Devices for generating plasma and their control methods

Abstract

According to one embodiment of this specification, an apparatus for generating plasma and a control method thereof are provided. The apparatus includes: a chamber configured to provide a plasma generation space; an antenna module disposed adjacent to the chamber and configured to be connected to a first power source and generate an induced electric field in the chamber; electrodes disposed adjacent to the chamber and configured to be connected to a second power source and assist in plasma generation; a sensor configured to acquire sensing information related to the state of the plasma; and a controller configured to control the first power source and the second power source.

Description

Technical Field

[0001] This disclosure relates to an element for generating plasma and a method for controlling said element. More specifically, this disclosure relates to an element for generating plasma and a method for controlling said element, said element and method assisting in the initial discharge of the plasma. Background Technology

[0002] Plasma discharge is used in many industrial and scientific applications, and it generates active substances for various gases in various industrial fields (such as semiconductor wafer processing) or achieves the treatment of by-products generated in industrial processes.

[0003] Plasma sources used for plasma discharge primarily employ inductively coupled plasma (ICP) or capacitively coupled plasma (CCP) methods. The ICP method involves applying radio frequency (RF) power to a coil to create an induced electric field, and then using this induced electric field to perform plasma discharge.

[0004] Methods for initial plasma discharge (ignition) include using an igniter or inputting additional power. However, a problem exists that components can be damaged because ignition-assisted methods do not take into account the plasma's presence and impurities are introduced into the generated reactive species. Therefore, there is a need to develop methods to assist in the initial plasma discharge while minimizing damage to components and impurity generation.

[0005] The foregoing is intended only to help understand the background of this disclosure and is not intended to imply that this disclosure falls within the scope of related technologies known to those skilled in the art. Summary of the Invention

[0006] Technical issues

[0007] This disclosure aims to provide an element for generating plasma or a method for controlling said element, said element and method assisting in the initial discharge of plasma.

[0008] In addition, this disclosure aims to provide an element for generating plasma or a method for controlling said element, said element and method minimizing damage to said element caused by the initial discharge of plasma.

[0009] The technical problems to be solved by this disclosure are not limited to those described above, and those skilled in the art will clearly understand other technical problems not mentioned through this disclosure and the accompanying drawings.

[0010] Technical solutions

[0011] According to one embodiment of this specification, an apparatus for generating plasma can be provided, the apparatus comprising: a chamber configured to provide a plasma generation space; an antenna module disposed adjacent to the chamber and configured to be connected to a first power source and generate an induced electric field in the chamber; electrodes disposed adjacent to the chamber and configured to be connected to a second power source and assist in generating the plasma; a sensor configured to acquire sensing information related to the state of the plasma; and a controller configured to control the first power source and the second power source, wherein the controller is further configured to: apply an RF voltage to a load including the antenna module via the first power source from a first time point; acquire the sensing information related to the state of the plasma based on the applied RF voltage; control the second power source based on the sensing information from a second time point, the second time point being a predetermined time after the first time point, wherein when the sensing information at the second time point does not meet a predetermined condition, the controller is further configured to apply a pulse voltage to the electrodes via the second power source, and when the sensing information at the second time point meets the predetermined condition, the controller is further configured not to apply the pulse voltage to the electrodes via the second power source.

[0012] According to one embodiment of this specification, a method for controlling a plasma generating apparatus is provided, wherein the plasma generating apparatus includes: a chamber providing a plasma generation space; an antenna module disposed adjacent to the chamber and configured to be connected to a first power source and generate an induced electric field in the chamber; electrodes disposed adjacent to the chamber and configured to be connected to a second power source and assist in the generation of the plasma; a sensor configured to obtain sensing information related to the state of the plasma; and a controller configured to control the first power source and the second power source, the method comprising: applying an RF voltage by the controller to a load including the antenna module via the first power source from a first time point; obtaining the sensing information related to the state of the plasma by the controller based on the applied RF voltage; and controlling the second power source by the controller based on the sensing information from a second time point, the second time point being a predetermined time after the first time point, wherein controlling the second power source by the controller includes: not applying a pulse voltage to the electrodes via the second power source when the sensing information at the second time point meets a predetermined condition; and applying the pulse voltage to the electrodes via the second power source when the sensing information at the second time point does not meet the predetermined condition.

[0013] The technical solutions to the problems described in this specification are not limited to the solutions described above, and those skilled in the art should clearly understand other technical solutions not described herein through this specification and the accompanying drawings.

[0014] Beneficial effects

[0015] According to this disclosure, an element for generating plasma using an initial discharge of rapidly achieved plasma can be provided.

[0016] According to this disclosure, an element for generating plasma can be provided, which suppresses the generation of impurities due to the initial discharge of the auxiliary plasma.

[0017] The effects disclosed herein are not limited to those described above, and those skilled in the art should clearly understand, through the disclosure and accompanying drawings, other effects not described herein. Attached Figure Description

[0018] Figure 1 This is a diagram illustrating a plasma generation system according to an embodiment of this disclosure.

[0019] Figure 2 This is a diagram illustrating a plasma generation system according to an embodiment of this disclosure.

[0020] Figure 3 This is a diagram illustrating elements for generating plasma according to an embodiment of this disclosure.

[0021] Figure 4 This is a diagram illustrating a direct current (DC) electrode according to an embodiment of this disclosure.

[0022] Figure 5 This is a diagram illustrating a DC power supply according to an embodiment of this disclosure.

[0023] Figure 6 This is a diagram illustrating the DC electrodes according to an embodiment of this disclosure.

[0024] Figure 7 This is a diagram illustrating a DC power supply according to an embodiment of this disclosure.

[0025] Figure 8 This is a diagram illustrating an antenna module according to an embodiment of this disclosure.

[0026] Figure 9 This is a diagram illustrating the operation of an antenna module according to an embodiment of this disclosure.

[0027] Figure 10 This is a diagram illustrating an antenna module according to an embodiment of this disclosure.

[0028] Figure 11This is a diagram illustrating the operation of an antenna module according to an embodiment of this disclosure.

[0029] Figure 12 This is a diagram illustrating an antenna module according to an embodiment of this disclosure.

[0030] Figure 13 This is a diagram illustrating an RF power supply according to an embodiment of this disclosure.

[0031] Figure 14 This is a diagram illustrating a plasma generation process according to an embodiment of this disclosure.

[0032] Figure 15 This is a diagram illustrating elements for generating plasma according to an embodiment of this disclosure.

[0033] Figure 16 This is a diagram illustrating a plasma generation process according to an embodiment of this disclosure.

[0034] Figure 17 This is a diagram illustrating a plasma generation process according to an embodiment of this disclosure.

[0035] Figure 18 This is a diagram illustrating the output current and high-voltage pulse output of a method for controlling an element used to generate plasma according to an embodiment of this disclosure.

[0036] Figure 19 This is a diagram illustrating a plasma generation process according to an embodiment of this disclosure.

[0037] Figure 20 This is a diagram illustrating a plasma generation process according to an embodiment of this disclosure.

[0038] Figure 21 This is a diagram illustrating the output current and high-voltage pulse output of a method for controlling an element used to generate plasma according to an embodiment of this disclosure.

[0039] Figure 22 This is a diagram illustrating a plasma generation process according to an embodiment of this disclosure.

[0040] Figure 23 This is a diagram illustrating a plasma generation process according to an embodiment of this disclosure.

[0041] Figure 24 This is a diagram illustrating the output current and high-voltage pulse output of a method for controlling an element used to generate plasma according to an embodiment of this disclosure.

[0042] Figure 25 This is a diagram illustrating a plasma generation process according to an embodiment of this disclosure.

[0043] Figure 26This is a diagram illustrating a plasma generation process according to an embodiment of this disclosure.

[0044] Figure 27 This is a diagram illustrating the output current and high-voltage pulse output of a method for controlling an element used to generate plasma according to an embodiment of this disclosure.

[0045] Figure 28 This is a diagram illustrating elements for generating plasma according to an embodiment of this disclosure.

[0046] Figure 29 This is a diagram illustrating elements for generating plasma according to an embodiment of this disclosure.

[0047] Figure 30 This is a diagram illustrating a power supply signal and a control signal for a high-voltage pulse that is varied based on a power supply signal in an element for generating plasma according to an embodiment of this disclosure, the element including a sensor.

[0048] Figure 31 This is a diagram illustrating elements for generating plasma according to an embodiment of this disclosure.

[0049] Figure 32 This is a diagram illustrating elements for generating plasma according to an embodiment of this disclosure.

[0050] Figure 33 This is a diagram illustrating elements for generating plasma according to an embodiment of this disclosure.

[0051] Figure 34 This is a diagram illustrating elements for generating plasma according to several embodiments of the present disclosure.

[0052] Figure 35 This is a diagram illustrating a power supply signal and a control signal for a high-voltage pulse that is varied based on a power supply signal in an element for generating plasma according to an embodiment of this disclosure, the element including a sensor. Detailed Implementation

[0053] According to one embodiment of this specification, an apparatus for generating plasma can be provided, the apparatus comprising: a chamber configured to provide a plasma generation space; an antenna module disposed adjacent to the chamber and configured to be connected to a first power source and generate an induced electric field in the chamber; electrodes disposed adjacent to the chamber and configured to be connected to a second power source and assist in generating the plasma; a sensor configured to acquire sensing information related to the state of the plasma; and a controller configured to control the first power source and the second power source, wherein the controller is further configured to: apply an RF voltage to a load including the antenna module via the first power source from a first time point; acquire the sensing information related to the state of the plasma based on the applied RF voltage; control the second power source based on the sensing information from a second time point, the second time point being a predetermined time after the first time point, wherein when the sensing information at the second time point does not meet a predetermined condition, the controller is further configured to apply a pulse voltage to the electrodes via the second power source, and when the sensing information at the second time point meets the predetermined condition, the controller is further configured not to apply the pulse voltage to the electrodes via the second power source.

[0054] According to one embodiment of this specification, the controller can be configured to apply the pulse voltage to the electrode via the second power supply when the sensing information indicates that no plasma is generated in the chamber, and not apply the pulse voltage to the electrode when the sensing information indicates that the plasma is generated in the chamber.

[0055] According to one embodiment of this specification, the sensing information obtained by the sensor can indicate the power supplied to the load via the first power source.

[0056] According to one embodiment of this specification, when the sensing information at the second time point indicates that the power supplied to the load is less than the reference power supply, the controller may be configured to apply the pulse voltage to the electrode, and when the sensing information at the second time point indicates that the power supplied to the load is greater than or equal to the reference power supply, the controller may be configured not to apply the pulse voltage to the electrode.

[0057] According to one embodiment of this specification, the first power supply may include a DC power supply and an inverter configured to convert the DC power supply from the DC power supply into an RF power supply, wherein the sensor is placed between the DC power supply and the inverter and configured to obtain a first voltage output from the DC power supply and a first current output from the DC power supply, and wherein the controller is configured to apply the pulse voltage to the electrode based on the power supply supplied to the load, the power supply being determined based on the first voltage and the first current.

[0058] According to one embodiment of this specification, the sensor may be configured to obtain the sensing information based on a second current flowing through the antenna module.

[0059] According to one embodiment of this specification, when the phase difference between the second current and the RF voltage at the second time point does not meet the predetermined condition, the controller may be configured to apply the pulse voltage to the electrode, and when the phase difference between the second current and the RF voltage at the second time point meets the predetermined condition, the controller may be configured not to apply the pulse voltage to the electrode.

[0060] According to one embodiment of this specification, when the sensing information does not meet the predetermined condition at the second time point, the controller may be configured to apply a first pulse voltage to the electrode via the second power supply, such that the electrode provides a first power supply; and when the sensing information does not meet the predetermined condition at a third time point after the second time point, the controller may be configured to apply a second pulse voltage to the electrode, such that the electrode provides a second power supply greater than the first power supply.

[0061] According to one embodiment of this specification, when the sensing information does not meet the predetermined condition at the second time point, the controller may be configured to apply a first pulse voltage having a first voltage value to the electrode via the second power supply, and when the sensing information does not meet the predetermined condition at a third time point after the second time point, the controller may be configured to apply a second pulse voltage to the electrode via the second power supply, the second pulse voltage having a second voltage value larger than the first voltage value.

[0062] According to one embodiment of this specification, when the sensing information does not meet the predetermined condition at the second time point, the controller may be configured to apply the pulse voltage to the electrode during a first time period, and when the sensing information does not meet the predetermined condition at a third time point after the first time point from the second time point, the controller may be configured to apply the pulse voltage during a second time period shorter than the first time period.

[0063] According to one embodiment of this specification, the controller may be configured to apply an RF voltage of a first magnitude to the load via the first power supply from the first time point, and to apply an RF voltage of a second magnitude greater than the first magnitude to the load when the sensing information does not satisfy the predetermined condition at a third time point after the first time point and before the second time point.

[0064] According to one embodiment of this specification, when the sensing information does not meet the predetermined condition at the second time point, the controller may be configured to apply the pulse voltage of the first voltage value to the electrode via the second power supply, and when the sensing information meets the predetermined condition at a third time point after the second time point, the controller may be configured to stop applying the pulse voltage.

[0065] According to one embodiment of this specification, a method for controlling a plasma generating apparatus is provided, wherein the plasma generating apparatus includes: a chamber providing a plasma generation space; an antenna module disposed adjacent to the chamber and configured to be connected to a first power source and generate an induced electric field in the chamber; electrodes disposed adjacent to the chamber and configured to be connected to a second power source and assist in the generation of the plasma; a sensor configured to obtain sensing information related to the state of the plasma; and a controller configured to control the first power source and the second power source, the method comprising: applying an RF voltage by the controller to a load including the antenna module via the first power source from a first time point; obtaining the sensing information related to the state of the plasma by the controller based on the applied RF voltage; and controlling the second power source by the controller based on the sensing information from a second time point, the second time point being a predetermined time after the first time point, wherein controlling the second power source by the controller includes: not applying a pulse voltage to the electrodes via the second power source when the sensing information at the second time point meets a predetermined condition; and applying the pulse voltage to the electrodes via the second power source when the sensing information at the second time point does not meet the predetermined condition.

[0066] According to one embodiment of this specification, the control of the second power supply by the controller may include: applying the pulse voltage to the electrode via the second power supply when the sensing information indicates that no plasma is generated in the chamber; and not applying the pulse voltage to the electrode when the sensing information indicates that the plasma is generated in the chamber.

[0067] According to one embodiment of this specification, the sensing information obtained by the sensor can indicate the power supplied to the load via the first power source.

[0068] According to one embodiment of this specification, the control of the second power supply by the controller may include: applying the pulse voltage to the electrode when the sensing information at the second time point indicates that the power supplied to the load is less than the reference power supply, and not applying the pulse voltage to the electrode when the sensing information at the second time point indicates that the power supplied to the load is greater than or equal to the reference power supply.

[0069] According to one embodiment of this specification, the first power supply may include a DC power supply and an inverter configured to convert the DC power supply from the DC power supply into an RF power supply, wherein the sensor is placed between the DC power supply and the inverter and configured to obtain a first voltage output from the DC power supply and a first current output from the DC power supply, and wherein the controller controlling the second power supply includes controlling the second power supply based on the power supplied to the load, the power supply being determined based on the first voltage and the first current.

[0070] According to one embodiment of this specification, the sensor may be configured to obtain the sensing information based on a second current flowing through the antenna module.

[0071] According to one embodiment of this specification, the control of the second power supply by the controller may include: applying the pulse voltage to the electrode when the phase difference between the second current and the RF voltage at the second time point does not meet the predetermined condition, and not applying the pulse voltage to the electrode when the phase difference between the second current and the RF voltage at the second time point meets the predetermined condition.

[0072] According to one embodiment of this specification, the control of the second power supply by the controller may include: when the sensing information does not meet the predetermined condition at the second time point, applying a first pulse voltage to the electrode via the second power supply to make the electrode provide a first power supply; and when the sensing information does not meet the predetermined condition at a third time point after the second time point, applying a second pulse voltage to the electrode to make the electrode provide a second power supply greater than the first power supply.

