A radio frequency power device and electronic device

Abstract

The application provides a radio frequency power device and an electronic device, and relates to the technical field of radio frequency devices.The radio frequency power device comprises a substrate, an input balun, a first transistor, a supplementary capacitor and an output inductor on the substrate, a second transistor outside the substrate, the input balun is electrically connected with the control ends of the first transistor and the second transistor, and the input balun is used for receiving an enable signal, one end of the series connection of the first transistor and the second transistor is connected with a power supply and the supplementary capacitor, and the other end is grounded, the connection points of the first transistor and the second transistor are also electrically connected with the input balun, the supplementary capacitor and the output inductor, and the output inductor is used for connecting a load; wherein the output inductor, the supplementary capacitor, the parasitic capacitances of the first transistor and the second transistor and the parasitic capacitance of the substrate are used for realizing impedance matching together.The radio frequency power device and the electronic device provided by the application have the advantage of small internal matching size.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of radio frequency devices, in particular to a radio frequency power device and an electronic device. BACKGROUND

[0002] At present, most radio frequency power devices adopt ceramic or plastic package shells, and the chip is connected to the pin of the package shell through a bonding wire. First, the longer the bonding wire, the larger the equivalent parasitic parameters, and the greater the power loss on the bonding wire; second, the matching circuit needs to be designed on the matching link outside the packaged device, but the increase in the size of the matching circuit leads to larger output insertion loss.

[0003] In summary, the prior art has the problem of large size of the matching circuit of the radio frequency power device. SUMMARY

[0004] The present application aims to provide a radio frequency power device and an electronic device to solve the problem of large size of the matching circuit of the radio frequency power device in the prior art.

[0005] To achieve the above-mentioned purpose, the technical solutions adopted by the embodiments of the present application are as follows:

[0006] On the one hand, the present application provides a radio frequency power device, which comprises:

[0007] a substrate;

[0008] an input balun, a first transistor, a supplementary capacitor and an output inductor located on the substrate;

[0009] a second transistor located outside the substrate;

[0010] The input balun is electrically connected to the control end of the first transistor and the second transistor respectively, and the input balun is used to receive an enable signal.

[0011] One end of the series connection of the first transistor and the second transistor is connected to a power supply and the supplementary capacitor, and the other end is grounded. The connection points of the first transistor and the second transistor are also electrically connected to the input balun, the supplementary capacitor and the output inductor respectively, and the output inductor is used to connect a load; wherein,

[0012] The parasitic capacitances of the output inductor, the supplementary capacitor, the first transistor and the second transistor, and the parasitic capacitance of the substrate are collectively used to realize impedance matching.

[0013] Optionally, the substrate is arranged in the shape of a "concave" character, and the substrate is provided with a slot, the width of the slot is greater than the width of the second transistor, and the second transistor is installed at the slot of the substrate.

[0014] Optionally, the substrate comprises a first mounting area, a second mounting area and a third mounting area, the first mounting area, the second mounting area and the third mounting area are integrally formed, and the first mounting area and the third mounting area are respectively located on two sides of the second mounting area, and the second mounting area is located at the end of the slot.

[0015] The input balun is located in the first mounting area, the first transistor and the supplementary capacitor are located in the second mounting area, and the output inductor is located in the third mounting area.

[0016] Optionally, the substrate further comprises an interconnection area, the interconnection area is connected with the second mounting area, and the interconnection area is located on one side of the slot side end close to the third mounting area, a first metal layer is laid on the surface of the second mounting area and the interconnection area, and the pins of the second transistor are electrically connected with the first metal layer of the interconnection area.

[0017] Optionally, the first transistor and the second transistor are both MOS transistors, the drain of the first transistor is electrically connected with the supplementary capacitor, the source of the first transistor is electrically connected with the first metal layer of the second mounting area, the drain of the second transistor is electrically connected with the first metal layer of the interconnection area, and the source of the second transistor is grounded.

[0018] Optionally, the input balun is electrically connected with the control ends of the first transistor and the second transistor through a first microstrip line and a second microstrip line respectively, the source of the first transistor is electrically connected with the supplementary capacitor through a third microstrip line, the source of the second transistor is electrically connected with the first metal layer of the interconnection area through a fourth microstrip line, and the first microstrip line, the second microstrip line, the third microstrip line and the fourth microstrip line are used for impedance matching.

[0019] Optionally, the second mounting area is located on the front surface of the substrate, a first metal layer is laid on the second mounting area, and a second metal layer is laid on the back surface of the substrate.

