Ion source

Abstract

Embodiments of the present application provide an ion source, comprising: a vaporization mechanism configured to vaporize a solid material to form saturated vapor; a distribution mechanism comprising at least one gas inlet and a plurality of gas outlets, the gas inlet being connected to the vaporization mechanism; a plurality of plasma generation mechanisms, each of which is connected to a gas outlet to receive the saturated vapor from the vaporization mechanism, the plasma generation mechanism being formed with a discharge cavity in which the saturated vapor can be ionized to form a plasma; an electron emission mechanism configured to emit electrons into the discharge cavity to ionize the saturated vapor in the discharge cavity; and an extraction mechanism configured to apply an electric field to the plasma formed in the discharge cavity to extract the plasma out of the discharge cavity and form an ion beam.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of electromagnetic devices, in particular to an ion source. BACKGROUND

[0002] An isotope electromagnetic separator is a main device for separating isotopes, and an ion source is used to provide an ion beam for the isotope electromagnetic separator. The intensity of the ion beam directly affects the production capacity of the isotope electromagnetic separator. The intensity of the ion beam provided by the ion source in the related art is limited, which limits the production capacity of the isotope electromagnetic separator. SUMMARY

[0003] To solve at least one of the above technical problems in the prior art and other aspects, the present application provides an ion source.

[0004] The ion source provided by the embodiments of the present application is used to provide an ion beam, and includes: a gasification mechanism configured to gasify a solid raw material to form saturated steam; a distribution mechanism provided with at least one gas inlet and a plurality of gas outlets, the gas inlet being connected to the gasification mechanism; a plurality of plasma generation mechanisms respectively connected to the gas outlets to receive the saturated steam from the gasification mechanism, the plasma generation mechanisms being formed with discharge cavities in which the saturated steam can be ionized to form plasma; an electron emission mechanism configured to emit electrons into the discharge cavities to ionize the saturated steam in the discharge cavities; and an extraction mechanism configured to apply an electric field to the plasma formed in the discharge cavities to extract the plasma out of the discharge cavities and form an ion beam.

[0005] The ion source provided by the embodiments of the present application can provide an ion beam with higher intensity, thereby effectively improving the production capacity of the isotope electromagnetic separator. BRIEF DESCRIPTION OF DRAWINGS

[0006] Figure 1 FIG. 1 is a schematic view of an ion source according to an embodiment of the present application;

[0007] Figure 2 FIG. 2 is a top view of the ion source according to the embodiment of the present application;

[0008] Figure 3 FIG. 3 is a sectional view of the ion source according to the embodiment of the present application;

[0009] Figure 4 FIG. 4 is a schematic view of an ion source according to another embodiment of the present application;

[0010] Figure 5 FIG. 5 is a schematic view of a distribution mechanism according to an embodiment of the present application;

[0011] Figure 6 a disassembled view of a distribution mechanism according to an embodiment of the present application;

[0012] Figure 7 a schematic view of a distribution mechanism according to another embodiment of the present application;

[0013] Figure 8 a schematic view of a support mechanism according to an embodiment of the present application;

[0014] Figure 9 a partial sectional view of an ion source according to another embodiment of the present application;

[0015] Figure 10 a schematic view of a vaporization mechanism according to an embodiment of the present application;

[0016] Figure 11 a schematic view of a filament support structure according to an embodiment of the present application. DETAILED DESCRIPTION

[0017] In order to make the objects, technical solutions and advantages of the present application clearer, the following will further describe the present application with reference to the embodiments and the accompanying drawings.

[0018] Embodiments of the present application first provide an ion source, which is mainly applied to provide ion beam current for an electromagnetic separator, and of course, can also be applied to other application scenarios requiring to provide ion beam current, such as ion accelerators, mass spectrometers, electromagnetic isotope separators, ion implanters, ion beam etching devices, ion thrusters, and neutral beam injectors in controlled thermonuclear devices, without limitation.

[0019] The basic principle of the ion source to generate ion beam current is to heat solid raw materials to form saturated vapor, and the saturated vapor is ionized to form plasma under the action of electrons, and the plasma is extracted to form an ion beam current. The ion beam current provided by the ion source in the related art is usually low in intensity, which affects the working efficiency of the device.

[0020] Therefore, embodiments of the present application provide an ion source, which, with reference to Figures 1-3 The ion source provided by the embodiments of the present application includes a vaporization mechanism 10, a distribution mechanism 20, a plurality of plasma generation mechanisms 30, an electron emission mechanism 40, and an extraction mechanism 50.

[0021] The gasification mechanism 10 is used to gasify the solid raw material to form saturated steam. The solid raw material herein can include, but is not limited to, rubidium chloride (RbCl) and other compounds. Any suitable compound known in the art can be used as the solid raw material herein without limitation. The gasification mechanism 10 can be provided with a suitable container and heating device. In actual use, the solid raw material can be placed in the container and heated by the heating device to gasify the solid raw material to form saturated steam.