[0073] According to one embodiment of this specification, the control of the second power supply by the controller may include: applying a first pulse voltage of a first voltage value to the electrode via the second power supply when the sensing information does not meet the predetermined condition at the second time point, or not applying the first pulse voltage to the electrode when the sensing information meets the predetermined condition; and applying a second pulse voltage of a second voltage value, the second voltage value being greater than the first voltage value, via the second power supply when the sensing information does not meet the predetermined condition at a third time point after the second time point.

[0074] According to one embodiment of this specification, controlling the second power supply by the controller may include: applying the pulse voltage to the electrode during a first time period when the sensing information does not meet the predetermined condition at the second time point, and applying the pulse voltage to the electrode during a second time period shorter than the first time period when the sensing information does not meet the predetermined condition at a third time point after the first time point from the second time point.

[0075] According to one embodiment of this specification, applying the RF voltage from the controller to the load via the first power supply may include: applying an RF voltage having a first value to the load from the first time point; and applying an RF voltage having a second value greater than the first value when the sensing information does not meet the predetermined condition at a third time point after the second time point.

[0076] According to one embodiment of this specification, the control of the second power supply by the controller may include: applying a pulse voltage of a first voltage value to the electrode via the second power supply when the sensing information does not meet the predetermined condition at the second time point; and stopping the application of the pulse voltage having the first voltage value when the sensing information meets the predetermined condition at a third time point after the second time point.

[0077] Invention patterns

[0078] The above-described objects, features, and advantages of this disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings. This disclosure can be modified in various ways and implemented by various embodiments, such that specific embodiments are shown and will be described in detail in the accompanying drawings.

[0079] In the accompanying drawings, the thickness of layers and areas is exaggerated for clarity. Furthermore, it should be understood that when a component or layer is located on another component or layer, the component or layer may be directly disposed on the other component or layer, or it may be disposed on the other component or layer with an intermediate layer or component between the component or layer and the other component or layer. Throughout the specification, the same reference numerals generally denote the same components. Additionally, in the drawings of each embodiment, the same reference numerals are used to describe components having the same function within the same scope.

[0080] The numbers used in illustrating this disclosure (e.g., first, second, etc.) are merely identification symbols used to distinguish the various components.

[0081] In addition, the terms “module” and “unit” used for components in the following description are given or combined and are used only for ease of preparing the instruction manual, and do not in themselves have a distinguishing meaning or function from each other.

[0082] The method according to the embodiments can be configured as program instructions executable by various computer components and recordable on a computer-readable medium. The computer-readable medium may include program instructions, data files, data structures, and the like, individually or in combination. The program instructions recorded on the medium may be specifically designed and configured for this disclosure or may be well known and usable by those skilled in the art of computer software. Examples of computer-readable recording media include: magnetic media, such as hard disks, floppy disks, and magnetic tapes; optical media, such as compact disc-read-only memory (CD-ROM) and digital versatile disc (DVD); magneto-optical media, such as floppy disks; and hardware components, such as ROM, random access memory (RAM), and flash memory, wherein the computer-readable recording medium is specifically configured to store and execute program instructions. Examples of program instructions may include machine language code compiled by a compiler and high-level language code executed by a computer using an interpreter. The aforementioned hardware components may be configured to act as one or more software modules to perform the operations of the embodiments, or vice versa.

[0083] 1. Plasma discharge

[0084] This disclosure will describe elements, systems, or methods for performing plasma discharge. This disclosure will also describe, with reference to several embodiments, elements, systems, or methods for assisting the initial discharge of plasma, thereby assisting plasma discharge, by generating ignition in the plasma discharge space prior to performing the main plasma discharge.

[0085] 1.1 System

[0086] According to an embodiment, a plasma discharge system may be provided.

[0087] Figure 1 This is a diagram showing a plasma discharge system. (Refer to...) Figure 1 The plasma generation system may include: a power supply unit 100 for providing power; a plasma generation unit 200 for obtaining power from the power supply unit and generating plasma; and a gas supply unit 300 for supplying gas to the plasma generation unit 200. The plasma generation system may further include a process unit 400 for performing processes using the generated plasma.

[0088] The power supply unit 100 can supply the power required to generate plasma. The power supply unit 100 can supply power to the plasma generating unit 200. The power supply unit 100 may include DC power and / or RF power. The power supply unit 100 can provide high-voltage pulses to the plasma generating unit 200 via DC power. The power supply unit 100 can provide RF power to the plasma generating unit 200 via RF power.

[0089] The plasma generation unit 200 can perform plasma discharge. The plasma generation unit 200 can acquire discharge gas and perform plasma discharge through the discharge gas. The plasma generation unit 200 can perform inductively coupled plasma discharge or capacitively coupled plasma discharge.

[0090] The plasma generation unit 200 can be a remote plasma source. The plasma generation unit 200 can form active species and provide the formed active species to the process unit 400.

[0091] The plasma generation unit 200 may include a normal pressure plasma element that performs plasma discharge at atmospheric pressure (normal pressure). For example, the plasma generation unit 200 may include a normal pressure plasma element that performs plasma discharge at pressures ranging from several hundred Torr to atmospheric pressure (750 Torr).

[0092] The plasma generation unit 200 may include a low-pressure plasma element for performing low-pressure plasma discharge. For example, the plasma generation unit 200 may include a low-pressure plasma element having a 10 -5 Up to 10 -7 or less than 10 -7 The initial vacuum level (base pressure) environment is maintained, and plasma is generated using the desired process gas at a process pressure of a few millitors to a few tors.

[0093] The plasma generation unit 200 can perform low-temperature plasma discharge operations at temperatures ranging from tens to hundreds of degrees Celsius. For example, the plasma generation unit 200 can perform low-pressure and low-temperature plasma discharge operations, such as cleaning, etching, deposition, surface treatment, and material synthesis in semiconductor and display manufacturing processes. Additionally, for example, the plasma generation unit 200 can perform normal-pressure and low-temperature plasma discharge operations for cleaning processes on glass substrates, modification of hydrophilic / hydrophobic surfaces, nanotechnology, sterilization, removal of harmful substances, and reduction of carbon dioxide.

[0094] The plasma generation unit 200 can perform high-temperature plasma discharge operations for plasma welding, cutting and metallurgy at temperatures ranging from several thousand degrees Celsius to tens of thousands of degrees Celsius.

[0095] The plasma generation unit 200 can generate seed charges to generate plasma. Specifically, when the plasma generation unit 200 performs normal pressure plasma discharge, it generates seed charges for initial discharge. The plasma generation unit 200 includes a DC electrode, and seed charges are generated when a high-voltage DC pulse is supplied to the DC electrode.

[0096] The plasma generation unit 200 can generate plasma by performing initial discharge and main discharge. The plasma generation unit 200 can perform initial discharge according to capacitive coupling mode (mode E) or main discharge according to inductive coupling mode (mode H). The plasma generation unit 200 includes an inductively coupled antenna containing a coil, and can perform initial discharge or main discharge when RF power is supplied to the inductively coupled antenna.

[0097] The detailed configuration and operation of the plasma generation unit 200 will be described below.

[0098] The gas supply unit 300 can supply gas for plasma discharge to the plasma generation unit 200. The gas supply unit 300 can also supply reactive gas or process gas to the plasma generation unit 200. The gas supply unit 300 can supply gas selected according to the function or purpose of the plasma generation unit 200 or the process unit 400.

[0099] For example, the gas supply unit 300 may supply the plasma generation unit 200 with any of the following gases or a mixture of gases and air: nitrogen trifluoride (NF3), argon (Ar), xenon (Xe), krypton (Kr), nitrogen (N2), oxygen (O2), hydrogen (H2), helium (He), neon (Ne), silane (SiH4), ammonia (NH3), phosphine (PH3), diborane (B2H6), dichlorosilane (DCS), octafluorocyclopropene (C5F8), carbon tetrafluoride (CF4), hydrogen bromide (HBr), chlorine (Cl2), sulfur hexafluoride (SF6), and methane (CH4). The gas supply unit 300 can supply gas to the plasma generation unit via liquid precursors (such as tetra-ethyl-ortho-silicate (TEOS), tetra(ethylmethylamino)zirconium, trimethylaluminum, and hexamethyldisiloxane).

[0100] Processing unit 400 can perform the process before or after plasma discharge. The processing unit can perform the desired process using plasma generated by plasma generation unit 200. Alternatively, processing unit 400 can transfer material generated by performing the desired process to plasma generation unit.

[0101] The following are possible process steps: a cleaning process that removes fine oil films from the surface of the material to be treated by surface and plasma ion / free radical collisions; an etching process that uses reactive etching gases to generate plasma and selectively removes materials using plasma; a deposition process that injects a suitable deposition gas and an additional gas for plasma discharge and deposits materials on the surface; a modification process that uses plasma to change the properties of the surface; and a material decomposition process that decomposes the target material by plasma discharge.

[0102] The process unit 400 can perform operations related to the processing of the semiconductor substrate. For example, the process unit 400 can receive active species (e.g., hydrogen-active species) from the plasma generation unit and can perform a cleaning process inside the process chamber.

[0103] The process unit 400 may include: a process chamber; a substrate holder disposed inside the process chamber, wherein the semiconductor substrate to be processed (e.g., a silicon semiconductor substrate) is located at the substrate holder; a shower head located above the substrate holder and used to supply substrate processing material into the process chamber; and / or a vacuum pump for discharging air from the process chamber.

[0104] The plasma generation system can be configured such that the process unit 400 performs the intended process through plasma generated by the plasma generation unit 200, or that byproducts generated by the intended process of the process unit 400 are processed by the plasma generation unit 200. Figure 2 This is a diagram illustrating a plasma generation system according to several embodiments.

[0105] Reference Figure 2 (a) According to an embodiment, the plasma generation system may include a process unit 401 and a plasma generation unit 201 for processing the materials generated by the process unit 401. For example, referring to... Figure 2 (a) The plasma generation system may include a gas scrubbing element. Process unit 401 is an element that performs a semiconductor manufacturing process. Plasma generation unit 201 may perform treatment of persistent gases (e.g., sulfur hexafluoride (SF6), carbon tetrafluoride (CF4), and perfluorocarbon (PFC) gases) generated during the semiconductor manufacturing process of process unit 401.

[0106] Reference Figure 2 (b) According to the embodiment, the plasma generation system may include: a plasma generation unit 202 that generates active species and supplies the active species to a process unit 402; and a process unit 402 that performs a process using the active species. For example, the plasma generation unit 202 may generate the active species through plasma discharge of gases such as NF3, H2, N2, O2, C3F8, CF4, Cl2, SiH4, and Ar. The process unit 402 may perform operations such as dry etching, plasma-enhanced chemical vapor deposition (PECVD), physical vapor deposition (PVD), ashing, and cleaning using the active species generated by the plasma generation unit 202.

[0107] 1.2 Plasma Discharge Device

[0108] 1.2.1 Structure of the plasma discharge device

[0109] According to an embodiment, elements for performing plasma discharge can be provided.

[0110] Figure 3 This is a diagram illustrating elements for generating plasma according to an embodiment. (Refer to...) Figure 3 According to an embodiment, the components for generating plasma may include: an RF power supply 101 capable of changing frequency; and a plasma generating unit that receives power from the RF power supply 101 and generates plasma. (See also...) Figure 3 The plasma generation unit may include: a discharge tube 210; gas tubes (211, 213) located inside the discharge tube 210; and an antenna module 220, including an antenna disposed near the discharge tube 210, receiving power from the RF power supply 120, forming an induced electric field and generating plasma inside the discharge tube 210. Elements for generating plasma may include electrodes 230, to which a DC power supply 110 applies a high-voltage pulse. Elements for generating plasma may further include an auxiliary gas supply nozzle 250.

[0111] RF power supply 101 can change its drive frequency within a variable frequency range. RF power supply 101 can have a variable frequency range from hundreds of kilohertz to tens of megahertz and a power supply of tens of kilowatts or more. For example, RF power supply 101 can provide 8 kilowatts or less. For example, RF power supply 101 can be an alternating current (AC) power supply providing power at frequencies ranging from 100 kilohertz to 5 megahertz.

[0112] The RF power supply 101 can achieve impedance matching by changing the driving frequency. The RF power supply 101 can change the driving frequency so that the plasma generation unit operates in a resonant state.

[0113] The RF power supply 101 may include: a rectifier that converts commercial AC power into DC power; a controller that controls the drive frequency and power supply by providing a switching signal; and an inverter that converts DC power into RF power based on the controller's switching signal.

[0114] The discharge tube 210 can be provided in the form of a cylindrical tube. The outer diameter of the discharge tube 210 can be from a few centimeters to tens of centimeters. The inner diameter of the discharge tube 210 can be a few millimeters to a few centimeters smaller than its outer diameter.

[0115] The discharge tube 210 may be a dielectric discharge tube. The discharge tube 210 may be made of a non-conductive material (e.g., ceramic (e.g., alumina or AlN), sapphire, and quartz).

[0116] The discharge tube 210 provides a discharge region in which plasma resides. The internal and external pressures of the discharge tube 210 can be adjusted differently. As needed, the internal pressure of the discharge tube 210 can be adjusted to an ultra-low pressure equivalent to a vacuum, or to a low pressure of a few millitors equal to or higher than atmospheric pressure.

[0117] Gas tubes (211, 213) provide pathways for supplying gas to the discharge tube 210 and its interior. Gas tubes (211, 213) prevent plasma from contacting the inner wall of the discharge tube 210 and ensure plasma stability.

[0118] The number of gas tubes (211, 213) may be one or more. The gas tubes may include a first gas tube 211 and a second gas tube 213. The first gas tube 211 and the second gas tube 213 may have a concentric structure. The first gas tube 211 provides an input path for a first gas (e.g., a gas used in a reaction, such as methane). The second gas tube 213 provides an input path for a second gas whose composition differs from that of the first gas (e.g., a gas containing carbon dioxide as a major component).

[0119] Gas pipes 211, the first gas pipe 211, and the second gas pipe 213 can provide swirling flow. For example, the first gas pipe 211 can provide internal swirling flow and the second gas pipe 213 can provide external swirling flow.

[0120] Components for generating plasma may include antenna module 220. Antenna module 220 may receive power from RF power supply 120 and may induce plasma discharge within discharge tube 210. (See reference...) Figure 12 Antenna module 220 will be described in more detail.

[0121] Antenna module 220 can receive power from RF power supply 120 and can induce plasma discharge inside discharge tube 210. Antenna module 220 can receive RF power from RF power supply 120 and can generate capacitively coupled plasma and / or inductively coupled plasma inside discharge tube 210.

[0122] Antenna module 220 may include a solenoid coil wound continuously around discharge tube 210 a number of times. Antenna module 220 may include multiple turns wound around discharge tube 210 and auxiliary capacitors disposed between each of the turns.

[0123] Components for generating plasma may include DC electrodes 230 located near antenna module 220. Components for generating plasma may include one or more electrodes connected to DC power supply 110. DC electrodes 230 will be described in detail below.

[0124] The auxiliary gas supply nozzle 250 supplies auxiliary gas to the discharge tube 210. The auxiliary gas supply nozzle 250 can be positioned near one end of the discharge tube 210 and the other end of the discharge tube 210 facing said end, through which gas is input. The auxiliary gas supply nozzle 250 can be disposed near the discharge tube 210 and between the antenna module 220 and the gas discharge port (the outlet of the discharge tube 210).

[0125] The components used to generate plasma may also include a safety housing 190 to ensure the safety of the discharge tube 210 and antenna module 220 and to block external influences.

[0126] 1.2.2 DC Power Supply and DC Electrodes

[0127] The plasma discharge apparatus according to an embodiment may include electrodes to which a high voltage is applied. The plasma discharge apparatus according to an embodiment may include DC electrodes to which a high voltage is applied by a DC power supply. When a high voltage is applied by the DC power supply to the DC electrodes, the DC electrodes form an electric field inside the discharge tube. When a high voltage is applied by the DC power supply to the DC electrodes, the DC electrodes form a strong electric field in a predetermined direction and provide seed charges inside the discharge tube. The DC electrodes provide seed charges inside the discharge tube to induce, promote, or assist plasma discharge.

