A new mask

Abstract

The application provides a novel mask, comprising: a base layer and a functional layer; the base layer and the functional layer are arranged in a stack; the material of the functional layer comprises a material with viscosity after temperature rise; one side of the base layer close to the functional layer is a release surface; the absorption coefficient of the base layer under the irradiation of an ultraviolet light source and with a thickness of less than 200 um is greater than or equal to 20%, wherein the wavelength of the ultraviolet light source is 355+ / -15 nm; or the absorption coefficient of the base layer under the irradiation of a green light source and with a thickness of less than 200 um is greater than or equal to 20%, wherein the wavelength of the green light source is 530+ / -15 nm; or the absorption coefficient of the base layer under the irradiation of an infrared light source and with a thickness of less than 200 um is greater than or equal to 20%, wherein the wavelength of the infrared light source is 1045+ / -20 nm; the visible light transmittance of the base layer is less than or equal to 90%. The novel mask provided by the application utilizes optical characteristics to form a patterned content through a low-power light source, the cost of the material of the functional layer is low, and a complex process is not required to match to realize patterned processing, thereby achieving cost reduction and efficiency increase.

Description

TECHNICAL FIELD

[0001] The present application relates to a new mask. BACKGROUND

[0002] In the high-tech field, such as flat panel display, semiconductor chip, circuit board, touch, solar cell, precision printing and other fields, the method of using mask to make patterned structure is widely popularized and applied.

[0003] The commonly used method is to use photoresist development or patterned metal mask. Photoresist development needs to go through many steps such as coating, pre-baking, exposure, development, hardening, etching, and stripping, and the cycle is long, the material cost is high, and the subsequent chemical cleaning increases the cost of environmental protection requirements.

[0004] And the metal mask, especially when applied to the solar cell with concave-convex surface, cannot be completely and closely attached to the surface of the solar cell, which will result in low accuracy of the patterned content, and in the process of use, regular maintenance and cleaning are required, which increases the maintenance cost. SUMMARY

[0005] One object of the present application is to provide a new mask, which comprises a base layer and a functional layer; the base layer and the functional layer are arranged in layers; the material of the functional layer comprises a material with viscosity after temperature rise;

[0006] The side of the base layer close to the functional layer is a release surface;

[0007] The absorption coefficient of the base layer under the irradiation of ultraviolet light source and with a thickness below 200um is ≥20%, wherein the wavelength of the ultraviolet light source is 355±15nm; or the absorption coefficient of the base layer under the irradiation of green light source and with a thickness below 200um is ≥20%, wherein the wavelength of the green light source is 530±15nm; or the absorption coefficient of the base layer under the irradiation of infrared light source and with a thickness below 200um is ≥20%, wherein the wavelength of the infrared light source is 1045±20nm;

[0008] The visible light transmittance of the base layer is ≤90%.

[0009] Further, the absorption coefficient of the base layer under the irradiation of ultraviolet light source and with a thickness below 200um is ≥50%, preferably the absorption coefficient of the base layer under the irradiation of ultraviolet light source and with a thickness below 200um is ≥80%;

[0010] Alternatively, the absorption coefficient of the substrate under green light irradiation and with a thickness of less than 200 μm is ≥50%, preferably, the absorption coefficient of the substrate under green light irradiation and with a thickness of less than 200 μm is ≥80%.

[0011] Alternatively, the absorption coefficient of the substrate under infrared light irradiation and with a thickness of less than 200 μm is ≥50%, preferably, the absorption coefficient of the substrate under infrared light irradiation and with a thickness of less than 200 μm is ≥80%.

[0012] Furthermore, the base layer includes a polymer layer;

[0013] The polymer layer material is a polymer, including one or more of polyethylene terephthalate (PET), polyolefin film (PO), polyimide (PI), polyvinyl chloride (PVC), and biaxially oriented polypropylene (BOPP).

[0014] Furthermore, the thickness of the base layer is 1-100 μm, preferably 5-40 μm, and even more preferably 10-25 μm.

[0015] Furthermore, the absorption coefficient of the functional layer under ultraviolet light irradiation and with a thickness of less than 200 μm is ≥5%, wherein the wavelength of the ultraviolet light source is 355±15 nm; or, the absorption coefficient of the functional layer under green light irradiation and with a thickness of less than 200 μm is ≥5%, wherein the wavelength of the green light source is 530±15 nm; or, the absorption coefficient of the functional layer under infrared light irradiation and with a thickness of less than 200 μm is ≥5%, wherein the wavelength of the infrared light source is 1045±20 nm.

[0016] Furthermore, the absorption coefficient of the functional layer under ultraviolet light irradiation and with a thickness of less than 200 μm is ≥50%, preferably, the absorption coefficient of the functional layer under ultraviolet light irradiation and with a thickness of less than 200 μm is ≥80%.

[0017] Alternatively, the absorption coefficient of the functional layer under green light irradiation and with a thickness of less than 200 μm is ≥50%, preferably, the absorption coefficient of the functional layer under green light irradiation and with a thickness of less than 200 μm is ≥80%.

[0018] Alternatively, the absorption coefficient of the functional layer under infrared light irradiation and with a thickness of less than 200 μm is ≥50%, preferably, the absorption coefficient of the functional layer under infrared light irradiation and with a thickness of less than 200 μm is ≥80%.

[0019] Furthermore, the material that becomes viscous upon temperature rise includes one or more of the following: ethylene-vinyl acetate copolymer (EVA), polyethylene octene elastomer (POE), and polyethylene foam (EPE).

[0020] Furthermore, the thickness of the functional layer is 3-20 μm, preferably 4-15 μm, and even more preferably 5-8 μm.

[0021] Furthermore, the functional layer has a peel strength of ≥10gf / cm at ≤25℃;

[0022] The functional layer has a peel strength of ≥30gf / cm at 50-80℃, and a further peel strength of ≥40gf / cm.

[0023] The functional layer has a peel strength of ≥200gf / cm at 150-180℃, and a further peel strength of ≥400gf / cm.

[0024] Furthermore, the thickness of the novel mask is 10-100 μm, preferably 10-50 μm.

[0025] Furthermore, the base layer includes a polymer layer and a first release layer; the first release layer is disposed adjacent to the functional layer;

[0026] The surface adjacent to the functional layer of the first release layer is the release surface;

[0027] The material of the first release layer is a polymer, including one or more of polyethylene terephthalate (PET), polyolefin film (PO), polyimide (PI), polyvinyl chloride (PVC), and biaxially oriented polypropylene (BOPP);

[0028] The thickness of the first release layer is 4-30 μm, preferably 5-10 μm.

