Miniature gas detection system

Abstract

A miniature gas detection system includes: a separation flow path fabricated by a semiconductor process, comprising a main flow path and multiple detection flow paths, each detection flow path containing a monitoring chamber, and a microelectromechanical pump at the bottom of the monitoring chamber; a filler material disposed in the main flow path of the separation flow path to adsorb and separate the constituent compounds contained in the gas introduced into the main flow path; and a light source emitted by a light source emitting element in the monitoring chamber, which is then reflected by two mirrors and received by a light source detection element. The system utilizes the characteristic that the constituent compounds in the gas absorb different wavelengths of light differently, and the light source detection element receives and obtains the output spectrum of the constituent compounds in the gas for analysis to determine the types of constituent compounds contained in the gas.

Description

[Technical Field]

[0001] This case relates to a miniature gas detection system, and more particularly to a miniature gas detection system that uses semiconductor processes to produce a detection system for compounds contained in a gas. [Background Technology]

[0002] One method for analyzing gases is gas chromatography (GC). In organic chemistry, GC is a technique used to separate and purify volatile compounds with good thermal stability. It works by using the interaction of a mobile phase and a stationary phase to allow the components in the mixture to flow at different rates within the system, thereby achieving separation.

[0003] However, there are currently many models and types of gas chromatographs. Although their appearance and structure differ, they are generally composed of the following basic systems: gas path system, sample injection system, separation system, temperature control system, detection system, and recording system. This results in a relatively large instrument because the separation system relies on a chromatography column to separate the components of the sample; the chromatography column is the heart of the gas chromatograph. Since the efficiency of the chromatography column is related to its length, inner diameter, and film thickness, the longer the column and the smaller the inner diameter and film thickness, the better the analytical results. Therefore, gas chromatographs generally use very long chromatography columns, and currently, the chromatography column setup in gas chromatographs is still quite large and space-consuming.

[0004] In view of this, how to solve the problem of setting the length of the chromatography column in a gas chromatography analyzer to achieve the purpose of gas chromatography separation, replace the chromatography column, and also achieve measurement and use anytime and anywhere is the research topic to be developed in this case. [Summary of the Invention]

[0005] The main objective of this invention is to provide a miniature gas detection system, comprising: a separation flow path fabricated using a semiconductor process, including a main flow path and multiple detection flow paths, wherein the main flow path guides a gas for detection, and the multiple detection flow paths are connected to the main flow path; a monitoring chamber is generated in each detection flow path, and a light source emitting element is generated on one side of the monitoring chamber, a light source detection element is stacked and positioned, and a reflector is generated on each side of the monitoring chamber corresponding to each other; finally, a microelectromechanical pump is generated and disposed at the bottom of the monitoring chamber; a filler material is disposed in the main flow path of the separation flow path to adsorb and separate the constituent compounds of the gas introduced into the main flow path; thereby, the gas is guided into the main flow path. The components contained in the flow path are adsorbed and separated by the filler material, and flow through the main flow path at different speeds to form different intervals. When the microelectromechanical pump in each detection flow path is started, it introduces the components contained in the gas in different intervals into the monitoring chamber of the corresponding detection flow path and maintains a certain amount. In the monitoring chamber, the light emitted by the light source emitting element illuminates the two reflectors and is projected onto the light source detection element for reception. By utilizing the characteristic that the components contained in the gas in the monitoring chamber absorb light of different wavelengths differently, the light source detection element receives the output spectrum of the components contained in the gas to obtain the spectrum, and analyzes and determines the type of components contained in the gas. [Attached Image Description]

[0006] Figures 1A to 1B This is a schematic diagram of the miniature gas detection system in this case.

[0007] Figures 2A to 2C This is a schematic diagram of the filler material in the main path of the miniature gas detection system in this case.

[0008] Figure 3A and Figure 3B This is a schematic diagram of the opening and closing operation of the valve element in the miniature gas detection system of this case.

[0009] Figure 4A This is an exploded view of the piezoelectric pump in the miniature gas detection system of this case.

[0010] Figure 4B This is an exploded view of the piezoelectric pump in the miniature gas detection system of this case from another angle.

[0011] Figure 5A This is a cross-sectional schematic diagram of the piezoelectric pump in the miniature gas detection system of this case.

[0012] Figures 5B to 5D This is a schematic diagram of the operation of the piezoelectric pump in the miniature gas detection system of this case.

[0013] Figure 6A This is a three-dimensional exploded view of the piezoelectric blower of the miniature gas detection system in this case.

[0014] Figures 6B to 6D This is a schematic diagram of the operation of the piezoelectric blower of the miniature gas detection system in this case.

[0015] Figure 7A This is a cross-sectional schematic diagram of the microelectromechanical pump of the micro gas detection system in this case.

[0016] Figure 7B This is an exploded view of the microelectromechanical pump in the micro gas detection system of this case.

[0017] Figures 8A to 8C for Figure 7A A schematic diagram of the operation of the microelectromechanical pump in the micro gas detection system of this case.

[0018] [Symbol Explanation]

[0019] 1: Separate flow path

[0020] 11: Mainstream Road

[0021] 12: Detection Flow Path

[0022] 121: Monitoring Chamber

[0023] 122: Light source emitting element

[0024] 123: Light source detection element

[0025] 124, 125: Reflectors

[0026] 1a: Microelectromechanical pump

[0027] 11a: First substrate

[0028] 111: Inner wall surface

[0029] 111a: Inlet hole

[0030] 112a: First upper surface

[0031] 113a: First lower surface

[0032] 12a: First oxide layer

[0033] 121a: Combination Channel

[0034] 122a: Manifold Chamber

[0035] 13a: Second substrate

[0036] 131a: Silicon chip layer

[0037] 1311a: Actuator

[0038] 1312a: Peripheral part

[0039] 1313a: Connecting part

[0040] 1314a: Fluid Channel

[0041] 132a: Second oxide layer

[0042] 1321a: Gas chamber

[0043] 133a: Silicon layer

[0044] 1331a: Perforation

[0045] 1332a: Vibrating part

[0046] 1333a: Fixing part

[0047] 14a: Piezoelectric components

[0048] 141a: Lower electrode layer

[0049] 142a: Piezoelectric layer

[0050] 143a: Insulation layer

[0051] 144a: Upper electrode layer

[0052] 2: Filler material

[0053] 2a: Porous polymer

[0054] 2b: Molecular sieve materials

[0055] 2c: Filler carrier

[0056] 2d: Fixed liquid film

[0057] 3: Gas actuator

[0058] 3a: Piezoelectric pump

[0059] 31a: Inlet plate

[0060] 311a: Inlet orifice

[0061] 312a: Busbar

[0062] 313a: Manifold Chamber

[0063] 32a: Resonance plate

[0064] 321a: Hollow hole

[0065] 322a: Movable part

[0066] 323a: Fixing part

[0067] 33a: Piezoelectric actuator

[0068] 331a: Suspension plate

[0069] 332a: Outer frame

[0070] 333a: Bracket

[0071] 334a: Piezoelectric element

[0072] 335a: Gap

[0073] 336a: convex part

[0074] 34a: First insulating sheet

[0075] 35a: Conductive sheet

[0076] 36a: Second insulating sheet

[0077] 37a: Chamber space

[0078] 3b: Piezoelectric blower

[0079] 31b: Jet nozzle plate

[0080] 311b: Suspension tablet

[0081] 312b: Hollow cavity

[0082] 313b: Void

[0083] 32b: Cavity frame

[0084] 33b: Actuator

[0085] 331b: Piezoelectric carrier plate

[0086] 332b: Adjusting the resonant plate

[0087] 333b: Piezoelectric plate

[0088] 334b: Piezoelectric pin

[0089] 34b: Insulation frame

[0090] 35b: Conductive framework

[0091] 351b: Conductive pin

[0092] 352b: Conductive electrode

[0093] 36b: Resonance chamber

[0094] 4: Valve components

[0095] 41: Going to the grassroots level

[0096] 411, 421, 431: Vent holes

[0097] 42: Going to the grassroots level

[0098] 43: Valve layer

[0099] 44: Storage space

[0100] 5: External computer system

Detailed Implementation Methods

[0101] The embodiments that embody the features and advantages of this invention will be described in detail in the following description. It should be understood that this invention can have various variations in different forms, all of which do not depart from the scope of this invention, and the descriptions and illustrations herein are for illustrative purposes only and not intended to limit this invention.