[0020] Optionally, the radio frequency power device further comprises a DC blocking capacitor, one end of the DC blocking capacitor is electrically connected with the output inductor, and the other end of the DC blocking capacitor is used for connecting a load.

[0021] In another aspect, the embodiments of the present application also provide an electronic device, which comprises the radio frequency power device described above.

[0022] Optionally, the electronic device further comprises an external impedance matching network, the external impedance matching network is electrically connected with the output inductor, and the external impedance matching network is used for connecting a load.

[0023] Compared with the prior art, the present application has the following beneficial effects:

[0024] The present application provides a radio frequency power device and an electronic device, the radio frequency power device comprising a substrate, an input balun, a first transistor, a supplementary capacitor and an output inductor located on the substrate, a second transistor located outside the substrate, the input balun being electrically connected to the control ends of the first transistor and the second transistor respectively, and the input balun being used for receiving an enable signal, one end of the first transistor and the second transistor in series being connected to a power supply and the supplementary capacitor respectively, and the other end being grounded, the connection points of the first transistor and the second transistor also being electrically connected to the input balun, the supplementary capacitor and the output inductor respectively, and the output inductor being used for connecting a load; wherein the output inductor, the supplementary capacitor, the parasitic capacitances of the first transistor and the second transistor and the parasitic capacitance of the substrate are collectively used for realizing impedance matching. On the one hand, since the impedance matching circuit of the present application is arranged inside the radio frequency power device, internal matching is realized, so that an external matching circuit can be unnecessary, and the overall volume is reduced. On the other hand, since the present application utilizes the parasitic capacitances of the transistor and the substrate to participate in matching, the internal matching size can also be reduced on the basis of improving the performance of the device, and thus the volume of the radio frequency power device is further reduced.

[0025] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the following preferred embodiments are described in detail below, and the accompanying drawings are described as follows. BRIEF DESCRIPTION OF DRAWINGS

[0026] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can also be obtained without creative labor on the basis of these drawings.

[0027] Figure 1 The circuit schematic diagram of the radio frequency power device provided by the embodiments of the present application is shown.

[0028] Figure 2 The equivalent circuit schematic diagram of the radio frequency power device provided by the embodiments of the present application is shown.

[0029] Figure 3 The structure schematic diagram of the substrate provided by the embodiments of the present application is shown.

[0030] Figure 4 The partition schematic diagram of the substrate provided by the embodiments of the present application is shown.

[0031] Figure 5 The exemplary layout arrangement schematic diagram of the radio frequency power device provided by the embodiments of the present application is shown.

[0032] Figure 6 The circuit schematic of the electronic device provided by the embodiment of the present application is shown in the figure.

[0033] In the figure:

[0034] 100 - radio frequency power device; 110 - input balun; 120 - first transistor; 130 - second transistor; 140 - complementary capacitor; 150 - output inductor; 160 - DC blocking capacitor; 170 - substrate; 171 - first mounting area; 172 - second mounting area; 173 - third mounting area; 174 - interconnection area; 180 - first microstrip line; 190 - second microstrip line; 200 - third microstrip line; 210 - fourth microstrip line; 220 - external impedance matching network. DETAILED DESCRIPTION

[0035] In order to make the objectives, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the accompanying drawings can be arranged and designed in various different configurations.

[0036] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative labor are within the scope of protection of the present application.

[0037] It should be noted that: similar reference numerals and letters represent similar items in the following drawings, therefore, once an item is defined in one drawing, it does not need to be further defined and explained in the subsequent drawings. Meanwhile, in the description of the present application, the terms "first", "second", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0038] It should be noted that, in the present document, the terms such as first and second, etc. are merely used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Also, the terms "include", "contain" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not explicitly listed or inherent to such process, method, article or device. Without more limitations, the element defined by the statement "including a" does not exclude the presence of additional identical elements in the process, method, article or device including the element.

[0039] In the description of the present application, it should be noted that the terms "upper", "lower", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the product of the application is usually placed, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application.

[0040] In the description of the present application, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set", "connected" should be understood broadly, for example, it can be fixedly connected, or detachably connected, or integrally connected; it can be mechanically connected, or electrically connected; it can be directly connected, or indirectly connected through an intermediate medium, or it can be the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0041] Some embodiments of the present application will be described in detail below with reference to the accompanying drawings. The following examples and features in the examples can be combined with each other without conflict.

