detection electrodes, the first set of detection electrodes includes: a first electrode; a second electrode arranged along the column direction with the first electrode; a third electrode arranged along the row direction intersecting the column direction with the first electrode; and a fourth electrode arranged along the row direction with the second electrode and arranged along the column direction with the third electrode, in the driving method of the detection device, during the first detection voltage detection period, the first detection voltage is detected using the first electrode, the second electrode, the third electrode and the fourth electrode, during the second detection voltage detection period, the second detection voltage is detected using at least the second electrode and the fourth electrode, during the third detection voltage detection period, the third detection voltage is detected using at least the third electrode and the fourth electrode, during the fourth detection voltage detection period, the fourth detection voltage is detected using at least the fourth electrode, at least the first detection voltage is used to calculate the position of the object.

13. The driving method for the detection device according to claim 12, wherein, the position of the object is calculated using the first detection voltage, the second detection voltage, the third detection voltage and the fourth detection voltage.

14. The driving method for the detection device according to claim 12, wherein, During a first initial voltage detection period before the first detection voltage detection period, a first initial voltage is detected using the first electrode, the second electrode, the third electrode, and the fourth electrode. A difference is calculated using the first initial voltage and the first detection voltage. The difference is compared with a predetermined threshold value to determine whether the object is approaching.

15. The driving method of the detection device according to claim 14, wherein, when the difference is greater than the predetermined threshold value, it is determined that the object is approaching, Based on the first detection voltage, during the second detection voltage detection period following the first detection voltage detection period, it is determined whether to interrupt the detection of the second detection voltage.

16. The driving method of the detection device according to claim 12, wherein, Among a group of detection electrodes adjacent to each other in the row direction and the column direction from the plurality of detection electrodes, a second group of detection electrodes adjacent to the first group of detection electrodes has: A fifth electrode arranged on the opposite side of the first electrode from the third electrode in the row direction; a sixth electrode arranged along the column direction with the fifth electrode and arranged on the opposite side of the second electrode from the fourth electrode in the column direction; a seventh electrode arranged on the opposite side of the third electrode from the fifth electrode in the row direction; And an eighth electrode arranged on the opposite side of the fourth electrode from the sixth electrode in the row direction and arranged along the column direction with the seventh electrode.

17. The driving method of the detection device according to claim 16, wherein, During the first detection voltage detection period, a fifth detection voltage is detected using the fifth electrode, the sixth electrode, the seventh electrode, and the eighth electrode. During the second detection voltage detection period, a sixth detection voltage is detected using at least the sixth electrode and the eighth electrode. During the third detection voltage detection period, a third detection voltage is detected using the third electrode, the fourth electrode, the fifth electrode, and the sixth electrode, and a seventh detection voltage is detected using at least the seventh electrode and the eighth electrode. During the fourth detection voltage detection period, a fourth detection voltage is detected using at least the fourth electrode and the sixth electrode, and an eighth detection voltage is detected using at least the eighth electrode. The position of the object is calculated using at least the first detection voltage and the fifth detection voltage.

18. The driving method of the detection device according to claim 17, wherein, The position of the object is calculated using the first detection voltage, the second detection voltage, the third detection voltage, the fourth detection voltage, the fifth detection voltage, the sixth detection voltage, the seventh detection voltage, and the eighth detection voltage.

19. The driving method of the detection device according to claim 17, wherein, During a first initial voltage detection period before the first detection voltage detection period, the first initial voltage is detected using the first electrode, the second electrode, the third electrode, and the fourth electrode, and a fifth initial voltage is detected using the fifth electrode, the sixth electrode, the seventh electrode, and the eighth electrode. A first difference is calculated using the first initial voltage and the first detection voltage. A fifth difference is calculated using the fifth initial voltage and the fifth detection voltage. The sum of the first difference and the fifth difference is compared with a predetermined threshold value to determine whether the object is approaching.

20. The driving method of the detection device according to claim 19. Wherein, When the sum value is greater than the predetermined threshold value, it is determined that the object is approaching. Based on the first detection voltage and the fifth detection voltage, during the second detection voltage detection period following the first detection voltage detection period, it is determined whether to interrupt the detection of the second detection voltage.

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