[0102] Please see Figure 1A A miniature gas detection system includes: a separation flow path 1 and a filler material 2. The separation flow path 1 is fabricated using a semiconductor process and includes a main flow path 11 and multiple detection flow paths 12. The main flow path 11 guides the gas for detection, while the multiple detection flow paths 12 are connected to the main flow path 11. A monitoring chamber 121 is generated in each detection flow path 12, and a light source emitting element 122 is generated on one side of the monitoring chamber 121, with stacked light source detection elements 123 arranged and positioned. Reflectors 124 and 125 are generated on both sides of the monitoring chamber 121, corresponding to each other. A microelectromechanical pump 1a is provided at the bottom of the monitoring chamber 121. Furthermore, the filler material 2 is disposed in the main flow path 11 of the separation flow path 1 to adsorb and separate the constituent compounds contained in the gas introduced into the main flow path 11. Thus, the gas is guided into the main flow path 11. The constituent compounds are adsorbed and separated by the filler material 2 and flow in the main flow path 11 at different speeds to form different zones. When the microelectromechanical pump 1a in each detection flow path 12 is started, it introduces the constituent compounds contained in the gas in different zones into the monitoring chamber 121 of the corresponding detection flow path 12 and maintains a certain amount. In the monitoring chamber 121, the light source emitted by the light source emitting element 122 illuminates the two reflectors 124 and 125 and is projected onto the light source detection element 123 for reception. By utilizing the characteristic that the constituent compounds contained in the gas in the monitoring chamber 121 absorb light sources of different wavelengths, the light source detection element 123 receives the output spectrum of the constituent compounds contained in the gas for analysis and determination of the types of constituent compounds contained in the gas.

[0103] In a specific example, the aforementioned micro gas detection system may further include a gas actuator 3, which is a tiny piezoelectric pump 3a connected to the main flow path 11. The gas actuator 3 provides actuation to guide the gas into the main flow path 11 at a stable flow rate, allowing the filler material 2 to adsorb and separate the components contained in the introduced gas.

[0104] In order to miniaturize the separation flow path 1 so as not to affect the overall size of the device, the separation flow path 1 is fabricated using a semiconductor process. The separation flow path 1 includes a main flow path 11 and multiple detection flow paths 12. It is worth noting that the number of monitoring chambers 121 is 1 to 30, and each monitoring chamber 121 can detect one component compound contained in a gas. Therefore, 30 monitoring chambers 121 can detect 30 component compounds contained in gases, but this is not a limitation. The length of each monitoring chamber 121 connected to the main flow path 11 is 0.8 mm (800 μm) to 2 mm, and the total length of the main flow path 11 is 2 mm to 24 mm, but this is not a limitation. The length of each monitoring chamber 121 connected to the main flow path 11 can also be 800 mm to 2 μm, and the total length of the main flow path 11 can also be 2 μm to 24 μm. In this embodiment, the total length of the main flow path 11 can be adjusted to correspond to the length of the monitoring chamber 121 in millimeters, micrometers, or nanometers. As can be seen above, the number of monitoring chambers 121 can be adjusted according to design requirements, and the length of the monitoring chambers 121 can also be in the millimeter, micrometer, or nanometer range. Furthermore, the number of monitoring chambers 121 can be 1 to 30, and the number of microelectromechanical pumps 1a generated in the monitoring chambers 121 can also be 1 to 30, but is not limited to this. The number of microelectromechanical pumps 1a is the same as the number of monitoring chambers 121, and the size of the microelectromechanical pumps 1a is also in the same millimeter, micrometer, or nanometer range as the detection flow path 12.

[0105] Please see Figure 1B The data of the spectrum output by the component compound received by the light source detection element 123 is connected to the external computer system 5, which provides the acquisition, storage and analysis of the spectrum data to analyze and compare to determine the type of gas. It is worth noting that the data of the spectrum output by the component compound obtained by the light source detection element 123 comes from the gas in the monitoring chamber 121 of each detection flow path 12. The gas is emitted by a light source emitted by the light source emission element 122, and after being reflected by two reflectors 124 and 125, the data is received by the light source detection element 123.

[0106] Please see Figures 2A to 2CIn the specific implementation of this micro gas detection system, gas is introduced into the main flow path 11, where the components of the gas are adsorbed and separated by the filler material 2, and flow through the main flow path 11 at different speeds, forming different zones. This filler material 2 is a porous polymer 2a with adsorption properties, filled and disposed in the main flow path 11. In other specific embodiments, the filler material 2 can be a molecular sieve material 2b with adsorption properties, filled and disposed in the main flow path 11; the filler material 2 can be a uniformly coated fixed liquid film 2d with adsorption function on a filling carrier 2c, filled and disposed in the main flow path 11; the filler material 2 can be a silicon oxide with hydroxyl groups on its surface to implant the fixed liquid film 2d; the filler material 2 can be the fixed liquid film 2d directly coated on the inner wall surface 111 of the main flow path 11; the filler material 2 can be the fixed liquid film 2d directly sputtered onto the inner wall surface 111 of the main flow path 11.

[0107] Please see Figures 3A to 3B A valve element 4 is generated between multiple detection flow paths 12 and the main flow path 11. The valve element 4 includes an upper base layer 41, a lower base layer 42, and a valve layer 43. The valve layer 43 is disposed in the accommodating space 44 between the upper base layer 41 and the lower base layer 42. The upper base layer 41, the lower base layer 42, and the valve layer 43 are respectively provided with multiple vent holes 411, 421, and 431. The positions of the multiple vent holes 411 and 431 on the upper base layer 41 and the valve layer 43 are approximately aligned with each other, while the positions of the multiple vent holes 421 and 431 on the lower base layer 42 and the upper base layer 41 are misaligned. The valve layer 43 is made of a charged material, while the upper base layer 41 is made of a bipolar conductive material. This allows the valve layer 43 and the upper base layer 41 to maintain different polarities. When the valve layer 43 moves towards the upper base layer 41, it constitutes the opening of the valve element 4. When the valve layer 43 and the upper base layer 41 maintain the same polarity, it moves towards the lower base layer 42, which constitutes the closing of the valve element 4.

