High-brightness micro-led array chip, preparation method and display device

Abstract

The application relates to the chip preparation field and discloses a high-brightness Micro-LED array chip, a preparation method and a display device, wherein the chip comprises a transfer substrate, a lens layer, a first conductive layer, a second conductive layer, a first insulating layer, a third conductive layer and an epitaxial layer which are sequentially stacked on the transfer substrate from bottom to top, and a COMS substrate; the first conductive layer, the second conductive layer, the first insulating layer and the third conductive layer are provided with first through holes and filled with a first conductive layer material in the holes; the epitaxial layer comprises a plurality of LED pixel units, a first N electrode and a first P electrode; two adjacent LED pixel units are provided with a second through hole, and the hole is filled with an insulating reflective material; the CMOS substrate comprises a second N electrode and a second P electrode; the second N electrode is connected with the first N electrode in correspondence, and the second P electrode is connected with the first P electrode in correspondence. The chip provided by the application greatly increases the light extraction efficiency of the LED pixel unit.

Description

Technical Field

[0001] The present invention relates to the field of chip preparation and provides a high-brightness Micro-LED array chip, a preparation method and a display device. Background Art

[0002] Current Micro-LED array chips or AR display chips generally use laser stripping sapphire technology to achieve modular GaN materials, and then use semiconductor graphic etching technology to achieve pixel size isolation and segmentation to achieve pixel miniaturization of micro-display products.

[0003] However, due to the small size of Micro-LED array chips, the current mainstream technology route does not optimize the structure of the pixel part to improve the brightness. Summary of the Invention

[0004] The present invention provides a high-brightness Micro-LED array chip, a preparation method, and a display device, which are used to solve the problem mentioned in the background technology that "the current mainstream technology route does not enhance the brightness of the pixel part."

[0005] According to a first aspect of the present invention, a high-brightness Micro-LED array chip is provided, comprising:

[0006] A transfer substrate, and a lens layer, a first conductive layer, a second conductive layer, a first insulating layer, a third conductive layer, and an epitaxial layer stacked sequentially from bottom to top on the transfer substrate;

[0007] and COMS substrates;

[0008] wherein the first conductive layer, the second conductive layer, the first insulating layer and the third conductive layer have first through holes, and the first through holes penetrate the third conductive layer, the first insulating layer, the second conductive layer and the first conductive layer, and the first through holes are filled with the first conductive layer material;

[0009] The epitaxial layer includes: a plurality of LED pixel units, a first N electrode and a first P electrode;

[0010] Each LED pixel unit includes a P-type epitaxial layer, a light-emitting layer, and an N-type epitaxial layer stacked in sequence from bottom to top on the transfer substrate; a second through hole is provided between two adjacent LED pixel units, the second through hole penetrates the P-type epitaxial layer, the light-emitting layer, and the N-type epitaxial layer, and the second through hole is filled with an insulating reflective material; the first N-electrode is located on the LED pixel unit on one side of the P-type epitaxial layer; the first P-electrode is located at the edge of the epitaxial layer;

[0011] The CMOS substrate includes: a second N electrode and a second P electrode;

[0012] The second N-electrode is connected to the first N-electrode correspondingly, and the second P-electrode is connected to the first P-electrode correspondingly.

[0013] Optionally, the first conductive layer and the third conductive layer are transparent conductive layers, and the third conductive layer is a transparent conductive film; and the second conductive layer is a metal conductive layer.

[0014] Optionally, the thickness of the first conductive layer and the third conductive layer ranges from 100 nanometers to 500 nanometers.

[0015] Optionally, the material of the transparent conductive layer is: a metal film material, an oxide film material, or a polymer film material.

[0016] Optionally, the material of the metal conductive layer is: metal element material, alloy material or composite metal material.

[0017] Optionally, the lens layer includes: a plurality of lens structures.

[0018] Optionally, the lens structure is a convex lens.

[0019] Optionally, the first through hole is cylindrical in shape.

