A multi-channel semiconductor absorption spectroscopy temperature measurement system and temperature measurement method

Abstract

The present invention relates to an optical fiber temperature measurement system and method, and in particular to a multi-channel semiconductor absorption spectrum temperature measurement system and method, which are used to address the shortcomings of existing semiconductor absorption spectrum temperature measurement methods, such as the need to use a constant temperature device for one-to-one calibration, or the large measurement error caused by wavelength drift due to changes in ambient temperature. In the multi-channel semiconductor absorption spectrum temperature measurement system, the optical fiber probe module includes N optical fiber probes, the 1st to N-1 optical fiber probes are located outside the chassis as temperature measurement optical fiber probes, and the Nth optical fiber probe is located inside the chassis as a reference optical fiber probe. The present invention measures the ambient temperature of the reference channel to eliminate the problem of wavelength drift caused by the CCD being affected by the ambient temperature, thereby improving the temperature measurement accuracy of the system. At the same time, the present invention discloses a multi-channel semiconductor absorption spectrum temperature measurement method.

Description

Technical Field

[0001] The present invention relates to an optical fiber temperature measurement system and method, and in particular to a multi-channel semiconductor absorption spectrum temperature measurement system and method. Background Art

[0002] The semiconductor absorption edge wavelength λ is positively correlated with temperature T. Assuming constant light source radiation intensity, the semiconductor absorption spectrum edge shifts toward longer wavelengths as temperature increases. Based on the relationship between the semiconductor reflectance spectrum and temperature, measuring the shift in the semiconductor reflectance spectrum edge wavelength can provide temperature information. By demodulating the reflectance spectrum and establishing a functional relationship between the absorption edge wavelength and temperature, temperature measurement can be achieved.

[0003] Chinese patent CN111323143A discloses a signal processing method for semiconductor absorption spectral temperature measurement. Based on the absorption spectrum curve that eliminates background errors, it uses PID control of the integration time to accurately control the absorption edge spectrum within a certain range, optimizes the calculation accuracy of the absorption edge wavelength, and indirectly improves the temperature demodulation accuracy. However, this signal processing method uses an existing wavelength-temperature comparison table to query the corresponding temperature value to determine the measured temperature. Due to differences in hardware and optical paths between different instruments and different channels, the wavelength-temperature comparison tables of different instruments and different channels will have large differences, so a constant temperature device is required for one-to-one calibration.

[0004] In addition, most of the commonly used semiconductor absorption spectroscopy temperature measurement methods are based on spectral measurement platforms, which are very sensitive to ambient temperature. Changes in ambient temperature can easily cause the wavelength of the measured spectrum to drift, greatly increasing the measurement error of the measurement system. Summary of the Invention

[0005] The purpose of the present invention is to solve the shortcomings of existing semiconductor absorption spectroscopy temperature measurement methods, such as the need to use a constant temperature device for one-to-one calibration, or the large measurement errors caused by wavelength drift due to ambient temperature changes, and to provide a multi-channel semiconductor absorption spectroscopy temperature measurement system and temperature measurement method.

[0006] In order to solve the deficiencies of the above-mentioned prior art, the present invention provides the following technical solutions:

[0007] A multi-channel semiconductor absorption spectrum temperature measurement system, which is special in that it includes a fiber optic probe module, a chassis, an LED digital tube display module arranged on the chassis, and a light source module, a flange connection module, a synchronous trigger module, a coupling module, a CCD, an FPGA data acquisition module, a DSP data processing module, an MCU, and a digital temperature module arranged inside the chassis;

[0008] The light source module includes N LEDs, the flange connection module includes N flanges, and the fiber optic probe module includes N fiber optic probes; the output end of the Xth LED is connected to the Xth fiber optic probe via the Xth flange, and the output end of the Xth fiber optic probe is connected to the coupling module, CCD, FPGA data acquisition module, DSP data processing module, MCU, and LED digital tube display module in sequence via the Xth flange; N is a positive integer not less than 2, X is a positive integer, and 1≤X≤N;

[0009] The 1st to N-1th fiber optic probes are located outside the chassis as temperature measurement fiber optic probes, and are used to provide the semiconductor absorption spectrum curve of the corresponding temperature measurement channel; the Nth fiber optic probe is located inside the chassis as a reference fiber optic probe, and the output end of the reference fiber optic probe is connected to the input end of the digital temperature module, and the output end of the digital temperature module is connected to the MCU, and is used to provide the semiconductor absorption spectrum curve of the corresponding reference channel;

[0010] The N LEDs are respectively connected to the synchronization trigger module, which is connected to the MCU for switching different channel optical fibers to perform time-sharing work;

[0011] The CCD and MCU are connected to each other and are used to correspond the spectrum signals collected by different optical fiber probes working in time sharing to their channel numbers one by one;

[0012] The MCU is used to convert the characteristic wavelength result calculated by the DSP data processing module into temperature data.