[0108] Please refer to Figure 1 and Figures 4A to 5DThe aforementioned gas actuator 3 is a piezoelectric pump 3a, which includes: an inlet plate 31a having at least one inlet hole 311a, at least one manifold 312a, and a manifold chamber 313a, wherein the inlet hole 311a is used to introduce gas, the inlet hole 311a correspondingly passes through the manifold 312a, and the manifold 312a flows into the manifold chamber 313a, so that the gas introduced by the inlet hole 311a flows into the manifold chamber 313a; and a resonant plate 32a, which is attached to the inlet plate 31a and has... It has a hollow hole 321a, a movable part 322a, and a fixed part 323a. The hollow hole 321a is located at the center of the resonant plate 32a and corresponds to the confluence chamber 313a of the inlet plate 31a. The movable part 322a is disposed around the hollow hole 321a and opposite to the confluence chamber 313a. The fixed part 323a is disposed on the outer periphery of the resonant plate 32a and fixed to the inlet plate 31a. It also includes a piezoelectric actuator 33a, which is coupled to the resonant plate 32a and is disposed corresponding to the resonant plate 32a, and includes a suspension... The system comprises a floating plate 331a, an outer frame 332a, at least one support 333a, and a piezoelectric element 334a. The floating plate 331a is square in shape and can be bent and vibrate. The outer frame 332a is arranged around the outside of the floating plate 331a. At least one support 333a is connected between the floating plate 331a and the outer frame 332a to provide support force for the elastic support of the floating plate 331a. The piezoelectric element 334a has a side length that is less than or equal to the side length of the floating plate 331a, and the piezoelectric element 334a is attached to the floating plate. On one surface of plate 331a, a voltage is applied to drive the suspension plate 331a to bend and vibrate. A cavity space 37a exists between the resonant plate 32a and the piezoelectric actuator 33a, so that when the piezoelectric actuator 33a is driven, gas is introduced through the inlet hole 311a of the inlet plate 31a, collected in the confluence chamber 313a via the confluence channel 312a, and then flows through the hollow hole 321a of the resonant plate 32a. The gas is transmitted through resonance generated by the piezoelectric actuator 33a and the movable part 322a of the resonant plate 32a. The piezoelectric pump 3a further includes a first insulating plate 34a, a conductive plate 35a, and a second insulating plate 36a, wherein the inlet plate 31a, resonant plate 32a, piezoelectric actuator 33a, first insulating plate 34a, conductive plate 35a, and second insulating plate 36a are stacked and arranged in sequence.

[0109] Please see Figure 4A and Figure 4BThe piezoelectric pump 3a includes an inlet plate 31a, a resonant plate 32a, a piezoelectric actuator 33a, a first insulating plate 34a, a conductive plate 35a, and a second insulating plate 36a stacked in sequence. The inlet plate 31a has at least one inlet hole 311a, at least one manifold trough 312a, and a manifold chamber 313a. The inlet hole 311a is used to introduce gas, and the inlet hole 311a passes through the manifold trough 312a. The manifold trough 312a flows into the manifold chamber 313a, so that the gas introduced by the inlet hole 311a can flow into the manifold chamber 313a. In this embodiment, the number of inlet holes 311a and the number of manifold channels 312a are the same. The number of inlet holes 311a and the number of manifold channels 312a are four each, but not limited to this. The four inlet holes 311a are connected to the four manifold channels 312a respectively, and the four manifold channels 312a converge into the manifold chamber 313a.

[0110] Please see Figure 4A , Figure 4B and Figure 5A As shown, the resonant plate 32a is attached to the inlet plate 31a by bonding. The resonant plate 32a has a hollow hole 321a, a movable part 322a and a fixed part 323a. The hollow hole 321a is located at the center of the resonant plate 32a and corresponds to the confluence chamber 313a of the inlet plate 31a. The movable part 322a is disposed around the hollow hole 321a and in the area opposite to the confluence chamber 313a. The fixed part 323a is disposed on the outer periphery of the resonant plate 32a and is fixed to the inlet plate 31a.

[0111] Please continue reading. Figure 4A , Figure 4B and Figure 5AAs shown, the piezoelectric actuator 33a is attached to the resonant plate 32a and includes a suspension plate 331a, an outer frame 332a, at least one bracket 333a, a piezoelectric element 334a, at least one gap 335a and a protrusion 336a. The suspension plate 331a is square in shape. The square shape is chosen because, compared to a circular suspension plate, it offers significant power-saving advantages. For capacitive loads operating at the resonant frequency, power consumption increases with frequency. Since the resonant frequency of the square suspension plate 331a is significantly lower than that of a circular suspension plate, its power consumption is also significantly lower. Therefore, the square design of the suspension plate 331a in this design offers power-saving benefits. An outer frame 332a surrounds the outside of the suspension plate 331a. At least one bracket 333a connects the suspension plate 331a and the outer frame 332a to provide elastic support for the suspension plate 331a. The piezoelectric element 334a has a side length that is less than or equal to the side length of the suspension plate 331a, and the piezoelectric element 334a is attached to a surface of the suspension plate 331a to apply voltage to drive the suspension plate 331a to bend and vibrate; and at least one gap 335a is formed between the suspension plate 331a, the outer frame 332a and the support 333a to allow gas to pass through; the protrusion 336a is the opposite surface of the suspension plate 331a on which the piezoelectric element 334a is attached. In this embodiment, the protrusion 336a can be a convex structure formed by an etching process on the suspension plate 331a, protruding from the opposite surface of the surface on which the piezoelectric element 334a is attached.

[0112] The aforementioned inlet plate 31a, resonant plate 32a, piezoelectric actuator 33a, first insulating plate 34a, conductive plate 35a, and second insulating plate 36a are stacked in sequence. A chamber space 37a needs to be formed between the suspension plate 331a of the piezoelectric actuator 33a and the resonant plate 32a. The chamber space 37a can be formed by filling the space between the resonant plate 32a and the outer frame 332a of the piezoelectric actuator 33a with a material, such as conductive adhesive, but not limited to this, so that a certain depth can be maintained between the resonant plate 32a and one surface of the suspension plate 331a to form the chamber space 37a, thereby guiding the gas more rapidly. The flow is smooth, and because the suspension plate 331a and the resonant plate 32a maintain an appropriate distance, their contact interference is reduced, thus reducing noise generation. Alternatively, in another embodiment, the thickness of the conductive adhesive filling between the resonant plate 32a and the outer frame 332a of the piezoelectric actuator 33a can be reduced by increasing the height of the outer frame 332a. This ensures that the overall assembly of the piezoelectric pump 3a is not indirectly affected by the conductive adhesive filling material due to hot pressing and cooling temperatures, preventing the conductive adhesive filling material from affecting the actual spacing of the molded chamber spaces 37a due to thermal expansion and contraction. However, this is not a limitation. Furthermore, the chamber space 37a will affect the transmission effect of the piezoelectric pump 3a; therefore, maintaining a fixed chamber space 37a is crucial for providing stable transmission efficiency for the piezoelectric pump 3a.