[0020] Optionally, the shape of the LED pixel unit includes: a first shape and a second shape;

[0021] The first shape is a truncated cone, wherein a side close to the third conductive layer is an upper bottom surface, and a side away from the third conductive layer is a lower bottom surface, and an area of ​​the upper bottom surface is larger than an area of ​​the lower bottom surface; an angle formed by a busbar of the truncated cone and the third conductive layer is greater than 45 degrees and less than 85 degrees;

[0022] The second shape is a hemisphere, and the plane of the hemisphere is connected to the upper ground;

[0023] Wherein, the light-emitting layer and the P-type epitaxial layer are in the shape of a truncated cone;

[0024] The N-type epitaxial layer is in the hemispherical shape.

[0025] According to a second aspect of the present invention, a method for preparing a high-brightness Micro-LED array chip is provided, for preparing the chip structure according to the first aspect of the present invention, the method comprising the following steps:

[0026] S1: Providing an epitaxial wafer; the epitaxial wafer includes a P-type epitaxial layer, a light-emitting layer, and an N-type epitaxial layer formed in sequence from bottom to top; etching the epitaxial layer to form a second through hole on the epitaxial layer that penetrates the N-type epitaxial layer, the light-emitting layer, and the P-type epitaxial layer;

[0027] S2: covering the second through hole and the epitaxial layer with a third conductive layer; and forming a first insulating layer on the third conductive layer;

[0028] S3: etching the first insulating layer to form a first through hole penetrating the first insulating layer; wherein positions of the first through hole and the second through hole are staggered;

[0029] S4: depositing a second conductive layer, the second conductive layer filling the first through hole and covering the first insulating layer; etching the second conductive layer in the first through hole to remove the second conductive layer in the first through hole, and continuing etching until the first through hole penetrates the third conductive layer and stays on the epitaxial layer;

[0030] S5: depositing a first conductive layer, wherein the first conductive layer fills the first through hole and covers the second conductive layer;

[0031] S6: covering the first conductive layer with a lens layer;

[0032] S7: etching the lens layer to form a plurality of lens structures, wherein positions of the plurality of lens structures are consistent with positions of the first through holes;

[0033] S8: bonding the lens structure to a transfer substrate;

[0034] S9: forming a pixel point in an area of ​​the epitaxial layer not filled with the insulating material, wherein the position of the pixel point is consistent with the position of the first through hole;

[0035] S10: removing the epitaxial layer not filled with the insulating material and not the pixel points, and filling the area where the epitaxial layer is removed with an insulating reflective material;

[0036] S11: forming a first N electrode on the pixel and forming a first P electrode around the insulating reflective material;

[0037] S12: Bonding the first N electrode and the first P electrode to a second N electrode and a second P electrode on a CMOS substrate respectively to form the high-brightness Micro-LED array chip.

[0038] Optionally, in step S6, the material of the lens layer is silicon oxide.

[0039] Optionally, step S8 specifically includes: applying adhesive on the transfer substrate to adhere the lens structure to the transfer substrate.

[0040] Optionally, the adhesive is a transparent adhesive.

[0041] Optionally, in step S12, the bonding is achieved by at least one of the following methods: high temperature bonding, high pressure bonding, and vacuum bonding.

[0042] According to a third aspect of the present invention, a Micro-LED display device is provided, comprising the high-brightness Micro-LED array chip according to the first aspect of the present invention.

[0043] In the high-brightness Micro-LED array chip, preparation method, and display device provided by the present invention, the lens layer disposed on the first conductive layer significantly increases the light extraction efficiency of the LED pixel unit. Furthermore, the design of the first and second through-holes shortens the chemical entry path during chemical wet stripping, achieving simultaneous and uniform stripping of the chip. This ultimately improves chip yield and reduces the cost of display chip manufacturing.