[0022] The distribution mechanism 20 is provided with at least one gas inlet 201 and a plurality of gas outlets 202. The gas inlet 201 is connected to the gasification mechanism 10, and the plurality of gas outlets 202 are respectively connected to the plurality of plasma generation mechanisms 30. Thus, the saturated steam formed by the gasification of the solid raw material in the gasification mechanism 10 can be distributed to the plurality of plasma generation mechanisms 30 by the distribution mechanism 20.

[0023] Each plasma generation mechanism 30 is formed with a discharge cavity 301 in which the saturated steam can be ionized to form plasma. The electron emission mechanism 40 can emit electrons into the discharge cavity 301. The electrons entering the discharge cavity 301 will collide with the saturated steam, thereby causing the saturated steam in the discharge cavity 301 to ionize to form plasma. The plasma formed in the discharge cavity 301 can be extracted from the discharge cavity 301 under the action of an electric field applied by the extraction mechanism 30 and form an ion beam.

[0024] Although Figures 1-3 In the embodiments shown, two plasma generation mechanisms 30 are provided. However, those skilled in the art can understand that a larger number of plasma generation mechanisms 30 can be provided according to actual conditions. The specific structure of each plasma generation mechanism 30 can refer to related technologies in the art, and the specific structures of several plasma generation mechanisms 30 will be described in detail in the relevant part below, which will not be described here.

[0025] In order to enable the electron emission mechanism 40 to emit electrons into the discharge cavity 301, the plasma generation mechanism 30 can be provided with a structure allowing electrons to pass through, which can correspond to the position of the electron emission mechanism 40, for example, Figure 3 In the embodiments shown in FIG. 1, the electron emission mechanism 40 is arranged above the plasma generation mechanism 30. Correspondingly, the top of the discharge cavity 301 is provided with an electron window 302, so that the electrons emitted by the electron emission mechanism 40 can enter the discharge cavity 301 through the electron window 302.

[0026] The electron emission mechanism 40 can be any suitable device capable of emitting electrons as provided in the related art. For example, the electron emission mechanism 40 can be a hot cathode discharge device, which can emit electrons by heating a cathode through a filament. The specific structure of the electron emission mechanism 40 will be described in detail in the relevant part below, and thus will not be described here.

[0027] The extraction mechanism 50 can apply an electric field to the discharge cavity 301 to extract the plasma in the discharge cavity 301. In some embodiments, the extraction mechanism 50 can include one or more extraction electrodes arranged inside or on one side of the plasma generation mechanism 30. For example, the extraction mechanism 50 can include a first electrode arranged on a wall of the plasma generation mechanism 30, a second electrode and a third electrode arranged on one side of the plasma generation mechanism 30. The first electrode can be arranged in the wall on the side where the discharge cavity 301 has an outlet (extraction slit), and the second electrode and the third electrode can be electrode plates.

[0028] In some embodiments, the second electrode can be at a negative potential, and the third electrode can be at zero potential. This arrangement can prevent the electrons in the extracted ion beam from being attracted to the second electrode by the positive potential, thereby preventing the discharge cavity 301 from overheating and being damaged. On the other hand, this arrangement can prevent the loss of electrons in the extracted ion beam, which is beneficial for space charge compensation and focusing of the ion beam. This can help to improve the current of the extracted ion beam.

[0029] It can be understood that the size of the discharge cavity 301 formed by a single plasma generation mechanism 30 is strictly limited. An inappropriate size can make it difficult for the saturated vapor to complete effective ionization to form plasma, which is one of the main factors that restricts the intensity of the ion beam formed by the ion source. In the present application, multiple plasma generation mechanisms 30 are arranged in an ion source, and the distribution mechanism 20 is used to distribute the saturated vapor formed by the vaporization mechanism 10 to each plasma generation mechanism 30. Therefore, the multiple plasma generation mechanisms 30 can work simultaneously and generate ion beams, thereby effectively improving the intensity of the ion beam that can be generated by the ion source.

[0030] It can be understood that, in actual use, it is necessary to ensure that the opening (extraction slit) of the plasma generation mechanism 30 and the opening (extraction slit) of the extraction mechanism 50 are accurately aligned, so that the plasma can be successfully extracted to form an ion beam. Compared with an ion source having only one plasma generation mechanism 30, the ion source in the present application has multiple plasma generation mechanisms 30, which need to be aligned with the extraction mechanism 50 at the same time, which is more difficult to achieve.

[0031] To this end, the plurality of plasma generating mechanisms 30 are further arranged in the embodiment to be adjustable in relative position to each other, so that the plurality of plasma generating mechanisms 30 can be aligned with the extraction mechanism 50 at the same time by adjusting the relative position between the plasma generating mechanisms 30, to some extent, reducing the requirement for accuracy during production, saving the manufacturing cost.