[0113] To understand the output actuation method of the piezoelectric pump 3a providing gas transmission, please refer to [link / reference needed]. Figures 5B to 5D As shown, please refer to the following first. Figure 5B When a driving voltage is applied to the piezoelectric element 334a of the piezoelectric actuator 33a, deformation occurs, causing the suspension plate 331a to move downwards. At this time, the volume of the chamber space 37a increases, creating a negative pressure within the chamber space 37a. This draws gas from the manifold chamber 313a into the chamber space 37a. Simultaneously, the resonant plate 32a, influenced by the resonance principle, is also moved downwards, further increasing the volume of the manifold chamber 313a. Because gas enters the chamber space 37a from the manifold chamber 313a, the manifold chamber 313a also becomes negatively pressured, thus drawing gas into the manifold chamber 313a through the inlet hole 311a and the manifold drain 312a. Please refer to [further details omitted]. Figure 5C The piezoelectric element 334a drives the suspension plate 331a to move upward, compressing the chamber space 37a. Similarly, the resonant plate 32a is moved upward by the suspension plate 331a due to resonance, forcing the gas in the chamber space 37a to be pushed downward through the gap 335a, thus achieving the effect of gas transmission. Please refer to [link / reference needed]. Figure 5DWhen the suspension plate 331a returns to its original position, the resonant plate 32a still moves downward due to inertia. At this time, the resonant plate 32a will cause the gas in the compression chamber space 37a to move towards the gap 335a, and increase the volume in the confluence chamber 313a, so that the gas can continuously converge in the confluence chamber 313a through the inlet hole 311a and the confluence drain 312a. By continuously repeating the above process... Figures 5B to 5D The piezoelectric pump 3a shown provides a gas transmission operation step, enabling the piezoelectric pump 3a to continuously allow gas to enter the flow channel formed by the inlet plate 31a and the resonant plate 32a from the inlet hole 311a to generate a pressure gradient, and then transmit it downward through the gap 335a, so that the gas flows at high speed, achieving the operation of the piezoelectric pump 3a transmitting gas output.

[0114] Please refer to Figure 1 and Figures 6A to 6D In this case, the micro gas detection system includes a gas actuator 3, which can also be a piezoelectric blower 3b. The piezoelectric blower 3b comprises: a jet nozzle 31b, including a suspension plate 311b and a hollow hole 312b. The suspension plate 311b is flexibly vibrating, and the hollow hole 312b is formed at the center of the suspension plate 311b; a cavity frame 32b, which is stacked on the suspension plate 311b; and an actuator 33b, which is stacked on the cavity frame 32b, including a piezoelectric carrier plate 331b, an adjusting resonance plate 332b, and a piezoelectric plate 333b. The piezoelectric carrier plate 331b is stacked on the cavity frame 32b, the adjusting resonance plate 332b is stacked on the piezoelectric carrier plate 331b, and the piezoelectric plate 333b is stacked on the adjusting resonance plate 332b, for receiving voltage. The piezoelectric carrier plate 331b and the resonant plate 332b are driven to reciprocate bending vibrations; the insulating frame 34b is stacked on the actuator 33b; and the conductive frame 35b is stacked on the insulating frame 34b. The jet nozzle plate 31b is fixedly positioned, which causes a gap to be defined around the outside of the jet nozzle plate 31b for gas flow. An airflow chamber is formed between the bottom of the jet nozzle plate 31b, and a resonant chamber 36b is formed between the actuator 33b, the cavity frame 32b and the suspension plate 311b. By driving the actuator 33b to drive the jet nozzle plate 31b to resonate, the suspension plate 311b of the jet nozzle plate 31b will reciprocate vibration displacement, which will attract gas through the gap into the airflow chamber and then discharge it, realizing the transmission and flow of the gas.

[0115] Please see Figures 6A to 6DAs shown, the piezoelectric blower 3b includes an air jet plate 31b, a cavity frame 32b, a kinetic body 33b, an insulating frame 34b, and a conductive frame 35b. The air jet plate 31b is made of a flexible material and has a suspension plate 311b and a hollow hole 312b. The suspension plate 311b is a sheet-like structure that bends and vibrates, while the hollow hole 312b penetrates the center of the suspension plate 311b to allow air circulation. In a preferred embodiment, the shape of the suspension plate 311b can be square, graphic, elliptical, triangular, or polygonal.

[0116] Furthermore, the aforementioned cavity frame 32b is stacked on the jet orifice plate 31b, and its appearance corresponds to that of the jet orifice plate 31b. The actuator 33b is stacked on the cavity frame 32b, and defines a resonant chamber 36b between itself, the jet orifice plate 31b, and the suspension plate 311b (e.g., Figure 6B (As shown). An insulating frame 34b is stacked on the actuator 33b, and its appearance is similar to that of the cavity frame 32b. A conductive frame 35b is stacked on the insulating frame 34b, and its appearance is similar to that of the insulating frame 34b. The conductive frame 35b has a conductive pin 351b and a conductive electrode 352b extending outward from the outer edge of the conductive pin 351b, and the conductive electrode 352b extending inward from the inner edge of the conductive frame 35b.

[0117] Furthermore, the actuator 33b further includes a piezoelectric carrier plate 331b, an adjusting resonance plate 332b, and a piezoelectric plate 333b. The piezoelectric carrier plate 331b is stacked on the cavity frame 32b. The adjusting resonance plate 332b is stacked on the piezoelectric carrier plate 331b. The piezoelectric plate 333b is stacked on the adjusting resonance plate 332b. The adjusting resonance plate 332b and the piezoelectric plate 333b are housed within an insulating frame 34b. The piezoelectric plate 333b is electrically connected to the conductive plate 333b via a conductive electrode 352b of a conductive frame 35b. In this embodiment, both the piezoelectric carrier plate 331b and the adjusting resonance plate 332b are made of conductive materials. The piezoelectric carrier plate 331b has a piezoelectric pin 334b, which is connected to a drive circuit (not shown) on a drive circuit board (not shown) to receive drive signals (which may be drive frequency and drive voltage). The drive signal forms a loop through the piezoelectric pin 334b, the piezoelectric carrier plate 331b, the adjusting resonant plate 332b, the piezoelectric plate 333b, the conductive electrode 352b, the conductive frame 35b, and the conductive pin 351b. The insulating frame 34b isolates the conductive frame 35b from the actuator 33b to prevent short circuits, allowing the drive signal to be transmitted to the piezoelectric plate 333b. After receiving the drive signal, the piezoelectric plate 333b deforms due to the piezoelectric effect, further driving the piezoelectric carrier plate 331b and the adjusting resonant plate 332b to reciprocate bending vibrations.

[0118] To further explain, the adjusting resonant plate 332b is located between the piezoelectric plate 333b and the piezoelectric carrier plate 331b, acting as a buffer between them, and can adjust the vibration frequency of the piezoelectric carrier plate 331b. Basically, the thickness of the adjusting resonant plate 332b is greater than that of the piezoelectric carrier plate 331b, and the vibration frequency of the actuator 33b is adjusted by changing the thickness of the adjusting resonant plate 332b. The jet nozzle plate 31b, the cavity frame 32b, the actuator 33b, the insulating frame 34b, and the conductive frame 35b are stacked sequentially. The piezoelectric blower 3b defines a gap 313b between the outer edges of the suspension plate 311b to allow airflow. An airflow chamber is formed between the aforementioned jet nozzle plate 31b and the bottom surface. The airflow chamber is connected to the resonant chamber 36b between the actuator 33b, the jet orifice 31b and the suspension plate 311b through the hollow hole 312b of the jet orifice 31b. By adjusting the vibration frequency of the gas in the resonant chamber 36b to be close to the vibration frequency of the suspension plate 311b, the resonant chamber 36b and the suspension plate 311b can generate a Helmholtz resonance effect, thereby improving the gas transmission efficiency.