[0044] In a further preferred embodiment, a lens layer formed by a plurality of convex lenses is adopted to further increase the light extraction efficiency of the LED pixel unit. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0046] Figure 1 2 is a schematic structural diagram of a high-brightness Micro-LED array chip according to an embodiment of the present invention;

[0047] Figure 2 1 is a flow chart of a method for preparing a high-brightness Micro-LED array chip according to an embodiment of the present invention;

[0048] Description of the accompanying drawings:

[0049] 100-transfer substrate;

[0050] 200- lens layer;

[0051] 300-first conductive layer;

[0052] 400- second conductive layer;

[0053] 500-first insulating layer;

[0054] 600-third conductive layer;

[0055] 601-first through hole;

[0056] 700-epitaxial layer;

[0057] 701-LED pixel unit;

[0058] 7011-P type epitaxial layer;

[0059] 7012-luminescent layer;

[0060] 7013-N type epitaxial layer;

[0061] 702 - first N electrode;

[0062] 703-first P electrode;

[0063] 704-second through hole;

[0064] 800-CMOS substrate;

[0065] 801- second N electrode;

[0066] 802-second P electrode. DETAILED DESCRIPTION

[0067] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0068] The terms "first," "second," "third," "fourth," and the like (if any) in the description and claims of the present invention and in the accompanying drawings are used to distinguish similar objects and are not necessarily used to describe a particular order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate so that the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. In addition, the terms "including" and "having," as well as any variations thereof, are intended to cover non-exclusive inclusions, e.g., a process, method, system, product, or apparatus comprising a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units that are not explicitly listed or that are inherent to these processes, methods, products, or apparatus.

[0069] The following specific embodiments are used to describe the technical solution of the present invention in detail. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described in detail in some embodiments.

[0070] In semiconductor device manufacturing, etching is a technique that selectively removes material from a thin film on a substrate (with or without pre-existing structures on its surface), forming a pattern of that material on the substrate. However, existing technologies lack a structure that can improve the brightness of array chips.

[0071] For this, please refer to Figure 1 The structure of the high-brightness Micro-LED array chip provided in one embodiment of the present invention includes: a transfer substrate 100, and a lens layer 200, a first conductive layer 300, a second conductive layer 400, a first insulating layer 500, a third conductive layer 600 and an epitaxial layer 700 stacked in sequence from bottom to top on the transfer substrate.

[0072] The transfer substrate 100 may be a transparent substrate, such as a peeling substrate or a double-sided polished sapphire substrate. In a preferred embodiment, the refractive index of the glass substrate is 1.46.

[0073] Among them, there is a first through hole 601 on the first conductive layer 300, the second conductive layer 400, the first insulating layer 500 and the third conductive layer 600, and the first through hole 601 passes through the third conductive layer 600, the first insulating layer 500, the second conductive layer 400 and the first conductive layer 300, and the first through hole 601 is filled with the first conductive layer material.

[0074] The first through hole in the embodiment of the present invention is cylindrical in shape.

[0075] In a specific embodiment of the present invention, the first conductive layer and the third conductive layer are transparent conductive layers, and the third conductive layer is a transparent conductive film. The second conductive layer is a metal conductive layer. The transparent conductive layer is made of a metal film material, an oxide film material, or a polymer film material, such as ITO (tin-doped indium trioxide) or AZO (aluminum-doped zinc oxide). The metal conductive layer is made of a metal element material, an alloy material, or a composite metal material, such as Ag or Al.

[0076] The thickness of the first conductive layer and the third conductive layer in the embodiment of the present invention ranges from 100 nanometers to 500 nanometers.

[0077] Please continue to refer to Figure 1 The epitaxial layer 700 in the embodiment of the present invention includes: a plurality of LED pixel units 701 , a first N-electrode 702 and a first P-electrode 703 .

[0078] In which, each LED pixel unit 701 includes a P-type epitaxial layer 7011, a light-emitting layer 7012 and an N-type epitaxial layer 7013 stacked in sequence from bottom to top on the transfer substrate; in which, there is a second through hole 704 between two adjacent LED pixel units, and the second through hole 704 passes through the P-type epitaxial layer 7011, the light-emitting layer 7012 and the N-type epitaxial layer 7013, and the second through hole 704 is filled with insulating reflective material; the first N electrode 702 is located on the LED pixel unit on one side of the P-type epitaxial layer 7011; the first P electrode 703 is located at the edge of the epitaxial layer 700.

[0079] Among them, the P-type epitaxial layer 7011 can be, for example, P-GaN doped with Mg as an acceptor element during growth; the light-emitting layer 7012 can be, for example, an MQW (quantum well) with an overlapping multi-layer quantum well structure; the N-type epitaxial layer 7013 can be, for example, N-GaN doped with Si as an acceptor element during growth.