[0029] Furthermore, the novel mask also includes a protective layer;

[0030] The protective layer is stacked on the side of the functional layer away from the base layer;

[0031] The protective layer includes a second release layer;

[0032] The material of the second release layer is a polymer, including one or more of polyethylene terephthalate (PET), polyolefin film (PO), polyimide (PI), polyvinyl chloride (PVC), and biaxially oriented polypropylene (BOPP).

[0033] Furthermore, the thickness of the protective layer is 1-100 μm, preferably 5-40 μm, and even more preferably 10-25 μm.

[0034] Another object of the present invention is to provide a deposition process for solar cells, wherein the deposition process uses a novel mask as described above.

[0035] Furthermore, the deposition process includes: a functional layer deposition process and / or a conductive layer deposition process;

[0036] The functional layer deposition includes dielectric layer deposition; the conductive layer deposition includes transparent conductive layer deposition and / or metallic conductive layer deposition.

[0037] In summary, the present invention provides a novel mask that, by setting specific optical properties on the substrate, such as absorption coefficient and visible light transmittance, allows the substrate to be irradiated by light sources within specific wavelength ranges, such as ultraviolet laser, green laser, or infrared laser, to pattern the substrate. Then, by utilizing the material properties of the functional layer, which includes a material that becomes viscous upon temperature rise and exhibits adhesiveness at a specific temperature, the patterned novel mask is adhered to the target object to be processed under specific temperature conditions for subsequent pattern fabrication.

[0038] It has the following characteristics:

[0039] Compared to photoresist development, the novel mask provided in this embodiment utilizes optical properties, requiring lower power from the light source compared to conventional thin films, thus saving costs. Furthermore, patterned content is formed using a low-power light source, and the functional layer material is inexpensive, eliminating the need for complex patterning processes, achieving cost reduction and efficiency improvement. Additionally, compared to metal masks, the novel mask provided in this embodiment adheres to the surface of the target object at a specific temperature through the functional layer, resulting in better adhesion between the novel mask and the surface. Compared to metal masks, it is not affected by cutout areas, making the patterned content more precise and improving quality. Attached Figure Description

[0040] The accompanying drawings, which are included to provide a further understanding of the invention and form part of this invention, illustrate exemplary embodiments of the invention and are used to explain the invention, but do not constitute an undue limitation of the invention. In the drawings:

[0041] Figure 1 This is a schematic diagram of the structure of the novel mask in Embodiment 1 of the present invention.

[0042] Figure 2 This is a schematic diagram of the structure of the novel mask in Embodiment 2 of the present invention.

[0043] Figure 3This is a schematic diagram of the base layer of the novel mask in Embodiment 3 of the present invention.

[0044] Figure 4 This is a schematic diagram showing the wavelength and absorption coefficient of the blue PET film material used in the polymer membrane of Example 1 of the present invention.

[0045] Figure 5 This is a schematic diagram showing the wavelength and absorption coefficient of the polymer membrane using yellow PET film material in Example 2 of the present invention.

[0046] Figure 6 This is a schematic diagram showing the wavelength and absorption coefficient of the polymer membrane using green PO thin film material in Example 3 of the present invention.

[0047] Figure 7 This is a schematic diagram of a method for fabricating electrode grid lines in a solar cell according to a specific application embodiment 1 of the present invention.

[0048] Figure 8 This is a schematic diagram of a method for fabricating electrode grid lines in a solar cell according to a specific application embodiment 2 of the present invention.

[0049] Figure 9 This is a schematic diagram of a method for fabricating electrode grid lines in a solar cell according to a specific application embodiment 3 of the present invention.

[0050] Figure 10 This is a schematic diagram of a method for fabricating electrode grid lines in a solar cell according to a specific application embodiment 4 of the present invention. Detailed Implementation

[0051] To make the technical problems to be solved, the technical solutions, and the beneficial effects of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present invention and are not intended to limit the present invention.

[0052] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on or indirectly on that other component. When a component is referred to as being "connected to" another component, it can be directly connected to or indirectly connected to that other component.

[0053] The terms “first,” “second,” “third,” “fourth,” etc. (if present) in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that embodiments of the invention described herein can be implemented, for example, in orders other than those illustrated or described herein. Furthermore, the terms “comprising” and “having,” and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0054] In the description of this invention, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0055] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0056] The technical solution of the present invention will be described in detail below with reference to specific embodiments. These specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described again in some embodiments.

[0057] Example 1: A novel mask with a two-layer stacked structure

[0058] This invention provides a novel mask structure with a two-layer stacked structure. Figure 1 This is a schematic diagram of the structure of the novel mask in Embodiment 1 of the present invention, as shown below. Figure 1 As shown, the structure of this novel mask includes:

[0059] A base layer 1 and a functional layer 2 are stacked together; the material of the functional layer 2 includes a material that becomes viscous when the temperature rises.

[0060] The side of the base layer 1 closest to the functional layer 2 is the release surface 3.

[0061] To increase the release force between the base layer and the functional layer in a novel release mask, the side of the base layer closest to the functional layer is typically treated with plasma, fluorinated, or coated with a silicone release agent. This allows it to exhibit an extremely light and stable release force for the pressure-sensitive adhesive of the thermoplastic material. Depending on the required release force of the release film, the adhesive strength varies, and the release force is adjusted accordingly to achieve an extremely light and stable release force during peeling.

[0062] The absorption coefficient of the substrate 1 under ultraviolet light irradiation and with a thickness of less than 200 μm is ≥20%, wherein the wavelength of the ultraviolet light source is 355±15 nm.

[0063] Alternatively, the absorption coefficient of the substrate 1 under green light source illumination and with a thickness of less than 200 μm is ≥20%, wherein the wavelength of the green light source is 530±15 nm.

[0064] Alternatively, the absorption coefficient of the substrate 1 under infrared light source irradiation and with a thickness of less than 200 μm is ≥20%, wherein the wavelength of the infrared light source is 1045±20 nm.

[0065] The visible light transmittance of substrate 1 is ≤90%.

[0066] The novel mask provided in this embodiment, by setting specific optical properties on the substrate, such as absorption coefficient and visible light transmittance, allows the substrate to be irradiated by light sources in a specific wavelength range, such as ultraviolet laser, green laser, or infrared laser, to pattern the substrate. Then, by utilizing the material properties of the functional layer, which includes a material that becomes viscous when heated, and has the characteristic of being sticky at a specific temperature, the patterned novel mask is adhered to the target object to be processed under specific temperature conditions for subsequent patterning of the area.