[0119] like Figure 6C As shown, when the piezoelectric plate 333b moves away from the bottom surface, the piezoelectric plate 333b drives the suspension plate 311b of the jet nozzle plate 31b to move away from the bottom surface, causing the volume of the airflow chamber to expand rapidly, the internal pressure drops and a negative pressure is generated, which attracts air from outside the piezoelectric blower 3b to flow in through the gap 313b and enter the resonant chamber 36b through the hollow hole 312b, increasing the air pressure in the resonant chamber 36b and thus generating a pressure gradient.

[0120] like Figure 6D As shown, when the piezoelectric plate 333b drives the suspension plate 311b of the jet nozzle plate 31b to move towards the bottom surface, the gas in the resonant chamber 36b flows out rapidly through the hollow hole 312b, compressing the air in the airflow chamber, and causing the converged air to be ejected rapidly and in large quantities in an ideal gas state close to Bernoulli's law.

[0121] By repeating Figure 6C and Figure 6D As shown in the figure, the piezoelectric plate 333b vibrates reciprocally. According to the principle of inertia, the gas pressure inside the resonant chamber 36b after exhaust is lower than the equilibrium gas pressure, which will guide the gas to re-enter the resonant chamber 36b. In this way, the vibration frequency of the gas in the resonant chamber 36b is controlled to be similar to the vibration frequency of the piezoelectric plate 333b, so as to generate the Helmholtz resonance effect and realize the high-speed and large-volume transmission of air.

[0122] Please refer to Figure 1 and Figures 7A to 8CIn this miniature gas detection system, when the microelectromechanical pump 1a in each detection flow path 12 starts, it simultaneously controls the valve element 4 between each detection flow path 12 and the main flow path 11 to open. This causes the components of the gas contained in different intervals to be introduced into the monitoring chamber 121 of the corresponding detection flow path 12 and maintained at a certain amount. At this time, the microelectromechanical pump 1a stops operating, and the valve element 4 between each detection flow path 12 and the main flow path 11 is controlled to return to the closed state. Thus, the light emitted by the light source emitting element 122 in the monitoring chamber 121 is irradiated by the two reflectors 124 and 125 and projected onto the light source detection element 123 for reception. By utilizing the characteristic that the components of the gas contained in the monitoring chamber 121 absorb light sources of different wavelengths, the light source detection element 123 receives the output spectrum of the components of the gas contained in the gas to analyze and determine the types of components of the gas contained in the gas. The output pressure of the microelectromechanical pump 1a is 300 mmHg, and the output flow rate is 1.5 L / min.

[0123] The aforementioned microelectromechanical pump 1a includes: a first substrate 11a having a plurality of inflow holes 111a, the inflow holes 111a being conical; a first oxide layer 12a stacked on the first substrate 11a, the first oxide layer 12a having a plurality of busbar channels 121a and a busbar chamber 122a, the busbar channels 121a communicating between the busbar chamber 122a and the inflow holes 111a; a second substrate 13a bonded to the first substrate 11a, including: a silicon chip layer 131a having: an actuating portion 1311a, which is circular; an outer peripheral portion 1312a, which is hollow and ring-shaped, surrounding the periphery of the actuating portion 1311a; a plurality of connecting portions 1313a respectively connecting the actuating portion 1311a and the outer peripheral portion 1312a; and a plurality of A fluid channel 1314a surrounds the actuation portion 1311a and is located between the connecting portions 1313a; a second oxide layer 132a is formed under the silicon chip layer 131a, is hollow and annular, and defines a gas chamber 1321a with the silicon chip layer 131a; and a silicon material layer 133a is circular, located under the second oxide layer 132a and bonded to the first oxide layer 12a, having: a perforation 1331a formed at the center of the silicon material layer 133a; a vibration portion 1332a located in the peripheral area of ​​the perforation 1331a; and a fixing portion 1333a located in the peripheral area of ​​the silicon material layer 133a; and a piezoelectric component 14a is circular and stacked on the actuation portion 1311a of the silicon chip layer 131a. The piezoelectric component 14a includes: a lower electrode layer 141a; a piezoelectric layer 142a stacked on the lower electrode layer 141a; an insulating layer 143a disposed on a portion of the surface of the piezoelectric layer 142a and a portion of the surface of the lower electrode layer 141a; and an upper electrode layer 144a stacked on the insulating layer 143a and the remaining surface of the piezoelectric layer 142a where the insulating layer 143a is not disposed, for electrically connecting with the piezoelectric layer 142a.

[0124] Please see Figure 7A and Figure 7B The diagram below shows the microelectromechanical pump 1a of this invention. The microelectromechanical pump 1a of this invention includes: a first substrate 11a, a first oxide layer 12a, a silicon material layer 133a, a second oxide layer 132a, a silicon chip layer 131a, and a piezoelectric component 14a. The first substrate 11a, the first oxide layer 12a, the silicon material layer 133a, the second oxide layer 132a, the silicon chip layer 131a, and the piezoelectric component 14a are arranged and stacked in sequence to form a single unit.

[0125] The aforementioned first substrate 11a, silicon layer 133a, and silicon chip layer 131a can be substrates of the same material. In this embodiment, all three are silicon chips produced by a crystal growth process in a semiconductor manufacturing process, and the crystal growth process can be a polycrystalline silicon generation technology. This means that the first substrate 11a, silicon layer 133a, and silicon chip layer 131a are all polycrystalline silicon chip substrates. The thickness of the first substrate 11a is a first thickness, the thickness of the silicon layer 133a is a second thickness, and the thickness of the silicon chip layer 131a is a third thickness. The first, second, and third thicknesses can be achieved through a thinning process. The first thickness of the first substrate 11a can be greater than the third thickness of the silicon chip layer 131a, and the third thickness of the silicon chip layer 131a can be greater than the second thickness of the silicon layer 133a. The substrate thinning process can achieve the required substrate thickness through methods such as grinding, etching, and cutting.

[0126] The first oxide layer 12a and the second oxide layer 132a described above can be thin films made of the same material. In this embodiment, the first oxide layer 12a and the second oxide layer 132a are silicon dioxide (SiO2) thin films. The first oxide layer 12a and the second oxide layer 132a can be thin films of a certain thickness generated by semiconductor processing methods such as sputtering or high-temperature oxidation. The thickness of the first oxide layer 12a is greater than the thickness of the second oxide layer 132a.

[0127] The first substrate 11a is fabricated with a first upper surface 112a and a first lower surface 113a through a semiconductor crystal growth process, and photolithography is used to form at least one inflow hole 111a. Each inflow hole 111a extends from the first lower surface 113a to the first upper surface 112a. In this embodiment, there are two inflow holes 111a, but this is not a limitation. In order to improve the air intake effect, the inflow hole 111a is tapered from the first lower surface 113a to the first upper surface 112a.

[0128] The first oxide layer 12a is formed by semiconductor processes such as sputtering or high-temperature oxidation and stacked on the first upper surface 112a of the first substrate 11a. The first oxide layer 12a is formed by photolithography etching to form at least one busbar channel 121a and a busbar chamber 122a. The number and position of the busbar channel 121a correspond to the inflow holes 111a of the first substrate 11a. Therefore, in this embodiment, there are also two busbar channels 121a. One end of the two busbar channels 121a is connected to the two inflow holes 111a of the first substrate 11a, and the other end of the two busbar channels 121a is connected to the busbar chamber 122a. After the gas enters through the two inflow holes 111a, it converges into the busbar chamber 122a through its corresponding busbar channel 121a.