[0013] At the same time, the present invention provides a multi-channel semiconductor absorption spectroscopy temperature measurement method, which is special in that it is used in the above-mentioned multi-channel semiconductor absorption spectroscopy temperature measurement system, comprising the following steps:

[0014] Step 1: The MCU sends a command to the synchronous trigger module, so that the synchronous trigger module triggers the Nth LED in the light source module to start working;

[0015] Step 2: The light emitted by the Nth LED is transmitted to the reference fiber probe through the Nth flange, and then transmitted from the reference fiber probe to the coupling module through the Nth flange. After coupling by the coupling module, it is transmitted to the CCD. After data acquisition by the FPGA data acquisition module, it is transmitted to the DSP data processing module for algorithm demodulation operation. The demodulated characteristic wavelength is transmitted to the MCU to obtain the reference channel semiconductor absorption spectrum curve. The length of the array is M+1, where λ represents the wavelength and M is an integer greater than 2;

[0016] Step 3: Use the reference channel semiconductor absorption spectrum curve Calculate the effective waveform I0(λ) of the reference channel;

[0017] Step 4: Set X=1;

[0018] Step 5: The MCU sends a command to the synchronous trigger module, so that the synchronous trigger module triggers the Xth LED in the light source module to start working;

[0019] Step 6: Measure and collect the semiconductor absorption spectrum curve of the Xth temperature measurement channel The length of the array is M+1, where λ represents the wavelength and M is an integer greater than 2;

[0020] Step 7: Obtain the semiconductor absorption spectrum curve through the Xth temperature measurement channel Calculate the effective waveform I of the Xth temperature measurement channel X (α);

[0021] Step 8: Compare I0(λ) and I X (α) Perform interpolation calculation;

[0022] Step 9. Calculate I0(λ) and I X (α) distance d;

[0023] Step 10: Read the digital temperature module data;

[0024] The MCU obtains the temperature τ measured by the digital temperature module through instructions and obtains the ambient temperature of the reference channel;

[0025] Step 11, temperature calculation of temperature measurement channel;

[0026] According to the relationship between wavelength drift and temperature change, combined with I0(λ) and I X (α) distance d, temperature τ, calculate the temperature value T of the Xth measurement channel X ;

[0027] Step 12: MCU outputs the temperature value T of the Xth measurement channel X To the LED digital tube display module;

[0028] Step 13: Determine whether X is equal to N-1. If so, the multi-channel temperature measurement is completed and the process ends. Otherwise, add 1 to X and return to step 5.

[0029] Furthermore, the step 3 is specifically as follows:

[0030] Step 3.1: Semiconductor absorption spectrum curve Perform a difference to obtain V0(λ), whose array length is M;

[0031]

[0032] Where λ k is the kth wavelength value of the effective waveform I0(λ), λk+1 is the k+1th wavelength value of the effective waveform I0(λ);

[0033] Step 3.2: Find the maximum value V of V0(λ) max and maximum value V max The index value V index ;

[0034] V max =max{V0(λ)};

[0035] Step 3.3: Perform a difference on V0(λ) to obtain W0(λ), whose array length is M-1;

[0036] W0(λ)=V0(λ k+1 )-V0(λ k ),k=0,1,2,...,M-2;

[0037] Step 3.4: Find the maximum value W of W0(λ) max and maximum value W max The index value W index ;

[0038] W max =max{W0(λ)};

[0039] Step 3.5, with W index As the starting point, V index Intercept the semiconductor absorption spectrum curve for the end point Then, normalization processing is performed to obtain the effective waveform I0(λ) of the reference channel, whose array length is L0.

[0040] Furthermore, the step 7 is specifically as follows: adopting the method described in step 3, through the X-th temperature measurement channel semiconductor absorption spectrum curve Calculate the effective waveform I of the Xth temperature measurement channel X (α), whose array length is L X .