[0042] As described in the background, in the prior art, radio frequency power devices generally use external matching circuits to achieve impedance matching, resulting in a large overall circuit size.

[0043] Therefore, the present application provides a radio frequency power device, which reduces the overall size of the device by internal matching and utilizing the substrate parasitic capacitance to participate in matching.

[0044] The radio frequency power device provided by the present application will be described exemplarily as follows:

[0045] As an optional implementation, please refer to Figure 1The radio frequency power device 100 comprises a substrate 170, an input balun 110, a first transistor 120, a supplementary capacitor 140 and an output inductor 150 located on the substrate 170, a second transistor 130 located outside the substrate 170, the input balun 110 is electrically connected to control ends of the first transistor 120 and the second transistor 130 respectively, and the input balun 110 is used for receiving an enable signal, one end of the first transistor 120 and the second transistor 130 in series is connected to a power supply and the supplementary capacitor 140 respectively, and the other end is grounded, and the connection points of the first transistor 120 and the second transistor 130 are also electrically connected to the input balun 110, the supplementary capacitor 140 and the output inductor 150 respectively, and the output inductor 150 is used for connecting a load; wherein the output inductor 150, the supplementary capacitor 140, the parasitic capacitances of the first transistor 120 and the second transistor 130 and the parasitic capacitance of the substrate 170 are used together to realize impedance matching.

[0046] wherein, Figure 1 The equivalent circuit of the circuit structure of the radio frequency power device 100 is shown in Figure 2 Wherein, the first transistor 120 and the second transistor 130 are both realized by MOS tubes, of course, in other embodiments, other transistors such as IGBT tubes can also be used, which are not limited here.

[0047] From the circuit architecture, if the circuit architecture of the D class power amplifier is used for power transmission, the cutoff frequency of the transistor has a very high requirement, the greater the output power, the greater the influence of the output parasitic capacitance on the efficiency due to the charging and discharging; therefore, the influence of the transistor parasitic capacitance is strengthened with the increase of the frequency, which limits the application in higher frequency. If the B class power amplifier is used, the harmonic power loss introduced by the nonlinearity of the radio frequency needs to be considered, which will further deteriorate the efficiency and cause the transmission power to deteriorate synchronously, so the second harmonic control is needed to improve the efficiency; the theoretical highest efficiency will not exceed 78.5%, and with the increase of power transmission, a larger drain voltage is needed, which has a higher requirement on the voltage threshold of the die.

[0048] In addition, the traditional way to improve the efficiency is to increase the power delivered to the fundamental wave while keeping the direct current power consumption unchanged, or to reduce the sum of the power loss and the second and third harmonic power of the device.

[0049] In this application, in the circuit architecture, the influence of the parasitic capacitance and the cutoff frequency of the D class power amplifier is considered, and the circuit enabling advantage of the E class power amplifier is combined to reduce the threshold of the breakdown voltage of the transistor, and the D class power amplifier architecture is used, and the additional supplementary capacitor 140 based on the parasitic capacitance of the E class power amplifier is used to participate in the circuit charging and discharging to improve the cutoff frequency and reduce the parasitic loss.

[0050] The application reduces the threshold of the transistor breakdown voltage at the same output power through two series-connected transistors in the overall circuit architecture, and utilizes the extracted parasitic capacitance of the transistor output and the supplementary capacitance 140, the output matching inductance and the output LC filter to realize waveform shaping, reduce the influence of the parasitic capacitance on the performance in high-frequency power output, and reduce the complexity of the output matching, while reducing the overlapping area space between the voltage and the current, thereby improving the maximum output efficiency, so that the overall output efficiency reaches more than 90%.

[0051] Furthermore, through the internal matching mode, the parasitic capacitance of the substrate 170 also participates in impedance matching on the basis of reducing the overall volume, thereby converting the substrate parasitic capacitance which is originally not conducive to the performance of the radio frequency power device 100 into a beneficial influence, reducing the parasitic capacitance loss, and at the same time, the capacitance value of the supplementary capacitance 140 can be reduced, thereby reducing the volume of the supplementary capacitance 140 and reducing the overall internal matching size.

[0052] Please continue to refer to Figure 1 The input balun 110 provided by the application is formed by bonding wires and microstrip lines, in the diagram, the dashed line represents the bonding wire, and the solid line represents the microstrip line, at the same time, after the bonding wire cooperates with the microstrip line at the input end, the input balun 110 is realized by the center surface ferrite magnet rod of the bonding wire and the microstrip line, so as to improve the inductance of the input balun 110, achieve the purpose of improving the size of the input balun 110, that is, a smaller volume of the input balun 110 can obtain a larger inductance. The coupling degree and the impedance change ratio of the input balun 110 are determined by the inductance, the input enable signal is output to the two transistors through the balun to realize power amplifier switching, and by adjusting the relative position of the bonding wire, the overlapping area and the spacing of the two coils can be changed to change the coupling coefficient.