[0067] Compared to photoresist development, the novel mask provided in this embodiment utilizes optical properties, requiring lower power from the light source compared to conventional thin films, thus saving costs. Furthermore, patterned content is formed using a low-power light source, and the functional layer material is inexpensive, eliminating the need for complex patterning processes, achieving cost reduction and efficiency improvement. Additionally, compared to metal masks, the novel mask provided in this embodiment adheres to the surface of the target object at a specific temperature through the functional layer, resulting in better adhesion between the novel mask and the surface. Compared to metal masks, it is not affected by cutout areas, making the patterned content more precise and improving quality.

[0068] Example 2: A novel mask with a three-layer stacked structure

[0069] This invention provides a novel three-layer stacked mask structure.Figure 2 This is a schematic diagram of the structure of the novel mask in Embodiment 2 of the present invention, as shown below. Figure 2 As shown, the structure of this novel mask includes:

[0070] The base layer 1, functional layer 2, and protective layer 4 are stacked in sequence, with the protective layer 4 stacked on the side of the functional layer 2 away from the base layer 1.

[0071] The side of the base layer 1 closest to the functional layer 2 is the release surface 3.

[0072] The material of functional layer 2 includes a material that becomes viscous upon temperature rise. The protective layer 4 includes a second release layer.

[0073] The absorption coefficient of the substrate 1 under ultraviolet light irradiation and with a thickness of less than 200 μm is ≥20%, wherein the wavelength of the ultraviolet light source is 355±15 nm.

[0074] Alternatively, the absorption coefficient of the substrate 1 under green light source illumination and with a thickness of less than 200 μm is ≥20%, wherein the wavelength of the green light source is 530±15 nm.

[0075] Alternatively, the absorption coefficient of the substrate 1 under infrared light source irradiation and with a thickness of less than 200 μm is ≥20%, wherein the wavelength of the infrared light source is 1045±20 nm.

[0076] The visible light transmittance of substrate 1 is ≤90%.

[0077] The novel mask provided in this embodiment, based on the above embodiment, further includes a protective layer. Its function is to prevent other things from being pasted during the patterning process of the novel mask, so that the protective layer can be peeled off after the patterning process is completed, and the patterned novel mask can be pasted onto the target object to be processed.

[0078] Example 3, Base Structure

[0079] This invention provides a novel structure for the base layer of a mask. Figure 3 This is a schematic diagram of the base layer structure of the novel mask in Embodiment 3 of the present invention, as shown below. Figure 3 As shown, based on Embodiment 1 or Embodiment 2, the base layer 1 further includes a polymer layer 11 and a first release layer 12, with the first release layer 12 disposed adjacent to the functional layer 2. The surface of the first release layer 12 adjacent to the functional layer 2 is the release surface.

[0080] The first release layer 12 is a high molecular polymer, including but not limited to one or more of the following: polyethylene terephthalate (PET), polyolefin film (PO), polyimide (PI), polyvinyl chloride (PVC), and biaxially oriented polypropylene (BOPP).

[0081] The thickness of the first release layer 12 is 4-30 μm, preferably 5-10 μm.

[0082] The base layer structure in the novel mask provided in this embodiment is composed of two stacked layers, based on the above embodiment. The function of the first release layer is to facilitate the separation of the polymer layer of the base layer from the functional layer after the novel mask is pasted onto the target object to be treated.

[0083] The following provides a further detailed explanation of some of the features mentioned in the above embodiments.

[0084] Furthermore, the absorption coefficient of the substrate under ultraviolet light irradiation and with a thickness of less than 200 μm is ≥50%; more preferably, the absorption coefficient of the substrate under ultraviolet light irradiation and with a thickness of less than 200 μm is ≥80%.

[0085] Alternatively, the absorption coefficient of the substrate under green light irradiation and with a thickness of less than 200 μm is ≥50%, preferably, the absorption coefficient of the substrate under green light irradiation and with a thickness of less than 200 μm is ≥80%.

[0086] Alternatively, the absorption coefficient of the substrate under infrared light source irradiation and with a thickness of less than 200 μm is ≥50%, preferably, the absorption coefficient of the substrate under infrared light source irradiation and with a thickness of less than 200 μm is ≥80%.

[0087] Based on the above description, for example, for ultraviolet light sources, the absorption coefficient for a thickness of less than 200 μm can be: 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, or any range thereof.

[0088] Based on the above description, for example, for a green light source, the absorption coefficient for a thickness of less than 200 μm can be: 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, or any range thereof.

[0089] Based on the above description, for example, for infrared light sources, the absorption coefficient for thicknesses below 200 μm is: 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, or any range thereof.

[0090] Furthermore, the base layer includes a polymer layer, the material of which is a polymer, including but not limited to one or more of the following: polyethylene terephthalate (PET), polyolefin film (PO), polyimide (PI), polyvinyl chloride (PVC), and biaxially oriented polypropylene (BOPP).

[0091] Based on the above description, for example, for a substrate with a visible light transmittance ≤90%, the visible light transmittance can be: 0%, 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, or any range between them.

[0092] Furthermore, the thickness of the base layer is 1-100um, preferably 5-40um, and even more preferably 10-25um.

[0093] Based on the above description, for example, the thickness of the base layer is: 1um, 5um, 10um, 15um, 20um, 25um, 30um, 35um, 40um, 45um, 50um, 55um, 60um, 65um, 70um, 75um, 80um, 85um, 90um, 95um, 100um or any range between them.

[0094] It should be noted that the characteristic settings of the absorption coefficient of the substrate for the various light sources mentioned above can usually be achieved by adjusting the substrate color or adding additives with absorption properties. For example, in PET film layers, various dyes, additives, masterbatches, or other substances can be used to meet the absorption coefficient requirements. For instance, adding black particles to a BOPP film layer can achieve a 100% absorption coefficient, while adding gray particles to a PO film layer can achieve a 50% absorption coefficient.

[0095] Furthermore, the absorption coefficient of the functional layer under ultraviolet light irradiation and with a thickness of less than 200 μm is ≥5%, wherein the wavelength of the ultraviolet light source is 355±15 nm; or, the absorption coefficient of the functional layer under green light irradiation and with a thickness of less than 200 μm is ≥5%, wherein the wavelength of the green light source is 530±15 nm; or, the absorption coefficient of the functional layer under infrared light irradiation and with a thickness of less than 200 μm is ≥5%, wherein the wavelength of the infrared light source is 1045±20 nm.

[0096] Based on the above description, the wavelength of the ultraviolet light source is 340nm, 345nm, 350nm, 355nm, 360nm, 365nm, 370nm, or any range thereof. For example, the ultraviolet light source here can be a laser source, such as an ultrafast pulsed laser with a pulse width on the order of picoseconds or phasseconds, or a short pulsed laser with a pulse width on the order of microseconds or nanoseconds.