[0041] Furthermore, in step 8, linear interpolation is performed to make I0(λ) and I X The array length of (α) is L;

[0042] In step 9, the I0(λ) and I X The distance d of (α) is calculated as follows:

[0043]

[0044] Where L is the effective waveform I0(λ) and I X The array length of (α), α kIs the effective waveform I X (α) kth wavelength value, I0(λ k ) is the kth spectrum amplitude of the effective waveform I0(λ), I X (α k ) is the effective waveform I X (α) kth spectral amplitude.

[0045] Furthermore, the step 11 is specifically as follows: according to the empirical value, the wavelength shift increases by 1nm and the temperature increases by A℃, and the combination of I0(λ) and I X (α) The distance d and temperature τ are calculated according to the following formula: X :

[0046]

[0047] Where α0 is the effective waveform I X (α) The 0th wavelength value.

[0048] Compared with the prior art, the present invention has the following beneficial effects:

[0049] (1) In a multi-channel semiconductor absorption spectroscopy temperature measurement system of the present invention, the fiber optic probe module includes N fiber optic probes, the 1st to N-1 fiber optic probes are located outside the chassis as temperature measurement fiber optic probes, and the Nth fiber optic probe is located inside the chassis as a reference fiber optic probe. The present invention eliminates the problem of wavelength drift caused by the CCD being affected by the ambient temperature by measuring the ambient temperature of the reference channel, thereby improving the temperature measurement accuracy of the system.

[0050] (2) The present invention provides a multi-channel semiconductor absorption spectrum temperature measurement method, which effectively eliminates the influence of external stray light interference or channel inconsistency by interpolating the effective waveform of the semiconductor absorption spectrum of the reference channel and the measurement channel, thereby further improving the temperature demodulation accuracy of the semiconductor absorption spectrum.

[0051] (3) The multi-channel semiconductor absorption spectroscopy temperature measurement method of the present invention can effectively eliminate the differences between different instruments and channels caused by differences in hardware and optical paths by setting a reference channel and measuring the ambient temperature of the reference channel, further eliminating the need to look up wavelength-temperature comparisons and use a constant temperature bath for one-to-one calibration. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] Figure 1 This is a structural schematic diagram of a multi-channel semiconductor absorption spectroscopy temperature measurement system of the present invention;

[0053] Figure 2 This is a schematic flow chart of a multi-channel semiconductor absorption spectroscopy temperature measurement method of the present invention;

[0054] Figure 3The reference channel semiconductor absorption spectrum curve in step 2 of the embodiment of the present invention is Schematic diagram of;

[0055] Figure 4 for Figure 3 The semiconductor absorption spectrum curve shown Schematic diagram of V0(λ) obtained after a single difference;

[0056] Figure 5 for Figure 4 The schematic diagram of W0(λ) obtained by first difference of V0(λ) shown in FIG.

[0057] Figure 6 Schematic diagram of the effective waveform I0(λ) of the reference channel in step 3.5 of an embodiment of the present invention;

[0058] Figure 7 The effective waveform I of the measurement channel in step 7 of the embodiment of the present invention is X (α) Schematic diagram;

[0059] Figure 8 The effective waveform I0(λ) of the temperature measurement channel and the effective waveform I0(λ) of the reference channel in step 9 of the embodiment of the present invention are X Schematic diagram of the distance d of (α).

[0060] The reference numerals are as follows: 1-light source module, 11-LED; 2-flange connection module, 21-flange; 31-temperature measurement fiber optic probe, 32-reference fiber optic probe; 4-synchronization trigger module; 5-coupling module; 6-CCD; 7-FPGA data acquisition module; 8-DSP data processing module; 9-MCU; 10-digital temperature module; 110-LED digital tube display module; 120-chassis. DETAILED DESCRIPTION

[0061] The present invention will be further described below with reference to the accompanying drawings and exemplary embodiments.

[0062] Reference Figure 1 A multi-channel semiconductor absorption spectrum temperature measurement system includes a fiber optic probe module, a chassis 120, an LED digital tube display module 110 arranged on the chassis 120, and a light source module 1, a flange connection module 2, a synchronous trigger module 4, a coupling module 5, a CCD 6, an FPGA data acquisition module 7, a DSP data processing module 8, an MCU 9, and a digital temperature module 10 arranged in the chassis 120.