[0053] Similarly, the output inductance 150 is also composed of bonding wires and microstrip lines, in order to improve the inductance of the output inductance 150, the center of the bonding wire and the microstrip line of the output inductance 150 can also pass through the ferrite magnet rod to improve the size.

[0054] Among them, the first transistor 120 and the second transistor 130 need to be used as a radio frequency switch, and the enable of the input signal enables the first transistor 120 and the second transistor 130 to realize the switching of the on and off states, so the cutoff frequency requirement of the transistor itself is very high, therefore, the GaN transistor is selected in the application, which can guarantee a higher cutoff frequency and a good gain performance at high frequency. Secondly, the bonding wire and the winding inductance are used to realize the output, which can greatly reduce the balance between the quality factor and the wideband characteristics under the condition of guaranteeing the quality factor.

[0055] At the same time, please continue to refer to Figure 1 , Figure 1The middle C1 represents an equivalent parasitic capacitance (no actual capacitance in actual circuit connection) including the parasitic capacitances of the first transistor 120, the second transistor 130 and the substrate 170. Figure 1 The middle C2 represents the supplementary capacitance 140. It is to be noted that, in the process of impedance matching, if the parasitic capacitance can meet the requirement of impedance matching, the supplementary capacitance 140 is not needed; if the parasitic capacitance cannot meet the requirement of impedance matching, the required capacitance value is supplemented by the supplementary capacitance 140.

[0056] It is to be further noted that the supplementary capacitance 140 provided in the present application is a voltage-controlled capacitance, which can actually dynamically adjust the capacitance value through voltage, thereby ensuring different frequency points and compatibility of different batches of transistors.

[0057] In addition, in the process of internal matching, the first transistor 120 and the second transistor 130 are connected in series, and a substrate 170 is needed to realize the connection, that is, the source electrode of the first transistor 120 is attached to the substrate 170, and then connected to the drain electrode of the second transistor 130 through the bonding wire of the substrate 170. The substrate 170 will inevitably introduce parasitic capacitance due to its size, so the present application uses the parasitic capacitance of the substrate 170 to equivalently replace the supplementary capacitance 140 needed in the original circuit, thereby realizing the reduction of size and cost.

[0058] On this basis, in order to facilitate the connection between the first transistor 120 and the second transistor 130, the first transistor 120 is arranged on the substrate 170, and the second transistor 130 is arranged outside the substrate 170 and connected through the bonding wire.

[0059] As an implementation manner, please refer to Figure 3 The substrate 170 is arranged in a "concave" shape, and the substrate 170 is provided with a slot, the width of the slot is greater than the width of the second transistor 130, and the second transistor 130 is installed at the slot of the substrate 170. In order to facilitate subsequent description, the end position of the slot is named as the end, and the position on both sides of the slot is named as the side end. By installing the second transistor 130 at the slot of the substrate 170, on the one hand, the distance between the first transistor 120 and the second transistor 130 can be relatively short, so that the connection between the first transistor 120 and the second transistor 130 is more convenient. On the other hand, in combination with Figure 2 It can be known that the first transistor 120 needs to be grounded, and since the bottom substrate 170 of the second transistor 130 is shielded, the grounding is more convenient.

[0060] In addition, since the substrate 170 is arranged in a "concave" shape, it is not a complete panel, which can achieve the effect of reducing the use of materials, thereby reducing the cost of the device.

[0061] In an implementation manner, please refer toFigure 4 The substrate 170 comprises a first mounting area 171, a second mounting area 172 and a third mounting area 173, which are integrally formed, and the first mounting area 171 and the third mounting area 173 are respectively located at two sides of the second mounting area 172, and the second mounting area 172 is located at the end of the slot; wherein the input balun 110 is located at the first mounting area 171, the first transistor 120 and the supplementary capacitor 140 are located at the second mounting area 172, and the output inductor 150 is located at the third mounting area 173.