[0097] Based on the above description, the wavelength of the green light source is 515nm, 520nm, 525nm, 530nm, 535nm, 540nm, 545nm, or any range thereof. For example, the green light source here can be a laser source, such as an ultrafast pulse laser with a pulse width on the order of picoseconds or phasseconds, or a short pulse laser with a pulse width on the order of microseconds or nanoseconds.

[0098] Based on the above description, the wavelength of the infrared light source is 1025nm, 1030nm, 1035nm, 1040nm, 1045nm, 1050nm, 1055nm, 1060nm, 1065nm, or any range thereof. For example, the infrared light source here can be a laser source, such as an ultrafast pulse laser with a pulse width on the order of picoseconds or phasseconds, or a short pulse laser with a pulse width on the order of microseconds or nanoseconds.

[0099] Furthermore, the visible light transmittance of the functional layer is ≤100%, preferably ≤90%.

[0100] Based on the above description, for example, regarding the visible light transmittance of the functional layer, the visible light transmittance can be: 0%, 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%, 100%, or any range thereof.

[0101] Furthermore, the absorption coefficient of the functional layer under ultraviolet light irradiation and with a thickness of less than 200 μm is ≥50%, preferably, the absorption coefficient of the functional layer under ultraviolet light irradiation and with a thickness of less than 200 μm is ≥80%.

[0102] The absorption coefficient here refers to the previous description of the absorption coefficient.

[0103] It should be noted that, based on the above description, this novel mask needs to be designed to have a high absorption rate within a certain wavelength range, so that it can efficiently absorb laser energy when patterning the novel mask using, for example, a laser light source, thereby improving energy efficiency and patterning accuracy. The specific design needs to be based on the laser light source used.

[0104] Furthermore, the materials in the functional layer that exhibit viscosity upon temperature rise include, but are not limited to, one or more of the following: hot-melt materials, thermoplastic materials, and thermosetting materials. Specifically, these include, but are not limited to, one or more of the following: ethylene-vinyl acetate copolymer (EVA), polyethylene octene elastomer (POE), and polyethylene foam (EPE).

[0105] Furthermore, the thickness of the functional layer is 3-20 μm, preferably 4-15 μm, and even more preferably 5-8 μm.

[0106] Based on the above description, for example, the thickness of the functional layer is: 3um, 4um, 5um, 6um, 7um, 8um, 9um, 10um, 11um, 12um, 13um, 14um, 15um, 16um, 17um, 18um, 19um, 20um or any range between them.

[0107] Here, the characteristics of the functional layer are further refined. Specifically, the peel strength of the functional layer at ≤25℃ is ≥10gf / cm, the peel strength of the functional layer at 50℃-80℃ is ≥30gf / cm, and the further peel strength is ≥40gf / cm. The peel strength of the functional layer at 150℃-180℃ is ≥200gf / cm, and the further peel strength is ≥400gf / cm.

[0108] Based on the above description, for example, the temperature is: 0℃, 5℃, 10℃, 15℃, 20℃, 25℃, 30℃, 35℃, 40℃, 45℃, 50℃, 55℃, 60℃, 65℃, 70℃, 75℃, 80℃, 85℃, 90℃, 95℃, 100℃, 105℃, 110℃, 105℃, 110℃, 115℃, 120℃, 125℃, 130℃, 135℃, 140℃, 145℃, 150℃, 155℃, 160℃, 165℃, 170℃, 175℃, 180℃, 185℃, 190℃, 195℃, 200℃, or any range between them.

[0109] For example, the peel strength of the functional layer is: 5gf / cm, 10gf / cm, 15gf / cm, 20gf / cm, 25gf / cm, 30gf / cm, 35gf / cm, 40gf / cm, 45gf / cm, 50gf / cm, 55gf / cm, 60gf / cm, 65gf / cm, 70gf / cm, 75gf / cm, 80gf / cm, 85gf / cm, 90gf / cm. m, 95gf / cm, 100gf / cm, 110gf / cm, 120gf / cm, 130gf / cm, 140gf / cm, 150gf / cm, 160gf / cm, 170gf / cm, 180gf / cm, 190gf / cm, 200gf / cm, 300gf / cm, 400gf / cm, 500gf / cm, 1000gf / cm or any range between them.

[0110] The functional layer needs to possess a certain peel strength to ensure that the novel mask adheres firmly to the target object without curling or warping. For example, in one scenario, operation needs to be performed at 20-25℃ with a peel strength in the range of 10-20 gf / cm. In another scenario, operation needs to be performed at 80℃ with a peel strength in the range of 30-50 gf / cm. Generally speaking, the specific peel strength can be adjusted according to the application scenario and requirements.

[0111] Next, the thickness of the novel mask in the above embodiments will be further explained.

[0112] Furthermore, the thickness of the novel mask is 10-100 μm, preferably 10-50 μm.

[0113] Here, considering the overall thickness of the novel mask, based on the description above, for example, the overall thickness of the novel mask is: 10um, 15um, 20um, 25um, 30um, 35um, 40um, 45um, 50um, 55um, 60um, 65um, 70um, 75um, 80um, 85um, 90um, 95um, 100um or any range between them.

[0114] To accommodate different light sources, such as laser sources, and the requirements of novel mask patterning, the overall thickness of the novel mask needs to be designed and controlled to match the actual needs of the light source and patterning.

[0115] In general, the choice of the overall new mask thickness can be adjusted according to the application scenario and requirements.

[0116] Furthermore, the protective layer of the novel mask may also include a second release layer, which is a polymer, including but not limited to one or more of polyethylene terephthalate (PET), polyolefin (PO), polyimide (PI), polyvinyl chloride (PVC), and biaxially oriented polypropylene (BOPP).

[0117] Furthermore, the thickness of the protective layer is 1-100 μm, preferably 5-40 μm, and even more preferably 10-25 μm.

[0118] Based on the above description, for example, the thickness of the protective layer is: 1um, 5um, 10um, 15um, 20um, 25um, 30um, 35um, 40um, 45um, 50um, 55um, 60um, 65um, 70um, 75um, 80um, 85um, 90um, 95um, 100um or any range between them.

[0119] The purpose of setting up a protective layer is to protect the functional layer from contaminants adhering to it during operation.

[0120] The novel mask described above can be applied in the deposition process of solar cells.

[0121] Furthermore, the deposition process includes a functional layer deposition process and / or a conductive layer deposition process. The fabrication processes of the functional layer and the conductive layer can be selected from, or both can utilize, this novel mask. Specifically, the functional layer deposition includes dielectric layer deposition; the conductive layer deposition includes transparent conductive layer deposition and / or metallic conductive layer deposition.

[0122] The dielectric layer described above includes, but is not limited to, one or more of the following: passivation layer, insulating layer, antireflection layer, etc.

