A room temperature vulcanizing hydrogen gas sensor and a preparation method thereof

Abstract

The application discloses a room-temperature vulcanized hydrogen gas sensor and a preparation method thereof. 2.4 Cu 0.6 (HITP)2 conductive MOF reaction solution, places a PET flexible substrate containing a gold interdigital electrode in the Co 2.4 Cu 0.6 (HITP)2 conductive MOF reaction solution, obtains the PET flexible substrate with the Co 2.4 Cu 0.6 (HITP)2 conductive MOF film; based on the PET flexible substrate with the Co 2.4 Cu 0.6 (HITP)2 conductive MOF film and a CuO quantum dot reaction solution, obtains a CuO quantum dot modified Co 2.4 Cu 0.6 (HITP)2 conductive MOF film gas sensor. The application can solve the problems of poor conductivity, low room-temperature sensitivity, poor selectivity and poor sensor performance of the MOF-based sensor in the prior art.

Description

Technical Field

[0001] This invention belongs to the field of gas-sensitive sensor technology, and particularly relates to a room temperature hydrogen sulfide gas sensor and its preparation method. Background Technology

[0002] With the development of modern industry and the improvement of people's living standards, various environmental pollution problems, such as air, water, and soil pollution, are becoming increasingly serious. Among these problems, air pollution is the most direct and severe. Hydrogen sulfide (H2S), as one of the main air pollutants, is widely present in industrial processes such as oil and gas drilling and refining, wastewater treatment, and papermaking. Due to its high toxicity, it easily causes serious harm to human health and the environment. According to the safety standards set by the American Conference of American Industrial Hygienes, the threshold for hydrogen sulfide is 10 ppm. Once it exceeds 10 ppm, the human nose becomes less sensitive, and the ability to detect it decreases; if it exceeds 700 ppm, it may cause serious consequences or even death. In addition, hydrogen sulfide is a flammable and hazardous chemical that can form an explosive mixture when mixed with air, and can ignite and explode upon contact with open flames or high heat. Therefore, it is imperative to develop a room-temperature hydrogen sulfide gas sensor with high sensitivity, low detection limit, and rapid response to monitor the concentration of hydrogen sulfide in the surrounding environment in real time.

[0003] Current methods for detecting hydrogen sulfide gas, such as gas chromatography-mass spectrometry, spectrophotometry, and fluorescent probes, involve expensive equipment, complex operations, and long testing cycles, making it difficult to achieve real-time, distributed monitoring of hydrogen sulfide gas. In contrast, semiconductor-based resistive gas sensors can be miniaturized and offer high cost-effectiveness, making them suitable for large-scale distributed monitoring. Metal-organic frameworks (MOFs) are well-suited as sensing materials for semiconductor resistive gas sensors due to their large surface area and high porosity. However, most MOFs have poor conductivity, posing a challenge to detecting changes in their conductivity. Furthermore, the resistance of their derived semiconductor resistive gas sensors requires high temperatures for detection and suffers from poor selectivity, resulting in high power consumption and susceptibility to interference, severely hindering their portable development and application. Summary of the Invention

[0004] To address the aforementioned technical problems, this invention proposes a room-temperature hydrogen sulfide gas sensor and its preparation method, providing a new approach for the development of room-temperature gas sensors.

[0005] To achieve the above objectives, this invention provides a room-temperature hydrogen sulfide gas sensor, comprising: a flexible PET substrate, gold interdigitated electrodes, and a thin-film sensitive layer; wherein the thin-film sensitive layer is: CuO quantum dot modified Co 2.4 Cu 0.6 (HITP)2 conductive MOF;

[0006] The gold interdigitated electrode is fixedly disposed above the PET flexible substrate;

[0007] The thin-film sensitive layer covers the surface of the interdigital electrode and the space between the interdigital electrodes.

[0008] Optionally, the thin film sensitive layer includes Cu, Co, N, O, and C elements.

[0009] On the other hand, to achieve the above objectives, the present invention also provides a method for preparing a room temperature hydrogen sulfide gas sensor, comprising:

[0010] Obtain a flexible PET substrate containing gold interdigitated electrodes;

[0011] Configure Co 2.4 Cu 0.6 (HITP)2 conductive MOF reaction solution, the PET flexible substrate containing gold interdigitated electrodes is placed in the Co 2.4 Cu 0.6 In a (HITP)2 conductive MOF reaction solution, Co-containing compounds were obtained. 2.4 Cu 0.6 (HITP)2 conductive MOF film on a flexible PET substrate;

[0012] The one with Co 2.4 Cu 0.6 A flexible PET substrate containing a (HITP)2 conductive MOF film was introduced into a CuO quantum dot reaction solution to obtain CuO quantum dot-modified Co. 2.4 Cu 0.6 (HITP)2 conductive MOF thin film gas sensor.