[0063] The light source module 1 includes N LEDs 11, the flange connection module 2 includes N flanges 21, and the fiber optic probe module includes N fiber optic probes; the output end of the Xth LED 11 is connected to the Xth fiber optic probe through the Xth flange 21, and the output end of the Xth fiber optic probe is connected to the coupling module 5, CCD 6, FPGA data acquisition module 7, DSP data processing module 8, MCU 9, and LED digital tube display module 110 in sequence through the Xth flange 21; N is a positive integer not less than 2, X is a positive integer, and 1≤X≤N.

[0064] The 1st to N-1th fiber optic probes are located outside the chassis 120 as temperature measurement fiber optic probes 31, and the Nth fiber optic probe is located inside the chassis 120 as a reference fiber optic probe 32. The output end of the reference fiber optic probe 32 is connected to the input end of the digital temperature module 10, and the output end of the digital temperature module 10 is connected to the MCU9 for providing temperature information inside the chassis 120.

[0065] The N LEDs 11 are respectively connected to the synchronous trigger module 4, and the synchronous trigger module 4 is connected to the MCU 9 for switching different channel optical fibers to perform time-sharing work.

[0066] The CCD6 and MCU9 are interconnected and used to make a one-to-one correspondence between the spectrum signals collected by different optical fiber probes working in time sharing and their channel numbers; the MCU9 is used to convert the characteristic wavelength results calculated by the DSP data processing module 8 into temperature data.

[0067] At the same time, refer to Figure 2 The present invention discloses a multi-channel semiconductor absorption spectroscopy temperature measurement method, which is used in the above-mentioned multi-channel semiconductor absorption spectroscopy temperature measurement system, comprising the following steps:

[0068] Step 1: MCU 9 sends a command to the synchronization trigger module 4, so that the synchronization trigger module 4 triggers the Nth LED 11 in the light source module 1 to start working;

[0069] Step 2: The light emitted by the Nth LED 11 is transmitted to the reference optical fiber probe 32 through the Nth flange 21, and then transmitted from the reference optical fiber probe 32 to the coupling module 5 through the Nth flange 21. After coupling by the coupling module 5, it is transmitted to the CCD 6. Then, after data acquisition by the FPGA data acquisition module 7, it is transmitted to the DSP data processing module 8 for algorithm demodulation operation. The demodulated characteristic wavelength is transmitted to the MCU 9 to obtain the reference channel semiconductor absorption spectrum curve. The array length is M+1, such as Figure 3 As shown, where λ represents the wavelength and M is an integer greater than 2;

[0070] Step 3: Use the reference channel semiconductor absorption spectrum curve Calculate the effective waveform I0(λ) of the reference channel;

[0071] Step 3.1: Semiconductor absorption spectrum curve Perform a difference to get V0(λ), such as Figure 4 As shown, the array length is M;

[0072]

[0073] Where λ k is the kth wavelength value of the effective waveform I0(λ), λ k+1 is the k+1th wavelength value of the effective waveform I0(λ);

[0074] Step 3.2: Find the maximum value V of V0(λ) max and maximum value V max The index value V index ;

[0075] V max =max{V0(λ)};

[0076] Step 3.3: Take a difference on V0(λ) to get W0(λ), as Figure 5 As shown, the array length is M-1;

[0077] W0(λ)=V0(λ k+1 )-V0(λ k ),k=0,1,2,...,M-2;

[0078] Step 3.4: Find the maximum value W of W0(λ) max and maximum value W max The index value W index ;

[0079] W max =max{W0(λ)};

[0080] Step 3.5, with W index As the starting point, V index Intercept the semiconductor absorption spectrum curve for the end point Then normalization is performed to obtain the effective waveform I0(λ) of the reference channel, whose array length is L0, as shown in Figure 6 As shown;

[0081] Step 4: Set X=1;

[0082] Step 5: MCU 9 sends a command to the synchronization trigger module 4, so that the synchronization trigger module 4 triggers the X-th LED 11 in the light source module 1 to start working;

[0083] Step 6: Measure and collect the semiconductor absorption spectrum curve of the Xth temperature measurement channel The length of the array is M+1, where λ represents the wavelength and M is an integer greater than 2;

[0084] Step 7: Obtain the semiconductor absorption spectrum curve through the Xth temperature measurement channel Calculate the effective waveform I of the Xth temperature measurement channel X (α), whose array length is L X ,like Figure 7 As shown;

[0085] Step 8: Compare I0(λ) and I X (α) Perform interpolation calculation;