[0123] Specific Scenario Example 1

[0124] The base layer of this novel mask includes a polymer layer, and the functional layer includes a thin layer of a material that becomes viscous when heated.

[0125] The polymer layer includes a 5µm thick blue PET film with the following parameters: visible light transmittance less than 90% and energy absorption coefficient at 355nm ultraviolet wavelength ≥50%. Figure 4 This is a schematic diagram illustrating the wavelength and absorption coefficient of the blue PET film material used in the polymer membrane of Example 1 of the present invention. Figure 4As shown in the figure, the horizontal axis represents the wavelength range in nm, and the vertical axis represents the absorption coefficient in %. Figure 41 represents the absorption coefficient of the polymer membrane using blue PET film material in different wavelength ranges. Figure 42 represents the absorption coefficient of the polymer membrane using transparent PET film material in different wavelength ranges. It can be seen that the energy absorption coefficient of the polymer membrane using blue PET film material at a wavelength of 355 nm ultraviolet light is 53%, as shown in Figure 43.

[0126] The material thin layer that becomes viscous upon temperature rise includes a 5µm thick EVA film with the following specific parameters: visible light transmittance less than 90%, and energy absorption coefficient at 355nm ultraviolet wavelength ≥5%. The peel strength is 10-15 gf / cm at 25℃, 30-50 gf / cm at 50-80℃, and 200-500 gf / cm at 150-180℃.

[0127] The side of the polymer layer closest to the functional layer is a release surface formed by plasma treatment.

[0128] Specific Scenario Example 2

[0129] The new mask includes a base layer and a functional layer.

[0130] The base layer of this novel mask includes a polymer layer, and the functional layer includes a thin layer of a material that has viscosity upon temperature rise.

[0131] The polymer layer includes a 10µm thick yellow PET film with the following parameters: visible light transmittance less than 80% and energy absorption coefficient at a 535nm green light wavelength ≥20%. Figure 5 This is a schematic diagram illustrating the wavelength and absorption coefficient of the polymer membrane using yellow PET film material in Example 2 of the present invention. Figure 5 As shown in the figure, the horizontal axis represents the wavelength range in nm, and the vertical axis represents the absorption coefficient in %. Figure 51 represents the absorption coefficient of the polymer membrane using yellow PET film material in different wavelength ranges. It can be seen that the energy absorption coefficient of the polymer membrane using yellow PET film material at a wavelength of 535 nm (green light) is 23%, as shown in Figure 52.

[0132] The material thin layer that becomes viscous upon temperature rise includes a 10µm thick EVA film with the following specific parameters: visible light transmittance less than 50%, and energy absorption coefficient at a 535nm green light wavelength ≥20%. The peel strength is 5-10 gf / cm at 20℃, 35-45 gf / cm at 55-75℃, and 300-400 gf / cm at 160-180℃.

[0133] The side of the polymer layer closest to the functional layer is a release surface formed by plasma treatment.

[0134] Specific Scenario Example 3

[0135] The new mask includes a base layer and a functional layer.

[0136] The base layer of this novel mask includes a polymer layer, and the functional layer includes a thin layer of a material that has viscosity upon temperature rise.

[0137] The polymer layer includes a 5µm thick green PO film with the following parameters: visible light transmittance less than 90% and infrared light wavelength energy absorption coefficient ≥20% at 1060nm. Figure 6 This is a schematic diagram illustrating the wavelength and absorption coefficient of the polymer membrane using green PO thin film material in Example 3 of the present invention. Figure 6 As shown in the figure, the horizontal axis represents the wavelength range in nm, and the vertical axis represents the absorption coefficient in %. Figure 61 represents the absorption coefficient of the polymer membrane using green PO film material in different wavelength ranges. It can be seen that the energy absorption coefficient of the polymer membrane using green PO film material at a wavelength of 1060 nm infrared light is 20%, as shown in Figure 62.

[0138] The material thin layer that becomes viscous upon temperature rise includes a 5µm thick EVA film with the following specific parameters: visible light transmittance less than 90%, and energy absorption coefficient at 1060nm infrared wavelength ≥5%. The peel strength is 10-15 gf / cm at 25℃, 30-50 gf / cm at 50-80℃, and 200-500 gf / cm at 150-180℃.

[0139] The side of the polymer layer closest to the functional layer is a release surface formed by plasma treatment.

[0140] Specific Scenario Example 4

[0141] The new mask includes a base layer and a functional layer.

[0142] The base layer of this novel mask includes a polymer layer, and the functional layer includes a thin layer of a material that has viscosity upon temperature rise.

[0143] The polymer layer includes a 5µm thick blue PI film with the following parameters: visible light transmittance less than 90% and energy absorption coefficient at 355nm ultraviolet wavelength ≥40%.

[0144] The material thin layer that becomes viscous upon temperature rise includes a 5µm thick POE film with the following specific parameters: visible light transmittance less than 90%, and energy absorption coefficient at 355nm ultraviolet wavelength ≥5%. The peel strength is 10-15 gf / cm at 25℃, 30-50 gf / cm at 50-80℃, and 200-500 gf / cm at 150-180℃.

[0145] The side of the polymer layer closest to the functional layer is a release surface formed by plasma treatment.

[0146] Specific Scenario Example 5

[0147] The new mask consists of a base layer, a functional layer, and a protective layer.

[0148] The base layer of this novel mask includes a polymer layer, the functional layer includes a thin layer of a material that becomes viscous upon temperature rise, and the protective layer includes a release layer of a polymer.

[0149] The polymer layer includes a 5µm thick blue BOPP film with the following parameters: visible light transmittance less than 90% and energy absorption coefficient at 355nm ultraviolet wavelength ≥20%.

[0150] The material thin layer that becomes viscous upon temperature rise includes a 5µm thick EPE film with the following specific parameters: visible light transmittance less than 90%, and energy absorption coefficient at 355nm ultraviolet wavelength ≥5%. The peel strength is 10-15 gf / cm at 25℃, 30-50 gf / cm at 50-80℃, and 200-350 gf / cm at 150-170℃.

[0151] The side of the polymer layer closest to the functional layer is a release surface formed by plasma treatment.

[0152] The release layer of the polymer consists of a 5µm thick transparent PET film.

[0153] Specific Scenario Example 6

[0154] The novel mask comprises a base layer, a functional layer, and a protective layer, the protective layer comprising a release layer of a polymer.

[0155] The base layer of this novel mask includes a polymer layer, and the functional layer includes a thin layer of a material that has viscosity upon temperature rise.

[0156] The polymer layer consists of a 5µm thick blue PVC film with the following parameters: visible light transmittance less than 90% and energy absorption coefficient at 355nm ultraviolet wavelength ≥20%.