[0062] Meanwhile, the substrate 170 further comprises an interconnection area 174, which is connected with the second mounting area 172. Figure 5 As shown in the figure, the interconnection area 174 is connected with the second mounting area 172, and the interconnection area 174 is located at one side of the slot side end close to the third mounting area 173, and the surface of the interconnection area 174 and the second mounting area 172 is paved with a first metal layer, and the pin of the second transistor 130 is electrically connected with the first metal layer of the interconnection area 174.

[0063] On this basis, the first transistor 120 and the second transistor 130 are both MOS tubes, the drain of the first transistor 120 is electrically connected with the supplementary capacitor 140, the source of the first transistor 120 is electrically connected with the first metal layer of the second mounting area 172, the drain of the second transistor 130 is electrically connected with the first metal layer of the interconnection area 174, and the source of the second transistor 130 is grounded.

[0064] It should be noted that through the above arrangement, on the basis of ensuring that the substrate 170 is low in cost and the second transistor 130 can be more conveniently grounded, the source of the first transistor 120 only needs to be connected with the first metal layer on the surface of the substrate 170, and the drain of the second transistor 130 is directly connected with the metal layer of the interconnection area 174 closest to it, so that the electrical connection between the source of the first transistor 120 and the drain of the second transistor 130 is ensured. In addition, the shortest bonding wire can be used to realize the connection between the first transistor 120 and the second transistor 130, thereby saving the cost.

[0065] In one implementation manner, the second transistor 130 is flush with the substrate 170, which facilitates the bonding between the second transistor 130 and the interconnection area 174.

[0066] The substrate 170 includes a front surface and a back surface, the second mounting area 172 is located on the front surface of the substrate 170, the first metal layer is arranged on the second mounting area 172 and the interconnection area 174, and the second metal layer is arranged on the back surface of the substrate 170. It can be understood that in this way, the first metal layer and the second metal layer can be used to form a capacitor, thereby expanding the capacitance of the parasitic capacitance of the substrate 170, so that the capacitance of the supplementary capacitor 140 can be smaller, that is, a smaller supplementary capacitor 140 can be selected to complete the device matching, and the device volume is further reduced.

[0067] In addition, the input balun 110 is electrically connected to the control end of the first transistor 120 and the second transistor 130 through the first microstrip line 180 and the second microstrip line 190 respectively, the source of the first transistor 120 is electrically connected to the supplementary capacitor 140 through the third microstrip line 200, the source of the second transistor 130 is electrically connected to the first metal layer of the interconnection area 174 through the fourth microstrip line 210, and the first microstrip line 180, the second microstrip line 190, the third microstrip line 200 and the fourth microstrip line 210 are used for participating in impedance matching.

[0068] The first microstrip line 180, the second microstrip line 190, the third microstrip line 200 and the fourth microstrip line 210 are equivalent to Figure 1 inductances L1-L4 respectively, and the first microstrip line 180, the second microstrip line 190, the third microstrip line 200 and the fourth microstrip line 210 are used for participating in impedance matching, so as to further reduce the size of impedance matching.

[0069] As an implementation manner, the radio frequency power device 100 further includes a DC blocking capacitor 160, one end of the DC blocking capacitor 160 is electrically connected to the output inductor 150, and the other end of the DC blocking capacitor 160 is used for connecting a load. The DC blocking capacitor 160 is used for isolating direct current, and of course, the DC blocking capacitor 160 can also participate in impedance matching.

[0070] Based on the above implementation manner, the application further provides an electronic device, which includes the radio frequency power device 100 described above.

[0071] In an implementation manner, referring to Figure 6 , the electronic device further includes an external impedance matching network 220, the external impedance matching network 220 is electrically connected to the output inductor 150, and the external impedance matching network 220 is used for connecting a load. The final output impedance Zload of the radio frequency power device 100 is an efficient impedance combining point, and the impedance can be configured to 50 ohm through the external impedance matching network 220. In an implementation manner, the external impedance matching network 220 can be a Pi-type network.

[0072] In summary, the application provides a radio frequency power device and an electronic device, the radio frequency power device comprising a substrate, an input balun, a first transistor, a supplementary capacitor and an output inductor on the substrate, a second transistor outside the substrate, the input balun being electrically connected to control ends of the first transistor and the second transistor respectively, and the input balun being configured to receive an enable signal, the first transistor and the second transistor being connected in series at one end to a power supply and the supplementary capacitor, and being grounded at the other end, and the connection points of the first transistor and the second transistor being electrically connected to the input balun, the supplementary capacitor and the output inductor respectively, and the output inductor being configured to connect to a load; wherein the output inductor, the supplementary capacitor, the parasitic capacitances of the first transistor and the second transistor and the parasitic capacitance of the substrate are collectively configured to realize impedance matching. On the one hand, since the impedance matching circuit of the application is arranged inside the radio frequency power device, internal matching is realized, so that an external matching circuit does not need to be built, and the overall volume is reduced. On the other hand, since the application utilizes the parasitic capacitances of the transistor and the substrate to participate in matching, the device performance is improved, and the internal matching size is also reduced, thereby further reducing the volume of the radio frequency power device.