[0080] In the embodiment of the present invention, the shapes of the LED pixel unit 701 include: a first shape and a second shape; the first shape is a truncated cone, and the side close to the third conductive layer is the upper bottom surface, and the side away from the third conductive layer is the lower bottom surface, and the area of ​​the upper bottom surface is larger than the area of ​​the lower bottom surface; the angle formed by the busbar of the truncated cone and the third conductive layer is greater than 45 degrees and less than 85 degrees; the second shape is a hemispherical shape, and the plane of the hemisphere is connected to the upper ground.

[0081] The light-emitting layer 7012 and the P-type epitaxial layer 7013 are truncated cone-shaped, while the N-type epitaxial layer 7011 is hemispherical. The hemispherical P-type epitaxial layer achieves a better light-collecting effect when absorbing light, thereby improving the light extraction efficiency of the LED pixel unit. The truncated cone-shaped N-type epitaxial layer and light-emitting layer prevent optical crosstalk between different pixels, thereby improving the light contrast of the LED pixel unit.

[0082] Please continue to refer to Figure 1 The structure of the high-brightness Micro-LED array chip provided in the embodiment of the present invention further includes: a CMOS substrate 800. The CMOS substrate 800 includes: a second N-electrode 801 and a second P-electrode 802.

[0083] The second N-electrode 801 is connected to the first N-electrode 702 , and the second P-electrode 802 is connected to the first P-electrode 703 .

[0084] The lens layer in the embodiment of the present invention includes: a plurality of lens structures. The lens structures are convex lenses. The convex lens structures can achieve a better light focusing effect and improve the light extraction efficiency of the LED pixel unit.

[0085] In a preferred embodiment, the lens structure may also be frosted glass with an uneven surface.

[0086] In the high-brightness Micro-LED array chip provided by the present invention, a lens layer disposed on the first conductive layer greatly increases the light extraction efficiency of the LED pixel unit. Furthermore, the design of the first and second through-holes shortens the chemical entry path during chemical wet stripping, enabling simultaneous and uniform stripping of the chip, ultimately improving chip yield and reducing the cost of display chip manufacturing. In a further preferred embodiment, the light extraction efficiency of the LED pixel unit is further increased by employing a lens layer formed by multiple convex lenses.

[0087] Please refer to Figure 2 In one embodiment of the present invention, a method for preparing a high-brightness Micro-LED array chip is provided for preparing the chip structure described above. The method comprises the following steps:

[0088] S1: Provide an epitaxial wafer; the epitaxial wafer includes a P-type epitaxial layer, a light-emitting layer and an N-type epitaxial layer formed in sequence from bottom to top; etch the epitaxial layer to form a second through hole on the epitaxial layer that penetrates the N-type epitaxial layer, the light-emitting layer and the P-type epitaxial layer.

[0089] In an embodiment of the present invention, the epitaxial wafer is placed on a DPSS substrate for etching.

[0090] As a specific embodiment, a DPSS substrate is attached to an N-type epitaxial layer, and etching is performed from the P-type epitaxial layer toward the N-type epitaxial layer using photolithography. It should be understood that the present invention is not limited to this etching technique, and second through-holes etched using other etching techniques, such as ICP etching, are also within the scope of protection of the present invention.

[0091] S2: covering the second through hole and the epitaxial layer with a third conductive layer; and forming a first insulating layer on the third conductive layer.

[0092] S3: Etching the first insulating layer to form a first through hole penetrating the first insulating layer; wherein positions of the first through hole and the second through hole are staggered with each other.

[0093] S4: depositing a second conductive layer, which fills the first through hole and covers the first insulating layer; etching the second conductive layer in the first through hole to remove the second conductive layer in the first through hole, and continuing to etch until the first through hole penetrates the third conductive layer and stays on the epitaxial layer.

[0094] S5: depositing a first conductive layer, where the first conductive layer fills the first through hole and covers the second conductive layer.

[0095] S6: Covering the first conductive layer with a lens layer.

[0096] In a specific embodiment of the present invention, the lens layer is made of silicon oxide.