[0086] By linear interpolation calculation, L0, L X Convert to L, I0(λ) and I X The array length of (α) is L;

[0087] Step 9: Calculate effective waveform distance;

[0088] Reference Figure 8 The calculation formula for calculating the distance d between the effective waveform of the Xth temperature measurement channel and the effective waveform of the reference channel is as follows:

[0089]

[0090] Where L is the effective waveform I0(λ) and I X The array length of (α), λ k is the kth wavelength value of the effective waveform I0(λ), α k Is the effective waveform I X (α) kth wavelength value, I0(λ k ) is the kth spectrum amplitude of the effective waveform I0(λ), I X (α k ) is the effective waveform I X (α) kth spectral amplitude;

[0091] Step 10, read digital temperature module data 10;

[0092] MCU9 obtains the temperature τ measured by the digital temperature module 10 through instructions, that is, the ambient temperature of the reference channel;

[0093] Step 11, temperature calculation of temperature measurement channel;

[0094] As the temperature changes, the effective waveform of the semiconductor absorption spectrum of the temperature measurement channel shifts along the wavelength direction. According to the empirical value, the temperature rises by 3°C for every 1nm increase in wavelength. Therefore, the temperature value T of the Xth measurement channel can be calculated based on the distance d between the effective waveform of the semiconductor absorption spectrum of the reference channel and the effective waveform of the semiconductor absorption spectrum of the measurement channel and the ambient temperature τ of the reference channel. X ;

[0095]

[0096] Where α0 is the effective waveform I X (α) the 0th wavelength value;

[0097] Step 12: MCU9 outputs the temperature value T of the Xth measurement channel X To the LED digital tube display module 110;

[0098] Step 13: Determine whether X is equal to N-1. If so, the multi-channel temperature measurement is completed and the process ends. Otherwise, add 1 to X and return to step 5.

[0099] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them. For ordinary professional and technical personnel in this field, the specific technical solutions recorded in the above embodiments can be modified, or some of the technical features therein can be replaced by equivalents. These modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions protected by the present invention.

Claims

1. A multi-channel semiconductor absorption spectroscopy temperature measurement system, characterized by: The invention comprises an optical fiber probe module, a chassis (120), an LED digital tube display module (110) arranged on the chassis (120), and a light source module (1), a flange connection module (2), a synchronous trigger module (4), a coupling module (5), a CCD (6), an FPGA data acquisition module (7), a DSP data processing module (8), an MCU (9), and a digital temperature module (10) arranged in the chassis (120); The light source module (1) includes N LEDs (11), the flange connection module (2) includes N flanges (21), and the optical fiber probe module includes N optical fiber probes; the output end of the Xth LED (11) is connected to the Xth optical fiber probe via the Xth flange (21), and the output end of the Xth optical fiber probe is connected to the coupling module (5), CCD (6), FPGA data acquisition module (7), DSP data processing module (8), MCU (9), and LED digital tube display module (110) in sequence via the Xth flange (21); N is a positive integer not less than 2, X is a positive integer, and 1≤X≤N; The first to N-1 optical fiber probes are located outside the chassis (120) as temperature measurement optical fiber probes (31) and are used to provide a semiconductor absorption spectrum curve of a corresponding temperature measurement channel; the Nth optical fiber probe is located inside the chassis (120) as a reference optical fiber probe (32), and the output end of the reference optical fiber probe (32) is connected to the input end of the digital temperature module (10), and the output end of the digital temperature module (10) is connected to the MCU (9) and is used to provide a semiconductor absorption spectrum curve of a corresponding reference channel; The N LEDs (11) are respectively connected to the synchronous trigger module (4), and the synchronous trigger module (4) is connected to the MCU (9) for switching different channel optical fibers to perform time-sharing work; The CCD (6) and the MCU (9) are connected to each other and are used to correspond the spectrum signals collected by different optical fiber probes working in time sharing to their channel numbers one by one; The MCU (9) is used to convert the characteristic wavelength result calculated by the DSP data processing module (8) into temperature data.