[0032] The relative position adjustable mentioned in the embodiment refers to that each plasma generating mechanism 30 can move relative to other plasma generating mechanisms 30 in at least one degree of freedom, for example, referring to the X direction and the Y direction. Figure 1 And Figure 4 In the embodiment in which the two plasma generating mechanisms 30 are arranged side by side, the interval between the two plasma generating mechanisms 30 usually needs to be adjusted, Figure 4 The interval between the two plasma generating mechanisms 30 in the embodiment shown is expanded compared with Figure 1 In some other embodiments, there can also be a need to adjust the relative position between the plasma generating mechanisms 30 from other degrees of freedom, and those skilled in the art can arrange according to the actual needs.

[0033] In actual use, the plasma generating mechanisms 30 are usually fixed on a component or an external device, and the relative position between the plasma generating mechanisms 30 can be adjusted by sliding connection between the plasma generating mechanisms 30 and the components.

[0034] In some embodiments, each plasma generating mechanism 30 can specifically include a strip-shaped member 31 and an extraction plate 32. The strip-shaped member 31 is in communication with the gas outlet 202, and a through groove is formed on the wall surface opposite to the gas outlet 202, and the extraction plate 32 is installed at the slot position between the two groove walls of the through groove, so as to cover the slot of the through groove to form a discharge cavity 301, and the extraction plate 32 is provided with an extraction slot 303 for extracting plasma from the discharge cavity 301.

[0035] In some embodiments, the strip-shaped members 31 of the plurality of plasma generating mechanisms 30 can be arranged in parallel with each other, so as to more conveniently adjust the positional relationship of the plurality of plasma generating mechanisms 30, and more easily align the extraction slots 303 of the plurality of plasma generating mechanisms 30 with the extraction mechanism 50 at the same time.

[0036] In some embodiments, the plasma generating mechanism 30 further includes a reflecting shell 33 and a heating wire 34. The reflecting shell 33 is arranged outside the strip-shaped member 31, and the heating wire 34 is fixedly connected with the reflecting shell 33.

[0037] The reflective shell 33 is configured to reflect the ions and heat generated by the plasma generating mechanism 30, so as to avoid the loss of the ions and heat. For example, the reflective shell 33 can be provided with a heat insulation layer, and an electric field can be formed on the reflective shell 33 to achieve the reflection of the ions and heat.

[0038] The heating wire 34 is configured to heat the discharge cavity 301 to work at a suitable temperature. The heating wire 34 can be one of the commonly used heating wires in the art, which can be fixedly connected to the reflective shell 33 in an insulating manner to avoid short circuit between the two. The number and position of the heating wire 34 can be determined by the specific heating requirement, which is not limited.

[0039] In some embodiments, when the distance between the plasma generating mechanisms 30 is close, the multiple plasma generating mechanisms 30 can share one reflective shell 33, for example, the embodiment shown in FIG. 2A, in which two plasma generating mechanisms 30 share one reflective shell 33. Figure 1 In some embodiments, if the distance between the multiple plasma generating mechanisms 30 is far, each plasma generating mechanism 30 can be provided with one reflective shell 33, for example, the embodiment shown in FIG. 2B, in which two plasma generating mechanisms 30 are respectively provided with one reflective shell 33. Figure 4 In some embodiments, if the distance between the multiple plasma generating mechanisms 30 is far, each plasma generating mechanism 30 can be provided with one reflective shell 33, for example, the embodiment shown in FIG. 2B, in which two plasma generating mechanisms 30 are respectively provided with one reflective shell 33.

[0040] The reflective shell 33 can be adapted to the shape of the strip-shaped member 31 to better provide the reflection function. The specification of the reflective shell 33 can be determined according to the specification of the strip-shaped member used, which is not limited.

[0041] In some embodiments, whether the multiple plasma generating mechanisms 30 share the reflective shell 33 or are respectively provided with the reflective shell 33, it is necessary to ensure that the heating wires 34 provided for all the plasma generating mechanisms 30 have the same layout and number. This is to ensure that the discharge cavities 301 of the plasma generating mechanisms 30 have the same temperature, so that the saturated steam in the distribution mechanism 20 can enter each discharge cavity 301 more uniformly, and the gas distribution will not be uneven due to the temperature difference.

[0042] In some embodiments, the lead-out mechanism 50 can be arranged opposite to the lead-out plate 32, and further configured to be adjustable in distance with the lead-out plate 32, to ensure that the lead-out slit on the lead-out mechanism 50 can be aligned with the lead-out slit 303 on the lead-out plate 32, and have a suitable distance, so as to more efficiently lead out the plasma to form an ion beam.

[0043] Further, in some embodiments described above, the plurality of plasma generating mechanisms 30 are arranged in a relative position adjustable manner, and the plurality of plasma generating mechanisms 30 are connected to the distribution mechanism 20, thus, when the relative position of the plurality of plasma generating mechanisms 30 is changed, the distribution mechanism 20 needs to be adjusted accordingly. Meanwhile, in some other embodiments, even if the relative position of the plurality of plasma generating mechanisms 30 is not adjustable, when the specifications of the plurality of plasma generating mechanisms 30 are changed, the distribution mechanism 20 also needs to be adjusted.