[0128] The DC electrode can obtain a high voltage from a DC power supply. The DC power supply can apply a high-voltage pulse to the DC electrode. The DC power supply can apply the high-voltage pulse to the DC electrode at predetermined time intervals. The intensity and amplitude of the high-voltage pulse can be given as predetermined values.

[0129] Plasma discharge devices can apply a high voltage (or high voltage pulse) to electrodes (or DC electrodes) via a power source (or DC power source). Throughout this disclosure, it will be understood that the high voltage applied to the electrodes includes various types of DC voltage signals. The high voltage applied to the electrodes can include various types of DC voltage signals other than alternating current. For example, the high voltage applied to the electrodes may have a square pulse waveform or a rectangular pulse waveform. Additionally, for example, the high voltage applied to the electrodes may have a pulse waveform based on a portion (e.g., half a cycle) of a sine wave.

[0130] According to an embodiment, the plasma discharge device can change the signal of the voltage (or high-voltage pulse) applied to the electrode (or DC electrode) as needed. The plasma discharge device can gradually or sequentially increase or decrease the magnitude of the voltage applied to the electrode.

[0131] The DC electrodes and DC power supply according to several embodiments will be described below.

[0132] Figure 4 This is a diagram showing the DC electrodes according to an embodiment.

[0133] Reference Figure 4 (a) According to an embodiment, the element for generating plasma may include one or more electrodes located near the antenna module 220 that causes plasma discharge and connected to a DC power supply. The element for generating plasma may include: electrode 231, a first electrode 231 located above the antenna module 220; and a second electrode 233 located below the antenna module 220.

[0134] Reference Figure 4 (b) The elements for generating plasma may include: a first electrode 231 located on the outer surface of the discharge tube and above the induction coil 221 of the antenna module 220; and a second electrode 233 disposed around the outer surface of the discharge tube and below the induction coil 221. (Refer to...) Figure 4 (b) Electrode 231: The first electrode 231 may have the shape of a quadrilateral plate. The second electrode 233 may have the shape of the letter "C". Alternatively, the second electrode 233 may include multiple slits. To prevent eddy currents from flowing through the second electrode 233 due to the influence of the induced electric fields (E1 and E2) formed by the induction coil, the second electrode 233 may have an open loop structure that does not completely surround the outer wall of the discharge tube.

[0135] The DC power supply can apply a positive high voltage to the first electrode 231 and a negative high voltage to the second electrode 233. When a high voltage pulse is applied between the first electrode 231 and the second electrode 233 by the DC power supply, capacitively coupled plasma discharge (e.g., vertical streamer discharge) occurs between the first electrode 231 and the second electrode 233.

[0136] Figure 5 This is a diagram illustrating a DC power supply according to an embodiment.

[0137] Reference Figure 5 (a) The DC power supply may include: an AC-DC converter 111 that converts commercial AC power into DC voltage; a high-voltage pulse generator 113 that generates a positive DC high-voltage pulse through the DC voltage; and a controller 112 that controls the high-voltage pulse generator.

[0138] Figure 5 (b) is shown Figure 5 A diagram of an embodiment of the high-voltage pulse generator shown in (a).

[0139] Reference Figure 5 (b) According to the embodiment, the high-voltage pulse generator 113 may include: a first transformer 113a, including a primary coil that obtains DC voltage from an AC-DC converter and a secondary coil that generates a positive DC high-voltage pulse; a first power transistor 113b, connected to the primary coil of the first transformer 113a; a second transformer 113c, including a primary coil that obtains DC voltage from an AC-DC converter and a secondary coil that generates a negative DC high-voltage pulse; and a second power transistor 113d, connected to the primary coil of the second transformer. A controller 112 can control the gate of the first power transistor 113b and the gate of the second power transistor 113d. One end of the secondary coil of the first transformer 113a is grounded, and the other end of the secondary coil of the first transformer 113a can output a positive DC high-voltage pulse Vo1. One end of the secondary coil of the second transformer 113c is grounded, and the other end of the secondary coil of the second transformer 113c can output a negative DC high-voltage pulse Vo2.

[0140] The DC voltage Vin can be a DC power supply ranging from 12 volts to 24 volts. The controller 112 can control the first power transistor 113b and the second power transistor 113d by synchronizing their on-time with the repetition frequency. The DC high-voltage pulse voltage can be tens of kilovolts, for example, 10 kilovolts to 50 kilovolts. The DC high-voltage pulse repetition frequency can be several kilohertz to tens of kilohertz, for example, 10 kilohertz to 100 kilohertz.

[0141] Figure 6 This is a diagram showing a discharge electrode according to another embodiment.

[0142] Reference Figure 6 (a) According to the embodiment, the element for generating plasma may include an electrode 231 located near the antenna module 220 that causes plasma discharge and connected to the DC power supply 110.

[0143] The plasma-generating element can apply a high voltage to electrode 231 via DC power supply 110, causing capacitive coupling discharge between electrode 231 and a nearby object (e.g., a metal object located inside / outside the discharge tube). The plasma-generating element can also apply a high voltage to electrode 231 via DC power supply 110, causing capacitive coupling discharge between electrode 231 and a grounded gas tube 211 located inside the discharge tube. The plasma-generating element can cause a discharge between gas tube 211 and electrode 231 to provide seed charge. That is, gas tube 211 can be used as a counter electrode. However, this is only an example; another grounded conductor located near or inside the discharge tube can also be used as a counter electrode.

[0144] Reference Figure 6 (b) The element for generating plasma may include an electrode 231 located on the outer surface of the discharge tube and above the induction coil 221 of the antenna module 220. The electrode 231 may have a quadrilateral plate shape. The element for generating plasma applies a positive high voltage to the electrode 231, which has a quadrilateral plate shape and is located on the outer surface of the discharge tube, via a DC power supply, causing an induced discharge between the electrode 231 and a gas tube 211 located inside the discharge tube and grounded. When a high voltage pulse is applied to the electrode 231 via a DC power supply, a capacitively coupled plasma discharge, such as a streamer discharge, occurs between the electrode 231 and the gas tube 211.

[0145] Figure 7 (a) is a diagram illustrating the power supply according to an embodiment. Figure 7 (b) is shown Figure 7 A diagram of an embodiment of the high-voltage pulse generator shown in (a). Unless otherwise specifically stated, the diagram shows the power supply and the high-voltage pulse generator respectively. Figure 7 In this context, a similar reference can be applied. Figure 5 The content explained.

[0146] Reference Figure 7 (b) According to the embodiment, the high-voltage pulse generator 113 may include: a transformer 113e, including a primary coil that obtains DC voltage from an AC-DC converter and a secondary coil that generates a positive DC high-voltage pulse; and a transistor 113f, connected to the primary coil of the transformer 113e. A controller 112 can control the gate of the transistor 113e. One end of the secondary coil of the transformer 113f is grounded, and the other end of the secondary coil of the transformer 113f can output a positive DC high-voltage pulse Vout.

[0147] 1.2.3 RF Power Supply and Antenna Module

[0148] The element for generating plasma may include one or more inductive electrodes that induce a discharge inside a discharge tube. The element for generating plasma may include one or more antenna modules that, when powered by an RF power supply, induce an inductively coupled plasma discharge. Depending on the form of the antenna module and the frequency of the input power signal, the antenna module may operate differently. Antenna modules according to several embodiments will be described below.

[0149] 1.2.3.1 Type 1 Antenna Module

[0150] Figure 8 This is a diagram illustrating the form of an antenna module according to an embodiment. (Refer to...) Figure 8 According to the embodiment, the antenna module 223 may include a first capacitor 223a, an induction coil 223b, and a second capacitor 223c.

[0151] A first capacitor 223a may be connected between one end of the induction coil 223b and the RF power supply, and a second capacitor 223c may be connected between the other end of the induction coil 223b and the RF power supply. The first capacitor 223a and the second capacitor 223c may have the same capacitance.

[0152] The induction coil 223b may be located between the first capacitor 223a and the second capacitor 223c. The induction coil 223b may be a solenoid coil with a multi-layered structure. The induction coil 223b may be a solenoid coil wound multiple times and in multiple layers around the outer surface of the discharge tube. The unit turns constituting the induction coil 223b may be wound to form a magnetic field, which constructively interferes inside the discharge tube in response to the AC power supply. The induction coil 223b may be a solenoid coil wound multiple times in one direction around the outer surface of the discharge tube.

[0153] The induction coil 223b can be a densely wound solenoid coil, maximizing the number of windings per unit length of the discharge tube. Although in Figure 5 The diagram briefly illustrates this; however, the induction coil 223b can be configured to have a relatively... Figure 8 The solenoid coil shown has a large number of windings. For example, the induction coil 223b may have a three-layer structure, which includes an inner solenoid coil, a middle solenoid coil, and an outer solenoid coil connected to each other.

[0154] The induction coil 223b may be in the form of a conduit through which the cooling medium flows. The induction coil 223b may be a copper conduit. The cross-section of the induction coil 223b may be circular or quadrilateral.

[0155] The first capacitor 223a, the induction coil 223b, and the second capacitor 223c are connected in series and can resonate at a first frequency. The first frequency can be determined by the capacitance C1 of each of the first capacitor 223a and the second capacitor 223c and the inductance L1 of the induction coil 223b.

[0156] Figure 9 It is shown in Figure 8 The diagram shows the operation of the antenna module at its resonant frequency.

[0157] Reference Figure 9 The antenna module can resonate at a first frequency determined by the capacitance C1 of each of the first capacitor 223a and the second capacitor 223c and the inductance L1 of the induction coil 223b. When power is supplied at the first frequency, the first capacitor 223a and the second capacitor 223c induce a voltage drop opposite to that of the induction coil 223b, thereby minimizing the magnitude of the voltage Va induced at the opposite ends of the induction coil 223b.

[0158] Under resonant conditions, the first capacitor 223a and the second capacitor 223c can cancel out the reactance of the induction coil 223b. The plasma-generating element supplies power to the antenna module at a first frequency, such that the reactance of the induction coil 223b is canceled out by the first capacitor 223a and the second capacitor 223c, thereby achieving impedance matching. The first capacitor 223a and the second capacitor 223c can be symmetrically arranged relative to the induction coil 223b to reduce the voltage applied to the opposite ends of the induction coil 223b.

[0159] 1.2.3.2 Second type of antenna module

[0160] Figure 10 This is a diagram illustrating the form of an antenna module according to several embodiments. Figure 10 (a), (b) and (c) are diagrams showing antenna modules with induction coils having different numbers of turns per unit length of discharge tube. Figure 10 The antenna modules shown in (a), (b) and (c) may have different discharge characteristics.

[0161] Elements used to generate plasma may have the following characteristics: the smaller the number of turns of the induction coil in the antenna module per unit length of the discharge tube, the lower the energy loss and the narrower the discharge window. Elements used to generate plasma may have the following characteristics: the larger the number of turns of the induction coil in the antenna module per unit length of the discharge tube, the wider the discharge window, which is more advantageous in maintaining the discharge but also results in greater energy loss.

[0162] Reference Figure 10(a) Antenna module 235 may include: unit coil 235b, each layer having one turn wound around; and interlayer capacitor 235a, connecting the unit coils of the corresponding layers. Figure 10 The 12*1 turn antenna module 235 shown in (a) can be configured such that all antenna element turns are close to the outer surface of the discharge tube. Figure 10 The antenna module 235 shown in (a) may have a small number of turns per unit length (N / L), and therefore has relatively low discharge efficiency, low energy loss and relatively high process efficiency.

[0163] Reference Figure 10 (b) Antenna module 237 may include: unit coil 237b, each layer having two turns wound around; and interlayer capacitor 237a, for connecting the unit coils of the corresponding layer. Figure 10 The 6*2-turn antenna module 237 shown in (b) can have a relatively Figure 10 The antenna module 235 shown in (a) has a large number of turns per unit length (N / L). Figure 10 The antenna module 237 shown in (b) may have a relatively Figure 10 The antenna module 235 shown in (a) has high discharge efficiency. Discharge efficiency is proportional to the number of turns per unit length (N / L). For example, Figure 10 The antenna module 237 shown in (b) may have Figure 10 The discharge efficiency of the antenna module 235 shown in (a) is twice that of the antenna module 235.

[0164] Reference Figure 10 (c) Antenna module 239 may include: unit coils 239b, each layer having three turns wound around; and interlayer capacitors 239a, connecting the unit coils of the corresponding layers. Antenna module 239 may have a relatively... Figure 10 The antenna modules (235 and 237) shown in (a) and (b) have a large number of turns per unit length (N / L) and can have a relatively large number of turns per unit length. Figure 10 The antenna modules (235 and 237) shown in (a) and (b) exhibit high discharge efficiency. Compared to Figure 10 The antenna modules (235 and 237) shown in (a) and (b) have the characteristic that they can easily maintain discharge under gas conditions where discharge is difficult.

[0165] Figure 10 The antenna modules shown in (a), (b) and (c) may have different dielectric capacitances. Figure 10 The antenna module 235 shown in (a) may have a first dielectric capacitor. Figure 10 Antenna module 237 shown in (b) may have a second dielectric capacitor, and Figure 10The antenna module 239 shown in (c) may have a third dielectric capacitor. The second dielectric capacitor may be larger than the first dielectric capacitor and the third dielectric capacitor may be larger than the second dielectric capacitor.

[0166] Figure 11 It is shown in Figure 10 The diagram shows the operation of the antenna module at its resonant frequency. In the following text, reference will be made to... Figure 11 Explanation Figure 10 The voltage distribution of the antenna module at the resonant frequency shown in (c).

[0167] Reference Figure 11 According to the embodiment, the antenna module may include: a plurality of unit coils 239b; an interlayer capacitor 239a disposed between the plurality of unit coils; and a terminating capacitor 239c connected to unit coils located at upper and lower levels respectively (not shown).

[0168] The antenna module can resonate at a second frequency determined by the capacitance of the interlayer capacitor 239a, the inductance of the unit coil 239b, and the capacitance of the terminating capacitor 239c.

[0169] To minimize the voltage applied to unit coil 239b, the capacitance of terminating capacitor 239c can be determined to be twice the capacitance of interlayer capacitor 239a. In this paper, the antenna module can resonate at a second frequency determined by the capacitance C2 of interlayer capacitor 239a, the inductance L2 of unit coil 239b, and the capacitance 2*C2 of terminating capacitor 239c. (Refer to...) Figure 11 This shows that each of the interlayer capacitors 239a is a pair of imaginary capacitors connected in series, each having a capacitance of 2*C2.

[0170] In the resonant state, the multiple interlayer capacitors 239a and terminating capacitors 239c can reduce the voltage applied to the ends of the unit coil 239b. When power is supplied to the antenna module at the second frequency, the interlayer capacitors 239a and terminating capacitors 239c induce a voltage drop opposite to that of the induction coil 239b, thereby minimizing the magnitude of the induced voltage Vb at the opposite ends of the induction coil 239b.

[0171] Interlayer capacitor 239a and terminating capacitor 239c cancel the reactance of induction coil 239b. The plasma-generating element supplies power to the antenna module at a second frequency, such that the reactance of induction coil 239b is canceled by interlayer capacitor 239a and terminating capacitor 239c, thereby achieving impedance matching. Terminating capacitor 239c may be symmetrically arranged relative to induction coil 239b to reduce the voltage applied to the opposite ends of induction coil 239b. Interlayer capacitor 239a may be disposed between each layer of induction coil 239b to prevent capacitive coupling by minimizing the interlayer voltage difference between unit induction coils 239b.

[0172] Since the reactance of the induction coil 239b is canceled out by the interlayer capacitor 239a and / or the terminating capacitor 239c, the voltage at the corresponding unit coil 239b can have a corresponding relationship. For example, in the resonant state, the voltage between one end and the other end of the unit coil 239b can correspond to the voltage between one end and the other end of another unit coil 239b. The potential at one end of the unit coil 239b can correspond to the potential at one end of another unit coil 239b.