[0097] S7: etching the lens layer to form a plurality of lens structures, wherein positions of the plurality of lens structures are consistent with positions of the first through holes.

[0098] In a specific embodiment of the present invention, the lens layer is etched to form a plurality of lens structures thereon, wherein one side of each lens structure is flush with the first conductive layer, and the other side of each lens structure is a smooth arc shape. Of course, the shape of the lens structure of the present invention is not limited to the arc shape described above; that is, the other side of the lens structure can also be etched to have an uneven surface, such as the surface of frosted glass.

[0099] S8: Bonding the lens structure to a transfer substrate.

[0100] In a specific embodiment of the present invention, adhesive is applied on the transfer substrate to adhere the lens structure to the transfer substrate.

[0101] The adhesive in the specific embodiment of the present invention is a transparent adhesive. Of course, it can be understood that the present invention is not limited to the type of glue, and other transparent materials with adhesive functions are within the protection scope of the present invention.

[0102] In a specific embodiment of the present invention, the semi-finished product with a plurality of lens structures bonded thereto is bonded to a transfer substrate, and then the DPSS substrate is removed.

[0103] S9: preparing pixel points in the area of ​​the epitaxial layer not filled with the insulating material, where the positions of the pixel points are consistent with the positions of the first through holes.

[0104] S10: removing the epitaxial layer not filled with the insulating material and not the pixel points, and filling the area where the epitaxial layer is removed with an insulating reflective material.

[0105] S11: preparing a first N electrode on the pixel point and preparing a first P electrode around the insulating reflective material.

[0106] S12: Bonding the first N electrode and the first P electrode to a second N electrode and a second P electrode on a CMOS substrate respectively to form the high-brightness Micro-LED array chip.

[0107] In a specific embodiment, the bonding method includes at least one of the following: high temperature bonding, high pressure bonding, and vacuum bonding. Of course, it is understood that the electrode bonding methods are not limited to the above-listed methods, and other electrode bonding methods are also within the scope of protection of the present invention.

[0108] In addition, the present invention also provides a Micro-LED display device, including the above-mentioned high-brightness Micro-LED array chip.

[0109] Throughout this specification, references to terms such as "one embodiment," "an example," "a specific implementation," or "an example" indicate that the specific features, structures, materials, or characteristics described in conjunction with that embodiment or example are included in at least one embodiment or example of the present invention. In this specification, schematic representations of these terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0110] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or make equivalent replacements for some or all of the technical features therein. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A high-brightness Micro-LED array chip, characterized in that: include: A transfer substrate, and a lens layer, a first conductive layer, a second conductive layer, a first insulating layer, a third conductive layer, and an epitaxial layer stacked sequentially from bottom to top on the transfer substrate; and COMS substrates; wherein the first conductive layer, the second conductive layer, the first insulating layer and the third conductive layer have first through holes, and the first through holes penetrate the third conductive layer, the first insulating layer, the second conductive layer and the first conductive layer, and the first through holes are filled with the first conductive layer material; The epitaxial layer includes: a plurality of LED pixel units, a first N electrode and a first P electrode; Each LED pixel unit includes a P-type epitaxial layer, a light-emitting layer, and an N-type epitaxial layer stacked in sequence from bottom to top on the transfer substrate; a second through hole is provided between two adjacent LED pixel units, the second through hole penetrates the P-type epitaxial layer, the light-emitting layer, and the N-type epitaxial layer, and the second through hole is filled with an insulating reflective material; the first N-electrode is located on the LED pixel unit on one side of the P-type epitaxial layer; the first P-electrode is located at the edge of the epitaxial layer; The CMOS substrate includes: a second N electrode and a second P electrode; The second N-electrode is connected to the first N-electrode correspondingly, and the second P-electrode is connected to the first P-electrode correspondingly.

2. The high-brightness Micro-LED array chip according to claim 1, characterized in that: The first conductive layer and the third conductive layer are transparent conductive layers, and the third conductive layer is a transparent conductive film; The second conductive layer is a metal conductive layer.

3. The high-brightness Micro-LED array chip according to claim 2, characterized in that: The thickness of the first conductive layer and the third conductive layer ranges from 100 nanometers to 500 nanometers.