[0044] To this end, in some embodiments, referring to Figure 5 , the distribution mechanism 20 can include inlet pipes 21 and a plurality of outlet pipes 22, each of the inlet pipes 21 is provided with a gas inlet 201, and each of the outlet pipes 22 is provided with a gas outlet 202, wherein the plurality of outlet pipes 22 are slidably connected to the inlet pipes 21, so that the relative position of the plurality of outlet pipes 22 is adjustable. In this embodiment, the relative position of the plurality of outlet pipes 22 of the distribution mechanism 20 is adjustable, thus, when the relative position of the plurality of plasma generating mechanisms 30 is changed, or the specifications of the plurality of plasma generating mechanisms 30 are changed, the relative position of the plurality of outlet pipes 22 can be directly adjusted to realize the connection between the plurality of outlet pipes 22 and the plurality of plasma generating mechanisms 30, without the need to replace a new distribution mechanism 20.

[0045] The sliding connection between the outlet pipes 22 and the inlet pipes 21 can be set according to the adjustment requirement of the relative position of the plasma generating mechanisms 30, for example, when the plasma generating mechanisms 30 are arranged in a distance adjustable manner, the outlet pipes 22 are also arranged in a distance adjustable manner.

[0046] Figure 6 A schematic diagram of the distribution mechanism 20 in a disassembled state in some embodiments is shown, referring to Figure 5 and Figure 6 In these embodiments, the outlet pipes 22 can include connecting portions 221 and extending portions 222, in use, the connecting portions 221 can be at least partially inserted into the inlet pipes 21 and can slide in the inlet pipes 21 to realize the adjustment of the relative position of the outlet pipes 22, and the extending portions 222 can extend in a direction substantially perpendicular to the extending direction of the inlet pipes 21 after installation, and the gas outlets 202 can be arranged at the end of the extending portions 222 away from the inlet pipes 21. The inlet pipes 21 and the outlet pipes 22 can be sealed in a suitable manner while being slidably connected, for example, a sealing gasket can be arranged at the connection between the inlet pipes 21 and the outlet pipes 22, or the inlet pipes 21 and the outlet pipes 22 can be relatively tightly fitted to ensure the air tightness.

[0047] In the embodiment, the relative positions of the outlet tubes 22 are adjusted by the sliding connection between the connecting portions 221 and the inlet tube 21, and the structure is relatively simple. On the other hand, the gas outlet 202 is arranged at the distal end of the extension portion 222, and the extension portion 222 extends towards a direction perpendicular to the extending direction of the inlet tube 21, so that the plasma generating mechanism 30 connected with the gas outlet 202 is relatively far away from the sliding connection between the inlet tube 21 and the outlet tube 22. In actual use, even in the state that the plasma generating mechanism 30 is connected with the distribution mechanism 20, the operator can still conveniently adjust the positions of the outlet tubes 22 without disassembling the plasma generating mechanism 30, and the use is convenient.

[0048] Further, in the embodiment with two plasma generating mechanisms 30 shown in Figures 1-4 In the embodiment, the inlet tube 21 actually forms a three-way structure, and the outlet tubes 22 are connected to two openings of the inlet tube 21, so that the structure of the distribution mechanism 20 is further optimized.

[0049] In some embodiments, the plurality of outlet tubes 22 can be symmetrically distributed around the gas inlet 201. It can be understood that the symmetrically distributed arrangement helps to more evenly distribute the saturated steam entering the distribution mechanism 20 into each plasma generating mechanism 30, so as to ensure that each plasma generating mechanism 30 can generate plasma with high efficiency, and maximize the intensity of the ion beam current.

[0050] As described above, in some embodiments, the relative positions of the plurality of outlet tubes 22 are adjustable, and in actual use, a person skilled in the art can reasonably select the adjustment mode to make the plurality of outlet tubes 22 still symmetrically distributed around the gas inlet 201 after the relative positions are changed, so as to ensure the uniformity of the saturated steam distribution.

[0051] In some embodiments, referring to Figure 7The inlet pipe 21 can be provided with a plurality of gas inlets 201. Understandably, the ion source provided by the embodiments of the present application is provided with a plurality of plasma generating mechanisms 30, and therefore the demand for the amount of saturated steam is also increased accordingly. If the saturated steam cannot be provided in sufficient quantity, the performance of the plasma generating mechanism 30 cannot be maximized. Therefore, a plurality of gasification mechanisms 10 can be provided, or a plurality of containers can be provided in one gasification mechanism 10 to simultaneously generate saturated steam, so as to increase the source of saturated steam, thereby ensuring sufficient supply of saturated steam. Some specific arrangement modes will be described in the relevant part below. Correspondingly, the inlet pipe 21 needs to be provided with a plurality of gas inlets 201 to distribute the saturated steam from multiple sources to the plurality of plasma generating mechanisms 30.