[0173] As a specific example, the antenna module may include: a first unit coil (or unit turn) having a first end and a second end; a first interlayer capacitor connected in series to the second end of the first unit coil; and a second unit coil having a first end and a second end, wherein the first end of the second unit coil is connected in series to the first interlayer capacitor. When the antenna module is in a resonant state, the potential at the first end of the first unit coil corresponds to the potential at the first end of the second unit coil. When the antenna module is in a resonant state, the voltage between the first end and the second end of the first unit coil corresponds to the voltage between the first end of the first unit coil and the second end of the second unit coil. When the antenna module is in a resonant state, the voltage between the first end and the second end of the first unit coil corresponds to the voltage between the first end of the first unit coil and the second end of the second unit coil.

[0174] Figure 12 It is shown Figure 10 The diagram shows the structure of the antenna module as shown in (c). The antenna module according to an embodiment may include: a plurality of unit coils 239b; and interlayer capacitors 239c disposed between the plurality of unit coils. Figure 12 The unit coil 239b of the antenna module according to an embodiment is shown.

[0175] The unit coil 239b may include multiple turns (TU1, TU2, and TU3). The unit coil 239b may include: a first terminal TE1; a first turn TU1 connected to the first terminal TE1; a first protrusion PR1 connected to the first turn TU1; a second turn TU2 connected to the first protrusion PR1; a second protrusion PR2 connected to the second turn TU2; a third turn TU3 connected to the second protrusion PR2; and a second terminal TE2 connected to the third turn TU3.

[0176] Unit coil 239b may have one direction (x-axis direction, see Figure 12 The open portion on the coil 239b. The first terminal TE1 and the second terminal TE2 of the unit coil 239b can be defined as an open portion that is open in one direction.

[0177] The turns (TU1, TU2, and TU3) can be arranged on the same plane. Each of the turns (TU1, TU2, and TU3) can have a predetermined center angle. The center angle of each turn can be equal to or greater than 270 degrees. The turns (TU1, TU2, and TU3) can be arranged to have the same central axis and can have different radii.

[0178] Each of the protrusions (PR1 and PR2) connects turns with different radii and can be arranged in a "U" shape. The first protrusion PR1 connects one end of the first turn TU1 to one end of the second turn TU2.

[0179] The first terminal TE1 or the second terminal TE2 can be connected to the interlayer capacitor 239c or the terminating capacitor 239a. For example, the first terminal TE1 can be connected to the terminating capacitor 239a and the second terminal TE2 can be connected to the interlayer capacitor 239c.

[0180] The antenna module may include multiple unit coils 239b. These unit coils may be arranged around the central axis of the discharge tube. For example, a first unit coil may be configured such that its protrusion protrudes in a first direction relative to the central axis of the discharge tube. A second unit coil may be configured such that its protrusion protrudes in a second direction relative to the central axis of the discharge tube. The first and second directions may form a predetermined angle relative to the central axis of the discharge tube. For example, the predetermined angle may be 90 degrees.

[0181] Figure 13 This is a block diagram illustrating an RF power supply according to an embodiment. (Refer to...) Figure 13 According to the embodiment, the RF power supply element 1000 may include an AC power supply 1100, a power supply element 1200, and a load 1400.

[0182] AC power supply 1100 may be a typical 60 Hz power supply used in a household or industrial setting. Load 1400 may be an electrical or electronic component used in a household or industrial setting. Load 1400 may be an element for generating plasma as described in this disclosure.

[0183] Power supply element 1200 can convert a first AC power supply into a second AC power supply and supply the second AC power supply to a load 1400. For example, the second AC power supply may have a drive frequency of several hundred kilohertz to tens of megahertz and can provide several kilowatts or more of power. Power supply element 1200 may include a rectifier 1210, a capacitor 1220, an inverter 1230, an impedance matching circuit 1300, and a controller 1250.

[0184] Rectifier 1210 converts the output of AC power supply 1100 into DC power supply. Rectifier 1210 supplies DC power between ground node GND and power node VP. Capacitor 1220 can be connected between power node VP and ground node GND. Capacitor 1220 discharges the AC component delivered to power node VP to ground node GND.

[0185] Inverter 1230 receives DC power from power node VP and ground node GND. Inverter 1230 receives a switching signal SW from controller 1250. In response to the switching signal SW, inverter 1230 converts the DC power into a second AC power. The second AC power can be supplied to load 1400 through impedance matching circuit 1300. Impedance matching circuit 1300 provides impedance matching for load 1400.

[0186] The controller 1250 can transmit a switching signal SW to the inverter 1230. The controller 1250 can control the switching signal SW, causing the inverter 1230 to convert DC power into a second AC power. The controller 1250 can control the switching signal SW, thereby adjusting the amount of power supplied from the inverter 1230 to the load 1400.

[0187] 1.3 Plasma Discharge Operation

[0188] According to an embodiment, a method for performing plasma discharge can be provided.

[0189] A method for performing plasma discharge according to an embodiment may include: providing a seed charge; and performing plasma discharge. The method for performing plasma discharge may include forming a seed charge inside the discharge tube by applying a high-voltage pulse to a DC electrode via a DC power supply. The method for performing plasma discharge may include inducing plasma discharge inside the discharge tube by applying an RF voltage to an antenna module via an RF power supply.

[0190] In the following text, refer to Figure 14 This section will describe the operation of a plasma discharge device or the method of performing plasma discharge. For convenience, the following description focuses on the case of a single electrode (DC electrode), but this is not necessary, and the plasma discharge device may also include a counter electrode.

[0191] Figure 14 This is a diagram illustrating the operation of the plasma discharge apparatus according to an embodiment of the plasma discharge apparatus described in this disclosure.

[0192] Reference Figure 14 (a) The method of performing plasma discharge may include applying a high voltage to the DC electrode 231 via a DC power supply 101 from a plasma discharge device. The method of performing plasma discharge may include applying a high voltage to the DC electrode 231 via a DC power supply 101 to form a first electric field E1. The first electric field E1 may be formed between the electrode 231 and the gas tube 211.

[0193] The method of performing plasma discharge may include applying a high voltage to the DC electrode 231 via a DC power supply 101 from a plasma discharge device to form seed charges inside the discharge tube. The method of performing plasma discharge may include applying a high voltage to the DC electrode 231 to form a high-density electric field between the DC electrode 231 and the gas tube 211 and induce charge concentration, thereby forming seed charges.

[0194] Reference Figure 14 (b) The method of performing plasma discharge may include applying an RF voltage to the antenna module 220 via the RF power supply 102.

[0195] Methods for performing plasma discharge may include applying an RF voltage to the antenna module 220 via an RF power supply 102 to form a second electric field E2 inside the discharge tube. Methods for performing plasma discharge may include applying an RF voltage to the antenna module 220 via an RF power supply 102 and forming a second electric field E2 to generate seed charges and / or plasma. Methods for performing plasma discharge may include forming a second electric field E2 to generate capacitively coupled plasma.

[0196] The second electric field E2 can be formed parallel to the axis of the discharge tube. The second electric field E2 can be formed parallel to the length direction of the induction coil of the antenna module 220.

[0197] A method for performing plasma discharge may include applying an RF voltage to the antenna module 220 via an RF power supply 102 to form a third electric field E3 inside the discharge tube. Alternatively, the method may involve forming a third electric field E3 inside the discharge tube to generate plasma within the discharge tube. Finally, the method may involve applying an RF voltage to the antenna module 220 via an RF power supply 102 and forming a third electric field E3 to generate seed charges and / or plasma.

[0198] The third electric field E3 can be formed in a direction parallel to the induction coil of the antenna module. The third electric field E3 can be formed parallel to the circumferential direction of the discharge tube.

[0199] 2. Ignition Assist Example

[0200] As described above, plasma generation is easily achieved in cases where the initial discharge (ignition) of plasma is carried out by applying a DC voltage and supplying seed charge.

[0201] However, supplying seed charge by applying DC voltage relies on charge accumulating through the formation of a capacitive electric field, which can damage the device in some cases. For example, the electric field created by the DC voltage is directed towards the inner wall of the gas tube or other structures, so particles or electrons accelerated by the electric field may collide with the inner wall of the gas tube. Such unintentional collisions can damage the inner wall of the gas tube or other structures and generate impurities such as particles. Damage to the device leads to device degradation and has an adverse effect. The generation of impurities is a factor that reduces the quality of the active species produced by the device.

[0202] However, depending on the type of gas, generating an induced electric field (or capacitive electric field) solely through an RF power supply and antenna module may be insufficient to create an environment conducive to the initial discharge of plasma. On the other hand, under specific discharge conditions, generating an induced electric field (or capacitive electric field) solely through an RF power supply and antenna module can smoothly achieve the initial discharge of plasma without applying a DC voltage through a DC power supply.

[0203] Therefore, a method is needed to assist in the initial discharge of plasma, while minimizing damage to components and particle generation by appropriately changing whether to apply DC voltage, the intensity of DC high voltage pulses, or the intensity of RF voltage according to the plasma discharge conditions.

[0204] The following describes elements for generating plasma and / or methods for controlling elements for generating plasma according to several embodiments, said elements and methods assisting plasma generation by controlling the output of a DC high-voltage pulse and / or an AC power supply. To achieve the above objectives, the following describes plasma elements and / or methods for controlling plasma elements, said elements and methods applying DC voltage and / or RF voltage in stages based on changes in plasma conditions.

[0205] The method for controlling the elements used to generate plasma as described in this disclosure can be implemented by the elements used to generate plasma or by a controller embedded in the elements used to generate plasma. The elements used to generate plasma can implement the method for controlling the elements used to generate plasma as described in this disclosure or may include a controller that implements the method.

[0206] Furthermore, it will be apparent to those skilled in the art that a method for controlling an element for generating plasma, corresponding to an embodiment of the element for generating plasma described in this disclosure, can be provided, and an element for generating plasma, corresponding to an embodiment of the method for controlling an element for generating plasma described in this disclosure, can be provided.

[0207] 2.1 Components

[0208] Figure 15 This is a diagram illustrating elements for generating plasma according to an embodiment.

[0209] Reference Figure 15 The plasma-generating element 2000 according to the embodiment may include: a chamber 2010 providing a plasma generation space; an antenna module 2030 located near the chamber 2010 and receiving power from a first power source P1; an electrode 2050 located near the chamber 2010 and receiving power from a second power source P2; a sensor 2070; and a controller 2090 controlling the first power source P1 and the second power source P2.

[0210] Antenna module 2030 can be located near the cavity, connected to a first power source, and can generate an induced electric field inside the cavity. Electrode 2050 can be located near the cavity, connected to a second power source, and can assist in plasma generation.

[0211] Sensor 2070 can acquire sensing information related to the state of the plasma. Sensor 2070 can acquire power, current, or voltage at a location in the elements used to generate the plasma. For example, sensor 2070 can acquire sensing information indicating the power supplied to the load by a first power source. Sensor 2070 can acquire sensing information indicating the current flowing through the load and / or the voltage applied to the load by the first power source.

[0212] The controller 2090 can provide AC power (or AC voltage or RF power) to the antenna module 2030 via the first power supply P1. The controller 2090 can generate a switching signal for controlling the inverter of the first power supply P1 and can transmit the switching signal to the first power supply P1 to control the output of the first power supply P1.

[0213] The controller 2090 can apply a high-voltage pulse to the electrode 2050 via the second power supply P2. The controller 2090 can generate a pulse control signal for controlling the pulse generator of the second power supply P2 and can transmit the pulse control signal to the second power supply P2 to control the second power supply P2.

[0214] The controller 2090 can obtain sensing information related to the plasma condition through the sensor 2070. The controller 2090 can obtain sensing information through the sensor 2070 and can change the operating status of the first power supply P1 and / or the second power supply P2 based on the obtained sensing information.

[0215] According to an embodiment, when the sensing information does not meet a predetermined condition at a second time point, the controller 2090 applies a high-voltage pulse of a first voltage to the electrode via a second power supply. When the sensing information does not meet the predetermined condition at a third time point after the second time point, the controller 2090 applies a high-voltage pulse of a second voltage, which is higher than the first voltage, to the electrode via the second power supply.

[0216] According to another embodiment, when the sensing information does not meet a predetermined condition at a second time point, the controller 2090 applies a high-voltage pulse to the electrode during a first time period. When the sensing information does not meet the predetermined condition at a third time point after the first time point from the second time point, the controller 2090 applies a high-voltage pulse to the electrode during a second time period that is shorter than the first time period.

[0217] According to another embodiment, the controller 2090 applies a first-value RF voltage to the load starting from a first time point. When the sensing information does not meet a predetermined condition at a third time point after the first time point and before the second time point, the controller 2090 applies a second-value RF voltage to the load that is larger than the first value.

[0218] Simultaneously, when the sensed information does not meet the predetermined conditions at the second time point, the controller 2090 applies a high-voltage pulse of the first voltage to the electrode via the second power supply. When the sensed information meets the predetermined conditions at a third time point later than the second time point, the controller 2090 stops applying the high-voltage pulse.

[0219] 2.2 Control Methods

[0220] Figure 16This is a diagram illustrating a method for controlling elements used to generate plasma according to an embodiment.

[0221] Reference Figure 16 The method for controlling the elements used to generate plasma according to the embodiment may include: applying an RF voltage to a load at step S110; obtaining sensing information related to the condition of the plasma at step S130; and controlling a second power supply based on the sensing information at step S150.

[0222] According to an embodiment, a method is provided for controlling an element 2000 for generating plasma, the element comprising: a chamber 2010 providing a space for plasma generation; an antenna module 2030 located near the chamber 2010 and receiving power from a first power source P1; an electrode 2050 located near the chamber 2010 and receiving power from a second power source P2; a sensor 2070; and a controller 2090 controlling the first power source P1 and the second power source P2.

[0223] Applying an RF voltage to the load at step S110 may include the controller 2090 applying an RF voltage to the load, which includes the antenna module, via a first power supply P1 starting from a first time point.

[0224] Obtaining sensing information related to the plasma condition at step S130 may include: the controller 2090 obtaining sensing information related to the plasma condition based on the RF voltage.

[0225] Controlling the second power supply P2 based on sensing information at step S150 may include the controller 2090 controlling the second power supply P2 from a second time point based on sensing information, the second time point being a predetermined time after the first time point.

[0226] Controlling the second power supply P2 by the controller 2090 at step S150 may include operating according to predetermined conditions, wherein when the sensing information indicates that no plasma is generated inside the chamber, the controller 2090 applies a pulse to the electrode 2050 via the second power supply P2, or when the sensing information indicates that plasma is generated inside the chamber, the controller 2090 does not apply a pulse to the electrode 2050.

[0227] According to an embodiment, controlling the second power supply P2 by the controller 2090 at step S150 may include: when the sensing information meets a predetermined condition at a second time point, the controller 2090 does not apply a high-voltage pulse to the electrode 2050 through the second power supply P2, or when the sensing information does not meet the predetermined condition at the second time point, the controller applies a high-voltage pulse to the electrode 2050 through the second power supply P2. In this regard, a detailed description will be given in the following Embodiment 1.

[0228] The controller 2090 can obtain sensing information related to the power supplied from the first power source P1 to the load via the sensor 2070. In this document, controlling the second power source P2 by the controller 2090 may include: applying a pulsed voltage to the electrode 2050 when the sensing information indicates that the power supplied to the load at a second time point is equal to or less than a reference power source, or not applying a pulsed voltage to the electrode 2050 when the sensing information indicates that the power supplied to the load at a second time point is equal to or greater than a reference power source.

[0229] According to an embodiment, the first power supply P1 includes a DC power supply and an inverter that converts the DC power supply into an RF power supply. A sensor 2070 is located between the DC power supply and the inverter of the first power supply P1 and can obtain a first voltage output from the DC power supply and a first current output from the DC power supply. In this document, controlling the second power supply P2 by the controller 2090 may include controlling the second power supply P2 by the controller 2090 based on the power supplied to the load, wherein the power supply is determined based on the first voltage and the first current.

[0230] According to an embodiment, sensor 2070 can obtain sensing information related to a second current flowing through antenna module 2030. Controlling the second power supply P2 by controller 2090 may include: acquiring the sensing information by controller; and applying a pulse voltage to the electrode by controller when the phase difference between the second current and the RF voltage does not meet a predetermined condition at a second time point, or not applying a pulse voltage to the electrode when the phase difference between the second current and the RF voltage meets the predetermined condition at a second time point.