4. The high-brightness Micro-LED array chip according to claim 3, characterized in that: The material of the transparent conductive layer is: metal film material, oxide film material or polymer film material.

5. The high-brightness Micro-LED array chip according to claim 3, characterized in that: The material of the metal conductive layer is: metal element material, alloy material or composite metal material.

6. The high-brightness Micro-LED array chip according to claim 1, characterized in that: The lens layer includes: a plurality of lens structures.

7. The high-brightness Micro-LED array chip according to claim 6, characterized in that: The lens structure is a convex lens.

8. The high-brightness Micro-LED array chip according to claim 1, wherein: The first through hole is cylindrical in shape.

9. The high-brightness Micro-LED array chip according to claim 1, wherein: The shapes of the LED pixel units include: a first shape and a second shape; The first shape is a truncated cone, wherein a side close to the third conductive layer is an upper bottom surface, and a side away from the third conductive layer is a lower bottom surface, and an area of ​​the upper bottom surface is larger than an area of ​​the lower bottom surface; an angle formed by a busbar of the truncated cone and the third conductive layer is greater than 45 degrees and less than 85 degrees; The second shape is a hemisphere, and the plane of the hemisphere is connected to the upper ground; Wherein, the light-emitting layer and the P-type epitaxial layer are in the shape of a truncated cone; The N-type epitaxial layer is in the hemispherical shape.

10. A method for preparing a high-brightness Micro-LED array chip, for preparing the chip structure according to any one of claims 1 to 9, characterized in that: The method comprises the following steps: S1: Providing an epitaxial wafer; the epitaxial wafer includes a P-type epitaxial layer, a light-emitting layer, and an N-type epitaxial layer formed in sequence from bottom to top; etching the epitaxial layer to form a second through hole on the epitaxial layer that penetrates the N-type epitaxial layer, the light-emitting layer, and the P-type epitaxial layer; S2: covering the second through hole and the epitaxial layer with a third conductive layer; and forming a first insulating layer on the third conductive layer; S3: etching the first insulating layer to form a first through hole penetrating the first insulating layer; wherein positions of the first through hole and the second through hole are staggered; S4: depositing a second conductive layer, the second conductive layer filling the first through hole and covering the first insulating layer; etching the second conductive layer in the first through hole to remove the second conductive layer in the first through hole, and continuing etching until the first through hole penetrates the third conductive layer and stays on the epitaxial layer; S5: depositing a first conductive layer, wherein the first conductive layer fills the first through hole and covers the second conductive layer; S6: covering the first conductive layer with a lens layer; S7: etching the lens layer to form a plurality of lens structures, wherein positions of the plurality of lens structures are consistent with positions of the first through holes; S8: bonding the lens structure to a transfer substrate; S9: forming a pixel point in an area of ​​the epitaxial layer not filled with the insulating material, wherein the position of the pixel point is consistent with the position of the first through hole; S10: removing the epitaxial layer not filled with the insulating material and not the pixel points, and filling the area where the epitaxial layer is removed with an insulating reflective material; S11: forming a first N electrode on the pixel and forming a first P electrode around the insulating reflective material; S12: Bonding the first N electrode and the first P electrode to a second N electrode and a second P electrode on a CMOS substrate respectively to form the high-brightness Micro-LED array chip.

11. The method for preparing a high-brightness Micro-LED array chip according to claim 10, wherein: In step S6, the material of the lens layer is silicon oxide.

12. The method for preparing a high-brightness Micro-LED array chip according to claim 10, wherein: In step S8, it specifically includes: applying adhesive on the transfer substrate to adhere the lens structure to the transfer substrate.

13. The method for preparing a high-brightness Micro-LED array chip according to claim 12, wherein: The adhesive is a transparent adhesive.

14. The method for preparing a high-brightness Micro-LED array chip according to claim 10, wherein: In step S12, the bonding is achieved by at least one of the following methods: high temperature bonding, high pressure bonding, and vacuum bonding.

15. A Micro-LED display device, characterized in that: A high-brightness Micro-LED array chip comprising the high-brightness Micro-LED array chip according to any one of claims 1 to 9.

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