2. A multi-channel semiconductor absorption spectroscopy temperature measurement method, characterized in that: The multi-channel semiconductor absorption spectroscopy temperature measurement system according to claim 1 comprises the following steps: Step 1: The MCU (9) sends an instruction to the synchronization trigger module (4), so that the synchronization trigger module (4) triggers the Nth LED (11) in the light source module (1) to start working; Step 2: The light emitted by the Nth LED (11) is transmitted to the temperature measuring optical fiber probe (31) through the Nth flange (21), and then transmitted from the temperature measuring optical fiber probe (31) to the coupling module (5) through the Nth flange (21), and then transmitted to the CCD (6) after coupling by the coupling module (5), and then the data is collected by the FPGA data acquisition module (7), and then transmitted to the DSP data processing module (8) for algorithm demodulation operation, and the demodulated characteristic wavelength is transmitted to the MCU (9) to obtain the reference channel semiconductor absorption spectrum curve. The length of the array is M+1, where λ represents the wavelength and M is an integer greater than 2; Step 3: Use the reference channel semiconductor absorption spectrum curve Calculate the effective waveform I0(λ) of the reference channel; Step 4: Set X=1; Step 5: The MCU (9) sends an instruction to the synchronization trigger module (4), so that the synchronization trigger module (4) triggers the Xth LED (11) in the light source module (1) to start working; Step 6: Measure and collect the semiconductor absorption spectrum curve of the Xth temperature measurement channel The length of the array is M+1, where λ represents the wavelength and M is an integer greater than 2; Step 7: Obtain the semiconductor absorption spectrum curve through the Xth temperature measurement channel Calculate the effective waveform I of the Xth temperature measurement channel X (α); Step 8: Compare I0(λ) and I X (α) Perform interpolation calculation; Step 9. Calculate I0(λ) and I X (α) distance d; Step 10, reading data from the digital temperature module (10); The MCU (9) obtains the temperature τ measured by the digital temperature module (10) through instructions to obtain the ambient temperature of the reference channel; Step 11, temperature calculation of temperature measurement channel; According to the relationship between wavelength drift and temperature change, combined with I0(λ) and I X (α) distance d, temperature τ, calculate the temperature value T of the Xth measurement channel X ; Step 12: MCU outputs the temperature value T of the Xth measurement channel X To the LED digital tube display module (110); Step 13: Determine whether X is equal to N-1. If so, the multi-channel temperature measurement is completed and the process ends. Otherwise, add 1 to X and return to step 5.

3. A multi-channel semiconductor absorption spectroscopy temperature measurement method according to claim 2, characterized in that: The step 3 is specifically as follows: Step 3.1: Semiconductor absorption spectrum curve Perform a difference to obtain V0(λ), whose array length is M; Where λ k is the kth wavelength value of the effective waveform I0(λ), λ k+1 is the k+1th wavelength value of the effective waveform I0(λ); Step 3.2: Find the maximum value V of V0(λ) max and maximum value V max The index value V index ; V max =max{V0(λ)}; Step 3.3: Perform a difference on V0(λ) to obtain W0(λ), whose array length is M-1; W0(λ)=V0(λ k+1 )-V0(λ k ),k=0,1,2,...,M-2; Step 3.4: Find the maximum value W of W0(λ) max and maximum value W max The index value W index ; IN max =max{W0(λ)}; Step 3.5, with W index As the starting point, V index Intercept the semiconductor absorption spectrum curve for the end point Then, normalization processing is performed to obtain the effective waveform I0(λ) of the reference channel, whose array length is L0.

4. A multi-channel semiconductor absorption spectroscopy temperature measurement method according to claim 3, characterized in that: The step 7 is specifically as follows: adopting the method described in step 3, through the X-th temperature measurement channel semiconductor absorption spectrum curve Calculate the effective waveform I of the Xth temperature measurement channel X (α), whose array length is L X .

5. The multi-channel semiconductor absorption spectroscopy temperature measurement method according to claim 4, characterized in that: In step 8, linear interpolation is performed to make I0(λ) and I X The array length of (α) is L; In step 9, the I0(λ) and I X The distance d of (α) is calculated as follows: Where L is the effective waveform I0(λ) and I X The array length of (α), α k Is the effective waveform I X (α) kth wavelength value, I0(λ k ) is the kth spectrum amplitude of the effective waveform I0(λ), I X (α k ) is the effective waveform I X (α) kth spectral amplitude.

6. The multi-channel semiconductor absorption spectroscopy temperature measurement method according to claim 5, characterized in that: The step 11 is specifically as follows: according to the empirical value, the wavelength is shifted by 1nm and the temperature is increased by A℃, and the value of I0(λ) is calculated by combining I X (α) The distance d and temperature τ are calculated according to the following formula: X : Where α0 is the effective waveform I X (α) The 0th wavelength value.

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