[0231] A method for controlling the elements used to generate plasma may include applying a unit pulse with an increased voltage to the electrodes when no plasma is generated in response to the application of a unit pulse to the electrodes.

[0232] According to an embodiment, controlling the second power supply by the controller 2090 may further include: when the sensing information does not meet a predetermined condition at a second time point, the controller applies a high-voltage pulse of the first voltage to the electrode through the second power supply, or does not apply a high-voltage pulse to the electrode when the sensing information meets the predetermined condition; and when the sensing information does not meet the predetermined condition at a third time point after the second time point, the controller applies a high-voltage pulse of the second voltage, which is higher than the first voltage, to the electrode through the second power supply.

[0233] The method of controlling the elements used to generate plasma may further include stopping the operation of the second power supply when a plasma discharge is generated (i.e., when sensing information related to the plasma discharge is obtained).

[0234] According to an embodiment, controlling the second power supply by the controller 2090 may include: when the sensing information does not meet a predetermined condition at a second time point, the controller 2090 applies a high-voltage pulse of a first voltage to the electrode through the second power supply; and when the sensing information meets the predetermined condition at a third time point after the second time point, the controller 2090 stops applying the high-voltage pulse.

[0235] Methods for controlling elements used to generate plasma may include applying unit pulses to electrodes at reduced time intervals when no plasma is generated in response to the application of a unit pulse to the electrodes.

[0236] According to an embodiment, the controller controlling the second power supply may further include: when the sensing information does not meet a predetermined condition at a second time point, applying a high-voltage pulse to the electrode during a first time period; and when the sensing information does not meet the predetermined condition at a third time point after the second time point, applying a high-voltage pulse to the electrode during a second time period shorter than the first time period.

[0237] Furthermore, in the above embodiments, the method for controlling the elements used to generate plasma includes controlling the second power supply P2 based on sensing information at step S150, but the content of the present invention described herein is not limited thereto. For example, the method for controlling the elements used to generate plasma may include controlling the first power supply P1 based on sensing information.

[0238] A method for controlling elements for generating plasma according to an embodiment may include applying an RF voltage to an antenna module with an increased amplitude when no plasma is generated in response to a unit pulse applied to an electrode.

[0239] According to an embodiment, the controller applying an RF voltage to the load via a first power supply may further include: applying an RF voltage of a first value to the load starting from a first time point; and applying an RF voltage of a second value larger than the first value to the load when the sensing information does not meet a predetermined condition at a third time point after the first time point and before the second time point.

[0240] 2.3DC High Voltage Application Modulation

[0241] According to an embodiment, the elements for generating plasma can determine whether to apply a DC high-voltage pulse based on predetermined conditions. The application of the DC high-voltage pulse can be determined based on the state of the plasma. The elements for generating plasma can determine whether to apply the DC high-voltage pulse based on whether plasma ignition (or generation) is performed.

[0242] As a specific example, a method for controlling the elements used to generate plasma may include: applying an RF voltage to an antenna module to induce an initial discharge, and, if no initial discharge (or ignition) occurs within a predetermined time, assisting the initial discharge by applying a high-voltage pulse to the electrodes. As described above, the elements used to generate plasma first apply an RF voltage to the antenna module, and only apply a high-voltage pulse to the electrodes when no initial discharge occurs, thereby suppressing damage to the elements or the generation of fine particles caused by the high-voltage pulse.

[0243] As another specific example, after applying a unit high-voltage pulse to the electrode at least once, the element used to generate plasma determines whether predetermined conditions related to plasma generation are met, and when the conditions are not met (i.e., when no plasma is generated), changes the output state of the high-voltage pulse. For example, the element used to generate plasma, or its controller, is configured to: apply an RF voltage to the antenna module via a first power supply starting from a first time point; when the sensing information does not meet the predetermined conditions at a second time point after the first time point (or after the second time point), output the first power supply by applying a high-voltage pulse to the electrode via a second power supply; and when the sensing information does not meet the predetermined conditions at a third time point after the second time point, output a second power supply larger than the first power supply by applying a high-voltage pulse to the electrode via the second power supply. Outputting a second power supply larger than the first power supply by applying a high-voltage pulse to the electrode using the element used to generate plasma may include increasing the voltage of the high-voltage pulse or increasing the number of high-voltage pulses.

[0244] 2.3.1 Example 1

[0245] According to an embodiment, an element for generating plasma is provided, wherein the element applies an RF voltage to an antenna module to obtain sensing information related to the state of the plasma, and applies a high-voltage pulse to electrodes when the sensing information does not meet predetermined conditions within a predetermined time. According to an embodiment, a method for controlling an element for generating plasma may include applying a high-voltage pulse to electrodes when no plasma generation is detected.

[0246] The element for generating plasma or its controller is configured to: apply an RF voltage to a load including an antenna module via a first power supply starting from a first time point; obtain sensing information related to the state of the plasma based on the RF voltage; and control a second power supply starting from a second time point based on the sensing information, the second time point being a predetermined time after the first time point.

[0247] The components or controller used to generate plasma can acquire sensing information after a first time point. The components or controller used to generate plasma can acquire sensing information related to the state of the plasma after the first time point, where changes caused by an applied RF voltage after the first time point are applied to the plasma. The components or controller used to generate plasma can control a second power supply based on sensing information acquired after a second time point, which is a predetermined time after the first time point. The components or controller used to generate plasma can control a second power supply based on sensing information acquired after the second time point.

[0248] When the sensing information does not meet the predetermined conditions at the second time point, the element used to generate plasma or its controller applies a pulse voltage to the electrode through the second power supply, or when the sensing information meets the predetermined conditions at the second time point, the pulse voltage is not applied to the electrode through the second power supply.

[0249] The element for generating plasma or its controller can operate according to predetermined conditions, wherein when the sensing information indicates that no plasma is generated inside the chamber, the controller applies a pulse to the electrodes via a second power supply, or when the sensing information indicates that plasma is generated inside the chamber, the controller does not apply a pulse to the electrodes.

[0250] When the sensing information indicates that the power supplied to the load at the second time point is equal to or less than the reference power supply, the element for generating plasma or its controller applies a pulsed voltage to the electrode; or when the sensing information indicates that the power supplied to the load at the second time point is equal to or greater than the reference power supply, no pulsed voltage is applied to the electrode.

[0251] According to an embodiment, the first power source may include a DC power source and an inverter that converts the DC power source into an RF power source. A sensor may be located between the DC power source and the inverter of the first power source and may obtain a first voltage output from the DC power source and a first current output from the DC power source.

[0252] The controller can apply a pulsed voltage to the electrodes based on the power supplied to the load, wherein the power supply is determined based on a first voltage and a first current.

[0253] For example, the plasma-generating element can obtain the power supply value from the first power source to the load via a sensor and can control the second power source based on whether the obtained power supply value exceeds a predetermined condition value. When the obtained power supply value does not exceed the predetermined condition value, the plasma-generating element applies a high-voltage pulse to the electrodes via the second power source, or when the obtained power supply value exceeds the predetermined condition value, it does not apply a high-voltage pulse to the electrodes via the second power source. Alternatively, the plasma-generating element can control the second power source based on whether the obtained power supply value exceeds a predetermined ratio.

[0254] According to another embodiment, the sensor can obtain sensing information based on a second current flowing through the antenna module.

[0255] When the phase difference between the second current and the RF voltage does not meet the predetermined condition at the second time point, the controller obtains sensing information and applies a pulse voltage to the electrode; or when the phase difference between the second current and the RF voltage meets the predetermined condition at the second time point, the controller does not apply a pulse voltage to the electrode.

[0256] For example, the components used to generate plasma can obtain phase information of the current flowing through the antenna module through a sensor, obtain phase information of the voltage applied to the antenna module from the switching signal generated by the controller, and determine whether a predetermined condition is met based on the phase information of the current flowing through the antenna module and the phase information of the voltage applied to the antenna module.

[0257] Figure 17 This is a diagram illustrating a method for controlling elements used to generate plasma according to an embodiment.

[0258] Reference Figure 17 The method for controlling the elements used to generate plasma according to the embodiment may include: applying an RF voltage to a load at step S110; obtaining sensing information related to the state of the plasma at step S130; determining at step S151 whether the sensing information meets a predetermined condition; and applying a high-voltage pulse to an electrode at step S152 when the sensing information does not meet the predetermined condition.

[0259] Methods for controlling components used to generate plasma may include: applying an RF voltage to an antenna module; acquiring sensing information via a sensor at predetermined time intervals; and changing the operating status of a second power supply, including a pulse generator, based on the sensing information.

[0260] Figure 18 This is a diagram illustrating the output current and high-voltage pulse output according to a method for controlling an element 2000 for generating plasma, as described in an embodiment. Referring below... Figure 15 Explanation Figure 18 The output current and high-voltage pulse output are shown in the figure.

[0261] Figure 18 (a) shows the output current i flowing through the antenna module (or load) according to an embodiment of the method for controlling the element 2000 for generating plasma. RF When the plasma-generating element 2000 drives the first power supply P1 (AC power supply), the output current i RFThis can be the current flowing through the load or antenna module. When the components used to generate plasma apply an AC voltage to the antenna module via an AC power supply, the output current i... RF It can be the AC current measured at the antenna module (or load).

[0262] A method for controlling an element 2000 for generating plasma according to an embodiment may include applying an AC voltage to an antenna module 2030 via a first power supply P1. (See also...) Figure 18 In (a) and (b), the method of controlling the element 2000 for generating plasma 200 may include applying an AC voltage to the antenna module 2030 starting from a first time point (t1). The method of controlling the element 2000 for generating plasma may include: applying an AC voltage to the antenna module 2030 via a first power supply P1 starting from the first time point; and obtaining an output current i flowing through the antenna module 2030. RF .

[0263] A method for controlling an element 2000 for generating plasma according to an embodiment may include applying a high-voltage pulse to an electrode 2050 via a second power supply P2. Figure 18 (b) illustrates a high-voltage pulse V according to an embodiment of a method for controlling an element 2000 for generating plasma. ig The waveform. (Refer to...) Figure 18 (b) The method of controlling the element 2000 for generating plasma may include applying a high-voltage pulse to the electrode 2050 via a second power supply P2 for a predetermined time period. The method of controlling the element 2000 for generating plasma may include applying a high-voltage pulse to the electrode 2050 for a predetermined time period (a first time interval PT1 in the following example) until plasma generation is detected after a second time point t2.

[0264] Reference Figure 18 (b) According to an embodiment, the method of controlling the element 2000 for generating plasma may include applying a high-voltage pulse to the electrode 2050 starting from a second time point t2, the second time point t2 being a predetermined time PT after a first time point t1. The method of controlling the element 2000 for generating plasma may include applying a first unit pulse UP1 to the electrode 2050 at the second time point t2 (or at least after the second time point t2).

[0265] A method for controlling the plasma-generating element 2000 may include: obtaining information indicating whether plasma is being generated via a power sensor, current sensor, or voltage sensor; and controlling a second power supply P2 based on the obtained information. The method for controlling the plasma-generating element 2000 may also include determining whether to apply a high-voltage pulse based on information obtained via sensor 2070.

[0266] A method for controlling the element 2000 for generating plasma may include: applying a first unit pulse UP1 to the electrode 2050 at least after the second time point t2 when no plasma is generated inside the chamber 2010 at the second time point t2, in response to the application of an AC voltage to the antenna module 2030 via a first power supply P1 starting from a first time point t1.

[0267] A method for controlling the element 2000 for generating plasma may include: applying a first unit pulse UP1 to the electrode 2050 at a second time point t2; and applying a second unit pulse UP2 to the electrode 2050 after a first time interval PT1 from the second time point t2.

[0268] A method for controlling the element 2000 for generating plasma may include: when no plasma is generated after a first unit pulse UP1 is applied to the electrode 2050 at a second time point t2, applying a second unit pulse UP2 to the electrode 2050 after a first time interval PT1 from the second time point t2. The method for controlling the element 2000 for generating plasma may include: applying the first unit pulse UP1 to the electrode 2050 at the second time point t2; and applying the second unit pulse UP2 to the electrode 2050 after a first time interval PT1 from the second time point t2 when no plasma discharge is generated in response to the application of the first unit pulse UP1.

[0269] A method for controlling the element 2000 for generating plasma may include: applying a second unit pulse UP2; and applying a third unit pulse UP3 to the electrode 2050 after a first time interval PT1 from the time the second unit pulse UP2 is applied.

[0270] A method for controlling the plasma-generating element 2000 may include stopping the application of a high-voltage pulse. A method for controlling the plasma-generating element 2000 may include stopping the application of a high-voltage pulse to the electrode 2050 when plasma generation is detected inside the chamber 2010. (See reference...) Figure 18 (b) The method of controlling the element 2000 for generating plasma may include: applying a third unit pulse UP3; and stopping the application of a high voltage pulse to the electrode 2050 in response to plasma generation inside the chamber 2010.

[0271] A method for controlling the plasma-generating element 2000 may include stopping the application of a high-voltage pulse based on a value obtained by a power sensor, current sensor, or voltage sensor. That is, the method for controlling the plasma-generating element 2000 may include: obtaining a measurement indicating the state of the plasma via a sensor 2070; and stopping the application of a high-voltage pulse in response to obtaining the measurement indicating plasma generation.

[0272] 2.3.2 Example 2

[0273] According to an embodiment, an element for generating plasma is provided, wherein the element obtains sensing information related to the state of the plasma, and increases the voltage of a pulse applied to an electrode when the sensing information does not meet predetermined conditions. According to an embodiment, a method for controlling the element for generating plasma may include increasing the voltage of a pulse applied to an electrode when no plasma generation is detected.

[0274] Figure 19 This is a diagram illustrating a method for controlling elements used to generate plasma according to an embodiment. Figure 16 The content can be similarly applied to references. Figure 19 The method described is to control the components used to generate plasma.

[0275] Reference Figure 19 The method for controlling the elements used to generate plasma according to the embodiment may include: after obtaining sensing information related to the state of the plasma at step S130 as described above, determining at step S161 whether the sensing information meets a predetermined condition; when the sensing information does not meet the predetermined condition, applying a high-voltage pulse to the electrode at step S162; obtaining sensing information again after applying the high-voltage pulse to the electrode, and determining at step S163 whether the obtained sensing information meets the predetermined condition; and increasing the voltage of the high-voltage pulse at step S164.

[0276] A method for controlling an element used to generate plasma may include: periodically acquiring sensing information; and determining whether the acquired sensing information meets predetermined conditions. A method for controlling an element used to generate plasma may also include: periodically determining whether the sensing information meets predetermined conditions; and increasing the voltage value of a high-voltage pulse when the sensing information does not meet predetermined conditions.

[0277] Reference Figure 19A method for controlling an element used to generate plasma may include repeatedly performing the following steps: when the obtained sensing information does not meet predetermined conditions, applying a high-voltage pulse to an electrode at step S162; obtaining sensing information again after applying a high-voltage pulse to the electrode, and determining at step S163 whether the obtained sensing information meets predetermined conditions; and increasing the voltage of the high-voltage pulse at step S164.

[0278] Figure 20 This is a diagram illustrating the output of RF current and high-voltage pulses of a method for controlling elements used to generate plasma according to an embodiment.

[0279] Reference Figure 20 The method for controlling the elements for generating plasma according to the embodiment may include: after obtaining sensing information related to the state of the plasma at step S130 as described above, determining at step S165 whether the sensing information meets a predetermined condition; when the sensing information does not meet the predetermined condition, applying a high-voltage pulse of a first voltage to the electrode at step S166; determining at step S167 whether the sensing information meets the predetermined condition; and applying a high-voltage pulse of a second voltage to the electrode at step S168.

[0280] Reference Figure 20 A method for controlling an element used to generate plasma may include: obtaining first sensing information at a first time point in step S130; when the obtained first sensing information does not meet a predetermined condition, applying a high-voltage pulse of a first voltage to an electrode through a second power supply in step S166; obtaining (not shown) second sensing information at a second time point after the first time point; when the obtained second sensing information does not meet a predetermined condition, applying a high-voltage pulse of a second voltage higher than the first voltage to the electrode through a second power supply in step S168.