[0013] Optionally, the PET flexible substrate containing the gold interdigitated electrodes is obtained by sequentially depositing gold electrodes on the PET flexible substrate using mask ultraviolet lithography, magnetron sputtering, and organic solvent to remove the photoresist.

[0014] Optionally, configure Co 2.4 Cu 0.6 The (HITP)2 conductive MOF reaction solution comprises: mixing and stirring a hexaaminotriphenyl hexahydrochloric acid solution, a cobalt nitrate hexahydrate / DMF solution, and a copper sulfate pentahydrate / DMF solution at a predetermined volume ratio, and adding an alkaline solution dropwise during stirring to complete the Co... 2.4 Cu 0.6 Preparation of (HITP)2 conductive MOF reaction solution, wherein the alkaline solution is sodium acetate.

[0015] Optionally, obtain with Co 2.4 Cu 0.6 The PET flexible substrate for (HITP)2 conductive MOF film includes:

[0016] The PET flexible substrate containing the gold interdigitated electrodes is suspended with the electrode side facing down in the Co... 2.4 Cu 0.6 On the surface of the (HITP)2 conductive MOF reaction solution, at a preset temperature and for a preset time, Co is grown in situ between the gold interdigitated electrodes. 2.4 Cu 0.6 (HITP)2 conductive MOF thin film;

[0017] Co was obtained through in-situ growth. 2.4 Cu 0.6 (HITP)2 conductive MOF film was cleaned and dried;

[0018] Co was obtained by in-situ growth after drying. 2.4 Cu 0.6 The (HITP)2 conductive MOF film retains only the gold interdigitated electrode portion to obtain the Co-containing... 2.4 Cu 0.6 (HITP)2 conductive MOF film PET flexible substrate.

[0019] Optionally, obtain CuO quantum dot modified Co 2.4 Cu 0.6 The (HITP)2 conductive MOF thin-film gas sensor includes:

[0020] The one with Co 2.4 Cu 0.6 (HITP)2 conductive MOF film on a PET flexible substrate with Co 2.4 Cu 0.6 One side of the (HITP)2 conductive MOF film is facing down and suspended on the surface of the CuO quantum dot reaction liquid, so that the Co 2.4 Cu 0.6 The (HITP)2 conductive MOF film undergoes an oxidative complexation reaction with the CuO quantum dot reaction solution, followed by drying and annealing to obtain the CuO quantum dot-modified Co. 2.4 Cu 0.6 (HITP)2 conductive MOF thin film gas sensor.

[0021] Optionally, the CuO quantum dot reaction solution is a copper nitrate solution.

[0022] Optionally, the PET flexible substrate containing the gold interdigitated electrodes is placed on the Co 2.4 Cu 0.6 Before the (HITP)2 conductive MOF reaction solution, the PET flexible substrate containing the gold interdigitated electrodes is first subjected to plasma treatment.

[0023] Compared with the prior art, the present invention has the following advantages and technical effects:

[0024] This invention utilizes a mild hydrothermal method to prepare Co 2.4 Cu 0.6 (HITP)2 conductive MOF nanomaterials were used, and CuO quantum dots were modified onto Co through an oxidation complexation method. 2.4 Cu 0.6 (HITP)2 conductive MOF surface, CuO quantum dot modified Co 2.4 Cu 0.6 (HITP)2 conductive MOF composite material. This invention uses self-made CuO quantum dots to modify Co. 2.4 Cu 0.6 (HITP)2 conductive MOF is used as the sensitive material. It is grown in situ on a flexible interdigitated electrode and gas-sensitively detected at room temperature. The composite material exhibits good hydrogen sulfide gas sensing characteristics, thereby solving the technical problems of poor conductivity, low room temperature sensitivity and poor selectivity of MOF-based sensors in the prior art, which lead to poor sensor performance. Attached Figure Description

[0025] The accompanying drawings, which form part of this application, are used to provide a further understanding of this application. The illustrative embodiments and descriptions of this application are used to explain this application and do not constitute an undue limitation of this application. In the drawings:

[0026] Figure 1 CuO quantum dot modified Co in Example 1 of this invention 2.4 Cu 0.6 Schematic diagram of a (HITP)2 conductive MOF thin film room temperature hydrogen sulfide gas sensor.