[0157] The material thin layer that becomes viscous upon temperature rise includes a 5µm thick POE film with the following specific parameters: visible light transmittance less than 90%, and energy absorption coefficient at 355nm ultraviolet wavelength ≥5%. The peel strength is 10-15 gf / cm at 25℃, 30-50 gf / cm at 50-80℃, and 300-400 gf / cm at 160-180℃.

[0158] The side of the polymer layer closest to the functional layer is a release surface formed by plasma treatment.

[0159] The release layer of the polymer consists of a transparent PET film with a thickness of 10 μm.

[0160] The specific application examples of this novel mask are shown below. It is applied in the field of solar cell manufacturing, specifically in the process of fabricating electrode grid lines.

[0161] Specific application example 1

[0162] The novel mask used here is characterized as follows: It consists of a base layer and a functional layer stacked together. The base layer includes a polymer layer, which is a 5µm blue PET film with a visible light transmittance of less than 82% and an energy absorption coefficient of ≥56% at a 360nm ultraviolet wavelength. The functional layer is a 5µm thick EVA film with a visible light transmittance of less than 42% and an energy absorption coefficient of ≥33% at a 360nm ultraviolet wavelength. Its peel strength is 10-16 gf / cm at 20-25℃, 30-50 gf / cm at 50-80℃, and 200-500 gf / cm at 150-180℃.

[0163] By employing specially designed polymer layers and functional layers with superior optical properties, both exhibit better energy absorption within the ultraviolet wavelength range. When using ultraviolet lasers to etch patterned content onto novel masks, the ultraviolet laser power requirement is low, thus saving costs.

[0164] In addition, an appropriate numerical range is adopted for the peel strength range of the functional layer so that the adhesion of the functional layer meets the processing requirements. It should not be too loose or too sticky, that is, the new mask will not fall off during the fabrication of the electrode grid lines, and the peeling process after the electrode grid lines are fabricated will not damage the solar cell.

[0165] Figure 7 This is a schematic diagram of the method for fabricating electrode grid lines in a solar cell according to a specific application embodiment 1 of the present invention, as shown below. Figure 7 As shown, the specific method in this embodiment includes the following steps.

[0166] S101. A patterned thin film mask is formed by laser etching of the electrode grid pattern of the novel mask.

[0167] First, the designed pattern is etched onto the novel mask using a laser etching process. The laser employs a picosecond-level ultraviolet light source with a wavelength of 360nm. The pattern width is preferably 1µm-500µm, more preferably 1µm-20µm, and the pattern line spacing is 50µm-5mm, more preferably 500µm-2mm. It should be noted that the pattern designed on the thin-film mask is the electrode grid line pattern on the subsequent solar cell. Furthermore, the selection of pattern width and line spacing can be adjusted according to the application scenario and requirements.

[0168] S102, A patterned novel mask is applied to the solar cell.

[0169] Next, the novel mask with the etched electrode grid pattern is placed on the side of the solar cell where the electrode grid pattern needs to be set, that is, the side of the novel mask with the functional layer exposed is attached to the solar cell.

[0170] S103. Heat treatment is performed on the solar cell with a patterned novel mask.

[0171] Heating a solar cell with a patterned thin-film mask is a method to bond the patterned mask to the solar cell more firmly, as the peel strength of the EVA film in the functional layer increases with temperature. This facilitates subsequent processing. Heating methods include, for example, using a hot filament to heat at 180°C for 2 minutes, or using an infrared lamp to heat at 80°C for 5 minutes.

[0172] S104. Deposition process is performed on solar cells with a patterned novel mask pasted on them.

[0173] Secondly, a deposition process is performed on the solar cell with the patterned novel mask attached. Specifically, metal electrode grid lines are fabricated using physical vapor deposition (PVD) or electroplating is used to fabricate the electrode grid lines onto the solar cell. PVD and electroplating are well-known technologies and will not be elaborated upon here.

[0174] S105, The patterned novel mask on the deposited solar cell is peeled off.

[0175] Then, the patterned new mask on the deposited solar cell is peeled off. Ultimately, the covered areas of the solar cell do not form electrode grid lines, while the uncovered areas form electrode grid lines.

[0176] S106. Anneal the solar cells.

[0177] Finally, the solar cells with patterned electrode grids are annealed to complete the fabrication of the electrode grids.

[0178] Specific application example 2

[0179] The novel mask used here is characterized by the following: It consists of a substrate, a functional layer, and a protective layer stacked together. The substrate includes a polymer layer comprising a 10µm thick red BOPP film with a visible light transmittance of less than 37% and a 540nm green light wavelength energy absorption coefficient ≥42%. The functional layer includes a second release layer comprising a 10µm thick POE film with a visible light transmittance of less than 42% and a 540nm green light wavelength energy absorption coefficient ≥41%. The peel strength is 12-18 gf / cm at 18-25℃, 35-45 gf / cm at 55-75℃, and 210-490 gf / cm at 155-175℃. The protective layer is a 10µm thick transparent PET film.

[0180] By employing specially designed polymer layers and functional layers with superior optical properties, both exhibit better energy absorption within the green light wavelength range. When using green lasers to etch patterned content onto novel masks, the green laser power requirement is low, thus saving costs.

[0181] In addition, an appropriate numerical range is adopted for the peel strength range of the functional layer so that the adhesion of the functional layer meets the processing requirements. It should not be too loose or too sticky, that is, the new mask will not fall off during the fabrication of the electrode grid lines, and the peeling process after the electrode grid lines are fabricated will not damage the solar cell.

[0182] Figure 8 This is a schematic diagram of the method for fabricating electrode grid lines in a solar cell according to a specific application embodiment 2 of the present invention, as shown below. Figure 8 As shown, the specific method in this embodiment includes the following steps.

[0183] S201. A patterned novel mask is formed by laser engraving of the electrode grid lines of the novel mask.

[0184] First, the designed pattern is etched onto the novel mask using a laser etching process. The laser employs a picosecond-level green light source with a wavelength of 540nm. The pattern width is preferably 1µm-500µm, more preferably 1µm-20µm, and the pattern line spacing is 50µm-5mm, more preferably 500µm-2mm. It should be noted that the pattern designed on the novel mask is the electrode grid line pattern on the subsequent solar cell. Furthermore, the selection of pattern width and line spacing can be adjusted according to the application scenario and requirements.

[0185] S202, A patterned novel mask is applied to a solar cell.

[0186] Next, after peeling off the protective layer of the new mask with the etched electrode grid pattern, it is placed on the side of the solar cell where the electrode grid pattern needs to be set, that is, the side of the new mask with the functional layer exposed is attached to the solar cell.