[0052] In some embodiments, the plurality of gas inlets 201 can be arranged side by side on the wall of the inlet pipe 21. In some other embodiments, the plurality of gas inlets 201 can also be arranged on the inlet pipe 21 in other suitable manners, and the arrangement mode can depend on the arrangement mode of the gasification mechanism 10.

[0053] Further, in the above-mentioned embodiments with a plurality of gas inlets 201, the plurality of gas inlets 201 can be arranged in central symmetry, the plurality of gas outlets 202 are also arranged in central symmetry, and the symmetry centers of the plurality of gas inlets 201 and the plurality of gas outlets 202 coincide, thereby ensuring the uniformity of gas distribution.

[0054] In some embodiments, still referring to Figures 1-4 , the ion source can further include a support mechanism 60 for supporting the plasma generating mechanism 30, thereby maintaining the relative positions between the gasification mechanism 10, the distribution mechanism 20 and the plasma generating mechanism 30. The support mechanism 60 can be a flange, a bracket or other suitable support structure. Those skilled in the art can select a suitable support mechanism 60 according to the positional relationship between the specific gasification mechanism 10, the distribution mechanism 20 and the plasma generating mechanism 30.

[0055] In some embodiments, referring to Figure 1 , Figure 4 and Figure 8 , the support mechanism 60 can specifically include a plate body 61 and a through hole 62. The plate body 61 is used to connect with the plasma generating mechanism 30 to support the plasma generating mechanism 30. In specific use, the plasma generating mechanism 30 and the distribution mechanism 20 can be arranged on one side of the plate body 61, and the gasification mechanism 10 is arranged on the other side of the plate body 61. The through hole 62 is arranged on the plate body 61, and the through hole 62 allows the gasification mechanism 10 to at least partially pass through the plate body 61 to connect with the distribution mechanism 20 arranged on the other side of the plate body 61.

[0056] In this embodiment, the support mechanism 60 is actually a flange structure, which can support the plasma generating mechanism 30 and also provide support to the gasification mechanism 10, thereby ensuring the stability of the entire ion source and reducing the possibility of breakage or deviation of the distribution mechanism 20 due to external forces.

[0057] In some embodiments, as described above, the relative positions of multiple plasma generating mechanisms 30 can need to be adjustable, and in such embodiments, the support mechanism 60 can further include guide slots 63 and connecting members 64. The guide slots 63 can be provided on the side of the plate body 61 facing the plasma generating mechanism 30, and one end of the connecting member 64 can be slidably provided in the guide slot 63, and the other end can be connected to the plasma generating mechanism 30.

[0058] In this embodiment, the guide slots 63 and the connecting members 64 that can slide in the guide slots 63 are provided on the plate body 61 to achieve the connection of the plasma generating mechanism 30, so that the position of the plasma generating mechanism 30 can be conveniently and quickly adjusted by sliding the connecting member 64. The specific arrangement of the guide slots 63 can be determined according to the position adjustment requirements of the plasma generating mechanism 30, for example, in the embodiment shown in FIG. 2, the distance between the two plasma generating mechanisms 30 needs to be adjusted, and the guide slots 63 can be arranged in the shape of a long oval as shown in FIG. 2. Figures 1-4 Figure 8

[0059] It can be understood that each plasma generating mechanism 30 needs at least one connecting member 64 for connection, and these connecting members 64 can share one guide slot 63 or be arranged in different guide slots 63, which is not limited.

[0060] The connecting member 64 can be any suitable connecting structure, and the guide slot 63 can be adapted to the connecting member 64. As an example, the connecting member 64 can include a bolt, and at this time, the guide slot 63 can be a through hole passing through the plate body 61, and the bolt can freely slide in and out of the guide slot 63. As another example, the connecting member 64 can include a slider, and the guide slot 63 can be a sliding groove.

[0061] In this embodiment, by providing the guide slots 63 and the connecting members 64, the support mechanism 60 can better adapt to the position adjustment requirements of the plasma generating mechanism 30, and also can well adapt to different specifications of the plasma generating mechanism 30, avoiding frequent replacement of the support mechanism 60 in actual use.

[0062] ​​In some embodiments, the connecting member 64 can extend towards the direction away from the plate body 61, so that a gap is formed between the plasma generating mechanism 30 and the plate body 61, and the dispensing mechanism 20 can be arranged in the gap. As shown in Figure 1 and Figure 4 In the present embodiment, the connecting member 64 is used to form a gap between the plate body 61 and the plasma generating mechanism 30, so that the dispensing mechanism 20 can be arranged in the gap, and when the operator adjusts the position of the plasma generating mechanism 30, the position of the outlet pipe 22 in the dispensing mechanism 20 can be adjusted simultaneously via the gap, so that the operation is more convenient.

[0063] In some embodiments, the connecting member 64 and the plasma generating mechanism 30 can be slidingly connected, so that the plasma generating mechanism 20 can move towards or away from the plate body 61. In the present embodiment, the plasma generating mechanism 20 is further provided with the ability to adjust the position in more degrees of freedom.