[0073] The above only describes preferred embodiments of the application and is not intended to limit the application. The application can have various modifications and changes for those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the application shall be included in the protection scope of the application.

[0074] It is obvious for those skilled in the art that the application is not limited to the details of the above exemplary embodiments, and the application can be implemented in other specific forms without departing from the spirit or essential characteristics of the application. Therefore, the embodiments should be regarded as exemplary and non-limiting, and the scope of the application is defined by the appended claims rather than the above description, and all changes falling within the meaning and scope of the equivalent elements of the claims are intended to be included in the application. Any reference signs in the claims should not be regarded as limiting the claims.

Claims

1. A radio frequency power device, characterized by, The radio frequency power device comprises: a substrate; an input balun, a first transistor, a supplementary capacitor and an output inductor located on the substrate; a second transistor located outside the substrate; the input balun is electrically connected to the control terminals of the first transistor and the second transistor respectively, and the input balun is used for receiving an enable signal; one end of the first transistor and the second transistor in series is connected to a power supply and the supplementary capacitor respectively, and the other end is grounded, and the connection points of the first transistor and the second transistor are also electrically connected to the input balun, the supplementary capacitor and the output inductor respectively, and the output inductor is used for connecting a load; wherein, the output inductor, the supplementary capacitor, the parasitic capacitances of the first transistor and the second transistor and the parasitic capacitance of the substrate are collectively used for realizing impedance matching.

2. The radio frequency power device of claim 1, wherein, The substrate is arranged in a "concave" shape, the substrate is provided with a notch, the width of the notch is greater than the width of the second transistor, and the second transistor is installed at the notch of the substrate.

3. The radio frequency power device of claim 2, wherein, The substrate comprises a first mounting area, a second mounting area and a third mounting area, the first mounting area, the second mounting area and the third mounting area are integrally formed, and the first mounting area and the third mounting area are respectively located on both sides of the second mounting area, and the second mounting area is located at the end of the notch; wherein, the input balun is located in the first mounting area, the first transistor and the supplementary capacitor are located in the second mounting area, and the output inductor is located in the third mounting area.

4. The radio frequency power device of claim 3, wherein, The substrate further comprises an interconnection area, the interconnection area is connected to the second mounting area, and the interconnection area is located on one side of the side end of the notch close to the third mounting area, and a first metal layer is laid on the surface of the interconnection area and the second mounting area, and the pins of the second transistor are electrically connected to the first metal layer of the interconnection area.

5. The radio frequency power device of claim 4, wherein, The first transistor and the second transistor are both MOS transistors, the drain of the first transistor is electrically connected to the supplementary capacitor, the source of the first transistor is electrically connected to the first metal layer of the second mounting area, the drain of the second transistor is electrically connected to the first metal layer of the interconnection area, and the source of the second transistor is grounded.

6. The radio frequency power device of claim 5, wherein, The input balun is electrically connected to the control terminals of the first transistor and the second transistor through a first microstrip line and a second microstrip line respectively, the source of the first transistor is electrically connected to the supplementary capacitor through a third microstrip line, and the source of the second transistor is electrically connected to the first metal layer of the interconnection area through a fourth microstrip line, and the first microstrip line, the second microstrip line, the third microstrip line and the fourth microstrip line are used for participating in impedance matching.

7. The radio frequency power device of claim 3, wherein, The second mounting area is located on the front surface of the substrate, a first metal layer is laid on the second mounting area, and a second metal layer is laid on the back surface of the substrate.

8. The radio frequency power device of claim 1, wherein, The radio frequency power device further comprises a DC blocking capacitor, one end of the DC blocking capacitor is electrically connected to the output inductor, and the other end of the DC blocking capacitor is used for connecting a load.

9. An electronic device, comprising: The electronic device comprises the radio frequency power device according to any one of claims 1 to 8.

10. The electronic device of claim 9, wherein, The electronic device also includes an external impedance matching network electrically connected to the output inductor, and the external impedance matching network is used to connect a load.

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