[0027] Figure 2 CuO quantum dot modified Co in Example 1 of this invention 2.4 Cu 0.6 SEM image of (HITP)2 conductive MOF film;

[0028] Figure 3 CuO quantum dot modified Co in Example 1 of this invention 2.4 Cu 0.6 XPS image of (HITP)2 conductive MOF thin film;

[0029] Figure 4 CuO quantum dot modified Co in Example 1 of this invention 2.4 Cu 0.6 Real-time response curve of (HITP)2 conductive MOF thin film room temperature hydrogen sulfide gas sensor to hydrogen sulfide gas.

[0030] Among them, 101 is a flexible PET substrate; 102 is a gold interdigitated electrode; and 103 is a CuO quantum dot modified Co. 2.4 Cu 0.6 (HITP)2 conductive MOF thin film sensitive layer. Detailed Implementation

[0031] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. This application will now be described in detail with reference to the accompanying drawings and embodiments.

[0032] It should be noted that the steps shown in the flowchart in the accompanying drawings can be executed in a computer system such as a set of computer-executable instructions, and although a logical order is shown in the flowchart, in some cases the steps shown or described may be executed in a different order than that shown here.

[0033] Example 1

[0034] like Figure 1 As shown, this embodiment provides a room temperature hydrogen sulfide gas sensor, including: a PET flexible substrate, gold interdigitated electrodes, and a thin film sensitive layer; wherein the thin film sensitive layer is: CuO quantum dot modified Co 2.4 Cu 0.6 (HITP)2 conductive MOF;

[0035] The gold fork electrode is fixedly mounted on the PET flexible substrate;

[0036] A thin-film sensitive layer covers the surface of the gold interdigitated electrode and the space between the gold interdigitated electrodes.

[0037] The PET flexible substrate serves to support the electrodes and sensitive materials, the gold cross-finger electrodes are the electrical signal testing electrodes, and the thin film sensitive layer is the sensitive unit of the sensor.

[0038] The thin film sensitive layer includes the elements Cu, Co, N, O, and C.

[0039] like Figure 1 As shown, the sensor includes: a flexible PET substrate 101, gold interdigitated electrodes 102, and CuO quantum dot-modified Co. 2.4 Cu 0.6 (HITP)2 conductive MOF thin film sensitive layer 103.

[0040] The PET flexible substrate 101 is flexible and bendable, with high optical clarity, good resistance to chemical corrosion, thermal stability, and humidity stability, making it suitable as a substrate for hydrogen sulfide sensors. The gold interdigitated electrodes 102 are sputtered onto the PET flexible substrate using masked ultraviolet lithography and magnetron sputtering, serving to connect the sensitive layer and the test circuit, and outputting electrical signals based on changes in the conductivity of the sensitive layer. CuO quantum dots are used to modify Co... 2.4Cu 0.6 The (HITP)2 conductive MOF thin film sensitive layer 103 is generally a sheet-like nanomaterial modified with nanoparticles. It is a portion of the gold interdigitated electrode 102 that can be controlled to be deposited on a flexible substrate 101 using an in-situ growth method. Its room temperature sensitivity to hydrogen sulfide gas is higher than that of other MOFs or MOF-derived semiconductors, thereby reducing the power consumption of the sensor and making it easier to integrate with portable or wearable devices.

[0041] Figure 2 Modifying Co with CuO quantum dots 2.4 Cu 0.6 SEM image of (HITP)2 conductive MOF film. Figure 2 As shown, the prepared CuO quantum dots modified with Co 2.4 Cu 0.6 The morphology of the (HITP)2 conductive MOF consists of rough-surfaced particles with a particle size of less than 200 nm, composed of layered nanosheets. It can be dispersed into a nanosheet layer structure by ultrasound. Its surface is uniformly modified with CuO quantum dots with a diameter of about 15 nm.

[0042] Figure 3 CuO quantum dot modified Co 2.4 Cu 0.6 XPS image of (HITP)2 conductive MOF thin film. (See image for details.) Figure 3 As shown, the prepared CuO quantum dots modified with Co 2.4 Cu 0.6 The (HITP)2 conductive MOF is composed of Cu, Co, N, O and C elements. Analysis shows that Cu mainly exists as divalent Cu ions, while Co exists as divalent and trivalent ions.