[0064] In some embodiments, the support mechanism 60 can further include a fixing member 65 configured to fix the connecting member 64 at a target position in the guide slot, so that the connecting member 64 cannot continue to slide, thereby ensuring the stability of the plasma generating mechanism 30 during actual use and avoiding accidental sliding. The target position can be a suitable position determined by the operator after debugging during actual use, which is not limited. The fixing member 65 can be reasonably arranged according to the type of the connecting member 64 used, for example, if the connecting member 64 used is a bolt, the fixing member 65 can be two nuts, which can be screwed into the bolt from both ends of the bolt and abut against both sides of the plate body 61, so as to fix the connecting member 64 in the guide slot 63. For example, if the connecting member 64 used is a sliding block, the fixing member 65 can be an abutting structure, which can abut the connecting member 64 in the guide slot 63, so that the connecting member 64 cannot continue to slide.

[0065] In some embodiments, as shown in Figure 8 , the projection surface shape of the guide slot 63 can be an oblong shape, and in some other embodiments, the projection surface shape of the guide slot 63 can also be one of a rectangular shape, an elliptical shape and other shapes, which is not limited.

[0066] In some embodiments, the support mechanism 60 can include a plurality of guide slot groups, each guide slot group including at least two guide slots 63 located in different directions of the through hole 62, and each guide slot group corresponding to a connecting member 64 used to connect with a plasma generating mechanism 20. Still referring to Figure 8 , in the present embodiment, the connecting member 64 is used to form a gap between the plate body 61 and the plasma generating mechanism 30, so that the dispensing mechanism 20 can be arranged in the gap, and when the operator adjusts the position of the plasma generating mechanism 30, the position of the outlet pipe 22 in the dispensing mechanism 20 can be adjusted simultaneously via the gap, so that the operation is more convenient. Figure 8The two guide grooves 63 in the left half of the middle plate body 61 can form a group, and the two guide grooves 63 in the right half can form another group. The two guide grooves 63 in one group are used to connect with one plasma generating mechanism 30. In this embodiment, one plasma generating mechanism 30 is fixed to multiple connecting pieces 64, which increases the stability. In addition, the multiple connecting pieces 64 are arranged in different directions of the through hole 62, so that the relative position between the plasma generating mechanism 30 and the gasification mechanism 10 can also be maintained in a relatively stable state.

[0067] In some embodiments, multiple guide groove groups can be symmetrically distributed around the through hole 62, so that the support mechanism 60 and the distribution mechanism 20 connected between the gasification mechanism 10 and the plasma generating mechanism 30 will not be tilted, deformed, or the like due to uneven force, further ensuring the stability of each mechanism in the entire ion source.

[0068] In some embodiments, the gasification mechanism 10 can specifically include a crucible 11 and a heating piece 12. The crucible 11 is used to accommodate solid raw materials, and the heating piece 12 can heat the crucible 11 to gasify the solid raw materials to form saturated steam.

[0069] In some embodiments, as described above, the gasification mechanism 10 can need to provide more saturated steam for multiple plasma generating mechanisms 30 to use. For this purpose, referring to Figure 9 , the gasification mechanism can further include multiple crucibles 11 to process more solid raw materials and provide more saturated steam.

[0070] In some embodiments, the multiple crucibles 11 can be arranged in parallel with each other and extend towards the plasma generating mechanism 30. In this embodiment, each crucible 11 can be columnar and arranged in parallel with each other, so that the overall volume of the ion source is not excessively large due to the arrangement of multiple crucibles 11.

[0071] In some embodiments, adjacent crucibles 11 can be arranged in abutment with each other, so as to further reduce the overall volume of the ion source. In addition, the abutment of the crucibles 11 can make the heat provided by the heating piece 12 more efficiently utilized, improving the gasification efficiency.

[0072] In some embodiments, the crucible 11 and the heating piece 12 can be arranged in a heat-insulating shell.

[0073] In some embodiments, referring to Figure 10The heating member 12 can be extended on the upper and lower surfaces of the multiple crucibles 11 in the direction in which the multiple crucibles 11 extend and insulated from the multiple crucibles 11. As described above, the multiple crucibles 11 are arranged in parallel to each other and extend towards the plasma generating mechanism 30, while the upper and lower surfaces of the heating member 12 in the direction in which the multiple crucibles 11 extend are extended, so as to improve the heating efficiency of the heating member 12 and make the heating of the multiple crucibles 11 more uniform. Further, the heating member 12 is insulated from the multiple crucibles 11 to avoid short circuit.