[0187] S203. Heat treatment is performed on the solar cell with a patterned novel mask.

[0188] Heating a solar cell with a patterned mask is used to bond the patterned mask to the solar cell more firmly, as the peel strength of the POE adhesive film in the functional layer increases with temperature. This facilitates subsequent processing. Heating methods include, for example, using a hot filament to heat at 175°C for 3 minutes, or using an infrared lamp to heat at 70°C for 6 minutes.

[0189] S204. Deposition process is performed on solar cells with a patterned novel mask pasted on them.

[0190] Secondly, a deposition process is performed on the solar cell with the patterned novel mask attached. Specifically, metal electrode grid lines are fabricated using physical vapor deposition (PVD) or electroplating is used to fabricate the electrode grid lines onto the solar cell. PVD and electroplating are well-known technologies and will not be elaborated upon here.

[0191] S205, Peel off the patterned novel mask from the deposited solar cell.

[0192] Then, the patterned new mask on the deposited solar cell is peeled off. Ultimately, the covered areas of the solar cell do not form electrode grid lines, while the uncovered areas form electrode grid lines.

[0193] S206. Anneal the solar cells.

[0194] Finally, the solar cells with patterned electrode grids are annealed to complete the fabrication of the electrode grids.

[0195] Specific application example 3

[0196] The novel mask used here is characterized by the following: It consists of a substrate and a functional layer stacked together. The substrate includes a polymer layer and a first release layer. The polymer layer comprises a 12µm thick blue PO film, and the first release layer comprises a 4µm thick transparent PET film treated with plasma. This polymer layer has a visible light transmittance of less than 53% and an energy absorption coefficient of ≥47% at a 340nm ultraviolet wavelength. The functional layer is an 8µm thick POE adhesive layer with a visible light transmittance of less than 64% and an energy absorption coefficient of ≥33% at a 340nm ultraviolet wavelength. The peel strength is 11-15 gf / cm at 20-24℃, 40-50 gf / cm at 60-80℃, and 300-500 gf / cm at 160-180℃.

[0197] By employing specially designed polymer layers and functional layers with superior optical properties, both exhibit better energy absorption within the ultraviolet wavelength range. When using ultraviolet lasers to etch patterned content onto novel masks, the ultraviolet laser power requirement is low, thus saving costs.

[0198] In addition, an appropriate numerical range is adopted for the peel strength range of the functional layer so that the adhesion of the functional layer meets the processing requirements. It should not be too loose or too sticky, that is, the new mask will not fall off during the fabrication of the electrode grid lines, and the peeling process after the electrode grid lines are fabricated will not damage the solar cell.

[0199] Figure 9 This is a schematic diagram of the method for fabricating electrode grid lines in a solar cell according to a specific application embodiment 3 of the present invention, as shown below. Figure 9 As shown, the specific method in this embodiment includes the following steps.

[0200] S301. A patterned novel mask is formed by laser engraving of the electrode grid lines of the novel mask.

[0201] First, the designed pattern is etched onto the novel mask using a laser etching process. The laser employs a picosecond-level ultraviolet light source with a wavelength of 340nm. The pattern width is preferably 1µm-500µm, more preferably 1µm-20µm, and the pattern line spacing is 50µm-5mm, more preferably 500µm-2mm. It should be noted that the pattern designed on the novel mask is the electrode grid line pattern on the subsequent solar cell. Furthermore, the selection of pattern width and line spacing can be adjusted according to the application scenario and requirements.

[0202] S302, A patterned novel mask is applied to a solar cell.

[0203] Next, the novel mask with the etched electrode grid pattern is placed on the side of the solar cell where the electrode grid pattern needs to be set, that is, the side of the novel mask with the functional layer exposed is attached to the solar cell.

[0204] S303. Heat treatment is performed on a solar cell with a patterned novel mask.

[0205] Heating a solar cell with a patterned mask is used to bond the patterned mask to the solar cell more firmly, as the peel strength of the POE adhesive film in the functional layer increases with temperature. This facilitates subsequent processing. Heating methods include, for example, using a hot filament to heat at 180°C for 2 minutes, or using an infrared lamp to heat at 80°C for 5 minutes.

[0206] S304. Deposition process is performed on solar cells with a patterned novel mask pasted on them.

[0207] Secondly, a deposition process is performed on the solar cell with the patterned novel mask attached. Specifically, metal electrode grid lines are fabricated using physical vapor deposition (PVD) or electroplating is used to fabricate the electrode grid lines onto the solar cell. PVD and electroplating are well-known technologies and will not be elaborated upon here.

[0208] S305, Peeling off the patterned novel mask from the deposited solar cell.

[0209] Then, the patterned novel mask on the deposited solar cell is peeled off. Ultimately, the covered areas of the solar cell do not form electrode grid lines, while the uncovered areas do. Because a release layer is provided between the polymer layer and the functional layer, the polymer layer can be peeled off relatively easily.

[0210] S306. Anneal the solar cells.

[0211] Finally, the solar cells with patterned electrode grids are annealed to complete the fabrication of the electrode grids.

[0212] Specific application example 4

[0213] The novel mask used here is characterized by the following: It consists of a substrate, a functional layer, and a protective layer stacked together. The substrate includes a polymer layer and a first release layer. The polymer layer comprises an 8µm thick green PET film, and the first release layer comprises a 5µm thick transparent PET film treated with plasma. The visible light transmittance of this polymer layer is less than 41%, and its energy absorption coefficient at a 520nm green light wavelength is ≥58%. The functional layer comprises a 6µm thick EVA film, with a visible light transmittance of less than 38% and an energy absorption coefficient at a 520nm green light wavelength ≥58%. The peel strength is 10-15 gf / cm at 15-25℃, 40-45 gf / cm at 50-75℃, and 200-500 gf / cm at 150-180℃. The protective layer includes a second release layer, which comprises a 5µm thick transparent PET film.

[0214] By employing specially designed polymer layers and functional layers with superior optical properties, both exhibit better energy absorption within the green light wavelength range. When using green lasers to etch patterned content onto novel masks, the green laser power requirement is low, thus saving costs.

[0215] In addition, an appropriate numerical range is adopted for the peel strength range of the functional layer so that the adhesion of the functional layer meets the processing requirements. It should not be too loose or too sticky, that is, the new mask will not fall off during the fabrication of the electrode grid lines, and the peeling process after the electrode grid lines are fabricated will not damage the solar cell.

[0216] Figure 10 This is a schematic diagram of the method for fabricating electrode grid lines in a solar cell according to a specific application embodiment 4 of the present invention, as shown below. Figure 10 As shown, the specific method in this embodiment includes the following steps.

