Wafer high-temperature liquid medicine cleaning device with good temperature uniformity

Abstract

The application discloses a wafer high-temperature chemical liquid cleaning device with good temperature uniformity, which comprises a rotating table, a clamping jaw arranged on the rotating table, and a movable front nozzle arranged above the rotating table; a lower heat preservation plate is movably arranged in the rotating table below the wafer clamped by the clamping jaw, the lower heat preservation plate is provided with a liquid injection port and a liquid discharge port arranged through the center of the lower heat preservation plate; at least two back nozzles are movably arranged in the rotating table below the lower heat preservation plate; and an upper heat preservation part is movably arranged above the wafer clamped by the clamping jaw, the upper heat preservation part is provided with heat preservation liquid which flows from the periphery of the upper heat preservation part to the center of the upper heat preservation part. The upper heat preservation part, the lower heat preservation plate and the side heating element are used for heating and heat preservation of the upper and lower surfaces and the side surface of the wafer, heat loss is reduced, the temperature of the wafer and the chemical liquid on the wafer is ensured to be in the required high-temperature range, the temperature uniformity is good, and the etching rate of the wafer is improved.

Description

Technical Field

[0001] This invention belongs to the field of high-temperature chemical cleaning technology, and particularly relates to a wafer high-temperature chemical cleaning device with good temperature uniformity and its cleaning process. Background Technology

[0002] A wafer is a silicon wafer used to manufacture silicon semiconductor circuits. Its raw material is silicon. Processing the wafer with a high-temperature solution is an important step in the manufacturing process. When processing the wafer with a high-temperature solution, heat preservation measures must be used to prevent the temperature of the high-temperature solution discharged onto the wafer from dropping, so as to avoid affecting the subsequent etching effect of the wafer.

[0003] Currently, high-temperature ethanol-blended wafers are used for cleaning and etching wafers. However, in actual use, it has been found that when the high-temperature chemical solution is supplied to the wafer, the solution flows on the wafer, carrying away heat and causing the temperature of both the solution and the wafer to drop. The heat dissipation is greatest at the wafer edge, resulting in low temperatures at the wafer edge and poor temperature uniformity of the solution on the wafer. This leads to a decrease in etching rate and other properties of the chemical solution, as well as uneven etching on the wafer surface, which affects the quality of the wafer. Summary of the Invention

[0004] The purpose of this invention is to overcome the shortcomings of the prior art and provide a high-temperature cleaning device for wafers with good temperature uniformity by adding an upper heat insulation part, a lower heat insulation plate and a side heating element to ensure good temperature uniformity of the wafer and the chemical solution on the wafer, thereby improving the wafer etching efficiency.

[0005] To achieve the above objectives, the technical solution adopted by the present invention is: a wafer high-temperature chemical cleaning device with good temperature uniformity, comprising a rotating stage, wherein the rotating stage is provided with jaws for holding wafers, and a movable front nozzle is provided above the rotating stage, and further comprising:

[0006] The lower insulation plate is movable up and down and is located inside the rotary table and below the wafer held by the claws. The lower insulation plate has a liquid spraying port and a liquid drain port that is located through the center of the lower insulation plate.

[0007] At least two back nozzles are vertically movable and disposed within the rotary table and located below the lower insulation plate, wherein the back nozzles spray high-temperature liquid onto the back of the wafer held by the jaws through the spray nozzles.

[0008] The upper insulation section is vertically movable and positioned above the wafer held by the jaws. The upper insulation section contains insulation liquid that gradually flows from the outer periphery of the upper insulation section to the center of the upper insulation section.

[0009] Furthermore, side heating elements for insulating the sides of the upper insulation portion are provided around the perimeter of the upper insulation portion.

[0010] Furthermore, the upper insulation portion includes:

[0011] The insulation board has a hollow interior and has an insulation liquid inlet and an insulation liquid outlet.

[0012] A first isolation element is disposed inside the insulation board and distributed along the inner edge of the insulation board to form a first area with a first inlet, wherein a first flow area is formed between the first isolation element and the inner wall of the insulation board.

[0013] A second isolation element is disposed within the first area. The second isolation element is distributed along the perimeter of the first isolation element to form a second area with a second inlet. There is a second flow area between the second isolation element and the first isolation element.

[0014] A third isolation element is disposed in the second area. The third isolation element is distributed along the perimeter of the second isolation element to form a third flow area with a third inlet. The third isolation element and the second isolation element form a fourth flow area.

[0015] The thermal insulation liquid inlet is located in the first flow area, and the thermal insulation liquid outlet is located in the third flow area.

[0016] Furthermore, the first and second entrances are located on either side of the third entrance.

[0017] Furthermore, the insulation board is made of materials such as quartz.

[0018] Due to the application of the above technical solution, the present invention has the following advantages compared with the prior art:

[0019] 1. By using the upper insulation section, the lower insulation plate, and the side heating elements, heat loss from the top, bottom, and sides of the wafer is suppressed, ensuring the uniformity of the temperature of the wafer and the high-temperature solution on the wafer, and ensuring that the etching efficiency of the wafer remains uniform.