[0074] In some embodiments, still referring to Figure 10 The heating member 12 can be in the form of a wire, which can be one of the commonly used heating wires in the art, such as a graphite heating wire. The heating member 12 is extended in a serpentine manner on the upper and lower surfaces of the multiple crucibles 11 in the direction in which the multiple crucibles 11 extend. Specifically, the heating member 12 can be extended in a serpentine manner on the upper surfaces of the multiple crucibles 11, then be introduced onto the lower surfaces of the multiple crucibles 11 via the side surface of the outermost one of the multiple crucibles 11, and then be continued to be extended in a serpentine manner. In this embodiment, only one heating member 12 can be used to simultaneously heat the multiple crucibles 11, which simplifies the electrical structure of the ion source and makes it more convenient to arrange the power supply lines. Meanwhile, the serpentine extension of the heating member 12 also ensures that the heating member 12 has sufficient contact area with the multiple crucibles 11, so as to ensure the heating efficiency.

[0075] In some embodiments, referring to Figure 3 The electron emitting mechanism 40 can specifically include multiple cathodes 41 corresponding to the multiple plasma generating mechanisms, multiple filaments 42 corresponding to the multiple cathodes, and a filament support structure 43.

[0076] Each cathode 41 is arranged on one side of the corresponding plasma generating mechanism 30, specifically, it can be arranged at a position corresponding to the electron introduction structure (such as the electron window 302) at the discharge cavity 301. The filament 42 is used to heat the cathode 41 so that it can emit electrons into the discharge cavity 301, and the filament support structure 43 is used to support the filament 42. The cathode 41 can be fixedly connected to the plasma generating mechanism 30, while the filament support structure 43 can be fixedly connected to some external structure or some mechanism in the ion source. For example, in some embodiments, the filament support structure 43 can be connected to the support mechanism 60 described above.

[0077] Further, as described above, the position of the plasma generating mechanism 30 can be changed, in which case the position of the cathode 41 will also be changed, and the position of the filament 42 needs to be changed to effectively heat the cathode 41. Therefore, in some embodiments, the filament support structure 43 is arranged such that each filament 42 can move in at least two degrees of freedom to adjust the relative position between the filament 42 and the cathode 41 so as to still be able to align with the cathode 41 after the position of the cathode 41 is changed, so that when the position, size, etc. of the plasma generating mechanism 30 is changed, the filament 42 or the filament support structure 43 does not need to be replaced.

[0078] In some embodiments, referring to Figure 11 , the filament support structure 43 can specifically include a first support unit 431 and a second support unit 432, the first support unit 431 is provided with a sliding groove 4311, which enables the first support unit 431 to adjust the position in the first direction when the first support unit 431 is installed to the ion source. For example, as described above, the first support unit 431 can be connected to the support mechanism 60 via the sliding groove 4311 to enable it to slide relative to the support mechanism 60.

[0079] The second support unit 432 is connected to the first support unit 431 and can slide relative to the first support unit 431 in the second direction, and the second support unit 432 is provided with a mounting portion 4321, and the filament 42 can be mounted in the mounting portion 4321. The sliding between the second support unit 432 and the first support unit 431 can be achieved by a sliding connection structure commonly used in the art, such as a sliding groove, a sliding rail, etc., which is not limited.

[0080] In this embodiment, the position adjustment of the filament 42 in the first degree of freedom is achieved by the sliding between the first support unit 431 and the components connected thereto, and the position adjustment of the filament 42 in the second degree of freedom is achieved by the sliding between the second support unit 432 and the first support unit 431.

[0081] In some embodiments, a plurality of mounting portions are formed on the second support unit 432, so that one filament support structure 43 can support a plurality of filaments 42 at the same time, simplify the overall structure, and the positions of the plurality of filaments 42 can be adjusted at the same time, simplify the operation.

[0082] In some other embodiments, a plurality of filament support structures 43 can be provided, and each filament support structure 43 supports one filament 42, so that the position of each filament 42 can be adjusted individually, so that the adjustment of the filament 42 is more refined.

[0083] In some embodiments, the mounting portion 4321 is in the shape of a groove, and a gap is formed between the mounting portion 4321 and the filament 42 after the filament 42 is mounted to the mounting portion 4321, so that the filament 42 can slide in the mounting portion 4321 in the third direction. In this embodiment, the freedom of movement of the filament 42 is further increased to better meet different use requirements.

[0084] In some embodiments, the first support unit 431 can include a first plate body 4312 and a second plate body 4313. The sliding groove 4311 can be arranged on the first plate body 4312, and the second plate body 4313 is connected with the first plate body 4312 in an L shape, and the second plate body 4313 is connected with the second support unit 432 in a sliding manner. In this embodiment, the sliding groove 4311 is arranged on the first plate body 4312, and the sliding connection part between the second support unit 432 and the first support unit 431 is arranged on the second plate body 4313, so that the sliding in the two degrees of freedom do not interfere with each other.

[0085] In some embodiments, the second support unit 432 can include a third plate body 4322 and a fourth plate body 4323. The third plate body 4322 is connected with the second plate body 4313 in a sliding manner, and the fourth plate body 4323 is connected with the third plate body 4322 in an L shape, and the mounting portion 4321 is arranged on the fourth plate body 4323. Similarly, the structure in this embodiment can avoid the sliding between the second support unit 432 and the first support unit 431 from interfering with the filament 42.