[0217] S401. A patterned novel mask is formed by laser engraving of the electrode grid lines of the novel mask.

[0218] First, the designed pattern is etched onto the novel mask using a laser etching process. The laser employs a picosecond-level green light source with a wavelength of 540nm. The pattern width is preferably 1µm-500µm, more preferably 1µm-20µm, and the pattern line spacing is 50µm-5mm, more preferably 500µm-2mm. It should be noted that the pattern designed on the novel mask is the electrode grid line pattern on the subsequent solar cell. Furthermore, the selection of pattern width and line spacing can be adjusted according to the application scenario and requirements.

[0219] S402, A patterned novel mask is applied to a solar cell.

[0220] Next, after peeling off the protective layer of the new mask with the etched electrode grid pattern, it is placed on the side of the solar cell where the electrode grid pattern needs to be set, that is, the side of the new mask with the functional layer exposed is attached to the solar cell.

[0221] S403. Heat treatment is performed on a solar cell with a patterned novel mask.

[0222] Heating a solar cell with a patterned mask is used to bond the patterned mask to the solar cell more firmly, as the peel strength of the EVA film in the functional layer increases with temperature. This facilitates subsequent processing. Heating methods include, for example, using a hot filament to heat at 180°C for 2 minutes, or using an infrared lamp to heat at 80°C for 4 minutes.

[0223] S404. Deposition process is performed on solar cells with a patterned novel mask pasted on them.

[0224] Secondly, a deposition process is performed on the solar cell with the patterned novel mask attached. Specifically, metal electrode grid lines are fabricated using physical vapor deposition (PVD) or electroplating is used to fabricate the electrode grid lines onto the solar cell. PVD and electroplating are well-known technologies and will not be elaborated upon here.

[0225] S405, Peel off the patterned novel mask from the deposited solar cell.

[0226] Then, the patterned novel mask on the deposited solar cell is peeled off. Ultimately, the covered areas of the solar cell do not form electrode grid lines, while the uncovered areas do. Because a release layer is provided between the polymer layer and the functional layer, the polymer layer can be peeled off relatively easily.

[0227] S406. Anneal the solar cells.

[0228] Finally, the solar cells with patterned electrode grids are annealed to complete the fabrication of the electrode grids.

[0229] In the description of the above embodiments, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0230] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A thin-film mask, characterized in that, The thin-film mask is used in the deposition process of solar cells. The thin-film mask includes: a base layer and a functional layer; the base layer and the functional layer are stacked; the base layer includes a polymer layer, and the polymer layer material is a polymer, including one or more of polyethylene terephthalate, polyolefin film, polyimide, and polyvinyl chloride; the base layer includes additives to adjust the absorption characteristics of the base layer; the material of the functional layer includes a material that has viscosity after temperature rise. The side of the base layer closest to the functional layer is a release surface formed by plasma treatment, fluorine coating, or silicone release agent. The absorption coefficient of the substrate under ultraviolet light irradiation and with a thickness of less than 200 μm is ≥20%, wherein the wavelength of the ultraviolet light source is 355±15 nm; or, the absorption coefficient of the substrate under green light irradiation and with a thickness of less than 200 μm is ≥20%, wherein the wavelength of the green light source is 530±15 nm. The visible light transmittance of the substrate is ≤90%.

2. The thin film mask according to claim 1, characterized in that, The substrate, when irradiated by an ultraviolet light source and with a thickness of less than 200 μm, has an absorption coefficient ≥50%. Alternatively, the absorption coefficient of the substrate under green light irradiation, with a thickness of less than 200 μm, is ≥50%; Alternatively, the absorption coefficient of the substrate under infrared light irradiation, with a thickness of less than 200 μm, is ≥50%.

3. The thin film mask according to claim 1, characterized in that, The thickness of the base layer is 1-100 μm.

4. The thin film mask according to claim 1, characterized in that, The absorption coefficient of the functional layer under ultraviolet light irradiation and with a thickness of less than 200 μm is ≥5%, wherein the wavelength of the ultraviolet light source is 355±15 nm; or, the absorption coefficient of the functional layer under green light irradiation and with a thickness of less than 200 μm is ≥5%, wherein the wavelength of the green light source is 530±15 nm; or, the absorption coefficient of the functional layer under infrared light irradiation and with a thickness of less than 200 μm is ≥5%, wherein the wavelength of the infrared light source is 1045±20 nm.

5. The thin film mask according to claim 1, characterized in that, The absorption coefficient of the functional layer under ultraviolet light irradiation, with a thickness of less than 200 μm, is ≥50%. Alternatively, the absorption coefficient of the functional layer under green light irradiation, with a thickness of less than 200 μm, is ≥50%; Alternatively, the absorption coefficient of the functional layer under infrared light irradiation, with a thickness of less than 200 μm, is ≥50%.

6. The thin film mask according to claim 1, characterized in that, The materials that become viscous upon temperature rise include one or more of the following: ethylene-vinyl acetate copolymer, polyethylene octene copolymer, and polyethylene foam.

7. The thin film mask according to claim 1, characterized in that, The thickness of the functional layer is 3-20 μm.

8. The thin film mask according to claim 1, characterized in that, The functional layer has a peel strength of ≥10gf / cm at ≤25℃; The functional layer has a peel strength of ≥30gf / cm in the range of 50-80℃; The functional layer has a peel strength of ≥200gf / cm at 150-180℃.

9. The thin film mask according to claim 1, characterized in that, The thickness of the thin film mask is 10-100 μm.

10. The thin film mask according to claim 1, characterized in that, The base layer includes a polymer layer and a first release layer; the first release layer is disposed adjacent to the functional layer; The surface adjacent to the functional layer of the first release layer is the release surface; The material of the first release layer is a polymer, including one or more of polyethylene terephthalate, polyolefin film, polyimide, and polyvinyl chloride; The thickness of the first release layer is 4-30 μm.

11. The thin film mask according to claim 1, characterized in that, The thin-film mask further includes: a protective layer; The protective layer is stacked on the side of the functional layer away from the base layer; The protective layer includes a second release layer; The material of the second release layer is a polymer, including one or more of polyethylene terephthalate, polyolefin film, polyimide, and polyvinyl chloride.

12. The thin film mask according to claim 11, characterized in that, The thickness of the protective layer is 1-100 μm.

13. A deposition process for a solar cell, wherein the deposition process uses a thin film mask as described in any one of claims 1-12.

14. The deposition process according to claim 13, wherein the deposition process comprises: Functional layer deposition process and / or conductive layer deposition process; The functional layer deposition includes dielectric layer deposition; the conductive layer deposition includes transparent conductive layer deposition and / or metallic conductive layer deposition.

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