[0129] The aforementioned silicon layer 133a is formed by a semiconductor crystal growth process to form a second upper surface, a second lower surface, a vibrating part 1332a, and a fixing part 1333a, and is photolithographically etched to form a through hole 1331a. The through hole 1331a is formed at the center of the silicon layer 133a and penetrates the second upper surface and the second lower surface. The periphery of the through hole 1331a is the vibrating part 1332a, and the periphery of the vibrating part 1332a is the fixing part 1333a. The second lower surface of the silicon layer 133a is stacked on the first oxide layer 12a. The through hole 1331a of the silicon layer 133a is perpendicularly corresponding to and communicates with the flow chamber 122a of the first oxide layer 12a. The through hole 1331a is misaligned with the inflow hole 111a of the first substrate 11a.

[0130] The aforementioned second oxide layer 132a is fabricated by semiconductor processes such as sputtering or high-temperature oxidation and stacked on the second upper surface of the silicon material layer 133a. The second oxide layer 132a is fabricated by photolithography etching to form a gas chamber 1321a with a central recess. The gas chamber 1321a is perpendicularly corresponding to the perforation 1331a of the silicon material layer 133a and the vibration part 1332a of the periphery of the perforation 1331a, so that gas can enter the gas chamber 1321a through the perforation 1331a and the vibration part 1332a can be displaced within the gas chamber 1321a.

[0131] The aforementioned silicon chip layer 131a is formed with a third upper surface and a third lower surface through a semiconductor crystal growth process, and photolithographic etching is used to form a plurality of connecting portions 1313a penetrating the third upper surface and the third lower surface. It also defines three parts: an actuating portion 1311a, an outer peripheral portion 1312a, and a plurality of fluid channels 1314a. These are, respectively, the actuating portion 1311a surrounded by the connecting portions 1313a, the outer peripheral portion 1312a surrounding the connecting portions 1313a, and the plurality of fluid channels 1314a connecting the connecting portions 1313a and connecting the actuating portion 1311a and the outer peripheral portion 1312a. In this embodiment, there are eight connecting portions 1313a and eight fluid channels 1314a.

[0132] Please refer to this again. Figure 7A As shown, the piezoelectric component 14a includes a lower electrode layer 141a, a piezoelectric layer 142a, an insulating layer 143a, and an upper electrode layer 144a. The piezoelectric component 14a can be fabricated by thin film deposition such as physical vapor deposition (PVD) or chemical vapor deposition (CVD) or sol-gel process. Therefore, in this embodiment, the upper electrode layer 144a and the lower electrode layer 141a are fabricated by thin film deposition such as physical vapor deposition (PVD) or chemical vapor deposition (CVD). The lower electrode layer 141a is stacked on the third upper surface of the silicon chip layer 131a and is located on the actuation portion 1311a of the silicon chip layer 131a. The piezoelectric layer 142a can be fabricated by thin film deposition or sol-gel process. The piezoelectric layer 142a is stacked on top of the lower electrode layer 141a, and the two are electrically connected through their contact area. Furthermore, the area of ​​the piezoelectric layer 142a is smaller than that of the lower electrode layer 141a, so that the piezoelectric layer 142a cannot completely cover the lower electrode layer 141a. An insulating layer 143a is then stacked on a portion of the piezoelectric layer 142a and the portion of the lower electrode layer 141a that is not covered by the piezoelectric layer 142a. Finally, an upper electrode layer 144a is stacked on a portion of the insulating layer 143a and the portion of the piezoelectric layer 142a that is not covered by the insulating layer 143a, so that the upper electrode layer 144a can make contact with the piezoelectric layer 142a and be electrically connected. At the same time, the insulating layer 143a is used to block the upper electrode layer 144a and the lower electrode layer 141a, so as to avoid direct contact between the two and cause a short circuit.

[0133] The first oxide layer 12a is located between the first upper surface 112a of the first substrate 11a and the second lower surface of the silicon layer 133a. The second oxide layer 132a is located between the second upper surface of the silicon layer 133a and the third lower surface of the silicon chip layer 131a. The piezoelectric component 14a is located on the third upper surface of the silicon chip layer 131a, and the piezoelectric component 14a is opposite to the second oxide layer 132a located on the third lower surface. Furthermore, the piezoelectric component 14a is also opposite to the gas chamber 1321a of the second oxide layer 132a located on the third lower surface. The first oxide layer 12a located between the first substrate 11a and the silicon layer 133a has a busbar 121a inside it connected to the first substrate 11a. The inlet hole 111a of the first substrate 11a is connected to the manifold chamber 122a and the perforation 1331a of the silicon layer 133a. Gas enters through the inlet hole 111a of the first substrate 11a, converges in the manifold chamber 122a through the manifold channel 121a, and then flows upward through the perforation 1331a. The gas chamber 1321a of the second oxide layer 132a, located between the silicon layer 133a and the silicon chip layer 131a, is connected to the perforation 1331a of the silicon layer 133a and the connection portion 1313a of the silicon chip layer 131a. Gas enters the gas chamber 1321a through the perforation 1331a and then exits upward through the connection portion 1313a, thus achieving the function of gas transmission.

[0134] Please refer to Figures 8A to 8C This is a schematic diagram of the operation of the microelectromechanical pump 1a manufactured using semiconductor processes in this case; please refer to [the relevant documentation / reference]. Figure 8A As shown, when the lower electrode layer 141a and upper electrode layer 144a of the piezoelectric component 14a receive the driving voltage and driving signal (not shown) transmitted from the outside, they conduct them to the piezoelectric layer 142a. At this time, after receiving the driving voltage and driving signal, the piezoelectric layer 142a begins to deform due to the piezoelectric effect. The amount and frequency of its deformation are controlled by the driving voltage and driving signal. After the piezoelectric layer 142a begins to deform under the driving voltage and driving signal, it can drive the silicon... The actuator 1311a of the chip layer 131a begins to displace, and the piezoelectric component 14a drives the actuator 1311a to move upward, increasing the distance between it and the second oxide layer 132a. This increases the volume of the gas chamber 1321a of the second oxide layer 132a, creating a negative pressure within the gas chamber 1321a. This allows gas from outside the microelectromechanical pump 1a to enter through the inlet port 111a and be introduced into the manifold chamber 122a of the first oxide layer 12a. Please continue reading... Figure 8BAs shown, when the actuator 1311a is pulled upward by the piezoelectric component 14a, the vibrating part 1332a of the silicon layer 133a will also move upward due to the resonance principle. When the vibrating part 1332a moves upward, it compresses the space of the gas chamber 1321a and pushes the gas in the gas chamber 1321a towards the connection part 1313a of the silicon chip layer 131a, allowing the gas to be discharged upward through the connection part 1313a. Simultaneously, as the vibrating part 1332a moves upward and compresses the gas chamber 1321a, the volume of the manifold 122a increases due to the displacement of the vibrating part 1332a, creating a negative pressure inside. This allows for the continuous intake of gas from outside the microelectromechanical pump 1a through the inlet hole 111a. Finally, as... Figure 8C As shown, when the piezoelectric component 14a drives the actuator 1311a of the silicon chip layer 131a to move downward, the vibrating part 1332a of the silicon layer 133a is also driven downward by the actuator 1311a. Simultaneously, the gas in the compressed manifold 122a moves through its perforation 1331a into the gas chamber 1321a. Meanwhile, the gas outside the microelectromechanical pump 1a enters temporarily through the inlet hole 111a, and the gas in the gas chamber 1321a is pushed into the connection part 1313a of the silicon chip layer 131a and discharged outward. When the piezoelectric component 14a resumes driving the actuator 1311a upward again, the volume of its gas chamber 1321a will increase significantly, resulting in a higher suction force to draw gas into the gas chamber 1321a (e.g., ...). Figure 8A (As shown), repeat in this way. Figures 8A to 8C The operation can continuously drive the actuator 1311a to move up and down through the piezoelectric component 14a, and simultaneously drive the vibration part 1332a to move up and down, thereby changing the internal pressure of the microelectromechanical pump 1a, so that it can continuously draw in and discharge gas to complete the gas transmission action of the microelectromechanical pump 1a.