[0086] In some embodiments, the second support unit 432 can include a plurality of fourth plate bodies 4323, and the plurality of fourth plate bodies 4323 are arranged on the same straight line in the third direction, and each fourth plate body 4323 is provided with a mounting portion 4321. In this embodiment, a plurality of mounting portions 4321 are arranged on a plurality of fourth plate bodies 4323 respectively, so that the filament 42 does not interfere with other filaments 42 when sliding in the mounting portion 4321.

[0087] In some embodiments, a plurality of first extending portions 4314 extending towards the second direction are formed on the second plate body 4313, and a plurality of second extending portions 4324 extending towards the second direction and corresponding to the plurality of first extending portions 4314 are formed on the third plate body 4322, and each second extending portion 4324 is connected with the corresponding first extending portion 4314 in a sliding manner. In this embodiment, the sliding connection between the second plate body 4313 and the third plate body 4322 is realized through the plurality of first extending portions 4314 and the second extending portions 4324, so that the position adjustment can be performed at the position of each extending portion respectively when the position adjustment is actually performed, instead of moving as a whole, thereby simplifying the operation of position adjustment.

[0088] The embodiments of the application have been described above. However, these embodiments are merely meant to be illustrative, and not meant to limit the scope of the application. Although each of the embodiments has been described above separately, this does not mean that the measures in the individual embodiments cannot be used advantageously in combination. The scope of the application is defined by the claims appended hereto and their equivalents. Various alternatives and modifications can be made to the embodiments of the application without departing from the scope of the application, and it is intended that all such alternatives and modifications be included within the scope of the application.

Claims

1. An ion source for providing an ion beam, comprising: A gasification mechanism is used to gasify solid raw materials into saturated steam. The distribution mechanism is provided with at least one gas inlet and multiple gas outlets, wherein the gas inlet is connected to the gasification mechanism; Multiple plasma generating mechanisms are connected to the gas outlet to receive saturated vapor from the gasification mechanism. Each plasma generating mechanism has a discharge cavity in which the saturated vapor can be ionized to form plasma. An electron emission mechanism is provided, which is capable of emitting electrons into the discharge cavity to ionize the saturated vapor in the discharge cavity. as well as An extraction mechanism is provided, which can apply an electric field to the plasma formed in the discharge cavity to extract the plasma out of the discharge cavity and form an ion beam. The multiple plasma generation mechanisms are configured to operate simultaneously to increase the intensity of the ion beam. The plasma generation mechanisms are configured such that their relative positions to each other are adjustable. The distribution mechanism includes: An inlet pipe, on which the gas inlet is provided; Multiple outlet pipes are provided, each of which has a gas outlet. The multiple outlet pipes are slidably connected to the inlet pipe, so that the relative positions of the multiple outlet pipes are adjustable.

2. The ion source according to claim 1, further comprising: A support mechanism is provided to support the plasma generation mechanism to maintain the relative positions of the gasification mechanism, the dispensing mechanism, and the plasma generation mechanism.

3. The ion source according to claim 2, wherein, The supporting structure includes: A plate body is used to connect with the plasma generating mechanism to support the plasma generating mechanism. The plasma generating mechanism and the dispensing mechanism are disposed on one side of the plate body, and the vaporization mechanism is disposed on the other side of the plate body. A through hole is provided on the plate body, the through hole allowing the gasification mechanism to pass at least partially through the plate body to connect with the dispensing mechanism.

4. The ion source according to claim 1, wherein, Each of the plasma generation mechanisms includes: A strip-shaped member, communicating with the gas outlet, wherein the wall surface opposite to the gas outlet forms a through groove; and An extraction plate is installed at the slot opening between the two slot walls of the through slot. The extraction plate covers the slot opening of the through slot to form the discharge cavity. The extraction plate is provided with an extraction slot for extracting plasma out of the discharge cavity.

5. The ion source according to claim 4, wherein, The strips of the multiple plasma generation mechanisms are arranged parallel to each other.

6. The ion source according to claim 4, wherein, The plasma generation mechanism further includes: A reflective shell is disposed on the outside of the strip, the reflective shell being used to reflect spilled ions and heat; A heating wire is fixed to the reflective shell, and the heating wire is used to heat the discharge cavity.

7. The ion source according to claim 4, wherein, The lead-out mechanism is disposed opposite to the lead-out plate and is configured such that the distance between them is adjustable.

8. The ion source according to claim 1, wherein, The electronic emission mechanism includes: Multiple cathodes corresponding to the plurality of plasma generating mechanisms, each of the cathodes being disposed on one side of the corresponding plasma generating mechanism; A plurality of filaments corresponding to the plurality of cathodes, the filaments being used to heat the cathodes to emit electrons into the discharge cavity; and A filament support structure is provided to support the filament and enable the filament to move in at least two degrees of freedom to adjust the relative position of the filament and the cathode.

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