[0020] 2. Since the heat loss is greatest at the edge of the wafer and the temperature of the insulation liquid entering the outer periphery of the upper insulation section is the highest, the insulation liquid flowing from the outer periphery of the upper insulation section to the center of the upper insulation section is provided to further ensure the uniformity of the temperature of the wafer and the liquid on the wafer and to keep the temperature within the set high temperature range. Attached Figure Description

[0021] The technical solution of the present invention will be further described below with reference to the accompanying drawings:

[0022] Figure 1 This is a schematic diagram of a structure according to an embodiment of the present invention;

[0023] Figure 2 This is a schematic diagram of the structure of an embodiment of the present invention in use.

[0024] Figure 3 This is a front view of the upper insulation part in one embodiment of the present invention;

[0025] Figure 4 for Figure 3 Internal structure diagram;

[0026] The components include: a rotating table 1, a jaw 2, a front nozzle 3, a lower insulation plate 4, a rear nozzle 5, an upper insulation part 6, a side heating element 7, a wafer 8, a liquid spray port 40, a liquid drain port 41, an insulation plate 60, a first isolation element 61, a second isolation element 62, a third isolation element 63, an insulation liquid inlet 600, an insulation liquid outlet 601, a liquid spray outlet 602, a first inlet 610, a first flow area 612, a second inlet 620, a second flow area 622, a third inlet 630, a third flow area 631, and a fourth flow area 632. Detailed Implementation

[0027] The present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments.

[0028] See Figure 1-2 An embodiment of the present invention provides a wafer high-temperature chemical cleaning device with good temperature uniformity, comprising a rotating table 1, a plurality of jaws 2 for clamping wafers 8 on the rotating table 1, a movable front nozzle 3 above the jaws 2 for spraying high-temperature chemical cleaning onto the wafers on the jaws; a lower heat preservation plate 4 is movably disposed within the rotating table 1 and located below the wafers 8 clamped by the jaws 2, and has a spray port 40 and a drain port 41 penetrating through the center of the lower heat preservation plate 4; at least two back nozzles 5 are movably disposed within the rotating table 1 and located below the lower heat preservation plate 4.

[0029] During operation, the lower insulation plate 4 rises to the side close to the wafer, and then the back nozzle 5 sprays high-temperature liquid onto the back of the wafer 8 held by the jaws through the spray port 40. The lower insulation plate 4 is used to keep the liquid on the back of the wafer warm. The sprayed residual liquid is finally discharged from the drain port 41. In this embodiment, the lower insulation plate 4 has a self-heating heater inside, which can suppress heat dissipation at the bottom of the wafer, so that the wafer and the high-temperature liquid on the wafer are within the required temperature range.

[0030] To further ensure that the temperature of the high-temperature liquid sprayed from the front nozzle is within a high range, an upper heat preservation part 6 that can be raised and lowered is added above the wafer 8. The upper heat preservation part 6 uses a high-temperature heat preservation liquid inside to suppress heat dissipation above the wafer. The heat preservation liquid is composed of high-temperature liquids such as phosphoric acid.

[0031] Meanwhile, since heat loss is most severe at the edge of the wafer, a heat-insulating liquid is provided in the upper heat-insulating part 6, which gradually flows from the outer periphery of the upper heat-insulating part 6 to the center of the upper heat-insulating part 6. In this way, the heat-insulating liquid with a higher temperature first flows to the outer periphery of the upper heat-insulating plate and then flows to the center of the upper heat-insulating part 6, thereby ensuring that the high-temperature liquid can maintain the temperature uniformity on the wafer.

[0032] For details, please refer to Figure 3-4 In this embodiment, the upper insulation part 6 includes an insulation plate 60 and a first isolation member 61, a second isolation member 62 and a third isolation member 63 disposed within the insulation plate 60. In this embodiment, the insulation plate 60, the first isolation member 61, the second isolation member 62 and the third isolation member 63 are all circular, but they can also be other shapes. In this embodiment, they are all illustrated by being circular.

[0033] The interior of the insulation board 60 is hollow, so that the insulation liquid can flow inside the insulation board 60. The first isolation member 61 is disposed inside the insulation board 60 and is distributed along the circumferential edge inside the insulation board 60 to form a first region with a first inlet 610. In this embodiment, the first region is circular. At the same time, there is a first flow region 612 between the first isolation member 61 and the inner wall of the insulation board 60 for the flow of the insulation liquid.

[0034] The second isolation member 62 is disposed in the first area, and the second isolation member is distributed along the circumferential direction of the first isolation member to form a second area with a second inlet 620. In this embodiment, the second area is also circular, and there is a second flow area 622 for the flow of heat preservation liquid between the second isolation member 62 and the first isolation member 61.