[0135] As described above, the micro gas detection system of this case is manufactured using a semiconductor process. The gas actuator 3 directs gas at a stable flow rate into the main flow path 11, and the detection flow path 12 is connected to the main flow path 11. Gas is delivered by the microelectromechanical pump 1a, passes through the valve element 4, and flows into the monitoring chamber 121 via the detection flow path 12, as shown in Figure 1. When the gas (flowing along the direction of the arrow shown) is separated by the adsorption of various compounds by the packing material 2 on the main flow path 11. Since the adsorption force of the packing material 2 for each compound in the gas being tested is different, the speed of different compounds in the main flow path 11 will vary. Compounds with stronger adsorption forces move slower, and compounds with weaker adsorption forces move faster. Therefore, when the components contained in the gas being tested flow through the main flow path 11, they will be adsorbed by the packing material 2. The components of the gas are gradually separated, allowing them to flow at different rates in the main flow path 11 and form different zones. When the microelectromechanical pump 1a in each detection flow path 12 is activated, it introduces the components of the gas in different zones into the monitoring chamber 121 of the corresponding detection flow path 12 and maintains a certain amount. In the monitoring chamber 121, the light emitted by the light source emitting element 122 illuminates the two reflectors 124 and 125 and is projected onto the light source detection element 123 for reception. By utilizing the different absorption characteristics of the components of the gas in the monitoring chamber 121 to different wavelengths of light, the light source detection element 123 receives the output spectrum of the components of the gas. Finally, the external computer system 5 collects the output spectrum of the light source detection element 123 for analysis to determine the types of components of the gas. The miniature gas detection system in this case is manufactured using a semiconductor process through the separation flow path 1, and the filler material 2 is set in the separation flow path 1. It can not only be miniaturized and easy to carry, but also solve the problem of setting the length of the chromatography column in known gas chromatography instruments and replace the chromatography column. It can also achieve the convenience of measurement and use anytime and anywhere, and can be used in industry.

[0136] In summary, the micro gas detection system provided in this application utilizes a semiconductor process to fabricate a separation flow path. A filler material is placed within the separation flow path, allowing for varying adsorption forces on different compounds within the introduced gas. Compounds with high adsorption forces experience progressively slower flow rates, while compounds with lower adsorption forces show a smaller decreasing flow rate. These different flow rates gradually separate the compounds into different regions within the flow path, achieving gas chromatography separation. Furthermore, multiple detection flow paths are connected in parallel within the separation flow path, each containing a monitoring chamber, a valve, and a miniaturized microelectromechanical pump. The miniaturized microelectromechanical pump adsorbs the compounds within the gas in different regions and introduces them into the corresponding monitoring chamber. Maintaining a certain quantity; then, a light source emitting element is generated on one side of the monitoring chamber, and a light source detection element is stacked and positioned. A reflector is generated on each side of the monitoring chamber, corresponding to each other. The light source emitted by the light source emitting element illuminates the two reflectors, and then is projected onto the light source detection element for reception. By utilizing the characteristic that the components of the gas in the monitoring chamber absorb different wavelengths of light, the light source detection element receives the output spectrum of the components of the gas, and analyzes and determines the types of components of the gas. The entire system can not only be miniaturized, solving the problem of setting the length of the chromatography column in known gas chromatography instruments and replacing the chromatography column, but also achieves the convenience of measurement anytime and anywhere, making it highly applicable to industry.

[0137] This case can be modified in various ways by those who are familiar with this technology, but all of them are still subject to the protection sought by the attached patent application.

Claims

1. A miniature gas detection system, comprising: A separation flow path, fabricated by a semiconductor process, includes a main flow path and multiple detection flow paths. The main flow path guides a gas for detection, and the multiple detection flow paths are connected to the main flow path. A monitoring chamber is generated in each detection flow path, and a light source emitting element is generated on one side of the monitoring chamber, a light source detection element is stacked and positioned, and a mirror is generated on each side of the monitoring chamber to correspond to each other. Finally, a microelectromechanical pump is generated at the bottom of the monitoring chamber. A packing material is disposed in the main flow path of the separation flow path to adsorb and separate the constituent compounds of the gas introduced into the main flow path; In this way, the components contained in the gas introduced into the main flow path are adsorbed and separated by the filler material, and flow through the main flow path at different speeds to form different intervals. When the microelectromechanical pump in each detection flow path is started, it introduces the components contained in the gas into the monitoring chamber of the corresponding detection flow path in different intervals and maintains a certain amount. In the monitoring chamber, a light source emitted by the light source emitting element illuminates two reflectors and is projected onto the light source detection element for reception. By utilizing the characteristic that the components contained in the gas in the monitoring chamber absorb light sources of different wavelengths differently, the light source detection element receives the output spectrum of the components contained in the gas to obtain the spectrum, and analyzes and determines the types of components contained in the gas.

2. The miniature gas detection system as described in claim 1, characterized in that, It further includes a gas actuator, which is a tiny piezoelectric pump connected to the main flow path, providing actuation to guide the gas into the main flow path at a stable flow rate, allowing the packing material to adsorb and separate the component compounds contained in the introduced gas.

3. The miniature gas detection system as described in claim 2, characterized in that, This piezoelectric pump includes: An inlet plate has at least one inlet hole, at least one manifold groove and a manifold chamber, wherein the inlet hole is for introducing a gas, the inlet hole is correspondingly connected to the manifold groove, and the manifold groove flows into the manifold chamber, so that the gas introduced by the inlet hole flows into the manifold chamber. A resonant plate, joined to the inlet plate, has a hollow hole, a movable part, and a fixed part. The hollow hole is located at the center of the resonant plate and corresponds to the flow-collecting chamber of the inlet plate. The movable part is disposed around the hollow hole and opposite the flow-collecting chamber. The fixed part is disposed on the outer periphery of the resonant plate and is fixed to the inlet plate. A piezoelectric actuator, coupled to and correspondingly disposed on the resonant plate, includes a suspension plate, an outer frame, at least one support, and a piezoelectric element. The suspension plate is square in shape and can bend and vibrate. The outer frame is disposed around the outside of the suspension plate. At least one support is connected between the suspension plate and the outer frame to provide support force for the elastic support of the suspension plate. The piezoelectric element has one side length that is less than or equal to one side length of the suspension plate and is attached to a surface of the suspension plate for being subjected to voltage to drive the suspension plate to bend and vibrate. There is a chamber space between the resonant plate and the piezoelectric actuator, so that when the piezoelectric actuator is driven, the gas is introduced through the inlet hole of the inlet plate, collected in the manifold and drain channel into the manifold chamber, and then flows through the hollow hole of the resonant plate. The gas is transmitted by the resonance generated by the piezoelectric actuator and the movable part of the resonant plate.