[0043] Figure 4 Modifying Co with CuO quantum dots 2.4 Cu 0.6 The real-time response curves of a (HITP)2 conductive MOF thin film room-temperature hydrogen sulfide gas sensor to different concentrations of hydrogen sulfide gas at room temperature are shown in the figure. The figure also shows that CuO quantum dots modified with Co... 2.4 Cu 0.6 The (HITP)2 conductive MOF thin film room temperature hydrogen sulfide gas sensor exhibits high response values ​​at room temperature for hydrogen sulfide concentrations of 0.5ppm, 1ppm, 5ppm, 10ppm, 20ppm, 50ppm, 100ppm, 200ppm, 400ppm, and 800ppm, with values ​​of 1.27, 1.62, 2.18, 2.63, 2.99, 3.90, 5.10, 7.52, 9.95, and 15.03, respectively.

[0044] The gas response value is the ratio of the sensor's resistance in air to its resistance in hydrogen sulfide gas.

[0045] Example 2

[0046] This embodiment provides a method for preparing a room temperature hydrogen sulfide gas sensor, including:

[0047] Obtain a flexible PET substrate containing gold interdigitated electrodes;

[0048] Configure Co 2.4 Cu 0.6 (HITP)2 conductive MOF reaction solution, placing a PET flexible substrate containing gold interdigitated electrodes on a Co 2.4 Cu 0.6 In a (HITP)2 conductive MOF reaction solution, Co-containing compounds were obtained. 2.4 Cu 0.6 (HITP)2 conductive MOF film on a flexible PET substrate;

[0049] The one with Co 2.4 Cu 0.6 A flexible PET substrate containing a (HITP)2 conductive MOF film was introduced into a CuO quantum dot reaction solution to obtain CuO quantum dot-modified Co. 2.4 Cu 0.6 (HITP)2 conductive MOF thin film gas sensor.

[0050] Furthermore, the method for obtaining a PET flexible substrate containing gold interdigitated electrodes is as follows: gold electrodes are deposited on the PET flexible substrate by sequentially passing a mask ultraviolet lithography, magnetron sputtering, and organic solvent to remove the photoresist.

[0051] Furthermore, configure Co 2.4 Cu 0.6 The (HITP)2 conductive MOF reaction solution comprises: mixing and stirring a hexaaminotriphenyl hexahydrochloric acid solution, a cobalt nitrate hexahydrate / DMF solution, and a copper sulfate pentahydrate / DMF solution at a predetermined volume ratio, and adding an alkaline solution dropwise during stirring to complete the Co... 2.4 Cu 0.6 Preparation of (HITP)2 conductive MOF reaction solution, wherein the alkaline solution is sodium acetate.

[0052] Furthermore, obtain Co 2.4 Cu 0.6 The PET flexible substrate for (HITP)2 conductive MOF film includes:

[0053] The PET flexible substrate containing the gold interdigitated electrodes is suspended in a Co... 2.4 Cu 0.6On the surface of the (HITP)2 conductive MOF reaction solution, at a preset temperature and with stirring for a preset time, Co is obtained by in-situ growth between the gold interdigitated electrodes. 2.4 Cu 0.6 (HITP)2 conductive MOF thin film;

[0054] Co was obtained through in-situ growth. 2.4 Cu 0.6 (HITP)2 conductive MOF film was cleaned and dried;

[0055] Co was obtained by in-situ growth after drying. 2.4 Cu 0.6 (HITP)2 conductive MOF films retain only the gold interdigitated electrode portion, resulting in Co-conductive MOF films. 2.4 Cu 0.6 (HITP)2 conductive MOF film PET flexible substrate.

[0056] Furthermore, CuO quantum dot modified Co 2.4 Cu 0.6 The (HITP)2 conductive MOF thin-film gas sensor includes:

[0057] Will contain Co 2.4 Cu 0.6 (HITP)2 conductive MOF film on a PET flexible substrate with Co 2.4 Cu 0.6 The (HITP)2 conductive MOF film is suspended on the surface of the CuO quantum dot reaction solution with one side facing down, allowing the Co 2.4 Cu 0.6 (HITP)2 conductive MOF film undergoes an oxidative complexation reaction with CuO quantum dot reaction solution, followed by drying and annealing to obtain CuO quantum dot modified Co. 2.4 Cu 0.6 (HITP)2 conductive MOF thin film gas sensor.