[0281] Figure 21 This is a diagram illustrating the output current and high-voltage pulse output according to a method for controlling an element 2000 for generating plasma, as described in an embodiment. Referring below... Figure 15 The element 2000 for generating plasma shown illustrates the RF current and high voltage pulse output by the element 2000 for generating plasma according to an embodiment.

[0282] Figure 21 (a) shows the output current i flowing through the antenna module (or load) according to an embodiment of the method for controlling the element 2000 for generating plasma. RF A method for controlling the plasma-generating element 2000 according to an embodiment may include applying an AC voltage to the antenna module 2030 via a first power supply P1 starting from a first time point t1. (See also...) Figure 18The description can be similarly applied to the operation of the element 2000 for generating plasma, which generates an output current i. RF Alternatively, AC voltage can be applied to the antenna module 2030.

[0283] Reference Figure 21 (b) According to the embodiment, the method of controlling the element 2000 for generating plasma may include applying a high-voltage pulse to the electrode 2050 via a second power supply P2. The operation of applying the high-voltage pulse, unless otherwise specifically stated, can be similarly applied with reference to [reference needed]. Figure 18 The content explained.

[0284] According to an embodiment, a method for controlling the element 2000 used to generate plasma may include applying a high-voltage pulse to the electrode 2050 for a predetermined time period (a first time interval PT1 in the following example) until plasma generation is detected after a second time point t2. Hereinafter, the intensity of the applied unit high-voltage pulse may be varied.

[0285] A method for controlling the plasma-generating element 2000 may include: obtaining information indicating whether plasma is being generated via a power sensor, current sensor, or voltage sensor; and controlling a second power supply P2 based on the obtained information. The method for controlling the plasma-generating element 2000 may also include determining whether to apply a high-voltage pulse based on information obtained via sensor 2070.

[0286] Reference Figure 21 (b) The method of controlling the element 2000 for generating plasma may include applying a first unit pulse UP1 to the electrode 2050 at a second time point t2 (or at least after the second time point t2), the second time point t2 being a predetermined time PT from the first time point t1. The method of controlling the element 2000 for generating plasma may include applying the first unit pulse UP1 to the electrode 2050 at least after the second time point t2 when no plasma is generated inside the chamber 2010 at the second time point t2 in response to the application of an AC voltage to the antenna module 2030 via a first power supply P1 starting from the first time point t1.

[0287] A method for controlling the plasma-generating element 2000 may include applying a second unit pulse UP2 to the electrode 2050 after a first time interval PT1 starting from a second time point t2. The second unit pulse UP2 may have a larger value than the first unit pulse UP1. The method for controlling the plasma-generating element 2000 may also include applying a second unit pulse UP2 to the electrode 2050 after a predetermined time interval PT1 starting from the second time point t2 when no plasma is generated within that predetermined time interval PT1, the voltage of the second unit pulse UP2 being higher than the voltage of the first unit pulse UP1.

[0288] A method for controlling the element 2000 for generating plasma may include: applying a second unit pulse UP2; and applying a third unit pulse UP3 to the electrode 2050 after a first time interval PT1 from the time the second unit pulse UP2 is applied, the voltage of the third unit pulse UP3 being higher than the voltage of the second unit pulse UP2.

[0289] A method for controlling the plasma-generating element 2000 may include stopping the application of a high-voltage pulse to the electrode 2050 based on a value obtained by the sensor 2070. The method for controlling the plasma-generating element 2000 may also include stopping the application of a high-voltage pulse to the electrode 2050 when a value obtained by the sensor 2070 meets a predetermined condition. (See reference...) Figure 21 (b) The method of controlling the element 2000 for generating plasma may include stopping the application of a high-voltage pulse to the electrode 2050 in response to plasma generation inside the chamber 2010 after the application of a third unit pulse UP3 (e.g., at a third time point t3).

[0290] 2.3.3 Example 3

[0291] According to an embodiment, an element for generating plasma is provided, wherein the element applies an RF voltage to an antenna module to obtain sensing information related to the state of the plasma, and adjusts the time period of a high-voltage pulse applied to an electrode when the sensing information does not meet predetermined conditions. According to an embodiment, a method for controlling an element for generating plasma may include shortening the operating time period of a second power supply that generates the high-voltage pulse when no plasma generation is detected.

[0292] Figure 22 This is a diagram illustrating a method for controlling elements used to generate plasma according to an embodiment.

[0293] Reference Figure 22The method for controlling the elements used to generate plasma according to the embodiment may include: after obtaining sensing information related to the state of the plasma at step S130 as described above, determining at step S171 whether the sensing information meets a predetermined condition; when the sensing information does not meet the predetermined condition, applying a high-voltage pulse to the electrode at step S172; after applying the high-voltage pulse to the electrode, determining at step S173 whether the sensing information meets the predetermined condition; and when the sensing information does not meet the predetermined condition, shortening the time period of the high-voltage pulse at step S174.

[0294] Methods for controlling elements used to generate plasma may include: periodically acquiring sensing information; determining whether the acquired sensing information meets predetermined conditions; and shortening the time period of high-voltage pulses applied to the electrodes (the time interval between adjacent high-voltage pulses in a time series) when the sensing information does not meet predetermined conditions.

[0295] Reference Figure 22 A method for controlling an element used to generate plasma may include repeatedly performing the following steps: when the sensing information does not meet a predetermined condition, applying a high-voltage pulse to an electrode at step S172; obtaining sensing information again after applying the high-voltage pulse to the electrode, and determining at step S173 whether the obtained sensing information meets the predetermined condition; and when the obtained sensing information does not meet the predetermined condition, shortening the time period of the high-voltage pulse at step S174.

[0296] Figure 23 This is a diagram illustrating the output of RF current and high-voltage pulses according to an embodiment of a method for controlling elements used to generate plasma.

[0297] Reference Figure 23 The method for controlling the elements for generating plasma according to the embodiment may further include: after obtaining sensing information related to the state of the plasma at step S130 as described above, determining at step S175 whether the sensing information meets a predetermined condition; when the sensing information does not meet the predetermined condition, applying a high-voltage pulse to the electrode at a first time interval at step S176; after applying the high-voltage pulse to the electrode at the first time interval, determining at step S177 whether the sensing information meets the predetermined condition; and when the sensing information does not meet the predetermined condition, applying a high-voltage pulse to the electrode at a second time interval at step S178.

[0298] Reference Figure 23A method for controlling an element used to generate plasma may include: at step S130, obtaining first sensing information at a first time point; at step S175, determining whether the obtained first sensing information meets a predetermined condition; when the obtained first sensing information does not meet the predetermined condition, applying a high-voltage pulse to an electrode via a second power supply at a first time interval at step S176; obtaining (not shown) second sensing information at a second time point after the first time point; when the obtained second sensing information does not meet the predetermined condition, applying a high-voltage pulse to an electrode via a second power supply at a second time interval shorter than the first time interval at step S178.

[0299] Figure 24 This is a diagram illustrating the output current and high-voltage pulse output according to a method for controlling an element 2000 for generating plasma, as described in an embodiment. Unless otherwise specifically stated, refer to... Figure 18 and Figure 21 The content described can be similarly applied to reference. Figure 24 The method described is to control the element 2000 used to generate plasma.

[0300] Figure 24 (a) illustrates the output current i flowing through the antenna module (or load) when an AC voltage is applied to the antenna module 2030 via a first power supply P1 starting from a first time point t1, according to an embodiment of the method for controlling the element 2000 for generating plasma. RF .about Figure 24 (a) can be similarly applied to the reference. Figure 18 (a) describes the content.

[0301] A method for controlling the plasma-generating element 2000 may include: generating a high-voltage pulse to induce plasma generation when no plasma is generated by the AC voltage for a predetermined time, and gradually shortening the application time of the high-voltage pulse to minimize damage to the element and the generation of byproducts. The operation of applying the high-voltage pulse, unless otherwise specifically stated, can be similarly applied as described in the reference. Figure 18 The content explained.

[0302] Reference Figure 24(b) According to an embodiment, the method of controlling the element 2000 for generating plasma may include: applying a first unit pulse UP1 to the electrode 2050 at a second time point t2 after a predetermined time PT from a first time point; applying a second high-voltage pulse UP2 to the electrode at a third time point t3 after a first time interval PT1 from the second time point t2; and applying a third high-voltage pulse UP3 to the electrode at a fourth time point after the second time interval PT2 from the third time point t3. In this document, the second time interval PT2 may be shorter than the first time interval PT1.

[0303] A method for controlling an element 2000 for generating plasma according to an embodiment may include: applying a first unit pulse UP1 to an electrode 2050 at a second time point t2; obtaining sensing information indicating the state of the plasma at a first time interval PT1 after the second time point t2; determining, based on the sensing information, whether a predetermined condition is met; and when the predetermined condition is not met (i.e., when no plasma is generated), applying a second unit pulse UP2 to the electrode 2050 at a third time point t3. The method for controlling the element 2000 for generating plasma may further include: obtaining sensing information indicating the state of the plasma at a second time interval PT2 after the third time point t3; determining, based on the sensing information, whether a predetermined condition is met; and when the predetermined condition is not met, applying a third unit pulse UP3 to the electrode 2050 at a fourth time point t4.

[0304] Regarding references Figure 24 The method described for controlling the plasma-generating element 2000 can be similarly applied to stopping the application of pulses. (See also...) Figure 24 (b) The method of controlling the element 2000 for generating plasma may include: obtaining sensing information related to plasma generation after applying a third unit pulse UP3 (e.g., at a fifth time point t5); and stopping the application of a high-voltage pulse to the electrode 2050.

[0305] At the same time, Figure 24In (b), an embodiment in which the time interval between individual unit pulses is varied is described, but the invention set forth in this disclosure is not limited thereto. For example, a method for controlling an element 2000 for generating plasma according to an embodiment may include gradually reducing the time period of a high-voltage pulse applied to an electrode 2050 until plasma generation is detected. In other words, the method for controlling the element 2000 for generating plasma may further include: applying one or more unit high-voltage pulses to the electrode 2050 during a first time period; obtaining sensing information in response to the application of the one or more unit high-voltage pulses during the first time period; and applying one or more high-voltage pulses to the electrode 2050 during a second time period shorter than the first time period in which no plasma was generated.

[0306] 2.4 RF signal modulation

[0307] According to an embodiment, the components for generating plasma can control the RF power supply based on sensing information and predetermined conditions. The components for generating plasma can control the power output through the RF power supply according to the plasma conditions (e.g., whether plasma ignition (or generation) is performed).

[0308] As a specific example, the plasma-generating element induces an initial discharge by applying an RF voltage to the antenna module, and if no initial discharge (or ignition) occurs within a predetermined time, the magnitude of the current supplied by the RF power supply is increased in stages. For instance, if no initial discharge (or ignition) occurs within a predetermined time from the start of applying the RF voltage to the antenna module, the plasma-generating element changes the intensity of the RF voltage applied to the antenna module in stages.

[0309] When the initial discharge (or ignition) occurs, the components used to generate plasma no longer increase the RF voltage, thereby preventing excessive voltage from being applied to the antenna module.

[0310] As another specific example, after an RF voltage is applied to the antenna module for a predetermined time, the element used to generate plasma determines whether predetermined conditions related to plasma generation are met, and changes the output state of the RF voltage when the conditions are not met (i.e., when no plasma is generated). For example, the element used to generate plasma or its controller is configured to: output a first power supply by applying an RF voltage to the antenna module via a first power supply starting from a first time point; and output a second power supply larger than the first power supply by applying an RF voltage to the antenna module via the first power supply when the sensing information does not meet the predetermined conditions at a second time point after the first time point. Outputting a second power supply larger than the first power supply by applying an RF voltage to the antenna module using the element used to generate plasma may include increasing the amount of the RF voltage starting from the second time point.

[0311] According to an embodiment, the element for generating plasma changes the frequency of the output RF current (or RF voltage) if no initial discharge (or ignition) occurs within a predetermined time period from the start of applying an RF voltage to the antenna module. The element for generating plasma can increase the frequency of the RF current (or RF voltage). The element for generating plasma can change the frequency of the RF current (or RF voltage) based on the phase difference between the RF voltage and RF current applied to the antenna module. The element for generating plasma can change the frequency of the RF current (or RF voltage) such that the phase difference between the RF voltage and RF current applied to the antenna module decreases.

[0312] As a specific example, after applying an RF voltage to the antenna module for a predetermined time, the element used to generate plasma determines whether predetermined conditions related to plasma generation are met, and changes the output frequency of the RF power supply if the conditions are not met. For example, the element used to generate plasma or its controller is configured to: provide the antenna module with an RF power supply using a first frequency as the driving frequency through a first power supply starting from a first time point; and change the driving frequency to a second frequency if the predetermined conditions are not met at a second time point after the first time point. The second frequency may be higher than the first frequency. The element used to generate plasma maintains the driving frequency of the RF power supply during the initial discharge (or ignition).

[0313] 2.4.1 Example 4

[0314] According to an embodiment, an element for generating plasma is provided, wherein the element applies an RF voltage to an antenna module to obtain sensing information related to the state of the plasma, and applies a high-voltage pulse to electrodes when the sensing information does not meet predetermined conditions. According to an embodiment, a method for controlling the element for generating plasma may include applying a high-voltage pulse to electrodes when no plasma generation is detected.

[0315] Figure 25 This is a diagram illustrating a method for controlling elements used to generate plasma according to an embodiment.

[0316] Reference Figure 25 The method for controlling the elements used to generate plasma according to the embodiment may include: after obtaining sensing information related to the state of the plasma at step S130 as described above, determining at step S181 whether the sensing information meets a predetermined condition; and when the sensing information does not meet the predetermined condition, increasing the value of the RF voltage at step S182.

[0317] Methods for controlling elements used to generate plasma may include: periodically acquiring sensing information; determining whether the acquired sensing information meets predetermined conditions; and increasing the magnitude (maximum or effective value) of the voltage output from the RF power supply when the sensing information does not meet predetermined conditions.

[0318] Reference Figure 25 A method for controlling the components used to generate plasma may include repeatedly performing the following steps: when the sensing information does not meet a predetermined condition, applying an AC voltage to the antenna module and obtaining sensing information; determining at step S181 whether the obtained sensing information meets the predetermined condition; and when the obtained sensing information does not meet the predetermined condition, increasing the voltage of the RF power supply at step S182.

[0319] Figure 26 This is a diagram illustrating the output of RF current and high-voltage pulses according to an embodiment of a method for controlling elements used to generate plasma.

[0320] Reference Figure 26 The method for controlling the elements for generating plasma according to the embodiment may further include: after obtaining sensing information related to the state of the plasma at step S130 as described above, determining at step S183 whether the sensing information meets a predetermined condition; when the sensing information does not meet the predetermined condition, applying a first-value RF voltage to the load at step S184; after applying the first-value RF voltage to the load, determining at step S185 whether the sensing information meets the predetermined condition; and when the sensing information does not meet the predetermined condition, applying a second-value RF voltage to the load at step S186.

[0321] Reference Figure 26 A method for controlling an element for generating plasma according to an embodiment may include: obtaining first sensing information at a first time point at step S130; determining at step S183 whether the obtained first sensing information satisfies a predetermined condition; when the obtained first sensing information does not satisfy the predetermined condition, applying a first-value AC voltage to an antenna module through a first power supply at step S184; obtaining (not shown) second sensing information at a second time point after the first time point; determining at step S185 whether the obtained second sensing information satisfies a predetermined condition; and when the second sensing information does not satisfy the predetermined condition, applying a second-value AC voltage larger than the first value to the antenna module through the first power supply at step S186.

[0322] Figure 27 This is a diagram illustrating the output current and high-voltage pulse output according to a method for controlling an element 2000 for generating plasma, as described in an embodiment. Referring below... Figure 15The element 2000 shown illustrates a method for controlling the element 2000 for generating plasma.

[0323] about Figure 27 The current i of the antenna module 2030 shown in (a) and (b) RF and high voltage pulse V ig Unless otherwise specified, references may be applied similarly. Figure 18 The content described in (a) and (b).