4. The miniature gas detection system as described in claim 3, characterized in that, The piezoelectric pump further includes a first insulating plate, a conductive plate, and a second insulating plate, wherein the inlet plate, the resonant plate, the piezoelectric actuator, the first insulating plate, the conductive plate, and the second insulating plate are stacked and arranged in sequence.

5. The miniature gas detection system as described in claim 2, characterized in that, The gas actuator is a piezoelectric blower, which includes: An air jet plate includes a suspension plate and a hollow hole, the suspension plate being bendable and vibrating, and the hollow hole being formed at the center of the suspension plate; A cavity frame supports the suspended plate; A uniform moving body, supported and stacked on the cavity frame, includes a piezoelectric carrier plate, an adjusting resonant plate, and a piezoelectric plate. The piezoelectric carrier plate is supported and stacked on the cavity frame, the adjusting resonant plate is supported and stacked on the piezoelectric carrier plate, and the piezoelectric plate is supported and stacked on the adjusting resonant plate, so as to receive voltage to drive the piezoelectric carrier plate and the adjusting resonant plate to generate reciprocating bending vibration. An insulating frame is supported and stacked on the actuator; as well as A conductive frame is stacked on the insulating frame; The jet nozzle is fixedly positioned, which causes a gap to be defined around the outside of the jet nozzle for gas flow. An airflow chamber is formed at the bottom of the jet nozzle, and a resonant chamber is formed between the actuator, the cavity frame and the suspension plate. By driving the actuator to cause the jet nozzle to resonate, the suspension plate of the jet nozzle will reciprocate and vibrate, so as to attract the gas through the gap into the airflow chamber and then discharge it, thereby realizing the transmission and flow of the gas.

6. The miniature gas detection system as described in claim 1, characterized in that, The filler is a porous polymer with adsorption properties, and it is filled in the main channel.

7. The miniature gas detection system as described in claim 1, characterized in that, The filler material is a molecular sieve material with adsorption properties, and it is filled in the main channel.

8. The miniature gas detection system as described in claim 1, characterized in that, The filler is a fixed liquid film with adsorption function uniformly covered on a filling carrier, and is filled in the main channel.

9. The miniature gas detection system as described in claim 1, characterized in that, The filler is a silicon oxide with hydroxyl groups on its surface to implant a fixative film.

10. The miniature gas detection system as described in claim 1, characterized in that, The filler is a fixed liquid film directly coated on the inner wall surface of the main channel.

11. The miniature gas detection system as described in claim 1, characterized in that, The filler is a fixed liquid film directly sputtered onto the inner wall surface of the main channel.

12. The miniature gas detection system as described in claim 1, characterized in that, A valve element is generated between multiple detection flow paths and the main flow path.

13. The miniature gas detection system as described in claim 12, characterized in that, The valve element includes an upper base layer, a lower base layer, and a valve layer. The valve layer is disposed in the accommodating space between the upper base layer and the lower base layer. The upper base layer, the lower base layer, and the valve layer each have a plurality of vent holes. The positions of the plurality of vent holes on the upper base layer and the valve layer are approximately aligned with each other, while the positions of the plurality of vent holes on the lower base layer and the upper base layer are misaligned. The valve layer is made of a charged material, while the upper base layer is made of a bipolar conductive material. This allows the valve layer and the upper base layer to maintain different polarities and move towards the upper base layer, thus opening the valve element. Conversely, this allows the valve layer and the upper base layer to maintain the same polarity and move towards the lower base layer, thus closing the valve element.

14. The miniature gas detection system as described in claim 12, characterized in that, When the microelectromechanical pump in each detection flow path starts, it simultaneously controls the valve element between each detection flow path and the main flow path to open, causing the components of the gas contained in different intervals to be introduced into the monitoring chamber of the corresponding detection flow path and maintained at a certain amount. At this time, the microelectromechanical pump stops operating, and the valve element between each detection flow path and the main flow path is controlled to return to the closed state. Thus, the light emitted by the light source emitting element in the monitoring chamber is irradiated by the two reflectors and projected onto the light source detection element for reception, so as to analyze the absorption characteristics of the components of the gas contained in the monitoring chamber at different wavelengths of the light source. The light source detection element receives the output spectrum of the components of the gas contained in the compound and obtains it for analysis to determine the type of components of the gas contained in the compound.

15. The miniature gas detection system as described in claim 1, characterized in that, The light source detection element receives and outputs the spectral data of the component compound to an external computer system, which provides the acquisition, storage and analysis of the spectral data to analyze and compare to determine the type of gas.

16. The miniature gas detection system as described in claim 1, characterized in that, This microelectromechanical pump includes: A first substrate having a plurality of inflow holes, the plurality of inflow holes being tapered; A first oxide layer is stacked on the first substrate. The first oxide layer has multiple confluence channels and a confluence chamber. The multiple confluence channels are connected between the confluence chamber and the multiple inflow holes. A second substrate, bonded to the first substrate, comprising: A silicon chip layer has: The moving part is circular; An outer peripheral portion, in the form of a hollow ring, surrounds the periphery of the actuating part; Multiple connecting parts are respectively connected between the actuating part and the outer peripheral part; and Multiple fluid channels surround the periphery of the actuating part and are respectively located between the multiple connecting parts; A second oxide layer, formed beneath the silicon chip layer, is a hollow ring and defines a gas chamber with the silicon chip layer; and A circular silicon layer is located below the second oxide layer and bonded to the first oxide layer, having the following characteristics: A perforation is formed at the center of the silicon layer; A vibrating part is located in the surrounding area of ​​the perforation; and A fixing part is located in the peripheral area of ​​the silicon material layer; and A piezoelectric component, in the shape of a circle, is stacked on the actuation part of the silicon chip layer.

17. The miniature gas detection system as described in claim 16, characterized in that, The piezoelectric component includes: One electrode layer; A piezoelectric layer is stacked on the lower electrode layer; An insulating layer is deposited on a portion of the surface of the piezoelectric layer and a portion of the surface of the lower electrode layer; and An upper electrode layer is stacked on the insulating layer and the remaining surface of the piezoelectric layer where the insulating layer is not present, for electrical connection with the piezoelectric layer.

18. The miniature gas detection system as described in claim 1, characterized in that, The total length of the main channel is 2mm to 24mm, while the length of each monitoring chamber connected to the main channel is 0.8mm to 2mm.

19. The miniature gas detection system as described in claim 18, characterized in that, The number of monitoring chambers ranges from 1 to 30.

20. The miniature gas detection system as described in claim 1, characterized in that, The total length of the main channel is 2μm to 24μm, while the length of each monitoring chamber connected to the main channel is 800nm ​​to 2μm.

21. The miniature gas detection system as described in claim 20, characterized in that, The number of monitoring chambers ranges from 1 to 30.

22. The miniature gas detection system as described in claim 18 or 20, characterized in that, The number of microelectromechanical pumps ranges from 1 to 30.

23. The miniature gas detection system as described in claim 1, characterized in that, The microelectromechanical pump has an output pressure of 300 mmHg and an output flow rate of 1.5 L / min.

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