[0058] This embodiment provides a CuO quantum dot-modified Co... 2.4 Cu 0.6 The method for fabricating a room-temperature hydrogen sulfide gas sensor using a (HITP)2 conductive MOF thin film specifically includes: placing a sensor substrate containing flexible interdigitated electrodes on a Co... 2.4 Cu 0.6 Co was grown in situ between the interdigitated electrodes of a gas sensor in a (HITP)2 conductive MOF reaction solution. 2.4 Cu 0.6 (HITP)2 conductive MOF film was placed in a CuO quantum dot reaction solution, and CuO quantum dots were used to modify Co 2.4 Cu 0.6(HITP)2 conductive MOF film surface modified with CuO quantum dots via oxidative complexation reaction to obtain CuO quantum dot modified Co 2.4 Cu 0.6 (HITP)2 conductive MOF thin film gas sensor.

[0059] In this embodiment, the gas sensor substrate containing interdigitated electrodes is obtained by the following method: on a PET flexible substrate, gold electrodes are deposited sequentially by mask ultraviolet lithography, magnetron sputtering, and photoresist removal using an organic solvent.

[0060] In this embodiment, the flexible electrode substrate is placed on Co 2.4 Cu 0.6 Before reacting with the (HITP)2 conductive MOF, the interdigitated electrode substrate is first subjected to plasma treatment to increase the surface hydrophilicity.

[0061] In this embodiment, Co 2.4 Cu 0.6 The (HITP)2 conductive MOF reaction solution is prepared by mixing 18.07 mg / mL of cobalt nitrate hexahydrate / DMF solution, 4.52 mg / mL of copper sulfate pentahydrate / DMF solution, 5.33 mg / mL of hexaaminotriphenylhexahydrochloric acid solution, and 0.164 mg / mL of alkaline solution; the alkaline solution is sodium acetate.

[0062] Co 2.4 Cu 0.6 The (HITP)2 conductive MOF reaction solution was obtained by the following method: 5.33 mg / mL of hexaaminotriphenylhexahydrochloric acid solution was added to a mixed solution of 18.07 mg / mL cobalt nitrate hexahydrate / DMF and 4.52 mg / mL copper sulfate pentahydrate / DMF at a volume ratio of 2:1:1. Under stirring, 0.164 mg / mL of alkaline solution was added dropwise to the above mixed solution.

[0063] The PET substrate containing the gold interdigitated electrodes is suspended with the electrode side facing down in Co. 2.4 Cu 0.6 On the surface of the (HITP)2 conductive MOF reaction liquid, Co is grown in situ between the interdigitated electrodes of the gas sensor. 2.4 Cu 0.6 (HITP)2 conductive MOF film.

[0064] In this embodiment, the preparation method further includes the step of: growing Co in situ. 2.4 Cu 0.6 The (HITP)2 conductive MOF film was cleaned with deionized water and alcohol, and then dried at 60°C for 8 hours.

[0065] The PET substrate containing the gold interdigitated electrodes was placed in Co 2.4 Cu 0.6 In a (HITP)2 conductive MOF reaction solution, the substrate, except for the gold interdigitated electrodes and the areas between the interdigitates, is covered with a mask. After the in-situ growth reaction is complete, the mask is removed, allowing Co to be grown in situ only at the interdigitated electrode portion of the substrate. 2.4 Cu 0.6 (HITP)2 conductive MOF film.

[0066] In this embodiment, the CuO quantum dot reaction solution is a 12.6 mmol / L copper nitrate solution.

[0067] Will include gold interdigitated electrodes and Co 2.4 Cu 0.6 The PET substrate of the (HITP)2 conductive MOF film has electrodes and Co 2.4 Cu 0.6 The (HITP)2 conductive MOF is suspended with one side facing down on the surface of the CuO quantum dot reaction liquid, allowing the Co between the interdigitated electrodes of the gas sensor to... 2.4 Cu 0.6 (HITP)2 conductive MOF film undergoes a complexation reaction with Cu ions at room temperature, followed by drying in a vacuum at 120°C and annealing in an air atmosphere at 180°C to obtain CuO quantum dot-modified Co. 2.4 Cu 0.6 (HITP)2 film.

[0068] The above are merely preferred embodiments of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A room temperature hydrogen sulfide gas sensor, characterized in that, include: PET flexible substrate, gold interdigitated electrodes, and thin film sensitive layer; The thin film sensitive layer is: CuO quantum dot modified Co 2.4 Cu 0.6 (HITP)2 conductive MOF; The gold interdigitated electrode is fixedly disposed above the PET flexible substrate; The thin-film sensitive layer covers the surface of the interdigital electrode and the space between the interdigital electrodes.