[0324] Reference Figure 27 (a) According to an embodiment, the method for controlling the element 2000 for generating plasma may include sequentially increasing the magnitude of the AC voltage applied to the antenna module 2030 through a first power supply P1. As the intensity of the voltage applied to the antenna module 2030 increases, the current i of the antenna module increases. RF The measurement intensity increases. In the following text, reference will be made to... Figure 27 (a) describes a method for controlling the element 2000 used to generate plasma by changing the magnitude of the AC voltage.

[0325] A method for controlling an element 2000 for generating plasma according to an embodiment may include: applying an AC voltage having a first voltage as a maximum voltage to an antenna module 2030 starting from a first time point t1; and applying an AC voltage having a second voltage as a maximum voltage to the antenna module 2030 starting from a second time point t2.

[0326] A method for controlling the element 2000 used to generate plasma may include changing the magnitude of the AC voltage applied to the antenna module 2030 via a first power supply P1 based on whether plasma is generated.

[0327] For example, a method for controlling the plasma-generating element 2000 according to an embodiment may include: applying an AC voltage having a first voltage as its maximum voltage to the antenna module 2030 starting from a first time point t1; and obtaining sensing information indicating the state of the plasma between the first time point t1 and a second time point t2 in response to the application of the AC voltage having the first voltage as its maximum voltage to the antenna module 2030. The method for controlling the plasma-generating element 2000 may further include: when the sensing information obtained between the first time point t1 and the second time point t2 indicates that no plasma is generated, applying an AC voltage having a second voltage as its maximum voltage to the antenna module 2030 starting from the second time point. The second voltage may be higher than the first voltage. Therefore, the current i flowing through the antenna module 2030 after the second time point... RF The maximum value (or effective value) may have a greater current i than the current i flowing through the antenna module 2030 before the second time point. RFThe largest value (or valid value) is the largest value.

[0328] The second time point t2 can be located after the third time interval PT3 starting from the first time point t1. The third time interval PT3 can be an integer multiple of the period (or half-cycle) of the AC voltage applied by the first power supply P1.

[0329] Reference Figure 27 (a) At the third and fourth time points after the second time point, the AC voltage (and the current i according to its antenna module 2030) RF The above embodiments can be modified in a similar manner. The third time point t3 may be after the third time interval PT3 starting from the second time point t2, and the fourth time point t4 may be after the third time interval PT3 starting from the third time point t3.

[0330] Reference Figure 27 (b) The method of controlling the element 2000 for generating plasma may further include applying a high-voltage pulse to the electrode 2050 while maintaining the strength of the voltage applied to the antenna module 2030 after a predetermined time PT has elapsed.

[0331] The method of controlling the element 2000 for generating plasma may further include increasing the intensity of the voltage applied to the antenna module 2030 through the first power supply P1 in stages for a predetermined time PT, but when no plasma is generated within the predetermined time PT, applying a high voltage pulse to the electrode 2050 through the second power supply P2.

[0332] For example, refer to Figure 27 (b) The method of controlling the element 2000 for generating plasma may include applying a high-voltage pulse to the electrode 2050 using a second power supply P2 at a fifth time point t5 after a fourth time point t4. The fifth time point t5 may be after a third time interval PT3 from the fourth time point t4. The method of controlling the element 2000 for generating plasma may further include using a reference to Figure 18 , Figure 21 and Figure 24 The method described is similar, controlling the second power supply P2 after the fifth time point t5.

[0333] 2.5 Composite Control

[0334] The embodiments for adjusting whether to apply a high-voltage pulse or adjust the intensity of the voltage applied by the RF AC power supply based on changes in plasma conditions have been described above, but the content of the present invention as described herein is not limited thereto.

[0335] For example, refer to Figure 27The plasma-generating element in the illustrated embodiment can be adjusted to apply a high-voltage pulse, an application interval, or the intensity of the high-voltage pulse via a second power supply P2 after a predetermined time PT, as referred to above. Figure 18 , Figure 21 or Figure 24 As illustrated in the embodiments.

[0336] As a specific example, a method for controlling elements used to generate plasma according to an embodiment may include assisting plasma discharge by adjusting the intensity and interval of high-voltage pulses. For example, the method for controlling elements used to generate plasma may include: applying an AC voltage to an antenna module starting from a first time point; applying a first high-voltage pulse of a first voltage to electrodes at a second time point when no plasma generation is detected after the first time point and before a second time point; applying a second high-voltage pulse of a second voltage higher than the first voltage to electrodes at a third time point when no plasma generation is detected after the second time point and before a third time point; and applying a third high-voltage pulse of a third voltage higher than the second voltage to electrodes at a fourth time point when no plasma generation is detected after the third time point and before a fourth time point. In this document, the time interval between the second and third time points may be longer than the time interval between the third and fourth time points.

[0337] As another specific example, a method for controlling elements used to generate plasma according to an embodiment may include assisting plasma discharge by adjusting the intensity (or interval) of a high-voltage pulse and the intensity of an RF power supply. For example, a method for controlling elements used to generate plasma may include: increasing the magnitude of the voltage output from an AC power supply in stages between a first time point and a second time point; and increasing the magnitude of the voltage of a high-voltage pulse generated by a pulse generator in stages after the second time point.

[0338] 3. Detection of plasma generation

[0339] The foregoing has described elements for generating plasma and methods for controlling said elements according to several embodiments, wherein said elements and methods control a high-voltage pulse or AC voltage based on the plasma condition to efficiently assist plasma generation and suppress the generation of byproducts.

[0340] According to the above embodiments, in order to efficiently suppress the generation of byproducts, detecting changes in plasma conditions needs to be a prerequisite for controlling the power supply (high voltage pulse or AC voltage).

[0341] In the following sections, means or methods for detecting changes in plasma conditions according to several embodiments will be described.

[0342] 3.1 Detection of power supply changes

[0343] According to an embodiment, an element for generating plasma is provided, wherein the element includes a sensor that obtains sensing information related to the power supplied to the load based on changes in power information transmitted to the load according to whether plasma is generated, and the element detects whether plasma is generated based on changes in the power supplied to the load and controls the operation of the power supply accordingly.

[0344] In the following, elements for generating plasma or methods for controlling said elements according to several embodiments will be described, said elements and methods controlling the power supply based on power supply changes.

[0345] Figure 28 This is a diagram illustrating an element 2100 for generating plasma according to an embodiment, the element including a sensor.

[0346] Reference Figure 28 The plasma-generating element 2100 according to an embodiment may include a chamber 2110, an antenna module 2130, an electrode 2150, a sensor 2170, and a controller 2190. For each configuration and operation of the plasma-generating element 2100, an analogous application can be used... Figure 15 The contents of the component 2000 shown are illustrated.

[0347] Reference Figure 28 Sensor 2170 can obtain sensing information from the first power supply P1 and can transmit the obtained information to controller 2190. Controller 2190 can control the first power supply P1 and / or the second power supply P2 based on the information obtained through sensor 2170.

[0348] Figure 29 This is a simplified circuit diagram illustrating an element for generating plasma according to an embodiment, the element including a sensor.

[0349] Reference Figure 29 The components for generating plasma according to the embodiment may include: a first power supply P1, a sensor 2171 located in the first power supply P1, and the first power supply P1 including a DC power supply V. DD and an inverter; a controller 2191; a second power supply P2, including a high-voltage pulse generator; an electrode 2151; and a variable load.

[0350] The inverter of the first power supply P1 can switch according to the switching signal (S). A S B S C and S D Operate according to the switching signal (S). A S B SC and S D The inverter can be based on a DC power supply V. DD Provide AC voltage V to the load RF .

[0351] The high-voltage pulse generator of the second power supply P2 can generate pulses according to the pulse control signal S. P It can be operated and a high voltage pulse can be applied to electrode 2151.

[0352] A variable load is a load whose value changes according to the reactance and inductance caused by the plasma generated inside the antenna module and cavity.

[0353] Sensor 2171 can be located at DC power supply V DD The sensor 2171 obtains sensing information related to the power supply delivered to the load, which is connected to the inverter. DD The output voltage and / or current. Sensor 2171 can obtain the voltage and / or current and can transmit the voltage and / or current to controller 2191. Sensor 2171 can obtain the power supply quantity P determined based on the voltage and / or current. ref And the power supply P can be increased ref The signal is transmitted to controller 2191. Sensor 2171 may include a voltmeter and / or an ammeter.

[0354] Controller 2191 can generate a switching signal (S) A S B S C and S D The controller 2191 can generate a switching signal (S). A S B S C and S D ), so as to apply AC voltage to the load (or antenna module) through the first power supply P1.

[0355] Controller 2191 can generate pulse control signal S P The controller 2191 can generate a pulse control signal S. P A high-voltage pulse is applied to electrode 2151 via the second power supply P2.

[0356] Controller 2191 can control the high-voltage pulse generator of the second power supply P2 based on sensing information obtained through sensor 2171, so as to apply a high-voltage pulse V to electrode 2151. ig The controller 2191 can generate a pulsed control signal S based on the sensing information obtained through the sensor 2171. P The controller 2191 can adjust the high-voltage pulse V applied to the electrode 2151 based on sensing information obtained through the sensor 2171.ig The magnitude and / or time period. The controller 2191 can adjust the magnitude of the AC voltage applied to the antenna module based on the sensing information obtained by the sensor 2171.

[0357] For example, when sensing information is obtained and the sensing information does not meet predetermined conditions, the controller 2191 generates a pulse control signal S. P A high-voltage pulse is applied to electrode 2151.

[0358] Additionally, for example, when sensing information is obtained and the sensing information meets predetermined conditions, the controller 2191 does not apply a high-voltage pulse to the electrode 2151.

[0359] Additionally, for example, when sensing information that is periodically acquired but has not yet met a predetermined condition is satisfied, the controller 2191 stops generating the pulse control signal S. P And after obtaining the sensing information that meets the conditions, the application of high voltage pulses to electrode 2151 is stopped.

[0360] Additionally, for example, when sensing information that has been periodically acquired and has met predetermined conditions no longer meets those conditions, the controller 2191 generates a pulse control signal S. P A high-voltage pulse is applied to electrode 2151 after the point in time when sensing information that does not meet the conditions is obtained.

[0361] Determining whether the sensed information meets predetermined conditions by controller 2191 may include determining whether the sensed information meets conditions related to plasma generation. Determining whether predetermined conditions are met by controller 2191 may include comparing the value obtained by sensor 2171 with a reference value. Here, the reference value may be a value used to determine the plasma generation status. For example, the reference value may be a threshold value or threshold section used to determine whether plasma is generated when the sensed value is equal to or greater than the reference value, or to determine whether plasma is not generated when the sensed value is equal to or less than the reference value.

[0362] As a specific example, the controller 2191 can obtain power information P from the sensor 2171. ref And it can be based on power information P refThe controller 2191 determines whether the power supplied from the first power source P1 to the load is equal to or greater than a reference value. The controller 2191 can determine whether to perform plasma discharge based on whether the power supplied from the first power source P1 to the load is equal to or greater than the reference value. The controller 2191 can obtain a power value indicating plasma generation (or a power value equal to or greater than the reference value) and can perform operations corresponding to the situation where predetermined conditions are met. Alternatively, the controller 2191 can obtain a power value indicating no plasma generation (or a power value less than the reference value) and can perform operations corresponding to the situation where predetermined conditions are not met.

[0363] Figure 30 The diagram illustrates a power supply signal and a control signal based on a high-voltage pulse that changes according to a power supply signal in an element for generating plasma according to an embodiment, the element including a sensor.

[0364] Figure 30 (a) and (b) show that in Figure 28 or Figure 29 The current i flowing through the load in the element shown for generating plasma RF Pulse control signal S p and the pulse control signal S p High voltage pulse V applied to the voltage ig Changes over time.

[0365] Reference Figure 30 In (a) and (b), the components used to generate plasma can be generated from the first time point t. on An AC voltage is applied to the antenna module, and a high-voltage pulse can be applied to the electrodes. The components used to generate plasma receive a power signal, and when plasma discharge is detected based on the power signal (at t...), the plasma discharge is activated. ig When (generated at the location), stop t. off Apply a high-voltage pulse.

[0366] Reference Figure 30 (a) According to the embodiment, the element for generating plasma can generate plasma from the time point t when plasma discharge is generated. ig Stop t after 98 milliseconds. off Apply a high-voltage pulse. (Refer to...) Figure 30 (b) According to the embodiment, the element for generating plasma can generate plasma from the time point t when plasma discharge is generated. ig Stop t after 960 milliseconds. off Apply a high-voltage pulse.

[0367] 3.2 Detection of Phase Transition

[0368] Meanwhile, during the period from plasma generation to the cessation of high-voltage pulse application (or other plasma discharge-assisted operations) based on plasma generation, high-voltage pulses are applied to the electrodes despite plasma generation. This leads to unnecessary power waste and plasma collisions with the chamber walls, resulting in damage to components and impurity generation.

[0369] Therefore, by minimizing the time delay, damage to the equipment or the generation of contaminants can be suppressed as much as possible. However, in cases where the power supply is used as sensing information based on plasma generation, the delay time from the occurrence of a power supply change to the achievement of power supply control in response to the power supply change can be relatively long due to the time spent removing noise from the voltage or current signal. The delay time can be further reduced by controlling the power supply operation based on the phase difference between the voltage and current measured at the antenna module, rather than by using a power supply change.

[0370] In the following, as a method for reducing time delay, elements for generating plasma or methods for controlling said elements according to several embodiments will be described, said elements and methods controlling the operation of a first power supply or a second power supply based on the phase difference between voltage and current applied to an antenna module (or load).

[0371] Figure 31 This is a diagram illustrating an element 2200 for generating plasma according to an embodiment, the element including a sensor.

[0372] Reference Figure 31 The plasma-generating element 2200 according to an embodiment may include a chamber 2210, an antenna module 2230, an electrode 2250, a sensor 2270, and a controller 2290. For each configuration and operation of the plasma-generating element 2200, an analog application can be used... Figure 15 The contents of the component 2000 shown are illustrated.

[0373] Reference Figure 31 Sensor 2270 can obtain sensing information from antenna module 2230 (or load) and can transmit the obtained information to controller 2290. Controller 2290 can control first power supply P1 and / or second power supply P2 based on the information obtained by sensor 2270. Sensor 2270 can obtain sensing information including at least one selected from the group of current flowing through antenna module 2230 (or load), phase of the current, voltage applied to antenna module 2230 (or load), and phase of the voltage. Sensor 2270 can transmit the sensing information to controller 2290.

[0374] Figure 32This is a simplified circuit diagram illustrating an element for generating plasma according to an embodiment, the element including a sensor.

[0375] Reference Figure 32 The components for generating plasma according to the embodiments may include: a first power supply P1, including a DC power supply V. DD Including an inverter; a controller 2291; a second power supply P2, including a high-voltage pulse generator; an electrode 2251; a sensor 2271 for obtaining the current flowing through the load; and a variable load. (About...) Figure 32 The components shown for generating plasma are referenced. Figure 29 The content described can be similarly applied to DC power supply V. DD The system includes a first power supply P1, a controller 2291, a second power supply P2, an electrode 2251, and a variable load.

[0376] Reference Figure 32 According to an embodiment, the element for generating plasma may include a sensor 2271, which receives the current i flowing through the antenna module (or load). RF or current i RF The phase of the sensor. Sensor 2271 may include a current transformer, a filter, and a comparator.

[0377] Sensor 2271 may be located near a load or connected to an antenna module, and can obtain the current i flowing through the antenna module (or load). RF Or current i RF The phase of the current. Sensor 2271 can obtain the current i. RF or current i RF The phase and can make the current i RF or current i RF The phase is transmitted to the controller 2291.

[0378] The controller 2291 can control the first power supply P1 or the second power supply P2 based on sensing information obtained through the sensor 2271. The controller 2291 can obtain the current i through the sensor 2271. RF or current i RF The phase of the current i can be used to determine the current i. RF or current i RF Whether the phase meets the predetermined conditions and can control the first power supply P1 or the second power supply P2.