[0035] The third isolation member 63 is disposed in the second region. After the third isolation member 63 is distributed along the circumferential direction of the second isolation member, it forms a third flow region 631 with a third inlet 630. In this embodiment, the first inlet 610 and the second inlet 620 are located on both sides of the third inlet 630. At the same time, the third isolation member 62 and the second isolation member 61 form a fourth flow region 632 for the flow of heat preservation liquid.

[0036] In addition, the heat preservation liquid inlet 600 is located in the first flow area, the heat preservation liquid outlet 601 is located in the third flow area, and the medicine spray outlet 602 is located in the third flow area 631.

[0037] The flow pattern of the thermal insulation liquid within the thermal insulation board 60 is as follows:

[0038] The thermal insulation liquid flows into the first flow region 612 through the thermal insulation liquid inlet 600. The first flow region 612 is located at the outermost edge of the thermal insulation plate 60. Then, the thermal insulation liquid flows along both sides of the first isolation member 61 through the first inlet 610 to the second flow region 622, then along both sides of the second isolation member 62 through the second inlet 620 to the fourth flow region 632, and finally along both sides of the third isolation member 63 through the third inlet 630 to the third flow region 631. This process realizes the delivery of the thermal insulation liquid from the outer edge of the thermal insulation plate 60 to the center of the thermal insulation plate 60. Since the thermal insulation liquid itself has a high temperature, the outer edge of the wafer can maintain a high temperature, avoiding excessive heat dissipation at the wafer edge and resulting in a low temperature. This ensures the uniformity of the temperature of the high-temperature liquid and the temperature of the wafer, and the etching rate on the wafer surface can be uniformly processed.

[0039] As a further preferred embodiment of this application, the insulation board 60 is made of quartz or the like, which has good insulation properties.

[0040] As a further preferred embodiment of this application, a side heating element is provided around the upper insulation portion 6 to keep the side of the upper insulation portion warm, thereby further suppressing heat dissipation from the wafer side and ensuring that the temperature of the liquid on the wafer and the temperature of the wafer do not drop.

[0041] In addition, the heat-insulating liquid in this embodiment is a high-temperature chemical solution such as phosphoric acid, but other solutions can also be used.

[0042] In summary, the high-temperature wafer cleaning device of the present invention, which has good temperature uniformity, utilizes an upper insulation section, a lower insulation plate, and side heating elements to heat and insulate the upper, lower, and side surfaces of the wafer, reducing heat loss and keeping the temperature of the wafer and the cleaning solution on the wafer within a high temperature range. This ensures good temperature uniformity of the cleaning solution on the wafer, guarantees uniform processing of etching rates and other parameters on the wafer surface, and improves wafer quality.

[0043] The above are merely specific application examples of the present invention and do not constitute any limitation on the scope of protection of the present invention. All technical solutions formed by equivalent transformations or substitutions fall within the scope of protection of the present invention.

Claims

1. A wafer high-temperature chemical cleaning apparatus with good temperature uniformity, comprising a rotating stage, wherein the rotating stage is provided with jaws for holding wafers, and a movable front nozzle is provided above the rotating stage, characterized in that, Also includes: The lower insulation plate is movable up and down and is located inside the rotary table and below the wafer held by the claws. The lower insulation plate has a liquid spraying port and a liquid drain port that is located through the center of the lower insulation plate. At least two back nozzles are vertically movable and disposed within the rotary table and located below the lower insulation plate, wherein the back nozzles spray high-temperature liquid onto the back of the wafer held by the jaws through the spray nozzles. An upper insulation section is vertically movable and positioned above the wafer held by the jaws. The upper insulation section contains an insulation liquid that gradually flows from its outer periphery to its center. The upper insulation section includes: The insulation board has a hollow interior and has an insulation liquid inlet and an insulation liquid outlet. A first isolation element is disposed inside the insulation board and distributed along the inner edge of the insulation board to form a first area with a first inlet, wherein a first flow area is formed between the first isolation element and the inner wall of the insulation board. A second isolation element is disposed within the first area. The second isolation element is distributed along the perimeter of the first isolation element to form a second area with a second inlet. There is a second flow area between the second isolation element and the first isolation element. A third isolation element is disposed in the second area. The third isolation element is distributed along the perimeter of the second isolation element to form a third flow area with a third inlet. The third isolation element and the second isolation element form a fourth flow area. The thermal insulation liquid inlet is located in the first flow area, and the thermal insulation liquid outlet is located in the third flow area.

2. The wafer high-temperature chemical cleaning device with good temperature uniformity as described in claim 1, characterized in that: Side heating elements for insulating the sides of the upper insulation part are provided around the perimeter of the upper insulation part.

3. The wafer high-temperature chemical cleaning device with good temperature uniformity as described in claim 1, characterized in that: The first and second entrances are located on either side of the third entrance.

4. The wafer high-temperature chemical cleaning device with good temperature uniformity as described in claim 1, characterized in that: The insulation board is made of quartz.

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