2. The room temperature hydrogen sulfide gas sensor according to claim 1, characterized in that, The thin film sensitive layer includes the elements Cu, Co, N, O, and C.

3. A method for preparing a room temperature hydrogen sulfide gas sensor, characterized in that, include: Obtain a flexible PET substrate containing gold interdigitated electrodes; Configure Co 2.4 Cu 0.6 (HITP)2 conductive MOF reaction solution, the PET flexible substrate containing gold interdigitated electrodes is placed in the Co 2.4 Cu 0.6 In a (HITP)2 conductive MOF reaction solution, Co-containing compounds were obtained. 2.4 Cu 0.6 (HITP)2 conductive MOF film on a flexible PET substrate; The one with Co 2.4 Cu 0.6 A flexible PET substrate containing a (HITP)2 conductive MOF film was introduced into a CuO quantum dot reaction solution to obtain CuO quantum dot-modified Co. 2.4 Cu 0.6 (HITP)2 conductive MOF thin film gas sensor.

4. The method for preparing a room temperature hydrogen sulfide gas sensor according to claim 3, characterized in that, The PET flexible substrate containing the gold interdigitated electrodes is obtained by sequentially depositing gold electrodes on the PET flexible substrate using mask ultraviolet lithography, magnetron sputtering, and organic solvent to remove the photoresist.

5. The method for preparing a room temperature hydrogen sulfide gas sensor according to claim 3, characterized in that, Configure Co 2.4 Cu 0.6 The (HITP)2 conductive MOF reaction solution comprises: mixing and stirring a hexaaminotriphenyl hexahydrochloric acid solution, a cobalt nitrate hexahydrate / DMF solution, and a copper sulfate pentahydrate / DMF solution at a predetermined volume ratio, and adding an alkaline solution dropwise during stirring to complete the Co... 2.4 Cu 0.6 Preparation of (HITP)2 conductive MOF reaction solution, wherein the alkaline solution is sodium acetate.

6. The method for preparing a room temperature hydrogen sulfide gas sensor according to claim 3, characterized in that, Get Co 2.4 Cu 0.6 The PET flexible substrate for (HITP)2 conductive MOF film includes: The PET flexible substrate containing the gold interdigitated electrodes is suspended with the electrode side facing down in the Co... 2.4 Cu 0.6 On the surface of the (HITP)2 conductive MOF reaction solution, at a preset temperature and for a preset time, Co is grown in situ between the gold interdigitated electrodes. 2.4 Cu 0.6 (HITP)2 conductive MOF thin film; Co obtained from in-situ growth 2.4 Cu 0.6 (HITP)2 conductive MOF film was cleaned and dried; Co was obtained by in-situ growth after drying. 2.4 Cu 0.6 The (HITP)2 conductive MOF film retains only the gold interdigitated electrode portion to obtain the Co-containing... 2.4 Cu 0.6 (HITP)2 conductive MOF film PET flexible substrate.

7. The method for preparing a room temperature hydrogen sulfide gas sensor according to claim 3, characterized in that, Obtaining CuO quantum dot modified Co 2.4 Cu 0.6 The (HITP)2 conductive MOF thin-film gas sensor includes: The one with Co 2.4 Cu 0.6 (HITP)2 conductive MOF film on a PET flexible substrate with Co 2.4 Cu 0.6 One side of the (HITP)2 conductive MOF film is facing down and suspended on the surface of the CuO quantum dot reaction liquid, so that the Co 2.4 Cu 0.6 The (HITP)2 conductive MOF film undergoes an oxidative complexation reaction with the CuO quantum dot reaction solution, followed by drying and annealing to obtain the CuO quantum dot-modified Co. 2.4 Cu 0.6 (HITP)2 conductive MOF thin film gas sensor.

8. The method for preparing a room temperature hydrogen sulfide gas sensor according to claim 3, characterized in that, The CuO quantum dot reaction solution is a copper nitrate solution.

9. The method for preparing a room temperature hydrogen sulfide gas sensor according to claim 3, characterized in that, The PET flexible substrate containing the gold interdigitated electrodes is placed on the Co 2.4 Cu 0.6 Before the (HITP)2 conductive MOF reaction solution, the PET flexible substrate containing the gold interdigitated electrodes is first subjected to plasma treatment.

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