[0379] At the same time, whether plasma is generated can be determined based on the current i flowing through the load. RF With the voltage V applied to the load RFThe phase difference between them is used to determine this. For example, according to an embodiment, when no plasma discharge occurs inside the cavity, when an AC voltage V is applied to the antenna module... RF At that time, the current i flowing through the antenna module RF It can have the same voltage V applied to the antenna module. RF The phases are almost identical. When a plasma discharge occurs inside the cavity, and an AC voltage V is applied to the antenna module... RF At that time, the current i flowing through the antenna module RF It can have the same voltage V applied to the antenna module. RF Different phases.

[0380] The controller 2291 can base its actions on the current i flowing through the load. RF With the voltage V applied to the load RF The phase difference between them is used to control the first power supply P1 or the second power supply P2.

[0381] The controller 2291 can switch the signal (S) output by the inverter. A S B S C and S D The voltage V applied to the load is obtained. RF or voltage V RF The phase of the current. Controller 2291 can obtain the current i through sensor 2271. RF or current i RF The phase and can be based on the voltage V applied to the load. RF With the current i flowing through the load RF The phase difference between them is used to control the first power supply P1 or the second power supply P2.

[0382] The controller 2291 may determine whether the sensing information meets the predetermined conditions by judging the current i. RF Whether the information meets the conditions related to plasma generation. The controller 2291 determines whether the predetermined conditions are met, which may include obtaining the current i flowing through the load via sensor 2271. RF The phase of, and the current i flowing through the load. RF The phase of the voltage V applied to the load RF The phase is compared. The controller 2291 determines whether the sensed information meets predetermined conditions, which may include determining the current i flowing through the load. RF The phase of the voltage V applied to the load RF Whether the phase difference between the phases is equal to or greater than the reference value.

[0383] To control the first power supply P1 and / or the second power supply P2 based on whether plasma discharge is performed, the controller 2291 determines the current i flowing through the load.RF The phase of the voltage V applied to the load RF Whether the phase difference between the phases is equal to or greater than the reference value, and whether the discharge-assisted operation is not performed when the phase difference is equal to or greater than the reference value (i.e., plasma discharge is generated), or whether the discharge-assisted operation is performed when the phase difference is equal to or less than the reference value (i.e., plasma discharge is not generated).

[0384] Controller 2291 determines the current i flowing through the load. RF The phase of the voltage V applied to the load RF Whether the phase difference between the phases is equal to or greater than the reference value, and when the phase difference is greater than the reference value, a high voltage pulse is not applied to electrode 2251 through the second power supply P2.

[0385] Regarding determining whether the sensed information meets predetermined conditions, the controller 2291 determines the current i flowing through the load. RF The phase of the voltage V applied to the load RF Whether the phase difference between the phases is equal to or greater than the reference value, and when the phase difference is less than the reference value, a high voltage pulse is applied to electrode 2251 through the second power supply P2.

[0386] Figure 33 This is a simplified circuit diagram illustrating elements for generating plasma according to an embodiment, said elements including a sensor. About Figure 33 The components shown for generating plasma can be similarly applied to the reference. Figure 29 and Figure 32 The content explained.

[0387] Reference Figure 33 According to an embodiment, the element for generating plasma may include a sensor 2273, which receives the current i flowing through the antenna module (or load). RF or current i RF The phase of the sensor. Sensor 2273 may include a filter, a comparator, and a sensing resistor R connected in series with the antenna module (or load). SEN The sensor 2273 can measure the sensing resistor R. SEN The voltage is used to obtain the current i flowing through the antenna module (or load). RF or current i RF The phase.

[0388] Meanwhile, in the above embodiments, a description is given regarding the case where the controller obtains the phase of the voltage applied to the antenna module from the switching signal, but this is not a necessary configuration. The elements for generating plasma described in this disclosure may also include a sensor for obtaining the phase of the voltage applied to the antenna module. Hereinafter, sensors according to several embodiments that obtain the phase of the voltage applied to the antenna module will be described.

[0389] Figure 34 This is a simplified circuit diagram illustrating elements for generating plasma according to several embodiments, the elements including sensors. Figure 34 Figures (a), (b), and (c) are diagrams illustrating an apparatus for generating plasma, the apparatus including obtaining a voltage V applied to an antenna module. RF The corresponding sensors for the phase (2275, 2277 and 2279).

[0390] Reference Figure 34 (a) According to an embodiment, sensor 2275 may include a resistor divider circuit connected to opposite ends of the antenna module. Sensor 2275 can obtain the voltage V applied to the antenna module via the resistor divider circuit. RF The phase. The sensor 2275 may further include filters and / or comparators as needed.

[0391] Reference Figure 34 (b) According to the embodiment, sensor 2277 may include a capacitor divider circuit connected to opposite ends of the antenna module. Sensor 2277 can obtain the voltage V applied to the antenna module via the capacitor divider circuit. RF The phase. The sensor 2277 may further include filters and / or comparators as needed.

[0392] Reference Figure 34 (c) According to the embodiment, sensor 2279 may include a transformer connected to opposite ends of the antenna module. Sensor 2279 can obtain a voltage V applied to the antenna module via the transformer. RF The phase. The sensor 2279 may further include filters and / or comparators as needed.

[0393] At the same time, despite Figure 34 Not shown, however, each device for generating plasma may include a controller, a second power supply, and electrodes. The controller may obtain the voltage V applied to the antenna module via each sensor (2275, 2277, or 2279). RF The phase, and can be based on the current i flowing through the antenna module. RF The phase of the voltage V applied to the antenna moduleRF The phase difference between the phases is used to control the operation of the inverter and / or high-voltage pulse generator.

[0394] Figure 35 (a) and (b) show that in Figure 31 The current i flowing through the load in the element shown for generating plasma RF Pulse control signal S p and the high voltage pulse V applied to the voltage ig Changes over time.

[0395] Figure 35 The diagram illustrates a control signal for a high-voltage pulse that changes based on the phase difference between a voltage applied to an antenna module and a current flowing through the antenna module in an element for generating plasma according to an embodiment, the element including a sensor.

[0396] Figure 35 (a) and (b) show that in Figure 28 or Figure 29 The current i flowing through the load in the element shown for generating plasma RF Pulse control signal S p and the pulse control signal S p High voltage pulse V applied to the voltage ig Changes over time.

[0397] Reference Figure 35 In (a) and (b), the components used to generate plasma can be generated from the first time point t. on An AC voltage is initially applied to the antenna module, and a high-voltage pulse can be applied to the electrodes. The components used to generate plasma acquire the phase of the voltage applied to the antenna module and the phase of the current flowing through the antenna module, and plasma discharge is detected when a signal based on the phase difference is received (at t). ig Stop t when generated at the location off A high-voltage pulse is applied. For example, when the phase difference exceeds a reference value, the components used to generate the plasma stop. off Apply a high-voltage pulse.

[0398] Reference Figure 35 (a) According to the embodiment, the element for generating plasma can generate plasma from the time point t when plasma discharge is generated. ig Stop t after 0.8 milliseconds. off Apply a high-voltage pulse. (Refer to...) Figure 30 (b) According to the embodiment, the element for generating plasma can generate plasma from the time point t when plasma discharge is generated. ig Stop t after 0.6 milliseconds. off Apply a high-voltage pulse.

[0399] Reference Figure 35 (a), (b) and Figure 30 In (a) and (b), it was found that t was generated spontaneously. ig Plasma discharge until it stops t off The timing of applying a high-voltage pulse is determined by the phase difference between the current and voltage of the antenna module, in cases where the high-voltage pulse is stopped. Figure 35 Compared to the case where high-voltage pulses are stopped being applied based on power consumption ( Figure 30 Short. That is, by stopping t based on the phase difference. off Applying a high-voltage pulse generates t ig Plasma discharge until it stops t off The duration of the applied high-voltage pulse is minimized, thereby minimizing damage to components or the generation of unwanted particles.

[0400] As described in the above embodiments, multiple antenna modules with different discharge characteristics are used to selectively perform plasma discharge according to various discharge environments. An element for generating plasma is provided, which uses multiple antenna modules to perform plasma discharge, thereby enabling discharge in various environments.

[0401] Although embodiments have been described and illustrated, various modifications and variations can be made by those skilled in the art based on the above description. For example, even if the described techniques are implemented in a different order than the described methods, and / or the components of the described systems, structures, devices, and circuits are coupled or combined in a different form than the described methods, or are replaced or substituted by other components or equivalents, suitable results can be achieved.

[0402] Therefore, other embodiments, examples, and equivalents of the claims are also within the scope of the following claims.

Claims

1. An apparatus for generating plasma, comprising: A chamber is configured to provide space for generating the plasma; The first power supply is configured to output radio frequency voltage; The second power supply is configured to output a pulsed DC voltage. An antenna module is placed adjacent to the cavity and surrounds the outer surface of the sidewall of the cavity, and is configured to be connected to the first power source such that when the radio frequency voltage is supplied to the antenna module from the first power source, an induced electric field can be generated in the cavity. An electrode is placed on the chamber and configured to be connected to the second power source such that when the second power source supplies a voltage difference between the electrode and the counter electrode, electrons can be supplied into the chamber. The sensor is configured to acquire sensing information related to the state of the plasma; as well as The controller is configured to control the first power supply and the second power supply. The controller, used for igniting the plasma in the chamber, is further configured to: The first power supply is controlled to output the radio frequency voltage to the antenna module to ignite the plasma, while the pulsed DC voltage is not supplied to the electrodes from the second power supply. While maintaining the output of the radio frequency voltage from the first power source to the antenna module, the sensing information related to the state of the plasma is obtained. Determine whether the obtained sensing information meets predetermined conditions. When the obtained sensing information indicates that the plasma has been successfully ignited, it is determined that the obtained sensing information meets the predetermined condition. When it is determined that the sensing information does not meet the predetermined condition, a first pulse DC voltage is supplied from the second power source to the electrode, while the radio frequency voltage is maintained from the first power source to the load including the antenna module. When it is determined that the sensing information meets the predetermined conditions, the radio frequency voltage is maintained from the first power source to the load including the antenna module, while the pulsed DC voltage is not supplied from the second power source to the electrode.

2. The apparatus according to claim 1, The sensing information indicates the power supplied from the first power source to the load including the antenna module.

3. The apparatus according to claim 2, The controller is configured to determine that plasma ignition has failed if the power supplied to the load, including the antenna module, is less than a reference power supply. The controller is configured to determine that the plasma ignition was successful if the power supplied to the load including the antenna module is greater than or equal to the reference power.

4. The apparatus according to claim 2, The first power source includes a DC power supply and an inverter, wherein the inverter is configured to convert the DC power supply from the DC power supply into an radio frequency power supply. The sensor is placed between the DC power supply and the inverter. The sensor is configured to receive a first voltage output from the DC power supply and a first current output from the DC power supply. The controller is configured to determine whether the acquired sensing information satisfies the predetermined conditions based on the power supplied to the load including the antenna module. The power source is determined based on the first voltage and the first current.

5. The apparatus according to claim 1, The sensor is configured to obtain the sensing information based on a second current flowing through the antenna module.

6. The apparatus according to claim 5, The controller is configured to determine that the plasma ignition was unsuccessful if the sensing information indicates that the phase difference between the second current and the radio frequency voltage does not meet the predetermined condition. The controller is configured to determine that the plasma ignition is successful if the sensing information indicates that the phase difference between the second current and the radio frequency voltage meets the predetermined condition.

7. The apparatus according to claim 1, The controller is further configured to: If the first pulsed DC voltage fails to ignite the plasma, then the second power supply outputs a second pulsed DC voltage higher than the first pulsed DC voltage, or If the first pulsed DC voltage ignites the plasma, the second power supply is controlled to stop outputting the first pulsed DC voltage.

8. The apparatus according to claim 1, The controller is further configured to: If the first pulsed DC voltage fails to ignite the plasma, then the output voltage of the second power supply is controlled to be higher than the third pulsed DC voltage of the first pulsed DC voltage, or If the first pulsed DC voltage ignites the plasma, the second power supply is controlled to stop outputting the first pulsed DC voltage.

9. The apparatus according to claim 1, The controller is further configured to: If the first pulsed DC voltage fails to ignite the plasma, then the second power supply is controlled to output a fourth pulsed DC voltage with a period shorter than the first pulsed DC voltage, or If the first pulsed DC voltage ignites the plasma, the second power supply is controlled to stop outputting the first pulsed DC voltage.

10. The apparatus according to claim 1, The controller is further configured to: After applying the first pulsed DC voltage to the electrode, other sensing information related to the state of the plasma is obtained, and When the other sensing information meets the predetermined conditions, the supply of the first pulse DC voltage is stopped.

11. A method for controlling a plasma generating apparatus, wherein the plasma generating apparatus comprises: A chamber provides space for generating plasma; The first power supply is configured to output radio frequency voltage; The second power supply is configured to output a pulsed DC voltage. An antenna module is placed adjacent to the cavity and surrounds the outer surface of the sidewall of the cavity, and is configured to be connected to the first power source such that when the radio frequency voltage is supplied to the antenna module from the first power source, an induced electric field can be generated in the cavity. An electrode, placed on the chamber and configured to be connected to the second power source, allows electrons to be supplied into the chamber when the second power source supplies a voltage difference between the electrode and the counter electrode; a sensor is configured to acquire sensing information related to the state of the plasma. And a controller, configured to control the first power supply, the second power supply, and the sensor. The method includes: The controller controls the first power supply to output the radio frequency voltage to the antenna module to ignite the plasma, without supplying the pulsed DC voltage to the electrode from the second power supply. While maintaining the output of the radio frequency voltage from the first power source to the antenna module, the controller obtains the sensing information related to the state of the plasma; Determine whether the obtained sensing information meets predetermined conditions. Wherein, if the obtained sensing information indicates that the plasma has been successfully ignited, it is determined that the obtained sensing information meets the predetermined condition; When it is determined that the sensing information does not meet the predetermined condition, a first pulse DC voltage is supplied from the second power source to the electrode, while the radio frequency voltage is maintained from the first power source to the load including the antenna module; and When it is determined that the sensing information meets the predetermined conditions, the radio frequency voltage is maintained from the first power source to the load including the antenna module, while the pulsed DC voltage is not supplied from the second power source to the electrode.

12. The method according to claim 11, The sensing information indicates the power supplied from the first power source to the load including the antenna module. The controller is configured to determine that plasma ignition has failed if the power supplied to the load, including the antenna module, is less than a reference power supply. The controller is configured to determine that the plasma ignition was successful if the power supplied to the load including the antenna module is greater than or equal to the reference power.

13. The method according to claim 11, The sensing information indicates the power supplied from the first power source to the load including the antenna module. The first power source includes a DC power supply and an inverter, wherein the inverter is configured to convert the DC power supply from the DC power supply into an radio frequency power supply. The sensor is placed between the DC power supply and the inverter. The sensor is configured to receive a first voltage output from the DC power supply and a first current output from the DC power supply. Determining whether the obtained sensing information satisfies the predetermined conditions includes: Based on the load supplied to the antenna module, it is determined whether the obtained sensing information satisfies the predetermined condition, and The power source is determined based on the first voltage and the first current.

14. The method according to claim 11, The sensor is configured to obtain the sensing information based on a second current flowing through the antenna module. The controller is configured to determine that the plasma ignition was unsuccessful if the sensing information indicates that the phase difference between the second current and the radio frequency voltage does not meet the predetermined condition. The controller is configured to determine that the plasma ignition is successful if the sensing information indicates that the phase difference between the second current and the radio frequency voltage meets the predetermined condition.

15. The method according to claim 11, The controller is further configured to: If the first pulsed DC voltage fails to ignite the plasma, then the second power supply outputs a second pulsed DC voltage higher than the first pulsed DC voltage, or If the first pulsed DC voltage ignites the plasma, the second power supply is controlled to stop outputting the first pulsed DC voltage.

16. The method according to claim 11, The controller is further configured to: If the first pulsed DC voltage fails to ignite the plasma, then the second power supply is controlled to output a third pulsed DC voltage with a period shorter than the first pulsed DC voltage, or... If the first pulsed DC voltage ignites the plasma, the second power supply is controlled to stop outputting the first pulsed DC voltage.

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